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International Journal of Semiconductor Science & Technology (IJSST) ISSN(P): 2250-1576; ISSN(E): 2278-9405 Vol. 4, Issue 1, Oct 2014, 1-4 © TJPRC Pvt. Ltd.

2278-9405 Vol. 4, Issue 1, Oct 2014, 1-4 © TJPRC Pvt. Ltd. FOREIGN MATTER REDUCTION IN

FOREIGN MATTER REDUCTION IN HIGH DENSITY PLASMA CHEMICAL VAPOR DEPOSITION PROCESS

VIVEK KRISHNAMOORTHY Ellora, Chhedanagar, Mumbai, Maharashtra, India

ABSTRACT

This paper describes the aspects of foreign matter reduction in the High Density Plasma chemical vapor deposition (HDP-CVD) process. Methodologies to reduce foreign matter were verified experimentally. Based on the results obtained a correlation between process parameters and foreign matter was obtained. The analysis of such data led to accuracy in determination the causes of foreign matter in a HDP-CVD process. The yield and productivity of equipments were increased by employing methods to reduce foreign matter contamination. A correlation was also drawn between particle counts and causes of foreign matter. Experiments were carried out for numerous tool sets. All the activities were carried out in a real time semiconductor fab.

KEYWORDS: Foreign Matter, HDP – CVD, Semiconductor

INTRODUCTION

In Semiconductor industry frequent analysis of wafers is carried out to measure foreign matter contamination. Foreign matter contamination can arise due to different reasons. Foreign matter tests are carried out which determine nature of particles as well as number of particles. Size of particles can also be determined from foreign matter tests. The equipments which detect such foreign matter are easily available and deployable in a semiconductor fab or environment. Due to shrink in dimensions, sophisticated equipments are available for the size range of particles to be evaluated. A few causes of foreign matter contamination to start of with are unclean gas feed, unclean wafers used to measure foreign matter, improper handling of wafers and improper handling of wafer caskets. GMP practices should be strictly followed while working in semiconductor fabs and environment. For example poor indoor air quality could lead to widespread contamination in semiconductor fabs and environment.

DISCUSSIONS

A tool or equipment in a semiconductor fab runs many processes designed by engineers. While the tool or equipment runs many recipes designed by the engineer it does different work each time but the tool set yet is not confused by the variety of the processes being run. After running multiple recipes and ending a cycle, a tool may undergo changes in which some of them are deposition of material on chamber walls, changes in the electrostatic chuck parameters, changes in flow rates of gases and inerting agents and power and plasma conditions. These changes were prevalent for every tool set that operates in the semiconductor fabs and environment. When equipment process parameters defined deviate from the set parameters, a deviation from the observed result may cause a rise in foreign matter contamination. In a High Density Plasma Chemical Vapor Deposition (HDP-CVD) process, an equipment or tool had material deposited on the chamber walls before the designated semiconductor process commences. An equipment or tool undergoes frequent temperature

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Vivek Krishnamoorthy

cycles. The outcome of this resulted in flaking of chamber walls contributing to foreign matter contamination. Frequent change in electrostatic chuck parameters resulted in contribution to foreign matter contamination due to inconsistent conditions of the wafer placed on the electrostatic chuck. Rust/ dust in the cylinders supplying gases for deposition or etching or inerting could have contributed to foreign matter contamination. Another source of contamination could have been variable changes in plasma conditions like plasma temperature and ionizing power. Variable ionizing power altered the mechanisms in a tool set and could lead to foreign matter. Major contribution to foreign matter contamination could have been determined by the size of the particles or foreign matter and their counts. A systematic analysis prevented the cause of such foreign matter. There was an increase in foreign matter because of continuous runs or when cleaning is not performed frequently. The size range of the foreign matter was obtained through particle measuring systems. A blanket wafer was used for foreign matter (spot) determination before the start of the process recipe. It was used for spot determination before the tool ran the cleaning recipe. It was also used after the tool ran the cleaning recipe but before the process recipe. This would give an indication how the tool performed in the last run and indicated if there were any major problems in the tool. When the tool failed spot determination limits, it gave an indication how the tool performed in the run. Spot determination failure by a large number and size indicated that either cleaning of the tool was not performed or a major process parameter in the recipe was changed. Many experiments were performed in the semiconductor fab with respect to foreign matter contamination without disturbing the manufacturing output. Nozzles which let in the gases for deposition or etching were thoroughly cleaned of any deposits. Orientation of these nozzles was an important factor in accurate deposition or etching. When the wafer in the tool set was subject to different temperature conditions in the HDP-CVD process, spot determination varied. Thus accurate temperature control of the substrate is of great importance in the HDP-CVD process. EDX was performed to detect the constituents or elemental nature of foreign matter deposited on substrates. This helped in deciding which part of the process failed when the recipe was run in the tool. For example higher amount of Aluminium indicated that etching of the chamber wall had taken place. Higher amount of oxygen indicated that the insulator SiO 2 was significant in the process run. A spot determination test after each of the recipe run indicated whether the process parameters and the condition of the tool set were right. Some tools failed spot determination tests after a few continuous runs while other tools failed after many continuous runs. These results did not indicate the nature of failure neither did they improve the performance of the tools. In such conditions yield of the equipment was drastically reduced. By conducting regular spot determination tests productivity of the tool sets were increased. The precoat layer duration or precoat layer deposition rate was modified to prevent flaking of layers from chamber walls. These many changes, tests and methodology when put in place helped reduce foreign matter contamination in the HDP-CVD process.

CONCLUSIONS

Foreign matter in HDP – CVD process can be reduced by the methodologies employed. While the most prevalent conditions have been taken care of, methodologies of reducing foreign matter may differ say for example in the reactive ion etching process. Process parameters and other conditions mentioned were based on real time manufacturing conditions in a semiconductor fabrication unit. Experiments carried out based on the above description resulted in a decrease in foreign matter for HDP-CVD conditions.

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