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Preferred Device
Power MOSFET
75 Amps, 25 Volts, Logic Level
NChannel TO220
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a draintosource diode with a fast recovery time. Designed for
lowvoltage, highspeed switching applications in power supplies,
converters and PWM motor controls, and inductive loads. The
avalanche energy capability is specified to eliminate the guesswork in
designs where inductive loads are switched, and to offer additional
safety margin against unexpected voltage transients.
SPICE Parameters Available
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Avalanche Energy Specified
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75 AMPERES
25 VOLTS
RDS(on) = 9 m
NChannel
D
Value
Unit
DrainSource Voltage
VDSS
25
Vdc
VDGR
25
Vdc
VGS
15
20
Vdc
Vpk
75
59
225
Adc
PD
150
1.0
Watts
W/C
TJ, Tstg
55 to
175
EAS
280
mJ
Rating
GateSource Voltage
Continuous
Single Pulse (tp 10 ms)
Drain Current Continuous
Continuous @ 100C
Single Pulse (tp 10 s)
Total Power Dissipation
Derate above 25C
Operating and Storage Temperature
Range
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25C
(VDD = 25 Vdc, VGS = 5.0 Vdc,
IL = 75 Apk, L = 0.1 mH, RG = 25 )
Thermal Resistance
Junction to Case
Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/8 from case for 10
seconds
ID
ID
IDM
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
Apk
TO220AB
CASE 221A
STYLE 5
1
MTP75N03HDL
LLYWW
1
Gate
2
Drain
C/W
RJC
RJA
1.0
62.5
TL
260
3
Source
MTP75N03HDL
LL
Y
WW
= Device Code
= Location Code
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
MTP75N03HDL
TO220AB
50 Units/Rail
MTP75N03HDL
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
25
Unit
OFF CHARACTERISTICS
(Cpk 2.0) (Note 3.)
V(BR)DSS
Vdc
mV/C
IDSS
IGSS
Adc
100
500
100
1.0
1.5
2.0
nAdc
VGS(th)
Vdc
mV/C
RDS(on)
6.0
9.0
0.68
0.6
gFS
15
55
mhos
Ciss
4025
5635
pF
Coss
1353
1894
Crss
307
430
td(on)
24
48
VDS(on)
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
Fall Time
Gate Charge
(VDS = 24 Vdc, ID = 75 Adc,
VGS = 5.0 Vdc)
tr
493
986
td(off)
60
120
tf
149
300
QT
61
122
Q1
14
28
Q2
33
66
Q3
27
54
0.97
0.87
1.1
trr
58
ta
27
tb
30
QRR
0.088
ns
nC
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2
VSD
Vdc
ns
MTP75N03HDL
TYPICAL ELECTRICAL CHARACTERISTICS
VGS = 10 V
5V
8V
120
4.5 V
150
TJ = 25C
I D , DRAIN CURRENT (AMPS)
150
4V
6V
90
3.5 V
60
3V
30
VDS 10 V
120
90
60
100C
TJ = 55C
2.5 V
0
0.2
1.8
0
1.5
TJ = 100C
25C
0.006
55C
0.004
0.002
30
60
90
120
2
2.5
3
3.5
4
VGS, GATETOSOURCE VOLTAGE (VOLTS)
4.5
VGS = 5 V
0.008
150
0.009
TJ = 25C
0.008
0.007
VGS = 5 V
0.006
10 V
0.005
0.004
75
50
100
ID, DRAIN CURRENT (AMPS)
25
10000
1.6
1.2
0.8
0.4
125
150
TJ = 125C
VGS = 10 V
ID = 37.5 A
I DSS , LEAKAGE (nA)
0.01
25C
30
100C
1000
100
10
25C
VGS = 0 V
50
25
0
25
50
75
100
TJ, JUNCTION TEMPERATURE (C)
125
150
5
10
15
20
25
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
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3
30
MTP75N03HDL
POWER MOSFET SWITCHING
Switching behavior is most easily modeled and predicted
by recognizing that the power MOSFET is charge
controlled. The lengths of various switching intervals (t)
are determined by how fast the FET input capacitance can
be charged by current from the generator.
The published capacitance data is difficult to use for
calculating rise and fall because draingate capacitance
varies greatly with applied voltage. Accordingly, gate
charge data is used. In most cases, a satisfactory estimate of
average input current (IG(AV)) can be made from a
rudimentary analysis of the drive circuit so that
t = Q/IG(AV)
During the rise and fall time interval when switching a
resistive load, VGS remains virtually constant at a level
known as the plateau voltage, VSGP. Therefore, rise and fall
times may be approximated by the following:
tr = Q2 x RG/(VGG VGSP)
tf = Q2 x RG/VGSP
where
VGG = the gate drive voltage, which varies from zero to VGG
RG = the gate drive resistance
and Q2 and VGSP are read from the gate charge curve.
During the turnon and turnoff delay times, gate current is
not constant. The simplest calculation uses appropriate
values from the capacitance curves in a standard equation for
voltage change in an RC network. The equations are:
td(on) = RG Ciss In [VGG/(VGG VGSP)]
td(off) = RG Ciss In (VGG/VGSP)
15000
C, CAPACITANCE (pF)
12000
VDS = 0 V
VGS = 0 V
TJ = 25C
Ciss
9000
Crss
Ciss
6000
Coss
3000
0
10
Crss
5
0
VGS
10
15
20
25
VDS
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4
28
24
QT
20
5
Q2
Q1
VGS
16
12
3
TJ = 25C
ID = 75 A
1
0
4
VDS
Q3
0
10
50
20
30
40
QT, TOTAL GATE CHARGE (nC)
60
0
70
10000
t, TIME (ns)
MTP75N03HDL
tr
1000
tf
td(off)
100
10
TJ = 25C
ID = 75 A
VDD = 15 V
VGS = 5 V
td(on)
10
100
75
TJ = 25C
VGS = 0 V
60
45
30
15
0
0.5
0.6
0.7
0.8
0.9
MTP75N03HDL
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous draintosource voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (TC) of 25C.
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed
in
AN569,
Transient
Thermal
ResistanceGeneral Data and Its Use.
Switching between the offstate and the onstate may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (VDSS) is exceeded, and that the
transition time (tr, tf) does not exceed 10 s. In addition the
total power averaged over a complete switching cycle must
not exceed (TJ(MAX) TC)/(RJC).
A power MOSFET designated EFET can be safely used
in switching circuits with unclamped inductive loads. For
280
VGS = 20 V
SINGLE PULSE
TC = 25C
1000
100
100 s
1 ms
10
10 ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
0.1
dc
200
160
120
80
40
0
25
100
10
ID = 75 A
240
50
75
100
125
150
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6
MTP75N03HDL
TYPICAL ELECTRICAL CHARACTERISTICS
1.0
0.1
D = 0.5
0.2
0.1
P(pk)
0.05
0.02
t1
0.01
SINGLE PULSE
0.01
1.0E05
1.0E04
t2
DUTY CYCLE, D = t1/t2
1.0E03
1.0E02
1.0E01
t, TIME (s)
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
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7
1.0E+00
1.0E+01
MTP75N03HDL
PACKAGE DIMENSIONS
TO220 THREELEAD
TO220AB
CASE 221A09
ISSUE AA
SEATING
PLANE
T
B
F
T
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
Q
1 2 3
H
K
Z
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
0.080
STYLE 5:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
2.04
GATE
DRAIN
SOURCE
DRAIN
ON Semiconductor and
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MTP75N03HDL/D