Order this document

by MTP75N03HDL/D

SEMICONDUCTOR TECHNICAL DATA

 
 



  

  


Motorola Preferred Device

NChannel EnhancementMode Silicon Gate

TMOS POWER FET

LOGIC LEVEL
75 AMPERES
RDS(on) = 9.0 mOHM
25 VOLTS

This advanced highcell density HDTMOS EFET is designed to

withstand high energy in the avalanche and commutation modes.
This new energy efficient design also offers a draintosource
diode with a fast recovery time. Designed for lowvoltage,
highspeed switching applications in power supplies, converters
and PWM motor controls, and inductive loads. The avalanche
energy capability is specified to eliminate the guesswork in designs
where inductive loads are switched, and to offer additional safety
margin against unexpected voltage transients.

Ultra Low RDS(on), HighCell Density, HDTMOS

SPICE Parameters Available
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Avalanche Energy Specified

G
CASE 221A06, Style 5
TO220AB

MAXIMUM RATINGS (TC = 25C unless otherwise noted)

Symbol

Value

Unit

DrainSource Voltage

Rating

VDSS

25

Vdc

DrainGate Voltage (RGS = 1.0 M)

VDGR

25

Vdc

GateSource Voltage Continuous

GateSource Voltage Single Pulse (tp 10 ms)

VGS

15
20

Vdc
Vpk

Drain Current Continuous

Continuous @ 100C
Single Pulse (tp 10 s)

ID
ID
IDM

75
59
225

Adc

Total Power Dissipation

Derate above 25C

PD

150
1.0

Watts
W/C

TJ, Tstg

55 to 175

Single Pulse DraintoSource Avalanche Energy Starting TJ = 25C

(VDD = 25 Vdc, VGS = 5.0 Vdc, IL = 75 Apk, L = 0.1 mH, RG = 25 )

EAS

280

mJ

Thermal Resistance Junction to Case

Junction to Ambient

RJC
RJA

1.0
62.5

C/W

TL

260

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds

Apk

This document contains information on a new product. Specifications and information herein are subject to change without notice.

EFET and HDTMOS are trademarks of Motorola, Inc.

TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

TMOS
Motorola
Motorola, Inc.
1995 Power MOSFET Transistor Device Data

MTP75N03HDL
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Characteristic

Symbol

Min

Typ

Max

25

Unit

OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(Cpk 2.0) (3)
(VGS = 0 Vdc, ID = 0.25 mA)
Temperature Coefficient (Positive)

V(BR)DSS

Vdc
mV/C

Zero Gate Voltage Drain Current

(VDS = 25 Vdc, VGS = 0 Vdc)
(VDS = 25 Vdc, VGS = 0 Vdc, TJ = 125C)

IDSS

GateBody Leakage Current (VGS = 20 Vdc, VDS = 0 V)

IGSS

Adc

100
500

100

1.0

1.5

2.0

nAdc

ON CHARACTERISTICS (1)
Gate Threshold Voltage
(Cpk 3.0) (3)
(VDS = VGS, ID = 0.25 mA)
Temperature Coefficient (Negative)

VGS(th)

Static DrainSource OnResistance

(Cpk 2.0) (3)
(VGS = 5.0 Vdc, ID = 37.5 Adc)

RDS(on)

DrainSource OnVoltage (VGS = 10 Vdc)

(ID = 75 Adc)
(ID = 37.5 Adc, TJ = 125C)

VDS(on)

Vdc
mV/C
m

Forward Transconductance (VDS = 3.0 Vdc, ID = 20 Adc)

6.0

9.0

0.68
0.6

gFS

15

55

mhos

Ciss

4025

5635

pF

Coss

1353

1894

Crss

307

430

td(on)

24

48

tr

493

986

td(off)

60

120

tf

149

300

QT

61

122

Q1

14

28

Q2

33

66

Q3

27

54

0.97
0.87

1.1

trr

58

ta

27

tb

30

QRR

0.088

Vdc

DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS (2)
TurnOn Delay Time
Rise Time
TurnOff Delay Time

(VDS = 15 Vdc, ID = 75 Adc,

VGS = 5.0 Vdc,
Rg = 4.7 )

Fall Time
Gate Charge
(VDS = 24 Vdc, ID = 75 Adc,
VGS = 5.0 Vdc)

ns

nC

SOURCEDRAIN DIODE CHARACTERISTICS

Forward OnVoltage

(IS = 75 Adc, VGS = 0 Vdc)

(IS = 75 Adc, VGS = 0 Vdc, TJ = 125C)

Reverse Recovery Time

(IS = 75 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
Reverse Recovery Stored Charge

VSD

Vdc

ns

(1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%.

