Motorola - Small Signal Transistors FETS and Diodes Data - Dl126rev6

Selector Guide
Plastic-Encapsulated
Transistors
GreenLine Portfolio
Devices
Small-Signal Field-Effect
Transistors and MOSFETs
Small-Signal Tuning
and Switching Diodes
Tape and Reel Specifications

and Packaging Specifications
Surface Mount
Information
Package Outline
Dimensions
Reliability and
Quality Assurance
Replacement
Devices
10
Alphanumeric Index
11
Motorola Small-Signal Transistors, FETs and Diodes Device Data
TMOS is a registered trademark of Motorola Inc.

HDTMOS and GreenLine are trademarks of Motorola Inc.
Thermal Clad is a trademark of the Bergquist Company.
SMALLSIGNAL TRANSISTORS,
FETs AND DIODES
This publication presents technical information for the several product families that comprise the Motorola
smallsignal semiconductor line. The families include bipolar transistors, fieldeffect transistors, and diodes. These
are available in a variety of through hole and surface mount packages. Complete device specifications and typical
performance curves are given on individual data sheets, which are grouped by the various families.
A quick comparison of performance characteristics is presented in the easytouse selector guide in the first
section. The tables will assist in the selection of the proper device for a specific application.
Seperate sections are included to describe package outline drawings and footprints and product reliability and
quality considerations.
The information in this book has been carefully checked and is believed to be accurate; however, no responsibility
is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor
devices any license under the patent rights to the manufacturer.
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no
warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does
Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims
any and all liability, including without limitation consequential or incidental damages. Typical parameters which may
be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including Typicals must be validated for each customer
application by customers technical experts. Motorola does not convey any license under its patent rights nor the
rights of others. Motorola products are not designed, intended, or authorized for use as components in systems
intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other
application in which the failure of the Motorola product could create a situation where personal injury or death may
occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer
shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges
that Motorola was negligent regarding the design or manufacture of the part. Motorola and
are registered
trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
Motorola, Inc. 1997

Previous Edition 1994
Printed in U.S.A.
Motorola SmallSignal Transistors, FETs and Diodes Device Data
All Rights Reserved
About This Revision

To accomodate the increasing requirements for surface mount components, this publication adds a variety of
device types in several choices of surface mount packages.
An expanded MOSFET portfolio to include new lower RDS(on) HDTMOS devices in the TSOP6 package.
Dual transistors and diodes in the SC70 multilead package.
A Family of transistors and diodes in the smaller SC90 package.
It should be noted that Metal Can Transistors previously listed in this data book have been removed for this revision.
Replacement devices for these parts can be found in Chapter 10.
ii
Motorola Device Classifications

In an effort to provide current information to the customer regarding the status of any given device, Motorola has
classified all devices into three categories: Preferred devices, Current product and Not Recommended for New
Design products.
A Preferred device is a device which is recommended as a first choice for future use. These devices are preferred
by virtue of their performance, price functionality, or combination of attributes which offer the overall best value to
the customer. This category contains both advanced and mature devices which will remain available for the
foreseeable future (generally 3 to 5 years).
Device types identified as current are not a first choice product for new designs, but will continue to be available
because of the popularity and/or standardization or volume usage in current production designs. These products can
be acceptable for new designs but the preferred types are considered better alternatives for long term usage.
Any device that has not been identified as a preferred device is a current device.
Products designated as Not Recommended for New Design may become obsolete as dictated by poor market
acceptance, or a technology or package that is reaching the end of its life cycle. Devices in this category have an
uncertain future and do not represent a good selection for new device designs or long term usage.
All Not Recommended for New Design devices have been removed from the data book. In the event the
device you need is no longer found within an appropriate section of the data book, refer to the Replacement
Devices index at the back of the book to see if there is a Replacement Part for the device in question.
iii
Table of Contents
Selector Guide . . . . . . . . . . . . . . . . . . . . . 11
Bipolar Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
PlasticEncapsulated Transistors . . . . . . . . . . . . . . . . 12
PlasticEncapsulated Multiple Transistors . . . . . . . . . 18
PlasticEncapsulated Surface Mount
Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110
FieldEffect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . 118
JFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118
TMOS FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120
Surface Mount FETs . . . . . . . . . . . . . . . . . . . . . . . . . . 121
Tuning and Switching Diodes . . . . . . . . . . . . . . . . . . . . . 123
Tuning Diodes Abrupt Junction . . . . . . . . . . . . . . . 123
Tuning Diodes HyperAbrupt Junction . . . . . . . . 126
Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129
Switching Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131
Multiple Switching Diodes . . . . . . . . . . . . . . . . . . . . . . 135
GreenLine Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . 136
Small Signal MultiIntegrated Devices . . . . . . . . . . . 138
PlasticEncapsulated Transistors . . . 21
Embossed Tape and Reel . . . . . . . . . . . . . . . . . . . . . . . . .
Radial Tape in Fan Fold Box or Reel . . . . . . . . . . . . . . . .
Device Markings/Date Code Characters . . . . . . . . . . . . .
Data Sheets . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
22
22
22
23
GreenLine Portfolio . . . . . . . . . . . . . . . 31
Data Sheets . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
SmallSignal FieldEffect
Transistors and MOSFETs . . . . . . . . . . . . 41
Data Sheets . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
iv
42
42
42
43
SmallSignal Tuning and

Switching Diodes . . . . . . . . . . . . . . . . . . 51
Data Sheets . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
52
52
52
53
Tape and Reel Specifications and

Packaging Specifications . . . . . . . . . . . . 61
Tape and Reel Specifications . . . . . . . . . . . . . . . . . . . . . . 62
Packaging Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . 65
Surface Mount Information . . . . . . . . . 71

Information for Using Surface Mount Packages . . . . . . . 72
Footprints for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . 74
Package Outline Dimensions . . . . . . . 81

Package Outline Dimensions . . . . . . . . . . . . . . . . . . . . . . . 82
Reliability and Quality Assurance . . . 91

Outgoing Quality . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reliability Data Analysis . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Air Flow . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Activation Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reliability Stress Tests . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Statistical Process Control . . . . . . . . . . . . . . . . . . . . . . . . .
92
92
94
94
94
95
97
Replacement Devices . . . . . . . . . . . . . 101

Alphanumeric Index . . . . . . . . . . . . . . . 111
Section 1
Selector Guide
In Brief . . .
This selector guide highlights semiconductors that are the
most popular and have a history of high usage for the most
applications.
A large selection of encapsulated plastic transistors, FETs
and diodes are available for surface mount and insertion
assembly technology. Plastic packages include TO-92
(TO226AA), 1-Watt TO-92 (TO226AE), SOT-23,
SC-70/SOT-323, SC90/SOT416, SC-59, SOD-123,
SOT223, SOT363, and TSOP6. Plastic multiples are
available in 14pin and 16pin dualinline packages for
insertion applications: SO14 and SO16 for surface mount
applications.
Selector Guide
11
Bipolar Transistors
PlasticEncapsulated
Transistors
23
CASE 2905
TO226AE
1WATT (TO92)
Motorolas Small Signal TO226 plastic transistors

encompass hundreds of devices with a wide variety of
characteristics for generalpurpose, amplifier and switching
applications. The popular highvolume package combines
proven reliability, performance, economy and convenience to
provide the perfect solution for industrial and consumer design
problems. All devices are laser marked for ease of
identification and shipped in antistatic containers, as part of
Motorolas ongoing practice of maintaining the highest
standards of quality and reliability.
23
CASE 2904
TO226AA
(TO92)
Table 1. PlasticEncapsulated GeneralPurpose Transistors

These generalpurpose transistors are designed for smallsignal amplification from dc to low ratio frequencies. They are
also useful as oscillators and generalpurpose switches. Complementary devices shown where available (Tables 14).
NPN
PNP
V(BR)CEO
Volts
Min
fT @ IC
MHz
Min
hFE @ IC
mA
IC
mA
Max
Min
Max
10
10
10
10
10
10
50
10
10
10
10
10
10
10
5.0
20
20
20
50
10
10
10
10
10
10
10
10
10
500
500
250
100
100
500
600
100
100
800
100
100
100
100
100
600
600
600
1000
200
200
100
100
100
100
200
200
800
100
100
60
120
180
100
100
120
200
100
120
120
180
380
40
100
100
50
50
50
100
110
120
200
420
50
120
100
300
400
450
450
300
500
460
630
800
220
450
800
400
300
300
150
150
300
800
220
450
800
150
360
630
mA
NF
dB
Max
Style
1.0
100
10
2.0
2.0
100
150
2.0
2.0
100
2.0
2.0
2.0
2.0
5.0
150
150
150
500
10
10
2.0
2.0
2.0
2.0
2.0
2.0
100
10
10
10
10
10
10
10
10
6.0
5.0
10
10
10
10
6.0
4.0
1
1
1
17
17
1
1
14
17
17
17
17
17
17
1
1
1
1
1
1
1
17
17
17
17
1
1
17
Case 2904 TO226AA (TO92)

MPS8099
MPSA06
2N4410
BC546
BC546B
MPSA05
BC182
BC237B
BC337
BC547
BC547A
BC547B
BC547C
MPSA20
MPS2222A
2N4401
2N4400
MPS6602
2N3903
2N3904
BC548
BC548A
BC548B
BC548C
2N4123
2N4124
BC338
MPS8599
MPSA56
BC556
BC556B
MPSA55
MPS2907A
BC212
BC307B
BC327
BC557
BC557A
BC557B
BC557C
MPSA70
2N4403
2N4402
MPS6652
2N3905
2N3906
BC558B
2N4125
BC328
80
80
80
65
65
60
60
50
45
45
45
45
45
45
40
40
40
40
40
40
40
30
30
30
30
30
25
25
150
100
60
150
150
100
200
200(1)
150
210(1)
150
150
150
150
125
300
200
150
100
200
250
300(1)
300(1)
300(1)
300
200
250
210(1)
(1) Typical
Devices listed in bold, italic are Motorola preferred devices.
Selector Guide
12
PlasticEncapsulated Transistors (continued)

Table 1. PlasticEncapsulated GeneralPurpose Transistors (continued)
NPN
PNP
V(BR)CEO
Volts
Min
fT @ IC
MHz
Min
hFE @ IC
VCE(sat) @ IC @ IB
mA
IC
A
Max
Min
Max
mA
Volts
Max
mA
mA
Style
200
200
200
200
0.5
0.5
0.5
0.5
40
40
80
80
400
400
100
100
50
50
0.7
0.7
0.5
0.4
1000
1000
250
250
100
100
10
10
14
1
1
1
Case 2905 TO226AE (1WATT TO92)

BDC01D
BDB01C
MPS6717
MPSW06
BDB02C
MPSW56
100
80
80
80
50
50
50
50
Table 2. PlasticEncapsulated LowNoise and Good hFE Linearity

These devices are designed to use on applications where good hFE linearity and lownoise characteristics are required:
Instrumentation, hifi preamplifier.
hFE @ IC
NPN
PNP
V(BR)CEO
Volts
Min
Max
mA
250
250
120
180
380
500
100
250
200
380
350
450
300
800
650
800
450
800
300
450
800
600
0.1
0.1
2.0
2.0
2.0
1.0
10
10
2.0
2.0
1.0
1.0
2.0
VT(4)
mV
Typ
NF(5)
dB
Max
fT
MHz
Typ
7.0(7)
9.5
6.5(1)
2.0
3.5(8)
2.0(1)
2.5
2.5
5.0
2.0
2.5
2.5
3.0
2.0
3.0
40(2)
100(2)
280
250
250
160
200(2)
Style
MPS6428
BC239
BC550B
BC550C
MPSA18
MPS3904
BC549B
BC549C
2N5088
2N5089(6)
MPS6521
(1)
(2)
(4)
(5)
(7)
(8)
2N5087
BC560C
MPS3906
MPS4250
BC559B
BC559C
MPS6523
50
50
45
45
45
45
40
40
30
30
30
25
25
250
250
50
50
1
1
17
17
17
1
1
1
17
17
1
1
1
Typical
Min
VT : Total Input Noise Voltage (see BC413/BC414 and BC415/BC416 Data Sheets) at RS = 2.0 k , IC = 200 A, VCE = 5.0 Volts.
NF: Noise Figure at RS = 2.0 k, IC = 200 A, VCE = 5.0 Volts. f = 30 Hz to 15 kHz.
RS = 10 k , BW = 1.0 Hz, f = 100 MHz
RS = 500 , BW = 1.0 Hz, f = 10 MHz
Selector Guide
13

Table 3. PlasticEncapsulated Darlington Transistors
Darlington amplifiers are cascade transistors used in applications requiring very highgain and input impedance. These
devices have monolithic construction.
hFE @ IC
NPN
PNP
V(BR)CEO
Volts
VCE(sat) @ IC & IB
f T @ IC
Min
Max
mA
Volts
Max
mA
mA
Min
mA
Style
1000
1000
25K
20K
150K
200
100
1.5
1.5
1000
100
2.0
0.1
100
125
200
10
1
1
500
1000
500
1000
500
500
500
500
500
1000
10K
10K
10K
10K
10K
20K
30K
20K
10K
30K
160K
50K
200K
300K
100
100
100
200
100
100
100
100
100
20
1.5
1.1
1.5
1.1
1.5
1.5
1.5
1.5
1.5
1.0
100
250
100
200
100
500
500
100
100
100
0.1
0.25
0.1
0.2
0.1
0.5
0.5
0.1
0.1
0.1
125
100
150
125
125
125
200(1)
10
100
500
10
10
10
10
1
1
1
17
1
1
1
1
1
17
IC
Max

MPSW45A
MPSW64
50
30

MPSA29
BC373
MPSA27
BC618
2N6427
2N6426
MPSA14
MPSA13
BC517
MPSA77
MPSA75
MPSA64
MPSA63
100
80
60
55
40
40
40
30
30
30
Table 4. PlasticEncapsulated HighCurrent Transistors

The following table is a listing of devices that are capable of handling a higher current range for smallsignal transistors.
NPN
PNP
V(BR)CEO
Volts
Min
fT @ IC
hFE @ IC
mA
IC
mA
Max
Min
Max
50
50
1000
1000
50
50
200/150(1)
60
75
75
65
50
10
50
50
10
1000
500
2000
2000
1000
60
40
75
75
60
MHz
Min
VCE(sat) @ IC & IB
mA
Volts
Max
mA
mA
Style
1000
1000
0.5
0.5/0.7
1000
1000
100
100
1
1
400
160
100
150
1000
1000
1000
0.3/0.5
0.5
0.5
0.5
0.5
1000
500
2000
2000
1000
100
50
200
200
100
17
14
1
1
1

MPS6715
MPSW01A
MPS6727
MPSW51A
40
40

BC489
BC639
MPS651
MPS650
BC368
BC490
BC640
MPS751
MPS750
BC369
80
80
60
40
20
(1) Typical
Selector Guide
14

Table 5. PlasticEncapsulated HighVoltage Amplifier Transistors
These highvoltage transistors are designed for driving neon bulbs and indicator tubes, for direct line operation, and for
other applications requiring highvoltage capability at relatively low collector current. These devices are listed in order of
decreasing breakdown voltage (V(BR)CEO).
Device
Type
V(BR)CEO
Volts
Min
hFE @ IC
IC
Amp
Max
Min
VCE(sat) @ IC & IB
f T @ IC
Volts
Max
mA
mA
MHz
Min
mA
Style
0.5
20
2.0
50
10
30
0.5
20
2.0
50
10
10
100
30
10
10
10
0.5
0.75
0.3
0.2
0.5
0.15
10
50
10
20
20
10
1.0
5.0
1.0
2.0
2.0
1.0
40
50
50
100
10
10
10
10
1
1
1
1
1
1
10
30
10
30
10
20
0.3
0.5
0.3
0.2
20
10
20
10
10
2.0
1.0
2.0
1.0
1.0
50
40
50
40
100
10
10
10
10
10
1
1
1
1
1
mA
Case 2905 TO226AE (1WATT TO92) NPN

MPSW42
300
0.5
40
30
Case 2905 TO226AE (1WATT TO92) PNP

MPSW92
300
0.5
25
Case 2904 TO226AA (TO92) NPN

BF844
MPSA44
2N6517
BF393
MPSA42
2N5551
400
400
350
300
300
160
0.3
0.3
0.5
0.5
0.5
0.6
50
40
30
40
40
80
Case 2904 TO226AA (TO92) PNP

BF493S
2N6520
MPSA92
2N6519
2N5401
350
350
300
300
150
0.5
0.5
0.5
0.5
0.6
40
30
40
45
60
NPN
BF420
BF422
PNP
BF421
BF423
hFE @ IC
VCE(sat) @ IC & IB
f T @ IC
V(BR)CEO
Volts
Min
IC
Amp
Cont
Min
mA
Volts
Max
mA
mA
MHz
Min
mA
Style
300
250
0.5
0.5
50
50
25
25
2.0
2.0
20
20
2.0
2.0
60
60
10
10
14
14
Selector Guide
15

Table 6. PlasticEncapsulated RF Transistors
The RF transistors are designed for smallsignal amplification from RF to VHF/UHF frequencies. They are also used as
mixers and oscillators in the same frequency ranges.
Device
Type
V(BR)CEO
Volts
Min
hFE @ IC
IC
mA
Max
Min
fT
MHz
Typ
CRE/CRB
pF
Max
NF
dB
Typ
f
MHz
Style
2.5
2.5
3.0
6.0(3)
6.0(3)
5.0(3)
6.0(3)
100
35
200
200
60
200
60
21
2
2
21
21
2
1
1
1
mA
VCE
V
7.0
4.0
4.0
7.0
20
5.0
8.0
3.0
8.0
10
10
10
10
10
10
10
1.0
10
600
650(2)
650(2)
750
600(2)
800(2)
600(2)
2000(3)
800
0.28
0.9
0.65
0.35
0.65
0.9
1.7
1.7
5.0
10
600(2)
0.85

BF224
MPSH11
MPSH10
BF199
BF959
MPSH17
MPS918
MPS5179
MPS3563
30
25
25
25
20
15
15
12
12
50
100
100
50
50
50
30
60
60
40
40
25
20
25
20

MPSH81
20
50
60
Table 7. PlasticEncapsulated HighSpeed Saturated Switching Transistors

ton & toff @ IC
Device
Type
ns
Max
ns
Max
mA
V(BR)CEO
Volts
Min
hFE @ IC
VCE(sat) @ IC & IB
fT @ IC
Min
mA
Volts
Max
mA
mA
MHz
Min
mA
Style
40
30
40
10
30
10
0.22
0.2
0.2
10
30
10
1.0
3.0
1.0
300
350
10
30
1
1
1

2N4264
MPS3646
MPS2369A
25
18
12
35
28
18
10
300
10
15
15
15
(2) Min
(3) Max
(9) AGC Capable
Selector Guide
16

Table 8. PlasticEncapsulated Choppers
Devices are listed in decreasing V(BR)EBO.
Device
Type
V(BR)EBO
Volts
Min
IC
Amp(1)
Max
hFE @ IC
Min
VCE(sat) @ IC & IB
f T @ IC
mA
Volts
Max
mA
mA
MHz
Min
mA
Style
5.0
0.25
10
1.0
80
5.0
12
0.2
24
1.0

MPSA17
15
100
200

MPS404A
25
150
30
Table 9. PlasticEncapsulated Telecom Transistors

These devices are special product ranges intended for use in telecom applications.
Device
Type
V(BR)CEO
Volts
PD mW
25C
Amb
hFE @ IC @ VCE
fT
IC
mA
Cont
Min
Max
mA
Volts
MHz
Min
Style
600
75
10
10
300
17
600
100
10
10
200
17

P2N2222A
40
625

P2N2907A
60
625
(1) Typical
Selector Guide
17
PlasticEncapsulated
Multiple Transistors
The manufacturing trend has been toward printed circuit
board design with requirements for smaller packages with
more functions. In the case of discrete components the use
of the multiple device package helps to reduce board space
requirements and assembly costs.
Many of the most popular devices are offered in the standard plastic DIP and surface mount IC packages. This includes smallsignal NPN and PNP bipolar transistors,
Nchannel and Pchannel FETs, as well as diode arrays.
14
1
CASE 64606
(TO116)
STYLE 1
16
1
CASE 751B05
SO16
STYLE 4
Specification Tables
The following short form specifications include Quad and Dual transistors listed in alphanumeric order. Some columns
denote two different types of data indicated by either bold or italic typeface. See key and headings for proper identification.
This applies to Table 10 and 11 of this section only.
KEY
TYPE NO.
ID
Alphanumeric listing
type numbers
Identification Code
First Letter: Polarity
C both types in multiple device
N NPN
P PNP
Second Letter: Use
A General Purpose Amplifier
E Low Noise Audio Amplifier
F Low Noise RF Amplifier
G General Purpose Amplifier
and Switch
H Tuned RF/IF Amplifier
M Differential Amplifier
S High Speed Switch
D Darlington
Power Dissipation specified at 25C. Single

die rating.
Ref. Point: A Ambient Temperature
C Case Temperature
Selector Guide
18
hFE2
ton
ns
Max
toff
ns
Max
Unit
Subscript
PD
Watts
One
Die
Only
VBE
mV
Max
hFE1
Ref. Point
VCE
Volts
IC
Amp
Max
hFE @ IC
Min
fT
MHz
Min
Commonemitter
DC Current Gain.
Units for test Current:
A ampere
m mA
u A
CurrentGainBandwidth
Product
Continuous (DC) Collector Current
Rated Minimum CollectorEmitter Voltage

Subscript letter identifies base termination
listed below in order of preference.
SUBSCRIPT:
0 VCEO, open
Cob
pF
Max
Gp
dB
Min
VCE @
(sat)
Volts
Max
NF @
dB
Max
IC
& IC
Unit
IB
Gp Power Gain
NF Noise Figure
f Test Frequency
AUD 1015 kHz
Frequency Units:
H Hertz M MHz
K kHz
G GHz
VCE(sat) CollectorEmitter
Saturation Voltage
IC Test Current
Current Units: u A
m mA
A Amp
hFE1/hFE2 Current Gain Ratio
VBE Differential Base Voltage |VBE1 VBE2|.
Differential Amplifiers
ton turnon time
toff turnoff time
Output Capacitance, commonbase. Shown without distinction:

Ccb CollectorBase Capacitance
Cre CommonEmitter Reverse Transfer Capacitance
PlasticEncapsulated Multiple Transistors (continued)

Table 10. PlasticEncapsulated Multiple Transistors Quad
The following table is a listing of the most popular multiple devices available in the plastic DIP package. These devices are
available in NPN, PNP, and NPN/PNP configurations. (See note.)
hFE2
VBE
mV
Max
ton
ns
Max
toff
ns
Max
8.0
4.0
35(1)
9.0(1)
285(1)
15(1)
0.3
0.25
10
10
3.0(1)
2.0(1)
8.0
25
10
15
4.0
4.0
4.0
4.5
8.0
8.0
4.0
8.0
8.0
4.0
4.5
4.5
5.0
5.0
6.0
5.0
45(1)
40
35
50
180(1)
90
60
120
0.4
0.5
0.45
0.55
10
10
10
10
3.0(1)
2.0(1)
37(1)
43(1)
30(1)
30(1)
136(1)
155(1)
225(1)
225(1)
0.2
0.25
0.4
0.4
10
10
10
10
4.0(1)
30(1)
0.8
225(1)
20
45
150
1.5
0.4
0.25
0.25
0.15
0.5
0.5
0.7
0.5
10
10
10
10
10
10
10
10
10
hFE1
Device
ID
PD
Watts
One
Die
Only
VCEO
Volts
0.65
0.5
0.625
0.625
0.65
0.75
1.0
0.75
0.625
0.625
0.5
0.5
0.65
0.65
0.5
0.5
0.65
0.5
0.5
0.75
0.75
0.75
0.75
0.75
40
15
40
40
60
40
40
40
40
60
40
40
30
30
45
30
30
45
40
40
250
200
150
250
IC
Amp
Max
hFE @ IC
Min
fT
MHz
Min
Cob
pF
Max
NF @
dB
Max
Typ(1)
Gp
dB
Min
VCE
(sat)
Volts
Max
IC
IC
IB
Case 64606 TO116

MPQ2222A
MPQ2369
MPQ2483
MPQ2484
MPQ2907A
MPQ3467
MPQ3725
MPQ3762
MPQ3798
MPQ3799
MPQ3904
MPQ3906
MPQ6001
MPQ6002
MPQ6100A
MPQ6426
MPQ6502
MPQ6600A1
MPQ6700
MPQ6842
MPQ7043
MPQ7042
MPQ7051
MPQ7093
NA
NS
NA
NA
PA
PS
NS
PS
PA
PA
NG
PG
CG
CG
CA
ND
CG
CA
CA
CA
NA
NA
CG
PA
0.5
0.5
0.05
0.05
0.6
1.0
1.0
1.5
0.05
0.05
0.2
0.2
0.5
0.5
0.05
0.5
0.5
0.05
0.2
0.5
0.5
0.5
0.5
0.5
100
40
150
300
100
20
25
35
150
300
75
75
40
100
150
10K
100
150
70
70
25
25
25
25
150 m
10 m
1.0 m
1.0 m
150 m
500 m
500 m
150 m
0.1 m
0.1 m
10 m
10 m
150 m
150 m
1.0 m
100 m
150 m
1.0 m
10 m
10 m
1.0 m
1.0 m
1.0 m
1.0 m
200
450
50
50
200
125
250
150
60
60
250
200
200
200
50
125
200
50
200
300
50
50
50
50
150 m
10 m
AUD
AUD
150 m
500 m
500 m
500 m
AUD
AUD
10 m
10 m
150 m
150 m
AUD
100 m
150 m
1.0 m
1.0 m
0.5 m
20 m
20 m
20 m
20 m
Table 11. PlasticEncapsulated Multiple Transistors Quad Surface Mount

The following table is a listing of the most popular multiple devices available in the plastic SOIC surface mount package.
These devices are available in NPN, PNP, and NPN/PNP configurations.
hFE @ IC
Device
fT @ IC
V(BR)CEO
V(BR)CBO
Min
mA
MHz Min
mA
40
15
50
40
40
40
40
40
75
40
60
40
60
60
40
40
40
20
50
20
25
75
75
70
500
100
500
500
500
10
10
10
200
450
200
125
250
250
200
200
20
10
50
50
50
10
10
10
Case 751B05 SO16

MMPQ2222A
MMPQ2369
MMPQ2907A
MMPQ3467
MMPQ3725
MMPQ3904
MMPQ3906
MMPQ6700 (12)
(1) Typical
(12) NPN/PNP
NOTE: Some columns show 2 different types of data indicated by either bold or italic typefaces. See key and headings.
Selector Guide
19
PlasticEncapsulated
Surface Mount Transistors
1
This section of the selector guide lists the smallsignal plastic

devices that are available for surface mount applications.
These devices are encapsulated with the latest
stateoftheart mold compounds that enhance reliability and
exhibit excellent performance in high temperature and high
humidity environments. This package offers higher power
dissipation capability for smallsignal applications.
CASE 31808
TO236AB
SOT23
CASE 318D04
SC59
3
1
1
2
CASE 41902
SC70/SOT323
CASE 318E04
SOT223
3
4
3
CASE 419B01
SOT363
CASE 46301
SOT416/SC90
Table 12. PlasticEncapsulated Surface Mount GeneralPurpose Transistors

The following tables are a listing of smallsignal generalpurpose transistors in the SOT23, SC59, SOT223, SC70,
SC90, and SOT363 surface mount packages. These devices are intended for smallsignal amplification for DC, audio,
and lower RF frequencies. They also have applications as oscillators and generalpurpose, low voltage switches.
Pinout: 1Base, 2Emitter, 3Collector
Devices are listed in order of descending breakdown voltage.
hFE @ IC
Device
Marking
V(BR)CEO
Min
Max
mA
fT
MHz Min
110
200
100
160
250
110
200
420
100
100
100
110
200
420
220
450
250
400
600
220
450
800
300
300
300
220
450
800
2.0
2.0
100
100
100
2.0
2.0
2.0
150
10
150
2.0
2.0
2.0
100
100
200
200
200
100
100
100
200
300
250
100
100
100
125
220
100
100
160
250
125
220
100
100
125
220
420
250
475
300
250
400
600
250
475
300
300
250
475
800
2.0
2.0
150
100
100
100
2.0
2.0
10
150
2.0
2.0
2.0
100
100
200
200
200
200
100
100
250
200
100
100
100
Case 31808 TO236AB (SOT23) NPN

BC846ALT1
BC846BLT1
BC81716LT1
BC81725LT1
BC81740LT1
BC847ALT1
BC847BLT1
BC847CLT1
MMBT2222ALT1
MMBT3904LT1
MMBT4401LT1
BC848ALT1
BC848BLT1
BC848CLT1
1A
1B
6A
6B
6C
1E
1F
1G
1P
1AM
2X
1J
1K
1L
65
65
45
45
45
45
45
45
40
40
40
30
30
30
Case 31808 TO236AB (SOT23) PNP

BC856ALT1
BC856BLT1
MMBT2907ALT1
BC80716LT1
BC80725LT1
BC80740LT1
BC857ALT1
BC857BLT1
MMBT3906LT1
MMBT4403LT1
BC858ALT1
BC858BLT1
BC858CLT1
3A
3B
2F
5A
5B
5C
3E
3F
2A
2T
3J
3K
3L
65
65
60
45
45
45
45
45
40
40
30
30
30
Selector Guide
110
PlasticEncapsulated Surface Mount Transistors (continued)

Table 12. PlasticEncapsulated Surface Mount GeneralPurpose Transistors (continued)
hFE @ IC
Device
Marking
V(BR)CEO
Min
Max
mA
fT
MHz Min
25
25
25
20
210
290
120
200
340
460
240
350
2.0
2.0
150
500
150(1)
150(1)
200(1)
200(1)
25
25
210
120
340
240
2.0
150
100(1)
200(1)
45
45
45
65
65
45
45
45
30
30
30
40
40
20
50
100
160
250
110
200
110
200
420
110
200
420
100
100
70
210
600
400
600
220
450
220
450
800
220
450
800
300
300
140
340
100
100
100
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
150
10
1.0
2.0
100
100
100
100
100
100
100
100
300
300
150
45
45
65
65
45
45
30
30
30
60
40
45
160
250
125
220
125
220
110
200
420
100
100
210
400
600
250
475
250
475
220
450
800
300
300
340
100
100
2.0
2.0
2.0
2.0
2.0
2.0
2.0
150
10
2.0
100
100
100
100
100
100
100
200
250
40
40
100
100
300
300
10
10
300
300
40
40
100
100
300
300
10
10
250
250
Case 318D04 SC59 NPN

MSD601RT1
MSD601ST1
MSD602RT1
MSD1328RT1
YR
YS
WR
1DR
Case 318D04 SC59 PNP

MSB709RT1
MSB710RT1
AR
CR
Case 41902 SC70/SOT323 NPN

BC818WT1
BC81825WT1
BC81840WT1
BC846AWT1
BC846BWT1
BC847AWT1
BC847BWT1
BC847CWT1
BC848AWT1
BC848BWT1
BC848CWT1
MMBT2222AWT1
MMBT3904WT1
MSC3930BT1
MSD1819ART1
6I
6F
6G
1A
1B
1E
1F
1G
1J
1K
1L
1P
AM
VB
ZR
Case 41902 SC70/SOT323 PNP

BC80825WT1
BC80840WT1
BC856AWT1
BC856BWT1
BC857AWT1
BC857BWT1
BC858AWT1
BC858BWT1
BC858CWT1
MMBT2907AWT1
MMBT3906WT1
MSB1218ART1
5F
6F
3A
3B
3E
3F
3J
3K
3L
20
2A
BR
Case 419B01 SOT363 Dual NPN

MBT3904DW1T1
MBT3904DW9T1
MA
MB
Case 419B01 SOT363 Dual PNP

MBT3906DW1T1
MBT3906DW9T1
A2
A3
(1) Typical
Selector Guide
111
C
(OUT)
R1
B
(IN)
R2
E
(GND)
Table 12. PlasticEncapsulated Surface Mount GeneralPurpose Transistors (continued)

hFE @ IC
Device
Marking
V(BR)CEO
Min
Max
mA
fT
MHz Min
Case 419B01 SOT363 Dual Combination NPN and PNP

MBT3946DW1T1
46
40
100
300
10
250
50
120
560
1.0
180
50
120
560
1.0
140
Case 46301 SOT416/SC90 NPN

2SC4617
B9
Case 46301 SOT416/SC90 PNP

2SA1774
F9
Table 13. PlasticEncapsulated Surface Mount Bias Resistor Transistors

Table 13. for General Purpose Applications
These devices include bias resistors on the semiconductor chip with the transistor. See the BRT diagram for orientation
of resistors.
NPN
NPN
PNP
8A
8B
8C
8D
8E
8F
8G
8H
8J
8K
8L
6A
6B
6C
6D
6E
6F
6G
6H
6J
6K
6L
50
50
50
50
50
50
50
50
50
50
50
35
60
80
80
160
160
3.0
8.0
15
80
80
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
100
100
100
100
100
100
100
100
100
100
100
10K
22K
47K
10K
10K
4.7K
1.0K
2.2K
4.7K
4.7K
22K
10K
22K
47K
47K
1.0K
2.2K
4.7K
47K
47K
A6A
A6B
A6C
A6D
A6E
A6F
A6G
A6H
A6J
A6K
A6L
50
50
50
50
50
50
50
50
50
50
50
35
60
80
80
160
160
3.0
8.0
15
80
80
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
100
100
100
100
100
100
100
100
100
100
100
10K
22K
47K
10K
10K
4.7K
1.0K
2.2K
4.7K
4.7K
22K
10K
22K
47K
47K
1.0K
2.2K
4.7K
47K
47K
Marking
PNP
hFE@ IC
V(BR)CEO
Volts
(Min)
Device
Min
mA
IC
mA
Max
R1
Ohm
R2
Ohm
Case 318D04 SC59

MUN2211T1
MUN2212T1
MUN2213T1
MUN2214T1
MUN2215T1
MUN2216T1
MUN2230T1
MUN2231T1
MUN2232T1
MUN2233T1
MUN2234T1
MUN2111T1
MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1
MUN2116T1
MUN2130T1
MUN2131T1
MUN2132T1
MUN2133T1
MUN2134T1
Case 31808 TO236AB (SOT23)

MMUN2211LT1
MMUN2212LT1
MMUN2213LT1
MMUN2214LT1
MMUN2215LT1
MMUN2216LT1
MMUN2230LT1
MMUN2231LT1
MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
MMUN2111LT1
MMUN2112LT1
MMUN2113LT1
MMUN2114LT1
MMUN2115LT1
MMUN2116LT1
MMUN2130LT1
MMUN2131LT1
MMUN2132LT1
MMUN2133LT1
MMUN2134LT1
A8A
A8B
A8C
A8D
A8E
A8F
A8G
A8H
A8J
A8K
A8L
Selector Guide
112

Table 13. PlasticEncapsulated Surface Mount Bias Resistor Transistors
for General Purpose Applications (continued)
NPN
NPN
PNP
8A
8B
8C
8D
8E
8F
8G
8H
8J
8K
8L
6A
6B
6C
6D
6E
6F
6G
6H
6J
6K
6L
50
50
50
50
50
50
50
50
50
50
50
35
60
80
80
160
160
3.0
8.0
15
80
80
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
50
50
50
50
50
50
50
50
50
50
50
10K
22K
47K
10K
10K
4.7K
1.0K
2.2K
4.7K
4.7K
22K
10K
22K
47K
47K
1.0K
2.2K
4.7K
47K
47K
7A
7B
7C
7D
7E
7F
7G
7H
7J
7K
7L
7M
8A
8B
8C
8D
8E
8F
8G
8H
8J
8K
8L
8M
50
50
50
50
50
50
50
50
50
50
50
50
35
60
80
80
160
160
3.0
8.0
15
80
80
80
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
100
100
100
100
100
100
100
100
100
100
100
100
10K
22K
47K
10K
10K
4.7K
1.0K
2.2K
4.7K
4.7K
22K
2.2K
10K
22K
47K
47K
1.0K
2.2K
4.7K
47K
47K
47K
Marking
PNP
hFE@ IC
V(BR)CEO
Volts
(Min)
Device
Min
mA
IC
mA
Max
R1
Ohm
R2
Ohm
Case 41902 SC70/SOT323

MUN5211T1
MUN5212T1
MUN5213T1
MUN5214T1
MUN5215T1
MUN5216T1
MUN5230T1
MUN5231T1
MUN5232T1
MUN5233T1
MUN5234T1
MUN5111T1
MUN5112T1
MUN5113T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
Case 419B01 SOT363 Duals

MUN5211DW1T1
MUN5212DW1T1
MUN5213DW1T1
MUN5214DW1T1
MUN5215DW1T1
MUN5216DW1T1
MUN5230DW1T1
MUN5231DW1T1
MUN5232DW1T1
MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1
MUN5111DW1T1
MUN5112DW1T1
MUN5113DW1T1
MUN5114DW1T1
MUN5115DW1T1
MUN5116DW1T1
MUN5130DW1T1
MUN5131DW1T1
MUN5132DW1T1
MUN5133DW1T1
MUN5134DW1T1
MUN5135DW1T1
hFE @ IC
Device
Marking
V(BR)CEO
Min
mA
IC
mA
Max
R1
Ohm
R2
Ohm
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
100
100
100
100
100
100
100
100
100
100
100
100
10K
22K
47K
10K
10K
4.7K
1.0K
2.2K
4.7K
4.7K
22K
2.2K
10K
22K
47K
47K
1.0K
2.2K
4.7K
47K
47K
47K
Case 419B01 SOT363 Dual Combination NPN and PNP

MUN5311DW1T1
MUN5312DW1T1
MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
11
12
13
14
15
16
3X
31
32
33
34
35
50
50
50
50
50
50
50
50
50
50
50
50
NPN
PNP
V(BR)CEO
Volts
(Min)
94
69
59
43
50
50
50
Device
NPN
35
60
80
80
160
160
3.0
8.0
15
80
80
80
Marking
PNP
hFE@ IC
Min
100
80
15
mA
IC
mA
Max
R1
Ohm
R2
Ohm
1.0
5.0
5.0
100
100
100
10K
10K
4.7K
47K
4.7K
Case 46301 SOT416/SC90

DTC114TE
DTC114YE
DTA114YE
DTA143EE
Selector Guide
113

Table 14. PlasticEncapsulated Surface Mount Switching Transistors
The following tables are a listing of devices intended for highspeed, low saturation voltage, switching applications. These
devices have very fast switching times and low output capacitance for optimized switching performance.
hFE@ IC
Switching Time (ns)

Device
Marking
ton
toff
V(BR)CEO
Min
Max
mA
fT
MHz Min
18
18
18
15
15
12
20
20
40
120
100
100
10
400
35
12
20
50
500

MMBT2369LT1
MMBT2369ALT1
BSV52LT1
M1J
1JA
B2
12
12
12

MMBT3640LT1
2J
25
Table 15. PlasticEncapsulated Surface Mount VHF/UHF Amplifiers, Mixers, Oscillators

The following table is a listing of devices intended for smallsignal RF amplifier applications to VHF/UHF frequencies. These
devices may also be used as VHF/UHF oscillators and mixers.
Device
Marking
f T @ IC
V(BR)CEO
Ccb((13))
pF Max
GHz Min
mA
25
15
30
0.7
1.7(14)
0.45
0.65
0.6
0.4
4.0
4.0
8.0
20
15
0.85
0.35(13)
0.6
2.0
5.0
10
20
20
10
1.5(13)
1.5(13)
0.15
0.15
1.4
1.0
1.0
5.0
20
2.0(13)
0.15
1.0

MMBTH10LT1
MMBT918LT1
MMBTH24LT1
3EM
M3B
M3A

MMBTH81LT1
MMBTH69LT1
3D
M3J
Pinout: 1Emitter, 2Base, 3Collector

Case 318D04 SC59 NPN
MSC2295BT1
MSC2295CT1
MSC3130T1
VB
VC
1S
Case 318D04 SC59 PNP

MSA1022CT1
EC
(13) C
re
(14) C
ob
Selector Guide
114

Table 16. PlasticEncapsulated Surface Mount Choppers
The following table is a listing of smallsignal devices intended for chopper applications where a higher than normal
V(BR)CEO is required in the circuit application.
hFE @ IC
Device
Marking
V(BR)CEO
V(BR)EBO
Min
Max
mA
25
30
400
12

MMBT404ALT1
2N
35
Table 17. PlasticEncapsulated Surface Mount Darlingtons

The following table is a listing of smallsignal devices that have very high hFE and input impedance characteristics. These
devices utilize monolithic, cascade transistor construction.
Devices are listed in order of descending hFE.
Device
Marking
V(BR)CES
hFE @ IC
VCE(sat)
Volts Max
Min
Max
mA
1.5
1.5
20K
10K
100
100
1.5
20K
100

MMBTA14LT1
MMBTA13LT1
1N
1M
30
30

MMBTA64LT1
2V
30
Table 18. PlasticEncapsulated Surface Mount LowNoise Transistors

The following table is a listing of smallsignal devices intended for low noise applications in the audio range. These devices
exhibit good linearity and are candidates for hifi and instrumentation equipment.
Devices are listed in order of ascending NF.
Device
Marking
NF
dB Typ
hFE@ IC
V(BR)CEO
Min
Max
mA
fT
MHz Min
25
60
50
45
400
250
500
800
10
10
10
10
50
100
100
50
250
10
40

MMBT5089LT1
MMBT2484LT1
MMBT6428LT1
MMBT6429LT1
1R
1U
1KM
1L
2.0(15)
3.0(15)
3.0
3.0

MMBT5087LT1
2Q
2.0(15)
(15) Max
Selector Guide
115

Table 19. PlasticEncapsulated Surface Mount HighVoltage Transistors
The following table is a listing of smallsignal highvoltage devices designed for direct line operation requiring high voltage
breakdown and relatively low current capability.
hFE@ IC
Device
Marking
V(BR)CEO
Min
Max
mA
fT
MHz Min
15
40
30
100
30
50
40
50
100
15
25
50
100
30
50
40
50
100

MMBT6517LT1
MMBTA42LT1
MMBT5551LT1
1Z
1D
G1
350
300
160

MMBT6520LT1
MMBTA92LT1
MMBT5401LT1
2Z
2D
2L
350
300
150
Table 20. PlasticEncapsulated Surface Mount Drivers

The following is a listing of smallsignal devices intended for medium voltage driver applications at fairly high current levels.
hFE@ IC
Device
Marking
V(BR)CEO
VCE(sat)
VBE(sat)
Min
Max
mA
0.25
0.15
100
20
100
10
0.25
0.25
0.90
30
100
25
100

MMBTA06LT1
BSS64LT1
1GM
AM
80
80

BSS63LT1
MMBTA56LT1
T1
2GM
100
80
The following devices are designed to conserve energy. They offer ultralow collector saturation voltage.
MMBT1010LT1
GLP
15
0.1
1.1
300
600
100
15
0.1
1.1
300
600
100
Case 31803 SC59 PNP

MSD1010T1
GLP
Table 21. PlasticEncapsulated Surface Mount General Purpose Amplifiers

Pinout: 1Base, 2Collector, 3Emitter, 4Collector
hFE@ IC
Device
Marking
V(BR)CEO
Min
Max
mA
BH
80
40
250
150
80
40
25
150
Case 318E04 SOT223 NPN

BCP56T1
Case 318E04 SOT223 PNP

Pinout: 1Gate, 2Drain, 3Source, 4Drain
BCP53T1
AH
Selector Guide
116

Table 22. PlasticEncapsulated Surface Mount Switching Transistors
hFE
Device
Marking
ton
toff
35
285
45
100
V(BR)CEO
fT
Min
Max
@ IC (mA)
Min (MHz)
40
100
300
20
300
60
100
300
50
200

PZT2222AT1
P1F

PZT2907AT1
P2F
Table 23. PlasticEncapsulated Surface Mount Darlingtons

Device
hFE
Marking
V(BR)CER
VCE(sat)
Max (V)
Min
Max
@ IC (mA)
AS3
P1N
80
30
1.3
1.5
2000
20k
500
100
BS3
P2V
90
30
1.3
1.5
2000
20k
500
100

BSP52T1
PZTA14T1

BSP62T1
PZTA64T1
Table 24. PlasticEncapsulated Surface Mount HighVoltage Transistors

hFE
Device
fT
Marking
V(BR)CEO
Min
Max
@ IC (mA)
Min (MHz)
SP19A
P1D
BF720
350
300
250
40
40
50
20
10
10
70
50
60
ZTA96
P2D
BSP16
BF721
450
300
300
250
50
40
30
50
150
150
10
10
10
10
50
50
15
60

BSP19AT1
PZTA42T1
BF720T1

PZTA96T1
PZTA92T1
BSP16T1
BF721T1
Table 25. PlasticEncapsulated Surface Mount High Current Transistors

Device
hFE@ IC
Marking
V(BR)CEO
VCE(sat)
Volts
651
CA
60
20
0.5
0.5
75
60
1000
1000
ZT751
CE
60
20
0.5
0.5
75
60
1000
1000
Min
Max
mA

PZT651T1
BCP68T1

PZT751T1
BCP69T1
Selector Guide
117
FieldEffect Transistors
JFETs
JFETs operate in the depletion mode. They are available in
both P and Nchannel and are offered in both Throughhole
and Surface Mount packages. Applications include general
purpose amplifiers, switches and choppers, and RF amplifiers
and mixers. These devices are economical and very
rugged. The drain and source are interchangeable on many
typical FETs.
CASE 2904
TO226AA
(TO92)
23
Table 26. JFET LowFrequency/LowNoise

The following table is a listing of smallsignal JFETs intended for lownoise applications in the audio range. These devices
exhibit good linearity and are candidates for hifi and instrumentation equipment.
Re Yfs
mmho
Min
Device
@f
Re Yos @ f
mho
Max
kHz
kHz
IDSS
mA
VGS(off)
Volts
Crss
pF
Max
V(BR)GSS
V(BR)GDO
Volts
Min
Min
Max
Min
Max
Style
7.0
7.0
3.0
3.0
40
25
25
0.8
0.5
1.0
4.0
6.0
7.0
0.9
1.0
2.0
4.5
5.0
9.0
5
5
5
7.0
7.0
7.0
2.0
2.0
2.0
40
40
40
0.75
1.0
1.8
6.0
7.5
9.0
1.0
2.0
4.0
5.0
9.0
16
7
7
7
Ciss
pF
Max
Case 2904 TO226AA (TO92) NChannel

J202
2N5457
2N5458
1.0
1.5
1.0
1.0
50
50
1.0
1.0
Case 2904 TO226AA (TO92) PChannel

2N5460
2N5461
2N5462
1.0
1.5
2.0
1.0
1.0
1.0
75
75
75
1.0
1.0
1.0
Table 27. JFET HighFrequency Amplifiers

The following is a listing of smallsignal JFETs that are intended for hifrequency applications. These are candidates for
VHF/UHF oscillators, mixers and frontend amplifiers.
Re Yfs @ f
Device
mmho
Min
MHz
Re Yos @ f
mho
Max
MHz
Ciss
pF
Max
Crss
pF
Max
dB
Max
f
MHz
V(BR)GSS
V(BR)GDO
Volts
Min
3.0
4.0
4.0
1.5(1)
1.5(1)
1.5(1)
100
400
400
100
100
100
25
25
25
25
25
25
25
NF @ RG = 1K
VGS(off)
Volts
IDSS
mA
Min
Max
Min
Max
Style
0.3
0.5
2.0
1.0
1.0
2.0
8.0
3.0
4.0
6.0
6.5
4.0
6.5
2.0
1.0
4.0
8.0
12
12
24
20
5.0
10
20
60
30
60
5
5
5
5
5
5
5

MPF102
2N5484
2N5485
2N5486
J308
J309
J310
1.6
2.5
3.0
3.5
12(1)
12(1)
12(1)
100
100
400
400
100
100
100
200
75
100
100
250(1)
250(1)
250(1)
100
100
400
400
100
100
100
7.0
5.0
5.0
5.0
7.5
7.5
7.5
3.0
1.0
1.0
1.0
2.5
2.5
2.5
(1) Typical
Selector Guide
118
JFETs (continued)
Table 28. JFET Switches and Choppers
The following is a listing of JFETs intended for switching and chopper applications.
RDS(on) @ ID
Device
Max
mA
VGS(off)
Volts
Min
Max
IDSS
mA
Min
Max
V(BR)GSS
V(BR)GDO
Volts
Min
5.0
25
25
5.0
5.0
15
10
75
30
35
30
30
30
30
25
25
Ciss
pF
Max
Crss
pF
Max
ton
ns
Max
toff
ns
Max
Style
28
10
10
10
10
5.0
5.0
3.5
4.0
3.5
4.0
1.2
15
15
18
10
35
55
45
25
5
5
5
5
5
5
5

J112
MPF4392
2N5639
MPF4393
2N5640
2N5555
J110
50
60
60
100
100
150
18
1.0
1.0
1.0
0.5
5.0
(8.0)(1)
(12)(1)
(6.0)(1)
1.0(16)
4.0
(1) Typical
(16) V
GS(f)
Selector Guide
119
CASE 2905
TO226AE
1WATT (TO92)
TMOS FETs
1
3
D
CASE 2904
TO226AA
(TO92)
2 3
G
S
Table 29. TMOS Switches and Choppers

The following is a listing of smallsignal TMOS devices that are intended for switching and chopper applications. These
devices offer low RDS(on) characteristics.
VGS(th)
Volts
RDS(on) @ ID
Device
Max
Min
Max
V(BR)DSS
Volts
Min
Ciss
pF
Max
Crss
pF
Max
ton
ns
Max
toff
ns
Max
Style
15
15
5.0
15
5.0
5.0
10
22
22
22
22
22
22
22
22
30
10
10
10
23
15
20
10
23
15
22
22
30
22
22
30
22
22
22
30
Case 2905 TO226AE (1WATT TO92) NChannel

MPF930
MPF960
MPF6659
MPF990
MPF6660
MPF6661
MPF910
VN10LM
1.4
1.7
1.8
2.0
3.0
4.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
0.5
0.5
1.0
1.0
0.8
1.0
0.8
0.8
0.3
0.8
3.5
3.5
2.0
3.5
2.0
2.0
2.5
2.5
35
60
35
90
60
90
60
60
70(1)
70(1)
30(1)
70(1)
30(1)
30(1)
20(1)
20(1)
4(1)
20(1)
4(1)
4(1)
60
5.0
15
15
5.0
15
5.0
5.0
10
2.5
3.0
3.0
2.5
2.0
3.0
2.5
2.5
2.0
3.0
60
60
60
60
240
200
60
60
240
200
100
60
25(1)
60
125
60(1)
50
60
125
60(1)
25
5.0
3.0(1)
5.0
20
6.0(1)
5.0
5.0
20
6.0(1)
30
10
10
10
8.0
15
20
10
8.0
15

VN0300L
2N7000
BS170
VN0610LL
VN2406L
BS107A
2N7008
VN2222LL
VN2410L
BS107
1.2
5.0
5.0
5.0
6.0
6.4
7.5
7.5
10
14
1.0
0.5
0.2
0.5
0.5
0.25
0.5
0.5
0.5
0.2
0.8
0.8
0.8
0.8
0.8
1.0
1.0
0.6
0.8
1.0
(1) Typical
Selector Guide
120
Surface Mount FETs
This section contains the FET plastic packages available for

surface mount applications. Most of these devices are the
most popular metalcan and insertion type parts carried over
to the new surface mount packages.
CASE 31808
TO236AB
SOT23
1
2
CASE 41902
SC70/SOT323
4
4
3
CASE 419B01
SOT363
1
CASE 318E04
SOT223
Table 30. Surface Mount RF JFETs

The following is a list of surface mount FETs which are intended for VHF/UHF RF amplifier applications.
Pinout: 1Drain, 2Source, 3Gate
NF
Device
Marking
dB
Typ
Yfs @ VDS
f
MHz
mmhos
Min
mmhos
Max
Volts
V(BR)GSS
Style
450
450
450
100
100
10
8.0
10
4.5
3.0
20
18
18
7.5
6.0
10
10
10
15
15
25
25
25
30
25
10
10
10
10
10
100
4.5
7.5
15
30
Case 31808 TO236AB (SOT23) NChannel

MMBFJ309LT1
MMBFJ310LT1
MMBFU310LT1
MMBF4416LT1
MMBF5484LT1
6U
6T
M6C
M6A
M6B
1.5
1.5
1.5
2(3)
2.0
Case 419B01 SOT363 Dual NChannel

MBF4416DW1T1
M6
2.0
(3) Max
Table 31. Surface Mount GeneralPurpose JFETs

The following table is a listing of surface mount smallsignal general purpose FETs. These devices are intended for
smallsignal amplification for DC, audio, and lower RF frequencies. They also have applications as oscillators and
generalpurpose, lowvoltage switches.
Yfs @ VDS
Device
Marking
V(BR)GSS
mmhos
Min
IDSS
mmhos
Max
Volts
mA
Min
mA
Max
Style
5.0
15
1.0
5.0
10
1.0
4.0
15
1.0
5.0
10
1.0
5.0
15
1.0
5.0

MMBF5457LT1
6D
25
1.0
Case 31808 TO236AB (SOT23) PChannel

MMBF5460LT1
M6E
40
Case 419B01 SOT363 Dual NChannel

MBF5457DW1T1
6D
25
(3) Max
Selector Guide
121
Surface Mount FETs (continued)

Table 32. Surface Mount Choppers/Switches JFETs
The following is a listing of smallsignal surface mount JFET devices intended for switching and chopper applications.
Device
Marking
RDS(on)
Ohms
Max
toff
ns
Max
VGS(off)
IDSS
V(BR)GSS
Volts
Min
Volts
Max
mA
Min
mA
Max
Style
30
30
30
4.0
2.0
0.5
10
5.0
3.0
50
25
5.0
150
75
30
10
10
10
30
30
3.0
0.8
6.0
2.5
7.0
1.5
60
20
10
10

MMBF4391LT1
MMBF4392LT1
MMBF4393LT1
6J
6K
6G
30
60
100
20
35
50
Case 31808 TO236AB (SOT23) PChannel

MMBFJ175LT1
MMBFJ177LT1
6W
6Y
125
300
Table 33. TMOS FETs

The following is a listing of smallsignal surface mount TMOS FETs which exhibit low RDS(on) characteristics.
Pinout: 1Gate, 2Source, 3Drain
RDS(on) @ ID
Device
Marking
Ohm
mA
VGS(th)
Switching Time
VDSS
Volts
Min
Volts
Max
ton ns
toff ns
Style
60
100
50
60
20
20
30
0.8
0.8
0.5
1.0
1.0
1.0
1.0
3.0
2.8
1.5
2.5
2.4
2.4
2.4
10
20
20
20
2.5
2.5
2.5
10
40
20
20
15
16
16
21
21
21
21
21
21
21
50
20
20
20
1.0
1.0
1.0
0.7
2.4
2.0
2.4
1.2
2.5
2.5
2.5
2.5
16
16
16
15
21
21
21
21

MMBF170LT1
BSS123LT1
BSS138LT1
2N7002LT1
MMBF0201NLT1
MGSF1N02LT1
MGSF1N03LT1
6Z
SA
J1
702
N1
N2
N3
5.0
6.0
3.5
7.5
1.0
0.085
0.09
200
100
200
500
300
1200
1200
Case 31808 TO236 (SOT23) PChannel

BSS84LT1
MMBF0202PLT1
MGSF1P02LT1
MGSF1P02ELT1
PD
P3
PC
PE
6.0
1.4
0.35
0.16
100
200
1500
1500
Pinout: 1Gate, 2Drain, 3Source, 4Drain

RDS(on)
Device
Marking
Ohm
VGS(th)
Switching Time
mA
VDSS
Volts
Min
Volts
Max
ton ns
toff ns
Style
1000
1000
200
200
60
90
240
200
1.0
0.8
0.8
1.0
3.5
2.0
2.0
3.0
15
5.0
15
15
5.0
15
3
3
3
3
20
1.0
2.4
2.5
15
20
1.0
2.4
2.5
16
Case 318E04 SOT223 NChannel

MMFT960T1
MMFT6661T1
MMFT2406T1
MMFT107T1
FT960
T6661
T2406
FT107
1.7
4.0
10
14
Case 41902 SC70/SOT323 NChannel

MMBF2201NT1
N1
1.0
300
Case 41902 SC70/SOT323 PChannel

MMBF2202PT1
P3
2.2
200
Selector Guide
122
Tuning and Switching Diodes

CASE 2904
TO226AA
(TO92)
Tuning Diodes
Abrupt Junction
Motorola supplies voltagevariable capacitance diodes serving

the entire range of frequencies from HF through UHF. Used in RF
receivers and transmitters, they have a variety of applications,
including:
Phaselocked loop tuning systems
Local oscillator tuning
Tuned RF preselectors
RF filters
RF phase shifters
RF amplifiers
Automatic frequency control
Video filters and delay lines
Harmonic generators
FM modulators
Two families of devices are available: Abrupt Junction and Hyper
Abrupt Junction. The Abrupt Junction family includes devices
suitable for virtually all tunedcircuit and narrowrange tuning
applications throughout the spectrum.
3
2
STYLE 15
23
CASE 5102
DO204AA
(DO7)
2
STYLE 1
CASE 18202
TO226AC
(TO92)
2
Cathode
CASE 31808
TO236AB
SOT23
3
Cathode
1
Anode
STYLE 1
1
2
3
1
1
Anode
STYLE 8
3
1
1
CASE 46301
SOT416/SC90
Typical Characteristics
STYLE 9
Diode Capacitance versus Reverse Voltage

100
1000
50
C T , DIODE CAPACITANCE (pF)
70
1N5148
30
20
10
7
TA = 25C
f = 1 MHz
MV1638
1N5456A
MV1650
100
(See Tables 34
Thru 36)
10
MV1628
3
2
0.6
2
4 6
10
20
VR, REVERSE VOLTAGE (VOLTS)
40
60
MV2109
MMBV2109LT1
MV2115
100
10
MV2101
MMBV2101LT1
1
1
10
100
100
1000
0.1
0.1
MV2105
MMBV2105LT1
1
10
100
70
40
20
MMBV432LT1
MV104
TA = 25C
f = 1 MHz
EACH DIODE
10
0.3
(See Tables 37 and 38)
0.5
1
2
3
5
10
20
30
(See Table 39)
Selector Guide
123
Tuning Diodes Abrupt Junction (continued)

Table 34. GeneralPurpose Glass Abrupt Tuning Diodes
High Q Capacitance Ratio @ 4.0 Volts/60 Volts
The following is a listing of axial leaded, generalpurpose, abrupt tuning diodes. These devices exhibit high Q characteristics.
CT @ VR = 4.0 V, 1.0 MHz
Device(19)
pF
Min
pF
Nominal
pF
Max
V(BR)R
Volts
Cap Ratio
C4/C60
Min
Q
4.0 V, 50 MHz
Min
42.3
47
51.7
60
3.2
200
Case 5102 DO204AA (DO7)

1N5148

High Q Capacitance Ratio @ 2.0 Volts/30 Volts
The following is a listing of axial leaded, generalpurpose, abrupt tuning diodes. These devices exhibit very high Q
characteristics.
CT @ VR = 4.0 V, 1.0 MHz
Device(20)
pF
Min
pF
Nominal
pF
Max
VR(BR)R
Volts
Cap Ratio
C2/C30
Min
Q
4.0 V, 50 MHz
Min
16.2
19.8
90
18
22
100
19.8
24.2
110
30
30
30
2.6
2.6
2.7
350
350
175

1N5446ARL
1N5448ARL
1N5456A
(19)Suffix A = 10.0%
(20)Suffix B = 5.0%

Capacitance Ratio @ 2.0 Volts/20 Volts
The following is a listing of axial leaded, generalpurpose, abrupt tuning diodes. These devices exhibit high Q characteristics.
CT @ VR = 4.0 V, 1.0 MHz
Device
pF
Min
pF
Nominal
pF
Max
V(BR)R
Volts
Cap Ratio
C2/C20
Min
Q
4.0 V, 50 MHz
Typ
10.8
13.5
16.2
19.8
29.7
73.8
90
12
15
18
22
33
82
100
13.2
16.5
19.8
24.2
36.3
90.2
110
20
20
20
20
20
20
20
2.0
2.0
2.0
2.0
2.0
2.0
2.0
300
250
250
250
200
150
150

MV1626
MV1628
MV1630
MV1634
MV1638
MV1648
MV1650
Table 37. GeneralPurpose Plastic Abrupt Tuning Diodes

The following is a listing of plastic package, generalpurpose, abrupt tuning diodes. These devices exhibit high Q
characteristics.
CT @ VR = 4.0 V, 1.0 MHz
Device
pF
Min
pF
Nominal
pF
Max
VR(BR)R
Volts
Cap Ratio
C4/C30
Min
Q
4.0 V, 50 MHz
Typ
6.8
12
15
27
33
47
100
7.5
13.2
16.5
29.7
36.3
51.7
110
30
30
30
30
30
30
30
2.5
2.5
2.5
2.5
2.5
2.5
2.6
400
350
350
250
200
150
100
Case 18202 TO226AC (TO92) 2Lead

MV2101
MV2104
MV2105
MV2108
MV2109
MV2111
MV2115
Selector Guide
124
6.1
10.8
13.5
24.3
29.7
42.3
90
Tuning Diodes Abrupt Junction (continued)

Table 38. Surface Mount Abrupt Tuning Diodes
The following is a listing of surface mount abrupt junction tuning diodes intended for generalpurpose variable capacitance
circuit applications.
CT @ VR = 4.0 V, 1.0 MHz
Device
pF
pF
pF
Min
Nominal
Max
VR(BR)R
Volts
6.1
9.0
13.5
19.8
24.3
29.7
6.8
10
15
22
27
33
7.5
11
16.5
24.2
29.7
36.3
30
30
30
30
30
30
Cap Ratio
C2/C30
4.0 V, 50 MHz
Min
Typ
2.5
2.5
2.5
2.5
2.5
2.5
400
350
350
300
250
200
Case 31808 DO236AB (SOT23)

MMBV2101LT1
MMBV2103LT1
MMBV2105LT1
MMBV2107LT1
MMBV2108LT1
MMBV2109LT1
Table 39. Abrupt Tuning Diodes for FM Radio Dual

The following is a listing of abrupt tuning diodes that are available as dual units in a single package.
CT @ VR(22)
Device
pF
Min
pF
Max
42
Volts
Cap Ratio
C3/C30
Min
Q
3.0 V, 50 MHz
Min
V(BR)R
Volts
Device
Marking
Style
3.0
2.5
100
32
15
2.0
1.5(21)
100
14
M4B

MV104
37

MMBV432LT1
43
48.1
(21)C2/C8
(22)Each Diode
Selector Guide
125
Tuning Diodes
HyperAbrupt Junction
The HyperAbrupt family exhibits higher capacitance, and a

much larger capacitance ratio. It is particularly well suited for
widerrange applications such as AM/FM radio and TV tuning.
CASE 5102
DO204AA
(DO7)
1
Cathode
CASE 18202
TO226AC
(TO92)
2
Anode
CASE 31808
TO236AB
SOT23
3
Cathode
2
Anode
STYLE 1
1
Cathode
STYLE 1
3
1
1
Anode
STYLE 8
4
CASE 318E04
SOT223
1
2
2, 4
STYLE 2
Diode Capacitance versus Reverse Voltage
40
36
16
14
C T , CAPACITANCE (pF)
20
18
MMBV105GLT1
12
10
8
TA = 25C
f = 1 MHz
6
4
2
0
32
28
MMBV109LT1
MV209
24
20
16
12
8
4
0.3
0.5
10
20
30
10
30
Figure 1. Diode Capacitance
Selector Guide
126
100
Tuning Diodes HyperAbrupt Junction (continued)

10
9
40
32
MMBV409LT1
MV409
24
16
8
0
1
10
20
8
7
6
MMBV809LT1
5
4
3
2
1
0
0.5 1
50
36
32
28
40
MMBV3102LT1
24
20
16
12
TA = 25C
f = 1 MHz
8
4
0
0.3
3 4 5
8 10
15
0.5
10
20
40
f = 1 MHz
30
20
10
30
MMBV609LT1
10
20

Each Die
30
40
MV7005T1
1000
500
500
100
50
10
100
MV1405
50
30
20
MV1403
10
MV1404
1
Figure 7. Capacitance versus Reverse Voltage
TA = 25C
f = 1 MHz
300
200
MV7404T1
3
4
10
Figure 8. Diode Capacitance versus Reverse Voltage
Selector Guide
127
Tuning Diodes HyperAbrupt Junction (continued)

Table 40. HyperAbrupt Tuning Diodes for Telecommunications Single
The following is a listing of hyperabrupt tuning diodes intended for high frequency, FM radio, and TV tuner applications.
CT @ VR (f = 1.0 MHz)
Device
pF
Min
pF
Max
Cap Ratio @ VR
Q
50 MHz
Max
V(BR)R
Volts
Device
Marking
Case
Style
CV
Curve
Fig
Volts
Min
Max
Volts
3.0 V
Min
3.0
3.0
5.0
1.5
6.5
2.0
3/25
3/8
200
200
30
20
1
1
2
3
25
3.0
3.0
2.0
3.0
4.0
5.0
1.5
1.8
4.5
6.5
6.5
1.9
2.6
3/25
3/25
3/8
2/8
3/25
200
200
200
300
200
30
30
20
20
30
M4E
M4A
X5
5K
M4C
8
8
8
8
8
1
2
3
4
5
3.0
5.0
6.5
3/25
200
30
M4A
50 MHz
Max
V(BR)R
Volts
Device
Marking
Case
Style
CV
Curve
Fig
20
5L
Case 18202 TO226AC (TO92)

MV209
MV409
26
26
32
32

MMBV105GLT1
MMBV109LT1
MMBV409LT1
MMBV809LT1
MMBV3102LT1
1.5
26
26
4.5
20
2.8
32
32
6.1
25

MBV109T1
26
32
Table 41. HyperAbrupt Tuning Diodes for Communications Dual

CT @ VR (f = 1.0 MHz)
Device
pF
Min
pF
Max
Cap Ratio @ VR
Volts
Min
Max
Volts
3.0 V
Min
3.0
1.8
2.4
3/8
250

MMBV609LT1
26
32
Table 42. HyperAbrupt High Capacitance Voltage Variable Diode Surface Mount
The following are high capacitance voltage variable diodes intended for low frequency applications and circuits requiring
large tuning capacitance.
CT @ f = 1.0 MHz
Device
V(BR)R
Volts
IR
nA
Min
pF
Max
pF
Cap Ratio
Min
Q
Min
Style
CV
Curve
Figure
400
96
520
144
12(26)
10(27)
150(28)
200(29)
2
2
8
11
Case 318E04 SOT223

Pinout: 1Anode, 2, 4Cathode, 3NC
MV7005T1
MV7404T1
15
12
100
100
Table 43. HyperAbrupt High Capacitance Tuning Diodes Axial Lead Glass Package
CT @ VR
Device
pF
Min
pF
Max
144
210
300
Volts
Cap Ratio
C2/C10
Min
Q
2.0 V, 1.0 MHz
Min
V(BR)R
Volts
Style
CV
Curve
Figure
2.0
2.0
2.0
10
10
10
200
200
200
12
12
12
1
1
1
11
11
11

MV1404
MV1403
MV1405
96
140
200
(26) V = 1.0 V/V = 9.0 V

R
R
(27) V = 2.0 V/V = 10 V
R
R
(28) V = 1.0 V, f = 1.0 MHz
R
(29) V = 2.0 V, f = 1.0 MHz
R
Selector Guide
128
Schottky Diodes
CASE 18202
TO226AC
(TO92)
Schottky diodes are ideal for VHF and UHF mixer and detector
applications as well as many higher frequency applications.
They provide stable electrical characteristics by eliminating
the pointcontact diode presently used in many applications.
CASE 42504
SOD123
STYLE 1
STYLE 1
2
2
Cathode
1
Cathode
1
Anode
CASE 41902
SC70/SOT323
1
Single
3
2
Anode
CASE 419B01,
STYLE 6
SOT363
CASE 31808
TO236AB
SOT23
1
2
STYLE 8
STYLE 9
STYLE 11
3 1
21
Single
Series
3
Common Cathode
STYLE 19
STYLE 12
Cathode
1
Anode
3
2
Series
3
2
Cathode
Capacitance versus Reverse Voltage
2.8
TA = 25C
MBD101
MMBD101LT1
MMBD352LT1*
MMBD353LT1*
MMBD354LT1*
0.9
TA = 25C
2.4
0.8
0.7
2
MBD301,
MMBD301LT1
1.6
1.2
0.8
0.4
0.6
MBD701, MMBD701LT1
0
0
* EACH DIODE
10
15
20
25
30
35
40
45
50
(See Table 44)
Selector Guide
129
Schottky Diodes (continued)

Table 44. Schottky Diodes
The following is a listing of Schottky diodes that exhibit low forward voltage drop for improved circuit efficiency.
V(BR)R
Volts
Device
CT @ VR
pF
Max
VF @ 10 mA
Volts
Max
IR @ VR
nA
Max
Minority
Lifetime
pS (TYP)
Device
Marking
Style
1.0 @ 20 V
1.5 @ 15 V
1.0 @ 0 V
1.0
0.6
0.6
200 @ 35 V
200 @ 25 V
250 @ 3.0 V
15
15
1
1
1
0.5 @ 30 mA
0.5 @ 30 mA
0.75
0.4
0.4
0.4
1.0
0.6
0.6
1000 @ 25 V
1000 @ 25 V
100 @ 50 V
2000 @ 25 V
2000 @ 25 V
2000 @ 25 V
200 @ 35 V
200 @ 25 V
250 @ 3.0 V
15
15
15
B1
BE
LV3
LD3
5H
4T
4M
8
12
8
12
8
11
8
8
8

MBD701
MBD301
MBD101
70
30
7.0
Case 31808 TO236AB (SOT23) Single

BAS40LT1
BAS4004LT1
BAS70LT1
BAT54ALT1
BAT54LT1
BAT54SLT1
MMBD701LT1
MMBD301LT1
MMBD101LT1
40
40
70
30
30
30
70
30
7.0
5.0 @ 1.0 V
5.0 @ 1.0 V
2.0 @ 0 V
10 @ 1.0 V
10 @ 1.0 V
10 @ 1.0 V
1.0 @ 20 V
1.5 @ 15 V
1.0 @ 0 V
Case 31808 TO236AB (SOT23) Dual

BAS4006LT1
BAS7004LT1(23)
MMBD352LT1
MMBD353LT1
MMBD354LT1
MMBD355LT1
MMBD452LT1
40
70
7.0
7.0
7.0
7.0
30
5.0 @ 1.0 V
2.0 @ 0 V
1.0 @ 0 V
1.0 @ 0 V
1.0 @ 0 V
1.0 @ 0 V
1.5 @ 1.5 V
0.5 @ 30 mA
0.75
0.6
0.6
0.6
0.6
0.6
1000 @ 25 V
100 @ 50 V
250 @ 3.0 V
250 @ 3.0 V
250 @ 3.0 V
250 @ 3.0 V
200 @ 25 V
15
15
15
15
15
M5G
M4F
M6H
MJ1
5N
11
12
11
19
9
12
11
30
70
30
4
10 @ 1.0 V
1.0 @ 20 V
1.5 @ 15 V
1.0 @ 0 V
0.4
1.2
0.6
0.6
2000 @ 25 V
0.2 @ 35 V
0.2 @ 25 V
0.25 @ 3 V
15
15
15
5H
4T
4M
1
1
1
1
0.4
0.6
1.0
2000 @ 25 V
0.2 @ 25 V
0.2 @ 35 V
4T
5H
2
2
2
0.4
0.6
0.37 @ 1 mA
2000 @ 25 V
250 @ 3.0 V
0.2 @ 10 V
M5
B3
9
9
2
Case 42504 (SOD123)

BAT54T1
MMSD701T1
MMSD301T1
MMSD101T1
Case 41902 (SC70/SOT323) Single

BAT54WT1
MMBD330T1
MMBD770T1
30
30
70
10 @ 1.0 V
1.5 @ 15 V
1.0 @ 20 V
Case 41902 (SC70/SOT323) Dual

BAT54SWT1
MMBD352WT1
MMBD717LT1(23)
30
7.0
20
10 @ 1.0 V
1.0 @ 0 V
2.5 @ 1.0 V
(23) Common Anode
Case 419B01 SOT363 Duals

V(BR)R
Device
IR
VF
Marking
Min
Volts
@ IBR
(A)
Max
(A)
@ VR
Volts
Min
Volts
Max
Volts
@ IF
(mA)
CT((30))
Max
(pF)
trr
Max
(ns)
Case
Style
BL
M4
T4
H5
30
7.0
30
70
10
10
10
10
2.0
200
200
200
25
25
25
25
0.32
0.6
0.4
0.5
1.0
1.0
1.0
1.0
1.0
1.0
1.5
1.0
5.0
6
6
6
6
MBD54DWT1
MBD110DWT1
MBD330DWT1
MBD770DWT1
(30) V = 0 V, f = 1.0 MHz
R
Selector Guide
130
Switching
Diodes
Smallsignal switching diodes are intended for low current
switching and steering applications. HotCarrier, PIN and
generalpurpose diodes allow a wide selection for specific
application requirements.
CASE 2904
TO226AA
(TO92)
2
CASE 18202
TO226AC
(TO92)
1
2
3
STYLE 3
Capacitance versus Reverse Voltage
STYLE 1
3
10
2
Cathode
STYLE 4
TA = 25C
f = 1 MHz
1
Anode
2
3
MPN3404
CASE 31808
TO236AB
SOT23
1
1
0.5
0.3
0.2
MMBV3401LT1
20 V MAX VR
12
18
MPN3700
MMBV3700LT1
24
30
36
42
STYLE 8
48
54
STYLE 12
3
SINGLE
3
COMMON ANODE
(See Table 45)

STYLE 1
STYLE 18
STYLE 9
1
Cathode
2
Anode
3
COMMON CATHODE
CASE 42504
SOD123
STYLE 11
ANODE
3
3
SINGLE
CATHODE
3
STYLE 19
3
SERIES
3
SERIES
CASE 46301
SOT416/SC90
3
1
CATHODE
STYLE 4
CASE 318D04
SC59
2
ANODE
STYLE 5
2
1
STYLE 2
3
STYLE 2
1
SINGLE
2
3
COMMON CATHODE
SINGLE
SINGLE
STYLE 3
STYLE 5
2
STYLE 4
STYLE 5
1
CASE 41902
SC70/SOT323
STYLE 4
2
3
COMMON ANODE
2
3
COMMON CATHODE
2
3
COMMON ANODE
Selector Guide
131
Switching Diodes (continued)

Table 45. PIN Switching Diodes
The following PIN diodes are designed for VHF band switching and generalpurpose low current switching applications.
CT @ VR @ 1.0 MHz
V(BR)R
Volts
Min
Device
Series
Resistance
Ohm
Max
Device
Marking
Style
pF
Max
Volts
IR @ VR
A
Max
1.0
2.0
20
15
0.1 @ 150
0.1 @ 25 V
1.0 @ 10 mA
0.85 @ 10 mA
1
1
1.0
1.0
20
20
0.1 @ 150
0.1 @ 25 V
1.0 @ 10 mA
0.7 @ 10 mA
4R
4D
8
8

MPN3700
MPN3404
200
20

MMBV3700LT1
MMBV3401LT1
200
35
Table 46. GeneralPurpose Signal and Switching Diodes Single

The following is a listing of smallsignal switching diodes in surface mount packages. These diodes are intended for low
current switching and signal steering applications.
V(BR)R
Device
Marking
Min
Volts
@ IBR
(A)
IR
VF
CT(30)
trr
Max
(A)
@ VR
Volts
Min
Volts
Max
Volts
@ IF
(mA)
Max
(pF)
Max
(ns)
Case
Style

BAS21LT1
MMBD914LT1
BAS16LT1
MMBD6050LT1
BAL99LT1
JS
5D
A6
5A
JF
250
100
75
70
70
100
100
100
100
100
0.1
5.0
1.0
0.1
2.5
200
75
75
50
70
0.85
1.0
1.0
1.0
1.1
1.0
100
10
50
100
50
5.0
4.0
2.0
2.5
1.5
50
4.0
6.0
4.0
6.0
8
8
8
8
18
40
40
100
100
0.1
0.1
35
35
1.2
1.2
100
100
2.0
2.0
3.0
3.0
4
2
75
40
80
100
1.0
100
100
100
0.02
0.1
0.1
5.0
20
35
75
75
1.25
1.2
1.2
1.0
150
100
100
10
2.0
2.0
2.0
4.0
6.0
3.0
3.0
4.0
2
2
2
2
100
100
5.0
0.5
75
80
1.0
1.2
10
100
4.0
2.0
4.0
4.0
1
1
Case 318D04 SC59

M1MA151AT1
M1MA151KT1
MA
MH

BAS16WT1
M1MA141KT1
M1MA142KT1
M1MA174T1
A6
MH
MI
J6
Case 42504 SOD123

MMSD914T1
MMSD71RKT1
5D
6S
(30) V = 0 V, f = 1.0 MHz

R
Selector Guide
132

Table 47. GeneralPurpose Signal and Switching Diodes Dual
The following is a listing of smallsignal switching diodes in surface mount packages. These diodes are intended for low
current switching and signal steering applications.
V(BR)R
Device
Marking
Min
Volts
@ IBR
(A)
IR
VF
CT(30)
trr
Max
(A)
@ VR
Volts
Min
Volts
Max
Volts
@ IF
(mA)
Max
(pF)
Max
(ns)
Case
Style

MMBD7000LT1
MMBD2836LT1
MMBD2838LT1
BAV70LT1
BAV99LT1
BAW56LT1
MMBD6100LT1
BAV74LT1
MMBD2835LT1
MMBD2837LT1
M5C
A2
A6
A4
A7
A1
5BM
JA
A3
A5
100
75
75
70
70
70
70
50
35
35
100
100
100
100
100
100
100
5.0
100
100
1.0
0.1
0.1
5.0
2.5
2.5
0.1
0.1
0.1
0.1
50
50
50
70
70
70
50
50
30
30
0.75
0.85
1.1
1.0
1.0
1.0
1.0
1.0
1.1
1.0
1.0
1.0
100
10
10
50
50
50
100
100
10
10
1.5
4.0
4.0
1.5
1.5
2.0
2.5
2.0
4.0
4.0
4.0
4.0
4.0
6.0
4.0
6.0
4.0
4.0
4.0
4.0
11
12
9
9
11
12
9
9
12
9
40
40
100
100
0.1
0.1
35
35
1.2
1.2
100
100
15
2.0
10
3.0
5
3
100
100
100
100
100
100
100
100
0.1
0.1
2.5
5.0
2.5
2.5
0.1
0.1
75
75
70
70
70
70
35
35
1.2
1.2
1.0
1.0
1.0
1.0
1.2
1.2
100
100
50
50
50
50
100
100
2.0
15
2.0
1.5
1.5
1.5
2.0
15
3.0
10
6.0
6.0
6.0
6.0
3.0
10
5
4
4
5
9
10
5
4
70
1.2
100
3.5
4.0
70
1.2
100
3.5
4.0
CT(30)
trr
Case 318D04 SC59

M1MA151WAT1
M1MA151WKT1
MN
MT

M1MA142WKT1
M1MA142WAT1
BAW56WT1
BAV70WT1
BAV99WT1
BAV99RWT1
M1MA141WKT1
M1MA141WAT1
MU
MO
A1
A4
A7
F7
MT
MN
80
80
70
70
70
70
40
40
Case 46301 SOT416/SC90 (Common Anode)

DAP222
P9
80
100
100
Case 46301 SOT416/SC90 (Common Cathode)

DAN222
N9
80
100
100
Table 48. LowLeakage Medium Speed Switching Diodes Single

V(BR)R
Device
Marking
Min
Volts
@ IBR
(A)
IR
VF
Max
(nA)
@ VR
Volts
Min
Volts
Max
Volts
@ IF
(mA)
Max
(pF)
Max
(ns)
Case
Style
100
100
5.0
0.5
75
30
1.0
0.95
10
10
2.0
2.0
3000
3000
8
6
30
100
0.5
30
0.95
10
2.0
3000
30
100
0.5
30
0.95
10
2.0
3000
30
100
0.5
30
0.95
10
2.0
3000

BAS116LT1
MMBD1000LT1
JV
AY
75
30
Case 41902 (SOT323)/(SC70)

MMBD2000T1
DH
Case 318D04 (SC59)

MMBD3000T1
XP
Case 42504 (SOD123)

MMSD1000T1
4K
Selector Guide
133

Table 49. LowLeakage Medium Speed Switching Diodes Dual
V(BR)R
Device
Marking
Min
Volts
@ IBR
(A)
IR
VF
CT(30)
trr
Max
(nA)
@ VR
Volts
Min
Volts
Max
Volts
@ IF
(mA)
Max
(pF)
Max
(ns)
Case
Style
5.0
5.0
5.0
0.5
0.5
70
70
70
30
30
1.0
1.0
1.0
0.95
0.95
10
10
10
10
10
2.0
2.0
2.0
2.0
2.0
3000
3000
3000
3000
3000
9
11
12
12
9
100
100
0.5
0.5
30
30
0.95
0.95
10
10
2.0
2.0
3000
3000
4
5
100
100
0.5
0.5
30
30
0.95
0.95
10
10
2.0
2.0
3000
3000
5
3

BAV170LT1
BAV199LT1
BAW156LT1
MMBD1005LT1
MMBD1010LT1
JX
JY
JZ
A3
A5
70
70
70
30
30
100
100
100
100
100
Case 41902 (SOT323)/(SC70) DUAL

MMBD2005T1
MMBD2010T1
DI
DP
30
30
Case 318D04 (SC59) DUAL

MMBD3005T1
MMBD3010T1
XQ
XS
30
30
(30) V = 0 V, f = 1.0 MHz

R
Selector Guide
134
Multiple
Switching Diodes
Multiple diode configurations utilize monolithic structures fabricated by the planar process. They are designed to satisfy fast
switching requirements as in core driver and encoding/decoding applications where their monolithic configurations offer lower cost,
higher reliability and space savings.
14
16
1
CASE 751A03
SO14
PLASTIC
CASE 751B05
SO16
PLASTIC
Diode Array Diagrams

1
11
Dual 10
Diode
Array
3
8
10 13 14
12
7
2
11 12
11 12
14
Dual 8
Diode
Array
11 12
10 11 12 13 14
10
7
NC Pin 6, 13
6
1
14
8
2
14
2
5
1
NC Pin 4,6,10,13
8 Diode
Array
(Common
Cathode)
Isolated
7 Diode
Array
NC Pin 1, 4, 6, 10, 13
2
1
16
Diode
Array
14
8 Diode
Array
(Common
Anode)
11 12
NC Pin 1, 4, 6, 10, 13
Isolated
8 Diode
Array
16 15 14 13 12 11 12
Table 50. Diode Arrays

Case 751A03 SO14
MMAD130
MMAD1103
MMAD1105
MMAD1106
MMAD1107
MMAD1109
Dual 10 Diode Array

16 Diode Array
8 Diode Common Cathode Array
8 Diode Common Anode Array
Dual 8 Diode Array
7 Isolated Diode Array
1
2
3
4
5
7
8 Isolated Diode Array
Case 751B05 SO16

MMAD1108
Selector Guide
135
CASE 31808
TO236AB
SOT23
6
1
Energy. Its something Motorola is putting a lot of energy

into helping save. Thats why were introducing our GreenLine portfolio of devices, featuring energyconserving traits
superior to those of our existing line of standard parts for the
same usage. GreenLine devices can actually help reduce
the power demands of your products.
PlasticEncapsulated
Surface Mount Devices
CASE 318D04
SC59
CASE 318E04
SOT223
3
4
2
CASE 318G02
TSOP6
CASE 41902
SC70/SOT323
CASE 42504
SOD123
Small Signal HDTMOS: These devices provide our

lowest ever drainsource resistance versus package size.
Lower rDS(on) means less wasted energy through dissipation
loss, making them especially effective for lowcurrent
applications where energy conservation is crucial, such as low
current switchmode power supplies, uninterruptable power
supplies (UPS), power management systems, and bias
switching. This makes them ideal for portable computertype
products or any system where the combination of power
management and energy conservation is key.
Wide Range of Applications

Currently, our portfolio consists of three families.
LowLeakage Switching Diodes: With reverse leakage
specifications guaranteed to 500 pA, they help extend battery
life, making them ideal for small batteryoperated systems in
which standby power is essential. Applications include ESD
protection, reverse voltage protection, and steering logic.
Save Energy Save Money

In an increasingly powerhungry world, Motorolas GreenLine portfolio makes powerful sense. So much sense that we
plan to continue adding devices to the portfolio. Chances
are, there are Motorola GreenLine devices applicable to one
or more of your products ones that can help save energy,
dollars and the environment.
Bipolar Output Driver Transistors: Offering ultralow

collector saturation voltage, they deliver more energy to the
intended load with less power wasted through dissipation loss.
They are especially effective in todays lower voltage
batterypowered applications, and prolong battery life in
portable and handheld communications and personal digital
equipment.
Table 51. Bipolar Driver Transistor PNP

These offer ultralow collector saturation voltage.
hFE@ IC
Device Type
MMBT1010LT1
MSD1010T1
Selector Guide
136
Marking
Case
V(BR)CEO
VCE(sat)
VBE(sat)
Min
Max
mA
GLP
GLP
SOT23
SC59
15
15
0.1
0.1
1.1
1.1
300
300
600
600
100
100
GreenLine (continued)
Table 52. Low Leakage Switching Diodes
These offer reverse leakage specifications guaranteed to 500 pA. Versions available in single and dual.
IR
V(BR)R
Marking
Case
Style
Min
Volts
@ IBR
(A)
Max
(nA)
@ VR
Volts
MMBD1000LT1
MMBD1005LT1
MMBD1010LT1
AY
A3
A5
SOT23
SOT23
SOT23
Single
Dual Anode
Dual Cathode
30
30
30
100
100
100
0.5
0.5
0.5
30
30
30
MMBD2000T1
MMBD2005T1
MMBD2010T1
DH
DI
DP
SC70
SC70
SC70
Single
Dual Anode
Dual Cathode
30
30
30
100
100
100
0.5
0.5
0.5
30
30
30
MMBD3000T1
MMBD3005T1
MMBD3010T1
XP
XQ
XS
SC59
SC59
SC59
Single
Dual Anode
Dual Cathode
30
30
30
100
100
100
0.5
0.5
0.5
30
30
30
MMSD1000T1
4K
SOD123
Single
30
100
0.5
30
Device Type
Table 53. Small Signal HDTMOS MOSFETs

These provide the lowest drainsource resistance versus package size.
RDS(on) Max
Device Type
Marking
Channel
@Vgs1
(10 V)
@Vgs2
(4.5 V)
VGS(th)
@Vgs3
(2.5 V)
VDSS
Switching Time
Volts
Min
Volts
Max
t(on)
ns
t(off)
ns
Style
Case 31808 TO236AB (SOT23) PChannel and NChannel

2N7002LT1
BSS84LT1
BSS123LT1
BSS138LT1
MMBF0201NLT1
MMBF0202PLT1
MGSF1N02LT1
MGSF1N03LT1
MGSF1P02LT1
MGSF1P02ELT1
702
PD
SA
J1
N1
P3
N
P
N
N
N
P
N
N
P
P
7.5
6.0
1.0
1.4
0.085
0.10
3.5
0.16
10
3.5
1.4
3.5
0.125
0.145
0.5
0.21
60
50
100
50
20
20
20
30
20
20
1.0
0.8
0.8
0.5
1.0
1.0
1.0
1.0
1.0
0.7
2.5
2.0
2.8
1.5
2.4
2.4
2.4
2.4
2.4
1.2
2.5
20
20
2.5
2.5
2.5
2.5
2.5
2.5
16
40
20
15
16
16
16
16
15
21
21
21
21
21
21
21
21
21
21
Case 318G02 TSOP6 PChannel and NChannel

MGSF3441VT1
MGSF3441XT1
MGSF3442VT1
MGSF3442XT1
MGSF3454VT1
MGSF3454XT1
MGSF3455VT1
MGSF3455XT1
P
P
N
N
N
N
P
P
0.065
0.065
0.10
0.10
0.10
0.10
0.07
0.07
0.095
0.095
0.19
0.19
0.135
0.135
0.095
0.095
20
20
20
20
30
30
30
30
0.45
0.45
0.6
0.6
1.0
1.0
1.0
1.0
27
27
8.0
8.0
10
10
10
10
52
52
36
36
20
20
20
20
1
1
1
1
1
1
1
1
2.2
1.0
3.5
1.4
20
20
1.0
1.0
2.4
2.4
2.5
2.5
16
15
7
7

MMBF2202PT1
MMBF2201NT1
P3
N1
P
N
Selector Guide
137
Small Signal
Multiintegrated Devices
4
1
3
CASE 419B01
SOT363
CASE 31808
SOT23
VCC (4)
Vout
(3)
Vin 1.0 k
R1
6.8 V
Q1
(1)
33 k
R2
GND
Vref (6)
R3
Q2
VENBL
(5)
(2)
MDC3105LT1
Iout (1)
R4
R5
Q4
R6
GND (2) and (3)

MDC5001T1
INTERNAL CIRCUIT DIAGRAMS

Table 54. Low Voltage Bias Stabilizer
A silicon SMALLBLOCK integrated circuit which maintains stable bias current in various discrete bipolar junction and field
effect transistors.
VCC (Volts)
Device Type
Marking
Min
Max
ICC
A
Vref
Volts
Vref
Volts
10
200
2.1
50
Case 419B01 SOT363

MDC5001T1
E6
1.8
Table 55. Integrated Relay/Solenoid Driver

Monolithic circuit block to switch 3.0 V to 5.0 V relays. It is intended to replace an array of three to six discrete components.
VCC (Volts)
Device Type
Vin (Volts)
Min
Max
Min
Max
Vsat
(Volts)
Iin
(mA)
IC(on)
(mA)
2.0
5.5
2.0
5.5
0.4
2.5
250
Case 31808 SOT23

MDC3105LT1
Selector Guide
138
Section 2
Transistors
In Brief . . .
Motorolas plastic transistors and diodes encompass
hundreds of devices spanning the gamut from
general-purpose amplifiers and switches with a wide variety
of characteristics to dedicated special-purpose devices for
the most demanding applications. The popular TO-92,
1-Watt TO-92 and TO-116 combine proven reliability
performance and economy for through-the-hole
manufacturing, while the SOT-23, SC-59, SC-70/SOT-323,
SC90/SOT416, SOT-223, and SO-16 offer the same
solutions for surface mount manufacturing.
As an additional service to our customers Motorola will,
upon request, supply many of these devices in tape and reel
for automatic insertion.
Contact your Motorola representative for ordering information.
This section contains both single and multiple plasticencapsulated transistors.
CASE 29-04
(TO-226AA)
TO-92
CASE 29-05
(TO-226AE)
1 WATT TO-92
3
3
1
4
1
2
2
CASE 318-08
(TO-236AB)
SOT-23
NOTE: All SOT-23 package devices have had a T1 suffix

NOTE: added to the device title.
CASE 318D-04
SC-59
CASE 318E-04
(TO-261AA)
SOT-223
CASE 419-02
SC-70/SOT-323
CASE 463-01
SC-90/SOT-416
16
14
1
1
CASE 646-06
(TO-116)
CASE 751B-05
SO-16
Not to Scale
21
EMBOSSED TAPE AND REEL

SOT-23, SC-59, SC-70/SOT-323, SC90/SOT416, SOT-223 and SO-16 packages are available only in
Tape and Reel. Use the appropriate suffix indicated below to order any of the SOT-23, SC-59,
SC-70/SOT-323, SOT-223 and SO-16 packages. (See Section 6 on Packaging for additional information).
SOT-23:
available in 8 mm Tape and Reel

Use the device title (which already includes the T1 suffix) to order the 7 inch/3000 unit reel.
Replace the T1 suffix in the device title with a T3 suffix to order the 13 inch/10,000 unit reel.
SC-59:

SC-70/
SOT-323:

SOT-223:

Replace the T1 suffix in the device title with a T3 suffix to order the 13 inch/4000 unit reel.
SO-16:

Add an R1 suffix to the device title to order the 7 inch/500 unit reel.
RADIAL TAPE IN FAN FOLD BOX OR REEL

TO-92 packages are available in both bulk shipments and in Radial Tape in Fan Fold Boxes or Reels.
Fan Fold Boxes and Radial Tape Reel are the best methods for capturing devices for automatic insertion in
printed circuit boards.
TO-92:
available in Fan Fold Box

Add an RLR suffix and the appropriate Style code* to the device title to order the Fan Fold box.
available in 365 mm Radial Tape Reel
Add an RLR suffix and the appropriate Style code* to the device title to order the Radial Tape
Reel.
*Refer to Section 6 on Packaging for Style code characters and additional information on ordering
*requirements.
DEVICE MARKINGS/DATE CODE CHARACTERS

SOT-23, SC-59, SC-70/SOT-323, and the SC90/SOT416 packages have a device marking and a date
code etched on the device. The generic example below depicts both the device marking and a representation of the date code that appears on the SC-70/SOT-323, SC-59 and SOT-23 packages.
ABC D
The D represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the
part was manufactured.
22
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
General Purpose Transistors
2N3903
2N3904*
NPN Silicon
*Motorola Preferred Device
COLLECTOR
3
2
BASE
1
EMITTER
1
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector Emitter Voltage
VCEO
40
Vdc
Collector Base Voltage
VCBO
60
Vdc
Emitter Base Voltage
VEBO
6.0
Vdc
Collector Current Continuous
IC
200
mAdc
Total Device Dissipation @ TA = 25C

Derate above 25C
PD
625
5.0
mW
mW/C
Total Device Dissipation @ TC = 25C

Derate above 25C
PD
1.5
12
Watts
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit
Operating and Storage Junction

Temperature Range
CASE 2904, STYLE 1

TO92 (TO226AA)
THERMAL CHARACTERISTICS(1)
Characteristic
Thermal Resistance, Junction to Ambient
RqJA
200
C/W
Thermal Resistance, Junction to Case
RqJC
83.3
C/W
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)

Symbol
Min
Max
Unit
Collector Emitter Breakdown Voltage (2)

(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
Vdc
Collector Base Breakdown Voltage

(IC = 10 mAdc, IE = 0)
V(BR)CBO
60
Vdc
Emitter Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)
V(BR)EBO
6.0
Vdc
Base Cutoff Current

(VCE = 30 Vdc, VEB = 3.0 Vdc)
IBL
50
nAdc
Collector Cutoff Current

ICEX
50
nAdc
Characteristic
OFF CHARACTERISTICS
1. Indicates Data in addition to JEDEC Requirements.

2. Pulse Test: Pulse Width
300 ms; Duty Cycle
2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
23
2N3903 2N3904
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
2N3903
2N3904
20
40
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
2N3903
2N3904
35
70
(IC = 10 mAdc, VCE = 1.0 Vdc)
2N3903
2N3904
50
100
150
300
2N3903
2N3904
30
60
2N3903
2N3904
15
30
0.2
0.3
0.65
0.85
0.95
250
300
Unit
ON CHARACTERISTICS
DC Current Gain(1)
hFE
Collector Emitter Saturation Voltage(1)

(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc
VCE(sat)
Base Emitter Saturation Voltage(1)

VBE(sat)
Vdc
Vdc
SMALL SIGNAL CHARACTERISTICS

Current Gain Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
fT
2N3903
2N3904
MHz
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Cobo
4.0
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
8.0
pF
1.0
1.0
8.0
10
0.1
0.5
5.0
8.0
50
100
200
400
1.0
40
6.0
5.0
td
35
ns
tr
35
ns
ts
175
200
ns
tf
50
ns
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio
SmallSignal Current Gain
X 10 4
hre
2N3903
2N3904
hfe
2N3903
2N3904
Output Admittance
Noise Figure
(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k , f = 1.0 kHz)
hie
2N3903
2N3904
hoe
NF
2N3903
2N3904
mmhos
dB
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
((VCC = 3.0 Vdc, VBE = 0.5 Vdc,

IC = 10 mAdc, IB1 = 1.0 mAdc)
(VCC = 3.0 Vdc, IC = 10 mAdc,
IB1 = IB2 = 1.0 mAdc)
Fall Time
24
v 300 ms; Duty Cycle v 2.0%.
2N3903
2N3904
2N3903 2N3904
DUTY CYCLE = 2%
300 ns
+3 V
+10.9 V
10 < t1 < 500 ms

275
t1
DUTY CYCLE = 2%
+3 V
+10.9 V
275
10 k
10 k
0
0.5 V
CS < 4 pF*
< 1 ns
CS < 4 pF*
1N916
9.1 V
< 1 ns
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time

Equivalent Test Circuit
Figure 2. Storage and Fall Time

TYPICAL TRANSIENT CHARACTERISTICS
TJ = 25C
TJ = 125C
10
5000
2000
5.0
Q, CHARGE (pC)
CAPACITANCE (pF)
VCC = 40 V
IC/IB = 10
3000
7.0
Cibo
3.0
Cobo
2.0
1000
700
500
QT
300
200
QA
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30 40
100
70
50
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
REVERSE BIAS VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
Figure 3. Capacitance
Figure 4. Charge Data
200
25
2N3903 2N3904
500
500
IC/IB = 10
100
70
tr @ VCC = 3.0 V
50
30
20
VCC = 40 V
IC/IB = 10
300
200
t r, RISE TIME (ns)
TIME (ns)
300
200
40 V
100
70
50
30
20
15 V
10
7
5
10
2.0 V
td @ VOB = 0 V
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
Figure 5. Turn On Time
Figure 6. Rise Time
IC/IB = 10
200
500
ts = ts 1/8 tf
IB1 = IB2
VCC = 40 V
IB1 = IB2
300
200
IC/IB = 20
t f , FALL TIME (ns)
t s , STORAGE TIME (ns)
IC/IB = 20
200
500
300
200
7
5
100
70
IC/IB = 20
50
IC/IB = 10
30
20
100
70
50
10
10
7
5
7
5
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
IC/IB = 10
30
20
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
Figure 7. Storage Time
Figure 8. Fall Time
200
TYPICAL AUDIO SMALL SIGNAL CHARACTERISTICS

NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25C, Bandwidth = 1.0 Hz)
SOURCE RESISTANCE = 200

IC = 1.0 mA
NF, NOISE FIGURE (dB)
10
f = 1.0 kHz
SOURCE RESISTANCE = 1.0 k

IC = 50 A
0
0.1

IC = 100 A
0.2
0.4
1.0
2.0
IC = 1.0 mA
12

IC = 0.5 mA
26
14
W
12
IC = 0.5 mA
10
IC = 50 mA
8
IC = 100 mA
6
4
2
4.0
10
20
40
100
0.1
0.2
0.4
1.0
2.0
4.0
10
20
f, FREQUENCY (kHz)
RS, SOURCE RESISTANCE (k OHMS)
Figure 9.
Figure 10.
40
100
2N3903 2N3904
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25C)
100
hoe, OUTPUT ADMITTANCE (m mhos)
h fe , CURRENT GAIN
300
200
100
70
50
30
0.1
0.2
0.3
0.5
1.0
2.0 3.0
5.0
50
20
10
5
2
1
10
0.1
0.2
Figure 11. Current Gain
h re , VOLTAGE FEEDBACK RATIO (X 10 4 )
h ie , INPUT IMPEDANCE (k OHMS)
10
5.0
2.0
1.0
0.5
0.1
0.2
0.3
0.5
1.0
2.0 3.0
5.0
10
5.0
10
Figure 12. Output Admittance
20
0.2
0.3
0.5
1.0
2.0 3.0
5.0
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
10
0.1
Figure 13. Input Impedance
0.2
0.3
0.5
1.0
2.0 3.0
Figure 14. Voltage Feedback Ratio
h FE, DC CURRENT GAIN (NORMALIZED)
TYPICAL STATIC CHARACTERISTICS

2.0
TJ = +125C
VCE = 1.0 V
+25C
1.0
0.7
55C
0.5
0.3
0.2
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
Figure 15. DC Current Gain
27
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
2N3903 2N3904
1.0
TJ = 25C
0.8
IC = 1.0 mA
10 mA
30 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
IB, BASE CURRENT (mA)
Figure 16. Collector Saturation Region
1.0
1.2
TJ = 25C
VBE(sat) @ IC/IB =10
0.8
VBE @ VCE =1.0 V
0.6
0.4
VCE(sat) @ IC/IB =10
28
qVC FOR VCE(sat)

0
55C TO +25C
0.5
55C TO +25C
1.0
+25C TO +125C
qVB FOR VBE(sat)
1.5
0.2
0
+25C TO +125C
0.5
COEFFICIENT (mV/ C)
V, VOLTAGE (VOLTS)
1.0
1.0
2.0
5.0
10
20
50
100
200
2.0
20
40
60
80
100
120
140
160
Figure 17. ON Voltages
Figure 18. Temperature Coefficients
180 200
MOTOROLA
2N3905
2N3906*
PNP Silicon
COLLECTOR
3
2
BASE
1
EMITTER
1
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
40
Vdc
VCBO
40
Vdc
VEBO
5.0
Vdc
IC
200
mAdc

Derate above 25C
PD
625
5.0
mW
mW/C
Total Power Dissipation @ TA = 60C
PD
250
mW

Derate above 25C
PD
1.5
12
Watts
mW/C
TJ, Tstg
55 to +150

Temperature Range
CASE 2904, STYLE 1

TO92 (TO226AA)
THERMAL CHARACTERISTICS(1)
Symbol
Max
Unit
Characteristic
RqJA
200
C/W
RqJC
83.3
C/W

Symbol
Min
Max
Unit

(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
Vdc

(IC = 10 mAdc, IE = 0)
V(BR)CBO
40
Vdc

(IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
Vdc
Base Cutoff Current

IBL
50
nAdc

ICEX
50
nAdc
Characteristic
OFF CHARACTERISTICS
1. Indicates Data in addition to JEDEC Requirements.

300 ms; Duty Cycle
2.0%.
REV 2
29
2N3905 2N3906
Characteristic
Symbol
Min
Max
2N3905
2N3906
30
60
2N3905
2N3906
40
80
2N3905
2N3906
50
100
150
300
2N3905
2N3906
30
60
2N3905
2N3906
15
30
0.25
0.4
0.65
0.85
0.95
200
250
Unit
ON CHARACTERISTICS(1)
DC Current Gain
hFE
Collector Emitter Saturation Voltage

VCE(sat)
Base Emitter Saturation Voltage

VBE(sat)
Vdc
Vdc

fT
2N3905
2N3906
MHz
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Cobo
4.5
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
10.0
pF
0.5
2.0
8.0
12
0.1
0.1
5.0
10
50
100
200
400
1.0
3.0
40
60
5.0
4.0
td
35
ns
tr
35
ns
2N3905
2N3906
ts
200
225
ns
2N3905
2N3906
tf
60
75
ns
Input Impedance
Output Admittance
Noise Figure
hie
2N3905
2N3906
X 10 4
hre
2N3905
2N3906
hfe
2N3905
2N3906
mmhos
hoe
2N3905
2N3906
NF
2N3905
2N3906
dB
Delay Time
Rise Time
((VCC = 3.0 Vdc, VBE = 0.5 Vdc,

Storage Time
Fall Time
210
3 0 Vdc,
Vdc IC = 10 mAdc
(VCC = 3.0
mAdc,
IB1 = IB2 = 1.0 mAd
2N3905 2N3906
3V
3V
< 1 ns
+9.1 V
275
275
< 1 ns
10 k
+0.5 V
10 k
0
CS < 4 pF*
10.6 V
10 < t1 < 500 ms
300 ns
DUTY CYCLE = 2%
CS < 4 pF*
1N916
DUTY CYCLE = 2%
t1
10.9 V


10
5000
7.0
3000
2000
Cobo
5.0
Q, CHARGE (pC)
CAPACITANCE (pF)
TJ = 25C
TJ = 125C
Cibo
3.0
2.0
VCC = 40 V
IC/IB = 10
1000
700
500
300
200
QT
QA
1.0
0.1
0.2 0.3
0.5 0.7 1.0

2.0 3.0 5.0 7.0 10
REVERSE BIAS (VOLTS)
100
70
50
20 30 40
1.0
2.0 3.0
5.0 7.0 10
20 30 50 70 100
200
500
500
IC/IB = 10
300
200
VCC = 40 V
IB1 = IB2
300
200
tr @ VCC = 3.0 V
15 V
30
20
TIME (ns)
IC/IB = 20
100
70
50
100
70
50
30
20
IC/IB = 10
40 V
10
7
5
2.0 V
td @ VOB = 0 V
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
10
7
5
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
Figure 6. Fall Time
200
211
2N3905 2N3906

IC = 1.0 mA
12
f = 1.0 kHz
4.0
IC = 0.5 mA
3.0

IC = 50 A
2.0
IC = 100 A
1.0
0
0.1
0.2
0.4
IC = 1.0 mA
10
5.0
IC = 0.5 mA
8
6
IC = 50 mA
IC = 100 mA
1.0 2.0 4.0

10
f, FREQUENCY (kHz)
20
40
100
0.1
0.2
0.4
1.0 2.0
4.0
10
20
Rg, SOURCE RESISTANCE (k OHMS)
Figure 7.
40
100
Figure 8.
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25C)
100
hoe, OUTPUT ADMITTANCE ( mhos)
h fe , DC CURRENT GAIN
300
200
100
70
50
70
50
30
20
10
7
30
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
0.1
0.2

10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
212
5.0 7.0 10
20
0.3
0.2
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
2N3905 2N3906

2.0
TJ = +125C
VCE = 1.0 V
+25C
1.0
0.7
55C
0.5
0.3
0.2
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0 10
20
30
70
50
100
200

1.0
TJ = 25C
0.8
IC = 1.0 mA
10 mA
30 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
TJ = 25C
V, VOLTAGE (VOLTS)
0.8
q V , TEMPERATURE COEFFICIENTS (mV/ C)
1.0
VBE(sat) @ IC/IB = 10
VBE @ VCE = 1.0 V
0.6
0.4
VCE(sat) @ IC/IB = 10
0.2
1.0
2.0
50
5.0
10
20
100
200
1.0
0.5
qVC FOR VCE(sat)
+25C TO +125C
55C TO +25C
0.5
+25C TO +125C
1.0
55C TO +25C
qVB FOR VBE(sat)
1.5
2.0
20
40
60
80 100 120 140
160
180 200
213
MOTOROLA
2N4123
2N4124
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
1
2
MAXIMUM RATINGS
Rating
Symbol
2N4123
2N4124
Unit
VCEO
30
25
Vdc
VCBO
40
30
Vdc
VEBO
5.0
Vdc
IC
200
mAdc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
Watts
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit

Temperature Range
CASE 2904, STYLE 1

TO92 (TO226AA)
THERMAL CHARACTERISTICS
Characteristic
RqJA
200
C/W
RqJC
83.3
C/W

Symbol
Min
Max
30
25
40
30
V(BR)EBO
5.0
Vdc

(VCB = 20 Vdc, IE = 0)
ICBO
50
nAdc
Emitter Cutoff Current

(VEB = 3.0 Vdc, IC = 0)
IEBO
50
nAdc
Characteristic
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IE = 0)
(IC = 10 mAdc, IE = 0)
(IE = 10 mAdc, IC = 0)
V(BR)CEO
2N4123
2N4124
Vdc
V(BR)CBO
2N4123
2N4124
Vdc
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
214
2N4123 2N4124
Characteristic
Symbol
Min
Max
2N4123
2N4124
50
120
150
360
2N4123
2N4124
25
60
Unit
ON CHARACTERISTICS
DC Current Gain(1)
hFE

VCE(sat)
0.3
Vdc

VBE(sat)
0.95
Vdc
250
300

fT
MHz
2N4123
2N4124
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
8.0
pF
CollectorBase Capacitance
(IE = 0, VCB = 5.0 V, f = 1.0 MHz)
Ccb
4.0
pF
50
120
200
480
2N4123
2N4124
2.5
3.0
2N4123
2N4124
50
120
200
480
6.0
5.0

(IC = 2.0 mAdc, VCE = 10 Vdc, RS = 10 k ohm, f = 1.0 kHz)
Current Gain High Frequency
hfe
2N4123
2N4124
|hfe|
(IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz)

(IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz)
Noise Figure
(IC = 100 Adc, VCE = 5.0 Vdc, RS = 1.0 k ohm,
f = 1.0 kHz)
NF
dB
2N4123
2N4124
200
10
100
5.0
TIME (ns)
CAPACITANCE (pF)
7.0
Cibo
3.0
ts
70
50
td
30
tf
Cobo
2.0
VCC = 3 V
IC/IB = 10
VEB(off) = 0.5 V
10.0
7.0
1.0
0.1
tr
20
0.2 0.3
0.5 0.7 1.0

2.0 3.0 5.0 7.0 10
20 30 40
5.0
1.0
2.0 3.0
5.0 7.0 10
20 30 50 70 100
200
Figure 2. Switching Times
215
2N4123 2N4124
AUDIO SMALLSIGNAL CHARACTERISTICS
NOISE FIGURE
(VCE = 5 Vdc, TA = 25C)
Bandwidth = 1.0 Hz
IC = 1 mA
10

IC = 0.5 mA
8
6
14
f = 1 kHz
SOURCE RESISTANCE = 1 k
IC = 50 A
4
2

IC = 100 A
0
0.1
0.2
0.4
IC = 1 mA
12
12
1
2
4
10
f, FREQUENCY (kHz)
IC = 0.5 mA
10
IC = 50 mA
IC = 100 mA
6
4
2
20
40
0
0.1
100
0.2
0.4
Figure 3. Frequency Variations
40
1.0 2.0
4.0
10
20
RS, SOURCE RESISTANCE (k)
100
Figure 4. Source Resistance
h PARAMETERS
(VCE = 10 V, f = 1 kHz, TA = 25C)
100
50
hfe , CURRENT GAIN
300
200
100
70
50
20
10
5
2
1
30
0.1
0.2
0.5
1.0
2.0
5.0
10
0.1
0.2
hie , INPUT IMPEDANCE (k )
10
5.0
10
10
10
5.0
2.0
1.0
0.5
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.1
0.2
0.5
1.0
2.0
216
5.0
20
0.2
0.5
1.0
2.0
5.0
10
0.1
0.2
0.5
1.0
2.0
2N4123 2N4124
STATIC CHARACTERISTICS
2.0
TJ = +125C
1.0
VCE = 1 V
+25C
0.7
55C
0.5
0.3
0.2
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0 10
20
30
50
70
100
200
1.0
TJ = 25C
0.8
IC = 1 mA
10 mA
30 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
V, TEMPERATURE COEFFICIENTS (mV/C)
1.2
TJ = 25C
V, VOLTAGE (VOLTS)
1.0
0.8
VBE @ VCE = 1 V
0.6
0.4
0.2
0
1.0
2.0
50
5.0
10
20
100
200
Figure 11. On Voltages
1.0
0.5
+25C to +125C
qVC for VCE(sat)
55C to +25C
0.5
55C to +25C
1.0
+25C to +125C
qVB for VBE(sat)
1.5
2.0
20
40
60
80 100 120 140 160
180 200
217
MOTOROLA
Amplifier Transistor
2N4125
PNP Silicon
COLLECTOR
3
2
BASE
1
EMITTER
1
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
30
Vdc
VCBO
30
Vdc
VEBO
4.0
Vdc
IC
200
mAdc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
Watts
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit

Temperature Range
CASE 2904, STYLE 1

TO92 (TO226AA)
Characteristic
RqJA
200
C/W
RqJC
83.3
C/W

Symbol
Min
Max
Unit

(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
30
Vdc

(IC = 10 mAdc, IE = 0)
V(BR)CBO
30
Vdc

(IE = 10 mAdc, IC = 0)
V(BR)EBO
4.0
Vdc

(VCB = 20 Vdc, IE = 0)
ICBO
50
nAdc

(VEB = 3.0 Vdc, IC = 0)
IEBO
50
nAdc
Characteristic
OFF CHARACTERISTICS
1. Pulse Test: Pulse Width 300 ms, Duty Cycle = 2.0%.
REV 2
218
2N4125
Characteristic
Symbol
Min
Max
50
25
150
0.4
0.95
200
10
4.5
50
200
2.0
5.0
Unit
ON CHARACTERISTICS
DC Current Gain(1)
hFE

VCE(sat)

VBE(sat)
Vdc
Vdc

fT
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Ccb

hfe

|hfe|
Noise Figure
(IC = 100 Adc, VCE = 5.0 Vdc, RS = 1.0 k ohm, f = 1.0 kHz)
NF
MHz
pF
pF
dB
200
10
ts
7.0
5.0
Cibo
3.0
td
70
Cobo
TIME (ns)
CAPACITANCE (pF)
100
50
tr
tf
30
20
2.0
VCC = 3.0 V
IC/IB = 10
VBE(off) = 0.5 V
10.0
7.0
1.0
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
10
20 30 50
5.0
1.0
2.0 3.0
5.0
10
20 30
50
100
200
Figure 2. Switching Times
219
2N4125
AUDIO SMALLSIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = 5.0 Vdc, TA = 25C
Bandwidth = 1.0 Hz
IC = 1 mA
4.0
12
f = 1 kHz

IC = 0.5 mA
3.0
IC = 50 A
2.0
IC = 100 A
1.0
0
0.1
0.2
0.4
1.0 2.0 4.0

10
f, FREQUENCY (kHz)
IC = 1 mA
10
5.0
20
40
IC = 0.5 mA
8.0
6.0
4.0
IC = 50 mA
2.0
IC = 100 mA
0
0.1
100
0.2
0.4
Figure 3. Frequency Variations
40
1.0 2.0
4.0
10
20
100
Figure 4. Source Resistance
h PARAMETERS
VCE = 10 V, f = 1 kHz, TA = 25C
300
100
hfe , CURRENT GAIN
200
100
70
50
30
70
50
30
20
10
7.0
5.0
0.1
0.2
0.5
1.0
2.0
5.0
10
0.1
0.2
h ie , INPUT IMPEDANCE (k )
10
5.0
10
10
10
5.0
2.0
1.0
0.5
0.1
0.2
0.5
1.0
2.0
220
5.0
20
0.2
0.5
1.0
2.0
5.0
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.1
0.2
0.5
1.0
2.0
2N4125
2.0
TJ = +125C
VCE = 1 V
+25C
1.0
0.7
55C
0.5
0.3
0.2
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0 10
20
30
50
70
100
200
1.0
TJ = 25C
0.8
IC = 1 mA
10 mA
30 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
TJ = 25C
V, VOLTAGE (VOLTS)
0.8
1.0
VBE @ VCE = 1 V
0.6
0.4
0.2
0
1.0
2.0
50
5.0 10
20
100
200
1.0
0.5
qVC for VCE(sat)
+25C to +125C
55C to +25C
0
0.5
+25C to +125C
qVS for VBE(sat)
1.0
55C to +25C
1.5
2.0
20
40
60
80 100 120 140 160
180 200
221
MOTOROLA
General Purpose Transistor
2N4264
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
1
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
15
Vdc
VCBO
30
Vdc
VEBO
6.0
Vdc
IC
200
mAdc

Derate above 25C
PD
350
2.8
mW
mW/C

Derate above 25C
PD
1.0
8.0
Watts
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit
RqJA
357
C/W
RqJC
125
C/W

Temperature Range
CASE 2904, STYLE 1

TO92 (TO226AA)
Characteristic

Characteristic
Symbol
Min
Max
15
30
6.0
0.1
10
100
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO

(IC = 10 mAdc, IE = 0)
V(BR)CBO

(IE = 10 mAdc, IC = 0)
V(BR)EBO
Base Cutoff Current

(VCE = 12 Vdc, VEB(off) = 0.25 Vdc)
(VCE = 12 Vdc, VEB(off) = 0.25 Vdc, TA = 100C)
IBEV

ICEX
Vdc
Vdc
Vdc
Adc
nAdc
REV 2
222
2N4264
Characteristic
Symbol
Min
Max
Unit
25
40
20
40
30
20
160
0.22
0.35
0.65
0.75
0.8
0.95
fT
300
MHz
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
8.0
pF
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz, IE = 0)
Cobo
4.0
pF
( CC = 10 Vdc, VEB(off) = 2.0 Vdc,

(V
IC = 100 mAdc, IB1 = 10 mAdc) (Fig. 1, Test Condition C)
td
8.0
ns
tr
15
ns
VCC = 10 Vdc, (IC = 10 mAdc, for ts)

(IC = 100 mA for tf)
(IB1 = 10 mA) (IB2 = 10 mA) (Fig. 1, Test Condition C)
ts
20
ns
tf
15
ns
TurnOn Time
(VCC = 3.0 Vdc, VEB(off) = 1.5 Vdc,

IC = 10 mAdc, IB1 = 3.0 mAdc) (Fig. 1, Test Condition A)
ton
25
ns
TurnOff Time

IB1 = 3.0 mAdc, IB2 = 1.5 mAdc) (Fig. 1, Test Condition A)
toff
35
ns
Storage Time
(VCC = 10 Vdc, IC = 10 mA,

IB1 = IB2 = 10 mAdc) (Fig. 1, Test Condition B)
ts
20
ns
Total Control Charge
(VCC = 3.0 Vdc, IC = 10 mAdc, IB = mAdc)

(Fig. 3, Test Condition A)
QT
80
pC
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mAdc, VCE = 1.0 Vdc, TA = 55C)
(IC = 100 mAdc, VCE = 1.0 Vdc)(1)
(IC = 200 mAdc, VCE = 1.0 Vdc)(1)
hFE

(IC = 100 mAdc, IB = 10 mAdc)(1)
VCE(sat)

(IC = 100 mAdc, IB = 10 mAdc)(1)
VBE(sat)
Vdc
Vdc

Delay Time
Rise Time
Storage Time
Fall Time
Figure 1. Switching Time Equivalent Test Circuit

Test
Condition IC
VCC
RS
mA
10
10
100
RC CS(max) VBE(off)
pF
3300 270
1.5
10
560 960
10
560
12
2.0
96
V1
V2
V3
10.55 4.15 10.70
4.65 6.55
6.35 4.65 6.55
V1
ton
t1
V3
0
V2
0
VEB(off)
< 2 ns
toff
t1
VCC
RC
RB
CS
< 2 ns
PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2%
223
2N4264
CURRENT GAIN CHARACTERISTICS
100
2N4264
VCE = 1 V
h FE, DC CURRENT GAIN
70
TJ = 125C
50
25C
15C
30
55C
20
10
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
Figure 2. Minimum Current Gain
270
t1
3V
8 pF
+10 V
V
0
C < COPT
CS < 4 pF
<1 ns 9.2 k
PULSE WIDTH (t1) = 5 s
DUTY CYCLE = 2%
C=0
COPT
TIME
Figure 3. QT Test Circuit
Figure 4. TurnOff Waveform

NOTE 1
When a transistor is held in a conductive state by a base current, IB,

a charge, QS, is developed or stored in the transistor. QS may be
written: QS = Q1 + QV + QX.
Q1 is the charge required to develop the required collector current.
This charge is primarily a function of alpha cutoff frequency. QV is the
charge required to charge the collectorbase feedback capacity. QX is
excess charge resulting from overdrive, i.e., operation in saturation.
The charge required to turn a transistor on to the edge of saturation
is the sum of Q1 and QV which is defined as the active region charge,
QA. QA = IB1tr when the transistor is driven by a constant current step
IC
.
(IB1) and IB1 < <
hFE
224
If IB were suddenly removed, the transistor would continue to

conduct until QS is removed from the active regions through an
external path or through internal recombination. Since the internal
recombination time is long compared to the ultimate capability of a
transistor, a charge, QT, of opposite polarity, equal in magnitude, can
be stored on an external capacitor, C, to neutralize the internal charge
and considerably reduce the turnoff time of the transistor. Figure 3
shows the test circuit and Figure 4 the turnoff waveform. Given QT
from Figure 13, the external C for worstcase turnoff in any circuit is:
C = QT/V, where V is defined in Figure 3.
2N4264
ON CONDITION CHARACTERISTICS
VCE, MAXIMUM COLLECTOREMITTER

VOLTAGE (VOLTS)
1.0
2N4264
TJ = 25C
0.8
IC = 10 mA
50 mA
200 mA
100 mA
0.6
0.4
0.2
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
1.0
IC/IB = 10
TJ = 25C
Vsat , SATURATION VOLTAGE (VOLTS)
1.2
MAX VBE(sat)
MIN VBE(sat)
0.8
0.6
MAX VCE(sat)
0.4
0.2
0
1.0
2.0 3.0
50 70 100
5.0 7.0 10
20 30
200
Figure 6. Saturation Voltage Limits
1.0
0.5
qVC for VCE(sat)
(25C to 125C)
( 55C to 25C)
0
0.5
(25C to 125C)
1.0
qVB for VBE
( 55C to 25C)
1.5
2.0
40
80
120
160
200
225
2N4264
DYNAMIC CHARACTERISTICS
200
200
VCC = 10 V
TJ = 25C
100
70
70
t r , RISE TIME (ns)
t d, DELAY TIME (ns)
100
IC/IB = 10
TJ = 25C
TJ = 125C
td @ VEB(off) = 3 V
50
30
2V
20
0V
10
VCC = 10 V
50
30
20
VCC = 3 V
10
7.0
7.0
5.0
5.0
1.0
2.0
50
5.0
10
20
100
200
1.0
50
5.0
10
20
2.0
Figure 8. Delay Time
200
IC/IB = 10
20
10
ts
VCC = 10 V
TJ = 25C
TJ = 125C
100
IC/IB = 20
30
TJ = 25C
TJ = 125C
7.0
^ ts 1/8 tf
70
50
30
IC/IB = 20
20
IC/IB = 10
10
IB1 = IB2
7.0
5.0
5.0
1.0
50
5.0
10
20
2.0
100
200
1.0
50
5.0
10
20
2.0
100
200
5.0 7.0 10
20 30 50 70 100
200
Figure 11. Fall Time
10
1000
MAX
TYP
7.0
IC/IB = 10
TJ = 25C
TJ = 125C
700
500
Cibo
Q, CHARGE (pC)
CAPACITANCE (pF)
200
Figure 9. Rise Time
50
5.0
Cobo
3.0
300
200
QT
100
VCC = 3 V
70
50
VCC = 10 V
30
2.0
0.1
0.2
0.5
1.0
2.0
REVERSE BIAS (Vdc)
5.0
Figure 12. Junction Capacitance
226
100
10
20
QA
VCC = 3 V
1.0
2.0 3.0
Figure 13. Maximum Charge Data
MOTOROLA
2N4400
2N4401*
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
1
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
40
Vdc
VCBO
60
Vdc
VEBO
6.0
Vdc
IC
600
mAdc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
Watts
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit

Temperature Range
CASE 2904, STYLE 1

TO92 (TO226AA)
Characteristic
RqJA
200
C/W
RqJC
83.3
C/W

Symbol
Min
Max
Unit

(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
Vdc

(IC = 0.1 mAdc, IE = 0)
V(BR)CBO
60
Vdc

(IE = 0.1 mAdc, IC = 0)
V(BR)EBO
6.0
Vdc
Base Cutoff Current

IBEV
0.1
Adc

ICEX
0.1
Adc
Characteristic
OFF CHARACTERISTICS
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
REV 1
227
2N4400 2N4401
Characteristic
Symbol
Min
Max
Unit
DC Current Gain
2N4401
hFE
20
2N4400
2N4401
20
40
2N4400
2N4401
40
80
2N4400
2N4401
50
100
150
300
2N4400
2N4401
20
40
Collector Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc)

VCE(sat)
0.4
0.75
Vdc
Base Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc)

Base Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc)
VBE(sat)
0.75
0.95
1.2
Vdc
200
250

fT
2N4400
2N4401
MHz
CollectorBase Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Ccb
6.5
pF
EmitterBase Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Ceb
30
pF
0.5
1.0
7.5
15
0.1
8.0
20
40
250
500
hoe
1.0
30
mhos
( CC = 30 Vdc, VBE = 2.0 Vdc,

(V
IC = 150 mAdc, IB1 = 15 mAdc)
td
15
ns
tr
20
ns
( CC = 30 Vdc, IC = 150 mAdc,

(V
IB1 = IB2 = 15 mAdc)
ts
225
ns
tf
30
ns
Input Impedance
hie
2N4400
2N4401
Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hre
k ohms
X 104
hfe
2N4400
2N4401
Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Delay Time
Rise Time
Storage Time
Fall Time
SWITCHING TIME EQUIVALENT TEST CIRCUITS

+ 30 V
+ 30 V
+16 V
0
2.0 V
1.0 to 100 s,
DUTY CYCLE 2.0%
200
+16 V
1.0 to 100 s,
DUTY CYCLE 2.0%
200
0
1.0 k
< 2.0 ns
CS* < 10 pF
1.0 k
14 V
< 20 ns
CS* < 10 pF
4.0 V
Scope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope
Figure 1. TurnOn Time
228
Figure 2. TurnOff Time
2N4400 2N4401
TRANSIENT CHARACTERISTICS
25C
100C
10
7.0
5.0
30
10
7.0
5.0
QT
2.0
1.0
0.7
0.5
0.3
0.2
Ccb
3.0
2.0
0.1
VCC = 30 V
IC/IB = 10
3.0
Cobo
Q, CHARGE (nC)
CAPACITANCE (pF)
20
QA
0.1
0.2 0.3 0.5
2.0 3.0 5.0

10
1.0
REVERSE VOLTAGE (VOLTS)
20 30
50
10
200
50 70 100
30
20
Figure 3. Capacitances
100
IC/IB = 10
70
VCC = 30 V
IC/IB = 10
70
tr
50
50
tr @ VCC = 30 V
tr @ VCC = 10 V
td @ VEB = 2.0 V
td @ VEB = 0
30
20
t, TIME (ns)
t, TIME (ns)
500
100
tf
30
20
10
10
7.0
7.0
5.0
5.0
10
20
30
50
70
200
100
300
500
10
20
30
50
70
100
200
Figure 6. Rise and Fall Times
300
300
500
100
ts = ts 1/8 tf
IB1 = IB2
IC/IB = 10 to 20
VCC = 30 V
IB1 = IB2
70
50
200
t s, STORAGE TIME (ns)
300
100
70
IC/IB = 20
30
20
IC/IB = 10
10
50
7.0
30
5.0
10
20
30
50
70
100
200
300
500
10
20
30
50
70
100
200
Figure 8. Fall Time
300
500
229
2N4400 2N4401
SMALLSIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = 10 Vdc, TA = 25C
Bandwidth = 1.0 Hz
10
10
IC = 1.0 mA, RS = 150
IC = 500 A, RS = 200
IC = 100 A, RS = 2.0 k
IC = 50 A, RS = 4.0 k
8.0
8.0
f = 1.0 kHz
RS = OPTIMUM
RS = SOURCE
RS = RESISTANCE
6.0
4.0
2.0
IC = 50 A
IC = 100 A
IC = 500 A
IC = 1.0 mA
6.0
4.0
2.0
0
0.01 0.02 0.05 0.1 0.2
0
0.5 1.0 2.0 5.0
10
20
50
100
50
100 200
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 k 100 k
f, FREQUENCY (kHz)
RS, SOURCE RESISTANCE (OHMS)
Figure 9. Frequency Effects
Figure 10. Source Resistance Effects
h PARAMETERS
VCE = 10 Vdc, f = 1.0 kHz, TA = 25C
This group of graphs illustrates the relationship between
selected from both the 2N4400 and 2N4401 lines, and the
hfe and other h parameters for this series of transistors. To
same units were used to develop the correspondingly numobtain these curves, a highgain and a lowgain unit were
bered curves on each graph.
50 k
hfe , CURRENT GAIN
200
100
70
2N4401 UNIT 1
2N4401 UNIT 2
2N4400 UNIT 1
2N4400 UNIT 2
50
30
20
0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
hie , INPUT IMPEDANCE (OHMS)
300
2.0 k
1.0 k
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
100
5.0 k
10
2N4401 UNIT 1
2N4401 UNIT 2
2N4400 UNIT 1
2N4400 UNIT 2
3.0
2.0
1.0
0.7
0.5
0.3
230
10 k
7.0
5.0
0.2
0.1
20 k
500
5.0 7.0 10
2N4401 UNIT 1
2N4401 UNIT 2
2N4400 UNIT 1
2N4400 UNIT 2
0.2
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
50
20
10
5.0
2N4401 UNIT 1
2N4401 UNIT 2
2N4400 UNIT 1
2N4400 UNIT 2
2.0
1.0
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
2N4400 2N4401
h FE, NORMALIZED CURRENT GAIN
3.0
VCE = 1.0 V
VCE = 10 V
2.0
TJ = 125C
1.0
25C
0.7
0.5
55C
0.3
0.2
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0 10
20
30
50
70
100
200
300
500
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
1.0
TJ = 25C
0.8
0.6
IC = 1.0 mA
10 mA
100 mA
500 mA
0.4
0.2
0
0.01
0.02 0.03
0.2
0.05 0.07 0.1
0.3
0.5 0.7 1.0

2.0
3.0
5.0 7.0
10
20
30
50
1.0
+ 0.5
TJ = 25C
0.6
VBE @ VCE = 10 V
0.4
0.2
0.5
50
1.0 2.0 5.0 10 20
0.5
1.0
1.5
qVB for VBE
2.0
0
0.1 0.2
qVC for VCE(sat)
0
COEFFICIENT (mV/ C)
VOLTAGE (VOLTS)
0.8
100 200
500
2.5
0.1 0.2
0.5
50
1.0 2.0
5.0 10 20
100 200
500
231
MOTOROLA
2N4402
2N4403*
PNP Silicon
COLLECTOR
3
2
BASE
1
EMITTER
1
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
40
Vdc
VCBO
40
Vdc
VEBO
5.0
Vdc
IC
600
mAdc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
Watt
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit

Temperature Range
CASE 2904, STYLE 1

TO92 (TO226AA)
Characteristic
RqJA
200
C/W
RqJC
83.3
C/W

Symbol
Min
Max
Unit

(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
Vdc

(IC = 0.1 mAdc, IE = 0)
V(BR)CBO
40
Vdc

(IE = 0.1 mAdc, IC = 0)
V(BR)EBO
5.0
Vdc
Base Cutoff Current

IBEV
0.1
Adc

ICEX
0.1
Adc
Characteristic
OFF CHARACTERISTICS
232
2N4402 2N4403
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
2N4403
hFE
30
2N4402
2N4403
30
60
2N4402
2N4403
50
100
(IC = 150 mAdc, VCE = 2.0 Vdc)(1)
2N4402
2N4403
50
100
150
300
Both
20
0.4
0.75
0.75
0.95
1.3
150
200
(IC = 500 mAdc, VCE = 2.0 Vdc)(1)

(IC = 150 mAdc, IB = 15 mAdc)
VCE(sat)
Vdc
VBE(sat)
Vdc

fT
2N4402
2N4403
MHz
CollectorBase Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Ccb
8.5
EmitterBase Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Ceb
30
Input Impedance
hie
2N4402
2N4403
pF
pF
ohms
750
1.5 k
7.5 k
15 k
0.1
8.0
30
60
250
500
hoe
1.0
100
mhos
( CC = 30 Vdc, VBE = + 2.0 Vdc,

(V
td
15
ns
tr
20
ns
( CC = 30 Vdc, IC = 150 mAdc,

(V
IB1 = 15 mA, IB2 = 15 mA)
ts
225
ns
tf
30
ns
Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hre
X 104
hfe
2N4402
2N4403
Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Delay Time
Rise Time
Storage Time
Fall Time
SWITCHING TIME EQUIVALENT TEST CIRCUIT

30 V
30 V
200
< 2 ns
+2 V
+14 V
0
0
1.0 k
16 V
200
< 20 ns
10 to 100 s,
DUTY CYCLE = 2%
CS* < 10 pF
1.0 k
16 V
CS* < 10 pF
1.0 to 100 s,
DUTY CYCLE = 2%
+ 4.0 V


233
2N4402 2N4403
25C
100C
10
7.0
5.0
30
VCC = 30 V
IC/IB = 10
Ceb
3.0
Q, CHARGE (nC)
CAPACITANCE (pF)
20
10
7.0
Ccb
5.0
2.0
1.0
0.7
0.5
QT
0.3
QA
0.2
2.0
0.1
0.1
0.2 0.3
20
2.0 3.0 5.0 7.0 10

0.5 0.7 1.0
30
10
20
300
500
100
100
IC/IB = 10
70
70
VCC = 30 V
IC/IB = 10
50
50
tr @ VCC = 30 V
tr @ VCC = 10 V
td @ VBE(off) = 2 V
td @ VBE(off) = 0
30
20
t, TIME (ns)
200
30
50 70 100
30
20
10
10
7.0
7.0
5.0
5.0
10
20
30
50
70
200
100
300
500
10
20
30
50
70
100
200
Figure 6. Rise Time
300
500
200
IC/IB = 10
100
IC/IB = 20
70
50
IB1 = IB2
ts = ts 1/8 tf
30
20
10
20
30
50
70
100
200
300
500
234
2N4402 2N4403
NOISE FIGURE
Bandwidth = 1.0 Hz
10
10
f = 1 kHz
8
8
IC = 1.0 mA, RS = 430
IC = 500 A, RS = 560
IC = 50 A, RS = 2.7 k
IC = 100 A, RS = 1.6 k
RS = OPTIMUM SOURCE RESISTANCE
0
0.01 0.02 0.05 0.1 0.2
IC = 50 A
100 A
500 A
1.0 mA
0
0.5 1.0 2.0 5.0
10
20
50
100
50
100
200
500
1k
2k
5k
10 k 20 k
f, FREQUENCY (kHz)
50 k
h PARAMETERS
VCE = 10 Vdc, f = 1.0 kHz, TA = 25C
selected from both the 2N4402 and 2N4403 lines, and the
same units were used to develop the correspondingly
obtain these curves, a highgain and a lowgain unit were
numbered curves on each graph.
100 k
700
50 k
hfe , CURRENT GAIN
500
300
200
2N4403 UNIT 1
2N4403 UNIT 2
2N4402 UNIT 1
2N4402 UNIT 2
100
70
50
1000
2N4403 UNIT 1
2N4403 UNIT 2
2N4402 UNIT 1
2N4402 UNIT 2
20 k
10 k
5k
2k
1k
500
200
30
0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
100
5.0 7.0 10
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
500
10
0.2
IC, COLLECTOR CURRENT (mAdc)
20
2N4403 UNIT 1
2N4403 UNIT 2
2N4402 UNIT 1
2N4402 UNIT 2
5.0
2.0
1.0
0.5
0.2
0.1
0.1
0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
100
50
20
10
2N4403 UNIT 1
2N4403 UNIT 2
2N4402 UNIT 1
2N4402 UNIT 2
5.0
2.0
1.0
0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
235
2N4402 2N4403
3.0
VCE = 1.0 V
VCE = 10 V
2.0
TJ = 125C
25C
1.0
55C
0.7
0.5
0.3
0.2
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0 10
20
30
70
50
100
200
300
500
1.0
0.8
0.6
IC = 1.0 mA
10 mA
100 mA
500 mA
0.4
0.2
0
0.005
0.01
0.02
0.03
0.05 0.07 0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
5.0
7.0
10
20
30
50
0.5
TJ = 25C
0.8
0.6
VBE(sat) @ VCE = 10 V
COEFFICIENT (mV/ C)
VOLTAGE (VOLTS)
1.0
0.4
0.2
qVC for VCE(sat)
0.5
1.0
1.5
qVS for VBE
2.0
0
0.1 0.2
0.5
50 100 200
1.0 2.0
5.0 10 20
236
500
2.5
0.1 0.2
0.5
50 100 200
1.0 2.0 5.0 10 20
500
MOTOROLA
NPN Silicon
2N4410
COLLECTOR
3
2
BASE
1
EMITTER
1
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
80
Vdc
VCBO
120
Vdc
VEBO
5.0
Vdc
IC
250
mAdc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
Watts
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit

Temperature Range
CASE 2904, STYLE 1

TO92 (TO226AA)
Characteristic
RqJA
200
C/W
RqJC
83.3
C/W

Symbol
Min
Max
Unit

(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
80
Vdc

(IC = 500 Adc, VBE = 5.0 Vdc, RBE = 8.2 k ohms)
V(BR)CEX
120
Vdc

(IC = 10 Adc, IE = 0)
V(BR)CBO
120
Vdc

(IE = 10 Adc, IC = 0)
V(BR)EBO
5.0
Vdc
0.01
1.0
0.1
Characteristic
OFF CHARACTERISTICS

(VCB = 100 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0, TA = 100C)
ICBO

(VEB = 4.0 Vdc, IC = 0)
IEBO
Adc
Adc
REV 1
237
2N4410
Characteristic
Symbol
Min
Max
60
60
400
Unit
ON CHARACTERISTICS
DC Current Gain
hFE

(IC = 1.0 mAdc, IB = 0.1 mAdc)
VCE(sat)
0.2
Vdc

VBE(sat)
0.8
Vdc
Base Emitter On Voltage

VBE(on)
0.8
Vdc
fT
60
300
MHz
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz, emitter guarded)
Ccb
12
pF
EmitterBase Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz, collector guarded)
Ceb
50
pF

Current Gain Bandwidth Product(2)
2. fT = |hfe| ftest.
500
300
200
VCE = 1.0 V
VCE = 5.0 V
TJ = 125C
25C
100
55C
50
30
20
10
7.0
5.0
0.1
0.2
0.3
0.5
0.7
1.0
3.0
2.0
5.0
7.0
10
20
30
50
70
100
VCE , COLLECTOREMITTER VOLTAGE (VOLTS)
1.0
0.9
0.8
0.7
0.6
IC = 1.0 mA
10 mA
100 mA
30 mA
0.5
0.4
0.3
0.2
0.1
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
238
2N4410
101
IC, COLLECTOR CURRENT ( A)
VCE = 30 V
100
TJ = 125C
101
102
75C
103
REVERSE
FORWARD
25C
104
105
0.4
IC = ICES
0.2
0
0.1
0.2
0.3
0.4
0.1
VBE, BASEEMITTER VOLTAGE (VOLTS)
0.3
0.5
0.6
Figure 3. Collector CutOff Region
1.0
2.5
V, TEMPERATURE COEFFICIENT (mV/ C)
TJ = 25C
V, VOLTAGE (VOLTS)
0.8
0.6
0.4
0.2
0
0.1
0.2 0.3 0.5

