Академический Документы
Профессиональный Документы
Культура Документы
Printed
209
210
Vol. 6, No. 4
Nucleation
Annealing,Reox~dahon
1600
.c
~n 0 2
/ ,oF,oo ;
1
/
~oc /
I
~ t i m e
W i t h d r a w a l of c r y s t a l
f r o m melt
lO h
Pt - f i n g e r :
c o o l i n g air
FIG. I
Program of a crystal growth run for (Ba,Sr)TiO 3
Vol. 6, No. 4
211
60
c.)~
10
10 20 30 40 50 60 70 80 90 100"/.
Melt with 28 mob-*/. TiO2-excess
BaTiO3
~ t Sr Ti 03
melt.
FIG. 2
Substitution ratio Ba/Sr
in melt and crystal
Homogeneity
212
Vol. 6, No. 4
0.~o
However,
..0.5
351
= 0.9...I .4 10 -3
smaller, because the measured linewidth is mostly due to dielectric losses in the perfect
(homogeneous)
crystal (compare
that our
different parts of a crystal (electrodeless microwave measurements, accuracy better than I C).
2) Abrupt disappearence
observations
The occurence
of such striations is intimately connected with thermal fluctuations within the melt which could not be detected during
our growth process
growing crystal).
The microscopic homogeneity was checked by X-ray diffraction: The 200-reflex near 2@ = 46 showed no extra broadening
(b2 in Table I). Thus the upper limit for inhomogeneities
smaller than about 5 ~m is set to 1.5% spread in Ba/Sr-ratio.
Dielectric Measurements
From the obtained single crystals,
strain,
flaws or inclusions
After an
Vol.6, No.4
(Ba,Sr)TiO3SINGLECRYSTALS
213
high Sr-contents.
Most low-frequency dielectric measurements were made with
a Wayne Kerr precision bridge between 30 Hz and 20 kHz. Probing
field strength always was less than 10 V/cm. The parallel
biasing field usually was a pulsed field with a repetition
frequency around 10 Hz as indicated in Figure 3. The voltage
integral over one period was adjusted to zero the prevent
space charge near the electrodes within the crystal. During
these measurements the samples were kept in dry pressurized
helium.
the ferro~o
phase tran-
the second
BT
2o
electric
sition and
BST-47
\~
!i!~x.....~ i
~0 ~
(orthorhombic )
phase transition. All
mixed crys-
//~,/
100
tals of
(Ba,Sr)TiO 3
grown show
very distinct
200
300
K
400
~T
FIG. 3
Dielectric constant vs temperature of SrTiO 3,
Bao.A~Sr 0 =~Ti0~ and BaTiO~ (Parameter: biasing
~
" ~ voltage in kVlcm).
214
Vol. 6, No. 4
4BP 3 + ...
(1)
+ 12BP 2 + ...
(2)
= 2AP +
1/c = 2A
~~ 1
. p2
C(o) C(s)
C(o )3 C(Z )3
-
"
= 7
tO kVlcm
20kVIcm
m 30 kV/cm
o 52kVIcm
?
10
Z
40
BST- 30
C~
o
0
I|i
I
I
30
KI
I
I
20
(3)
tO
\ , , ~ a . 8c
-,~o
-1()0
~T
oC
-50
FIG. 4
Complex permittivity and nonlinearity constant N of a single crystal (Ban.3Srn 7) Ti03
at 1.6 kHz.
( ~ = Y~ V/cm).
Vol. 6, No. 4
quadratic coefficient in
Devonshire's theory and
that higher order terms
of the power series
expansion can be neglected.
215
5O
~
~-~ 4 0 [ - \
= Ceromics
a Single cryslols
'1
- ~
- SrTiO3'KTa03
1.Order 2.0rcler
FIG. 5
Difference of ferroelectric
phase transition temperature
(Tnh) and extrapolated Curie
~temperature (Tc) as a
function of substitution
ratio for (Ba,Sr)TiO~ and
K(Ta,Nb)O 3.
whereas a
216
Vol. 6, No. 4
Thus we conclude:
Within the
becomes
system
changes from
Vol. 6, No. 4
217
TABLE 1
List of Data of (Ba,Sr)TiO 3 Single Crystals
xl%
bo.9/C N-101~(I~) 2
(BaxSr1_x)TiO 3
BT
BST 87
=98
3.992
4.036
--
4.8
+104
+119(H)
87
3.981
4.004
<0.1
3.9
+60
+67(H)
1.26
I0
(0.1)
-80
-80
1.6
8.6
7-0.32
~9.5
<5
=-0.4
0.885
~I0
<4
4.2
BST 47
47.5
3.935
0.05
BST 34
34.2
3.928
0.06
40
-126
-127
0.813
~12
74
=6
BST 30
30
3.925
0.05
-141
-141
0.81
~11
<4
7.5
BST 27
27.6
3.922
0.05
20
-151
-150
0.795
~16
--
=9
0.05
I0
(0.01)
-247
0.80
25.5
--
12.9
ST
3.905
2.
3.
S. Triebwasser,
4.
5.
S. Triebwasser,
6.