English presentation:

48.
Hi, my name is Monica and I am going to talk about the fundamental characteristics of
power MOSFETs which are: maximum drain-source voltage, maximum drain current,
drain-source on state resistance, drain-source breakdown voltage and gate threshold
voltage, and switching process.
The maximum drain-source voltage corresponds to the breakdown voltage of the
junction forming the substrate and the drain. It is measured with the shorted gate to
source.
The maximum drain-source voltage is represented as Vdd or Vbrdss. This value is used
to classify the power MOSFET transistors. An example of classification is shown in this
slide, which is classified into low, medium and high voltage. Low voltage goes from 15 V
to 80V, medium voltage from 100 V to 400 V and high voltage from 500 to 1200 V.
49.
Another characteristic is the maximum drain current. The manufacturer supplies two
values (at least); these two values are the maximum continuous drain current, Id and
the maximum pulsed drian current, Idm.
This table shows the different parameters mentioned so far and the conditions that have
to accomplish to reach a certain maximum or minimum.

Between a (operating junction) temperature of 25 C and 175C (degrees

Celsius) the drain-source voltage reaches a maximum voltage of 100 volts.
Between a (operating junction) temperature of 25 C and 175C (degrees
Celsius) and a gate-source resistance of 20 KOhmios, the drain-gate voltage
reaches a maximum voltage of 100 volts.
In the same conditions of the previous parameter (drain-gate voltage), the gatesource voltage reaches a maximum voltage of 20 volts and a minimum of 20
volts.
With a mounting base temperature of 25C and gate-source voltage of 10 volts,
the continuous drain current reaches a maximum intensity of 23 Amps.
With a mounting base temperature of 100C and gate-source voltage of 10
volts, the pulsed drain current reaches a maximum intensity of 16 Amps and
the same parameter with a mounting base temperature of 25C it reaches a
maximum intensity of 92 Amps.
With a mounting base temperature of 25C, the total power dissipation reaches
a maximum of 100 watts and operating junction and storage temperature
reaches a minimum of -55C and a maximum of 175C.

In this graph shows that the maximum continuous drain current ID depends on the
mounting base temperature. With the temperature increases the intensity decreases.
50.

The third characteristic is drain-source on state resistance. It is one of the most

important parameters in a MOSFET. The device is better when decreases drain-source
on state resistance. It is represented by the letters RDS (on). For a particular device, it
increases with the temperature. For a particular device, it decreases with the gate
voltage. This decrease is limited.
The graph on the left shows that increasing junction temperature also increases
normalized on-state resistance. In the graph on the right is shown that with typical onstate resistance of 25 C the drain-source on resistance depends on the drain current
for different values of gain-source voltage.
51.
The following tables compare different devices with similar Id values, RDS (on) increases
with the value of VDSS.
52.
In recent times values for RDS (on) have been improved in devices of VDSS relatively
high (600-1000 V).