1.0 2.0 3.0 5.0 10 20 30
50
2.0
1.0
qVC for VCE(sat)
0.5
0
0.5
1.0
qVB for VBE(sat)
1.5
2.0
2.5
0.1
100
TJ = 55C to +135C
1.5
0.2 0.3 0.5 1.0 2.0 3.0 5.0

10 20 30
100
10 s
INPUT PULSE
tr, tf 10 ns
DUTY CYCLE = 1.0%
0.25 F
3.0 k
RC
RB
Vout
5.1 k
Vin
100
1N914
Values Shown are for IC @ 10 mA
Figure 6. Switching Time Test Circuit
TJ = 25C
30
C, CAPACITANCE (pF)
VCC
30 V
VBB
8.8 V
Vin
100
100
70
50
10.2 V
50
20
10
Cibo
7.0
5.0
Cobo
3.0
2.0
1.0
0.2
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
239
2N4410
1000
5000
IC/IB = 10
TJ = 25C
500
1000
tr @ VCC = 30 V
100
50
td @ VEB(off) = 1.0 V
30
VCC = 120 V
300
ts @ VCC = 120 V
100
1.0
20 30
2.0 3.0 5.0 10
240
500
200
20
10
0.2 0.3 0.5
IC/IB = 10
TJ = 25C
tf @ VCC = 30 V
t, TIME (ns)
t, TIME (ns)
200
2000
tr @ VCC = 120 V
300
tf @ VCC = 120 V
3000
50
100
200
50
0.2 0.3 0.5
20 30 50
1.0 2.0 3.0 5.0
10
100
200
MOTOROLA
2N5087
PNP Silicon
COLLECTOR
3
Motorola Preferred Device
2
BASE
1
EMITTER
1
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
50
Vdc
VCBO
50
Vdc
VEBO
3.0
Vdc
IC
50
mAdc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
Watts
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit
RqJA
200
C/W
RqJC
83.3
C/W

Temperature Range
CASE 2904, STYLE 1

TO92 (TO226AA)
Characteristic

Symbol
Min
Max
Unit

(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
50
Vdc

(IC = 100 Adc, IE = 0)
V(BR)CBO
50
Vdc

(VCB = 35 Vdc, IE = 0)
ICBO
50
nAdc

(VEB = 3.0 Vdc, IC = 0)
IEBO
50
nAdc
Characteristic
OFF CHARACTERISTICS
(Replaces 2N5086/D)
241
2N5087
Characteristic
Symbol
Min
Max
250
250
250
800
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 100 Adc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)(1)
hFE

VCE(sat)
0.3
Vdc

VBE(on)
0.85
Vdc
fT
40
MHz
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Ccb
4.0
pF

(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
hfe
250
900
Noise Figure
(IC = 20 Adc, VCE = 5.0 Vdc, RS = 1.0 k, f = 1.0 kHz)
NF
2.0
2.0

(IC = 500 Adc, VCE = 5.0 Vdc, f = 20 MHz)
dB
242
2N5087
TYPICAL NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25C)
10
7.0
IC = 10 A
5.0
In, NOISE CURRENT (pA)
en, NOISE VOLTAGE (nV)
1.0
7.0
5.0
BANDWIDTH = 1.0 Hz
RS 0
30 A
3.0
100 A
300 A
1.0 mA
2.0
BANDWIDTH = 1.0 Hz
RS
IC = 1.0 mA
3.0
2.0
300 A
1.0
0.7
0.5
100 A
30 A
0.3
0.2
1.0
10 A
0.1
10
20
50
100 200
500 1.0 k
f, FREQUENCY (Hz)
2.0 k
5.0 k
10
10 k
20
50
Figure 1. Noise Voltage
100 200
500 1.0 k 2.0 k
f, FREQUENCY (Hz)
5.0 k
10 k
Figure 2. Noise Current
NOISE FIGURE CONTOURS
1.0 M
500 k
BANDWIDTH = 1.0 Hz
200 k
100 k
50 k
20 k
10 k
0.5 dB
5.0 k
1.0 dB
2.0 k
1.0 k
500
2.0 dB
3.0 dB
200
100
RS , SOURCE RESISTANCE (OHMS)
(VCE = 5.0 Vdc, TA = 25C)
5.0 dB
10
20
30
50 70 100
200 300
IC, COLLECTOR CURRENT (A)
1.0 M
500 k
20 k
10 k
0.5 dB
5.0 k
1.0 dB
2.0 k
1.0 k
500
2.0 dB
3.0 dB
200
100
500 700 1.0 k
5.0 dB
10
Figure 3. Narrow Band, 100 Hz
1.0 M
500 k
BANDWIDTH = 1.0 Hz
200 k
100 k
50 k
20
30
50 70 100
200 300
500 700 1.0 k
Figure 4. Narrow Band, 1.0 kHz
10 Hz to 15.7 kHz
200 k
100 k
50 k
Noise Figure is Defined as:
20 k
10 k
NF
0.5 dB
5.0 k
2.0 k
1.0 k
500
1.0 dB
2.0 dB
3.0 dB
5.0 dB
200
100
10
20
30
50 70 100
200 300
2 2 12
S ) In RS
+ 20 log10 en2 ) 4KTR
4KTRS
en = Noise Voltage of the Transistor referred to the input. (Figure 3)

In = Noise Current of the Transistor referred to the input. (Figure 4)
K = Boltzmans Constant (1.38 x 1023 j/K)
T = Temperature of the Source Resistance (K)
RS = Source Resistance (Ohms)
500 700 1.0 k
Figure 5. Wideband
243
2N5087
400
TJ = 125C
25C
200
55C
100
80
60
VCE = 1.0 V
VCE = 10 V
40
0.003 0.005
0.01
0.02 0.03
0.05 0.07 0.1
0.2 0.3 0.5 0.7 1.0

2.0
3.0
5.0 7.0
10
20
30
50 70 100
100
1.0
TA = 25C
0.8
IC = 1.0 mA
0.6
10 mA
50 mA
100 mA
0.4
0.2
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
TA = 25C
PULSE WIDTH = 300 s
80 DUTY CYCLE 2.0%
300 A
200 A
150 A
40
100 A
50 A
20
0
5.0 10
20
5.0
10
15
20
25
30
35
TJ = 25C
V, VOLTAGE (VOLTS)
1.2
1.0
0.8
0.6
VBE(on) @ VCE = 1.0 V
0.4
0.2
0
0.5 1.0
2.0
5.0
10
20
244
40
Figure 8. Collector Characteristics
1.4
0.2
250 A
60
0.1
IB = 400 A
350 A
50
100
1.6
*APPLIES for IC/IB hFE/2
0.8
*qVC for VCE(sat)
25C to 125C
0
55C to 25C
0.8
25C to 125C
1.6
2.4
0.1
qVB for VBE

0.2
55C to 25C
0.5
1.0 2.0
5.0
10 20
50
100
2N5087
TYPICAL DYNAMIC CHARACTERISTICS
500
300
200
200
100
70
50
30
tr
20
10
7.0
5.0
1.0
100
70
50
tf
30
td @ VBE(off) = 0.5 V
20
2.0
3.0
50 70
20 30
5.0 7.0 10
10
1.0
100
2.0 3.0 5.0 7.0 10

20 30
50 70 100
500
10
TJ = 25C
TJ = 25C
7.0
VCE = 20 V
300
Cib
C, CAPACITANCE (pF)
f T, CURRENTGAIN BANDWIDTH PRODUCT (MHz)
5.0 V
200
100
5.0
3.0
2.0
Cob
70
50
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
1.0
0.05
50
0.1
0.2
0.5
1.0
2.0
5.0
Figure 13. CurrentGain Bandwidth Product
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
VCE = 10 Vdc
f = 1.0 kHz
TA = 25C
10
0.2
0.1
10
20
50
200
20
VCC = 3.0 V
IC/IB = 10
IB1 = IB2
TJ = 25C
ts
300
t, TIME (ns)
t, TIME (ns)
1000
700
500
VCC = 3.0 V
IC/IB = 10
TJ = 25C
100
70
50
VCE = 10 Vdc
f = 1.0 kHz
TA = 25C
30
20
10
7.0
5.0
3.0
0.2
0.5
20
1.0 2.0
5.0
10
50
100
2.0
0.1
0.2
0.5
20
1.0 2.0
5.0
10
50
100
245
r(t) TRANSIENT THERMAL RESISTANCE

(NORMALIZED)
2N5087
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
FIGURE 19
0.05
P(pk)
0.02
0.03
0.02
t1
0.01
0.01
0.01 0.02
SINGLE PULSE
0.05
0.1
0.2
0.5
1.0
t2
2.0
5.0
10
20
50
t, TIME (ms)
100 200
DUTY CYCLE, D = t1/t2

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN569)
ZJA(t) = r(t) RJA
TJ(pk) TA = P(pk) ZJA(t)
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 k 100 k
Figure 17. Thermal Response
400
200
100 s
100
TC = 25C
dc
60
1.0 s
TA = 25C
40
dc
20
TJ = 150C
10
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
6.0
4.0
10 s
1.0 ms
2.0
4.0
6.0 8.0 10
20
The safe operating area curves indicate ICVCE limits of the

transistor that must be observed for reliable operation. Collector load
lines for specific circuits must fall below the limits indicated by the
applicable curve.
The data of Figure 18 is based upon TJ(pk) = 150C; TC or TA is
variable depending upon conditions. Pulse curves are valid for duty
cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from
the data in Figure 17. At high case or ambient temperatures, thermal
limitations will reduce the power than can be handled to values less
than the limitations imposed by second breakdown.
40
Figure 18. ActiveRegion Safe Operating Area
104
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
IC, COLLECTOR CURRENT (nA)
VCC = 30 V
103
ICEO
102
101
ICBO
AND
ICEX @ VBE(off) = 3.0 V
100
101
102
40 20
+ 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160

TJ, JUNCTION TEMPERATURE (C)
A train of periodical power pulses can be represented by the model

as shown in Figure 19. Using the model and the device thermal
response the normalized effective transient thermal resistance of
Figure 17 was calculated for various duty cycles.
To find ZJA(t), multiply the value obtained from Figure 17 by the
steady state value RJA.
Example:
The 2N5087 is dissipating 2.0 watts peak under the following
conditions:
t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)
Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the reading of
r(t) is 0.22.
The peak rise in junction temperature is therefore
T = r(t) x P(pk) x RJA = 0.22 x 2.0 x 200 = 88C.
For more information, see AN569.
Figure 19. Typical Collector Leakage Current
246
MOTOROLA
Amplifier Transistors
2N5088
2N5089
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
1
2
MAXIMUM RATINGS
Rating
Symbol
2N5088
2N5089
Unit
VCEO
30
25
Vdc
VCBO
35
30
Vdc
VEBO
3.0
Vdc
IC
50
mAdc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
Watts
mW/C
TJ, Tstg
55 to +150
Symbol

Temperature Range
CASE 2904, STYLE 1

TO92 (TO226AA)
Characteristic
Max
Unit
RqJA(1)
200
C/W
RqJC
83.3
C/W

Symbol
Characteristic
Min
Max
30
25
35
30
50
50
50
100
Unit
OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0)
(IC = 100 mAdc, IE = 0)
(VCB = 20 Vdc, IE = 0)
(VCB = 15 Vdc, IE = 0)
V(BR)CEO
2N5088
2N5089
Vdc
V(BR)CBO
2N5088
2N5089
Vdc
ICBO
2N5088
2N5089

(VEB(off) = 3.0 Vdc, IC = 0)
(VEB(off) = 4.5 Vdc, IC = 0)
nAdc
IEBO
nAdc
1. RJA is measured with the device soldered into a typical printed circuit board.
247
2N5088 2N5089
Characteristic
Symbol
Min
Max
2N5088
2N5089
300
400
900
1200
2N5088
2N5089
350
450
(IC = 10 mAdc, VCE = 5.0 Vdc)(2)
2N5088
2N5089
300
400
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 100 Adc, VCE = 5.0 Vdc)
hFE

VCE(sat)
0.5
Vdc

(IC = 10 mAdc, VCE = 5.0 Vdc)(2)
VBE(on)
0.8
Vdc
fT
50
MHz
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Ccb
4.0
pF
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Ceb
10
pF
350
450
1400
1800
3.0
2.0


hfe
2N5088
2N5089
Noise Figure
(IC = 100 Adc, VCE = 5.0 Vdc, RS = 1.0 k,
f = 1.0 kHz)
NF
2N5088
2N5089
dB
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
248
2N5088 2N5089
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25C)
NOISE VOLTAGE
30
30
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
20
RS 0
IC = 10 mA
en , NOISE VOLTAGE (nV)
20
3.0 mA
10
1.0 mA
7.0
5.0
RS 0
f = 10 Hz
10
100 Hz
7.0
10 kHz
1.0 kHz
5.0
300 A
3.0
10
20
50 100 200
3.0
0.01 0.02
500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
f, FREQUENCY (Hz)
Figure 2. Effects of Frequency
IC = 10 mA
3.0 mA
1.0 mA
300 A
100 A
0.3
0.2
RS 0
0.1
10
20
10 A
50 100 200
10
16
3.0
1.0
0.7
0.5
5.0
20
BANDWIDTH = 1.0 Hz
2.0
0.05 0.1 0.2

0.5 1.0
2.0
Figure 3. Effects of Collector Current
10
7.0
5.0
100 kHz
BANDWIDTH = 10 Hz to 15.7 kHz

12
500 A
8.0
IC = 1.0 mA
100 A
10 A
4.0
30 A
0
10
500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
f, FREQUENCY (Hz)
20
50 100 200 500 1 k 2 k

5 k 10 k 20 k 50 k 100 k
Figure 5. Wideband Noise Figure

100 Hz NOISE DATA
20
BANDWIDTH = 1.0 Hz
IC = 10 mA
16
100 A
100
70
50
3.0 mA
1.0 mA
30
300 A
20
10
7.0
5.0
30 A
10 A
VT, TOTAL NOISE VOLTAGE (nV)
300
200
IC = 10 mA
3.0 mA
1.0 mA
12
300 A
8.0
100 A
30 A
4.0
10 A
BANDWIDTH = 1.0 Hz
0
3.0
10
20
50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k

Figure 6. Total Noise Voltage
10
20
50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k

Figure 7. Noise Figure
249
2N5088 2N5089
4.0
3.0
VCE = 5.0 V
2.0
TA = 125C
25C
1.0
55C
0.7
0.5
0.4
0.3
0.2
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
0.4
RVBE, BASEEMITTER
TEMPERATURE COEFFICIENT (mV/ C)
1.0
TJ = 25C
V, VOLTAGE (VOLTS)
0.8
0.6
VBE @ VCE = 5.0 V
0.4
0.2
0.8
1.2
TJ = 25C to 125C
1.6
2.0
55C to 25C
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
50
2.4
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10
100
8.0
C, CAPACITANCE (pF)
6.0
TJ = 25C
Cob
4.0
3.0
Ceb
Cib
Ccb
2.0
1.0
0.8
0.1
0.2
1.0
2.0
5.0
0.5
10
20
250
50 100
50
100
20
500
300
200
100
VCE = 5.0 V
TJ = 25C
70
50
1.0
2.0
3.0
5.0 7.0 10
20 30
50 70 100
MOTOROLA
2N5209
2N5210
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
1
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
50
Vdc
VCBO
50
Vdc
VEBO
4.0
Vdc
IC
50
mAdc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
Watts
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit

Temperature Range
CASE 2904, STYLE 1

TO92 (TO226AA)
Characteristic
RqJA
200
C/W
RqJC
83.3
C/W

Symbol
Min
Max
Unit

(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
50
Vdc

(IC = 0.1 mAdc, IE = 0)
V(BR)CBO
50
Vdc

(VCB = 35 Vdc, IE = 0)
ICBO
50
nAdc

(VEB = 3.0 Vdc, IC = 0)
IEBO
50
nAdc
Characteristic
OFF CHARACTERISTICS
251
2N5209 2N5210
Characteristic
Symbol
Min
Max
2N5209
2N5210
100
200
300
600
2N5209
2N5210
150
250
(IC = 10 mAdc, VCE = 5.0 Vdc)(1)
2N5209
2N5210
150
250
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 100 Adc, VCE = 5.0 Vdc)
hFE

VCE(sat)
0.7
Vdc

(IC = 1.0 mAdc, VCE = 5.0 mAdc)
VBE(on)
0.85
Vdc
fT
30
MHz
Ccb
4.0
pF
150
250
600
900

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
hfe
2N5209
2N5210
Noise Figure
(IC = 20 Adc, VCE = 5.0 Vdc, RS = 22 k,
f = 1.0 kHz)
2N5209
2N5210
NF
3.0
2.0
dB
(IC = 20 Adc, VCE = 5.0 Vdc, RS = 10 k,

f = 1.0 kHz)
2N5209
2N5210
4.0
3.0
RS
in
en
IDEAL
TRANSISTOR
252
2N5209 2N5210
(VCE = 5.0 Vdc, TA = 25C)
NOISE VOLTAGE
30
30
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
20
RS 0
IC = 10 mA
20
3.0 mA
10
1.0 mA
7.0
5.0
RS 0
f = 10 Hz
10
100 Hz
7.0
10 kHz
1.0 kHz
5.0
300 A
3.0
10
20
50 100 200
3.0
0.01 0.02
500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
f, FREQUENCY (Hz)
IC = 10 mA
3.0 mA
1.0 mA
300 A
100 A
0.3
0.2
RS 0
0.1
10
20
10 A
50 100 200
10
16
3.0
1.0
0.7
0.5
5.0
20
BANDWIDTH = 1.0 Hz
2.0
0.05 0.1 0.2

0.5 1.0
2.0
10
7.0
5.0
100 kHz

12
500 A
8.0
IC = 1.0 mA
100 A
10 A
4.0
30 A
0
10
500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
f, FREQUENCY (Hz)
20
50 100 200 500 1 k 2 k

5 k 10 k 20 k 50 k 100 k

100 Hz NOISE DATA
20
BANDWIDTH = 1.0 Hz
IC = 10 mA
16
100 A
100
70
50
3.0 mA
1.0 mA
30
300 A
20
10
7.0
5.0
30 A
10 A
300
200
IC = 10 mA
3.0 mA
1.0 mA
12
300 A
8.0
100 A
30 A
4.0
10 A
BANDWIDTH = 1.0 Hz
0
3.0
10
20
50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k

10
20
50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k

253
2N5209 2N5210
4.0
3.0
VCE = 5.0 V
2.0
TA = 125C
25C
1.0
55C
0.7
0.5
0.4
0.3
0.2
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
0.4
RVBE, BASEEMITTER
1.0
TJ = 25C
V, VOLTAGE (VOLTS)
0.8
0.6
VBE @ VCE = 5.0 V
0.4
0.2
0.8
1.2
TJ = 25C to 125C
1.6
2.0
55C to 25C
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
50
2.4
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10
100
8.0
C, CAPACITANCE (pF)
6.0
TJ = 25C
Cob
4.0
3.0
Ceb
Cib
Ccb
2.0
1.0
0.8
0.1
0.2
1.0
2.0
5.0
0.5
10
20
254
50 100
50
100
20
500
300
200
100
VCE = 5.0 V
TJ = 25C
70
50
1.0
2.0
3.0
5.0 7.0 10
20 30
50 70 100
MOTOROLA
2N5400
2N5401*
PNP Silicon
COLLECTOR
3
2
BASE
1
EMITTER
1
2
MAXIMUM RATINGS
Symbol
2N5400
2N5401
Unit
Rating
VCEO
120
150
Vdc
VCBO
130
160
Vdc
VEBO
5.0
Vdc
IC
600
mAdc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
Watts
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit
RqJA
200
C/W
RqJC
83.3
C/W

Temperature Range
CASE 2904, STYLE 1

TO92 (TO226AA)
Characteristic

Symbol
Characteristic
Min
Max
Unit
120
150
130
160
5.0
Vdc
100
50
100
50
nAdc
50
OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0)
(IC = 100 mAdc, IE = 0)
V(BR)CEO
2N5400
2N5401
V(BR)CBO
2N5400
2N5401

(IE = 10 mAdc, IC = 0)
(VCB = 100 Vdc, IE = 0)
(VCB = 120 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0, TA = 100C)
(VCB = 120 Vdc, IE = 0, TA = 100C)
Vdc
V(BR)EBO
Vdc
ICBO
2N5400
2N5401
2N5400
2N5401

(VEB = 3.0 Vdc, IC = 0)
IEBO
Adc
nAdc

255
2N5400 2N5401
Characteristic
Symbol
Min
Max
2N5400
2N5401
30
50
2N5400
2N5401
40
60
180
240
2N5400
2N5401
40
50
0.2
0.5
1.0
1.0
100
100
400
300
6.0
30
40
200
200
8.0
Unit
DC Current Gain
hFE

VCE(sat)

VBE(sat)
Vdc
Vdc

fT
2N5400
2N5401
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Noise Figure
Cobo
MHz
hfe
2N5400
2N5401
NF
pF
dB
256
2N5400 2N5401
200
150
h FE, CURRENT GAIN
TJ = 125C
100
25C
70
50
55C
VCE = 1.0 V
VCE = 5.0 V
30
20
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
20
10
30
50
100
10
20
50
1.0
0.9
0.8
0.7
0.6
IC = 1.0 mA
0.5
10 mA
30 mA
100 mA
0.4
0.3
0.2
0.1
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
103
102
VCE = 30 V
IC = ICES
101
TJ = 125C
100
75C
101
102
REVERSE
25C
103
0.3
0.2
FORWARD
0.1
0
0.1
0.2 0.3 0.4 0.5
0.6
0.7
257
2N5400 2N5401
1.0
TJ = 25C
0.9
V, VOLTAGE (VOLTS)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.1
0.2 0.3 0.5
1.0 2.0 3.0 5.0

10
20 30
50
2.5
1.5
1.0
0.5
VC for VCE(sat)
0
0.5
1.0
1.5
VB for VBE(sat)
2.0
2.5
0.1
100
TJ = 55C to 135C
2.0
0.2 0.3 0.5 1.0 2.0 3.0 5.0

10
20 30
10.2 V
10 s
INPUT PULSE
tr, tf 10 ns
DUTY CYCLE = 1.0%
0.25 F
3.0 k
RC
Vout
RB
5.1 k
Vin
100
C, CAPACITANCE (pF)
100
70
50
VCC
30 V
100
TJ = 25C
30
Cibo
20
10
7.0
5.0
Cobo
3.0
1N914
2.0
1.0
0.2
0.3
2.0 3.0
5.0 7.0
0.5 0.7 1.0
1000
700
500
20
tr @ VCC = 120 V
1000
700
500
tr @ VCC = 30 V
200
t, TIME (ns)
t, TIME (ns)
10
2000
IC/IB = 10
TJ = 25C
300
100
70
50
VCC = 120 V
20
10
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
20 30
50
300
IC/IB = 10
TJ = 25C
tf @ VCC = 120 V
tf @ VCC = 30 V
200
ts @ VCC = 120 V
100
70
50
30
258
100
VBB
+ 8.8 V
Vin
50
30
100
200
20
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
20 30
50
100
200
MOTOROLA
2N5550
2N5551*
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
2N5550
2N5551
Unit
VCEO
140
160
Vdc
VCBO
160
180
Vdc
VEBO
6.0
Vdc
IC
600
mAdc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
Watts
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit

Temperature Range
CASE 2904, STYLE 1

TO92 (TO226AA)
Characteristic
RqJA
200
C/W
RqJC
83.3
C/W

Symbol
Characteristic
Min
Max
Unit
140
160
160
180
6.0
Vdc
100
50
100
50
nAdc
50
OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0)
(IC = 100 Adc, IE = 0 )
V(BR)CEO
2N5550
2N5551
V(BR)CBO
2N5550
2N5551

(IE = 10 Adc, IC = 0)
(VCB = 100 Vdc, IE = 0)
(VCB = 120 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0, TA = 100C)
(VCB = 120 Vdc, IE = 0, TA = 100C)
Vdc
V(BR)EBO
Vdc
ICBO
2N5550
2N5551
2N5550
2N5551

(VEB = 4.0 Vdc, IC = 0)
IEBO
Adc
nAdc

259
2N5550 2N5551
Characteristic
Symbol
Min
Max
Unit
2N5550
2N5551
60
80
2N5550
2N5551
60
80
250
250
2N5550
2N5551
20
30
Both Types
0.15
2N5550
2N5551
0.25
0.20
Both Types
1.0
2N5550
2N5551
1.2
1.0
fT
100
300
MHz
Cobo
6.0
pF
30
20
50
200
10
8.0
DC Current Gain

hFE
VCE(sat)
Vdc
VBE(sat)
Vdc

Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
2N5550
2N5551

Noise Figure
(IC = 250 Adc, VCE = 5.0 Vdc, RS = 1.0 k,
f = 1.0 kHz)
hfe
pF
NF
2N5550
2N5551
dB
260
2N5550 2N5551
500
300
200
VCE = 1.0 V
VCE = 5.0 V
TJ = 125C
25C
100
55C
50
30
20
10
7.0
5.0
0.1
0.2
0.3
0.5
0.7
1.0
3.0
2.0
5.0
7.0
10
20
30
50
70
100
1.0
0.9
0.8
0.7
0.6
IC = 1.0 mA
10 mA
100 mA
30 mA
0.5
0.4
0.3
0.2
0.1
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
261
2N5550 2N5551
101
VCE = 30 V
100
TJ = 125C
101
102
75C
103
REVERSE
FORWARD
25C
104
105
0.4
IC = ICES
0.2
0
0.1
0.2
0.3
0.4
0.1
0.3
0.5
0.6
1.0
2.5
TJ = 25C
V, VOLTAGE (VOLTS)
0.8
0.6
0.4
0.2
0
0.1
0.2 0.3 0.5

1.0 2.0 3.0 5.0 10 20 30
50
2.0
1.0
qVC for VCE(sat)
0.5
0
0.5
1.0
qVB for VBE(sat)
1.5
2.0
2.5
0.1
100
TJ = 55C to +135C
1.5
0.2 0.3 0.5 1.0 2.0 3.0 5.0

10 20 30
100
10 s
INPUT PULSE
tr, tf 10 ns
DUTY CYCLE = 1.0%
0.25 F
3.0 k
RC
RB
Vout
5.1 k
Vin
100
1N914
262
TJ = 25C
30
C, CAPACITANCE (pF)
VCC
30 V
VBB
8.8 V
Vin
100
100
70
50
10.2 V
50
20
10
Cibo
7.0
5.0
Cobo
3.0
2.0
1.0
0.2
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
2N5550 2N5551
1000
5000
IC/IB = 10
TJ = 25C
500
1000
tr @ VCC = 30 V
100
50
30
VCC = 120 V
500
300
ts @ VCC = 120 V
200
20
10
0.2 0.3 0.5
IC/IB = 10
TJ = 25C
tf @ VCC = 30 V
t, TIME (ns)
t, TIME (ns)
200
2000
tr @ VCC = 120 V
300
tf @ VCC = 120 V
3000
100
1.0
20 30
2.0 3.0 5.0 10
50
100
200
50
0.2 0.3 0.5
20 30 50
1.0 2.0 3.0 5.0
10
100
200
263
MOTOROLA
Darlington Transistors
2N6426*
2N6427
NPN Silicon
COLLECTOR 3
BASE
2
EMITTER 1
1
2
MAXIMUM RATINGS
Symbol
Value
Unit
Rating
VCEO
40
Vdc
VCBO
40
Vdc
VEBO
12
Vdc
IC
500
mAdc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
Watts
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit
RqJA
200
C/W
RqJC
83.3
C/W

Temperature Range
CASE 2904, STYLE 1

TO92 (TO226AA)
Characteristic

Symbol
Min
Typ
Max
Unit

(IC = 10 mAdc, VBE = 0)
V(BR)CEO
40
Vdc

(IC = 100 mAdc, IE = 0)
V(BR)CBO
40
Vdc

(IE = 10 mAdc, IC = 0)
V(BR)EBO
12
Vdc

(VCE = 25 Vdc, IB = 0)
ICES
1.0
mAdc

(VCB= 30 Vdc, IE = 0)
ICBO
50
nAdc

(VEB= 10 Vdc, IC = 0)
IEBO
50
nAdc
Characteristic
OFF CHARACTERISTICS
264
2N6426 2N6427
Symbol
Min
Typ
Max
2N6426
2N6427
20,000
10,000
200,000
100,000
2N6426
2N6427
30,000
20,000
300,000
200,000
2N6426
2N6427
20,000
14,000
200,000
140,000
0.71
0.9
1.2
1.5
Characteristic
Unit
ON CHARACTERISTICS
DC Current Gain(1)
hFE

VCE(sat)
Vdc

VBE(sat)
1.52
2.0
Vdc

VBE(on)
1.24
1.75
Vdc
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
5.4
7.0
pF
Input Capacitance
(VEB = 1.0 Vdc, IC = 0, f = 1.0 MHz)
Cibo
10
15
pF
100
50
2000
1000
20,000
10,000
1.5
1.3
2.4
2.4
Input Impedance
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
hie
2N6426
2N6427

hfe
2N6426
2N6427

(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
|hfe|
2N6426
2N6427
Output Admittance
hoe
1000
mmhos
Noise Figure
(IC = 1.0 mAdc, VCE = 5.0 Vdc, RS = 100 k, f = 1.0 kHz)
NF
3.0
10
dB

RS
in
en
IDEAL
TRANSISTOR
265
2N6426 2N6427
(VCE = 5.0 Vdc, TA = 25C)
500
2.0
BANDWIDTH = 1.0 Hz
RS 0
i n, NOISE CURRENT (pA)
200
BANDWIDTH = 1.0 Hz
100
10 A
50
100 A
20
IC = 1.0 mA
10
1.0
0.7
0.5
IC = 1.0 mA
0.3
0.2
100 A
0.1
0.07
0.05
10 A
0.03
0.02
10 20
5.0
10 20
50 100 200
500 1 k 2 k 5 k 10 k 20 k
f, FREQUENCY (Hz)
50 k 100 k
50 100 200
50 k 100 k
14
200
BANDWIDTH = 10 Hz TO 15.7 kHz

12
100
VT, TOTAL WIDEBAND NOISE VOLTAGE (nV)
500 1 k 2 k 5 k 10 k 20 k
f, FREQUENCY (Hz)
IC = 10 A
70
50
100 A
30
20
1.0 mA
10
1.0
2.0
10 A
8.0
100 A
6.0
4.0
IC = 1.0 mA
2.0
5.0
10
20
50 100 200
500
Figure 4. Total Wideband Noise Voltage
266
10
100
0
0
1.0
2.0
5.0
10
20
50 100 200
500
100
0
2N6426 2N6427
SMALLSIGNALCHARACTERISTICS
20
|h fe |, SMALLSIGNAL CURRENT GAIN
4.0
TJ = 25C
C, CAPACITANCE (pF)
10
7.0
Cibo
Cobo
5.0
3.0
2.0
0.04
0.1
0.2
0.4
1.0 2.0 4.0
10
20
2.0
1.0
0.8
0.6
0.4
0.2
0.5
40
200 k
hFE, DC CURRENT GAIN
TJ = 125C
25C
30 k
20 k
10 k
7.0 k
5.0 k
55C
VCE = 5.0 V
3.0 k
2.0 k
5.0 7.0
10
20 30
50 70 100
200 300
500
RV, TEMPERATURE COEFFICIENTS (mV/C)
TJ = 25C
V, VOLTAGE (VOLTS)
1.4
1.2
1.0
0.8
0.6
20 30
50 70 100 200 300
0.5 10 20
50
100 200
500
TJ = 25C
2.5
IC = 10 mA
50 mA
250 mA
500 mA
2.0
1.5
1.0
0.5
0.1 0.2
0.5 1.0 2.0 5.0 10 20 50 100 200

IB, BASE CURRENT (A)
500 1000
1.6
10
2.0
3.0
5.0 7.0
1.0
Figure 7. High Frequency Current Gain
100 k
70 k
50 k
VCE = 5.0 V
f = 100 MHz
TJ = 25C
500
1.0
2.0
*APPLIES FOR IC/IB hFE/3.0
25C TO 125C
*RqVC FOR VCE(sat)

55C TO 25C
3.0
25C TO 125C
4.0
qVB FOR VBE

5.0
55C TO 25C
6.0
5.0 7.0 10
20 30
50 70 100
200 300
500
267
2N6426 2N6427
r(t), TRANSIENT THERMAL

RESISTANCE (NORMALIZED)
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
0.05
SINGLE PULSE
0.1
0.07
0.05
SINGLE PULSE
ZJC(t) = r(t) RJC TJ(pk) TC = P(pk) ZJC(t)
ZJA(t) = r(t) RJA TJ(pk) TA = P(pk) ZJA(t)
0.03
0.02
0.01
0.1
0.2
0.5
1.0
2.0
10
5.0
20
50
t, TIME (ms)
100
200
500
1.0 k
2.0 k
5.0 k
10 k
1.0 k
700
500
300
200
tP
TA = 25C
TC = 25C
100 s
PP
1.0 s
100
70
50
PP
t1
30
CURRENT LIMIT
THERMAL LIMIT
20
10
0.4 0.6
1/f
DUTY CYCLE
1.0
2.0
4.0 6.0
10
20
Figure 13. Active Region Safe Operating Area
268
FIGURE A
1.0 ms
40
+ t1 f + ttP1
PEAK PULSE POWER = PP
Design Note: Use of Transient Thermal Resistance Data
MOTOROLA
High Voltage Transistors
NPN
2N6515
2N6517
PNP
2N6519
2N6520
COLLECTOR
3
COLLECTOR
3
2
BASE
2
BASE
NPN
PNP
1
EMITTER
1
EMITTER
MAXIMUM RATINGS
Symbol
2N6515
2N6519
2N6517
2N6520
Unit
VCEO
250
300
350
Vdc
VCBO
250
300
350
Vdc

2N6515, 2N6516, 2N6517
2N6519, 2N6520
VEBO
Rating
Vdc
6.0
5.0
Base Current
IB
250
mAdc
IC
500
mAdc
Total Device Dissipation

@ TA = 25C
Derate above 25C
PD
625
5.0
mW
mW/C

@ TC = 25C
Derate above 25C
PD
1.5
12
Watts
mW/C
TJ, Tstg
55 to +150

Temperature Range
Voltage and current are negative

for PNP transistors
1
2
CASE 2904, STYLE 1

TO92 (TO226AA)
Characteristic
Symbol
Max
Unit
RqJA
200
C/W
RqJC
83.3
C/W

Symbol
Characteristic
Min
Max
250
300
350
250
300
350
6.0
5.0
Unit
OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0)

(IC = 100 Adc, IE = 0 )

(IE = 10 Adc, IC = 0)
V(BR)CEO
2N6515
2N6519
2N6517, 2N6520
Vdc
V(BR)CBO
2N6515
2N6519
2N6517, 2N6520
Vdc
V(BR)EBO
2N6515, 2N6517
2N6519, 2N6520
Vdc
REV 1
269
NPN 2N6515 2N6517 PNP 2N6519 2N6520

Characteristic
Symbol
Min
Max
50
50
50
50
50
2N6515
2N6519
2N6517, 2N6520
35
30
20
(IC = 10 mAdc, VCE = 10 Vdc)
2N6515
2N6519
2N6517, 2N6520
50
45
30
2N6515
2N6519
2N6517, 2N6520
50
45
30
300
270
200
2N6515
2N6519
2N6517, 2N6520
45
40
20
220
200
200
2N6515
2N6519
2N6517, 2N6520
25
20
15
0.30
0.35
0.50
1.0
0.75
0.85
0.90
Unit
OFF CHARACTERISTICS (Continued)

(VCB = 150 Vdc, IE = 0)
(VCB = 200 Vdc, IE = 0)
(VCB = 250 Vdc, IE = 0)
2N6515
2N6519
2N6517, 2N6520
ICBO

(VEB = 5.0 Vdc, IC = 0)
(VEB = 4.0 Vdc, IC = 0)
2N6515, 2N6517
2N6519, 2N6520
nAdc
IEBO
nAdc
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc)
hFE

VCE(sat)
Vdc

VBE(sat)
BaseEmitter On Voltage
VBE(on)
2.0
Vdc
fT
40
200
MHz
Ccb
6.0
pF
80
100
Vdc

(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Ceb
2N6515, 2N6517
2N6519, 2N6520
pF
TurnOn Time
(VCC = 100 Vdc, VBE(off) = 2.0 Vdc, IC = 50 mAdc, IB1 = 10 mAdc)
ton
200
TurnOff Time
(VCC = 100 Vdc, IC = 50 mAdc, IB1 = IB2 = 10 mAdc)
toff
3.5
270
NPN 2N6515 2N6517 PNP 2N6519 2N6520

NPN
PNP
2N6515
2N6519
200
VCE = 10 V
TJ = 125C
100
200
25C
70
55C
50
30
20
1.0
VCE = 10 V
TJ = 125C
25C
100
70
55C
50
30
2.0
3.0
5.0 7.0 10
20 30
50
20
1.0
70 100
2.0 3.0 5.0 7.0 10

20 30
50 70 100
2N6517
2N6520
200
200
TJ = 125C
VCE = 10 V
100
hFE , DC CURRENT GAIN
VCE = 10 V
25C
70
50
55C
30
20
10
1.0
2.0
3.0
5.0 7.0 10
20 30
100
25C
70
55C
50
30
20
10
1.0
50 70 100
TJ = 125C
2.0 3.0 5.0 7.0 10

20 30
50 70 100
2N6515, 2N6517
100
70
50
TJ = 25C
VCE = 20 V
f = 20 MHz
30
20
10
1.0
2.0
3.0
5.0 7.0 10
20 30
50 70
100
2N6519, 2N6520
100
70
50
TJ = 25C
VCE = 20 V
f = 20 MHz
30
20
10
1.0
2.0 3.0 5.0 7.0 10

20 30
50 70 100
271
NPN 2N6515 2N6517 PNP 2N6519 2N6520

NPN
PNP
2N6515, 2N6517
2N6519, 2N6520
1.4
1.4
TJ = 25C
1.2
1.2
0.8
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
1.0
0.6
VBE(on) @ VCE = 10 V
0.4
0.2
0
1.0
3.0
1.0
0.8
0.6
0.4
0.2
2.0
TJ = 25C
VCE(sat) @ IC/IB = 5.0

5.0 7.0 10
20 30
50 70 100
2.0 3.0 5.0 7.0 10
20 30 50 70 100
0
1.0
IC
IB
2.0
1.5
+ 10
25C to 125C
1.0
0.5
0
2N6519, 2N6520
2N6515, 2N6517
2.5
RVC for VCE(sat)

55C to 25C
0.5
1.0
1.5
2.0
2.5
1.0
55C to 125C
RVB for VBE
2.0
3.0
5.0 7.0 10
20 30
50
70
100
2.5
IC
IB
2.0
1.5
+ 10
25C to 125C
1.0
0.5
RVB for VBE
55C to 25C
0
0.5
1.0
1.5
RVC for VCE(sat)
55C to 125C
2.0
2.5
1.0
2.0 3.0 5.0 7.0 10

20 30
50 70 100
2N6515, 2N6517
2N6519, 2N6520
100
70
50
TJ = 25C
Ceb
30
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
100
70
50
20
10
7.0
5.0
Ccb
20
10
7.0
5.0
3.0
2.0
2.0
0.5
1.0 2.0
5.0
10
20
50 100 200
TJ = 25C
30
3.0
1.0
0.2
Ceb
1.0
0.2
Ccb
0.5 1.0 2.0

5.0 10 20
50 100 200
272
NPN 2N6515 2N6517 PNP 2N6519 2N6520

NPN
PNP
2N6515, 2N6517
1.0 k
700
500
2N6519, 2N6520
1.0 k
700
500
VCE(off) = 100 V
IC/IB = 5.0
TJ = 25C
300
300
200
t, TIME (ns)
t, TIME (ns)
200
tr
100
70
50
30
30
20
2.0
3.0
5.0 7.0 10
20 30
50
70 100
tr
100
70
50
20
10
1.0
VCE(off) = 100 V
IC/IB = 5.0
TJ = 25C
10
1.0
2.0 3.0 5.0 7.0 10

20 30
50 70 100
2N6515, 2N6517
10 k
7.0 k
5.0 k
2N6519, 2N6520
2.0 k
ts
ts
1.0 k
700
3.0 k
500
t, TIME (ns)
2.0 k
1.0 k
700
500
tf
300
VCE(off) = 100 V
IC/IB = 5.0
IB1 = IB2
TJ = 25C
200
tf
VCE(off) = 100 V
IC/IB = 5.0
IB1 = IB2
TJ = 25C
100
70
50
300
200
30
100
1.0
2.0 3.0
5.0 7.0 10
20 30
50
70 100
20
1.0
2.0 3.0 5.0 7.0 10

20 30
50 70 100
273
NPN 2N6515 2N6517 PNP 2N6519 2N6520

+VCC
VCC ADJUSTED
FOR VCE(off) = 100 V
+10.8 V
2.2 k
20 k
50 SAMPLING SCOPE
1.0 k
50
1/2MSD7000
9.2 V
PULSE WIDTH 100 s
tr, tf 5.0 ns
DUTY CYCLE 1.0%
FOR PNP TEST CIRCUIT,
REVERSE ALL VOLTAGE POLARITIES
APPROXIMATELY
1.35 V
(ADJUST FOR V(BE)off = 2.0 V)

1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
SINGLE PULSE
0.05
0.1
0.1
0.07
0.05
SINGLE PULSE
0.03
0.02
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
t, TIME (ms)
100
200
500
1.0 k
2.0 k
5.0 k
10 k
500
TA = 25C
200
100
tP
1.0 ms
TC = 25C
50
FIGURE A
10 s
100 s
PP
PP
100 ms
20
CURRENT LIMIT
THERMAL LIMIT
(PULSE CURVES @ TC = 25C)
10
5.0
2.0
CURVES APPLY
BELOW RATED VCEO
1.0
0.5
0.5
1.0
2N6515
2N6519
2N6517, 2N6520
2.0
5.0
10
20
50 100 200
274
t1
1/f
DUTY CYCLE
500
+ t1 f + ttP1
MOTOROLA
PNP Silicon General Purpose

2SA1774
This PNP transistor is designed for general purpose amplifier applications. This
device is housed in the SOT416/SC90 package which is designed for low power
surface mount applications, where board space is at a premium.
PNP GENERAL
PURPOSE AMPLIFIER
TRANSISTORS
SURFACE MOUNT
Reduces Board Space

High hFE, 210 460 (typical)
Low VCE(sat), < 0.5 V
Available in 8 mm, 7inch/3000 Unit Tape and Reel
MAXIMUM RATINGS (TA = 25C)
2
1
Symbol
Value
Unit
CollectorBase Voltage
V(BR)CBO
60
Vdc
CollectorEmitter Voltage
V(BR)CEO
50
Vdc
EmitterBase Voltage
V(BR)EBO
6.0
Vdc
IC
100
mAdc
Symbol
Max
Unit
PD
150
mW
TJ
150
Tstg
55 ~ + 150
Rating
CASE 46301, STYLE 1

SOT416/SC90
COLLECTOR
3
DEVICE MARKING
2SA1774 = F9
Rating
Power Dissipation(1)
Junction Temperature
Storage Temperature Range
1
BASE
2
EMITTER
ELECTRICAL CHARACTERISTICS (TA = 25C)

Symbol
Min
Typ
Max
Unit
CollectorBase Breakdown Voltage (IC = 50 Adc, IE = 0)
V(BR)CBO
60
Vdc
CollectorEmitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0)
V(BR)CEO
50
Vdc
EmitterBase Breakdown Voltage (IE = 50 Adc, IE = 0)
Characteristic
V(BR)EBO
6.0
Vdc
CollectorBase Cutoff Current (VCB = 30 Vdc, IE = 0)
ICBO
0.5
nA
EmitterBase Cutoff Current (VEB = 5.0 Vdc, IB = 0)
IEBO
0.5
0.5
120
560
140
3.5
CollectorEmitter Saturation Voltage(2)

DC Current Gain(2)
(VCE = 6.0 Vdc, IC = 1.0 mAdc)
VCE(sat)
hFE
Transition Frequency
(VCE = 12 Vdc, IC = 2.0 mAdc, f = 30 MHz)
Output Capacitance (VCB = 12 Vdc, IE = 0 Adc, f = 1 MHz)
Vdc
fT
COB
MHz
pF
1. Device mounted on a FR4 glass epoxy printed circuit board using the minimum recommended footprint.
2. Pulse Test: Pulse Width 300 s, D.C. 2%.
REV 1
275
2SA1774
TYPICAL ELECTRICAL CHARACTERISTICS
1000
VCE = 10 V
90
300 A
250
200
60
150
IB = 50 A
0
12
10
0.1
15
10
100
Figure 1. IC VCE

900
TA = 25C
800
COLLECTOR VOLTAGE (mV)
VCE , COLLECTOR-EMITTER VOLTAGE (V)
VCE, COLLECTOR VOLTAGE (V)
1.5
0.5
700
600
500
400
300
TA = 25C
VCE = 5 V
200
100
0
0.01
0.1
10
0
0.2
100
10
20
40
60
80
Figure 4. On Voltage
14
12
12
11
10
9
8
7
100
150 200
10
8
6
4
2
2
VEB (V)
276
13
0.5
Cob, CAPACITANCE (pF)
Cib, INPUT CAPACITANCE (pF)
TA = 25C
100
100
30
0
TA = 25C
TA = 75C
DC CURRENT GAIN
TA = 25C
120
10
20
30
40
VCB (V)
MOTOROLA
2SC4617
Preliminary Information
NPN Silicon General Purpose

NPN GENERAL
PURPOSE AMPLIFIER
TRANSISTORS
SURFACE MOUNT
This NPN transistor is designed for general purpose amplifier applications.

This device is housed in the SOT-416/SC90 package which is designed for
low power surface mount applications, where board space is at a premium.
Reduces Board Space
High hFE, 210 460 (typical)
Available in 8 mm, 7-inch/3000 Unit Tape and Reel
3
2
Symbol
Value
Unit
Collector-Base Voltage
V(BR)CBO
50
Vdc
Collector-Emitter Voltage
V(BR)CEO
50
Vdc
Emitter-Base Voltage
V(BR)EBO
5.0
Vdc
IC
100
mAdc
Symbol
Max
Unit
PD
125
mW
TJ
150
Tstg
55 ~ + 150
Rating
CASE 46301, STYLE 1

SOT416/SC90
COLLECTOR
3
DEVICE MARKING
2SC4617 = B9
Rating
1
BASE
2
EMITTER

Characteristic
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage (IC = 50 Adc, IE = 0)
V(BR)CBO
50
Vdc
Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0)
V(BR)CEO
50
Vdc
Emitter-Base Breakdown Voltage (IE = 50 Adc, IE = 0)
V(BR)EBO
5.0
Vdc
Collector-Base Cutoff Current (VCB = 30 Vdc, IE = 0)
ICBO
0.5
Emitter-Base Cutoff Current (VEB = 4.0 Vdc, IB = 0)
IEBO
0.5
0.4
120
560
fT
180
MHz
COB
2.0
pF
Collector-Emitter Saturation Voltage(2)

VCE(sat)
DC Current Gain(2)
Transition Frequency (VCE = 12 Vdc, IC = 2.0 mAdc, f = 30 MHz)
Output Capacitance (VCB = 12 Vdc, IC = 0 Adc, f = 1 MHz)
Vdc
hFE
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
277
2SC4617
60
1000
160 A
50
140 A
40
120 A
100 A
30
80 A
60 A
20
40 A
10
0
TA = 25C
100
IB = 20 A
0
2
4
6
10
0.1
1
10
100
Figure 1. IC VCE

900
TA = 25C
800
1.5
0.5
700
600
500
400
TA = 25C
VCE = 5 V
300
200
100
0
0.01
0.1
1
10
0
0.2
100
10
20
40
60
80
100
150 200
7
6
18
16
14
12
278
20
10
0.5
VCE = 10 V
TA = 25C
TA = 75C
DC CURRENT GAIN
TA = 25C
5
4
3
2
10
20
VEB (V)
VCB (V)
30
40
MOTOROLA
BC182,A,B
NPN Silicon
BC183
BC184
COLLECTOR
1
2
BASE
3
EMITTER
1
MAXIMUM RATINGS
Rating
Symbol
BC182
BC183
BC184
Unit
VCEO
50
30
30
Vdc
VCBO
60
45
45
Vdc
VEBO
6.0
Vdc
IC
100
mAdc

Derate above 25C
PD
350
2.8
mW
mW/C

Derate above 25C
PD
1.0
8.0
Watts
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit
RqJA
357
C/W
RqJC
125
C/W

Temperature Range
CASE 2904, STYLE 17

TO92 (TO226AA)
Characteristic

Characteristic
Symbol
Min
Typ
Max
50
30
30
60
45
45
6.0
0.2
0.2
0.2
15
15
15
15
Unit
OFF CHARACTERISTICS
(IC = 2.0 mA, IB = 0)

(IC = 10 mA, IE = 0)
V(BR)CEO
BC182
BC183
BC184
V(BR)CBO
BC182
BC183
BC184

(IE = 100 mA, IC = 0)
(VCB = 50 V, VBE = 0)
(VCB = 30 V, VBE = 0)
V(BR)EBO
ICBO
BC182
BC183
BC184
EmitterBase Leakage Current

(VEB = 4.0 V, IC = 0)
IEBO
V
nA
nA
279
BC182,A,B BC183 BC184

Characteristic
Symbol
Min
Typ
Max
BC182
BC183
BC184
40
40
100
(IC = 2.0 mA, VCE = 5.0 V)
BC182
BC183
BC184
120
120
250
500
800
800
(IC = 100 mA, VCE = 5.0 V)
BC182
BC183
BC184
80
80
130
0.07
0.2
0.25
0.6
1.2
0.55
0.5
0.62
0.83
0.7
BC182
BC183
BC184
100
120
140
BC182
BC183
BC184
150
150
150
200
240
280
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 10 A, VCE = 5.0 V)
hFE
Collector Emitter On Voltage

(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)(1)
VCE(sat)

(IC = 100 mA, IB = 5.0 mA)(1)
VBE(sat)
(IC = 100 A, VCE = 5.0 V)
(IC = 2.0 mA, VCE = 5.0 V)
(IC = 100 mA, VCE = 5.0 V)(1)
VBE(on)
V
V
(IC = 0.5 mA, VCE = 3.0 V, f = 100 MHz)
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
fT
MHz
Common Base Output Capacitance

(VCB = 10 V, IC = 0, f = 1.0 MHz)
Cob
5.0
pF
Common Base Input Capacitance

(VEB = 0.5 V, IC = 0, f = 1.0 MHz)
Cib
8.0
pF
125
125
240
125
240
500
900
900
260
500

(IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz)
Noise Figure
(IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 k,
f = 1.0 kHz)
(IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 k,
f = 1.0 kHz, f = 200 Hz)
hfe
BC182
BC183
BC184
BC182A
BC182B
NF
BC184
BC182
BC183
BC184
dB
2.0
2.0
2.0
2.0
4.0
10
10
4.0
1. Pulse Test: Tp 300 s, Duty Cycle 2.0%.
280
BC182,A,B BC183 BC184
1.0
VCE = 10 V
TA = 25C
1.5
0.9
0.8
V, VOLTAGE (VOLTS)
hFE, NORMALIZED DC CURRENT GAIN
2.0
1.0
0.8
0.6
0.4
0.7
0.6
0.5
0.4
0.3
0.2
0.3
0.1
0.2
0.2
0.5
1.0
2.0
5.0
10
20
50
100
0
0.1
200
Figure 1. Normalized DC Current Gain
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10

20 30
50 70 100
Figure 2. Saturation and On Voltages
10
400
300
7.0
200
C, CAPACITANCE (pF)
TA = 25C
VCE = 10 V
TA = 25C
100
80
60
TA = 25C
Cib
5.0
3.0
Cob
2.0
40
30
20
0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
20
30
50
1.0
0.4
0.6 0.8 1.0
r b, BASE SPREADING RESISTANCE (OHMS)
2.0
4.0 6.0 8.0 10
20
40
170
160
150
VCE = 10 V
f = 1.0 kHz
TA = 25C
140
130
120
0.1
0.2
0.3
0.5
1.0
2.0 3.0
5.0
10
Figure 5. Base Spreading Resistance
281
MOTOROLA
BC212,B
PNP Silicon
BC213
BC214
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
BC212
BC213
BC214
Unit
VCEO
50
30
30
Vdc
VCBO
60
45
45
Vdc
VEBO
5.0
Vdc
IC
100
mAdc

Derate above 25C
PD
350
2.8
mW
mW/C

Derate above 25C
PD
1.0
8.0
Watts
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit
RqJA
357
C/W
RqJC
125
C/W

Temperature Range
CASE 2904, STYLE 17

TO92 (TO226AA)
Characteristic

Characteristic
Symbol
Min
Typ
Max
Unit

(IC = 2.0 mAdc, IB = 0)
BC212
BC213
BC214
V(BR)CEO
50
30
30
Vdc

(IC = 10 mA, IE = 0)
BC212
BC213
BC214
V(BR)CBO
60
45
45
Vdc

(IE = 10 mAdc, IC = 0)
BC212
BC213
BC214
V(BR)EBO
5
5
5
Vdc
CollectorEmitter Leakage Current

(VCB = 30 V)
BC212
BC213
BC214
ICBO
15
15
15
nAdc
EmitterBase Leakage Current

(VEB = 4.0 V, IC = 0)
BC212
BC213
BC214
IEBO
15
15
15
nAdc
282
BC212,B BC213 BC214

Characteristic
Symbol
Min
Typ
Max
BC212
BC213
BC214
40
40
100
BC212
BC213
BC214
60
80
140
600
(IC = 100 mAdc, VCE = 5.0 Vdc)(1)
BC212, BC214
BC213
120
140
0.10
0.25
0.6
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 10 Adc, VCE = 5.0 Vdc)
hFE

(IC = 100 mAdc, IB = 5.0 mAdc)(1)
VCE(sat)
Vdc

VBE(sat)
1.0
1.4
Vdc
VBE(on)
0.6
0.62
0.72
Vdc
280
320
360
6.0
fT
BC212
BC214
BC213
CommonBase Output Capacitance

(VCB = 10 Vdc, IC = 0, f = 1.0 MHz)
Cob
Noise Figure
(IC = 0.2 mAdc, VCE = 5.0 Vdc,
RS = 2.0 k , f = 1.0 kHz)
(IC = 0.2 mAdc, VCE = 5.0 Vdc,
RS = 2.0 k, f = 1.0 kHz, f = 200 Hz)
NF

MHz
dB
BC214
BC212, BC213
10
60
80
140
200
400
hfe
BC212
BC213
BC214
BC212B
pF
1. Pulse Test: Tp 300 s, Duty Cycle 2.0%.
283
BC212,B BC213 BC214
1.0
VCE = 10 V
TA = 25C
1.5
0.9
1.0
0.7
0.5
0.7
0.6
0.5
0.4
0.3
0.1
0
0.1 0.2
0.5 1.0 2.0

5.0 10 20
50 100 200
0.5 1.0 2.0

5.0 10 20
50 100
10
400
300
Cib
7.0
200
C, CAPACITANCE (pF)
0.2
0.3
0.2
0.2
VCE = 10 V
TA = 25C
150
100
80
60
5.0
TA = 25C
3.0
Cob
2.0
40
30
20
0.5
1.0
2.0 3.0 5.0

10
20 30
1.0
0.4 0.6
50
0.5
0.3
VCE = 10 V
f = 1.0 kHz
TA = 25C
0.1
0.05
0.03
0.01
0.1
0.2
0.5
1.0
2.0
284
5.0
10
1.0
2.0
4.0 6.0 10
20 30 40
1.0
hob, OUTPUT ADMITTANCE (OHMS)
TA = 25C
0.8
V, VOLTAGE (VOLTS)
2.0
150
140
130
VCE = 10 V
f = 1.0 kHz
TA = 25C
120
110
100
0.1
0.2 0.3 0.5

1.0
2.0 3.0
5.0
10
MOTOROLA
BC237,A,B,C
NPN Silicon
BC238B,C
BC239,C
COLLECTOR
1
2
BASE
3
EMITTER
1
MAXIMUM RATINGS
Rating
Symbol
BC237
BC238
BC239
Unit
VCEO
45
25
25
Vdc
VCES
50
30
30
Vdc
VEBO
6.0
5.0
5.0
CASE 2904, STYLE 17

TO92 (TO226AA)
Vdc
IC
100
mAdc

Derate above 25C
PD
350
2.8
mW
mW/C

Derate above 25C
PD
1.0
8.0
Watts
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit
RqJA
357
C/W
RqJC
125
C/W

Temperature Range
Characteristic

Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
(IC = 2.0 mA, IB = 0)
BC237
BC238
BC239
V(BR)CEO
45
25
25

(IE = 100 mA, IC = 0)
BC237
BC238
BC239
V(BR)EBO
6.0
5.0
5.0
BC238
BC239
0.2
0.2
15
15
nA
(VCE = 50 V, VBE = 0)
BC237
0.2
15
(VCE = 30 V, VBE = 0) TA = 125C
BC238
BC239
0.2
0.2
4.0
4.0
(VCE = 50 V, VBE = 0) TA = 125C
BC237
0.2
4.0

(VCE = 30 V, VBE = 0)
ICES
REV 1
285
BC237,A,B,C BC238B,C BC239,C

Characteristic
Symbol
Min
Typ
Max
BC237A
BC237B/238B
BC237C/238C/239C
90
150
270
(IC = 2.0 mA, VCE = 5.0 V)
BC237
BC239
BC237A
BC237B/238B
BC237C/238C/239C
120
120
120
200
380
170
290
500
800
800
220
460
800
(IC = 100 mA, VCE = 5.0 V)
BC237A
BC237B/238B
BC237C/238C/239C
120
180
300
0.07
0.2
0.2
0.6
0.8
0.6
0.83
1.05
0.55
0.5
0.62
0.83
0.7
BC237
BC238
BC239
100
120
140
BC237
BC238
BC239
150
150
150
200
240
280
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 10 A, VCE = 5.0 V)
Collector Emitter On Voltage

(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
hFE
VCE(sat)
BC237/BC238/BC239
BC237/BC239
BC238

(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
VBE(sat)
(IC = 100 A, VCE = 5.0 V)
(IC = 2.0 mA, VCE = 5.0 V)
(IC = 100 mA, VCE = 5.0 V)
VBE(on)
(IC = 0.5 mA, VCE = 3.0 V, f = 100 MHz)
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
fT
MHz
(VCB = 10 V, IC = 0, f = 1.0 MHz)
Cobo
4.5
pF
(VEB = 0.5 V, IC = 0, f = 1.0 MHz)
Cibo
8.0
pF
Noise Figure
(IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 k,
f = 1.0 kHz)
(IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 k,
f = 1.0 kHz, f = 200 Hz)
286
NF
dB
BC239
BC237
BC238
BC239
2.0
4.0
2.0
2.0
2.0
10
10
4.0
BC237,A,B,C BC238B,C BC239,C
1.0
VCE = 10 V
TA = 25C
1.5
0.9
0.8
V, VOLTAGE (VOLTS)
2.0
1.0
0.8
0.6
0.4
0.7
0.6
0.5
0.4
0.3
0.2
0.3
0.1
0.2
0.2
0.5
1.0
2.0
5.0
10
20
50
100
0
0.1
200
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10

20 30
50 70 100
10
400
300
7.0
200
C, CAPACITANCE (pF)
TA = 25C
VCE = 10 V
TA = 25C
100
80
60
TA = 25C
Cib
5.0
3.0
Cob
2.0
40
30
20
0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
20
30
50
1.0
0.4
0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
20
40
170
160
150
VCE = 10 V
f = 1.0 kHz
TA = 25C
140
130
120
0.1
0.2
0.3
0.5
1.0
2.0 3.0
5.0
10
287
MOTOROLA
BC307
BC307B
BC307C
BC308C
PNP Silicon
COLLECTOR
1
2
BASE
3
EMITTER
1
2
CASE 2904, STYLE 17

TO92 (TO226AA)
MAXIMUM RATINGS
Rating
Symbol
BC307, B, C
BC308C
Unit
VCEO
45
25
Vdc
VCBO
50
30
Vdc
VEBO
5.0
Vdc
IC
100
mAdc

Derate above 25C
PD
350
2.8
mW
mW/C

Derate above 25C
PD
1.0
8.0
Watts
mW/C
TJ, Tstg
55 to +150

Temperature Range
Symbol
Max
Unit
Characteristic
RqJA
357
C/W
RqJC
125
C/W

Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
(IC = 2.0 mAdc, IB = 0)
BC307,B,C
BC308C
V(BR)CEO
45
25
Vdc

(IE = 100 mAdc, IC = 0)
BC307,B,C
BC308C
V(BR)EBO
5.0
5.0
Vdc

(VCES = 50 V, VBE = 0)
(VCES = 30 V, VBE = 0)
(VCES = 50 V, VBE = 0) TA = 125C
(VCES = 30 V, VBE = 0) TA = 125C
BC307,B,C
BC308C
BC307,B,C
BC308C
0.2
0.2
0.2
0.2
15
15
4.0
4.0
nAdc
ICES
A
REV 1
288
BC307 BC307B BC307C BC308C

Characteristic
Symbol
Min
Typ
Max
BC307B
BC307C/308C
150
270
BC307
BC307B/308B
BC307C/308C
120
200
420
290
500
800
460
800
BC307B
BC307C/308C
180
300
0.10
0.30
0.25
0.3
0.6
0.7
1.0
0.55
0.62
0.7
280
320
6.0
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 10 Adc, VCE = 5.0 Vdc)
hFE

(IC = 10 mAdc, IB = see Note 1)
VCE(sat)

VBE(sat)
VBE(on)
Vdc
Vdc
Vdc
fT
BC307,B,C
BC308C
Common Base Capacitance

(VCB = 10 Vdc, IC = 0, f = 1.0 MHz)
Noise Figure
(IC = 0.2 mAdc, VCE = 5.0 Vdc, RS = 2.0 k,
f = 1.0 kHz)
(IC = 0.2 mAdc, VCE = 5.0 Vdc, RS = 2.0 k,
f = 1.0 kHz, f = 200 Hz)
Ccbo
MHz
NF
pF
dB
BC307,B,C
2.0
10
BC308C
2.0
10
1. IC = 10 mAdc on the constant base current characteristic, which yields the point IC = 11 mAdc, VCE = 1.0 V.
289
BC307 BC307B BC307C BC308C

TYPICAL CHARACTERISTICS
1.0
VCE = 10 V
TA = 25C
1.5
0.9
1.0
0.7
0.5
0.7
0.6
0.5
0.4
0.3
0.1
0
0.1 0.2
0.5 1.0 2.0

5.0 10 20
50 100 200
0.5 1.0 2.0

5.0 10 20
50 100
10
400
300
Cib
7.0
200
C, CAPACITANCE (pF)
0.2
0.3
0.2
0.2
VCE = 10 V
TA = 25C
150
100
80
60
5.0
TA = 25C
3.0
Cob
2.0
40
30
20
0.5
1.0
2.0 3.0 5.0

10
20 30
1.0
0.4 0.6
50
0.5
0.3
VCE = 10 V
f = 1.0 kHz
TA = 25C
0.1
0.05
0.03
0.01
0.1
0.2
0.5
1.0
2.0
290
5.0
10
1.0
2.0
4.0 6.0 10
20 30 40
1.0
hob, OUTPUT ADMITTANCE (OHMS)
TA = 25C
0.8
V, VOLTAGE (VOLTS)
2.0
150
140
130
VCE = 10 V
f = 1.0 kHz
TA = 25C
120
110
100
0.1
0.2 0.3 0.5

1.0
2.0 3.0
5.0
10
MOTOROLA
PNP Silicon
BC327,-16,-25
BC328,-16,-25
COLLECTOR
1
2
BASE
3
EMITTER
MAXIMUM RATINGS
Rating
Symbol
BC327
BC328
Unit
VCEO
45
25
Vdc
VCBO
50
30
Vdc
VEBO
5.0
Vdc
IC
800
mAdc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
Watt
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit

Temperature Range
CASE 2904, STYLE 17

TO92 (TO226AA)
Characteristic
RqJA
200
C/W
RqJC
83.3
C/W

Characteristic
Symbol
Min
Typ
Max
45
25
50
30
5.0
100
100
100
100
100
Unit
OFF CHARACTERISTICS
(IC = 10 mA, IB = 0)
(IC = 100 A, IE = 0)
V(BR)CEO
BC327
BC328
Vdc
V(BR)CES
BC327
BC328

(IE = 10 mA, IC = 0)
V(BR)EBO

(VCB = 30 V, IE = 0)
(VCB = 20 V, IE = 0)
BC327
BC328

(VCE = 45 V, VBE = 0)
(VCE = 25 V, VBE = 0)
BC327
BC328
Vdc
ICBO
nAdc
ICES

(VEB = 4.0 V, IC = 0)
IEBO
Vdc
nAdc
nAdc
291
BC327,-16,-25 BC328,-16,-25

Characteristic
Symbol
Min
Typ
Max
100
100
160
40
630
250
400
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mA, VCE = 1.0 V)
hFE
BC327/BC328
BC32716/BC32816
BC32725/BC32825
(IC = 300 mA, VCE = 1.0 V)

(IC = 300 mA, VCE = 1.0 V)
VBE(on)
1.2
Vdc

(IC = 500 mA, IB = 50 mA)
VCE(sat)
0.7
Vdc
Cob
11
pF
fT
260
MHz
Output Capacitance
(VCB = 10 V, IE = 0, f = 1.0 MHz)
r(t), NORMALIZED EFFECTIVE TRANSIENT

THERMAL RESISTANCE

(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1 0.05
0.07 0.02
0.05
P(pk)
SINGLE PULSE
0.01
0.03
t1
t2
SINGLE PULSE
0.02
0.01
0.001
JC(t) = (t) JC
JC = 100C/W MAX
JA(t) = r(t) JA
JA = 375C/W MAX
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) JC(t)
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
t, TIME (SECONDS)
1.0
2.0
5.0
10
20
50
100
1.0 s
1.0 ms
1000
TJ = 135C
100 s
dc
TC = 25C
dc
TA = 25C
100
10
1.0
CURRENT LIMIT
THERMAL LIMIT
(APPLIES BELOW RATED VCEO)
3.0
10
30
VCE, COLLECTOREMITTER VOLTAGE
100
292
VCE = 1.0 V
TA = 25C
1000
100
10
0.1
1.0
10
100
1000
1.0
1.0
TA = 25C
TJ = 25C
0.8
0.8
V, VOLTAGE (VOLTS)
BC327,-16,-25 BC328,-16,-25
IC =
500 mA
0.6
0.4
IC = 300 mA
0.2
1.0
10
0.4
IC = 10 mA
0.1

0.6
0.2
IC = 100 mA
0
0.01
0
1.0
100
1000
100
+1.0
VC for VCE(sat)
0
1.0
1.0
10
100
C, CAPACITANCE (pF)
Figure 4. Saturation Region
2.0
VB for VBE
10
100
IC, COLLECTOR CURRENT
1000
Cib
10
Cob
1.0
0.1
1.0
10
100
293
MOTOROLA
NPN Silicon
BC337,-16,-25,-40
BC338,-16,-25,-40
COLLECTOR
1
2
BASE
3
EMITTER
1
MAXIMUM RATINGS
Rating
Symbol
BC337
BC338
Unit
VCEO
45
25
Vdc
VCBO
50
30
Vdc
VEBO
5.0
Vdc
IC
800
mAdc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
Watt
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit

Temperature Range
CASE 2904, STYLE 17

TO92 (TO226AA)
Characteristic
RqJA
200
C/W
RqJC
83.3
C/W

Characteristic
Symbol
Min
Typ
Max
45
25
50
30
5.0
100
100
100
100
100
Unit
OFF CHARACTERISTICS
(IC = 10 mA, IB = 0)
(IC = 100 A, IE = 0)
V(BR)CEO
BC337
BC338
V(BR)CES
BC337
BC338

(IE = 10 mA, IC = 0)
V(BR)EBO

(VCB = 30 V, IE = 0)
(VCB = 20 V, IE = 0)
BC337
BC338

(VCE = 45 V, VBE = 0)
(VCE = 25 V, VBE = 0)
BC337
BC338

(VEB = 4.0 V, IC = 0)
294
Vdc
Vdc
ICBO
nAdc
ICES
IEBO
Vdc
nAdc
nAdc
BC337,-16,-25,-40 BC338,-16,-25,-40

Characteristic
Symbol
Min
Typ
Max
100
100
160
250
60
630
250
400
630
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mA, VCE = 1.0 V)
hFE
BC337/BC338
BC33716/BC33816
BC33725/BC33825
BC33740/BC33840
(IC = 300 mA, VCE = 1.0 V)

(IC = 300 mA, VCE = 1.0 V)
VBE(on)
1.2
Vdc

(IC = 500 mA, IB = 50 mA)
VCE(sat)
0.7
Vdc
Cob
15
pF
fT
210
MHz
Output Capacitance
(VCB = 10 V, IE = 0, f = 1.0 MHz)

THERMAL RESISTANCE

(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1 0.05
0.07 0.02
0.05
SINGLE PULSE
0.01
0.03
t1
t2
SINGLE PULSE
0.02
0.01
0.001
JC(t) = (t) JC
JC = 100C/W MAX
JA(t) = r(t) JA
JA = 375C/W MAX
PULSE TRAIN SHOWN
READ TIME AT t1
P(pk)
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
t, TIME (SECONDS)
1.0
2.0
5.0
10
20
50
100
1.0 s
1.0 ms
1000
TJ = 135C
100 s
1000
dc
TC = 25C
dc
TA = 25C
100
10
1.0
CURRENT LIMIT
THERMAL LIMIT
(APPLIES BELOW RATED VCEO)
3.0
10
30
100
VCE = 1 V
TJ = 25C
100
10
0.1
1.0
10
100
IC, COLLECTOR CURRENT (AMP)
1000
295
1.0
1.0
TJ = 25C
TA = 25C
0.6
IC = 10 mA
0.4
100 mA
300 mA
500 mA
VBE(on) @ VCE = 1 V
0.6
0.4
0.2
0.2
0
0.01
0
0.1
1
10
100
10
100
1000
100
+1
VC for VCE(sat)
C, CAPACITANCE (pF)
0.8
0.8
V, VOLTAGE (VOLTS)
BC337,-16,-25,-40 BC338,-16,-25,-40
VB for VBE
10
100
296
1000
Cib
10
Cob
1
0.1
1
10
100
MOTOROLA
NPN
BC368
PNP
BC369
COLLECTOR
2
COLLECTOR
2
3
BASE
3
BASE
NPN
PNP
1
EMITTER
1
EMITTER

for PNP transistors
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
20
Vdc
VCES
25
Vdc
VEBO
5.0
Vdc
IC
1.0
Adc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
Watt
mW/C
TJ, Tstg
55 to +150
Characteristic
Symbol
Max
Unit
RqJA
200
C/W
RqJC
83.3
C/W

Temperature Range
1
2
CASE 2904, STYLE 14

TO92 (TO226AA)

Symbol
Min
Typ
Max
Unit

(IC = 10 mA, IB = 0)
V(BR)CEO
20
Vdc

(IC = 100 A, IE = 0 )
V(BR)CBO
25
Vdc

(IE = 100 A, IC = 0)
V(BR)EBO
5.0
Vdc

(VCB = 25 V, IE = 0)
(VCB = 25 V, IE = 0, TJ = 150C)
ICBO
10
1.0
Adc
mAdc

(VEB = 5.0 V, IC = 0)
IEBO
10
Adc
50
85
60
375
fT
65
MHz
CollectorEmitter Saturation Voltage (IC = 1.0 A, IB = 100 mA)
VCE(sat)
0.5
BaseEmitter On Voltage (IC = 1.0 A, VCE = 1.0 V)
VBE(on)
1.0
Characteristic
OFF CHARACTERISTICS
ON CHARACTERISTICS
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
(VCE = 1.0 V, IC = 0.5 A)
(VCE = 1.0 V, IC = 1.0 A)
Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 20 MHz)
hFE
297
NPN BC368 PNP BC369

1.0
VCE , COLLECTOR VOLTAGE (VOLTS)
hFE, CURRENT GAIN
200
100
70
50
VCE = 1.0 V
TJ = 25C
20
10
20
50
100
200
500
1000
TJ = 25C
0.8
0.6
50 mA
1000 mA
0.2
250 mA
20
50 100
0.8
TJ = 25C
VB , TEMPERATURE COEFFICIENT (mV/ C)
1.0
0.8
V, VOLTAGE (VOLTS)
500 mA
IC = 10 mA
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10

0.6
0.4
0.2
0
1.0 2.0
5.0 10 20
50 100 200 500 1000
1.2
1.6
2.0
VB for VBE
2.4
2.8
1.0 2.0
5.0 10 20
50 100 200 500 1000
Figure 4. Temperature Coefficient
300
160
TJ = 25C
200
C, CAPACITANCE (pF)
100 mA
0.4
100
70
VCE = 10 V
TJ = 25C
f = 20 MHz
50
30
298
10
20
50
120
80
Cibo
40
Cobo
100
200
500
1000
0
Cobo
Cibo
5.0
1.0
10
2.0
15
3.0
20
4.0
25
5.0
MOTOROLA
High Voltage
BC372
BC373
NPN Silicon
COLLECTOR 3
BASE
2
1
2
EMITTER 1
CASE 2904, STYLE 1

TO92 (TO226AA)
MAXIMUM RATINGS
Rating
Symbol
BC372
BC373
Unit
VCES
100
80
Vdc
VCBO
100
80
Vdc
VEBO
12
Vdc
IC
1.0
Adc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
Watt
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit

Temperature Range
Characteristic
RqJA
200
C/W
RqJC
83.3
C/W

Characteristic
Symbol
Min
Typ
Max
100
80
100
80
12
100
100
100
Unit
OFF CHARACTERISTICS
(IC = 100 mAdc, IB = 0)
(IC = 100 mAdc, IE = 0)
V(BR)CES
BC372
BC373
V(BR)CBO
BC372
BC373

(IE = 10 mAdc, IC = 0)
(VCB = 80 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0)
Vdc
V(BR)EBO
Vdc
ICBO
BC372
BC373

(VEB = 10 V, IC = 0)
IEBO
Vdc
nAdc
nAdc
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
299
BC372 BC373
Characteristic
Symbol
Min
Typ
Max
8.0
10
160
Unit
DC Current Gain
hFE

(IC = 250 mAdc, IB = 0.25 mAdc)
VCE(sat)
1.0
1.1
Vdc

(IC = 250 mAdc, IB = 0.25 mAdc)
VBE(sat)
1.4
2.0
Vdc
fT
100
200
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
10
25
pF
Noise Figure
(IC = 1.0 mAdc, VCE = 5.0 Vdc, Rg = 100 k ohm, f = 1.0 kHz)
NF
2.0
dB
CurrentGain Bandwidth Product
100 K
1.6
VCE = 5 V
1.4
1.2
25C
VOLTAGE (V)
TA = 125C
55C
10 K
VBE(on) @ VCE = 5 V
1
0.8
0.6
0.4
0.2
0
1K
10
100
1000
10
100
500
100
1000
C, CAPACITANCE (pF)
VCE = 5 V
TJ = 25C
100
10
0.6 1
10
100
2100
600
Cib
10
1
0.1
Cob
10
100
MOTOROLA
High Current Transistors
NPN Silicon
BC489,A,B
COLLECTOR
1
2
BASE
3
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
80
Vdc
VCBO
80
Vdc
VEBO
5.0
Vdc
IC
0.5
Adc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
Watt
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit

Temperature Range
CASE 2904, STYLE 17

TO92 (TO226AA)
Characteristic
RqJA
200
C/W
RqJC
83.3
C/W

Characteristic
Symbol
Min
Typ
Max
Unit

(IC = 10 mAdc, IB = 0)
V(BR)CEO
80
Vdc

(IC = 100 mAdc, IE = 0)
V(BR)CBO
80
Vdc

(IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
Vdc
ICBO
100
nAdc
40
60
100
160
15
160
260
400
250
400
OFF CHARACTERISTICS

(VCB = 60 Vdc, IE = 0)
ON CHARACTERISTICS*
DC Current Gain
hFE
BC489
BC489A
BC489B
(IC = 1.0 Adc, VCE = 5.0 Vdc)*
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%.
2101
BC489,A,B

Characteristic
Symbol
Min
Typ
Max
Unit
0.2
0.3
0.5
0.85
0.9
1.2
fT
200
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
7.0
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cib
50
pF
ON CHARACTERISTICS* (Continued)
(IC = 1.0 Adc, IB = 100 mAdc)
VCE(sat)

(IC = 1.0 Adc, IB = 100 mAdc)(1)
VBE(sat)
Vdc
Vdc
TURNON TIME
100
+10 V
RB
Vin
0
tr = 3.0 ns
5.0 F
+VBB
VCC
+40 V
1.0 V
5.0 s
TURNOFF TIME
100
VCC
+40 V
100
RL
OUTPUT
RB
Vin
5.0 F
*CS < 6.0 pF
100
RL
OUTPUT
*CS < 6.0 pF
5.0 s
tr = 3.0 ns
* Total Shunt Capacitance of Test Jig and Connectors
For PNP Test Circuits, Reverse All Voltage Polarities
Figure 1. Switching Time Test Circuits
2102
300
80
VCE = 2.0 V
TJ = 25C
200
TJ = 25C
60
40
C, CAPACITANCE (pF)
BC489,A,B
100
70
50
Cibo
20
10
8.0
6.0
30
2.0
3.0
5.0 7.0 10
20 30
50 70 100
4.0
0.1
200
Cobo
0.2
0.5 1.0 2.0

5.0 10
20
50
100
1.0 k
700
500
ts
300
t, TIME (ns)
200
100
70
50
30
20
tf
VCC = 40 V
IC/IB = 10
IB1 = IB2
TJ = 25C
10
5.0 7.0
10
tr
20 30
50 70 100
200 300
500

(NORMALIZED)
Figure 4. Switching Time
1.0
0.7
0.5
D = 0.5
0.2
0.1
0.3
0.2
P(pk)
t1
0.02
0.1
0.07
0.05
t2
PULSE TRAIN SHOWN
TJ(pk) TC = P(pk) ZJC(t)
0.01
SINGLE PULSE
0.03
SINGLE PULSE
ZJC(t) = r(t) RJC

ZJA(t) = r(t) RJA
0.02
0.01
1.0
2.0
5.0
10
20
50
100
200
500
t, TIME (ms)
1.0 k
2.0 k
5.0 k
10 k
20 k
50 k
100 k
2103
BC489,A,B
1.0 k
700
500
100 s
1.0 ms
1.0 s
300
200
TC = 25C
TA = 25C
100
70
50
CURRENT LIMIT
THERMAL LIMIT
30
20
BC489
10
1.0
20 30
50
2.0 3.0
5.0 7.0 10
70
100
400
TJ =125C
VCE = 1.0 V
200
25C
55C
100
80
60
40
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
300
500
1.0
TJ = 25C
V, VOLTAGE (VOLTS)
0.8
0.6
0.4
0.2
0
0.5
1.0
2.0
5.0
10
50
100
20
2104
200
500
1.0
TJ = 25C
0.8
0.6
50
IC = 10 mA
mA
100 mA
250 mA
500 mA
0.4
0.2
0
0.05
0.1
0.2
0.5
2.0
5.0
1.0
10
20
50
0.8
1.0
1.2
0.8
TJ = 25C
V, VOLTAGE (VOLTS)
RVB, TEMPERATURE COEFFICIENT (mV/C)
BC489,A,B
1.6
RVB for VBE
2.0
2.4
0.6
0.4
0.2
2.8
0.5
1.0
2.0
5.0
20
50
10
100
200
0
0.5
500
1.0
2.0
1.0
TJ = 25C
0.8
0.6
0.4
IC = 10 mA
50 mA 100 mA
250 mA 500 mA
0.2
0
0.05 0.1 0.2
0.5 1.0 2.0

5.0
10
20
500
Figure 10. BaseEmitter Temperature Coefficient
5.0 10 20
50 100 200
50
0.8
1.2
1.6
RVB for VBE
2.0
2.4
2.8
0.5
1.0
2.0
5.0 10 20
50 100 200
500
2105
MOTOROLA
PNP Silicon
BC490,A
COLLECTOR
1
2
BASE
3
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
80
Vdc
VCBO
80
Vdc
VEBO
4.0
Vdc
IC
0.5
Adc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
Watt
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit

Temperature Range
CASE 2904, STYLE 17

TO92 (TO226AA)
Characteristic
RqJA
200
C/W
RqJC
83.3
C/W

Characteristic
Symbol
Min
Typ
Max
Unit

(IC = 10 mAdc, IB = 0)
V(BR)CEO
80
Vdc

(IC = 100 mAdc, IE = 0)
V(BR)CBO
80
Vdc

(IE = 10 mAdc, IC = 0)
V(BR)EBO
4.0
Vdc
ICBO
100
nAdc
40
60
100
15
140
400
250
OFF CHARACTERISTICS

(VCB = 60 Vdc, IE = 0)
ON CHARACTERISTICS*
DC Current Gain
hFE
BC490
BC490A
(IC = 1.0 Adc, VCE = 5.0 Vdc)
2106
BC490,A

Characteristic
Symbol
Min
Min
Max
Unit
0.25
0.5
0.5
0.9
1.0
1.2
fT
150
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
9.0
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cib
110
pF
ON CHARACTERISTICS(1) (Continued)
(IC = 1.0 Adc, IB = 100 mAdc)
VCE(sat)

(IC = 1.0 Adc, IB = 100 mAdc)
VBE(sat)
Vdc
Vdc
TURNON TIME
100
+10 V
RB
Vin
0
tr = 3.0 ns
5.0 F
+VBB
VCC
+40 V
1.0 V
5.0 s
TURNOFF TIME
100
VCC
+40 V
100
RL
OUTPUT
RB
Vin
5.0 F
*CS < 6.0 pF
100
RL
OUTPUT
*CS < 6.0 pF
5.0 s
tr = 3.0 ns
2107
200
100
VCE = 2.0 V
TJ = 25C
70
TJ = 25C
Cibo
50
C, CAPACITANCE (pF)
BC490,A
100
70
50
30
20
10
Cobo
30
7.0
20
2.0 3.0
5.0 7.0 10
20 30 50 70 100
200
5.0
0.1
0.2
0.5 1.0 2.0

5.0 10 20
50 100
1.0 k
700
500
ts
300
t, TIME (ns)
200
100
70
50
30
20
tf
VCC = 40 V
IC/IB = 10
IB1 = IB2
TJ = 25C
tr
10
5.0 7.0 10 20 30
50 70 100
200 300
500

(NORMALIZED)
Figure 4. Switching Time
1.0
0.7
0.5
D = 0.5
0.2
0.1
0.3
0.2
P(pk)
t1
0.02
0.1
0.07
0.05
t2
PULSE TRAIN SHOWN
0.01
SINGLE PULSE
0.03
SINGLE PULSE
ZJC(t) = r(t) RJC

ZJA(t) = r(t) RJA
0.02
0.01
1.0
2.0
5.0
10
20
50
100
200
500
t, TIME (ms)
1.0 k
2.0 k
5.0 k
10 k
20 k
50 k
100 k
2108
BC490,A
1.0
100 s
TJ = 25C
500
0.8
300
1.0 s
200
V, VOLTAGE (VOLTS)
1.0 k
700
1.0 ms
TC = 25C
TA = 25C
100
70
50
CURRENT LIMIT
THERMAL LIMIT
30
20
0.6
0.4
0.2
BC490
2.0 3.0 5.0 7.0 10
20 30 50 70 100
10
1.0
0
0.5
1.0
2.0
TJ = 25C
0.8
50
mA
100 mA
250 mA
500 mA
0.4
0.2
0
0.05
0.1
0.2
1.0 2.0
10
0.5
5.0
20
1.0
IC = 10 mA
200
500
200
500
Figure 6. Active Region, Safe Operating Area
0.6
5.0
10
50
100
20
50
0.8
1.2
1.6
2.0
RVB for VBE
2.4
2.8
0.5
1.0
2.0
5.0
20
50
10
100
400
TJ = 125C
VCE = 1.0 V
200
25C
55C
100
80
60
40
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
300
500
2109
BC490,A
1.0
TJ = 25C
V, VOLTAGE (VOLTS)
0.8
0.6
0.4
0.2
0
0.5 1.0
2.0
5.0 10 20
50 100 200
500
1.0
TJ = 25C
0.8
0.6
IC = 10 mA
50
mA
100 mA
250 mA
500 mA
0.4
0.2
0
0.05 0.1
0.2
0.5 1.0 2.0

5.0
10
20
50
0.8
1.2
1.6
RVB for VBE
2.0
2.4
2.8
0.5
1.0
2.0
5.0 10 20
50 100 200
500
2110
MOTOROLA
NPN Silicon
BC517
COLLECTOR 1
BASE
2
EMITTER 3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCES
30
Vdc
VCB
40
Vdc
VEB
10
Vdc
IC
1.0
Adc

Derate above 25C
PD
625
12
mW
mW/C
Total Power Dissipation @ TC = 25C

Derate above 25C
PD
1.5
12
Watts
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit

Temperature Range
CASE 2904, STYLE 17

TO92 (TO226AA)
Characteristic
RqJA
200
C/W
RqJC
83.3
C/W

Characteristic
Symbol
Min
Typ
Max
Unit

(IC = 2.0 mAdc, VBE = 0)
V(BR)CES
30
Vdc

(IC = 10 mAdc, IE = 0)
V(BR)CBO
40
Vdc

(IE = 100 nAdc, IC = 0)
V(BR)EBO
10
Vdc

(VCE = 30 Vdc)
ICES
500
nAdc

(VCB = 30 Vdc, IE = 0)
ICBO
100
nAdc

(VEB = 10 Vdc, IC = 0)
IEBO
100
nAdc
OFF CHARACTERISTICS
2111
BC517
Symbol
Min
Typ
Max
Unit
hFE
30,000

VCE(sat)
1.0
Vdc

VBE(on)
1.4
Vdc
fT
200
MHz
Characteristic
DC Current Gain

2. fT = |hfe| ftest
v 2.0%.
RS
in
en
IDEAL
TRANSISTOR
2112
BC517
(VCE = 5.0 Vdc, TA = 25C)
500
2.0
BANDWIDTH = 1.0 Hz
RS 0
200
BANDWIDTH = 1.0 Hz
100
10 A
50
100 A
20
IC = 1.0 mA
10
1.0
0.7
0.5
IC = 1.0 mA
0.3
0.2
100 A
0.1
0.07
0.05
10 A
0.03
0.02
10 20
5.0
10 20
50 100 200
500 1 k 2 k 5 k 10 k 20 k
f, FREQUENCY (Hz)
50 k 100 k
50 100 200
50 k 100 k
14
200

12
100
500 1 k 2 k 5 k 10 k 20 k
f, FREQUENCY (Hz)
IC = 10 A
70
50
100 A
30
20
1.0 mA
10
1.0
2.0
10
10 A
8.0
100 A
6.0
4.0
IC = 1.0 mA
2.0
5.0
10
20
50 100 200
500
100
0
0
1.0
2.0
5.0
10
20
50 100 200
500
100
0
2113
BC517
20
4.0
TJ = 25C
C, CAPACITANCE (pF)
10
7.0
Cibo
Cobo
5.0
3.0
2.0
0.04
0.1
0.2
0.4
1.0 2.0 4.0
10
20
2.0
1.0
0.8
0.6
0.4
0.2
0.5
40
200 k
TJ = 125C
25C
30 k
20 k
10 k
7.0 k
5.0 k
55C
VCE = 5.0 V
3.0 k
2.0 k
5.0 7.0
10
20 30
50 70 100
200 300
500
TJ = 25C
V, VOLTAGE (VOLTS)
1.4
1.2
1.0
0.8
0.6
20 30
50 70 100 200 300
2114
0.5 10 20
50
100 200
500
TJ = 25C
2.5
IC = 10 mA
50 mA
250 mA
500 mA
2.0
1.5
1.0
0.5
0.1 0.2
0.5 1.0 2.0 5.0 10 20 50 100 200

500 1000
1.6
10
2.0
3.0
5.0 7.0
1.0
100 k
70 k
50 k
VCE = 5.0 V
f = 100 MHz
TJ = 25C
500
1.0
2.0
25C TO 125C
*RqVC FOR VCE(sat)

55C TO 25C
3.0
25C TO 125C
4.0
qVB FOR VBE

5.0
55C TO 25C
6.0
5.0 7.0 10
20 30
50 70 100
200 300
500
BC517

1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
0.05
SINGLE PULSE
0.1
0.07
0.05
SINGLE PULSE
0.03
0.02
0.01
0.1
0.2
0.5
1.0
2.0
10
5.0
20
50
t, TIME (ms)
100
200
500
1.0 k
2.0 k
5.0 k
10 k
1.0 k
700
500
300
200
FIGURE A
1.0 ms
tP
TA = 25C
TC = 25C
100 s
PP
1.0 s
100
70
50
PP
t1
30
CURRENT LIMIT
THERMAL LIMIT
20
10
0.4 0.6
1/f
DUTY CYCLE
1.0
2.0
4.0 6.0
10
20
40
+ t1 f + ttP1
2115
MOTOROLA
BC546, B
NPN Silicon
BC547, A, B, C
BC548, A, B, C
COLLECTOR
1
2
BASE
3
EMITTER
1
MAXIMUM RATINGS
Rating
Symbol
BC546
BC547
BC548
Unit
VCEO
65
45
30
Vdc
VCBO
80
50
30
Vdc
VEBO
6.0
Vdc
IC
100
mAdc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
Watt
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit

Temperature Range
CASE 2904, STYLE 17

TO92 (TO226AA)
Characteristic
RqJA
200
C/W
RqJC
83.3
C/W

Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
(IC = 1.0 mA, IB = 0)
BC546
BC547
BC548
V(BR)CEO
65
45
30

(IC = 100 Adc)
BC546
BC547
BC548
V(BR)CBO
80
50
30

(IE = 10 mA, IC = 0)
BC546
BC547
BC548
V(BR)EBO
6.0
6.0
6.0

(VCE = 70 V, VBE = 0)
(VCE = 50 V, VBE = 0)
(VCE = 35 V, VBE = 0)
(VCE = 30 V, TA = 125C)
BC546
BC547
BC548
BC546/547/548
0.2
0.2
0.2
15
15
15
4.0
nA
ICES
REV 1
2116
BC546, B BC547, A, B, C BC548, A, B, C

Characteristic
Symbol
Min
Typ
Max
BC547A/548A
BC546B/547B/548B
BC548C
90
150
270
(IC = 2.0 mA, VCE = 5.0 V)
BC546
BC547
BC548
BC547A/548A
BC546B/547B/548B
BC547C/BC548C
110
110
110
110
200
420
180
290
520
450
800
800
220
450
800
(IC = 100 mA, VCE = 5.0 V)
BC547A/548A
BC546B/547B/548B
BC548C
120
180
300
0.09
0.2
0.3
0.25
0.6
0.6
0.7
0.55
0.7
0.77
150
150
150
300
300
300
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 10 A, VCE = 5.0 V)
hFE

(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
(IC = 10 mA, IB = See Note 1)
VCE(sat)

(IC = 10 mA, IB = 0.5 mA)
VBE(sat)
(IC = 2.0 mA, VCE = 5.0 V)
(IC = 10 mA, VCE = 5.0 V)
VBE(on)
V
V
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
fT
BC546
BC547
BC548
MHz
Output Capacitance
(VCB = 10 V, IC = 0, f = 1.0 MHz)
Cobo
1.7
4.5
pF
Input Capacitance
(VEB = 0.5 V, IC = 0, f = 1.0 MHz)
Cibo
10
pF
125
125
125
240
450
220
330
600
500
900
260
500
900
2.0
2.0
2.0
10
10
10

(IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz)
Noise Figure
(IC = 0.2 mA, VCE = 5.0 V, RS = 2 k ,
f = 1.0 kHz, f = 200 Hz)
hfe
BC546
BC547/548
BC547A/548A
BC546B/547B/548B
BC547C/548C
NF
BC546
BC547
BC548
dB
Note 1: IB is value for which IC = 11 mA at VCE = 1.0 V.
2117
BC546, B BC547, A, B, C BC548, A, B, C
1.0
VCE = 10 V
TA = 25C
1.5
0.8
1.0
0.8
0.6
0.4
0.7
0.6
0.5
0.4
0.3
0.2
0.3
0.1
0.2
0.2
0.5
50
1.0
20
2.0
5.0 10
100
0
0.1
200
50 70 100
1.0
VB, TEMPERATURE COEFFICIENT (mV/ C)
TA = 25C
1.6
IC = 200 mA
1.2
IC = IC = IC = 50 mA
10 mA 20 mA
IC = 100 mA
0.8
0.4
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30

2.0
VCE , COLLECTOREMITTER VOLTAGE (V)
TA = 25C
0.9
V, VOLTAGE (VOLTS)
hFE , NORMALIZED DC CURRENT GAIN
2.0
0.02
10
0.1
1.0
55C to +125C
1.2
1.6
2.0
2.4
2.8
20
10
1.0
0.2
100
10
C, CAPACITANCE (pF)
7.0
TA = 25C
5.0
Cib
3.0
Cob
2.0
1.0
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
2118
20
40
BC547/BC548
400
300
200
VCE = 10 V
TA = 25C
100
80
60
40
30
20
0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
20
30
50
BC546, B BC547, A, B, C BC548, A, B, C
BC547/BC548
TA = 25C
VCE = 5 V
TA = 25C
0.8
V, VOLTAGE (VOLTS)
hFE , DC CURRENT GAIN (NORMALIZED)
1.0
2.0
1.0
0.5
0.6
VBE @ VCE = 5.0 V
0.4
0.2
0.2
0
10
100
1.0
0.1 0.2
0.2
0.5
1.0
2.0
100
200
50
100
200
1.0
TA = 25C
1.6
20 mA
50 mA
100 mA
200 mA
1.2
IC =
10 mA
0.8
0.4
50
10 20
2.0
5.0
0.02
0.05
0.1
0.2
0.5
1.0 2.0
5.0
10
1.4
1.8
VB for VBE
55C to 125C
2.2
2.6
3.0
20
0.2
0.5
10 20
5.0
1.0 2.0
BC546
f T, CURRENTGAIN BANDWIDTH PRODUCT
40
C, CAPACITANCE (pF)
TA = 25C
20
Cib
10
6.0
Cob
4.0
2.0
0.1
0.2
1.0 2.0
10 20
0.5
5.0
50
100
500
VCE = 5 V
TA = 25C
200
100
50
20
1.0
5.0 10
50 100
2119
MOTOROLA
Low Noise Transistors

BC549B,C
NPN Silicon
BC550B,C
COLLECTOR
1
2
BASE
3
EMITTER
1
MAXIMUM RATINGS
Rating
Symbol
BC549
BC550
Unit
VCEO
30
45
Vdc
VCBO
30
50
Vdc
VEBO
5.0
Vdc
IC
100
mAdc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
Watt
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit

Temperature Range
CASE 2904, STYLE 17

TO92 (TO226AA)
Characteristic
RqJA
200
C/W
RqJC
83.3
C/W

Characteristic
Symbol
Min
Typ
Max
Unit
30
45
30
50
5.0
Vdc
15
5.0
nAdc
Adc
15
nAdc
OFF CHARACTERISTICS
(IC = 10 mAdc, IB = 0)
(IC = 10 Adc, IE = 0)
(IE = 10 mAdc, IC = 0)
V(BR)CEO
BC549B,C
BC550B,C
V(BR)CBO
BC549B,C
BC550B,C
V(BR)EBO

(VCB = 30 V, IE = 0)
(VCB = 30 V, IE = 0, TA = +125C)
ICBO

(VEB = 4.0 Vdc, IC = 0)
IEBO
2120
Vdc
Vdc
BC549B,C BC550B,C

Characteristic
Symbol
Min
Typ
Max
Unit
100
100
200
420
150
270
290
500
450
800
0.075
0.3
0.25
0.25
0.6
0.6
1.1
0.55
0.52
0.55
0.62
0.7
fT
250
MHz
Ccbo
2.5
pF
240
450
330
600
500
900
0.6
2.5
10
ON CHARACTERISTICS
DC Current Gain
(IC = 10 Adc, VCE = 5.0 Vdc)
hFE
BC549B/550B
BC549C/550C
BC549B/550B
BC549C/550C

(IC = 10 mAdc, IB = see note 1)
(IC = 100 mAdc, IB = 5.0 mAdc, see note 2)
VCE(sat)
BaseEmitter Saturation Voltage

VBE(sat)
(IC = 10 Adc, VCE = 5.0 Vdc)
(IC = 100 Adc, VCE = 5.0 Vdc)
VBE(on)
Vdc
Vdc
Vdc
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
(IC = 2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz)
hfe
BC549B/BC550B
BC549C/BC550C
Noise Figure
(IC = 200 Adc, VCE = 5.0 Vdc, RS = 100 k, f = 1.0 kHz)
dB
NF1
NF2
NOTES:
1. IB is value for which IC = 11 mA at VCE = 1.0 V.
2. Pulse test = 300 s Duty cycle = 2%.
RS
in
en
IDEAL
TRANSISTOR
2121
BC549B,C BC550B,C
1.0
VCE = 10 V
TA = 25C
1.5
0.9
1.0
0.8
0.6
0.4
0.7
0.6
0.5
0.4
0.3
0.2
0.3
0.1
0.2
0.2
0.5
1.0 2.0
5.0
10
20
50
0
0.1
100 200
0.2
0.5
1.0 2.0
5.0 10
20
50
100
10
400
300
7.0
200
100
80
60
C, CAPACITANCE (pF)
TA = 25C
0.8
V, VOLTAGE (VOLTS)
2.0
VCE = 10 V
TA = 25C
40
30
TA = 25C
Cib
5.0
3.0
Cob
2.0
20
0.5 0.7
1.0
2.0
5.0 7.0 10
20
1.0
0.4
50
0.6
1.0
2.0
4.0
10
20
40
170
160
150
VCE = 10 V
f = 1.0 kHz
TA = 25C
140
130
120
0.1
0.2
0.5
1.0
2.0
5.0
10
2122
MOTOROLA
BC556,B
PNP Silicon
BC557,A,B,C
BC558B
COLLECTOR
1
2
BASE
3
EMITTER
MAXIMUM RATINGS
Rating
Symbol
BC556
BC557
BC558
Unit
VCEO
65
45
30
Vdc
VCBO
80
50
30
Vdc
VEBO
5.0
Vdc
IC
100
mAdc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
Watt
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit

Temperature Range
CASE 2904, STYLE 17

TO92 (TO226AA)
Characteristic
RqJA
200
C/W
RqJC
83.3
C/W

Characteristic
Symbol
Min
Typ
Max
65
45
30
80
50
30
5.0
5.0
5.0
2.0
2.0
2.0
100
100
100
4.0
4.0
4.0
Unit
OFF CHARACTERISTICS
(IC = 2.0 mAdc, IB = 0)

(IC = 100 Adc)

(IE = 100 mAdc, IC = 0)

(VCES = 40 V)
(VCES = 20 V)
(VCES = 20 V, TA = 125C)
V(BR)CEO
BC556
BC557
BC558
V(BR)CBO
BC556
BC557
BC558
V(BR)EBO
BC556
BC557
BC558
ICES
BC556
BC557
BC558
BC556
BC557
BC558
nA
2123
BC556,B BC557,A,B,C BC558B

Characteristic
Symbol
Min
Typ
Max
120
120
120
120
180
420
90
150
270
170
290
500
120
180
300
500
800
800
220
460
800
0.075
0.3
0.25
0.3
0.6
0.65
0.7
1.0
0.55
0.62
0.7
0.7
0.82
280
320
360
3.0
6.0
2.0
2.0
2.0
10
10
10
125
125
125
240
450
220
330
600
500
900
260
500
900
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 10 Adc, VCE = 5.0 V)
(IC = 2.0 mAdc, VCE = 5.0 V)
(IC = 100 mAdc, VCE = 5.0 V)
hFE
BC557A
BC556B/557B/558B
BC557C
BC556
BC557
BC558
BC557A
BC556B/557B/558B
BC557C
BC557A
BC556B/557B/558B
BC557C

(IC = 10 mAdc, IB = see Note 1)
VCE(sat)

VBE(sat)
VBE(on)
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
fT
BC556
BC557
BC558
Output Capacitance
(VCB = 10 V, IC = 0, f = 1.0 MHz)
Noise Figure
(IC = 0.2 mAdc, VCE = 5.0 V,
RS = 2.0 k , f = 1.0 kHz, f = 200 Hz)

(IC = 2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz)
Cob
MHz
NF
BC556
BC557
BC558
dB
hfe
BC556
BC557/558
BC557A
BC556B/557B/558B
BC557C
pF
Note 1: IC = 10 mAdc on the constant base current characteristics, which yields the point IC = 11 mAdc, VCE = 1.0 V.
2124
BC557/BC558
1.5
1.0
TA = 25C
0.9
VCE = 10 V
TA = 25C
0.8
V, VOLTAGE (VOLTS)
2.0
1.0
0.7
0.5
0.7
0.6
0.5
0.4
0.3
0.2
0.3
0.1
0.2
0.2
0.5 1.0 2.0

5.0 10 20
50
0
0.1 0.2
100 200
1.2
IC =
10 mA
IC = 50 mA
IC = 200 mA
IC = 100 mA
IC = 20 mA
0.4
0.02
TA = 25C
55C to +125C
1.2
1.6
2.0
2.4
2.8
10 20
0.1
1.0
0.2
10
Cib
7.0
TA = 25C
5.0
Cob
3.0
2.0
1.0
0.4 0.6
1.0
2.0
4.0 6.0
10
20 30 40
10
1.0
100

C, CAPACITANCE (pF)
100
1.0
1.6
50
2.0
0.8
0.5 1.0 2.0

5.0 10 20
400
300
200
150
VCE = 10 V
TA = 25C
100
80
60
40
30
20
0.5
1.0
2.0 3.0
5.0
10
20
30
50
2125
BC556
TJ = 25C
VCE = 5.0 V
TA = 25C
0.8
V, VOLTAGE (VOLTS)
1.0
2.0
1.0
0.5
0.6
VBE @ VCE = 5.0 V
0.4
0.2
0.2
0
0.2
1.0 2.0 5.0 10 20 50 100 200

0.1 0.2
0.5
50 100 200
5.0 10 20
1.0 2.0
2.0
1.0
1.6
1.2
IC =
10 mA
20 mA
50 mA
100 mA 200 mA
0.8
0.4
TJ = 25C
0
0.02
0.05 0.1 0.2

0.5 1.0 2.0
5.0
10
20
1.4
1.8
2.6
3.0
0.2
20
Cib
10
8.0
6.0
Cob
4.0
2.0
0.1 0.2
0.5 1.0 2.0

5.0 10 20
2126
50 100
0.5 1.0
50
2.0
5.0 10 20
100 200
C, CAPACITANCE (pF)
TJ = 25C
55C to 125C
2.2
40
VB for VBE
500
VCE = 5.0 V
200
100
50
20
100
1.0
10

1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
0.05
SINGLE PULSE
0.1
0.07
0.05
SINGLE PULSE
t1
t2
0.03
0.02
0.01
0.1
ZJC(t) = (t) RJC

RJC = 83.3C/W MAX
ZJA(t) = r(t) RJA
RJA = 200C/W MAX
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) RJC(t)
P(pk)
0.2
0.5
1.0
2.0
10
5.0
20
50
t, TIME (ms)
100
200
500
1.0 k
2.0 k
5.0 k
10 k
200
1s
3 ms
100
TA = 25C
50
TJ = 25C
BC558
BC557
BC556
10
5.0
2.0
1.0
BONDING WIRE LIMIT

THERMAL LIMIT

applicable curve.
5.0
10
30 45 65 100
VCE, COLLECTOREMITTER VOLTAGE (V)
2127
MOTOROLA
BC559B
BC559C
BC560C
PNP Silicon
COLLECTOR
1
2
BASE
3
EMITTER
MAXIMUM RATINGS
Rating
Symbol
BC559x
BC560C
Unit
VCEO
30
45
Vdc
VCBO
30
50
Vdc
VEBO
5.0
Vdc
IC
100
mAdc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
Watt
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit

Temperature Range
CASE 2904, STYLE 17

TO92 (TO226AA)
Characteristic
RqJA
200
C/W
RqJC
83.3
C/W

Characteristic
Symbol
Min
Typ
Max
Unit
30
45
30
50
5.0
Vdc
15
5.0
nAdc
Adc
15
nAdc
OFF CHARACTERISTICS
(IC = 10 mAdc, IB = 0)
(IC = 10 Adc, IE = 0)
(IE = 10 mAdc, IC = 0)
V(BR)CEO
BC559B, C
BC560C
Vdc
V(BR)CBO
BC559B, C
BC560C
V(BR)EBO

(VCB = 30 Vdc, IE = 0)
(VCB = 30 Vdc, IE = 0, TA = +125C)
ICBO

(VEB = 4.0 Vdc, IC = 0)
IEBO
Vdc
replaces BC559/D
2128
BC559B BC559C BC560C

Characteristic
Symbol
Min
Typ
Max
Unit
100
100
180
380
150
270
290
500
460
800
0.075
0.3
0.25
0.25
0.6
1.1
0.55
0.52
0.55
0.62
0.7
fT
250
MHz
Ccbo
2.5
pF
240
450
330
600
500
900
0.5
2.0
10
ON CHARACTERISTICS
DC Current Gain
(IC = 10 Adc, VCE = 5.0 Vdc)
hFE
BC559B
BC559C/560C
BC559B
BC559C/560C

(IC = 10 mAdc, IB = see note 1)
(IC = 100 mAdc, IB = 5.0 mAdc, see note 2)
VCE(sat)

VBE(sat)
(IC = 10 Adc, VCE = 5.0 Vdc)
(IC = 100 Adc, VCE = 5.0 Vdc)
VBE(on)
Vdc
Vdc
Vdc
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
(IC = 2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz)
hfe
BC559B
BC559C/BC560C
Noise Figure
(IC = 200 Adc, VCE = 5.0 Vdc, RS = 100 k, f = 1.0 kHz, f = 200 kHz)
dB
NF1
NF2
NOTES:
1. IB is value for which IC = 11 mA at VCE = 1.0 V.
2. Pulse test = 300 s Duty cycle = 2%.
2129
BC559B BC559C BC560C

1.0
VCE = 10 V
TA = 25C
1.5
0.9
1.0
0.8
0.6
0.4
0.7
0.6
0.5
0.4
0.3
0.2
0.3
0.1
0.2
0.2
0.5
0
0.1
1.0 2.0
5.0 10 20
50 100 200
0.2
0.5 1.0 2.0

5.0 10 20
50
100
10
400
300
7.0
200
100
80
60
C, CAPACITANCE (pF)
TA = 25C
0.8
V, VOLTAGE (VOLTS)
2.0
VCE = 10 V
TA = 25C
40
30
TA = 25C
Cib
5.0
3.0
Cob
2.0
20
0.5 0.7 1.0
2.0
5.0 7.0 10
20
1.0
0.4 0.6
50
1.0
2.0
4.0
10
20
40
170
160
150
VCE = 10 V
f = 1.0 kHz
TA = 25C
140
130
120
0.1
0.2
0.5
1.0
2.0
5.0
10
2130
MOTOROLA
BC618
NPN Silicon
COLLECTOR 1
BASE
2
EMITTER 3
1
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
55
Vdc
VCBO
80
Vdc
VEBO
12
Vdc
IC
1.0
Adc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
Watts
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit

Temperature Range
CASE 2904, STYLE 17

TO92 (TO226AA)
Characteristic
RqJA
200
C/W
RqJC
83.3
C/W

Symbol
Min
Typ
Max
Unit

(IC = 10 mAdc, VBE = 0)
V(BR)CEO
55
Vdc

(IC = 100 mAdc, IE = 0)
V(BR)CBO
80
Vdc

(IE = 10 mAdc, IC = 0)
V(BR)EBO
12
Vdc

(VCE = 60 Vdc, VBE = 0)
ICES
50
nAdc

(VCB = 60 Vdc, IE = 0)
ICBO
50
nAdc

(VEB = 10 Vdc, IC = 0)
IEBO
50
nAdc
Characteristic
OFF CHARACTERISTICS
2131
BC618
Symbol
Min
Typ
Max
Unit

(IC = 200 mA, IB = 0.2 mA)
VCE(sat)
1.1
Vdc

(IC = 200 mA, IB = 0.2 mA)
VBE(sat)
1.6
Vdc
DC Current Gain
(IC = 100 A, VCE = 5.0 Vdc)
(IC = 10 mA, VCE = 5.0 Vdc)
(IC = 200 mA, VCE = 5.0 Vdc)
(IC = 1.0 A, VCE = 5.0 Vdc)
hFE
2000
4000
10000
4000
50000
fT
150
MHz
Output Capacitance
(VCB = 10 V, IE = 0, f = 1.0 MHz)
Cob
4.5
7.0
pF
Input Capacitance
(VEB = 5.0 V, IE = 0, f = 1.0 MHz)
Cib
5.0
9.0
pF
Characteristic
ON CHARACTERISTICS
(IC = 500 mA, VCE = 5.0 Vdc, P = 100 MHz)
RS
in
en
IDEAL
TRANSISTOR
2132
BC618
(VCE = 5.0 Vdc, TA = 25C)
500
2.0
BANDWIDTH = 1.0 Hz
RS 0
200
BANDWIDTH = 1.0 Hz
100
10 A
50
100 A
20
IC = 1.0 mA
10
1.0
0.7
0.5
IC = 1.0 mA
0.3
0.2
100 A
0.1
0.07
0.05
10 A
0.03
0.02
10 20
5.0
10 20
50 100 200
500 1 k 2 k 5 k 10 k 20 k
f, FREQUENCY (Hz)
50 k 100 k
50 100 200
50 k 100 k
14
200

12
100
500 1 k 2 k 5 k 10 k 20 k
f, FREQUENCY (Hz)
IC = 10 A
70
50
100 A
30
20
1.0 mA
10
1.0
2.0
10
10 A
8.0
100 A
6.0
4.0
IC = 1.0 mA
2.0
5.0
10
20
50 100 200
500
100
0
0
1.0
2.0
5.0
10
20
50 100 200
500
100
0
2133
BC618
20
4.0
TJ = 25C
C, CAPACITANCE (pF)
10
7.0
Cibo
Cobo
5.0
3.0
2.0
0.04
0.1
0.2
0.4
1.0 2.0 4.0
10
20
2.0
1.0
0.8
0.6
0.4
0.2
0.5
40
200 k
TJ = 125C
25C
30 k
20 k
10 k
7.0 k
5.0 k
55C
VCE = 5.0 V
3.0 k
2.0 k
5.0 7.0
10
20 30
50 70 100
200 300
500
TJ = 25C
V, VOLTAGE (VOLTS)
1.4
1.2
1.0
0.8
0.6
20 30
50 70 100 200 300
2134
0.5 10 20
50
100 200
500
TJ = 25C
2.5
IC = 10 mA
50 mA
250 mA
500 mA
2.0
1.5
1.0
0.5
0.1 0.2
0.5 1.0 2.0 5.0 10 20 50 100 200

500 1000
1.6
10
2.0
3.0
5.0 7.0
1.0
100 k
70 k
50 k
VCE = 5.0 V
f = 100 MHz
TJ = 25C
500
1.0
2.0
25C TO 125C
*RqVC FOR VCE(sat)

55C TO 25C
3.0
25C TO 125C
4.0
qVB FOR VBE

5.0
55C TO 25C
6.0
5.0 7.0 10
20 30
50 70 100
200 300
500
BC618

1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
0.05
SINGLE PULSE
0.1
0.07
0.05
SINGLE PULSE
0.03
0.02
0.01
0.1
0.2
0.5
1.0
2.0
10
5.0
20
50
t, TIME (ms)
100
200
500
1.0 k
2.0 k
5.0 k
10 k
1.0 k
700
500
300
200
FIGURE A
1.0 ms
tP
TA = 25C
TC = 25C
100 s
PP
1.0 s
100
70
50
PP
t1
30
CURRENT LIMIT
THERMAL LIMIT
20
10
0.4 0.6
1/f
DUTY CYCLE
1.0
2.0
4.0 6.0
10
20
40
+ t1 f + ttP1
2135
MOTOROLA
BC635
BC637
BC639
NPN Silicon
COLLECTOR
2
3
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
BC635
BC637
BC639
Unit
VCEO
45
60
80
Vdc
VCBO
45
60
80
Vdc
VEBO
5.0
Vdc
IC
0.5
Adc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
Watt
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit

Temperature Range
CASE 2904, STYLE 14

TO92 (TO226AA)
Characteristic
RqJA
200
C/W
RqJC
83.3
C/W

Characteristic
Symbol
Min
Typ
Max
Unit
45
60
80
45
60
80
5.0
Vdc
100
10
nAdc
Adc
OFF CHARACTERISTICS
(IC = 10 mAdc, IB = 0)

(IC = 100 Adc, IE = 0)

(IE = 10 mAdc, IC = 0)
(VCB = 30 Vdc, IE = 0)
(VCB = 30 Vdc, IE = 0, TA = 125C)
V(BR)CEO
BC635
BC637
BC639
Vdc
V(BR)CBO
BC635
BC637
BC639
V(BR)EBO
Vdc
ICBO
1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
2136
BC635 BC637 BC639

Characteristic
Symbol
Min
Typ
Max
25
40
40
40
25
250
160
160
Unit
DC Current Gain
hFE
BC635
BC637
BC639
(IC = 500 mA, VCE = 2.0 V)

VCE(sat)
0.5
Vdc
VBE(on)
1.0
Vdc
fT
200
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
7.0
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cib
50
pF
2137
BC635 BC637 BC639

500
1000
VCE = 2 V
SOA = 1S
200
PD TA 25C
500
100
50
PD TC 25C
20
10
5
100
BC635
BC637
BC639
PD TA 25C
PD TC 25C
200
2
3 4 5
7 10
20 30 40 50 70
50
20
100
10
30 50 100
300 500
1000
500
300
0.8
V, VOLTAGE (VOLTS)
VCE = 2 V
100
50
VBE(on) @ VCE = 2 V
0.6
0.4
0.2
20
10
100
1000
10
100
1000
0.2
1.0
VCE = 2 VOLTS
T = 0C to +100C
1.6
V for VBE
2.2
1
10
30 50
100
300 500
1000
2138
MOTOROLA
BC636
BC638
BC640
PNP Silicon
COLLECTOR
2
3
BASE
1
EMITTER
1
2
MAXIMUM RATINGS
Rating
Symbol
BC636
BC638
BC640
Unit
VCEO
45
60
80
Vdc
VCBO
45
60
80
Vdc
VEBO
5.0
Vdc
IC
0.5
Adc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
Watt
mW/C
TJ, Tstg
55 to +150

Temperature Range
CASE 2904, STYLE 14

TO92 (TO226AA)
Symbol
Max
Unit
Characteristic
RqJA
200
C/W
RqJC
83.3
C/W

Characteristic
Symbol
Min
Typ
Max
Unit
45
60
80
45
60
80
5.0
Vdc
100
10
nAdc
Adc
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage*
(IC = 10 mAdc, IB = 0)

(IC = 100 Adc, IE = 0)
V(BR)CEO
BC636
BC638
BC640
Vdc
V(BR)CBO
BC636
BC638
BC640

(IE = 10 mAdc, IC = 0)
(VCB = 30 Vdc, IE = 0)
(VCB = 30 Vdc, IE = 0, TA = 125C)
V(BR)EBO
Vdc
ICBO
2139
BC636 BC638 BC640

Characteristic
Symbol
Min
Typ
Max
25
40
40
40
25
250
160
160
Unit
DC Current Gain
hFE
BC636
BC638
BC640
(IC = 500 mA, VCE = 2.0 V)

VCE(sat)
0.25
0.5
0.5
Vdc
VBE(on)
1.0
Vdc
fT
150
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
9.0
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cib
110
pF
2140
BC636 BC638 BC640

500
1000
200
VCE = 2 V
SOA = 1S
PD TA 25C
500
100
50
PD TC 25C
20
10
5
2
1
1
200
A
50
BC636
BC638
BC640
PD TA 25C
PD TC 25C
100
20
2 3 4 5 7 10
20 3040 50 70 100
10
30 50 100
300 500 1000
500
300
0.8
V, VOLTAGE (VOLTS)
VCE = 2 V
100
50
VBE(on) @ VCE = 2 V
0.6
0.4
0.2
20
1
10
100
1000
Figure 3. Current Gain Bandwidth Product
100
10
1000
0.2
1.0
VCE = 2 VOLTS
T = 0C to +100C
1.6
V for VBE
2.2
1
10
30 50 100
300 500 1000
2141
MOTOROLA

PNP Silicon
COLLECTOR
3
BC807-16LT1
BC807-25LT1
BC807-40LT1
2
BASE
1
EMITTER
3
1
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
45
VCBO
50
VEBO
5.0
IC
500
mAdc
Symbol
Max
Unit
225
1.8
mW
mW/C
556
C/W
300
2.4
mW
mW/C
RqJA
417
C/W
TJ, Tstg
55 to +150
CASE 318 08, STYLE 6

SOT 23 (TO 236AB)
Characteristic
Total Device Dissipation FR 5 Board, (1)
TA = 25C
Derate above 25C
PD
RqJA

Alumina Substrate, (2) TA = 25C
Derate above 25C
Junction and Storage Temperature
PD
DEVICE MARKING
BC80716LT1 = 5A; BC80725LT1 = 5B; BC80740LT1 = 5C
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.)

Characteristic
Symbol
Min
Typ
Max
Unit

(IC = 10 mA)
V(BR)CEO
45

(VEB = 0, IC = 10 A)
V(BR)CES
50

(IE = 1.0 mA)
V(BR)EBO
5.0
100
5.0
nA
A
OFF CHARACTERISTICS

(VCB = 20 V)
(VCB = 20 V, TJ = 150C)
ICBO
1. FR5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
REV 1
2142
BC807-16LT1 BC807-25LT1 BC807-40LT1

Characteristic
Symbol
Min
Typ
Max
100
160
250
40
250
400
600
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mA, VCE = 1.0 V)
hFE
BC80716
BC80725
BC80740
(IC = 500 mA, VCE = 1.0 V)

(IC = 500 mA, IB = 50 mA)
VCE(sat)
0.7

(IC = 500 mA, IB = 1.0 V)
VBE(on)
1.2
fT
100
MHz
Cobo
10
pF

(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 V, f = 1.0 MHz)
2143
MOTOROLA

NPN Silicon
COLLECTOR
3
BC817-16LT1
BC817-25LT1
BC817-40LT1
1
BASE
2
EMITTER
3
1
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
45
VCBO
50
VEBO
5.0
IC
500
mAdc
Symbol
Max
Unit
225
1.8
mW
mW/C
556
C/W
300
2.4
mW
mW/C
RqJA
417
C/W
TJ, Tstg
55 to +150

SOT 23 (TO 236AB)
Characteristic
TA = 25C
Derate above 25C
PD
RqJA

Derate above 25C
PD
DEVICE MARKING
BC81716LT1 = 6A; BC81725LT1 = 6B; BC81740LT1 = 6C

Characteristic
Symbol
Min
Typ
Max
Unit

(IC = 10 mA)
V(BR)CEO
45

(VEB = 0, IC = 10 A)
V(BR)CES
50

(IE = 1.0 mA)
V(BR)EBO
5.0
100
5.0
nA
A
OFF CHARACTERISTICS

(VCB = 20 V)
(VCB = 20 V, TA = 150C)
ICBO
1. FR5 = 1.0 x 0.75 x 0.062 in.