(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values.
Max limit Typ
Cpk =
3 x SIGMA

Motorola TMOS Power MOSFET Transistor Device Data

MTP75N03HDL
TYPICAL ELECTRICAL CHARACTERISTICS
VGS = 10 V

5V

I D , DRAIN CURRENT (AMPS)

8V
120

150

4.5 V TJ = 25C
I D , DRAIN CURRENT (AMPS)

150

4V

6V

90
3.5 V
60
3V

30

VDS 10 V

120

90

60
100C

TJ = 55C

2.5 V
0

0.2

0.4 0.6 0.8

1
1.2
1.4 1.6
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)

1.8

0
1.5

TJ = 100C

25C

55C
0.004

0.002

30

60

90

120

150

R DS(on) , DRAINTOSOURCE RESISTANCE (OHMS)

VGS = 5 V

0.006

2
2.5
3
3.5
4
VGS, GATETOSOURCE VOLTAGE (VOLTS)

4.5

Figure 2. Transfer Characteristics

0.01

0.009
TJ = 25C
0.008

0.007

VGS = 5 V

0.006
10 V
0.005

0.004

ID, DRAIN CURRENT (AMPS)

75
50
100
ID, DRAIN CURRENT (AMPS)

Figure 3. OnResistance versus Drain Current

and Temperature

Figure 4. OnResistance versus Drain Current

and Gate Voltage

25

10000

1.6

1.2

0.8

125

150

TJ = 125C

VGS = 10 V
ID = 37.5 A
I DSS , LEAKAGE (nA)

RDS(on) , DRAINTOSOURCE RESISTANCE

(NORMALIZED)

R DS(on) , DRAINTOSOURCE RESISTANCE (OHMS)

Figure 1. OnRegion Characteristics

0.008

25C

30

100C

1000

100

10

0.4

25C
VGS = 0 V

50

25

0
25
50
75
100
TJ, JUNCTION TEMPERATURE (C)

125

150

Figure 5. OnResistance Variation with

Temperature

Motorola TMOS Power MOSFET Transistor Device Data

5
10
15
20
25
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)

30

Figure 6. DrainToSource Leakage

Current versus Voltage

MTP75N03HDL
POWER MOSFET SWITCHING
Switching behavior is most easily modeled and predicted
by recognizing that the power MOSFET is charge controlled.
The lengths of various switching intervals (t) are determined by how fast the FET input capacitance can be charged
by current from the generator.

The capacitance (Ciss) is read from the capacitance curve at

a voltage corresponding to the offstate condition when calculating td(on) and is read at a voltage corresponding to the
onstate when calculating td(off).

The published capacitance data is difficult to use for calculating rise and fall because draingate capacitance varies
greatly with applied voltage. Accordingly, gate charge data is
used. In most cases, a satisfactory estimate of average input
current (IG(AV)) can be made from a rudimentary analysis of
the drive circuit so that

At high switching speeds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source
lead, inside the package and in the circuit wiring which is
common to both the drain and gate current paths, produces a
voltage at the source which reduces the gate drive current.
The voltage is determined by Ldi/dt, but since di/dt is a function of drain current, the mathematical solution is complex.
The MOSFET output capacitance also complicates the
mathematics. And finally, MOSFETs have finite internal gate
resistance which effectively adds to the resistance of the
driving source, but the internal resistance is difficult to measure and, consequently, is not specified.
The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is
affected by the parasitic circuit elements. If the parasitics
were not present, the slope of the curves would maintain a
value of unity regardless of the switching speed. The circuit
used to obtain the data is constructed to minimize common
inductance in the drain and gate circuit loops and is believed
readily achievable with board mounted components. Most
power electronic loads are inductive; the data in the figure is
taken with a resistive load, which approximates an optimally
snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces
switching losses.

