Semiconductor Group 1 Nov-26-1996

BCR 166
PNP Silicon Digital Transistor
Switching circuit, inverter, interface circuit,
driver circuit
Built in bias resistor (R
1
=4.7k, R
2
=47k)
Type Marking Ordering Code Pin Configuration Package
BCR 166 WTs Q62702-C2339 1=B 2=E 3=C SOT-23
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage V
CEO
50 V
Collector-base voltage V
CBO
50
Emitter-base voltage V
EBO
5
Input on Voltage V
i(on)
15
DC collector current I
C
100 mA
Total power dissipation, T
S
= 102C P
tot
200 mW
Junction temperature T
j
150 C
Storage temperature T
stg
- 65 ... + 150
Thermal Resistance
Junction ambient
1)
R
thJA
350 K/W
Junction - soldering point R
thJS
240
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm
2
Cu
Semiconductor Group 2 Nov-26-1996
BCR 166
Electrical Characteristics at T
A
=25C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 100 A, I
B
= 0
V
(BR)CEO
50 - -
V
Collector-base breakdown voltage
I
C
= 10 A, I
B
= 0
V
(BR)CBO
50 - -
Collector cutoff current
V
CB
= 40 V, I
E
= 0
I
CBO
- - 100
nA
Emitter cutoff current
V
EB
= 5 V, I
C
= 0
I
EBO
- - 155
A
DC current gain
I
C
= 5 mA, V
CE
= 5 V
h
FE
70 - -
-
Collector-emitter saturation voltage 1)
I
C
= 10 mA, I
B
= 0.5 mA
V
CEsat
- - 0.3
V
Input off voltage
I
C
= 100 A, V
CE
= 5 V
V
i(off)
0.4 - 0.8
Input on Voltage
I
C
= 2 mA, V
CE
= 0.3 V
V
i(on)
0.5 - 1.4
Input resistor R
1
3.2 4.7 6.2 k
Resistor ratio R
1
/R
2
0.09 0.1 0.11 -
AC Characteristics
Transition frequency
I
C
= 10 mA, V
CE
= 5 V, f = 100 MHz
f
T
- 160 -
MHz
Collector-base capacitance
V
CB
= 10 V, f = 1 MHz
C
cb
- 3 -
pF
1) Pulse test: t < 300s; D < 2%
Semiconductor Group 3 Nov-26-1996
BCR 166
DC Current Gain h
FE
= f (I
C
)
V
CE
= 5V (common emitter configuration)

10
-1
10
0
10
1
mA
I
C
0
10
1
10
2
10
3
10
-
h
FE
Collector-Emitter Saturation Voltage
V
CEsat
= f(I
C
), h
FE
= 20

0.0 0.2 0.4 0.6 V 1.0
V
CEsat
0
10
1
10
2
10
mA
I
C
Input on Voltage V
i(on)
= f(I
C
)
V
CE
= 0.3V (common emitter configuration)

10
-1
10
0
10
1
V
V
i(on)
-1
10
0
10
1
10
2
10
mA
I
C
Input off voltage V
i(off)
= f(I
C
)
V
CE
= 5V (common emitter configuration)

0.0 0.2 0.4 0.6 V 1.0
V
i(off)
-3
10
-2
10
-1
10
0
10
1
10
mA
I
C
Semiconductor Group 4 Nov-26-1996
BCR 166
Total power dissipation P
tot
= f (T
A
*;T
S
)
* Package mounted on epoxy

0 20 40 60 80 100 120 C 150
T
A
,T
S
0
50
100
150
200
mW
300
P
tot
T
S
T
A
Permissible Pulse Load R
thJS
= f(t
p
)

10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p

-1
10
0
10
1
10
2
10
3
10
K/W
R
thJS

D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load P
totmax
/ P
totDC
= f(t
p
)

10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p

0
10
1
10
2
10
3
10
-
P
totmax
/P
totDC

D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5