REV 2
2144
BC817-16LT1 BC817-25LT1 BC817-40LT1

Characteristic
Symbol
Min
Typ
Max
100
160
250
40
250
400
600
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mA, VCE = 1.0 V)
hFE
BC81716
BC81725
BC81740
(IC = 500 mA, VCE = 1.0 V)

(IC = 500 mA, IB = 50 mA)
VCE(sat)
0.7

(IC = 500 mA, VCE = 1.0 V)
VBE(on)
1.2
fT
100
MHz
Cobo
10
pF

(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 V, f = 1.0 MHz)
2145
MOTOROLA

COLLECTOR
3
NPN Silicon
BC846ALT1,BLT1
BC847ALT1,
BLT1,CLT1 thru
1
BASE
BC850BLT1,CLT1
2
EMITTER
BC846, BC847 and BC848 are

Motorola Preferred Devices
MAXIMUM RATINGS
Symbol
BC846
BC847
BC850
BC848
BC849
Unit
VCEO
65
45
30
VCBO
80
50
30
VEBO
6.0
6.0
5.0
IC
100
100
100
mAdc
Rating
3
1
2

SOT 23 (TO 236AB)
Characteristic
Symbol
Max
Unit
225
1.8
mW
mW/C
556
C/W
300
2.4
mW
mW/C
RqJA
417
C/W
TJ, Tstg
55 to +150

TA = 25C
Derate above 25C
PD
RqJA

Derate above 25C
PD

DEVICE MARKING
BC846ALT1 = 1A; BC846BLT1 = 1B; BC847ALT1 = 1E; BC847BLT1 = 1F;
BC847CLT1 = 1G; BC848ALT1 = 1J; BC848BLT1 = 1K; BC848CLT1 = 1L

Characteristic
Symbol
Min
Typ
Max
Unit
Collector Emitter Breakdown Voltage BC846A,B

(IC = 10 mA)
BC847A,B,C, BC850B,C
V(BR)CEO
65
45
30
Collector Emitter Breakdown Voltage BC846A,B

(IC = 10 A, VEB = 0)
V(BR)CES
80
50
30

(IC = 10 mA)
BC846A,B
V(BR)CBO
80
50
30

(IE = 1.0 mA)
BC846A,B
BC847A,B,C
BC848A,B,C, BC849B,C, BC850B,C
V(BR)EBO
6.0
6.0
5.0
ICBO
15
5.0
nA
A
OFF CHARACTERISTICS
Collector Cutoff Current (VCB = 30 V)

(VCB = 30 V, TA = 150C)
1. FR5 = 1.0 x 0.75 x 0.062 in
REV 1
2146
BC846ALT1,BLT1 BC847ALT1, BLT1,CLT1 thru BC850BLT1,CLT1

Characteristic
Symbol
Min
Typ
Max
Unit
hFE
90
150
270
110
200
420
180
290
520
220
450
800
ON CHARACTERISTICS
DC Current Gain
(IC = 10 A, VCE = 5.0 V)
(IC = 2.0 mA, VCE = 5.0 V)
BC846A, BC847A, BC848A

BC846B, BC847B, BC848B
BC847C, BC848C
BC846B, BC847B, BC848B, BC849B, BC850B
BC847C, BC848C, BC849C, BC850C
Collector Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)

VCE(sat)
0.25
0.6
Base Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)

VBE(sat)
0.7
0.9
Base Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)

Base Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
VBE(on)
580
660
700
770
mV
fT
100
MHz
Cobo
4.5

(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Noise Figure (IC = 0.2 mA,
VCE = 5.0 Vdc, RS = 2.0 k,
f = 1.0 kHz, BW = 200 Hz)

BC847C, BC848C
BC849B,C, BC850B,C
0.8
V, VOLTAGE (VOLTS)
10
4.0
TA = 25C
0.9
1.0
0.8
0.6
0.4
0.7
0.6
0.5
0.4
0.3
0.2
0.3
0.1
0.2
0.5
50
1.0
20
2.0
5.0 10
100
0
0.1
200
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30

50 70 100
2.0
1.0
1.0
VCE = 10 V
TA = 25C
1.5
TA = 25C
1.6
IC = 200 mA
1.2
10 mA 20 mA
IC = 100 mA
0.8
0.4
dB
2.0
0.2
pF
NF
0.02
0.1
1.0
10
20

55C to +125C
1.2
1.6
2.0
2.4
2.8
0.2
10
1.0
100

2147
10
C, CAPACITANCE (pF)
7.0
TA = 25C
5.0
Cib
3.0
Cob
2.0
1.0
0.4 0.6 0.8 1.0
4.0 6.0 8.0 10

2.0
40
20
BC847/BC848
400
300
200
VCE = 10 V
TA = 25C
100
80
60
40
30
20
0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
20
30
50
TA = 25C
VCE = 5 V
TA = 25C
0.8
V, VOLTAGE (VOLTS)
1.0
2.0
1.0
0.5
0.6
VBE @ VCE = 5.0 V
0.4
0.2
0.2
0
10
100
1.0
0.1 0.2
0.2
0.5
2.0
50
100
200
50
100
200
1.0
TA = 25C
1.6
20 mA
50 mA
100 mA
200 mA
1.2
IC =
10 mA
0.8
0.4
10 20
2.0
5.0
1.0
0.02
0.05
0.1
0.2
0.5
1.0 2.0
5.0
10
2148
20
1.4
1.8
VB for VBE
55C to 125C
2.2
2.6
3.0
0.2
0.5
10 20
1.0 2.0
5.0
BC846
40
C, CAPACITANCE (pF)
TA = 25C
20
Cib
10
6.0
Cob
4.0
2.0
0.1
0.2
0.5
5.0
1.0 2.0
10 20
50
100
500
VCE = 5 V
TA = 25C
200
100
50
20
1.0
5.0 10
50 100
2149
MOTOROLA
BC846AWT1,BWT1
NPN Silicon
BC847AWT1,BWT1,
These transistors are designed for general purpose amplifier

applications. They are housed in the SOT323/SC70 which is
designed for low power surface mount applications.
COLLECTOR
3
CWT1
BC848AWT1,BWT1,
CWT1
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
BC846
BC847
BC848
Unit
VCEO
65
45
30
VCBO
80
50
30
VEBO
6.0
6.0
5.0
IC
100
100
100
mAdc
1
2
CASE 41902, STYLE 3

SOT323/SC70
Characteristic
Symbol
Max
Unit

TA = 25C
PD
150
mW
RqJA
833
C/W
PD
2.4
mW/C
TJ, Tstg
55 to +150

DEVICE MARKING
BC846AWT1 = 1A; BC846BWT1 = 1B; BC847AWT1 = 1E; BC847BWT1 = 1F;
BC847CWT1 = 1G; BC848AWT1 = 1J; BC848BWT1 = 1K; BC848CWT1 = 1L

Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
(IC = 10 mA)
BC846 Series
BC847 Series
BC848 Series
V(BR)CEO
65
45
30

(IC = 10 A, VEB = 0)
BC846 Series
BC847 Series
BC848 Series
V(BR)CES
80
50
30

(IC = 10 mA)
BC846 Series
BC847 Series
BC848 Series
V(BR)CBO
80
50
30

(IE = 1.0 mA)
BC846 Series
BC847 Series
BC848 Series
V(BR)EBO
6.0
6.0
5.0
ICBO
15
5.0
nA
A

(VCB = 30 V, TA = 150C)
1. FR5 = 1.0 x 0.75 x 0.062 in
2150
BC846AWT1,BWT1 BC847AWT1,BWT1,CWT1 BC848AWT1,BWT1,CWT1

Characteristic
Symbol
Min
Typ
Max
Unit
hFE
90
150
270
110
200
420
180
290
520
220
450
800
ON CHARACTERISTICS
DC Current Gain
(IC = 10 A, VCE = 5.0 V)
(IC = 2.0 mA, VCE = 5.0 V)

BC847C, BC848C
BC847C, BC848C

VCE(sat)
0.25
0.6

VBE(sat)
0.7
0.9
Base Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)

Base Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
VBE(on)
580
660
700
770
mV
fT
100
MHz
Cobo
4.5

(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Noise Figure (IC = 0.2 mA,
VCE = 5.0 Vdc, RS = 2.0 k,
f = 1.0 kHz, BW = 200 Hz)

BC847C, BC848C
0.8
V, VOLTAGE (VOLTS)
10
4.0
TA = 25C
0.9
1.0
0.8
0.6
0.4
0.7
0.6
0.5
0.4
0.3
0.2
0.3
0.1
0.2
0.5
50
2.0
5.0 10
1.0
20
100
0
0.1
200
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30

50 70 100
2.0
1.0
1.0
VCE = 10 V
TA = 25C
1.5
TA = 25C
1.6
IC = 200 mA
1.2
10 mA 20 mA
IC = 100 mA
0.8
0.4
dB
2.0
0.2
pF
NF
0.02
0.1
1.0
10
20
55C to +125C
1.2
1.6
2.0
2.4
2.8
0.2
10
1.0
100
2151
10
C, CAPACITANCE (pF)
7.0
TA = 25C
5.0
Cib
3.0
Cob
2.0
1.0
0.4 0.6 0.8 1.0
4.0 6.0 8.0 10

2.0
40
20
BC847/BC848
400
300
200
VCE = 10 V
TA = 25C
100
80
60
40
30
20
0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
20
30
50
TA = 25C
VCE = 5 V
TA = 25C
0.8
V, VOLTAGE (VOLTS)
1.0
2.0
1.0
0.5
0.6
VBE @ VCE = 5.0 V
0.4
0.2
0.2
0
10
100
1.0
0.1 0.2
0.2
0.5
2.0
50
100
200
50
100
200
1.0
TA = 25C
1.6
20 mA
50 mA
100 mA
200 mA
1.2
IC =
10 mA
0.8
0.4
10 20
2.0
5.0
1.0
0.02
0.05
0.1
0.2
0.5
1.0 2.0
5.0
10
2152
20
1.4
1.8
VB for VBE
55C to 125C
2.2
2.6
3.0
0.2
0.5
10 20
1.0 2.0
5.0
BC846
40
C, CAPACITANCE (pF)
TA = 25C
20
Cib
10
6.0
Cob
4.0
2.0
0.1
0.2
0.5
5.0
1.0 2.0
10 20
50
100
500
VCE = 5 V
TA = 25C
200
100
50
20
1.0
5.0 10
50 100
2153
MOTOROLA
PNP Silicon
BC856ALT1,BLT1
COLLECTOR
3
BC857ALT1,BLT1
BC858ALT1,BLT1,
CLT1
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
BC856
BC857
BC858
Unit
VCEO
65
45
30
VCBO
80
50
30
VEBO
5.0
5.0
5.0
IC
100
100
100
mAdc
3
1
2

SOT 23 (TO 236AB)
Characteristic
Symbol
Max
Unit
225
1.8
mW
mW/C
556
C/W
300
2.4
mW
mW/C
RqJA
417
C/W
TJ, Tstg
55 to +150

TA = 25C
Derate above 25C
PD
RqJA

Derate above 25C
PD

DEVICE MARKING
BC856ALT1 = 3A; BC856BLT1 = 3B; BC857ALT1 = 3E; BC857BLT1 = 3F;
BC858ALT1 = 3J; BC858BLT1 = 3K; BC858CLT1 = 3L

Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
(IC = 10 mA)
BC856 Series
BC857 Series
BC858 Series
V(BR)CEO
65
45
30

(IC = 10 A, VEB = 0)
BC856 Series
BC857 Series
BC858 Series
V(BR)CES
80
50
30

(IC = 10 mA)
BC856 Series
BC857 Series
BC858 Series
V(BR)CBO
80
50
30

(IE = 1.0 mA)
BC856 Series
BC857 Series
BC858 Series
V(BR)EBO
5.0
5.0
5.0
ICBO
15
4.0
nA
A

Collector Cutoff Current (VCB = 30 V, TA = 150C)
1. FR5 = 1.0 x 0.75 x 0.062 in
REV 1
2154
BC856ALT1,BLT1 BC857ALT1,BLT1 BC858ALT1,BLT1,CLT1

Symbol
Min
Typ
Max
Unit
hFE
90
150
270
125
220
420
180
290
520
250
475
800
0.3
0.65
0.7
0.9
0.6
0.75
0.82
fT
100
MHz
Output Capacitance
(VCB = 10 V, f = 1.0 MHz)
Cob
4.5
pF
Noise Figure
(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz)
NF
10
dB
Characteristic
ON CHARACTERISTICS
DC Current Gain
(IC = 10 A, VCE = 5.0 V)
(IC = 2.0 mA, VCE = 5.0 V)

BC858C
BC858C

(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
VCE(sat)

(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
VBE(sat)

(IC = 2.0 mA, VCE = 5.0 V)
(IC = 10 mA, VCE = 5.0 V)
VBE(on)

(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
2155
BC857/BC858
1.5
1.0
TA = 25C
0.9
VCE = 10 V
TA = 25C
0.8
V, VOLTAGE (VOLTS)
2.0
1.0
0.7
0.5
0.7
0.6
0.5
0.4
0.3
0.2
0.3
0.1
0.2
0.2
0.5 1.0 2.0

5.0 10 20
50
0
0.1 0.2
100 200
1.2
IC =
10 mA
IC = 50 mA
IC = 200 mA
IC = 100 mA
IC = 20 mA
0.4
0.02
TA = 25C
55C to +125C
1.2
1.6
2.0
2.4
2.8
10 20
0.1
1.0
0.2
10
Cib
7.0
C, CAPACITANCE (pF)
TA = 25C
5.0
Cob
3.0
2.0
1.0
0.4 0.6
1.0
2.0
4.0 6.0
10
20 30 40
10
1.0
100

2156
100
1.0
1.6
50
2.0
0.8
0.5 1.0 2.0

5.0 10 20
400
300
200
150
VCE = 10 V
TA = 25C
100
80
60
40
30
20
0.5
1.0
2.0 3.0
5.0
10
20
30
50
BC856
TJ = 25C
VCE = 5.0 V
TA = 25C
0.8
V, VOLTAGE (VOLTS)
1.0
2.0
1.0
0.5
0.6
VBE @ VCE = 5.0 V
0.4
0.2
0.2
0
0.2
1.0 2.0 5.0 10 20 50 100 200

0.1 0.2
0.5
50 100 200
5.0 10 20
1.0 2.0
2.0
1.0
1.6
1.2
IC =
10 mA
20 mA
50 mA
100 mA 200 mA
0.8
0.4
TJ = 25C
0
0.02
0.05 0.1 0.2

0.5 1.0 2.0
5.0
10
20
1.4
1.8
2.6
3.0
0.2
20
Cib
10
8.0
6.0
Cob
4.0
2.0
0.1 0.2
0.5 1.0 2.0

5.0 10 20
0.5 1.0
50
2.0
5.0 10 20
100 200
C, CAPACITANCE (pF)
TJ = 25C
55C to 125C
2.2
40
VB for VBE
50 100
500
VCE = 5.0 V
200
100
50
20
100
1.0
10
2157

1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
0.05
SINGLE PULSE
0.1
0.07
0.05
SINGLE PULSE
t1
t2
0.03
0.02
0.01
0.1
ZJC(t) = r(t) RJC

RJC = 83.3C/W MAX
ZJA(t) = r(t) RJA
RJA = 200C/W MAX
PULSE TRAIN SHOWN
READ TIME AT t1
P(pk)
0.2
0.5
1.0
2.0
10
5.0
20
50
t, TIME (ms)
100
200
500
1.0 k
2.0 k
5.0 k
10 k
200
1s
3 ms
100
50
10
5.0
2.0
1.0
TA = 25C
TJ = 25C
BC558
BC557
BC556
BONDING WIRE LIMIT
THERMAL LIMIT

applicable curve.
limitations will reduce the power that can be handled to values less
than the limitations imposed by the secondary breakdown.
5.0
10
30 45 65 100
2158
MOTOROLA
BC856AWT1,BWT1
PNP Silicon
BC857AWT1,BWT1
BC858AWT1,BWT1,

applications. They are housed in the SOT323/SC70 which is
CWT1
COLLECTOR
3
1
BASE
3
2
EMITTER
1
MAXIMUM RATINGS
Rating
Symbol
BC856
BC857
BC858
Unit
VCEO
65
45
30
VCBO
80
50
30
VEBO
5.0
5.0
5.0
IC
100
100
100
mAdc
CASE 41902, STYLE 3

SOT323/SC70
Characteristic
Symbol
Max
Unit

TA = 25C
PD
150
mW
RqJA
833
C/W
TJ, Tstg
55 to +150
DEVICE MARKING
BC856AWT1 = 3A; BC856BWT1 = 3B; BC857AWT1 = 3E; BC857BWT1 = 3F;
BC858AWT1 = 3J; BC858BWT1 = 3K; BC858CWT1 = 3L

Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
(IC = 10 mA)
BC856 Series
BC857 Series
BC858 Series
V(BR)CEO
65
45
30

(IC = 10 A, VEB = 0)
BC856 Series
BC857 Series
BC858 Series
V(BR)CES
80
50
30

(IC = 10 mA)
BC856 Series
BC857 Series
BC858 Series
V(BR)CBO
80
50
30

(IE = 1.0 mA)
BC856 Series
BC857 Series
BC858 Series
V(BR)EBO
5.0
5.0
5.0
ICBO
15
4.0
nA
A

Collector Cutoff Current (VCB = 30 V, TA = 150C)
1. FR5 = 1.0 x 0.75 x 0.062 in
2159
BC856AWT1,BWT1 BC857AWT1,BWT1 BC858AWT1,BWT1,CWT1

Symbol
Min
Typ
Max
Unit
hFE
90
150
270
125
220
420
180
290
520
250
475
800
0.3
0.65
0.7
0.9
0.6
0.75
0.82
fT
100
MHz
Output Capacitance
(VCB = 10 V, f = 1.0 MHz)
Cob
4.5
pF
Noise Figure
(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k,
f = 1.0 kHz, BW = 200 Hz)
NF
10
dB
Characteristic
ON CHARACTERISTICS
DC Current Gain
(IC = 10 A, VCE = 5.0 V)
(IC = 2.0 mA, VCE = 5.0 V)

BC858C
BC858C

(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
VCE(sat)

(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
VBE(sat)

(IC = 2.0 mA, VCE = 5.0 V)
(IC = 10 mA, VCE = 5.0 V)
VBE(on)

(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
2160
BC857/BC858
1.5
1.0
TA = 25C
0.9
VCE = 10 V
TA = 25C
0.8
V, VOLTAGE (VOLTS)
2.0
1.0
0.7
0.5
0.7
0.6
0.5
0.4
0.3
0.2
0.3
0.1
0.2
0.2
0.5 1.0 2.0

5.0 10 20
50
0
0.1 0.2
100 200
1.2
IC =
10 mA
IC = 50 mA
IC = 200 mA
IC = 100 mA
IC = 20 mA
0.4
0.02
TA = 25C
55C to +125C
1.2
1.6
2.0
2.4
2.8
10 20
0.1
1.0
0.2
10
Cib
7.0
TA = 25C
5.0
Cob
3.0
2.0
1.0
0.4 0.6
1.0
2.0
4.0 6.0
10
20 30 40
10
1.0
100

C, CAPACITANCE (pF)
100
1.0
1.6
50
2.0
0.8
0.5 1.0 2.0

5.0 10 20
400
300
200
150
VCE = 10 V
TA = 25C
100
80
60
40
30
20
0.5
1.0
2.0 3.0
5.0
10
20
30
50
2161
BC856
TJ = 25C
VCE = 5.0 V
TA = 25C
0.8
V, VOLTAGE (VOLTS)
1.0
2.0
1.0
0.5
0.6
VBE @ VCE = 5.0 V
0.4
0.2
0.2
0
0.2
1.0 2.0 5.0 10 20 50 100 200

0.1 0.2
0.5
50 100 200
5.0 10 20
1.0 2.0
2.0
1.0
1.6
1.2
IC =
10 mA
20 mA
50 mA
100 mA 200 mA
0.8
0.4
TJ = 25C
0
0.02
0.05 0.1 0.2

0.5 1.0 2.0
5.0
10
20
1.4
1.8
2.6
3.0
0.2
20
Cib
10
8.0
6.0
Cob
4.0
2.0
0.1 0.2
0.5 1.0 2.0

5.0 10 20
2162
50 100
0.5 1.0
50
2.0
5.0 10 20
100 200
C, CAPACITANCE (pF)
TJ = 25C
55C to 125C
2.2
40
VB for VBE
500
VCE = 5.0 V
200
100
50
20
100
1.0
10

1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
0.05
SINGLE PULSE
0.1
0.07
0.05
SINGLE PULSE
t1
t2
0.03
0.02
0.01
0.1
ZJC(t) = r(t) RJC

RJC = 83.3C/W MAX
ZJA(t) = r(t) RJA
RJA = 200C/W MAX
PULSE TRAIN SHOWN
READ TIME AT t1
P(pk)
0.2
0.5
1.0
2.0
10
5.0
20
50
t, TIME (ms)
100
200
500
1.0 k
2.0 k
5.0 k
10 k
200
1s
3 ms
100
50
10
5.0
2.0
1.0
TA = 25C
TJ = 25C
BC558
BC557
BC556
BONDING WIRE LIMIT
THERMAL LIMIT

applicable curve.
than the limitations imposed by the secondary breakdown.
5.0
10
30 45 65 100
2163
MOTOROLA
BCP53T1
PNP Silicon
Epitaxial Transistor
This PNP Silicon Epitaxial transistor is designed for use in audio amplifier
applications. The device is housed in the SOT-223 package which is designed for
medium power surface mount applications.
MEDIUM POWER
PNP SILICON
HIGH CURRENT
TRANSISTOR
SURFACE MOUNT
High Current: 1.5 Amps

NPN Complement is BCP56
The SOT-223 Package can be soldered using wave or reflow. The formed leads
absorb thermal stress during soldering, eliminating the possibility of damage to
the die
Available in 12 mm Tape and Reel
Use BCP53T1 to order the 7 inch/1000 unit reel.
COLLECTOR 2,4
1
BASE
1
2
3
EMITTER 3
CASE 318E-04, STYLE 1

TO-261AA
MAXIMUM RATINGS (TC = 25C unless otherwise noted)

Symbol
Value
Unit
VCEO
80
Vdc
VCBO
100
Vdc
VEBO
5.0
Vdc
Collector Current
IC
1.5
Adc
Total Power Dissipation @ TA = 25C(1)

Derate above 25C
PD
1.5
12
Watts
mW/C
TJ, Tstg
65 to 150
Symbol
Max
Unit
RJA
83.3
C/W
TL
260
10
C
Sec
Rating
Operating and Storage Temperature Range
DEVICE MARKING
AH
Characteristic
Thermal Resistance Junction-to-Ambient (surface mounted)
Lead Temperature for Soldering, 0.0625 from case
Time in Solder Bath
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
REV 1
2164
BCP53T1
Characteristics
Symbol
Min
Typ
Max
Unit
V(BR)CBO
100
Vdc
V(BR)CEO
80
Vdc
Collector-Emitter Breakdown Voltage (IC = 100 Adc, RBE = 1.0 kohm)
V(BR)CER
100
Vdc
Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0)
V(BR)EBO
5.0
Vdc
ICBO
100
nAdc
Emitter-Base Cutoff Current (VEB = 5.0 Vdc, IC = 0)
IEBO
10
Adc
25
40
25
250
OFF CHARACTERISTICS
ON CHARACTERISTICS
DC Current Gain
hFE
Collector-Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
0.5
Vdc
Base-Emitter On Voltage (IC = 500 mAdc, VCE = 2.0 Vdc)
VBE(on)
1.0
Vdc
fT
50
MHz
Current-Gain Bandwidth Product
500
VCE = 2 V
200
100
50
20
10
30 50 100
300 500
1000
f T , CURRENT GAIN BANDWIDTH PRODUCT (MHz)

500
300
VCE = 2 V
100
50
20
V(BE)sat @ IC/IB = 10
C, CAPACITANCE (pF)
V, VOLTAGE (VOLTS)
0.8
V(BE)on @ VCE = 2 V
0.6
0.4
0.2
V(CE)sat @ IC/IB = 10
0
10
100
1000
10
100
1000
120
110
100
90
80
70
60
Cib
50
40
30
20
10
0
Cob
0
10
12
14
V, VOLTAGE (VOLTS)
Figure 3. Saturation and ON Voltages
16
18
20
2165
MOTOROLA
BCP56T1
SERIES
NPN Silicon
These NPN Silicon Epitaxial transistors are designed for use in audio amplifier
applications. The device is housed in the SOT-223 package, which is designed for
MEDIUM POWER
NPN SILICON
HIGH CURRENT
TRANSISTOR
SURFACE MOUNT
High Current: 1.0 Amp

The SOT-223 package can be soldered using wave or reflow. The formed leads
the die
Use BCP56T1 to order the 7 inch/1000 unit reel
Use BCP56T3 to order the 13 inch/4000 unit reel
COLLECTOR 2,4
PNP Complement is BCP53T1
2
3
BASE
1

TO-261AA
EMITTER 3

Symbol
Value
Unit
VCEO
80
Vdc
VCBO
100
Vdc
VEBO
Vdc
Rating
Collector Current
IC
Adc

Derate above 25C
PD
1.5
12
Watts
mW/C
TJ, Tstg
65 to 150
Symbol
Max
Unit
RJA
83.3
C/W
TL
260
10
C
Sec
DEVICE MARKING
BCP56T1 = BH
BCP56-10T1 = BK
BCP56-16T1 = BL
Characteristic
Thermal Resistance
Junction-to-Ambient (surface mounted)
Maximum Temperature for Soldering Purposes
Time in Solder Bath
1. Device mounted on a FR-4 glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.0625 in.; mounting pad for the collector lead = 0.93 sq. in.
REV 1
2166
BCP56T1 SERIES
Characteristics
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage

(IC = 100 Adc, IE = 0)
V(BR)CBO
100
Vdc
Collector-Emitter Breakdown Voltage

(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
80
Vdc
Emitter-Base Breakdown Voltage

(IE = 10 Adc, IC = 0)
V(BR)EBO
5.0
Vdc
Collector-Base Cutoff Current

(VCB = 30 Vdc, IE = 0)
ICBO
100
nAdc
Emitter-Base Cutoff Current

(VEB = 5.0 Vdc, IC = 0)
IEBO
10
Adc
25
40
63
100
25
250
160
250
OFF CHARACTERISTICS
ON CHARACTERISTICS (2)
DC Current Gain
(IC = 5.0 mA, VCE = 2.0 V)
(IC = 150 mA, VCE = 2.0 V)
(IC = 500 mA, VCE = 2.0 V)
hFE
All Part Types
BCP56T1
BCP56-10T1
BCP56-16T1
All Types
Collector-Emitter Saturation Voltage

VCE(sat)
0.5
Vdc
Base-Emitter On Voltage
VBE(on)
1.0
Vdc
fT
130
MHz
2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
2167
BCP56T1 SERIES
1000
TJ = 125C
TJ = 25C
100
10
TJ = 55C
10
100
1000
1000
80
60
TJ = 25C
C, CAPACITANCE (pF)
f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
100
40
Cibo
20
10
8.0
6.0
10
1.0
10
100
Cobo
4.0
0.1
1000
0.2
0.5
1.0 2.0
5.0 10
20
1.0
TJ = 25C
V, VOLTAGE (VOLTS)
0.8
0.6
0.4
0.2
0
0.5
1.0
2.0
100
5.0
10
20
50
2168
200
100
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 2. Current-Gain Bandwidth Product
50
500
1.0
TJ = 25C
0.8
0.6
IC = 10 mA
50
mA
100 mA
250 mA
500 mA
0.4
0.2
0
0.05
0.1
0.2
0.5
1.0 2.0
5.0
10
20
50
MOTOROLA
BCP68T1
NPN Silicon
This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current
MEDIUM POWER
NPN SILICON
HIGH CURRENT
TRANSISTOR
SURFACE MOUNT
High Current: IC = 1.0 Amp

The SOT-223 Package can be soldered using wave or reflow.
SOT-223 package ensures level mounting, resulting in improved thermal
conduction, and allows visual inspection of soldered joints. The formed leads
the die
The PNP Complement is BCP69T1
COLLECTOR 2,4
2
3

TO-261AA
BASE
1
EMITTER 3

Symbol
Value
Unit
VCEO
25
Vdc
VCBO
20
Vdc
VEBO
Vdc
Collector Current
IC
Adc

Derate above 25C
PD
1.5
12
Watts
mW/C
TJ, Tstg
65 to 150
Symbol
Max
Unit
RJA
83.3
C/W
TL
260
10
C
Sec
Rating
DEVICE MARKING
CA
Characteristic
Time in Solder Bath
REV 1
2169
BCP68T1
Characteristics
Symbol
Min
Typ
Max
Unit

(IC = 100 Adc, IE = 0)
V(BR)CES
25
Vdc

(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
20
Vdc

(IE = 10 Adc, IC = 0)
V(BR)EBO
5.0
Vdc

(VCB = 25 Vdc, IE = 0)
ICBO
10
Adc

(VEB = 5.0 Vdc, IC = 0)
IEBO
10
Adc
50
85
60
375
OFF CHARACTERISTICS
DC Current Gain
(IC = 1.0 Adc, VCE = 1.0 Vdc)
hFE

(IC = 1.0 Adc, IB = 100 mAdc)
VCE(sat)
0.5
Vdc
(IC = 1.0 Adc, VCE = 1.0 Vdc)
VBE(on)
1.0
Vdc
fT
60
MHz
300
200
TJ = 125C
= 25C
100
= 55C
VCE = 1.0 V
10
1.0
10
100
2170
1000
f T, CURRENT-GAIN-BANDWIDTH PRODUCT (MHz)

300
200
100
70
VCE = 10 V
TJ = 25C
f = 30 MHz
50
30
10
100
200
1000
Figure 2. Current-Gain-Bandwidth Product
BCP68T1
80
TJ = 25C
TJ = 25C
0.8
0.6
70
Cib, CAPACITANCE (pF)
V, VOLTAGE (VOLTS)
1.0
0.4
0.2
50
40
1.0
60
30
10
100
1000
1.0
2.0
3.0
4.0
25
TJ = 25C
20
15
10
5.0
5.0
5.0
10
15
20
0.8
1.2
1.6
RVB for VBE
2.0
2.4
2.8
1.0
10
100
1000
Figure 6. Base-Emitter Temperature Coefficient
1.0
VCE , COLLECTOR VOLTAGE (V)
TJ = 25C
0.8
0.6
0.4
= 1000 mA
I C = 10 mA
= 50 mA
= 100 mA
0.2
0
0.01
= 500 mA
0.1
1.0
10
100
2171
MOTOROLA
BCP69T1
PNP Silicon
This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current
MEDIUM POWER
PNP SILICON
HIGH CURRENT
TRANSISTOR
SURFACE MOUNT
High Current: IC = 1.0 Amp

conduction, and allows visual inspection of soldered joints. The formed leads
the die.
NPN Complement is BCP68
COLLECTOR 2,4
2
3
BASE
1

TO-261AA
EMITTER 3

Symbol
Value
Unit
VCEO
25
Vdc
VCBO
20
Vdc
VEBO
5.0
Vdc
Collector Current
IC
1.0
Adc

Derate above 25C
PD
1.5
12
Watts
mW/C
TJ, Tstg
65 to 150
Symbol
Max
Unit
RJA
83.3
C/W
TL
260
10
C
Sec
Rating
DEVICE MARKING
CE
Characteristic
Time in Solder Bath
REV 2
2172
BCP69T1
Characteristics
Symbol
Min
Typ
Max
Unit
Collector-Emitter Breakdown Voltage (IC = 100 Adc, IE = 0)
V(BR)CES
25
Vdc
V(BR)CEO
20
Vdc
V(BR)EBO
5.0
Vdc
ICBO
10
Adc
IEBO
10
Adc
50
85
60
375
OFF CHARACTERISTICS
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 Adc, VCE = 1.0 Vdc)
hFE
Collector-Emitter Saturation Voltage (IC = 1.0 Adc, IB = 100 mAdc)
VCE(sat)
0.5
Vdc
Base-Emitter On Voltage (IC = 1.0 Adc, VCE = 1.0 Vdc)
VBE(on)
1.0
Vdc
fT
60
MHz
hFE , CURRENT GAIN
200
100
70
50
VCE = 1.0 V
TJ = 25C
20
10
100
1000

300
200
100
70
VCE = 10 V
TJ = 25C
f = 30 MHz
50
30
10
100
1000

160
1.0
TJ = 25C
TJ = 25C
0.6
V(BE)sat @ IC/IB = 10
V(BE)on @ VCE = 1.0 V
0.4
0.2
0
1.0
C, CAPACITANCE (pF)
V, VOLTAGE (VOLTS)
0.8
120
80
Cib
40
V(CE)sat @ IC/IB = 10
10
100
1000
Figure 3. Saturation and ON Voltages
Cob
0
Cob
Cib
5.0
1.0
1.0
2.0
1.5
3.0
2.0
4.0
2.5
5.0
2173
MOTOROLA

PNP Silicon
BCW29LT1
BCW30LT1
COLLECTOR
3
1
BASE
2
EMITTER
1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
32
Vdc
VCBO
32
Vdc
EmitterBase Voltage
VEBO
5.0
Vdc
IC
100
mAdc

SOT 23 (TO 236AB)
Characteristic
Total Device Dissipation FR-5 Board (1)
TA = 25C
Derate above 25C
Derate above 25C
Symbol
Max
Unit
PD
225
mW
1.8
mW/C
RJA
556
C/W
PD
300
mW
2.4
mW/C
RJA
417
C/W
TJ, Tstg
55 to +150
DEVICE MARKING
BCW29LT1 = C1; BCW30LT1 = C2

Symbol
Min
Max
Unit
CollectorEmitter Breakdown Voltage

(IC = 2.0 mAdc, IE = 0)
V(BR)CEO
32
Vdc

(IC = 100 Adc, VEB = 0)
V(BR)CES
32
Vdc
CollectorBase Breakdown Voltage

(IC = 10 Adc, IC = 0)
V(BR)CBO
32
Vdc
EmitterBase Breakdown Voltage

(IE = 10 Adc, IC = 0)
V(BR)EBO
5.0
Vdc
100
10
nAdc
Adc
Characteristic
OFF CHARACTERISTICS

(VCB = 32 Vdc, IE = 0)
(VCB = 32 Vdc, IE = 0, TA = 100C)
0.062 in.
0.024 in. 99.5% alumina.
ICBO
1. FR 5 = 1.0
0.75
2. Alumina = 0.4
0.3
2174
BCW29LT1 BCW30LT1
Characteristic
Symbol
Min
Max
Unit
120
215
260
500
0.3
0.6
0.75
7.0
10
ON CHARACTERISTICS
DC Current Gain
hFE
BCW29
BCW30
CollectorEmitter Saturation Voltage

VCE(sat)
VBE(on)
Vdc
Vdc
Output Capacitance
(IE = 0, VCB = 10 Vdc, f = 1.0 MHz)
Noise Figure
(IC = 0.2 mAdc, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz)
Cobo
pF
NF
dB
2175
BCW29LT1 BCW30LT1
(VCE = 5.0 Vdc, TA = 25C)
10
7.0
IC = 10 A
5.0
1.0
7.0
5.0
BANDWIDTH = 1.0 Hz
RS 0
30 A
3.0
100 A
300 A
1.0 mA
2.0
BANDWIDTH = 1.0 Hz
RS
IC = 1.0 mA
3.0
2.0
300 A
1.0
0.7
0.5
100 A
30 A
0.3
0.2
1.0
10 A
0.1
10
20
50
100 200
500 1.0 k
f, FREQUENCY (Hz)
2.0 k
5.0 k
10
10 k
20
50
100 200
500 1.0 k 2.0 k
f, FREQUENCY (Hz)
5.0 k
10 k
1.0 M
500 k
BANDWIDTH = 1.0 Hz
(VCE = 5.0 Vdc, TA = 25C)
200 k
100 k
50 k
20 k
10 k
0.5 dB
5.0 k
1.0 dB
2.0 k
1.0 k
500
2.0 dB
3.0 dB
200
100
20
30
50 70 100
200 300
BANDWIDTH = 1.0 Hz
200 k
100 k
50 k
20 k
10 k
0.5 dB
5.0 k
1.0 dB
2.0 k
1.0 k
500
2.0 dB
3.0 dB
200
100
5.0 dB
10
1.0 M
500 k
500 700 1.0 k
5.0 dB
10
20
1.0 M
500 k
30
50 70 100
200 300
500 700 1.0 k
10 Hz to 15.7 kHz
200 k
100 k
50 k
20 k
10 k
NF
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
200
100
10
20
30
50 70 100
200 300
en2
) 4KTRS ) In 2RS2 12
4KTRS

5.0 k
2.0 k
1.0 k
500
+ 20 log10
500 700 1.0 k
Figure 5. Wideband
2176
BCW29LT1 BCW30LT1
400
TJ = 125C
25C
200
55C
100
80
BCW29LT1
VCE = 1.0 V
VCE = 10 V
60
40
0.003 0.005
0.01
0.02 0.03
0.05 0.07 0.1
0.2 0.3 0.5 0.7 1.0

2.0
3.0
5.0 7.0
10
20
30
50 70 100
100
1.0
TA = 25C
BCW29LT1
0.8
IC = 1.0 mA
0.6
10 mA
50 mA
100 mA
0.4
0.2
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
TA = 25C
PULSE WIDTH = 300 s
80 DUTY CYCLE 2.0%
300 A
200 A
150 A
40
100 A
50 A
20
0
5.0 10
20
5.0
10
15
20
25
30
35
TJ = 25C
V, VOLTAGE (VOLTS)
1.2
1.0
0.8
0.6
0.4
0.2
0
0.5 1.0
2.0
5.0
10
20
40
1.4
0.2
250 A
60
0.1
IB = 400 A
350 A
50
100
1.6
0.8
*qVC for VCE(sat)
25C to 125C
0
55C to 25C
0.8
25C to 125C
1.6
2.4
0.1
qVB for VBE

0.2
55C to 25C
0.5
1.0 2.0
5.0
10 20
50
100
2177
BCW29LT1 BCW30LT1
500
300
200
200
100
70
50
30
tr
20
10
7.0
5.0
1.0
100
70
50
tf
30
20
2.0
3.0
50 70
20 30
5.0 7.0 10
10
1.0
100
2.0 3.0 5.0 7.0 10

20 30
50 70 100
500
10
TJ = 25C
TJ = 25C
7.0
VCE = 20 V
300
Cib
C, CAPACITANCE (pF)
5.0 V
200
100
5.0
3.0
2.0
Cob
70
50
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
1.0
0.05
50
0.2
0.5
1.0
2.0
5.0
3.0
VCE = 10 Vdc
f = 1.0 kHz
TA = 25C
2.0
1.0
0.7
0.5
0.3
BCW29LT1
hfe 200
@ IC = 1.0 mA
7.0
5.0
0.2
0.1
10
20
50
200
10
100
70
50
30
20
VCE = 10 Vdc
f = 1.0 kHz
TA = 25C
BCW29LT1
hfe 200
@ IC = 1.0 mA
10
7.0
5.0
3.0
0.2
0.5
20
1.0 2.0
5.0
10
2178
0.1
20
VCC = 3.0 V
IC/IB = 10
IB1 = IB2
TJ = 25C
ts
300
t, TIME (ns)
t, TIME (ns)
1000
700
500
VCC = 3.0 V
IC/IB = 10
TJ = 25C
50
100
2.0
0.1
0.2
0.5
20
1.0 2.0
5.0
10
50
100

(NORMALIZED)
BCW29LT1 BCW30LT1
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
FIGURE 19
0.05
P(pk)
0.02
0.03
0.02
t1
0.01
0.01
0.01 0.02
SINGLE PULSE
0.05
0.1
0.2
0.5
1.0
t2
2.0
5.0
10
20
50
t, TIME (ms)
100 200

PULSE TRAIN SHOWN
ZJA(t) = r(t) RJA
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 k 100 k
104
VCC = 30 V
103
ICEO
102
101
ICBO
AND
100
101
102
4
0
2
0
+ 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160


Example:
The BCW29LT1 is dissipating 2.0 watts peak under the following
conditions:
t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)
r(t) is 0.22.
T = r(t) x P(pk) x RJA = 0.22 x 2.0 x 200 = 88C.
2179
MOTOROLA

NPN Silicon
BCW33LT1
COLLECTOR
3
1
BASE
3
1
2
EMITTER

SOT 23 (TO 236AB)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
20
Vdc
VCBO
30
Vdc
VEBO
5.0
Vdc
IC
100
mAdc
Symbol
Max
Unit
Total Device Dissipation FR 5 Board(1)

TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
RqJA
556
C/W
PD
300
mW
2.4
mW/C
RqJA
417
C/W
TJ, Tstg
55 to +150
Characteristic

Alumina Substrate,(2) TA = 25C
Derate above 25C
DEVICE MARKING
BCW33LT1 = D3

Characteristic
Symbol
Min
Max
Unit

(IC = 2.0 mAdc, IB = 0)
V(BR)CEO
32
Vdc

(IC = 10 mAdc, IB = 0)
V(BR)CBO
32
Vdc

(IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
Vdc
100
10
nAdc
Adc
OFF CHARACTERISTICS

(VCB = 32 Vdc, IE = 0)
(VCB = 32 Vdc, IE = 0, TA = 100C)
0.062 in.
0.024 in. 99.5% alumina.
ICBO
1. FR 5 = 1.0
0.75
2. Alumina = 0.4
0.3
2180
BCW33LT1
Characteristic
Symbol
Min
Max
Unit
420
800
0.25
0.55
0.70
Cobo
4.0
pF
NF
10
dB
ON CHARACTERISTICS
DC Current Gain
hFE

VCE(sat)

VBE(on)
Vdc
Vdc

Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Noise Figure
(VCE = 5.0 Vdc, IC = 0.2 mAdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz)
EQUIVALENT SWITCHING TIME TEST CIRCUITS

+ 3.0 V
300 ns
DUTY CYCLE = 2%
275
+10.9 V
+ 3.0 V
10 < t1 < 500 s

DUTY CYCLE = 2%
t1
+10.9 V
10 k
0.5 V
<1.0 ns
275
10 k
0
CS < 4.0 pF*
9.1 V
< 1.0 ns
1N916
CS < 4.0 pF*
*Total shunt capacitance of test jig and connectors
2181
BCW33LT1
(VCE = 5.0 Vdc, TA = 25C)
20
100
BANDWIDTH = 1.0 Hz
RS = 0
50
300 A
10
IC = 1.0 mA
100 A
7.0
5.0
10 A
3.0
20
300 A
100 A
10
5.0
2.0
1.0
30 A
0.5
30 A
BANDWIDTH = 1.0 Hz
RS
IC = 1.0 mA
10 A
0.2
2.0
0.1
10
20
50
100 200
500 1 k
f, FREQUENCY (Hz)
2k
5k
10 k
10
20
50
100 200
500 1 k
f, FREQUENCY (Hz)
2k
5k
10 k

(VCE = 5.0 Vdc, TA = 25C)
BANDWIDTH = 1.0 Hz
200 k
100 k
50 k
500 k
20 k
10 k
5k
2.0 dB
2k
1k
500
3.0 dB 4.0 dB
6.0 dB
10 dB
200
100
50
1M
500 k
BANDWIDTH = 1.0 Hz
200 k
100 k
50 k
20 k
10 k
1.0 dB
5k
2.0 dB
2k
1k
500
5.0 dB
200
100
10
20
30
50 70 100
200 300
500 700
1k
8.0 dB
10
20
500 k
3.0 dB
30
50 70 100
200 300
500 700
1k
10 Hz to 15.7 kHz
200 k
100 k
50 k
Noise Figure is defined as:
20 k
10 k
5k
NF
1.0 dB
2k
1k
500
3.0 dB
5.0 dB
8.0 dB
10
20
30
50 70 100
200 300
500 700
en2
4KTRS

2.0 dB
200
100
50
+ 20 log10
1k
Figure 7. Wideband
2182
BCW33LT1
1.0
100
BCW33LT1
TJ = 25C
0.8
IC = 1.0 mA
0.6
10 mA
50 mA
100 mA
0.4
0.2
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
TA = 25C
PULSE WIDTH = 300 s
80 DUTY CYCLE 2.0%
300 A
200 A
40
100 A
20
0
5.0 10
20
5.0
10
15
20
25
30
35
TJ = 25C
V, VOLTAGE (VOLTS)
1.2
1.0
0.6
0.4
0.2
0
0.2
0.5 1.0
2.0
5.0
10
20
40
1.4
0.1
400 A
60
0.8
IB = 500 A
50
100
1.6
0.8
25C to 125C
0
*qVC for VCE(sat)

55C to 25C
0.8
25C to 125C
1.6
qVB for VBE

2.4
0.1
0.2
55C to 25C
0.5
1.0 2.0
5.0 10 20
50
100
2183
BCW33LT1
1000
VCC = 3.0 V
IC/IB = 10
TJ = 25C
100
70
50
700
500
ts
300
200
t, TIME (ns)
t, TIME (ns)
300
200
tr
30
20
td @ VBE(off) = 0.5 Vdc
10
7.0
5.0
100
70
50
tf
30
VCC = 3.0 V
IC/IB = 10
IB1 = IB2
TJ = 25C
20
3.0
1.0
2.0
50 70
20 30
5.0 7.0 10
3.0
10
1.0
100
2.0
3.0
50
70 100
500
10
TJ = 25C
f = 100 MHz
TJ = 25C
f = 1.0 MHz
7.0
300
200
C, CAPACITANCE (pF)
VCE = 20 V
5.0 V
100

(NORMALIZED)
20 30
5.0 7.0 10
Cib
5.0
Cob
3.0
2.0
70
50
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
50
1.0
0.05
0.1
0.2
0.5
1.0
2.0
5.0
1.0
0.7
0.5
10
20
50
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
FIGURE 19A
0.05
P(pk)
0.02
0.03
0.02
t1
0.01
0.01
0.01 0.02
SINGLE PULSE
0.05
0.1
0.2
0.5
1.0
t2
2.0
5.0
10
20
50
t, TIME (ms)
100 200

PULSE TRAIN SHOWN
ZJA(t) = r(t) RJA
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 k 100 k
2184
BCW33LT1
104
VCC = 30 Vdc
103
102
ICEO
101
ICBO
AND
ICEX @ VBE(off) = 3.0 Vdc
100
101
102
4
0
2
0
+ 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160


as shown in Figure 16A. Using the model and the device thermal
Example:
The MPS3904 is dissipating 2.0 watts peak under the following
conditions:
t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2)
r(t) is 0.22.
T = r(t) x P(pk) x RJA = 0.22 x 2.0 x 200 = 88C.
Figure 16A.
2185
MOTOROLA
BCW60ALT1
BCW60BLT1
BCW60DLT1

NPN Silicon
COLLECTOR
3
1
BASE
2
EMITTER
1
2

SOT 23 (TO 236AB)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
32
Vdc
VCBO
32
Vdc
VEBO
5.0
Vdc
IC
100
mAdc
Symbol
Max
Unit

TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
Thermal Resistance Junction to Ambient
RqJA
556
C/W
PD
300
mW
2.4
mW/C
RqJA
417
C/W
TJ, Tstg
55 to +150
Characteristic

Derate above 25C
DEVICE MARKING
BCW60ALT1 = AA, BCW60BLT1 = AB, BCW60DLT1 = AD

Symbol
Min
Max
Unit

(IC = 2.0 mAdc, IE = 0)
V(BR)CEO
32
Vdc

(IE = 1.0 mAdc, IC = 0)
V(BR)EBO
5.0
Vdc
20
20
nAdc
Adc
20
Characteristic
OFF CHARACTERISTICS

(VCE = 32 Vdc)
(VCE = 32 Vdc, TA = 150C)
ICES

(VEB = 4.0 Vdc, IC = 0)
IEBO
nAdc
0.062 in.
0.024 in. 99.5% alumina.
1. FR 5 = 1.0
0.75
2. Alumina = 0.4
0.3
2186
BCW60ALT1 BCW60BLT1 BCW60DLT1

Characteristic
Symbol
Min
Max
BCW60A
BCW60B
BCW60D
20
30
100
BCW60A
BCW60B
BCW60D
120
175
380
220
310
630
BCW60A
BCW60B
BCW60D
60
70
100
125
175
350
250
350
700
0.55
0.35
0.7
0.6
1.05
0.85
0.6
0.75
125
4.5
6.0
150
800
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 10 Adc, VCE = 5.0 Vdc)
hFE
AC Current Gain
(VCE = 5.0 Vdc, IC = 2.0 mAdc, f = 1.0 kHz)
hfe
BCW60A
BCW60B
BCW60D

VCE(sat)

VBE(sat)

VBE(on)
Vdc
Vdc
Vdc

fT
Output Capacitance
(VCE = 10 Vdc, IC = 0, f = 1.0 MHz)
MHz
Cobo
Noise Figure
pF
NF
dB
TurnOn Time
(IC = 10 mAdc, IB1 = 1.0 mAdc)
ton
TurnOff Time
(IB2 = 1.0 mAdc, VBB = 3.6 Vdc, R1 = R2 = 5.0 k, RL = 990 )
toff
ns
ns

+ 3.0 V
300 ns
DUTY CYCLE = 2%
275
+10.9 V
+ 3.0 V
10 < t1 < 500 s

DUTY CYCLE = 2%
t1
+10.9 V
10 k
0.5 V
<1.0 ns
275
10 k
0
CS < 4.0 pF*
9.1 V
< 1.0 ns
1N916
CS < 4.0 pF*
2187

(VCE = 5.0 Vdc, TA = 25C)
20
100
BANDWIDTH = 1.0 Hz
RS = 0
50
300 A
10
IC = 1.0 mA
100 A
7.0
5.0
10 A
3.0
20
300 A
100 A
10
5.0
2.0
1.0
30 A
0.5
30 A
BANDWIDTH = 1.0 Hz
RS
IC = 1.0 mA
10 A
0.2
2.0
0.1
10
20
50
100 200
500 1 k
f, FREQUENCY (Hz)
2k
5k
10 k
10
20
50
100 200
500 1 k
f, FREQUENCY (Hz)
2k
5k
10 k

(VCE = 5.0 Vdc, TA = 25C)
BANDWIDTH = 1.0 Hz
200 k
100 k
50 k
500 k
20 k
10 k
5k
2.0 dB
2k
1k
500
3.0 dB 4.0 dB
6.0 dB
10 dB
200
100
50
1M
500 k
BANDWIDTH = 1.0 Hz
200 k
100 k
50 k
20 k
10 k
1.0 dB
5k
2.0 dB
2k
1k
500
5.0 dB
200
100
10
20
30
50 70 100
200 300
500 700
1k
8.0 dB
10
20
500 k
3.0 dB
30
50 70 100
200 300
500 700
1k
10 Hz to 15.7 kHz
200 k
100 k
50 k
20 k
10 k
5k
NF
1.0 dB
2k
1k
500
3.0 dB
5.0 dB
8.0 dB
10
20
30
50 70 100
200 300
500 700
en2
4KTRS

2.0 dB
200
100
50
+ 20 log10
1k
Figure 7. Wideband
2188

400
TJ = 125C
25C
200
55C
100
80
60
VCE = 1.0 V
VCE = 10 V
40
0.004 0.006 0.01
0.02 0.03
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
20
30
50
70 100
100
1.0
TJ = 25C
0.8
IC = 1.0 mA
0.6
10 mA
50 mA
100 mA
0.4
0.2
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
TA = 25C
PULSE WIDTH = 300 s
80 DUTY CYCLE 2.0%
300 A
200 A
40
100 A
20
0
5.0 10
20
5.0
10
15
20
25
30
35
TJ = 25C
V, VOLTAGE (VOLTS)
1.2
1.0
0.6
0.4
0.2
0
0.2
2.0
5.0
10
20
0.5 1.0
40
1.4
0.1
400 A
60
0.8
IB = 500 A
50
100
1.6
0.8
25C to 125C
0
*qVC for VCE(sat)

55C to 25C
0.8
25C to 125C
1.6
qVB for VBE

2.4
0.1
0.2
55C to 25C
0.5
1.0 2.0
5.0 10 20
50
100
2189

1000
VCC = 3.0 V
IC/IB = 10
TJ = 25C
100
70
50
700
500
ts
300
200
t, TIME (ns)
t, TIME (ns)
300
200
tr
30
20
10
7.0
5.0
100
70
50
tf
30
VCC = 3.0 V
IC/IB = 10
IB1 = IB2
TJ = 25C
20
3.0
1.0
2.0
50 70
20 30
5.0 7.0 10
3.0
10
1.0
100
2.0
3.0
500
70 100
10
TJ = 25C
f = 100 MHz
TJ = 25C
f = 1.0 MHz
7.0
300
VCE = 20 V
200
5.0 V
100
Cib
5.0
Cob
3.0
2.0
70
50
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
1.0
0.05
50
0.2
0.5
1.0
2.0
5.0
VCE = 10 Vdc
f = 1.0 kHz
TA = 25C
3.0
2.0
1.0
0.7
0.5
0.3
hfe 200 @ IC = 1.0 mA
7.0
5.0
0.2
0.1
10
20
50
200
10
100
70
50
VCE = 10 Vdc
f = 1.0 kHz
TA = 25C
hfe 200 @ IC = 1.0 mA
30
20
10
7.0
5.0
3.0
0.2
0.5
20
1.0 2.0
5.0
10
2190
0.1
20
50
C, CAPACITANCE (pF)
20 30
5.0 7.0 10
50
100
2.0
0.1
0.2
0.5
20
1.0 2.0
5.0
10
50
100

(NORMALIZED)

1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
FIGURE 19A
0.05
P(pk)
0.02
0.03
0.02
t1
0.01
0.01
0.01 0.02
SINGLE PULSE
0.05
0.1
0.2
0.5
t2
1.0
2.0
5.0
10
20
50
t, TIME (ms)
100 200

PULSE TRAIN SHOWN
ZJA(t) = r(t) RJA
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 k 100 k
104
VCC = 30 Vdc

103
102
ICEO
101
Example:
conditions:
t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2)
r(t) is 0.22.
ICBO
AND
100
101
102
4
0
2
0
+ 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160


T = r(t) x P(pk) x RJA = 0.22 x 2.0 x 200 = 88C.
Figure 19A.
400
1.0 ms
200
100
60
40
TC = 25C
dc
dc
TJ = 150C
10
CURRENT LIMIT
THERMAL LIMIT
6.0
2.0

applicable curve.
10 s
1.0 s
TA = 25C
20
4.0
100 s
4.0
6.0 8.0 10
20
40
Figure 20.
2191
MOTOROLA
BCW61BLT1
BCW61CLT1
BCW61DLT1

PNP Silicon
COLLECTOR
3
1
BASE
2
EMITTER
1
2

SOT 23 (TO 236AB)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
32
Vdc
VCBO
32
Vdc
VEBO
5.0
Vdc
IC
100
mAdc
Symbol
Max
Unit

TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
RqJA
556
C/W
PD
300
mW
2.4
mW/C
RqJA
417
C/W
TJ, Tstg
55 to +150
Characteristic

Derate above 25C
DEVICE MARKING
BCW61BLT1 = BB, BCW61CLT1 = BC, BCW61DLT1 = BD

Symbol
Min
Max
Unit

(IC = 2.0 mAdc, IB = 0)
V(BR)CEO
32
Vdc

(IE = 1.0 mAdc, IC = 0)
V(BR)EBO
5.0
Vdc
20
20
nAdc
Adc
Characteristic
OFF CHARACTERISTICS

(VCE = 32 Vdc)
(VCE = 32 Vdc, TA = 150C)
0.062 in.
0.024 in. 99.5% alumina.
ICES
1. FR 5 = 1.0
0.75
2. Alumina = 0.4
0.3
2192
BCW61BLT1 BCW61CLT1 BCW61DLT1

Characteristic
Symbol
Min
Max
BCW61B
BCW61C
BCW61D
30
40
100
BCW61B
BCW61C
BCW61D
140
250
380
310
460
630
BCW61B
BCW61C
BCW61D
80
100
100
175
250
350
350
500
700
0.55
0.25
0.68
0.6
1.05
0.85
0.6
0.75
6.0
6.0
150
800
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 10 Adc, VCE = 5.0 Vdc)
AC Current Gain
(VCE = 5.0 Vdc, IC = 2.0 mAdc, f = 1.0 kHz)
hFE
hfe
BCW61B
BCW61C
BCW61D

VCE(sat)

VBE(sat)

VBE(on)
Vdc
Vdc
Vdc

Output Capacitance
(VCE = 10 Vdc, IC = 0, f = 1.0 MHz)
Noise Figure
Cobo
pF
NF
dB
TurnOn Time
ton
TurnOff Time
(IB2 = 1.0 mAdc, VBB = 3.6 Vdc, R1 = R2 = 5.0 k, RL = 990 )
toff
ns
ns
2193

(VCE = 5.0 Vdc, TA = 25C)
10
7.0
IC = 10 A
5.0
1.0
7.0
5.0
BANDWIDTH = 1.0 Hz
RS 0
30 A
3.0
100 A
300 A
1.0 mA
2.0
BANDWIDTH = 1.0 Hz
RS
IC = 1.0 mA
3.0
2.0
300 A
1.0
0.7
0.5
100 A
30 A
0.3
0.2
1.0
10 A
0.1
10
20
50
100 200
500 1.0 k
f, FREQUENCY (Hz)
2.0 k
5.0 k
10
10 k
20
50
100 200
500 1.0 k 2.0 k
f, FREQUENCY (Hz)
5.0 k
10 k
1.0 M
500 k
BANDWIDTH = 1.0 Hz
(VCE = 5.0 Vdc, TA = 25C)
200 k
100 k
50 k
20 k
10 k
0.5 dB
5.0 k
1.0 dB
2.0 k
1.0 k
500
2.0 dB
3.0 dB
200
100
20
30
50 70 100
200 300
BANDWIDTH = 1.0 Hz
200 k
100 k
50 k
20 k
10 k
0.5 dB
5.0 k
1.0 dB
2.0 k
1.0 k
500
2.0 dB
3.0 dB
200
100
5.0 dB
10
1.0 M
500 k
500 700 1.0 k
5.0 dB
10
20
1.0 M
500 k
30
50 70 100
200 300
500 700 1.0 k
10 Hz to 15.7 kHz
200 k
100 k
50 k
20 k
10 k
NF
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
200
100
10
20
30
50 70 100
200 300
en2
4KTRS

5.0 k
2.0 k
1.0 k
500
+ 20 log10
500 700 1.0 k
Figure 5. Wideband
2194
1.0
100
TA = 25C
BCW61
0.8
IC = 1.0 mA
0.6
10 mA
50 mA
100 mA
0.4
0.2
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
TA = 25C
PULSE WIDTH = 300 s
80 DUTY CYCLE 2.0%
300 A
150 A
40
100 A
50 A
20
0
5.0 10
20
5.0
10
15
20
25
30
35
TJ = 25C
V, VOLTAGE (VOLTS)
1.2
1.0
0.8
0.6
0.4
0.2
0
0.5 1.0
2.0
5.0
10
20
40
1.4
0.2
250 A
200 A
60
0.1
IB = 400 A
350 A
50
100
1.6
0.8
*qVC for VCE(sat)
25C to 125C
0
55C to 25C
0.8
25C to 125C
1.6
2.4
0.1
qVB for VBE

0.2
55C to 25C
0.5
1.0 2.0
5.0
10 20
50
100
2195

500
300
200
200
100
70
50
30
tr
20
100
70
50
10
7.0
5.0
1.0
tf
30
20
2.0
3.0
50 70
20 30
5.0 7.0 10
10
1.0
100
2.0 3.0 5.0 7.0 10

20 30
50 70 100
500
10
TJ = 25C
TJ = 25C
7.0
VCE = 20 V
300
Cib
C, CAPACITANCE (pF)
5.0 V
200
100

(NORMALIZED)
VCC = 3.0 V
IC/IB = 10
IB1 = IB2
TJ = 25C
ts
300
t, TIME (ns)
t, TIME (ns)
1000
700
500
VCC = 3.0 V
IC/IB = 10
TJ = 25C
5.0
3.0
2.0
Cob
70
50
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
50
1.0
0.05
0.1
0.2
0.5
1.0
2.0
5.0
1.0
0.7
0.5
10
20
50
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
FIGURE 19
0.05
P(pk)
0.02
0.03
0.02
t1
0.01
0.01
0.01 0.02
SINGLE PULSE
0.05
0.1
0.2
0.5
1.0
t2
2.0
5.0
10
20
50
t, TIME (ms)
100 200

PULSE TRAIN SHOWN
ZJA(t) = r(t) RJA
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 k 100 k
2196

104
VCC = 30 V
103
ICEO
102
101
ICBO
AND
100
101
102
4
0
2
0
+ 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160


Example:
conditions:
t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)
r(t) is 0.22.
T = r(t) x P(pk) x RJA = 0.22 x 2.0 x 200 = 88C.
2197
MOTOROLA

NPN Silicon
BCW65ALT1
COLLECTOR
3
1
BASE
3
1
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
32
Vdc
VCBO
60
Vdc
VEBO
5.0
Vdc
IC
800
mAdc
Symbol
Max
Unit

TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
RqJA
556
C/W
PD
300
mW
2.4
mW/C
RqJA
417
C/W
TJ, Tstg
55 to +150

SOT 23 (TO 236AB)
Characteristic

Derate above 25C
DEVICE MARKING
BCW65ALT1 = EA

Characteristic
Symbol
Min
Typ
Max
Unit

(IC = 10 mAdc, IB = 0)
V(BR)CEO
32
Vdc

(IC = 10 mAdc, VEB = 0)
V(BR)CES
60
Vdc

(IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
Vdc
20
20
nAdc
Adc
20
nAdc
OFF CHARACTERISTICS

(VCE = 32 Vdc, IE = 0)
(VCE = 32 Vdc, IE = 0, TA = 150C)
ICES

(VEB = 4.0 Vdc, IC = 0)
IEBO
0.062 in.
0.024 in. 99.5% alumina.
1. FR 5 = 1.0
0.75
2. Alumina = 0.4
0.3
2198
BCW65ALT1
Characteristic
Symbol
Min
Typ
Max
Unit
35
75
100
35
220
250
0.7
0.3
2.0
fT
100
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
12
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
80
pF
NF
10
dB
TurnOn Time
(IB1 = IB2 = 15 mAdc)
ton
100
ns
TurnOff Time
(IC = 150 mAdc, RL = 150 )
toff
400
ns
ON CHARACTERISTICS
DC Current Gain
(IC = 100 Adc, VCE = 10 Vdc)
hFE

VCE(sat)

VBE(sat)
Vdc
Vdc

Noise Figure
2199
MOTOROLA

PNP Silicon
BCW68GLT1
COLLECTOR
3
1
BASE
3
1
2
EMITTER

SOT 23 (TO 236AB)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
45
Vdc
VCBO
60
Vdc
EmitterBase Voltage
VEBO
5.0
Vdc
IC
800
mAdc
DEVICE MARKING
BCW68GLT1 = DH
Characteristic
Symbol
Max
Unit
PD
225
mW
1.8
mW/C
RJA
556
C/W
PD
300
mW
2.4
mW/C
RJA
417
C/W
TJ, Tstg
55 to +150

TA = 25C
Derate above 25C
Derate above 25C

Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)CEO
45
Vdc
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
CollectorEmitter Breakdown Voltage (IC = 10 Adc, VEB = 0)
V(BR)CES
60
Vdc
EmitterBase Breakdown Voltage (IE = 10 Adc, IC = 0)
V(BR)EBO
5.0
Vdc
20
10
nAdc
Adc
20
nAdc

(VCE= 45 Vdc, IE = 0)
(VCE= 45 Vdc, IB = 0, TA = 150C)
ICES
Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0)
IEBO
1. FR5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
2200
BCW68GLT1
Characteristic
Symbol
Min
Typ
Max
120
160
60
400
Unit
ON CHARACTERISTICS
DC Current Gain
hFE
CollectorEmitter Saturation Voltage (IC = 300 mAdc, IB = 30 mAdc)
VCE(sat)
1.5
Vdc
BaseEmitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc)
VBE(sat)
2.0
Vdc
fT
100
MHz
Output Capacitance
(VCB= 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
18
pF
Input Capacitance
(VEB= 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
105
pF
NF
10
dB
Noise Figure
(IC= 0.2 mAdc, VCE = 5.0 Vdc, RS = 1.0 k, f = 1.0 kHz,
BW = 200 Hz)
2201
MOTOROLA
BCW69LT1
BCW70LT1
PNP Silicon
COLLECTOR
3
1
BASE
3
1
2
EMITTER

SOT 23 (TO 236AB)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
45
Vdc
EmitterBase Voltage
VEBO
5.0
Vdc
IC
100
mAdc
DEVICE MARKING
BCW69LT1 = H1; BCW70LT1 = H2
Characteristic
TA = 25C
Derate above 25C
Derate above 25C
Symbol
Max
Unit
PD
225
mW
1.8
mW/C
RJA
556
C/W
PD
300
mW
2.4
mW/C
RJA
417
C/W
TJ, Tstg
55 to +150

Symbol
Min
Max
Unit
V(BR)CEO
45
Vdc
CollectorEmitter Breakdown Voltage (IC = 100 Adc, VEB = 0)
V(BR)CES
50
Vdc
V(BR)EBO
5.0
Vdc
100
10
nAdc
Adc
Characteristic
OFF CHARACTERISTICS

(VCB = 20 Vdc, IE = 0)
(VCB = 20 Vdc, IE = 0, TA = 100C)
ICBO
1. FR5 = 1.0 x 0.75 x 0.062 in.

2202
BCW69LT1 BCW70LT1
Characteristic
Symbol
Min
Max
120
215
260
500
Unit
ON CHARACTERISTICS
DC Current Gain
hFE
BCW69
BCW70
CollectorEmitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc)
VCE(sat)
0.3
Vdc
BaseEmitter On Voltage (IC = 2.0 mAdc, VCE = 5.0 Vdc)
VBE(on)
0.6
0.75
Vdc
Cobo
7.0
pF
NF
10
dB
Output Capacitance
(IE = 0, VCB = 10 Vdc, f = 1.0 MHz)
Noise Figure
2203
BCW69LT1 BCW70LT1
(VCE = 5.0 Vdc, TA = 25C)
10
7.0
IC = 10 A
5.0
1.0
7.0
5.0
BANDWIDTH = 1.0 Hz
RS 0
30 A
3.0
100 A
300 A
1.0 mA
2.0
BANDWIDTH = 1.0 Hz
RS
IC = 1.0 mA
3.0
2.0
300 A
1.0
0.7
0.5
100 A
30 A
0.3
0.2
1.0
10 A
0.1
10
20
50
100 200
500 1.0 k
f, FREQUENCY (Hz)
2.0 k
5.0 k
10
10 k
20
50
100 200
500 1.0 k 2.0 k
f, FREQUENCY (Hz)
5.0 k
10 k
1.0 M
500 k
BANDWIDTH = 1.0 Hz
(VCE = 5.0 Vdc, TA = 25C)
200 k
100 k
50 k
20 k
10 k
0.5 dB
5.0 k
1.0 dB
2.0 k
1.0 k
500
2.0 dB
3.0 dB
200
100
20
30
50 70 100
200 300
BANDWIDTH = 1.0 Hz
200 k
100 k
50 k
20 k
10 k
0.5 dB
5.0 k
1.0 dB
2.0 k
1.0 k
500
2.0 dB
3.0 dB
200
100
5.0 dB
10
1.0 M
500 k
500 700 1.0 k
5.0 dB
10
20
1.0 M
500 k
30
50 70 100
200 300
500 700 1.0 k
10 Hz to 15.7 kHz
200 k
100 k
50 k
20 k
10 k
NF
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
200
100
10
20
30
50 70 100
200 300
en2
4KTRS

5.0 k
2.0 k
1.0 k
500
+ 20 log10
500 700 1.0 k
Figure 5. Wideband
2204
BCW69LT1 BCW70LT1
1.0
100
TA = 25C
0.8
IC = 1.0 mA
0.6
10 mA
50 mA
100 mA
0.4
0.2
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
TA = 25C
PULSE WIDTH = 300 s
80 DUTY CYCLE 2.0%
300 A
150 A
40
100 A
50 A
20
0
5.0 10
20
5.0
10
15
20
25
30
35
TJ = 25C
V, VOLTAGE (VOLTS)
1.2
1.0
0.8
0.6
0.4
0.2
0
0.5 1.0
2.0
5.0
10
20
40
1.4
0.2
250 A
200 A
60
0.1
IB = 400 A
350 A
50
100
1.6
0.8
*qVC for VCE(sat)
25C to 125C
0
55C to 25C
0.8
25C to 125C
1.6
2.4
0.1
qVB for VBE

0.2
55C to 25C
0.5
1.0 2.0
5.0
10 20
50
100
2205
BCW69LT1 BCW70LT1
500
300
200
200
100
70
50
30
tr
20
100
70
50
10
7.0
5.0
1.0
tf
30
20
2.0
3.0
50 70
20 30
5.0 7.0 10
10
1.0
100
2.0 3.0 5.0 7.0 10

20 30
50 70 100
500
10
TJ = 25C
TJ = 25C
7.0
VCE = 20 V
300
Cib
C, CAPACITANCE (pF)
5.0 V
200
100

(NORMALIZED)
VCC = 3.0 V
IC/IB = 10
IB1 = IB2
TJ = 25C
ts
300
t, TIME (ns)
t, TIME (ns)
1000
700
500
VCC = 3.0 V
IC/IB = 10
TJ = 25C
5.0
3.0
2.0
Cob
70
50
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
50
1.0
0.05
0.1
0.2
0.5
1.0
2.0
5.0
1.0
0.7
0.5
10
20
50
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
FIGURE 16
0.05
P(pk)
0.02
0.03
0.02
t1
0.01
0.01
0.01 0.02
SINGLE PULSE
0.05
0.1
0.2
0.5
1.0
t2
2.0
5.0
10
20
50
t, TIME (ms)
100 200

PULSE TRAIN SHOWN
ZJA(t) = r(t) RJA
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 k 100 k
2206
BCW69LT1 BCW70LT1
104
VCC = 30 V
101

Example:
Dissipating 2.0 watts peak under the following conditions:
t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)
r(t) is 0.22.
102

T = r(t) x P(pk) x RJA = 0.22 x 2.0 x 200 = 88C.
103
ICEO
102
101
ICBO
AND
100
4
0
2
0
+ 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160

2207
MOTOROLA
BCW72LT1
NPN Silicon
COLLECTOR
3
1
BASE
3
1
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
45
Vdc
VCBO
50
Vdc
VEBO
5.0
Vdc
IC
100
mAdc

SOT 23 (TO 236AB)
Characteristic
Symbol
Max
Unit

TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
RqJA
556
C/W
PD
300
mW
2.4
mW/C
RqJA
417
C/W
TJ, Tstg
55 to +150

Derate above 25C
DEVICE MARKING
BCW72LT1 = K2

Characteristic
Symbol
Min
Typ
Max
Unit

(IC = 2.0 mAdc, VEB = 0)
V(BR)CEO
45
Vdc

(IC = 2.0 mAdc, VEB = 0)
V(BR)CES
45
Vdc

(IC = 10 mAdc, IE = 0)
V(BR)CBO
50
Vdc

(IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
Vdc
100
10
nAdc
mAdc
OFF CHARACTERISTICS

(VCB = 20 Vdc, IE = 0)
(VCB = 20 Vdc, IE = 0, TA = 100C)
0.062 in.
0.024 in. 99.5% alumina.
ICBO
1. FR 5 = 1.0
0.75
2. Alumina = 0.4
0.3
2208
BCW72LT1
Characteristic
Symbol
Min
Typ
Max
Unit
200
450
0.21
0.25
0.85
0.6
0.75
fT
300
MHz
Output Capacitance
(IE = 0, VCB = 10 Vdc, f = 1.0 MHz)
Cobo
4.0
pF
Input Capacitance
(IE = 0, VCB = 10 Vdc, f = 1.0 MHz)
Cibo
9.0
pF
NF
10
dB
ON CHARACTERISTICS
DC Current Gain
hFE

VCE(sat)

VBE(sat)

VBE(on)
Vdc
Vdc
Vdc

Noise Figure
(IC = 0.2 mAdc, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz,
BW = 200 Hz)

+ 3.0 V
300 ns
DUTY CYCLE = 2%
+10.9 V
+ 3.0 V
10 < t1 < 500 s

DUTY CYCLE = 2%
275
t1
+10.9 V
10 k
275
10 k
0.5 V
<1.0 ns
CS < 4.0 pF*
9.1 V
< 1.0 ns
CS < 4.0 pF*
1N916

(VCE = 5.0 Vdc, TA = 25C)
20
100
BANDWIDTH = 1.0 Hz
RS = 0
50
300 A
10
IC = 1.0 mA
100 A
7.0
5.0
10 A
3.0
20
300 A
100 A
10
5.0
2.0
1.0
30 A
0.5
30 A
10 A
0.2
2.0
BANDWIDTH = 1.0 Hz
RS
IC = 1.0 mA
0.1
10
20
50
100 200
500 1 k
f, FREQUENCY (Hz)
2k
5k
10 k

10
20
50
100 200
500 1 k
f, FREQUENCY (Hz)
2k
5k
10 k

2209
BCW72LT1
(VCE = 5.0 Vdc, TA = 25C)
BANDWIDTH = 1.0 Hz
200 k
100 k
50 k
500 k
20 k
10 k
5k
2.0 dB
2k
1k
500
3.0 dB 4.0 dB
6.0 dB
10 dB
200
100
50
1M
500 k
BANDWIDTH = 1.0 Hz
200 k
100 k
50 k
20 k
10 k
1.0 dB
5k
2.0 dB
2k
1k
500
5.0 dB
200
100
10
20
30
50 70 100
200 300
500 700
1k
8.0 dB
10
20
500 k
3.0 dB
30
50 70 100
200 300
500 700
1k
10 Hz to 15.7 kHz
200 k
100 k
50 k
20 k
10 k
5k
NF
1.0 dB
2k
1k
500
3.0 dB
5.0 dB
8.0 dB
10
20
30
50 70 100
200 300
500 700
en2
4KTRS

2.0 dB
200
100
50
+ 20 log10
1k
Figure 7. Wideband
2210
BCW72LT1
400
TJ = 125C
25C
200
55C
100
80
60
VCE = 1.0 V
VCE = 10 V
40
0.004 0.006 0.01
0.02 0.03
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
20
30
50
70 100
100
1.0
TJ = 25C
0.8
IC = 1.0 mA
0.6
10 mA
50 mA
100 mA
0.4
0.2
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
TA = 25C
PULSE WIDTH = 300 s
80 DUTY CYCLE 2.0%
300 A
200 A
40
100 A
20
0
5.0 10
20
5.0
10
15
20
25
30
35
TJ = 25C
V, VOLTAGE (VOLTS)
1.2
1.0
0.6
0.4
0.2
0
0.2
2.0
5.0
10
20
0.5 1.0
40
1.4
0.1
400 A
60
0.8
IB = 500 A
50
100
1.6
0.8
25C to 125C
0
*qVC for VCE(sat)

55C to 25C
0.8
25C to 125C
1.6
qVB for VBE

2.4
0.1
0.2
55C to 25C
0.5
1.0 2.0
5.0 10 20
50
100
2211
BCW72LT1
1000
VCC = 3.0 V
IC/IB = 10
TJ = 25C
100
70
50
700
500
ts
300
200
t, TIME (ns)
t, TIME (ns)
300
200
tr
30
20
10
7.0
5.0
100
70
50
tf
30
VCC = 3.0 V
IC/IB = 10
IB1 = IB2
TJ = 25C
20
3.0
1.0
2.0
50 70
20 30
5.0 7.0 10
3.0
10
1.0
100
2.0
3.0
500
70 100
10
TJ = 25C
f = 100 MHz
TJ = 25C
f = 1.0 MHz
7.0
300
VCE = 20 V
200
5.0 V
100
Cib
5.0
Cob
3.0
2.0
70
50
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
1.0
0.05
50
0.2
0.5
1.0
2.0
5.0
VCE = 10 Vdc
f = 1.0 kHz
TA = 25C
3.0
2.0
1.0
0.7
0.5
0.3
hfe 200 @ IC = 1.0 mA
7.0
5.0
0.2
0.1
10
20
50
200
10
100
70
50
VCE = 10 Vdc
f = 1.0 kHz
TA = 25C
hfe 200 @ IC = 1.0 mA
30
20
10
7.0
5.0
3.0
0.2
0.5
20
1.0 2.0
5.0
10
2212
0.1
20
50
C, CAPACITANCE (pF)
20 30
5.0 7.0 10
50
100
2.0
0.1
0.2
0.5
20
1.0 2.0
5.0
10
50
100

(NORMALIZED)
BCW72LT1
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
FIGURE 19A
0.05
P(pk)
0.02
0.03
0.02
t1
0.01
0.01
0.01 0.02
SINGLE PULSE
0.05
0.1
0.2
0.5
t2
1.0
2.0
5.0
10
20
50
t, TIME (ms)
100 200

PULSE TRAIN SHOWN
ZJA(t) = r(t) RJA
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 k 100 k
104
VCC = 30 Vdc

103
102
ICEO
101
Example:
conditions:
t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2)
r(t) is 0.22.
ICBO
AND
100
101
102
4
0
2
0
+ 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160


T = r(t) x P(pk) x RJA = 0.22 x 2.0 x 200 = 88C.
Figure 19A.
400
1.0 ms
200
100
60
40
TC = 25C
dc
dc
TJ = 150C
10
CURRENT LIMIT
THERMAL LIMIT
6.0
2.0

applicable curve.
10 s
1.0 s
TA = 25C
20
4.0
100 s
4.0
6.0 8.0 10
20
40
Figure 20.
2213
MOTOROLA

COLLECTOR 3
General Purpose
Transistors
1
BASE
2 EMITTER
COLLECTOR 3
1
BASE
PNP
BCX17LT1
BCX18LT1
NPN
BCX19LT1
BCX20LT1
for PNP transistors
2 EMITTER
3
1
2

SOT 23 (TO 236AB)
MAXIMUM RATINGS
Value
Symbol
BCX17LT1
BCX19LT1
BCX18LT1
BCX20LT1
Unit
VCEO
45
25
Vdc
VCBO
50
30
Vdc
EmitterBase Voltage
VEBO
5.0
Vdc
IC
500
mAdc
Rating
DEVICE MARKING
BCX17LT1 = T1; BCX18LT1 = T2; BCX19LT1 = U1; BCX20LT1 = U2
Characteristic
TA = 25C
Derate above 25C
Derate above 25C
Symbol
Max
Unit
PD
225
mW
1.8
mW/C
RJA
556
C/W
PD
300
mW
2.4
mW/C
RJA
417
C/W
TJ, Tstg
55 to +150
1. FR5 = 1.0 x 0.75 x 0.062 in.

2214
PNP BCX17LT1 BCX18LT1 NPN BCX19LT1 BCX20LT1

Characteristic
Symbol
Min
Typ
Max
Unit
45
25
50
30
100
5.0
nAdc
Adc
10
Adc
100
70
40
600
OFF CHARACTERISTICS
(IC = 10 mAdc, IB = 0)
(IC = 10 Adc, IC = 0)
V(BR)CEO
BCX17, 19
BCX18, 20
Vdc
V(BR)CES
BCX17, 19
BCX18, 20

(VCB = 20 Vdc, IE = 0)
(VCB = 20 Vdc, IE = 0, TA = 150C)
ICBO

(VEB = 5.0 Vdc, IC = 0)
IEBO
Vdc
ON CHARACTERISTICS
DC Current Gain
hFE

VCE(sat)
0.62
Vdc
VBE(on)
1.2
Vdc
2215
MOTOROLA
BCX70GLT1
BCX70JLT1
BCX70KLT1

NPN Silicon
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
45
Vdc
VCBO
45
Vdc
VEBO
5.0
Vdc
IC
200
mAdc
Symbol
Max
Unit

TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
RqJA
556
C/W
PD
300
mW
2.4
mW/C
RqJA
417
C/W
TJ, Tstg
55 to +150

SOT 23 (TO 236AB)
Characteristic

Derate above 25C
DEVICE MARKING
BCX70GLT1 = AG; BCX70JLT1 = AJ; BCX70KLT1 = AK

Characteristic
Symbol
Min
Max
Unit

(IC = 2.0 mAdc, IE= 0)
V(BR)CEO
45
Vdc

(IE = 1.0 mAdc, IC = 0)
V(BR)EBO
5.0
Vdc
20
20
nAdc
mAdc
20
nAdc
OFF CHARACTERISTICS

(VCE = 32 Vdc)
(VCE = 32 Vdc, TA = 150C)
ICES

(VEB = 4.0 Vdc, IC = 0)
IEBO
0.062 in.
0.024 in. 99.5% alumina.
1. FR 5 = 1.0
0.75
2. Alumina = 0.4
0.3
2216
BCX70GLT1 BCX70JLT1 BCX70KLT1

Characteristic
Symbol
Min
Max
BCX70G
BCX70J
BCX70K
40
100
BCX70G
BCX70J
BCX70K
120
250
380
220
460
630
BCX70G
BCX70J
BCX70K
60
90
100
0.55
0.35
0.7
0.6
1.05
0.85
Unit
ON CHARACTERISTICS
DC Current Gain
hFE

VCE(sat)
Vdc

VBE(sat)

VBE(on)
0.55
0.75
Vdc
fT
125
MHz
Cobo
4.5
pF
125
250
350
250
500
700
NF
6.0
dB
TurnOn Time
ton
150
ns
TurnOff Time
(IB2 = 1.0 mAdc, VBB = 3.6 Vdc, R1 = R2 = 5.0 k, RL = 990)
toff
800
ns
Vdc

Output Capacitance
(VCB = 10 Vdc, IC = 0, f = 1.0 MHz)
Small Signal Current Gain
hfe
BCX70G
BCX70J
BCX70K
Noise Figure

+ 3.0 V
300 ns
DUTY CYCLE = 2%
275
+10.9 V
+ 3.0 V
10 < t1 < 500 s

DUTY CYCLE = 2%
t1
+10.9 V
10 k
0.5 V
<1.0 ns
275
10 k
0
CS < 4.0 pF*
9.1 V
< 1.0 ns
1N916
CS < 4.0 pF*
2217

(VCE = 5.0 Vdc, TA = 25C)
20
100
BANDWIDTH = 1.0 Hz
RS = 0
50
300 A
10
IC = 1.0 mA
100 A
7.0
5.0
10 A
3.0
20
300 A
100 A
10
5.0
2.0
1.0
30 A
0.5
30 A
BANDWIDTH = 1.0 Hz
RS
IC = 1.0 mA
10 A
0.2
2.0
0.1
10
20
50
100 200
500 1 k
f, FREQUENCY (Hz)
2k
5k
10 k
10
20
50
100 200
500 1 k
f, FREQUENCY (Hz)
2k
5k
10 k

(VCE = 5.0 Vdc, TA = 25C)
BANDWIDTH = 1.0 Hz
200 k
100 k
50 k
500 k
20 k
10 k
5k
2.0 dB
2k
1k
500
3.0 dB 4.0 dB
6.0 dB
10 dB
200
100
50
1M
500 k
BANDWIDTH = 1.0 Hz
200 k
100 k
50 k
20 k
10 k
1.0 dB
5k
2.0 dB
2k
1k
500
5.0 dB
200
100
10
20
30
50 70 100
200 300
500 700
1k
8.0 dB
10
20
500 k
3.0 dB
30
50 70 100
200 300
500 700
1k
10 Hz to 15.7 kHz
200 k
100 k
50 k
20 k
10 k
5k
NF
1.0 dB
2k
1k
500
3.0 dB
5.0 dB
8.0 dB
10
20
30
50 70 100
200 300
500 700
en2
4KTRS

2.0 dB
200
100
50
+ 20 log10
1k
Figure 7. Wideband
2218

400
TJ = 125C
25C
200
55C
100
80
60
VCE = 1.0 V
VCE = 10 V
40
0.004 0.006 0.01
0.02 0.03
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
20
30
50
70 100
100
1.0
TJ = 25C
0.8
IC = 1.0 mA
0.6
10 mA
50 mA
100 mA
0.4
0.2
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
TA = 25C
PULSE WIDTH = 300 s
80 DUTY CYCLE 2.0%
300 A
200 A
40
100 A
20
0
5.0 10
20
5.0
10
15
20
25
30
35
TJ = 25C
V, VOLTAGE (VOLTS)
1.2
1.0
0.6
0.4
0.2
0
0.2
2.0
5.0
10
20
0.5 1.0
40
1.4
0.1
400 A
60
0.8
IB = 500 A
50
100
1.6
0.8
25C to 125C
0
*qVC for VCE(sat)

55C to 25C
0.8
25C to 125C
1.6
qVB for VBE

2.4
0.1
0.2
55C to 25C
0.5
1.0 2.0
5.0 10 20
50
100
2219

1000
VCC = 3.0 V
IC/IB = 10
TJ = 25C
100
70
50
700
500
ts
300
200
t, TIME (ns)
t, TIME (ns)
300
200
tr
30
20
10
7.0
5.0
100
70
50
tf
30
VCC = 3.0 V
IC/IB = 10
IB1 = IB2
TJ = 25C
20
3.0
1.0
2.0
50 70
20 30
5.0 7.0 10
3.0
10
1.0
100
2.0
3.0
500
70 100
10
TJ = 25C
f = 100 MHz
TJ = 25C
f = 1.0 MHz
7.0
300
VCE = 20 V
200
5.0 V
100
Cib
5.0
Cob
3.0
2.0
70
50
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
1.0
0.05
50
0.2
0.5
1.0
2.0
5.0
VCE = 10 Vdc
f = 1.0 kHz
TA = 25C
3.0
2.0
1.0
0.7
0.5
0.3
hfe 200 @ IC = 1.0 mA
7.0
5.0
0.2
0.1
10
20
50
200
10
100
70
50
VCE = 10 Vdc
f = 1.0 kHz
TA = 25C
hfe 200 @ IC = 1.0 mA
30
20
10
7.0
5.0
3.0
0.2
0.5
20
1.0 2.0
5.0
10
2220
0.1
20
50
C, CAPACITANCE (pF)
20 30
5.0 7.0 10
50
100
2.0
0.1
0.2
0.5
20
1.0 2.0
5.0
10
50
100

(NORMALIZED)

1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
FIGURE 19A
0.05
P(pk)
0.02
0.03
0.02
t1
0.01
0.01
0.01 0.02
SINGLE PULSE
0.05
0.1
0.2
0.5
t2
1.0
2.0
5.0
10
20
50
t, TIME (ms)
100 200

PULSE TRAIN SHOWN
ZJA(t) = r(t) RJA
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 k 100 k
104
VCC = 30 Vdc

103
102
ICEO
101
Example:
conditions:
t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2)
r(t) is 0.22.
ICBO
AND
100
101
102
4
0
2
0
+ 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160


T = r(t) x P(pk) x RJA = 0.22 x 2.0 x 200 = 88C.
Figure 19A.
400
1.0 ms
200
100
60
40
TC = 25C
dc
dc
TJ = 150C
10
CURRENT LIMIT
THERMAL LIMIT
6.0
2.0

applicable curve.
10 s
1.0 s
TA = 25C
20
4.0
100 s
4.0
6.0 8.0 10
20
40
Figure 20.
2221
MOTOROLA
One Watt Amplifier Transistor
BDB01C
NPN Silicon
COLLECTOR
3
2
BASE
1
1
EMITTER
CASE 2905, STYLE 1

TO92 (TO226AE)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
80
Vdc
VCES
80
Vdc
VEBO
5.0
Vdc
IC
0.5
Adc

@ TA = 25C
Derate above 25C
PD
1.0
8.0
Watt
mW/C

@ TC = 25C
Derate above 25C
PD
2.5
20
Watt
mW/C
TJ, Tstg
55 to
+150
Symbol
Max
Unit
RqJA
125
C/W
RqJC
50
C/W

Temperature Range
Characteristic

Characteristic
Symbol
Min
Max
80
0.01
100
Unit
OFF CHARACTERISTICS
(IC = 10 mA, IB = 0)
V(BR)CEO

(VCB = 80 V, IE = 0)
ICBO

(IC = 0, VEB = 5.0 V)
IEBO
Vdc
mAdc
nAdc
REV 1
2222
BDB01C
Characteristic
Symbol
Min
Max
40
25
400
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mA, VCE = 1.0 V)
(IC = 500 mA, VCE = 2.0 V)
hFE

(IC = 1000 mA, IB = 100 mA)
VCE(sat)
0.7
Vdc
Collector Emitter On Voltage(1)

(IC = 1000 mA, VCE = 1.0 V)
VBE(on)
1.2
Vdc
fT
50
MHz
Cob
30
pF
(IC = 200 mA, VCE = 5.0 V, f = 20 MHz)
Output Capacitance
(VCB = 10 V, IE = 0, f = 1.0 MHz)
v 300 ms, Duty Cycle 2.0%.
400
TJ = 125C
VCE = 1.0 V
200
25C
55C
100
80
60
40
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
300
500
1.0
1.0
TJ = 25C
TJ = 25C
0.8
0.6
0.8
IC = 10 mA
50
mA
100 mA
250 mA
V, VOLTAGE (VOLTS)
500 mA
0.4
0.2
0.6
0.4
0.2
0
0.05
0.1
0.2
1.0
0.5
2.0
5.0
10
20
50
0
0.5
1.0
2.0
20
5.0
10
50
100
200
500
2223
80
0.8
1.2
40
1.6
VB for VBE
2.0
2.4
Cibo
20
10
8.0
6.0
2.8
0.5
1.0
2.0
5.0
20
50
10
100
200
4.0
0.1
500
Cobo
0.2
0.5 1.0 2.0

5.0 10
20
50
100
300
200
VCE = 2.0 V
TJ = 25C
TJ = 25C
60
C, CAPACITANCE (pF)
VB, TEMPERATURE COEFFICIENT (mV/C)
BDB01C
100
70
50
DUTY CYCLE 10%

2k
3.0
5.0 7.0 10
20 30
50 70 100
2224
200
100 s
500
200
100
50
20
30
2.0
1.0 ms
1k
10
1.0
TA = 25C
TC = 25C
1.0 s
dc
dc
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN
BDB01C
LIMIT
2.0
5.0
10
20
45 60 80 100
Figure 7. Active RegionSafe Operating Area
MOTOROLA
One Watt Amplifier Transistors
BDB02C
PNP Silicon
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
80
Vdc
VCES
80
Vdc
VEBO
5.0
Vdc
IC
0.5
Adc

@ TA = 25C
Derate above 25C
PD
1.0
8.0
Watt
mW/C

@ TC = 25C
Derate above 25C
PD
2.5
20
Watt
mW/C
TJ, Tstg
55 to +150

Temperature Range
CASE 2905, STYLE 1

TO92 (TO226AE)
Characteristic
Symbol
Max
Unit
RqJA
125
C/W
RqJC
50
C/W

Characteristic
Symbol
Min
Max
80
0.1
100
40
25
400
Unit
OFF CHARACTERISTICS
(IC = 10 mA, IB = 0)
V(BR)CEO

(VCB = 80 V, IE = 0)
ICBO
Emitter Cutoff Current (IC = 0, VEB = 5.0 V)
IEBO
Vdc
mAdc
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mA, VCE = 1.0 V)
(IC = 500 mA, VCE = 2.0 V)
hFE
Collector Emitter Saturation Voltage(1) (IC = 1000 mA, IB = 100 mA)
VCE(sat)
0.7
Vdc
Collector Emitter On Voltage(1) (IC = 1000 mA, VCE = 1.0 V)
VBE(on)
1.2
Vdc
fT
50
MHz
Cob
30
pF
CurrentGain Bandwidth Product (IC = 200 mA, VCE = 5.0 V, f = 20 MHz)
Output Capacitance (VCB = 10 V, IE = 0, f = 1.0 MHz)
v 300 ms, Duty Cycle 2.0%.
REV 1
2225
BDB02C
400
TJ = 125C
VCE = 1.0 V
200
25C
55C
100
80
60
40
0.5 0.7
1.0
2.0
3.0
5.0
7.0 10
20
30
50
70
100
200
300
500
1.0
1.0
TJ = 25C
TJ = 25C
0.8
0.8
0.6
IC = 10 mA
50
mA
100 mA
250 mA
V, VOLTAGE (VOLTS)
500 mA
0.4
0.2
0.6
0.4
0.2
0
0.05 0.1
0.2
0.5 1.0 2.0

5.0
10
20
0
0.5 1.0
50
5.0 10 20
50 100 200
500
100
0.8
70
1.2
Cibo
TJ = 25C
50
C, CAPACITANCE (pF)
2.0
1.6
VB for VBE
2.0
30
20
10
2.4
Cobo
7.0
2.8
0.5
1.0
2.0
5.0 10 20
50 100 200
500
2226
5.0
0.1
0.2
0.5 1.0 2.0

5.0 10 20
50 100
300
200
VCE = 2.0 V
TJ = 25C
f T, CURRENTGAIN BANDWIDTH PRODUCT (MHz
BDB02C
100
70
50
DUTY CYCLE 10%

2 k
1.0 ms
1 k
100 s
500
TA = 25C
200
TC = 25C
dc
CURRENT LIMIT
THERMAL LIMIT
100
50
10 s
dc
20
30
2.0 3.0
5.0 7.0 10
20 30 50 70 100
200
10
1.0
BDB02C
2.0
5.0
10
20
45 60 80 100
2227
MOTOROLA
BDC01D
NPN Silicon
COLLECTOR
2
3
BASE
1
1
EMITTER
CASE 2905, STYLE 14

TO92 (TO226AE)
MAXIMUM RATINGS
Rating
Symbol
BDC01D
Unit
VCEO
100
Vdc
VCBO
100
Vdc
VEBO
5.0
Vdc
IC
0.5
Adc

Derate above 25C
PD
1.0
8.0
Watts
mW/C

Derate above 25C
PD
2.5
20
Watts
mW/C
TJ, Tstg
55 to +150

Temperature Range
Symbol
Max
Unit
Characteristic
RqJA
125
C/W
RqJC
50
C/W

Characteristic
Symbol
Min
Max
Unit
V(BR)CEO
100
Vdc

(VCB = 100 V, IE = 0)
ICBO
0.1
mAdc

(IC = 0, VEB = 5.0 V)
IEBO
100
nAdc
OFF CHARACTERISTICS
(IC = 10 mA, IB = 0)
2228
BDC01D
Characteristic
Symbol
Min
Max
40
25
400
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mA, VCE = 1.0 V)
(IC = 500 mA, VCE = 2.0 V)
hFE

(IC = 1000 mA, IB = 100 mA)
VCE(sat)
0.7
Vdc
Collector Emitter On Voltage(1)

(IC = 1000 mA, VCE = 1.0 V)
VBE(on)
1.2
Vdc
fT
50
MHz
Cob
30
pF
(IC = 200 mA, VCE = 5.0 V, f = 20 MHz)
Output Capacitance
(VCB = 10 V, IE = 0, f = 1.0 MHz)
v 300 ms; Duty Cycle 2.0%.
400
TJ = 125C
VCE = 1.0 V
200
25C
55C
100
80
60
40
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
300
500
1.0
1.0
TJ = 25C
TJ = 25C
0.8
0.6
0.8
IC = 10 mA
50
mA
100 mA
250 mA
V, VOLTAGE (VOLTS)
500 mA
0.4
0.2
0.6
0.4
0.2
0
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
0
0.5
1.0
2.0
20
5.0
10
50
100
200
500
2229
80
0.8
TJ = 25C
60
1.2
40
C, CAPACITANCE (pF)
BDC01D
1.6
VB for VBE
2.0
2.4
Cibo
20
10
8.0
6.0
2.8
0.5
1.0
2.0
5.0
20
50
10
100
200
Cobo
4.0
0.1
500
0.2
0.5 1.0 2.0

5.0 10
20
100
300
200
VCE = 2.0 V
TJ = 25C
50
100
70
50
DUTY CYCLE 10%

2k
1.0 ms
1k
100 s
500
TA = 25C
200
100
50
20
30
2.0
3.0
5.0 7.0 10
20 30
50 70 100
2230
200
10
1.0
TC = 25C
1.0 s
dc
dc
CURRENT LIMIT
THERMAL LIMIT
MPSW05
MPSW06
10
20
60 80 100
2.0
5.0
MOTOROLA
RF Transistor
NPN Silicon
BF199
COLLECTOR
1
3
BASE
2
EMITTER
1
2
CASE 2904, STYLE 21

TO92 (TO226AA)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
25
Vdc
VCBO
40
Vdc
VEBO
4.0
Vdc
IC
100
mAdc

Derate above 25C
PD
350
2.8
mW
mW/C

Derate above 25C
PD
1.0
8.0
Watts
mW/C
TJ, Tstg
55 to +150

Temperature Range
Symbol
Max
Unit
Characteristic
RqJA
357
C/W
RqJC
125
C/W

Characteristic
Symbol
Min
Typ
Max
25
40
4.0
100
Unit
OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO

(IC = 100 mAdc, IE = 0)
V(BR)CBO

(IE = 10 mAdc, IC = 0)
V(BR)EBO

(VCB = 20 Vdc, IE = 0)
Vdc
Vdc
Vdc
ICBO
nAdc
2231
BF199
Characteristic
Symbol
Min
Typ
Max
40
85
770
900
400
750
0.25
0.35
2.5
Unit
ON CHARACTERISTICS
DC Current Gain
hFE
VBE(on)
mVdc
(IC = 5.0 mAdc, VCE = 10 Vdc, f = 100 MHz)
Common Emitter Feedback Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Noise Figure
(IC = 4.0 mAdc, VCE = 10 Vdc, RS = 50 , f = 35 MHz)
2232
fT
MHz
Cre
pF
Nf
dB
1000
700
500
10
BF199
VCE = 10 V
TA = 25C
300
C, CAPACITANCE (pF)
BF199
200
100
2
Cib
1
0.7
0.5
0.4
0.3
20
Cob
Cre @ IE = 0
0.2
10
0.2 0.3 0.5 0.7 1

3 5
10
20
100
0.1
0.2
0.5
1
3 5
10
20
100
VCE = 10 V
50
100 MHz
20
200
100
70
50
BF199
mmhos
VCE = 10 V
TA = 25C
10
5
45 MHz
30
20
10.7 MHz
10
0.1
0.2 0.3 0.5 0.7 1

2 3 5 7 10
20
100
b11e 470 kHz < 0.2 mmhos

4
5
6
7
8
Figure 4. b11e
2000
100 MHz
VCE = 10 V
50
100 MHz
1000
10
10.7 MHz
45 MHz
200
100
10.7 MHz
50
2
1
500
45 MHz
20
mhos
mmhos
VCE = 10 V
b21e, at 470 kHz < 0.5 mmhos

4
5
6
7
8
Figure 5. b21e
20
470 kHz
1
3
4
5
Figure 6. b22e (boe)
2233
BF199
10
VCE = 10 V
200
100 MHz
5
45 MHz
10.7 MHz
470 kHz
f = 0.47 to 45 MHz
50
mmhos
mmhos
2
1
20
10
0.5
0.2
0.1
VCE = 10 V
100
4
5
6
3
4
5
Figure 7. g11e (gie)
Figure 8. g21e (Yfe)
200
VCE = 10 V
100 MHz
100
50
45 MHz
mhos
10.7 MHz
470 kHz
20
10
5
3
4
5
Figure 9. g22e (goe)
2234
MOTOROLA
RF Transistor
NPN Silicon
BF224
COLLECTOR
1
3
BASE
2
EMITTER
1
2
CASE 2904, STYLE 21

TO92 (TO226AA)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
30
Vdc
VCBO
45
Vdc
VEBO
4.0
Vdc
IC
50
mAdc

Derate above 25C
PD
350
2.8
mW
mW/C

Derate above 25C
PD
1.0
8.0
Watts
mW/C
TJ, Tstg
55 to +150

Temperature Range
Symbol
Max
Unit
Characteristic
RqJA
357
C/W
RqJC
125
C/W

Characteristic
Symbol
Min
Typ
Max
30
45
4.0
100
100
Unit
OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO

(IC = 100 mAdc, IE = 0)
V(BR)CBO

(IE = 100 mAdc, IC = 0)
V(BR)EBO

(VCB = 20 Vdc, IE = 0)
ICBO

(VEB = 3.0 Vdc, IC = 0)
IEBO
Vdc
Vdc
Vdc
nAdc
nAdc
2235
BF224
Characteristic
Symbol
Min
Typ
Max
30
0.77
0.9
0.15
300
600
850
0.28
2.5
3.5
Unit
ON CHARACTERISTICS
DC Current Gain
hFE
VBE(on)

VCE(sat)
mVdc
Vdc
(VCE = 10 Vdc, IE = 0, f = 1.0 MHz)
Noise Figure
2236
fT
MHz
Cre
pF
Nf
dB
1000
700
500
10
BF224
VCE = 10 V
TA = 25C
300
C, CAPACITANCE (pF)
BF224
200
100
2
Cib
1
0.7
0.5
0.4
0.3
20
Cob
Cre @ IE = 0
0.2
10
0.2 0.3 0.5 0.7 1

3 5
10
20
100
0.1
0.2
0.5
1
3 5
10
20
100
VCE = 10 V
50
100 MHz
20
200
100
70
50
BF224
mmhos
VCE = 10 V
TA = 25C
10
5
45 MHz
30
20
10.7 MHz
10
0.1
0.2 0.3 0.5 0.7 1

2 3 5 7 10
20
100

4
5
6
7
8
Figure 4. b11e
2000
100 MHz
VCE = 10 V
50
100 MHz
1000
10
10.7 MHz
45 MHz
200
100
10.7 MHz
50
2
1
500
45 MHz
20
mhos
mmhos
VCE = 10 V

4
5
6
7
8
Figure 5. b21e
20
470 kHz
1
3
4
5
2237
BF224
10
VCE = 10 V
200
100 MHz
5
45 MHz
10.7 MHz
470 kHz
f = 0.47 to 45 MHz
50
mmhos
mmhos
2
1
20
10
0.5
0.2
0.1
VCE = 10 V
100
4
5
6
3
4
5
200
VCE = 10 V
100 MHz
100
50
45 MHz
mhos
10.7 MHz
470 kHz
20
10
5
3
4
5
2238
MOTOROLA

AM/FM Transistor
BF240
NPN Silicon
COLLECTOR
1
3
BASE
2
EMITTER
CASE 2904, STYLE 21

TO92 (TO226AA)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
40
Vdc
VCBO
40
Vdc
VEBO
4.0
Vdc
IC
25
mAdc

Derate above 25C
PD
350
2.8
mW
mW/C

Derate above 25C
PD
1.0
8.0
Watt
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit
RqJA
357
C/W
RqJC
125
C/W

Temperature Range
Characteristic

Characteristic
Symbol
Min
Typ
Max
Unit

(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
Vdc
V(BR)CBO
40
Vdc
V(BR)EBO
4.0
Vdc
ICBO
100
nAdc
hFE
65
220
VBE(on)
0.65
0.7
0.74
Vdc
fT
600
MHz
Cre
0.28
0.34
pF
OFF CHARACTERISTICS
Collector Cutoff Current (VCB = 20 Vdc, IE = 0)
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc)
BaseEmitter On Voltage (IC = 1.0 mAdc, VCE = 10 Vdc)
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
v 300 ms, Duty Cycle v 2.0%.
REV 1
2239
1000
700
500
10
BF240
VCE = 10 V
TA = 25C
300
C, CAPACITANCE (pF)
BF240
200
100
2
Cib
1
0.7
0.5
0.4
0.3
20
Cob
Cre @ IE = 0
0.2
10
0.2 0.3 0.5 0.7 1

3 5
10
20
100
0.1
0.2
0.5
1
3 5
10
20
100
VCE = 10 V
50
100 MHz
20
200
100
70
50
BF240
mmhos
VCE = 10 V
TA = 25C
10
5
45 MHz
30
20
10.7 MHz
10
0.1
0.2 0.3 0.5 0.7 1

2 3 5 7 10
20
100

4
5
6
7
8
Figure 4. b11e
2000
100 MHz
VCE = 10 V
50
100 MHz
1000
10
10.7 MHz
10.7 MHz
50

4
5
6
7
8
Figure 5. b21e
2240
45 MHz
200
100
2
1
500
45 MHz
20
mhos
mmhos
VCE = 10 V
20
470 kHz
1
3
4
5
BF240
10
VCE = 10 V
200
100 MHz
5
45 MHz
10.7 MHz
470 kHz
f = 0.47 to 45 MHz
50
mmhos
mmhos
2
1
20
10
0.5
0.2
0.1
VCE = 10 V
100
4
5
6
3
4
5
200
VCE = 10 V
100 MHz
100
50
45 MHz
mhos
10.7 MHz
470 kHz
20
10
5
3
4
5
2241
MOTOROLA
High Voltage Transistor

NPN Silicon
BF393
COLLECTOR
3
2
BASE
1
EMITTER
1
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
300
Vdc
VCBO
300
Vdc
VEBO
6.0
Vdc
IC
500
mAdc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
Watts
mW/C
TJ, Tstg
55 to +150

Temperature Range
CASE 2904, STYLE 1

TO92 (TO226AA)
Symbol
Max
Unit
Thermal Resistance, Junction to

Ambient
Characteristic
RqJA
200
C/W
RqJC
83.3
C/W

Characteristic
Symbol
Min
Max
300
300
6.0
0.1
0.1
Unit
OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB =0)
V(BR)CEO

(IC = 100 mAdc, IE = 0)
V(BR)CBO

(IE = 100 mAdc, IC = 0)
V(BR)EBO

(VCB = 200 Vdc, IE = 0)
ICBO

(VEB = 6.0 Vdc, IC = 0)
IEBO
Vdc
Vdc
Vdc
Adc
Adc
(Replaces BF392/D)
2242
BF393
Characteristic
Symbol
Min
Max
25
40
2.0
2.0
50
2.0
Unit
ON CHARACTERISTICS
DC Current Gain
hFE

VCE(sat)

VBE(sat)
Vdc
Vdc

(VCB = 60 Vdc, IE = 0, f = 1.0 MHz)
fT
MHz
Cre
pF
2243
BF393
200
VCE = 10 Vdc
TJ = +125C
100
25C
50
55C
30
20
1.0
2.0
3.0
5.0
7.0
10
20
30
50
100
70
100
C, CAPACITANCE (pF)
50
Ceb
20
10
5.0
Ccb
2.0
1.0
0.2
0.5
1.0 2.0
5.0 10
20
50
100
200
100
70
50
30
20
10
1.0
V, VOLTAGE (VOLTS)
3.0
5.0 7.0 10
20 30
50
70 100
500
TJ = 25C
1.2
1.0
0.8
0.6
0.4
0.2
2.0
3.0
5.0 7.0 10
20 30
2244
2.0
1.4
0
1.0
TJ = 25C
VCE = 20 V
f = 20 MHz
50
70 100
200
100
10 s
100 s
TA = 25C
1.0 ms
TC = 25C
50
100 ms
20
CURRENT LIMIT
THERMAL LIMIT
10
5.0
2.0
1.0
CURVES APPLY
BELOW RATED VCEO
0.5
0.5
1.0
2.0
5.0
10
20
MPSA43
MPSA42
50
100
200
500
Figure 5. Maximum Forward Bias

Safe Operating Area
MOTOROLA

NPN Silicon
BF420
BF422
COLLECTOR
2
3
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
BF420
BF422
Unit
VCEO
300
250
Vdc
VCBO
300
250
Vdc
VEBO
5.0
Vdc
IC
500
mAdc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
Watts
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit

Temperature Range
CASE 2904, STYLE 14

TO92 (TO226AA)
Characteristic
RqJA
200
C/W
RqJC
83.3
C/W

Characteristic
Symbol
Min
Max
300
250
300
250
5.0
5.0
0.01
100
Unit
OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0)
(IC = 100 mAdc, IE = 0)
(IE = 100 mAdc, IC = 0)
(VCB = 200 Vdc, IE = 0)
(VEB = 5.0 Vdc, IC = 0)
V(BR)CEO
BF420
BF422
Vdc
V(BR)CBO
BF420
BF422
Vdc
V(BR)EBO
BF420
BF422
Vdc
Adc
ICBO
BF420
BF422
IEBO
BF420
BF422
nAdc
2245
BF420 BF422
Characteristic
Symbol
Min
Max
50
50
0.5
2.0
60
1.6
Unit
ON CHARACTERISTICS
DC Current Gain
hFE
BF420
BF422

VCE(sat)

VBE(sat)
Vdc
Vdc

(VCB = 30 Vdc, IE = 0, f = 1.0 MHz)
2246
fT
MHz
Cre
pF
BF420 BF422
200
VCE = 10 Vdc
TJ = +125C
100
25C
50
55C
30
20
1.0
2.0
3.0
5.0
7.0
10
20
30
50
100
70
100
C, CAPACITANCE (pF)
50
Ceb
20
10
5.0
Ccb
2.0
1.0
0.2
0.5
1.0 2.0
5.0 10
20
50
100
200
100
70
50
30
20
10
1.0
3.0
5.0 7.0 10
20 30
50
70 100
500
TJ = 25C
1.2
V, VOLTAGE (VOLTS)
2.0
1.4
1.0
0.8
0.6
0.4
0.2
0
1.0
TJ = 25C
VCE = 20 V
f = 20 MHz
2.0
3.0
5.0 7.0 10
20 30
50
70 100
200
100
10 s
100 s
TA = 25C
1.0 ms
TC = 25C
50
100 ms
20
CURRENT LIMIT
THERMAL LIMIT
10
5.0
2.0
1.0
CURVES APPLY
BELOW RATED VCEO
0.5
0.5
1.0
2.0
5.0
10
20
MPSA43
MPSA42
50
100
200
500

Safe Operating Area
2247
MOTOROLA
BF421
BF423
PNP Silicon
COLLECTOR
2
3
BASE
1
EMITTER
1
2
MAXIMUM RATINGS
Rating
Symbol
BF421
BF423
Unit
VCEO
300
250
Vdc
VCBO
300
250
Vdc
VEBO
5.0
Vdc
IC
500
mAdc

@ TA = 25C
Derate above 25C
PD
625
5.0
mW
mW/C

@ TC = 25C
Derate above 25C
PD
1.5
12
Watts
mW/C
TJ, Tstg
55 to +150

Temperature Range
CASE 2904, STYLE 14

TO92 (TO226AA)
Characteristic
Symbol
Max
Unit
RqJA
200
C/W
RqJC
83.3
C/W

Symbol
Characteristic
Min
Max
300
250
300
250
5.0
5.0
0.01
100
Unit
OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0)
(IC = 100 mAdc, IE = 0)
(IE = 100 mAdc, IC = 0)
(VCB = 200 Vdc, IE = 0)
(VEB = 5.0 Vdc, IC = 0)
2248
V(BR)CEO
BF421
BF423
Vdc
V(BR)CBO
BF421
BF423
Vdc
V(BR)EBO
BF421
BF423
Vdc
mAdc
ICBO
BF421
BF423
IEBO
BF421
BF423
nAdc
BF421 BF423
Characteristic
Symbol
Min
Max
50
50
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 25 mA, VCE = 20 Vdc)
hFE
BF421
BF423

VCE(sat)
0.5
Vdc

(IC = 20 mA, IB = 2.0 mA)
VBE(sat)
2.0
Vdc
fT
60
MHz
Cre
2.8
pF

(VCB = 30 Vdc, IE = 0, f = 1.0 MHz)
2249
BF421 BF423
150
TJ = +125C
VCE = 10 Vdc
100
+25C
70
55C
50
30
20
15
1.0
2.0
3.0
5.0
7.0
10
20
30
50
80
100
100
50
C, CAPACITANCE (pF)
Cib
20
10
5.0
2.0
Ccb
1.0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100200 500 1000
100
TJ = 25C
VCE = 20 Vdc
80
60
40
30
20
0
1.0
2.0
5.0
10
20
50
100
1.0
500
100 s
1.0 ms
V, VOLTAGE (VOLTS)
0.8
VBE @ VCE = 10 V
0.6
0.4
0.2
0
1.0
VCE(sat) @ IC/IB = 10 mA
2.0
5.0
10
20
2250
50
100
1.0 s
200
100
BF423
50
20
1.5 WATT THERMAL

LIMITATION @ TC = 25C
625 mW THERMAL
LIMITATION @ TA = 25C
10
5.0
3.0
BF421
BONDING WIRE LIMITATION

SECOND BREAKDOWN
LIMITATION TJ = 150C
100
200 300
5.0
10
20 30
50
MOTOROLA
BF493S
PNP Silicon
COLLECTOR
3
2
BASE
1
EMITTER
1
2
CASE 2904, STYLE 1

TO92 (TO226AA)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
350
Vdc
VCBO
350
Vdc
VEBO
6.0
Vdc
IC
500
mAdc

Derate above 25C
PD
625
5.0
Watts
mW/C

Derate above 25C
PD
1.5
12
Watts
mW/C
TJ, Tstg
55 to +150

Temperature Range
Symbol
Max
Unit
Characteristic
RqJA
200
C/W
RqJC
83.3
C/W

Characteristic
Symbol
Min
Max
Unit

(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
350
Vdc

(IC = 100 mAdc, IE = 0)
V(BR)CBO
350
Vdc

(IE = 100 mAdc, IC = 0)
V(BR)EBO
6.0
Vdc

(VCE = 250 Vdc)
ICES
10
nAdc

(VEB = 6.0 Vdc, IC = 0)
IEBO
0.1
mAdc

(VCB = 250 Vdc, IE = 0, TA = 25C)
(VCB = 250 Vdc, IE = 0, TA = 100C)
ICBO
0.005
1.0
OFF CHARACTERISTICS
mAdc
2251
BF493S
Characteristic
Symbol
Min
Max
25
40
Unit
ON CHARACTERISTICS
DC Current Gain
hFE

VCE(sat)
2.0
Vdc

(IC = 20 mA, IB = 2.0 mA)
VBE(sat)
2.0
Vdc
fT
50
MHz
Cre
1.6
pF
CommonEmitter Feedback Capacitance
(VCB = 100 Vdc, IE = 0, f = 1.0 MHz)
2252
BF493S
150
TJ = +125C
VCE = 10 Vdc
100
+25C
70
55C
50
30
20
15
1.0
2.0
3.0
5.0
7.0
10
20
30
50
80
100
100
50
C, CAPACITANCE (pF)
Cib
20
10
5.0
2.0
Ccb
1.0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100200 500 1000
100
TJ = 25C
VCE = 20 Vdc
80
60
40
30
20
0
1.0
2.0
5.0
10
20
50
100
1.0
500
100 s
1.0 ms
V, VOLTAGE (VOLTS)
0.8
VBE @ VCE = 10 V
0.6
0.4
0.2
0
1.0
2.0
5.0
10
20
50
100
1.0 s
200
100
MPSA93
50
20
1.5 WATT THERMAL

625 mW THERMAL
10
5.0
3.0
MPSA92

SECOND BREAKDOWN
100
200 300
5.0
10
20 30
50
2253
MOTOROLA
NPN Silicon Transistor
BF720T1
COLLECTOR 2,4
BASE
1
NPN SILICON
TRANSISTOR
SURFACE MOUNT
EMITTER 3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
300
Vdc
VCBO
300
Vdc
VCER
300
Vdc
VEBO
5.0
Vdc
Collector Current
IC
100
mAdc
Total Power Dissipation up to TA = 25C
PD
1.5
Watts
Tstg
65 to +150
TJ
150
Symbol
Max
Unit
RJA
83.3
C/W
2
3

SOT223 (TO-261AA)
DEVICE MARKING
DC
Characteristic
Thermal Resistance
from Junction-to-Ambient(1)

Symbol
Min
Max
Unit

(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
300
Vdc

(IC = 100 Adc, IE = 0)
V(BR)CBO
300
Vdc

(IC = 100 Adc, RBE = 2.7 k)
V(BR)CER
300
Vdc

(IE = 10 Adc, IC = 0)
V(BR)EBO
5.0
Vdc

(VCB = 200 Vdc, IE = 0)
ICBO
10
nAdc
CollectorEmitter Cutoff Current

(VCE = 250 Vdc, RBE = 2.7 k)
(VCE = 200 Vdc, RBE = 2.7 k, TJ = 150C)
ICER
50
10
nAdc
Adc
Characteristics
OFF CHARACTERISTICS
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 in2.
REV 2
2254
BF720T1
Characteristic
Symbol
Min
Max
Unit
hFE
50
VCE(sat)
0.6
Vdc
fT
60
MHz
Cre
1.6
pF
ON CHARACTERISTICS
DC Current Gain
Feedback Capacitance
(VCE = 30 Vdc, IC = 0, f = 1.0 MHz)
2255
MOTOROLA
BF721T1
PNP Silicon Transistor
COLLECTOR 2,4
PNP SILICON
TRANSISTOR
SURFACE MOUNT
BASE
1
EMITTER 3
MAXIMUM RATINGS
Symbol
Value
Unit
Rating
VCEO
300
Vdc
VCBO
300
Vdc
VCER
300
Vdc
VEBO
5.0
Vdc
Collector Current
IC
100
mAdc
Total Power Dissipation up to

TA = 25C(1)
PD
1.5
Watts
Tstg
65 to +150
TJ
150
Symbol
Max
Unit
RJA
83.3
C/W
2
3

SOT223 (TO-261AA)
DEVICE MARKING
DF
Characteristic
Thermal Resistance from Junction to
Ambient(1)

Characteristic
Symbol
Min
Max
Unit

(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
300
Vdc

(IC = 100 Adc, IE = 0)
V(BR)CBO
300
Vdc

(IC = 100 Adc, RBE = 2.7 k)
V(BR)CER
300
Vdc

(IE = 10 Adc, IC = 0)
V(BR)EBO
5.0
Vdc

(VCB = 200 Vdc, IE = 0)
ICBO
10
nAdc

(VCE = 250 Vdc, RBE = 2.7 k)
(VCE = 200 Vdc, RBE = 2.7 k, TJ = 150C)
ICER
50
10
nAdc
Adc
OFF CHARACTERISTICS
REV 3
2256
BF721T1
Characteristic
Symbol
Min
Max
Unit
hFE
50
VCE(sat)
0.8
Vdc
fT
60
MHz
Cre
1.6
pF
ON CHARACTERISTICS
DC Current Gain
(VCE = 25 mAdc, VCE = 20 Vdc)
(VCE = 10 Vdc, IC = 10 mAdc, f = 35 MHz)
(VCE = 30 Vdc, IC = 0, f = 1.0 MHz)
2257
MOTOROLA
BF844
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
400
Vdc
VCBO
450
Vdc
VEBO
6.0
Vdc
IC
300
mAdc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
Watt
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit

Temperature Range
CASE 2904, STYLE 1

TO92 (TO226AA)
Characteristic
RqJA
200
C/W
RqJC
83.3
C/W

Characteristic
Symbol
Min
Max
Unit

(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
400
Vdc

(IC = 100 Adc, VBE = 0)
V(BR)CES
450
Vdc

(IC = 100 mAdc, IE = 0)
V(BR)CBO
450
Vdc

(IE = 10 mAdc, IC = 0)
V(BR)EBO
6.0
Vdc

(VCB = 400 Vdc, IE = 0)
ICBO
0.1
Adc

(VCE = 400 Vdc, VBE = 0)
ICES
500
nAdc

(VEB = 4.0 Vdc, IC = 0)
IEBO
0.1
Adc
OFF CHARACTERISTICS
2258
BF844
Characteristic
Symbol
Min
Max
40
50
45
20
200
0.4
0.5
0.75
Unit
ON CHARACTERISTICS
DC Current Gain(1)
hFE

VCE(sat)

VBE(sat)
0.75
High Frequency Current Gain

|hfe|
1.0
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
Cob
6.0
pF
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cib
110
pF
TurnOn Time
(VCC = 150 Vdc, VBE(off) = 4.0 V, IC = 30 mAdc, IB1 = 3.0 mAdc)
ton
0.6
TurnOff Time
(VCC = 150 Vdc, IC = 30 mAdc, IB1 = IB2 = 3.0 mAdc)
toff
10
Vdc
Vdc
2259
160
TA = 125C
140
120
VCE = 10 V
100
25C
80
60
40
55C
20
1.0
100
5.0
10
20
50
2.0
BF844
200 300
0.5
0.4
IC = 1.0 mA
IC = 10 mA
0.3
TA = 25C
0.2
0.1
0
10
30
100
1.0 ms
0.8
V, VOLTAGE (VOLTS)
10 k
50 k
1000
TA = 25C
0.6
0.4
0.2
300
200
100
30
3.0
10
1.0
0.3
100
10
1.0
1.0
300
CURRENT LIMIT
THERMAL LIMIT
VALID FOR DUTY CYCLE 10%
2.0
20
50
10
100
5.0
VCE, COLLECTOR VOLTAGE (VOLTS)
200
500
10
Cib
50
20
Cob
5.0
TA = 25C
f = 1.0 MHz
2.0
1.0
0.3 0.5
1.0 s
100
10
TC = 25C
TA = 25C
100 s
20
2.0
0
0.1
C, CAPACITANCE (pF)
300
1.0 k 3.0 k
1.0
1.0
3.0
10
30
2260
IC = 50 mA
100
300
3.0
VCE = 10 V
f = 10 MHz
TA = 25C
2.0
1.5
1.0
0.1
0.2 0.3
1.0
3.0
10
30
100
BF844
10
Vin
+9.7 V
t, TIME ( s)
5.0
PW = 50 s
DUTY CYCLE = 2.0%
2.0
0
1.0
4.0 V
0.5
0.2
0.1
1.0
VCC = 150 V
IC/IB = 10
TA = 25C
VBE(off) = 4.0 Vdc
VCC
tr
RL
td
3.0
10
30
50
Vout
100
Vin
RB
CS 4.0 pF*
Figure 7. TurnOn Switching Times and Test Circuit
10
Vin
5.0
+10.7 V
t, TIME ( s)
ts
PW = 50 s
DUTY CYCLE = 2.0%
2.0
1.0
0.5
0.2
tf
VCC = 150 V
IC/IB = 10
TA = 25C
11.4 V
VCC
RL
0.1
1.0
3.0
10
30
50
100
Vout
Vin
RB
CS 4.0 pF*
Figure 8. TurnOff Switching Times and Test Circuit

* Total Shunt Capacitance or Test Jig and Connectors.
2261
MOTOROLA
VHF Transistor
NPN Silicon
BF959
COLLECTOR
1
3
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
20
Vdc
VCBO
30
Vdc
VEBO
3.0
Vdc
IC
100
mAdc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
Watt
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit

Temperature Range
1
2
CASE 2904, STYLE 21

TO92 (TO226AA)
Characteristic
RqJA
200
C/W
RqJC
83.3
C/W

Symbol
Min
Typ
Max
Unit
Collector Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0)
V(BR)CEO
20
Vdc
Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0)
V(BR)CBO
30
Vdc
Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
V(BR)EBO
3.0
Vdc
ICBO
100
nAdc
35
40
Characteristic
OFF CHARACTERISTICS
ON CHARACTERISTICS
DC Current Gain
hFE
Collector Emitter Saturation Voltage (IC = 30 mAdc, IB = 2.0 mAdc)
VCE(sat)
1.0
Vdc
Base Emitter Saturation Voltage (IC = 30 mAdc, IB = 2.0 mAdc)
VBE(sat)
1.0
Vdc
700
600
Cre
0.65
pF
Nf
3.0
dB

(VCB = 10 Vdc, Pf = 0, f = 10 MHz)
Noise Figure (IC = 4.0 mA, VCE = 10 V, RS = 50 , f = 200 MHz)
2262
fT
MHz
BF959
500
1000
200
200
100
mV
500
100
50
40
30
50
40
30
20
20
4 5
10
20
30
50
10
100
4 5
10
20
Figure 1. hFE at 10 V
Figure 2. VCE(sat) at IC/IB = 10
2.0
1.8
1.8
1.6
1.6
1.4
1.4
1.2
1
0.8
2V
0.6
0.4
C, CAPACITANCE (pF)
f T, CURRENTGAIN BANDWIDTH PRODUCT (GHz)
10
10 V
5V
30
50
50
100
1.2
Cib
1
0.8
Cob
0.6
Cre
0.4
0.2
4 5
10
20
30 40 50
100
4 5
10
20
30
10
500
b22e
300
g11e
5
4
3
200
g22e
VCE = 10 V
VCE = 10 V
Y22e ( s)
Y11e (ms)
2
b11e
1
0.5
0.4
0.3
50
40
30
20
0.2
0.1
100
10
1
4 5
10
20
30
50
100
4 5
10
20
30
Figure 5. Input Impedance at 30 MHz
Figure 6. Output Impedance at 30 MHz
50
2263
MOTOROLA
BSP16T1
SOT-223 Package
PNP Silicon
COLLECTOR 2,4
SOT223 PACKAGE
PNP SILICON
HIGH VOLTAGE
TRANSISTOR
SURFACE MOUNT
BASE
1
EMITTER 3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
300
Vdc
VCBO
350
Vdc
VEBO
6.0
Vdc
Collector Current
IC
1000
mAdc
Base Current
IB
500
mAdc
Total Device Dissipation, TA = 25C (1)
PD
1.5
Watts
Tstg
65 to +150
TJ
150
Symbol
Max
Unit
RqJA
83.3
C/W
2
3

TO-261AA
DEVICE MARKING
BT2
Characteristic

Characteristic
Symbol
Min
Max
300
300
50
1.0
20
Unit
OFF CHARACTERISTICS
(IC = 50 mAdc, IB = 0, L = 25 mH)
V(BR)CEO

(IC = 100 mAdc, IE = 0)
V(BR)CBO

(VCE = 250 Vdc, IB = 0)
ICES
CollectorBase Cutoff Current

(VCB = 280 Vdc, IE = 0)
ICBO
EmitterBase Cutoff Current

(VEB = 6.0 Vdc, IC = 0)
IEBO
Vdc
Vdc
Adc
Adc
Adc
REV 2
2264
BSP16T1
ELECTRICAL CHARACTERISTICS (continued) (TA = 25C unless otherwise noted)
Characteristics
Symbol
Min
Max
30
120
2.0
15
15
Unit
ON CHARACTERISTICS
DC Current Gain
(VCE = 10 Vdc, IC = 50 mAdc)
hFE

VCE(sat)
Vdc
(VCE = 10 Vdc, IC = 10 mAdc, f = 30 MHz)
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
fT
MHz
Cobo
pF
2265
MOTOROLA
NPN Silicon
BSP19AT1
This family of NPN Silicon Epitaxial transistors is designed for use as a general
purpose amplifier and in switching applications. The device is housed in the SOT-223
package which is designed for medium power surface mount applications.
SOT223 PACKAGE
NPN SILICON
HIGH VOLTAGE
TRANSISTOR
SURFACE MOUNT
High Voltage: V(BR)CEO of 250 and 350 Volts.

The SOT-223 package can be soldered using wave or reflow.
conduction, and allows visual inspection of soldered joints. The formed
leads absorb thermal stress during soldering, eliminating the possibility of
damage to the die
T1 Configuration 7 inch/1000 unit reel
T3 Configuration 13 inch/4000 unit reel
PNP Complement is BSP16T1
COLLECTOR 2,4
BASE
1
2
3

TO-261AA
EMITTER 3

Symbol
Value
Unit
Collector-Emitter Voltage (Open Base)
VCEO
350
Vdc
Collector-Base Voltage (Open Emitter)
VCBO
400
Vdc
Emitter-Base Voltage (Open Collector)
VEBO
5.0
Vdc
Collector Current (DC)
IC
1000
mAdc

Derate above 25C
PD
0.8
6.4
Watts
mW/C
Tstg
65 to 150
TJ
150
Rating
DEVICE MARKING
SP19A
Symbol
Max
Unit
Thermal Resistance from Junction-to-Ambient
Characteristic
RJA
156
C/W

Time in Solder Bath
TL
260
10
C
Sec
1. Device mounted on a FR-4 glass epoxy printed circuit board using minimum recommended footprint.
REV 2
2266
BSP19AT1
Characteristics
Symbol
Min
Max
350
20
10
40
70
0.5
1.3
Unit
OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO

(VCB = 400 Vdc, IE = 0)
ICBO

(VEB = 5.0 Vdc, IC = 0)
IEBO
Vdc
nAdc
Adc
DC Current Gain
(IC = 10 mAdc, VCE = 10 Vdc, f = 5.0 MHz)
hFE
fT

VCE(sat)
Base-Emitter Saturation Voltage

VBE(sat)
MHz
Vdc
Vdc
2. Pulse Test: Pulse Width 300 s, Duty Cycle = 2.0%
2267
MOTOROLA
NPN Small-Signal
Darlington Transistor
BSP52T1
This NPN small signal darlington transistor is designed for use in switching
applications, such as print hammer, relay, solenoid and lamp drivers. The device is
housed in the SOT-223 package, which is designed for medium power surface mount
applications.
MEDIUM POWER
NPN SILICON
DARLINGTON
TRANSISTOR
SURFACE MOUNT
The SOT-223 Package can be soldered using wave or reflow. The formed
damage to the die
Use BSP52T1 to order the 7 inch/1000 unit reel
Use BSP52T3 to order the 13 inch/4000 unit reel
PNP Complement is BSP62T1
COLLECTOR 2,4
BASE
1
2
3

TO-261AA
EMITTER 3

Rating
Symbol
Value
Unit
VCES
80
Vdc
VCBO
90
Vdc
VEBO
5.0
Vdc
Collector Current
IC
500
mAdc

Derate above 25C
PD
0.8
6.4
Watts
mW/C
TJ, Tstg
65 to 150
Symbol
Max
Unit
RJA
156
C/W
TL
260
10
C
Sec
DEVICE MARKING
AS3
Characteristic
Time in Solder Bath
1. Device mounted on a FR-4 glass epoxy printed circuit board using minimum recommended footprint.
REV 1
2268
BSP52T1
Characteristics
Symbol
Min
Max
90
5.0
10
10
1000
2000
1.3
1.9
Unit
OFF CHARACTERISTICS
(IC = 100 Adc, IE = 0)
V(BR)CBO

(IE = 10 Adc, IC = 0)
V(BR)EBO
Collector-Emitter Cutoff Current

(VCE = 80 Vdc, VBE = 0)
ICES

(VEB = 4.0 Vdc, IC = 0)
IEBO
Vdc
Vdc
Adc
Adc
DC Current Gain
hFE

VCE(sat)
VBE(on)
Vdc
Vdc
2269
MOTOROLA
BSP62T1
PNP Small-Signal
This PNP small signal darlington transistor is designed for use in switching
applications, such as print hammer, relay, solenoid and lamp drivers. The device is
housed in the SOT-223 package which is designed for medium power surface mount
applications.
The SOT-223 Package can be soldered using wave or reflow. The formed
damage to the die
Use BSP62T1 to order the 7 inch/1000 unit reel.
Use BSP62T3 to order the 13 inch/4000 unit reel.
NPN Complement is BSP52T1
MEDIUM POWER
PNP SILICON
DARLINGTON
TRANSISTOR
SURFACE MOUNT
COLLECTOR 2,4
1
BASE
1
2
3

TO-261AA
EMITTER 3

Rating
Symbol
Value
Unit
VCES
80
Vdc
VCBO
90
Vdc
VEBO
5.0
Vdc
Collector Current
IC
500
mAdc

Derate above 25C
PD
1.5
12
Watts
mW/C
TJ, Tstg
65 to 150
Symbol
Max
Unit
RJA
83.3
C/W
TL
260
10
C
Sec
DEVICE MARKING
BS3
Characteristic
Time in Solder Bath
1. Device mounted on a FR4 glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.0625 in.; mounting pad for the collector lead = 0.93 sq. in.
REV 2
2270
BSP62T1
Characteristics
Symbol
Min
Max
90
5.0
10
10
1000
2000
1.3
1.9
Unit
OFF CHARACTERISTICS
(IC = 100 Adc, IE = 0)
V(BR)CBO

(IE = 10 Adc, IC = 0)
V(BR)EBO

(VCE = 80 Vdc, VBE = 0)
ICBO

(VEB = 4.0 Vdc, IC = 0)
IEBO
Vdc
Vdc
Adc
Adc
DC Current Gain
hFE

VCE(sat)
VBE(on)
Vdc
Vdc
2271
BSP62T1
hFE, DC CURRENT GAIN (X1.0 K)
200
100
TA = 125C
70
50
10 V
30
25C
VCE = 2.0 V
20
5.0 V
10
7.0
5.0
55C
3.0
2.0
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
300
4.0
3.0
2.0
VCE = 5.0 V
f = 100 MHz
TA = 25C
2.0
1.0
0.4
1.2
0.8

IC/IB = 100
0.4
0.2
2.0
5.0
10
20
50
100
200
500
0
0.3 0.5
1K
1.0
2.0 3.0 5.0
10
20 30
50
0.1
1.0
TA = 25C
1.6
V, VOLTAGE (VOLTS)
|h FE |, HIGH FREQUENCY CURRENT GAIN
10
100
200 300
2.0
TA = 25C
1.8
1.6
IC = 10 mA
50 mA 100 mA
175 mA
300 mA
1.4
1.2
1.0
0.8
0.6
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1K 2K 5K 10K
2272
MOTOROLA
BSS63LT1
COLLECTOR
3
PNP Silicon
1
BASE
2
EMITTER
MAXIMUM RATINGS
3
1
Rating
Symbol
Value
Unit
VCEO
100
Vdc

RBE = 10 k
VCER

SOT 23 (TO 236AB)
Vdc
110
IC
100
mAdc
Characteristic
Symbol
Max
Unit

TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
RqJA
556
C/W
PD
300
mW
2.4
mW/C
RqJA
417
C/W
TJ, Tstg
55 to +150

Derate above 25C
DEVICE MARKING
BSS63LT1 = T1

Characteristic
Symbol
Min
Typ
Max
100
110
110
6.0
100
10
200
Unit
OFF CHARACTERISTICS
(IC = 100 Adc)
V(BR)CEO

(IC = 10 Adc, IE = 0, RBE = 10 k)
V(BR)CER

(IE = 10 mAdc, IE = 0)
V(BR)CBO

(IE = 10 mAdc)
V(BR)EBO

(VCB = 90 Vdc, IE = 0)
ICBO

(VCE = 110 Vdc, RBE = 10 k)
ICER

(VEB = 6.0 Vdc, IC = 0)
IEBO
Vdc
Vdc
Vdc
Vdc
nAdc
Adc
nAdc
0.062 in.
0.024 in. 99.5% alumina.
1. FR 5 = 1.0
0.75
2. Alumina = 0.4
0.3
REV 1
2273
BSS63LT1
Characteristic
Symbol
Min
Typ
Max
30
30
250
900
50
95
20
Unit
ON CHARACTERISTICS
DC Current Gain
hFE

VCE(sat)

VBE(sat)
mVdc
mVdc

fT
Case Capacitance
(IE = IC = 0, VCB = 10 Vdc, f = 1.0 MHz)
CC
2274
MHz
pF
MOTOROLA
Driver Transistor
BSS64LT1
COLLECTOR
3
NPN Silicon
1
BASE
2
EMITTER
3
1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
80
Vdc
VCBO
120
Vdc
VEBO
5.0
Vdc
IC
100
mAdc
Symbol
Max
Unit

TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
RqJA
556
C/W
PD
300
mW
2.4
mW/C
RqJA
417
C/W
TJ, Tstg
55 to +150

SOT 23 (TO 236AB)
Characteristic

Derate above 25C
DEVICE MARKING
BSS64LT1 = AM

Characteristic
Symbol
Min
Max
80
120
5.0
0.1
500
200
Unit
OFF CHARACTERISTICS
(IC = 4.0 mAdc)
V(BR)CEO

(IC = 100 mAdc)
V(BR)CBO

(IE = 100 mAdc)
V(BR)EBO

(VCE = 90 Vdc)
(TA = 150C)
ICBO

(VEB = 4.0 Vdc)
IEBO
Vdc
Vdc
Vdc
Adc
nAdc
0.062 in.
0.024 in. 99.5% alumina.
1. FR 5 = 1.0
0.75
2. Alumina = 0.4
0.3
REV 1
2275
BSS64LT1
Characteristic
Symbol
Min
Max
20
0.15
0.2
60
20
Unit
ON CHARACTERISTICS
DC Current Gain
(VCE = 1.0 Vdc, IC = 10 mAdc)
HFE

(IC = 4.0 mAdc, IB = 400 Adc)
VCE(sat)
Forward Base Emitter Voltage
VBE(sat)
Vdc

Output Capacitance
(VCB = 10 Vdc, f = 1.0 MHz)
2276
fT
MHz
Cob
pF
MOTOROLA
Switching Transistor
BSV52LT1
COLLECTOR
3
NPN Silicon
1
BASE
2
EMITTER
3
1
2

SOT 23 (TO 236AB)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
12
Vdc
VCBO
20
Vdc
IC
100
mAdc
Symbol
Max
Unit

TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
RqJA
556
C/W
PD
300
mW
2.4
mW/C
RqJA
417
C/W
TJ, Tstg
55 to +150
Characteristic

Derate above 25C
DEVICE MARKING
BSV52LT1 = B2

Characteristic
Symbol
Min
Max
12
100
5.0
Unit
OFF CHARACTERISTICS
(IC = 1.0 mAdc)
V(BR)CEO

(VCB = 10 Vdc, IE = 0)
(VCB = 10 Vdc, IE = 0, TA = 125C)
ICBO
0.062 in.
0.024 in. 99.5% alumina.
Vdc
nAdc
Adc
1. FR 5 = 1.0
0.75
2. Alumina = 0.4
0.3
2277
BSV52LT1
Characteristic
Symbol
Min
Max
25
40
25
120
300
250
400
700
850
1200
400
4.0
4.5
13
12
18
Unit
ON CHARACTERISTICS
DC Current Gain
HFE

(IC = 10 mAdc, IB = 300 Adc)
VCE(sat)

VBE(sat)
mVdc
mVdc

fT
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Cobo
Input Capacitance
(VEB = 1.0 Vdc, IC = 0, f = 1.0 MHz)
Cibo
MHz
pF
pF
Storage Time
(IC = IB1 = IB2 = 10 mAdc)
ts
TurnOn Time
(VBE = 1.5 Vdc, IC = 10 mAdc, IB = 3.0 mAdc)
ton
TurnOff Time
toff
2278
ns
ns
ns
MOTOROLA
DTA114YE
Preliminary Data Sheet
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor with

Monolithic Bias Resistor Network
3
2
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic
bias network consisting of two resistors; a series base resistor and a baseemitter
resistor. These digital transistors are designed to replace a single device and its
external resistor bias network. The BRT eliminates these individual components by
i n t e g r a t i n g t h e m i n t o a s i n g l e d e v i c e . T h e D TA 11 4 Y E i s h o u s e d i n t h e
SOT416/SC90 package which is ideal for lowpower surface mount applications
where board space is at a premium.
CASE 46301, STYLE 1

SOT416/SC90
Simplifies Circuit Design

Reduces Board Space
OUT (3)
R1
IN (1)
Reduces Component Count
R2
Available in 8 mm, 7 inch/3000 Unit Tape and Reel.
GND (2)
R1 = 10 k
R2 = 47 k
MAXIMUM RATINGS (TA = 25C unless otherwise noted)

Rating
Symbol
Value
Unit
Output Voltage
VO
50
Vdc
Input Voltage
VI
40
Vdc
Output Current
IO
100
mAdc
PD
*125
mW
TJ, Tstg
55 to +150
TJ
150
DEVICE MARKING
DTA114YE = 59
Power Dissipation @ TA = 25C(1)

Symbol
Min
Typ
Max
Unit
Input Off Voltage (VO = 5.0 Vdc, IO = 100 Adc)
VI(off)
0.3
Vdc
Input On Voltage (VO = 0.3 Vdc, IO = 1.0 mAdc)
VI(on)
1.4
Vdc
Output On Voltage (IO = 5.0 mAdc, II = 0.25 mAdc)
VO(on)
0.3
Vdc
II
0.88
mAdc
IO(off)
500
nAdc
Characteristic
Input Current (VI = 5.0 Vdc)

Output Cutoff Current (VO = 50 Vdc)
DC Current Gain (VO = 5.0 Vdc, IO = 5.0 mAdc)
GI
68
Input Resistance
R1
7.0
10
13
kOhms
Resistance Ratio
R1/R2
0.17
0.21
0.25
REV 1
2279
DTA114YE
1
VO(on), OUTPUT VOLTAGE (V)
IO/II = 10
G I , DC CURRENT GAIN (NORMALIZED)
180
TA = 25C
25C
0.1
75C
0.01
0.001
20
40
60
IO, OUTPUT CURRENT (mA)
25C
140
25C
120
100
80
60
40
20
0
80
Figure 1. VO(on) versus IO
8 10 15 20 40 50 60 70
80 90 100
Figure 2. GI, DC Current Gain
10
100
TA = 75C
VO = 0.2 V
25C
V I , INPUT VOLTAGE (VOLTS)
TA = 75C
VO(on) = 10 V
160
25C
10
25C
TA = 25C
75C
VO = 5 V
1
4
6
VI, INPUT VOLTAGE (V)
0.1
10
Figure 3. Output Current versus Input Voltage
10
20
30
50
Figure 4. Input Voltage versus Output Current
+12 V
4.5
f = 1 MHz
lE = 0 V
TA = 25C
4
Cob , CAPACITANCE (pF)
40
3.5
Typical Application
for PNP BRTs
3
2.5
2
1.5
1
LOAD
0.5
0
6 8 10 15 20 25 30 35 40
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 5. Output Capacitance
2280
45
50
Figure 6. Inexpensive, Unregulated Current Source
MOTOROLA
DTA143EE

3
2
i n t e g r a t i n g t h e m i n t o a s i n g l e d e v i c e . T h e D TA 1 4 3 E E i s h o u s e d i n t h e
SOT416/SC90 package which is ideal for lowpower surface mount applications
CASE 46301, STYLE 1

SOT416/SC90

Reduces Board Space
OUT (3)
R1
IN (1)
R2
GND (2)
R1 = 4.7 k
R2 = 4.7 k

Rating
Symbol
Value
Unit
Output Voltage
VO
50
Vdc
Input Voltage
VI
30
Vdc
Output Current
IO
100
mAdc
PD
*125
mW
TJ, Tstg
55 to +150
TJ
150
DEVICE MARKING
DTA143EE = 43

Symbol
Min
Typ
Max
Unit
VI(off)
0.5
Vdc
Input On Voltage (VO = 0.3 Vdc, IO = 20 mAdc)
VI(on)
3.0
Vdc
Output On Voltage (IO = 10 mAdc, II = 0.5 mAdc)
VO(on)
0.3
Vdc
II
1.8
mAdc
IO(off)
500
nAdc
Characteristic

DC Current Gain (VO = 5.0 Vdc, IO = 10 mAdc)
GI
20
Input Resistance
R1
3.3
4.7
6.1
kOhms
Resistance Ratio
R1/R2
0.8
1.0
1.2
* Typical electrical characteristic curves are not available at this time.
2281
MOTOROLA
DTC114TE
NPN Silicon Surface Mount Transistor with

The BRT (Bias Resistor Transistor) contains a single transistor with a

monolithic bias network consisting of two resistors; a series base resistor and a
baseemitter resistor. These digital transistors are designed to replace a single
device and its external resistor bias network. The BRT eliminates these
individual components by integrating them into a single device. The DTC114TE
is housed in the SOT416/SC90 package which is ideal for low power surface
mount applications where board space is at a premium.
2
1
CASE 46301, STYLE 1

SOT416/SC90

Reduces Board Space
OUT (3)
R1
IN (1)
GND (2)
R1 = 10 k

Rating
Symbol
Value
Unit
VCBO
50
Vdc
VCEO
50
Vdc
IC
100
mAdc
PD
*125
mW
TJ, Tstg
55 to +150
TJ
150
Collector Current
DEVICE MARKING
DTC114TE = 94

Characteristic
Symbol
Min
Typ
Max
Unit
CollectorBase Breakdown Voltage (IC = 50 Adc)
V(BR)CBO
50
Vdc
CollectorEmitter Breakdown Voltage (IC = 1.0 mAdc)
V(BR)CEO
50
Vdc
EmitterBase Breakdown Voltage (IE = 50 Adc)
V(BR)EBO
5.0
Vdc
CollectorBase Cutoff Current (VCB = 50 Vdc)
ICBO
500
nAdc
EmitterBase Cutoff Current (VEB = 4.0 Vdc)
IEBO
500
nAdc
hFE
100
300
600
VCE(sat)
0.3
Vdc
R1
7.0
10
13
kOhms
CollectorEmitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc)

Input Resistance
* Typical electrical characteristic curves are not available at this time.
2282
MOTOROLA
DTC114YE


individual components by integrating them into a single device. The DTC114YE
is housed in the SOT416/SC90 package which is ideal for low power surface
mount applications where board space is at a premium.
2
1
CASE 46301, STYLE 1

SOT416/SC90

Reduces Board Space
IN (1)
OUT (3)
R1
R2
GND (2)
R1 = 10 k
R2 = 47 k

Rating
Symbol
Value
Unit
Output Voltage
VO
50
Vdc
Input Voltage
VI
40
Vdc
Output Current
IO
100
mAdc
PD
*125
mW
TJ, Tstg
55 to +150
TJ
150
DEVICE MARKING
DTC114YE = 69

Characteristic
Symbol
Min
Typ
Max
Unit
VI(off)
0.3
Vdc
Input On Voltage (VO = 0.3 Vdc, IO = 1.0 mAdc)
VI(on)
1.4
Vdc
Output On Voltage (IO = 5.0 mAdc, II = 0.25 mAdc)
VO(on)
0.3
Vdc
II
0.88
mAdc
IO(off)
500
nAdc
DC Current Gain (VO = 5.0 Vdc, IO = 5.0 mAdc)
GI
68
Input Resistance
R1
7.0
10
13
kOhms
Resistance Ratio
R1/R2
0.17
0.21
0.25
REV 1
2283
DTC114YE
300
IO/II = 10
G I , DC CURRENT GAIN (NORMALIZED)
VO(on), OUTPUT VOLTAGE (V)
1
TA = 25C
25C
0.1
75C
0.01
0.001
20
40
60
25C
200
25C
150
100
50
0
80
Figure 1. VO(on) versus IO
8 10 15 20 40 50 60 70 80
90 100
10
TA = 75C
VO = 0.2 V
25C
V I , INPUT VOLTAGE (VOLTS)
Figure 2. GI, DC Current Gain
100
25C
10
VO = 5 V
1
TA = 75C
VO(on) = 10
250
4
6
VI, INPUT VOLTAGE (V)
10
TA = 25C
25C
75C
0.1
10
20
30
40
50
4
f = 1 MHz
lE = 0 V
TA = 25C
3.5
3
2.5
2
1.5
1
0.5
0
6 8 10 15 20 25 30 35
40
45
50
2284
DTC114YE
TYPICAL APPLICATIONS FOR NPN BRTs
+12 V
ISOLATED
LOAD
FROM P OR
OTHER LOGIC
Figure 6. Level Shifter: Connects 12 or 24 Volt Circuits to Logic
+12 V
VCC
OUT
IN
LOAD
Figure 7. Open Collector Inverter: Inverts the Input Signal
2285
MOTOROLA
Dual General Purpose Transistors

The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are
spinoffs of our popular SOT23/SOT323 threeleaded devices. They are designed
for general purpose amplifier applications and are housed in the SOT363 sixleaded
surface mount package. By putting two discrete devices in one package, these
devices are ideal for lowpower surface mount applications where board space is at
a premium.
MBT3904DW1T1
MBT3906DW1T1
MBT3946DW1T1
MBT3904DW1T1
MBT3906DW1T1
MBT3946DW1T1
hFE, 100300
Low VCE(sat), 0.4 V
6 5

Reduces Board Space

Available in 8 mm, 7inch/3,000 Unit Tape and Reel
CASE 419B01, STYLE 1
MBT3904DW1T1
(3)
(2)
(1)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
VCEO
40
40
Vdc
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
VCBO
60
40
Vdc
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
VEBO
6.0
5.0
Vdc

MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
IC
Q1
(4)
Q2
(5)
(6)
MBT3906DW1T1
(3)
(2)
(1)
mAdc
200
200
Q1
Q2
Characteristic
Total Package Dissipation(1)
TA = 25C
Symbol
Max
Unit
PD
150
mW
RqJA
833
C/W
TJ, Tstg
55 to
+150
(5)
(6)
MBT3946DW1T1*
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
1. recommended footprint.
DEVICE MARKING
(4)
(3)
(2)
Q1
(4)
(1)
Q2
(5)
(6)
MBT3904DW1T1 = MA MBT3946DW1T1 = 46
MBT3906DW1T1 = A2
*Q1 same as MBT3906DW1T1
Q2 same as MBT3904DW1T1
2286
MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1

Symbol
Min
Max
40
40
60
40
6.0
5.0
50
50
50
50
MBT3904DW1T1 (NPN)
40
70
100
60
30
300
MBT3906DW1T1 (PNP)
60
80
100
60
30
300
MBT3904DW1T1 (NPN)
0.2
0.3
MBT3906DW1T1 (PNP)
0.25
0.4
MBT3904DW1T1 (NPN)
0.65
0.85
0.95
MBT3906DW1T1 (PNP)
0.65
0.85
0.95
300
250
4.0
4.5
8.0
10.0
Characteristic
Unit
OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0)
(IC = 1.0 mAdc, IB = 0)
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)

(IC = 10 mAdc, IE = 0)
(IC = 10 mAdc, IE = 0)
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)

(IE = 10 mAdc, IC = 0)
(IE = 10 mAdc, IC = 0)
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
Base Cutoff Current

MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)

MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
V(BR)CEO
Vdc
V(BR)CBO
Vdc
V(BR)EBO
Vdc
IBL
nAdc
ICEX
nAdc
DC Current Gain
hFE
VCE(sat)
Vdc
VBE(sat)
Vdc

MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
fT
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
MHz
Cobo
pF
Cibo
pF
2. Pulse Test: Pulse Width 300 s; Duty Cycle 2.0%.
2287

Symbol
Characteristic
Input Impedance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)

MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)

MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
Output Admittance
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
Min
Max
1.0
2.0
10
12
0.5
0.1
8.0
10
100
100
400
400
1.0
3.0
40
60
5.0
4.0
hie
X 10 4
hre
hfe
mmhos
hoe
Noise Figure
(VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k , f = 1.0 kHz)
MBT3904DW1T1 (NPN)
(VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k , f = 1.0 kHz) MBT3906DW1T1 (PNP)
Unit
NF
dB
Delay Time
(VCC = 3.0 Vdc, VBE = 0.5 Vdc)

MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
td
35
35
Rise Time

MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
tr
35
35
Storage Time
(VCC = 3.0 Vdc, IC = 10 mAdc)

MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
ts
200
225
Fall Time
(IB1 = IB2 = 1.0 mAdc)

(IB1 = IB2 = 1.0 mAdc)
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
tf
50
75
2288
ns
ns

MBT3904DW1T1 (NPN)
DUTY CYCLE = 2%
300 ns
+3 V
+10.9 V
10 < t1 < 500 ms

275
+3 V
t1
+10.9 V
DUTY CYCLE = 2%
275
10 k
10 k
0
0.5 V
Cs < 4 pF*
< 1 ns
Cs < 4 pF*
1N916
9.1 V
< 1 ns



TJ = 25C
TJ = 125C
10
5000
MBT3904DW1T1 (NPN)
5.0
Cibo
3.0
Cobo
2.0
MBT3904DW1T1 (NPN)
VCC = 40 V
IC/IB = 10
2000
Q, CHARGE (pC)
CAPACITANCE (pF)
7.0
3000
1000
700
500
QT
300
200
QA
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30 40
100
70
50
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
2289

MBT3904DW1T1 (NPN)
500
500
IC/IB = 10
100
70
tr @ VCC = 3.0 V
50
30
20
VCC = 40 V
IC/IB = 10
300
200
t r, RISE TIME (ns)
TIME (ns)
300
200
40 V
100
70
50
30
20
15 V
10
7
5
10
MBT3904DW1T1 (NPN)
2.0 V
td @ VOB = 0 V
1.0
2.0 3.0
5.0 7.0 10
20
50 70 100
30
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
Figure 6. Rise Time
IC/IB = 10
200
500
ts = ts 1/8 tf
IB1 = IB2
VCC = 40 V
IB1 = IB2
300
200
IC/IB = 20
IC/IB = 20
200
MBT3904DW1T1 (NPN)
500
300
200
7
5
100
70
IC/IB = 20
50
IC/IB = 10
30
20
10
7
5
2.0 3.0
IC/IB = 10
30
20
10
MBT3904DW1T1 (NPN)
1.0
100
70
50
5.0 7.0 10
20
50 70 100
30
7
5
200
MBT3904DW1T1 (NPN)
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
Figure 8. Fall Time
200


IC = 1.0 mA
10
14
f = 1.0 kHz

IC = 0.5 mA
8
6

IC = 50 A
4
2
0
0.1
2290

IC = 100 A
0.2
0.4
1.0
2.0
MBT3904DW1T1 (NPN)
4.0
IC = 1.0 mA
12
12
10
20
40
100
IC = 0.5 mA
10
IC = 50 mA
8
IC = 100 mA
6
4
2
0
MBT3904DW1T1 (NPN)
0.1
0.2
0.4
1.0
2.0
4.0
10
20
f, FREQUENCY (kHz)
40
100

MBT3904DW1T1 (NPN)
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25C)
100
300
h fe , CURRENT GAIN
MBT3904DW1T1 (NPN)
200
100
70
50
30
0.1
0.2
0.3
0.5
1.0
2.0 3.0
5.0
20
10
5
2
1
10
MBT3904DW1T1 (NPN)
50
0.1
0.2
MBT3904DW1T1 (NPN)
5.0
2.0
1.0
0.5
0.1
0.2
0.3
0.5
1.0
2.0 3.0
5.0
10
hre , VOLTAGE FEEDBACK RATIO (x 10 4)
20
0.2
5.0
10
10
0.3
0.5
1.0
2.0 3.0
10
7.0
MBT3904DW1T1 (NPN)
5.0
3.0
2.0
1.0
0.7
0.5
0.1
0.2
0.3
0.5
1.0
2.0 3.0
5.0
10
2291

MBT3904DW1T1 (NPN)

2.0
TJ = +125C
VCE = 1.0 V
MBT3904DW1T1 (NPN)
+25C
1.0
0.7
55C
0.5
0.3
0.2
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200

1.0
TJ = 25C
MBT3904DW1T1 (NPN)
0.8
IC = 1.0 mA
10 mA
30 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
1.0
1.2
TJ = 25C
MBT3904DW1T1 (NPN)
0.8
VBE @ VCE =1.0 V
0.6
0.4
qVC FOR VCE(sat)

0
55C TO +25C
0.5
55C TO +25C
1.0
+25C TO +125C
qVB FOR VBE(sat)
1.5
0.2
0
+25C TO +125C
0.5
COEFFICIENT (mV/ C)
1.0
V, VOLTAGE (VOLTS)
MBT3904DW1T1 (NPN)
1.0
2292
2.0
5.0
10
20
50
100
200
2.0
20
40
60
80
100
120
140
160
180 200

MBT3906DW1T1 (PNP)
3V
3V
< 1 ns
+9.1 V
275
275
< 1 ns
10 k
+0.5 V
10 k
0
Cs < 4 pF*
10.6 V
10 < t1 < 500 ms
300 ns
DUTY CYCLE = 2%
Cs < 4 pF*
1N916
DUTY CYCLE = 2%
t1
10.9 V



TJ = 25C
TJ = 125C
5000
10
MBT3906DW1T1 (PNP)
Cobo
5.0
Q, CHARGE (pC)
CAPACITANCE (pF)
7.0
VCC = 40 V
IC/IB = 10
3000
2000
Cibo
3.0
2.0
MBT3906DW1T1 (PNP)
1000
700
500
300
200
QT
QA
1.0
0.1
0.2 0.3
0.5 0.7 1.0

2.0 3.0 5.0 7.0 10
100
70
50
20 30 40
1.0
2.0 3.0
5.0 7.0 10
20 30 50 70 100
200
500
500
IC/IB = 10
MBT3906DW1T1 (PNP)
300
200
MBT3906DW1T1 (PNP)
300
200
VCC = 40 V
IB1 = IB2
100
70
50
tr @ VCC = 3.0 V
15 V
30
20
TIME (ns)
IC/IB = 20
100
70
50
30
20
IC/IB = 10
40 V
10
7
5
2.0 V
td @ VOB = 0 V
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
10
7
5
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
2293

MBT3906DW1T1 (PNP)

IC = 1.0 mA
12
f = 1.0 kHz
4.0
IC = 0.5 mA
3.0

IC = 50 A
2.0
IC = 100 A
1.0
0
0.1
0.2
0.4
IC = 1.0 mA
10
5.0
IC = 0.5 mA
8
6
IC = 50 mA
IC = 100 mA
2
MBT3906DW1T1 (PNP)
1.0 2.0 4.0

10
f, FREQUENCY (kHz)
20
40
MBT3906DW1T1 (PNP)
0
100
0.1
0.2
40
0.4
1.0 2.0
4.0
10
20
Figure 25.
100
Figure 26.
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25C)
100
MBT3906DW1T1 (PNP)
300
200
100
70
50
MBT3906DW1T1 (PNP)
70
50
30
20
10
7
30
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
0.1
0.2
20
MBT3906DW1T1 (PNP)
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0

2294
5.0 7.0 10
5.0 7.0 10
hre , VOLTAGE FEEDBACK RATIO (x 10 4)
0.3
0.5 0.7 1.0
2.0 3.0
10
7.0
MBT3906DW1T1 (PNP)
5.0
3.0
2.0
1.0
0.7
0.5
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10


MBT3906DW1T1 (PNP)

2.0
TJ = +125C
VCE = 1.0 V
+25C
1.0
0.7
55C
0.5
0.3
MBT3906DW1T1 (PNP)
0.2
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0 10
20
30
70
50
100
200

1.0
TJ = 25C
MBT3906DW1T1 (PNP)
0.8
IC = 1.0 mA
10 mA
30 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
TJ = 25C
0.8
V, VOLTAGE (VOLTS)
1.0
VBE @ VCE = 1.0 V
0.6
MBT3906DW1T1 (PNP)
0.4
0.2
1.0
2.0
50
5.0
10
20
100
200
1.0
0.5
qVC FOR VCE(sat)
+25C TO +125C
55C TO +25C
MBT3906DW1T1 (PNP)
0.5
+25C TO +125C
1.0
55C TO +25C
qVB FOR VBE(sat)
1.5
2.0
20
40
60
80 100 120 140
160
180 200
2295
MOTOROLA
Chopper Transistor
MMBT404ALT1
PNP Silicon
COLLECTOR
3
1
BASE
3
2
EMITTER
1
2
MAXIMUM RATINGS
Rating

SOT 23 (TO 236AB)
Symbol
Value
Unit
VCEO
35
Vdc
VCBO
40
Vdc
EmitterBase Voltage
VEBO
25
Vdc
IC
150
mAdc
DEVICE MARKING
MMBT404ALT1 = 2N
Characteristic
Symbol
Max
Unit
PD
225
mW
1.8
mW/C
RJA
556
C/W
PD
300
mW
2.4
mW/C
RJA
417
C/W
TJ, Tstg
55 to +150
Total Device Dissipation FR-5 Board,*

TA = 25C
Derate above 25C
Alumina Substrate,** TA = 25C
Derate above 25C
* FR5 = 1.0 x 0.75 x 0.062 in.
** Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

Symbol
Min
Typ
Max
Unit

(IC = 10 mAdc, IB = 0)
V(BR)CEO
35
Vdc

(IC = 10 Adc, IE = 0)
V(BR)CBO
40
Vdc

(IE = 10 Adc, IC = 0)
V(BR)EBO
25
Vdc

(VCB = 10 Vdc, IE = 0)
ICBO
100
nAdc

(VEB = 10 Vdc, IC = 0)
IEBO
100
nAdc
Characteristic
OFF CHARACTERISTICS
2296
MMBT404ALT1
Characteristic
Symbol
Min
Typ
Max
Unit
DC Current Gain
hFE
100
400

VCE(sat)
0.15
0.2

VBE(sat)
0.85
1.0
Cobo
20
pF
Delay time
(VCC = 10 Vdc, IC = 10 mAdc) (Figure 1)
td
43
ns
Rise Time
(IB1 = 1.0 mAdc, VBE(off) = 14 Vdc)
tr
180
ns
Storage Time
(VCC = 10 Vdc, IC = 10 mAdc)
ts
675
ns
Fall Time
(IB1 = IB2 = 1.0 mAdc) (Figure 1)
tf
160
ns
ON CHARACTERISTICS
Vdc
Vdc
Output Capacitance
(VCB = 6.0 Vdc, IE = 0, f = 1.0 MHz)
VCC = 10 V
VBB
RBB
1.0 k
0.1 F
Vin
1.0 k
TO SCOPE
RB
10 k
51
Vin
(Volts)
ton, td, tr
toff, ts and tf
VBB
(Volts)
12
+1.4
+20.6
11.6
Voltages and resistor values shown are

for IC = 10 mA, IC/IB = 10 and IB1 = IB2
2297
MOTOROLA
VHF/UHF Transistor
MMBT918LT1
NPN Silicon
COLLECTOR
3
1
BASE
3
2
EMITTER
MAXIMUM RATINGS
1
2
Rating
Symbol
Value
Unit
VCEO
15
Vdc
VCBO
30
Vdc
VEBO
3.0
Vdc
IC
50
mAdc
Symbol
Max
Unit
Total Device Dissipation FR 5 Board,(1)

TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
RqJA
556
C/W
PD
300
mW
2.4
mW/C
RqJA
417
C/W
TJ, Tstg
55 to +150

SOT 23 (TO 236AB)
Characteristic

Derate above 25C
DEVICE MARKING
MMBT918LT1 = M3B

Characteristic
Symbol
Min
Max
Unit

(IC = 3.0 mAdc, IB = 0)
V(BR)CEO
15
Vdc

(IC = 1.0 mAdc, IE = 0)
V(BR)CBO
30
Vdc

(IE = 10 mAdc, IC = 0)
V(BR)EBO
3.0
Vdc
ICBO
50
nAdc
OFF CHARACTERISTICS

(VCB = 15 Vdc, IE = 0)
1. FR5 = 1.0 x 0.75 x 0.062 in.
2298
MMBT918LT1
Characteristic
Symbol
Min
Max
Unit
hFE
20

VCE(sat)
0.4
Vdc

VBE(sat)
1.0
Vdc
fT
600
MHz
3.0
1.7
ON CHARACTERISTICS
DC Current Gain

Output Capacitance
(VCB = 0 Vdc, IE = 0, f = 1.0 MHz)
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
2.0
pF
NF
6.0
dB
Power Output
(IC = 8.0 mAdc, VCB = 15 Vdc, f = 500 MHz)
Pout
30
mW
CommonEmitter Amplifier Power Gain

Gpe
11
dB
Noise Figure
(IC = 1.0 mAdc, VCE = 6.0 Vdc, RS = 50 , f = 60 MHz) (Figure 1)
pF
VCC
VBB
EXTERNAL
1000 pF BYPASS
100 k
0.018 F
C
0.018 F
3
50
G
RF
VM
0.018 F
0.018 F
NF TEST CONDITIONS
IC = 1.0 mA
VCE = 6.0 VOLTS
RS = 50
f = 60 MHz
Gpe TEST CONDITIONS
IC = 6.0 mA
VCE = 12 VOLTS
f = 200 MHz
Figure 1. NF, Gpe Measurement Circuit 20200
2299
MOTOROLA
MMBT1010LT1
MSD1010T1
Low Saturation Voltage

PNP Silicon Driver Transistors
Part of the GreenLine Portfolio of devices with energyconserving traits.