t = Q/IG(AV)
During the rise and fall time interval when switching a resistive load, VGS remains virtually constant at a level known as
the plateau voltage, VSGP. Therefore, rise and fall times may
be approximated by the following:
tr = Q2 x RG/(VGG VGSP)
tf = Q2 x RG/VGSP
where
VGG = the gate drive voltage, which varies from zero to VGG
RG = the gate drive resistance
and Q2 and VGSP are read from the gate charge curve.
During the turnon and turnoff delay times, gate current is
not constant. The simplest calculation uses appropriate values from the capacitance curves in a standard equation for
voltage change in an RC network. The equations are:
td(on) = RG Ciss In [VGG/(VGG VGSP)]
td(off) = RG Ciss In (VGG/VGSP)

15000

C, CAPACITANCE (pF)

12000

VDS = 0 V

VGS = 0 V

TJ = 25C

Ciss

9000
Crss
Ciss

6000

Coss

3000
0
10

Crss
5

0
VGS

10

15

20

25

VDS

GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (VOLTS)

Figure 7. Capacitance Variation

Motorola TMOS Power MOSFET Transistor Device Data

28

24
QT
20

5
Q2

Q1

VGS
16
12

3
TJ = 25C
ID = 75 A

4
VDS

Q3

0
0

10

50
20
30
40
QT, TOTAL GATE CHARGE (nC)

60

0
70

10000

t, TIME (ns)

VDS , DRAINTOSOURCE VOLTAGE (VOLTS)

VGS, GATETOSOURCE VOLTAGE (VOLTS)

MTP75N03HDL

tr

1000

TJ = 25C
ID = 75 A
VDD = 15 V
VGS = 5 V

tf
td(off)
td(on)

100

10
1

10

100

RG, GATE RESISTANCE (OHMS)

Figure 8. GateToSource and DrainToSource

Voltage versus Total Charge

Figure 9. Resistive Switching Time

Variation versus Gate Resistance

DRAINTOSOURCE DIODE CHARACTERISTICS

The switching characteristics of a MOSFET body diode
are very important in systems using it as a freewheeling or
commutating diode. Of particular interest are the reverse recovery characteristics which play a major role in determining
switching losses, radiated noise, EMI and RFI.
System switching losses are largely due to the nature of
the body diode itself. The body diode is a minority carrier device, therefore it has a finite reverse recovery time, trr, due to
the storage of minority carrier charge, QRR, as shown in the
typical reverse recovery wave form of Figure 12. It is this
stored charge that, when cleared from the diode, passes
through a potential and defines an energy loss. Obviously,
repeatedly forcing the diode through reverse recovery further
increases switching losses. Therefore, one would like a
diode with short t rr and low QRR specifications to minimize
these losses.
The abruptness of diode reverse recovery effects the
amount of radiated noise, voltage spikes, and current ringing. The mechanisms at work are finite irremovable circuit
parasitic inductances and capacitances acted upon by high

di/dts. The diodes negative di/dt during ta is directly controlled by the device clearing the stored charge. However,
the positive di/dt during tb is an uncontrollable diode characteristic and is usually the culprit that induces current ringing.
Therefore, when comparing diodes, the ratio of tb/ta serves
as a good indicator of recovery abruptness and thus gives a
comparative estimate of probable noise generated. A ratio of
1 is considered ideal and values less than 0.5 are considered
snappy.
Compared to Motorola standard cell density low voltage
MOSFETs, high cell density MOSFET diodes are faster
(shorter trr), have less stored charge and a softer reverse recovery characteristic. The softness advantage of the high
cell density diode means they can be forced through reverse
recovery at a higher di/dt than a standard cell MOSFET
diode without increasing the current ringing or the noise generated. In addition, power dissipation incurred from switching
the diode will be less due to the shorter recovery time and
lower switching losses.