PNP GENERAL
PURPOSE DRIVER
TRANSISTORS
SURFACE MOUNT
This PNP Silicon Epitaxial Planar Transistor is designed to conserve energy

in general purpose driver applications. This device is housed in the SOT-23 and
SC59 packages which are designed for low power surface mount
applications.
Low VCE(sat), < 0.1 V at 50 mA
Applications
LCD Backlight Driver

Annunciator Driver
General Output Device Driver

Symbol
Value
Unit
V(BR)CBO
45
Vdc
V(BR)CEO
15
Vdc
V(BR)EBO
5.0
Vdc
IC
100
mAdc
Rating
CASE 31808, STYLE 6

SOT-23
3
2
1
DEVICE MARKING
MMBT1010LT1 = GLP
MSD1010T1 = GLP
CASE 318D04, STYLE 1

SC-59
Rating
Symbol
Max
Unit
Power Dissipation
TA = 25C
Derate above 25C
PD(1)
250
mW
1.8
mW/C
RJA
556
C/W
TJ
150
Tstg
55 ~ + 150
COLLECTOR
BASE
EMITTER
ELECTRICAL CHARACTERISTICS
Symbol
Condition
Min
Max
Unit
Characteristic
V(BR)CEO
IC = 10 mA, IB = 0
15
Vdc
V(BR)EBO
IE = 10 A, IE = 0
5.0
Vdc
ICBO
VCB = 20 V, IE = 0
0.1
ICEO
hFE1(2)
VCE = 10 V, IB = 0
100

DC Current Gain
VCE = 5 V, IC = 100 mA
300
600
VCE(sat)(2)
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
IC = 100 mA, IB = 10 mA
0.1
0.1
0.19
Vdc
VBE(sat)(2)
IC = 100 mA, IB = 10 mA
1.1
Vdc
(1) Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
(2) Pulse Test: Pulse Width 300 s, D.C. 2%.
REV 2
2300
MOTOROLA

MMBT2222AWT1
NPN Silicon
These transistors are designed for general purpose amplifier applications. They are housed in the SOT323/SC70 package which is
COLLECTOR
3
3
1
BASE
1
2
2
EMITTER

SOT 323/SC 70
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
40
Vdc
VCBO
75
Vdc
VEBO
6.0
Vdc
IC
600
mAdc
Symbol
Max
Unit
PD
150
mW
RqJA
833
C/W
TJ, Tstg
55 to +150
Characteristic
Total Device Dissipation FR 5 Board
TA = 25C
DEVICE MARKING
MMBT2222AWT1 = 1P

Symbol
Min
Max
Unit

(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
Vdc

(IC = 10 mAdc, IE = 0)
V(BR)CBO
75
Vdc

(IE = 10 mAdc, IC = 0)
V(BR)EBO
6.0
Vdc
Base Cutoff Current

IBL
20
nAdc

ICEX
10
nAdc
Characteristic
OFF CHARACTERISTICS
2301
MMBT2222AWT1
Characteristic
Symbol
Min
Max
Unit
35
50
75
100
40
0.3
1.0
0.6
1.2
2.0
fT
300
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
8.0
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
30
pF
Input Impedance
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
hie
0.25
1.25
k ohms

hre
4.0
X 10 4

hfe
75
375
Output Admittance
hoe
25
200
mmhos
Noise Figure
(VCE = 10 Vdc, IC = 100 mAdc, RS = 1.0 k ohms, f = 1.0 kHz)
NF
4.0
dB
((VCC = 3.0 Vdc, VBE = 0.5 Vdc,

td
10
tr
25
((VCC = 30 Vdc, IC = 150 mAdc,

ts
225
tf
60
DC Current Gain (1)
HFE

VCE(sat)

VBE(sat)
Vdc
Vdc

Delay Time
Rise Time
Storage Time
Fall Time
2302
ns
ns
MOTOROLA

NPN Silicon
MMBT2222LT1
MMBT2222ALT1*
COLLECTOR
3
1
BASE
2
EMITTER
MAXIMUM RATINGS
3
1
Rating
Symbol
2222
2222A
Unit
VCEO
30
40
Vdc
VCBO
60
75
Vdc
VEBO
5.0
6.0

SOT 23 (TO 236AB)
Vdc
IC
600
mAdc
Characteristic
Symbol
Max
Unit

TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
RqJA
556
C/W
PD
300
mW
2.4
mW/C
RqJA
417
C/W
TJ, Tstg
55 to +150

Derate above 25C
DEVICE MARKING
MMBT2222LT1 = M1B; MMBT2222ALT1 = 1P

Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
MMBT2222
MMBT2222A
V(BR)CEO
30
40
Vdc
MMBT2222
MMBT2222A
V(BR)CBO
60
75
Vdc
MMBT2222
MMBT2222A
V(BR)EBO
5.0
6.0
Vdc
Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
MMBT2222A
ICEX
10
nAdc

(VCB = 60 Vdc, IE = 0)
(VCB = 50 Vdc, IE = 0, TA = 125C)
(VCB = 60 Vdc, IE = 0, TA = 125C)
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
ICBO
0.01
0.01
10
10
Adc
MMBT2222A
IEBO
100
nAdc
Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
MMBT2222A
IBL
20
nAdc
0.062 in.
0.024 in. 99.5% alumina.
1. FR 5 = 1.0
0.75
2. Alumina = 0.4
0.3
2303
MMBT2222LT1 MMBT2222ALT1
Characteristic
Symbol
Min
Max
35
50
75
35
100
50
30
40
300
MMBT2222
MMBT2222A
0.4
0.3
MMBT2222
MMBT2222A
1.6
1.0
MMBT2222
MMBT2222A
0.6
1.3
1.2
MMBT2222
MMBT2222A
2.6
2.0
250
300
8.0
30
25
2.0
0.25
8.0
1.25
8.0
4.0
50
75
300
375
5.0
25
35
200
150
4.0
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mAdc, VCE = 10 Vdc, TA = 55C)
(IC = 150 mAdc, VCE = 10 Vdc) (3)
(IC = 150 mAdc, VCE = 1.0 Vdc) (3)
(IC = 500 mAdc, VCE = 10 Vdc) (3)
hFE
MMBT2222A only
MMBT2222
MMBT2222A
Collector Emitter Saturation Voltage (3)

VCE(sat)

Base Emitter Saturation Voltage (3)
Vdc
VBE(sat)
Vdc

Current Gain Bandwidth Product (4)
fT
MMBT2222
MMBT2222A
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
MHz
Cobo
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
pF
Cibo
MMBT2222
MMBT2222A
Input Impedance
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MMBT2222A
MMBT2222A

MMBT2222A
MMBT2222A

MMBT2222A
MMBT2222A
Output Admittance
MMBT2222A
MMBT2222A
Collector Base Time Constant

(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz)
MMBT2222A
Noise Figure
(IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 k, f = 1.0 kHz)
MMBT2222A
pF
hie
X 10 4
hre
hfe
mmhos
hoe
rb, Cc
ps
NF
dB
SWITCHING CHARACTERISTICS (MMBT2222A only)

Delay Time
Rise Time
Storage Time
Fall Time
((VCC = 30 Vdc, VBE(off) = 0.5 Vdc,

td
10
tr
25

ts
225
tf
60
ns
ns

300 ms, Duty Cycle
2.0%.
4. fT is defined as the frequency at which |hfe| extrapolates to unity.
2304
+ 30 V
+ 30 V
1.0 to 100 s,
DUTY CYCLE 2.0%
+16 V
0
2 V
200
+16 V
1.0 to 100 s,
DUTY CYCLE 2.0%
200
0
1 k
CS* < 10 pF
< 2 ns
1k
14 V
< 20 ns
CS* < 10 pF
1N914
4 V
Scope rise time < 4 ns
*Total shunt capacitance of test jig, connectors, and oscilloscope.
1000
700
500
300
200
100
70
50
30
20
10
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
20 30
50
70
100
200
5.0
10
300
500 700 1.0 k
1.0
0.8
0.6
0.4
0.2
0
0.005
0.01
0.02 0.03
0.05
0.1
0.2
0.3
0.5
1.0
2.0
3.0
20
30
50
2305
200
500
IC/IB = 10
TJ = 25C
tr @ VCC = 30 V
td @ VEB(off) = 0
30
20
10
7.0
5.0
200
ts = ts 1/8 tf
100
70
50
tf
30
20
10
7.0
5.0
3.0
2.0
5.0 7.0
10
200 300
20 30
50 70 100
5.0 7.0 10
500
20 30
50 70 100
200
IC = 1.0 mA, RS = 150

500 A, RS = 200
100 A, RS = 2.0 k
50 A, RS = 4.0 k
6.0
f = 1.0 kHz
8.0
RS = OPTIMUM
RS = SOURCE
RS = RESISTANCE
4.0
2.0
IC = 50 A
100 A
500 A
1.0 mA
6.0
4.0
2.0
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
20
100 200
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 k 100 k
Ceb
10
7.0
5.0
Ccb
3.0
0.5 0.7 1.0

2.0 3.0 5.0 7.0 10
20 30
50
f, FREQUENCY (kHz)
20
0.2 0.3
0
50
50 100
30
CAPACITANCE (pF)
500
10
8.0
2306
300
Figure 6. Turn Off Time
10
2.0
0.1
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25C
300
t, TIME (ns)
t, TIME (ns)
100
70
50
500
VCE = 20 V
TJ = 25C
300
200
100
70
50
1.0
2.0
3.0
5.0 7.0 10
20 30
50
70 100
1.0
+0.5
TJ = 25C
0
COEFFICIENT (mV/ C)
V, VOLTAGE (VOLTS)
0.8
1.0 V
0.6
0.4
0.2
RqVC for VCE(sat)
0.5
1.0
1.5
RqVB for VBE
2.0
2.5
0.1 0.2
50 100 200
0.5 1.0 2.0 5.0 10 20
500 1.0 k
0.1 0.2
0.5
1.0 2.0
5.0 10 20
50 100 200
500
2307
MOTOROLA
Switching Transistors
MMBT2369LT1
MMBT2369ALT1*
COLLECTOR
3
NPN Silicon
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
15
Vdc
VCES
40
Vdc
VCBO
40
Vdc
VEBO
4.5
Vdc
IC
200
mAdc
Symbol
Max
Unit

TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
RqJA
556
C/W
PD
300
mW
2.4
mW/C
RqJA
417
C/W
TJ, Tstg
55 to +150
3
1
2

SOT 23 (TO 236AB)
Characteristic

Derate above 25C
DEVICE MARKING
MMBT2369LT1 = M1J; MMBT2369ALT1 = 1JA

Characteristic
Symbol
Min
Typ
Max
15
40
40
4.5
0.4
30
0.4
Unit
OFF CHARACTERISTICS
(IC = 10 mAdc, IB = 0)
V(BR)CEO

(IC = 10 Adc, VBE = 0)
V(BR)CES

(IC = 10 mAdc, IE = 0)
V(BR)CBO

(IE = 10 mAdc, IC = 0)
V(BR)EBO

(VCB = 20 Vdc, IE = 0)
(VCB = 20 Vdc, IE = 0, TA = 150C)
(VCE = 20 Vdc, VBE = 0)

Vdc
Vdc
Vdc
Vdc
Adc
ICBO
Adc
ICES
MMBT2369A
1. FR 5 = 1.0
0.75 0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
2308
Characteristic
Symbol
Min
Typ
Max
40
40
20
30
20
20
120
120
0.25
0.20
0.30
0.25
0.50
0.7
0.85
1.02
1.15
1.60
4.0
5.0
5.0
13
8.0
12
10
18
Unit
ON CHARACTERISTICS
DC Current Gain (3)
MMBT2369
MMBT2369A
MMBT2369A
MMBT2369A
MMBT2369A
MMBT2369
MMBT2369A
hFE

(IC = 10 mAdc, IB = 1.0 mAdc, TA = +125C)
MMBT2369
MMBT2369A
MMBT2369A
MMBT2369A
MMBT2369A

(IC = 10 mAdc, IB = 1.0 mAdc, TA = 55C)
MMBT2369A
MMBT2369A
MMBT2369A
MMBT2369A
VCE(sat)
Vdc
VBE(sat)
Vdc

Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Cobo
pF
hfe
Storage Time
(IB1 = IB2 = IC = 10 mAdc)
ts
TurnOn Time
(VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc)
ton
TurnOff Time
(VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc, IB2 = 1.5 mAdc)
toff
ns
ns
ns
2309
SWITCHING TIME EQUIVALENT TEST CIRCUITS FOR 2N2369, 2N3227
t1
+10.6 V
0
1.5 V
3V
< 1 ns
270
3.3 k
0
9.15 V
Cs* < 4 pF
Figure 1. ton Circuit 10 mA
t1
2 V
10 V
95
+11.4 V
1k
Cs* < 4 pF
Figure 3. toff Circuit 10 mA
t1
10 V
0
8.6 V
0
< 1 ns
3.3 k
< 1 ns
PULSE WIDTH (t1) = 300 ns
DUTY CYCLE = 2%

DUTY CYCLE = 2%
+10.8 V
270
t1
+10.75 V
Cs* < 12 pF
1k
< 1 ns
PULSE WIDTH (t1) BETWEEN
10 AND 500 s
DUTY CYCLE = 2%

DUTY CYCLE = 2%
Figure 2. ton Circuit 100 mA
95
Cs* < 12 pF
1N916
Figure 4. toff Circuit 100 mA
* Total shunt capacitance of test jig and connectors.

TO OSCILLOSCOPE
INPUT IMPEDANCE = 50
RISE TIME = 1 ns
TURNON WAVEFORMS
Vin
0
ton
Vout
90%
0.1 F
220
10%
Vout
3.3 k
Vin
50
PULSE GENERATOR
Vin RISE TIME < 1 ns
SOURCE IMPEDANCE = 50
PW 300 ns
DUTY CYCLE < 2%
50
3.3 k
0.0023 F
0.005 F
0.0023 F
0.005 F
0.1 F
0.1 F
VBB +
TURNOFF WAVEFORMS
0
10%
Vin
90%
Vout
+V =3V
CC
toff
VBB = +12 V
Vin = 15 V
Figure 5. TurnOn and TurnOff Time Test Circuit
100
TJ = 25C
LIMIT
TYPICAL
Cib
SWITCHING TIMES (nsec)
CAPACITANCE (pF)
4
3
Cob
1
0.1
tr (VCC = 3 V)
20
tf
tr
VCC = 10 V
10
5
ts
td
2
0.2
0.5
1.0
2.0
5.0
Figure 6. Junction Capacitance Variations
2310
F = 10
VCC = 10 V
VOB = 2 V
50
10
5
10
20
50
100
Figure 7. Typical Switching Times
500
200
CHARGE (pC)
QT, F = 10
VCC = 10 V
25C
100C
QT, F = 40
t1
+5 V
3V
10 pF MAX
100
0
50
< 1 ns

DUTY CYCLE = 2%
QA, VCC = 10 V
QA, VCC = 3 V
20
VALUES REFER TO
IC = 10 mA TEST
270
Cs* < 4 pF
4.3 k
10
2
5
10
20
50
100
C < COPT
C
C=0
10 V
980
0
4 V
COPT
500
< 1 ns
Cs* < 3 pF

DUTY CYCLE = 2%
TIME

VCE , MAXIMUM COLLECTOREMITTER VOLTAGE (VOLTS)
t1
+6 V
Figure 11. Storage Time Equivalent Test Circuit
1.0
TJ = 25C
0.8
IC = 3 mA
IC = 10 mA
IC = 30 mA
IC = 50 mA
IC = 100 mA
0.6
0.4
0.2
0.02
0.05
0.1
0.2
0.5
1
10
20
Figure 12. Maximum Collector Saturation Voltage Characteristics
2311
hFE , MINIMUM DC CURRENT GAIN
200
TJ = 125C
VCE = 1 V
75C
25C
100
TJ = 25C and 75C

15C
50
55C
20
1
10
20
50
100
Figure 13. Minimum Current Gain Characteristics
1.0
F = 10
TJ = 25C
1.2
0.5
MAX VBE(sat)
1.0
COEFFICIENT (mV/ C)
V(sat) , SATURATION VOLTAGE (VOLTS)
1.4
MIN VBE(sat)
0.8
0.6
APPROXIMATE DEVIATION
FROM NOMINAL
0.5
VC
VB
1.0
55C to +25C
0.15 mV/C
25C to 125C
0.15 mV/C
0.4 mV/C
0.3 mV/C
(25C to 125C)
(55C to +25C)
(55C to +25C)
(25C to 125C)
1.5
VB for VBE(sat)
0.4
0.2
VC for VCE(sat)
MAX VCE(sat)
1
5
10
20
2.0
50
2312
100
2.5
10
20
30
40
50
60
70
80
90
100
Figure 15. Typical Temperature Coefficients
MOTOROLA
Low Noise Transistor
MMBT2484LT1
COLLECTOR
3
NPN Silicon
1
BASE
2
EMITTER
MAXIMUM RATINGS
3
1
Rating
Symbol
Value
Unit
VCEO
60
Vdc
VCBO
60
Vdc
VEBO
6.0
Vdc
IC
50
mAdc
Symbol
Max
Unit

TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
RqJA
556
C/W
PD
300
mW
2.4
mW/C
RqJA
417
C/W
TJ, Tstg
55 to +150

SOT 23 (TO 236AB)
Characteristic

Derate above 25C
DEVICE MARKING
MMBT2484LT1 = 1U

Characteristic
Symbol
Min
Max
60
60
5.0
10
10
10
Unit
OFF CHARACTERISTICS
(IC = 10 mAdc, IB = 0)
V(BR)CEO

(IC = 10 mAdc, IE = 0)
V(BR)CBO

(IE = 10 mAdc, IC = 0)
V(BR)EBO

(VCB = 45 Vdc, IE = 0)
(VCB = 45 Vdc, IE = 0, TA = 150C)
ICBO

(VEB = 5.0 Vdc, IC = 0)
IEBO
0.062 in.
0.024 in. 99.5% alumina.
Vdc
Vdc
Vdc
nAdc
Adc
nAdc
1. FR 5 = 1.0
0.75
2. Alumina = 0.4
0.3
2313
MMBT2484LT1
Characteristic
Symbol
Min
Max
250
800
0.35
0.95
6.0
6.0
3.0
Unit
ON CHARACTERISTICS
DC Current Gain
hFE

VCE(sat)

VBE(on)
Vdc
Vdc

Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Cobo
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
Noise Figure
(IC = 10 mAdc, VCE = 5.0 Vdc, RS = 10 k, f = 1.0 kHz, BW = 200 Hz)
RS
pF
pF
NF
dB
in
en
IDEAL
TRANSISTOR
2314
MMBT2484LT1
(VCE = 5.0 Vdc, TA = 25C)
NOISE VOLTAGE
30
30
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
20
RS 0
IC = 10 mA
20
3.0 mA
10
1.0 mA
7.0
5.0
RS 0
f = 10 Hz
10
100 Hz
7.0
10 kHz
1.0 kHz
5.0
300 A
3.0
10
20
50 100 200
3.0
0.01 0.02
500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
f, FREQUENCY (Hz)
IC = 10 mA
3.0 mA
1.0 mA
300 A
100 A
0.3
0.2
RS 0
0.1
10
20
10 A
50 100 200
10
16
3.0
1.0
0.7
0.5
5.0
20
BANDWIDTH = 1.0 Hz
2.0
0.05 0.1 0.2

0.5 1.0
2.0
10
7.0
5.0
100 kHz

12
500 A
8.0
IC = 1.0 mA
100 A
10 A
4.0
30 A
0
10
500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
f, FREQUENCY (Hz)
20
50 100 200 500 1 k 2 k

5 k 10 k 20 k 50 k 100 k

100 Hz NOISE DATA
20
BANDWIDTH = 1.0 Hz
IC = 10 mA
16
100 A
100
70
50
3.0 mA
1.0 mA
30
300 A
20
10
7.0
5.0
30 A
10 A
300
200
IC = 10 mA
3.0 mA
1.0 mA
12
300 A
8.0
100 A
30 A
4.0
10 A
BANDWIDTH = 1.0 Hz
0
3.0
10
20
50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k

10
20
50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k

2315
MMBT2484LT1
4.0
3.0
VCE = 5.0 V
2.0
TA = 125C
25C
1.0
55C
0.7
0.5
0.4
0.3
0.2
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
0.4
RVBE, BASEEMITTER
1.0
TJ = 25C
V, VOLTAGE (VOLTS)
0.8
0.6
VBE @ VCE = 5.0 V
0.4
0.2
0.8
1.2
TJ = 25C to 125C
1.6
2.0
55C to 25C
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
50
2.4
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10
100
8.0
C, CAPACITANCE (pF)
6.0
TJ = 25C
Cob
4.0
3.0
Ceb
Cib
Ccb
2.0
1.0
0.8
0.1
0.2
1.0
2.0
5.0
0.5
10
20
2316
50 100
50
100
20
500
300
200
100
VCE = 5.0 V
TJ = 25C
70
50
1.0
2.0
3.0
5.0 7.0 10
20 30
50 70 100
MOTOROLA

MMBT2907AWT1
PNP Silicon

applications. They are housed in the SOT323/SC70 package
which is designed for low power surface mount applications.
COLLECTOR
3
3
1
BASE
1
2
2
EMITTER

SOT 323/SC 70
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
60
Vdc
VCBO
60
Vdc
VEBO
5.0
Vdc
IC
600
mAdc
Symbol
Max
Unit
PD
150
mW
RqJA
833
C/W
TJ, Tstg
55 to +150
Characteristic
TA = 25C
DEVICE MARKING
MMBT2907AWT1 = 2F

Symbol
Min
Max
Unit

(IC = 10 mAdc, IB = 0)
V(BR)CEO
60
Vdc

(IC = 10 mAdc, IE = 0)
V(BR)CBO
60
Vdc

(IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
Vdc
Base Cutoff Current

IBL
50
nAdc

ICEX
50
nAdc
Characteristic
OFF CHARACTERISTICS
1. FR5 = 1.0 x 0.75 x 0.062 in.

300 ms, Duty Cycle
v 2.0%.
2317
MMBT2907AWT1
Characteristic
Symbol
Min
Max
Unit
75
100
100
100
50
0.4
1.6
1.3
2.6
fT
200
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
8.0
pF
Input Capacitance
(VEB = 2.0 Vdc, IC = 0, f = 1.0 MHz)
Cibo
30
pF
ton
45
td
10
Rise Time
tr
40
Storage Time
ts
80
tf
30
toff
100
DC Current Gain (1)
HFE

VCE(sat)

VBE(sat)
Vdc
Vdc

TurnOn Time
Delay Time
Fall Time
TurnOff Time
2318
(VCC = 30
30 Vd
Vdc,
IC = 150
150 mAdc, IB1 = 15
15 mAdc)
(VCC = 6.0
6 0 Vd
Vdc, IC = 150
150 mAdc,
Ad
ns
MOTOROLA
MMBT2907LT1
MMBT2907ALT1*
COLLECTOR
3
PNP Silicon
1
BASE
2
EMITTER
MAXIMUM RATINGS
3
1
Rating
Symbol
2907
2907A
Unit
VCEO
40
60
Vdc
VCBO
VEBO
5.0
Vdc
IC
600
mAdc
Symbol
Max
Unit

TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
RqJA
556
C/W
PD
300
mW
2.4
mW/C
RqJA
417
C/W
TJ, Tstg
55 to +150
60

SOT 23 (TO 236AB)
Vdc
Characteristic

Derate above 25C
DEVICE MARKING
MMBT2907LT1 = M2B; MMBT2907ALT1 = 2F

Characteristic
Symbol
Min
Max
40
60
Unit
OFF CHARACTERISTICS
(IC = 10 mAdc, IB = 0)
V(BR)CEO
MMBT2907
MMBT2907A
Vdc
V(BR)CBO
60
Vdc
V(BR)EBO
5.0
Vdc
ICEX
50
nAdc
MMBT2907
MMBT2907A
0.020
0.010
MMBT2907
MMBT2907A
20
10
50
Collector Cutoff Current (VCE = 30 Vdc, VBE(off) = 0.5 Vdc)

(VCB = 50 Vdc, IE = 0)
(VCB = 50 Vdc, IE = 0, TA = 125C)

Base Current (VCE = 30 Vdc, VEB(off) = 0.5 Vdc)

Adc
ICBO
IB
nAdc
1. FR 5 = 1.0
0.75 0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
300 ms, Duty Cycle
2.0%.
2319
Characteristic
Symbol
Min
Max
MMBT2907
MMBT2907A
35
75
MMBT2907
MMBT2907A
50
100
MMBT2907
MMBT2907A
75
100
(IC = 150 mAdc, VCE = 10 Vdc) (3)
MMBT2907
MMBT2907A
100
300
(IC = 500 mAdc, VCE = 10 Vdc) (3)
MMBT2907
MMBT2907A
30
50
0.4
1.6
1.3
2.6
200
8.0
30
ton
45
td
10
tr
40
toff
100
ts
80
tf
30
Unit
ON CHARACTERISTICS
DC Current Gain
hFE

VCE(sat)

VBE(sat)
Vdc
Vdc

Current Gain Bandwidth Product (3),(4)
fT
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
Input Capacitance
(VEB = 2.0 Vdc, IC = 0, f = 1.0 MHz)
Cibo
MHz
pF
pF
TurnOn Time
(VCC = 30
30 Vdc,
Vd IC = 150
150 mAdc,
Ad
IB1 = 15
15 mAdc)
Delay Time
Rise Time
TurnOff Time
(VCC = 6.0
6 0 Vd
Vdc, IC = 150
150 mAdc,
Ad
IB1 = IB2 = 15
15 mAdc)
Storage Time
Fall Time
ns
ns

300 ms, Duty Cycle
2.0%.
INPUT
Zo = 50
PRF = 150 PPS
RISE TIME 2.0 ns
P.W. < 200 ns
30 V
200
1.0 k
TO OSCILLOSCOPE
RISE TIME 5.0 ns
50
16 V
200 ns
Figure 1. Delay and Rise Time Test Circuit
2320
INPUT
Zo = 50
PRF = 150 PPS
RISE TIME 2.0 ns
P.W. < 200 ns
+15 V
6.0 V
1.0 k
1.0 k
0
30 V
50
37
TO OSCILLOSCOPE
RISE TIME 5.0 ns
1N916
200 ns
Figure 2. Storage and Fall Time Test Circuit
hFE , NORMALIZED CURRENT GAIN
3.0
VCE = 1.0 V
VCE = 10 V
2.0
TJ = 125C
25C
1.0
55C
0.7
0.5
0.3
0.2
0.1
0.2 0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
50 70 100
200 300
500
1.0
0.8
IC = 1.0 mA
10 mA
100 mA
500 mA
0.6
0.4
0.2
0
0.005
0.01
0.02 0.03 0.05 0.07 0.1
0.2
0.3 0.5 0.7 1.0

3.0
2.0
5.0 7.0 10
20 30
50
500
tr
100
70
50
300
VCC = 30 V
IC/IB = 10
TJ = 25C
30
20
td @ VBE(off) = 0 V
tf
3.0
5.0 7.0 10
2.0 V
20 30
50 70 100
100
70
50
30
ts = ts 1/8 tf
20
10
7.0
5.0
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25C
200
t, TIME (ns)
t, TIME (ns)
300
200
200 300 500
10
7.0
5.0
5.0 7.0 10
20 30
50 70 100
200 300 500
2321
TYPICAL SMALL SIGNAL CHARACTERISTICS
NOISE FIGURE
10
10
8.0
8.0
IC = 1.0 mA, Rs = 430

500 A, Rs = 560
50 A, Rs = 2.7 k
100 A, Rs = 1.6 k
6.0
4.0
Rs = OPTIMUM SOURCE RESISTANCE
2.0
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
20
50
C, CAPACITANCE (pF)
50
100
200
500 1.0 k 2.0 k
20 k
Rs, SOURCE RESISTANCE (OHMS)
Ceb
10
7.0
5.0
Ccb
3.0
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
20 30
50 k
400
300
200
100
80
VCE = 20 V
TJ = 25C
60
40
30
20
1.0 2.0
5.0
10
20
50
100 200
500 1000
+0.5
1.0
TJ = 25C
0.6
COEFFICIENT (mV/ C)
0.8
0.4
0.2
RqVC for VCE(sat)

0.5
1.0
1.5
RqVB for VBE
2.0
0
0.1 0.2
2322
5.0 k 10 k
f, FREQUENCY (kHz)
20
V, VOLTAGE (VOLTS)
IC = 50 A
100 A
500 A
1.0 mA
4.0
100
30
2.0
0.1
6.0
2.0
f = 1.0 kHz
0.5 1.0 2.0 5.0 10 20
50 100 200
500
2.5
0.1 0.2 0.5 1.0 2.0
5.0 10 20
50 100 200 500
MOTOROLA
MMBT3640LT1
COLLECTOR
3
PNP Silicon
1
BASE
2
EMITTER
MAXIMUM RATINGS
3
1
Rating
Symbol
Value
Unit
VCEO
12
Vdc
VCBO
12
Vdc
VEBO
4.0
Vdc
IC
80
mAdc
Symbol
Max
Unit

TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
RqJA
556
C/W
PD
300
mW
2.4
mW/C
RqJA
417
C/W
TJ, Tstg
55 to +150

SOT 23 (TO 236AB)
Characteristic

Derate above 25C
DEVICE MARKING
MMBT3640LT1 = 2J

Characteristic
Symbol
Min
Max
Unit
Collector Emitter Breakdown Voltage (IC = 100 Adc, VBE = 0)
V(BR)CES
12
Vdc
Collector Emitter Sustaining Voltage(1) (IC = 10 mAdc, IB = 0)
VCEO(sus)
12
Vdc
V(BR)CBO
12
Vdc
V(BR)EBO
4.0
Vdc
0.01
1.0
10
OFF CHARACTERISTICS

(VCE = 6.0 Vdc, VBE = 0)
(VCE = 6.0 Vdc, VBE = 0, TA = 65C)
Base Cutoff Current (VCE = 6.0 Vdc, VEB = 0)
0.062 in.
0.024 in. 99.5% alumina.
Adc
ICES
IB
nAdc
1. FR 5 = 1.0
0.75
2. Alumina = 0.4
0.3
2323
MMBT3640LT1
Characteristic
Symbol
Min
Max
30
20
120
0.2
0.6
0.25
0.75
0.8
0.95
1.0
1.5
500
3.5
3.5
Unit
DC Current Gain
hFE

VCE(sat)

VBE(sat)
Vdc
Vdc

fT
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Cobo
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
MHz
pF
pF
Delay Time
Rise Time
Storage Time
Fall Time
((VCC = 6.0 Vdc, IC = 50 mAdc,

VEB(off) = 1.9 Vdc, IB1 = 5.0 mAdc)
td
10
tr
30

IB1 = IB2 = 5.0 mAdc)
ts
20
tf
12
25
60
35
75
TurnOn Time
(VCC = 6.0 Vdc, IC = 50 mAdc, VEB(off) = 1.9 Vdc, IB1 = 5.0 mAdc)
ton
TurnOff Time
(VCC = 6.0 Vdc, IC = 50 mAdc, VEB(off) = 1.9 Vdc, IB1 = IB2 = 5.0 mAdc)
(VCC = 1.5 Vdc, IC = 10 mAdc, IB1 = IB2 = 0.5 mAdc)
toff
ns
ns
ns
VBB = +1.9 V VCC = 6.0 V

1.0 k
0
ns
0.1 F
680
VBB = 6.0 V
110
VCC = 1.5 V
5.0 k
Vout
5.0 V
0.1 F
5.0 k
130
Vout
Vin
6.8 V
TO SAMPLING SCOPE
PULSE SOURCE
51
INPUT Z 100 k
RISE TIME 1.0 ns
RISE TIME 1.0 ns
PULSE WIDTH 100 ns
Zin = 50 OHMS
NOTES: Collector Current = 50 mA,
FALL TIME 1.0 ns
NOTES: TurnOn and TurnOff Time
NOTES: Base Currents = 5.0 mA.
Vin
0
TO SAMPLING SCOPE
PULSE SOURCE
51
INPUT Z 100 k
RISE TIME 1.0 ns
RISE TIME 1.0 ns
PULSE WIDTH 200 ns
Zin = 50 OHMS
FALL TIME 1.0 ns
Figure 1.
Figure 2.
2324
MMBT3640LT1
200
1.4
1.2
TJ = 125C
100
25C
70
50
V, VOLTAGE (VOLTS)
VCE = 1.0 V
55C
30
TJ = 25C
1.0
0.8

0.6
0.4
20
0.2
10
0.1 0.2
5.0 10 20
0.5 1.0 2.0
50
0
0.1 0.2
100
+0.5
1.0
TJ = 25C
0.8
IC = 1.0 mA
5.0 mA
20 mA
80 mA
0.6
0.4
0.2
0
0.01 0.02
0.05 0.1 0.2

0.5 1.0
2.0
5.0
*APPLIES FOR IC/IB hFE/4
100
55C to 25C
0.5
1.0
25C to 125C
1.5
55C to 25C
RVB for VBE

2.0
0.1 0.2
10
25C to 125C
RVC for VCE(sat)
0.5 1.0 2.0

5.0 10 20
50
100
5.0
2000
TJ = 25C
f = 100 MHz
TJ = 25C
VCE = 10 V
3.0
C, CAPACITANCE (pF)
50
0.5 1.0 2.0 5.0 10 20

1000
1.0 V
800
600
400
2.0
Cobo
Cibo
1.0
0.7
200
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
0.5
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
2325
MOTOROLA

NPN Silicon
MMBT3904LT1
COLLECTOR
3
1
BASE
3
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
40
Vdc
VCBO
60
Vdc
VEBO
6.0
Vdc
IC
200
mAdc
Symbol
Max
Unit

TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
RqJA
556
C/W
PD
300
mW
2.4
mW/C
RqJA
417
C/W
TJ, Tstg
55 to +150

SOT 23 (TO 236AB)
Characteristic

Derate above 25C
DEVICE MARKING
MMBT3904LT1 = 1AM

Symbol
Min
Max
Unit

(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
Vdc

(IC = 10 mAdc, IE = 0)
V(BR)CBO
60
Vdc

(IE = 10 mAdc, IC = 0)
V(BR)EBO
6.0
Vdc
Base Cutoff Current

IBL
50
nAdc

ICEX
50
nAdc
Characteristic
OFF CHARACTERISTICS

1. FR 5 = 1.0
0.75 0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
300 ms, Duty Cycle
2.0%.
REV 1
2326
MMBT3904LT1
Characteristic
Symbol
Min
Max
Unit
40
70
100
60
30
300
0.2
0.3
0.65
0.85
0.95
fT
300
MHz
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Cobo
4.0
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
8.0
pF
Input Impedance
hie
1.0
10
k ohms

hre
0.5
8.0
X 10 4

hfe
100
400
Output Admittance
hoe
1.0
40
mmhos
Noise Figure
(VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k ohms, f = 1.0 kHz)
NF
5.0
dB
((VCC = 3.0 Vdc, VBE = 0.5 Vdc,

td
35
tr
35
((VCC = 3.0 Vdc,

IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc)
ts
200
tf
50
DC Current Gain (1)
HFE

VCE(sat)

VBE(sat)
Vdc
Vdc

Delay Time
Rise Time
Storage Time
Fall Time
ns
ns
2327
MMBT3904LT1
DUTY CYCLE = 2%
300 ns
+3 V
+10.9 V
10 < t1 < 500 ms

275
t1
DUTY CYCLE = 2%
+3 V
+10.9 V
275
10 k
10 k
0
0.5 V
CS < 4 pF*
< 1 ns
CS < 4 pF*
1N916
9.1 V
< 1 ns


TJ = 25C
TJ = 125C
10
5000
2000
5.0
Q, CHARGE (pC)
CAPACITANCE (pF)
VCC = 40 V
IC/IB = 10
3000
7.0
Cibo
3.0
Cobo
2.0
1000
700
500
QT
300
200
QA
1.0
0.1
2328
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30 40
100
70
50
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
MMBT3904LT1
500
500
IC/IB = 10
100
70
tr @ VCC = 3.0 V
50
30
20
VCC = 40 V
IC/IB = 10
300
200
t r, RISE TIME (ns)
TIME (ns)
300
200
40 V
100
70
50
30
20
15 V
10
7
5
10
2.0 V
td @ VOB = 0 V
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
Figure 6. Rise Time
IC/IB = 10
200
500
ts = ts 1/8 tf
IB1 = IB2
VCC = 40 V
IB1 = IB2
300
200
IC/IB = 20
IC/IB = 20
200
500
300
200
7
5
100
70
IC/IB = 20
50
IC/IB = 10
30
20
100
70
50
10
10
7
5
7
5
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
IC/IB = 10
30
20
1.0
2.0 3.0
5.0 7.0 10
20
30
200
50 70 100
Figure 8. Fall Time


IC = 1.0 mA
10
14
f = 1.0 kHz

IC = 0.5 mA
8
6

IC = 50 A
4
2
0
0.1

IC = 100 A
0.2
0.4
1.0
2.0
IC = 1.0 mA
12
12
IC = 0.5 mA
10
IC = 50 mA
8
IC = 100 mA
6
4
2
4.0
10
20
40
100
0.1
0.2
0.4
1.0
2.0
4.0
10
20
f, FREQUENCY (kHz)
Figure 9.
Figure 10.
40
100
2329
MMBT3904LT1
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25C)
100
h fe , CURRENT GAIN
300
200
100
70
50
30
0.1
0.2
0.3
0.5
1.0
2.0 3.0
5.0
50
20
10
5
2
1
10
0.1
0.2
10
5.0
2.0
1.0
0.5
0.1
0.2
0.3
0.5
1.0
2.0 3.0
5.0
10
5.0
10
20
0.2
0.3
0.5
1.0
2.0 3.0
5.0
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
10
0.1
0.2
0.3
0.5
1.0
2.0 3.0

2.0
TJ = +125C
VCE = 1.0 V
+25C
1.0
0.7
55C
0.5
0.3
0.2
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
2330
MMBT3904LT1
1.0
TJ = 25C
0.8
IC = 1.0 mA
10 mA
30 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
1.0
1.2
TJ = 25C
0.8
VBE @ VCE =1.0 V
0.6
0.4
qVC FOR VCE(sat)

0
55C TO +25C
0.5
55C TO +25C
1.0
+25C TO +125C
qVB FOR VBE(sat)
1.5
0.2
0
+25C TO +125C
0.5
COEFFICIENT (mV/ C)
V, VOLTAGE (VOLTS)
1.0
1.0
2.0
5.0
10
20
50
100
200
2.0
20
40
60
80
100
120
140
160
180 200
2331
MOTOROLA
NPN
MMBT3904WT1
PNP
MMBT3906WT1

NPN and PNP Silicon
These transistors are designed for general purpose amplifier applications. They are
housed in the SOT323/SC70 which is designed for low power surface mount
applications.
MAXIMUM RATINGS
Symbol
Value
Unit
Rating
MMBT3904WT1
MMBT3906WT1
VCEO
40
40
Vdc
MMBT3904WT1
MMBT3906WT1
VCBO
60
40
Vdc
MMBT3904WT1
MMBT3906WT1
VEBO
6.0
5.0
Vdc
IC
200
200
mAdc
GENERAL PURPOSE
AMPLIFIER TRANSISTORS
SURFACE MOUNT
Collector Current Continuous MMBT3904WT1

MMBT3906WT1
Characteristic
Total Device Dissipation(1)
TA = 25C
Symbol
Max
Unit
PD
150
mW
RqJA
833
C/W
TJ, Tstg
55 to +150
CASE 41902, STYLE 3

SOT323/SC70
DEVICE MARKING
MMBT3904WT1 = AM
MMBT3906WT1 = 2A

Symbol
Characteristic
Min
Max
40
40
60
40
6.0
5.0
50
50
50
50
Unit
OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0)
(IC = 1.0 mAdc, IB = 0)
MMBT3904WT1
MMBT3906WT1

(IC = 10 mAdc, IE = 0)
(IC = 10 mAdc, IE = 0)
MMBT3904WT1
MMBT3906WT1

(IE = 10 mAdc, IC = 0)
(IE = 10 mAdc, IC = 0)
MMBT3904WT1
MMBT3906WT1
Base Cutoff Current

MMBT3904WT1
MMBT3906WT1

MMBT3904WT1
MMBT3906WT1
V(BR)CEO
Vdc
V(BR)CBO
Vdc
V(BR)EBO
Vdc
IBL
nAdc
ICEX
nAdc
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.
300 ms; Duty Cycle
2.0%.
2332
NPN MMBT3904WT1 PNP MMBT3906WT1

Symbol
Min
Max
MMBT3904WT1
40
70
100
60
30
300
MMBT3906WT1
60
80
100
60
30
300
MMBT3904WT1
0.2
0.3
MMBT3906WT1
0.25
0.4
MMBT3904WT1
0.65
0.85
0.95
MMBT3906WT1
0.65
0.85
0.95
300
250
4.0
4.5
8.0
10.0
1.0
2.0
10
12
0.5
0.1
8.0
10
100
100
400
400
1.0
3.0
40
60
5.0
4.0
Characteristic
Unit
DC Current Gain
hFE
VCE(sat)
Vdc
VBE(sat)
Vdc

MMBT3904WT1
MMBT3906WT1
fT
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
MMBT3904WT1
MMBT3906WT1
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
MMBT3904WT1
MMBT3906WT1
Input Impedance
MMBT3904WT1
MMBT3906WT1

MMBT3904WT1
MMBT3906WT1

MMBT3904WT1
MMBT3906WT1
Output Admittance
MMBT3904WT1
MMBT3906WT1
Noise Figure
MMBT3904WT1
MMBT3906WT1
MHz
Cobo
pF
Cibo
pF
hie
X 10 4
hre
hfe
mmhos
hoe
NF
dB
Delay Time

MMBT3904WT1
MMBT3906WT1
td
35
35
Rise Time

MMBT3904WT1
MMBT3906WT1
tr
35
35
Storage Time

MMBT3904WT1
MMBT3906WT1
ts
200
225
Fall Time
(IB1 = IB2 = 1.0 mAdc)

(IB1 = IB2 = 1.0 mAdc)
MMBT3904WT1
MMBT3906WT1
tf
50
75
ns
ns
2333

MMBT3904WT1
DUTY CYCLE = 2%
300 ns
+3 V
+10.9 V
10 < t1 < 500 ms
t1
DUTY CYCLE = 2%
275
+3 V
+10.9 V
275
10 k
10 k
0
0.5 V
CS < 4 pF*
< 1 ns
CS < 4 pF*
1N916
9.1 V
< 1 ns


TJ = 25C
TJ = 125C
10
5000
MMBT3904WT1
2000
5.0
Q, CHARGE (pC)
CAPACITANCE (pF)
VCC = 40 V
IC/IB = 10
3000
7.0
Cibo
3.0
Cobo
2.0
MMBT3904WT1
1000
700
500
QT
300
200
QA
1.0
0.1
2334
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30 40
100
70
50
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200

MMBT3904WT1
500
500
IC/IB = 10
200
100
70
50
tr @ VCC = 3.0 V
30
20
40 V
10
7
5
15 V
MMBT3904WT1
td @ VOB = 0 V
1.0
5.0 7.0 10
2.0 3.0
20
50 70 100
30
100
70
50
30
20
10
7
5
2.0 V
200
MMBT3904WT1
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
Figure 6. Rise Time
200
500
500
300
200
IC/IB = 20
ts = ts 1/8 tf
IB1 = IB2
IC/IB = 10
VCC = 40 V
IB1 = IB2
300
200
IC/IB = 20
100
70
50
VCC = 40 V
IC/IB = 10
300
t r, RISE TIME (ns)
TIME (ns)
300
200
IC/IB = 20
IC/IB = 10
30
20
10
7
5
2.0 3.0
IC/IB = 10
30
20
10
7
5
MMBT3904WT1
1.0
100
70
50
5.0 7.0 10
20
50 70 100
30
200
MMBT3904WT1
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
Figure 8. Fall Time
200


IC = 1.0 mA
10
14
f = 1.0 kHz

IC = 0.5 mA
8
6

IC = 50 A
4
2
0
0.1

IC = 100 A
0.2
0.4
1.0
2.0
IC = 1.0 mA
12
12
IC = 0.5 mA
10
IC = 50 mA
IC = 100 mA
6
4
2
MMBT3904WT1
4.0
10
20
40
MMBT3904WT1
100
0
0.1
0.2
0.4
1.0
2.0
4.0
10
20
f, FREQUENCY (kHz)
40
100
2335

MMBT3904WT1
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25C)
100
300
MMBT3904WT1
h fe , CURRENT GAIN
200
100
70
50
MMBT3904WT1
50
20
10
5
2
1
30
0.1
0.2
0.3
0.5
1.0
2.0 3.0
5.0
10
0.1
0.2
10
5.0
10
10
10
5.0
20
MMBT3904WT1
5.0
2.0
1.0
0.5
0.2
0.3
0.5
1.0
2.0 3.0
7.0
MMBT3904WT1
5.0
3.0
2.0
1.0
0.7
0.5
0.1
0.2
0.3
0.5
1.0
2.0 3.0
2336
5.0
10
0.1
0.2
0.3
0.5
1.0
2.0 3.0

MMBT3904WT1

2.0
TJ = +125C
VCE = 1.0 V
MMBT3904WT1
+25C
1.0
0.7
55C
0.5
0.3
0.2
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200

1.0
TJ = 25C
MMBT3904WT1
0.8
IC = 1.0 mA
10 mA
30 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
1.0
1.2
TJ = 25C
MMBT3904WT1
MMBT3904WT1
0.8
VBE @ VCE =1.0 V
0.6
0.4
qVC FOR VCE(sat)

0
55C TO +25C
0.5
55C TO +25C
1.0
+25C TO +125C
qVB FOR VBE(sat)
1.5
0.2
0
+25C TO +125C
0.5
COEFFICIENT (mV/ C)
V, VOLTAGE (VOLTS)
1.0
1.0
2.0
5.0
10
20
50
100
200
2.0
20
40
60
80
100
120
140
160
180 200
2337

MMBT3906WT1
3V
3V
< 1 ns
+ 9.1 V
275
275
< 1 ns
10 k
10 k
0
CS < 4 pF*
+10.6 V
300 ns
10 < t1 < 500 ms

DUTY CYCLE = 2%
DUTY CYCLE = 2%
CS < 4 pF*
1N916
t1
10.9 V



TJ = 25C
TJ = 125C
10
5000
MMBT3906WT1
5.0
MMBT3906WT1
VCC = 40 V
IC/IB = 10
3000
2000
QT
Cobo
Q, CHARGE (pC)
CAPACITANCE (pF)
7.0
Cibo
3.0
2.0
1000
700
500
300
200
QA
100
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
70
50
20 30 40
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
500
500
300
200
IC/IB = 10
MMBT3906WT1
MMBT3906WT1
300
200
VCC = 40 V
IB1 = IB2
IC/IB = 20
TIME (ns)
100
70
50
tr @ VCC = 3.0 V
30
20
10
7
5
15 V
40 V
2.0 V
td @ VOB = 0 V
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100

2338
200
100
70
50
IC/IB = 10
30
20
10
7
5
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200


MMBT3906WT1
IC = 1.0 mA
4.0
12
f = 1.0 kHz

IC = 0.5 mA
3.0

IC = 50 A
2.0

IC = 100 A
1.0
0
0.1
0.2
0.4
IC = 1.0 mA
10
5.0
IC = 0.5 mA
8.0
6.0
4.0
IC = 50 mA
2.0
IC = 100 mA
MMBT3906WT1
1.0 2.0 4.0

10
f, FREQUENCY (kHz)
20
40
MMBT3906WT1
0
0.1
100
0.2
0.4
Figure 25.
1.0 2.0
4.0
10
20
40
100
Figure 26.
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25C)
100
300
MMBT3906WT1
hfe , CURRENT GAIN
200
100
70
50
30
70
MMBT3906WT1
50
30
20
10
7.0
5.0
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
0.1
0.2
10
10
MMBT3906WT1
10
h ie , INPUT IMPEDANCE (k )
5.0 7.0
20
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.5 0.7 1.0

2.0 3.0
0.3
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
10

MMBT3906WT1
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
10

2339

MMBT3906WT1
2.0
TJ = +125C
VCE = 1.0 V
+25C
1.0
0.7
55C
0.5
0.3
MMBT3906WT1
0.2
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0 10
20
30
50
70
100
200
1.0
TJ = 25C
MMBT3906WT1
0.8
IC = 1.0 mA
10 mA
30 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
1.0
TJ = 25C
V, VOLTAGE (VOLTS)
0.8
VBE @ VCE = 1.0 V
0.6
MMBT3906WT1
0.4
0.2
0
1.0
2.0
50
5.0 10
20
2340
100
200
1.0
0.5
qVC FOR VCE(sat)
+25C TO +125C
55C TO +25C
0
0.5
MMBT3906WT1
+25C TO +125C
1.0
qVS FOR VBE(sat)
55C TO +25C
1.5
2.0
20
40
60
80 100 120 140 160
180 200
MOTOROLA

PNP Silicon
MMBT3906LT1
COLLECTOR
3
1
BASE
2
EMITTER
MAXIMUM RATINGS
3
1
Rating
Symbol
Value
Unit
VCEO
40
Vdc
VCBO
40
Vdc
VEBO
5.0
Vdc
IC
200
mAdc
Symbol
Max
Unit

TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
RqJA
556
C/W
PD
300
mW
2.4
mW/C
RqJA
417
C/W
TJ, Tstg
55 to +150

SOT 23 (TO 236AB)
Characteristic

Derate above 25C
DEVICE MARKING
MMBT3906LT1 = 2A

Characteristic
Symbol
Min
Max
40
40
5.0
50
50
Unit
OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO

(IC = 10 mAdc, IE = 0)
V(BR)CBO

(IE = 10 mAdc, IC = 0)
V(BR)EBO
Base Cutoff Current

IBL

ICEX
Vdc
Vdc
Vdc
nAdc
nAdc

1. FR 5 = 1.0
0.75 0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
3. Pulse Width 300 s, Duty Cycle 2.0%.
REV 1
2341
MMBT3906LT1
Characteristic
Symbol
Min
Max
60
80
100
60
30
300
0.25
0.4
0.65
0.85
0.95
250
4.5
10
2.0
12
0.1
10
100
400
3.0
60
4.0
Unit
DC Current Gain
HFE

VCE(sat)

VBE(sat)
Vdc
Vdc

fT
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Cobo
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
Input Impedance
hie

hre

hfe
Output Admittance
hoe
Noise Figure
(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k, f = 1.0 kHz)
NF
MHz
pF
pF
k
X 10 4
mmhos
dB
Delay Time
Rise Time
Storage Time
Fall Time
((VCC = 3.0 Vdc, VBE = 0.5 Vdc,

td
35
tr
35

IB1 = IB2 = 1.0 mAdc)
ts
225
tf
75
ns
ns
3V
3V
< 1 ns
+9.1 V
275
275
< 1 ns
+0.5 V
10 k
10 k
0
CS < 4 pF*
10.6 V
1N916
10 < t1 < 500 ms
300 ns
DUTY CYCLE = 2%
DUTY CYCLE = 2%
t1
CS < 4 pF*
10.9 V

2342

MMBT3906LT1
10
5000
7.0
3000
2000
Cobo
5.0
Q, CHARGE (pC)
CAPACITANCE (pF)
TJ = 25C
TJ = 125C
Cibo
3.0
2.0
VCC = 40 V
IC/IB = 10
1000
700
500
300
200
QT
QA
1.0
0.1
0.2 0.3
0.5 0.7 1.0

2.0 3.0 5.0 7.0 10
100
70
50
20 30 40
1.0
2.0 3.0
5.0 7.0 10
20 30 50 70 100
200
500
500
IC/IB = 10
300
200
VCC = 40 V
IB1 = IB2
300
200
tr @ VCC = 3.0 V
15 V
30
20
TIME (ns)
IC/IB = 20
100
70
50
100
70
50
30
20
IC/IB = 10
40 V
10
7
5
2.0 V
td @ VOB = 0 V
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
10
7
5
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
Figure 6. Fall Time
200
2343
MMBT3906LT1

IC = 1.0 mA
12
f = 1.0 kHz
4.0
IC = 0.5 mA
3.0

IC = 50 A
2.0
IC = 100 A
1.0
0
0.1
0.2
0.4
IC = 1.0 mA
10
5.0
IC = 0.5 mA
8
6
IC = 50 mA
IC = 100 mA
1.0 2.0 4.0

10
f, FREQUENCY (kHz)
20
40
100
0.1
0.2
0.4
1.0 2.0
4.0
10
20
Figure 7.
40
100
Figure 8.
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25C)
100
300
200
100
70
50
70
50
30
20
10
7
30
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
0.1
0.2

10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
2344
5.0 7.0 10
20
0.3
0.2
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
MMBT3906LT1

2.0
TJ = +125C
VCE = 1.0 V
+25C
1.0
0.7
55C
0.5
0.3
0.2
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0 10
20
30
70
50
100
200

1.0
TJ = 25C
0.8
IC = 1.0 mA
10 mA
30 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
TJ = 25C
V, VOLTAGE (VOLTS)
0.8
1.0
VBE @ VCE = 1.0 V
0.6
0.4
0.2
1.0
2.0
50
5.0
10
20
100
200
1.0
0.5
qVC FOR VCE(sat)
+25C TO +125C
55C TO +25C
0.5
+25C TO +125C
1.0
55C TO +25C
qVB FOR VBE(sat)
1.5
2.0
20
40
60
80 100 120 140
160
180 200
2345
MOTOROLA
MMBT4401LT1
NPN Silicon
COLLECTOR
3
1
BASE
3
2
EMITTER
MAXIMUM RATINGS
1
2
Rating
Symbol
Value
Unit
VCEO
40
Vdc
VCBO
60
Vdc
VEBO
6.0
Vdc
IC
600
mAdc
Symbol
Max
Unit

TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
RqJA
556
C/W
PD
300
mW
2.4
mW/C
RqJA
417
C/W
TJ, Tstg
55 to +150

SOT 23 (TO 236AB)
Characteristic

Derate above 25C
DEVICE MARKING
MMBT4401LT1 = 2X

Characteristic
Symbol
Min
Max
40
60
6.0
0.1
0.1
Unit
OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO

(IC = 0.1 mAdc, IE = 0)
V(BR)CBO

(IE = 0.1 mAdc, IC = 0)
V(BR)EBO
Base Cutoff Current

IBEV

ICEX

Vdc
Vdc
Vdc
Adc
Adc
1. FR 5 = 1.0
0.75 0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
2346
MMBT4401LT1
Characteristic
Symbol
Min
Max
20
40
80
100
40
300
0.4
0.75
0.75
0.95
1.2
250
6.5
30
1.0
15
0.1
8.0
40
500
1.0
30
Unit
DC Current Gain
hFE

VCE(sat)

VBE(sat)
Vdc
Vdc

fT
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Ccb
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Ceb
Input Impedance
hie

hre

hfe
Output Admittance
hoe
MHz
pF
pF
k
X 10 4
mmhos
Delay Time
Rise Time
Storage Time
Fall Time
((VCC = 30 Vdc, VEB = 2.0 Vdc,

td
15
tr
20

ts
225
tf
30
ns
ns

+ 30 V
+ 30 V
+16 V
0
2.0 V
1.0 to 100 s,
DUTY CYCLE 2.0%
200
+16 V
1.0 to 100 s,
DUTY CYCLE 2.0%
200
0
1.0 k
< 2.0 ns
CS* < 10 pF
1.0 k
14 V
< 20 ns
CS* < 10 pF
4.0 V
2347
MMBT4401LT1
25C
100C
30
10
7.0
5.0
10
7.0
5.0
QT
2.0
1.0
0.7
0.5
0.3
0.2
Ccb
3.0
2.0
0.1
VCC = 30 V
IC/IB = 10
3.0
Cobo
Q, CHARGE (nC)
CAPACITANCE (pF)
20
QA
0.1
0.2 0.3 0.5
2.0 3.0 5.0

10
1.0
20 30
50
10
200
50 70 100
30
20
100
IC/IB = 10
70
VCC = 30 V
IC/IB = 10
70
tr
50
50
tr @ VCC = 30 V
tr @ VCC = 10 V
td @ VEB = 2.0 V
td @ VEB = 0
30
20
t, TIME (ns)
t, TIME (ns)
500
100
30
tf
20
10
10
7.0
7.0
5.0
5.0
10
20
30
50
70
200
100
300
500
10
20
30
50
70
100
200
Figure 6. Rise and Fall Times
300
300
500
100
ts = ts 1/8 tf
IB1 = IB2
IC/IB = 10 to 20
VCC = 30 V
IB1 = IB2
70
50
200
300
100
70
IC/IB = 20
30
20
IC/IB = 10
10
50
7.0
30
5.0
10
2348
20
30
50
70
100
200
300
500
10
20
30
50
70
100
200
Figure 8. Fall Time
300
500
MMBT4401LT1
NOISE FIGURE
Bandwidth = 1.0 Hz
10
10
IC = 1.0 mA, RS = 150
IC = 500 A, RS = 200
IC = 100 A, RS = 2.0 k
IC = 50 A, RS = 4.0 k
8.0
8.0
f = 1.0 kHz
RS = OPTIMUM
RS = SOURCE
RS = RESISTANCE
6.0
4.0
2.0
IC = 50 A
IC = 100 A
IC = 500 A
IC = 1.0 mA
6.0
4.0
2.0
0
0.01 0.02 0.05 0.1 0.2
0
0.5 1.0 2.0 5.0
10
20
50
100
50
100 200
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 k 100 k
f, FREQUENCY (kHz)
h PARAMETERS
VCE = 10 Vdc, f = 1.0 kHz, TA = 25C
selected from the MMBT4401LT1 lines, and the same units
were used to develop the correspondingly numbered curves
on each graph.
50 k
hfe , CURRENT GAIN
200
100
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
70
50
30
20
0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
300
2.0 k
1.0 k
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
100
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.3
0.5 0.7 1.0
2.0
3.0
10
5.0 k
7.0
5.0
0.2
0.1
10 k
500
5.0 7.0 10
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
20 k
5.0 7.0 10
50
20
10
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
5.0
2.0
1.0
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
2349
MMBT4401LT1
3.0
VCE = 1.0 V
VCE = 10 V
2.0
TJ = 125C
1.0
25C
0.7
0.5
55C
0.3
0.2
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0 10
20
30
50
70
100
200
300
500
1.0
TJ = 25C
0.8
0.6
IC = 1.0 mA
10 mA
100 mA
500 mA
0.4
0.2
0
0.01
0.02 0.03
0.2
0.05 0.07 0.1
0.3
0.5 0.7 1.0

2.0
3.0
5.0 7.0
10
20
30
50
1.0
+ 0.5
TJ = 25C
0.6
VBE @ VCE = 10 V
0.4
0.2
0.5
50
1.0 2.0 5.0 10 20
2350
0.5
1.0
1.5
qVB for VBE
2.0
0
0.1 0.2
qVC for VCE(sat)
0
COEFFICIENT (mV/ C)
VOLTAGE (VOLTS)
0.8
100 200
500
2.5
0.1 0.2
0.5
50
1.0 2.0
5.0 10 20
100 200
500
MOTOROLA
MMBT4403LT1
COLLECTOR
3
PNP Silicon
1
BASE
2
EMITTER
MAXIMUM RATINGS
3
1
Rating
Symbol
Value
Unit
VCEO
40
Vdc
VCBO
40
Vdc
VEBO
5.0
Vdc
IC
600
mAdc
Symbol
Max
Unit

TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
RqJA
556
C/W
PD
300
mW
2.4
mW/C
RqJA
417
C/W
TJ, Tstg
55 to +150

SOT 23 (TO 236AB)
Characteristic

Derate above 25C
DEVICE MARKING
MMBT4403LT1 = 2T

Characteristic
Symbol
Min
Max
40
40
5.0
0.1
0.1
Unit
OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO

(IC = 0.1 mAdc, IE = 0)
V(BR)CBO

(IE = 0.1 mAdc, IC = 0)
V(BR)EBO
Base Cutoff Current

IBEV

ICEX

Vdc
Vdc
Vdc
Adc
Adc
1. FR 5 = 1.0
0.75 0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
300 ms, Duty Cycle
2.0%.
2351
MMBT4403LT1
Characteristic
Symbol
Min
Max
30
60
100
100
20
300
0.4
0.75
0.75
0.95
1.3
200
8.5
30
1.5
15
0.1
8.0
60
500
1.0
100
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 150 mAdc, VCE = 2.0 Vdc)(3)
(IC = 500 mAdc, VCE = 2.0 Vdc)(3)
hFE

VCE(sat)

VBE(sat)
Vdc
Vdc

fT
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Ccb
(VBE = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Ceb
Input Impedance
hie

hre

hfe
Output Admittance
hoe
MHz
pF
pF
k
X 10 4
mmhos
Delay Time
Rise Time
Storage Time
Fall Time
((VCC = 30 Vdc, VEB = 2.0 Vdc,

td
15
tr
20

ts
225
tf
30
ns
ns

30 V
30 V
200
< 2 ns
+2 V
+14 V
0
0
1.0 k
16 V
10 to 100 s,
DUTY CYCLE = 2%
2352
200
< 20 ns
CS* < 10 pF
1.0 k
CS* < 10 pF
16 V
1.0 to 100 s,
DUTY CYCLE = 2%
+ 4.0 V
MMBT4403LT1
25C
100C
30
10
7.0
5.0
VCC = 30 V
IC/IB = 10
Ceb
3.0
Q, CHARGE (nC)
CAPACITANCE (pF)
20
10
7.0
Ccb
5.0
2.0
1.0
0.7
0.5
QT
0.3
QA
0.2
2.0
0.1
0.1
0.2 0.3
20
2.0 3.0 5.0 7.0 10

0.5 0.7 1.0
30
10
20
300
500
100
100
IC/IB = 10
70
70
VCC = 30 V
IC/IB = 10
50
50
tr @ VCC = 30 V
tr @ VCC = 10 V
td @ VBE(off) = 2 V
td @ VBE(off) = 0
30
20
t, TIME (ns)
200
30
50 70 100
30
20
10
10
7.0
7.0
5.0
5.0
10
20
30
50
70
200
100
300
500
10
20
30
50
70
100
200
Figure 6. Rise Time
300
500
200
IC/IB = 10
100
IC/IB = 20
70
50
IB1 = IB2
ts = ts 1/8 tf
30
20
10
20
30
50
70
100
200
300
500
2353
MMBT4403LT1
NOISE FIGURE
Bandwidth = 1.0 Hz
10
10
f = 1 kHz
8
8
IC = 1.0 mA, RS = 430
IC = 500 A, RS = 560
IC = 50 A, RS = 2.7 k
IC = 100 A, RS = 1.6 k
0
0.01 0.02 0.05 0.1 0.2
IC = 50 A
100 A
500 A
1.0 mA
0
0.5 1.0 2.0 5.0
10
20
50
100
50
100
200
500
1k
2k
5k
10 k 20 k
f, FREQUENCY (kHz)
50 k
h PARAMETERS
VCE = 10 Vdc, f = 1.0 kHz, TA = 25C
selected from the MMBT4403LT1 lines, and the same units
were used to develop the correspondinglynumbered curves
on each graph.
100 k
700
50 k
hfe , CURRENT GAIN
500
300
200
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
100
70
50
1000
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
20 k
10 k
5k
2k
1k
500
200
30
0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
100
5.0 7.0 10
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
500
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
5.0
2.0
1.0
0.5
0.2
0.2
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
0.3
10
2354
0.2
20
0.1
0.1
0.1
100
50
20
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
10
5.0
2.0
1.0
0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
MMBT4403LT1
3.0
VCE = 1.0 V
VCE = 10 V
2.0
TJ = 125C
25C
1.0
55C
0.7
0.5
0.3
0.2
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0 10
20
30
70
50
100
200
300
500
1.0
0.8
0.6
IC = 1.0 mA
10 mA
100 mA
500 mA
0.4
0.2
0
0.005
0.01
0.02
0.03
0.05 0.07 0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
5.0
7.0
10
20
30
50
0.5
TJ = 25C
0.8
0.6
COEFFICIENT (mV/ C)
VOLTAGE (VOLTS)
1.0
0.4
0.2
qVC for VCE(sat)
0.5
1.0
1.5
qVS for VBE
2.0
0
0.1 0.2
0.5
50 100 200
1.0 2.0
5.0 10 20
500
2.5
0.1 0.2
0.5
50 100 200
1.0 2.0 5.0 10 20
500
2355
MOTOROLA
MMBT5087LT1
PNP Silicon
COLLECTOR
3
1
BASE
2
EMITTER
1
2

SOT 23 (TO 236AB)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
50
Vdc
VCBO
50
Vdc
EmitterBase Voltage
VEBO
3.0
Vdc
IC
50
mAdc
DEVICE MARKING
MMBT5087LT1 = 2Q
Characteristic
TA = 25C
Derate above 25C
Derate above 25C
Symbol
Max
Unit
PD
225
mW
1.8
mW/C
RJA
556
C/W
PD
300
mW
2.4
mW/C
RJA
417
C/W
TJ, Tstg
55 to +150

Characteristic
Symbol
Min
Max
Unit

(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
50
Vdc

(IC = 100 Adc, IE = 0)
V(BR)CBO
50
Vdc
10
50
OFF CHARACTERISTICS

(VCB = 10 Vdc, IE = 0)
(VCB = 35 Vdc, IE = 0)
ICBO
nAdc
1. FR5 = 1.0 x 0.75 x 0.062 in.

2356
MMBT5087LT1
Characteristic
Symbol
Min
Max
250
250
250
800
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 100 Adc, VCE = 5.0 Vdc)
hFE

VCE(sat)
0.3
Vdc

VBE(sat)
0.85
Vdc
fT
40
MHz
Cobo
4.0
pF

hfe
250
900
Noise Figure
(IC = 20 mAdc, VCE = 5.0 Vdc, RS = 10 k, f = 1.0 kHz)
NF
2.0
2.0
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
dB
2357
MMBT5087LT1
(VCE = 5.0 Vdc, TA = 25C)
10
7.0
IC = 10 A
5.0
1.0
7.0
5.0
BANDWIDTH = 1.0 Hz
RS 0
30 A
3.0
100 A
300 A
1.0 mA
2.0
BANDWIDTH = 1.0 Hz
RS
IC = 1.0 mA
3.0
2.0
300 A
1.0
0.7
0.5
100 A
30 A
0.3
0.2
1.0
10 A
0.1
10
20
50
100 200
500 1.0 k
f, FREQUENCY (Hz)
2.0 k
5.0 k
10
10 k
20
50
100 200
500 1.0 k 2.0 k
f, FREQUENCY (Hz)
5.0 k
10 k
1.0 M
500 k
BANDWIDTH = 1.0 Hz
(VCE = 5.0 Vdc, TA = 25C)
200 k
100 k
50 k
20 k
10 k
0.5 dB
5.0 k
1.0 dB
2.0 k
1.0 k
500
2.0 dB
3.0 dB
200
100
20
30
50 70 100
200 300
BANDWIDTH = 1.0 Hz
200 k
100 k
50 k
20 k
10 k
0.5 dB
5.0 k
1.0 dB
2.0 k
1.0 k
500
2.0 dB
3.0 dB
200
100
5.0 dB
10
1.0 M
500 k
500 700 1.0 k
5.0 dB
10
20
1.0 M
500 k
30
50 70 100
200 300
500 700 1.0 k
10 Hz to 15.7 kHz
200 k
100 k
50 k
20 k
10 k
NF
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
200
100
10
20
30
50 70 100
200 300
en2
4KTRS

5.0 k
2.0 k
1.0 k
500
+ 20 log10
500 700 1.0 k
Figure 5. Wideband
2358
MMBT5087LT1
1.0
100
TA = 25C
0.8
IC = 1.0 mA
0.6
10 mA
50 mA
100 mA
0.4
0.2
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
TA = 25C
PULSE WIDTH = 300 s
80 DUTY CYCLE 2.0%
300 A
150 A
40
100 A
50 A
20
0
5.0 10
20
5.0
10
15
20
25
30
35
TJ = 25C
V, VOLTAGE (VOLTS)
1.2
1.0
0.8
0.6
0.4
0.2
0
0.5 1.0
2.0
5.0
10
20
40
1.4
0.2
250 A
200 A
60
0.1
IB = 400 A
350 A
50
100
1.6
0.8
*qVC for VCE(sat)
25C to 125C
0
55C to 25C
0.8
25C to 125C
1.6
2.4
0.1
qVB for VBE

0.2
55C to 25C
0.5
1.0 2.0
5.0
10 20
50
100
2359
MMBT5087LT1
500
300
200
200
100
70
50
30
tr
20
100
70
50
10
7.0
5.0
1.0
tf
30
20
2.0
3.0
50 70
20 30
5.0 7.0 10
10
1.0
100
2.0 3.0 5.0 7.0 10

20 30
50 70 100
500
10
TJ = 25C
TJ = 25C
7.0
VCE = 20 V
300
Cib
C, CAPACITANCE (pF)
5.0 V
200
100

(NORMALIZED)
VCC = 3.0 V
IC/IB = 10
IB1 = IB2
TJ = 25C
ts
300
t, TIME (ns)
t, TIME (ns)
1000
700
500
VCC = 3.0 V
IC/IB = 10
TJ = 25C
5.0
3.0
2.0
Cob
70
50
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
50
1.0
0.05
0.1
0.2
0.5
1.0
2.0
5.0
1.0
0.7
0.5
10
20
50
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
FIGURE 16
0.05
P(pk)
0.02
0.03
0.02
t1
0.01
0.01
0.01 0.02
SINGLE PULSE
0.05
0.1
0.2
0.5
1.0
t2
2.0
5.0
10
20
50
t, TIME (ms)
100 200

PULSE TRAIN SHOWN
ZJA(t) = r(t) RJA
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 k 100 k
2360
MMBT5087LT1
104
VCC = 30 V
101

Example:
t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)
r(t) is 0.22.
102

T = r(t) x P(pk) x RJA = 0.22 x 2.0 x 200 = 88C.
103
ICEO
102
101
ICBO
AND
100
4
0
2
0
+ 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160

2361
MOTOROLA
MMBT5088LT1
MMBT5089LT1*
COLLECTOR
3
NPN Silicon
1
BASE
2
EMITTER
MAXIMUM RATINGS
3
1
Rating
Symbol
5088LT1
5089LT1
Unit
VCEO
30
25
Vdc
VCBO
35
30
Vdc
VEBO
4.5
Vdc
IC
50
mAdc
Symbol
Max
Unit

TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
RqJA
556
C/W
PD
300
mW
2.4
mW/C
RqJA
417
C/W
TJ, Tstg
55 to +150

SOT 23 (TO 236AB)
Characteristic

Derate above 25C
DEVICE MARKING
MMBT5088LT1 = 1Q; MMBT5089LT1 = 1R

Characteristic
Symbol
Min
Max
30
25
35
30
50
50
50
100
Unit
OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0)
(IC = 100 mAdc, IE = 0)
V(BR)CEO
MMBT5088
MMBT5089
V(BR)CBO
MMBT5088
MMBT5089

(VCB = 20 Vdc, IE = 0)
(VCB = 15 Vdc, IE = 0)
MMBT5088
MMBT5089

(VEB(off) = 3.0 Vdc, IC = 0)
(VEB(off) = 4.5 Vdc, IC = 0)
MMBT5088
MMBT5089
0.062 in.
0.024 in. 99.5% alumina.
Vdc
Vdc
ICBO
nAdc
IEBO
nAdc
1. FR 5 = 1.0
0.75
2. Alumina = 0.4
0.3
2362
MMBT5088LT1 MMBT5089LT1
Characteristic
Symbol
Min
Max
MMBT5088
MMBT5089
300
400
900
1200
MMBT5088
MMBT5089
350
450
MMBT5088
MMBT5089
300
400
0.5
0.8
50
4.0
10
350
450
1400
1800
3.0
2.0
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 100 Adc, VCE = 5.0 Vdc)
hFE

VCE(sat)

VBE(sat)
Vdc
Vdc

fT
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz emitter guarded)
Ccb
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz collector guarded)
Ceb

MHz
pF
pF
hfe
MMBT5088
MMBT5089
Noise Figure
(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 10 k, f = 1.0 kHz)
RS
NF
MMBT5088
MMBT5089
dB
in
en
IDEAL
TRANSISTOR
2363
(VCE = 5.0 Vdc, TA = 25C)
NOISE VOLTAGE
30
30
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
20
RS 0
IC = 10 mA
20
3.0 mA
10
1.0 mA
7.0
5.0
RS 0
f = 10 Hz
10
100 Hz
7.0
10 kHz
1.0 kHz
5.0
300 A
3.0
10
20
50 100 200
3.0
0.01 0.02
500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
f, FREQUENCY (Hz)
IC = 10 mA
3.0 mA
1.0 mA
300 A
100 A
0.3
0.2
RS 0
0.1
10
20
10 A
50 100 200
10
16
3.0
1.0
0.7
0.5
5.0
20
BANDWIDTH = 1.0 Hz
2.0
0.05 0.1 0.2

0.5 1.0
2.0
10
7.0
5.0
100 kHz

12
500 A
8.0
IC = 1.0 mA
100 A
10 A
4.0
30 A
0
10
500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
f, FREQUENCY (Hz)
20
50 100 200 500 1 k 2 k

5 k 10 k 20 k 50 k 100 k

100 Hz NOISE DATA
20
BANDWIDTH = 1.0 Hz
IC = 10 mA
16
100 A
100
70
50
3.0 mA
1.0 mA
30
300 A
20
10
7.0
5.0
30 A
10 A
300
200
IC = 10 mA
3.0 mA
1.0 mA
12
300 A
8.0
100 A
30 A
4.0
10 A
BANDWIDTH = 1.0 Hz
0
3.0
10
20
50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k

2364
10
20
50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k

4.0
3.0
VCE = 5.0 V
2.0
TA = 125C
25C
1.0
55C
0.7
0.5
0.4
0.3
0.2
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
0.4
RVBE, BASEEMITTER
1.0
TJ = 25C
V, VOLTAGE (VOLTS)
0.8
0.6
VBE @ VCE = 5.0 V
0.4
0.2
0.8
1.2
TJ = 25C to 125C
1.6
2.0
55C to 25C
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
50
2.4
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10
100
8.0
C, CAPACITANCE (pF)
6.0
TJ = 25C
Cob
4.0
3.0
Ceb
Cib
Ccb
2.0
1.0
0.8
0.1
0.2
1.0
2.0
5.0
0.5
10
20
50 100
50
100
20
500
300
200
100
VCE = 5.0 V
TJ = 25C
70
50
1.0
2.0
3.0
5.0 7.0 10
20 30
50 70 100
2365
MOTOROLA
MMBT5401LT1
COLLECTOR
3
PNP Silicon
1
BASE
2
EMITTER
3
1
2

SOT 23 (TO 236AB)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
150
Vdc
VCBO
160
Vdc
VEBO
5.0
Vdc
IC
500
mAdc
Symbol
Max
Unit

TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
RqJA
556
C/W
PD
300
mW
2.4
mW/C
RqJA
417
C/W
TJ, Tstg
55 to +150
Characteristic

Derate above 25C
DEVICE MARKING
MMBT5401LT1 = 2L

Characteristic
Symbol
Min
Max
150
160
5.0
50
50
Unit
OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO

(IC = 100 mAdc, IE = 0)
V(BR)CBO

(IE = 10 mAdc, IC = 0)
V(BR)EBO

(VCB = 120 Vdc, IE = 0)
(VCB = 120 Vdc, IE = 0, TA = 100C)
Vdc
Vdc
Vdc
ICES
0.062 in.
0.024 in. 99.5% alumina.
nAdc
Adc
1. FR 5 = 1.0
0.75
2. Alumina = 0.4
0.3
2366
MMBT5401LT1
Characteristic
Symbol
Min
Max
50
60
50
240
0.2
0.5
1.0
1.0
100
300
6.0
40
200
8.0
Unit
ON CHARACTERISTICS
DC Current Gain
hFE

VCE(sat)

VBE(sat)
Vdc
Vdc

Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
fT
Cobo

hfe
Noise Figure
(IC = 200 Adc, VCE = 5.0 Vdc, RS = 10 , f = 1.0 kHz)
NF
MHz
pF
dB
2367
MMBT5401LT1
200
150
h FE, CURRENT GAIN
TJ = 125C
100
25C
70
50
55C
VCE = 1.0 V
VCE = 5.0 V
30
20
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
20
30
50
100
10
20
50
1.0
0.9
0.8
0.7
0.6
IC = 1.0 mA
0.5
10 mA
30 mA
100 mA
0.4
0.3
0.2
0.1
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
103
102
VCE = 30 V
IC = ICES
101
TJ = 125C
100
75C
101
102
REVERSE
25C
103
0.3
0.2
FORWARD
0.1
0
0.1
0.2 0.3 0.4 0.5
0.6
0.7
2368
MMBT5401LT1
1.0
TJ = 25C
0.9
V, VOLTAGE (VOLTS)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.1
0.2 0.3 0.5
1.0 2.0 3.0 5.0

10
20 30
50
2.5
1.5
1.0
0.5
VC for VCE(sat)
0
0.5
1.0
1.5
VB for VBE(sat)
2.0
2.5
0.1
100
TJ = 55C to 135C
2.0
0.2 0.3 0.5 1.0 2.0 3.0 5.0

10
20 30
10.2 V
10 s
INPUT PULSE
tr, tf 10 ns
DUTY CYCLE = 1.0%
0.25 F
3.0 k
RC
Vout
RB
5.1 k
Vin
100
C, CAPACITANCE (pF)
100
70
50
VCC
30 V
100
TJ = 25C
30
Cibo
20
10
7.0
5.0
Cobo
3.0
1N914
2.0
1.0
0.2
0.3
2.0 3.0
5.0 7.0
0.5 0.7 1.0
1000
700
500
10
20
2000
IC/IB = 10
TJ = 25C
tr @ VCC = 120 V
300
1000
700
500
tr @ VCC = 30 V
200
t, TIME (ns)
t, TIME (ns)
100
VBB
+ 8.8 V
Vin
50
100
70
50
10
0.2 0.3 0.5
VCC = 120 V
1.0
2.0 3.0 5.0
10
20 30
50
tf @ VCC = 120 V
tf @ VCC = 30 V
200
ts @ VCC = 120 V
100
70
50
30
20
300
IC/IB = 10
TJ = 25C
30
100
200
20
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
20 30
50
100
200
2369
MOTOROLA
MMBT5550LT1
MMBT5551LT1*
COLLECTOR
3
NPN Silicon
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
140
Vdc
VCBO
160
Vdc
VEBO
6.0
Vdc
IC
600
mAdc
3
1
2

SOT 23 (TO 236AB)
Characteristic
Symbol
Max
Unit

TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
RqJA
556
C/W
PD
300
mW
2.4
mW/C
RqJA
417
C/W
TJ, Tstg
55 to +150

Derate above 25C
DEVICE MARKING
MMBT5550LT1 = M1F; MMBT5551LT1 = G1

Characteristic
Symbol
Min
Max
140
160
160
180
6.0
100
50
100
50
50
Unit
OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0)
(IC = 100 mAdc, IE = 0)
V(BR)CEO
MMBT5550
MMBT5551
V(BR)CBO
MMBT5550
MMBT5551

(IE = 10 mAdc, IC = 0)
(VCB = 100 Vdc, IE = 0)
(VCB = 120 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0, TA = 100C)
(VCB = 120 Vdc, IE = 0, TA = 100C)
Vdc
V(BR)EBO
Vdc
ICBO
MMBT5550
MMBT5551
MMBT5550
MMBT5551

(VEB = 4.0 Vdc, IC = 0)
Vdc
IEBO

nAdc
Adc
nAdc
1. FR 5 = 1.0
0.75 0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
2370
Characteristic
Symbol
Min
Max
MMBT5550
MMBT5551
60
80
MMBT5550
MMBT5551
60
80
250
250
MMBT5550
MMBT5551
20
30

Both Types
0.15
MMBT5550
MMBT5551
0.25
0.20

Both Types
1.0
MMBT5550
MMBT5551
1.2
1.0
Unit
ON CHARACTERISTICS
DC Current Gain
hFE
VCE(sat)
Vdc
VBE(sat)
Vdc
2371
500
300
200
VCE = 1.0 V
VCE = 5.0 V
TJ = 125C
25C
100
55C
50
30
20
10
7.0
5.0
0.1
0.2
0.3
0.5
0.7
1.0
3.0
2.0
5.0
7.0
10
20
30
50
70
100
1.0
0.9
0.8
0.7
0.6
IC = 1.0 mA
10 mA
100 mA
30 mA
0.5
0.4
0.3
0.2
0.1
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
101
1.0
TJ = 25C
100
101
0.8
TJ = 125C
102
IC = ICES
75C
103
REVERSE
FORWARD
25C
104
105
0.4
0.6
0.4
0.2
0
0.3
0.2 0.1
0
0.1
0.2 0.3
0.4
2372
V, VOLTAGE (VOLTS)
VCE = 30 V
0.5
0.6
0.1
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30

50
100
2.5
2.0
TJ = 55C to +135C
1.5
1.0
Vin
tr, tf 10 ns
DUTY CYCLE = 1.0%
2.0
0.2 0.3 0.5 1.0 2.0 3.0 5.0
10 20 30
50
100
RC
RB
Vout
5.1 k
Vin
100
1N914
1000
TJ = 25C
20
200
t, TIME (ns)
300
10
Cibo
7.0
5.0
tr @ VCC = 120 V
tr @ VCC = 30 V
100
Cobo
3.0
IC/IB = 10
TJ = 25C
500
30
50
30
VCC = 120 V
20
2.0
1.0
0.2
3.0 k
100
70
50
0.25 F
10 s
INPUT PULSE
qVB for VBE(sat)
1.5
2.5
0.1
C, CAPACITANCE (pF)
100
0.5
1.0
VCC
30 V
VBB
8.8 V
10.2 V
qVC for VCE(sat)
0.5
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
10
0.2 0.3 0.5
20
20 30
2.0 3.0 5.0 10
1.0
50
100
200
5000
tf @ VCC = 120 V
3000
2000
IC/IB = 10
TJ = 25C
tf @ VCC = 30 V
t, TIME (ns)
1000
500
300
ts @ VCC = 120 V
200
100
50
0.2 0.3 0.5
20 30 50
1.0 2.0 3.0 5.0
10
100
200
2373
MOTOROLA
MMBT6427LT1
NPN Silicon
COLLECTOR 3
BASE
1
EMITTER 2
1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
40
Vdc
VCBO
40
Vdc
VEBO
12
Vdc
IC
500
mAdc
Symbol
Max
Unit

TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
RqJA
556
C/W
PD
300
mW
2.4
mW/C
RqJA
417
C/W
TJ, Tstg
55 to +150

SOT 23 (TO 236AB)
Characteristic

Derate above 25C
DEVICE MARKING
MMBT6427LT1 = 1V

Characteristic
Symbol
Min
Max
40
40
12
1.0
50
50
Unit
OFF CHARACTERISTICS
(IC = 10 mAdc, VBE = 0)
V(BR)CEO

(IC = 100 mAdc, IE = 0)
V(BR)CBO

(IC = 10 mAdc, IC = 0)
V(BR)EBO

(VCE = 25 Vdc, IB = 0)
ICES

(VCB = 30 Vdc, IE = 0)
ICBO

(VEB = 10 Vdc, IC = 0)
IEBO
0.062 in.
0.024 in. 99.5% alumina.
Vdc
Vdc
Vdc
Adc
nAdc
nAdc
1. FR 5 = 1.0
0.75
2. Alumina = 0.4
0.3
2374
MMBT6427LT1
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
hFE
10,000
20,000
14,000
100,000
200,000
140,000
1.2
1.5
2.0
1.75
VCE(sat)(3)

VBE(sat)

VBE(on)
Vdc
Vdc
Vdc

Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo

|hfe|
Noise Figure
(IC = 1.0 mAdc, VCE = 5.0 Vdc, RS = 100 k, f = 1.0 kHz)
NF
pF
7.0
15
1.3
10
pF
Vdc
dB
RS
in
en
IDEAL
TRANSISTOR
2375
MMBT6427LT1
(VCE = 5.0 Vdc, TA = 25C)
500
2.0
BANDWIDTH = 1.0 Hz
RS 0
200
BANDWIDTH = 1.0 Hz
100
10 A
50
100 A
20
IC = 1.0 mA
10
1.0
0.7
0.5
IC = 1.0 mA
0.3
0.2
100 A
0.1
0.07
0.05
10 A
0.03
0.02
10 20
5.0
10 20
50 100 200
500 1 k 2 k 5 k 10 k 20 k
f, FREQUENCY (Hz)
50 k 100 k
50 100 200
50 k 100 k
14
200

12
100
500 1 k 2 k 5 k 10 k 20 k
f, FREQUENCY (Hz)
IC = 10 A
70
50
100 A
30
20
1.0 mA
10
1.0
2.0
10 A
8.0
100 A
6.0
4.0
IC = 1.0 mA
2.0
5.0
10
20
50 100 200
500
2376
10
100
0
0
1.0
2.0
5.0
10
20
50 100 200
500
100
0
MMBT6427LT1
20
4.0
TJ = 25C
C, CAPACITANCE (pF)
10
7.0
Cibo
Cobo
5.0
3.0
2.0
0.04
0.1
0.2
0.4
1.0 2.0 4.0
10
20
2.0
1.0
0.8
0.6
0.4
0.2
0.5
40
200 k
TJ = 125C
25C
30 k
20 k
10 k
7.0 k
5.0 k
55C
VCE = 5.0 V
3.0 k
2.0 k
5.0 7.0
10
20 30
50 70 100
200 300
500
TJ = 25C
V, VOLTAGE (VOLTS)
1.4
1.2
1.0
0.8
0.6
20 30
50 70 100 200 300
0.5 10 20
50
100 200
500
TJ = 25C
2.5
IC = 10 mA
50 mA
250 mA
500 mA
2.0
1.5
1.0
0.5
0.1 0.2
0.5 1.0 2.0 5.0 10 20 50 100 200

500 1000
1.6
10
2.0
3.0
5.0 7.0
1.0
100 k
70 k
50 k
VCE = 5.0 V
f = 100 MHz
TJ = 25C
500
1.0
2.0
25C TO 125C
*RqVC FOR VCE(sat)

55C TO 25C
3.0
25C TO 125C
4.0
qVB FOR VBE

5.0
55C TO 25C
6.0
5.0 7.0 10
20 30
50 70 100
200 300
500
2377

MMBT6427LT1
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
0.05
SINGLE PULSE
0.1
0.07
0.05
SINGLE PULSE
0.03
0.02
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
t, TIME (ms)
100
200
500
1.0 k
2.0 k
5.0 k
10 k
FIGURE A
tP
PP
PP
t1
1/f
DUTY CYCLE
+ t1 f + ttP1
2378
MOTOROLA
MMBT6428LT1
MMBT6429LT1
COLLECTOR
3
NPN Silicon
1
BASE
2
EMITTER
3
1
2
MAXIMUM RATINGS
Rating
Symbol
6428LT1
6429LT1
Unit
VCEO
50
45
Vdc
VCBO
60
55
Vdc
VEBO
6.0
Vdc
IC
200
mAdc
Symbol
Max
Unit

TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
RqJA
556
C/W
PD
300
mW
2.4
mW/C
RqJA
417
C/W
TJ, Tstg
55 to +150

SOT 23 (TO 236AB)
Characteristic

Derate above 25C
DEVICE MARKING
MMBT6428LT1 = 1KM; MMBT6429LT1 = 1L

Characteristic
Symbol
Min
Max
50
45
60
55
0.1
0.01
0.01
Unit
OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0)
(IC = 1.0 mAdc, IB = 0)
MMBT6428
MMBT6429
V(BR)CEO

(IC = 0.1 mAdc, IE = 0)
(IC = 0.1 mAdc, IE = 0)
MMBT6428
MMBT6429
V(BR)CBO

(VCE = 30 Vdc)
ICES

(VCB = 30 Vdc, IE = 0)
ICBO

(VEB = 5.0 Vdc, IC = 0)
IEBO
0.062 in.
0.024 in. 99.5% alumina.
Vdc
Vdc
Adc
Adc
Adc
1. FR 5 = 1.0
0.75
2. Alumina = 0.4
0.3
2379
Characteristic
Symbol
Min
Max
MMBT6428
MMBT6429
250
500
MMBT6428
MMBT6429
250
500
650
1250
MMBT6428
MMBT6429
250
500
MMBT6428
MMBT6429
250
500
0.2
0.6
0.56
0.66
100
700
3.0
8.0
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 0.01 mAdc, VCE = 5.0 Vdc)
hFE

VCE(sat)

VBE(on)
Vdc
Vdc

(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
fT
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
RS
MHz
pF
pF
in
en
IDEAL
TRANSISTOR
2380
(VCE = 5.0 Vdc, TA = 25C)
NOISE VOLTAGE
30
30
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
20
RS 0
IC = 10 mA
20
3.0 mA
10
1.0 mA
7.0
5.0
RS 0
f = 10 Hz
10
100 Hz
7.0
10 kHz
1.0 kHz
5.0
300 A
3.0
10
20
50 100 200
3.0
0.01 0.02
500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
f, FREQUENCY (Hz)
IC = 10 mA
3.0 mA
1.0 mA
300 A
100 A
0.3
0.2
RS 0
0.1
10
20
10 A
50 100 200
10
16
3.0
1.0
0.7
0.5
5.0
20
BANDWIDTH = 1.0 Hz
2.0
0.05 0.1 0.2

0.5 1.0
2.0
10
7.0
5.0
100 kHz

12
500 A
8.0
IC = 1.0 mA
100 A
10 A
4.0
30 A
0
10
500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
f, FREQUENCY (Hz)
20
50 100 200 500 1 k 2 k

5 k 10 k 20 k 50 k 100 k

100 Hz NOISE DATA
20
BANDWIDTH = 1.0 Hz
IC = 10 mA
16
100 A
100
70
50
3.0 mA
1.0 mA
30
300 A
20
10
7.0
5.0
30 A
10 A
300
200
IC = 10 mA
3.0 mA
1.0 mA
12
300 A
8.0
100 A
30 A
4.0
10 A
BANDWIDTH = 1.0 Hz
0
3.0
10
20
50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k

10
20
50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k

2381
4.0
3.0
VCE = 5.0 V
2.0
TA = 125C
25C
1.0
55C
0.7
0.5
0.4
0.3
0.2
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
0.4
RVBE, BASEEMITTER
1.0
TJ = 25C
V, VOLTAGE (VOLTS)
0.8
0.6
VBE @ VCE = 5.0 V
0.4
0.2
0.8
1.2
TJ = 25C to 125C
1.6
2.0
55C to 25C
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
50
2.4
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10
100
8.0
C, CAPACITANCE (pF)
6.0
TJ = 25C
Cob
4.0
3.0
Ceb
Cib
Ccb
2.0
1.0
0.8
0.1
0.2
1.0
2.0
5.0
0.5
10
20
2382
50 100
50
100
20
500
300
200
100
VCE = 5.0 V
TJ = 25C
70
50
1.0
2.0
3.0
5.0 7.0 10
20 30
50 70 100
MOTOROLA
MMBT6517LT1
NPN Silicon
COLLECTOR
3
1
BASE
3
2
EMITTER
MAXIMUM RATINGS
1
2
Rating
Symbol
Value
Unit
VCEO
350
Vdc
VCBO
350
Vdc
VEBO
5.0
Vdc
Base Current
IB
250
mAdc
IC
500
mAdc

SOT 23 (TO 236AB)
Characteristic
Symbol
Max
Unit

TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
RqJA
556
C/W
PD
300
mW
2.4
mW/C
RqJA
417
C/W
TJ, Tstg
55 to +150

Derate above 25C
DEVICE MARKING
MMBT6517LT1 = 1Z

Characteristic
Symbol
Min
Max
350
350
6.0
50
50
Unit
OFF CHARACTERISTICS
(IC = 1.0 mAdc)
V(BR)CEO

(IC = 100 mAdc)
V(BR)CBO

(IE = 10 mAdc)
V(BR)EBO

(VCB = 250 Vdc)
ICBO

(VEB = 5.0 Vdc)
IEBO
0.062 in.
0.024 in. 99.5% alumina.
Vdc
Vdc
Vdc
nAdc
nAdc
1. FR 5 = 1.0
0.75
2. Alumina = 0.4
0.3
2383
MMBT6517LT1
Characteristic
Symbol
Min
Max
20
30
30
20
15
200
200
0.30
0.35
0.50
1.0
0.75
0.85
0.90
2.0
40
200
6.0
80
Unit
ON CHARACTERISTICS
DC Current Gain
hFE

VCE(sat)

VBE(sat)

VBE(on)
Vdc
Vdc
Vdc

fT
(VCB = 20 Vdc, f = 1.0 MHz)
Ccb
(VEB = 0.5 Vdc, f = 1.0 MHz)
Ceb
MHz
pF
pF
2384
200
VCE = 10 V
TJ = 125C
100
25C
70
50
55C
30
20
10
1.0
2.0
3.0
5.0 7.0 10
20 30
50 70 100
MMBT6517LT1
100
70
50
TJ = 25C
VCE = 20 V
f = 20 MHz
30
20
10
1.0
V, VOLTAGE (VOLTS)
1.0
0.6
2.5
IC
IB
2.0
50 70
100
1.5
+ 10
25C to 125C
1.0
0.5
RVC for VCE(sat)
55C to 25C
0.5
0.4
1.0
55C to 125C
1.5
0.2
0
1.0
TJ = 25C
0.8
3.0
5.0 7.0 10
20 30
1.4
1.2
2.0
2.0

3.0
5.0 7.0 10
20 30
50 70 100
RVB for VBE
2.0
2.5
1.0
3.0
5.0 7.0 10
20 30
50
70
100
100
70
50
C, CAPACITANCE (pF)
2.0
TJ = 25C
Ceb
30
20
10
7.0
5.0
Ccb
3.0
2.0
1.0
0.2
0.5
1.0 2.0
5.0
10
20
50 100 200
2385
MMBT6517LT1
1.0 k
700
500
10 k
7.0 k
5.0 k
VCE(off) = 100 V
IC/IB = 5.0
TJ = 25C
300
2.0 k
t, TIME (ns)
200
t, TIME (ns)
ts
3.0 k
tr
100
70
50
1.0 k
700
500
30
300
20
200
10
1.0
2.0
3.0
5.0 7.0 10
20 30
50
100
1.0
70 100
VCE(off) = 100 V
IC/IB = 5.0
IB1 = IB2
TJ = 25C
tf
2.0 3.0
5.0 7.0 10
20 30
50
70 100
+VCC
VCC ADJUSTED
+10.8 V
2.2 k
20 k
50 SAMPLING SCOPE
1.0 k
50
1/2MSD7000
9.2 V
PULSE WIDTH 100 s
tr, tf 5.0 ns
DUTY CYCLE 1.0%
APPROXIMATELY
1.35 V
1.0
0.7
0.5
0.3
D = 0.5
0.2
0.2
0.1
0.1
0.07
0.05
SINGLE PULSE
0.05
SINGLE PULSE
0.03
0.02
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
t, TIME (ms)
100
200
500
1.0 k
2.0 k
5.0 k
10 k
2386
MMBT6517LT1
FIGURE A
tP
PP
PP
t1
1/f
DUTY CYCLE
+ t1 f + ttP1
2387
MOTOROLA
MMBT6520LT1
PNP Silicon
COLLECTOR
3
1
BASE
3
2
EMITTER
1
2

SOT 23 (TO 236AB)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
350
Vdc
VCBO
350
Vdc
EmitterBase Voltage
VEBO
5.0
Vdc
Base Current
IB
250
mA
IC
500
mAdc
DEVICE MARKING
MMBT6520LT1 = 2Z
Characteristic
TA = 25C
Derate above 25C
Derate above 25C
Symbol
Max
Unit
PD
225
mW
1.8
mW/C
RJA
556
C/W
PD
300
mW
2.4
mW/C
RJA
417
C/W
TJ, Tstg
55 to +150

Characteristic
Symbol
Min
Max
Unit
CollectorEmitter Breakdown Voltage (IC = 1.0 mA)
V(BR)CEO
350
Vdc
CollectorBase Breakdown Voltage (IC = 100 A)
V(BR)CBO
350
Vdc
EmitterBase Breakdown Voltage (IE = 10 A)
V(BR)EBO
5.0
Vdc
ICBO
50
nA
Emitter Cutoff Current (VEB = 4.0 V)
IEBO
50
nA
OFF CHARACTERISTICS
1. FR5 = 1.0 x 0.75 x 0.062 in.

2388
MMBT6520LT1
Characteristic
Symbol
Min
Max
20
30
30
20
15
200
200
0.30
0.35
0.50
1.0
0.75
0.85
0.90
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 mA, VCE = 10 V)
(IC = 10 mA, VCE = 10 V)
(IC = 30 mA, VCE = 10 V)
(IC = 50 mA, VCE = 10 V)
(IC = 100 mA, VCE = 10 V)
hFE

(IC = 10 mA, IB = 1.0 mA)
(IC = 20 mA, IB = 2.0 mA)
(IC = 30 mA, IB = 3.0 mA)
(IC = 50 mA, IB = 5.0 mA)
VCE(sat)
Vdc

(IC = 10 mA, IB = 1.0 mA)
(IC = 20 mA, IB = 2.0 mA)
(IC = 30 mA, IB = 3.0 mA)
VBE(sat)
(IC = 100 mA, VCE = 10 V)
VBE(on)
2.0
Vdc
fT
40
200
MHz
(VCB= 20 V, f = 1.0 MHz)
Ccb
6.0
pF
(VEB= 0.5 V, f = 1.0 MHz)
Ceb
100
pF
Vdc
(IC = 10 mA, VCE = 20 V, f = 20 MHz)
2389
200
VCE = 10 V
TJ = 125C
100
25C
70
55C
50
30
20
1.0
2.0
3.0
5.0 7.0 10
20 30
50
70 100
MMBT6520LT1
100
70
50
20
10
1.0
1.4
TJ = 25C
V, VOLTAGE (VOLTS)
1.0
0.8
0.6
2.5
1.5
100
+ 10
25C to 125C
1.0
0.5
0
1.5
2.0

3.0
5.0 7.0 10
20 30
50 70 100
100
70
50
2.0
2.5
1.0
RVC for VCE(sat)

55C to 25C
2.0
1.0 k
700
500
TJ = 25C
Ceb
30
55C to 125C
RVB for VBE
3.0
5.0 7.0 10
20 30
50
70
100
300
VCE(off) = 100 V
IC/IB = 5.0
TJ = 25C
200
20
t, TIME (ns)
C, CAPACITANCE (pF)
IC
IB
2.0
10
7.0
5.0
Ccb
tr
100
70
50
3.0
30
2.0
20
0.5
1.0 2.0
5.0
10
20
2390
50 70
1.0
0.2
1.0
0.2
3.0
5.0 7.0 10
20 30
0.5
0.4
0
1.0
2.0
1.2
TJ = 25C
VCE = 20 V
f = 20 MHz
30
50 100 200
10
1.0
2.0
3.0
5.0 7.0 10
20 30
50
70 100
MMBT6520LT1
10 k
7.0 k
5.0 k
ts
3.0 k
t, TIME (ns)
2.0 k
1.0 k
700
500
VCE(off) = 100 V
IC/IB = 5.0
IB1 = IB2
TJ = 25C
tf
300
200
100
1.0
2.0 3.0
5.0 7.0 10
20 30
50
70 100
+VCC
VCC ADJUSTED
+10.8 V
2.2 k
20 k
50 SAMPLING SCOPE
1.0 k
50
1/2MSD7000
9.2 V
PULSE WIDTH 100 s
tr, tf 5.0 ns
DUTY CYCLE 1.0%
APPROXIMATELY
1.35 V

1.0
0.7
0.5
0.3
D = 0.5
0.2
0.2
0.1
0.1
0.07
0.05
SINGLE PULSE
0.05
SINGLE PULSE
0.03
0.02
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
t, TIME (ms)
100
200
500
1.0 k
2.0 k
5.0 k
10 k
2391
MMBT6520LT1
FIGURE A
tP
PP
PP
t1
1/f
DUTY CYCLE
+ t1 f + ttP1
2392
MOTOROLA
MMBTA05LT1
MMBTA06LT1*
Driver Transistors
NPN Silicon
COLLECTOR
3
1
BASE
3
2
EMITTER
1
2
MAXIMUM RATINGS
Rating
Symbol
MMBTA05
MMBTA06
Unit
VCEO
60
80
Vdc
VCBO
60
80
Vdc
VEBO
4.0
Vdc
IC
500
mAdc

SOT 23 (TO 236AB)
Characteristic
Symbol
Max
Unit

TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
RqJA
556
C/W
PD
300
mW
2.4
mW/C
RqJA
417
C/W
TJ, Tstg
55 to +150

Derate above 25C
DEVICE MARKING
MMBTA05LT1 = 1H; MMBTA06LT1 = 1GM

Characteristic
Symbol
Min
Max
Unit
60
80
V(BR)EBO
4.0
Vdc
ICES
0.1
mAdc
0.1
0.1
OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
MMBTA05
MMBTA06

(IE = 100 mAdc, IC = 0)
(VCE = 60 Vdc, IB = 0)
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)

Vdc
mAdc
ICBO
MMBTA05
MMBTA06
1. FR 5 = 1.0
0.75 0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
300 ms, Duty Cycle
2.0%.
2393
MMBTA05LT1 MMBTA06LT1
Characteristic
Symbol
Min
Max
100
100
Unit
ON CHARACTERISTICS
DC Current Gain
hFE

VCE(sat)
0.25
Vdc

VBE(on)
1.2
Vdc
fT
100
MHz

(IC = 10 mA, VCE = 2.0 V, f = 100 MHz)
2394
MOTOROLA
MMBTA13LT1
MMBTA14LT1*
Darlington Amplifier Transistors

NPN Silicon
COLLECTOR 3
BASE
1
3
1
EMITTER 2

SOT 23 (TO 236AB)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCES
30
Vdc
VCBO
30
Vdc
VEBO
10
Vdc
IC
300
mAdc
Symbol
Max
Unit

TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
RqJA
556
C/W
PD
300
mW
2.4
mW/C
RqJA
417
C/W
TJ, Tstg
55 to +150
Characteristic

Derate above 25C
DEVICE MARKING
MMBTA13LT1 = 1M; MMBTA14LT1 = 1N

Characteristic
Symbol
Min
Max
Unit
V(BR)CES
30
Vdc

(VCB = 30 Vdc, IE = 0)
ICBO
100
nAdc

(VEB = 10 Vdc, IC = 0)
IEBO
100
nAdc
OFF CHARACTERISTICS
(IC = 100 mAdc, VBE = 0)
0.062 in.
0.024 in. 99.5% alumina.
1. FR 5 = 1.0
0.75
2. Alumina = 0.4
0.3
2395
Characteristic
Symbol
Min
Max
Unit
MMBTA13
MMBTA14
5000
10,000
MMBTA13
MMBTA14
10,000
20,000
VCE(sat)
1.5
Vdc
VBE
2.0
Vdc
fT
125
MHz
DC Current Gain
hFE


RS
in
en
IDEAL
TRANSISTOR
2396
(VCE = 5.0 Vdc, TA = 25C)
500
2.0
BANDWIDTH = 1.0 Hz
RS 0
200
BANDWIDTH = 1.0 Hz
100
10 A
50
100 A
20
IC = 1.0 mA
10
1.0
0.7
0.5
IC = 1.0 mA
0.3
0.2
100 A
0.1
0.07
0.05
10 A
0.03
0.02
10 20
5.0
10 20
50 100 200
500 1 k 2 k 5 k 10 k 20 k
f, FREQUENCY (Hz)
50 k 100 k
50 100 200
50 k 100 k
200
14
12
100
500 1 k 2 k 5 k 10 k 20 k
f, FREQUENCY (Hz)
IC = 10 A
70
50
100 A
30
20
1.0 mA
10
1.0
2.0
10
10 A
8.0
100 A
6.0
4.0
IC = 1.0 mA
2.0
5.0
10
20
50 100 200
500
100
0
0
1.0
2.0
5.0
10
20
50 100 200
500
100
0
2397
20
4.0
TJ = 25C
C, CAPACITANCE (pF)
10
7.0
Cibo
Cobo
5.0
3.0
2.0
0.04
0.1
0.2
0.4
1.0 2.0 4.0
10
20
2.0
1.0
0.8
0.6
0.4
0.2
0.5
40
200 k
TJ = 125C
25C
30 k
20 k
10 k
7.0 k
5.0 k
55C
VCE = 5.0 V
3.0 k
2.0 k
5.0 7.0
10
20 30
50 70 100
200 300
500
TJ = 25C
V, VOLTAGE (VOLTS)
1.4
1.2
1.0
0.8
0.6
20 30
50 70 100 200 300
2398
0.5 10 20
50
100 200
500
TJ = 25C
2.5
IC = 10 mA
50 mA
250 mA
500 mA
2.0
1.5
1.0
0.5
0.1 0.2
0.5 1.0 2.0 5.0 10 20 50 100 200

500 1000
1.6
10
2.0
3.0
5.0 7.0
1.0
100 k
70 k
50 k
VCE = 5.0 V
f = 100 MHz
TJ = 25C
500
1.0
2.0
25C TO 125C
*RqVC FOR VCE(sat)

55C TO 25C
3.0
25C TO 125C
4.0
qVB FOR VBE

5.0
55C TO 25C
6.0
5.0 7.0 10
20 30
50 70 100
200 300
500

1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
0.05
SINGLE PULSE
0.1
0.07
0.05
SINGLE PULSE
0.03
0.02
0.01
0.1
0.2
0.5
1.0
2.0
10
5.0
20
50
t, TIME (ms)
100
200
500
1.0 k
2.0 k
5.0 k
10 k
1.0 k
700
500
300
200
FIGURE A
1.0 ms
tP
TA = 25C
TC = 25C
100 s
PP
1.0 s
100
70
50
PP
t1
30
CURRENT LIMIT
THERMAL LIMIT
20
10
0.4 0.6
1/f
DUTY CYCLE
1.0
2.0
4.0 6.0
10
20
40
+ t1 f + ttP1
2399
MOTOROLA
General Purpose Amplifier

NPN Silicon
MMBTA20LT1
COLLECTOR
3
1
BASE
3
1
2
EMITTER

SOT 23 (TO 236AB)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
40
Vdc
VEBO
4.0
Vdc
IC
100
mAdc
Symbol
Max
Unit

TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
RqJA
556
C/W
PD
300
mW
2.4
mW/C
RqJA
417
C/W
TJ, Tstg
55 to +150
Characteristic

Derate above 25C
DEVICE MARKING
MMBTA20LT1 = 1C

Characteristic
Symbol
Min
Max
Unit

(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
Vdc

(IE = 100 mAdc, IC = 0)
V(BR)EBO
4.0
Vdc
ICBO
100
nAdc
OFF CHARACTERISTICS

(VCB = 30 Vdc, IE = 0)
0.062 in.
0.024 in. 99.5% alumina.
1. FR 5 = 1.0
0.75
2. Alumina = 0.4
0.3
2400
MMBTA20LT1
Characteristic
Symbol
Min
Max
Unit
hFE
40
400
VCE(sat)
0.25
Vdc
fT
125
MHz
Cobo
4.0
pF
ON CHARACTERISTICS
DC Current Gain

Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

+ 3.0 V
300 ns
DUTY CYCLE = 2%
275
+10.9 V
+ 3.0 V
10 < t1 < 500 s

DUTY CYCLE = 2%
t1
+10.9 V
10 k
0.5 V
<1.0 ns
275
10 k
0
CS < 4.0 pF*
9.1 V
< 1.0 ns
1N916
CS < 4.0 pF*
2401
MMBTA20LT1
(VCE = 5.0 Vdc, TA = 25C)
20
100
BANDWIDTH = 1.0 Hz
RS = 0
50
300 A
10
IC = 1.0 mA
100 A
7.0
5.0
10 A
3.0
20
300 A
100 A
10
5.0
2.0
1.0
30 A
0.5
30 A
BANDWIDTH = 1.0 Hz
RS
IC = 1.0 mA
10 A
0.2
2.0
0.1
10
20
50
100 200
500 1 k
f, FREQUENCY (Hz)
2k
5k
10 k
10
20
50
100 200
500 1 k
f, FREQUENCY (Hz)
2k
5k
10 k

(VCE = 5.0 Vdc, TA = 25C)
BANDWIDTH = 1.0 Hz
200 k
100 k
50 k
500 k
20 k
10 k
5k
2.0 dB
2k
1k
500
3.0 dB 4.0 dB
6.0 dB
10 dB
200
100
50
1M
500 k
BANDWIDTH = 1.0 Hz
200 k
100 k
50 k
20 k
10 k
1.0 dB
5k
2.0 dB
2k
1k
500
5.0 dB
200
100
10
20
30
50 70 100
200 300
500 700
1k
8.0 dB
10
20
500 k
3.0 dB
30
50 70 100
200 300
500 700
1k
10 Hz to 15.7 kHz
200 k
100 k
50 k
20 k
10 k
5k
NF
1.0 dB
2k
1k
500
3.0 dB
5.0 dB
8.0 dB
10
20
30
50 70 100
200 300
500 700
en2
4KTRS

2.0 dB
200
100
50
+ 20 log10
1k
Figure 7. Wideband
2402
MMBTA20LT1
400
TJ = 125C
25C
200
55C
100
80
MPS390
VCE
4 = 1.0 V
VCE = 10 V
60
40
0.004 0.006 0.01
0.02 0.03
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
20
30
50
70 100
100
1.0
MPS3904
TJ = 25C
0.8
IC = 1.0 mA
0.6
10 mA
50 mA
100 mA
0.4
0.2
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
TA = 25C
PULSE WIDTH = 300 s
80 DUTY CYCLE 2.0%
300 A
200 A
40
100 A
20
0
5.0 10
20
5.0
10
15
20
25
30
35
TJ = 25C
V, VOLTAGE (VOLTS)
1.2
1.0
0.6
0.4
0.2
0
0.2
2.0
5.0
10
20
0.5 1.0
40
1.4
0.1
400 A
60
0.8
IB = 500 A
50
100
1.6
0.8
25C to 125C
0
*qVC for VCE(sat)

55C to 25C
0.8
25C to 125C
1.6
qVB for VBE

2.4
0.1
0.2
55C to 25C
0.5
1.0 2.0
5.0 10 20
50
100
2403
MMBTA20LT1
1000
VCC = 3.0 V
IC/IB = 10
TJ = 25C
100
70
50
700
500
ts
300
200
t, TIME (ns)
t, TIME (ns)
300
200
tr
30
20
10
7.0
5.0
100
70
50
tf
30
VCC = 3.0 V
IC/IB = 10
IB1 = IB2
TJ = 25C
20
3.0
1.0
2.0
50 70
20 30
5.0 7.0 10
3.0
10
1.0
100
2.0
3.0
500
70 100
10
TJ = 25C
f = 100 MHz
TJ = 25C
f = 1.0 MHz
7.0
300
VCE = 20 V
200
5.0 V
100
Cib
5.0
Cob
3.0
2.0
70
50
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
1.0
0.05
50
0.2
0.5
1.0
2.0
5.0
VCE = 10 Vdc
f = 1.0 kHz
TA = 25C
3.0
2.0
1.0
0.7
0.5
0.3
MPS3904
hfe 200 @ IC = 1.0 mA
7.0
5.0
0.2
0.1
10
20
50
200
10
100
70
50
VCE = 10 Vdc
f = 1.0 kHz
TA = 25C
MPS3904
hfe 200 @ IC = 1.0 mA
30
20
10
7.0
5.0
3.0
0.2
0.5
20
1.0 2.0
5.0
10
2404
0.1
20
50
C, CAPACITANCE (pF)
20 30
5.0 7.0 10
50
100
2.0
0.1
0.2
0.5
20
1.0 2.0
5.0
10
50
100

(NORMALIZED)
MMBTA20LT1
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
FIGURE 19A
0.05
P(pk)
0.02
0.03
0.02
t1
0.01
0.01
0.01 0.02
SINGLE PULSE
0.05
0.1
0.2
0.5
t2
1.0
2.0
5.0
10
20
50
t, TIME (ms)
100 200

PULSE TRAIN SHOWN
ZJA(t) = r(t) RJA
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 k 100 k
104
VCC = 30 Vdc

103
102
ICEO
101
Example:
conditions:
t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2)
r(t) is 0.22.
ICBO
AND
100
101
102
4
0
2
0
+ 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160


T = r(t) x P(pk) x RJA = 0.22 x 2.0 x 200 = 88C.
Figure 19A.
400
1.0 ms
200
100
60
40
TC = 25C
dc
dc
TJ = 150C
10
CURRENT LIMIT
THERMAL LIMIT
6.0
2.0

applicable curve.
10 s
1.0 s
TA = 25C
20
4.0
100 s
4.0
6.0 8.0 10
20
40
Figure 20.
2405
MOTOROLA

NPN Silicon
MMBTA42LT1*
MMBTA43LT1
COLLECTOR
3
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
MMBTA42
MMBTA43
Unit
VCEO
300
200
Vdc
VCBO
300
200
Vdc
VEBO
6.0
6.0
Vdc
IC
500
3
1
2

SOT 23 (TO 236AB)
mAdc
DEVICE MARKING
MMBTA42LT1 = 1D; MMBTA43LT1 = M1E
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR5 Board,(1)

TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
RqJA
556
C/W
PD
300
mW
2.4
mW/C
RqJA
417
C/W
TJ, Tstg
55 to +150

Derate above 25C

Characteristic
Symbol
Min
Max
300
200
300
200
6.0
0.1
0.1
0.1
0.1
Unit
OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0)
(IC = 100 mAdc, IE = 0)
V(BR)CEO
MMBTA42
MMBTA43
Vdc
V(BR)CBO
MMBTA42
MMBTA43

(IE = 100 mAdc, IC = 0)
V(BR)EBO

(VCB = 200 Vdc, IE = 0)
(VCB = 160 Vdc, IE = 0)
MMBTA42
MMBTA43

(VEB = 6.0 Vdc, IC = 0)
(VEB = 4.0 Vdc, IC = 0)
MMBTA42
MMBTA43
Vdc
Vdc
Adc
ICBO
Adc
IEBO
1. FR5 = 1.0 x 0.75 x 0.062 in.

2406
Characteristic
Symbol
Min
Max
Unit
Both Types
Both Types
25
40
MMBTA42
MMBTA43
40
40
0.5
0.5
VBE(sat)
0.9
Vdc
fT
50
MHz
3.0
4.0
DC Current Gain
hFE
VCE(sat)
MMBTA42
MMBTA43

Vdc

(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
Ccb
MMBTA42
MMBTA43
pF
2407
200
VCE = 10 Vdc
TJ = +125C
100
25C
50
55C
30
20
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
100
C, CAPACITANCE (pF)
50
Ceb
20
10
5.0
Ccb
2.0
1.0
0.2
0.5
1.0 2.0
5.0 10
20
50
100
200
100
70
50
TJ = 25C
VCE = 20 V
f = 20 MHz
30
20
10
1.0
2.0
3.0
5.0 7.0 10
20 30
50
70 100
1.4
TJ = 25C
V, VOLTAGE (VOLTS)
1.2
1.0
0.8
0.6
0.4
5.0
0.2
0
1.0
2.0
3.0
5.0 7.0 10
20 30
50
70 100
2408
MOTOROLA
Driver Transistors
MMBTA55LT1
MMBTA56LT1*
COLLECTOR
3
PNP Silicon
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
MMBTA55
MMBTA56
Unit
VCEO
VCBO
60
80
Vdc
60
80
Vdc

VEBO
IC
3
1
2
4.0
Vdc
500
mAdc

SOT 23 (TO 236AB)
DEVICE MARKING
MMBTA55LT1 = 2H; MMBTA56LT1 = 2GM
Symbol
Max
Unit

TA = 25C
Derate above 25C
Characteristic
PD
225
mW
1.8
mW/C
RqJA
556
C/W
PD
300
mW
2.4
mW/C
417
C/W
55 to +150

Derate above 25C
RqJA
TJ, Tstg


Characteristic
Symbol
Min
Max
Unit
V(BR)CEO
60
80
Vdc
V(BR)EBO
4.0
Vdc
ICES
0.1
Adc
ICBO
0.1
0.1
Adc
OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0)
MMBTA55
MMBTA56

Collector Cutoff Current (VCE = 60 Vdc, IB = 0)
MMBTA55
MMBTA56
ON CHARACTERISTICS
DC Current Gain (IC = 10 mAdc, VCE = 1.0 Vdc)
DC Current Gain (IC = 100 mAdc, VCE = 1.0 Vdc)
hFE
100
100
VCE(sat)
0.25
Vdc
BaseEmitter On Voltage (IC = 100 mAdc, VCE = 1.0 Vdc)
VBE(on)
1.2
Vdc
fT
50
MHz

1.
2.
3.
4.
FR5 = 1.0 x 0.75 x 0.062 in.

Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
fT is defined as the frequency at which |hfe| extrapolates to unity.
2409
MOTOROLA
PNP Silicon
MMBTA63LT1
MMBTA64LT1*
COLLECTOR 3
BASE
1
EMITTER 2
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCES
30
Vdc
VCBO
30
Vdc
VEBO
10
Vdc
IC
500
mAdc
1
2

SOT 23 (TO 236AB)
DEVICE MARKING
MMBTA63LT1 = 2U; MMBTA64LT1 = 2V
Characteristic
Symbol
Max
Unit

TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
RqJA
556
C/W
PD
300
mW
2.4
mW/C
RqJA
417
C/W
TJ, Tstg
55 to +150

Derate above 25C

Characteristic
Symbol
Min
Max
Unit
V(BR)CEO
30
Vdc
Collector Cutoff Current (VCB = 30 Vdc)
ICBO
100
nAdc
Emitter Cutoff Current (VEB = 10 Vdc)
IEBO
100
nAdc
5,000
10,000
10,000
20,000
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 100 Adc)
ON CHARACTERISTICS
DC Current Gain(3)
hFE
MMBTA63
MMBTA64
MMBTA63
MMBTA64
VCE(sat)
1.5
Vdc
BaseEmitter On Voltage (IC = 100 mAdc, VCE = 5.0 Vdc)
VBE(on)
2.0
Vdc
fT
125
MHz

Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
1. FR5 = 1.0 x 0.75 x 0.062 in.
2410
hFE , DC CURRENT GAIN (X1.0 K)
200
TA = 125C
100
70
50
10 V
30
25C
VCE = 2.0 V
5.0 V
20
10
7.0
5.0
55C
3.0
2.0
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
300
2.0
TA = 25C
V, VOLTAGE (VOLTS)
1.6
1.2
0.8

IC/IB = 100
0.4
0
0.3 0.5
1.0
2 3 5
10 20 30 50
100 200 300
2.0
TA = 25C
1.8
1.6
1.4
IC = 10 mA 50 mA 100 mA 175 mA
300 mA
1.2
1.0
0.8
0.6
0.10.2 0.5 1 2
5 10 20 50 100200500 1K2K 5K10K

10
4.0
3.0
2.0
VCE = 5.0 V
f = 100 MHz
TA = 25C
1.0
0.4
0.2
0.1
1.0 2.0
5.0
10
20
50
100 200
500
1K
2411
MOTOROLA

PNP Silicon
MMBTA70LT1
COLLECTOR
3
1
BASE
2
EMITTER
MAXIMUM RATINGS
3
1
Rating
Symbol
Value
Unit
VCEO
40
Vdc
EmitterBase Voltage
VEBO
4.0
Vdc
IC
100
mAdc

SOT 23 (TO 236AB)
DEVICE MARKING
MMBTA70LT1 = M2C
Characteristic
Total Device Dissipation FR-5 Board,(1)
TA = 25C
Derate above 25C
Derate above 25C
Symbol
Max
Unit
PD
225
mW
1.8
mW/C
RJA
556
C/W
PD
300
mW
2.4
mW/C
RJA
417
C/W
TJ, Tstg
55 to +150

Characteristic
Symbol
Min
Max
Unit

(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
Vdc

(IE = 100 Adc, IC = 0)
V(BR)EBO
4.0
Vdc
ICBO
100
nAdc
DC Current Gain
hFE
40
400

VCE(sat)
0.25
Vdc
fT
125
MHz
Cobo
4.0
pF
OFF CHARACTERISTICS

(VCB = 30 Vdc, IE = 0)
ON CHARACTERISTICS
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
1. FR5 = 1.0 x 0.75 x 0.062 in.
2412
MMBTA70LT1
(VCE = 5.0 Vdc, TA = 25C)
10
7.0
IC = 10 A
5.0
1.0
7.0
5.0
BANDWIDTH = 1.0 Hz
RS 0
30 A
3.0
100 A
300 A
1.0 mA
2.0
BANDWIDTH = 1.0 Hz
RS
IC = 1.0 mA
3.0
2.0
300 A
1.0
0.7
0.5
100 A
30 A
0.3
0.2
1.0
10 A
0.1
10
20
50
100 200
500 1.0 k
f, FREQUENCY (Hz)
2.0 k
5.0 k
10
10 k
20
50
100 200
500 1.0 k 2.0 k
f, FREQUENCY (Hz)
5.0 k
10 k
1.0 M
500 k
BANDWIDTH = 1.0 Hz
200 k
100 k
50 k
20 k
10 k
0.5 dB
5.0 k
1.0 dB
2.0 k
1.0 k
500
2.0 dB
3.0 dB
200
100
(VCE = 5.0 Vdc, TA = 25C)
5.0 dB
10
20
30
50 70 100
200 300
1.0 M
500 k
BANDWIDTH = 1.0 Hz
200 k
100 k
50 k
20 k
10 k
0.5 dB
5.0 k
1.0 dB
2.0 k
1.0 k
500
2.0 dB
3.0 dB
200
100
500 700 1.0 k
5.0 dB
10
20
1.0 M
500 k
30
50 70 100
200 300
500 700 1.0 k
10 Hz to 15.7 kHz
200 k
100 k
50 k
20 k
10 k
NF
0.5 dB
5.0 k
2.0 k
1.0 k
500
1.0 dB
2.0 dB
3.0 dB
5.0 dB
200
100
10
20
30
50 70 100
200 300
+ 20 log10
en2
4KTRS

500 700 1.0 k
Figure 5. Wideband
2413
MMBTA70LT1
400
TJ = 125C
25C
200
55C
100
80
60
VCE = 1.0 V
VCE = 10 V
40
0.003 0.005
0.01
0.02 0.03
0.05 0.07 0.1
0.2 0.3 0.5 0.7 1.0

2.0
3.0
5.0 7.0
10
20
30
50 70 100
100
1.0
TA = 25C
0.8
IC = 1.0 mA
0.6
10 mA
50 mA
100 mA
0.4
0.2
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
TA = 25C
PULSE WIDTH = 300 s
80 DUTY CYCLE 2.0%
300 A
200 A
150 A
40
100 A
50 A
20
0
5.0 10
20
5.0
10
15
20
25
30
35
TJ = 25C
V, VOLTAGE (VOLTS)
1.2
1.0
0.8
0.6
0.4
0.2
0
0.5 1.0
2.0
5.0
10
20
2414
40
1.4
0.2
250 A
60
0.1
IB = 400 A
350 A
50
100
1.6
0.8
*qVC for VCE(sat)
25C to 125C
0
55C to 25C
0.8
25C to 125C
1.6
2.4
0.1
qVB for VBE

0.2
55C to 25C
0.5
1.0 2.0
5.0
10 20
50
100
MMBTA70LT1
500
300
200
200
100
70
50
30
tr
20
10
7.0
5.0
1.0
100
70
50
tf
30
20
2.0
3.0
50 70
20 30
5.0 7.0 10
10
1.0
100
2.0 3.0 5.0 7.0 10

20 30
50 70 100
500
10
TJ = 25C
TJ = 25C
7.0
VCE = 20 V
300
Cib
C, CAPACITANCE (pF)
5.0 V
200
100
5.0
3.0
2.0
Cob
70
50
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
1.0
0.05
50
0.1
0.2
0.5
1.0
2.0
5.0
hfe 200
@ IC = 1.0 mA
7.0
5.0
VCE = 10 Vdc
f = 1.0 kHz
TA = 25C
3.0
2.0
1.0
0.7
0.5
0.3
10
0.2
0.1
10
20
50
200
20
VCC = 3.0 V
IC/IB = 10
IB1 = IB2
TJ = 25C
ts
300
t, TIME (ns)
t, TIME (ns)
1000
700
500
VCC = 3.0 V
IC/IB = 10
TJ = 25C
100
70
50
30
20
VCE = 10 Vdc
f = 1.0 kHz
TA = 25C
hfe 200
@ IC = 1.0 mA
10
7.0
5.0
3.0
0.2
0.5
20
1.0 2.0
5.0
10
50
100
2.0
0.1
0.2
0.5
20
1.0 2.0
5.0
10
50
100
2415

(NORMALIZED)
MMBTA70LT1
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
FIGURE 19
0.05
P(pk)
0.02
0.03
0.02
t1
0.01
0.01
0.01 0.02
SINGLE PULSE
0.05
0.1
0.2
0.5
1.0
t2
2.0
5.0
10
20
50
t, TIME (ms)
100 200

PULSE TRAIN SHOWN
ZJA(t) = r(t) RJA
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 k 100 k
104
VCC = 30 V
103
ICEO
102
101
ICBO
AND

101
Example:
t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)
r(t) is 0.22.
102

T = r(t) x P(pk) x RJA = 0.22 x 2.0 x 200 = 88C.
100
4
0
2
0
+ 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160

2416
MOTOROLA
MMBTA92LT1*
MMBTA93LT1
COLLECTOR
3
PNP Silicon
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
MMBTA92
MMBTA93
Unit
VCEO
300
200
Vdc
VCBO
300
200
Vdc
VEBO
5.0
5.0
Vdc
IC
500
1
2

SOT 23 (TO 236AB)
mAdc
DEVICE MARKING
MMBTA92LT1 = 2D; MMBTA93LT1 = 2E
Characteristic
Symbol
Max
Unit

TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
RqJA
556
C/W
PD
300
mW
2.4
mW/C
RqJA
417
C/W
TJ, Tstg
55 to +150

Derate above 25C

Characteristic
Symbol
Min
Max
300
200
300
200
5.0
0.25
0.25
0.1
Unit
OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0)
(IC = 100 mAdc, IE = 0)
V(BR)CEO
MMBTA92
MMBTA93
V(BR)CBO
MMBTA92
MMBTA93

(IE = 100 mAdc, IC = 0)
(VCB = 200 Vdc, IE = 0)
(VCB = 160 Vdc, IE = 0)
Vdc
V(BR)EBO
Vdc
Adc
ICBO
MMBTA92
MMBTA93

(VEB = 3.0 Vdc, IC = 0)
IEBO
Vdc
Adc
1. FR5 = 1.0 x 0.75 x 0.062 in.

2417
Characteristic
Symbol
Min
Max
Unit
Both Types
Both Types
25
40
MMBTA92
MMBTA93
25
25
0.5
0.5
VBE(sat)
0.9
Vdc
fT
50
MHz
6.0
8.0
DC Current Gain
hFE
VCE(sat)
MMBTA92
MMBTA93

Vdc

(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
2418
Ccb
MMBTA92
MMBTA93
pF
150
TJ = +125C
VCE = 10 Vdc
100
+25C
70
50
55C
30
20
15
1.0
2.0
3.0
5.0
7.0
10
20
30
50
80
100
100
50
C, CAPACITANCE (pF)
Cib
20
10
5.0
2.0
Ccb
1.0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100200 500 1000
100
TJ = 25C
VCE = 20 Vdc
80
60
40
30
20
0
1.0
2.0
5.0
10
20
50
100
1.0
V, VOLTAGE (VOLTS)
0.8
VBE @ VCE = 10 V
0.6
0.4
0.2
0
1.0
2.0
5.0
10
20
50
100
2419
MOTOROLA
MMBTH10LT1
VHF/UHF Transistor
NPN Silicon
COLLECTOR
3
1
BASE
3
2
EMITTER
1
2
CASE 318-08, STYLE 6

SOT-23 (TO-236AB)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
25
Vdc
VCBO
30
Vdc
EmitterBase Voltage
VEBO
3.0
Vdc
DEVICE MARKING
MMBTH10LT1 = 3EM
Characteristic
Symbol
Max
Unit

TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
RJA
556
C/W
PD
300
mW
2.4
mW/C
RJA
417
C/W
TJ, Tstg
55 to +150

Derate above 25C

Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)CEO
25
Vdc
V(BR)CBO
30
Vdc
OFF CHARACTERISTICS
V(BR)EBO
3.0
Vdc
ICBO
100
nAdc
IEBO
100
nAdc
1. FR5 = 1.0 x 0.75 x 0.062 in.

2420
MMBTH10LT1
Characteristic
Symbol
Min
Typ
Max
Unit
hFE
60
VCE(sat)
0.5
Vdc
VBE
0.95
Vdc
fT
650
MHz
(VCB= 10 Vdc, IE = 0, f = 1.0 MHz)
Ccb
0.7
pF
CommonBase Feedback Capacitance

(VCB= 10 Vdc, IE = 0, f = 1.0 MHz)
Crb
0.65
pF
rbCc
9.0
ps
ON CHARACTERISTICS
CollectorEmitter Saturation Voltage (IC = 4.0 mAdc, IB = 0.4 mAdc)

(IC= 4.0 mAdc, VCB = 10 Vdc, f = 31.8 MHz)
2421
MMBTH10LT1
COMMONBASE y PARAMETERS versus FREQUENCY

(VCB = 10 Vdc, IC = 4.0 mAdc, TA = 25C)
yib, INPUT ADMITTANCE
0
70
gib
10
60
20
50
jb ib (mmhos)
y ib , INPUT ADMITTANCE (mmhos)
80
bib
40
30
1000 MHz
30
700
40
20
400
10
0
200
50
100
200
300
400 500
f, FREQUENCY (MHz)
700
60
1000
20
10
Figure 1. Rectangular Form
30
40
50
gib (mmhos)
60
100
70
80
Figure 2. Polar Form
70
60
bfb
60
400
200
50
50
600
100
40
700
gfb
30
jb fb (mmhos)
y ib , FORWARD TRANSFER ADMITTANCE (mmhos)
yfb, FORWARD TRANSFER ADMITTANCE
20
10
40
30
1000 MHz
0
10
20
20
30
10
100
200
300
400 500
f, FREQUENCY (MHz)
2422
700
1000
70
60
50
40
10
30
20
gfb (mmhos)
10
20 30
MMBTH10LT1
COMMONBASE y PARAMETERS versus FREQUENCY

(VCB = 10 Vdc, IC = 4.0 mAdc, TA = 25C)
5.0
4.0
1.0
100
MPS H11
200
jb rb (mmhos)
y rb , REVERSE TRANSFER ADMITTANCE (mmhos)
yrb, REVERSE TRANSFER ADMITTANCE
3.0
400
2.0
brb
brb
2.0
3.0
700
MPS H10
1.0
4.0
grb
100
200
300
400 500
f, FREQUENCY (MHz)
1000 MHz
700
1000
5.0
2.0 1.8 1.2 0.8
0.4
0
0.4
grb (mmhos)
0.8
1.2
1.6
2.0
yob, OUTPUT ADMITTANCE

10
1000 MHz
8.0
8.0
7.0
700
jb ob(mmhos)
yob, OUTPUT ADMITTANCE (mmhos)
10
9.0
6.0
5.0
bob
4.0
6.0
4.0
400
3.0
200
2.0
2.0
gob
1.0
100
0
100
200
300
400 500
f, FREQUENCY (MHz)
700
1000
2.0
4.0
6.0
gob (mmhos)
8.0
10
2423
MOTOROLA
MMBTH24LT1
VHF Mixer Transistor

NPN Silicon
COLLECTOR
3
Designed for
fT = 400 MHz Min @ 8 mA
1
BASE
3
2
EMITTER
1
2

SOT-23 (TO-236AB)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
30
Vdc
VCBO
40
Vdc
EmitterBase Voltage
VEBO
4.0
Vdc
IC
50
mAdc
DEVICE MARKING
MMBTH24LT1 = M3A
Characteristic
Symbol
Max
Unit

TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
RJA
556
C/W
PD
300
mW
2.4
mW/C
RJA
417
C/W
TJ, Tstg
55 to +150

Derate above 25C

Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)CEO
30
Vdc
V(BR)CBO
40
Vdc
V(BR)EBO
4.0
Vdc
ICBO
50
nAdc
OFF CHARACTERISTICS

1. FR5 = 1.0 x 0.75 x 0.062 in.
2424
MMBTH24LT1
Characteristic
Symbol
Min
Typ
Max
Unit
hFE
30
fT
400
620
MHz
Ccb
0.25
0.45
pF
dB
19
24
24
20
ON CHARACTERISTICS
CurrentGain Bandwidth Product(3)
(VCB= 10 Vdc, IE = 0, f = 1.0 MHz)
Conversion Gain
(213 MHz to 45 MHz)
(IC= 8.0 mAdc, VCC = 20 Vdc, Oscillator Injection = 150 mVrms)
(60 MHz to 45 MHz)
(IC = 8.0 mAdc, VCC = 20 Vdc, Oscillator Injection = 150 mVrms)
CG
2425
MOTOROLA
UHF/VHF Transistor
MMBTH69LT1
COLLECTOR
3
PNP Silicon
Designed for UHF/VHF Amplifier Applications
1
BASE
High Current Gain Bandwidth Product

fT = 2000 MHz Min @ 10 mA
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
15
Vdc
VCBO
15
Vdc
EmitterBase Voltage
VEBO
4.0
Vdc
1
2

SOT 23 (TO 236AB)
DEVICE MARKING
MMBTH69LT1 = M3J
Characteristic
Symbol
Max
Unit

TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
RJA
556
C/W
PD
300
mW
2.4
mW/C
RJA
417
C/W
TJ, Tstg
55 to +150

Derate above 25C

Symbol
Min
Typ
Max
Unit
V(BR)CEO
15
Vdc
V(BR)CBO
15
Vdc
V(BR)EBO
4.0
Vdc
ICBO
100
nAdc
hFE
30
300
fT
2000
MHz
Crb
0.35
pF
Characteristic
OFF CHARACTERISTICS
ON CHARACTERISTICS
DC Current Gain (IC = 10 mAdc, VCE = 10 Vdc)
(VCE = 10 Vdc, IE = 0, f = 1.0 MHz)
1. FR5 = 1.0 x 0.75 x 0.062 in.
2426
MOTOROLA
UHF/VHF Transistor
MMBTH81LT1
COLLECTOR
3
PNP Silicon
1
BASE
2
EMITTER
MAXIMUM RATINGS
3
1
Rating
Symbol
Value
Unit
VCEO
20
Vdc
VCBO
20
Vdc
EmitterBase Voltage
VEBO
3.0
Vdc

SOT 23 (TO 236AB)
DEVICE MARKING
MMBTH81LT1 = 3D
Characteristic
Symbol
Max
Unit
PD
225
mW
1.8
mW/C
RJA
556
C/W
PD
300
mW
2.4
mW/C
RJA
417
C/W
TJ, Tstg
55 to +150
Total Device Dissipation FR-5 Board,(1)

TA = 25C
Derate above 25C
Derate above 25C

Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)CEO
20
Vdc
V(BR)CBO
20
Vdc
V(BR)EBO
3.0
Vdc
ICBO
100
nAdc
IEBO
100
nAdc
hFE
60
CollectorEmitter Saturation Voltage (IC = 5.0 mAdc, IB = 0.5 mAdc)
VCE(sat)
0.5
Vdc
VBE(on)
0.9
Vdc
fT
600
MHz
CollectorBase Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Ccb
0.85
pF
CollectorEmitter Capacitance (IB = 0, VCB = 10 Vdc, f = 1.0 MHz)
Cce
0.65
pF
OFF CHARACTERISTICS
ON CHARACTERISTICS
1. FR5 = 1.0 x 0.75 x 0.062 in.

2427
MOTOROLA
Quad General Purpose

Transistors
NPN Silicon
16
15
14
13
12
11
10
MMPQ2222
MMPQ2222A*
16
MAXIMUM RATINGS
Rating
Symbol
MMPQ2222
MMPQ2222A
Unit
VCEO
30
40
Vdc
VCB
60
75
Vdc
VEB
5.0
Vdc
IC
500
mAdc
Total Power Dissipation

@ TA = 25C
Derate above 25C
PD

@ TC = 25C
Derate above 25C
PD
Operating and Storage

Junction Temperature Range
Each
Transistor
Four
Transistors
Equal Power
0.52
4.2
1.0
8.0
0.8
6.4
2.4
19.2

SO16
Watts
mW/C
Watts
TJ, Tstg
mW/C
C
55 to +150

Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
(IC = 10 mAdc, IB = 0)
MMPQ2222
MMPQ2222A
V(BR)CEO
30
40
Vdc

(IC = 10 mAdc, IE = 0)
MMPQ2222
MMPQ2222A
V(BR)CBO
60
75
Vdc
V(BR)EBO
5.0
Vdc
50
10
100

(IB = 10 mAdc, IC = 0)
(VCB = 50 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0)
ICBO
MMPQ2222
MMPQ2222A

(VEB = 3.0 Vdc, IC = 0)
IEBO
nAdc
nAdc
REV 1
2428
MMPQ2222 MMPQ2222A
Symbol
Min
Typ
Max
35
50
75
75
100
100
30
40
50
300
0.4
0.3
1.6
1.0
1.3
1.2
2.6
2.0
fT
200
350
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
4.5
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cib
17
pF
TurnOn Time
(VCC = 30 Vdc, VBE(off) = 0.5 Vdc, IC = 150 mAdc,
IB1 = 15 mAdc)
ton
25
ns
TurnOff Time
(VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc)
toff
250
ns
Characteristic
Unit
ON CHARACTERISTICS
DC Current Gain(1)
(IC = 100 mA, VCE = 10 V)
(IC = 1.0 mA, VCE = 10 V)
(IC = 10 mA, VCE = 10 V)
(IC = 150 mA, VCE = 10 V)
(IC = 300 mA, VCE = 10 V)
(IC = 500 mA, VCE = 10 V)
(IC = 150 mA, VCE = 1.0 V)
hFE
MMPQ2222A
MMPQ2222A
MMPQ2222
MMPQ2222A
MMPQ2222
MMPQ2222A
MMPQ2222
MMPQ2222A
MMPQ2222A
VCE(sat)
MMPQ2222
MMPQ2222A
MMPQ2222
MMPQ2222A
Vdc
VBE(sat)
MMPQ2222
MMPQ2222A
MMPQ2222
MMPQ2222A
Vdc
2429
MOTOROLA
Quad Switching
Transistor
MMPQ2369
NPN Silicon
16
15
14
13
12
11
10
16
1

SO16
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
15
Vdc
VCB
40
Vdc
VEB
4.5
Vdc
IC
500
mAdc

@ TA = 25C
Derate above 25C
PD

@ TC = 25C
Derate above 25C
PD

Each
Transistor
Four
Transistors
Equal Power
0.4
3.2
0.72
6.4
0.66
5.3
1.92
15.4
Watts
mW/C
Watts
TJ, Tstg
mW/C
C
55 to +150

Characteristic
Symbol
Min
Typ
Max
Unit

(IC = 10 mAdc, IB = 0)
V(BR)CEO
15
Vdc

(IC = 10 mAdc, IE = 0)
V(BR)CBO
40
Vdc

(IE = 10 mAdc, IC = 0)
V(BR)EBO
4.5
Vdc
ICBO
0.4
mAdc
OFF CHARACTERISTICS

(VCB = 20 Vdc, IE = 0)
2430
MMPQ2369
Characteristic
Symbol
Min
Typ
Max
40
20
Unit
ON CHARACTERISTICS
DC Current Gain(1)
hFE

VCE(sat)
0.25
Vdc

VBE(sat)
0.9
Vdc
fT
450
550
MHz
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Cob
2.5
4.0
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cib
3.0
5.0
pF
TurnOn Time
(VCC = 3.0 Vdc, VEB(off) = 1.5 Vdc, IC = 10 mAdc,
IB1 = 3.0 mAdc)
ton
9.0
ns
TurnOff Time
toff
15
ns
2431
MOTOROLA

Transistors
MMPQ2907
MMPQ2907A
PNP Silicon
16
15
14
13
12
11
10
16
1

SO16
MAXIMUM RATINGS
Rating
Symbol
MMPQ2907
MMPQ2907A
Unit
VCEO
40
60
Vdc
VCB
VEB
5.0
Vdc
IC
600
mAdc
60
Vdc
Each
Transistor
Four
Transistors
Equal Power

Derate above 25C
PD
0.52
4.2
1.0
8.0
Watts
mW/C

Derate above 25C
PD
0.8
6.4
2.4
19.2
Watts
mW/C

Temperature Range
TJ, Tstg
55 to +150

Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)CEO
40
60
Vdc

(IC = 10 mAdc, IE = 0)
V(BR)CBO
60
Vdc

(IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
Vdc
50
10
50
OFF CHARACTERISTICS
(IC = 10 mAdc, IB = 0)

(VCB = 30 Vdc, IE = 0)
(VCB = 50 Vdc, IE = 0)
(VEB = 3.0 Vdc, IC = 0)
MMPQ2907
MMPQ2907A
ICBO
MMPQ2907
MMPQ2907A
IEBO
nAdc
nAdc
v 300 ms, Duty Cycle = 2.0%.
REV 1
2432
MMPQ2907 MMPQ2907A
Symbol
Min
Typ
Max
75
100
75/100
100
30/50
50
300
0.4
1.6
1.6
1.3
2.6
2.6
fT
200
350
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
6.0
pF
Input Capacitance
(VEB = 2.0 Vdc, IC = 0, f = 1.0 MHz)
Cib
20
pF
TurnOn Time
(VCC = 30 Vdc, IC = 150 mAdc, IB1 = 15 mAdc)
ton
30
ns
TurnOff Time
(VCC = 6.0 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc)
toff
100
ns
Characteristic
Unit
ON CHARACTERISTICS
DC Current Gain(1)
(IC = 100 Adc, VCE = 10 Vdc)
MMPQ2907A
MMPQ2907A
MMPQ2907/2907A
MMPQ2907/2907A
MMPQ2907/2907A
MMPQ2907/2907A

MMPQ2907
MMPQ2907
MMPQ2907

MMPQ2907
MMPQ2907
MMPQ2907A
hFE
VCE(sat)
Vdc
VBE(sat)
Vdc
2433
MOTOROLA
Quad Memory Driver

Transistor
MMPQ3467
PNP Silicon
16
15
14
13
12
11
10
16
1

SO16
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
40
Vdc
VCB
40
Vdc
VEB
5.0
Vdc
IC
1.0
Adc
Each
Transistor
Four
Transistors
Equal Power
Power Dissipation @ TA = 25C

Derate above 25C
PD
0.52
4.2
1.2
9.6
Watts
mW/C
Power Dissipation @ TC = 25C

Derate above 25C
PD
1.0
8.0
2.5
20
Watts
mW/C

Temperature Range
TJ, Tstg
55 to +150

Characteristic
Symbol
Min
Typ
Max
Unit

(IC = 10 mAdc, IB = 0)
V(BR)CEO
40
Vdc

(IC = 10 mAdc, IE = 0)
V(BR)CBO
40
Vdc

(IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
Vdc

(VCB = 30 Vdc, IE = 0)
ICBO
200
nAdc

(VEB = 3.0 Vdc, IC = 0)
IEBO
200
nAdc
OFF CHARACTERISTICS
REV 2
2434
MMPQ3467
Symbol
Min
Typ
Max
Unit
hFE
20
VCE(sat)
0.23
0.5
Vdc
VBE(sat)
0.9
1.2
Vdc
fT
190
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
10
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cib
55
pF
TurnOn Time
(IC = 500 mAdc, IB1 = 50 mAdc)
ton
20
ns
TurnOff Time
(IC = 500 mAdc, IB1 = IB2 = 50 mAdc)
toff
60
ns
Characteristic
ON CHARACTERISTICS
DC Current Gain(1)
2435
MOTOROLA
Quad Core Driver

Transistor
MMPQ3725
NPN Silicon
16
15
14
13
12
11
10
16
1

SO16
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
40
Vdc
VCES
60
Vdc
VEB
5.0
Vdc
IC
1.0
Adc

Temperature Range
TJ, Tstg
55 to +150
Each
Transistor
Four
Transistors
Equal Power

Derate above 25C
PD
0.6
4.8
1.4
11.2
Watts
mW/C

Derate above 25C
PD
1.0
8.0
2.5
2.0
Watts
mW/C

Temperature Range
TJ, Tstg
55 to +150

Symbol
Min
Typ
Max
Unit

(IC = 10 mAdc, IB = 0)
V(BR)CEO
40
Vdc

(IC = 100 mAdc, VBE = 0)
V(BR)CES
60
Vdc

(IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
Vdc
ICBO
0.5
mAdc
Characteristic
OFF CHARACTERISTICS

(VCB = 40 Vdc, IE = 0)
REV 1
2436
MMPQ3725
Characteristic
Symbol
Min
Typ
Max
35
25
75
45
200
Unit
DC Current Gain
hFE

VCE(sat)
0.32
0.45
Vdc

VBE(sat)
0.8
0.9
1.1
Vdc
fT
275
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
5.1
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cib
62
pF
TurnOn Time
(IC = 500 mAdc, IB1 = 50 mAdc, VBE(off) = 3.8 Vdc)
ton
20
ns
TurnOff Time
(IC = 500 mAdc, IB1 = IB2 = 50 mAdc)
toff
50
ns
2437
MOTOROLA

Quad Amplifier/Switch
Transistor
MMPQ3904
NPN Silicon
16
15
14
13
12
11
10
16
1

SO16
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
40
Vdc
VCB
60
Vdc
VEB
6.0
Vdc
IC
200
mAdc

@ TA = 25C
Derate above 25C
PD

@ TC = 25C
Derate above 25C
PD

Each
Transistor
Four
Transistors
Equal Power
0.4
3.2
800
6.4
0.66
5.3
1.92
15.4
mW
mW/C
Watts
TJ, Tstg
mW/C
C
55 to +150

Symbol
Min
Typ
Max
Unit

(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
Vdc

(IC = 10 mAdc, IE = 0)
V(BR)CBO
60
Vdc

(IE = 10 mAdc, IC = 0)
V(BR)EBO
6.0
Vdc

(VCB = 40 Vdc, IE = 0)
ICBO
50
nAdc

(VEB = 4.0 Vdc, IC = 0)
IEBO
50
nAdc
Characteristic
OFF CHARACTERISTICS
REV 1
2438
MMPQ3904
Characteristic
Symbol
Min
Typ
Max
30
50
75
90
160
200
Unit
DC Current Gain
hFE

VCE(sat)
0.1
0.2
Vdc

VBE(sat)
0.65
0.85
Vdc
fT
250
300
MHz
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Cob
2.0
4.0
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cib
4.0
8.0
pF
TurnOn Time
(IC = 10 Vdc, VBE(off) = 0.5 Vdc, IB1 = 1.0 mAdc)
ton
37
ns
TurnOff Time
(IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc)
toff
136
ns
2439
MOTOROLA

Quad Amplifier/Switch
Transistor
MMPQ3906
PNP Silicon
16
15
14
13
12
11
10
16
1

SO16
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
40
Vdc
VCB
40
Vdc
VEB
5.0
Vdc
IC
200
mAdc
Each
Transistor
Four
Transistors
Equal Power

Derate above 25C
PD
0.4
3.2
800
6.4
mW
mW/C

Derate above 25C
PD
0.66
5.3
1.92
15.4
Watts
mW/C

Temperature Range
TJ, Tstg
55 to +150

Characteristic
Symbol
Min
Typ
Max
Unit

(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
Vdc

(IC = 10 mAdc, IE = 0)
V(BR)CBO
40
Vdc

(IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
Vdc

(VCB = 30 Vdc, IE = 0)
ICBO
50
nAdc

(VEB = 4.0 Vdc, IC = 0)
IEBO
50
nAdc
OFF CHARACTERISTICS
REV 1
2440
MMPQ3906
Characteristic
Symbol
Min
Typ
Max
40
60
75
160
180
200
Unit
DC Current Gain
hFE

VCE(sat)
0.1
0.25
Vdc

VBE(sat)
0.65
0.85
Vdc
fT
200
250
MHz
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Cob
3.3
4.5
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cib
4.8
10
pF
TurnOn Time
(IC = 10 mAdc, VBE(off) = 0.5 Vdc, IB1 = 1.0 mAdc)
ton
43
ns
TurnOff Time
(IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc)
toff
155
ns
2441
MOTOROLA
Quad Complementary Pair

Transistor
PNP/NPN Silicon
16
15
14
13
12
11
10
MMPQ6700
for PNP transistors
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
40
Vdc
VCB
40
Vdc
VEB
5.0
Vdc
IC
200
mAdc
Each
Transistor
Four
Transistors
Equal Power

Derate above 25C
PD
0.4
3.2
0.72
6.4
Watts
mW/C

Derate above 25C
PD
0.66
5.3
1.92
15.4
Watts
mW/C

Temperature Range
TJ, Tstg
55 to +150
16
1

SO16

Symbol
Min
Max
Unit

(IC = 10 mAdc, IB = 0)
V(BR)CEO
40
Vdc
V(BR)CBO
40
Vdc
V(BR)EBO
5.0
Vdc
ICBO
50
nAdc
IEBO
50
nAdc
35
50
70
Characteristic
OFF CHARACTERISTICS
DC Current Gain
hFE
VCE(sat)
0.25
Vdc
Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc)
VBE(sat)
0.9
Vdc
fT
200
MHz
Cob
4.5
pF
10
8.0
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
2442
Cib
PNP
NPN
pF
MOTOROLA
Quad MPU Clock Buffer

Transistor
NPN/PNP Silicon
16
15
14
13
12
11
10
MMPQ6842
for PNP transistors
16
1

SO16
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
30
Vdc
VCB
30
Vdc
VEB
4.0
Vdc
IC
200
mAdc

@ TA = 25C
Derate above 25C
PD

@ TC = 25C
Derate above 25C
PD

Each
Transistor
Four
Transistors
Equal Power
0.4
3.2
0.72
6.4
0.66
5.3
1.92
15.4
Watts
mW/C
Watts
TJ, Tstg
mW/C
C
55 to +150

Characteristic
Symbol
Min
Typ
Max
Unit

(IC = 10 mAdc, IB = 0)
V(BR)CEO
30
Vdc

(IC = 10 mAdc, IE = 0)
V(BR)CBO
30
Vdc

(IE = 10 mAdc, IC = 0)
V(BR)EBO
4.0
Vdc

(VCB = 20 Vdc, IE = 0)
ICBO
50
nAdc

(VEB = 3.0 Vdc, IC = 0)
IEBO
50
nAdc
OFF CHARACTERISTICS
2443
MMPQ6842
Symbol
Min
Typ
Max
30
50
70
VCE(sat)
0.05
0.15
Vdc
VBE(sat)
0.65
0.9
Vdc
fT
200
350
MHz
Cob
3.0
4.5
pF
5.0
4.0
10
8.0
tPLH
tPHL
15
6.0
25
15
Rise Time
(0.3 V to 4.7 V, TP3 or TP4)
tr
5.0
25
35
ns
Fall Time
(4.7 V to 0.3 V, TP3 or TP4)
tf
5.0
10
20
ns
Characteristic
Unit
DC Current Gain
(IC = 0.5 mAdc, IB = 0.05 mAdc, 0C
hFE
v T v 70C)

(IC = 0.5 mAdc, IB = 0.05 mAdc)
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cib
PNP
NPN
pF
SWITCHING CHARACTERISTICS (TA = 25C, VCC = 5.0 Vdc)

Propagation Delay Time
(50% Points TP1 to TP3)
2444
ns
MOTOROLA
MMUN2111LT1
SERIES

This new series of digital transistors is designed to replace a single device and its
external resistor bias network. The BRT (Bias Resistor Transistor) contains a single
transistor with a monolithic bias network consisting of two resistors; a series base
resistor and a base-emitter resistor. The BRT eliminates these individual components
by integrating them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SOT-23 package which is
PNP SILICON
BIAS RESISTOR
TRANSISTOR

PIN 3
COLLECTOR
(OUTPUT)
Reduces Board Space

The SOT-23 package can be soldered using wave or
reflow. The modified gull-winged leads absorb thermal
stress during soldering eliminating the possibility of
PIN 1
damage to the die.
BASE
R1
1
R2
Available in 8 mm embossed tape and reel. Use the (INPUT)

Device Number to order the 7 inch/3000 unit reel.
Replace T1 with T3 in the Device Number to order
the 13 inch/10,000 unit reel.

SOT-23 (TO-236AB)
PIN 2
EMITTER
(GROUND)

Symbol
Value
Unit
VCBO
50
Vdc
VCEO
50
Vdc
Collector Current
IC
100
mAdc

Derate above 25C
PD
*200
1.6
mW
mW/C
Symbol
Value
Unit
RJA
625
C/W
TJ, Tstg
65 to +150
TL
260
10
C
Sec
Rating
Rating
Maximum Temperature for Soldering Purposes,
Time in Solder Bath
DEVICE MARKING AND RESISTOR VALUES

Device
Marking
R1 (K)
R2 (K)
MMUN2111LT1
MMUN2112LT1
MMUN2113LT1
MMUN2114LT1
MMUN2115LT1(2)
A6A
A6B
A6C
A6D
A6E
10
22
47
10
10
10
22
47
47
2. New devices. Updated curves to follow in subsequent data sheets.
(Replaces MMUN2111T1/D)
2445
MMUN2111LT1 SERIES
DEVICE MARKING AND RESISTOR VALUES (Continued)
Device
Marking
R1 (K)
R2 (K)
MMUN2116LT1(2)
MMUN2130LT1(2)
MMUN2131LT1(2)
MMUN2132LT1(2)
MMUN2133LT1(2)
MMUN2134LT1(2)
A6F
A6G
A6H
A6J
A6K
A6L
4.7
1.0
2.2
4.7
4.7
22
1.0
2.2
4.7
47
47

Characteristic
Symbol
Min
Typ
Max
Unit
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
100
nAdc
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
500
nAdc

(VEB = 6.0 V, IC = 0)
IEBO
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
mAdc
Collector-Base Breakdown Voltage (IC = 10 A, IE = 0)
V(BR)CBO
50
Vdc
Collector-Emitter Breakdown Voltage(3) (IC = 2.0 mA, IB = 0)
V(BR)CEO
50
Vdc
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
60
100
140
140
250
250
5.0
15
27
140
130
VCE(sat)
0.25
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
OFF CHARACTERISTICS
MMUN2111LT1
MMUN2112LT1
MMUN2113LT1
MMUN2114LT1
MMUN2115LT1
MMUN2116LT1
MMUN2130LT1
MMUN2131LT1
MMUN2132LT1
MMUN2133LT1
MMUN2134LT1
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
MMUN2111LT1
MMUN2112LT1
MMUN2113LT1
MMUN2114LT1
MMUN2115LT1
MMUN2116LT1
MMUN2130LT1
MMUN2131LT1
MMUN2132LT1
MMUN2133LT1
MMUN2134LT1
Collector-Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA)

(IC = 10 mA, IB = 5 mA) MMUN2130LT1/MMUN2131LT1
(IC = 10 mA, IB = 1 mA) MMUN2115LT1/MMUN2116LT1/
MMUN2132LT1/MMUN2133LT1/MMUN2134LT1
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k)
VOL
MMUN2111LT1
MMUN2112LT1
MMUN2114LT1
MMUN2115LT1
MMUN2116LT1
MMUN2130LT1
MMUN2131LT1
MMUN2132LT1
MMUN2133LT1
MMUN2134LT1
MMUN2113LT1
Vdc
Vdc

3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
2446
MMUN2111LT1 SERIES
Characteristic
Symbol
Min
Typ
Max
Unit
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k)

(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k) MMUN2115LT1
MMUN2116LT1
MMUN2131LT1
MMUN2132LT1
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k) MMUN2130LT1
VOH
4.9
Vdc
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
R1/R2
0.8
0.17
0.8
0.055
1.0
0.21
1.0
0.1
1.2
0.25
1.2
0.185
Input Resistor
MMUN2111LT1
MMUN2112LT1
MMUN2113LT1
MMUN2114LT1
MMUN2115LT1
MMUN2116LT1
MMUN2130LT1
MMUN2131LT1
MMUN2132LT1
MMUN2133LT1
MMUN2134LT1
Resistor Ratio MMUN2111LT1/MMUN2112LT1/MMUN2113LT1

MMUN2114LT1
MMUN2115LT1/MMUN2116LT1
MMUN2133LT1
2447
MMUN2111LT1 SERIES
PD , POWER DISSIPATION (MILLIWATTS)
250
200
150
100
RJA = 625C/W
50
0
50
50
100
150
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)

MMUN2111LT1
1
IC/IB = 10
TA = 25C
75C
0.1
0.01
20
TA, AMBIENT TEMPERATURE (C)
60
VCE = 10 V
TA = 75C
25C
25C
100
10
10
100
f = 1 MHz
lE = 0 V
TA = 25C
100
75C
VO = 0.2 V
Vin, INPUT VOLTAGE (VOLTS)
0.1
0.001
50
100
25C
0.01
10
20
30
40
TA = 25C
10
TA = 25C
10
25C
75C
1
VO = 5 V
0
3
4
5
6
7
2448
80
Figure 2. VCE(sat) versus IC
1000
40
Figure 1. Derating Curve
IC , COLLECTOR CURRENT (mA)
25C
10
0.1
10
20
30
40
50
MMUN2111LT1 SERIES
1000
10
h FE , DC CURRENT GAIN (NORMALIZED)

MMUN2112LT1
IC/IB = 10
TA = 25C
25C
1
75C
0.1
0.01
VCE = 10 V
TA = 75C
25C
25C
100
10
0
20
40
60
80
10
100
f = 1 MHz
lE = 0 V
TA = 25C
100
25C
TA = 25C
10
0.1
VO = 5 V
0.01
0.001
50
10
20
30
40
75C
10
100
VO = 0.2 V
TA = 25C
25C
10
75C
0.1
10
20
30
40
50
2449
MMUN2111LT1 SERIES
1000
IC/IB = 10
TA = 25C
h FE , CURRENT GAIN (NORMALIZED)

MMUN2113LT1
25C
75C
0.1
0.01
10
20
30
TA = 75C
25C
25C
100
10
40
10
100
I C , COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25C
0.8
100
0.6
0.4
0.2
TA = 75C
25C
25C
10
1
0.1
0.01
VO = 5 V
10
20
30
40
50
0.001
10
100
Vin , INPUT VOLTAGE (VOLTS)
VO = 2 V
TA = 25C
25C
75C
10
0.1
10
20
30
40
50
2450
MMUN2111LT1 SERIES
180
IC/IB = 10
hFE, DC CURRENT GAIN (NORMALIZED)

MMUN2114LT1
TA = 25C
25C
0.1
75C
0.01
0.001
20
40
60
25C
140
25C
120
100
80
60
40
20
0
80
TA = 75C
VCE = 10 V
160
90 100
100
TA = 75C
f = 1 MHz
lE = 0 V
TA = 25C
3.5
80
4.5
3
2.5
2
1.5
1
0.5
0
8 10 15 20 40 50 60 70
6 8 10 15 20 25 30 35 40
45
50
25C
25C
10
VO = 5 V
1
4
6
10
+12 V
10
VO = 0.2 V
TA = 25C
V in , INPUT VOLTAGE (VOLTS)
25C
Typical Application
for PNP BRTs
75C
1
LOAD
0.1
10
20
30
40
50
2451
MOTOROLA
MMUN2211LT1
SERIES

resistor and a base-emitter resistor. The BRT eliminates these individual components
cost and board space. The device is housed in the SOT-23 package which is
NPN SILICON
BIAS RESISTOR
TRANSISTOR

PIN 3
COLLECTOR
(OUTPUT)
Reduces Board Space

The SOT-23 package can be soldered using wave or
reflow. The modified gull-winged leads absorb thermal
stress during soldering eliminating the possibility of
damage to the die.
Available in 8 mm embossed tape and reel. Use the
Device Number to order the 7 inch/3000 unit reel.
the13 inch/10,000 unit reel.
R1
1
PIN 1 R2
BASE
(INPUT)
PIN 2
EMITTER
(GROUND)

SOT-23 (TO-236AB)

Symbol
Value
Unit
VCBO
50
Vdc
VCEO
50
Vdc
Collector Current
IC
100
mAdc

Derate above 25C
PD
*200
1.6
mW
mW/C
RJA
625
C/W
TJ, Tstg
65 to +150
TL
260
10
C
Sec
Rating
Time in Solder Bath

Device
Marking
R1 (K)
R2 (K)
MMUN2211LT1
MMUN2212LT1
MMUN2213LT1
MMUN2214LT1
MMUN2215LT1(2)
MMUN2216LT1(2)
MMUN2230LT1(2)
MMUN2231LT1(2)
MMUN2232LT1(2)
MMUN2233LT1(2)
MMUN2234LT1(2)
A8A
A8B
A8C
A8D
A8E
A8F
A8G
A8H
A8J
A8K
A8L
10
22
47
10
10
4.7
1
22
2.2
4.7
4.7
22
10
22
47
47
1
22
2.2
4.7
47
47
(Replaces MMUN2211T1/D)
2452
MMUN2211LT1 SERIES
Characteristic
Symbol
Min
Typ
Max
Unit
ICBO
100
nAdc
ICEO
500
nAdc
IEBO
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
mAdc
V(BR)CBO
50
Vdc
V(BR)CEO
50
Vdc
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
60
100
140
140
350
350
5.0
15
30
200
150
VCE(sat)
0.25
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
4.9
OFF CHARACTERISTICS

(VEB = 6.0 V, IC = 0)
MMUN2211LT1
MMUN2212LT1
MMUN2213LT1
MMUN2214LT1
MMUN2215LT1
MMUN2216LT1
MMUN2230LT1
MMUN2231LT1
MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
MMUN2211LT1
MMUN2212LT1
MMUN2213LT1
MMUN2214LT1
MMUN2215LT1
MMUN2216LT1
MMUN2230LT1
MMUN2231LT1
MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)

Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k )
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k )
VOL
MMUN2211LT1
MMUN2212LT1
MMUN2214LT1
MMUN2215LT1
MMUN2216LT1
MMUN2230LT1
MMUN2231LT1
MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
MMUN2213LT1
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k )

(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k )
MMUN2230LT1
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k )
MMUN2215LT1
MMUN2216LT1
MMUN2233LT1
VOH
Vdc
Vdc
Vdc
3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%.
2453
MMUN2211LT1 SERIES
Characteristic
Symbol
Min
Typ
Max
Unit
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
R1/R2
0.8
0.17
0.8
0.055
0.38
1.0
0.21
1.0
0.1
0.47
1.2
0.25
1.2
0.185
0.56
Input Resistor
MMUN2211LT1
MMUN2212LT1
MMUN2213LT1
MMUN2214LT1
MMUN2215LT1
MMUN2216LT1
MMUN2230LT1
MMUN2231LT1
MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
Resistor Ratio
MMUN2214LT1
MMUN2215LT1/MMUN2216LT1
MMUN2233LT1
MMUN2234LT1
2454
MMUN2211LT1 SERIES
250
200
150
100
RJA = 625C/W
50
50
0
50
100
150

MMUN2211LT1
1
IC/IB = 10
TA = 25C
25C
75C
0.1
0.01
0.001
20
40
60
4
VCE = 10 V
TA = 75C
25C
25C
1000
100
10
10
100
f = 1 MHz
lE = 0 V
TA = 25C
10
20
30
40
100
10
25C
TA = 25C
TA = 25C
VO = 0.2 V
75C
10
50
0.1
0.01
0.001
80
25C
75C
1
VO = 5 V
0
5
6
7
3
4
10
0.1
10
20
30
40
50
2455
MMUN2211LT1 SERIES
1000
1
IC/IB = 10

MMUN2212LT1
TA = 25C
25C
75C
0.1
0.01
VCE = 10 V
TA = 75C
25C
25C
100
10
0.001
0
20
40
60
80
10
100
f = 1 MHz
lE = 0 V
TA = 25C
10
20
30
100
50
40
75C
25C
TA = 25C
10
0.1
0.01
VO = 5 V
0.001
10
100
Vin , INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA = 25C
10
75C
25C
0.1
10
20
30
40
50
2456
MMUN2211LT1 SERIES
1000
10
IC/IB = 10
TA = 25C
25C
h FE , DC CURRENT GAIN (NORMALIZED)

MMUN2213LT1
75C
0.1
0.01
0
20
40
60
VCE = 10 V
TA = 75C
25C
25C
100
10
80
10
100
25C
75C
f = 1 MHz
lE = 0 V
TA = 25C
0.8
100
0.6
0.4
0.2
10
TA = 25C
0.1
0.01
VO = 5 V
50
10
20
30
40
0.001
0
4
6
10
100
VO = 0.2 V
TA = 25C
10
25C
75C
0.1
0
10
20
30
40
50
2457
MMUN2211LT1 SERIES
300
TA = 25C
IC/IB = 10
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS

MMUN2214LT1
25C
0.1
75C
0.01
0.001
20
40
60
25C
200
25C
150
100
50
0
80
TA = 75C
VCE = 10
250
100
75C
f = 1 MHz
lE = 0 V
TA = 25C
3.5
80 90 100
2.5
2
1.5
1
0.5
0
8 10 15 20 40 50 60 70
6 8 10 15 20 25 30 35 40
45
50
25C
TA = 25C
10
VO = 5 V
1
4
6
10
10
TA = 25C
VO = 0.2 V
25C
75C
1
0.1
10
20
30
40
50
2458
MMUN2211LT1 SERIES
+12 V
ISOLATED
LOAD
FROM P OR
OTHER LOGIC
+12 V
VCC
OUT
IN
LOAD
Figure 23. Open Collector Inverter: Inverts

the Input Signal
2459
MOTOROLA

Transistors
NPN Silicon
14
13
12
11
10
NPN
MPQ2222
MPQ2222A*
14
1
MAXIMUM RATINGS
Rating
Symbol
MPQ2222
MPQ2222A
Unit
VCEO
30
40
Vdc
VCBO
VEBO
5.0
Vdc
IC
500
mAdc

Derate above 25C
Temperature Range
60
Vdc
Each
Transistor
Total
Device
0.65
5.2
1.9
15.2
PD
TJ, Tstg
CASE 64606, STYLE 1

TO116
55 to +150
Watts
mW/C
C
Characteristic
Symbol
Max
Unit
RqJA
66
C/W

Characteristic
Symbol
Min
Max
40
40
60
75
5.0
6.0
50
10
100
Unit
OFF CHARACTERISTICS
(IC = 10 mAdc, IB = 0)
(IC = 10 mAdc, IE = 0)
(IE = 10 mAdc, IC = 0)
(VCB = 50 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0)
V(BR)CEO
MPQ2222
MPQ2222A
V(BR)CBO
MPQ2222
MPQ2222A
Vdc
V(BR)EBO
MPQ2222
MPQ2222A
Vdc
ICBO
MPQ2222
MPQ2222A

(VEB = 3.0 Vdc, IC = 0)
Vdc
IEBO
nAdc
nAdc
(Replaces MPQ2221/D)
2460
MPQ2222 MPQ2222A
Symbol
Min
Max
35
50
75
100
30
40
300
0.4
0.3
1.6
1.0
0.6
1.3
1.2
2.6
2.0
fT
200
MHz
Cobo
8.0
pF
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
30
pF
ton
35
ns
toff
285
ns
Characteristic
Unit
ON CHARACTERISTICS
DC Current Gain(1)
hFE
MPQ2222A
MPQ2222A
MPQ2222,A
MPQ2222,A
MPQ2222
MPQ2222A

VCE(sat)
MPQ2222
MPQ2222A
MPQ2222
MPQ2222A

(IC = 500 mA, IB = 50 mA)
Vdc
VBE(sat)
MPQ2222
MPQ2222A
MPQ2222
MPQ2222A

(IC = 500 mA, IB = 50 mA)
Vdc

TurnOn Time
(VCC = 30 Vdc, VBE(off) = 0.5 Vdc,
MPQ2222A
TurnOff Time
(VCC = 30 Vdc, IC = 150 mAdc,
GENERATOR RISE TIME 2.0 ns

PW 200 ns
DUTY CYCLE = 2.0%
DUTY CYCLE = 2.0%

+30 V
200
+16.2 V
619
9.9 V
+30 V
100 ms
< 5.0 ns
200
MPQ2222A
1.0 k
0
1N916
0.5 V
SCOPE
Rin > 100 k ohms
Cin 12 pF
RISE TIME 5.0 ns
500 ms

13.8 V
3.0 V
SCOPE
Rin > 100 k ohms
Cin 12 pF
RISE TIME 5.0 ns
Figure 2. Storage Time and Fall Time

2461
MPQ2222 MPQ2222A
4.0
3.0
VCE = 1.0 V
VCE = 10 V
TJ = 175C
2.0
25C
1.0
0.7
55C
0.5
0.3
0.2
0.5
0.7
1.0
2.0
3.0
7.0
5.0
10
20
50
30
70
100
300
200
500
qV , TEMPERATURE COEFFICIENT (mV/ C)
1.4
TJ = 25C
V, VOLTAGE (VOLTS)
1.2
1.0
0.8
0.6
VBE @ VCE = 1.0 V
0.4
0.2
0
0.5
+1.6
+0.8
25C TO 175C
qVC FOR VCE(sat)

0
55C TO 25C
0.8
qVB FOR VBE
1.6
2.4
1.0
5.0
2.0
10
20
50
100
200
0.5
500
1.0
5.0
2.0
10
20
50
100
200
500
NOISE FIGURE
(VCE = 10 Vdc, TA = 25C)
6.0
10
f = 1.0 kHz
4.0
IC = 10 A
RS = 4.3 k
3.0
m
W
2.0
IC = 100 A
RS = 1.0 k
2462
10 A
6.0
4.0
2.0
1.0
0
0.1
100 A
IC = 1.0 mA
8.0
5.0
0
0.2
0.5
1.0
2.0
5.0
10
20
50
100
0.1
0.2
0.5
1.0
2.0
5.0
10
20
f, FREQUENCY (kHz)
50
100
30
500
TJ = 25C
VCE = 20 V
TJ = 25C
f = 100 MHz
300
200
20
C, CAPACITANCE (pF)
f T , CURRENTGAIN BANDWIDTH PRODUCT (MHz)
MPQ2222 MPQ2222A
100
70
50
30
7.0
Cob
5.0
20
10
Cib
10
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
3.0
0.1
20 30
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20
SWITCHING TIME CHARACTERISTICS

200
10 k
TJ = 25C
IC/IB = 10
tr
2k
VCC = 30 V
UNLESS NOTED
CHARGE (pC)
t, TIME (ns)
100
50
30
td @ VEB(off) = 0
20
tr @ 5 V
10
3.0
td @ VEB(off) = 2 V
5.0
10
QT, TOTAL CONTROL

CHARGE
HIGH GAIN TYPES
500
200
VCC = 30 V
100
QA, ACTIVE REGION

CHARGE
LOW GAIN TYPES

ALL TYPES
20
30
20
50
100
200 300
3.0
5.0 7.0 10
20
50 70 100
30
300
300
200
200
ts
IC/IB = 10
100
70
IC/IB = 20
50
tf
IC/IB = 10
30
LOW GAIN TYPES
TJ = 25C
20
VCC = 5 V
UNLESS NOTED
1k
50
t s ,t f , STORAGE AND FALL TIME (ns)
t s ,t f , STORAGE AND FALL TIME (ns)
TJ = 25C
IC/IB = 10
5k
200 300
ts
IC/IB = 10
100
IC/IB = 20
70
IC/IB = 10
50
tf
30
HIGH GAIN TYPES
TJ = 25C
20
10
10
10
20
30
50
70
100
200
300
10
20
30
50
70
100
Figure 12. TurnOff Behavior
Figure 13. TurnOff Behavior
200
300
2463
MPQ2222 MPQ2222A
GENERATOR RISE TIME 2.0 ns
PW 200 ns
+30 V
DUTY CYCLE = 2.0%
+30 V
RISE TIME 3.0%

DUTY CYCLE = 2.0%
200
9.9 V
619
200
SCOPE
Rin > 100 k ohms
Cin 12 pF
RISE TIME 5.0 ns
+16.2 V
0
> 200 ns
SCOPE
Rin > 100 k ohms
Cin 12 pF
RISE TIME 5.0 ns
1.0 k
13.8 V
1N916
3.0 V

2464
Figure 15. Storage Time and Fall Time

MOTOROLA
Quad Switching
Transistor
MPQ2369
NPN Silicon

14
13
12
11
10
NPN
14
1
CASE 64606, STYLE 1

TO116
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
15
Vdc
VCBO
40
Vdc
VEBO
4.5
Vdc
IC
500
mAdc

Derate above 25C
Temperature Range
Each
Transistor
Total
Device
0.5
5.0
1.5
15
PD
TJ, Tstg
Watts
mW/C
C
55 to +125
Characteristic
Symbol
Max
Unit
RqJA
83
C/W

Symbol
Min
Typ
Max
Unit

(IC = 10 mAdc, IB = 0)
V(BR)CEO
15
Vdc

(IC = 10 mAdc, IE = 0)
V(BR)CBO
40
Vdc

(IE = 10 mAdc, IC = 0)
V(BR)EBO
4.5
Vdc
ICBO
0.4
mAdc
Characteristic
OFF CHARACTERISTICS

(VCB = 20 Vdc, IE = 0)
2465
MPQ2369
Symbol
Characteristic
Min
Typ
Max
40
20
Unit
ON CHARACTERISTICS
DC Current Gain(1)
hFE

VCE(sat)
0.25
Vdc

VBE(sat)
0.9
Vdc
fT
450
550
MHz
Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Cobo
2.5
4.0
pF
Cibo
3.0
5.0
pF
TurnOn Time
(VCC = 3.0 Vdc, VBE = 1.5 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc)
ton
9.0
ns
TurnOff Time
toff
15
ns

2466
MPQ2369
+10 V
980
SCOPE
+6.0 V
500
CS 3.0 pF
4.0 V
PULSE WIDTH = 300 ns
tf 1.0 ns
DUTY CYCLE 2.0%
Figure 1. Storage Time Test Circuit
200
200
IC/IB = 10
TJ = 25C
100
70
50
t, TIME (ns)
t, TIME (ns)
70
50
30
20
VCC = 10 V
IC/IB = 10
TJ = 25C
100
tr @ VCC = 10 V
tr @ VCC = 3.0 V
10
7.0
5.0
30
20
tf
10
7.0
5.0
3.0
2.0
1.0
2.0
3.0
5.0 7.0 10
20
30
ts
3.0
2.0
50 70 100
1.0
2.0
3.0
30
VCC = 3.0 V
VCC = 3.0 V
270
270
SCOPE
50 70 100
SCOPE
+10.75 V
3.3 k
1.5 V
20
+10.75 V
0
5.0 7.0 10
3.3 k
CS < 4.0 pF

tr < 1.0 ns
DUTY CYCLE 2.0%
Figure 4. TurnOn Test Circuit
CS < 4.0 pF
4.15 V
tf 1.0 ns
DUTY CYCLE 2.0%
Figure 5. TurnOff Test Circuit
2467
5.0
TJ = 25C
Cib
C, CAPACITANCE (pF)
3.0
2.0
Cob
1.0
0.7
0.5
0.05
0.1
0.5
0.2
1.0
2.0
5.0
10
20
50
MPQ2369
2.0 k
VCE = 10 V
f = 100 MHz
1.0 k
700
500
300
200
1.0
2.0
3.0
20
5.0 7.0 10
30
50
70 100
1.4
500
300
TJ = 25C
TJ = 150C
1.2
25C
1.0
V, VOLTAGE (VOLTS)
100
70
50
55C
30
20
VCE = 1.0 V
VCE = 5.0 V
10
V CE , COLLECTOREMITTER VOLTAGE (VOLTS)
7.0
5.0
0.2
0.5
1.0
2.0
5.0
10
20
50
100
VCE(SAT) @ IC/IB = 10
0.5
1.0
2.0
5.0
10
20
50
100
200
+2.0
0.8
30 mA
100 mA
200 mA
0.6
0.4
2468
0.4
TJ = 25C
0
0.05
VBE(ON) @ VCE = 1.0 V

0.6
0
0.2
200
1.0
0.2
VBE(SAT) @ IC/IB = 10
0.8
0.2
q V , TEMPERATURE COEFFICIENT (mV/ C)
h FE , DC CURRENT GAIN
200
IC = 10 mA
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50

+1.0
25C TO 150C
*qVC FOR VCE(SAT)

0
55C TO 25C
1.0
25C TO 150C
qVB FOR VBE

2.0
55C TO 25C
3.0
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
MOTOROLA
Quad Amplifier Transistors
MPQ2483
MPQ2484*
NPN Silicon
14
13
12
11
10
NPN
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
40
Vdc
VCBO
60
Vdc
VEBO
6.0
Vdc
IC
50
mAdc

@ TA = 25C(1)
Derate above 25C
PD

@ TC = 25C
Derate above 25C
PD

Temperature Range
TJ, Tstg
Each
Transistor
Four
Transistors
Equal Power
500
4.0
900
7.2
mW
mW/C
0.825
6.7
2.4
19.2
Watts
mW/C
14
1
CASE 64606, STYLE 1

TO116
55 to +150
Characteristic
Junction
to Case
Junction
to Ambient
Unit
Thermal Resistance
Each Die
Effective, 4 Die
151
52
250
134
C/W
C/W
Coupling Factors
Q1Q4 or Q2Q3
Q1Q2 or Q3Q4
34
2.0
70
26
%
%

Symbol
Min
Typ
Max
Unit

(IC = 10 mAdc, IB = 0)
V(BR)CEO
40
Vdc

(IC = 10 mAdc, IE = 0)
V(BR)CBO
60
Vdc

(IE = 10 mAdc, IC = 0)
V(BR)EBO
6.0
Vdc

(VCB = 45 Vdc, IE = 0)
ICBO
20
nAdc

(VEB = 3.0 Vdc, IC = 0)
IEBO
20
nAdc
Characteristic
OFF CHARACTERISTICS
1. Second Breakdown occurs at power levels greater than 3 times the power dissipation rating.
300 ms; Duty Cycle
2.0%.
2469
MPQ2483 MPQ2484
Symbol
Min
Typ
Max
MPQ2483
MPQ2484
100
200
MPQ2483
MPQ2484
150
300
MPQ2483
MPQ2484
150
300
0.13
0.15
0.35
0.5
0.58
0.70
0.7
0.8
fT
50
100
MHz
Cibo
4.0
8.0
pF
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Ccb
1.8
6.0
pF
3.0
2.0
Characteristic
Unit
ON CHARACTERISTICS
DC Current Gain(2)
hFE

VCE(sat)

VBE(sat)
Vdc
Vdc

Noise Figure
(IC = 10 mAdc, VCE = 5.0 Vdc, RS = 10 k ohms,
f = 1.0 kHz, BW = 10 kHz)
2470
NF
MPQ2483
MPQ2484
dB
MOTOROLA

Transistors
NPN/PNP Silicon
14
13
12
11
10
MPQ6100A
TYPE A
14
13
12
11
10
MPQ6100A
MPQ6600A1*
Voltage and Current are negative
for PNP Transistors
COMPLEMENTARY
MPQ6600A1
TYPE B
14
1
CASE 64606, STYLE 1

TO116
MAXIMUM RATINGS
Symbol
MPQ6100A
MPQ6600A1
Unit
VCEO
45
Vdc
VCBO
60
Vdc
VEBO
5.0
Vdc
IC
50
mAdc
Rating

@ TA = 25C
Derate above 25C
PD

@ TC = 25C
Derate above 25C
PD

Temperature Range
TJ, Tstg
Each
Transistor
Four
Transistors
Equal Power
500
4.0
900
7.2
mW
mW/C
0.825
6.7
2.4
19.2
Watts
mW/C
55 to +150
Characteristic
Junction to
Case
Junction to
Ambient
Unit
Thermal Resistance(1)
Each Die
Effective, 4 Die
151
52
250
139
C/W
C/W
Coupling Factors
Q1Q4 or Q2Q3
Q1Q2 or Q3Q4
34
2.0
70
26
%
%
REV 2
2471
MPQ6100A MPQ6600A1
Characteristic
Symbol
Min
Typ
Max
45
60
5.0
10
Unit
OFF CHARACTERISTICS
(IC = 10 mAdc, IB = 0)
V(BR)CEO
MPQ6100A, 6600A1

(IC = 10 mAdc, IE = 0)
V(BR)CBO

(IE = 10 mAdc, IC = 0)
V(BR)EBO

(VCB = 50 Vdc, IE = 0)
Vdc
Vdc
Vdc
ICBO
nAdc
DC Current Gain
(IC = 500 Adc, VCE = 5.0 Vdc)
hFE
100
150
150
125
0.25
0.8
50
1.2
1.8
4.0
4.0
8.0
8.0
NF
4.0
dB
DC Current Gain Ratio

(IC = 100 Adc, VCE = 5.0 Vdc)
hFE1/hFE2
0.8
1.0
BaseEmitter Voltage Differential

(IC = 100 Adc, VCE = 5.0 Vdc)
|VBE1VBE2|
20
mVdc
MPQ6100A, 6600A1
MPQ6100A, 6600A1
MPQ6100A, 6600A1
MPQ6100A, 6600A1

(IC = 1.0 mAdc, IB = 100 Adc)
VCE(sat)

(IC = 1.0 mAdc, IB = 100 Adc)
VBE(sat)
Vdc
Vdc

Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f =1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
fT
Cobo
PNP
NPN
pF
Cibo
PNP
NPN
Noise Figure
(IC = 100 Adc, VCE = 5.0 Vdc, RS = 10 k,
f = 1.0 kHz, BW = 10 kHz)
MHz
pF
MATCHING CHARACTERISTICS (MPQ6600A1 ONLY)
2472
MPQ6100A MPQ6600A1
SPOT NOISE FIGURE
(VCE = 10 Vdc, TA = 25C)
12
10
NOISE FIGURE (dB)
NOISE FIGURE (dB)
12
1 mA
8
6
4
100 A
2
0
100 A
8
6
10 A
4
2
10 A
1.0 k
10 k
1 mA
10
100 k
1.0 k
10 k
Figure 1. Source Resistance Effects, f = 1.0 kHz

Rs SOURCE RESISTANCE
10
Figure 2. Source Resistance Effects, f = 10 Hz
VCE = 5.0 Vdc
IC = 100 A, RS = 30 k
800
IC = 10 A, RS = 100 k
NOISE FIGURE (dB)
12
IC = 1.0 mA, RS = 1.0 k

8
IC = 10 A, RS = 10 k
IC = 100 A, RS = 3.0 k
100 k
TA = 125C
600
TA = 25C
400
TA = 55C
200
2
0
1.0 k
10 k
f, FREQUENCY (Hz)
100 k
0.01
0.1
1.0
10
Figure 4. Typical Current

Gain Characteristics
2473
MOTOROLA

Transistors
PNP Silicon
14
13
12
11
10
PNP
MPQ2906
MPQ2907
MPQ2907A*
14
MAXIMUM RATINGS
Symbol
MPQ2906
MPQ2907
VCEO
40
VCBO
60
Vdc
VEBO
5.0
Vdc
IC
600
mAdc
Rating

Derate above 25C
Temperature Range
MPQ2907A
Unit
60
Vdc
Each
Transistor
Total
Device
0.65
6.5
1.9
19
PD
TJ, Tstg
55 to +125
CASE 64606, STYLE 1

TO116
Watts
mW/C
C
Characteristic
Symbol
Max
Unit
RqJA
66
C/W

Characteristic
Symbol
Min
Max
40
60
Unit
OFF CHARACTERISTICS
(IC = 10 mAdc, IB = 0)
V(BR)CEO
MPQ2906, MPQ2907
MPQ2907A
Vdc

(IC = 10 mAdc, IE = 0)
V(BR)CBO
60
Vdc

(IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
Vdc
ICBO
50
nAdc
IEBO
50
nAdc

(VCB = 30 Vdc, IE = 0)
(VCB = 50 Vdc, IE = 0)
MPQ2906, MPQ2907
MPQ2907A

(VEB = 3.0 Vdc, IE = 0)
MPQ2906,7 Only
REV 3
2474
MPQ2906 MPQ2907 MPQ2907A

Symbol
Min
Max
75
100
35
75
100
100
40
100
20
30
50
300
0.4
1.6
1.6
1.3
2.6
2.6
fT
200
MHz
Cobo
8.0
pF
Cibo
30
pF
ton
45
ns
toff
180
ns
Characteristic
Unit
ON CHARACTERISTICS
DC Current Gain(1)
hFE
MPQ2907A
MPQ2907A
MPQ2906
MPQ2907
MPQ2907A
MPQ2907A
MPQ2906
MPQ2907
MPQ2906
MPQ2907
MPQ2907A

(IC = 500 mA, IB = 500 mA)
(IC = 500 mA, IB = 50 mA)
VCE(sat)
Vdc
MPQ2906, MPQ2907
MPQ2907A
VBE(sat)
Vdc
MPQ2906, MPQ2907
MPQ2906, MPQ2907
MPQ2907A

TurnOn Time
(VCC = 30 Vdc, IC = 150 mAdc, IB1 = 15 mAdc)
TurnOff Time
MPQ2907A Only
MPQ2907A Only
30
INPUT
Zo = 50
PRF = 150 PPS
RISE TIME 2.0 ns
INPUT
Zo = 50
PRF = 150 PPS
RISE TIME 2.0 s
200
1.0 k
0
16 V
+15 V
TO OSCILLOSCOPE
RISE TIME 5.0 ns
50
1.0 k
200 ns

Test Circuit
50
37
TO OSCILLOSCOPE
RISE TIME 5.0 ns
1.0 k
0
30 V
6.0
1N916
200 ns

Test Circuit
2475

2.0
TJ = +175C
+25C
1.0
0.7
0.5
55C
VCE = 10 V
VCE = 1.0 V
0.3
0.2
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
30
20
70
50
100
200
300
500

2.0
+2.0
TJ = 25C
qVC FOR VCE(sat)
+1.0
COEFFICIENT (mV/ C)
ON VOLTAGE (VOLTS)
1.6
1.2
0.8
VBE @ VCE = 1.0 V
55C TO +25C
0
+25C TO +175C
qVB FOR VBE
1.0
+25C TO +175C
2.0
0.4
0
0.5
55C TO +25C
3.0
1.0
5.0
2.0
10
20
100
50
200
0.5
500
1.0
5.0
2.0
10
20
50
100
200
500
NOISE FIGURE
(VCE = 10 V, TA = 25C)
6.0
4.0
IC = 10 A
RS = 4.7 k
3.0
IC = 1.0 mA
RS = 0.7 k
2.0
2476
IC = 100 A
RS = 1.2 k
0.2
0.5
1.0
2.0
5.0
10
20
50
100 A
6.0
4.0
2.0
m
W
1.0
0
0.1
f = 1.0 kHz
IC = 10 A
8.0
5.0
10
VCE = 10 Vdc
TA = 25C
1.0 mA
VCE = 10 Vdc
TA = 25C
0
100
0.1
0.2
0.5
1.0
2.0
5.0
10
20
f, FREQUENCY (kHz)
50
100
30
600
400
VCE = 20 Vdc
f = 100 MHz
TJ = 25C
200
100
Cob
10
7.0
5.0
60
3.0
0.5 0.7 1.0
2.0
3.0
5.0
10
20
30
50
0.2
2.0
3.0
5.0 7.0
10
20
5000
VCC = 30 V, VBE(off) = 2.0 V
VCC = 10 V, VBE(off) = 0 V
3000
VCC = 30 V
TJ = 25C
2000
IC/IB = 10
TJ = 25C
tr
Q, CHARGE (pC)
100
70
td
50
QT, TOTAL CONTROL CHARGE

1000
700
500
30
300
20
200
10
5.0 7.0
10
20
30
50
70 100
200 300
20
30
50
70 100
200 300
300
300
ts ts 1/8 tf
100
IB1 = IB2
TJ = 25C
70
IC/IB = 10
30
500
VCC = 30 V
IB1 = IB2
TJ = 25C
200
200
IC/IB = 20
100
70
IC/IB = 10
50
30
20
IC/IB = 20
10
10
500
10
5.0 7.0
QA, ACTIVE REGION CHARGE
100
5.0 7.0
500
500
20
0.5 0.7 1.0
200
50
0.3
300
t, TIME (ns)
Cib
80
500
TJ = 25C
f = 100 kHz
20
C, CAPACITANCE (pF)
20
30
50
70 100
200 300
500
10
5.0 7.0
10
20
30
50
70 100
200 300
500
2477
30 V
P.W. 200 ns
tr 2.0 ns
DUTY CYCLE 2.0%
30 V
P.W. 1.0 ms
tr 2.0 ns
DUTY CYCLE 2.0%
200
200
+13.8 V
1.0 k
0
SCOPE
SCOPE
1.0 k
0
16 V
16.2 V
1N916
3.0 V

Test Circuit
2478

Test Circuit
MOTOROLA
Quad Memory Driver

Transistor
MPQ3467
PNP Silicon

14
13
12
11
10
PNP
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
40
Vdc
VCBO
40
Vdc
VEBO
5.0
Vdc
IC
1.0
Adc

@ TA = 25C(1)
Derate above 25C
PD

@ TC = 25C
Derate above 25C
PD

Temperature Range
TJ, Tstg
Each
Transistor
Four
Transistors
Equal Power
650
5.2
1500
12
mW
mW/C
1.25
10
3.2
25.6
Watts
mW/C
14
1
CASE 64606, STYLE 1

TO116
55 to +150
Characteristic
RqJC
Junction
to Case
RqJA
Junction
to Ambient
Unit
Thermal Resistance
Each Die
Effective, 4 Die
100
39
193
83.2
C/W
C/W
Coupling Factors
Q1Q4 or Q2Q3
Q1Q2 or Q3Q4
45
5.0
55
10
%
%

Symbol
Min
Typ
Max
Unit

(IC = 10 mAdc, IB = 0)
V(BR)CEO
40
Vdc

(IC = 10 mAdc, IE = 0)
V(BR)CBO
40
Vdc

(IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
Vdc

(VCB = 30 Vdc, IE = 0)
ICBO
200
nAdc

(VEB = 3.0 Vdc, IC = 0)
IEBO
200
nAdc
Characteristic
OFF CHARACTERISTICS
300 ms; Duty Cycle
2.0%.
2479
MPQ3467
Symbol
Min
Typ
Max
Unit
hFE
20
VCE(sat)
0.23
0.5
Vdc
VBE(sat)
0.90
1.2
Vdc
fT
125
190
MHz
Cobo
10
25
pF
Cibo
55
80
pF
TurnOn Time
ton
40
ns
TurnOff Time
(IC = 500 mAdc, IB1 = IB2 = 50 mAdc)
toff
90
ns
Characteristic
ON CHARACTERISTICS
DC Current Gain(2)

2480
MPQ3467
1.6
100
IC = 10 IB1 = 10 IB2
VCC = 30 V
TJ = 25C
TJ = 125C
70
F = 10, 20
F = 10
50
F = 20
30
ts ts 1/8 tf
20
50
70
t sv, STORAGE TIME (ns)
200
100
200 300
500 700 1000
Figure 1. Storage Time Variation

with Temperature
hFE , MINIMUM CURRENT GAIN
70
1.4
F = 10
TJ = 25C
1.2
MAX
1.0
VBE(sat)
0.8
MIN
0.6
MAX VCE(sat)
0.4
0.2
0
50
70
100
200
300
500 700 1000
Figure 2. Limits of Saturation Voltage
TJ = 125C
50
VCE = 1.0 V
VCE = 2.0 V
TJ = 25C
30
TJ = 55C
20
10
50
70
100
200
300
500
700
1000
2481
MOTOROLA
Quad Core Driver Transistor
MPQ3725
NPN Silicon
14
13
12
11
10
NPN
MAXIMUM RATINGS
14
Rating
Symbol
Value
Unit
VCEO
40
Vdc
VCES
60
Vdc
VEBO
5.0
Vdc
IC
1.0
Adc

@ TA = 25C
Derate above 25C
One
Transistor
Four
Transistors
Equal Power
1.0
8.0
2.5
20
CASE 64606, STYLE 1

TO116
PD

Temperature Range
TJ, Tstg
Watts
mW/C
C
55 to +150
Characteristic
Symbol
RqJA
Thermal Resistance,
Junction to Ambient(1)
Max
Unit
One
Transistor
Effective
For Four
Transistors
125
50
C/W

Symbol
Min
Typ
Max
Unit

(IC = 10 mAdc, IB = 0)
V(BR)CEO
40
Vdc

(IC = 100 mAdc, VBE = 0)
V(BR)CES
60
Vdc

(IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
Vdc
ICBO
0.5
mAdc
Characteristic
OFF CHARACTERISTICS

(VCB = 40 Vdc, IE = 0)
1. RqJA is measured with the device soldered into a typical printed circuit board.
300 ms; Duty Cycle
2.0%.
REV 3
2482
MPQ3725
Symbol
Characteristic
Min
Typ
Max
35
25
75
45
200
Unit
DC Current Gain
hFE

VCE(sat)
0.32
0.45
Vdc

VBE(sat)
0.8
0.9
1.1
Vdc
fT
250
275
MHz
Cobo
5.1
10
pF
Cibo
62
80
pF
TurnOn Time
(IC = 500 mAdc, IB1 = 50 mAdc
VBE(off) = 3.8 Vdc)
ton
20
35
ns
TurnOff Time
(IC = 500 mAdc, IB1 = IB2 = 50 mAdc)
toff
50
60
ns


3.8 V
+30 V
15
1.0 k
43
+9.7 V
1.0 F
100
1.0 F
TO
SAMPLING
OSCILLOSCOPE
Zin 100 k
tr < 1.0 ns
0
PULSE GENERATOR
tr, tf 1.0 ns
PW 1.0 s
Zin = 50
DUTY CYCLE 2.0%
m
W
62
Figure 1. Switching Times Test Circuit
2483
MPQ3725
IC , COLLECTOR CURRENT (AMP)
2.0
1.0
10 ms
0.5
dc
0.3
0.2
TJ = 200C
0.1
SECOND BREAKDOWN LIMITED
THERMAL LIMITATION @ TC = 25C
PULSE DUTY CYCLE 10%
APPLICABLE TO RATED BVCEO
0.05
0.03
0.02
3.0
4.0
6.0
8.0 10
20
30
40
60
TYPICAL DC CHARACTERISTICS
400
1.4
1.2
200
V, VOLTAGE (VOLTS)
TJ = 25C
VCE = 1.0 V
TJ = 125C
25C
100
80
55C
60
40
1.0
0.8
0.6
0.4
0.2
20
50
100
200
500
10
1000
100
200
500
1000
+2.5
TJ = 25C
0.8
0.6
1000 mA
0.4
0
0.5
50
1.0
0.2
20
qV, TEMPERATURE COEFFICIENT (mV/ C)
10
2484
20
800 mA
500 mA
IC = 100 mA
300 mA
*APPLIES FOR IC/IB < hFE/2
+2.0
+1.5
+1.0
*qVC FOR VCE(sat)
+0.5
0
0.5
1.0
qVB FOR VBE
1.5
2.0
2.5
1.0
2.0
5.0
10
20
50
100
200
500
10
20
30
50
100
200 300
500
1000
MPQ3725
500
100
VCE = 10 Vdc
f = 100 MHz
TJ = 25C
300
TJ = 25C
70
Cib
50
C, CAPACITANCE (pF)
200
100
30
20
Cob
10
7.0
70
5.0
50
4.0
6.0
10
20
40
60
100
200
3.0
0.1
400
0.2
0.5
1.0
5.0
20
10
200
50
100
200
IC /IB = 10
TJ = 25C
100
tr @ VCC = 10 Vdc
tr @ VCC = 30 Vdc
10
3.0
2.0
10
20
30
50
ts @ IC/IB = 20
50
ts @ IC/IB = 10
30
20
td @ VBE(off) = 0 V
VBE(off) = 3.8 Vdc
VCC = 30 Vdc
5.0
tf @ IC/IB = 20
70
t, TIME (ns)
30
20
VCC = 10 Vdc
TJ = 25C
tf @ IC/IB = 10
100
50
t, TIME (ns)
2.0
10
200 300
100
500
10
1000
20
30
50
100
200 300
500
1000
I CES , COLLECTOR CUTOFF CURRENT ( m A)
1000
100
VCE = 60
VCE = 30
VCE = 10
10
1.0
0.1
0.01
0
20
40
60
80
100
120
140
160
180
200
Figure 11. Collector Cutoff Current
2485
MOTOROLA
Quad Memory Driver

Transistor
PNP Silicon
14
13
12
11
10
MPQ3762
PNP
14
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
40
Vdc
VCBO
40
Vdc
VEBO
5.0
Vdc
IC
1.5
Adc

@ TA = 25C
Derate above 25C
PD

@ TC = 25C
Derate above 25C
PD

Temperature Range
Each
Transistor
Four
Transistors
Equal Power
750
5.98
1700
13.6
mW
mW/C
1.25
10
3.2
25.6
Watts
mW/C
TJ, Tstg
CASE 64606, STYLE 1

TO116
55 to +150
Characteristic
Junction
to Case
Junction
to Ambient
Unit
Thermal Resistance(1)
Each Die
Effective, 4 Die
100
39
167
73.5
C/W
C/W
Coupling Factors
Q1Q4 or Q2Q3
Q1Q2 or Q3Q4
46
5.0
56
10
%
%

Symbol
Min
Typ
Max
Unit

(IC = 10 mAdc, IB = 0)
V(BR)CEO
40
Vdc

(IC = 10 mAdc, IE = 0)
V(BR)CBO
40
Vdc

(IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
Vdc

(VCB = 30 Vdc, IE = 0)
ICBO
100
nAdc

(VEB = 3.0 Vdc, IC = 0)
IEBO
100
nAdc
Characteristic
OFF CHARACTERISTICS
300 ms; Duty Cycle
2.0%.
2486
MPQ3762
Min
Typ
Max
35
30
20
70
65
35
0.3
0.6
0.55
0.9
0.9
1.0
1.25
1.4
fT
150
275
MHz
Cobo
9.0
15
pF
Cibo
55
80
pF
TurnOn Time
(VCC = 30 Vdc, IC = 1.0 Adc, IB1 = 100 mAdc, VBE(off) = 2.0 Vdc)
ton
50
ns
TurnOff Time
(VCC = 30 Vdc, IC = 1.0 Adc, IB1 = IB2 = 100 mAdc)
toff
120
ns
Characteristic
Symbol
Unit
DC Current Gain
(IC = 1.0 Adc, VCE = 2.0 Vdc)
hFE

(IC = 1.0 Adc, IB = 100 mAdc)
VCE(sat)

(IC = 1.0 Adc, IB = 100 mAdc)
VBE(sat)
Vdc
Vdc

2487
MPQ3762
1.6
100
IC = 10 IB1 = 10 IB2
VCC = 30 V
TJ = 25C
TJ = 125C
70
F = 10, 20
t sv, STORAGE TIME (ns)
200
F = 10
50
F = 20
30
ts ts 1/8 tf
20
50
70
hFE , MINIMUM CURRENT GAIN
F = 10
TJ = 25C
1.2
MAX
1.0
VBE(sat)
0.8
MIN
0.6
MAX VCE(sat)
0.4
0.2
0
50
100
200 300
500 700 1000
Figure 1. Storage Time Variation

with Temperature
70
1.4
70
100
200
300
500 700 1000
Figure 2. Limits of Saturation Voltage
TJ = 125C
50
VCE = 1.0 V
VCE = 2.0 V
TJ = 25C
30
TJ = 55C
20
10
50
70
100
200
300
500
700
1000
2488
MOTOROLA
Quad Amplifier Transistors
MPQ3798
MPQ3799*
PNP Silicon
14
13
12
11
10
PNP
MAXIMUM RATINGS
Rating
Symbol
MPQ3798
VCEO
40
VCBO
60
Vdc
VEBO
5.0
Vdc
IC
50
mAdc

@ TA = 25C(1)
Derate above 25C
PD

@ TC = 25C
Derate above 25C
PD

Temperature Range
MPQ3799
Unit
60
Vdc
14
1
Each
Transistor
Four
Transistors
Equal Power
0.5
4.0
0.9
7.2
Watts
mW/C
0.825
6.7
2.4
19.2
Watts
m/C
TJ, Tstg
CASE 64606, STYLE 1

TO116
55 to +150
Characteristic
RqJC
Junction
to Case
RqJA
Junction
to Ambient
Unit
Thermal Resistance
Each Die
Effective, 4 Die
151
52
250
139
C/W
C/W
Coupling Factors
Q1Q4 or Q2Q3
Q1Q2 or Q3Q4
34
2.0
70
26
%
%

Characteristic
Symbol
Min
Typ
Max
40
60
Unit
OFF CHARACTERISTICS
(IC = 10 mAdc, IB = 0)
V(BR)CEO
MPQ3798
MPQ3799
Vdc

(IC = 10 mAdc, IE = 0)
V(BR)CBO
60
Vdc

(IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
Vdc

(VCB = 50 Vdc, IE = 0)
ICBO
10
nAdc

(VEB = 3.0 Vdc, IC = 0)
IEBO
20
nAdc
1. Second breakdown occurs at power levels greater than 3 times the power dissipation rating.
300 ms; Duty Cycle
2.0%.
2489
MPQ3798 MPQ3799
Symbol
Min
Typ
Max
MPQ3798
MPQ3799
100
225
MPQ3798
MPQ3799
150
300
MPQ3798
MPQ3799
150
300
MPQ3798
MPQ3799
125
250
0.12
0.07
0.2
0.25
0.62
0.68
0.7
0.8
fT
60
250
MHz
Cobo
2.1
4.0
pF
Cibo
5.5
8.0
pF
2.5
1.5
Characteristic
Unit
ON CHARACTERISTICS
DC Current Gain
hFE

(IC = 1.0 mAdc, IB = 100 mAdc)
VCE(sat)

(IC = 1.0 mAdc, IB = 100 mAdc)
VBE(sat)
Vdc
Vdc

Noise Figure
(IC = 100 mAdc, VCE = 10 Vdc, RS = 3.0 k ohms,
f = 1.0 kHz)
2490
NF
MPQ3798
MPQ3799
dB
1000
1000
500
500
h FE , CURRENT GAIN
h FE , CURRENT GAIN
MPQ3798 MPQ3799
200
100
10
100
10
0.01
0.1
1.0
10
100
0.01
1.0
10
Figure 1. DC Current Gain versus

Collector Current
Figure 2. DC Current Gain versus

Collector Current
1.0
1.0
0.8
0.8
0.6
0.4
0.2
100
0.6
0.4
0.2
0
0.01
0.1
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
200
0.1
1.0
10
100
0
0.01
0.1
1.0
10
100
2491
MOTOROLA
Quad Amplifier Switching

Transistor
MPQ3904
NPN Silicon

14
13
12
11
10
NPN
MAXIMUM RATINGS
14
Rating
Symbol
Value
Unit
VCEO
40
Vdc
VCBO
60
Vdc
VEBO
6.0
Vdc
IC
200
mAdc

@ TA = 25C
Derate above 25C
PD

@ TC = 25C
Derate above 25C
PD

Temperature Range
Each
Transistor
Four
Transistors
Equal Power
500
4.0
900
7.2
mW
mW/C
825
6.7
2.4
19.2
Watts
mW/C
TJ, Tstg
CASE 64606, STYLE 1

TO116
55 to +150
Characteristic
Junction
to Case
Junction
to Ambient
Unit
Thermal Resistance
Each Die
Effective, 4 Die
151
52
250
139
C/W
C/W
Coupling Factors
Q1Q4 or Q2Q3
Q1Q2 or Q3Q4
34
2.0
70
26
%
%

Characteristic
Symbol
Min
Typ
Max
Unit

(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
Vdc

(IC = 10 mAdc, IE = 0)
V(BR)CBO
60
Vdc

(IE = 10 mAdc, IC = 0)
V(BR)EBO
6.0
Vdc

(VCB = 40 Vdc, IE = 0)
ICBO
50
nAdc

(VEB = 40 Vdc, IC = 0)
IEBO
50
nAdc
OFF CHARACTERISTICS
2492
MPQ3904
Characteristic
Symbol
Min
Typ
Max
30
50
75
90
160
200
Unit
DC Current Gain
hFE

VCE(sat)
0.1
0.2
Vdc

VBE(sat)
0.65
0.85
Vdc
fT
250
300
MHz
Cobo
2.0
4.0
pF
Cibo
4.0
8.0
pF
TurnOn Time
ton
37
ns
TurnOff Time
(IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc)
toff
136
ns

2493
MPQ3904
DUTY CYCLE = 2%
300 ns
+3 V
+10.9 V
10 < t1 < 500 ms

275
t1
DUTY CYCLE = 2%
+3 V
+10.9 V
275
10 k
10 k
0
0.5 V
CS < 4 pF*
< 1 ns
CS < 4 pF*
1N916
9.1 V
< 1 ns


TJ = 25C
TJ = 125C
10
5000
2000
5.0
Q, CHARGE (pC)
CAPACITANCE (pF)
VCC = 40 V
IC/IB = 10
3000
7.0
Cibo
3.0
Cobo
2.0
1000
700
500
QT
300
200
QA
1.0
0.1
2494
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30 40
100
70
50
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
MPQ3904
500
500
IC/IB = 10
100
70
tr @ VCC = 3.0 V
50
30
20
VCC = 40 V
IC/IB = 10
300
200
t r, RISE TIME (ns)
TIME (ns)
300
200
40 V
100
70
50
30
20
15 V
10
7
5
10
2.0 V
td @ VOB = 0 V
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
Figure 6. Rise Time
IC/IB = 10
200
500
ts = ts 1/8 tf
IB1 = IB2
VCC = 40 V
IB1 = IB2
300
200
IC/IB = 20
IC/IB = 20
200
500
300
200
7
5
100
70
IC/IB = 20
50
IC/IB = 10
30
20
100
70
50
10
10
7
5
7
5
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
IC/IB = 10
30
20
1.0
2.0 3.0
5.0 7.0 10
20
30
200
50 70 100
Figure 8. Fall Time


IC = 1.0 mA
10
14
f = 1.0 kHz

IC = 0.5 mA
8
6

IC = 50 A
4
2
0
0.1

IC = 100 A
0.2
0.4
1.0
2.0
IC = 1.0 mA
12
12
IC = 0.5 mA
10
IC = 50 mA
8
IC = 100 mA
6
4
2
4.0
10
20
40
100
0.1
0.2
0.4
1.0
2.0
4.0
10
20
f, FREQUENCY (kHz)
Figure 9.
Figure 10.
40
100
2495
MPQ3904
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25C)
100
h fe , CURRENT GAIN
300
200
100
70
50
30
0.1
0.2
0.3
0.5
1.0
2.0 3.0
5.0
50
20
10
5
2
1
10
0.1
0.2
10
5.0
2.0
1.0
0.5
0.1
0.2
0.3
0.5
1.0
2.0 3.0
5.0
10
5.0
10
20
0.2
0.3
0.5
1.0
2.0 3.0
5.0
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
10
0.1
0.2
0.3
0.5
1.0
2.0 3.0

2.0
TJ = +125C
VCE = 1.0 V
+25C
1.0
0.7
55C
0.5
0.3
0.2
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
2496
MPQ3904
1.0
TJ = 25C
0.8
IC = 1.0 mA
10 mA
30 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
1.0
1.2
TJ = 25C
0.8
VBE @ VCE =1.0 V
0.6
0.4
qVC FOR VCE(sat)

0
55C TO +25C
0.5
55C TO +25C
1.0
+25C TO +125C
qVB FOR VBE(sat)
1.5
0.2
0
+25C TO +125C
0.5
COEFFICIENT (mV/ C)
V, VOLTAGE (VOLTS)
1.0
1.0
2.0
5.0
10
20
50
100
200
2.0
20
40
60
80
100
120
140
160
180 200
2497
MOTOROLA
Quad Amplifier Switching

Transistor
MPQ3906
PNP Silicon

14
13
12
11
10
PNP
MAXIMUM RATINGS
14
Rating
Symbol
Value
Unit
VCEO
40
Vdc
VCBO
40
Vdc
VEBO
5.0
Vdc
IC
200
mAdc

@ TA = 25C
Derate above 25C
PD

@ TC = 25C
Derate above 25C
PD

Temperature Range
Each
Transistor
Four
Transistors
Equal Power
500
4.0
900
7.2
mW
mW/C
825
6.7
2.4
19.2
Watts
mW/C
TJ, Tstg
CASE 64606, STYLE 1

TO116
55 to +150
Characteristic
Junction
to Case
Junction
to Ambient
Unit
Thermal Resistance
Each Die
Effective, 4 Die
151
52
250
139
C/W
C/W
Coupling Factors
Q1Q4 or Q2Q3
Q1Q2 or Q3Q4
34
2.0
70
26
%
%

Characteristic
Symbol
Min
Typ
Max
Unit

(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
Vdc

(IC = 10 mAdc, IE = 0)
V(BR)CBO
40
Vdc

(IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
Vdc

(VCB = 30 Vdc, IE = 0)
ICBO
50
nAdc

(VEB = 4.0 Vdc, IC = 0)
IEBO
50
nAdc
OFF CHARACTERISTICS
2498
MPQ3906
Symbol
Characteristic
Min
Typ
Max
40
60
75
160
180
200
Unit
DC Current Gain
hFE

VCE(sat)
0.1
0.25
Vdc

VBE(sat)
0.65
0.85
Vdc
fT
200
250
MHz
Cobo
3.3
4.5
pF
Cibo
4.8
10
pF
TurnOn Time
ton
43
ns
TurnOff Time
(IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc)
toff
155
ns
+9.1 V
< 1 ns

3V
3V
275
275
< 1 ns
+0.5 V
10 k
10 k
0
CS < 4 pF*
10.6 V
1N916
10 < t1 < 500 ms
300 ns
DUTY CYCLE = 2%
DUTY CYCLE = 2%
t1
CS < 4 pF*
10.9 V


2499
MPQ3906
10
5000
7.0
3000
2000
Cobo
5.0
Q, CHARGE (pC)
CAPACITANCE (pF)
TJ = 25C
TJ = 125C
Cibo
3.0
2.0
VCC = 40 V
IC/IB = 10
1000
700
500
300
200
QT
QA
1.0
0.1
0.2 0.3
0.5 0.7 1.0

2.0 3.0 5.0 7.0 10
100
70
50
20 30 40
1.0
2.0 3.0
5.0 7.0 10
20 30 50 70 100
200
500
500
IC/IB = 10
300
200
VCC = 40 V
IB1 = IB2
300
200
tr @ VCC = 3.0 V
15 V
30
20
TIME (ns)
IC/IB = 20
100
70
50
100
70
50
30
20
IC/IB = 10
40 V
10
7
5
2.0 V
td @ VOB = 0 V
1.0
2500
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
10
7
5
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
Figure 6. Fall Time
200
MPQ3906

IC = 1.0 mA
12
f = 1.0 kHz
4.0
IC = 0.5 mA
3.0

IC = 50 A
2.0
IC = 100 A
1.0
0
0.1
0.2
0.4
IC = 1.0 mA
10
5.0
IC = 0.5 mA
8
6
IC = 50 mA
IC = 100 mA
1.0 2.0 4.0

10
f, FREQUENCY (kHz)
20
40
100
0.1
0.2
0.4
1.0 2.0
4.0
10
20
Figure 7.
40
100
Figure 8.
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25C)
100
300
200
100
70
50
70
50
30
20
10
7
30
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
0.1
0.2

10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
0.3
0.2
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
2501
MPQ3906

2.0
TJ = +125C
VCE = 1.0 V
+25C
1.0
0.7
55C
0.5
0.3
0.2
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0 10
20
30
70
50
100
200

1.0
TJ = 25C
0.8
IC = 1.0 mA
10 mA
30 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
TJ = 25C
V, VOLTAGE (VOLTS)
0.8
1.0
VBE @ VCE = 1.0 V
0.6
0.4
0.2
1.0
2.0
50
5.0
10
20
2502
100
200
1.0
0.5
qVC FOR VCE(sat)
+25C TO +125C
55C TO +25C
0.5
+25C TO +125C
1.0
55C TO +25C
qVB FOR VBE(sat)
1.5
2.0
20
40
60
80 100 120 140
160
180 200
MOTOROLA

Transistors
NPN/PNP Silicon
14
13
12
11
10
MPQ6001, MPQ6002
TYPE A
14
13
12
11
10
MPQ6001
MPQ6002
MPQ6502
for PNP transistors
COMPLEMENTARY
MPQ6502
TYPE B
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
30
Vdc
VCBO
60
Vdc
VEBO
5.0
Vdc
IC
500
mAdc
Each
Transistor
@ TA = 25C(1)
MPQ6001, MPQ6002,
MPQ6502
Derate above 25C
MPQ6001, MPQ6002,
MPQ6502
PD

@ TC = 25C
MPQ6001, MPQ6002,
MPQ6502
Derate above 25C
MPQ6001, MPQ6002,
MPQ6502
PD
14
1
CASE 64606, STYLE 1

TO116
Four
Transistors
Equal Power
Watts
0.65
1.25
mW/C
5.18
10
Watts
1.0
3.0
mW/C
8.0

Temperature Range
TJ, Tstg
24
55 to +150
Characteristic
Junction to
Case
Junction to
Ambient
Unit
C/W
Thermal Resistance
Each Die
Effective, 4 Die
MPQ6001, MPQ6002, MPQ6502

MPQ6001, MPQ6002, MPQ6502
125
41.6
193
100
Coupling Factors
Q1Q4 or Q2Q3
Q1Q2 or Q3Q4
MPQ6001, MPQ6002, MPQ6502

MPQ6001, MPQ6002, MPQ6502
30
20
60
24
1. Voltage and Current are negative for PNP devices.
REV 3
2503
MPQ6001 MPQ6002 MPQ6502

Characteristic
Symbol
Min
Typ
Max
Unit

(IC = 10 mAdc, IB = 0)
V(BR)CEO
30
Vdc

(IC = 10 mAdc, IE = 0)
V(BR)CBO
60
Vdc

(IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
Vdc

(VCB = 50 Vdc, IE = 0)
ICBO
30
nAdc

(VEB = 3.0 Vdc, IC = 0)
IEBO
30
nAdc
MPQ6001
MPQ6002, MPQ6502
25
50
MPQ6001
MPQ6002, MPQ6502
35
75
MPQ6001
MPQ6002, MPQ6502
40
100
MPQ6001
MPQ6002, MPQ6502
20
30
0.4
1.4
1.3
2.0
200
350
6.0
4.5
8.0
8.0
20
17
30
30
OFF CHARACTERISTICS
ON CHARACTERISTICS
DC Current Gain(2)
hFE

VCE(sat)

VBE(sat)
Vdc
Vdc

Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 2.0 Vdc, IC = 0, f = 1.0 MHz)
fT
Cobo
PNP
NPN
pF
Cibo
PNP
NPN
MHz
pF
TurnOn Time
(VCC = 30 Vdc, VEB = 0.5 Vdc, IC = 150 mAdc,
IB1 = 15 mAdc, Figure 1)
ton
30
ns
TurnOff Time
toff
225
ns
2504
MPQ6001 MPQ6002 MPQ6502

NPN DATA
4.0
3.0
VCE = 1.0 V
VCE = 10 V
TJ = 150C
2.0
+25C
1.0
0.7
55C
0.5
0.3
0.2
0.5
0.7
1.0
2.0
3.0
7.0
5.0
10
20
50
30
100
70
300
200
500

1.4
+1.6
q V , TEMPERATURE COEFFICIENT (mV/ C)
TJ = 25C
V, VOLTAGE (VOLTS)
1.2
1.0
0.8
0.6
VBE @ VCE = 1.0 V
0.4
0.2
0
0.5
1.0
5.0
2.0
10
20
100
50
200
+25C TO +150C
+0.8
qVC FOR VCE(sat)

55C TO +25C
0.8
qVB FOR VBE
1.6
2.4
0.5
500
1.0
5.0
2.0
10
20
50
100
200
500
NOISE FIGURE
(VCE = 10 Vdc, TA = 25C)
6.0
10
f = 1.0 kHz
4.0
IC = 10 A
RS = 4.3 k
3.0
m
W
2.0
IC = 100 A
RS = 1.0 k
1.0
0
0.1
100 A
IC = 1.0 mA
8.0
5.0
10 A
6.0
4.0
2.0
0
0.2
0.5
1.0
2.0
5.0
10
20
50
100
0.1
0.2
0.5
1.0
2.0
5.0
10
20
f, FREQUENCY (kHz)
50
100
2505
MOTOROLA
Quad Darlington
Transistor
MPQ6426
NPN Silicon
14
13
12
11
10
NPN
MAXIMUM RATINGS
14
Rating
Symbol
Value
Unit
VCEO
30
Vdc
VCBO
40
Vdc
VEBO
12
Vdc
IC
500
mAdc
Each Die
Four Die
Equal
Power
CASE 64606, STYLE 1

TO116
Total Device Dissipation @ TA = 25C(1)

Derate above 25C
PD
500
4.0
900
7.2
mW
mW/C

Derate above 25C
PD
825
6.7
2400
19.2
mW
mW/C

Temperature Range
TJ, Tstg
55 to +150
Characteristic
Junction to
Case
Junction to
Ambient
Unit
Thermal Resistance
Each Die
Effective, 4 Die
151
52
250
139
C/W
C/W
Coupling Factors
Q1Q4 or Q2Q3
Q1Q2 or Q3Q4
34
2.0
70
26
%
%

Characteristic
Symbol
Min
Max
30
40
12
100
100
Unit
OFF CHARACTERISTICS
(IC = 10 mAdc, IB = 0)
V(BR)CEO

(IC = 100 mAdc, IE = 0)
V(BR)CBO

(IE = 10 mAdc, IC = 0)
V(BR)EBO

(VCB = 30 Vdc, IE = 0)
ICBO

(VEB = 10 Vdc, IC = 0)
IEBO
Vdc
Vdc
Vdc
nAdc
nAdc
300 ms; Duty Cycle
2.0%.
2506
MPQ6426
Characteristic
Symbol
Min
Max
5000
10,000
1.5
2.0
125
8.0
15
Unit
DC Current Gain
hFE

VCE(sat)

VBE(on)
Vdc
Vdc

fT
Output Capacitance
(VCB = 10 Vdc, IE = 0, f =1.0 MHz)
Cobo
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
MHz
pF
pF
2507
MPQ6426
(VCE = 5.0 Vdc, TA = 25C)
500
2.0
100
i n , NOISE CURRENT (pA)
200
e n , NOISE VOLTAGE (nV)
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
RS 0
10 A
50
100 A
20
IC = 1.0 mA
10
IC = 1.0 mA
0.3
0.2
100 A
0.1
0.07
0.05
10 A
0.03
0.02
5.0
50 100 200
10 20
500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
10 20
500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
f, FREQUENCY (Hz)
14
200
IC = 10 A
70
12

100
50
30
50 100 200
f, FREQUENCY (Hz)
V T , TOTAL WIDEBAND NOISE VOLTAGE (nV)
1.0
0.7
0.5
100 A
10
10 A
8.0
100 A
6.0
IC = 1.0 mA
4.0
20
1.0 mA
10
1.0
2.0
0
2.0
5.0
10
20
50
100
200
1.0
500 1000
5.0
2.0
10
20
50
100
200
500 1000
RS, SOURCE RESISTANCE (k )
RS, SOURCE RESISTANCE (k )
4.0
h fe , SMALLSIGNAL CURRENT GAIN
20
C, CAPACITANCE (pF)
TJ = 25C
10
Cib
7.0
Cob
5.0
3.0
2.0
0.04
2508
VCE = 5.0 V
f = 100 MHz
TJ = 25C
2.0
1.0
0.8
0.6
0.4
0.2
0.1
0.2
0.4
1.0
2.0
4.0
10
20
40
0.5
1.0
2.0
5.0
10
20
50
100
200
500
MOTOROLA

Transistor
MPQ6700
NPN/PNP Silicon
14
13
12
11
10
MPQ6502
For Specifications,
See MPQ6001 Data
COMPLEMENTARY
MPQ6600A1
TYPE B
For Specifications,
See MPQ6100A Data
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
40
Vdc
VCBO
40
Vdc
VEBO
5.0
Vdc
IC
200
mAdc

@ TA = 25C(1)
Derate above 25C
PD

@ TC = 25C
Derate above 25C
PD

Temperature Range
Voltage and current are

negative for PNP transistors
Each
Transistor
Four
Transistors
Equal Power
500
4.0
900
7.2
mW
mW/C
825
6.7
2400
19.2
mW
mW/C
TJ, Tstg
14
1
CASE 64606, STYLE 1

TO116
TYPE B
55 to +150
Characteristic
Junction to
Case
Junction to
Ambient
Unit
Thermal Resistance
Each Die
Effective, 4 Die
151
52
250
139
C/W
C/W
Coupling Factors
Q1Q4 or Q2Q3
Q1Q2 or Q3Q4
34
2.0
70
26
%
%

Characteristic
Symbol
Min
Max
40
40
5.0
50
50
Unit
OFF CHARACTERISTICS
(IC = 10 mAdc, IB = 0)
V(BR)CEO

(IC = 10 mAdc, IE = 0)
V(BR)CBO

(IE = 10 mAdc, IC = 0)
V(BR)EBO

(VCB = 30 Vdc, IE = 0)
ICBO

(VEB = 4.0 Vdc, IC = 0)
IEBO
Vdc
Vdc
Vdc
nAdc
nAdc
300 ms; Duty Cycle
2.0%.
2509
MPQ6700
Symbol
Characteristic
Min
Max
30
50
70
0.25
0.9
200
4.5
10
8.0
Unit
DC Current Gain
hFE

VCE(sat)

VBE(sat)
Vdc
Vdc

fT
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f =1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
2510
MHz
Cobo
pF
Cibo
PNP
NPN
pF
MPQ6700
500
500
300
300
TJ = 125C
200
200
25C
100
70
50
55C
30
20
10
7.0
5.0
0.2
VCE = 1.0 V
VCE = 5.0 V
0.5
1.0
2.0
5.0
10
20
50
100
200
30
20
VCE = 1.0 V
VCE = 5.0 V
0.5
1.0 2.0
5.0
10
50 100 200
20
1.0
TJ = 25C
0.8
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
55C
0.8
0.6
0.4
0.2
0.5
1.0
2.0
5.0
10
20
50
0.6
0.4
0.2
100
0
0.2
200
0.5
1.0
2.0
5.0
10
20
Figure 3. ON Voltage
50 100 200
+2.0
q V , TEMPERATURE COEFFICIENT (mV/C)
+2.0
25C
TJ = 25C
* APPLIES FOR IC/IB hFE/2.0

+1.0
25C TO 125C
*qVC FOR VCE(sat)

0
55C TO 25C
25C TO 125C
1.0
qVB FOR VBE
55C TO 25C
2.0
3.0
0.2
100
70
50
10
7.0
5.0
0.2
1.0
0
0.2
TJ = 125C
0.5
1.0
2.0
5.0
10
20
50
100
200

+1.0
25C TO 125C
*qVC FOR VCE(sat)

0
55C TO 25C
1.0
2.0
3.0
0.2
25C TO 125C
qVB FOR VBE
0.5
1.0
55C TO 25C
2.0
5.0
10
20
50 100 200
2511
1.0
VCE , COLLECTOR EMITTER VOLTAGE (VOLTS)
MPQ6700
TJ = 25C
0.8
0.6
IC = 1.0 mA
10 mA
50 mA
100 mA
0.4
0.2
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0
10 20
50 100
IC = 1.0 mA
50 mA
100 mA
0.4
0.2
0
0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
50
500
IC/IB = 10
TJ = 25C
100
70
50
300
200
tr @ VCC = 3.0 V
30
40 V
VBE(off) = 0
20
30
50 70 100
100
70
50
30
Tr @ VCC = 3.0 V
10
7.0
5.0
2.0 3.0 5.0 7.0 10
2.0 V
5.0 7.0 10
IC/IB = 10
TJ = 25C
tr @ VCC = 40 V
20
200
2.0 V
td @ VBE(off) = 0
20
30
50 70 100
200
500
500
ts = ts = 1/8 tf
VCC = 3.0 V
IB1 = IB2
TJ = 25C
300
200
300
200
IC/IB = 10
20
t, TIME (ns)
100
70
50
IC/IB = 20
tf @ IC/IB = 10
30
20
10
7.0
5.0
2.0 3.0
10
7.0
5.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
ts = ts 1/8 tf
VCC = 40 V
IB1 = IB2
IC/IB = 20
IC/IB = 10
100
70
50
20
2512
10 mA
t, TIME (ns)
t, TIME (ns)
0.6
20
t, TIME (ns)
0.8
300
200
30
TJ = 25C
500
10
7.0
5.0
2.0 3.0
1.0
IC/IB = 20
tf @ IC/IB = 10
5.0 7.0 10
20
30
50 70 100
200
500
TJ = 25C
VCE = 20 V
f = 100 MHz
300
200
150
100
70
50
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
MPQ6700
TJ = 25C
VCE = 20 V
f = 100 MHz
500
300
200
100
70
0.3 0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
7.0
10
C, CAPACITANCE (pF)
3.0
Cib
2.0
1.5
5.0
Cib
3.0
2.0
Cob
Cob
1.0
0.7
0.06 0.1
TJ = 25C
7.0
TJ = 25C
5.0
C, CAPACITANCE (pF)
700
0.2
0.4 0.6 1.0
2.0
4.0 6.0 10
20
40 60
1.0
0.04
0.1 0.2 0.4
1.0 2.0
4.0
10
20
40
2513
MOTOROLA

Transistor
MPQ6842
NPN/PNP Silicon
14
13
12
11
10

COMPLEMENTARY
TYPE B
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
30
Vdc
VCBO
30
Vdc
VEBO
4.0
Vdc
IC
200
mAdc

@ TA = 25C(1)
Derate above 25C
PD

@ TC = 25C
Derate above 25C
PD

Temperature Range
Each
Transistor
Four
Transistors
Equal Power
500
4.0
900
7.2
mW
mW/C
825
6.7
2400
19.2
mW
mW/C
TJ, Tstg
14
1
CASE 64606, STYLE 1

TO116
TYPE B
55 to +150
Characteristic
Junction to
Case
Junction to
Ambient
Unit
Thermal Resistance
Each Die
Effective, 4 Die
151
52
250
139
C/W
C/W
Coupling Factors
Q1Q4 or Q2Q3
Q1Q2 or Q3Q4
34
2.0
70
26
%
%

Characteristic
Symbol
Min
Typ
Max
30
30
4.0
50
50
Unit
OFF CHARACTERISTICS
(IC = 10 mAdc, IB = 0)
V(BR)CEO

(IC = 10 mAdc, IE = 0)
V(BR)CBO

(IE = 10 mAdc, IC = 0)
V(BR)EBO

(VCB = 20 Vdc, IE = 0)
ICBO

(VEB = 3.0 Vdc, IE = 0)
IEBO
Vdc
Vdc
Vdc
nAdc
nAdc
300 ms; Duty Cycle
2.0%.
2514
MPQ6842
Symbol
Characteristic
Min
Typ
Max
30
50
70
0.05
0.15
0.65
0.9
200
350
3.0
4.5
5.0
4.0
10
8.0
15
6.0
25
15
5.0
25
35
5.0
10
20
Unit
DC Current Gain
hFE

(IC = 0.5 mAdc, IB = 0.05 mAdc, 0C T 70C)
VCE(sat)

(IC = 0.5 mAdc, IB = 0.05 mAdc)
VBE(sat)
Vdc
Vdc

fT
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f =1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
MHz
Cobo
pF
Cibo
PNP
NPN
pF
SWITCHING CHARACTERISTICS (TA = 25C, VCC = 5.0 Vdc)

Propagation Delay Time
ns
tPLH
tPHL
Rise Time
(0.3 V to 4.7 V, TP3 or TP4)
tr
Fall Time
(4.7 V to 0.3 V, TP3 or TP4)
tf
ns
ns
2515
MPQ6842
500
500
300
300
TJ = 125C
200
200
25C
100
70
50
55C
30
20
10
7.0
5.0
0.2
VCE = 1.0 V
VCE = 5.0 V
0.5
1.0
2.0
5.0
10
20
50
100
200
VCE = 1.0 V
VCE = 5.0 V
0.5
1.0 2.0
5.0
10
50 100 200
20
1.0
TJ = 25C
0.8
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
30
20

0.6
0.4
0.2
0.5
1.0
2.0
5.0
10
20
50
0.6
0.4
0.2
100
0
0.2
200
0.5
1.0
2.0
4.0
10
20
40
100
+2.0
+2.0
55C
0.8

+1.0
25C TO 125C
*qVC FOR VCE(sat)

0
55C TO 25C
25C TO 125C
1.0
qVB FOR VBE
55C TO 25C
2.0
2516
25C
TJ = 25C
3.0
0.2
100
70
50
10
7.0
5.0
0.2
1.0
0
0.2
TJ = 125C
0.5
1.0
2.0
5.0
10
20
50
100
200

+1.0
25C TO 125C
*qVC FOR VCE(sat)

0
55C TO 25C
1.0
2.0
3.0
0.2
25C TO 125C
qVB FOR VBE
0.5
1.0
55C TO 25C
2.0
5.0
10
20
50 100 200
1.0
MPQ6842
TJ = 25C
0.8
0.6
IC = 1.0 mA
10 mA
50 mA
100 mA
0.4
0.2
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0
10 20
1.0
TJ = 25C
0.8
0.6
IC = 1.0 mA
10 mA
50 mA
100 mA
0.4
0.2
50 100
0
0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
50
VCC
+5 V
33 pF
1k
6
4.7 k
0.1 mF CERAMIC
1/4 MC3001 (74H08)
22
TP3
68 pF
10
160 pF
TP1
1
10 k
PULSE
GENERATOR
0 TO 5 V
51
tr, tf 2 ns
PW 200 ns
PERIOD 1000 ns
33 pF
VCC
+5 V
1 k 10
NOTES:
1. Unless otherwise noted, all resistors carbon composition
1/ W 5%, all capacitors dipped mica 2%.
4
2. Use short interconnect wiring with good power and
ground buses.
3. TP1 thru TP4 are coaxial connectors to accept scope
probe tip and provide a good ground.
4. Device under test is MPQ6842.
5. 160 pF load does not include stray or scope probe
capacitance.
6. Scope probe resistance > 5 k .
Scope probe capacitance < 10 pF.
0.1 mF CERAMIC
9
4.7 k
8
TP1 OR TP2
1/4 MC3000 (74H00)
50%
22
TP4
68 pF
TP2
10
13
tPLH
160 pF
14
10 k
tPHL
12
4.7 V
TP3 OR TP4
tf
50%
0.3 V
tr
Figure 9. Switching Times Test Circuit and Waveforms
2517
MOTOROLA
MPQ7041
MPQ7042
MPQ7043*
Quad Amplifier
Transistors
NPN Silicon
14
13
12
11
10
COMPLEMENTARY

6
TYPE B
MAXIMUM RATINGS
Rating
Symbol
MPQ7041
MPQ7042
MPQ7043
Unit
VCEO
150
200
250
Vdc
VCBO
150
200
250
Vdc
VEBO
5.0
Vdc
IC
500
mAdc
Collector CurrentContinuous

@ TA = 25C
Derate above 25C
PD

@ TC = 25C
Derate above 25C
PD

Temperature Range
14
Each Die
Four Die
Equal Power
750
5.98
1700
13.6
mW
mW/C
1.25
10
3.2
25.6
Watts
mW/C
TJ, Tstg
CASE 64606, STYLE 1

TO116
55 to +150
Characteristic
Junction to
Case
Junction to
Ambient
Unit
Thermal Resistance
Each Die
Effective, 4 Die
100
39
167
73.5
C/W
C/W
Coupling Factors
Q1Q4 or Q2Q3
Q1Q2 or Q3Q4
46
5.0
56
10
%
%

Characteristic
Symbol
Min
Typ
Max
150
200
250
150
200
250
5.0
100
100
100
Unit
OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0)

(IC = 100 mAdc, IE = 0)
V(BR)CEO
MPQ7041
MPQ7042
MPQ7043
V(BR)CBO
MPQ7041
MPQ7042
MPQ7043

(IE = 100 mAdc, IC = 0)
(VCB = 120 Vdc, IE = 0)
(VCB = 150 Vdc, IE = 0)
(VCB = 180 Vdc, IE = 0)
Vdc
Vdc
V(BR)EBO
Vdc
ICBO
MPQ7041
MPQ7042
MPQ7043
nAdc
2518
MPQ7041 MPQ7042 MPQ7043

Symbol
Characteristic
Min
Max
Max
25
40
40
45
60
80
0.3
0.5
0.7
0.9
50
80
2.5
5.0
40
50
Unit
ON CHARACTERISTICS
DC Current Gain
hFE

VCE(sat)

VBE(sat)
Vdc
Vdc

fT
MHz
Output Capacitance
(VCB = 20 Vdc, IE = 0, f =1.0 MHz)
Cobo
Input Capacitance
(VEB = 3.0 Vdc, IC = 0, f = 1.0 MHz)
Cibo
pF
pF
DC CHARACTERISTICS
1.4
200
VCE = 10 V
TJ = 125C
TJ = 25C
V, VOLTAGE (VOLTS)
1.2
25C
100
70
55C
50
30
20
1.0
1.0
0.8
0.6
VBE(on) @ IC/IB = 10 V
0.4
0.2
5.0
0
2.0
3.0
5.0 7.0 10
20
30
50 70 100
5.0 7.0 10
2.0 3.0
1.0
20
30
50 70 100
2.5
IC/IB = 10
2.0
1.5
1.0
25C TO 125C
qVC FOR VCE(sat)
0.5
0
55C TO 25C
0.5
1.0
55C TO 125C
qVB FOR VBE
1.5
2.0
2.5
1.0
2.0 3.0
5.0 7.0
10
20
30
50
70
100
2519
MOTOROLA

Transistor
NPN/PNP Silicon
14
13
12
11
10
COMPLEMENTARY
MPQ7051
TYPE B
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
150
Vdc
VCBO
150
Vdc
VEBO
5.0
Vdc
IC
500
mAdc
Each Die
Four Die
Equal
Power
14
1
CASE 64606, STYLE 1

TO116
TYPE B

Derate above 25C
PD
750
5.98
1700
13.6
mW
mW/C

Derate above 25C
PD
1.25
10
3.2
25.6
Watts
mW/C

Temperature Range
TJ, Tstg
55 to +150
Characteristic
Junction to
Case
Junction to
Ambient
Unit
Thermal Resistance
Each Die
Effective, 4 Die
100
39
167
73.5
C/W
C/W
Coupling Factors
Q1Q4 or Q2Q3
Q1Q2 or Q3Q4
46
5.0
56
10
%
%

Characteristic
Symbol
Min
Max
150
150
5.0
250
100
Unit
OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO

(IC = 100 mAdc, IE = 0)
V(BR)CBO

(IE = 100 mAdc, IC = 0)
V(BR)EBO

(VCB = 120 Vdc, IE = 0)
ICBO

(VEB = 3.0 Vdc, IC = 0)
IEBO
Vdc
Vdc
Vdc
nAdc
nAdc
2520
MPQ7051
Symbol
Characteristic
Min
Max
25
35
25
0.7
0.9
50
6.0
50
75
Unit
ON CHARACTERISTICS
DC Current Gain
hFE

VCE(sat)

IC = 20 mAdc, IB = 2.0 mAdc)
VBE(sat)
Vdc
Vdc

fT
Output Capacitance
(VCB = 20 Vdc, IC = 0, f =1.0 MHz)
Input Capacitance
(VEB = 3.0 Vdc, IC = 0, f = 1.0 MHz)
MHz
Cobo
pF
Cibo
NPN
PNP
pF
2521
MPQ7051
DC CHARACTERISTICS
200
200
TJ = 125C
VCE = 10 V
VCE = 10 V
25C
100
70
55C
50
30
TJ = 125C
25C
100
55C
70
50
30
20
1.0
2.0
3.0
5.0 7.0 10
20
30
20
1.0
50 70 100
2.0 3.0
5.0 7.0 10
TJ = 25C
TJ = 25C
1.2
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
1.2
1.0
0.8
0.6
VBE(on) @ IC/IB = 10 V
0.4
0.2
1.0
2.0 3.0
5.0 7.0 10
20
1.0
0.8
0.6
0.4
5.0
0.2
5.0
0
30
0
1.0
50 70 100
2.0 3.0
5.0 7.0 10
20 30
50 70 100
2.5
2.5
50 70 100
1.4
1.4
IC/IB = 10
2.0
1.5
1.0
25C TO 125C
qVC FOR VCE(sat)
0.5
0
55C TO 25C
0.5
1.0
55C TO 125C
qVB FOR VBE
1.5
2.0
2.5
1.0
2522
20 30
2.0 3.0
5.0 7.0
10
20
30
50
70
100
IC/IB = 10
2.0
1.5
25C TO 125C
1.0
0.5
qVC FOR VCE(sat)

55C TO 25C
0
0.5
1.0
1.5
55C TO 125C
qVB FOR VBE
2.0
2.5
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
MOTOROLA
Quad Amplifier
Transistors
PNP Silicon
14
13
12
11
10
MPQ7091
MPQ7093*
COMPLEMENTARY

1
TYPE B
MAXIMUM RATINGS
Rating
Symbol
MPQ7091
MPQ7093
Unit
VCEO
150
250
Vdc
VCBO
150
250
Vdc
VEBO
5.0
IC
500

@ TA = 25C
Derate above 25C
PD

@ TC = 25C
Derate above 25C
PD

Temperature Range
Vdc
mAdc
Each Die
Four Die
Equal
Power
750
5.98
1700
13.6
mW
mW/C
1.25
10
3.2
25.6
Watts
mW/C
TJ, Tstg
14
55 to +150
CASE 64606, STYLE 1

TO116
Characteristic
Junction to
Case
Junction to
Ambient
Unit
Thermal Resistance
Each Die
Effective, 4 Die
100
39
167
73.5
C/W
C/W
Coupling Factors
Q1Q4 or Q2Q3
Q1Q2 or Q3Q4
46
5.0
56
10
%
%

Characteristic
Symbol
Min
Typ
Max
150
250
150
250
5.0
250
250
100
Unit
OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0)
(IC = 100 mAdc, IE = 0)
V(BR)CEO
MPQ7091
MPQ7093
V(BR)CBO
MPQ7091
MPQ7093

(IE = 100 mAdc, IC = 0)
(VCB = 120 Vdc, IE = 0)
Vdc
Vdc
V(BR)EBO
Vdc
ICBO
MPQ7091
MPQ7093

(VEB = 3.0 Vdc, IC = 0)
nAdc
IEBO
nAdc
2523
MPQ7091 MPQ7093
Symbol
Characteristic
Min
Max
Max
25
35
25
40
55
50
0.3
0.5
0.7
0.9
50
70
3.0
5.0
60
75
Unit
ON CHARACTERISTICS
DC Current Gain
hFE

VCE(sat)

VBE(sat)
Vdc
Vdc

fT
Output Capacitance
(VCB = 20 Vdc, IE = 0, f =1.0 MHz)
Cobo
Input Capacitance
(VEB = 3.0 Vdc, IC = 0, f = 1.0 MHz)
Cibo
MHz
pF
pF
DC CHARACTERISTICS
1.4
200
VCE = 10 V
TJ = 125C
TJ = 25C
25C
100
V, VOLTAGE (VOLTS)
1.2
55C
70
50
30
20
1.0
1.0
0.8
0.6
0.4
2.0 3.0
20 30
5.0 7.0 10
0
1.0
50 70 100
5.0
0.2
2.0 3.0
5.0 7.0 10
20 30
50 70 100
2.5
IC/IB = 10
2.0
1.5
25C TO 125C
1.0
0.5
qVC FOR VCE(sat)

55C TO 25C
0
0.5
1.0
1.5
55C TO 125C
qVB FOR VBE
2.0
2.5
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
2524
MOTOROLA
Chopper Transistor
MPS404A
PNP Silicon
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
35
Vdc
VCBO
40
Vdc
VEBO
25
Vdc
IC
150
mAdc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
Watts
mW/C
TJ, Tstg
55 to +150
Symbol

Temperature Range
CASE 2904, STYLE 1

TO92 (TO226AA)
Characteristic
Max
Unit
RqJA(1)
200
C/W
RqJC
83.3
C/W

Characteristic
Symbol
Min
Max
Unit

(IC = 10 mAdc, IB = 0)
V(BR)CEO
35
Vdc

(IC = 10 mAdc, IE = 0)
V(BR)CBO
40
Vdc

(IE = 10 mAdc, IC = 0)
V(BR)EBO
25
Vdc

(VCB = 10 Vdc, IE = 0)
ICBO
100
nAdc

(VBE = 10 Vdc, IC = 0)
IEBO
100
nAdc
OFF CHARACTERISTICS
2525
MPS404A
Characteristic
Symbol
Min
Max
Unit
DC Current Gain
hFE
30
400

VCE(sat)
0.15
0.2

VBE(sat)
0.85
1.0
fob
4.0
MHz
Cobo
20
pF
NORMAL MODE
INVERTED MODE
TJ = 25C
ON CHARACTERISTICS
Vdc
Vdc

CommonBase Cutoff Frequency
(IC = 1.0 mAdc, VCB = 6.0 Vdc)
Output Capacitance
(VCB = 6.0 Vdc, IE = 0, f = 1.0 MHz)
VBC, BASECOLLECTOR VOLTAGE (VOLTS)

VEC , EMITTERCOLLECTOR VOLTAGE (mV)

VCE , COLLECTOREMITTER VOLTAGE (mV)
100
NORMAL MODE
INVERTED MODE
80
TJ = 25C
60
40
IC/IB = 2.0
20
0
1.0
VEC(sat) @ IE/IB = 2.0
2.0 3.0
5.0 7.0 10
20 30
IE, EMITTER CURRENT (mA)
50 70 100
Figure 1. CollectorEmitter Voltage
2526
0.9
0.82
0.74
0.66
VBC(sat) @ IE/IB = 2
0.58
0.50
1.0
2.0 3.0 5.0 7.0 10

20 30
50 70 100
Figure 2. Base On Voltage
MPS404A
NORMAL MODE
INVERTED MODE
10
200
TJ = 125C
25C
100
80
7.0
60
55C
40
30
20
5.0
25C
55C
3.0
2.0
1.5
10
1.0
2.0 3.0
5.0 7.0 10
20 30
1.0
1.0
50 70 100
5.0 7.0 10
20 30
50 70 100
Figure 3. DC Current Gain @ VCE = 0.15 Vdc
Figure 4. DC Current Gain @ VEC = 0.15 Vdc
600
10
400
TJ = 125C
7.0
TJ = 125C
300
200
2.0 3.0
25C
100
80
55C
60
25C
5.0
55C
3.0
2.0
40
30
1.0
2.0 3.0
5.0 7.0 10
20 30
1.0
1.0
50 70 100
0.5
TJ = 25C
0.4
0.3
5.0 7.0 10
20 30
50 70 100
Figure 6. DC Current Gain @ VEC = 1.0 Vdc

VEC , EMITTERCOLLECTOR VOLTAGE (VOLTS)
Figure 5. DC Current Gain @ VCE = 1.0 Vdc
2.0 3.0
0.5
TJ = 25C
0.4
IC = 2.0 mA
10 mA
50 mA
0.3
IE = 0.5 mA 2.0 mA
50 mA
10 mA
0.2
0.2
0.1
0.1
0
0.005 0.01 0.02
0.05 0.1 0.2

0.5
1.0
2.0
5.0
0
0.05 0.1
0.2
0.5 1.0 2.0

5.0
10
20
50
Figure 8. Emitter Saturation Region
2527
MPS404A
70
50
20
NOTE: The dynamic resistance between the emitter and
NOTE: collector is measured with the device operated in
NOTE: the Inverted Mode.
TJ = 25C
C, CAPACITANCE (pF)
rec(on), EMITTERCOLLECTOR ON
RESISTANCE (OHMS)
100
Ie = 100 A RMS
f = 1.0 kHz
TJ = 25C
IE = 0
30
20
7.0
Cob
5.0
Cib
10
3.0
7.0
5.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
2.0
0.05 0.1
5.0 7.0 10
0.2
0.5
1.0 2.0
5.0
10
Figure 9. EmitterCollector On Resistance
2.0 k
20
50
1.0 k
VCC = 10 V
IC/IB = 0
TJ = 25C
1.0 k
700
500
VCC = 10 V
IC/IB = 0
IB1 = IB2
TJ = 25C
700
ts
500
300
200
t, TIME (ns)
t, TIME (ns)
10
tr
100
70
50
tf
300
200
30
20
1.0
2.0 3.0 5.0 7.0 10

20 30
50 70 100
RBB
1.0 k
Vin
50 70 100
VCC
(6.0 V)
1.0 k
TO SCOPE
RC (560 )
C1
RB
(0250 pF)
10 k
RB*
(5.6 k)
INPUT Vin
51
Vin
(Volts)
VBB
(Volts)
ton, td and tr
12
+1.4
toff, ts and tf
+20.6
11.6
Voltages and resistor values shown

are for IC = 10 mA. IC/IB = 10 and IB1
= IB2. Resistor values changed to obtain curves in Figures 11 and 12.
2528
2.0 3.0 5.0 7.0 10

20 30
VCC = 10 V
VBB
0.1 F
100
1.0
MEASUREMENT PROCEDURE
C1 is increased until the toff time of
the output waveform is decreased to
0.2 s, QS is then calculated by
QS = C1 Vin.
QS3 or QS7 by BLine Electronics
or equivalent may also be used.
OUTPUT
VOLTAGE WAVEFORMS
0
6.0 V
Vout
6.0 V
>5.0 s
Vin
tr, tf < 15 ns
10%
toff
Figure 14. Stored Base Charge Test Circuit
MOTOROLA
NPN
MPS650
MPS651 *
PNP
MPS750
MPS751 *
COLLECTOR
3
COLLECTOR
3
2
BASE
2
BASE
NPN
PNP

1
EMITTER
1
EMITTER
*Motorola Preferred Devices
MAXIMUM RATINGS
Symbol
MPS650
MPS750
MPS651
MPS751
Unit
VCE
40
60
Vdc
VCB
60
80
Vdc
Rating
VEB
5.0
Vdc
IC
2.0
Adc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
Watt
mW/C
TJ, Tstg
55 to +150

Temperature Range
1
2
CASE 2904, STYLE 1

TO92 (TO226AA)
Symbol
Max
Unit
Characteristic
RqJA
200
C/W
RqJC
83.3
C/W
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

Characteristic
Symbol
Min
Max
40
60
60
80
5.0
0.1
0.1
0.1
Unit
OFF CHARACTERISTICS
(IC = 10 mAdc, IB = 0)
(IC = 100 Adc, IE = 0 )
V(BR)CEO
MPS650, MPS750
MPS651, MPS751
V(BR)CBO
MPS650, MPS750
MPS651, MPS751

(IC = 0, IE = 10 Adc)
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
Vdc
V(BR)EBO
Vdc
Adc
ICBO
MPS650, MPS750
MPS651, MPS751

(VEB = 4.0 V, IC = 0)
IEBO
Vdc
Adc
2529
NPN MPS650 MPS651 PNP MPS750 MPS751

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
75
75
75
40
0.5
0.3
Unit
DC Current Gain
(IC = 50 mA, VCE = 2.0 V)
(IC = 500 mA, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
(IC = 2.0 A, VCE = 2.0 V)
hFE

(IC = 2.0 A, IB = 200 mA)
(IC = 1.0 A, IB = 100 mA)
VCE(sat)
Vdc
BaseEmitter On Voltage (IC = 1.0 A, VCE = 2.0 V)
VBE(on)
1.0
Vdc
Base Emitter Saturation Voltage (IC = 1.0 A, IB = 100 mA)
VBE(sat)
1.2
Vdc
fT
75
MHz

NPN
PNP
300
250
270
TJ = 125C
210
180
25C
150
120
55C
90
125
100
55C
75
30
25
50
25C
150
50
20
0
10 20
100 200
500 1.0 A 2.0 A 4.0 A
Figure 1. MPS650, MPS651

Typical DC Current Gain
PNP
2.0
1.8
1.8
1.6
1.6
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
NPN
1.4
1.2
1.0
0.8
0.6
50 10 200 500 1.0 A 2.0 A 4.0 A

0
IC, COLLECTOR
CURRENT (mA)

Typical DC Current Gain
2.0
0.4
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.2
0
50
100
200
500
1.0 A

On Voltages
2530
VCE = 2.0 V
175
60
0
10
TJ = 125C
200
240
225
VCE = 2.0 V
2.0 A
4.0 A
50
10
20
50
1.0 A
0 IC, COLLECTOR
0
0
CURRENT
(mA)
2.0 A
4.0 A

On Voltages
NPN

1.0
0.9
0.8
TJ = 25C
0.7
0.6
0.5
0.4
0.3
IC = 10 mA IC = 100 mA IC = 500 mA
IC = 2.0 A
0.2
0.1
0
0.05 0.1 0.2
0.5 1.0 2.0 5.0 10 20

50 100 200 500
PNP
1.0
0.9
TJ = 25C
0.8
0.7
0.6
0.5
0.4
IC = 500 mA
0.3
0.2
0.1
IC = 10 mA
NPN
PNP
10
4.0
4.0
2.0
1.0 ms
1.0
0.5
0.05
0.02
0.01
1.0
50 100 200 500

Collector Saturation Region
10
0.1
IC = 100 mA
0
0.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20
5

Collector Saturation Region
0.2
IC = 2.0 A
TA = 25C
100 s
1.0 ms
1.0
MPS65
0
MPS65
1
TC = 25C
0.5
0.2
0.1
0.05
WIRE LIMIT
THERMAL LIMIT
2.0
5.0
10
20
50
100 s
2.0
0.02
100
Figure 7. MPS650, MPS651 SOA,

Safe Operating Area
0.01
1.0
TA = 25C
MPS75
0
MPS75
1
TC = 25C
WIRE LIMIT
THERMAL LIMIT
2.0
5.0
10
20
50
100
Figure 8. MPS750, MPS751 SOA,

Safe Operating Area
2531
MOTOROLA
MPS918*
MPS3563
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
1
MAXIMUM RATINGS
Rating
Symbol
MPS918
MPS3563
Unit
VCEO
15
12
Vdc
VCBO
30
30
Vdc
VEBO
3.0
2.0
CASE 2904, STYLE 1

TO92 (TO226AA)
Vdc
IC
50
mAdc

Derate above 25C
PD
350
2.8
mW
mW/C

Derate above 25C
PD
0.85
6.8
Watts
mW/C
TJ, Tstg
55 to +150

Temperature Range
Characteristic
Symbol
Max
Unit
RqJA(1)
357
C/W
RqJC
147
C/W

Characteristic
Symbol
Min
Max
15
12
30
30
3.0
2.0
10
50
Unit
OFF CHARACTERISTICS
(IC = 3.0 mAdc, IB = 0)
V(BR)CEO
MPS918
MPS3563

(IC = 1.0 mAdc, IE = 0)
(IC = 100 mAdc, IE = 0)
Vdc
V(BR)CBO
MPS918
MPS3563

(IE = 10 mAdc, IC = 0)
Vdc
V(BR)EBO
MPS918
MPS3563

(VCB = 15 Vdc, IE = 0)
Vdc
ICBO
MPS918
MPS3563
nAdc
300 ms; Duty Cycle
1.0%.
2532
MPS918 MPS3563
Characteristic
Symbol
Min
Max
Unit
20
20
200
VCE(sat)
0.4
Vdc
VBE(sat)
1.0
Vdc
600
600
1500
3.0
1.7
1.7
Cibo
2.0
pF
hfe
20
250
NF
6.0
dB
15
14
Pout
30
mW
25
ON CHARACTERISTICS
DC Current Gain(2)
MPS918
MPS3563

MPS918

MPS918
hFE

MPS918
MPS3563
Output Capacitance
(VCB = 0 Vdc, IE = 0, f = 1.0 MHz)
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
MPS918
MPS918
MPS3563
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
MPS918

MPS3563
Noise Figure
(IC = 1.0 mAdc, VCE = 6.0 Vdc, RS = 400 k, f = 60 MHz)
MPS918
fT
MHz
Cobo
pF
FUNCTIONAL TEST
CommonEmitter Amplifier Power Gain
(Gfd + Gre
20 dB)
MPS918
MPS3563
Power Output
MPS918
Oscillator Collector Efficiency

(IC = 8.0 mAdc, VCB = 15 Vdc, Pout = 30 mW, f = 500 MHz)
MPS918
Gpe
dB
2533
MOTOROLA
MPS2222
MPS2222A*
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
MPS2222
MPS2222A
Unit
VCEO
30
40
Vdc
VCBO
60
75
Vdc
VEBO
5.0
6.0
Vdc
IC
600
mAdc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
Watts
mW/C
TJ, Tstg
55 to +150

Temperature Range
1
2
CASE 2904, STYLE 1

TO92 (TO226AA)
Characteristic
Symbol
Max
Unit
RqJA
200
C/W
RqJC
83.3
C/W

Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
(IC = 10 mAdc, IB = 0)
MPS2222
MPS2222A
V(BR)CEO
30
40
Vdc

(IC = 10 mAdc, IE = 0)
MPS2222
MPS2222A
V(BR)CBO
60
75
Vdc

(IE = 10 mAdc, IC = 0)
MPS2222
MPS2222A
V(BR)EBO
5.0
6.0
Vdc

ICEX
10
nAdc
MPS2222A

(VCB = 50 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0)
(VCB = 50 Vdc, IE = 0, TA = 125C)
(VCB = 50 Vdc, IE = 0, TA = 125C)
MPS2222
MPS2222A
MPS2222
MPS2222A
0.01
0.01
10
10

(VEB = 3.0 Vdc, IC = 0)
IEBO
100
nAdc
MPS2222A
Base Cutoff Current

IBL
20
nAdc
MPS2222A
Adc
ICBO
2534
MPS2222 MPS2222A
Characteristic
Symbol
Min
Max
Unit
35
50
75
35
100
50
30
40
300
MPS2222
MPS2222A
0.4
0.3
MPS2222
MPS2222A
1.6
1.0
MPS2222
MPS2222A
0.6
1.3
1.2
MPS2222
MPS2222A
2.6
2.0
250
300
8.0
30
25
2.0
0.25
8.0
1.25
8.0
4.0
50
75
300
375
5.0
25
35
200
rbCc
150
ps
NF
4.0
dB
( CC = 30 Vdc, VBE(off) = 0.5 Vdc,

(V
IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1)
td
10
ns
tr
25
ns
( CC = 30 Vdc, IC = 150 mAdc,

(V
IB1 = IB2 = 15 mAdc) (Figure 2)
ts
225
ns
tf
60
ns
ON CHARACTERISTICS
DC Current Gain
(IC = 150 mAdc, VCE = 10 Vdc)(1)
(IC = 150 mAdc, VCE = 1.0 Vdc)(1)
(IC = 500 mAdc, VCE = 10 Vdc)(1)
hFE
MPS2222A only
MPS2222
MPS2222A

VCE(sat)

Vdc
VBE(sat)
Vdc

fT
MPS2222
MPS2222A
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
MPS2222
MPS2222A
Input Impedance
MPS2222A
MPS2222A

MPS2222A
MPS2222A

MPS2222A
MPS2222A
Output Admittance
MPS2222A
MPS2222A

MPS2222A
Noise Figure
MPS2222A
Delay Time
Rise Time
Storage Time
Fall Time
MHz
pF
pF
hie
X 10 4
hre
hfe
mmhos
hoe
MPS2222A only

300 ms, Duty Cycle
2.0%.
2535
MPS2222 MPS2222A
+ 30 V
+ 30 V
1.0 to 100 s,
DUTY CYCLE 2.0%
+16 V
0
2 V
200
1.0 to 100 s,
DUTY CYCLE 2.0%
+16 V
200
0
1 k
< 2 ns
1k
14 V
CS* < 10 pF
< 20 ns
CS* < 10 pF
1N914
4 V
*Total shunt capacitance of test jig, connectors, and oscilloscope.
1000
700
500
TJ = 125C
300
200
25C
100
70
50
55C
30
VCE = 1.0 V
VCE = 10 V
20
10
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
20 30
50
70
100
200
300
500 700 1.0 k
1.0
TJ = 25C
0.8
0.6
IC = 1.0 mA
10 mA
150 mA
500 mA
0.4
0.2
0
0.005
0.01
0.02 0.03
0.05
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
20
30
50
2536
MPS2222 MPS2222A
200
500
IC/IB = 10
TJ = 25C
tr @ VCC = 30 V
td @ VEB(off) = 0
30
20
10
7.0
5.0
200
ts = ts 1/8 tf
100
70
50
tf
30
20
10
7.0
5.0
3.0
2.0
5.0 7.0
10
200 300
20 30
50 70 100
5.0 7.0 10
500
20 30
50 70 100
200
RS = OPTIMUM
RS = SOURCE
RS = RESISTANCE
IC = 1.0 mA, RS = 150

500 A, RS = 200
100 A, RS = 2.0 k
50 A, RS = 4.0 k
6.0
f = 1.0 kHz
8.0
500
10
8.0
4.0
2.0
IC = 50 A
100 A
500 A
1.0 mA
6.0
4.0
2.0
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
20
100 200
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 k 100 k
Ceb
10
7.0
5.0
Ccb
3.0
0.5 0.7 1.0

2.0 3.0 5.0 7.0 10
20 30
50
f, FREQUENCY (kHz)
20
0.2 0.3
0
50
50 100
30
CAPACITANCE (pF)
300
10
2.0
0.1
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25C
300
t, TIME (ns)
t, TIME (ns)
100
70
50
500
VCE = 20 V
TJ = 25C
300
200
100
70
50
1.0
2.0
3.0
5.0 7.0 10
20 30
50
70 100
2537
MPS2222 MPS2222A
1.0
+0.5
TJ = 25C
0
COEFFICIENT (mV/ C)
V, VOLTAGE (VOLTS)
0.8
1.0 V
0.6
0.4
0.2
RqVC for VCE(sat)
0.5
1.0
1.5
RqVB for VBE
2.0
2.5
0.1 0.2
50 100 200
0.5 1.0 2.0 5.0 10 20
2538
500 1.0 k
0.1 0.2
0.5
1.0 2.0
5.0 10 20
50 100 200
500
MOTOROLA
Switching Transistors
MPS2369
MPS2369A*
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
15
Vdc
VCES
40
Vdc
VCBO
40
Vdc
VEBO
4.5
Vdc
IC
200
mAdc

Derate above 25C
PD
625
5.0
mW
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit
RqJA
200
C/W

Temperature Range
CASE 2904, STYLE 1

TO92 (TO226AA)
Characteristic

Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)CEO
15
Vdc
V(BR)CES
40
Vdc
V(BR)CBO
40
Vdc
V(BR)EBO
4.5
Vdc
0.4
30
0.4
OFF CHARACTERISTICS
(IC = 10 mAdc, IB = 0)
MPS2369A

(IC = 10 Adc, VBE = 0)
MPS2369,A

(IC = 10 mAdc, IE = 0)
MPS2369,A

(IE = 10 mAdc, IC = 0)
MPS2369,A

(VCB = 20 Vdc, IE = 0)
(VCB = 20 Vdc, IE = 0, TA = 125C)
MPS2369,A

(VCE = 20 Vdc, VBE = 0)
MPS2369,A
Adc
ICBO
ICES
Adc
2539
MPS2369 MPS2369A
Characteristic
Symbol
Min
Typ
Max
Unit
20
40
40
20
30
20
20
120
120
0.25
0.20
0.30
0.25
0.50
0.7
0.5
0.85
1.02
1.15
1.60
Cobo
4.0
pF
hfe
5.0
ts
5.0
13
ns
ton
8.0
12
ns
toff
10
18
ns
ON CHARACTERISTICS
DC Current Gain(1)
hFE
MPS2369A
MPS2369
MPS2369
MPS2369A
MPS2369A
MPS2369A
MPS2369
MPS2369A
VCE(sat)
MPS2369
MPS2369A
MPS2369A
MPS2369A
MPS2369A
Vdc
VBE(sat)
MPS2369
MPS2369A
MPS2369A
MPS2369A
MPS2369A
Vdc

Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
MPS2369,A

MPS2369,A
Storage Time
(IB1 = IB2 = IC = 10 mAdc) (Figure 3)
TurnOn Time
(Figure 1)
TurnOff Time
(VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc,
IB2 = 1.5 mAdc) (Figure 2)
2540
MPS2369,A
MPS2369,A
MPS2369,A
MPS2369 MPS2369A
3.0 V
t1
+10.6 V
0
1.5 V
270
3.3 k
< 1.0 ns
CS* < 4.0 pF

DUTY CYCLE = 2.0%
Figure 1. ton Circuit
+10.75 V
t1
3.0 V
270
0
4.15 V
< 1.0 ns
3.3 k

DUTY CYCLE = 2.0%
CS* < 4.0 pF
Figure 2. toff Circuit
+6.0 V
t1
10 V
980
0
4.0 V
< 1.0 ns
DUTY CYCLE = 2.0%
500
CS* < 3.0 pF
Figure 3. Storage Test Circuit
* Total shunt capacitance of test jig and connectors.
2541
MOTOROLA
MPS2907
MPS2907A*
PNP Silicon
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
MPS2907
MPS2907A
Unit
VCEO
40
60
Vdc
VCBO
60
VEBO
5.0
Vdc
IC
600
mAdc

@ TA = 25C
Derate above 25C
PD
625
5.0
mW
mW/C

@ TC = 25C
Derate above 25C
PD
1.5
12
Watts
mW/C
500 to +150
TJ, Tstg
CASE 2904, STYLE 1

TO92 (TO226AA)
Vdc

Temperature Range
Characteristic
Symbol
Max
Unit
RqJA
200
C/W
RqJC
83.3
C/W

Symbol
Min
Max
Unit
V(BR)CEO
40
60
Vdc

(IC = 10 mAdc, IE = 0)
V(BR)CBO
60
Vdc

(IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
Vdc
ICEX
50
nAdc
0.02
0.01
20
10
50
Characteristic
OFF CHARACTERISTICS
(IC = 10 mAdc, IB = 0)
MPS2907
MPS2907A

(VCB = 50 Vdc, IE = 0)
(VCB = 50 Vdc, IE = 0, TA = 150C)
Base Current
Adc
ICBO
MPS2907
MPS2907A
MPS2907
MPS2907A
IB
nAdc
2542
MPS2907 MPS2907A
Characteristic
Symbol
Min
Max
Unit
35
75
50
100
75
100
100
30
50
300
0.4
1.6
1.3
2.6
fT
200
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
8.0
pF
Input Capacitance
(VEB = 2.0 Vdc, IC = 0, f = 1.0 MHz)
Cibo
30
pF
ton
45
ns
td
10
ns
tr
40
ns
toff
100
ns
ts
80
ns
tf
30
ns
ON CHARACTERISTICS
DC Current Gain
hFE
MPS2907
MPS2907A
MPS2907
MPS2907A
MPS2907
MPS2907A
MPS2907, MPS2907A
MPS2907
MPS2907A

(IC = 150 mAdc, VCE = 10 Vdc)(1)
(IC = 500 mAdc, VCE = 10 Vdc)(1)
VCE(sat)

VBE(sat)
Vdc
Vdc

Current Gain Bandwidth Product(1), (2)
TurnOn Time
Delay Time

IB1 = 15
15 mAdc)
Ad ) (Figures
(Fi
1 and
d 5)
Rise Time
TurnOff Time
Storage Time
Fall Time

Ad ) (Fi
(Figure 2)

300 ms, Duty Cycle
2.0%.
INPUT
Zo = 50
PRF = 150 PPS
RISE TIME 2.0 ns
P.W. < 200 ns
30 V
200
1.0 k
TO OSCILLOSCOPE
RISE TIME 5.0 ns
50
16 V
INPUT
Zo = 50
PRF = 150 PPS
RISE TIME 2.0 ns
P.W. < 200 ns
200 ns
+15 V
6.0 V
1.0 k
1.0 k
0
30 V
50
37
TO OSCILLOSCOPE
RISE TIME 5.0 ns
1N916
200 ns
2543
MPS2907 MPS2907A
3.0
VCE = 1.0 V
VCE = 10 V
2.0
TJ = 125C
25C
1.0
55C
0.7
0.5
0.3
0.2
0.1
0.2 0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
50 70 100
200 300
500
1.0
0.8
IC = 1.0 mA
10 mA
100 mA
500 mA
0.6
0.4
0.2
0
0.005
0.01
0.02 0.03 0.05 0.07 0.1
0.2
0.3 0.5 0.7 1.0

3.0
2.0
5.0 7.0 10
20 30
50
500
tr
100
70
50
30
20
td @ VBE(off) = 0 V
7.0
5.0
3.0
5.0 7.0 10
2.0 V
20 30
50 70 100
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25C
200
tf
100
70
50
30
ts = ts 1/8 tf
20
10
2544
300
VCC = 30 V
IC/IB = 10
TJ = 25C
t, TIME (ns)
t, TIME (ns)
300
200
200 300 500
10
7.0
5.0
5.0 7.0 10
20 30
50 70 100
200 300 500
MPS2907 MPS2907A
NOISE FIGURE
10
10
8.0
8.0
IC = 1.0 mA, Rs = 430

500 A, Rs = 560
50 A, Rs = 2.7 k
100 A, Rs = 1.6 k
6.0
4.0
2.0
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
20
50
C, CAPACITANCE (pF)
50
100
200
500 1.0 k 2.0 k
5.0 k 10 k
20 k
f, FREQUENCY (kHz)
20
Ceb
10
7.0
5.0
Ccb
3.0
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
20 30
50 k
400
300
200
100
80
VCE = 20 V
TJ = 25C
60
40
30
20
1.0 2.0
5.0
10
20
50
100 200
500 1000
+0.5
1.0
TJ = 25C
0.6
COEFFICIENT (mV/ C)
0.8
V, VOLTAGE (VOLTS)
IC = 50 A
100 A
500 A
1.0 mA
4.0
100
30
2.0
0.1
6.0
2.0
f = 1.0 kHz
0.4
0.2
RqVC for VCE(sat)

0.5
1.0
1.5
RqVB for VBE
2.0
0
0.1 0.2
0.5 1.0 2.0 5.0 10 20
50 100 200
500
2.5
0.1 0.2 0.5 1.0 2.0
5.0 10 20
50 100 200 500
2545
MOTOROLA
PNP Silicon
MPS3638A
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
25
Vdc
VCES
25
Vdc
VCBO
25
Vdc
VEBO
4.0
Vdc
IC
500
mAdc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
Watts
mW/C
TJ, Tstg
55 to +150

Temperature Range
CASE 2904, STYLE 1

TO92 (TO226AA)
Characteristic
Symbol
Max
Unit
RqJA(1)
200
C/W
RqJC
83.3
C/W

Characteristic
Symbol
Min
Max
Unit

(IC = 100 mAdc, VBE = 0)
V(BR)CES
25
Vdc
Collector Emitter Sustaining Voltage(2)

(IC = 10 mAdc, IB = 0)
VCEO(sus)
25
Vdc

(IC = 100 mAdc, IE = 0)
V(BR)CBO
25
Vdc

(IE = 100 mAdc, IC = 0)
V(BR)EBO
4.0
Vdc
0.035
2.0
OFF CHARACTERISTICS
mAdc

(VCE = 15 Vdc, VBE = 0)
(VCE = 15 Vdc, VBE = 0, TA = 65C)
ICES

(VEB = 3.0 V, IC = 0)
IEBO
35
nA
IB
0.035
mAdc
Base Current
(VCE = 15 Vdc, VBE = 0)
300 ms; Duty Cycle
2.0%.
(Replaces MPS3638/D)
2546
MPS3638A
Characteristic
Symbol
Min
Max
Unit
80
100
100
20
0.25
1.0
0.80
1.1
2.0
150
10
25
2000
15
100
1.2
td
20
ns
tr
70
ns
ts
140
ns
Fall Time
( CC = 10 Vdc, IC = 300 mAdc,

(V
IB1 = 30 mAdc, IB2 = 30 mAdc)
tf
70
ns
TurnOn Time
ton
75
ns
TurnOff Time
(IC = 300 mAdc, IB1 = 30 mAdc, IB2 = 30 mAdc)
toff
170
ns
DC Current Gain
hFE

VCE(sat)

VBE(sat)
Vdc
Vdc

(VCE = 3.0 Vdc, IC = 50 mAdc, f = 100 MHz)
fT
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
Input Impedance
hie

hre

hfe
Output Admittance
hoe
MHz
pF
pF
k
X 10 4
mmhos
Delay Time
Rise Time
Storage Time
(VCC = 10 Vdc
Vdc, IC = 300 mAdc
mAdc, IB1 = 30 mAdc)
2547
MPS3638A
30 V
30 V
200
< 2 ns
200
< 20 ns
+2 V
+14 V
0
0
1.0 k
16 V
1.0 k
CS* < 10 pF
10 to 100 s,
DUTY CYCLE = 2%
16 V
CS* < 10 pF
1.0 to 100 s,
DUTY CYCLE = 2%
+ 4.0 V
25C
100C
30
10
7.0
5.0
VCC = 30 V
IC/IB = 10
Ceb
3.0
Q, CHARGE (nC)
CAPACITANCE (pF)
20
10
7.0
Ccb
5.0
2.0
1.0
0.7
0.5
QT
0.3
QA
0.2
2.0
0.1
0.2 0.3
2.0 3.0 5.0 7.0 10