I S , SOURCE CURRENT (AMPS)

75
TJ = 25C
VGS = 0 V

60

45

30

15

0
0.5

0.6

0.7

0.8

0.9

VSD, SOURCETODRAIN VOLTAGE (VOLTS)

Figure 10. Diode Forward Voltage versus Current

SAFE OPERATING AREA

Motorola TMOS Power MOSFET Transistor Device Data

MTP75N03HDL
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous draintosource voltage and
drain current that a transistor can handle safely when it is forward biased. Curves are based upon maximum peak junction temperature and a case temperature (TC) of 25C. Peak
repetitive pulsed power limits are determined by using the
thermal response data in conjunction with the procedures
discussed in AN569, Transient Thermal ResistanceGeneral Data and Its Use.
Switching between the offstate and the onstate may traverse any load line provided neither rated peak current (IDM)
nor rated voltage (VDSS) is exceeded, and that the transition
time (tr, tf) does not exceed 10 s. In addition the total power
averaged over a complete switching cycle must not exceed
(TJ(MAX) TC)/(RJC).
A power MOSFET designated EFET can be safely used
in switching circuits with unclamped inductive loads. For reli-

280
VGS = 20 V
SINGLE PULSE
TC = 25C

EAS, SINGLE PULSE DRAINTOSOURCE

AVALANCHE ENERGY (mJ)

I D , DRAIN CURRENT (AMPS)

1000

100
100 s
1 ms
10

10 ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT

1
0.1

able operation, the stored energy from circuit inductance dissipated in the transistor while in avalanche must be less than
the rated limit and must be adjusted for operating conditions
differing from those specified. Although industry practice is to
rate in terms of energy, avalanche energy capability is not a
constant. The energy rating decreases nonlinearly with an
increase of peak current in avalanche and peak junction temperature.
Although many EFETs can withstand the stress of drain
tosource avalanche at currents up to rated pulsed current
(IDM), the energy rating is specified at rated continuous current (ID), in accordance with industry custom. The energy rating must be derated for temperature as shown in the
accompanying graph (Figure 13). Maximum energy at currents below rated continuous ID can safely be assumed to
equal the values indicated.

dc

10

100

ID = 75 A

240
200
160
120
80
40
0
25

50

75

100

125

150

VDS, DRAINTOSOURCE VOLTAGE (VOLTS)

TJ, STARTING JUNCTION TEMPERATURE (C)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

Figure 12. Maximum Avalanche Energy versus

Starting Junction Temperature

Motorola TMOS Power MOSFET Transistor Device Data

MTP75N03HDL
TYPICAL ELECTRICAL CHARACTERISTICS

r(t), NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

1.0
D = 0.5

0.2
0.1
0.1

P(pk)

0.05
0.02

t1

0.01

t2
DUTY CYCLE, D = t1/t2

SINGLE PULSE
0.01
1.0E05
1.0E04

1.0E03

1.0E02

1.0E01

RJC(t) = r(t) RJC

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) RJC(t)

1.0E+00

1.0E+01

t, TIME (s)

Figure 13. Thermal Response

di/dt
IS
trr
ta

tb
TIME
0.25 IS

tp
IS

Figure 14. Diode Reverse Recovery Waveform

Motorola TMOS Power MOSFET Transistor Device Data

MTP75N03HDL
PACKAGE DIMENSIONS

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.

SEATING
PLANE

T
C

F
T

Q
1 2 3

STYLE 5:
PIN 1.
2.
3.
4.

H
K
Z
L

GATE
DRAIN
SOURCE
DRAIN

G
D
N

CASE 221A06
ISSUE Y

DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z

INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045

0.080

MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15

2.04

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters can and do vary in different
applications. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:

USA / EUROPE: Motorola Literature Distribution;
P.O. Box 20912; Phoenix, Arizona 85036. 18004412447

JAPAN: Nippon Motorola Ltd.; TatsumiSPDJLDC, Toshikatsu Otsuki,

6F SeibuButsuryuCenter, 3142 Tatsumi KotoKu, Tokyo 135, Japan. 0335218315

MFAX: RMFAX0@email.sps.mot.com TOUCHTONE (602) 2446609

INTERNET: http://DesignNET.com

HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 85226629298

*MTP75N03HDL/D*

Motorola TMOS Power MOSFET Transistor

Device Data
MTP75N03HDL/D

This datasheet has been download from:

www.datasheetcatalog.com
Datasheets for electronics components.