0.5 0.7 1.0
2548
20
30
0.1
10
20
200
30
50 70 100
300
500
MPS3638A
TRANSIENT CHARACTERISTICS (Continued)
100C
25C
100
100
IC/IB = 10
70
70
50
tr @ VCC = 30 V
tr @ VCC = 10 V
td @ VBE(off) = 2 V
td @ VBE(off) = 0
30
20
t, TIME (ns)
VCC = 30 V
IC/IB = 10
50
30
20
10
10
7.0
7.0
5.0
5.0
10
20
30
50
70
200
100
300
500
10
20
30
50
70
100
200
Figure 6. Rise Time
300
500
200
IC/IB = 10
100
IC/IB = 20
70
50
IB1 = IB2
ts = ts 1/8 tf
30
20
10
20
30
50
70
100
200
300
500
2549
MPS3638A
NOISE FIGURE
Bandwidth = 1.0 Hz
10
10
f = 1 kHz
8
8
IC = 1.0 mA, RS = 430
IC = 500 A, RS = 560
IC = 50 A, RS = 2.7 k
IC = 100 A, RS = 1.6 k
0
0.01 0.02 0.05 0.1 0.2
IC = 50 A
100 A
500 A
1.0 mA
0
0.5 1.0 2.0 5.0
10
20
50
100
50
100
200
500
1k
2k
5k
10 k 20 k
f, FREQUENCY (kHz)
50 k
h PARAMETERS
VCE = 10 Vdc, f = 1.0 kHz, TA = 25C
selected from the 2N4402 line, and the same units were
used to develop the correspondinglynumbered curves on
each graph.
100 k
700
50 k
hfe , CURRENT GAIN
500
300
200
100
2N4402 UNIT 1
2N4402 UNIT 2
70
50
1000
2N4402 UNIT 1
2N4402 UNIT 2
20 k
10 k
5k
2k
1k
500
200
30
0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
100
5.0 7.0 10
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
500
0.3
10
5.0
2N4402 UNIT 1
2N4402 UNIT 2
2.0
1.0
0.5
0.2
2550
0.2
20
0.1
0.1
0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
100
50
20
10
5.0
2N4402 UNIT 1
2N4402 UNIT 2
2.0
1.0
0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
MPS3638A
3.0
VCE = 1.0 V
VCE = 10 V
2.0
TJ = 125C
25C
1.0
55C
0.7
0.5
0.3
0.2
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0 10
20
30
70
50
100
200
300
500
1.0
0.8
0.6
IC = 1.0 mA
10 mA
100 mA
500 mA
0.4
0.2
0
0.005
0.01
0.02
0.03
0.05 0.07 0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
5.0
7.0
10
20
30
50
0.5
TJ = 25C
0.8
0.6
COEFFICIENT (mV/ C)
VOLTAGE (VOLTS)
1.0
0.4
0.2
qVC for VCE(sat)
0.5
1.0
1.5
qVS for VBE
2.0
0
0.1 0.2
0.5
50 100 200
1.0 2.0
5.0 10 20
500
2.5
0.1 0.2
0.5
50 100 200
1.0 2.0 5.0 10 20
500
2551
MOTOROLA
MPS3640
PNP Silicon
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
12
Vdc
VCBO
12
Vdc
VEBO
4.0
Vdc
IC
80
mAdc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
Watts
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit

Temperature Range
CASE 2904, STYLE 1

TO92 (TO226AA)
Characteristic
RqJA
200
C/W
RqJC
83.3
C/W

Characteristic
Symbol
Min
Max
Unit
V(BR)CES
12
Vdc
VCEO(sus)
12
Vdc

(IC = 100 mAdc, IE = 0)
V(BR)CBO
12
Vdc

(IE = 100 mAdc, IC = 0)
V(BR)EBO
4.0
Vdc
0.01
1.0
10
OFF CHARACTERISTICS
(IC = 100 Adc, VBE = 0)
(IC = 10 mAdc, IB = 0)

(VCE = 6.0 Vdc, VBE = 0)
(VCE = 6.0 Vdc, VBE = 0, TA = 65C)
Base Current
(VCE = 6.0 Vdc, VEB = 0)
2552
Adc
ICES
IB
nAdc
MPS3640
Characteristic
Symbol
Min
Max
Unit
30
20
120
0.2
0.6
0.25
0.75
0.75
0.95
1.0
1.5
fT
500
MHz
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Cobo
3.5
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
3.5
pF
td
10
ns
Rise Time
(VCC = 6.0 Vdc, IC = 50 mAdc, VBE(off) = 1.9 Vdc,

IB1 = 5.0
5 0 mAdc)
Ad )
tr
30
ns
Storage Time
ts
20
ns
tf
12
ns
25
60
35
75
DC Current Gain
hFE

VCE(sat)

VBE(sat)
Vdc
Vdc

Delay Time
Fall Time
TurnOn Time
ton
TurnOff Time
toff
ns
VBB = +1.9 V VCC = 6.0 V

1.0 k
0
ns
0.1 F
680
VBB = 6.0 V
110
VCC = 1.5 V
5.0 k
Vout
5.0 V
0.1 F
5.0 k
130
Vout
Vin
6.8 V
TO SAMPLING SCOPE
PULSE SOURCE
51
INPUT Z 100 k
RISE TIME 1.0 ns
RISE TIME 1.0 ns
PULSE WIDTH 100 ns
Zin = 50 OHMS
FALL TIME 1.0 ns
Vin
0
TO SAMPLING SCOPE
PULSE SOURCE
51
INPUT Z 100 k
RISE TIME 1.0 ns
RISE TIME 1.0 ns
PULSE WIDTH 200 ns
Zin = 50 OHMS
FALL TIME 1.0 ns
Figure 1.
Figure 2.
2553
MPS3640
200
1.4
1.2
TJ = 125C
100
25C
70
50
V, VOLTAGE (VOLTS)
VCE = 1.0 V
55C
30
TJ = 25C
1.0
0.8

0.6
0.4
20
0.2
10
0.1 0.2
5.0 10 20
0.5 1.0 2.0
50
0
0.1 0.2
100
+0.5
1.0
TJ = 25C
0.8
IC = 1.0 mA
5.0 mA
20 mA
80 mA
0.6
0.4
0.2
0
0.01 0.02
0.05 0.1 0.2

0.5 1.0
2.0
5.0
100
55C to 25C
0.5
1.0
25C to 125C
1.5
55C to 25C
RVB for VBE

2.0
0.1 0.2
10
25C to 125C
RVC for VCE(sat)
0.5 1.0 2.0

5.0 10 20
50
100
5.0
2000
TJ = 25C
f = 100 MHz
TJ = 25C
VCE = 10 V
3.0
C, CAPACITANCE (pF)
50
0.5 1.0 2.0 5.0 10 20

1000
1.0 V
800
600
400
2.0
Cobo
Cibo
1.0
0.7
200
1.0
2554
2.0 3.0
5.0 7.0 10
20 30
50 70 100
0.5
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
MOTOROLA
MPS3646
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
1
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
15
Vdc
VCES
40
Vdc
VCBO
40
Vdc
VEBO
5.0
Vdc

10 ms Pulse
IC
300
500
mAdc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
Watts
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit
RqJA
200
C/W
RqJC
83.3
C/W

Temperature Range
CASE 2904, STYLE 1

TO92 (TO226AA)
Characteristic

Symbol
Min
Max
Unit

(IC = 100 mAdc, VBE = 0)
V(BR)CES
40
Vdc

(IC = 10 mAdc, IB = 0)
VCEO(sus)
15
Vdc

(IC = 100 mAdc, IE = 0)
V(BR)CBO
40
Vdc

(IE = 100 mAdc, IC = 0)
V(BR)EBO
5.0
Vdc
0.5
3.0
Characteristic
OFF CHARACTERISTICS

(VCE = 20 Vdc, VBE = 0)
(VCE = 20 Vdc, VBE = 0, TA = 65C)
mAdc
ICES
2555
MPS3646
Characteristic
Symbol
Min
Max
Unit
hFE
30
25
15
120
DC Current Gain

(IC = 300 mA, VCE = 1.0 Vdc)

(IC = 30 mA, IB = 3.0 mA, TA = 65C)
VCE(sat)
0.2
0.28
0.5
0.3
Vdc

(IC = 300 mAdc, IB = 30 mA)
VBE(sat)
0.73
0.95
1.2
1.7
Vdc
fT
350
MHz
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Cobo
5.0
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
9.0
pF
ton
18
ns
td
10
ns
tr
15
ns
toff
28
ns
tf
15
ns
ts
18
ns

TurnOn Time
(VCC = 10 Vdc,
Vd IC = 300 mAdc,
Ad IB1 = 30 mAdc)
Ad )
(Figure 1)
Delay Time
Rise Time
TurnOff Time
((VCC = 10 Vdc, IC = 300 mAdc, IB1 = IB2 = 30 mAdc))

(Figure 1)
Fall Time
Storage Time
(VCC = 10 Vdc, IC = 10 mAdc, IB1 = IB2 = 10 mAdc) (Figure 2)
Figure 1. Switching Time Equivalent Test Circuit

Test
Condition IC
VCC
RS
mA
10
10
100
2556
RC CS(max) VBE(off)
pF
1.5
10
330 270
0 960
560
10
560
12
2.0
96
V1
V2
V3
10.55 4.15 10.70
4.65 6.55
6.35 4.65 6.55
V1
ton
t1
V3
0
V2
0
VEB(off)
< 2 ns
toff
t1
VCC
RC
RB
CS
< 2 ns
PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2%
MPS3646
CURRENT GAIN CHARACTERISTICS
100
MPS3646
VCE = 1 V
70
TJ = 125C
50
25C
15C
30
55C
20
10
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
200
MPS3646
VCE = 1 V
TJ = 125C
25C
100
15C
70
55C
50
30
20
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
Figure 2. Minimum Current Gain
270
t1
3V
8 pF
+10 V
V
0
C < COPT
CS < 4 pF
<1 ns 9.2 k
DUTY CYCLE = 2%
C=0
COPT
TIME

NOTE 1
When a transistor is held in a conductive state by a base current, IB,

a charge, QS, is developed or stored in the transistor. QS may be
written: QS = Q1 + QV + QX.
Q1 is the charge required to develop the required collector current.
This charge is primarily a function of alpha cutoff frequency. QV is the
charge required to charge the collectorbase feedback capacity. QX is
excess charge resulting from overdrive, i.e., operation in saturation.
The charge required to turn a transistor on to the edge of saturation
is the sum of Q1 and QV which is defined as the active region charge,
QA. QA = IB1tr when the transistor is driven by a constant current step
IC
.
(IB1) and IB1 < <
hFE
If IB were suddenly removed, the transistor would continue to

conduct until QS is removed from the active regions through an
external path or through internal recombination. Since the internal
recombination time is long compared to the ultimate capability of a
transistor, a charge, QT, of opposite polarity, equal in magnitude, can
be stored on an external capacitor, C, to neutralize the internal charge
and considerably reduce the turnoff time of the transistor. Figure 3
shows the test circuit and Figure 4 the turnoff waveform. Given QT
from Figure 13, the external C for worstcase turnoff in any circuit is:
C = QT/V, where V is defined in Figure 3.
2557
MPS3646
ON CONDITION CHARACTERISTICS

VOLTAGE (VOLTS)
1.0
MPS3646
TJ = 25C
0.8
IC = 10 mA
50 mA
200 mA
100 mA
0.6
0.4
0.2
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50

VOLTAGE (VOLTS)
1.0
MPS3646
TJ = 25C
0.8
50 mA
IC = 10 mA
100 mA
200 mA
0.6
0.4
0.2
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
IC/IB = 10
TJ = 25C
1.0
Vsat , SATURATION VOLTAGE (VOLTS)
1.2
MAX VBE(sat)
MIN VBE(sat)
0.8
0.6
MAX VCE(sat)
0.4
0.2
0
1.0
2.0 3.0
50 70 100
5.0 7.0 10
20 30
2558
200
1.0
0.5
qVC for VCE(sat)
(25C to 125C)
( 55C to 25C)
0
0.5
(25C to 125C)
1.0
qVB for VBE
( 55C to 25C)
1.5
2.0
40
80
120
160
200
MPS3646
200
200
VCC = 10 V
TJ = 25C
100
70
70
t d, DELAY TIME (ns)
100
IC/IB = 10
TJ = 25C
TJ = 125C
td @ VEB(off) = 3 V
50
30
2V
20
0V
10
VCC = 10 V
50
30
20
VCC = 3 V
10
7.0
7.0
5.0
5.0
1.0
2.0
50
5.0
10
20
100
200
1.0
50
5.0
10
20
2.0
Figure 8. Delay Time
200
IC/IB = 20
30
TJ = 25C
TJ = 125C
IC/IB = 10
20
10
ts
7.0
VCC = 10 V
TJ = 25C
TJ = 125C
100
200
Figure 9. Rise Time
50
^ ts 1/8 tf
70
50
30
IC/IB = 20
20
IC/IB = 10
10
IB1 = IB2
7.0
5.0
5.0
1.0
50
5.0
10
20
2.0
100
200
1.0
50
5.0
10
20
2.0
100
200
5.0 7.0 10
20 30 50 70 100
200
10
1000
MAX
TYP
7.0
IC/IB = 10
TJ = 25C
TJ = 125C
700
500
Cibo
Q, CHARGE (pC)
CAPACITANCE (pF)
100
5.0
Cobo
3.0
300
200
QT
100
VCC = 3 V
70
50
VCC = 10 V
30
2.0
0.1
0.2
0.5
1.0
2.0
REVERSE BIAS (Vdc)
5.0
10
Figure 12. Junction Capacitance
20
QA
VCC = 3 V
1.0
2.0 3.0
2559
MOTOROLA
MPS3904
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
1
2
Rating
Symbol
Value
Unit
VCEO
40
Vdc
VCBO
60
Vdc
VEBO
6.0
Vdc
IC
100
mAdc

Derate above 25C
PD
625
5.0
mW
mW/C
PD
450
mW

Derate above 25C
PD
1.5
12
Watts
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit
RqJA
200
C/W
RqJC
83.3
C/W

Temperature Range
CASE 2904, STYLE 1

TO92 (TO226AA)
Characteristic

Symbol
Min
Max
Unit

(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
Vdc

(IC = 10 Adc, IE = 0)
V(BR)CBO
60
Vdc

(IE = 10 Adc, IC = 0)
V(BR)EBO
6.0
Vdc

ICEX
50
nAdc
Base Cutoff Current

IBL
50
nAdc
Characteristic
OFF CHARACTERISTICS
REV 1
2560
MPS3904
Characteristic
Symbol
Min
Max
Unit
40
70
100
60
30
300
0.2
0.3
0.65
0.85
1.1
fT
300
MHz
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Cobo
4.0
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
8.0
pF
Input Impedance
hie
1.0
10

hre
0.5
8.0
X 104

hfe
100
400
Output Admittance
hoe
1.0
40
mhos
Noise Figure
NF
5.0
dB
( CC = 3.0 Vdc, VBE(off) = 0.5 Vdc,

(V
td
35
ns
tr
50
ns
( CC = 3.0 Vdc, IC = 10 mAdc,

(V
IB1 = IB2 = 1.0 mAdc)
ts
900
ns
tf
90
ns
DC Current Gain
hFE

VCE(sat)

VBE(sat)
Vdc
Vdc

Delay Time
Rise Time
Storage Time
Fall Time

+ 3.0 V
300 ns
DUTY CYCLE = 2%
275
+10.9 V
+ 3.0 V
10 < t1 < 500 s

DUTY CYCLE = 2%
t1
+10.9 V
10 k
0.5 V
<1.0 ns
275
10 k
0
CS < 4.0 pF*
9.1 V
< 1.0 ns
1N916
CS < 4.0 pF*
2561
MPS3904
(VCE = 5.0 Vdc, TA = 25C)
20
100
BANDWIDTH = 1.0 Hz
RS = 0
50
300 A
10
IC = 1.0 mA
100 A
7.0
5.0
10 A
3.0
20
300 A
100 A
10
5.0
2.0
1.0
30 A
0.5
30 A
BANDWIDTH = 1.0 Hz
RS
IC = 1.0 mA
10 A
0.2
2.0
0.1
10
20
50
100 200
500 1 k
f, FREQUENCY (Hz)
2k
5k
10 k
10
20
50
100 200
500 1 k
f, FREQUENCY (Hz)
2k
5k
10 k

(VCE = 5.0 Vdc, TA = 25C)
BANDWIDTH = 1.0 Hz
200 k
100 k
50 k
500 k
20 k
10 k
5k
2.0 dB
2k
1k
500
3.0 dB 4.0 dB
6.0 dB
10 dB
200
100
50
1M
500 k
BANDWIDTH = 1.0 Hz
200 k
100 k
50 k
20 k
10 k
1.0 dB
5k
2.0 dB
2k
1k
500
5.0 dB
200
100
10
20
30
50 70 100
200 300
500 700
1k
8.0 dB
10
20
500 k
3.0 dB
30
50 70 100
200 300
500 700
1k
10 Hz to 15.7 kHz
200 k
100 k
50 k
20 k
10 k
5k
NF
2.0 dB
3.0 dB
5.0 dB
200
100
50
8.0 dB
10
20
30
50 70 100
200 300
500 700
en2
4KTRS
1.0 dB
2k
1k
500
+ 20 log10
1k
Figure 7. Wideband
2562
MPS3904
400
TJ = 125C
25C
200
55C
100
80
MPS3904
VCE = 1.0 V
VCE = 10 V
60
40
0.004 0.006 0.01
0.02 0.03
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
20
30
50
70 100
100
1.0
MPS3904
TJ = 25C
0.8
IC = 1.0 mA
0.6
10 mA
50 mA
100 mA
0.4
0.2
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
TA = 25C
PULSE WIDTH = 300 s
80 DUTY CYCLE 2.0%
300 A
200 A
40
100 A
20
0
5.0 10
20
5.0
10
15
20
25
30
35
TJ = 25C
V, VOLTAGE (VOLTS)
1.2
1.0
0.6
0.4
0.2
0
0.2
0.5 1.0
2.0
5.0
10
20
40
1.4
0.1
400 A
60
0.8
IB = 500 A
50
100
1.6
0.8
25C to 125C
0
*qVC for VCE(sat)

55C to 25C
0.8
25C to 125C
1.6
qVB for VBE

2.4
0.1
0.2
55C to 25C
0.5
1.0 2.0
5.0 10 20
50
100
2563
MPS3904
1000
VCC = 3.0 V
IC/IB = 10
TJ = 25C
100
70
50
700
500
ts
300
200
t, TIME (ns)
t, TIME (ns)
300
200
tr
30
20
10
7.0
5.0
100
70
50
tf
30
VCC = 3.0 V
IC/IB = 10
IB1 = IB2
TJ = 25C
20
3.0
1.0
2.0
50 70
20 30
5.0 7.0 10
3.0
10
1.0
100
2.0
3.0
500
70 100
10
TJ = 25C
f = 100 MHz
TJ = 25C
f = 1.0 MHz
7.0
300
VCE = 20 V
200
5.0 V
100
Cib
5.0
Cob
3.0
2.0
70
50
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
1.0
0.05
50
0.2
0.5
1.0
2.0
5.0
VCE = 10 Vdc
f = 1.0 kHz
TA = 25C
3.0
2.0
1.0
0.7
0.5
0.3
MPS3904
hfe 200 @ IC = 1.0 mA
7.0
5.0
0.2
0.1
10
20
50
200
10
100
70
50
VCE = 10 Vdc
f = 1.0 kHz
TA = 25C
MPS3904
hfe 200 @ IC = 1.0 mA
30
20
10
7.0
5.0
3.0
0.2
0.5
20
1.0 2.0
5.0
10
2564
0.1
20
50
C, CAPACITANCE (pF)
20 30
5.0 7.0 10
50
100
2.0
0.1
0.2
0.5
20
1.0 2.0
5.0
10
50
100

(NORMALIZED)
MPS3904
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
FIGURE 19A
0.05
P(pk)
0.02
0.03
0.02
t1
0.01
0.01
0.01 0.02
SINGLE PULSE
0.05
0.1
0.2
0.5
t2
1.0
2.0
5.0
10
20
50
t, TIME (ms)
100 200

PULSE TRAIN SHOWN
ZJA(t) = r(t) RJA
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 k 100 k
104
VCC = 30 Vdc

103
102
ICEO
101
Example:
conditions:
t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2)
r(t) is 0.22.
ICBO
AND
100
101
102
40 20
+ 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160


T = r(t) x P(pk) x RJA = 0.22 x 2.0 x 200 = 88C.
Figure 19A.
400
1.0 ms
200
100
60
40
TC = 25C
dc
dc
TJ = 150C
10
CURRENT LIMIT
THERMAL LIMIT
6.0
2.0

applicable curve.
10 s
1.0 s
TA = 25C
20
4.0
100 s
4.0
6.0 8.0 10
20
40
Figure 20.
2565
MOTOROLA
MPS3906
PNP Silicon
COLLECTOR
3
2
BASE
1
EMITTER
1
2
CASE 2904, STYLE 1

TO92 (TO226AA)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
40
Vdc
VCBO
40
Vdc
VEBO
5.0
Vdc
IC
200
mAdc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
Watts
mW/C
TJ, Tstg
55 to +150

Temperature Range
Symbol
Max
Unit
Characteristic
RqJA
200
C/W
RqJC
83.3
C/W

Symbol
Min
Max
Unit

(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
Vdc

(IC = 10 mAdc, IE = 0)
V(BR)CBO
40
Vdc

(IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
Vdc

ICEX
50
nAdc
Base Cutoff Current

IBL
50
nAdc
Characteristic
OFF CHARACTERISTICS
1. Pulse Test: Pulse Width = 300 ms; Duty Cycle = 2.0%.
REV 1
2566
MPS3906
Characteristic
Symbol
Min
Max
Unit
60
80
100
60
30
300
0.25
0.4
0.65
0.85
0.95
fT
250
MHz
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Cobo
4.5
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
10
pF
Input Impedance
hie
2.0
12

hre
1.0
10
X 10 4

hfe
100
400
Output Admittance
hoe
3.0
60
mmhos
Noise Figure
NF
4.0
dB
((VCC = 3.0 Vdc, VBE(off) = + 0.5 Vdc,

td
35
ns
tr
50
ns

IB1 = IB2 = 1.0
1 0 mAdc)
Ad )
ts
600
ns
tf
90
ns
DC Current Gain
hFE

VCE(sat)

VBE(sat)
Vdc
Vdc

(IC = 10 mAdc, VCE = 20 V, f = 100 MHz)
Delay Time
Rise Time
Storage Time
Fall Time
2567
MPS3906
(VCE = 5.0 Vdc, TA = 25C)
10
7.0
IC = 10 A
5.0
1.0
7.0
5.0
BANDWIDTH = 1.0 Hz
RS 0
30 A
3.0
100 A
300 A
1.0 mA
2.0
BANDWIDTH = 1.0 Hz
RS
IC = 1.0 mA
3.0
2.0
300 A
1.0
0.7
0.5
100 A
30 A
0.3
0.2
1.0
10 A
0.1
10
20
50
100 200
500 1.0 k
f, FREQUENCY (Hz)
2.0 k
5.0 k
10
10 k
20
50
100 200
500 1.0 k 2.0 k
f, FREQUENCY (Hz)
5.0 k
10 k
1.0 M
500 k
BANDWIDTH = 1.0 Hz
(VCE = 5.0 Vdc, TA = 25C)
200 k
100 k
50 k
20 k
10 k
0.5 dB
5.0 k
1.0 dB
2.0 k
1.0 k
500
2.0 dB
3.0 dB
200
100
20
30
50 70 100
200 300
BANDWIDTH = 1.0 Hz
200 k
100 k
50 k
20 k
10 k
0.5 dB
5.0 k
1.0 dB
2.0 k
1.0 k
500
2.0 dB
3.0 dB
200
100
5.0 dB
10
1.0 M
500 k
500 700 1.0 k
5.0 dB
10
20
1.0 M
500 k
30
50 70 100
200 300
500 700 1.0 k
10 Hz to 15.7 kHz
200 k
100 k
50 k
20 k
10 k
NF
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
200
100
10
20
30
50 70 100
200 300
en2
4KTRS

5.0 k
2.0 k
1.0 k
500
+ 20 log10
500 700 1.0 k
Figure 5. Wideband
2568
MPS3906
400
TJ = 125C
25C
200
55C
100
80
60
VCE = 1.0 V
VCE = 10 V
40
0.003 0.005
0.01
0.02 0.03
0.05 0.07 0.1
0.2 0.3 0.5 0.7 1.0

2.0
3.0
5.0 7.0
10
20
30
50 70 100
100
1.0
TA = 25C
0.8
IC = 1.0 mA
0.6
10 mA
50 mA
100 mA
0.4
0.2
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
TA = 25C
PULSE WIDTH = 300 s
80 DUTY CYCLE 2.0%
300 A
200 A
150 A
40
100 A
50 A
20
0
5.0 10
20
5.0
10
15
20
25
30
35
TJ = 25C
V, VOLTAGE (VOLTS)
1.2
1.0
0.8
0.6
0.4
0.2
0
0.5 1.0
2.0
5.0
10
20
40
1.4
0.2
250 A
60
0.1
IB = 400 A
350 A
50
100
1.6
0.8
*qVC for VCE(sat)
25C to 125C
0
55C to 25C
0.8
25C to 125C
1.6
2.4
0.1
qVB for VBE

0.2
55C to 25C
0.5
1.0 2.0
5.0
10 20
50
100
2569
MPS3906
500
300
200
200
100
70
50
30
tr
20
10
7.0
5.0
1.0
100
70
50
tf
30
20
2.0
3.0
50 70
20 30
5.0 7.0 10
10
1.0
100
2.0 3.0 5.0 7.0 10

20 30
50 70 100
500
10
TJ = 25C
TJ = 25C
7.0
VCE = 20 V
300
Cib
C, CAPACITANCE (pF)
5.0 V
200
100
5.0
3.0
2.0
Cob
70
50
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
1.0
0.05
50
0.2
0.5
1.0
2.0
5.0
3.0
VCE = 10 Vdc
f = 1.0 kHz
TA = 25C
2.0
1.0
0.7
0.5
0.3
MPS3906
hfe 200
@ IC = 1.0 mA
7.0
5.0
0.2
0.1
10
20
50
200
10
100
70
50
30
20
VCE = 10 Vdc
f = 1.0 kHz
TA = 25C
MPS3906
hfe 200
@ IC = 1.0 mA
10
7.0
5.0
3.0
0.2
0.5
20
1.0 2.0
5.0
10
2570
0.1
20
VCC = 3.0 V
IC/IB = 10
IB1 = IB2
TJ = 25C
ts
300
t, TIME (ns)
t, TIME (ns)
1000
700
500
VCC = 3.0 V
IC/IB = 10
TJ = 25C
50
100
2.0
0.1
0.2
0.5
20
1.0 2.0
5.0
10
50
100

(NORMALIZED)
MPS3906
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
FIGURE 19
0.05
P(pk)
0.02
0.03
0.02
t1
0.01
0.01
0.01 0.02
SINGLE PULSE
0.05
0.1
0.2
0.5
1.0
t2
2.0
5.0
10
20
50
t, TIME (ms)
100 200

PULSE TRAIN SHOWN
ZJA(t) = r(t) RJA
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 k 100 k
400
200
100 s
100
TC = 25C
dc
60
1.0 s
TA = 25C
40
dc
20
TJ = 150C
10
CURRENT LIMIT
THERMAL LIMIT
6.0
4.0
10 s
1.0 ms
4.0
6.0 8.0 10
20
2.0

applicable curve.
40
104
VCC = 30 V
101

Example:
t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)
r(t) is 0.22.
102

T = r(t) x P(pk) x RJA = 0.22 x 2.0 x 200 = 88C.
103
ICEO
102
101
ICBO
AND
100
4
0
2
0
+ 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160

2571
MOTOROLA
MPS4124
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
1
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCE
25
Vdc
VCB
30
Vdc
VEB
5.0
Vdc
IC
200
mAdc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
W
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit

Temperature Range
CASE 2904, STYLE 1

TO92 (TO226AA)
Characteristic
RqJA
200
C/W
RqJC
83.3
C/W

Characteristic
Symbol
Min
Max
25
30
5.0
50
50
Unit
OFF CHARACTERISTICS
(IC = 1.0 mA, IB = 0)
V(BR)CEO

(IC = 10 mA, IE = 0)
V(BR)CBO

(IC = 0, IE = 10 mA)
V(BR)EBO

(VCB = 20 V, IE = 0)
ICBO

(VEB = 3.0 V, IC = 0)
IEBO
Vdc
Vdc
Vdc
nAdc
nAdc
2572
MPS4124
Characteristic
Symbol
Min
Max
120
60
360
0.3
0.95
170
4.0
13.5
120
480
5.0
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 2.0 mA, VCE = 1.0 V)
(IC = 50 mA, VCE = 1.0 V)
hFE

(IC = 50 mA, IB = 5.0 mA)
VCE(sat)

(IC = 50 mA, IB = 5.0 mA)
VBE(sat)
Vdc
Vdc

(IC = 10 mA, VCE = 20 V, f = 100 MHz)
fT
Output Capacitance
(VCB = 5.0 V, IE = 0, f = 1.0 MHz)
Cob
Input Capacitance
(VEB = 0.5 V, IC = 0, f = 1.0 MHz)
Cib

(IC = 2.0 mA, VCE = 1.0 V, f = 1.0 kHz)
hfe
Noise Figure
(IC = 100 mA, VCE = 5.0 V, RS = 1.0 k, f = 1.0 kHz)
NF
MHz
pF
pF
dB
2573
MOTOROLA
MPS4126
PNP Silicon
COLLECTOR
3
2
BASE
1
EMITTER
1
2
CASE 2904, STYLE 1

TO92 (TO226AA)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCE
25
Vdc
VCB
25
Vdc
VEB
4.0
Vdc
IC
200
mAdc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
W
mW/C
TJ, Tstg
55 to +150

Temperature Range
Symbol
Max
Unit
Characteristic
RqJA
200
C/W
RqJC
83.3
C/W

Characteristic
Symbol
Min
Max
25
25
4.0
50
50
Unit
OFF CHARACTERISTICS
(IC = 1.0 mA, IB = 0)
V(BR)CEO

(IC = 10 mA, IE = 0)
V(BR)CBO

(IC = 0, IE = 10 mA)
V(BR)EBO

(VCB = 20 V, IE = 0)
ICBO

(VEB = 3.0 V, IC = 0)
IEBO
Vdc
Vdc
Vdc
nAdc
nAdc
2574
MPS4126
Characteristic
Symbol
Min
Max
120
60
360
0.4
0.95
170
4.5
11.5
120
480
4.0
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 2.0 mA, VCE = 1.0 V)
(IC = 50 mA, VCE = 1.0 V)
hFE

(IC = 50 mA, IB = 5.0 mA)
VCE(sat)

(IC = 50 mA, IB = 5.0 mA)
VBE(sat)
Vdc
Vdc

(IC = 10 mA, VCE = 20 V, f = 100 MHz)
fT
Output Capacitance
(VCB = 5.0 V, IE = 0, f = 1.0 MHz)
Cob
Input Capacitance
(VEB = 0.5 V, IC = 0, f = 1.0 MHz)
Cib

(IC = 2.0 mA, VCE = 1.0 V, f = 1.0 kHz)
hfe
Noise Figure
(IC = 100 mA, VCE = 5.0 V, RS = 1.0 k, f = 1.0 kHz)
NF
MHz
pF
pF
dB
2575
MOTOROLA
Transistor
MPS4250
PNP Silicon
COLLECTOR
3
2
BASE
1
EMITTER
1
2
MAXIMUM RATINGS
Rating
CASE 2904, STYLE 1

TO92 (TO226AA)
Symbol
Value
Unit
VCEO
40
Vdc
VCES
40
Vdc
VCBO
40
Vdc
VEBO
5.0
Vdc
IC
mAdc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
mW
mW/C
TJ, Tstg
55 to +150

Temperature Range
Symbol
Max
Unit
Characteristic
RqJA
200
C/W
RqJC
83.3
C/W

Symbol
Min
Max
Unit
V(BR)CES
40
Vdc
V(BR)CEO(sus)
40
Vdc

(IC = 10 mA)
V(BR)CBO
40
Vdc

(IE = 10 mA)
V(BR)EBO
5.0
Vdc
10
3.0
nA
mA
20
nA
Characteristic
OFF CHARACTERISTICS
(IC = 5.0 mA)
(IC = 5.0)

(VCB = 50 V)
(VCB = 40 V, TA = 65C)
ICBO

(VEB = 3.0 V)
IEBO
2576
MPS4250
Characteristic
Symbol
Min
Max
250
250
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 mA, VCE = 5.0 V)
(IC = 10 mA, VCE = 5.0 V)
hFE

(IC = 10 mA, IB = 0.5 mA)
VCE(sat)
0.25
Vdc

(IC = 10 mA, IB = 0.5 mA)
VBE(sat)
0.9
Vdc
Output Capacitance
(VCB = 5.0 V, f = 1.0 MHz)
Cobo
6.0
pF
Input Capacitance
(VEB = 0.5 V, f = 1.0 MHz)
Cibo
16
pF
250
2.0
800
2.0
2.0

(IC = 1.0 mA, VCE = 5.0 V, f = 1.0 kHz)
(IC = 0.5 mA, VCE = 5.0 V, f = 20 MHz)
hfe
Noise Figure
(IC = 20 mA, VCE = 5.0 V, RS = 10 k, f = 1.0 kHz, PBW = 150 Hz)
(IC = 250 mA, VCE = 5.0 V, RS = 1.0 k, f = 1.0 kHz, PBW = 150 Hz)
NF
dB
2577
MOTOROLA
High Frequency Transistor
MPS5179
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
12
Vdc
VCBO
20
Vdc
VEBO
2.5
Vdc
IC
50
mAdc

Derate above 25C
PD
200
1.14
mW
mW/C

Derate above 25C
PD
300
1.71
mW
mW/C
Tstg
55 to +150
CASE 2904, STYLE 1

TO92 (TO226AA)

Characteristic
Symbol
Min
Max
Unit
Collector Emitter Sustaining Voltage

(IC = 3.0 mAdc, IB = 0)
VCEO(sus)
12
Vdc

(IC = 0.001 mAdc, IE = 0)
V(BR)CBO
20
Vdc

(IE = 0.01 mAdc, IC = 0)
V(BR)EBO
2.5
Vdc
0.02
1.0
hFE
25
250

VCE(sat)
0.4
Vdc

VBE(sat)
1.0
Vdc
OFF CHARACTERISTICS

(VCB = 15 Vdc, IE = 0)
(VCB = 15 Vdc, IE = 0, TA = 150C)
Adc
ICBO
ON CHARACTERISTICS
DC Current Gain
2578
MPS5179
Characteristic
Symbol
Min
Max
Unit
fT
900
2000
MHz
(VCB = 10 Vdc, IE = 0, f = 0.1 to 1.0 MHz)
Ccb
1.0
pF

hfe
25
300
rbCc
3.0
14
ps
Noise Figure (See Figure 1)

(IC = 1.5 mAdc, VCE = 6.0 Vdc, RS = 50 ohms, f = 200 MHz)
NF
5.0
dB
CommonEmitter Amplifier Power Gain (See Figure 1)

(VCE = 6.0 Vdc, IC = 5.0 mAdc, f = 200 MHz)
Gpe
15
dB


(IE = 2.0 mAdc, VCB = 6.0 Vdc, f = 31.9 MHz)
TYPE
1N3195
DC
COMMON
TYPE
1N3195
L3
1200
FROM 50
SOURCE 0.02 F
Cin
3.0 35
2.0 10
C7
1.0 5.0
91
Q
L1
EXTERNAL
SHIELD
C2
2.0 10
10 k
VEE
1200
TO 50
LOAD
2.0 10
C6
L2
0.1 F
0.001 F
RFC
1.0 H
0.1 F
+VCC
1200
L1 13/4 Turns, #18 AWG, 0.5 L, 0.5 Diameter

L2 2 Turns, #16 AWG, 0.5 L, 0.5 Diameter
L3 2 Turns, #13 AWG, 0.25 L, 0.5 Diameter (Position 1/4 from L2)
Figure 1. 200 MHz Amplifier Power Gain

and Noise Figure Circuit
2579
MOTOROLA
MPS6428
NPN Silicon
COLLECTOR
3
2
BASE
1
1
EMITTER
CASE 2904, STYLE 1

TO92 (TO226AA)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
50
Vdc
VCBO
60
Vdc
VEBO
6.0
Vdc
IC
200
mAdc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
Watts
mW/C
TJ, Tstg
55 to +150

Temperature Range
Symbol
Max
Unit
Characteristic
RqJA
200
C/W
RqJC
83.3
C/W

Characteristic
Symbol
Min
Max
Unit

(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
50
Vdc

(IC = 0.1 mAdc, IE = 0)
V(BR)CBO
60
Vdc

(VCE = 30 Vdc)
ICES
0.025
mA

(VCB = 30 Vdc, IE = 0)
ICBO
0.01
mA

(VEB = 5.0 Vdc, IC = 0)
IEBO
0.01
mA
OFF CHARACTERISTICS
2580
MPS6428
Characteristic
Symbol
Min
Max
250
250
250
250
650
0.2
0.6
Unit
ON CHARACTERISTICS
DC Current Gain
(VCE = 5.0 Vdc, IC = 0.01 mAdc)
hFE

VCE(sat)
Vdc

VBE(on)
0.56
0.66
Vdc
fT
100
700
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
3.0
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
8.0
pF
Input Impedance
hie
3.0
30

hre
2.0
20
X 10 4

hfe
200
800
Output Admittance
hoe
5.0
50
mmhos

(IC = 1.0 mAdc, VCE = 5.0 V, f = 100 MHz)
NOISE FIGURE/TOTAL NOISE VOLTAGE CHARACTERISTICS
Noise Figure/Voltage
(VCE = 5.0 V, IC = 0.1 mA, TA = 25C)
NF
VT
Max (1)
NF
VT
Max (2)
NF
VT
Max (3)
7.0
6.0
3.5
18.1
5700
4.3
Unit
dB
nV
1. RS = 10 k, BW = 1.0 Hz, f = 100 Hz

2. RS = 50 k, BW = 15.7 kHz, f = 10 Hz10 kHz
3. RS = 500 , BW = 1.0 Hz, f = 10 Hz
2581
MOTOROLA
MPS6507
COLLECTOR
3
NPN Silicon
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
20
Vdc
VCBO
30
Vdc
VEBO
3.0
Vdc
IC
50
mAdc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
Watts
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit
RqJA(1)
200
C/W
RqJC
83.3
C/W

Temperature Range
1
2
CASE 2904, STYLE 1

TO92 (TO226AA)
Characteristic

Symbol
Min
Typ
Max
Unit

(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
20
Vdc

(IC = 100 mAdc, IE = 0)
V(BR)CBO
30
Vdc

(IE = 100 mAdc, IC = 0)
V(BR)EBO
3.0
Vdc
50
1.0
nAdc
mAdc
hFE
25
75
fT
700
800
MHz
Cobo
1.25
2.5
pF
hfe
20
Characteristic
OFF CHARACTERISTICS

(VCB = 15 Vdc, IE = 0)
(VCB = 15 Vdc, IE = 0, TA = 60C)
ICBO
ON CHARACTERISTICS
DC Current Gain(2)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
300 ms; Duty Cycle
2.0%.
2582
MOTOROLA
COLLECTOR 3
NPN
MPS6521*
PNP
MPS6523
2
BASE
1 EMITTER
COLLECTOR 3
for PNP transistors
2
BASE
1 EMITTER
MAXIMUM RATINGS
Rating
Symbol
NPN
PNP
25
25
40
25
Unit
VCEO
MPS6521
MPS6523
Vdc
VCBO
MPS6521
MPS6523
Vdc
VEBO
4.0
Vdc
IC
100
mAdc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
Watts
mW/C
TJ, Tstg
55 to +150

Temperature Range
1
3
CASE 2904, STYLE 1

TO92 (TO226AA)
Characteristic
Symbol
Max
Unit

(Printed Circuit Board Mounting)
RqJA
200
C/W
RqJC
83.3
C/W

Characteristic
Symbol
Min
Max
Unit

(IC = 0.5 mAdc, IB = 0)
V(BR)CEO
25
Vdc

(IE = 10 mAdc, IC = 0)
V(BR)EBO
4.0
Vdc
0.05
0.05
OFF CHARACTERISTICS

(VCB = 30 Vdc, IE = 0)
(VCB = 20 Vdc, IE = 0)
mAdc
ICBO
MPS6521
MPS6523
2583
NPN MPS6521 PNP MPS6523

Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
MPS6521
hFE
150
MPS6521
300
600
MPS6523
150
MPS6523
300
600
VCE(sat)
0.5
Vdc
Cobo
3.5
pF
NF
3.0
dB


Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Noise Figure
(IC = 10 mAdc, VCE = 5.0 Vdc, RS = 10 k ,
Power Bandwidth = 15.7 kHz, 3.0 dB points @ 10 Hz and 10 kHz)
2584

NPN
MPS6521
+ 3.0 V
300 ns
DUTY CYCLE = 2%
275
+10.9 V
+ 3.0 V
10 < t1 < 500 s

DUTY CYCLE = 2%
t1
+10.9 V
10 k
275
10 k
0.5 V
<1.0 ns
CS < 4.0 pF*
9.1 V
< 1.0 ns
CS < 4.0 pF*
1N916

(VCE = 5.0 Vdc, TA = 25C)
20
100
BANDWIDTH = 1.0 Hz
RS = 0
50
300 A
10
IC = 1.0 mA
100 A
7.0
5.0
10 A
3.0
20
300 A
100 A
10
5.0
2.0
1.0
30 A
0.5
30 A
10 A
0.2
2.0
BANDWIDTH = 1.0 Hz
RS
IC = 1.0 mA
0.1
10
20
50
100 200
500 1 k
f, FREQUENCY (Hz)
2k
5k
10 k
10
20
50
100 200
500 1 k
f, FREQUENCY (Hz)
2k
5k
10 k
2585

NPN
MPS6521

(VCE = 5.0 Vdc, TA = 25C)
BANDWIDTH = 1.0 Hz
200 k
100 k
50 k
500 k
20 k
10 k
5k
2.0 dB
2k
1k
500
3.0 dB 4.0 dB
6.0 dB
10 dB
200
100
50
1M
500 k
BANDWIDTH = 1.0 Hz
200 k
100 k
50 k
20 k
10 k
1.0 dB
5k
2.0 dB
2k
1k
500
5.0 dB
200
100
10
20
30
50 70 100
200 300
500 700
1k
8.0 dB
10
20
500 k
3.0 dB
30
50 70 100
200 300
500 700
1k
10 Hz to 15.7 kHz
200 k
100 k
50 k
20 k
10 k
5k
NF
1.0 dB
2k
1k
500
3.0 dB
5.0 dB
8.0 dB
10
20
30
50 70 100
200 300
500 700
en2
4KTRS

2.0 dB
200
100
50
+ 20 log10
1k
Figure 7. Wideband
2586

NPN
MPS6521
400
TJ = 125C
25C
200
55C
100
80
60
VCE = 1.0 V
VCE = 10 V
40
0.004 0.006 0.01
0.02 0.03
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
20
30
50
70 100
100
1.0
TJ = 25C
0.8
IC = 1.0 mA
0.6
10 mA
50 mA
100 mA
0.4
0.2
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
TA = 25C
PULSE WIDTH = 300 s
80 DUTY CYCLE 2.0%
300 A
200 A
40
100 A
20
0
5.0 10
20
5.0
10
15
20
25
30
35
TJ = 25C
V, VOLTAGE (VOLTS)
1.2
1.0
0.6
0.4
0.2
0
0.2
0.5 1.0
2.0
5.0
10
20
40
1.4
0.1
400 A
60
0.8
IB = 500 A
50
100

1.6
0.8
25C to 125C
0
*qVC for VCE(sat)

55C to 25C
0.8
25C to 125C
1.6
qVB for VBE

2.4
0.1
0.2
55C to 25C
0.5
1.0 2.0
5.0 10 20
50
100

2587

NPN
MPS6521

1000
VCC = 3.0 V
IC/IB = 10
TJ = 25C
100
70
50
700
500
ts
300
200
t, TIME (ns)
t, TIME (ns)
300
200
tr
30
20
10
7.0
5.0
100
70
50
tf
30
VCC = 3.0 V
IC/IB = 10
IB1 = IB2
TJ = 25C
20
3.0
1.0
2.0
50 70
20 30
3.0
5.0 7.0 10
10
1.0
100
2.0
3.0
500
70 100
10
TJ = 25C
f = 100 MHz
TJ = 25C
f = 1.0 MHz
7.0
300
VCE = 20 V
200
5.0 V
100
Cib
5.0
Cob
3.0
2.0
70
50
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
1.0
0.05
50
0.2
0.5
1.0
2.0
5.0
VCE = 10 Vdc
f = 1.0 kHz
TA = 25C
3.0
2.0
1.0
0.7
0.5
0.3
hfe 200 @ IC = 1.0 mA
7.0
5.0
0.2
0.1
10
20
50
200
10
100
70
50
VCE = 10 Vdc
f = 1.0 kHz
TA = 25C
hfe 200 @ IC = 1.0 mA
30
20
10
7.0
5.0
3.0
0.2
0.5
20
1.0 2.0
5.0
10

2588
0.1
20
50
C, CAPACITANCE (pF)
20 30
5.0 7.0 10
50
100
2.0
0.1
0.2
0.5
20
1.0 2.0
5.0
10
50
100


(NORMALIZED)
NPN
MPS6521
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
FIGURE 19A
0.05
P(pk)
0.02
0.03
0.02
t1
0.01
0.01
0.01 0.02
SINGLE PULSE
0.05
0.1
0.2
0.5
t2
1.0
2.0
5.0
10
20
50
t, TIME (ms)
100 200

PULSE TRAIN SHOWN
ZJA(t) = r(t) RJA
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 k 100 k
104
VCC = 30 Vdc

Example:
conditions:
t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2)
r(t) is 0.22.
103
102
ICEO
101
ICBO
AND
100
101
102
4
0
2
0
+ 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160


T = r(t) x P(pk) x RJA = 0.22 x 2.0 x 200 = 88C.
Figure 19A.
400
1.0 ms
200
100
60
40
TC = 25C
dc
10
CURRENT LIMIT
THERMAL LIMIT
2.0
10 s
1.0 s
dc
TJ = 150C
4.0

applicable curve.
TA = 25C
20
6.0
100 s
4.0
6.0 8.0 10
20
40
Figure 20.
2589

PNP
MPS6523
(VCE = 5.0 Vdc, TA = 25C)
10
7.0
IC = 10 A
5.0
1.0
7.0
5.0
BANDWIDTH = 1.0 Hz
RS 0
30 A
3.0
100 A
300 A
1.0 mA
2.0
BANDWIDTH = 1.0 Hz
RS
IC = 1.0 mA
3.0
2.0
300 A
1.0
0.7
0.5
100 A
30 A
0.3
0.2
1.0
10 A
0.1
10
20
50
100 200
500 1.0 k
f, FREQUENCY (Hz)
2.0 k
5.0 k
10
10 k
20
50
100 200
500 1.0 k 2.0 k
f, FREQUENCY (Hz)
5.0 k
10 k
1.0 M
500 k
BANDWIDTH = 1.0 Hz
(VCE = 5.0 Vdc, TA = 25C)
200 k
100 k
50 k
20 k
10 k
0.5 dB
5.0 k
1.0 dB
2.0 k
1.0 k
500
2.0 dB
3.0 dB
200
100
20
30
50 70 100
200 300
20 k
10 k
0.5 dB
5.0 k
1.0 dB
2.0 k
1.0 k
500
500 700 1.0 k
2.0 dB
3.0 dB
5.0 dB
10

1.0 M
500 k
BANDWIDTH = 1.0 Hz
200 k
100 k
50 k
200
100
5.0 dB
10
1.0 M
500 k
20
30
50 70 100
200 300
500 700 1.0 k
10 Hz to 15.7 kHz
200 k
100 k
50 k

NF
20 k
10 k
1.0 dB
2.0 dB
3.0 dB
5.0 dB
200
100
10
20
30
50 70 100
200 300
en2
4KTRS

0.5 dB
5.0 k
2.0 k
1.0 k
500
+ 20 log10
500 700 1.0 k
Figure 25. Wideband

2590

PNP
MPS6523
400
TJ = 125C
25C
200
55C
100
80
60
VCE = 1.0 V
VCE = 10 V
40
0.003 0.005
0.01
0.02 0.03
0.05 0.07 0.1
0.2 0.3 0.5 0.7 1.0

2.0
3.0
5.0 7.0
10
20
30
50 70 100
100
1.0
TA = 25C
0.8
IC = 1.0 mA
0.6
10 mA
50 mA
100 mA
0.4
0.2
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
TA = 25C
PULSE WIDTH = 300 s
80 DUTY CYCLE 2.0%
300 A
200 A
150 A
40
100 A
50 A
20
0
5.0 10
20
5.0
10
15
20
25
30
35
TJ = 25C
V, VOLTAGE (VOLTS)
1.2
1.0
0.8
0.6
0.4
0.2
0
0.5 1.0
2.0
5.0
10
20
50
40
1.4
0.2
250 A
60
0.1
IB = 400 A
350 A
100

1.6
0.8
*qVC for VCE(sat)
25C to 125C
0
55C to 25C
0.8
25C to 125C
1.6
2.4
0.1
qVB for VBE

0.2
55C to 25C
0.5
1.0 2.0
5.0
10 20
50
100

2591

PNP
MPS6523

500
300
200
200
100
70
50
30
tr
20
10
7.0
5.0
1.0
100
70
50
tf
30
20
2.0
3.0
50 70
20 30
5.0 7.0 10
10
1.0
100
2.0 3.0 5.0 7.0 10

20 30
50 70 100
500
10
TJ = 25C
TJ = 25C
7.0
VCE = 20 V
300
Cib
C, CAPACITANCE (pF)
5.0 V
200
100
5.0
3.0
2.0
Cob
70
50
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
1.0
0.05
50
0.2
0.5
1.0
2.0
5.0
3.0
2.0
VCE = 10 Vdc
f = 1.0 kHz
TA = 25C
MPS6523
hfe 100
@ IC = 1.0 mA
1.0
0.7
0.5
0.3
MPS6521
hfe 200
@ IC = 1.0 mA
7.0
5.0
0.2
0.1
10
20
50
200
10
100
70
50
30
20
VCE = 10 Vdc
f = 1.0 kHz
TA = 25C
MPS6521
hfe 200
@ IC = 1.0 mA
10
7.0
5.0
MPS6523
hfe 100
@ IC = 1.0 mA
3.0
0.2
0.5
20
1.0 2.0
5.0
10

2592
0.1
20
VCC = 3.0 V
IC/IB = 10
IB1 = IB2
TJ = 25C
ts
300
t, TIME (ns)
t, TIME (ns)
1000
700
500
VCC = 3.0 V
IC/IB = 10
TJ = 25C
50
100
2.0
0.1
0.2
0.5
20
1.0 2.0
5.0
10
50
100


PNP
MPS6523

(NORMALIZED)

1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
FIGURE 19
0.05
P(pk)
0.02
0.03
0.02
t1
0.01
0.01
0.01 0.02
SINGLE PULSE
0.05
0.1
0.2
0.5
1.0
t2
2.0
5.0
10
20
50
t, TIME (ms)
100 200

PULSE TRAIN SHOWN
ZJA(t) = r(t) RJA
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 k 100 k
400
100 s
100
TC = 25C
dc
60
1.0 s
TA = 25C
40
dc
20
TJ = 150C
10
CURRENT LIMIT
THERMAL LIMIT
6.0
4.0
10 s
1.0 ms
200
4.0
6.0 8.0 10
20
2.0

applicable curve.
40
104
VCC = 30 V
103
ICEO
102
101
ICBO
AND
100
101
102
4
0
2
0
+ 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160


Example:
conditions:
t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)
r(t) is 0.22.
T = r(t) x P(pk) x RJA = 0.22 x 2.0 x 200 = 88C.

2593
MOTOROLA
Audio Transistor
MPS6560
NPN Silicon
COLLECTOR
3
2
BASE
1
2
1
EMITTER
CASE 2904, STYLE 1

TO92 (TO226AA)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
25
Vdc
VCBO
25
Vdc
VEBO
5.0
Vdc
IC
500
mAdc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
Watts
mW/C
TJ, Tstg
55 to +150
Symbol

Temperature Range
Characteristic
Max
Unit
RqJA(1)
200
C/mW
RqJC
83.3
C/mW

Characteristic
Symbol
Min
Max
Unit

(IC = 10 mAdc, IB = 0)
V(BR)CEO
25
Vdc

(IC = 100 mAdc, IE = 0)
V(BR)CBO
25
Vdc

(IE = 100 mAdc, IC = 0)
V(BR)EBO
5.0
Vdc

(VCE = 25 Vdc, IB = 0)
ICES
100
nAdc

(VCB = 20 Vdc, IE = 0)
ICBO
100
nAdc

(VEB(off) = 4.0 Vdc, IC = 0)
IEBO
100
nAdc
OFF CHARACTERISTICS
300 ms; Duty Cycle
2.0%.
REV 1
2594
MPS6560
Characteristic
Symbol
Min
Max
35
50
50
200
Unit
DC Current Gain
hFE

VCE(sat)
0.5
Vdc

VBE(on)
1.2
Vdc
fT
60
MHz
Cobo
30
pF

Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
2595
MOTOROLA
NPN
MPS6601
MPS6602*
PNP
MPS6651
MPS6652*
COLLECTOR
3
COLLECTOR
3
2
BASE
2
BASE
NPN
PNP
1
EMITTER
1
EMITTER

for PNP transistors
MAXIMUM RATINGS
Rating
Symbol
Value
VCEO
MPS6601/6651
MPS6602/6652
Vdc
VCBO
Vdc
25
30
VEBO
4.0
Vdc
IC
1000
mAdc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
Watts
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit
RqJA(1)
200
C/W
RqJC
83.3
C/W

Temperature Range
25
40
MPS6601/6651
MPS6602/6652
Unit
1
2
CASE 2904, STYLE 1

TO92 (TO226AA)
Characteristic

Symbol
Characteristic
Min
Max
25
40
25
40
4.0
0.1
0.1
0.1
0.1
Unit
OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0)
(IC = 100 Adc, IE = 0)
V(BR)CEO
MPS6601/6651
MPS6602/6652
Vdc
V(BR)CBO
MPS6601/6651
MPS6602/6652

(IE = 10 Adc, IC = 0)
V(BR)EBO

(VCE = 25 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0)
MPS6601/6651
MPS6602/6652

(VCB = 25 Vdc, IE = 0)
(VCB = 30 Vdc, IE = 0)
MPS6601/6651
MPS6602/6652
Vdc
Vdc
Adc
ICES
Adc
ICBO
2596

Characteristic
Symbol
Min
Max
50
50
30
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 1000 mAdc, VCE = 1.0 Vdc)
hFE

(IC = 1000 mAdc, IB = 100 mAdc)
VCE(sat)
0.6
Vdc
VBE(on)
1.2
Vdc
fT
100
MHz
Cobo
30
pF
td
25
ns
tr
30
ns
ts
250
ns
tf
50
ns

Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Delay Time
IB1 = 50 mAdc
mAdc,
tp
300 ns Duty Cycle)
Rise Time
Storage Time
Fall Time
TURNON TIME
TURNOFF TIME
VCC
1.0 V
VCC
+VBB
+40
V
5.0 ms
100
+40
V
RL
100
OUTPUT
+10
V
Vin
tr = 3.0 ns
OUTPUT
Vin
RB
0
* CS
5.0 mF
RL
t 6.0 pF
RB
* CS
5.0 mF
t 6.0 pF
100
100
5.0 ms
tr = 3.0 ns
2597

300
200
h FE , CURRENT GAIN
h FE , CURRENT GAIN
200
100
70
VCE = 1.0 V
TJ = 25C
50
30
100
VCE = 10 V
TJ = 25C
f = 30 MHz
30
10
100
200
1000
200
100
70
50
VCE = 10 V
TJ = 25C
f = 30 MHz
30
10
100
200
1000
1.0
TJ = 25C
0.8
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
300
0.8
0.6
0.4
2598
1000
Figure 3. MPS6651/6652 DC Current Gain
70
0
1.0
100
100
0.2
VCE = 1.0 V
TJ = 25C
200
1.0
50
300
50
70
20
10
1000
10
100
100
1000
0.4
0.2
10
0.6
TJ = 25C
0
1.0
10
100
1000

160
80
TJ = 25C
60
40
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
TJ = 25C
Cib
20
Cob
0
Cob
Cib
5.0
1.0
10
15
20
2.0
3.0
4.0
120
80
Cib
40
Cob
0
25
5.0
Cob
Cib
5.0
1.0
8.0
6.0
10
VCE = 5.0 V
f = 1.0 kHz
TA = 25C
IC = 100 mA
4.0
2.0
VCE = 5.0 V
f = 1.0 kHz
TA = 25C
8.0
6.0
IC = 100 mA
4.0
2.0
0
10
100
1k
10 k
10
1k
100
10 k
Figure 10. MPS6601/6602 Noise Figure
Figure 11. MPS6651/6652 Noise Figure
10 k
10 k
VCC = 40 V
IC/IB = 10
IB1 = IB2
TJ = 25C
1k
VCC = 40 V
IC/IB = 10
IB1 = IB2
TJ = 25C
5k
3k
1k
t, TIME (NS)
5k
3k
t, TIME (NS)
25
5.0
10
500
ts
200
500
ts
200
100
100
50
tf
20
tr
10
10
15
20
2.0
3.0
4.0
10
20
50
100
200
tf
50
500
tr
td
20
td
1000
10
10
20
50
100
200
1000
500
Figure 12. MPS6601/6602 Switching Times
2599
0.8
R qVB , TEMPERATURE COEFFICIENT (mV/C)
R qVB , TEMPERATURE COEFFICIENT (mV/ C)
1.2
1.6
RqVB for VBE
2.0
2.4
2.8
1.0
10
100
1000
RqVB for VBE

2.0
2.4
2.8
1.0
10
100
1000
Figure 14. BaseEmitter Temperature

Coefficient
Figure 15. BaseEmitter Temperature

Coefficient
1.0 MS
500
TC = 25C
200
1.0 MS
500
1.6
1 k
TC = 25C
200
1.0 s
100
1.0 s
100
50
MPS6601
MPS6602
CURRENT LIMIT
THERMAL LIMIT
20
10
1.0
MPS6651
50
MPS6652
CURRENT LIMIT
THERMAL LIMIT
20
10
2.0
5.0
10
40
20
1.0
2.0
5.0
10
20
40
Figure 16. Safe Operating Area
Figure 17. Safe Operating Area
1.0
1.0
TJ = 25C
1.2
1k
0.8
0.6
IC =
1000 mA
0.4
IC =
50 mA
0.2
IC =
10 mA
IC =
100 mA
IC =
500 mA
IC =
250 mA
0
0.01
2600
0.8
0.1
1.0
10
100
TJ = 25C
0.8
0.6
IC =
1000 mA
0.4
0.2
0
0.01
IC =
10 mA
IC =
50 mA
0.1
IC =
100 mA
IC =
500 mA
IC =
250 mA
1.0
10
Figure 18. MPS6601/6602 Saturation Region
Figure 19. MPS6651/6652 Saturation Region
100

THERMAL RESISTANCE

1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1 0.05
0.07 0.02
0.05
P(pk)
SINGLE PULSE
t1
0.01
SINGLE PULSE
0.03
t2
0.02
0.01
0.001
RJC(t) = (t) JC
RJC = 100C/W MAX
RJA(t)d = r(t) JA
RJA = 357C/W MAX
D CURVES APPLY FOR
POWER PULSE TRAIN
SHOWN READ TIME AT t1

0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
t, TIME (SECONDS)
2601
MOTOROLA

NPN Silicon
MPS6714
MPS6715
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
MPS6714
MPS6715
Vdc
VCBO
MPS6714
MPS6715
5.0
IC
1.0
Adc

Derate above 25C
PD
1.0
8.0
Watts
mW/C

Derate above 25C
PD
2.5
20
Watts
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit
RqJA
125
C/W
RqJC
50
C/W
CASE 2905, STYLE 1

TO92 (TO226AE)
Vdc
40
50
VEBO

Temperature Range
30
40
Vdc
Characteristic

Symbol
Characteristic
Min
Max
30
40
40
50
5.0
0.1
0.1
0.1
Unit
OFF CHARACTERISTICS
(IC = 10 mAdc, IB = 0)
(IC = 100 mAdc, IE = 0)
V(BR)CEO
MPS6714
MPS6715
V(BR)CBO
MPS6714
MPS6715

(IE = 100 mAdc, IC = 0)
(VCB = 40 Vdc, IE = 0)
(VCB = 50 Vdc, IE = 0)
2602
V(BR)EBO
Vdc
IEBO
Vdc
Adc
ICBO
MPS6714
MPS6715

(VEB = 5.0 Vdc, IC = 0)
Vdc
Adc
MPS6714 MPS6715
Characteristic
Symbol
Min
Max
60
50
250
Unit
DC Current Gain
(IC = 1000 mAdc, VCE = 1.0 Vdc)
hFE

(IC = 1000 mAdc, IB = 100 mAdc)
VCE(sat)
0.5
Vdc

(IC = 1000 mAdc, VCE = 1.0 Vdc)
VBE(on)
1.2
Vdc
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Ccb
30
pF

hfe
2.5
25

1.0
300
h FE , CURRENT GAIN
200
100
70
VCE = 1.0 V
TJ = 25C
50
V, VOLTAGE (VOLTS)
20
50
100
200
0.6
IC =
1000 mA
0.4
IC =
10 mA
0.2
IC =
50 mA
IC =
100 mA
IC =
IC = 500 mA
250 mA
0.5 1.0 2.0
5.0
10 20
0.4
0
1.0 2.0
0.01 0.02 0.05 0.1 0.2
0.2
1000
TJ = 25C
0.6
500
5.0 10 20
qVB , TEMPERATURE COEFFICIENT (mV/C)
10
0.8
0.8
30
1.0
TJ = 25C
50 100 200 500 1000
0.8
1.2
1.6
qVB FOR VBE

2.0
2.4
2.8
1.0 2.0
5.0 10 20
50 100 200 500 1000
50 100
2603
80
300
TJ = 25C
200
C, CAPACITANCE (pF)
MPS6714 MPS6715
100
70
VCE = 10 V
TJ = 25C
f = 20 MHz
50
60
40
Cibo
20
Cobo
30
10
20
100
50
200
Cobo
Cibo
1000
5.0
1.0
10
2.0
15
3.0
20
4.0
25
5.0
1k
1.0 s
500
1.0 ms 100 ms
200
TA = 25C
100
DUTY CYCLE 10%

CURRENT LIMIT
THERMAL LIMIT
50
20
10
1.0
TC = 25C
MPS6714
MPS6715
2.0
5.0
10
20
30 40
Figure 7. Active Region Safe Operating

Area
2604
MOTOROLA

NPN Silicon
MPS6717
COLLECTOR
3
2
BASE
1
EMITTER
1
2
CASE 2905, STYLE 1

TO92 (TO226AE)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
80
Vdc
VCBO
80
Vdc
VEBO
5.0
Vdc
IC
500
mAdc

Derate above 25C
PD
1.0
8.0
Watts
mW/C

Derate above 25C
PD
2.5
20
Watts
mW/C
TJ, Tstg
55 to +150

Temperature Range
Symbol
Max
Unit
Characteristic
RqJA
125
C/W
RqJC
50
C/W

Symbol
Min
Max
Unit

(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
80
Vdc

(IC = 100 mAdc, IE = 0)
V(BR)CBO
80
Vdc

(IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
Vdc

(VCB = 60 Vdc, IE = 0)
ICBO
0.1
Adc

(VEB = 5.0 Vdc, IC = 0)
IEBO
10
Adc
Characteristic
OFF CHARACTERISTICS
2605
MPS6717
Characteristic
Symbol
Min
Max
80
50
250
Unit
ON CHARACTERISTICS
DC Current Gain
hFE

VCE(sat)
0.5
Vdc

VBE(on)
1.2
Vdc
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Ccb
30
pF

hfe
2.5
25
400
TJ = 125C
VCE = 1.0 V
200
25C
55C
100
80
60
40
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
300
500
1.0
1.0
TJ = 25C
TJ = 25C
0.8
0.6
0.8
IC = 10 mA
50
mA
100 mA
250 mA
V, VOLTAGE (VOLTS)
500 mA
0.4
0.2
0.6
0.4
0.2
0
0.05
0.1
0.2
1.0
0.5
2.0
5.0
10
20
2606
50
0
0.5
1.0
2.0
20
5.0
10
50
100
200
500
80
0.8
TJ = 25C
60
1.2
40
C, CAPACITANCE (pF)
MPS6717
1.6
VB for VBE
2.0
2.4
Cibo
20
10
8.0
6.0
2.8
0.5
1.0
2.0
5.0
20
50
10
100
200
Cobo
4.0
0.1
500
0.2
0.5 1.0 2.0

5.0 10
20
100
300
200
VCE = 2.0 V
TJ = 25C
50
100
70
50
DUTY CYCLE 10%

2k
1.0 ms
1k
100 s
500
TA = 25C
200
TC = 25C
dc
CURRENT LIMIT
THERMAL LIMIT
100
50
1.0 s
dc
20
30
2.0
3.0
5.0 7.0 10
20 30
50 70 100
200
10
1.0
MPS6717
2.0
5.0
10
20
60 80 100
2607
MOTOROLA
One Watt Darlington Transistors

NPN Silicon
MPS6724
MPS6725
COLLECTOR 3
BASE
2
EMITTER 1
MAXIMUM RATINGS
Rating
Symbol
MPS6724
MPS6725
Unit
VCES
40
50
Vdc
VCBO
50
60
Vdc
VEBO
12
Vdc
IC
1000
mAdc

Derate above 25C
PD
1.0
8.0
Watts
mW/C

Derate above 25C
PD
2.5
20
Watts
mW/C
TJ, Tstg
55 to +150

Temperature Range
1
3
CASE 2905, STYLE 1

TO92 (TO226AE)
Characteristic
Symbol
Max
Unit
RqJA
125
C/W
RqJC
50
C/W

Characteristic
Symbol
Min
Max
40
50
50
60
12
100
100
100
Unit
OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0)
(IC = 1.0 mAdc, IE = 0)
V(BR)CES
MPS6724
MPS6725
V(BR)CBO
MPS6724
MPS6725

(IE = 10 mAdc, IC = 0)
(VCB = 30 Vdc, IE = 0)
(VCB = 40 Vdc, IE = 0)
(VEB = 10 Vdc, IC = 0)
Vdc
V(BR)EBO
Vdc
ICBO
MPS6724
MPS6725
IEBO
Vdc
nAdc
nAdc
REV 1
2608
MPS6724 MPS6725
Characteristic
Symbol
Min
Max
25,000
4,000
40,000
Unit
DC Current Gain
(IC = 1000 mAdc, VCE = 5.0 Vdc)
hFE

(IC = 1000 mAdc, IB = 2.0 mAdc)
VCE(sat)
1.5
Vdc

(IC = 1000 mAdc, VCE = 5.0 Vdc)
VBE(on)
2.0
Vdc
fT
100
1000
MHz
Ccb
10
pF

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

CURRENT LIMIT
DUTY CYCLE 10%
THERMAL LIMIT
3.0 k
2.0 k
100 ms
1.0 ms
1.0 k
1.0 s
500
TA = 25C
200
1.5
TC = 25C
2.0
5.0
10
20
30

Area
200 k
TJ = 125C
100 k
70 k
50 k
25C
30 k
20 k
10 k
7.0 k
5.0 k
55C
3.0 k
2.0 k
5.0 7.0 10
VCE = 5.0 V
20
30
50 70 100
200 300
500
3.0
TJ = 25C
IC =
10 mA
2.5
IC =
50 mA
IC =
500 mA
IC =
250 mA
2.0
1.5
1.0
0.5
0.1
0.2
0.5 1.0 2.0
5.0
10
20
50
100 200
500 1000
2609
MPS6724 MPS6725
1.6
TJ = 25C
V, VOLTAGE (VOLTS)
1.4
1.2
1.0
0.8
0.6

5.0 7.0 10
20
30
50
70 100
200 300
1.0
2.0
55C TO 25C
3.0
25C TO 125C
4.0
qVB FOR VBE

5.0
55C TO 25C
6.0
500
5.0 7.0 10
20
200 300
500
20
TJ = 25C
C, CAPACITANCE (pF)
h FE , SMALLSIGNAL CURRENT GAIN
70 100
VCE = 5.0 V
TJ = 25C
f = 100 MHz
1.0
0.8
0.6
0.4
2610
50
4.0
0.2
0.5
30
2.0
25C TO 125C
*qVC FOR VCE(sat)
10
7.0
Cibo
5.0
Cobo
3.0
2.0
1.0
2.0
5.0
10
20
50
100
200
500
0.04
0.1
0.2
0.4
1.0
2.0
4.0
10
20
40
MOTOROLA

PNP Silicon
MPS6726
MPS6727
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
MPS6726
MPS6727
Vdc
VCBO
MPS6726
MPS6727
5.0
IC
1.0
Adc

Derate above 25C
PD
1.0
8.0
Watts
mW/C

Derate above 25C
PD
2.5
20
Watts
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit
RqJA
125
C/W
RqJC
50
C/W
CASE 2905, STYLE 1

TO92 (TO226AE)
Vdc
40
50
VEBO

Temperature Range
30
40
Vdc
Characteristic

Symbol
Characteristic
Min
Max
30
40
40
50
5.0
0.1
0.1
0.1
Unit
OFF CHARACTERISTICS
(IC = 10 mAdc, IB = 0)
(IC = 100 mAdc, IE = 0)
V(BR)CEO
MPS6726
MPS6727
V(BR)CBO
MPS6726
MPS6727

(IE = 100 mAdc, IC = 0)
(VCB = 40 Vdc, IE = 0)
(VCB = 50 Vdc, IE = 0)
(VEB = 5.0 Vdc, IC = 0)
Vdc
V(BR)EBO
Vdc
Adc
ICBO
MPS6726
MPS6727
IEBO
Vdc
Adc
2611
MPS6726 MPS6727
Characteristic
Symbol
Min
Max
60
50
250
Unit
DC Current Gain
(IC = 1000 mAdc, VCE = 1.0 Vdc)
hFE

(IC = 1000 mAdc, IB = 100 mAdc)
VCE(sat)
0.5
Vdc

(IC = 1000 mAdc, VCE = 1.0 Vdc)
VBE(on)
1.2
Vdc
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Ccb
30
pF

hfe
2.5
25

1.0
h FE , CURRENT GAIN
200
100
70
VCE = 1.0 V
TJ = 25C
50
20
10
20
50
100
200
500
1000
0.6
0.4
0.2
50 100
qV B, TEMPERATURE COEFFICIENT (mV/ C)
V, VOLTAGE (VOLTS)
2612
IC =
IC =
IC =
250 500 mA 1000 mA
mA
0
1.0 2.0
IC =
100
mA
0.4
0.2
IC =
50 mA
TJ = 25C
0.6
IC =
10 mA
TJ = 25C
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
1.0
0.8
0.8
5.0
10
20
50 100 200
500 1000
0.8
1.2
1.6
qVB for VBE

2.0
2.4
2.8
1.0 2.0
5.0
10
20
50 100 200
500 1000
300
160
TJ = 25C
200
C, CAPACITANCE (pF)
MPS6726 MPS6727
VCE = 10 V
TJ = 25C
f = 20 MHz
100
70
50
120
80
Cibo
40
Cobo
30
10
0
20
50
100
200
500
1000
Cobo
Cibo
5.0
1.0
10
15
20
2.0
3.0
4.0
1.0 k
1.0 s
500
1.0 ms
100 ms
TA = 25C
TC = 25C
200
100
25
5.0
DUTY CYCLE 10%

MPS6726
MPS6727
50
CURRENT LIMIT
THERMAL LIMIT
20
10
1.0
2.0
5.0
10
20 30 40

Area
2613
MOTOROLA
NPN
MPS8098
MPS8099*
PNP
MPS8598
MPS8599*
COLLECTOR
3
COLLECTOR
3
2
BASE
2
BASE
NPN
PNP
1
EMITTER
1
EMITTER
MAXIMUM RATINGS
Symbol
MPS8098
MPS8598
MPS8099
MPS8599
Unit
VCEO
60
80
Vdc
VCBO
60
80
Vdc
MPS8099
MPS8598
MPS8599
6.0
5.0
Rating
VEBO

for PNP transistors
Vdc
IC
500
mAdc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
Watts
mW/C
TJ, Tstg
55 to +150

Temperature Range
CASE 2904, STYLE 1

TO92 (TO226AA)
Characteristic
Symbol
Max
Unit
RqJA
200
C/W
RqJC
83.3
C/W

Symbol
Characteristic
Min
Max
60
80
60
80
6.0
5.0
0.1
0.1
0.1
0.1
0.1
Unit
OFF CHARACTERISTICS
(IC = 10 mAdc, IB = 0)
(IC = 100 Adc, IE = 0)
(IE = 10 Adc, IC = 0)
V(BR)CEO
MPS8098, MPS8598
MPS8099, MPS8599
V(BR)CBO
MPS8098, MPS8598
MPS8099, MPS8599
Vdc
V(BR)EBO
MPS8098, MPS8099
MPS8598, MPS8599

(VCE = 60 Vdc, IB = 0)
ICES

(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
MPS8098, MPS8598
MPS8099, MPS8599

(VEB = 6.0 Vdc, IC = 0)
(VEB = 4.0 Vdc, IC = 0)
MPS8098, MPS8099
MPS8598, MPS8599
Vdc
Vdc
Adc
ICBO
Adc
Adc
IEBO
2614

Characteristic
Symbol
Min
Max
100
100
75
300
0.4
0.3
0.5
0.6
0.7
0.8
150
6.0
8.0
25
30
Unit
DC Current Gain
hFE

VCE(sat)
Vdc
VBE(on)
Vdc
MPS8098, MPS8598
MPS8099, MPS8599

fT
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Cobo
Cibo
pF
MPS8098, MPS8099
MPS8598, MPS8599
TURNON TIME
TURNOFF TIME
VCC
1.0 V
pF
MPS8098, MPS8099
MPS8598, MPS8599
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
VCC
+40 V
+VBB
+40 V
5.0 ms
100
RL
100
OUTPUT
+10 V
Vin
* CS
5.0 mF
RL
OUTPUT
Vin
RB
0
tr = 3.0 ns
MHz
t 6.0 pF
RB
* CS
5.0 mF
t 6.0 pF
100
100
5.0 ms
tr = 3.0 ns
2615
300
TJ = 25C
200
5.0 V
VCE = 1.0 V
100
70
50
30
1.0
2.0
3.0
5.0 7.0 10
20
30
50 70 100

300
TJ = 25C
200
5.0 V
VCE = 1.0 V
100
70
50
30
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
Figure 2. MPS8098/99 CurrentGain

Bandwidth Product
Figure 3. MPS8598/99 CurrentGain

Bandwidth Product
40
40
25C
TTJJ==25C
TJ = 25C
20
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
20
Cibo
10
8.0
6.0
Cibo
10
8.0
6.0
Cobo
4.0
4.0
Cobo
2.0
0.1
1.0 k
700
500
0.5
1.0
2.0
5.0
20
10
50
5.0
50 100
10 20
Figure 5. MPS8598/99 Capacitance
1.0 k
700
500
ts
t, TIME (ns)
30
200
tf
100
70
50
tr
30
20
20
20
tr
10
30
50
70
100
VCC = 40 V
IC/IB = 10
IB1 = IB2
TJ = 25C
ts
300
tf
10
2.0
Figure 4. MPS8098/99 Capacitance
100
70
50
2616
0.5 1.0
200
10
2.0
0.1 0.2
100
VCC = 40 V
IC/IB = 10
IB1 = IB2
TJ = 25C
300
t, TIME (ns)
0.2
200
10
20
30
50
70
100
200
1.0 k
700
500
1.0 k
700
500
300
300
200
200
100
70
50
CURRENT LIMIT
THERMAL LIMIT
30
20
MPS8098
MPS8099
DUTY CYCLE 10%

10
1.0
100
70
50
2.0
3.0
5.0 7.0 10
20
30
20
10
50
30
CURRENT LIMIT
THERMAL LIMIT
MPS8598
DUTY CYCLE 10%
MPS8599
70 100
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
Figure 8. MPS8098/99 ActiveRegion Safe

Operating Area
Figure 9. MPS8598/99 ActiveRegion Safe

Operating Area
400
300
TJ = 125C
25C
200
55C
100
VCE = 5.0 V
80
60
40
0.2 0.3 0.5
1.0
1.0
2.0 3.0 5.0
10
20 30
50
25C
100
70
VCE = 5.0 V
50
30
0.2
100 200
55C
0.5
1.0 2.0
10
20
50 100 200
1.0
TJ = 25C
TJ = 25C
0.8
0.6
VBE @ VCE = 5.0 V
0.4
0.2
0.6
VBE @ VCE = 5.0 V
0.4
0.2
0
0.2
5.0
0.8
V, VOLTAGE (VOLTS)
200
V, VOLTAGE (VOLTS)
TJ = 125C
0.5
1.0
2.0
5.0
10
20
50
100
200
0
0.2
0.5
1.0
2.0
5.0
10
20
50
100
Figure 12. MPS8098/99 ON Voltages
Figure 13. MPS8598/99 ON Voltages
200
2617
2.0
TJ = 25C
IC =
50 mA
IC =
20 mA
1.6
IC =
200 mA
IC =
100 mA
1.2
0.8
0.4
IC =
10 mA
0
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
RqVB FOR VBE

55C TO 125C
2.2
2.6
3.0
0.2
r(t), NORMALIZED TRANSIENT

THERMAL RESISTANCE
IC =
100 mA
IC =
200 mA
1.2
0.8
0.4
TJ = 25C
0
0.05 0.1
0.02
0.2
0.5
1.0
2.0
10
5.0
Figure 15. MPS8598/99 Collector Saturation

Region
1.8
0.5
1.0
2.0
5.0
10
20
50
100
200
20
1.0
1.4
1.8
RqVB FOR VBE

55C TO 125C
2.2
2.6
3.0
0.2
0.5
1.0
2.0
5.0
10
20
50
100
Figure 16. MPS8098/99 BaseEmitter

Temperature Coefficient
Figure 17. MPS8598/99 BaseEmitter

200
D = 0.5
0.2
0.3
0.1
0.07
0.05
IC =
50 mA
IC =
20 mA
Figure 14. MPS8098/99 Collector Saturation

Region
1.4
0.2
IC =
10 mA
1.6
1.0
1.0
0.7
0.5
2.0
0.1
0.05
0.02
SINGLE PULSE
ZJC(t) = r(t) RJC

ZJA(t) = r(t) RJA
D CURVES APPLY FOR
POWER PULSE TRAIN
(SEE AN469)
P(pk)
0.01
t1
SINGLE PULSE
0.03
t2
0.02
0.01
1.0
2.0
5.0
10
20
50
100
200
500
1.0 k
2.0 k
5.0 k
10 k
20 k
50 k
100 k
t, TIME (ms)
Figure 18. MPS8098, MPS8099, MPS8598 and MPS8599 Thermal Response
2618
MOTOROLA
NPN
MPSA05
MPSA06*
PNP
MPSA55
MPSA56*
COLLECTOR
3
COLLECTOR
3
2
BASE
2
BASE
NPN
PNP
1
EMITTER
1
EMITTER

for PNP transistors
MAXIMUM RATINGS
Symbol
MPSA05
MPSA55
MPSA06
MPSA56
Unit
VCEO
60
80
Vdc
VCBO
60
80
Vdc
Rating
VEBO
4.0
Vdc
IC
500
mAdc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
Watts
mW/C
TJ, Tstg
55 to +150

Temperature Range
1
2
CASE 2904, STYLE 1

TO92 (TO226AA)
Characteristic
Symbol
Max
Unit
RqJA(1)
200
C/W
RqJC
83.3
C/W

Characteristic
Symbol
Min
Max
Unit
60
80
V(BR)EBO
4.0
Vdc
ICES
0.1
Adc
0.1
0.1
OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
MPSA05, MPSA55
MPSA06, MPSA56

(IE = 100 Adc, IC = 0)
(VCE = 60 Vdc, IB = 0)
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
Vdc
Adc
ICBO
MPSA05, MPSA55
MPSA06, MPSA56
300 ms, Duty Cycle
2.0%.
2619
NPN MPSA05 MPSA06 PNP MPSA55 MPSA56

Characteristic
Symbol
Min
Max
100
100
Unit
ON CHARACTERISTICS
DC Current Gain
hFE

VCE(sat)
0.25
Vdc
VBE(on)
1.2
Vdc
MPSA05
MPSA06
100
MPSA55
MPSA56
50

(IC = 10 mA, VCE = 2.0 V, f = 100 MHz)
fT
MHz
TURNON TIME
TURNOFF TIME
VCC
1.0 V
VCC
+40 V
+VBB
+40 V
5.0 ms
100
RL
100
OUTPUT
+10 V
Vin
tr = 3.0 ns
OUTPUT
Vin
RB
0
* CS
5.0 mF
RL
t 6.0 pF
RB
* CS
5.0 mF
t 6.0 pF
100
100
5.0 ms
tr = 3.0 ns
2620
300
VCE = 2.0 V
TJ = 25C
200
100
70
50
30
2.0
3.0
5.0 7.0 10
20
30
50
70 100
200
30
20
2.0 3.0
5.0 7.0 10
20 30
50 70 100
200
100
TJ = 25C
TJ = 25C
70
C, CAPACITANCE (pF)
50
Cibo
20
10
8.0
Cobo
4.0
0.1
0.2
0.5
1.0
2.0
5.0
10
50
20
Cibo
30
20
Cobo
10
7.0
5.0
0.1 0.2
100
0.5 1.0
2.0
5.0
10 20
50 100
Figure 4. MPSA05/06 Capacitance
Figure 5. MPSA55/56 Capacitance
1.0 k
700
500
1.0 k
700
500
ts
300
200
100
70
50
tf
VCC = 40 V
IC/IB = 10
IB1 = IB2
TJ = 25C
5.0 7.0 10
200
100
70
50
30
tr
20
20
30
50
70 100
200 300
ts
300
t, TIME (ns)
C, CAPACITANCE (pF)
50
Figure 3. MPSA55/56 CurrentGain

Bandwidth Product
6.0
t, TIME (ns)
70
Figure 2. MPSA05/06 CurrentGain

Bandwidth Product
40
10
100
60
20
VCE = 2.0 V
TJ = 25C
80
30
200
500
tf
VCC = 40 V
IC/IB = 10
IB1 = IB2
TJ = 25C
10
5.0 7.0 10
20 30
50 70 100
tr
200 300
Figure 6. MPSA05/06 Switching Time
Figure 7. MPSA55/56 Switching Time
500
2621
1.0 k
700
500
1.0 k
700
500
100 ms
1.0 ms
300
300
1.0 s
TC = 25C
200
20
MPSA05
10
1.0
2.0
3.0
5.0 7.0 10
TA = 25C
100
70
50
CURRENT LIMIT
THERMAL LIMIT
30
1.0 s
TC = 25C
200
TA = 25C
100
70
50
100 ms
1.0 ms
MPSA06
20
CURRENT LIMIT
THERMAL LIMIT
30
20
MPSA55
10
50
30
70 100
1.0
2.0 3.0
5.0 7.0 10
MPSA56
20 30
Figure 8. MPSA05/06 ActiveRegion Safe

Operating Area
Figure 9. MPSA55/56 ActiveRegion Safe

Operating Area
400
400
TJ = 125C
TJ = 125C
VCE = 1.0 V
25C
55C
100
80
60
1.0
1.0
2.0 3.0 5.0
10
20 30
50
100
200
25C
55C
100
80
60
40
0.5 1.0 2.0
200 300 500
50
100 200
Figure 10. MPSA05/06 DC Current Gain
Figure 11. MPSA55/56 DC Current Gain
1.0
TJ = 25C
0.2
500
TJ = 25C
0.8
0.4
0.6
0.4
0.2
2622
20
0.6
0
0.5
5.0 10
0.8
V, VOLTAGE (VOLTS)
200
V, VOLTAGE (VOLTS)
VCE = 1.0 V
40
0.5
50 70 100
1.0
2.0
5.0
10
20
50
100
200
500
0
0.5
1.0 2.0
5.0
10
20
50
100 200
Figure 12. MPSA05/06 ON Voltages
Figure 13. MPSA55/56 ON Voltages
500
1.0
TJ = 25C
0.8
IC =
250 mA
IC =
100 mA
IC =
50 mA
IC =
500 mA
0.6
0.4
IC =
10 mA
0.2
0
0.05
0.1
0.2
0.5
2.0
1.0
5.0
10
20
50
1.0
TJ = 25C
0.8
IC =
250 mA
IC =
100 mA
IC =
50 mA
0.6
0.4
IC =
10 mA
0.2
0
0.05 0.1 0.2
0.5
1.0
2.0
5.0
10
20
50
Figure 14. MPSA05/06 Collector Saturation

Region
Figure 15. MPSA55/56 Collector Saturation

Region
1.2
1.6
RqVB for VBE
2.0
2.4
2.8
0.5
1.0
2.0
5.0
10
20
50
100
200
500
0.8
1.2
1.6
RqVB for VBE
2.0
2.4
2.8
0.5 1.0 2.0
5.0
10
20
50
100 200
Figure 16. MPSA05/06 BaseEmitter

Figure 17. MPSA55/56 BaseEmitter

1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2 0.1
0.05
0.1
0.07
0.05
IC =
500 mA
0.8
r(t), NORMALIZED TRANSIENT

THERMAL RESISTANCE
0.02
SINGLE PULSE
ZJC(t) = r(t) RJC

ZJA(t) = r(t) RJA
D CURVES APPLY FOR
POWER PULSE TRAIN
(SEE AN469)
P(pk)
0.01
t1
SINGLE PULSE
0.03
t2
0.02
500
0.01
1.0
2.0
5.0
10
20
50
100
200
500
1.0 k
2.0 k
5.0 k
10 k
20 k
50 k
100 k
t, TIME (ms)
Figure 18. MPSA05, MPSA06, MPSA55 and MPSA56 Thermal Response
2623
MOTOROLA
MPSA13
MPSA14 *
NPN Silicon
COLLECTOR 3
BASE
2
EMITTER 1
1
2
CASE 2904, STYLE 1

TO92 (TO226AA)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCES
30
Vdc
VCBO
30
Vdc
VEBO
10
Vdc
IC
500
mAdc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
Watts
mW/C
TJ, Tstg
55 to +150

Temperature Range
Symbol
Max
Unit
Characteristic
RqJA
200
C/W
RqJC
83.3
C/W

Symbol
Min
Max
Unit
V(BR)CES
30
Vdc

(VCB= 30 Vdc, IE = 0)
ICBO
100
nAdc

(VEB= 10 Vdc, IC = 0)
IEBO
100
nAdc
Characteristic
OFF CHARACTERISTICS
(IC = 100 Adc, IB = 0)
2624
MPSA13 MPSA14
Symbol
Min
Max
MPSA13
MPSA14
5,000
10,000
MPSA13
MPSA14
10,000
20,000
Characteristic
Unit
DC Current Gain
hFE

VCE(sat)
1.5
Vdc

VBE(on)
2.0
Vdc
fT
125
MHz

2. fT = |hfe| S ftest.
RS
in
en
IDEAL
TRANSISTOR
2625
MPSA13 MPSA14
(VCE = 5.0 Vdc, TA = 25C)
500
2.0
BANDWIDTH = 1.0 Hz
RS 0
200
BANDWIDTH = 1.0 Hz
100
10 A
50
100 A
20
IC = 1.0 mA
10
1.0
0.7
0.5
IC = 1.0 mA
0.3
0.2
100 A
0.1
0.07
0.05
10 A
0.03
0.02
10 20
5.0
10 20
50 100 200
500 1 k 2 k 5 k 10 k 20 k
f, FREQUENCY (Hz)
50 k 100 k
50 100 200
50 k 100 k
14
200

12
100
500 1 k 2 k 5 k 10 k 20 k
f, FREQUENCY (Hz)
IC = 10 A
70
50
100 A
30
20
1.0 mA
10
1.0
2.0
10 A
8.0
100 A
6.0
4.0
IC = 1.0 mA
2.0
5.0
10
20
50 100 200
500
2626
10
100
0
0
1.0
2.0
5.0
10
20
50 100 200
500
100
0
MPSA13 MPSA14
20
4.0
TJ = 25C
C, CAPACITANCE (pF)
10
7.0
Cibo
Cobo
5.0
3.0
2.0
0.04
0.1
0.2
0.4
1.0 2.0 4.0
10
20
2.0
1.0
0.8
0.6
0.4
0.2
0.5
40
200 k
TJ = 125C
25C
30 k
20 k
10 k
7.0 k
5.0 k
55C
VCE = 5.0 V
3.0 k
2.0 k
5.0 7.0
10
20 30
50 70 100
200 300
500
TJ = 25C
V, VOLTAGE (VOLTS)
1.4
1.2
1.0
0.8
0.6
20 30
50 70 100 200 300
0.5 10 20
50
100 200
500
TJ = 25C
2.5
IC = 10 mA
50 mA
250 mA
500 mA
2.0
1.5
1.0
0.5
0.1 0.2
0.5 1.0 2.0 5.0 10 20 50 100 200

500 1000
1.6
10
2.0
3.0
5.0 7.0
1.0
100 k
70 k
50 k
VCE = 5.0 V
f = 100 MHz
TJ = 25C
500
1.0
2.0
25C TO 125C
*RqVC FOR VCE(sat)

55C TO 25C
3.0
25C TO 125C
4.0
qVB FOR VBE

5.0
55C TO 25C
6.0
5.0 7.0 10
20 30
50 70 100
200 300
500
2627
MPSA13 MPSA14

1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
0.05
SINGLE PULSE
0.1
0.07
0.05
SINGLE PULSE
0.03
0.02
0.01
0.1
0.2
0.5
1.0
2.0
10
5.0
20
50
t, TIME (ms)
100
200
500
1.0 k
2.0 k
5.0 k
10 k
1.0 k
700
500
300
200
FIGURE A
1.0 ms
tP
TA = 25C
TC = 25C
100 s
PP
1.0 s
100
70
50
t1
30
CURRENT LIMIT
THERMAL LIMIT
20
10
0.4 0.6
1/f
DUTY CYCLE
1.0
2.0
4.0 6.0
10
20
2628
PP
40
+ t1 f + ttP1
MOTOROLA
Chopper Transistor
MPSA17
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
40
Vdc
VEBO
15
Vdc
IC
100
mAdc

Derate above 25C
PD
350
2.8
mW
mW/C

Derate above 25C
PD
1.0
8.0
Watts
mW/C
TJ, Tstg
55 to +150

Temperature Range
CASE 2904, STYLE 1

TO92 (TO226AA)
Characteristic
Symbol
Max
Unit
RqJA
357
C/W
RqJC
125
C/W

Symbol
Min
Max
Unit

(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
Vdc

(IE = 0.1 mAdc, IC = 0)
V(BR)EBO
15
Vdc

(VCB = 30 Vdc, IE = 0)
ICBO
100
nAdc

(VEB = 10 Vdc, IC = 0)
IEBO
100
nAdc
Characteristic
OFF CHARACTERISTICS
(Replaces MPSA16/D)
2629
MPSA17
Characteristic
Symbol
Min
Max
Unit
hFE
200
600
VCE(sat)
0.25
Vdc
fT
80
MHz
Cobo
4.0
pF
ON CHARACTERISTICS
DC Current Gain

Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
2630
MPSA17
500
TA = 25C
VCE = 10 Vdc
300
200
100
70
50
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
500
1.8
1.6
V, VOLTAGE (VOLTS)
700
400
300
200
1.4
1.2
1.0
0.8
VBE(on)
0.6
0.4
0.2
100
0.1
2.0
f = 1.0 kHz
TA = 25C
VCE = 5.0 Vdc
0.3
0.5 0.7 1.0
3.0
0
1.0
5.0 7.0 10
2.0 3.0
5.0
10
20
30
50
Figure 2. Small Signal Current Gain
10
200
100
70
50
TA = 25C
VCE = 10 Vdc
30
20
0.2
VCE (SAT) @ IC/IB = 10
Cob , OUTPUT CAPACITANCE (pF)
h fe , SMALL SIGNAL CURRENT GAIN
1000
100
TA = 25C
7.0
4.0
2.0
1.0
0.5
1.0
2.0
5.0
10
20
0.4
0.7 1.0
2.0
4.0
7.0
10
20
40
2631
MOTOROLA
MPSA18
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
1
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
45
Vdc
VCBO
45
Vdc
VEBO
6.5
Vdc
IC
200
mAdc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
Watts
mW/C
TJ, Tstg
55 to +150
Symbol

Temperature Range
CASE 2904, STYLE 1

TO92 (TO226AA)
Characteristic
Max
Unit
RqJA(1)
200
C/W
RqJC
83.3
C/W

Symbol
Min
Typ
Max
Unit

(IC = 10 mAdc, IB = 0)
V(BR)CEO
45
Vdc

(IC = 100 mAdc, IE = 0)
V(BR)CBO
45
Vdc

(IE = 10 Adc, IC = 0)
V(BR)EBO
6.5
Vdc
ICBO
1.0
50
nAdc
Characteristic
OFF CHARACTERISTICS

(VCB = 30 Vdc, IE = 0)
2632
MPSA18
Characteristic
Symbol
Min
Typ
Max
400
500
500
500
580
850
1100
1150
1500
0.08
0.2
0.3
Unit
DC Current Gain
(IC = 10 Adc, VCE = 5.0 Vdc)
(IC = 100 Adc, VCE = 5.0 Vdc)
hFE

VCE(sat)
Vdc

VBE(on)
0.6
0.7
Vdc
fT
100
160
MHz
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Ccb
1.7
3.0
pF
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Ceb
5.6
6.5
pF
Noise Figure
(IC = 100 Adc, VCE = 5.0 Vdc, RS = 10 k, f = 1.0 kHz)
(IC = 100 Adc, VCE = 5.0 Vdc, RS = 1.0 k, f = 100 Hz)
NF
0.5
4.0
1.5
Equivalent Short Circuit Noise Voltage

(IC = 100 Adc, VCE = 5.0 Vdc, RS = 1.0 k, f = 100 Hz)
VT
6.5

dB
nV Hz
RS
in
en
IDEAL
TRANSISTOR
2633
MPSA18
(VCE = 5.0 Vdc, TA = 25C)
NOISE VOLTAGE
30
30
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
20
RS 0
IC = 10 mA
20
3.0 mA
10
1.0 mA
7.0
5.0
RS 0
f = 10 Hz
10
100 Hz
7.0
10 kHz
1.0 kHz
5.0
300 A
3.0
10
20
50 100 200
3.0
0.01 0.02
500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
f, FREQUENCY (Hz)
IC = 10 mA
3.0 mA
1.0 mA
300 A
100 A
0.3
0.2
RS 0
0.1
10
20
10 A
50 100 200
10
16
3.0
1.0
0.7
0.5
5.0
20
BANDWIDTH = 1.0 Hz
2.0
0.05 0.1 0.2

0.5 1.0
2.0
10
7.0
5.0
100 kHz

12
500 A
8.0
IC = 1.0 mA
100 A
10 A
4.0
30 A
0
10
500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
f, FREQUENCY (Hz)
20
50 100 200 500 1 k 2 k

5 k 10 k 20 k 50 k 100 k

100 Hz NOISE DATA
20
BANDWIDTH = 1.0 Hz
IC = 10 mA
16
100 A
100
70
50
3.0 mA
1.0 mA
30
300 A
20
10
7.0
5.0
30 A
10 A
300
200
IC = 10 mA
3.0 mA
1.0 mA
12
300 A
8.0
100 A
30 A
4.0
10 A
BANDWIDTH = 1.0 Hz
0
3.0
10
20
50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k

2634
10
20
50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k

MPSA18
4.0
3.0
VCE = 5.0 V
2.0
TA = 125C
25C
1.0
55C
0.7
0.5
0.4
0.3
0.2
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
0.4
RVBE, BASEEMITTER
1.0
TJ = 25C
V, VOLTAGE (VOLTS)
0.8
0.6
VBE @ VCE = 5.0 V
0.4
0.2
0.8
1.2
TJ = 25C to 125C
1.6
2.0
55C to 25C
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
50
2.4
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10
100
8.0
C, CAPACITANCE (pF)
6.0
TJ = 25C
Cob
4.0
3.0
Ceb
Cib
Ccb
2.0
1.0
0.8
0.1
0.2
1.0
2.0
5.0
0.5
10
20
50 100
50
100
20
500
300
200
100
VCE = 5.0 V
TJ = 25C
70
50
1.0
2.0
3.0
5.0 7.0 10
20 30
50 70 100
2635
MOTOROLA
MPSA20
NPN Silicon
COLLECTOR
3
2
BASE
1
2
1
EMITTER
CASE 2904, STYLE 1

TO92 (TO226AA)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
40
Vdc
VCBO
4.0
Vdc
IC
100
mAdc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
Watts
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit
RqJA(1)
200
C/W
RqJC
83.3
C/W

Temperature Range
Characteristic

Characteristic
Symbol
Min
Max
Unit

(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
Vdc

(IE = 100 Adc, IC = 0)
V(BR)EBO
4.0
Vdc
ICBO
100
nAdc
OFF CHARACTERISTICS

(VCB = 30 Vdc, IE = 0)
2636
MPSA20
Characteristic
Symbol
Min
Max
Unit
hFE
40
400
VCE(sat)
0.25
Vdc
fT
125
MHz
Cobo
4.0
pF
ON CHARACTERISTICS
DC Current Gain(2)

Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

+ 3.0 V
300 ns
DUTY CYCLE = 2%
275
+10.9 V
+ 3.0 V
10 < t1 < 500 s

DUTY CYCLE = 2%
t1
+10.9 V
10 k
0.5 V
<1.0 ns
275
10 k
0
CS < 4.0 pF*
9.1 V
< 1.0 ns
1N916
CS < 4.0 pF*
2637
MPSA20
(VCE = 5.0 Vdc, TA = 25C)
20
100
BANDWIDTH = 1.0 Hz
RS = 0
50
300 A
10
IC = 1.0 mA
100 A
7.0
5.0
10 A
3.0
20
300 A
100 A
10
5.0
2.0
1.0
30 A
0.5
30 A
BANDWIDTH = 1.0 Hz
RS
IC = 1.0 mA
10 A
0.2
2.0
0.1
10
20
50
100 200
500 1 k
f, FREQUENCY (Hz)
2k
5k
10 k
10
20
50
100 200
500 1 k
f, FREQUENCY (Hz)
2k
5k
10 k

(VCE = 5.0 Vdc, TA = 25C)
BANDWIDTH = 1.0 Hz
200 k
100 k
50 k
500 k
20 k
10 k
5k
2.0 dB
2k
1k
500
3.0 dB 4.0 dB
6.0 dB
10 dB
200
100
50
1M
500 k
BANDWIDTH = 1.0 Hz
200 k
100 k
50 k
20 k
10 k
1.0 dB
5k
2.0 dB
2k
1k
500
5.0 dB
200
100
10
20
30
50 70 100
200 300
500 700
1k
8.0 dB
10
20
500 k
3.0 dB
30
50 70 100
200 300
500 700
1k
10 Hz to 15.7 kHz
200 k
100 k
50 k
20 k
10 k
5k
NF
1.0 dB
2k
1k
500
3.0 dB
5.0 dB
8.0 dB
10
20
30
50 70 100
200 300
500 700
en2
4KTRS

2.0 dB
200
100
50
+ 20 log10
1k
Figure 7. Wideband
2638
MPSA20
400
TJ = 125C
25C
200
55C
100
80
MPSA20
VCE = 1.0 V
VCE = 10 V
60
40
0.004 0.006 0.01
0.02 0.03
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
20
30
50
70 100
100
1.0
MPSA20
TJ = 25C
0.8
IC = 1.0 mA
0.6
10 mA
50 mA
100 mA
0.4
0.2
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
TA = 25C
PULSE WIDTH = 300 s
80 DUTY CYCLE 2.0%
300 A
200 A
40
100 A
20
0
5.0 10
20
5.0
10
15
20
25
30
35
TJ = 25C
V, VOLTAGE (VOLTS)
1.2
1.0
0.6
0.4
0.2
0
0.2
2.0
5.0
10
20
0.5 1.0
40
1.4
0.1
400 A
60
0.8
IB = 500 A
50
100
1.6
0.8
25C to 125C
0
*qVC for VCE(sat)

55C to 25C
0.8
25C to 125C
1.6
qVB for VBE

2.4
0.1
0.2
55C to 25C
0.5
1.0 2.0
5.0 10 20
50
100
2639
MPSA20
1000
VCC = 3.0 V
IC/IB = 10
TJ = 25C
100
70
50
700
500
ts
300
200
t, TIME (ns)
t, TIME (ns)
300
200
tr
30
20
10
7.0
5.0
100
70
50
tf
30
VCC = 3.0 V
IC/IB = 10
IB1 = IB2
TJ = 25C
20
3.0
1.0
2.0
50 70
20 30
5.0 7.0 10
3.0
10
1.0
100
2.0
3.0
500
70 100
10
TJ = 25C
f = 100 MHz
TJ = 25C
f = 1.0 MHz
7.0
300
VCE = 20 V
200
5.0 V
100
Cib
5.0
Cob
3.0
2.0
70
50
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
1.0
0.05
50
0.2
0.5
1.0
2.0
5.0
VCE = 10 Vdc
f = 1.0 kHz
TA = 25C
3.0
2.0
1.0
0.7
0.5
0.3
MPSA20
hfe 200 @ IC = 1.0 mA
7.0
5.0
0.2
0.1
10
20
50
200
10
100
70
50
VCE = 10 Vdc
f = 1.0 kHz
TA = 25C
MPSA20
hfe 200 @ IC = 1.0 mA
30
20
10
7.0
5.0
3.0
0.2
0.5
20
1.0 2.0
5.0
10
2640
0.1
20
50
C, CAPACITANCE (pF)
20 30
5.0 7.0 10
50
100
2.0
0.1
0.2
0.5
20
1.0 2.0
5.0
10
50
100

(NORMALIZED)
MPSA20
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
FIGURE 19A
0.05
P(pk)
0.02
0.03
0.02
t1
0.01
0.01
0.01 0.02
SINGLE PULSE
0.05
0.1
0.2
0.5
t2
1.0
2.0
5.0
10
20
50
t, TIME (ms)
100 200

PULSE TRAIN SHOWN
ZJA(t) = r(t) RJA
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 k 100 k
104
VCC = 30 Vdc

103
102
ICEO
101
Example:
t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2)
r(t) is 0.22.
ICBO
AND
100
101
102
4
0
2
0
+ 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160


T = r(t) x P(pk) x RJA = 0.22 x 2.0 x 200 = 88C.
Figure 19A.
400
1.0 ms
200
100
60
40
TC = 25C
dc
dc
TJ = 150C
10
CURRENT LIMIT
THERMAL LIMIT
6.0
2.0

applicable curve.
10 s
1.0 s
TA = 25C
20
4.0
100 s
4.0
6.0 8.0 10
20
40
Figure 20.
2641
MOTOROLA
MPSA27
NPN Silicon
COLLECTOR 3
BASE
2
EMITTER 1
1
2
CASE 2904, STYLE 1

TO92 (TO226AA)
MAXIMUM RATINGS
Rating
Symbol
MPSA27
Unit
VCES
60
Vdc
VEBO
10
Vdc
IC
500
mAdc

@ TA = 25C
Derate above 25C
PD
625
5.0
mW
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit
RqJA
200
C/W

Temperature Range
Characteristic

Symbol
Min
Typ
Max
Unit

(IC = 100 Adc, VBE = 0)
V(BR)CES
60
Vdc

(IC = 100 mAdc, IE = 0)
V(BR)CBO
60
Vdc

(VCB = 30 V, IE = 0)
(VCB = 40 V, IE = 0)
(VCB = 50 V, IE = 0)
ICBO
100
nAdc

(VCE = 30 V, VBE = 0)
(VCE = 40 V, VBE = 0)
(VCE = 50 V, VBE = 0)
ICES
500
nAdc

(VEB = 10 Vdc)
IEBO
100
nAdc
Characteristic
OFF CHARACTERISTICS
2642
MPSA27
Characteristic
Symbol
Min
Typ
Max
10,000
10,000
Unit
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
(IC = 100 mA, VCE = 5.0 V)
hFE

(IC = 100 mA, IB = 0.1 mAdc)
VCE(sat)
1.5
Vdc

(IC = 100 mA, VCE = 5.0 Vdc)
VBE(on)
2.0
Vdc
hfe
1.25
2.4

(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
2643
MPSA27
VCE = 5.0 V
TA = 25C
40
VBE(S) @ IC/IB = 1.0 k
1.4
1.2
1.0
0.8
20
TA = 55C
0
1.0
V, VOLTAGE (VOLTS)
80
60
TA = 25C
1.6
TA = 125C
100
2.0 3.0
10
100
20 30
200
500
1k
10
20 30
100
200
500
1k
4.0
1.5
TA = 25C
1.3
1.2
IC = 500 mA
1.1
1.0
0.9
2.0 3.0
1.0
1.6
1.4
VCE(S) @ IC/IB = 1.0 k
0.6
hfe , SMALLSIGNAL CURRENT GAIN
h FE , DC CURRENT GAIN (k)
120
IC = 250 mA
IC = 100 mA
IC = 10 mA
0.8
0.7
VCE = 5.0 V
f = 100 MHz
TA = 25C
2.0
1.0
0.8
0.6
0.4
0.2
0.1 0.2
0.5 1.0 2.0
5.0 10
20
50 100 200
500 1 k
0.5
1.0
5.0
2.0
10
20
50
100
200
1k
500
100 ms
1.0 ms
500
1.0 s
200
TC = 25C
TA = 25C
100
50
CURRENT LIMIT
THERMAL LIMIT
20
10
1.0
2.0
4.0
6.0
10
20
40 50 60
2644
MOTOROLA
MPSA28
MPSA29*
NPN Silicon
COLLECTOR 3
BASE
2
EMITTER 1
MAXIMUM RATINGS
Rating
Symbol
MPSA28
MPSA29
Unit
VCES
80
100
Vdc
VCBO
80
100
Vdc
VEBO
12
Vdc
IC
500
mAdc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
Watts
mW/C
TJ, Tstg
55 to +150

Temperature Range
1
2
CASE 2904, STYLE 1

TO92 (TO226AA)
Characteristic
Symbol
Max
Unit
RqJA
200
C/W
RqJC
83.3
C/W

Characteristic
Symbol
Min
Typ
Max
80
100
80
100
12
100
100
500
500
100
Unit
OFF CHARACTERISTICS
(IC = 100 Adc, VBE = 0)
(IC = 100 mAdc, IE = 0)
V(BR)CES
MPSA28
MPSA29
Vdc
V(BR)CBO
MPSA28
MPSA29

(IE = 10 mAdc, IC = 0)
V(BR)EBO

(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
MPSA28
MPSA29

(VCE = 60 Vdc, VBE = 0)
(VCE = 80 Vdc, VBE = 0)
MPSA28
MPSA29
Vdc
ICBO
nAdc
ICES

(VEB = 10 Vdc, IC = 0)
IEBO
Vdc
nAdc
nAdc
2645
MPSA28 MPSA29
Characteristic
Symbol
Min
Typ
Max
10,000
10,000
0.7
0.8
1.2
1.5
Unit
DC Current Gain
hFE

VCE(sat)
Vdc

VBE(on)
1.4
2.0
Vdc
fT
125
200
MHz
Cobo
5.0
8.0
pF

Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
2. fT = hfe S ftest.
2646
MPSA28 MPSA29
200
1.8
VBE(S) @ IC/IB = 1.0 k
TA = 125C
V, VOLTAGE (VOLTS)
h FE , DC CURRENT GAIN (k)
VCE = 5.0 V
100
50
TA = 25C
20
TA = 55C
10
5.0
2.0
5.0
10
20
100
50
200
500
10
20
100
50
200
1k
500
2.4
qV, TEMPERATURE COEFFICIENT (mV/ C)
5.0
55C to 25C
2.0
3.0
25C to 125C
55C to 25C
4.0
qVB for VBE
TA = 25C
2.0
IC = 500 mA
1.6
1.2
IC = 100 mA
IC = 10 mA
IC = 250 mA
0.8
0.4
2.0
5.0
10
20
100
50
200
0.2
500
1.0 2.0
10
20
100 200
1 k 1.5 k
1k
10
500
1.0 ms
h fe , HIGH FREQUENCY CURRENT GAIN
2.0
qVC for VCE(S)
100 ms
1.0 s
200
TC = 25C
TA = 25C
100
10
1.0
VCE(S) @ IC/IB = 1.0 k
1.0
20
1.0
25C to 125C
50
1.2
0.6
1.0
1k
5.0
1.0
TA = 25C
1.4
0.8
2.0
1.0
1.0
1.6
CURRENT LIMIT
THERMAL LIMIT
MPSA28
MPSA29
2.0
5.0
10
20
5.0
VCE = 5.0 V
TA = 25C
f = 100 MHz
2.0
1.0
0.5
0.2
0.1
50
100
0.3 0.5
1.0
2.0
5.0
10
20
50
100

Area
200 300
2647
MOTOROLA
MPSA42*
MPSA43
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
MPSA42
MPSA43
Unit
VCEO
300
200
Vdc
VCBO
300
200
Vdc
VEBO
6.0
6.0
CASE 2904, STYLE 1

TO92 (TO226AA)
Vdc
IC
500
mAdc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
Watts
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit

Temperature Range
Characteristic
RqJA
200
C/mW
RqJC
83.3
C/mW

Characteristic
Symbol
Min
Max
300
200
300
200
6.0
0.1
0.1
0.1
0.1
Unit
OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0)
(IC = 100 mAdc, IE = 0)
V(BR)CEO
MPSA42
MPSA43
V(BR)CBO
MPSA42
MPSA43

(IE = 100 mAdc, IC = 0)
V(BR)EBO

(VCB = 200 Vdc, IE = 0)
(VCB = 160 Vdc, IE = 0)
MPSA42
MPSA43

(VEB = 6.0 Vdc, IC = 0)
(VEB = 4.0 Vdc, IC = 0)
MPSA42
MPSA43
Vdc
Vdc
Vdc
Adc
ICBO
Adc
IEBO
2648
MPSA42 MPSA43
Characteristic
Symbol
Min
Max
Unit
25
40
40
0.5
0.4
VBE(sat)
0.9
Vdc
fT
50
MHz
3.0
4.0
DC Current Gain
hFE
VCE(sat)
MPSA42
MPSA43

Vdc

(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
Ccb
MPSA42
MPSA43
pF
2649
MPSA42 MPSA43
200
VCE = 10 Vdc
TJ = +125C
100
25C
50
55C
30
20
1.0
2.0
3.0
5.0
7.0
10
20
30
50
100
70
100
C, CAPACITANCE (pF)
50
Ceb
20
10
5.0
Ccb
2.0
1.0
0.2
0.5
1.0 2.0
5.0 10
20
50
100
200
100
70
50
30
20
10
1.0
V, VOLTAGE (VOLTS)
3.0
5.0 7.0 10
20 30
50
70 100
500
TJ = 25C
1.2
1.0
0.8
0.6
0.4
0.2
2.0
3.0
5.0 7.0 10
20 30
2650
2.0
1.4
0
1.0
TJ = 25C
VCE = 20 V
f = 20 MHz
50
70 100
200
100
10 s
100 s
TA = 25C
1.0 ms
TC = 25C
50
100 ms
20
CURRENT LIMIT
THERMAL LIMIT
10
5.0
2.0
1.0
CURVES APPLY
BELOW RATED VCEO
0.5
0.5
1.0
2.0
5.0
10
20
MPSA43
MPSA42
50
100
200
500

Safe Operating Area
MOTOROLA
MPSA44
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
400
Vdc
VCBO
500
Vdc
VEBO
6.0
Vdc
IC
300
mAdc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
Watts
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit

Temperature Range
CASE 2904, STYLE 1

TO92 (TO226AA)
Characteristic
RqJA
200
C/W
RqJC
83.3
C/W

Characteristic
Symbol
Min
Max
Unit

(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
400
Vdc

(IC = 100 Adc, VBE = 0)
V(BR)CES
500
Vdc

(IC = 100 mAdc, IE = 0)
V(BR)CBO
500
Vdc

(IE = 10 mAdc, IC = 0)
V(BR)EBO
6.0
Vdc

(VCB = 400 Vdc, IE = 0)
ICBO
0.1
Adc

(VCE = 400 Vdc, VBE = 0)
ICES
500
nAdc

(VEB = 4.0 Vdc, IC = 0)
IEBO
0.1
Adc
OFF CHARACTERISTICS
2651
MPSA44
Characteristic
Symbol
Min
Max
40
50
45
40
200
0.4
0.5
0.75
Unit
DC Current Gain(1)
hFE

VCE(sat)

VBE(sat)
0.75
Vdc
Output Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
Cobo
7.0
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
130
pF
hfe
1.0
Vdc

2652
160
TA = 125C
140
120
VCE = 10 V
100
25C
80
60
40
55C
20
1.0
100
5.0
10
20
50
2.0
MPSA44
200 300
0.5
0.4
IC = 1.0 mA
IC = 10 mA
0.3
TA = 25C
0.2
0.1
0
10
30
100
10 k
50 k
1000
TA = 25C
1.0 ms
0.8
V, VOLTAGE (VOLTS)
300
1.0 k 3.0 k
1.0
0.6
0.4
0.2
300
200
30
3.0
10
1.0
0.3
100
10
CURRENT LIMIT
THERMAL LIMIT
2.0
MPSA44
20
50
10
100
5.0
200
500
10
Cib
50
20
Cob
5.0
TA = 25C
f = 1.0 MHz
2.0
1.0
0.3 0.5
1.0 s
100
10
100 s
20
1.0
1.0
300
TC = 25C
TA = 25C
100
2.0
0
0.1
C, CAPACITANCE (pF)
IC = 50 mA
1.0
3.0
10
30
100
300
3.0
VCE = 10 V
f = 10 MHz
TA = 25C
2.0
1.5
1.0
0.1
0.2 0.3
1.0
3.0
10
30
100
2653
MPSA44
10
Vin
+9.7 V
t, TIME ( s)
5.0
PW = 50 S
DUTY CYCLE = 2.0%
2.0
0
1.0
4.0 V
0.5
0.2
0.1
1.0
VCC = 150 V
IC/IB = 10
TA = 25C
VBE(off) = 4.0 Vdc
VCC
tr
RL
td
3.0
10
30
50
Vout
100
Vin
RB
CS 4.0 pF*
Figure 7. TurnOn Switching Times and Test Circuit
10
Vin
5.0
+10.7 V
t, TIME ( s)
ts
PW = 50 S
DUTY CYCLE = 2.0%
2.0
1.0
0.5
0.2
tf
VCC = 150 V
IC/IB = 10
TA = 25C
11.4 V
VCC
RL
0.1
1.0
3.0
10
30
50
100
Vout
Vin
RB
CS 4.0 pF*
Figure 8. TurnOff Switching Times and Test Circuit

* Total Shunt Capacitance or Test Jig and Connectors.
2654
MOTOROLA
MPSA62
MPSA63
MPSA64 *
PNP Silicon
COLLECTOR 3
MPSA55, MPSA56
BASE
2
For Specifications,
See MPSA05, MPSA06 Data
EMITTER 1
MAXIMUM RATINGS
Symbol
MPSA62
MPSA63
MPSA64
Unit
VCES
20
30
Vdc
VCBO
20
30
Vdc
VEBO
10
Vdc
IC
500
mAdc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
Watts
mW/C
TJ, Tstg
55 to +150
Characteristic
Symbol
Max
Unit
RqJA
200
C/W
RqJC
83.3
C/W
Rating

Temperature Range
1
2
CASE 2904, STYLE 1

TO92 (TO226AA)

Characteristic
Symbol
Min
Max
20
30
100
100
100
Unit
OFF CHARACTERISTICS
(IC = 100 Adc, VBE = 0)
(VCB= 15 Vdc, IE = 0)
(VCB = 30 Vdc, IE = 0)
V(BR)CES
MPSA62
MPSA63, MPSA64
Vdc
ICBO
MPSA62
MPSA63, MPSA64

(VEB = 10 Vdc, IC = 0)
IEBO
nAdc
nAdc
2655
MPSA62 MPSA63 MPSA64

Characteristic
Symbol
Min
Max
MPSA63
MPSA64
MPSA62
5,000
10,000
20,000
MPSA63
MPSA64
10,000
20,000
1.0
1.5
1.4
2.0
125
Unit
DC Current Gain
hFE

MPSA62
MPSA63, MPSA64

MPSA62
MPSA63, MPSA64
VCE(sat)
Vdc
VBE(on)
Vdc

2. fT = |hfe| S ftest.
2656
fT
MHz
MPSA63, MPSA64
MPSA62 MPSA63 MPSA64

200
TA = 125C
100
70
50
10 V
30
25C
VCE = 2.0 V
5.0 V
20
10
7.0
5.0
55C
3.0
2.0
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
300
2.0
TA = 25C
V, VOLTAGE (VOLTS)
1.6
1.2
0.8

IC/IB = 100
0.4
0
0.3 0.5
1.0
2 3 5
10 20 30 50
100 200 300
2.0
TA = 25C
1.8
1.6
1.4
IC = 10 mA 50 mA 100 mA 175 mA
1.2
1.0
0.8
0.6
0.10.2 0.5 1 2
1000
VCE = 5.0 V
f = 100 MHz
TA = 25C
5 10 20 50 100200500 1K2K 5K10K

10
4.0
3.0
2.0
300 mA
1.0
0.4
0.2
0.1
1.0 2.0
5.0
10
20
50
100 200
500
1K
100 s
1.0 ms
300
200
100
50
20
10
1.0
TA = 25C
1.0 s
TC = 25C
CURRENT LIMIT
THERMAL LIMIT
(DUTY CYCLE 10%) MPSA62
MPSA63
2.0
4.0 6.0
10
20
40 60
2657
MOTOROLA
MPSA70
PNP Silicon
COLLECTOR
3
2
BASE
1
EMITTER
1
2
CASE 2904, STYLE 1

TO92 (TO226AA)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
40
Vdc
VEBO
4.0
Vdc
IC
100
mAdc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
Watts
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit

Temperature Range
Characteristic
RqJA
200
C/W
RqJC
83.3
C/W

Symbol
Min
Max
Unit

(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
Vdc

(IE = 100 Adc, IC = 0)
V(BR)EBO
4.0
Vdc
ICBO
100
nAdc
Characteristic
OFF CHARACTERISTICS

(VCB = 30 Vdc, IE = 0)
2658
MPSA70
Characteristic
Symbol
Min
Max
Unit
DC Current Gain
hFE
40
400

VCE(sat)
0.25
Vdc
fT
125
MHz
Cobo
4.0
pF
ON CHARACTERISTICS

Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
2659
MPSA70
(VCE = 5.0 Vdc, TA = 25C)
10
7.0
IC = 10 A
5.0
1.0
7.0
5.0
BANDWIDTH = 1.0 Hz
RS 0
30 A
3.0
100 A
300 A
1.0 mA
2.0
BANDWIDTH = 1.0 Hz
RS
IC = 1.0 mA
3.0
2.0
300 A
1.0
0.7
0.5
100 A
30 A
0.3
0.2
1.0
10 A
0.1
10
20
50
100 200
500 1.0 k
f, FREQUENCY (Hz)
2.0 k
5.0 k
10
10 k
20
50
100 200
500 1.0 k 2.0 k
f, FREQUENCY (Hz)
5.0 k
10 k
1.0 M
500 k
BANDWIDTH = 1.0 Hz
(VCE = 5.0 Vdc, TA = 25C)
200 k
100 k
50 k
20 k
10 k
0.5 dB
5.0 k
1.0 dB
2.0 k
1.0 k
500
2.0 dB
3.0 dB
200
100
20
30
50 70 100
200 300
BANDWIDTH = 1.0 Hz
200 k
100 k
50 k
20 k
10 k
0.5 dB
5.0 k
1.0 dB
2.0 k
1.0 k
500
2.0 dB
3.0 dB
200
100
5.0 dB
10
1.0 M
500 k
500 700 1.0 k
5.0 dB
10
20
1.0 M
500 k
30
50 70 100
200 300
500 700 1.0 k
10 Hz to 15.7 kHz
200 k
100 k
50 k
20 k
10 k
NF
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
200
100
10
20
30
50 70 100
200 300
en2
4KTRS

5.0 k
2.0 k
1.0 k
500
+ 20 log10
500 700 1.0 k
Figure 5. Wideband
2660
MPSA70
400
TJ = 125C
25C
200
55C
100
80
MPSA70
VCE = 1.0 V
VCE = 10 V
60
40
0.003 0.005
0.01
0.02 0.03
0.05 0.07 0.1
0.2 0.3 0.5 0.7 1.0

2.0
3.0
5.0 7.0
10
20
30
50 70 100
100
1.0
TA = 25C
MPSA70
0.8
IC = 1.0 mA
0.6
10 mA
50 mA
100 mA
0.4
0.2
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
TA = 25C
PULSE WIDTH = 300 s
80 DUTY CYCLE 2.0%
300 A
200 A
150 A
40
100 A
50 A
20
0
5.0 10
20
5.0
10
15
20
25
30
35
TJ = 25C
V, VOLTAGE (VOLTS)
1.2
1.0
0.8
0.6
0.4
0.2
0
0.5 1.0
2.0
5.0
10
20
40
1.4
0.2
250 A
60
0.1
IB = 400 A
350 A
50
100
1.6
0.8
*qVC for VCE(sat)
25C to 125C
0
55C to 25C
0.8
25C to 125C
1.6
2.4
0.1
qVB for VBE

0.2
55C to 25C
0.5
1.0 2.0
5.0
10 20
50
100
2661
MPSA70
500
300
200
200
100
70
50
30
tr
20
10
7.0
5.0
1.0
100
70
50
tf
30
20
2.0
3.0
50 70
20 30
5.0 7.0 10
10
1.0
100
2.0 3.0 5.0 7.0 10

20 30
50 70 100
500
10
TJ = 25C
TJ = 25C
7.0
VCE = 20 V
300
Cib
C, CAPACITANCE (pF)
5.0 V
200
100
5.0
3.0
2.0
Cob
70
50
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
1.0
0.05
50
0.2
0.5
1.0
2.0
5.0
3.0
VCE = 10 Vdc
f = 1.0 kHz
TA = 25C
2.0
1.0
0.7
0.5
0.3
MPSA70
hfe 200
@ IC = 1.0 mA
7.0
5.0
0.2
0.1
10
20
50
200
10
100
70
50
30
20
VCE = 10 Vdc
f = 1.0 kHz
TA = 25C
MPSA70
hfe 200
@ IC = 1.0 mA
10
7.0
5.0
3.0
0.2
0.5
20
1.0 2.0
5.0
10
2662
0.1
20
VCC = 3.0 V
IC/IB = 10
IB1 = IB2
TJ = 25C
ts
300
t, TIME (ns)
t, TIME (ns)
1000
700
500
VCC = 3.0 V
IC/IB = 10
TJ = 25C
50
100
2.0
0.1
0.2
0.5
20
1.0 2.0
5.0
10
50
100

(NORMALIZED)
MPSA70
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
FIGURE 19
0.05
P(pk)
0.02
0.03
0.02
t1
0.01
0.01
0.01 0.02
SINGLE PULSE
0.05
0.1
0.2
0.5
1.0
t2
2.0
5.0
10
20
50
t, TIME (ms)
100 200

PULSE TRAIN SHOWN
ZJA(t) = r(t) RJA
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 k 100 k
400
200
100 s
100
TC = 25C
dc
60
1.0 s
TA = 25C
40
dc
20
TJ = 150C
10
CURRENT LIMIT
THERMAL LIMIT
6.0
4.0
10 s
1.0 ms
4.0
6.0 8.0 10
20
2.0

applicable curve.
40
104
VCC = 30 V
101

Example:
t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)
r(t) is 0.22.
102

T = r(t) x P(pk) x RJA = 0.22 x 2.0 x 200 = 88C.
103
ICEO
102
101
ICBO
AND
100
4
0
2
0
+ 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160

2663
MOTOROLA
MPSA75
MPSA77
PNP Silicon
COLLECTOR 3
BASE
2
EMITTER 1
MAXIMUM RATINGS
Rating
Symbol
MPSA75
MPSA77
Unit
VCES
40
60
Vdc
VEBO
10
IC
500
Adc

Derate above 25C
PD
625
5.0
mW
mW/C
TJ, Tstg
55 to +150
Characteristic
Symbol
Max
Unit
RqJA
200
C/W

Temperature Range
CASE 2904, STYLE 1

TO92 (TO226AA)
Vdc

Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
(IC = 100 Adc, VBE = 0)
MPSA75
MPSA77
V(BR)CES
40
60
Vdc

(IC = 100 mAdc, IE = 0)
MPSA75
MPSA77
V(BR)CBO
40
60
Vdc

(VCB= 30 V, IE = 0)
(VCB = 50 V, IE = 0)
MPSA75
MPSA77
100
100

(VCE = 30 V, VBE = 0)
(VCE = 50 V, VBE = 0)
MPSA75
MPSA77
500
500
100
10,000
10,000
VCE(sat)
1.5
Vdc
VBE
2.0
Vdc
|hfe|
1.25
2.4
ICBO
nAdc
ICES
Emitter Cutoff Current (VEB = 10 Vdc)
IEBO
nAdc
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
(IC = 100 mA, VCE = 5.0 V)
hFE
Collector Emitter Saturation Voltage (IC = 100 mA, IB = 0.1 mAdc)

Base Emitter On Voltage (IC = 100 mA, VCE = 5.0 Vdc)

Current Gain High Frequency (IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
2664
MPSA75 MPSA77
200
TA = 125C
100
70
50
10 V
30
25C
VCE = 2.0 V
5.0 V
20
10
7.0
5.0
55C
3.0
2.0
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
300
2.0
TA = 25C
V, VOLTAGE (VOLTS)
1.6
1.2
0.8

IC/IB = 100
0.4
0
0.3 0.5
1.0
2 3 5
10 20 30 50
100 200 300
2.0
TA = 25C
1.8
1.6
1.4
IC = 10 mA 50 mA 100 mA 175 mA
1.2
1.0
0.8
0.6
0.10.2 0.5 1 2
1000
VCE = 5.0 V
f = 100 MHz
TA = 25C
5 10 20 50 100200500 1K2K 5K10K

10
4.0
3.0
2.0
300 mA
1.0
0.4
0.2
0.1
1.0 2.0
5.0
10
20
50
100 200
500
1K
100 s
1.0 ms
300
200
100
50
20
10
1.0
TA = 25C
1.0 s
TC = 25C
CURRENT LIMIT
THERMAL LIMIT
(DUTY CYCLE 10%) MPSA75
MPSA77
2.0
4.0 6.0
10
20
40 60
2665
MOTOROLA
MPSA92*
MPSA93
PNP Silicon
COLLECTOR
3
2
BASE
1
EMITTER
1
MAXIMUM RATINGS
Rating
Symbol
MPSA92
MPSA93
Unit
VCEO
300
200
Vdc
VCBO
300
200
Vdc
VEBO
5.0
Vdc
IC
500
mAdc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
Watts
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit

Temperature Range
CASE 2904, STYLE 1

TO92 (TO226AA)
Characteristic
RqJA
200
C/W
RqJC
83.3
C/W

Characteristic
Symbol
Min
Max
300
200
300
200
5.0
0.25
0.25
0.1
Unit
OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0)
(IC = 100 mAdc, IE = 0)
V(BR)CEO
MPSA92
MPSA93
V(BR)CBO
MPSA92
MPSA93

(IE = 100 mAdc, IC = 0)
(VCB = 200 Vdc, IE = 0)
(VCB = 160 Vdc, IE = 0)
V(BR)EBO
Vdc
IEBO
Vdc
Adc
ICBO
MPSA92
MPSA93

(VEB = 3.0 Vdc, IC = 0)
Vdc
Adc
2666
MPSA92 MPSA93
Characteristic
Symbol
Min
Max
Unit
Both Types
Both Types
25
40
MPSA92
MPSA93
25
25
0.5
0.4
VBE(sat)
0.9
Vdc
fT
50
MHz
6.0
8.0
DC Current Gain
hFE
VCE(sat)
MPSA92
MPSA93

Vdc

(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
Ccb
MPSA92
MPSA93
pF
2667
MPSA92 MPSA93
150
TJ = +125C
VCE = 10 Vdc
100
+25C
70
55C
50
30
20
15
1.0
2.0
3.0
5.0
7.0
10
20
30
50
80
100
100
50
C, CAPACITANCE (pF)
Cib
20
10
5.0
2.0
Ccb
1.0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100200 500 1000
100
TJ = 25C
VCE = 20 Vdc
80
60
40
30
20
0
1.0
2.0
5.0
10
20
50
100
1.0
500
100 s
1.0 ms
V, VOLTAGE (VOLTS)
0.8
VBE @ VCE = 10 V
0.6
0.4
0.2
0
1.0
2.0
5.0
10
20
2668
50
100
1.0 s
200
100
MPSA93
50
20
1.5 WATT THERMAL

625 mW THERMAL
10
5.0
3.0
MPSA92

SECOND BREAKDOWN
100
200 300
5.0
10
20 30
50
MOTOROLA

VHF/UHF Transistors
MPSH10
NPN Silicon
MPSH11
COLLECTOR
3
1
BASE
2
EMITTER
1
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
25
Vdc
VCBO
30
Vdc
VEBO
3.0
Vdc

Derate above 25C
PD
350
2.8
mW
mW/C

Derate above 25C
PD
1.0
8.0
Watts
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit
RqJA
357
C/W
RqJC
125
C/W

Temperature Range
CASE 2904, STYLE 2

TO92 (TO226AA)
Characteristic

Characteristic
Symbol
Min
Max
Unit

(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
25
Vdc

(IC = 100 mAdc, IE = 0)
V(BR)CBO
30
Vdc

(IE = 10 mAdc, IC = 0)
V(BR)EBO
3.0
Vdc

(VCB = 25 Vdc, IE = 0)
ICBO
100
nAdc

(VEB = 2.0 Vdc, IC = 0)
IEBO
100
nAdc
OFF CHARACTERISTICS
2669
MPSH10 MPSH11
Characteristic
Symbol
Min
Max
Unit
hFE
60

VCE(sat)
0.5
Vdc

VBE(on)
0.95
Vdc
fT
650
MHz
Ccb
0.7
pF
0.35
0.6
0.65
0.9
9.0
ON CHARACTERISTICS
DC Current Gain

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
CommonBase Feedback Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
(IC = 4.0 mAdc, VCB = 10 Vdc, f = 31.8 MHz)
2670
Crb
MPSH10
MPSH11
rbCc
pF
ps
MOTOROLA
CATV Transistor
MPSH17
NPN Silicon
COLLECTOR
3
1
BASE
2
EMITTER
1
2
CASE 2904, STYLE 2

TO92 (TO226AA)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
15
Vdc
VCBO
20
Vdc
VEBO
3.0
Vdc
PD
350
2.81
mW
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit
RqJA
357
C/W

Derate above 25C
Temperature Range
Characteristic
(Printed Circuit Board Mounting)

Characteristic
Symbol
Min
Typ
Max
Unit

(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
15
Vdc

(IC = 100 mAdc, IE = 0)
V(BR)CBO
20
Vdc

(IE = 10 mAdc, IC = 0)
V(BR)EBO
3.0
Vdc
ICBO
100
nAdc
OFF CHARACTERISTICS

(VCB = 15 Vdc, IE = 0)
2671
MPSH17
Characteristic
Symbol
Min
Typ
Max
Unit
hFE
25
250
VCE(sat)
0.5
fT
800
MHz
(VCB = 10 Vdc, f = 1.0 MHz)
Ccb
0.3
0.9
pF

hfe
30
Noise Figure
(IC = 5.0 mAdc, VCC = 12 Vdc, RS = 50 ohms, f = 200 MHz)
NF
6.0
dB
Gpe
24
dB
ON CHARACTERISTICS
DC Current Gain

FUNCTIONAL TEST
Amplifier Power Gain
(IC = 5.0 mAdc, VCC = 12 Vdc, RS = 50 ohms, f = 200 MHz)
2672
MOTOROLA
RF Amplifier Transistor
MPSH81
PNP Silicon
COLLECTOR
3
1
BASE
2
EMITTER
1
2
CASE 2904, STYLE 2

TO92 (TO226AA)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
20
Vdc
VCBO
20
Vdc
VEBO
3.0
Vdc
PD
350
2.81
mW
mW/C
TJ, Tstg
55 to +150
Characteristic
Symbol
Max
Unit
RqJA
357
C/W

Derate above 25C
Temperature Range

Characteristic
Symbol
Min
Typ
Max
Unit

(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
20
Vdc

(IC = 10 mAdc, IE = 0)
V(BR)CBO
20
Vdc

(IE = 10 mAdc, IC = 0)
V(BR)EBO
3.0
Vdc

(VCB = 10 Vdc, IE = 0)
ICBO
100
nAdc

(VEB = 2.0 Vdc, IC = 0)
IEBO
100
nAdc
OFF CHARACTERISTICS
2673
MPSH81
Characteristic
Symbol
Min
Typ
Max
Unit
DC Current Gain
hFE
60

VCE(sat)
0.5
Vdc

VBE(on)
0.9
Vdc
fT
600
MHz
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Ccb
0.85
pF
CollectorEmitter Capacitance
(IB = 0, VCB = 10 Vdc, f = 1.0 MHz)
Cce
0.65
pF
ON CHARACTERISTICS

2674
MPSH81
TYPICAL COMMONBASE yPARAMETERS
(VCB = 10 Vdc, TA = 25C, Frequency Points in MHz)
30
40
0
100 MHz
450 MHz
930
MHz
1.0
IC = 4.0 mA
50
250
2.0
450
brb , (mmhos)
b ib , (mmhos)
250 MHz
60
100 MHz
8.0 mA
70
80
90
3.0
4.0
IC = 12 mA
8.0 mA
6.0
930
12 mA
100
110
20
120
7.0
8.0
0
20
40
60
80
100
120
140
2.4
2.1
1.8
1.5
1.2
0.9
0.6
0.3
gib, (mmhos)
grb, (mmhos)
Figure 1. Input Admittance
Figure 2. Reverse Transfer Admittance
12
250
12 mA
90
8.0 mA
80
450
70
60
930
IC = 4.0 mA
50
8.0 mA
930
10
bob , (mmhos)
100
14
100 MHz
110
bfb , (mmhos)
4.0 mA
5.0
IC = 4.0 mA
8.0
12 mA
6.0
4.0
450
250
100 MHz
2.0
40
0
30
20
120 100
80
60
20
40
20
2.0
40
0.5
1.0
0.5
1.5
2.0
2.5
gob, (mmhos)
Figure 3. Forward Transfer Admittance
gfb, (mmhos)
3.0
3.5
1000
900
800
700
600
500
400
300
VCE = 10 V
f = 100 MHz
200
100
0
0
2.0
4.0 6.0 8.0
10
12
14
16
18
20
2675
MOTOROLA
MPSL01
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
1
2
CASE 2904, STYLE 1

TO92 (TO226AA)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
120
Vdc
VCBO
140
Vdc
VEBO
5.0
Vdc
IC
150
mAdc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
Watts
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit

Temperature Range
Characteristic
RqJA
200
C/W
RqJC
83.3
C/W

Characteristic
Symbol
Min
Max
Unit

(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
120
Vdc

(IC = 100 Adc, IE = 0 )
V(BR)CBO
140
Vdc

(IE = 10 Adc, IC = 0)
V(BR)EBO
5.0
Vdc

(VCB = 75 Vdc, IE = 0)
ICBO
1.0
Adc

(VEB = 4.0 Vdc, IC = 0)
IEBO
100
nAdc
OFF CHARACTERISTICS
2676
MPSL01
Characteristic
Symbol
Min
Max
Unit
hFE
50
300
0.20
0.30
1.2
1.4
fT
60
MHz
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Ccb
8.0
pF

hfe
30
ON CHARACTERISTICS
DC Current Gain(1)
VCE(sat)

(IC = 50 mAdc, IB = 5.0 mAdc)(1)
VBE(sat)
Vdc
Vdc

2677
MPSL01
500
300
200
VCE = 1.0 V
VCE = 5.0 V
TJ = 125C
25C
100
55C
50
30
20
10
7.0
5.0
0.1
0.2
0.3
0.5
0.7
1.0
3.0
2.0
5.0
7.0
10
20
30
50
70
100
1.0
0.9
0.8
0.7
0.6
IC = 1.0 mA
10 mA
100 mA
30 mA
0.5
0.4
0.3
0.2
0.1
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
101
VCE = 30 V
100
101
TJ = 125C
102
75C
103
REVERSE
FORWARD
25C
104
105
0.4
IC = ICES
0.3
0.1
0.2
0
0.1
0.2
0.3
0.4
0.5
0.6
2678
MPSL01
1.0
2.5
TJ = 25C
V, VOLTAGE (VOLTS)
0.8
0.6
0.4
0.2
0
0.1
1.0 2.0 3.0 5.0 10 20 30

0.2 0.3 0.5
50
2.0
1.0
qVC for VCE(sat)
0.5
0
0.5
1.0
qVB for VBE(sat)
1.5
2.0
2.5
0.1
100
TJ = 55C to +135C
1.5
0.2 0.3 0.5 1.0 2.0 3.0 5.0

10 20 30
tr, tf 10 ns
DUTY CYCLE = 1.0%
3.0 k
RC
RB
Vout
5.1 k
Vin
100
C, CAPACITANCE (pF)
100
0.25 F
10 s
INPUT PULSE
TJ = 25C
30
VCC
30 V
VBB
8.8 V
Vin
1N914
20
10
Cibo
7.0
5.0
Cobo
3.0
2.0
1.0
0.2
0.3
2.0
3.0
5.0 7.0
10
20
5000
1000
IC/IB = 10
TJ = 25C
500
2000
tf @ VCC = 30 V
t, TIME (ns)
100
30
VCC = 120 V
500
300
ts @ VCC = 120 V
200
20
10
0.2 0.3 0.5
IC/IB = 10
TJ = 25C
1000
tr @ VCC = 30 V
50
tf @ VCC = 120 V
3000
tr @ VCC = 120 V
300
t, TIME (ns)
0.5 0.7 1.0
200
100
100
70
50
10.2 V
50
100
1.0
20 30
2.0 3.0 5.0 10
50
100
200
50
0.2 0.3 0.5
20 30 50
1.0 2.0 3.0 5.0
10
100
200
2679
MOTOROLA
MPSL51
PNP Silicon
COLLECTOR
3
2
BASE
1
EMITTER
1
2
CASE 2904, STYLE 1

TO92 (TO226AA)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
100
Vdc
VCBO
100
Vdc
VEBO
4.0
Vdc
IC
600
mAdc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
Watts
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit

Temperature Range
Characteristic
RqJA
200
C/W
RqJC
83.3
C/W

Symbol
Min
Max
Unit

(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
100
Vdc

(IC = 100 mAdc, IE = 0)
V(BR)CBO
100
Vdc

(IE = 10 mAdc, IC = 0)
V(BR)EBO
4.0
Vdc

(VCB = 50 Vdc, IE = 0)
ICBO
1.0
Adc

(VEB = 3.0 Vdc, IC = 0)
IEBO
100
nAdc
Characteristic
OFF CHARACTERISTICS
2680
MPSL51
Characteristic
Symbol
Min
Max
Unit
DC Current Gain(1)
hFE
40
250

VCE(sat)
0.25
0.30

VBE(sat)
1.2
1.2
fT
60
MHz
Cobo
8.0
pF
hfe
20
Vdc
Vdc

Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
2681
MPSL51
200
150
h FE, CURRENT GAIN
TJ = 125C
100
25C
70
50
55C
VCE = 1.0 V
VCE = 5.0 V
30
20
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
20
30
50
100
10
20
50
1.0
0.9
0.8
0.7
0.6
IC = 1.0 mA
0.5
10 mA
30 mA
100 mA
0.4
0.3
0.2
0.1
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
103
102
VCE = 30 V
IC = ICES
101
TJ = 125C
100
75C
101
102
REVERSE
25C
103
0.3
0.2
FORWARD
0.1
0
0.1
0.2 0.3 0.4 0.5
0.6
0.7
2682
MPSL51
1.0
TJ = 25C
0.9
V, VOLTAGE (VOLTS)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.1
0.2 0.3 0.5
1.0 2.0 3.0 5.0

10
20 30
50
2.5
1.5
1.0
0.5
VC for VCE(sat)
0
0.5
1.0
1.5
VB for VBE(sat)
2.0
2.5
0.1
100
TJ = 55C to 135C
2.0
0.2 0.3 0.5 1.0 2.0 3.0 5.0

10
20 30
10.2 V
10 s
INPUT PULSE
tr, tf 10 ns
DUTY CYCLE = 1.0%
0.25 F
3.0 k
RC
Vout
RB
5.1 k
Vin
100
C, CAPACITANCE (pF)
100
70
50
VCC
30 V
100
TJ = 25C
30
Cibo
20
10
7.0
5.0
Cobo
3.0
1N914
2.0
1.0
0.2
0.3
2.0 3.0
5.0 7.0
0.5 0.7 1.0
1000
700
500
10
20
2000
IC/IB = 10
TJ = 25C
tr @ VCC = 120 V
300
1000
700
500
tr @ VCC = 30 V
200
t, TIME (ns)
t, TIME (ns)
100
VBB
+ 8.8 V
Vin
50
100
70
50
10
0.2 0.3 0.5
VCC = 120 V
1.0
2.0 3.0 5.0
10
20 30
50
tf @ VCC = 120 V
tf @ VCC = 30 V
200
ts @ VCC = 120 V
100
70
50
30
20
300
IC/IB = 10
TJ = 25C
30
100
200
20
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
20 30
50
100
200
2683
MOTOROLA
One Watt High Current Transistors
MPSW01
MPSW01A*
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol

MPSW01
MPSW01A
VCEO
VCBO
Unit
CASE 2905, STYLE 1

TO92 (TO226AE)
Vdc
40
50
VEBO
5.0
Vdc
IC
1000
mAdc

Derate above 25C
PD
1.0
8.0
Watts
mW/C

Derate above 25C
PD
2.5
20
Watts
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit
RqJA
125
C/W
RqJC
50
C/W

Temperature Range
Vdc
30
40
MPSW01
MPSW01A
Value
Characteristic

Characteristic
Symbol
Min
Max
30
40
40
50
5.0
0.1
0.1
0.1
Unit
OFF CHARACTERISTICS
(IC = 10 mAdc, IB = 0)
(IC = 100 Adc, IE = 0)
V(BR)CEO
MPSW01
MPSW01A
V(BR)CBO
MPSW01
MPSW01A

(IE = 100 mAdc, IC = 0)
(VCB = 30 Vdc, IE = 0)
(VCB = 40 Vdc, IE = 0)
V(BR)EBO
Vdc
IEBO
Vdc
Adc
ICBO
MPSW01
MPSW01A

(VEB = 3.0 Vdc, IC = 0)
Vdc
Adc
2684
MPSW01 MPSW01A
Characteristic
Symbol
Min
Max
55
60
50
Unit
DC Current Gain
(IC = 1000 mAdc, VCE = 1.0 Vdc)
hFE

(IC = 1000 mAdc, IB = 100 mAdc)
VCE(sat)
0.5
Vdc
(IC = 1000 mAdc, VCE = 1.0 Vdc)
VBE(on)
1.2
Vdc
fT
50
MHz
Cobo
20
pF

Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

1.0
300
h FE , CURRENT GAIN
200
100
70
VCE = 1.0 V
TJ = 25C
50
V, VOLTAGE (VOLTS)
20
50
100
200
0.6
IC =
1000 mA
0.4
IC =
10 mA
0.2
IC =
IC = 500 mA
IC =
250 mA
100 mA
IC =
50 mA
0.5 1.0 2.0
5.0
10 20
0.4
0
1.0 2.0
0.01 0.02 0.05 0.1 0.2
0.2
1000
TJ = 25C
0.6
500
5.0 10 20
qVB , TEMPERATURE COEFFICIENT (mV/C)
10
0.8
0.8
30
1.0
TJ = 25C
50 100 200 500 1000
0.8
1.2
1.6
qVB FOR VBE

2.0
2.4
2.8
1.0 2.0
5.0 10 20
50 100 200 500 1000
50 100
2685
80
300
TJ = 25C
200
C, CAPACITANCE (pF)
MPSW01 MPSW01A
100
70
VCE = 10 V
TJ = 25C
f = 20 MHz
50
60
40
Cibo
20
Cobo
30
10
20
100
50
200
Cobo
Cibo
1000
5.0
1.0
10
2.0
15
3.0
20
4.0
25
5.0
1k
1.0 ms 100 ms
1.0 s
500
200
TA = 25C
100
DUTY CYCLE 10%

CURRENT LIMIT
THERMAL LIMIT
50
20
10
1.0
TC = 25C
MPSW01
MPSW01A
2.0
5.0
10
20
30 40

Area
2686
MOTOROLA
MPSW05
MPSW06*
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
1
2
MAXIMUM RATINGS
Rating
Symbol
MPSW05
MPSW06
Unit
VCEO
60
80
Vdc
VCBO
60
80
Vdc
VEBO
4.0
Vdc
IC
500
mAdc

Derate above 25C
PD
1.0
8.0
Watt
mW/C

Derate above 25C
PD
2.5
20
Watts
mW/C
TJ, Tstg
55 to +150

Temperature Range
CASE 2905, STYLE 1

TO92 (TO226AE)
Characteristic
Symbol
Max
Unit
RqJA
125
C/W
RqJC
50
C/W

Characteristic
Symbol
Min
Max
60
80
4.0
0.5
0.5
0.1
0.1
0.1
Unit
OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
MPSW05
MPSW06

(IE = 100 mAdc, IC = 0)
V(BR)EBO

(VCE = 40 Vdc, IB = 0)
(VCE = 60 Vdc, IB = 0)
MPSW05
MPSW06

(VCB = 40 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0)
MPSW05
MPSW06
Adc
ICBO
IEBO
Vdc
Adc
ICES

(VEB = 3.0 Vdc, IC = 0)
Vdc
Adc
2687
MPSW05 MPSW06
Characteristic
Symbol
Min
Max
80
60
Unit
DC Current Gain
hFE

VCE(sat)
0.4
Vdc

VBE(sat)
1.2
Vdc
fT
50
MHz
Cobo
12
pF

Output Capacitance
(VCB = 10 V, f = 1.0 MHz)
400
TJ = 125C
VCE = 1.0 V
200
25C
55C
100
80
60
40
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
300
500
1.0
1.0
TJ = 25C
TJ = 25C
0.8
0.6
0.8
IC = 10 mA
50
mA
100 mA
250 mA
V, VOLTAGE (VOLTS)
500 mA
0.4
0.2
0.6
0.4
0.2
0
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
2688
50
0
0.5
1.0
2.0
20
5.0
10
50
100
200
500
80
0.8
TJ = 25C
60
1.2
40
C, CAPACITANCE (pF)
MPSW05 MPSW06
1.6
VB for VBE
2.0
2.4
Cibo
20
10
8.0
6.0
2.8
0.5
1.0
2.0
5.0
20
50
10
100
200
Cobo
4.0
0.1
500
0.2
0.5 1.0 2.0

5.0 10
20
100
300
200
VCE = 2.0 V
TJ = 25C
50
100
70
50
DUTY CYCLE 10%

2k
1.0 ms
1k
100 s
500
TA = 25C
200
100
50
20
30
2.0
3.0
5.0 7.0 10
20 30
50 70 100
200
10
1.0
TC = 25C
1.0 s
dc
dc
CURRENT LIMIT
THERMAL LIMIT
MPSW05
MPSW06
10
20
60 80 100
2.0
5.0
2689
MOTOROLA
One Watt High Voltage Transistor
MPSW10
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
1
CASE 2905, STYLE 1

TO92 (TO226AE)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
300
Vdc
VCBO
300
Vdc
VEBO
6.0
Vdc
IC
500
mAdc

Derate above 25C
PD
1.0
8.0
Watt
mW/C

Derate above 25C
PD
2.5
20
Watts
mW/C
TJ, Tstg
55 to +150

Temperature Range
Symbol
Max
Unit
Characteristic
RqJA
125
C/W
RqJC
50
C/W

Characteristic
Symbol
Min
Max
Unit

(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
300
Vdc

(IC = 100 Adc, IE = 0)
V(BR)CBO
300
Vdc

(IE = 100 Adc, IC = 0)
V(BR)EBO
6.0
Vdc

(VCB = 200 Vdc, IE = 0)
ICBO
0.2
Adc

(VEB = 6.0 Vdc, IC = 0)
IEBO
0.1
Adc
OFF CHARACTERISTICS
2690
MPSW10
Characteristic
Symbol
Min
Max
25
40
40
Unit
DC Current Gain
hFE

VCE(sat)
0.75
Vdc
VBE(on)
0.85
Vdc
fT
45
MHz
Ccb
3.0
pF
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)

200
VCE = 10 V
TJ = 125C
100
25C
70
55C
50
30
20
1.0
2.0
3.0
5.0 7.0 10
20 30
50
70 100
0.6
0.5
0.4
IC = 30 mA
0.3
0.1
0
0.1
V, VOLTAGE (VOLTS)
1.0
0.4
5.0
0.2
0
1.0
2.0
3.0
5.0 7.0 10
20 30
50
TJ = 25C
0.6
IC = 10 mA
0.2
0.5
2.0
5.0
1.0
10
20 30
1.4
0.8
IC = 20 mA
0.2
1.2
TJ = 25C
70 100
2.5
2.0
IC
IB
1.5
+ 10
25C to 125C
1.0
0.5
RVC for VCE(sat)
0
55C to 25C
0.5
1.0
1.5
55C to 125C
RVB for VBE
2.0
2.5
1.0
2.0
3.0
5.0 7.0 10
20 30
50
70
100
2691
C, CAPACITANCE (pF)
100
70
50
MPSW10
TJ = 25C
Ceb
30
20
10
7.0
5.0
Ccb
3.0
2.0
1.0
0.2
0.5
1.0 2.0
5.0
10 20
50
100
200
100
70
50
TJ = 25C
VCE = 20 V
f = 20 MHz
30
20
10
1.0
2.0 3.0
5.0 7.0 10
20 30
50
70 100
1k
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN
LIMIT
500
1.0 ms
200
1.0 s
100 s
100
50
TA = 25C
20
DUTY CYCLE 10%
10
10
20
50
100
200 300
2692
MOTOROLA
MPSW13
MPSW14
NPN Silicon
COLLECTOR 3
BASE
2
EMITTER 1
1
CASE 2905, STYLE 1

TO92 (TO226AE)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCES
30
Vdc
VCBO
30
Vdc
VEBO
10
Vdc
IC
1.0
Adc

Derate above 25C
PD
1.0
8.0
Watts
mW/C

Derate above 25C
PD
2.5
20
Watts
mW/C
TJ, Tstg
55 to +150

Temperature Range
Symbol
Max
Unit
Characteristic
RqJA
125
C/W
RqJC
50
C/W

Symbol
Min
Max
Unit
V(BR)CES
30
Vdc

(VCB = 30 Vdc, IE = 0)
ICBO
100
nAdc

(VEB = 10 Vdc, IC = 0)
IEBO
100
nAdc
Characteristic
OFF CHARACTERISTICS
(IC = 100 Adc, VBE = 0)
REV 1
2693
MPSW13 MPSW14
Characteristic
Symbol
Min
Max
MPSW13
MPSW14
5,000
10,000
MPSW13
MPSW14
10,000
20,000
Unit
DC Current Gain
hFE

VCE(sat)
1.5
Vdc
VBE(on)
2.0
Vdc
fT
125
MHz

CURRENT LIMIT
DUTY CYCLE 10%
THERMAL LIMIT
3.0 k
2.0 k
100 ms
1.0 ms
1.0 k
1.0 s
500
TA = 25C
200
1.5
TC = 25C
2.0
5.0
10
20
30

Area
200 k
TJ = 125C
100 k
70 k
50 k
25C
30 k
20 k
10 k
7.0 k
5.0 k
55C
3.0 k
2.0 k
5.0 7.0 10
VCE = 5.0 V
20
30
50 70 100
2694
200 300
500
3.0
TJ = 25C
IC =
10 mA
2.5
IC =
50 mA
IC =
500 mA
IC =
250 mA
2.0
1.5
1.0
0.5
0.1
0.2
0.5 1.0 2.0
5.0
10
20
50
100 200
500 1000
MPSW13 MPSW14
1.6
TJ = 25C
V, VOLTAGE (VOLTS)
1.4
1.2
1.0
0.8
0.6

5.0 7.0 10
20
30
50
70 100
200 300
1.0
2.0
55C TO 25C
3.0
25C TO 125C
4.0
qVB FOR VBE

5.0
55C TO 25C
6.0
500
5.0 7.0 10
20
70 100
200 300
500
20
VCE = 5.0 V
TJ = 25C
f = 100 MHz
TJ = 25C
C, CAPACITANCE (pF)
h FE , SMALLSIGNAL CURRENT GAIN
50
4.0
1.0
0.8
0.6
0.4
0.2
0.5
30
2.0
25C TO 125C
*qVC FOR VCE(sat)
10
7.0
Cibo
5.0
Cobo
3.0
2.0
1.0
2.0
5.0
10
20
50
100
200
500
0.04
0.1
0.2
0.4
1.0
2.0
4.0
10
20
40
2695
MOTOROLA
MPSW42
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
CASE 2905, STYLE 1

TO92 (TO226AE)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
300
Vdc
VCBO
300
Vdc
VEBO
6.0
Vdc
IC
500
mAdc

Derate above 25C
PD
1.0
8.0
Watt
mW/C

Derate above 25C
PD
2.5
20
Watts
mW/C
TJ, Tstg
55 to +150

Temperature Range
Symbol
Max
Unit
Characteristic
RqJA
125
C/W
RqJC
50
C/W

Characteristic
Symbol
Min
Max
Unit

(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
300
Vdc

(IC = 100 Adc, IE = 0)
V(BR)CBO
300
Vdc

(IE = 100 Adc, IC = 0)
V(BR)EBO
6.0
Vdc

(VCB = 200 Vdc, IE = 0)
ICBO
0.1
Adc

(VEB = 6.0 Vdc, IC = 0)
IEBO
0.1
Adc
OFF CHARACTERISTICS
2696
MPSW42
Characteristic
Symbol
Min
Max
25
40
40
Unit
ON CHARACTERISTICS
DC Current Gain
hFE

VCE(sat)
0.5
Vdc

VBE(sat)
0.9
Vdc
fT
50
MHz
Ccb
3.0
pF
Collector Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
200
VCE = 10 V
TJ = 125C
100
25C
70
55C
50
30
20
1.0
2.0
3.0
5.0 7.0 10
20 30
50
70 100
0.6
0.5
0.4
IC = 30 mA
0.3
0.1
0
0.1
V, VOLTAGE (VOLTS)
1.0
0.4
5.0
0.2
0
1.0
2.0
3.0
20 30
5.0 7.0 10
50
TJ = 25C
0.6
IC = 10 mA
0.2
0.5
1.0
10
2.0
5.0
20 30
1.4
0.8
IC = 20 mA
0.2
1.2
TJ = 25C
70 100
2.5
2.0
IC
IB
1.5
+ 10
25C to 125C
1.0
0.5
RVC for VCE(sat)
0
55C to 25C
0.5
1.0
1.5
55C to 125C
RVB for VBE
2.0
2.5
1.0
2.0
3.0
5.0 7.0 10
20 30
50
70
100
2697
C, CAPACITANCE (pF)
100
70
50
MPSW42
TJ = 25C
Ceb
30
20
10
7.0
5.0
Ccb
3.0
2.0
1.0
0.2
0.5
1.0 2.0
5.0
10 20
50
100
200
100
70
50
TJ = 25C
VCE = 20 V
f = 20 MHz
30
20
10
1.0
2.0 3.0
5.0 7.0 10
20 30
50
70 100
1k
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN
LIMIT
500
1.0 ms
200
1.0 s
100 s
100
50
TA = 25C
20
DUTY CYCLE 10%
10
10
20
50
100
200 300
2698
MOTOROLA

NPN Silicon
MPSW45
MPSW45A*
COLLECTOR 3
BASE
2
EMITTER 1
MAXIMUM RATINGS
Rating
Symbol
MPSW45
MPSW45A
Unit
VCES
40
50
Vdc
VCBO
50
60
Vdc
VEBO
12
12
Vdc
IC
1.0
1.0
Adc

Derate above 25C
PD
1.0
8.0
Watts
mW/C

Derate above 25C
PD
2.5
20
Watts
mW/C
TJ, Tstg
55 to +150

Temperature Range
CASE 2905, STYLE 1

TO92 (TO226AE)
Characteristic
Symbol
Max
Unit
RqJA
125
C/W
RqJC
50
C/W

Symbol
Characteristic
Min
Max
40
50
50
60
12
100
100
100
Unit
OFF CHARACTERISTICS
(IC = 100 Adc, VBE = 0)
(IC = 100 mAdc, IE = 0)
V(BR)CES
MPSW45
MPSW45A
V(BR)CBO
MPSW45
MPSW45A

(IE = 10 mAdc, IC = 0)
(VCB = 30 Vdc, IE = 0)
(VCB = 40 Vdc, IE = 0)
Vdc
V(BR)EBO
Vdc
ICBO
MPSW45
MPSW45A

(VEB = 10 Vdc, IC = 0)
IEBO
Vdc
nAdc
nAdc
2699
MPSW45 MPSW45A
Characteristic
Symbol
Min
Max
25,000
15,000
4,000
150,000
Unit
DC Current Gain
(IC = 1.0 Adc, VCE = 5.0 Vdc)
hFE

(IC = 1.0 Adc, IB = 2.0 mAdc)
VCE(sat)
1.5
Vdc

(IC = 1.0 Adc, IB = 2.0 mAdc)
VBE(sat)
2.0
Vdc

(IC = 1.0 Adc, VCE = 5.0 Vdc)
VBE(on)
2.0
Vdc
fT
100
MHz
Ccb
6.0
pF

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
RS
in
en
IDEAL
TRANSISTOR
2700
MPSW45 MPSW45A
(VCE = 5.0 Vdc, TA = 25C)
500
2.0
BANDWIDTH = 1.0 Hz
RS 0
200
BANDWIDTH = 1.0 Hz
100
10 A
50
100 A
20
IC = 1.0 mA
10
1.0
0.7
0.5
IC = 1.0 mA
0.3
0.2
100 A
0.1
0.07
0.05
10 A
0.03
0.02
10 20
5.0
10 20
50 100 200
500 1 k 2 k 5 k 10 k 20 k
f, FREQUENCY (Hz)
50 k 100 k
50 100 200
50 k 100 k
14
200

12
100
500 1 k 2 k 5 k 10 k 20 k
f, FREQUENCY (Hz)
IC = 10 A
70
50
100 A
30
20
1.0 mA
10
1.0
2.0
10
10 A
8.0
100 A
6.0
4.0
IC = 1.0 mA
2.0
5.0
10
20
50 100 200
500
100
0
0
1.0
2.0
5.0
10
20
50 100 200
500
100
0
2701
MPSW45 MPSW45A
20
4.0
TJ = 25C
C, CAPACITANCE (pF)
10
7.0
Cibo
Cobo
5.0
3.0
2.0
0.04
0.1
0.2
0.4
1.0 2.0 4.0
10
20
2.0
1.0
0.8
0.6
0.4
0.2
0.5
40
200 k
TJ = 125C
25C
30 k
20 k
10 k
7.0 k
5.0 k
55C
VCE = 5.0 V
3.0 k
2.0 k
5.0 7.0
10
20 30
50 70 100
200 300
500
TJ = 25C
V, VOLTAGE (VOLTS)
1.4
1.2
1.0
0.8
0.6
20 30
50 70 100 200 300
2702
0.5 10 20
50
100 200
500
TJ = 25C
2.5
IC = 10 mA
50 mA
250 mA
500 mA
2.0
1.5
1.0
0.5
0.1 0.2
0.5 1.0 2.0 5.0 10 20 50 100 200

500 1000
1.6
10
2.0
3.0
5.0 7.0
1.0
100 k
70 k
50 k
VCE = 5.0 V
f = 100 MHz
TJ = 25C
500
1.0
2.0
25C TO 125C
*RqVC FOR VCE(sat)

55C TO 25C
3.0
25C TO 125C
4.0
qVB FOR VBE

5.0
55C TO 25C
6.0
5.0 7.0 10
20 30
50 70 100
200 300
500
MPSW45 MPSW45A

1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
0.05
SINGLE PULSE
0.1
0.07
0.05
SINGLE PULSE
0.03
0.02
0.01
0.1
0.2
0.5
1.0
2.0
10
5.0
20
50
t, TIME (ms)
100
200
500
1.0 k
2.0 k
5.0 k
10 k
1.0 k
700
500
300
200
FIGURE A
1.0 ms
tP
TA = 25C
TC = 25C
100 s
PP
1.0 s
100
70
50
PP
t1
30
CURRENT LIMIT
THERMAL LIMIT
20
10
0.4 0.6
1/f
DUTY CYCLE
1.0
2.0
4.0 6.0
10
20
40
+ t1 f + ttP1
2703
MOTOROLA
One Watt High Current Transistors

PNP Silicon
MPSW51
MPSW51A*
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
MPSW51
MPSW51A
VCEO
30
40
Vdc
MPSW51
MPSW51A
VCBO
40
50
Vdc
VEBO
5.0
Vdc
IC
1000
mAdc

Derate above 25C
PD
1.0
8.0
Watts
mW/C

Derate above 25C
PD
2.5
20
Watts
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit
RqJA
125
C/W
RqJC
50
C/W


Temperature Range
1
2
CASE 2905, STYLE 1

TO92 (TO226AE)
Characteristic

Characteristic
Symbol
Min
Max
30
40
40
50
5.0
0.1
0.1
0.1
Unit
OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0)
(IC = 100 mAdc, IE = 0)
V(BR)CEO
MPSW51
MPSW51A
V(BR)CBO
MPSW51
MPSW51A

(IE = 100 mAdc, IC = 0)
(VCB = 30 Vdc, IE = 0)
(VCB = 40 Vdc, IE = 0)
V(BR)EBO
Vdc
IEBO
Vdc
Adc
ICBO
MPSW51
MPSW51A

(VEB = 3.0 Vdc, IC = 0)
Vdc
Adc
2704
MPSW51 MPSW51A
Characteristic
Symbol
Min
Max
55
60
50
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 1000 mAdc, VCE = 1.0 Vdc)
hFE

(IC = 1000 mAdc, IB = 100 mAdc)
VCE(sat)
0.7
Vdc

(IC = 1000 mAdc, VCE = 1.0 Vdc)
VBE(on)
1.2
Vdc
fT
50
MHz
Cobo
30
pF

Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
1.0
h FE , CURRENT GAIN
200
100
70
VCE = 1.0 V
TJ = 25C
50
20
10
20
50
100
200
500
1000
0.4
0.2
50 100
qV B, TEMPERATURE COEFFICIENT (mV/ C)
V, VOLTAGE (VOLTS)
0.6
0
1.0 2.0
IC = IC =
IC =
IC =
100 250 500 mA 1000 mA
mA mA
0.4
0.2
IC =
50 mA
TJ = 25C
0.6
IC =
10 mA
TJ = 25C
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
1.0
0.8
0.8
5.0
10
20
50 100 200
500 1000
0.8
1.2
1.6
qVB for VBE

2.0
2.4
2.8
1.0 2.0
5.0
10
20
50 100 200
500 1000
2705
300
160
TJ = 25C
200
C, CAPACITANCE (pF)
MPSW51 MPSW51A
VCE = 10 V
TJ = 25C
f = 20 MHz
100
70
50
120
80
Cibo
40
Cobo
30
10
0
20
50
100
200
500
1000
Cobo
Cibo
5.0
1.0
10
15
20
2.0
3.0
4.0
1.0 k
1.0 ms
500
1.0 ms
100 ms
TA = 25C
TC = 25C
200
100
25
5.0
DUTY CYCLE 10%

MPSW51
MPSW51A
50
CURRENT LIMIT
THERMAL LIMIT
20
10
1.0
2.0
5.0
10
20 30 40

Area
2706
MOTOROLA
MPSW55
MPSW56*
PNP Silicon
COLLECTOR
3
2
BASE
1
EMITTER
1
MAXIMUM RATINGS
Rating
Symbol
MPSW55
MPSW56
Unit
VCEO
60
80
Vdc
VCBO
60
80
Vdc
VEBO
4.0
Vdc
IC
500
mAdc

Derate above 25C
PD
1.0
8.0
Watt
mW/C

Derate above 25C
PD
2.5
20
Watts
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit
RqJA
125
C/W
RqJC
50
C/W

Temperature Range
CASE 2905, STYLE 1

TO92 (TO226AE)
Characteristic

Characteristic
Symbol
Min
Max
60
80
4.0
0.5
0.5
0.1
0.1
0.1
Unit
OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
MPSW55
MPSW56

(IE = 100 mAdc, IC = 0)
V(BR)EBO

(VCE = 40 Vdc, IB = 0)
(VCE = 60 Vdc, IB = 0)
MPSW55
MPSW56

(VCB = 40 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0)
MPSW55
MPSW56
Adc
ICBO
IEBO
Vdc
Adc
ICES

(VEB = 3.0 Vdc, IC = 0)
Vdc
Adc
2707
MPSW55 MPSW56
Characteristic
Symbol
Min
Max
100
50
Unit
DC Current Gain
hFE

VCE(sat)
0.5
Vdc
VBE(on)
1.2
Vdc
fT
50
MHz
Cobo
15
pF

Output Capacitance
(VCB = 10 Vdc, f = 1.0 MHz)
400
TJ = 125C
VCE = 1.0 V
200
25C
55C
100
80
60
40
0.5 0.7
1.0
2.0
3.0
5.0
7.0 10
20
30
50
70
100
200
300
500
1.0
1.0
TJ = 25C
TJ = 25C
0.8
0.8
0.6
IC = 10 mA
50
mA
100 mA
250 mA
V, VOLTAGE (VOLTS)
500 mA
0.4
0.2
0.6
0.4
0.2
0
0.05 0.1
0.2
0.5 1.0 2.0

5.0
10
20
2708
50
0
0.5 1.0
2.0
5.0 10 20
50 100 200
500
100
0.8
70
1.2
1.6
VB for VBE
2.0
30
20
10
2.4
Cobo
7.0
2.8
0.5
1.0
2.0
5.0 10 20
50 100 200
5.0
0.1
500
0.2
0.5 1.0 2.0

5.0 10 20
50 100
200
VCE = 2.0 V
TJ = 25C
TJ = 25C
Cibo
50
C, CAPACITANCE (pF)
MPSW55 MPSW56
100
70
50
30
DUTY CYCLE 10%

2 k
5.0 7.0 10
20 30 50 70 100
200
100 s
500
200
100
50
20
20
2.0 3.0
1.0 ms
1 k
10
1.0
1.0 s
TA = 25C
TC = 25C
dc
dc
CURRENT LIMIT
THERMAL LIMIT
MPSW55
MPSW56
2.0
5.0
10
20
60 80 100

Area
2709
MOTOROLA
MPSW63
MPSW64 *
PNP Silicon
COLLECTOR 3
BASE
2
EMITTER 1
1
CASE 2905, STYLE 1

TO92 (TO226AE)
MAXIMUM RATINGS
Symbol
MPSW63
MPSW64
Unit
VCES
30
Vdc
VCBO
30
Vdc
VEBO
10
Vdc
IC
500
mAdc

Derate above 25C
PD
1.0
8.0
Watt
mW/C

Derate above 25C
PD
2.5
20
Watts
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit
RqJA
125
C/W
RqJC
50
C/W
Rating

Temperature Range
Characteristic

Characteristic
Symbol
Min
Max
Unit
V(BR)CES
30
Vdc

(VCB = 30 Vdc, IE = 0)
ICBO
100
nAdc

(VEB = 10 Vdc, IC = 0)
IEBO
100
nAdc
OFF CHARACTERISTICS
(IC = 100 Adc, VBE = 0)
2710
MPSW63 MPSW64
Characteristic
Symbol
Min
Max
MPSW63
MPSW64
5,000
10,000
MPSW63
MPSW64
10,000
20,000
Unit
DC Current Gain
hFE

VCE(sat)
1.5
Vdc
VBE(on)
2.0
Vdc
fT
125
MHz

h FE, DC CURRENT GAIN (X1.0 k)
200
TJ = 125C
100
70
50
10 V
25C
30
VCE = 2.0 V
20
5.0 V
10
7.0
5.0
3.0
2.0
0.3
55C
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
300

2.0
TJ = 25C
V, VOLTAGE (VOLTS)
1.6
1.2
0.8

IC/IB = 100
0.4
0
0.3 0.5 1.0
3.0 5.0
10
30 50 100
300
2.0
TJ = 25C
1.8
1.6
50 mA 100 mA 175 mA
300 mA
1.4
1.2
1.0
0.8
IC = 10 mA
0.6
0.1 0.3
1.0 3.0
10
30
100 300 1 k 3 k 10 k
2711
+5.0
+4.0
+3.0
+25C TO +125C
+2.0
+1.0
50C TO +25C
0
1.0
2.0
*RqVC FOR VCE(sat)
3.0
50C TO +25C
4.0
RqVB FOR VBE
5.0
0.3 0.5 1.0 2.0
20
+25C TO +125C
5.0
10
50 100
20
10 V
60
5.0 V
40
30
20
0.3 0.5 1.0 2.0
2 k
C, CAPACITANCE (pF)
100
5.0 10
20
50 100
300
7.0
TJ = 25C
f = 1.0 MHz
3.0
2712
VCE = 20 V
200
Cibo
2.0
0.1 0.2
TJ = 25C
400
300
Cobo
5.0
600
15
10
300
R qV , TEMPERATURE COEFFICIENT (mV/ C)
MPSW63 MPSW64
0.5
1.0
2.0
5.0
10
20 30
CURRENT LIMIT
THERMAL LIMIT
1 k
100 ms
1.0 mS
500
1.0 s
TC = 25C
TA = 25C
200
DUTY CYCLE 10%
100
1.5 2.0
5.0
10
20
30
MOTOROLA
MPSW92
PNP Silicon
COLLECTOR
3
2
BASE
1
EMITTER
CASE 2905, STYLE 1

TO92 (TO226AE)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
300
Vdc
VCBO
300
Vdc
VEBO
5.0
Vdc
IC
500
mAdc

Derate above 25C
PD
1.0
8.0
Watt
mW/C

Derate above 25C
PD
2.5
20
Watts
mW/C
TJ, Tstg
55 to +150

Temperature Range
Symbol
Max
Unit
Characteristic
RqJA
125
C/W
RqJC
50
C/W

Characteristic
Symbol
Min
Max
Unit

(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
300
Vdc

(IC = 100 Adc, IE = 0)
V(BR)CBO
300
Vdc

(IE = 100 Adc, IC = 0)
V(BR)EBO
5.0
Vdc

(VCB = 200 Vdc, IE = 0)
ICBO
0.25
Adc

(VEB = 3.0 Vdc, IC = 0)
IEBO
0.1
Adc
OFF CHARACTERISTICS
2713
MPSW92
Characteristic
Symbol
Min
Max
25
40
25
Unit
DC Current Gain
hFE

VCE(sat)
0.5
Vdc

VBE(sat)
0.9
Vdc
fT
50
MHz
Ccb
6.0
pF
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
TJ = 125C
VCE = 10 V
200
25C
100
55C
70
50
30
20
1.0
2714
2.0 3.0
5.0 7.0 10
20 30
50 70 100
0.7
TJ = 25C
IC = 20 mA
0.6
IC = 30 mA
0.5
0.4
0.3
IC = 10 mA
0.2
0.1
0
0.1 0.2
0.5
1.0 2.0
5.0
10
20 30
MPSW92
R qV, TEMPERATURE COEFFICIENTS (mV/ C)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1.0
2.0 3.0
5.0 7.0 10

20 30
50 70 100
25C TO 125C
1.5
1.0
RqVC FOR VCE(sat)
0.5
55C TO 25C
0
0.5
1.0
55C TO 125C
1.5
RqVB FOR VBE
2.0
2.5
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
Ceb
TJ = 25C
30
20
10
7.0
5.0
Ccb
3.0
2.0
1.0
0.2
IC/IB = 10
2.0
100
70
50
C, CAPACITANCE (pF)
5.0
V, VOLTAGE (VOLTS)
TJ = 25C
2.5
0.5 1.0
2.0
5.0 10
20
50 100 200
100
70
50
TJ = 25C
VCE = 20 V
f = 20 MHz
30
20
10
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
1 k
500
100 ms
200
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN
LIMIT
1.0 s
100
1.0 ms
50
20
TA = 25C
MPSW92
TC = 25C
DUTY CYCLE 10%

10
10
20
50
100
200 300
2715
MOTOROLA
PNP RF Amplifier Transistor

Surface Mount
MSA1022-CT1
COLLECTOR
3
3
2
1
2
BASE
1
EMITTER

Rating
Symbol
Value
Unit
VCBO
30
Vdc
VCEO
20
Vdc
EmitterBase Voltage
VEBO
5.0
Vdc
IC
30
mAdc

SC59
Symbol
Max
Unit
Power Dissipation
Characteristic
PD
200
mW
TJ
150
Storage Temperature
Tstg
55 ~ +150

Symbol
Min
Max
Unit

(VCB = 10 Vdc, IE = 0)
ICBO
0.1
Adc

(VCE = 20 Vdc, IB = 0)
ICEO
100
Adc

(VEB = 5.0 Vdc, IC = 0)
IEBO
10
Adc
DC Current Gain(1)
(VCE = 10 Vdc, IC = 1.0 mAdc)
hFE
110
220

(VCB = 10 Vdc, IE = 1.0 mAdc)
fT
150
MHz
Characteristic
DEVICE MARKING
Marking Symbol
ECX
The X represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
(Replaces MSA1022BT1/D)
2716
MOTOROLA
PNP General Purpose Amplifier

Transistor Surface Mount
MSB709-RT1
COLLECTOR
3
3
2
1
2
BASE
1
EMITTER

Rating
Symbol
Value
Unit
V(BR)CBO
60
Vdc
V(BR)CEO
45
Vdc
EmitterBase Voltage
V(BR)EBO
7.0
Vdc
IC
100
mAdc
IC(P)
200
mAdc
Symbol
Max
Unit
Power Dissipation
PD
200
mW
TJ
150
Storage Temperature
Tstg
55 ~ +150

Collector Current Peak

SC59
Characteristic

Symbol
Min
Max
Unit
V(BR)CEO
45
Vdc
V(BR)CBO
60
Vdc
V(BR)EBO
7.0
Vdc
ICBO
0.1
Adc
CollectorEmitter Cutoff Current (VCE = 10 Vdc, IB = 0)
ICEO
100
nAdc
DC Current Gain(1)
hFE1
210
340

VCE(sat)
0.5
Vdc
Characteristic
DEVICE MARKING
Marking Symbol
ARX
REV 3
2717
MOTOROLA
PNP General Purpose Amplifier

MSB710-RT1
COLLECTOR
3
2
BASE
1
EMITTER
2
1

SC59

Symbol
Value
Unit
V(BR)CBO
60
Vdc
V(BR)CEO
50
Vdc
EmitterBase Voltage
V(BR)EBO
7.0
Vdc
IC
500
mAdc
IC(P)
1.0
Adc
Symbol
Max
Unit
Power Dissipation
PD
200
mW
TJ
150
Storage Temperature
Tstg
55 ~ +150
Rating

Characteristic
DEVICE MARKING
CRX
replaces MSB710QT1/D
2718
MSB710-RT1
Characteristic
Symbol
Min
Max
Unit

(IC = 10 mAdc, IB = 0)
V(BR)CEO
50
Vdc

(IC = 10 Adc, IE = 0)
V(BR)CBO
60
Vdc

(IE = 10 Adc, IC = 0)
V(BR)EBO
7.0
Vdc
ICBO
0.1
Adc
hFE1
hFE2
120
40
240

VCE(sat)
0.6
Vdc
CollectorBase Saturation Voltage

VBE(sat)
1.5
Vdc
Cob
15
pF

(VCB = 20 Vdc, IE = 0)
DC Current Gain(1)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
2719
MOTOROLA
PNP Silicon General Purpose

MSB1218A-RT1
This PNP Silicon Epitaxial Planar Transistor is designed for general purpose
amplifier applications. This device is housed in the SC70/SOT323 package
PNP GENERAL
PURPOSE AMPLIFIER
TRANSISTORS
SURFACE MOUNT
High hFE, 210 460

Available in 8 mm, 7inch/3000 Unit Tape and Reel
1
2
CASE 41902, STYLE 3

SC70/SOT323

Symbol
Value
Unit
V(BR)CBO
45
Vdc
V(BR)CEO
45
Vdc
EmitterBase Voltage
V(BR)EBO
7.0
Vdc
IC
100
mAdc
IC(P)
200
mAdc
Rating

COLLECTOR
3
DEVICE MARKING
MSB1218ART1 = BR
1
BASE
Rating
Symbol
Max
Unit
PD
150
mW
TJ
150
Tstg
55 ~ + 150
2
EMITTER
Symbol
Min
Max
Unit
Characteristic
V(BR)CEO
45
Vdc
V(BR)CBO
45
Vdc
V(BR)EBO
7.0
Vdc
ICBO
0.1
ICEO
100
hFE1
210
340
VCE(sat)
0.5
Vdc
DC Current Gain(2) (VCE = 10 Vdc, IC = 2.0 mAdc)

CollectorEmitter Saturation Voltage(2) (IC = 100 mAdc, IB = 10 mAdc)
REV 2
2720
MSB1218A-RT1
TA = 25C
250
200
150
100
RJA = 833C/W
50
0
50
50
100
300 A
250
200
60
150
100
30
IB = 50 A
0
12
Figure 2. IC VCE
15
2
VCE = 10 V
TA = 25C
TA = 75C
DC CURRENT GAIN
90
150
1000
TA = 25C
100
10
0.1
120
10
TA = 25C
1.5
0.5
0
0.01
100
0.1
10
100
900
800
700
600
500
400
300
TA = 25C
VCE = 5 V
200
100
0
0.2
0.5
10
20
40
60
80
100
150 200
2721
13
14
12
12
MSB1218A-RT1
11
10
9
8
7
6
10
8
6
4
2
2
VEB (V)
2722
10
20
30
40
VCB (V)
MOTOROLA
NPN RF Amplifier Transistors

Surface Mount
COLLECTOR
3
MSC2295-BT1
MSC2295-CT1
2
BASE
1
EMITTER
2
1

Rating
Symbol
Value
Unit
V(BR)CBO
30
Vdc
V(BR)CEO
20
Vdc
EmitterBase Voltage
V(BR)EBO
5.0
Vdc
IC
30
mAdc
Symbol
Max
Unit
Power Dissipation
PD
200
mW
TJ
150
Storage Temperature
Tstg
55 ~ +150

SC59
Characteristic

Characteristic
(VCB = 10 Vdc, IE = 0)
DC Current Gain(1)
(VCB = 10 Vdc, IC = 1.0 mAdc)
Symbol
Min
Max
Unit
ICBO
0.1
Adc
70
110
140
220
fT
150
MHz
Cre
1.5
pF
hFE
MSC2295BT1
MSC2295CT1
CollectorGain Bandwidth Product

(VCB = 10 Vdc, IE = 1.0 mAdc)
Reverse Transistor Capacitance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 10.7 MHz)
DEVICE MARKING
Marking Symbol
VBX
VCX
MSC2295BT1
MSC2295CT1
2723
MOTOROLA
NPN RF Amplifier Transistor

Surface Mount
MSC3130T1
COLLECTOR
3
3
2
1
2
BASE
1
EMITTER

Rating
Symbol
Value
Unit
VCBO
15
Vdc
VCEO
10
Vdc
EmitterBase Voltage
VEBO
3.0
Vdc
IC
50
mAdc

SC59
Symbol
Max
Unit
Power Dissipation
Characteristic
PD
200
mW
TJ
150
Storage Temperature
Tstg
55 ~ +150

Symbol
Min
Max
Unit

(VCB = 10 Vdc, IE = 0)
ICBO
1.0
Adc

(IC = 2.0 mAdc, IB = 0)
VCEO
10
Vdc

(IE = 10 Adc, IC = 0)
VEBO
3.0
Vdc
DC Current Gain(1)
hFE
75
400

VCE(sat)
0.5
Vdc

(VCB = 4.0 Vdc, IE = 5.0 mAdc)
fT
1.4
2.5
GHz
Characteristic
DEVICE MARKING
Marking Symbol
1SX
2724
MOTOROLA
NPN General Purpose Amplifier

Transistors Surface Mount
MSD601-RT1*
MSD601-ST1
COLLECTOR
3
2
BASE
1
EMITTER
2
1
Symbol
Value
Unit
V(BR)CBO
60
Vdc
V(BR)CEO
50
Vdc
EmitterBase Voltage
V(BR)EBO
7.0
Vdc
IC
100
mAdc
IC(P)
200
mAdc
Symbol
Max
Unit
Power Dissipation
PD
200
mW
TJ
150
Storage Temperature
Tstg
55 ~ +150
Rating


SC59
Characteristic

Characteristic
Symbol
Min
Max
Unit
V(BR)CEO
50
Vdc
V(BR)CBO
60
Vdc
V(BR)EBO
7.0
Vdc
ICBO
0.1
Adc
ICEO
100
nAdc
DC Current Gain(1)
hFE1
hFE2
210
290
90
340
460
VCE(sat)
0.5
MSD601RT1
MSD601ST1

Vdc
DEVICE MARKING
Marking Symbol
YRX
YSX
MSD601RT1
MSD601ST1
REV 2
2725
MOTOROLA
NPN General Purpose Amplifier

MSD602-RT1
COLLECTOR
3
3
2
2
BASE

Symbol
Value
Unit
V(BR)CBO
60
Vdc
V(BR)CEO
50
Vdc
EmitterBase Voltage
V(BR)EBO
7.0
Vdc
IC
500
mAdc
IC(P)
1.0
Adc
Symbol
Max
Unit
Power Dissipation
PD
200
mW
TJ
150
Storage Temperature
Tstg
55 ~ +150
Rating

1
EMITTER

SC59
Characteristic

Symbol
Min
Max
Unit
CollectorEmitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
V(BR)CEO
50
Vdc
V(BR)CBO
60
Vdc
Characteristic
V(BR)EBO
7.0
Vdc
ICBO
0.1
Adc
DC Current Gain(1)
hFE1
hFE2
120
40
240
VCE(sat)
0.6
Vdc
Cob
15
pF

DEVICE MARKING
Marking Symbol
WRX
REV 1
2726
MOTOROLA
NPN Low Voltage Output

Amplifier Surface Mount
MSD1328-RT1
COLLECTOR
3
3
2
1
2
BASE
1
EMITTER

Rating
Symbol
Value
Unit
V(BR)CBO
25
Vdc
V(BR)CEO
20
Vdc
EmitterBase Voltage
V(BR)EBO
12
Vdc
IC
500
mAdc
IC(P)
1000
mAdc
Symbol
Max
Unit
Power Dissipation
PD
200
mW
TJ
150
Storage Temperature
Tstg
55 ~ +150


SC59
Characteristic

Symbol
Min
Max
Unit

(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
20
Vdc

(IC = 10 Adc, IE = 0)
V(BR)CBO
25
Vdc

(IE = 10 Adc, IE = 0)
V(BR)EBO
12
Vdc

(VCB = 25 Vdc, IE = 0)
DC Current Gain(1)
ICBO
0.1
Adc
hFE
200
350
VCE(sat)
0.4
Vdc
BaseEmitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc)
VBE(sat)
1.2
Vdc
Characteristic
DEVICE MARKING
Marking Symbol
1DRX
2727
MOTOROLA
NPN Silicon General Purpose

MSD1819A-RT1
This NPN Silicon Epitaxial Planar Transistor is designed for general purpose
amplifier applications. This device is housed in the SC-70/SOT-323 package
NPN GENERAL
PURPOSE AMPLIFIER
TRANSISTORS
SURFACE MOUNT
High hFE, 210 460

Available in 8 mm, 7-inch/3000 Unit Tape and Reel

Rating
Symbol
Value
Unit
V(BR)CBO
60
Vdc
V(BR)CEO
50
Vdc
V(BR)EBO
7.0
Vdc
IC
100
mAdc
IC(P)
200
mAdc

1
2
CASE 41902, STYLE 3

SC70/SOT323
COLLECTOR
3
DEVICE MARKING
MSD1819A-RT1 = ZR
Symbol
Max
Unit
Rating
PD
150
mW
TJ
150
Tstg
55 ~ + 150
1
BASE
2
EMITTER
Characteristic
Symbol
Min
Max
Unit
V(BR)CEO
50
Vdc
V(BR)CBO
60
Vdc
Emitter-Base Breakdown Voltage (IE = 10 Adc, IE = 0)
V(BR)EBO
7.0
Vdc
ICBO
0.1
Collector-Emitter Cutoff Current (VCE = 10 Vdc, IB = 0)
ICEO
100
DC Current Gain(2)
hFE1
hFE2
210
90
340
VCE(sat)
0.5
Collector-Emitter Saturation Voltage(2)

Vdc
REV 2
2728
250
60
160 A
TA = 25C
MSD1819A-RT1
200
150
100
50
0
50
RJA = 833C/W
0
50
100
50
140 A
40
120 A
100 A
30
60 A
20
40 A
10
0
150
80 A
IB = 20 A
0
2
4
6
Figure 2. IC VCE
2
1000
VCE = 10 V
TA = 25C
DC CURRENT GAIN
TA = 75C
TA = 25C
100
10
0.1
TA = 25C
1.5
0.5
0
0.01
1
10
100
0.1
1
10
100
900
800
700
600
500
400
TA = 25C
VCE = 5 V
300
200
100
0
0.2
0.5
10
20
40
60
80
100
150 200
2729
MSD1819A-RT1
7
6
18
20
16
14
12
10
5
4
3
2
2730
10
20
VEB (V)
VCB (V)
30
40
MOTOROLA
MUN2111T1
SERIES

resistor and a baseemitter resistor. The BRT eliminates these individual components
cost and board space. The device is housed in the SC59 package which is designed
for low power surface mount applications.
PNP SILICON
BIAS RESISTOR
TRANSISTOR
PIN3
COLLECTOR
(OUTPUT)
Reduces Board Space

R1
The SC59 package can be soldered using wave or reflow.

PIN2
The modified gullwinged leads absorb thermal stress duringBASE R2
soldering eliminating the possibility of damage to the die.
(INPUT)
Available in 8 mm embossed tape and reel
Use the Device Number to order the 7 inch/3000 unit reel.
3
2
1
PIN1
EMITTER
(GROUND)

(SC59)

Symbol
Value
Unit
Rating
VCBO
50
Vdc
VCEO
50
Vdc
Collector Current
IC
100
mAdc

Derate above 25C
PD
*200
1.6
mW
mW/C
RJA
625
C/W
TJ, Tstg
65 to +150
TL
260
10
C
Sec
Thermal Resistance JunctiontoAmbient (surface mounted)
Time in Solder Bath

Device
Marking
R1 (K)
R2 (K)
MUN2111T1
MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1(2)
MUN2116T1(2)
MUN2130T1(2)
MUN2131T1(2)
MUN2132T1(2)
MUN2133T1(2)
MUN2134T1(2)
6A
6B
6C
6D
6E
6F
6G
6H
6J
6K
6L
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
10
22
47
47
1.0
2.2
4.7
47
47
REV 5
2731
MUN2111T1 SERIES
Symbol
Min
Typ
Max
Unit
CollectorBase Cutoff Current (VCB = 50 V, IE = 0)
ICBO
100
nAdc
CollectorEmitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
500
nAdc

(VEB = 6.0 V, IC = 0)
IEBO
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
mAdc
CollectorBase Breakdown Voltage (IC = 10 A, IE = 0)
V(BR)CBO
50
Vdc
CollectorEmitter Breakdown Voltage(3) (IC = 2.0 mA, IB = 0)
V(BR)CEO
50
Vdc
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
60
100
140
140
250
250
5.0
15
27
140
130
MUN2111T1
MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1
MUN2130T1
0.25
0.25
0.25
0.25
0.25
0.25
MUN2131T1
0.25
MUN2116T1
MUN2132T1
MUN2134T1
0.25
0.25
0.25
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Characteristic
OFF CHARACTERISTICS
MUN2111T1
MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1
MUN2116T1
MUN2130T1
MUN2131T1
MUN2132T1
MUN2133T1
MUN2134T1
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)

(IC = 10 mA, IB = 0.3 mA)
(IC = 10 mA, IB = 5.0 mA)

(IC = 10 mA, IB = 1.0 mA)
Output Voltage (on)

(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k)
MUN2111T1
MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1
MUN2116T1
MUN2130T1
MUN2131T1
MUN2132T1
MUN2133T1
MUN2134T1
VCE(sat)
Vdc
VOL
MUN2111T1
MUN2112T1
MUN2114T1
MUN2115T1
MUN2116T1
MUN2130T1
MUN2131T1
MUN2132T1
MUN2133T1
MUN2134T1
MUN2113T1
Vdc
2732
MUN2111T1 SERIES
ELECTRICAL CHARACTERISTICS (Continued) (TA = 25C unless otherwise noted)
Characteristic
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k) MUN2130T1
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k) MUN2115T1
MUN2116T1
MUN2131T1
MUN2132T1
Input Resistor
Resistor Ratio
Symbol
Min
Typ
Max
Unit
VOH
4.9
Vdc
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
R1/R2
0.8
0.17
0.8
0.055
0.38
1.0
0.21
1.0
0.1
0.47
1.2
0.25
1.2
0.185
0.56
MUN2111T1
MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1
MUN2116T1
MUN2130T1
MUN2131T1
MUN2132T1
MUN2133T1
MUN2134T1
MUN2111T1/MUN2112T1/MUN2113T1
MUN2114T1
MUN2115T1/MUN2116T1
MUN2133T1
MUN2134T1
250
200
150
100
50
0
50
RJA = 625C/W
0
50
100
150
2733
MUN2111T1 SERIES
1000
1
TYPICAL ELECTRICAL CHARACTERISTICS MUN2111T1
IC/IB = 10
TA = 25C
25C
75C
0.1
0.01
0
20
40
60
VCE = 10 V
TA = 75C
25C
100
10
80
25C
10
100
50
10
20
30
40
25C
75C
f = 1 MHz
lE = 0 V
TA = 25C
100
TA = 25C
10
0.1
0.01
0.001
VO = 5 V
0
6
7
3
4
5
10
100
VO = 0.2 V
TA = 25C
10
25C
75C
1
0.1
10
20
30
40
50
2734
MUN2111T1 SERIES
1000
10
IC/IB = 10
TA = 25C
25C
1
75C
0.1
0.01
VCE = 10 V
TA = 75C
25C
25C
100
10
0
20
40
60
10
80
100
25C
75C
f = 1 MHz
lE = 0 V
TA = 25C
TA = 25C
100
10
0.1
0.01
VO = 5 V
0.001
50
10
20
30
40
3
4
5
6
7
10
100
VO = 0.2 V
TA = 25C
10
25C
75C
0.1
10
20
30
40
50
2735
MUN2111T1 SERIES
1000
IC/IB = 10
TA = 25C
25C
75C
0.1
0.01
10
20
30
TA = 75C
25C
25C
100
10
40
10
100
f = 1 MHz
lE = 0 V
TA = 25C
0.8
0.6
0.4
0.2
100
50
10
20
30
40
25C
TA = 75C
25C
10
1
0.1
0.01
0.001
VO = 5 V
0
3
4
5
6
7
10
100
VO = 0.2 V
TA = 25C
25C
75C
10
0.1
10
20
30
40
50
2736
MUN2111T1 SERIES
180
1
IC/IB = 10
TA = 25C
25C
0.1
75C
0.01
0.001
20
40
60
25C
140
25C
120
100
80
60
40
20
0
80
TA = 75C
VCE = 10 V
160
100
f = 1 MHz
lE = 0 V
TA = 25C
3.5
TA = 75C
4
90 100
4.5
3
2.5
2
1.5
1
0.5
0
8 10 15 20 40 50 60 70 80
6 8 10 15 20 25 30 35
40
45
50
25C
25C
10
VO = 5 V
1
4
6
10
+12 V
10
VO = 0.2 V
TA = 25C
25C
Typical Application
for PNP BRTs
75C
1
LOAD
0.1
10
20
30
40
50
2737
MOTOROLA
MUN2211T1
SERIES

cost and board space. The device is housed in the SC59 package which is designed
for low power surface mount applications.
NPN SILICON
BIAS RESISTOR
TRANSISTOR

Reduces Board Space
PIN3
COLLECTOR
(OUTPUT)
The SC59 package can be soldered using wave or reflow.

The modified gullwinged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die.
R1
2
PIN2 R2
BASE
(INPUT)

(SC59)
PIN1
EMITTER
(GROUND)

Rating
Symbol
Value
Unit
VCBO
50
Vdc
VCEO
50
Vdc
Collector Current
IC
100
mAdc

Derate above 25C
PD
*200
1.6
mW
mW/C
RJA
625
C/W
TJ, Tstg
65 to +150
TL
260
10
C
Sec
Time in Solder Bath

Device
Marking
R1 (K)
R2 (K)
MUN2211T1
MUN2212T1
MUN2213T1
MUN2214T1
MUN2215T1(2)
MUN2216T1(2)
MUN2230T1(2)
MUN2231T1(2)
MUN2232T1(2)
MUN2233T1(2)
MUN2234T1(2)
8A
8B
8C
8D
8E
8F
8G
8H
8J
8K
8L
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
10
22
47
47
1.0
2.2
4.7
47
47
REV 4
2738
MUN2211T1 SERIES
Symbol
Min
Typ
Max
Unit
ICBO
100
nAdc
ICEO
500
nAdc

(VEB = 6.0 V, IC = 0)
IEBO
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
mAdc
V(BR)CBO
50
Vdc
V(BR)CEO
50
Vdc
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
60
100
140
140
350
350
5.0
15
30
200
150
VCE(sat)
0.25
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Characteristic
OFF CHARACTERISTICS
MUN2211T1
MUN2212T1
MUN2213T1
MUN2214T1
MUN2215T1
MUN2216T1
MUN2230T1
MUN2231T1
MUN2232T1
MUN2233T1
MUN2234T1
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
MUN2211T1
MUN2212T1
MUN2213T1
MUN2214T1
MUN2215T1
MUN2216T1
MUN2230T1
MUN2231T1
MUN2232T1
MUN2233T1
MUN2234T1
CollectorEmitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)

(IC = 10 mA, IB = 5 mA) MUN2230T1/MUN2231T1
(IC = 10 mA, IB = 1 mA) MUN2215T1/MUN2216T1/
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k)
VOL
MUN2211T1
MUN2212T1
MUN2214T1
MUN2215T1
MUN2216T1
MUN2230T1
MUN2231T1
MUN2232T1
MUN2233T1
MUN2234T1
MUN2213T1
Vdc
Vdc
Vdc
2739
MUN2211T1 SERIES
ELECTRICAL CHARACTERISTICS (Continued) (TA = 25C unless otherwise noted)
Characteristic
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k) MUN2230T1
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k) MUN2215T1
MUN2216T1
MUN2233T1
Input Resistor
MUN2211T1
MUN2212T1
MUN2213T1
MUN2214T1
MUN2215T1
MUN2216T1
MUN2230T1
MUN2231T1
MUN2232T1
MUN2233T1
MUN2234T1
Resistor Ratio
MUN2214T1
MUN2215T1/MUN2216T1
MUN2233T1
MUN2234T1
Symbol
Min
Typ
Max
Unit
VOH
4.9
Vdc
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
R1/R2
0.8
0.17
0.8
0.055
0.38
1.0
0.21
1.0
0.1
0.47
1.2
0.25
1.2
0.185
0.56
250
200
150
100
RJA = 625C/W
50
0
50
0
50
100
150
2740
MUN2211T1 SERIES
1000
IC/IB = 10
TA = 25C
25C
75C
0.1
0.01
0.001
20
40
60
VCE = 10 V
TA = 75C
25C
25C
100
10
80
10
100
50
10
20
30
40
25C
75C
f = 1 MHz
IE = 0 V
TA = 25C
100
TA = 25C
10
0.1
0.01
0.001
VO = 5 V
0
5
6
7
3
4
10
10
TA = 25C
VO = 0.2 V
25C
75C
0.1
10
20
30
40
50
2741
MUN2211T1 SERIES
1000
1
IC/IB = 10
TA = 25C
25C
75C
0.1
0.01
VCE = 10 V
TA = 75C
25C
25C
100
10
0.001
0
20
40
60
80
100
f = 1 MHz
IE = 0 V
TA = 25C
100
10
75C
25C
TA = 25C
10
0.1
0.01
VO = 5 V
10
20
30
40
50
0.001
10
100
VO = 0.2 V
TA = 25C
10
75C
25C
0.1
10
20
30
40
50
2742
MUN2211T1 SERIES
10
IC/IB = 10
1000
TA = 25C
25C
75C
0.1
0.01
0
20
40
60
VCE = 10 V
TA = 75C
25C
25C
100
10
80
10
100
0.6
0.4
TA = 25C
10
0.1
0.01
0.2
25C
75C
f = 1 MHz
IE = 0 V
TA = 25C
0.8
100
50
10
20
30
40
VO = 5 V
0.001
4
6
10
100
VO = 0.2 V
TA = 25C
10
25C
75C
0.1
0
10
20
30
40
50
2743
MUN2211T1 SERIES
300
1
TA = 25C
IC/IB = 10
25C
0.1
75C
0.01
0.001
20
40
60
25C
200
25C
150
100
50
0
80
TA = 75C
VCE = 10
250
100
75C
f = 1 MHz
lE = 0 V
TA = 25C
3.5
90 100
2.5
2
1.5
1
0.5
0
8 10 15 20 40 50 60 70 80
6 8 10 15 20 25 30 35 40
45
50
25C
TA = 25C
10
VO = 5 V
1
4
6
10
10
VO= 0.2 V
TA = 25C
25C
75C
1
0.1
10
20
30
40
50
2744
MUN2211T1 SERIES
+12 V
ISOLATED
LOAD
FROM P OR
OTHER LOGIC
+12 V
VCC
OUT
IN
LOAD
2745
MOTOROLA
MUN5111DW1T1
SERIES
Dual Bias Resistor Transistors

PNP Silicon Surface Mount Transistors with
integrating them into a single device. In the MUN5111DW1T1 series, two BRT devices
are housed in the SOT363 package which is ideal for lowpower surface mount
applications where board space is at a premium.
5
4

SOT363

Reduces Board Space
(3)
(2)
R1
(1)
R2
Q1
Q2
R2
(4)
R1
(5)
(6)
MAXIMUM RATINGS (TA = 25C unless otherwise noted, common for Q1 and Q2)
Symbol
Value
Unit
VCBO
50
Vdc
VCEO
50
Vdc
IC
100
mAdc
RJA
833
C/W
TJ, Tstg
65 to +150
Total Package Dissipation @ TA = 25C(1)
PD
*150
mW
Rating
Collector Current
DEVICE MARKING AND RESISTOR VALUES: MUN5111DW1T1 SERIES

Device
MUN5111DW1T1
MUN5112DW1T1
MUN5113DW1T1
MUN5114DW1T1
MUN5115DW1T1(2)
MUN5116DW1T1(2)
MUN5130DW1T1(2)
MUN5131DW1T1(2)
MUN5132DW1T1(2)
MUN5133DW1T1(2)
MUN5134DW1T1(2)
MUN5135DW1T1(2)
Marking
R1 (K)
R2 (K)
0A
0B
0C
0D
0E
0F
0G
0H
0J
0K
0L
0M
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
10
22
47
47
1.0
2.2
4.7
47
47
47
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
REV 2
2746
MUN5111DW1T1 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, common for Q1 and Q2)
Characteristic
Symbol
Min
Typ
Max
Unit
ICBO
100
nAdc
ICEO
500
nAdc

(VEB = 6.0 V, IC = 0)
IEBO
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
mAdc
V(BR)CBO
50
Vdc
V(BR)CEO
50
Vdc
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
60
100
140
140
250
250
5.0
15
27
140
130
140
VCE(sat)
0.25
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
OFF CHARACTERISTICS
MUN5111DW1T1
MUN5112DW1T1
MUN5113DW1T1
MUN5114DW1T1
MUN5115DW1T1
MUN5116DW1T1
MUN5130DW1T1
MUN5131DW1T1
MUN5132DW1T1
MUN5133DW1T1
MUN5134DW1T1
MUN5135DW1T1
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
MUN5111DW1T1
MUN5112DW1T1
MUN5113DW1T1
MUN5114DW1T1
MUN5115DW1T1
MUN5116DW1T1
MUN5130DW1T1
MUN5131DW1T1
MUN5132DW1T1
MUN5133DW1T1
MUN5134DW1T1
MUN5135DW1T1
CollectorEmitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA)

(IC = 10 mA, IB = 5 mA) MUN5130DW1T1/MUN5131DW1T1
(IC = 10 mA, IB = 1 mA) MUN5115DW1T1/MUN5116DW1T1/
MUN5132DW1T1/MUN5133DW1T1/MUN5134DW1T1
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) MUN5111DW1T1
MUN5112DW1T1
MUN5114DW1T1
MUN5115DW1T1
MUN5116DW1T1
MUN5130DW1T1
MUN5131DW1T1
MUN5132DW1T1
MUN5133DW1T1
MUN5134DW1T1
MUN5135DW1T1
VOL
Vdc
Vdc
2747
MUN5111DW1T1 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, common for Q1 and Q2) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
VOH
4.9
Vdc
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
R1/R2
0.8
0.17
0.8
0.055
0.38
0.038
1.0
0.21
1.0
0.1
0.47
0.047
1.2
0.25
1.2
0.185
0.56
0.056

MUN5116DW1T1
MUN5131DW1T1
MUN5132DW1T1
Input Resistor
MUN5111DW1T1
MUN5112DW1T1
MUN5113DW1T1
MUN5114DW1T1
MUN5115DW1T1
MUN5116DW1T1
MUN5130DW1T1
MUN5131DW1T1
MUN5132DW1T1
MUN5133DW1T1
MUN5134DW1T1
MUN5135DW1T1
Resistor Ratio MUN5111DW1T1/MUN5112DW1T1/MUN5113DW1T1

MUN5114DW1T1
MUN5115DW1T1/MUN5116DW1T1
MUN5133DW1T1
MUN5134DW1T1
MUN5135DW1T1
250
200
150
100
50
0
50
RJA = 833C/W
0
50
100
150
2748
MUN5111DW1T1 SERIES
1000
1
TYPICAL ELECTRICAL CHARACTERISTICS MUN5111DW1T1
IC/IB = 10
TA = 25C
0.1
25C
75C
0.01
0
20
100
25C
10
50
100
50
10
20
30
40
100
25C
75C
f = 1 MHz
lE = 0 V
TA = 25C
TA = 75C
25C
10
40
VCE = 10 V
TA = 25C
10
0.1
0.01
0.001
VO = 5 V
0
6
7
3
4
5
10
100
VO = 0.2 V
TA = 25C
10
25C
75C
0.1
10
20
30
40
50
2749
MUN5111DW1T1 SERIES
1000
10
IC/IB = 10
25C
TA = 25C
75C
0.1
0.01
VCE = 10 V
TA = 75C
25C
25C
100
10
0
20
40
50
10
100
25C
75C
f = 1 MHz
lE = 0 V
TA = 25C
TA = 25C
100
50
10
20
30
40
10
0.1
0.01
0.001
VO = 5 V
0
3
4
5
6
7
10
100
VO = 0.2 V
TA = 25C
10
25C
75C
0.1
10
20
30
40
50
2750
MUN5111DW1T1 SERIES
1000
IC/IB = 10
TA = 25C
25C
75C
0.1
0.01
10
20
30
TA = 75C
25C
25C
100
10
40
10
100
f = 1 MHz
lE = 0 V
TA = 25C
0.8
0.6
0.4
0.2
100
25C
10
1
0.1
0.01
0.001
50
10
20
30
40
25C
TA = 75C
VO = 5 V
0
3
4
5
6
7
10
100
VO = 0.2 V
TA = 25C
25C
75C
10
0.1
10
20
30
40
50
2751
MUN5111DW1T1 SERIES
180
IC/IB = 10
TA = 25C
25C
0.1
75C
0.01
0.001
20
40
60
25C
140
25C
120
100
80
60
40
20
0
80
TA = 75C
VCE = 10 V
160
100
TA = 75C
3.5
f = 1 MHz
lE = 0 V
TA = 25C
4
80 90 100
4.5
3
2.5
2
1.5
1
0.5
0
8 10 15 20 40 50 60 70
6 8 10 15 20 25 30 35 40
45
25C
10
VO = 5 V
1
50
25C
4
6
10
10
VO = 0.2 V
25C
TA = 25C
75C
0.1
10
20
30
40
50
2752
MUN5111DW1T1 SERIES
HFE, DC CURRENT GAIN (NORMALIZED)
1000
TA = 25C
VCE = 10 V
VCE = 5.0 V
100
1.0
10
100
1000
TA = 25C
VCE = 10 V
VCE = 5.0 V
100
1.0
10
100
2753
MOTOROLA
MUN5111T1
SERIES

cost and board space. The device is housed in the SC70/SOT323 package which
is designed for low power surface mount applications.
PNP SILICON
BIAS RESISTOR
TRANSISTOR

Reduces Board Space
The SC70/SOT323 package can be soldered using
wave or reflow. The modified gullwinged leads absorb
thermal stress during soldering eliminating the possibility
of damage to the die.
the 13 inch/10,000 unit reel.
PIN3
COLLECTOR
(OUTPUT)
3
R1
PIN1 R2
BASE
(INPUT)
1
2
PIN2
EMITTER
(GROUND)
CASE 41902, STYLE 3

SC70/SOT323

Symbol
Value
Unit
VCBO
50
Vdc
VCEO
50
Vdc
Collector Current
IC
100
mAdc

Derate above 25C
PD
*150
1.2
mW
mW/C
Rating
Time in Solder Bath
RJA
833
C/W
TJ, Tstg
65 to +150
TL
260
10
C
Sec

Device
MUN5111T1
MUN5112T1
MUN5113T1
MUN5114T1
MUN5115T1(2)
MUN5116T1(2)
MUN5130T1(2)
MUN5131T1(2)
MUN5132T1(2)
MUN5133T1(2)
MUN5134T1(2)
Marking
R1 (K)
R2 (K)
6A
6B
6C
6D
6E
6F
6G
6H
6J
6K
6L
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
10
22
47
47
1.0
2.2
4.7
47
47
REV 2
2754
MUN5111T1 SERIES
Characteristic
Symbol
Min
Typ
Max
Unit
ICBO
100
nAdc
ICEO
500
nAdc

(VEB = 6.0 V, IC = 0)
IEBO
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
mAdc
V(BR)CBO
50
Vdc
V(BR)CEO
50
Vdc
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
60
100
140
140
250
250
5.0
15
27
140
130
VCE(sat)
0.25
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
OFF CHARACTERISTICS
MUN5111T1
MUN5112T1
MUN5113T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
MUN5111T1
MUN5112T1
MUN5113T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
CollectorEmitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA)

(IC = 10 mA, IB = 1 mA) MUN5115T1/MUN5116T1/
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k)
VOL
MUN5111T1
MUN5112T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
MUN5113T1
Vdc
Vdc
2755
MUN5111T1 SERIES
Characteristic
Symbol
Min
Typ
Max
Unit

(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k) MUN5130T1
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k)
MUN5115T1
MUN5116T1
MUN5131T1
MUN5132T1
VOH
4.9
Vdc
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
R1/R2
0.8
0.17
0.8
0.055
0.38
1.0
0.21
1.0
0.1
0.47
1.2
0.25
1.2
0.185
0.56
Input Resistor
MUN5111T1
MUN5112T1
MUN5113T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
Resistor Ratio
MUN5114T1
MUN5115T1/MUN5116T1
MUN5133T1
MUN5134T1
250
200
150
100
50
0
50
RJA = 833C/W
0
50
100
150
2756
MUN5111T1 SERIES
1000
1
IC/IB = 10
TA = 25C
0.1
25C
75C
0.01
0
20
100
25C
10
50
100
50
10
20
30
40
100
25C
75C
f = 1 MHz
lE = 0 V
TA = 25C
TA = 75C
25C
10
40
VCE = 10 V
TA = 25C
10
0.1
0.01
0.001
VO = 5 V
0
6
7
3
4
5
10
100
VO = 0.2 V
TA = 25C
10
25C
75C
0.1
10
20
30
40
50
2757
MUN5111T1 SERIES
1000
10
IC/IB = 10
25C
TA = 25C
75C
0.1
0.01
VCE = 10 V
TA = 75C
25C
25C
100
10
0
20
40
50
10
100
25C
75C
f = 1 MHz
lE = 0 V
TA = 25C
TA = 25C
100
50
10
20
30
40
10
0.1
0.01
0.001
VO = 5 V
0
3
4
5
6
7
10
100
VO = 0.2 V
TA = 25C
10
25C
75C
0.1
10
20
30
40
50
2758
MUN5111T1 SERIES
1000
IC/IB = 10
TA = 25C
25C
75C
0.1
0.01
10
20
30
TA = 75C
25C
25C
100
10
40
10
100
f = 1 MHz
lE = 0 V
TA = 25C
0.8
0.6
0.4
0.2
100
25C
10
1
0.1
0.01
0.001
50
10
20
30
40
25C
TA = 75C
VO = 5 V
0
3
4
5
6
7
10
100
VO = 0.2 V
TA = 25C
25C
75C
10
0.1
10
20
30
40
50
2759
MUN5111T1 SERIES
180
IC/IB = 10
TA = 25C
25C
0.1
75C
0.01
0.001
20
40
60
25C
140
25C
120
100
80
60
40
20
0
80
TA = 75C
VCE = 10 V
160
100
3.5
TA = 75C
f = 1 MHz
lE = 0 V
TA = 25C
3
2.5
2
1.5
1
0.5
0
6 8 10 15 20 25 30 35 40
45
25C
25C
10
VO = 5 V
1
50
4
6
10
+12 V
10
VO = 0.2 V
80 90 100
4.5
8 10 15 20 40 50 60 70
25C
TA = 25C
75C
Typical Application
for PNP BRTs
LOAD
0.1
10
20
30
40
50
2760
MOTOROLA
MUN5211DW1T1
SERIES
NPN Silicon Surface Mount Transistors with


individual components by integrating them into a single device. In the
MUN5211DW1T1 series, two BRT devices are housed in the SOT363
package which is ideal for low power surface mount applications where board
space is at a premium.
5
4

SOT363

Reduces Board Space
(3)
(2)
R1
(1)
R2
Q1
Q2
R2
(4)
R1
(5)
(6)
MAXIMUM RATINGS (TA = 25C unless otherwise noted, common for Q1 and Q2)
Rating
Collector Current
Symbol
Value
Unit
VCBO
VCEO
50
Vdc
50
Vdc
IC
100
mAdc
RJA
833
C/W
TJ, Tstg
PD
65 to +150
*150
mW

Device
MUN5211DW1T1
MUN5212DW1T1
MUN5213DW1T1
MUN5214DW1T1
MUN5215DW1T1(2)
MUN5216DW1T1(2)
MUN5230DW1T1(2)
MUN5231DW1T1(2)
MUN5232DW1T1(2)
MUN5233DW1T1(2)
MUN5234DW1T1(2)
MUN5235DW1T1(2)
Marking
R1 (K)
R2 (K)
7A
7B
7C
7D
7E
7F
7G
7H
7J
7K
7L
7M
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
10
22
47
47
1.0
2.2
4.7
47
47
47
REV 2
2761
MUN5211DW1T1 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, common for Q1 and Q2)
Characteristic
Symbol
Min
Typ
Max
Unit
ICBO
100
nAdc
ICEO
500
nAdc

(VEB = 6.0 V, IC = 0)
IEBO
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
mAdc
V(BR)CBO
50
Vdc
V(BR)CEO
50
Vdc
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
60
100
140
140
350
350
5.0
15
30
200
150
140
VCE(sat)
0.25
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
OFF CHARACTERISTICS
MUN5211DW1T1
MUN5212DW1T1
MUN5213DW1T1
MUN5214DW1T1
MUN5215DW1T1
MUN5216DW1T1
MUN5230DW1T1
MUN5231DW1T1
MUN5232DW1T1
MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
MUN5211DW1T1
MUN5212DW1T1
MUN5213DW1T1
MUN5214DW1T1
MUN5215DW1T1
MUN5216DW1T1
MUN5230DW1T1
MUN5231DW1T1
MUN5232DW1T1
MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1

Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k)
VOL
MUN5211lDW1T1
MUN5212DW1T1
MUN5214DW1T1
MUN5215DW1T1
MUN5216DW1T1
MUN5230DW1T1
MUN5231DW1T1
MUN5232DW1T1
MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1
MUN5213DW1T1
Vdc
Vdc
2762
MUN5211DW1T1 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, common for Q1 and Q2) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
VOH
4.9
Vdc
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
R1/R2
0.8
0.17
0.8
0.055
0.38
0.038
1.0
0.21
1.0
0.1
0.47
0.047
1.2
0.25
1.2
0.185
0.56
0.056

(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k)
MUN5230DW1T1
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k)
MUN5215DW1T1
MUN5216DW1T1
MUN5233DW1T1
Input Resistor
MUN5211DW1T1
MUN5212DW1T1
MUN5213DW1T1
MUN5214DW1T1
MUN5215DW1T1
MUN5216DW1T1
MUN5230DW1T1
MUN5231DW1T1
MUN5232DW1T1
MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1

MUN5214DW1T1
MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1
250
200
150
100
50
0
50
RJA = 833C/W
0
50
100
150
2763
MUN5211DW1T1 SERIES
1000
IC/IB = 10
TA = 25C
25C
0.1
75C
0.01
0.001
20
40
VCE = 10 V
TA = 75C
25C
25C
100
10
50
10
100
25C
75C
f = 1 MHz
IE = 0 V
TA = 25C
100
TA = 25C
10
0.1
0.01
10
20
30
40
50
VO = 5 V
0.001
3
4
5
6
7
10
10
VO = 0.2 V
TA = 25C
25C
75C
0.1
10
40
20
30
50
2764
MUN5211DW1T1 SERIES
1000
1
IC/IB = 10
25C
TA = 25C
0.1
75C
0.01
TA = 75C
25C
25C
100
10
0.001
0
20
40
50
100
10
100
f = 1 MHz
IE = 0 V
TA = 25C
VCE = 10 V
75C
25C
TA = 25C
10
0.1
0.01
VO = 5 V
10
20
30
40
50
0.001
4
6
10
100
VO = 0.2 V
TA = 25C
10
25C
75C
0.1
10
20
30
40
50
2765
MUN5211DW1T1 SERIES
10
1000
IC/IB = 10
1
25C
TA = 25C
75C
0.1
0.01
0
TA = 75C
25C
25C
100
10
50
20
40
VCE = 10 V
10
100
f = 1 MHz
IE = 0 V
TA = 25C
0.6
0.4
TA = 25C
10
0.1
0.01
0.2
25C
75C
0.8
100
10
20
30
40
VO = 5 V
0.001
50
4
6
10
100
VO = 0.2 V
TA = 25C
10
25C
75C
0.1
0
10
20
30
40
50
2766
MUN5211DW1T1 SERIES
300
1
IC/IB = 10
TA = 25C
25C
0.1
75C
0.01
0.001
20
40
60
25C
200
25C
150
100
50
0
80
TA = 75C
VCE = 10
250
100
f = 1 MHz
lE = 0 V
TA = 25C
TA = 75C
3.5
90 100
2.5
2
1.5
1
0.5
0
8 10 15 20 40 50 60 70 80
6 8 10 15 20 25 30 35
40
45
50
25C
25C
10
VO = 5 V
1
4
6
10
10
VO = 0.2 V
TA = 25C
25C
75C
0.1
10
20
30
40
50
2767
MUN5211DW1T1 SERIES
1000
TA = 25C
VCE = 10 V
VCE = 5.0 V
100
1.0
10
100
1000
TA = 25C
VCE = 10 V
VCE = 5.0 V
100
1.0
10
100
2768
MOTOROLA
MUN5211T1
SERIES

This new series of digital transistors is designed to replace a single device

and its external resistor bias network. The BRT (Bias Resistor Transistor)
contains a single transistor with a monolithic bias network consisting of two
resistors; a series base resistor and a base-emitter resistor. The BRT eliminates
these individual components by integrating them into a single device. The use
of a BRT can reduce both system cost and board space. The device is housed
in the SC-70/SOT-323 package which is designed for low power surface mount
applications.
NPN SILICON
BIAS RESISTOR
TRANSISTORS

Reduces Board Space
PIN3
COLLECTOR
(OUTPUT)

The SC-70/SOT-323 package can be soldered using
wave or reflow. The modified gull-winged leads absorb
thermal stress during soldering eliminating the possibility
R1
PIN1 R2
BASE
(INPUT)

Replace T1 with T3 in the Device Number to order the
13 inch/10,000 unit reel.
1
2
PIN2
EMITTER
(GROUND)

SC-70/SOT-323

Rating
Collector Current
Derate above 25C
Symbol
Value
Unit
VCBO
VCEO
50
Vdc
50
Vdc
IC
PD
100
mAdc
*150
1.2
mW
mW/C
Time in Solder Bath
RJA
TJ, Tstg
TL
833
C/W
65 to +150
260
10
C
Sec

Device
MUN5211T1
MUN5212T1
MUN5213T1
MUN5214T1
MUN5215T1(2)
MUN5216T1(2)
MUN5230T1(2)
MUN5231T1(2)
MUN5232T1(2)
MUN5233T1(2)
MUN5234T1(2)
Marking
R1 (K)
R2 (K)
8A
8B
8C
8D
8E
8F
8G
8H
8J
8K
8L
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
10
22
47
47
1.0
2.2
4.7
47
47
REV 2
2769
MUN5211T1 SERIES
Characteristic
Symbol
Min
Typ
Max
Unit
ICBO
100
nAdc
ICEO
500
nAdc

(VEB = 6.0 V, IC = 0)
IEBO
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
mAdc
V(BR)CBO
50
Vdc
V(BR)CEO
50
Vdc
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
60
100
140
140
350
350
5.0
15
30
200
150
VCE(sat)
0.25
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
OFF CHARACTERISTICS
MUN5211T1
MUN5212T1
MUN5213T1
MUN5214T1
MUN5215T1
MUN5216T1
MUN5230T1
MUN5231T1
MUN5232T1
MUN5233T1
MUN5234T1
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
MUN5211T1
MUN5212T1
MUN5213T1
MUN5214T1
MUN5215T1
MUN5216T1
MUN5230T1
MUN5231T1
MUN5232T1
MUN5233T1
MUN5234T1

Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k)
VOL
MUN5211lT1
MUN5212T1
MUN5214T1
MUN5215T1
MUN5216T1
MUN5230T1
MUN5231T1
MUN5232T1
MUN5233T1
MUN5234T1
MUN5213T1
Vdc
Vdc
2770
MUN5211T1 SERIES
Characteristic
Symbol
Min
Typ
Max
Unit

(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k)
MUN5230T1
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k)
MUN5215T1
MUN5216T1
MUN5233T1
VOH
4.9
Vdc
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
R1/R2
0.8
0.17
0.8
0.055
0.38
1.0
0.21
1.0
0.1
0.47
1.2
0.25
1.2
0.185
0.56
Input Resistor
MUN5211T1
MUN5212T1
MUN5213T1
MUN5214T1
MUN5215T1
MUN5216T1
MUN5230T1
MUN5231T1
MUN5232T1
MUN5233T1
MUN5234T1
Resistor Ratio
MUN5214T1
MUN5215T1/MUN5216T1
MUN5233T1
MUN5234T1
250
200
150
100
50
0
50
RJA = 833C/W
0
50
100
150
2771
MUN5211T1 SERIES
1000
IC/IB = 10
TA = 25C
25C
0.1
75C
0.01
0.001
20
40
VCE = 10 V
TA = 75C
25C
25C
100
10
50
10
100
25C
75C
f = 1 MHz
IE = 0 V
TA = 25C
100
TA = 25C
10
0.1
0.01
10
20
30
40
50
VO = 5 V
0.001
3
4
5
6
7
10
10
VO = 0.2 V
TA = 25C
25C
75C
0.1
10
40
20
30
50
2772
MUN5211T1 SERIES
1000
1
IC/IB = 10
25C
TA = 25C
0.1
75C
0.01
TA = 75C
25C
25C
100
10
0.001
0
20
40
50
100
10
100
f = 1 MHz
IE = 0 V
TA = 25C
VCE = 10 V
75C
25C
TA = 25C
10
0.1
0.01
VO = 5 V
10
20
30
40
50
0.001
4
6
10
100
VO = 0.2 V
TA = 25C
10
25C
75C
0.1
10
20
30
40
50
2773
MUN5211T1 SERIES
10
1000
IC/IB = 10
1
25C
TA = 25C
75C
0.1
0.01
0
TA = 75C
25C
25C
100
10
50
20
40
VCE = 10 V
10
100
f = 1 MHz
IE = 0 V
TA = 25C
0.6
0.4
TA = 25C
10
0.1
0.01
0.2
25C
75C
0.8
100
10
20
30
40
VO = 5 V
0.001
50
4
6
10
100
VO = 0.2 V
TA = 25C
10
25C
75C
0.1
0
10
20
30
40
50
2774
MUN5211T1 SERIES
300
1
IC/IB = 10
TA = 25C
25C
0.1
75C
0.01
0.001
20
40
60
25C
200
25C
150
100
50
0
80
TA = 75C
VCE = 10
250
100
f = 1 MHz
lE = 0 V
TA = 25C
TA = 75C
3.5
90 100
2.5
2
1.5
1
0.5
0
8 10 15 20 40 50 60 70 80
6 8 10 15 20 25 30 35
40
45
50
25C
25C
10
VO = 5 V
1
4
6
10
10
VO = 0.2 V
TA = 25C
25C
75C
0.1
10
20
30
40
50
2775
MUN5211T1 SERIES
+12 V
ISOLATED
LOAD
FROM P OR
OTHER LOGIC
+12 V
VCC
OUT
IN
LOAD
2776
MOTOROLA
NPN and PNP Silicon Surface Mount Transistors

with Monolithic Bias Resistor Network
MUN5311DW1T1
SERIES

individual components by integrating them into a single device. In the
MUN5311DW1T1 series, two complementary BRT devices are housed in the
SOT363 package which is ideal for low power surface mount applications
5
4

SOT363

Reduces Board Space
(3)
(2)
R1
(1)
R2
Q1
Q2
R2
(4)
R1
(5)
(6)
MAXIMUM RATINGS (TA = 25C unless otherwise noted, common for Q1 and Q2, minus sign for Q2 (PNP) omitted)
Rating
Collector Current
Symbol
Value
Unit
VCBO
VCEO
50
Vdc
50
Vdc
IC
100
mAdc
RJA
833
C/W
TJ, Tstg
PD
65 to +150
*150
mW

Device
MUN5311DW1T1
MUN5312DW1T1
MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1(2)
MUN5316DW1T1(2)
MUN5330DW1T1(2)
MUN5331DW1T1(2)
MUN5332DW1T1(2)
MUN5333DW1T1(2)
MUN5334DW1T1(2)
MUN5335DW1T1(2)
Marking
R1 (K)
R2 (K)
11
12
13
14
15
16
30
31
32
33
34
35
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
10
22
47
47
1.0
2.2
4.7
47
47
47
REV 4
2777
MUN5311DW1T1 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, common for Q1 and Q2, minus sign for Q2 (PNP) omitted)
Characteristic
Symbol
Min
Typ
Max
Unit
ICBO
100
nAdc
ICEO
500
nAdc

(VEB = 6.0 V, IC = 0)
IEBO
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
mAdc
V(BR)CBO
50
Vdc
V(BR)CEO
50
Vdc
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
60
100
140
140
350
350
5.0
15
30
200
150
140
VCE(sat)
0.25
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
OFF CHARACTERISTICS
MUN5311DW1T1
MUN5312DW1T1
MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
MUN5311DW1T1
MUN5312DW1T1
MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1

Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k)
VOL
MUN5311lDW1T1
MUN5312DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
MUN5313DW1T1
Vdc
Vdc
2778
MUN5311DW1T1 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, common for Q1 and Q2, minus sign for Q2 (PNP) omitted)
(Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
VOH
4.9
Vdc
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
R1/R2
0.8
0.17
0.8
0.055
0.38
0.038
1.0
0.21
1.0
0.1
0.47
0.047
1.2
0.25
1.2
0.185
0.56
0.056

(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k)
MUN5330DW1T1
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k)
MUN5315DW1T1
MUN5316DW1T1
MUN5333DW1T1
Input Resistor
MUN5311DW1T1
MUN5312DW1T1
MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1

MUN5314DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
250
200
150
100
50
0
50
RJA = 833C/W
0
50
100
150
2779
MUN5311DW1T1 SERIES
1000
IC/IB = 10
TYPICAL ELECTRICAL CHARACTERISTICS MUN5311DW1T1 NPN TRANSISTOR
TA = 25C
25C
0.1
75C
0.01
0.001
20
40
VCE = 10 V
TA = 75C
25C
25C
100
10
50
10
100
25C
75C
f = 1 MHz
IE = 0 V
TA = 25C
100
TA = 25C
10
0.1
0.01
10
20
30
40
50
VO = 5 V
0.001
3
4
5
6
7
10
10
VO = 0.2 V
TA = 25C
25C
75C
0.1
10
40
20
30
50
2780
MUN5311DW1T1 SERIES
1000
1
TYPICAL ELECTRICAL CHARACTERISTICS MUN5311DW1T1 PNP TRANSISTOR
IC/IB = 10
TA = 25C
0.1
25C
75C
0.01
0
20
100
25C
10
50
100
50
10
20
30
40
100
25C
75C
f = 1 MHz
lE = 0 V
TA = 25C
TA = 75C
25C
10
40
VCE = 10 V
TA = 25C
10
0.1
0.01
0.001
VO = 5 V
0
6
7
3
4
5
10
Figure 10. Output Current versus Input

Voltage
100
VO = 0.2 V
TA = 25C
10
25C
75C
0.1
10
20
30
40
50
2781
MUN5311DW1T1 SERIES
1000
1
IC/IB = 10
25C
TA = 25C
0.1
75C
0.01
TA = 75C
25C
25C
100
10
0.001
0
20
40
50
100
10
100
f = 1 MHz
IE = 0 V
TA = 25C
VCE = 10 V
75C
25C
TA = 25C
10
0.1
0.01
VO = 5 V
10
20
30
40
50
0.001
4
6
10
100
VO = 0.2 V
TA = 25C
10
25C
75C
0.1
10
20
30
40
50
Figure 16. Input Voltage versus Output

Current
2782
MUN5311DW1T1 SERIES
1000
10
IC/IB = 10
25C
TA = 25C
75C
0.1
0.01
VCE = 10 V
TA = 75C
25C
25C
100
10
0
20
40
50
10
100
25C
75C
f = 1 MHz
lE = 0 V
TA = 25C
TA = 25C
100
0.1
0.01
0.001
50
10
20
30
40
10
VO = 5 V
0
3
4
5
6
7
10
100
VO = 0.2 V
TA = 25C
10
25C
75C
0.1
10
20
30
40
50
2783
MUN5311DW1T1 SERIES
10
1000
IC/IB = 10
1
25C
TA = 25C
75C
0.1
0.01
0
TA = 75C
25C
25C
100
10
50
20
40
VCE = 10 V
10
100
f = 1 MHz
IE = 0 V
TA = 25C
0.6
0.4
TA = 25C
10
0.1
0.01
0.2
25C
75C
0.8
100
10
20
30
40
VO = 5 V
0.001
50
4
6
10
100
VO = 0.2 V
TA = 25C
10
25C
75C
0.1
0
10
20
30
40
50
2784
MUN5311DW1T1 SERIES
1000
IC/IB = 10
TA = 25C
25C
75C
0.1
0.01
10
20
30
TA = 75C
25C
25C
100
10
40
10
100
f = 1 MHz
lE = 0 V
TA = 25C
0.8
0.6
0.4
0.2
100
25C
10
1
0.1
0.01
0.001
50
10
20
30
40
25C
TA = 75C
VO = 5 V
0
3
4
5
6
7
10
100
VO = 0.2 V
TA = 25C
25C
75C
10
0.1
10
20
30
40
50
2785
MUN5311DW1T1 SERIES
300
1
IC/IB = 10
TA = 25C
25C
0.1
75C
0.01
0.001
20
40
60
25C
200
25C
150
100
50
0
80
TA = 75C
VCE = 10
250
100
f = 1 MHz
lE = 0 V
TA = 25C
TA = 75C
3.5
90 100
2.5
2
1.5
1
0.5
0
8 10 15 20 40 50 60 70 80
6 8 10 15 20 25 30 35
40
45
50
25C
25C
10
VO = 5 V
1
4
6
10
10
VO = 0.2 V
TA = 25C
25C
75C
0.1
10
20
30
40
50
2786
MUN5311DW1T1 SERIES
180
IC/IB = 10
TA = 25C
25C
0.1
75C
0.01
0.001
20
40
60
25C
140
25C
120
100
80
60
40
20
0
80
TA = 75C
VCE = 10 V
160
100
TA = 75C
3.5
f = 1 MHz
lE = 0 V
TA = 25C
4
80 90 100
4.5
3
2.5
2
1.5
1
0.5
0
8 10 15 20 40 50 60 70
6 8 10 15 20 25 30 35 40
45
50
25C
25C
10
VO = 5 V
1
4
6
10
10
VO = 0.2 V
25C
TA = 25C
75C
0.1
10
20
30
40
50
2787
MUN5311DW1T1 SERIES
1000
1000
TA = 25C
VCE = 10 V
VCE = 5.0 V
100
TA = 25C
VCE = 10 V
VCE = 5.0 V
100
1.0
10
100
1.0
Figure 42. DC Current Gain PNP
10
100
Figure 43. DC Current Gain NPN
1000
1000
TA = 25C
VCE = 10 V
VCE = 5.0 V
100
VCE = 10 V
VCE = 5.0 V
100
1.0
10
Figure 44. DC Current Gain PNP
2788
TA = 25C
100
1.0
10
100
Figure 45. DC Current Gain NPN
MOTOROLA
P2N2222A
NPN Silicon
COLLECTOR
1
2
BASE
3
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
40
Vdc
VCBO
75
Vdc
VEBO
6.0
Vdc
IC
600
mAdc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
Watts
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit

Temperature Range
1
2
CASE 2904, STYLE 17

TO92 (TO226AA)
Characteristic
RqJA
200
C/W
RqJC
83.3
C/W

Symbol
Min
Max
Unit

(IC = 10 mAdc, IB = 0)
V(BR)CEO
40
Vdc

(IC = 10 mAdc, IE = 0)
V(BR)CBO
75
Vdc

(IE = 10 mAdc, IC = 0)
V(BR)EBO
6.0
Vdc

ICEX
10
nAdc

(VCB = 60 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0, TA = 150C)
ICBO
0.01
10

(VEB = 3.0 Vdc, IC = 0)
IEBO
10
nAdc

(VCE = 10 V)
ICEO
10
nAdc
Base Cutoff Current

IBEX
20
nAdc
Characteristic
OFF CHARACTERISTICS
Adc
2789
P2N2222A
Characteristic
Symbol
Min
Max
Unit
35
50
75
35
100
50
40
300
0.3
1.0
0.6
1.2
2.0
fT
300
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
8.0
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
25
pF
2.0
0.25
8.0
1.25
8.0
4.0
50
75
300
375
5.0
25
35
200
ON CHARACTERISTICS
DC Current Gain
(IC = 150 mAdc, VCE = 10 Vdc)(1)
(IC = 150 mAdc, VCE = 1.0 Vdc)(1)
(IC = 500 mAdc, VCE = 10 Vdc)(1)
hFE

VCE(sat)

VBE(sat)
Vdc
Vdc

Input Impedance
hie

hre

hfe
Output Admittance
hoe

rbCc
150
ps
NF
4.0
dB
( CC = 30 Vdc, VBE(off) = 2.0 Vdc,

(V
IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1)
td
10
ns
tr
25
ns

Ad ) (Fi
(Figure 2)
ts
225
ns
tf
60
ns
Noise Figure
X 10 4
mmhos
Delay Time
Rise Time
Storage Time
Fall Time

300 ms, Duty Cycle
2.0%.
2790
P2N2222A
+ 30 V
+ 30 V
1.0 to 100 s,
DUTY CYCLE 2.0%
+16 V
0
2 V
200
1.0 to 100 s,
DUTY CYCLE 2.0%
+16 V
0
1 k
< 2 ns
1k
14 V
CS* < 10 pF
< 20 ns
CS* < 10 pF
1N914

*Total shunt capacitance of test jig,
connectors, and oscilloscope.
4 V
1000
700
500
200
TJ = 125C
300
200
25C
100
70
50
55C
30
VCE = 1.0 V
VCE = 10 V
20
10
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
20 30
50
70
100
200
300
500 700 1.0 k
1.0
TJ = 25C
0.8
0.6
IC = 1.0 mA
10 mA
150 mA
500 mA
0.4
0.2
0
0.005
0.01
0.02 0.03
0.05
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
20
30
50
2791
P2N2222A
200
500
IC/IB = 10
TJ = 25C
tr @ VCC = 30 V
td @ VEB(off) = 0
30
20
10
7.0
5.0
200
ts = ts 1/8 tf
100
70
50
tf
30
20
10
7.0
5.0
3.0
2.0
5.0 7.0
10
200 300
20 30
50 70 100
5.0 7.0 10
500
20 30
50 70 100
200
IC = 1.0 mA, RS = 150

500 A, RS = 200
100 A, RS = 2.0 k
50 A, RS = 4.0 k
6.0
f = 1.0 kHz
8.0
RS = OPTIMUM
RS = SOURCE
RS = RESISTANCE
4.0
2.0
IC = 50 A
100 A
500 A
1.0 mA
6.0
4.0
2.0
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
20
100 200
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 k 100 k
Ceb
10
7.0
5.0
Ccb
3.0
0.5 0.7 1.0

2.0 3.0 5.0 7.0 10
20 30
50
f, FREQUENCY (kHz)
20
0.2 0.3
0
50
50 100
30
CAPACITANCE (pF)
500
10
8.0
2792
300
10
2.0
0.1
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25C
300
t, TIME (ns)
t, TIME (ns)
100
70
50
500
VCE = 20 V
TJ = 25C
300
200
100
70
50
1.0
2.0
3.0
5.0 7.0 10
20 30
50
70 100
P2N2222A
1.0
+0.5
TJ = 25C
0
COEFFICIENT (mV/ C)
V, VOLTAGE (VOLTS)
0.8
1.0 V
0.6
0.4
0.2
RqVC for VCE(sat)
0.5
1.0
1.5
RqVB for VBE
2.0
2.5
0.1 0.2
50 100 200
0.5 1.0 2.0 5.0 10 20
500 1.0 k
0.1 0.2
0.5
1.0 2.0
5.0 10 20
50 100 200
500
2793
MOTOROLA
P2N2907A
PNP Silicon
COLLECTOR
1
2
BASE
3
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
60
Vdc
VCBO
60
Vdc
VEBO
5.0
Vdc
IC
600
mAdc

Derate above 25C
PD
625
5.0
mW
mW/C

Derate above 25C
PD
1.5
12
Watts
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit

Temperature Range
1
2
CASE 2904, STYLE 17

TO92 (TO226AA)
Characteristic
RqJA
200
C/W
RqJC
83.3
C/W

Symbol
Min
Max
Unit

(IC = 10 mAdc, IB = 0)
V(BR)CEO
60
Vdc

(IC = 10 mAdc, IE = 0)
V(BR)CBO
60
Vdc

(IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
Vdc

ICEX
50
nAdc

(VCB = 50 Vdc, IE = 0)
(VCB = 50 Vdc, IE = 0, TA = 150C)
ICBO
0.01
10

(VEB = 3.0 Vdc)
IEBO
10
nAdc

(VCE = 10 V)
ICEO
10
nAdc
Base Cutoff Current

IBEX
50
nAdc
Characteristic
OFF CHARACTERISTICS
2794
Adc

P2N2907A
Characteristic
Symbol
Min
Max
Unit
75
100
100
100
50
300
0.4
1.6
1.3
2.6
fT
200
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
8.0
pF
Input Capacitance
(VEB = 2.0 Vdc, IC = 0, f = 1.0 MHz)
Cibo
30
pF
ton
50
ns
td
10
ns
tr
40
ns
toff
110
ns
ts
80
ns
tf
30
ns
ON CHARACTERISTICS
DC Current Gain
(IC = 150 mAdc, VCE = 10 Vdc)(1)
(IC = 500 mAdc, VCE = 10 Vdc)(1)
hFE

VCE(sat)

VBE(sat)
Vdc
Vdc

Current Gain Bandwidth Product(1), (2)
TurnOn Time
Delay Time
(VCC = 30
30 Vdc,
Vd IC = 150
150 mAdc,
Ad
IB1 = 15
15 mAdc) (Figures 1 and 5)
Rise Time
TurnOff Time
Storage Time
Fall Time
(VCC = 6.0
6 0 Vd
Vdc, IC = 150
150 mAdc,
Ad
IB1 = IB2 = 15
15 mAdc) (Figure 2)

300 ms, Duty Cycle
2.0%.
INPUT
Zo = 50
PRF = 150 PPS
RISE TIME 2.0 ns
P.W. < 200 ns
30 V
200
1.0 k
TO OSCILLOSCOPE
RISE TIME 5.0 ns
50
16 V
INPUT
Zo = 50
PRF = 150 PPS
RISE TIME 2.0 ns
P.W. < 200 ns
200 ns
+15 V
6.0 V
1.0 k
1.0 k
0
30 V
50
37
TO OSCILLOSCOPE
RISE TIME 5.0 ns
1N916
200 ns
2795
P2N2907A
3.0
VCE = 1.0 V
VCE = 10 V
2.0
TJ = 125C
25C
1.0
55C
0.7
0.5
0.3
0.2
0.1
0.2 0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
50 70 100
200 300
500
1.0
0.8
IC = 1.0 mA
10 mA
100 mA
500 mA
0.6
0.4
0.2
0
0.005
0.01
0.02 0.03 0.05 0.07 0.1
0.2
0.3 0.5 0.7 1.0

3.0
2.0
5.0 7.0 10
20 30
50
500
tr
100
70
50
30
20
td @ VBE(off) = 0 V
7.0
5.0
3.0
5.0 7.0 10
2.0 V
20 30
50 70 100
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25C
200
tf
100
70
50
30
ts = ts 1/8 tf
20
10
2796
300
VCC = 30 V
IC/IB = 10
TJ = 25C
t, TIME (ns)
t, TIME (ns)
300
200
200 300 500
10
7.0
5.0
5.0 7.0 10
20 30
50 70 100
200 300 500
P2N2907A
NOISE FIGURE
10
10
8.0
8.0
IC = 1.0 mA, Rs = 430

500 A, Rs = 560
50 A, Rs = 2.7 k
100 A, Rs = 1.6 k
6.0
4.0
2.0
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
20
50
C, CAPACITANCE (pF)
50
100
200
500 1.0 k 2.0 k
5.0 k 10 k
20 k
f, FREQUENCY (kHz)
20
Ceb
10
7.0
5.0
Ccb
3.0
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
20 30
50 k
400
300
200
100
80
VCE = 20 V
TJ = 25C
60
40
30
20
1.0 2.0
5.0
10
20
50
100 200
500 1000
+0.5
1.0
TJ = 25C
0.6
COEFFICIENT (mV/ C)
0.8
V, VOLTAGE (VOLTS)
IC = 50 A
100 A
500 A
1.0 mA
4.0
100
30
2.0
0.1
6.0
2.0
f = 1.0 kHz
0.4
0.2
RqVC for VCE(sat)

0.5
1.0
1.5
RqVB for VBE
2.0
0
0.1 0.2
0.5 1.0 2.0 5.0 10 20
50 100 200
500
2.5
0.1 0.2 0.5 1.0 2.0
5.0 10 20
50 100 200 500
2797
MOTOROLA
NPN Silicon Planar

PZT651T1
This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer
applications. The device is housed in the SOT223 package which is designed for
SOT223 PACKAGE
HIGH CURRENT
NPN SILICON
TRANSISTOR
SURFACE MOUNT

The SOT223 package can be soldered using wave or reflow.
SOT223 package ensures level mounting, resulting in improved thermal
leads absorb thermal stress during soldering, eliminating the possibility
Use PZT651T1 to order the 7 inch/1000 unit reel
Use PZT651T3 to order the 13 inch/4000 unit reel
PNP Complement is PZT751T1
COLLECTOR 2,4
1
2
3
BASE
1
CASE 318E04, STYLE 1

TO261AA
EMITTER 3

Symbol
Value
Unit
VCEO
60
Vdc
VCBO
80
Vdc
EmitterBase Voltage
VEBO
5.0
Vdc
Collector Current
IC
2.0
Adc

Derate above 25C
PD
0.8
6.4
Watts
mW/C
Tstg
65 to 150
TJ
150
Symbol
Max
Unit
RJA
156
C/W
TL
260
10
C
Sec
Rating
DEVICE MARKING
651
Characteristic
Thermal Resistance from JunctiontoAmbient in Free Air
Time in Solder Bath
1. Device mounted on a FR4 glass epoxy printed circuit board using minimum recommended footprint.
REV 1
2798
PZT651T1
Characteristics
Symbol
Min
Max
Unit

(IC = 10 mAdc, IB = 0)
V(BR)CEO
60
Vdc

(IC = 100 Adc, IE = 0)
V(BR)CBO
80
Vdc

(IE = 10 Adc, IC = 0)
V(BR)EBO
5.0
Vdc
BaseEmitter Cutoff Current

(VEB = 4.0 Vdc)
IEBO
0.1
Adc

(VCB = 80 Vdc, IE = 0)
ICBO
100
nAdc
75
75
75
40
0.5
0.3
OFF CHARACTERISTICS
DC Current Gain
(IC = 1.0 Adc, VCE = 2.0 Vdc)
(IC = 2.0 Adc, VCE = 2.0 Vdc)
hFE
CollectorEmitter Saturation Voltages

(IC = 2.0 Adc, IB = 200 mAdc)
(IC = 1.0 Adc, IB = 100 mAdc)
VCE(sat)
BaseEmitter Voltages
(IC = 1.0 Adc, VCE = 2.0 Vdc)
VBE(on)
1.0
Vdc

(IC = 1.0 Adc, IB = 100 mAdc)
VBE(sat)
1.2
Vdc
fT
75
MHz
CurrentGain Bandwidth
Vdc
2. Pulse Test: Pulse Width 300 s, Duty Cycle = 2.0%
2799
MOTOROLA
PZT751T1
PNP Silicon Planar

This PNP Silicon Epitaxial transistor is designed for use in industrial and consumer
applications. The device is housed in the SOT223 package which is designed for
The SOT223 Package can be soldered using wave or reflow.
SOT223 PACKAGE
HIGH CURRENT
PNP SILICON
TRANSISTOR
SURFACE MOUNT

damage to the die
COLLECTOR 2, 4

Use PZT751T1 to order the 7 inch/1000 unit reel.
Use PZT751T3 to order the 13 inch/4000 unit reel.
BASE
1
NPN Complement is PZT651T1
2
3

TO-261AA
EMITTER 3

Rating
Symbol
Value
Unit
VCEO
60
Vdc
VCBO
80
Vdc
EmitterBase Voltage
VEBO
5.0
Vdc
Collector Current
IC
2.0
Adc

Derate above 25C
PD
0.8
6.4
Watts
mW/C
Tstg
65 to 150
TJ
150
RJA
156
C/W
TL
260
10
C
Sec
DEVICE MARKING
ZT751
Thermal Resistance from JunctiontoAmbient in Free Air
Time in Solder Bath
REV 1
2800
PZT751T1
Symbol
Min
Max
Unit

(IC = 10 mAdc, IB = 0)
V(BR)CEO
60
Vdc

(IC = 100 Adc, IE = 0)
V(BR)CBO
80
Vdc

(IE = 10 Adc, IC = 0)
V(BR)EBO
5.0
Vdc
BaseEmitter Cutoff Current

(VEB = 4.0 Vdc)
IEBO
0.1
Adc

(VCB = 80 Vdc, IE = 0)
ICBO
100
nAdc
75
75
75
40
0.5
0.3
Characteristics
OFF CHARACTERISTICS
DC Current Gain
(IC = 1.0 Adc, VCE = 2.0 Vdc)
(IC = 2.0 Adc, VCE = 2.0 Vdc)
hFE
CollectorEmitter Saturation Voltages

(IC = 2.0 Adc, IB = 200 mAdc)
(IC = 1.0 Adc, IB = 100 mAdc)
VCE(sat)
BaseEmitter Voltages
(IC = 1.0 Adc, VCE = 2.0 Vdc)
VBE(on)
1.0
Vdc

(IC = 1.0 Adc, IB = 100 mAdc)
VBE(sat)
1.2
Vdc
fT
75
MHz
CurrentGainBandwidth
Vdc
2. Pulse Test: Pulse Width 300 s, Duty Cycle = 2.0%.
2801
MOTOROLA
NPN Silicon Planar

PZT2222AT1
This NPN Silicon Epitaxial transistor is designed for use in linear and switching
SOT-223 PACKAGE
NPN SILICON
TRANSISTOR
SURFACE MOUNT
PNP Complement is PZT2907AT1

The SOT-223 package can be soldered using wave or reflow.
damage to the die.
Available in 12 mm tape and reel
Use PZT2222AT1 to order the 7 inch/1000 unit reel.
COLLECTOR
2, 4
BASE
1
2
3

TO-261AA
3
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
40
Vdc
VCBO
75
Vdc
VEBO
6.0
Vdc
Collector Current
IC
600
mAdc
Total Power Dissipation up to TA = 25C(1)
PD
1.5
Watts
Tstg
65 to +150
TJ
150
RJA
83.3
C/W
TL
260
10
C
Sec
Thermal Resistance from Junction to Ambient
Time in Solder Bath
DEVICE MARKING
P1F

Characteristic
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
V(BR)CEO
40
Vdc
V(BR)CBO
75
Vdc
OFF CHARACTERISTICS
V(BR)EBO
6.0
Vdc
Base-Emitter Cutoff Current (VCE = 60 Vdc, VBE = 3.0 Vdc)
IBEX
20
nAdc
Collector-Emitter Cutoff Current (VCE = 60 Vdc, VBE = 3.0 Vdc)
ICEX
10
nAdc
IEBO
100
nAdc
1. Device mounted on an epoxy printed circuit board 1.575 inches x 1.575 inches x 0.059 inches; mounting pad for the collector lead min. 0.93 inches2.
REV 2
2802
PZT2222AT1
ELECTRICAL CHARACTERISTICS continued (TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
10
10
nAdc
Adc
35
50
70
35
100
50
40
300
0.3
1.0
0.6
1.2
2.0
2.0
0.25
8.0
1.25
8.0x10-4
4.0x10-4
50
75
300
375
5.0
25
35
200
4.0
dB

fT
300
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cc
8.0
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Ce
25
pF

IB(on)
mAdc, VEB(off)
0.5
5 Vdc)
B( ) = 15 mAdc
EB( ff) = 0
Figure 1
td
10
ns
tr
25

IB(on)
B( ) = IB(
B(off)
ff) = 15 mAdc)
Figure 2
ts
225
tf
60
OFF CHARACTERISTICS (continued)

(VCB = 60 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0, TA = 125C)
ICBO
ON CHARACTERISTICS
DC Current Gain
hFE
Collector-Emitter Saturation Voltages

VCE(sat)
Base-Emitter Saturation Voltages

VBE(sat)
Input Impedance
hie

hre
Small-Signal Current Gain

Output Admittance
Noise Figure (VCE = 10 Vdc, IC = 100 Adc, f = 1.0 kHz)
hfe
Vdc
Vdc
hoe
mhos
SWITCHING TIMES (TA = 25C)

Delay Time
Rise Time
Storage Time
Fall Time
ns
2803
PZT2222AT1
VCC
Vi
R2
90%
Vo
R1
10%
0
tr
Vi
D.U.T.
tp
Figure 1. Input Waveform and Test Circuit for Determining Delay Time and Rise Time
Vi = 0.5 V to +9.9 V, VCC = +30 V, R1 = 619 , R2 = 200 .
PULSE GENERATOR:
PULSE DURATION
RISE TIME
DUTY FACTOR
tp
tr
=
200 ns
2 ns
0.02
OSCILLOSCOPE:
INPUT IMPEDANCE
INPUT CAPACITANCE
RISE TIME
Zi
Ci
tr
> 100 k
<
12 pF
<
5 ns
VCC
Vi
+16.2 V
R2
R1
0
TIME
D.U.T.
R3
Vi
Vo
OSCILLOSCOPE
D1
R4
13.8 V
tf
100 s
VBB
Figure 2. Input Waveform and Test Circuit for Determining Storage Time and Fall Time
2804
MOTOROLA
PNP Silicon
PZT2907AT1
This PNP Silicon Epitaxial transistor is designed for use in linear and
switching applications. The device is housed in the SOT-223 package which is
designed for medium power surface mount applications.
SOT-223 PACKAGE
PNP SILICON
TRANSISTOR
SURFACE MOUNT
NPN Complement is PZT2222AT1

The SOT-223 package can be soldered using wave or reflow
leads absorb thermal stress during soldering eliminating the possibility of
damage to the die.
COLLECTOR
Available in 12 mm tape and reel
2,4
4
1
BASE 1
2
3

TO-261AA
3
EMITTER

Rating
Symbol
Value
Unit
VCEO
60
Vdc
VCBO
60
Vdc
VEBO
5.0
Vdc
Collector Current
IC
600
mAdc

Derate above 25C
PD
1.5
12
Watts
mW/C
TJ, Tstg
65 to 150
RJA
83.3
C/W
TL
260
10
C
Sec
Time in Solder Bath
DEVICE MARKING
P2F

Symbol
Min
Typ
Max
Unit
V(BR)CBO
60
Vdc
Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
V(BR)CEO
60
Vdc
V(BR)EBO
5.0
Vdc
ICBO
10
nAdc
Collector-Emitter Cutoff Current (VCE = 30 Vdc, VBE = 0.5 Vdc)
ICEX
50
nAdc
Base-Emitter Cutoff Current (VCE = 30 Vdc, VBE = 0.5 Vdc)
IBEX
50
nAdc
Characteristic
OFF CHARACTERISTICS
REV 4
2805
PZT2907AT1
Characteristic
Symbol
Min
Typ
Max
75
100
100
100
50
300
0.4
1.6
1.3
2.6
Unit
DC Current Gain
hFE
Collector-Emitter Saturation Voltages

VCE(sat)
Base-Emitter Saturation Voltages

VBE(sat)
Vdc
Vdc
Current-Gain Bandwidth Product (IC = 50 mAdc, VCE = 20 Vdc, f = 100 MHz)
fT
200
MHz
Cc
8.0
pF
Ce
30
pF
ton
45
ns
td
10
tr
40
toff
100
ts
80
tf
30
SWITCHING TIMES
Turn-On Time
Vd IC = 150
150 mAdc,
Ad
(VCC = 30 Vdc,
IB1 = 15
15 mAdc)
Delay Time
Rise Time
Turn-Off Time
(VCC = 6.0
6 0 Vdc,
Vd IC = 150
150 mAdc,
Ad
IB1 = IB2 = 15
15 mAdc)
Storage Time
Fall Time
ns
2. Pulse Test: Pulse Width 300 s, Duty Cycle = 2.0%.
30 V
INPUT
Zo = 50
PRF = 150 Hz
RISE TIME 2.0 ns
1.0 k
50
200 ns
TO OSCILLOSCOPE
RISE TIME 5.0 ns
6.0 V
1.0 k
37
TO OSCILLOSCOPE
RISE TIME 5.0 ns
1.0 k
0
30 V
50
1N916
200 ns
Figure 1. Delay and Rise

Time Test Circuit
2806
INPUT
Zo = 50
PRF = 150 Hz
RISE TIME 2.0 ns
200
0
16 V
+15 V
Figure 2. Storage and Fall

Time Test Circuit
PZT2907AT1
1000
hFE, CURRENT GAIN
TJ = 125C
TJ = 25C
100
TJ = 55C
10
0.1
1.0
10
100
1000
f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
1000
100
VCE = 20 V
TJ = 25C
10
1.0
10
100
1000
1.0
30
TJ = 25C
0.6
20
Ceb
CAPACITANCE (pF)
VOLTAGE (VOLTS)
0.8
0.4
0.2
7.0
Ccb
5.0
3.0
0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
10
500
2.0
0.1
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30

2807
MOTOROLA
PZTA14T1
NPN SmallSignal
This NPN small signal darlington transistor is designed for use in switching
applications, such as print hammer, relay, solenoid and lamp drivers. The
device is housed in the SOT-223 package, which is designed for medium power
surface mount applications.
SOT223 PACKAGE
MEDIUM POWER
NPN SILICON
DARLINGTON
TRANSISTOR
SURFACE MOUNT
High fT : 125 MHz Minimum

damage to the die.
COLLECTOR 2, 4

Use PZTA14T1 to order the 7 inch/1000 unit reel
Use PZTA14T3 to order the 13 inch/4000 unit reel
1
2
BASE
1
The PNP Complement is PZTA64T1
EMITTER 3

TO-261AA

Rating
Symbol
Value
Unit
VCES
30
Vdc
VCEO
30
Vdc
VEBO
10
Vdc
IC
300
mAdc
Collector Current
PD
1.5
Watts
TJ, Tstg
65 to 150
RJA
83.3
C/W
TL
260
10
C
Sec
DEVICE MARKING
P1N
Thermal Resistance
Junction-to-Ambient (surface mounted)
Time in Solder Bath
REV 1
2808
PZTA14T1
Symbol
Min
Typ
Max
Unit

(IC = 100 Adc, IE = 0)
V(BR)CBO
30
Vdc

(IC = 100 Adc, IB = 0)
V(BR)CES
30
Vdc

(IE = 10 Adc, IC = 0)
V(BR)EBO
10
Vdc

(VCB = 30 Vdc, IE = 0)
ICBO
0.1
Adc

(VEB = 10 Vdc, IC = 0)
IEBO
0.1
Adc
10,000
20,000
Characteristics
OFF CHARACTERISTICS
DC Current Gain
hFE

VCE(sat)
1.5
Vdc
VBE(on)
2.0
Vdc
fT
125
MHz
2809
PZTA14T1
100 k
70 k
50 k
4.0
|h FE|, SMALL-SIGNAL CURRENT GAIN
200 k
TJ = 125C
25C
30 k
20 k
10 k
7.0 k
5.0 k
55C
3.0 k
2.0 k
5.0 7.0
10
VCE = 5.0 V
20 30
50 70 100
200
300
VCE = 5.0 V
f = 100 MHz
TJ = 25C
2.0
1.0
0.8
0.6
0.4
0.2
0.5
500
1.0
1.6
2.0
0.5
10
20
50
100
200
500
20
TJ = 25C
TJ = 25C
C, CAPACITANCE (pF)
V, VOLTAGE (VOLTS)
1.4
1.2
1.0
0.8
10
7.0
Cibo
Cobo
5.0
3.0
0.6
5.0 7.0
10
20 30
50 70 100
200 300
2.0
0.04
500
0.1
RV, TEMPERATURE COEFFICIENT (mV/C)
TJ = 25C
2.5
500 mA
2.0
1.5
1.0
0.5
0.1 0.2
0.5 1.0 2.0 5.0 10 20

50 100 200
2810
1.0
2.0
4.0
10
20
40
3.0
250 mA
0.4
IC = 10 mA 50 mA
0.2
500 1000
1.0
2.0

*RVC for VCE(sat)
25C to 125C
55C to 25C
3.0
4.0
VB for VBE
5.0
6.0
5.0 7.0
25C to 125C
55C to 25C
10
20 30
50 70 100
200 300
500
MOTOROLA

Surface Mount
PZTA42T1
NPN Silicon
COLLECTOR 2,4
SOT223 PACKAGE
NPN SILICON
HIGH VOLTAGE
TRANSISTOR
SURFACE MOUNT
BASE
1
EMITTER 3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage (Open Base)
VCEO
300
Vdc
Collector-Base Voltage (Open Emitter)
VCBO
300
Vdc
VEBO
6.0
Vdc
Collector Current (DC)
IC
500
mAdc
PD
1.5
Watts
Tstg
65 to +150
TJ
150
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction-to-Ambient(1)
RJA
83.3
C/W
2
3

TO-261AA
DEVICE MARKING
P1D

Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage(2)

(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
300
Vdc

(IC = 100 Adc, IE = 0)
V(BR)CBO
300
Vdc

(IE = 100 Adc, IC = 0)
V(BR)EBO
6.0
Vdc

(VCB = 200 Vdc, IE = 0)
ICBO
0.1
Adc

(VBE = 6.0 Vdc, IC = 0)
IEBO
0.1
Adc
Characteristics
OFF CHARACTERISTICS
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min 0.93 in2.
2. Pulse Test Conditions, tp = 300 s, = 0.02.
REV 2
2811
PZTA42T1
ON CHARACTERISTICS
DC Current Gain
hFE
25
40
40
fT
50
MHz
Cre
3.0
pF

VCE(sat)
0.5
Vdc

VBE(sat)
0.9
Vdc
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
2812
MOTOROLA
PZTA64T1
PNP SmallSignal
This PNP small-signal darlington transistor is designed for use in preamplifiers

input applications or wherever it is necessary to have a high input impedance.
The device is housed in the SOT-223 package which is designed for medium
power surface mount applications.
SOT-223 PACKAGE
PNP SILICON
DARLINGTON
TRANSISTOR
SURFACE MOUNT
High fT : 125 MHz Minimum

damage to the die.
Use PZTA64T1 to order the 7 inch/1000 unit reel.
Use PZTA64T3 to order the 13 inch/4000 unit reel.
NPN Complement is PZTA14T1
COLLECTOR 2, 4
1
2
BASE
1
EMITTER 3

TO-261AA

Rating
Symbol
Value
Unit
VCES
30
Vdc
VCBO
30
Vdc
VEBO
10
Vdc
PD
1.5
Watts

Collector Current
IC
500
mAdc
TJ, Tstg
65 to +150
RJA
83.3
C/W
TL
260
10
C
Sec
DEVICE MARKING
P2V
Thermal Resistance from Junction to Ambient (surface mounted)
Time in Solder Bath
REV 4
2813
PZTA64T1
Symbol
Min
Max
Unit

(IC = 100 Adc, VBE = 0)
V(BR)CES
30
Vdc

(IC = 100 A, IE = 0)
V(BR)CBO
30
Vdc

(IE = 100 A, IC = 0)
V(BR)EBO
10
Vdc

(VBE = 10 Vdc, IC = 0)
IEBO
0.1
Adc

(VCB = 30 Vdc, IE = 0)
ICBO
0.1
Adc
10,000
20,000
Characteristic
OFF CHARACTERISTICS
DC Current Gain
hFE

VCE(sat)
1.5
Vdc
Base-Emitter On-Voltage
VBE(on)
2.0
Vdc
fT
125
MHz
2814
PZTA64T1
hFE, DC CURRENT GAIN (X1.0 K)
200
TA = 125C
100
70
50
10 V
25C
30
VCE = 2.0 V
5.0 V
20
10
7.0
5.0
55C
3.0
2.0
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
300
10
4.0
3.0
2.0
VCE = 5.0 V
f = 100 MHz
TA = 25C
1.6
V, VOLTAGE (VOLTS)
2.0
1.0
0.4
1.2
0.8 VCE(sat) @ IC/IB = 1000
IC/IB = 100
0.4
0.2
0.1
1.0
TA = 25C
2.0
5.0
10
20
50
100 200
500
0
0.3 0.5
1K
1.0
2.0 3.0 5.0 10

20 30
50 100
200 300
2.0
TA = 25C
1.8
1.6
IC = 10 mA 50 mA 100 mA
175 mA
300 mA
1.4
1.2
1.0
0.8
0.6
0.1 0.2 0.5
1.0 2.0 5.0 10 20 50 100 200 500 1K 2K

5K 10K
2815
MOTOROLA
PZTA92T1
PNP Silicon
COLLECTOR 2,4
BASE
1
EMITTER 3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
300
Vdc
VCBO
300
Vdc
EmitterBase Voltage
VEBO
5.0
Vdc
Collector Current
IC
500
mAdc
PD
1.5
Watts
Tstg
65 to +150
TJ
150
Characteristic
Symbol
Max
Unit
Thermal Resistance from Junction to Ambient(1)
RJA
83.3
C/W
SOT223 PACKAGE
PNP SILICON
HIGH VOLTAGE TRANSISTOR
SURFACE MOUNT
2
3

TO261AA
DEVICE MARKING
P2D

Characteristic
Symbol
Min
Max
Unit
V(BR)CEO
300
Vdc
V(BR)CBO
300
Vdc
OFF CHARACTERISTICS
V(BR)EBO
5.0
Vdc
ICBO
0.25
Adc
EmitterBase Cutoff Current (VBE = 3.0 Vdc, IC = 0)
IEBO
0.1
Adc
25
40
25
VCE(sat)
VBE(sat)
0.5
0.9
Ccb
6.0
pF
fT
50
MHz
ON CHARACTERISTICS
DC Current Gain(2)
hFE
Saturation Voltages
Vdc
CollectorBase Capacitance @ f = 1.0 MHz (VCB = 20 Vdc, IE = 0)
2. Pulse Test: Pulse Width 300 s; Duty Cycle = 2.0%.
REV 2
2816
MOTOROLA
PZTA96T1
PNP Silicon
COLLECTOR 2,4
BASE
1
EMITTER 3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
450
Vdc
VCBO
450
Vdc
EmitterBase Voltage
VEBO
5.0
Vdc
Collector Current
IC
500
mAdc
PD
1.5
Watts
Tstg
65 to +150
TJ
150
Characteristic
Symbol
Max
Unit
Thermal Resistance from Junction to Ambient(1)
RJA
83.3
SOT223 PACKAGE
PNP SILICON
HIGH VOLTAGE TRANSISTOR
SURFACE MOUNT
2
3

TO261AA
DEVICE MARKING
ZTA96

Characteristic
Symbol
Min
Max
Unit

(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
450
Vdc

(IC = 100 Adc, IE = 0)
V(BR)CBO
450
Vdc

(IE = 10 Adc, IC = 0)
V(BR)EBO
5.0
Vdc

(VCB = 400 Vdc, IE = 0)
ICBO
0.1
Adc

(VBE = 4.0 Vdc, IC = 0)
IEBO
0.1
Adc
hFE
50
150
VCE(sat)
VBE(sat)
0.6
1.0
OFF CHARACTERISTICS
ON CHARACTERISTICS
DC Current Gain(2)
Saturation Voltages
Vdc
2. Pulse Test: Pulse Width 300 s; Duty Cycle = 2.0%.
REV 1
2817
MOTOROLA
Advance Information
MDC3105LT1
Integrated Relay/Solenoid Driver

Optimized to Switch 3 V to 5 V Relays from a 5 V Rail
Compatible with TX and TQ Series Telecom Relays Rated up to
300 mW at 3 V to 5 V
RELAY/SOLENOID DRIVER
SILICON MONOLITHIC
CIRCUIT BLOCK
Features Low Input Drive Current

Internal Zener Clamp Routes Induced Current to Ground Rather Than Back
to Supply
Guaranteed Off State with No Input Connection
Supports Large Systems with Minimal OffState Leakage
ESD Resistant in Accordance with the 2000 V Human Body Model

1
Provides a Robust Driver Interface Between Relay Coil and Sensitive

Logic Circuits
CASE 31808, STYLE 6

SOT23 (TO236AB)
Applications include:
Telecom Line Cards and Telephony
Industrial Controls
Security Systems
INTERNAL CIRCUIT DIAGRAM
Appliances and White Goods
Vout
(3)
Automated Test Equipment

Vin 1.0 k
Automotive Controls
6.8 V
This device is intended to replace an array of three to six discrete

components with an integrated SMT part. It is available in a SOT23
package. It can be used to switch other 3 to 5 Vdc Inductive Loads such
as solenoids and small DC motors.
(1)
33 k
GND
(2)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Power Supply Voltage
VCC
6.0
Vdc
Recommended Operating Supply Voltage
VCC
2.05.5
Vdc
Input Voltage
Vin(fwd)
6.0
Vdc
Reverse Input Voltage
Vin(rev)
0.5
Vdc
Output Sink Current Continuous
IO
300
mA
TJ
150
TA
40 to +85
Tstg
65 to +150
Symbol
Max
Unit
PD
225
mW
RqJA
556
C/W
Operating Ambient Temperature Range

Characteristic
Derate above 25C
1. FR5 PCB of 1 x 0.75 x 0.062, TA = 25C
This document contains information on a new product. Specifications and information herein are subject to change without notice.
2818
MDC3105LT1
Characteristic
Symbol
Min
Typ
Max
Unit
V(BRout)
V(BRout)
6.4
6.8
0.7
7.2
5.0
30
2.5
0.2
0.4
250
OFF CHARACTERISTICS
Output Zener Breakdown Voltage
(@ IT = 10 mA Pulse)
Output Leakage Current @ 0 Input Voltage
(Vout = 5.5 Vdc, Vin = O.C., TA = 25C)
(Vout = 5.5 Vdc, Vin = O.C., TA = 85C)
IOO
ON CHARACTERISTICS
Input Bias Current @ Vin = 4.0 Vdc
(IO = 250 mA, Vout = 0.4 Vdc, TA = 40C)
(correlated to a measurement @ 25C)
Iin
mAdc
Output Saturation Voltage

(IO = 250 mA, Vin = 4.0 Vdc, TA = 40C)
Vdc
Output Sink Current Continuous

(TA = 40C, VCE = 0.4 Vdc, Vin = 4.0 Vdc )
IC(on)
mA
TYPICAL APPLICATIONDEPENDENT SWITCHING PERFORMANCE

Symbol
VCC
Min
Typ
Max
Propagation Delay Times:

High to Low Propagation Delay; Figures 1, 2 (5.0 V 74HC04)
Low to High Propagation Delay; Figures 1, 2 (5.0 V 74HC04)
Characteristic
tPHL
tPLH
5.5
5.5
55
430
High to Low Propagation Delay; Figures 1, 3 (3.0 V 74HC04)

Low to High Propagation Delay; Figures 1, 3 (3.0 V 74HC04)
tPHL
tPLH
5.5
5.5
85
315
High to Low Propagation Delay; Figures 1, 4 (5.0 V 74LS04)

Low to High Propagation Delay; Figures 1, 4 (5.0 V 74LS04)
tPHL
tPLH
5.5
5.5
55
2385
Transition Times:
Fall Time; Figures 1, 2 (5.0 V 74HC04)
Rise Time; Figures 1, 2 (5.0 V 74HC04)
tf
tr
5.5
5.5
45
160
Fall Time; Figures 1, 3 (3.0 V 74HC04)

Rise Time; Figures 1, 3 (3.0 V 74HC04)
tf
tr
5.5
5.5
70
195
Fall Time; Figures 1, 4 (5.0 V 74LS04)

Rise Time; Figures 1, 4 (5.0 V 74LS04)
tf
tr
5.5
5.5
45
2400
V/t in
5.5
TBD
Units
ns
ns
Input Slew Rate(1)
V/ms
1. Minimum input slew rate must be followed to avoid overdissipating the device.
tf
Vin
tr
VCC
90%
50%
10%
GND
tPLH
tPHL
90%
50%
10%
Vout
tTHL
VZ
VCC
GND
tTLH
Figure 1. Switching Waveforms
2819
MDC3105LT1
+4.5 VCC +5.5 Vdc
+ +
AROMAT
TX2L23 V
Vout (3)
Vout (3)
MDC3105LT1
74HC04 OR
EQUIVALENT
Vin (1)
MDC3105LT1
1k
1k
6.8 V
Vin (1)
6.8 V
33 k
74HC04 OR
EQUIVALENT
33 k
GND (2)
GND (2)
Figure 2. A 3.0V, 200mW Dual Coil Latching Relay Application

with 5.0 VHCMOS Interface
+3.0 VDD +3.75 Vdc

+4.5 VCC +5.5 Vdc
+ +
AROMAT
TX2L23 V
Vout (3)
Vout (3)
MDC3105LT1
74HC04 OR
EQUIVALENT
Vin (1)
MDC3105LT1
1k
1k
6.8 V
Vin (1)
6.8 V
33 k
74HC04 OR
EQUIVALENT
33 k
GND (2)
GND (2)

with 3.0 VHCMOS Interface
2820
MDC3105LT1
+4.5 VCC +5.5 Vdc
+ +
AROMAT
TX2L23 V
Vout (3)
Vout (3)
MDC3105LT1
74LS04
BAL99LT1
MDC3105LT1
1k
1k
6.8 V
BAL99LT1
6.8 V
33 k
74LS04
33 k
Vin (1)
Vin (1)
GND (2)
GND (2)

with TTL Interface
+4.5 TO +5.5 Vdc
+
AROMAT
R1
TX25 V
+
R2
AROMAT
TX25 V
Max Continuous Current Calculation

R1 = R2 = 178 Nominal @ TA = 25C
Vout (3)
74HC04 OR
EQUIVALENT
Assuming 10% Make Tolerance,

R1 = R2 = (178 ) (0.9) = 160 Min @ TA = 25C
TC for Annealed Copper Wire is 0.4%/C
R1 = R2 = (160 ) [1+(0.004) (4025)] = 118
Min @ 40C
Vin (1)
R1 in Parallel with R2 = 59 Min @ 40C

Io
0.4 V + 86 mA Max
+ 5.5 V59Max
W Min
86 mA 300 mA Max Io spec.

GND (2)
Figure 5. Typical 5.0 V, 140 mW Coil Dual Relay Application
2821
MDC3105LT1
TYPICAL OPERATING WAVEFORMS
4.5
225
3.5
175
IC (mA)
V in (VOLTS)
(Circuit of Figure 5)
2.5
125
1.5
75
500M
25
10
30
50
TIME (ms)
70
90
10
172
132
IZ (mA)
Vout (VOLTS)
52
12
50
TIME (ms)
70
90
10
Figure 8. 20 Hz Square Wave Response
30
50
TIME (ms)
70
90
1
TJ = 125C
Vo = 1.0 V
Vo = 0.25 V
0.8
400
TJ = 85C
300
TJ = 25C
200
TJ = 25C
OUTPUT VOLTAGE (V)
500
hFE
90
600
TJ = 40C
175
0.6
1
10
50
125
250
IC = 350 mA
0.4
0.2
100
0
1
10
100
Io, OUTPUT SINK CURRENT (mA)
Figure 10. Pulsed Current Gain

2822
70
92
30
50
TIME (ms)
Figure 6. 20 Hz Square Wave Input
10
30
1000
0
1E5
1E4
1E3
INPUT CURRENT
1E2

MOTOROLA
MDC5001T1
Low Voltage Bias Stabilizer

with Enable
Maintains Stable Bias Current in NType Discrete Bipolar Junction and Field
Effect Transistors
Provides Stable Bias Using a Single Component Without Use of Emitter Ballast
and Bypass Components
SILICON
SMALLBLOCK
INTEGRATED CIRCUIT
Operates Over a Wide Range of Supply Voltages Down to 1.8 Vdc

Reduces Bias Current Variation Due to Temperature and UnittoUnit Parametric
Changes
Consumes
t 0.5 mW at VCC = 2.75 V
Active High Enable is CMOS Compatible
5
4
This device provides a reference voltage and acts as a DC feedback element

around an external discrete, NPN BJT or NChannel FET. It allows the external
transistor to have its emitter/source directly grounded and still operate with a stable
collector/drain DC current. It is primarily intended to stabilize the bias of discrete RF
stages operating from a low voltage regulated supply, but can also be used to stabilize
the bias current of any linear stage in order to eliminate emitter/source bypassing and
achieve tighter bias regulation over temperature and unit variations. The ENABLE
polarity nulls internal current, Enable current, and RF transistor current in STANDBY.
This device is intended to replace a circuit of three to six discrete components.
The combination of low supply voltage, low quiescent current drain, and small
package make the MDC5001T1 ideal for portable communications applications such
as:
CASE 419B01, Style 19

SOT363
INTERNAL CIRCUIT DIAGRAM

VCC (4)
R1
Cellular Telephones
Q1
Pagers
R2
PCN/PCS Portables
GPS Receivers
Vref (6)
R3
PCMCIA RF Modems
Cordless Phones
Q2
Broadband and Multiband Transceivers and Other Portable Wireless Products
VENBL
(5)
R5
MAXIMUM RATINGS
Rating
Power Supply Voltage
Ambient Operating Temperature Range
Iout (1)
R4
Q4
Symbol
Value
Unit
VCC
15
Vdc
TA
40 to +85
Tstg
65 to +150
TJ
150
Collector Emitter Voltage (Q2)
VCEO
15
Enable Voltage (Pin 5)
VENBL
VCC
Symbol
Max
Unit
R6
GND (2) and (3)
Characteristic
Total Device Power Dissipation
(FR5 PCB of 1 0.75 0.062, TA = 25C)
Derate above 25C
PD
RJA
mW
150
1.2
mW/C
833
C/W
REV 1
2823
MDC5001T1
Characteristic
Symbol
Min
Typ
Max
Unit
Recommended Operating Supply Voltage
VCC
1.8
2.75
10
Volts
Power Supply Current (VCC = 2.75 V)

Vref, Iout are unterminated
See Figure 8
ICC
130
200
V(BR)CEO2
15
Q2 Collector Emitter Breakdown Voltage

(IC2 = 10 A, IB2 = 0)
Reference Voltage (VENBL = VCC = 2.75 V, Vout = 0.7 V)
(Iout = 30 A)
(Iout = 150 A)
See Figure 1
Volts
Vref
Volts
2.050
2.110
2.075
2.135
2.100
2.160
5.0
15
25
10
30
50
DVref
Reference Voltage (VENBL = VCC = 2.75 V, Vout = 0.7 V,

40C TA +85C)
VCC Pulse Width = 10 mS, Duty Cycle = 1%
(Iout = 10 A)
(Iout = 30 A)
(Iout = 100 A)
See Figures 2 and 11
mV
The following SPICE models are provided as a convenience to the user and every effort has been made to insure their accuracy.
However, no responsibility for their accuracy is assumed by Motorola.
.MODEL Q4 NPN
BF = 136
BR = 0.2
CJC = 318.6 f
CJE = 569.2 f
CJS = 1.9 p
EG = 1.215
FC = 0.5
IKF = 24.41 m
IKR = 0.25
IRB = 0.0004
IS = 256E18
ISC = 1 f
ISE = 500E18
ITF = 0.9018
MJC = 0.2161
MJE = 0.3373
MJS = 0.13
NC = 1.09
2824
NE = 1.6
NF = 1.005
RB = 140
RBM = 70
RC = 180
RE = 1.6
TF = 553.6 p
TR = 10 n
VAF = 267.6
VAR = 12
VJC = 0.4172
VJE = 0.7245
VJS = 0.39
VTF = 10
XTB = 1.5
XTF = 2.077
XTI = 3
.MODEL Q1, Q2 PNP

BF = 87
BR = 0.6
CJC = 800E15
CJE = 46E15
EG = 1.215
FC = 0.5
IKF = 3.8E04
IKR = 2.0
IRB = 0.9E3
IS = 1.027E15
ISC = 10E18
ISE = 1.8E15
ITF = 2E3
MJC = 0.2161
MJE = 0.2161
NC = 0.8
NE = 1.38
NF = 1.015
NK = 0.5
NR = 1.0
RB = 720
RBM = 470
RC = 180
RE = 26
TF = 15E9
TR = 50E09
VAF = 54.93
VAR = 20
VAR = 20
VJC = 0.4172
VJE = 0.4172
VTF = 10
XTB = 1.5
XTF = 2.0
XTI = 3
RESISTOR VALUES
R1 = 12 K
R2 = 6 K
R3 = 3.4 K
R4 = 12 K
R5 = 20 K
R6 = 40 K
These models can be retrieved

electronically by accessing the
Motorola Web page at
http://designnet.sps.mot.com/models
and searching the section on
SMALLBLOCK models
MDC5001T1
V CC , SUPPLY VOLTAGE (Vdc)
TJ = 25C
V ENBL = VCC
Iout
Iout
Iout
Iout
= 1000 m A
= 500 mA
= 100 mA
= 10 mA
10
TYPICAL OPEN LOOP CHARACTERISTICS
Vref (Vdc)
Figure 1. Vref versus VCC @ Iout
2825
MDC5001T1
TYPICAL OPEN LOOP CHARACTERISTICS
(Refer to Circuits of Figures 10 through 15)
50
VCC = 2.75 Vdc
VENBL = VCC
Iout = 30 mA
20
V ref (mV)
800
Iout = 100 mA
ICC , SUPPLY CURRENT ( m Adc)
40
30
900
Iout = 500 mA
10
0
Iout = 10 mA
10
20
30
VENBL = VCC
600
TJ = 25C
500
TJ = 85C
400
300
200
100
40
50
45 35 25 15 5 5 15 25 35 45 55
65
85
75
10
160
TJ = 40C
TJ = 25C
TJ = 85C
500
300
TJ = 40C
VCC = 2.75 Vdc

Iref = 30 mA
140
TJ = 25C
120
IENABLE (m Adc)
H FE , Q2 DC CURRENT GAIN
3
4
5
6
7
VCC, SUPPLY VOLTAGE (Vdc)
Figure 3. ICC versus VCC @ TJ
1000
200
100
50
100
TJ = 85C
80
60
40
30
10
10
Figure 2. DVref versus TJ @ Iout
20
TJ = 40C
700
VCE2 = Vout Vref = 1.5 Vdc
20
0
20
30
50
100
200 300
Iout, DC OUTPUT CURRENT (mAdc)
500
1000
0.5
Figure 4. Q2 Current Gain versus

Output Current @ TJ
1.0
1.5
2.0
VENABLE (Vdc)
2.5
3.0
Figure 5. Ienable versus Venable
6.0
Iout = 500 mA
Iout = 30 mA
VCC = 5.0 Vdc

5.0
Vref , (Vdc)
4.0
3.3 Vdc
3.0
2.75 Vdc
2.0
1.8 Vdc
TJ = 25C
1.0
MIN VENBL FOR STABLE Vref @ VCC
0
0
0.5
1.0
1.5
2.0 2.5 3.0

Venable (Vdc)
3.5
4.0
4.5
5.0
Figure 6. Vref versus Venable @ VCC and Iout
2826
MDC5001T1
TYPICAL CLOSED LOOP PERFORMANCE
(Refer to Circuits of Figures 16 & 17)
1.5
DIC 3 (%)
0.5
0
IC3 = 15 mA
2.0
IC3 = 10 mA
IC3 = 3 mA
0.5
1.0
0
1.0
1.0
1.5
IC3 = 15 mA
IC3 = 10 mA
IC3 = 3 mA
IC3 = 1 mA
3.0
V ref (%)
1.0
4.0
VCC = 2.75 Vdc
VENBL = VCC
VCC = 2.75 Vdc

VENBL = VCC
TA = 25C
IC3 = 1 mA
2.0
2.0
45 35 25 15 5 5 15 25 35 45 55
3.0
65 75
85
Figure 7. DIC3 versus TA @ IC3
50
100
150
200
250
EXTERNAL TRANSISTOR DC BETA @ IC3
300
Figure 8. DVref versus External Transistor

DC Beta @ IC3
10
VCC = 2.75 Vdc
VENBL = VCC
TA = 25C
D I C 3 (%)
5.0
5.0
IC3 = 15 mA
IC3 = 10 mA
IC3 = 3 mA
IC3 = 1 mA
10
15
0
50
250
100
150
200
HFE, EXTERNAL TRANSISTOR DC BETA
300
Figure 9. DIC3 versus External Transistor

DC Beta @ IC3
2827
MDC5001T1
OPEN LOOP TEST CIRCUITS
ICC
ICC
VCC (4)
VCC (4)
Q1
Q1
ENABLE
(5)
ENABLE
(5)
Vref (6)
Vref (6)
Q2
Iout (1)
Q2
Iout (1)
Iout
MDC5001
MDC5001
Q4
VCC
+
VBE3 = 0.7 V
GND (2) & (3)

GND (2) & (3)
Figure 11. Vref versus VCC Test Circuit
VCC (4)
VCC (4)
Q1
MDC5001
Q1
IB
ENABLE
(5)
Vref (6)
Q2
Iout (1)
Vref (6)
Q2
Iref
Iout
GND (2) & (3)
VBE3 = 0.7 V
Iout
Q4
V Vref
Iout
Iout (1)
MDC5001
Q4
VCC =
2.75 V
See NOTE 1
Figure 10. ICC versus VCC Test Circuit
V Vref
Iout
VCC
ENABLE
(5)
Iref
Q4
A Iout
A
GND (2) & (3)
1.5 V
See NOTE 1
Figure 12. Vref versus TJ Test Circuit
Figure 13. HFE versus Iout Test Circuit
VCC (4)
VCC (4)
+
+
VCC =
2.75 V
Q1
Q1
VCC
ENABLE
(5)
IENBL A
Vref (6)
Q2
MDC5001
Q4
Iout (1)
Iout
Vref (6)
ENABLE
(5)
Iref = 30 mA
Q2
MDC5001
+
GND (2) & (3)
VBE3 = 0.7 V
GND (2) & (3)
Iref
Iout
Vref +
V
Q4
VENBL
VENBL
Iout (1)
Iout A
+
VBE3 = 0.7 V
See NOTE 1
Figure 14. IENBL versus VENBL Test Circuit
Figure 15. Vref versus VENBL Test Circuit
NOTE 1: VBE3 is used to simulate actual operating conditions that reduce VCE2 & HFE2, and increase IB2 & Vref.
2828
MDC5001T1
CLOSED LOOP TEST CIRCUITS
VCC (4)
A
IC3
Q1
Vref (6)
ENABLE (5)
Q2
Iout (1)
A
MDC5001
+
VBE3
Q3
Iout
Q4
VCC =
2.75 V
Vref
GND (2) & (3)
Figure 16. Vref and RF Stage IC3 versus HFE3 Test Circuit
VCC (4)
A
IC3
Q1
Vref (6)
ENABLE (5)
Q2
Iout (1)
1K
VBE3
MDC5001
+
Q4
VCC =
2.75 V
Q3
MRF941
HFE = 113
51
51
0.1 mF
100 pF
100 pF
0.018 mF
0.018 mF
GND (2) & (3)

NOTE: External RCs used to Maintain Broadband Stability of MRF941
Figure 17. RF Stage IC3 versus TA Test Circuit
2829
MDC5001T1
APPLICATION CIRCUITS
REGULATED VCC = 2.75 Vdc
VCC (4)
IC3 = 3 mAdc
Q1
ENABLE
(5)
Q2
VENBL
Iout (1)
470 pF
30 nH
180
MDC5001
R5
240
Vref = 2.025 Vdc
Vref (6)
1K
Q4
Iout
8.0 nH
470 pF
VCC = 2.75 V
18 nH
RF OUT
Q3
MRF9411
Typ
RF IN
9 pF
GND (2) & (3)
5STEP DESIGN PROCEDURE

Step 1:
Step 2:
Step 3:
Step 4:
Step 5:
Choose VCC (1.8 V Min to 10 V Max)

Insure that Min VENBL is minimum indicated in Figures 5 and 6.
Choose bias current, IC3, and calculate needed Iout from typ HFE3
From Figure 1, read Vref for VCC and Iout calculated.
Calculate Nominal R5 = (VCC Vref)
(IC3 + Iout). Tweak as desired.
Figure 18. Class A Biasing of a Typical 900 MHz

BJT Amplifier Application
REGULATED VCC = 2.75 Vdc
VCC (4)
ID = 15 mAdc
R5
43 W
Q1
RFC
Vref (6)
ENABLE
(5)
Q2
VENBL
Vref = 2.085 Vdc
Iout (1)
1000 pF
6.8 nH
MDC5001
2.7 pF
RF OUT
1K
Q4
Iout
VCC =
2.75 V
12.5 nH
1000 pF
R6
22 K
RF IN
GND (2) & (3)
6.1 pF
Q3
MRF9811
Typ
EGS
5 Vdc
7STEP DESIGN PROCEDURE

Step 1:
Step 2:
Step 3:
Step 4:
Choose VCC (1.8 V Min to 10 V Max)

Insure that Min VENBL is minimum indicated in Figures 5 and 6.
Choose bias current, ID, and determine needed gatesource voltage, VGS.
Choose Iout keeping in mind that too large an Iout can impair MDC5000 DVref/DTJ
performance (Figure 2) but too large an R6 can cause IDGO & IGSO to bias on the FET.
Step 5: Calculate R6 = (VGS + EGS)
Iout
Step 6: From Figure 1, read Vref for VCC & Iout chosen
Step 7: Calculate Nominal R5 = (VCC Vref)
(ID + Iout). Tweak as desired.
Figure 19. Class A Biasing of a Typical 890 MHz

Depletion Mode GaAs FET Amplifier
2830
Section 3
GreenLine Portfolio
In Brief . . .
New in this revision is Motorolas GreenLine portfolio of
devices. These devices feature energyconserving traits
superior to those of our existing line of standard parts for the
same usage. GreenLine devices can actually help reduce
the power demands of your products. In an increasingly
powerhungry world, Motorolas GreenLine portfolio
makes powerful sense. So much sense that we plan to
continue adding devices to the portfolio. Chances are, there
are Motorola GreenLine devices applicable to one or more
of your products ones that can help save energy, dollars
and the environment.
Currently, our portfolio consists of three families:
LowLeakage Switching Diodes: Reverse leakage
specifications guaranteed to 500 pA. They help extend battery life and are ideal for small battery powered systems in
which standby power is essential. Applications include ESD
protection, reverse voltage protection, and steering logic.
Bipolar Output Driver Transistors: Ultralow collector
saturation voltage. They deliver more energy to the intended
load with less power wasted through dissipation loss. Especially effective in lower voltage battery powered applications
and prolong battery life in portable and handheld communications and personal digital equipment. Applications include low voltage display light drivers and general output
drivers.
Small Signal HDTMOS: Lowest ever drainsource resistance versus package size. Lower rDS(on) means less
wasted energy through dissipation loss. Especially effective
for lowcurrent applications where energy conservation is
crucial. These small MOSFETs are ideal for spacesensitive
power management circuitry. Applications include low current switchmode power supplies, uninterruptable power supplies (UPS), power management systems, and bias
switching.
This chapter exclusively highlights the GreenLine devices,
which are also listed in their respective Transistor, Diode and
MOSFET chapters.
3
3
1
2
2
CASE 318-08
(TO-236AB)
SOT-23
CASE 318D-04
SC59
6
4
1
1
3
CASE 318G-02
TSOP6
CASE 318E-04
(TO-261AA)
SOT-223
3
1
2
1
CASE 419-02
SC70/SOT323
CASE 425-04
SOD123
31
MOTOROLA
BSS84LT1
Low rDS(on) Small-Signal MOSFETs

TMOS Single P-Channel
Field Effect Transistors
Part of the Greenline Portfolio of devices with energyconserving traits.
These miniature surface mount MOSFETs utilize Motorolas High
Cell Density, HDTMOS process. Reduced power loss conserves
energy, making this device ideal for use in small power management circuitry. Typical applications are dcdc converters, load
switching, power management in portable and batterypowered
products such as computers, printers, cellular and cordless
telephones.
1
PCHANNEL
ENHANCEMENTMODE
TMOS MOSFET
3 DRAIN
3
1
2
CASE 31808, Style 21

SOT23 (TO236AB)
GATE
Energy Efficient
Miniature SOT23 Surface Mount Package Saves Board Space

2 SOURCE
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)

Rating
Symbol
Value
Unit
VDSS
50
Vdc
GatetoSource Voltage Continuous
VGS
20
Vdc
Drain Current Continuous @ TA = 25C

Drain Current Pulsed Drain Current (tp 10 s)
ID
IDM
130
520
mA
DraintoSource Voltage
PD
225
mW
TJ, Tstg
55 to 150
Thermal Resistance JunctiontoAmbient
RJA
556
C/W
TL
260
Maximum Lead Temperature for Soldering Purposes, for 10 seconds
DEVICE MARKING
BSS84LT1 = PD
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
BSS84LT1
8mm embossed tape
3000
BSS84LT3
13
8mm embossed tape
10,000
REV 1
32
BSS84LT1
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
50
Vdc
0.1
15
60
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 Adc)
Adc
Zero Gate Voltage Drain Current

(VDS = 25 Vdc, VGS = 0 Vdc)
(VDS = 50 Vdc, VGS = 0 Vdc, TJ = 125C)
IDSS
GateBody Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc)
IGSS
60
Adc
GateSource Threaded Voltage

(VDS = VGS, ID = 1.0 mAdc)
VGS(th)
0.8
2.0
Vdc
Static DraintoSource OnResistance

(VGS = 5.0 Vdc, ID = 100 mAdc)
rDS(on)
5.0
10
Ohms
|yfs|
50
mS
(VDS = 5.0 Vdc)
Ciss
30
pF
Output Capacitance
(VDS = 5.0 Vdc)
Coss
10
Transfer Capacitance
(VDG = 5.0 Vdc)
Crss
5.0
td(on)
2.5
tr
1.0
td(off)
16
Transfer Admittance
(VDS = 25 Vdc, ID = 100 mAdc, f = 1.0 kHz)
Input Capacitance
SWITCHING CHARACTERISTICS(2)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
((VDD = 15 Vdc, ID = 2.5 Adc,

RL = 50 )
Fall Time
ns
tf
8.0
QT
6000
pC
IS
0.130
Pulsed Current
ISM
0.520
Forward Voltage(2)
VSD
2.5
Gate Charge
SOURCEDRAIN DIODE CHARACTERISTICS
Continuous Current
(1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%.

(2) Switching characteristics are independent of operating junction temperature.

0.6
0.5
25C
55C
150C
VGS = 3.5 V
TJ = 25C
0.45
0.5
I D , DRAIN CURRENT (AMPS)
VDS = 10 V
3.25 V
0.4
0.35
0.4
0.3
3.0 V
0.25
0.3
0.2
0.2
2.75 V
0.15
0.1
2.5 V
0.1
2.25 V
0.05
0
1.5
2
2.5
3
3.5
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 1. Transfer Characteristics
10
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 2. OnRegion Characteristics
33
9
VGS = 4.5 V
8
150C
7
6
25C
5
4
55C
3
2
0
0.1
0.2
0.3
0.4
0.5
0.6
RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS)
BSS84LT1
7
150C
VGS = 10 V
6.5
6
5.5
5
4.5
4
25C
3.5
3
55C
2.5
2
0
0.2
0.1
RDS(on) , DRAINTOSOURCE RESISTANCE

(NORMALIZED)
2
VGS = 10 V
ID = 0.52 A
1.6
1.4
VGS = 4.5 V
ID = 0.13 A
1.2
1
0.8
0.6
55
45
0.4
0.6
0.5
Figure 4. OnResistance versus Drain Current
1.8
0.3
ID, DRAIN CURRENT (AMPS)
95
6
5
4
ID = 0.5 A
3
2
1
0
145
VDS = 40 V
TJ = 25C
1000
500
1500
2000
QT, TOTAL GATE CHARGE (pC)
Figure 6. Gate Charge
Figure 5. OnResistance Variation with Temperature
I D , DIODE CURRENT (AMPS)
TJ = 150C
0.1
25C
55C
0.01
0.001
0.5
1.0
1.5
2.0
2.5
3.0
VSD, DIODE FORWARD VOLTAGE (VOLTS)
Figure 7. Body Diode Forward Voltage
34
MOTOROLA
BSS138LT1
N-Channel Enhancement Mode

Logic Level SOT-23 MOSFET
NCHANNEL
LOGIC LEVEL
TMOS FET
TRANSISTOR
Typical applications are dcdc converters, power management in

portable and batterypowered products such as computers,
printers, PCMCIA cards, cellular and cordless telephones.
Low Threshold Voltage (VGS(th): 0.5V...1.5V) makes it ideal for
low voltage applications
Miniature SOT23 Surface Mount Package saves board space

3 DRAIN
1
2

SOT23 (TO236A)
1
GATE
2 SOURCE

Symbol
Rating
Value
Unit
VDSS
50
Vdc
VGS
20
Vdc

ID
IDM
200
800
mA
PD
225
mW
TJ, Tstg
55 to 150
RJA
556
C/W
TL
260
DEVICE MARKING
BSS138LT1 = J1
Device
Reel Size
Tape Width
Quantity
BSS138LT1
8mm embossed tape
3000
BSS138LT3
13
8mm embossed tape
10,000
REV 1
35
BSS138LT1
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
50
Vdc
0.1
0.5
OFF CHARACTERISTICS
Adc

IDSS
GateSource Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc)
IGSS
0.1
Adc
GateSource Threshold Voltage

VGS(th)
0.5
1.5
Vdc

(VGS = 2.75 Vdc, ID < 200 mAdc, TA = 40C to +85C)
rDS(on)
5.6
10
3.5
gfs
100
mmhos
(VDS = 25 Vdc, VGS = 0, f = 1 MHz)
Ciss
40
50
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1 MHz)
Coss
12
25
(VDG = 25 Vdc, VGS = 0, f = 1 MHz)
Crss
3.5
5.0
td(on)
20
td(off)
20
Forward Transconductance
Ohms
Input Capacitance
TurnOn Delay Time
TurnOff Delay Time
(VDD = 30 Vdc,
Vdc ID = 0.2
0 2 Adc,)
Adc )
ns

36
BSS138LT1
0.8
0.9
VGS = 3.5 V
TJ = 25C
VGS = 3.25 V
0.6
VGS = 3.0 V
0.5
VGS = 2.75 V
0.4
VGS = 2.5 V
0.3
0.2
150C
0.6
0.5
0.4
0.3
0.2
0.1
0
10
0.5
1.5
2.5
3.5
4.5

2.2
1.25
ID = 1.0 mA
2
VGS = 10 V
ID = 0.8 A
1.8
Vgs(th) , VARIANCE (VOLTS)

(NORMALIZED)
25C
55C
0.7
0.1
0
VDS = 10 V
0.8
0.7
1.6
VGS = 4.5 V
ID = 0.5 A
1.4
1.2
1
1.125
0.875
0.8
5
45
95
0.75
55
145
30
20
45
70
95
120
Figure 3. OnResistance Variation with

Temperature
Figure 4. Threshold Voltage Variation

with Temperature
0.6
55
145
10
VDS = 40 V
TJ = 25C
8
4
ID = 200 mA
2
0
0
500
1000
1500
2000
2500
3000
37
10
VGS = 2.5 V
9
8
150C
7
6
5
25C
4
55C
3
2
1
0.05
0.15
0.1
0.25
0.2
BSS138LT1
8
VGS = 2.75 V
7
150C
6
5
4
25C
3
2
55C
1
0
150C
5
4.5
4
3.5
3
25C
2.5
2
55C
1.5
1
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
VGS = 4.5 V
0.05
0.25
0.2
0.15
5.5
0.1
0.05
4.5
VGS = 10 V
150C
4
3.5
3
2.5
25C
2
55C
1.5
1
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
120
100
TJ = 150C
0.1
25C
55C
80
60
Ciss
0.01
40
Coss
20
0.001
Crss
0
0.2
0.4
0.6
0.8
1.0
1.2
10
15
20
25
38
MOTOROLA
MGSF1N02LT1

TMOS Single N-Channel
Part of the GreenLine Portfolio of devices with energy
conserving traits.
NCHANNEL
ENHANCEMENTMODE
TMOS MOSFET
These miniature surface mount MOSFETs utilize Motorolas

High Cell Density, HDTMOS process. Low rDS(on) assures
minimal power loss and conserves energy, making this device
ideal for use in space sensitive power management circuitry.
Typical applications are dcdc converters and power management in portable and batterypowered products such as
computers, printers, PCMCIA cards, cellular and cordless
telephones.
3 DRAIN
1
2

SOT23 (TO236AB)
1
GATE
Low rDS(on) Provides Higher Efficiency and Extends Battery

Life
2 SOURCE
Miniature SOT23 Surface Mount Package Saves Board

Space

Rating
Symbol
Value
Unit
VDSS
20
Vdc
VGS
20
Vdc

ID
IDM
750
2000
mA
PD
400
mW
TJ, Tstg
55 to 150
RJA
300
C/W
TL
260
Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds
Device Marking: NZ
Device
Reel Size
Tape Width
Quantity
MGSF1N02LT1
8mm embossed tape
3000
MGSF1N02LT3
13
8mm embossed tape
10,000
REV 2
39
MGSF1N02LT1
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
20
Vdc
1.0
10
OFF CHARACTERISTICS
Adc

IDSS
IGSS
100
nAdc
Gate Threshold Voltage

(VDS = VGS, ID = 250 Adc)
VGS(th)
1.0
1.7
2.4
Vdc

(VGS = 10 Vdc, ID = 1.2 Adc)
(VGS = 4.5 Vdc, ID = 1.0 Adc)
rDS(on)
0.075
0.115
0.090
0.130
Ohms
Input Capacitance
(VDS = 5.0 Vdc)
Ciss
125
Output Capacitance
(VDS = 5.0 Vdc)
Coss
120
pF
(VDG = 5.0 Vdc)
Crss
45
td(on)
2.5
tr
1.0
td(off)
16
tf
8.0
QT
6000
pC
IS
0.6
Pulsed Current
ISM
0.75
Forward Voltage(2)
VSD
0.8
TurnOn Delay Time
Rise Time
TurnOff Delay Time
((VDD = 15 Vdc, ID = 1.0 Adc,

RL = 50 )
Fall Time
Gate Charge (See Figure 6)
ns

Continuous Current


2.5
3
4V
VDS = 10 V
2
55C
1.5
TJ = 150C
0.5
1.5
2
2.5
3
310
3.25 V
3.5 V
2
VGS = 3.0 V
1.5
2.75 V
2.5 V
0.5
25C
0
2.5
2.25 V
3.5
10
0.2
150C
0.18
0.16
VGS = 4.5 V
0.14
25C
0.12
55C
0.1
0.08
0.06
0.04
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
MGSF1N02LT1
0.14
0.13
150C
0.12
VGS = 10 V
0.11
0.1
0.09
25C
0.08
0.07
55C
0.06
0.05
0.04
0
0.2
0.4
0.6

(NORMALIZED)
1.6
VGS = 10 V
ID = 2 A
1.4
1.3
VGS = 4.5 V
ID = 1 A
1.2
1.1
1
0.9
0.8
0.7
1.2
1.6
1.4
1.8
10
VDS = 16 V
TJ = 25C
8
4
ID = 2.0 A
2
0
0.6
55
45
95
145
2000
1000
3000
4000
5000
6000
1000
TJ = 150C
0.1
25C
55C
C, CAPACITANCE (pF)
1.5
0.8
0.01
VGS = 0 V
f = 1 MHz
TJ = 25C
Ciss
100
Coss
Crss
0.001
0
0.2
0.4
0.6
0.8
10
10
15
20
VDS, DRAINTOSOURCE VOLTAGE (Volts)
311
MOTOROLA
MGSF1N03LT1

conserving traits.
NCHANNEL
ENHANCEMENTMODE
TMOS MOSFET

telephones.
Life
3 DRAIN
1
2

SOT23 (TO236AB)
1
GATE
2 SOURCE

Space

Rating
Symbol
Value
Unit
VDSS
30
Vdc
VGS
20
Vdc

ID
IDM
750
2000
mA
PD
400
mW
TJ, Tstg
55 to 150
RJA
300
C/W
TL
260
Device Marking: N3
Reel Size
Tape Width
Quantity
MGSF1N03LT1
Device
8mm embossed tape
3000
MGSF1N03LT3
13
8mm embossed tape
10,000
REV 4
312
MGSF1N03LT1
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
30
Vdc
1.0
10
OFF CHARACTERISTICS
Adc

IDSS
IGSS
100
nAdc

VGS(th)
1.0
1.7
2.4
Vdc

(VGS = 10 Vdc, ID = 1.2 Adc)
(VGS = 4.5 Vdc, ID = 1.0 Adc)
rDS(on)
0.08
0.125
0.10
0.145
Ohms
Input Capacitance
(VDS = 5.0 Vdc)
Ciss
140
Output Capacitance
(VDS = 5.0 Vdc)
Coss
100
pF
(VDG = 5.0 Vdc)
Crss
40
td(on)
2.5
tr
1.0
td(off)
16
tf
8.0
QT
6000
pC
IS
0.6
Pulsed Current
ISM
0.75
Forward Voltage(2)
VSD
0.8
TurnOn Delay Time
Rise Time
((VDD = 15 Vdc, ID = 1.0 Adc,

RL = 50 )
TurnOff Delay Time

Fall Time
ns

Continuous Current


2.5
2.5
VGS = 3.75 V
3.5 V
VDS = 10 V
2
1.5
55C
TJ = 150C
0.5
1.5
3.25 V
1
3.0 V
0.5
2.75 V
25C
0
1.5
2
2.5
3
2.5 V
3.5
10
313
R DS(on) , DRAINTOSOURCE RESISTANCE (OHMS
RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS
MGSF1N03LT1
0.24
150C
0.19
VGS = 4.5 V
25C
0.14
55C
0.09
0.04
0
0.1
0.2
0.3
0.4
0.5
0.6
0.8
0.7
0.9
0.16
150C
0.14
VGS = 10 V
0.12
0.1
25C
0.08
55C
0.06
0.04
0
0.2
0.4

(NORMALIZED)
VGS = 10 V
ID = 2 A
1.2
VGS = 4.5 V
ID = 1 A
1
0.8
0.6
0.4
0.2
0
55
1.2
1.4
1.6
1.8
10
VDS = 24 V
TJ = 25C
8
4
ID = 2.0 A
2
0
25
50
25
75
100
125
150
2000
1000
3000
4000
5000
6000
350
VGS = 0 V
f = 1 MHz
TJ = 25C
300
TJ = 150C
0.1
25C
55C
C, CAPACITANCE (pF)
1.8
1.4
0.8
1.6
0.6
0.01
250
200
150
Ciss
100
Coss
50
0.001
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
314
0.9
Crss
0
12
16
20
MOTOROLA
MGSF1P02ELT1

conserving traits.
PCHANNEL
ENHANCEMENTMODE
TMOS MOSFET

telephones.
3 DRAIN
1
2

SOT23 (TO236AB)
1
GATE

Life
2 SOURCE

Symbol
Value
Unit
VDSS
20
Vdc
VGS
8.0
Vdc

ID
IDM
750
2000
mA
Rating
PD
400
mW
TJ, Tstg
55 to 150
RJA
300
C/W
TL
260
Device Marking: PC
Device
Reel Size
Tape Width
Quantity
MGSF1P02ELT1
8mm embossed tape
3000
MGSF1P02ELT3
13
8mm embossed tape
10,000
315
MGSF1P02ELT1
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
20
Vdc
1.0
10
OFF CHARACTERISTICS
Adc

IDSS
GateBody Leakage Current (VGS = 8.0 Vdc, VDS = 0 Vdc)
IGSS
100
nAdc

VGS(th)
0.7
0.85
1.2
Vdc

(VGS = 4.5 Vdc, ID = 0.75 Adc)
(VGS = 2.5 Vdc, ID = 0.5 Adc)
rDS(on)
0.20
0.32
0.26
0.50
Ohms
Input Capacitance
(VDS = 5.0 Vdc)
Ciss
130
Output Capacitance
(VDS = 5.0 Vdc)
Coss
120
pF
(VDG = 5.0 Vdc)
Crss
60
td(on)
2.5
tr
1.0
td(off)
16
tf
8.0
QT
6000
pC
IS
0.6
Pulsed Current
ISM
0.75
Forward Voltage(2)
VSD
1.5
TurnOn Delay Time
Rise Time
TurnOff Delay Time
((VDD = 15 Vdc, ID = 1.0 Adc,

RL = 50 )
Fall Time
ns

Continuous Current

316
MOTOROLA
MGSF1P02LT1

conserving traits.
PCHANNEL
ENHANCEMENTMODE
TMOS MOSFET

telephones.
3 DRAIN
1
2

SOT23 (TO236AB)
1
GATE

Life
2 SOURCE

Rating
Symbol
Value
Unit
VDSS
20
Vdc
VGS
20
Vdc

ID
IDM
750
2000
mA
PD
400
mW
TJ, Tstg
55 to 150
RJA
300
C/W
TL
260
Device Marking: PC
Device
Reel Size
Tape Width
Quantity
MGSF1P02LT1
8mm embossed tape
3000
MGSF1P02LT3
13
8mm embossed tape
10,000
REV 2
317
MGSF1P02LT1
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
20
Vdc
1.0
10
OFF CHARACTERISTICS
Adc

IDSS
IGSS
100
nAdc

VGS(th)
1.0
1.7
2.4
Vdc

(VGS = 10 Vdc, ID = 1.5 Adc)
(VGS = 4.5 Vdc, ID = 0.75 Adc)
rDS(on)
0.235
0.375
0.350
0.500
Ohms
Input Capacitance
(VDS = 5.0 Vdc)
Ciss
130
Output Capacitance
(VDS = 5.0 Vdc)
Coss
120
pF
(VDG = 5.0 Vdc)
Crss
60
td(on)
2.5
tr
1.0
td(off)
16
tf
8.0
QT
6000
pC
IS
0.6
Pulsed Current
ISM
0.75
Forward Voltage(2)
VSD
1.5
TurnOn Delay Time
Rise Time
((VDD = 15 Vdc, ID = 1.0 Adc,

RL = 50 )
TurnOff Delay Time

Fall Time
ns

Continuous Current


1.5
1.5
VGS = 3.5 V
1.25
3.25 V
1.25
VDS = 10 V
1
3.0 V
0.75
0.75
55C
0.5
TJ = 150C
25C
0.25
2.75 V
0.5
2.5 V
0.25
2.25 V
0
1.5
2
2.5
3
318
3.5
10
0.55
150C
0.5
VGS = 4.5 V
0.45
25C
0.4
55C
0.35
0
0.1
0.3
0.2
0.5
0.4
0.6
0.7
0.8
MGSF1P02LT1
0.4
0.38
0.36
VGS = 10 V
0.34
150C
0.32
0.3
0.28
25C
0.26
0.24
55C
0.22
0.2
0
0.4
0.2

(NORMALIZED)
1.25
VGS = 10 V
ID = 1.5 A
1.15
1.1
VGS = 4.5 V
ID = .75 A
1.05
1
0.95
0.9
0.85
1.6
1.4
10
VDS = 16 V
TJ = 25C
8
4
ID = 1.5 A
2
45
95
145
2000
1000
4000
3000
5000
6000
1000
TJ = 150C
0.1
25C
55C
C, CAPACITANCE (pF)
1.2
0.8
55
0.01
0.001
1.2
0.8
0.6
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
VGS = 0 V
f = 1 MHz
TJ = 25C
Ciss
100
Coss
Crss
10
10
319
MOTOROLA
MGSF3441VT1

conserving traits.
ideal for use in small power management circuitry. Typical
applications are dcdc converters, power management in
PCHANNEL
ENHANCEMENTMODE
TMOS MOSFET
rDS(on) = 78 m (TYP)
1 2 5 6
DRAIN
Visit our Web Site at http://www.motsps.com/ospd
CASE 318G02, Style 1

TSOP 6 PLASTIC
3
GATE
Low rDS(on) Provides Higher Efficiency and Extends Battery Life

Miniature TSOP 6 Surface Mount Package Saves Board Space
SOURCE
4

Rating
Symbol
Value
Unit
VDSS
20
Vdc
VGS
8.0
Vdc

ID
IDM
3.3
20
PD
2.0
TJ, Tstg
55 to 150
RJA
128
C/W
TL
260
Total Power Dissipation @ TA = 25C Mounted on FR4 t
5 sec
Device
Reel Size
Tape Width
Quantity
MGSF3441VT1
8 mm embossed tape
3000
MGSF3441VT3
13
8 mm embossed tape
10,000
320
MGSF3441VT1
Characteristic
Symbol
Min
Typ
Max
20
1.0
4.0
100
0.45
0.078
0.110
0.090
0.135
Unit
OFF CHARACTERISTICS
(VGS = 0 Vdc, ID = 10 A)
V(BR)DSS

IDSS
GateBody Leakage Current (VGS = 8.0 Vdc, VDS = 0)
IGSS
Vdc
Adc
nAdc
VGS(th)

(VGS = 4.5 Vdc, ID = 3.3 A)
(VGS = 2.5 Vdc, ID = 2.9 A)
rDS(on)
Vdc
Ohms
Input Capacitance
(VDS = 5.0 V)
Ciss
90
Output Capacitance
(VDS = 5.0 V)
Coss
50
pF
(VDG = 5.0 V)
Crss
10
td(on)
27
50
tr
17
30
td(off)
52
80
tf
45
70
QT
3000
pC
IS
1.0
Pulsed Current
ISM
20
Forward Voltage(2)
VSD
0.80
1.2
TurnOn Delay Time
Rise Time
TurnOff Delay Time
( DD = 15 Vdc, ID = 1.0 A,
(V
VGEN = 10 V, RL = 10 )
Fall Time
Gate Charge
ns

Continuous Current

321
MGSF3441VT1
20
VGS = 4.5 V
20
4.0 V
TC = 55C
3.5 V
125C
16
3.0 V
ID , DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
16
12
2.5 V
8.0
2.0 V
4.0
25C
12
8.0
4.0
1.5 V
0
0
0
1.0
2.0
3.0
4.0
5.0
3.0
4.0
VGS, GATETOSOURCE VOLTAGE (V)
Figure 1. Output Characteristics
1400
1200
0.24
VGS = 2.5 V
C, CAPACITANCE (pF)
R DS(on) , ONRESISTANCE ( )
2.0
VDS, DRAINTOSOURCE VOLTAGE (V)
0.30
0.18
0.12
VGS = 4.5 V
1000
800
600
Ciss
400
Coss
0.06
200
4.0
8.0
12
16
12
8.0
16
R DS(on) , ONRESISTANCE ( ) (NORMALIZED)
3.0
2.0
1.0
0
0
4.0
VDS = 10 V
ID = 3.3 A
4.0
20
5.0
322
Crss
VGS , GATETOSOURCE VOLTAGE (V)
1.0
2.0
4.0
6.0
8.0
10
20
1.8
1.6
VGS = 4.5 V
ID = 3.3 A
1.4
1.2
1.0
0.8
0.6
50
25
25
50
75
100
125
Qg, TOTAL GATE CHARGE (nC)
Figure 6. OnResistance versus Junction

Temperature
150
MGSF3441VT1
20
0.30
ID = 3.3 A
IS , SOURCE CURRENT (A)
TJ = 150C
10
TJ = 25C
0.18
0.12
0.06
0
1.0
0.25
0.50
0.75
1.00
1.25
1.50
2.0
4.0
6.0
8.0
VSD, SOURCETODRAIN VOLTAGE (V)
Figure 7. SourceDrain Diode Forward Voltage
Figure 8. OnResistance versus

GatetoSource Voltage
0.4
20
0.3
V GS(th) , VARIANCE (V)
0.24
16
0.1
POWER (W)
0.2
ID = 250 A
12
8.0
0
4.0
0.1
0.2
50
0
25
25
50
75
100
125
150
0.01
0.1
1.0
10
TJ, TEMPERATURE (C)
TIME (sec)
Figure 9. Threshold Voltage
Figure 10. Single Pulse Power
NORMALIZED EFFECTIVE TRANSIENT

THERMAL IMPEDANCE
2.0
1.0
DUTY CYCLE = 0.5
0.2
0.1
NOTES:
PDM
0.1
1. DUTY CYCLE, D = t1/t2

2. PER UNIT BASE =
2. RthJA = 62.5C/W
3. TJM TA = PDMZthJA(t)
4. SURFACE MOUNTED
0.05
0.02
t1
SINGLE PULSE
t2
0.01
0.0001
0.001
0.01
0.1
1.0
10
30
SQUARE WAVE PULSE DURATION (sec)
Figure 11. Normalized Thermal Transient Impedance, JunctiontoAmbient
323
MOTOROLA
MGSF3441XT1


conserving traits.
PCHANNEL
ENHANCEMENTMODE
TMOS MOSFET
1 2 5 6
DRAIN

TSOP 6 PLASTIC
3
GATE

SOURCE
4

Rating
Symbol
Value
Unit
VDSS
20
Vdc
VGS
8.0
Vdc

ID
IDM
1.5
20
PD
950
mW
TJ, Tstg
55 to 150
RJA
132
C/W
TL
260
Device
Reel Size
Tape Width
Quantity
MGSF3441XT1
8 mm embossed tape
3000
MGSF3441XT3
13
8 mm embossed tape
10,000
REV 2
324
MGSF3441XT1
Characteristic
Symbol
Min
Typ
Max
20
1.0
4.0
100
0.45
0.078
0.110
0.100
0.135
Unit
OFF CHARACTERISTICS
(VGS = 0 Vdc, ID = 10 A)
V(BR)DSS

IDSS
IGSS
Vdc
Adc
nAdc
VGS(th)

(VGS = 4.5 Vdc, ID = 1.5 A)
(VGS = 2.5 Vdc, ID = 1.2 A)
rDS(on)
Vdc
Ohms
Input Capacitance
(VDS = 5.0 V)
Ciss
90
Output Capacitance
(VDS = 5.0 V)
Coss
50
pF
(VDG = 5.0 V)
Crss
10
td(on)
27
50
tr
17
30
td(off)
52
80
tf
45
70
QT
3000
pC
IS
1.0
Pulsed Current
ISM
20
Forward Voltage(2)
VSD
0.80
1.2
TurnOn Delay Time
Rise Time
TurnOff Delay Time
( DD = 15 Vdc, ID = 1.0 A,
(V
VGEN = 10 V, RL = 10 )
Fall Time
Gate Charge
ns

Continuous Current

325
MOTOROLA
MGSF3442VT1


conserving traits.
NCHANNEL
ENHANCEMENTMODE
TMOS MOSFET
1 2 5 6
DRAIN

TSOP 6 PLASTIC
3
GATE

SOURCE
4

Rating
Symbol
Value
Unit
VDSS
20
Vdc
VGS
8.0
Vdc

ID
IDM
4.0
20
PD
2.0
TJ, Tstg
55 to 150
RJA
62.5
C/W
TL
260
5 sec
Device
Reel Size
Tape Width
Quantity
MGSF3442VT1
8 mm embossed tape
3000
MGSF3442VT3
13
8 mm embossed tape
10,000
326
MGSF3442VT1
Characteristic
Symbol
Min
Typ
Max
20
1.0
5.0
100
0.6
0.058
0.072
0.070
0.095
Unit
OFF CHARACTERISTICS
(VGS = 0 Vdc, ID = 10 A)
V(BR)DSS

IDSS
IGSS
Vdc
Adc
nAdc
VGS(th)

(VGS = 4.5 Vdc, ID = 4.0 A)
(VGS = 2.5 Vdc, ID = 3.4 A)
rDS(on)
Vdc
Ohms
Input Capacitance
(VDS = 5.0 V)
Ciss
90
Output Capacitance
(VDS = 5.0 V)
Coss
50
pF
(VDG = 5.0 V)
Crss
10
td(on)
8.0
20
tr
24
40
td(off)
36
60
tf
10
20
QT
nC
IS
1.0
Pulsed Current
ISM
5.0
Forward Voltage(2)
VSD
1.2
TurnOn Delay Time
Rise Time
TurnOff Delay Time
( DD = 10 Vdc, ID = 1.0 A,
(V
VGEN = 10 V, RL = 10 )
Fall Time
Gate Charge
ns

Continuous Current

327
MGSF3442VT1
20
TC = 55C
2.5 V
16
16
20
3.0 V
VGS = 4.5 V
4.0 V
3.5 V
12
2.0 V
8.0
4.0
125C
12
25C
8.0
4.0
1.5 V
0
0
0
1.0
3.0
2.0
4.0
5.0
2.5
3.0
1200
0.12
1000
VGS = 2.5 V
0.10
0.08
C, CAPACITANCE (pF)
2.0
VGS = 4.5 V
0.06
0.04
800
600
Ciss
400
Coss
200
0.02
Crss
0
0
4.0
8.0
12
16
20
16
3.0
2.0
1.0
0
0
12
8.0
4.0
VDS = 10 V
ID = 4.0 A
4.0
5.0
1.5
1.0
0.14
328
0.5
2.0
4.0
6.0
8.0
20
1.8
1.6
VGS = 4.5 V
ID = 4.0 A
1.4
1.2
1.0
0.8
0.6
50
25
25
50
75
100
125

Temperature
150
MGSF3442VT1
20
0.20
TJ = 150C
ID = 4.0 A
TJ = 25C
10
0.12
0.08
0.04
0
1.0
0.25
0.50
0.75
1.00
1.25
1.50
2.0
4.0
6.0
8.0

0.2
20
0.1
16
POWER (W)
0.16
ID = 250 A
0.1
12
8.0
0.2
4.0
0.3
0.4
50
0
25
25
50
75
100
125
150
0.01
0.1
1.0
10
TJ, TEMPERATURE (C)
TIME (sec)

THERMAL IMPEDANCE
2.0
1.0
DUTY CYCLE = 0.5
0.2
0.1
NOTES:
PDM
0.1

2. PER UNIT BASE =
2. RthJA = 62.5C/W
4. SURFACE MOUNTED
0.05
0.02
t1
SINGLE PULSE
t2
0.01
0.0001
0.001
0.01
0.1
1.0
10
30
329
MOTOROLA
MGSF3442XT1


conserving traits.
NCHANNEL
ENHANCEMENTMODE
TMOS MOSFET
1 2 5 6
DRAIN

TSOP 6 PLASTIC
3
GATE

SOURCE
4

Rating
Symbol
Value
Unit
VDSS
20
Vdc
VGS
8.0
Vdc

ID
IDM
1.7
20
PD
400
mW
TJ, Tstg
55 to 150
RJA
300
C/W
TL
260
Device
Reel Size
Tape Width
Quantity
MGSF3442XT1
8 mm embossed tape
3000
MGSF3442XT3
13
8 mm embossed tape
10,000
330
MGSF3442XT1
Characteristic
Symbol
Min
Typ
Max
20
1.0
5.0
100
0.6
0.058
0.072
0.070
0.095
Unit
OFF CHARACTERISTICS
(VGS = 0 Vdc, ID = 10 A)
V(BR)DSS

IDSS
IGSS
Vdc
Adc
nAdc
VGS(th)

(VGS = 4.5 Vdc, ID = 1.7 A)
(VGS = 2.5 Vdc, ID = 1.3 A)
rDS(on)
Vdc
Ohms
Input Capacitance
(VDS = 5.0 V)
Ciss
90
Output Capacitance
(VDS = 5.0 V)
Coss
50
pF
(VDG = 5.0 V)
Crss
10
td(on)
8.0
20
tr
24
40
td(off)
36
60
tf
10
20
QT
nC
IS
1.0
Pulsed Current
ISM
5.0
Forward Voltage(2)
VSD
1.2
TurnOn Delay Time
Rise Time
TurnOff Delay Time
( DD = 10 Vdc, ID = 1.0 A,
(V
VGEN = 10 V, RL = 10 )
Fall Time
Gate Charge
ns

Continuous Current

331
MOTOROLA
MGSF3454VT1


conserving traits.
NCHANNEL
ENHANCEMENTMODE
TMOS MOSFET
1 2 5 6
DRAIN

TSOP 6 PLASTIC
3
GATE

SOURCE
4

Rating
Symbol
Value
Unit
VDSS
30
Vdc
VGS
20
Vdc

ID
IDM
4.2
20
PD
2.0
TJ, Tstg
55 to 150
RJA
62.5
C/W
TL
260
5 sec
Device
Reel Size
Tape Width
Quantity
MGSF3454VT1
8 mm embossed tape
3000
MGSF3454VT3
13
8 mm embossed tape
10,000
332
MGSF3454VT1
Characteristic
Symbol
Min
Typ
Max
30
1.0
25
100
1.0
0.05
0.07
0.065
0.095
Unit
OFF CHARACTERISTICS
(VGS = 0 Vdc, ID = 10 A)
V(BR)DSS

IDSS
GateBody Leakage Current (VGS = 20 Vdc, VDS = 0)
IGSS
Vdc
Adc
nAdc
VGS(th)

(VGS = 10 Vdc, ID = 4.2 A)
(VGS = 4.5 Vdc, ID = 3.4 A)
rDS(on)
Vdc
Ohms
Input Capacitance
(VDS = 5.0 V)
Ciss
90
Output Capacitance
(VDS = 5.0 V)
Coss
50
pF
(VDG = 5.0 V)
Crss
10
td(on)
10
20
tr
15
30
td(off)
20
35
tf
10
20
QT
15
nC
IS
1.0
Pulsed Current
ISM
5.0
Forward Voltage(2)
VSD
1.2
TurnOn Delay Time
Rise Time
TurnOff Delay Time
( DD = 10 Vdc, ID = 1.0 A,
(V
VGEN = 10 V, RL = 10 )
Fall Time
Gate Charge
ns

Continuous Current

333
MGSF3454VT1
20
20
VGS = 10, 9, 8, 7, 6V
16
I D , DRAIN CURRENT (A)
TJ = 55C
5V
12
4V
25C
16
125C
12
4
3V
0
560
480
C, CAPACITANCE (pF)
0.12
VGS = 4.5 V
0.08
VGS = 10 V
Ciss
400
320
Coss
240
160
0.04
Crss
80
0
0
8
12
16
20
12
18
24
30
VDS DRAINTOSOURCE VOLTAGE (V)
Figure 3. OnResistance vs. Drain Current
1.75
10
RDS(on) , ONRESISTANCE (OHMS)
(NORMALIZED)
VDS = 15 V
ID = 4.2 A
2
0
0
1.5
3.0
4.5
6.0
334
0.16
0.20
R DS(on) , ONRESISTANCE (OHMS)
7.5
9.0
VGS = 10 V
ID = 4.2 A
1.50
1.25
1.00
0.75
50
25
0
25
50
75
100
125
150
Figure 6. OnResistance vs. Junction Temperature
MGSF3454VT1
0.20
10
I S , SOURCE CURRENT (A)
40
TJ = 150C
TJ = 25C
1
0
0.25
0.50
0.75
1.00
1.25
1.5
0.16
0.12
0.08
0.04
1.75
ID = 4.2 A
2
4
6
8
VGS GATETOSOURCE VOLTAGE (V)
Figure 8. OnResistance vs. GatetoSource Voltage
0.4
30
0.2
24
0.0
ID = 250 A
POWER (W)
10
0.2
18
12
0.4
6
0.6
0.8
50
25
25
50
75
100
125
150
0
0.01
0.10
TJ, TEMPERATURE (C)
1.00
TIME (sec)
10.00
NORMALIZED EFFECTIVE
TRANSIENT THERMAL IMPEDANCE
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
P(pk)
0.05
t1
0.02
0.01
1.0E04
t2
SINGLE PULSE
1.0E03
1.0E02
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
Square Wave Pulse Duration (sec)
335
MOTOROLA
MGSF3454XT1


conserving traits.
NCHANNEL
ENHANCEMENTMODE
TMOS MOSFET
1 2 5 6
DRAIN

TSOP 6 PLASTIC
3
GATE

SOURCE
4

Rating
Symbol
Value
Unit
VDSS
30
Vdc
VGS
20
Vdc

ID
IDM
1.75
20
PD
950
mW
TJ, Tstg
55 to 150
RJA
250
C/W
TL
260

Device Marking = 3G
Device
Reel Size
Tape Width
Quantity
MGSF3454XT1
8 mm embossed tape
3000
MGSF3454XT3
13
8 mm embossed tape
10,000
336
MGSF3454XT1
Characteristic
Symbol
Min
Typ
Max
30
1.0
25
100
1.0
0.05
0.07
0.065
0.095
Unit
OFF CHARACTERISTICS
(VGS = 0 Vdc, ID = 10 A)
V(BR)DSS

IDSS
IGSS
Vdc
Adc
nAdc
VGS(th)

(VGS = 10 Vdc, ID = 1.75 A)
(VGS = 4.5 Vdc, ID = 1.5 A)
rDS(on)
Vdc
Ohms
Input Capacitance
(VDS = 5.0 V)
Ciss
345
Output Capacitance
(VDS = 5.0 V)
Coss
215
pF
(VDG = 5.0 V)
Crss
140
td(on)
10
tr
15
td(off)
20
tf
10
QT
15
nC
IS
1.0
Pulsed Current
ISM
5.0
Forward Voltage(2)
VSD
1.2
TurnOn Delay Time
Rise Time
( DD = 10 Vdc, ID = 1.0 A,
(V
VGEN = 10 V, RL = 10 )
TurnOff Delay Time

Fall Time
Gate Charge
ns

Continuous Current


7.0
0.12
VGS = 4.5 V
ID , DRAIN CURRENT (AMPS)
6.0
4.0 V
5.0
4.0
3.5 V
3.0
2.0
3.0 V
1.0
2.5 V
2.25 V
TJ = 150C
0.10
VGS = 10 V
0.08
25C
0.06
55C
0.04
0
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0.02
9.0
10
1.0
2.0
3.0
4.0
5.0
6.0
7.0
337
MGSF3454XT1
1000
0.14
TJ = 150C
C, CAPACITANCE (pF)
0.16
0.12
VGS = 4.5 V
0.10
25C
0.08
55C
Ciss
Coss
Crss
100
VGS = 0 V
f = 1.0 MHz
TJ = 25C
0.06
0.04
10
0.5
1.0
1.5
2.5
2.0
3.0
12
16
20
24
1.4
VDS = 24 V
TJ = 25C
ID = 10 A
8.0
6.0
4.0
2.0
0
0
2.0
4.0
6.0
8.0
1.3
ID = 1.5 A
VGS = 4.5 V
1.2
1.1
1.0
0.9
0.8
0.7
0.6
10
5.0
55
45
95
145
QG, TOTAL GATE CHARGE (nC)

Temperature
1.6
10
ID = 6.4 A
VGS = 10 V
1.5
1.4
IS, SOURCE CURRENT (AMPS)
R DS(on) , ONRESISTANCE (NORMALIZED)
8.0
10
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
1.0
TJ = 150C
25C 55C
0.1
0.01
0.001
55
338
4.0
VGS , GATETOSOURCE VOLTAGE (VOLTS)
5.0
45
95
145
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VSD, SOURCETODRAIN VOLTAGE (VOLTS)

Temperature
MGSF3454XT1
2.0
0.5
1.8
0.4
V GS(th) (VOLTS)
1.6
0.3
0.2
ID = 1.75 A
ID = 250 A
1.4
1.2
1.0
0.1
0.8
0
0.6
0
1.0
2.0
3.0
4.0
6.0
5.0
7.0
8.0
9.0
10
25
50
25
50
75
100

125
150
20
POWER (WATTS)
16
12
8.0
4.0
0
0.1
0.01
1.0
10
100
TIME (sec)
1.0
DUTY CYCLE = 0.5
0.2
0.1
0.1
P(pk)
0.05
0.02
t1
t2
0.01
SINGLE PULSE
RJA(t) = r(t) RJA

PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TA = P(pk) RJA(t)
0.01
0.0001
0.001
0.01
0.1
1.0
10
100
1.0 k
339
MOTOROLA
MGSF3455VT1


conserving traits.
PCHANNEL
ENHANCEMENTMODE
TMOS MOSFET
1 2 5 6
DRAIN

TSOP 6 PLASTIC
3
GATE

SOURCE
4

Rating
Symbol
Value
Unit
VDSS
30
Vdc
VGS
20
Vdc

ID
IDM
3.5
20
PD
2.0
TJ, Tstg
55 to 150
RJA
62.5
C/W
TL
260
5 sec
Device
Reel Size
Tape Width
Quantity
MGSF3455VT1
8 mm embossed tape
3000
MGSF3455VT3
13
8 mm embossed tape
10,000
340
MGSF3455VT1
Characteristic
Symbol
Min
Typ
Max
30
1.0
5.0
100
1.0
0.080
0.134
0.100
0.190
Unit
OFF CHARACTERISTICS
(VGS = 0 Vdc, ID = 10 A)
V(BR)DSS

IDSS
IGSS
Vdc
Adc
nAdc
VGS(th)

(VGS = 10 Vdc, ID = 3.5 A)
(VGS = 4.5 Vdc, ID = 2.5 A)
rDS(on)
Vdc
Ohms
Input Capacitance
(VDS = 5.0 V)
Ciss
90
Output Capacitance
(VDS = 5.0 V)
Coss
50
pF
(VDG = 5.0 V)
Crss
10
td(on)
10
20
tr
15
30
td(off)
20
35
tf
10
20
QT
3000
pC
IS
1.0
Pulsed Current
ISM
5.0
Forward Voltage(2)
VSD
1.2
TurnOn Delay Time
Rise Time
TurnOff Delay Time
( DD = 15 Vdc, ID = 1.0 A,
(V
VGEN = 10 V, RL = 10 )
Fall Time
Gate Charge
ns

Continuous Current

341
MGSF3455VT1
20
20
TJ = 55C
6V
16
VGS = 10, 9, 8, 7 V
5V
12
4V
25C
16
125C
12
4
3V
0
580
Ciss
C, CAPACITANCE (pF)
0.18
VGS = 4.5 V
0.12
VGS = 10 V
420
340
260
Coss
180
0.06
Crss
100
20
0
8
12
16
20
12
18
24
30
1.60
10
VDS = 15 V
ID = 3.5 A

(NORMALIZED)
500
2
0
0
1.5
3.0
4.5
342
0.24
0.30
6.0
1.45
VGS = 10 V
ID = 3.5 A
1.30
1.15
1.00
0.85
0.7
50
25
0
25
50
75
100
125
150
MGSF3455VT1
0.40
20
10
TJ = 150C
TJ = 25C
0.32
0.24
0.16
0.08
0
1
0
0.25
0.50
0.75
1.00
1.25
1.5
ID = 3.5 A
1.75
10
0.60
30
0.45
24
ID = 250 A
0.30
POWER (W)
0.15
18
12
0.0
6
0.15
0.3
50
25
25
50
75
100
TJ, TEMPERATURE (C)
125
150
0
0.01
0.10
1.00
10.00
TIME (sec)
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
P(pk)
0.05
t1
0.02
0.01
1.0E04
t2
SINGLE PULSE
1.0E03
1.0E02
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
343
MOTOROLA
MGSF3455XT1


conserving traits.
PCHANNEL
ENHANCEMENTMODE
TMOS MOSFET
1 2 5 6
DRAIN

TSOP 6 PLASTIC
3
GATE

SOURCE
4

Rating
Symbol
Value
Unit
VDSS
30
Vdc
VGS
20
Vdc

ID
IDM
1.45
10
PD
400
mW
TJ, Tstg
55 to 150
RJA
300
C/W
TL
260
Device
Reel Size
Tape Width
Quantity
MGSF3455XT1
8 mm embossed tape
3000
MGSF3455XT3
13
8 mm embossed tape
10,000
344
MGSF3455XT1
Characteristic
Symbol
Min
Typ
Max
30
1.0
5.0
100
1.0
0.080
0.134
0.100
0.190
Unit
OFF CHARACTERISTICS
(VGS = 0 Vdc, ID = 10 A)
V(BR)DSS

IDSS
IGSS
Vdc
Adc
nAdc
VGS(th)

(VGS = 10 Vdc, ID = 1.45 A)
(VGS = 4.5 Vdc, ID = 1.2 A)
rDS(on)
Vdc
Ohms
Input Capacitance
(VDS = 5.0 V)
Ciss
90
Output Capacitance
(VDS = 5.0 V)
Coss
50
pF
(VDG = 5.0 V)
Crss
10
td(on)
10
20
tr
15
30
td(off)
20
35
tf
10
20
QT
3000
pC
IS
1.0
Pulsed Current
ISM
5.0
Forward Voltage(2)
VSD
0.85
TurnOn Delay Time
Rise Time
TurnOff Delay Time
( DD = 15 Vdc, ID = 1.0 A,
(V
VGEN = 10 V, RL = 10 )
Fall Time
Gate Charge
ns

Continuous Current

345
MOTOROLA
MMBD1000LT1
MMBD2000T1
MMBD3000T1
MMSD1000T1
Switching Diode
This switching diode has the following features:
Very Low Leakage ( 500 pA) promotes extended battery life by decreasing energy waste
Offered in four Surface Mount package types

Available in 8 mm Tape and Reel in quantities of 3,000
Applications
MMBD1000LT1
ESD Protection
Reverse Polarity Protection

Steering Logic
1
2
MediumSpeed Switching

SOT-23 (TO-236AB)
3
CATHODE
1
ANODE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
VR
30
Vdc
Peak Forward Current
IF
200
mAdc
IFM
(surge)
500
mA
Peak Forward Surge Current
MMBD2000T1
3
1
2

SC70/SOT323
DEVICE MARKING
3
CATHODE
MMBD1000LT1 = AY
MMBD2000T1 = DH
MMBD3000T1 = XP
MMSD1000T1 = 4K
MMBD3000T1
Characteristic
Symbol

TA = 25C
MMBD1000LT1, MMBD3000T1,
MMSD1000T1
MMBD2000T1
Derate above 25C MMBD1000LT1, MMBD3000T1,
MMSD1000T1
MMBD2000T1
PD

MMSD1000T1
MMBD2000T1
RJA
1
ANODE
Max
Unit
mW
2
1
225
150
1.8
CASE 318D-04, STYLE 2

SC59
mW/C
1.2
3
CATHODE
2
ANODE
C/W
556
MMSD1000T1
833
TJ, Tstg
55 to +150
(1) Device mounted on a FR-4 glass epoxy printed circuit board using the minimum
recommended footprint.
C
1

SOD123
1
CATHODE
2
ANODE
REV 1
346
MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1

Characteristic
Symbol
Min
Max
Unit
V(BR)
30
Reverse Voltage Leakage Current (VR = 75 V)
IR
500
pA
Forward Voltage (IF = 1.0 mA)

Forward Voltage (IF = 10 mA)
VF
850
950
mV
Diode Capacitance (VR = 0 V, f = 1.0 MHz)
CD
2.0
pF
Reverse Recovery Time (IF = IR = 10 mA) (Figure 1)
trr
3.0
OFF CHARACTERISTICS
Reverse Breakdown Voltage (IBR = 100 A)
820
+10 V
2k
100 H
0.1 F
tr
IF
0.1 F
tp
IF
trr
10%
DUT
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
90%
IR
VR
INPUT SIGNAL
iR(REC) = 1 mA
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp trr
Figure 1. Recovery Time Equivalent Test Circuit
347
MOTOROLA
MMBD1005LT1
MMBD2005T1
MMBD3005T1
Switching Diode
Very Low Leakage ( 500 pA) promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
contingent upon the other diode being in a nonforwardbiased condition.
MMBD1005LT1

Applications
ESD Protection
ANODE
3
CATHODE
1
2
CATHODE
Steering Logic
3
1
2

SOT-23 (TO-236AB)
MMBD2005T1
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VR
30
Vdc
IF
200
mAdc
IFM
(surge)
500
mA
1
2

SC70/SOT323
DEVICE MARKING
MMBD3005T1
MMBD1005LT1 = A3
MMBD2005T1 = DI
MMBD3005T1 = XQ
Characteristic
Symbol

TA = 25C
MMBD1005LT1, MMBD3005T1
MMBD2005T1
Derate above 25C MMBD1005LT1, MMBD3005T1
MMBD2005T1
PD

MMBD2005T1
RJA
Max
2
1
mW
225
150
1.8
1.2
TJ, Tstg
Unit

SC59
mW/C
C/W
556
833
55 to +150
REV 1
348
MMBD1005LT1 MMBD2005T1 MMBD3005T1

Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
V(BR)
30
Reverse Voltage Leakage Current (VR = 75 V)(2)
IR
500
pA

VF
850
950
mV
CD
2.0
pF
trr
3.0
(2) Guaranteed leakage limit is for each diode in the pair contingent upon the other diode being
in a nonforwardbiased condition.
820
+10 V
2k
100 H
0.1 F
tr
IF
0.1 F
tp
IF
trr
10%
DUT
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
90%
IR
VR
INPUT SIGNAL
iR(REC) = 1 mA
OUTPUT PULSE
at iR(REC) = 1 mA)
Notes: 3. tp trr
349
MOTOROLA
MMBD1010LT1
MMBD2010T1
MMBD3010T1
Switching Diode
MMBD1010LT1

Applications
ANODE
1
ESD Protection
3
CATHODE
Steering Logic
2
ANODE
Symbol
Value

SOT-23 (TO-236AB)
Unit
VR
30
Vdc
IF
200
mAdc
IFM
(surge)
500
mA
MMBD2010T1
MAXIMUM RATINGS
Rating
3
1
2

SC70/SOT323
DEVICE MARKING
MMBD1010LT1 = A5
MMBD2010T1 = DP
MMBD3010T1 = XS
MMBD3010T1
Characteristic
Symbol

TA = 25C
MMBD2010T1
MMBD2010T1
PD

MMBD2010T1
RJA
Max
mW
225
150
1.8
1.2
TJ, Tstg
Unit
2
1
mW/C

SC59
C/W
556
833
55 to +150
REV 1
350

Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
V(BR)
30
IR
500
pA

VF
850
950
mV
CD
2.0
pF
trr
3.0
820
+10 V
2k
100 H
0.1 F
tr
IF
0.1 F
tp
IF
trr
10%
DUT
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
90%
IR
VR
INPUT SIGNAL
iR(REC) = 1 mA
OUTPUT PULSE
at iR(REC) = 1 mA)
Notes: 3. tp trr
351
MOTOROLA


MMBF0201NLT1
NCHANNEL
ENHANCEMENTMODE
TMOS MOSFET
rDS(on) = 1.0 OHM
3 DRAIN
3
1
2
1
GATE

Life

SOT23 (TO236AB)
2 SOURCE

Rating
Symbol
Value
Unit
VDSS
20
Vdc
VGS
20
Vdc

ID
ID
IDM
300
240
750
mAdc
PD
225
mW
TJ, Tstg
55 to 150
RJA
556
C/W
TL
260
DEVICE MARKING
N1
(1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.
Reel Size
Tape Width
Quantity
MMBF0201NLT1
Device
12 mm embossed tape
3000
MMBF0201NLT3
13
12 mm embossed tape
10,000
REV 1
352
MMBF0201NLT1
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
20
Vdc
1.0
10
OFF CHARACTERISTICS
(VGS = 0 Vdc, ID = 10 A)
Adc

IDSS
IGSS
100
nAdc

VGS(th)
1.0
1.7
2.4
Vdc

(VGS = 10 Vdc, ID = 300 mAdc)
rDS(on)
0.75
1.0
1.0
1.4
gFS
450
mMhos
pF
Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc)
Ohms
Input Capacitance
(VDS = 5.0 V)
Ciss
45
Output Capacitance
(VDS = 5.0 V)
Coss
25
(VDG = 5.0 V)
Crss
5.0
td(on)
2.5
tr
2.5
td(off)
15
tf
0.8
QT
1400
pC
IS
0.3
Pulsed Current
ISM
0.75
Forward Voltage(2)
VSD
0.85
TurnOn Delay Time
Rise Time
TurnOff Delay Time
((VDD = 15 Vdc, ID = 300 mAdc,

RL = 50 )
Fall Time
ns

Continuous Current

353
MMBF0201NLT1
1.0
1.0
0.8
0.6
0.4
125C
0.2
55C
25C
ONRESISTANCE (OHMS)
VGS = 4 V
0.6
VGS = 10, 9, 8, 7, 6 V
0.4
0.2
VGS = 3 V
0.3
0.9
1.2
0.9
VGS = 4.5 V
0.6
VGS = 10 V
0
0.2
0.4
0.6
0.8
2.0
1.5
1.0
0.5
5
10
15
1.10
14
1.05
ID = 250 A
354
VGS(th) , NORMALIZED
1.00
VDS = 16 V
ID = 300 mA
10
20

16
12
1.4
2.4
8
6
4
0.95
0.90
0.85
0.80
0.75
0.70
2
0
0
1.2
0.3
0.6
1.5
0.8
VGS = 5 V
0.65
160
450
2000
3400
0.60
25
25
50
75
100
125
Qg, TOTAL GATE CHARGE (pC)
TEMPERATURE (C)
Figure 6. Threshold Voltage Variance

Over Temperature
150
MMBF0201NLT1
100
1.6
VGS = 10 V @ 300 mA
80
C, CAPACITANCE (pF)
RDS(on) , NORMALIZED (OHMS)
1.8
1.4
1.2
VGS = 4.5 V @ 100 mA
1.0
60
Ciss
40
Coss
20
0.8
Crss
0.6
50
25
25
50
75
100
125
150
10
15

20
SOURCE CURRENT (AMPS)
10
1.0
0.1
125C
25C
55C
0.01
0.001
0.3
0.6
0.9
1.2
SOURCETODRAIN FORWARD VOLTAGE (VOLTS)
1.4
Figure 9. SourcetoDrain Forward Voltage

versus Continuous Current (IS)
355
MOTOROLA

Life
MMBF0202PLT1
PCHANNEL
ENHANCEMENTMODE
TMOS MOSFET
rDS(on) = 1.4 OHM
3 DRAIN
3
1
2
1
GATE

SOT23 (TO236AB)
2 SOURCE

Symbol
Value
Unit
VDSS
20
Vdc
VGS
20
Vdc

ID
ID
IDM
300
240
750
mAdc
PD
225
mW
TJ, Tstg
55 to 150
RJA
625
C/W
TL
260
Rating
DEVICE MARKING
P3
Reel Size
Tape Width
Quantity
MMBF0202PLT1
Device
12 mm embossed tape
3000
MMBF0202PLT3
13
12 mm embossed tape
10,000
(Replaces MMBF0202P/D)
356
MMBF0202PLT1
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
20
Vdc
1.0
10
OFF CHARACTERISTICS
(VGS = 0 Vdc, ID = 10 A)
Adc

IDSS
IGSS
100
nAdc

VGS(th)
1.0
1.7
2.4
Vdc

rDS(on)
0.9
2.0
1.4
3.5
gFS
600
mMhos
pF
Ohms
Input Capacitance
(VDS = 5.0 V)
Ciss
50
Output Capacitance
(VDS = 5.0 V)
Coss
45
(VDG = 5.0 V)
Crss
20
td(on)
2.5
tr
1.0
td(off)
16
tf
8.0
QT
2700
pC
IS
0.3
Pulsed Current
ISM
0.75
Forward Voltage(2)
VSD
1.5
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 15 Vdc,
RL = 75 ,
ID = 200 mAdc,
mAdc
VGEN = 10 V, RG = 6.0 )
Fall Time
(VDS = 16 V, VGS = 10 V,
ID = 200 mA)
ns

Continuous Current

357
MMBF0202PLT1
1.0
1.0
5V
0.8
25C
125C
0.6
0.4
0.2
ONRESISTANCE (OHMS)
0.6
0.4
3V
0.2
VGS = 4.5 V
1
VGS = 10 V
0
100
200
300
500
400
4
200 mA
3
2
50 mA
1
0
0
5
10
15
20

16
1.20
1.15
14
ID = 200 mA
2160
10
8
VDS = 10 V
VDS = 16 V
6
590
4
ID = 250 A
1.10
1.05
1.00
0.95
0.90
0.85
2
230
690
2270
358
0
0
12
4V
VGS = 10, 9, 8, 7, 6 V
0.8
TC = 55C
3500
0.80
50
25
50
75
25
TEMPERATURE (C)
100
125
150

Over Temperature
MMBF0202PLT1
1.30
140
120
VGS = 4.5 V @ 50 mA
C, CAPACITANCE (pF)
1.25
1.20
1.15
1.10
1.05
VGS = 10 V @ 200 mA
1.00
0.95
100
80
60
Ciss
40
Coss
0.90
20
0.85
0.80
50
Crss
0
25
25
50
75
100
125
150
10
15

20
10
1.0
TJ = 150C
55C
0.1
25C
0.01
0.001
0
3
4
1
2
4.5

359
MOTOROLA
MMBF2201NT1


N CHANNEL
ENHANCEMENT MODE
TMOS MOSFET
rDS(on) = 1.0 OHM
3 DRAIN
CASE 41902, Style 7

SC70/SOT323
1
GATE

Life
2 SOURCE
Miniature SC70 / SOT 323 Surface Mount Package Saves

Board Space

Rating
Symbol
Value
Unit
VDSS
20
Vdc
VGS
20
Vdc

ID
ID
IDM
300
240
750
mAdc

Derate above 25C
PD
150
1.2
mW
mW/C
TJ, Tstg
55 to 150
RJA
833
C/W
TL
260
DEVICE MARKING
N1
Device
Reel Size
Tape Width
Quantity
MMBF2201NT1
8 mm embossed tape
3000
MMBF2201NT3
13
8 mm embossed tape
10,000
REV 1
360
MMBF2201NT1
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
20
Vdc
1.0
10
OFF CHARACTERISTICS
(VGS = 0 Vdc, ID = 10 A)
Adc

IDSS
IGSS
100
nAdc

VGS(th)
1.0
1.7
2.4
Vdc

rDS(on)
0.75
1.0
1.0
1.4
gFS
450
mMhos
pF
Ohms
Input Capacitance
(VDS = 5.0 V)
Ciss
45
Output Capacitance
(VDS = 5.0 V)
Coss
25
(VDG = 5.0 V)
Crss
5.0
td(on)
2.5
tr
2.5
td(off)
15
tf
0.8
QT
1400
pC
IS
0.3
Pulsed Current
ISM
0.75
Forward Voltage(2)
VSD
0.85
TurnOn Delay Time
Rise Time
TurnOff Delay Time

RL = 50 )
Fall Time
ns

Continuous Current

1.6
1.0
1.4
VGS = 4 V
0.8
RDS , ON RESISTANCE (OHMS)
0.9
0.7
0.6
VGS = 3.5 V
0.5
0.4
VGS = 3 V
0.3
0.2
VGS = 2.5 V
0.1
1
4
7
8
2
3
5
6
VDS, DRAIN SOURCE VOLTAGE (VOLTS)
VGS = 4.5 V
1.0
ID = 100 mA
0.8
VGS = 10 V
0.6
ID = 300 mA
0.4
0.2
0
0
1.2
10
Figure 1. Typical Drain Characteristics
0
60 40 20
20 40 60 80
TEMPERATURE (C)
100 120 140 160
Figure 2. On Resistance versus Temperature
361
MMBF2201NT1
1.2
10
ID = 300 mA
VGS = 4.5 V
1.0
0.8
0.6
VGS = 10 V
0.4
0.2
0
0
0
3
4
5
6
7
8
GATE SOURCE VOLTAGE (VOLTS)
10
Figure 3. On Resistance versus Gate Source

Voltage
0.1
0.2
0.5
0.3
0.4
0.6
0.8
Figure 4. On Resistance versus Drain Current
45
1.0
VGS = 0 V
F = 1 mHz
40
35
C, CAPACITANCE (pF)
I S , SOURCE CURRENT (AMPS)
0.7
0.1
0.01
30
25
20
Ciss
15
Coss
10
Crss
5
0
0.001
0
0.1
0.2 0.3 0.4
0.5 0.6
0.7 0.8 0.9
VSD, SOURCE DRAIN FORWARD VOLTAGE (VOLTS)
1.0
4
8
12
16
6
10
14
Figure 5. Source Drain Forward Voltage
18
20
Figure 6. Capacitance Variation
1.0
0.9
0.8
55
0.7
25
150
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VGS, GATE SOURCE VOLTAGE (VOLTS)
4.0
4.5
362
MOTOROLA
MMBF2202PT1

PCHANNEL
ENHANCEMENTMODE
TMOS MOSFET
rDS(on) = 2.2 OHM
3 DRAIN
1
GATE

Life
Miniature SC70/SOT323 Surface Mount Package Saves
Board Space
CASE 41902, STYLE 7

SC70/SOT323
2 SOURCE

Symbol
Value
Unit
VDSS
20
Vdc
VGS
20
Vdc

ID
ID
IDM
300
240
750
mAdc

Derate above 25C
PD
150
1.2
mW
mW/C
TJ, Tstg
55 to 150
RJA
833
C/W
TL
260
Rating
DEVICE MARKING
P3
Reel Size
Tape Width
Quantity
MMBF2202PT1
Device
8 mm embossed tape
3000
MMBF2202PT3
13
8 mm embossed tape
10,000
REV 1
363
MMBF2202PT1
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
20
Vdc
1.0
10
OFF CHARACTERISTICS
(VGS = 0 Vdc, ID = 10 A)
Adc

IDSS
IGSS
100
nAdc

VGS(th)
1.0
1.7
2.4
Vdc

rDS(on)
1.5
2.0
2.2
3.5
gFS
600
mMhos
pF
Ohms
Input Capacitance
(VDS = 5.0 V)
Ciss
50
Output Capacitance
(VDS = 5.0 V)
Coss
45
(VDG = 5.0 V)
Crss
20
td(on)
2.5
tr
1.0
td(off)
16
tf
8.0
QT
2700
pC
IS
0.3
Pulsed Current
ISM
0.75
Forward Voltage(2)
VSD
1.5
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 15 Vdc,
RL = 75 ,
ID = 200 mAdc,
mAdc
VGEN = 10 V, RG = 6.0 )
Fall Time
(VDS = 16 V, VGS = 10 V,
ID = 200 mA)
ns

Continuous Current

364
MMBF2202PT1
4.0
rDS(on) , ON RESISTANCE (OHMS)
10
ID = 200 mA
10
3.5
VGS = 4.5 V
ID = 50 mA
3.0
2.5
2.0
VGS = 10 V
ID = 200 mA
1.5
1.0
0.5
0
40
20
20
40
60
80
100 120
140
160
VGS, GATESOURCE VOLTAGE (VOLTS)
TEMPERATURE (C)
Figure 1. On Resistance versus GateSource Voltage
365
MMBF2202PT1
1.0
0.9
5
4
I D, DRAIN CURRENT (AMPS)
VGS = 4.5 V
3
VGS = 10 V
2
1
0.8
0.7
55
0.6
0.5
150
25
0.4
0.3
0.2
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.5
1.0
1.5
2.0 2.5
3.0
3.5 4.0
5.5
6.0
10
ID(on), DRAIN CURRENT (AMPS)
0.8
25
0.1
150
0.01
VGS = 5 V
0.7
0.6
VGS = 4.5 V
0.5
VGS = 4 V
0.4
0.3
VGS = 3.5 V
0.2
VGS = 3 V
0.1
0.001
4.5 5.0
1
IS , SOURCE CURRENT (AMPS)
0.5
1.0
1.5
2.0
2.5
VSD, SOURCEDRAIN FORWARD VOLTAGE (VOLTS)
VDS, DRAINSOURCE VOLTAGE (VOLTS)
Figure 5. SourceDrain Forward Voltage
Figure 6. On Region Characteristics
50
45
VGS = 0 V
f = 1 MHz
C, CAPACITANCE (pF)
40
35
30
25
20
Ciss
15
Coss
10
5
0
Crss
0
10
12
14
16
18
20
366
MOTOROLA
MMBT1010LT1
MSD1010T1
Low Saturation Voltage

PNP Silicon Driver Transistors

PNP GENERAL
PURPOSE DRIVER
TRANSISTORS
SURFACE MOUNT
This PNP Silicon Epitaxial Planar Transistor is designed to conserve energy

in general purpose driver applications. This device is housed in the SOT-23 and
SC59 packages which are designed for low power surface mount
applications.
Low VCE(sat), < 0.1 V at 50 mA
Applications
LCD Backlight Driver

Annunciator Driver
General Output Device Driver

Symbol
Value
Unit
V(BR)CBO
45
Vdc
V(BR)CEO
15
Vdc
V(BR)EBO
5.0
Vdc
IC
100
mAdc
Rating
CASE 31808, STYLE 6

SOT-23
3
2
1
DEVICE MARKING
MMBT1010LT1 = GLP
MSD1010T1 = GLP

SC-59
Rating
Symbol
Max
Unit
Power Dissipation
TA = 25C
Derate above 25C
PD(1)
250
mW
1.8
mW/C
RJA
556
C/W
TJ
150
Tstg
55 ~ + 150
COLLECTOR
BASE
EMITTER
Symbol
Condition
Min
Max
Unit
Characteristic
V(BR)CEO
IC = 10 mA, IB = 0
15
Vdc
V(BR)EBO
IE = 10 A, IE = 0
5.0
Vdc
ICBO
VCB = 20 V, IE = 0
0.1
ICEO
hFE1(2)
VCE = 10 V, IB = 0
100

DC Current Gain
VCE = 5 V, IC = 100 mA
300
600
VCE(sat)(2)
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
IC = 100 mA, IB = 10 mA
0.1
0.1
0.19
Vdc
VBE(sat)(2)
IC = 100 mA, IB = 10 mA
1.1
Vdc
(1) Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
(2) Pulse Test: Pulse Width 300 s, D.C. 2%.
REV 2
367
368
Section 4
SmallSignal FieldEffect
In Brief . . .
The data sheets on the following pages are designed to
emphasize those FETs that by virtue of widespread industry
use, ease of manufacture, and low relative cost, merit first
consideration for new equipment design.
CAUTION:
Static electricity is a surface phenomenon which most
commonly occurs when two dissimilar materials come into
contact and then separate. Electro Static Discharge (ESD)
damage of semiconductor components by operating personnel is quickly becoming a very prominent and significant
problem. From simple bipolar designs to sensitive MOSFET
structures, ESD has its unforgiving effect of degradation or
destruction.
Motorola believes it is important to extend any emphasizing note of cautiousness when handling and testing ANY
FET product. Precautions include, but are not limited to, the
implementation of static safe workstations and proper handling techniques. Additionally, it is very important to keep
FET devices in their antistatic shipping containers and away
from staticgenerating materials.
CASE 29-05
(TO-226AE)
1 WATT TO-92
CASE 29-04
(TO-226AA)
TO-92
3
3
1
2
2
CASE 318-08
(TO-236AB)
SOT-23
CASE 318D-04
SC59
6
4
1
1
3
CASE 318G-02
TSOP6
CASE 318E-04
(TO-261AA)
SOT-223
3
1
2
1
CASE 419-02
SC70/SOT323
CASE 425-04
SOD123
41

SOT-23 and SOT-223 packages are available only in Tape and Reel. Use the appropriate suffix indicated
below to order any of the SOT-23 and SOT-223 packages. (See Section 6 on Packaging for additional
information).
SOT-23:

SOT-223:


TO-92:

Reel.
*requirements.

The SOT-23 package has a device marking and a date code etched on the device. The generic
example below depicts both the device marking and a representation of the date code that appears on the
SOT-23 package.
ABC D
42
MOTOROLA
TMOS FET Transistor
2N7000
NChannel Enhancement
3 DRAIN
2
GATE
1 SOURCE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain Source Voltage
VDSS
60
Vdc
DrainGate Voltage (RGS = 1.0 M)
VDGR
60
Vdc
GateSource Voltage
Continuous
Nonrepetitive (tp 50 s)
VGS
VGSM
20
40
Vdc
Vpk
ID
IDM
200
500
PD
350
2.8
mW
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit
RJA
357
C/W
TL
300
Drain Current
Continuous
Pulsed
1
2
CASE 2904, STYLE 22

TO92 (TO226AA)
mAdc

Derate above 25C
Characteristic
Maximum Lead Temperature for
Soldering Purposes, 1/16 from case
for 10 seconds

Symbol
Min
Max
Unit
V(BR)DSS
60
Vdc
1.0
1.0
Adc
mAdc
IGSSF
10
nAdc

VGS(th)
0.8
3.0
Vdc
Static DrainSource OnResistance

(VGS = 10 Vdc, ID = 0.5 Adc)
rDS(on)
5.0
6.0
DrainSource OnVoltage
(VGS = 10 Vdc, ID = 0.5 Adc)
VDS(on)
2.5
0.45
Characteristic
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0, ID = 10 Adc)
(VDS = 48 Vdc, VGS = 0)
(VDS = 48 Vdc, VGS = 0, TJ = 125C)
GateBody Leakage Current, Forward
(VGSF = 15 Vdc, VDS = 0)
IDSS
Ohm
Vdc

REV 3
43
2N7000
Symbol
Min
Max
Unit
OnState Drain Current

(VGS = 4.5 Vdc, VDS = 10 Vdc)
Id(on)
75
mAdc
(VDS = 10 Vdc, ID = 200 mAdc)
gfs
100
mhos
pF
Characteristic
ON CHARACTERISTICS(1) (continued)
Input Capacitance
(VDS = 25 V
V, VGS = 0,
0
f = 1.0 MHz)
Output Capacitance
Reverse Transfer Capacitance
Ciss
60
Coss
25
Crss
5.0
ton
10
toff
10
TurnOn Delay Time
TurnOff Delay Time
((VDD = 15 V, ID = 500 mA,

Rgen = 25 ohms, RL = 25 ohms)
ns
2.0
1.0
VDS = 10 V
TA = 25C
1.6
VGS = 10 V
1.4
9V
1.2
1.8
8V
1.0
7V
0.8
6V
0.6
0.4
5V
0.2
4V
3V
1.0
2.0 3.0 4.0 5.0

6.0
7.0 8.0
9.0
0.8
125C
0.6
0.4
0.2
10
2.4
2.2
1.8
VGS = 10 V
ID = 200 mA
1.6
1.4
1.2
1.0
0.8
0.6
0.4
60
20
+ 20
+ 60
T, TEMPERATURE (C)
+ 100
Figure 3. Temperature versus Static

DrainSource OnResistance
44
1.0
2.0 3.0 4.0

5.0
6.0
7.0 8.0
9.0
10
VGS(th) , THRESHOLD VOLTAGE (NORMALIZED)
r DS(on) , STATIC DRAINSOURCE ONRESISTANCE

(NORMALIZED)
Figure 1. Ohmic Region
2.0
25C
55C
+ 140
1.2
1.05
VDS = VGS
ID = 1.0 mA
1.1
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
60
20
+ 20
+ 60
T, TEMPERATURE (C)
+ 100
+ 140
Figure 4. Temperature versus Gate

Threshold Voltage
MOTOROLA
TMOS FET Transistor

2N7002LT1
3 DRAIN
1
GATE
3
2 SOURCE
1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
60
Vdc
VDGR
60
Vdc
ID
ID
IDM
115
75
800
mAdc
VGS
VGSM
20
40
Vdc
Vpk
Drain Current Continuous TC = 25C(1)

Drain Current Continuous TC = 100C(1)
Drain Current Pulsed(2)
GateSource Voltage
Continuous

SOT 23 (TO 236AB)
Characteristic
Total Device Dissipation FR5 Board,(3) TA = 25C
Derate above 25C
Derate above 25C
Symbol
Max
Unit
PD
225
1.8
mW
mW/C
RJA
556
C/W
PD
300
mW
2.4
mW/C
RJA
417
C/W
TJ, Tstg
55 to +150
DEVICE MARKING
2N7002LT1 = 702

Symbol
Min
Typ
Max
Unit
V(BR)DSS
60
Vdc
IDSS
1.0
500
Adc

(VGS = 20 Vdc)
IGSSF
100
nAdc
GateBody Leakage Current, Reverse

(VGS = 20 Vdc)
IGSSR
100
nAdc
Characteristic
OFF CHARACTERISTICS
(VGS = 0, ID = 10 Adc)
(VGS = 0, VDS = 60 Vdc)
1.
2.
3.
4.
TJ = 25C
TJ = 125C
The Power Dissipation of the package may result in a lower continuous drain current.
Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
FR5 = 1.0 x 0.75 x 0.062 in.
Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
REV 2
45
2N7002LT1
Symbol
Min
Typ
Max
Unit
VGS(th)
1.0
2.5
Vdc

(VDS 2.0 VDS(on), VGS = 10 Vdc)
ID(on)
500
mA
Static DrainSource OnState Voltage

VDS(on)
3.75
0.375
Static DrainSource OnState Resistance

(VGS = 10 V, ID = 500 mAdc)
TC = 25C
TC = 125C
(VGS = 5.0 Vdc, ID = 50 mAdc) TC = 25C
TC = 125C
rDS(on)
7.5
13.5
7.5
13.5
gFS
80
mmhos
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
50
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Coss
25
pF

(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Crss
5.0
pF
td(on)
30
ns
td(off)
40
ns
VSD
1.5
Vdc
IS
115
mAdc
ISM
800
mAdc
Characteristic
(VDS 2.0 VDS(on), ID = 200 mAdc)
Vdc
Ohms
TurnOn Delay Time
TurnOff Delay Time
( DD = 25 Vdc, ID
(V
500 mAdc,
RG = 25 , RL = 50 )
BODYDRAIN DIODE RATINGS

Diode Forward OnVoltage
(IS = 11.5 mAdc, VGS = 0 V)
Source Current Continuous
(Body Diode)
Source Current Pulsed
46
2N7002LT1
2.0
1.0
VDS = 10 V
TA = 25C
1.6
VGS = 10 V
1.4
9V
1.2
1.8
8V
1.0
7V
0.8
6V
0.6
0.4
5V
0.2
4V
3V
1.0
2.0 3.0 4.0 5.0

6.0
7.0 8.0
VDS, DRAN SOURCE VOLTAGE (VOLTS)
9.0
0.8
125C
0.6
0.4
0.2
10
2.4
2.2
1.8
VGS = 10 V
ID = 200 mA
1.6
1.4
1.2
1.0
0.8
0.6
0.4
60
20
+ 20
+ 60
T, TEMPERATURE (C)
1.0
2.0 3.0 4.0

5.0
6.0
7.0 8.0
9.0
10

(NORMALIZED)
2.0
25C
55C
+ 100
+ 140

1.2
1.05
VDS = VGS
ID = 1.0 mA
1.1
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
60
20
+ 20
+ 60
T, TEMPERATURE (C)
+ 100
+ 140

Threshold Voltage
47
MOTOROLA
TMOS Switching
BS107
BS107A
1 DRAIN
2
GATE
3 SOURCE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VDS
200
Vdc
VGS
VGSM
20
30
ID
IDM
250
500
PD
350
mW
TJ, Tstg
55 to 150

GateSource Voltage
Continuous
Drain Current
Continuous(1)
Pulsed(2)
1
2
Vdc
Vpk
CASE 2904, STYLE 30

TO92 (TO226AA)
mAdc

Derate above 25C
Temperature Range

Characteristic
Symbol
Min
Typ
Max
Unit
ZeroGateVoltage Drain Current (VDS = 130 Vdc, VGS = 0)
IDSS
30
nAdc
DrainSource Breakdown Voltage (VGS = 0, ID = 100 Adc)
V(BR)DSX
200
Vdc
IGSS
0.01
10
nAdc
Gate Threshold Voltage (ID = 1.0 mAdc, VDS = VGS)
VGS(Th)
1.0
3.0
Static DrainSource On Resistance

BS107 (VGS = 2.6 Vdc, ID = 20 mAdc)
BS107A (VGS = 10 Vdc)
(ID = 100 mAdc)
(ID = 250 mAdc)
rDS(on)
OFF CHARACTERISTICS
Gate Reverse Current (VGS = 15 Vdc, VDS = 0)
Vdc
Ohms
28
14
4.5
4.8
6.0
6.4

Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
60
pF

(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Crss
6.0
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Coss
30
pF
gfs
200
400
mmhos
TurnOn Time
ton
6.0
15
ns
TurnOff Time
toff
12
15
ns
1. The Power Dissipation of the package may result in a lower continuous drain current.
300 s, Duty Cycle
2.0%.
REV 1
48
BS107 BS107A
RESISTIVE SWITCHING
+25 V
TO SAMPLING SCOPE
50 INPUT
Vout
23
PULSE GENERATOR
20 dB
50 ATTENUATOR
Vin
40 pF
INPUT Vin
50%
PULSE WIDTH
50%
10%
200
10
180
VGS = 0 V
160
5.0
VGS = 10 V
C, CAPACITANCE (pF)
VDS , DRAINSOURCE VOLTAGE (VOLTS)
90%
Figure 1. Switching Test Circuit
250 mA
2.0
1.0
100 mA
0.5
140
120
100
Ciss
80
60
40
0.2
20
0.1
55
35
85 105
45
15 +5.0 25
65
125
145
Coss
Crss
40
10
20
30
Figure 3. On Voltage versus Temperature
0.8
0.7
0.7
0.6
10 V
VGS = 10 V
0.6
0.5
0.4
0.3
0.2
0.1
0
1.0
5.0 6.0 7.0 8.0

2.0 3.0 4.0
9.0
50
I D(on) , DRAIN CURRENT (AMPS)
ID(on) , DRAIN CURRENT (AMPS)
90%
10%
OUTPUT Vout
INVERTED
1M
10 V
toff
90%
50
50
ton
10
Figure 5. Transfer Characteristic
5.0 V
0.5
0.4
0.3
4.0 V
0.2
0.1
3.0 V
0
2.0
10
4.0
6.0 8.0
12
14
16
18
20
Figure 6. Output Characteristic
49
BS107 BS107A
0.7
10 V
0.6
0.5
5.0 V
0.4
0.3
4.0 V
0.2
0.1
3.0 V
1.0
2.0
3.0
4.0
5.0
Figure 7. Saturation Characteristic
410
MOTOROLA
TMOS FET Switching
BS170
1 DRAIN
2
GATE
3 SOURCE
MAXIMUM RATINGS
Rating
GateSource Voltage
Continuous
Drain Current(1)
Symbol
Value
Unit
VDS
60
Vdc
VGS
VGSM
20
40
Vdc
Vpk
ID
0.5
Adc
PD
350
mW
TJ, Tstg
55 to +150

Temperature Range
CASE 2904, STYLE 30

TO92 (TO226AA)

Characteristic
Symbol
Min
Typ
Max
Unit
IGSS
0.01
10
nAdc
V(BR)DSS
60
90
Vdc

VGS(Th)
0.8
2.0
3.0
Vdc

rDS(on)
1.8
5.0
ID(off)
0.5
gfs
200
mmhos
Ciss
60
pF
TurnOn Time
(ID = 0.2 Adc) See Figure 1
ton
4.0
10
ns
TurnOff Time
(ID = 0.2 Adc) See Figure 1
toff
4.0
10
ns
OFF CHARACTERISTICS
Gate Reverse Current
(VGS = 15 Vdc, VDS = 0)
(VGS = 0, ID = 100 Adc)
Drain Cutoff Current


Input Capacitance
(VDS = 10 Vdc, VGS = 0, f = 1.0 MHz)
300 s, Duty Cycle
2.0%.
REV 1
411
BS170
RESISTIVE SWITCHING
+25 V
ton
Vin
PULSE GENERATOR
50
125
20 dB
50 ATTENUATOR
40 pF
50
1.0 M
TO SAMPLING SCOPE
50 INPUT
Vout
OUTPUT
V
INVERTED out
toff
90%
10%
90%
50%
10%
INPUT
Vin
(Vin Amplititude 10 Volts)
2.0
VDS = VGS
ID = 1.0 mA
VGS(th), THRESHOLD VOLTAGE
2.0
1.6
PULSE
WIDTH
1.2
0.8
0.4
VGS = 10 V
1.6
9.0 V
8.0 V
1.2
7.0 V
6.0 V
0.8
5.0 V
0.4
4.0 V
0
50
100
0
50
150
Figure 3. VGS(th) Normalized versus Temperature
100
VGS = 10 V
9.0 V
1.6
VGS = 0 V
80
8.0 V
1.2
7.0 V
0.8
6.0 V
0.4
4.0
C, CAPACITANCE (pF)
2.0
1.0
2.0
3.0
VDS, DRAIN TOSOURCE VOLTAGE (VOLTS)
60
40
Ciss
20
5.0 V
Coss
4.0 V
Crss
0
20
10
30
412
40
10
20
30
40
50
60
Figure 6. Capacitance versus

DrainToSource Voltage
MOTOROLA
BSS84LT1

Part of the Greenline Portfolio of devices with energyconserving traits.
These miniature surface mount MOSFETs utilize Motorolas High
Cell Density, HDTMOS process. Reduced power loss conserves
energy, making this device ideal for use in small power management circuitry. Typical applications are dcdc converters, load
switching, power management in portable and batterypowered
products such as computers, printers, cellular and cordless
telephones.
1
PCHANNEL
ENHANCEMENTMODE
TMOS MOSFET
3 DRAIN
3
1
2

SOT23 (TO236AB)
GATE
Energy Efficient

2 SOURCE

Rating
Symbol
Value
Unit
VDSS
50
Vdc
VGS
20
Vdc

ID
IDM
130
520
mA
PD
225
mW
TJ, Tstg
55 to 150
RJA
556
C/W
TL
260
DEVICE MARKING
BSS84LT1 = PD
Device
Reel Size
Tape Width
Quantity
BSS84LT1
8mm embossed tape
3000
BSS84LT3
13
8mm embossed tape
10,000
REV 1
413
BSS84LT1
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
50
Vdc
0.1
15
60
OFF CHARACTERISTICS
Adc

IDSS
IGSS
60
Adc
GateSource Threaded Voltage

VGS(th)
0.8
2.0
Vdc

rDS(on)
5.0
10
Ohms
|yfs|
50
mS
(VDS = 5.0 Vdc)
Ciss
30
pF
Output Capacitance
(VDS = 5.0 Vdc)
Coss
10
(VDG = 5.0 Vdc)
Crss
5.0
td(on)
2.5
tr
1.0
td(off)
16
Transfer Admittance
Input Capacitance
TurnOn Delay Time
Rise Time
TurnOff Delay Time
((VDD = 15 Vdc, ID = 2.5 Adc,

RL = 50 )
Fall Time
ns
tf
8.0
QT
6000
pC
IS
0.130
Pulsed Current
ISM
0.520
Forward Voltage(2)
VSD
2.5
Gate Charge
Continuous Current


0.6
0.5
25C
55C
150C
VGS = 3.5 V
TJ = 25C
0.45
0.5
VDS = 10 V
3.25 V
0.4
0.35
0.4
0.3
3.0 V
0.25
0.3
0.2
0.2
2.75 V
0.15
0.1
2.5 V
0.1
2.25 V
0.05
0
1.5
2
2.5
3
3.5
414
10
9
VGS = 4.5 V
8
150C
7
6
25C
5
4
55C
3
2
0
0.1
0.2
0.3
0.4
0.5
0.6
BSS84LT1
7
150C
VGS = 10 V
6.5
6
5.5
5
4.5
4
25C
3.5
3
55C
2.5
2
0
0.2
0.1

(NORMALIZED)
2
VGS = 10 V
ID = 0.52 A
1.6
1.4
VGS = 4.5 V
ID = 0.13 A
1.2
1
0.8
0.6
55
45
0.4
0.6
0.5
1.8
0.3
95
6
5
4
ID = 0.5 A
3
2
1
0
145
VDS = 40 V
TJ = 25C
1000
500
1500
2000
TJ = 150C
0.1
25C
55C
0.01
0.001
0.5
1.0
1.5
2.0
2.5
3.0
415
MOTOROLA
TMOS FET Transistor
BSS123LT1
NChannel
3 DRAIN
1
GATE
2 SOURCE
1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
100
Vdc
GateSource Voltage
Continuous
VGS
VGSM
20
40
Vdc
Vpk
ID
IDM
0.17
0.68
Drain Current
Continuous(1)
Pulsed(2)

SOT 23 (TO 236AB)
Adc
Symbol
Max
Unit

TA = 25C
Derate above 25C
Characteristic
PD
225
mW
1.8
mW/C
RqJA
556
C/W
TJ, Tstg
55 to +150
DEVICE MARKING
BSS123LT1 = SA

Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
100
Vdc
15
60
OFF CHARACTERISTICS
(VGS = 0, ID = 250 Adc)
Adc

(VGS = 0, VDS = 100 Vdc) TJ = 25C
TJ = 125C
IDSS
GateBody Leakage Current

(VGS = 20 Vdc, VDS = 0)
IGSS
50
nAdc

VGS(th)
0.8
2.8
Vdc

rDS(on)
5.0
6.0
gfs
80
mmhos
1.
2.
3.
4.
The Power Dissipation of the package may result in a lower continuous drain current.
Pulse Width
300 ms, Duty Cycle
2.0%.
FR 5 = 1.0
0.75 0.062 in.
Pulse Test: Pulse Width
300 ms, Duty Cycle
2.0%.
v
REV 2
416
BSS123LT1
Characteristic
Symbol
Min
Typ
Max
Unit
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
20
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Coss
9.0
pF

(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Crss
4.0
pF
td(on)
20
ns
td(off)
40
ns
VSD
1.3
TurnOn Delay Time
( CC = 30 Vdc, IC = 0.28 Adc,

(V
VGS = 10 Vdc, RGS = 50 )
TurnOff Delay Time
REVERSE DIODE
Diode Forward OnVoltage
(ID = 0.34 Adc, VGS = 0 Vdc)
2.0
1.0
VDS = 10 V
TA = 25C
1.6
VGS = 10 V
1.4
9V
1.2
1.8
8V
1.0
7V
0.8
6V
0.6
0.4
5V
0.2
4V
3V
1.0
2.0 3.0 4.0 5.0

6.0
7.0 8.0
VDS, DRAN SOURCE VOLTAGE (VOLTS)
9.0
0.8
125C
0.6
0.4
0.2
10
2.4
2.2
1.8
VGS = 10 V
ID = 200 mA
1.6
1.4
1.2
1.0
0.8
0.6
0.4
60
20
+ 20
+ 60
T, TEMPERATURE (C)
1.0
2.0 3.0 4.0

5.0
6.0
7.0 8.0
9.0
10

(NORMALIZED)
2.0
25C
55C
+ 100
+ 140

1.2
1.05
VDS = VGS
ID = 1.0 mA
1.1
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
60
20
+ 20
+ 60
T, TEMPERATURE (C)
+ 100
+ 140

Threshold Voltage
417
MOTOROLA
BSS138LT1
N-Channel Enhancement Mode

Logic Level SOT-23 MOSFET
NCHANNEL
LOGIC LEVEL
TMOS FET
TRANSISTOR
Typical applications are dcdc converters, power management in

Low Threshold Voltage (VGS(th): 0.5V...1.5V) makes it ideal for
low voltage applications
Miniature SOT23 Surface Mount Package saves board space

3 DRAIN
1
2

SOT23 (TO236A)
1
GATE
2 SOURCE

Symbol
Rating
Value
Unit
VDSS
50
Vdc
VGS
20
Vdc

ID
IDM
200
800
mA
PD
225
mW
TJ, Tstg
55 to 150
RJA
556
C/W
TL
260
DEVICE MARKING
BSS138LT1 = J1
Device
Reel Size
Tape Width
Quantity
BSS138LT1
8mm embossed tape
3000
BSS138LT3
13
8mm embossed tape
10,000
REV 1
418
BSS138LT1
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
50
Vdc
0.1
0.5
OFF CHARACTERISTICS
Adc

IDSS
GateSource Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc)
IGSS
0.1
Adc
GateSource Threshold Voltage

VGS(th)
0.5
1.5
Vdc

(VGS = 2.75 Vdc, ID < 200 mAdc, TA = 40C to +85C)
rDS(on)
5.6
10
3.5
gfs
100
mmhos
(VDS = 25 Vdc, VGS = 0, f = 1 MHz)
Ciss
40
50
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1 MHz)
Coss
12
25
(VDG = 25 Vdc, VGS = 0, f = 1 MHz)
Crss
3.5
5.0
td(on)
20
td(off)
20
Ohms
Input Capacitance
TurnOn Delay Time
TurnOff Delay Time
(VDD = 30 Vdc,
Vdc ID = 0.2
0 2 Adc,)
Adc )
ns

419
BSS138LT1
0.8
0.9
VGS = 3.5 V
TJ = 25C
VGS = 3.25 V
0.6
VGS = 3.0 V
0.5
VGS = 2.75 V
0.4
VGS = 2.5 V
0.3
0.2
150C
0.6
0.5
0.4
0.3
0.2
0.1
0
10
0.5
1.5
2.5
3.5
4.5

2.2
1.25
ID = 1.0 mA
2
VGS = 10 V
ID = 0.8 A
1.8
Vgs(th) , VARIANCE (VOLTS)

(NORMALIZED)
25C
55C
0.7
0.1
0
VDS = 10 V
0.8
0.7
1.6
VGS = 4.5 V
ID = 0.5 A
1.4
1.2
1
1.125
0.875
0.8
5
45
95
145
0.75
55
30
20
45
70
95
120
Figure 3. OnResistance Variation with

Temperature
Figure 4. Threshold Voltage Variation

with Temperature
0.6
55
145
10
VDS = 40 V
TJ = 25C
8
4
ID = 200 mA
2
0
0
500
1000
1500
2000
2500
3000
420
10
VGS = 2.5 V
9
8
150C
7
6
5
25C
4
55C
3
2
1
0.05
0.15
0.1
0.25
0.2
BSS138LT1
8
VGS = 2.75 V
7
150C
6
5
4
25C
3
2
55C
1
0
150C
5
4.5
4
3.5
3
25C
2.5
2
55C
1.5
1
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
VGS = 4.5 V
0.05
4.5
VGS = 10 V
150C
4
3.5
3
2.5
25C
2
55C
1.5
1
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
1
0.25
0.2
0.15
5.5
0.1
0.05
120
100
TJ = 150C
0.1
25C
55C
80
60
Ciss
0.01
40
Coss
20
0.001
Crss
0
0.2
0.4
0.6
0.8
1.0
1.2
10
15
20
25
421
MOTOROLA
MGSF1N02LT1

conserving traits.
NCHANNEL
ENHANCEMENTMODE
TMOS MOSFET

telephones.
3 DRAIN
1
2

SOT23 (TO236AB)
1
GATE

Life
2 SOURCE

Space

Rating
Symbol
Value
Unit
VDSS
20
Vdc
VGS
20
Vdc

ID
IDM
750
2000
mA
PD
400
mW
TJ, Tstg
55 to 150
RJA
300
C/W
TL
260
Device Marking: NZ
Device
Reel Size
Tape Width
Quantity
MGSF1N02LT1
8mm embossed tape
3000
MGSF1N02LT3
13
8mm embossed tape
10,000
REV 2
422
MGSF1N02LT1
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
20
Vdc
1.0
10
OFF CHARACTERISTICS
Adc

IDSS
IGSS
100
nAdc

VGS(th)
1.0
1.7
2.4
Vdc

(VGS = 10 Vdc, ID = 1.2 Adc)
(VGS = 4.5 Vdc, ID = 1.0 Adc)
rDS(on)
0.075
0.115
0.090
0.130
Ohms
Input Capacitance
(VDS = 5.0 Vdc)
Ciss
125
Output Capacitance
(VDS = 5.0 Vdc)
Coss
120
pF
(VDG = 5.0 Vdc)
Crss
45
td(on)
2.5
tr
1.0
td(off)
16
tf
8.0
QT
6000
pC
IS
0.6
Pulsed Current
ISM
0.75
Forward Voltage(2)
VSD
0.8
TurnOn Delay Time
Rise Time
TurnOff Delay Time
((VDD = 15 Vdc, ID = 1.0 Adc,

RL = 50 )
Fall Time
ns

Continuous Current


2.5
3
4V
VDS = 10 V
2
55C
1.5
TJ = 150C
0.5
1.5
2
2.5
3
3.25 V
3.5 V
2
VGS = 3.0 V
1.5
2.75 V
2.5 V
0.5
25C
0
2.5
2.25 V
3.5
10
423
0.2
150C
0.18
0.16
VGS = 4.5 V
0.14
25C
0.12
55C
0.1
0.08
0.06
0.04
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
MGSF1N02LT1
0.14
0.13
150C
0.12
VGS = 10 V
0.11
0.1
0.09
25C
0.08
0.07
55C
0.06
0.05
0.04
0
0.2
0.4
0.6

(NORMALIZED)
1.6
VGS = 10 V
ID = 2 A
1.4
1.3
VGS = 4.5 V
ID = 1 A
1.2
1.1
1
0.9
0.8
0.7
1.2
1.6
1.4
1.8
10
VDS = 16 V
TJ = 25C
8
4
ID = 2.0 A
2
0
0.6
55
45
95
145
2000
1000
3000
4000
5000
6000
1000
TJ = 150C
0.1
25C
55C
C, CAPACITANCE (pF)
1.5
0.8
0.01
VGS = 0 V
f = 1 MHz
TJ = 25C
Ciss
100
Coss
Crss
0.001
0
0.2
0.4
0.6
0.8
424
10
10
15
20
MOTOROLA
MGSF1N03LT1

conserving traits.
NCHANNEL
ENHANCEMENTMODE
TMOS MOSFET

telephones.
3 DRAIN
1
2

SOT23 (TO236AB)
1
GATE

Life
2 SOURCE

Space

Rating
Symbol
Value
Unit
VDSS
30
Vdc
VGS
20
Vdc

ID
IDM
750
2000
mA
PD
400
mW
TJ, Tstg
55 to 150
RJA
300
C/W
TL
260
Device Marking: N3
Reel Size
Tape Width
Quantity
MGSF1N03LT1
Device
8mm embossed tape
3000
MGSF1N03LT3
13
8mm embossed tape
10,000
REV 4
425
MGSF1N03LT1
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
30
Vdc
1.0
10
OFF CHARACTERISTICS
Adc

IDSS
IGSS
100
nAdc

VGS(th)
1.0
1.7
2.4
Vdc

(VGS = 10 Vdc, ID = 1.2 Adc)
(VGS = 4.5 Vdc, ID = 1.0 Adc)
rDS(on)
0.08
0.125
0.10
0.145
Ohms
Input Capacitance
(VDS = 5.0 Vdc)
Ciss
140
Output Capacitance
(VDS = 5.0 Vdc)
Coss
100
pF
(VDG = 5.0 Vdc)
Crss
40
td(on)
2.5
tr
1.0
td(off)
16
tf
8.0
QT
6000
pC
IS
0.6
Pulsed Current
ISM
0.75
Forward Voltage(2)
VSD
0.8
TurnOn Delay Time
Rise Time
((VDD = 15 Vdc, ID = 1.0 Adc,

RL = 50 )
TurnOff Delay Time

Fall Time
ns

Continuous Current


2.5
2.5
VGS = 3.75 V
3.5 V
VDS = 10 V
2
1.5
55C
TJ = 150C
0.5
1.5
3.25 V
1
3.0 V
0.5
2.75 V
25C
0
1.5
2
2.5
3
426
2.5 V
3.5
10
0.24
150C
0.19
VGS = 4.5 V
25C
0.14
55C
0.09
0.04
0
0.1
0.2
0.3
0.4
0.5
0.6
0.8
0.7
0.9
R DS(on) , DRAINTOSOURCE RESISTANCE (OHMS
RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS
MGSF1N03LT1
0.16
150C
0.14
VGS = 10 V
0.12
0.1
25C
0.08
55C
0.06
0.04
0
0.2
0.4

(NORMALIZED)
VGS = 10 V
ID = 2 A
1.2
VGS = 4.5 V
ID = 1 A
1
0.8
0.6
0.4
0.2
0
55
1.2
1.4
1.6
1.8
10
VDS = 24 V
TJ = 25C
8
4
ID = 2.0 A
2
0
25
50
25
75
100
125
150
2000
1000
3000
4000
5000
6000
350
VGS = 0 V
f = 1 MHz
TJ = 25C
300
TJ = 150C
0.1
25C
55C
C, CAPACITANCE (pF)
1.8
1.4
0.8
1.6
0.6
0.01
250
200
150
Ciss
100
Coss
50
0.001
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Crss
0
12
16
20
427
MOTOROLA
MGSF1P02ELT1

conserving traits.
PCHANNEL
ENHANCEMENTMODE
TMOS MOSFET

telephones.
Life
3 DRAIN
1
2

SOT23 (TO236AB)
1
GATE
2 SOURCE

Symbol
Value
Unit
VDSS
20
Vdc
VGS
8.0
Vdc

ID
IDM
750
2000
mA
Rating
PD
400
mW
TJ, Tstg
55 to 150
RJA
300
C/W
TL
260
Device Marking: PC
Device
Reel Size
Tape Width
Quantity
MGSF1P02ELT1
8mm embossed tape
3000
MGSF1P02ELT3
13
8mm embossed tape
10,000
428
MGSF1P02ELT1
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
20
Vdc
1.0
10
OFF CHARACTERISTICS
Adc

IDSS
GateBody Leakage Current (VGS = 8.0 Vdc, VDS = 0 Vdc)
IGSS
100
nAdc

VGS(th)
0.7
0.85
1.2
Vdc

(VGS = 4.5 Vdc, ID = 0.75 Adc)
(VGS = 2.5 Vdc, ID = 0.5 Adc)
rDS(on)
0.20
0.32
0.26
0.50
Ohms
Input Capacitance
(VDS = 5.0 Vdc)
Ciss
130
Output Capacitance
(VDS = 5.0 Vdc)
Coss
120
pF
(VDG = 5.0 Vdc)
Crss
60
td(on)
2.5
tr
1.0
td(off)
16
tf
8.0
QT
6000
pC
IS
0.6
Pulsed Current
ISM
0.75
Forward Voltage(2)
VSD
1.5
TurnOn Delay Time
Rise Time
TurnOff Delay Time
((VDD = 15 Vdc, ID = 1.0 Adc,

RL = 50 )
Fall Time
ns

Continuous Current

429
MOTOROLA
MGSF1P02LT1

conserving traits.
PCHANNEL
ENHANCEMENTMODE
TMOS MOSFET

telephones.
Life
3 DRAIN
1
2

SOT23 (TO236AB)
1
GATE
2 SOURCE

Rating
Symbol
Value
Unit
VDSS
20
Vdc
VGS
20
Vdc

ID
IDM
750
2000
mA
PD
400
mW
TJ, Tstg
55 to 150
RJA
300
C/W
TL
260
Device Marking: PC
Device
Reel Size
Tape Width
Quantity
MGSF1P02LT1
8mm embossed tape
3000
MGSF1P02LT3
13
8mm embossed tape
10,000
REV 2
430
MGSF1P02LT1
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
20
Vdc
1.0
10
OFF CHARACTERISTICS
Adc

IDSS
IGSS
100
nAdc

VGS(th)
1.0
1.7
2.4
Vdc

(VGS = 10 Vdc, ID = 1.5 Adc)
(VGS = 4.5 Vdc, ID = 0.75 Adc)
rDS(on)
0.235
0.375
0.350
0.500
Ohms
Input Capacitance
(VDS = 5.0 Vdc)
Ciss
130
Output Capacitance
(VDS = 5.0 Vdc)
Coss
120
pF
(VDG = 5.0 Vdc)
Crss
60
td(on)
2.5
tr
1.0
td(off)
16
tf
8.0
QT
6000
pC
IS
0.6
Pulsed Current
ISM
0.75
Forward Voltage(2)
VSD
1.5
TurnOn Delay Time
Rise Time
((VDD = 15 Vdc, ID = 1.0 Adc,

RL = 50 )
TurnOff Delay Time

Fall Time
ns

Continuous Current


1.5
1.5
VGS = 3.5 V
1.25
3.25 V
1.25
VDS = 10 V
1
3.0 V
0.75
0.75
55C
0.5
TJ = 150C
25C
0.25
2.75 V
0.5
2.5 V
0.25
2.25 V
0
1.5
2
2.5
3
3.5
10
431
0.55
150C
0.5
VGS = 4.5 V
0.45
25C
0.4
55C
0.35
0
0.1
0.3
0.2
0.5
0.4
0.6
0.7
0.8
MGSF1P02LT1
0.4
0.38
0.36
VGS = 10 V
0.34
150C
0.32
0.3
0.28
25C
0.26
0.24
55C
0.22
0.2
0
0.4
0.2

(NORMALIZED)
1.25
VGS = 10 V
ID = 1.5 A
1.15
1.1
VGS = 4.5 V
ID = .75 A
1.05
1
0.95
0.9
0.85
VDS = 16 V
TJ = 25C
8
4
ID = 1.5 A
2
45
95
145
2000
1000
4000
3000
5000
6000
1000
TJ = 150C
0.1
25C
55C
C, CAPACITANCE (pF)
1.6
1.4
10
0.01
0.2
0.4
0.6
0.8
1.2
1.4
1.6
432
1.2
0.8
55
0.001
1.2
0.8
0.6
1.8
VGS = 0 V
f = 1 MHz
TJ = 25C
Ciss
100
Coss
Crss
10
10
MOTOROLA
MGSF3441VT1

conserving traits.
PCHANNEL
ENHANCEMENTMODE
TMOS MOSFET

1 2 5 6
DRAIN

TSOP 6 PLASTIC
3
GATE

SOURCE
4

Rating
Symbol
Value
Unit
VDSS
20
Vdc
VGS
8.0
Vdc

ID
IDM
3.3
20
PD
2.0
TJ, Tstg
55 to 150
RJA
128
C/W
TL
260
5 sec
Device
Reel Size
Tape Width
Quantity
MGSF3441VT1
8 mm embossed tape
3000
MGSF3441VT3
13
8 mm embossed tape
10,000
433
MGSF3441VT1
Characteristic
Symbol
Min
Typ
Max
20
1.0
4.0
100
0.45
0.078
0.110
0.090
0.135
Unit
OFF CHARACTERISTICS
(VGS = 0 Vdc, ID = 10 A)
V(BR)DSS

IDSS
IGSS
Vdc
Adc
nAdc
VGS(th)

(VGS = 4.5 Vdc, ID = 3.3 A)
(VGS = 2.5 Vdc, ID = 2.9 A)
rDS(on)
Vdc
Ohms
Input Capacitance
(VDS = 5.0 V)
Ciss
90
Output Capacitance
(VDS = 5.0 V)
Coss
50
pF
(VDG = 5.0 V)
Crss
10
td(on)
27
50
tr
17
30
td(off)
52
80
tf
45
70
QT
3000
pC
IS
1.0
Pulsed Current
ISM
20
Forward Voltage(2)
VSD
0.80
1.2
TurnOn Delay Time
Rise Time
TurnOff Delay Time
( DD = 15 Vdc, ID = 1.0 A,
(V
VGEN = 10 V, RL = 10 )
Fall Time
Gate Charge
ns

Continuous Current

434
MGSF3441VT1
20
VGS = 4.5 V
20
4.0 V
TC = 55C
3.5 V
125C
16
3.0 V
16
12
2.5 V
8.0
2.0 V
4.0
25C
12
8.0
4.0
1.5 V
0
0
0
1.0
2.0
3.0
4.0
5.0
3.0
4.0
1400
1200
0.24
VGS = 2.5 V
C, CAPACITANCE (pF)
2.0
0.30
0.18
0.12
VGS = 4.5 V
1000
800
600
Ciss
400
Coss
0.06
200
Crss
0
0
4.0
8.0
12
16
12
8.0
16
3.0
2.0
1.0
0
0
4.0
VDS = 10 V
ID = 3.3 A
4.0
20
5.0
1.0
2.0
4.0
6.0
8.0
10
20
1.8
1.6
VGS = 4.5 V
ID = 3.3 A
1.4
1.2
1.0
0.8
0.6
50
25
25
50
75
100
125

Temperature
150
435
MGSF3441VT1
20
0.30
ID = 3.3 A
TJ = 150C
10
TJ = 25C
0.18
0.12
0.06
0
1.0
0.25
0.50
0.75
1.00
1.25
1.50
2.0
4.0
6.0
8.0

0.4
20
0.3
0.24
16
0.1
POWER (W)
0.2
ID = 250 A
12
8.0
0
4.0
0.1
0.2
50
0
25
25
50
75
100
125
150
0.01
0.1
1.0
10
TJ, TEMPERATURE (C)
TIME (sec)

THERMAL IMPEDANCE
2.0
1.0
DUTY CYCLE = 0.5
0.2
0.1
NOTES:
PDM
0.1

2. PER UNIT BASE =
2. RthJA = 62.5C/W
4. SURFACE MOUNTED
0.05
0.02
t1
SINGLE PULSE
t2
0.01
0.0001
0.001
0.01
0.1
1.0
10
30
436
MOTOROLA
MGSF3441XT1

PCHANNEL
ENHANCEMENTMODE
TMOS MOSFET

conserving traits.

1 2 5 6
DRAIN

TSOP 6 PLASTIC
3
GATE

SOURCE
4

Rating
Symbol
Value
Unit
VDSS
20
Vdc
VGS
8.0
Vdc

ID
IDM
1.5
20
PD
950
mW
TJ, Tstg
55 to 150
RJA
132
C/W
TL
260
Device
Reel Size
Tape Width
Quantity
MGSF3441XT1
8 mm embossed tape
3000
MGSF3441XT3
13
8 mm embossed tape
10,000
REV 2
437
MGSF3441XT1
Characteristic
Symbol
Min
Typ
Max
20
1.0
4.0
100
0.45
0.078
0.110
0.100
0.135
Unit
OFF CHARACTERISTICS
(VGS = 0 Vdc, ID = 10 A)
V(BR)DSS

IDSS
IGSS
Vdc
Adc
nAdc
VGS(th)

(VGS = 4.5 Vdc, ID = 1.5 A)
(VGS = 2.5 Vdc, ID = 1.2 A)
rDS(on)
Vdc
Ohms
Input Capacitance
(VDS = 5.0 V)
Ciss
90
Output Capacitance
(VDS = 5.0 V)
Coss
50
pF
(VDG = 5.0 V)
Crss
10
td(on)
27
50
tr
17
30
td(off)
52
80
tf
45
70
QT
3000
pC
IS
1.0
Pulsed Current
ISM
20
Forward Voltage(2)
VSD
0.80
1.2
TurnOn Delay Time
Rise Time
TurnOff Delay Time
( DD = 15 Vdc, ID = 1.0 A,
(V
VGEN = 10 V, RL = 10 )
Fall Time
Gate Charge
ns

Continuous Current

438
MOTOROLA
MGSF3442VT1

NCHANNEL
ENHANCEMENTMODE
TMOS MOSFET

conserving traits.

1 2 5 6
DRAIN

TSOP 6 PLASTIC
3
GATE

SOURCE
4

Rating
Symbol
Value
Unit
VDSS
20
Vdc
VGS
8.0
Vdc

ID
IDM
4.0
20
PD
2.0
TJ, Tstg
55 to 150
RJA
62.5
C/W
TL
260
5 sec
Device
Reel Size
Tape Width
Quantity
MGSF3442VT1
8 mm embossed tape
3000
MGSF3442VT3
13
8 mm embossed tape
10,000
439
MGSF3442VT1
Characteristic
Symbol
Min
Typ
Max
20
1.0
5.0
100
0.6
0.058
0.072
0.070
0.095
Unit
OFF CHARACTERISTICS
(VGS = 0 Vdc, ID = 10 A)
V(BR)DSS

IDSS
IGSS
Vdc
Adc
nAdc
VGS(th)

(VGS = 4.5 Vdc, ID = 4.0 A)
(VGS = 2.5 Vdc, ID = 3.4 A)
rDS(on)
Vdc
Ohms
Input Capacitance
(VDS = 5.0 V)
Ciss
90
Output Capacitance
(VDS = 5.0 V)
Coss
50
pF
(VDG = 5.0 V)
Crss
10
td(on)
8.0
20
tr
24
40
td(off)
36
60
tf
10
20
QT
nC
IS
1.0
Pulsed Current
ISM
5.0
Forward Voltage(2)
VSD
1.2
TurnOn Delay Time
Rise Time
TurnOff Delay Time
( DD = 10 Vdc, ID = 1.0 A,
(V
VGEN = 10 V, RL = 10 )
Fall Time
Gate Charge
ns

Continuous Current

440
MGSF3442VT1
20
TC = 55C
2.5 V
16
16
20
3.0 V
VGS = 4.5 V
4.0 V
3.5 V
12
2.0 V
8.0
4.0
125C
12
25C
8.0
4.0
1.5 V
0
0
0
1.0
3.0
2.0
4.0
5.0
2.0
2.5
3.0
1200
0.12
1000
VGS = 2.5 V
0.10
0.08
C, CAPACITANCE (pF)
1.5
1.0
0.14
VGS = 4.5 V
0.06
0.04
800
600
Ciss
400
Coss
200
0.02
Crss
0
0
4.0
8.0
12
16
20
16
3.0
2.0
1.0
0
0
12
8.0
4.0
VDS = 10 V
ID = 4.0 A
4.0
5.0
0.5
2.0
4.0
6.0
8.0
20
1.8
1.6
VGS = 4.5 V
ID = 4.0 A
1.4
1.2
1.0
0.8
0.6
50
25
25
50
75
100
125

Temperature
150
441
MGSF3442VT1
20
0.20
TJ = 150C
ID = 4.0 A
TJ = 25C
10
0.12
0.08
0.04
0
1.0
0.25
0.50
0.75
1.00
1.25
1.50
2.0
4.0
6.0
8.0

0.2
20
0.1
16
POWER (W)
0.16
ID = 250 A
0.1
12
8.0
0.2
4.0
0.3
0.4
50
0
25
25
50
75
100
125
150
0.01
0.1
1.0
10
TJ, TEMPERATURE (C)
TIME (sec)

THERMAL IMPEDANCE
2.0
1.0
DUTY CYCLE = 0.5
0.2
0.1
NOTES:
PDM
0.1

2. PER UNIT BASE =
2. RthJA = 62.5C/W
4. SURFACE MOUNTED
0.05
0.02
t1
SINGLE PULSE
t2
0.01
0.0001
0.001
0.01
0.1
1.0
10
30
442
MOTOROLA
MGSF3442XT1

NCHANNEL
ENHANCEMENTMODE
TMOS MOSFET

conserving traits.

1 2 5 6
DRAIN

TSOP 6 PLASTIC
3
GATE

SOURCE
4

Rating
Symbol
Value
Unit
VDSS
20
Vdc
VGS
8.0
Vdc

ID
IDM
1.7
20
PD
400
mW
TJ, Tstg
55 to 150
RJA
300
C/W
TL
260
Device
Reel Size
Tape Width
Quantity
MGSF3442XT1
8 mm embossed tape
3000
MGSF3442XT3
13
8 mm embossed tape
10,000
443
MGSF3442XT1
Characteristic
Symbol
Min
Typ
Max
20
1.0
5.0
100
0.6
0.058
0.072
0.070
0.095
Unit
OFF CHARACTERISTICS
(VGS = 0 Vdc, ID = 10 A)
V(BR)DSS

IDSS
IGSS
Vdc
Adc
nAdc
VGS(th)

(VGS = 4.5 Vdc, ID = 1.7 A)
(VGS = 2.5 Vdc, ID = 1.3 A)
rDS(on)
Vdc
Ohms
Input Capacitance
(VDS = 5.0 V)
Ciss
90
Output Capacitance
(VDS = 5.0 V)
Coss
50
pF
(VDG = 5.0 V)
Crss
10
td(on)
8.0
20
tr
24
40
td(off)
36
60
tf
10
20
QT
nC
IS
1.0
Pulsed Current
ISM
5.0
Forward Voltage(2)
VSD
1.2
TurnOn Delay Time
Rise Time
TurnOff Delay Time
( DD = 10 Vdc, ID = 1.0 A,
(V
VGEN = 10 V, RL = 10 )
Fall Time
Gate Charge
ns

Continuous Current

444
MOTOROLA
MGSF3454VT1

NCHANNEL
ENHANCEMENTMODE
TMOS MOSFET

conserving traits.

1 2 5 6
DRAIN

TSOP 6 PLASTIC
3
GATE

SOURCE
4

Rating
Symbol
Value
Unit
VDSS
30
Vdc
VGS
20
Vdc

ID
IDM
4.2
20
PD
2.0
TJ, Tstg
55 to 150
RJA
62.5
C/W
TL
260
5 sec
Device
Reel Size
Tape Width
Quantity
MGSF3454VT1
8 mm embossed tape
3000
MGSF3454VT3
13
8 mm embossed tape
10,000
445
MGSF3454VT1
Characteristic
Symbol
Min
Typ
Max
30
1.0
25
100
1.0
0.05
0.07
0.065
0.095
Unit
OFF CHARACTERISTICS
(VGS = 0 Vdc, ID = 10 A)
V(BR)DSS

IDSS
IGSS
Vdc
Adc
nAdc
VGS(th)

(VGS = 10 Vdc, ID = 4.2 A)
(VGS = 4.5 Vdc, ID = 3.4 A)
rDS(on)
Vdc
Ohms
Input Capacitance
(VDS = 5.0 V)
Ciss
90
Output Capacitance
(VDS = 5.0 V)
Coss
50
pF
(VDG = 5.0 V)
Crss
10
td(on)
10
20
tr
15
30
td(off)
20
35
tf
10
20
QT
15
nC
IS
1.0
Pulsed Current
ISM
5.0
Forward Voltage(2)
VSD
1.2
TurnOn Delay Time
Rise Time
TurnOff Delay Time
( DD = 10 Vdc, ID = 1.0 A,
(V
VGEN = 10 V, RL = 10 )
Fall Time
Gate Charge
ns

Continuous Current

446
MGSF3454VT1
20
20
VGS = 10, 9, 8, 7, 6V
16
TJ = 55C
5V
12
4V
25C
16
125C
12
4
3V
0
560
480
Ciss
C, CAPACITANCE (pF)
0.16
0.12
VGS = 4.5 V
0.08
VGS = 10 V
400
320
Coss
240
160
0.04
Crss
80
0
0
0
8
12
16
20
12
18
24
30
1.75
10
VDS = 15 V
ID = 4.2 A

(NORMALIZED)
0.20
2
0
0
1.5
3.0
4.5
6.0
7.5
9.0
VGS = 10 V
ID = 4.2 A
1.50
1.25
1.00
0.75
50
25
0
25
50
75
100
125
150
447
MGSF3454VT1
0.20
10
40
TJ = 150C
TJ = 25C
1
0
0.25
0.50
0.75
1.00
1.25
1.5
0.16
0.12
0.08
0.04
1.75
ID = 4.2 A
2
4
6
8
0.4
30
0.2
24
0.0
ID = 250 A
POWER (W)
10
0.2
18
12
0.4
6
0.6
0.8
50
25
25
50
75
100
125
150
0
0.01
0.10
TJ, TEMPERATURE (C)
1.00
TIME (sec)
10.00
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
P(pk)
0.05
t1
0.02
0.01
1.0E04
t2
SINGLE PULSE
1.0E03
1.0E02
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
448
MOTOROLA
MGSF3454XT1

NCHANNEL
ENHANCEMENTMODE
TMOS MOSFET

conserving traits.

1 2 5 6
DRAIN

TSOP 6 PLASTIC
3
GATE

SOURCE
4

Rating
Symbol
Value
Unit
VDSS
30
Vdc
VGS
20
Vdc

ID
IDM
1.75
20
PD
950
mW
TJ, Tstg
55 to 150
RJA
250
C/W
TL
260

Device Marking = 3G
Device
Reel Size
Tape Width
Quantity
MGSF3454XT1
8 mm embossed tape
3000
MGSF3454XT3
13
8 mm embossed tape
10,000
449
MGSF3454XT1
Characteristic
Symbol
Min
Typ
Max
30
1.0
25
100
1.0
0.05
0.07
0.065
0.095
Unit
OFF CHARACTERISTICS
(VGS = 0 Vdc, ID = 10 A)
V(BR)DSS

IDSS
IGSS
Vdc
Adc
nAdc
VGS(th)

(VGS = 10 Vdc, ID = 1.75 A)
(VGS = 4.5 Vdc, ID = 1.5 A)
rDS(on)
Vdc
Ohms
Input Capacitance
(VDS = 5.0 V)
Ciss
345
Output Capacitance
(VDS = 5.0 V)
Coss
215
pF
(VDG = 5.0 V)
Crss
140
td(on)
10
tr
15
td(off)
20
tf
10
QT
15
nC
IS
1.0
Pulsed Current
ISM
5.0
Forward Voltage(2)
VSD
1.2
TurnOn Delay Time
Rise Time
( DD = 10 Vdc, ID = 1.0 A,
(V
VGEN = 10 V, RL = 10 )
TurnOff Delay Time

Fall Time
Gate Charge
ns

Continuous Current


7.0
0.12
VGS = 4.5 V
6.0
4.0 V
5.0
4.0
3.5 V
3.0
2.0
3.0 V
1.0
2.5 V
2.25 V
VGS = 10 V
0.08
25C
0.06
55C
0.04
0
0
450
TJ = 150C
0.10
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0.02
9.0
10
1.0
2.0
3.0
4.0
5.0
6.0
7.0
MGSF3454XT1
1000
0.14
TJ = 150C
C, CAPACITANCE (pF)
0.16
0.12
VGS = 4.5 V
0.10
25C
0.08
55C
Ciss
Coss
Crss
100
VGS = 0 V
f = 1.0 MHz
TJ = 25C
0.06
0.04
10
0.5
1.0
1.5
2.5
2.0
3.0
8.0
12
16
20
10
24
1.4
VDS = 24 V
TJ = 25C
ID = 10 A
8.0
6.0
4.0
2.0
0
0
2.0
4.0
6.0
8.0
1.3
ID = 1.5 A
VGS = 4.5 V
1.2
1.1
1.0
0.9
0.8
0.7
0.6
10
5.0
55
45
95
145
QG, TOTAL GATE CHARGE (nC)

Temperature
1.6
10
ID = 6.4 A
VGS = 10 V
1.5
1.4
IS, SOURCE CURRENT (AMPS)
4.0
VGS , GATETOSOURCE VOLTAGE (VOLTS)
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
1.0
TJ = 150C
25C 55C
0.1
0.01
0.001
55
5.0
45
95
145
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VSD, SOURCETODRAIN VOLTAGE (VOLTS)

Temperature
451
MGSF3454XT1
2.0
0.5
1.8
0.4
V GS(th) (VOLTS)
1.6
0.3
0.2
ID = 1.75 A
ID = 250 mA
1.4
1.2
1.0
0.1
0.8
0
0.6
0
1.0
2.0
3.0
4.0
6.0
5.0
7.0
8.0
9.0
10
25
50
25
50
75
100

125
150
20
POWER (WATTS)
16
12
8.0
4.0
0
0.1
0.01
1.0
10
100
TIME (sec)
1.0
DUTY CYCLE = 0.5

0.2
0.1
0.1
P(pk)
0.05
0.02
t1
t2
0.01
SINGLE PULSE
RJA(t) = r(t) RJA

PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TA = P(pk) RJA(t)
0.01
0.0001
0.001
0.01
0.1
1.0
10
100
1.0 k
452
MOTOROLA
MGSF3455VT1

PCHANNEL
ENHANCEMENTMODE
TMOS MOSFET

conserving traits.

1 2 5 6
DRAIN

TSOP 6 PLASTIC
3
GATE

SOURCE
4

Rating
Symbol
Value
Unit
VDSS
30
Vdc
VGS
20
Vdc

ID
IDM
3.5
20
PD
2.0
TJ, Tstg
55 to 150
RJA
62.5
C/W
TL
260
5 sec
Device
Reel Size
Tape Width
Quantity
MGSF3455VT1
8 mm embossed tape
3000
MGSF3455VT3
13
8 mm embossed tape
10,000
453
MGSF3455VT1
Characteristic
Symbol
Min
Typ
Max
30
1.0
5.0
100
1.0
0.080
0.134
0.100
0.190
Unit
OFF CHARACTERISTICS
(VGS = 0 Vdc, ID = 10 A)
V(BR)DSS

IDSS
IGSS
Vdc
Adc
nAdc
VGS(th)

(VGS = 10 Vdc, ID = 3.5 A)
(VGS = 4.5 Vdc, ID = 2.5 A)
rDS(on)
Vdc
Ohms
Input Capacitance
(VDS = 5.0 V)
Ciss
90
Output Capacitance
(VDS = 5.0 V)
Coss
50
pF
(VDG = 5.0 V)
Crss
10
td(on)
10
20
tr
15
30
td(off)
20
35
tf
10
20
QT
3000
pC
IS
1.0
Pulsed Current
ISM
5.0
Forward Voltage(2)
VSD
1.2
TurnOn Delay Time
Rise Time
TurnOff Delay Time
( DD = 15 Vdc, ID = 1.0 A,
(V
VGEN = 10 V, RL = 10 )
Fall Time
Gate Charge
ns

Continuous Current

454
MGSF3455VT1
20
20
TJ = 55C
6V
16
VGS = 10, 9, 8, 7 V
5V
12
4V
25C
16
125C
12
4
3V
0
580
Ciss
500
C, CAPACITANCE (pF)
0.18
VGS = 4.5 V
0.12
VGS = 10 V
420
340
260
Coss
180
0.06
Crss
100
20
0
8
12
16
20
12
18
24
30
1.60
10
VDS = 15 V
ID = 3.5 A

(NORMALIZED)
0.24
0.30
2
0
0
1.5
3.0
4.5
6.0
1.45
VGS = 10 V
ID = 3.5 A
1.30
1.15
1.00
0.85
0.7
50
25
0
25
50
75
100
125
150
455
MGSF3455VT1
0.40
20
10
TJ = 150C
TJ = 25C
0.32
0.24
0.16
0.08
0
1
0
0.25
0.50
0.75
1.00
1.25
1.5
ID = 3.5 A
1.75
10
0.60
30
0.45
24
ID = 250 A
0.30
POWER (W)
0.15
18
12
0.0
6
0.15
0.3
50
25
25
50
75
100
TJ, TEMPERATURE (C)
125
150
0
0.01
0.10
1.00
10.00
TIME (sec)
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
P(pk)
0.05
t1
0.02
0.01
1.0E04
t2
SINGLE PULSE
1.0E03
1.0E02
1.0E01
RJC(t) = r(t) RJC

PULSE TRAIN SHOWN
READ TIME AT t1
1.0E+00
1.0E+01
456
MOTOROLA
MGSF3455XT1

PCHANNEL
ENHANCEMENTMODE
TMOS MOSFET

conserving traits.

1 2 5 6
DRAIN

TSOP 6 PLASTIC
3
GATE

SOURCE
4

Rating
Symbol
Value
Unit
VDSS
30
Vdc
VGS
20
Vdc

ID
IDM
1.45
10
PD
400
mW
TJ, Tstg
55 to 150
RJA
300
C/W
TL
260
Device
Reel Size
Tape Width
Quantity
MGSF3455XT1
8 mm embossed tape
3000
MGSF3455XT3
13
8 mm embossed tape
10,000
457
MGSF3455XT1
Characteristic
Symbol
Min
Typ
Max
30
1.0
5.0
100
1.0
0.080
0.134
0.100
0.190
Unit
OFF CHARACTERISTICS
(VGS = 0 Vdc, ID = 10 A)
V(BR)DSS

IDSS
IGSS
Vdc
Adc
nAdc
VGS(th)

(VGS = 10 Vdc, ID = 1.45 A)
(VGS = 4.5 Vdc, ID = 1.2 A)
rDS(on)
Vdc
Ohms
Input Capacitance
(VDS = 5.0 V)
Ciss
90
Output Capacitance
(VDS = 5.0 V)
Coss
50
pF
(VDG = 5.0 V)
Crss
10
td(on)
10
20
tr
15
30
td(off)
20
35
tf
10
20
QT
3000
pC
IS
1.0
Pulsed Current
ISM
5.0
Forward Voltage(2)
VSD
0.85
TurnOn Delay Time
Rise Time
TurnOff Delay Time
( DD = 15 Vdc, ID = 1.0 A,
(V
VGEN = 10 V, RL = 10 )
Fall Time
Gate Charge
ns

Continuous Current

458
MOTOROLA
TMOS FET Transistor
MMBF170LT1
DRAIN
3
NChannel
1
GATE
3
2
SOURCE
1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
60
Vdc
DrainGate Voltage
VDGS
60
Vdc
GateSource Voltage
Continuous
Nonrepetitive (tp 50 ms)
VGS
VGSM
20
40
Vdc
Vpk
ID
IDM
0.5
0.8
Adc
Symbol
Max
Unit
PD
225
mW
1.8
mW/C
R JA
556
C/W
TJ, Tstg
55 to +150
Drain Current Continuous

Pulsed

SOT 23 (TO 236AB)
Characteristic
TA = 25C
Derate above 25C
DEVICE MARKING
MMBF170LT1 = 6Z

Characteristic
Symbol
Min
Max
Unit
V(BR)DSS
60
Vdc
IGSS
10
nAdc
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA)
VGS(th)
0.8
3.0
Vdc
Static DrainSource OnResistance (VGS = 10 Vdc, ID = 200 mA)
rDS(on)
5.0
ID(off)
0.5
W
mA
Ciss
60
pF
td(on)
10
ns
td(off)
10
OFF CHARACTERISTICS
DrainSource Breakdown Voltage (VGS = 0, ID = 100 A)

GateBody Leakage Current, Forward (VGSF = 15 Vdc, VDS = 0)
OnState Drain Current (VDS = 25 Vdc, VGS = 0)
Input Capacitance
(VDS = 10 Vdc, VGS = 0 V, f = 1.0 MHz)
SWITCHING CHARACTERISTICS (2)

TurnOn Delay Time
TurnOff Delay Time
((VDD = 25 Vdc, ID = 500 mA, Rgen = 50

Figure 1
1. FR 5 = 1.0
0.75 0.062 in.
300 s, Duty Cycle
W)
v 2.0%.
REV 2
459
MMBF170LT1
+25 V
125
PULSE
GENERATOR
50
Vin
ton
td(on)
W
W
20 dB 50
ATTENUATOR
40 pF
TO SAMPLING
SCOPE
50 INPUT
Vout
OUTPUT
INVERTED
Vout
tr
90%
td(off)
90%
10%
INPUT
90%
50%
50%
50
Vin
1M
toff
tf
10%
PULSE WIDTH
(Vin AMPLITUDE 10 VOLTS)
Figure 2. Switching Waveform
2.0
1.0
VDS = 10 V
TA = 25C
1.6
VGS = 10 V
1.4
9V
1.2
1.8
8V
1.0
7V
0.8
6V
0.6
0.4
5V
0.2
4V
3V
1.0
2.0 3.0 4.0 5.0

6.0
7.0 8.0
9.0
0.8
125C
0.6
0.4
0.2
10
2.4
2.2
1.8
VGS = 10 V
ID = 200 mA
1.6
1.4
1.2
1.0
0.8
0.6
0.4
60
20
+ 20
+ 60
T, TEMPERATURE (C)
+ 100

460
1.0
2.0 3.0 4.0

5.0
6.0
7.0 8.0
9.0
10

(NORMALIZED)
2.0
25C
55C
+ 140
1.2
1.05
VDS = VGS
ID = 1.0 mA
1.1
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
60
20
+ 20
+ 60
T, TEMPERATURE (C)
+ 100
+ 140

Threshold Voltage
MOTOROLA


MMBF0201NLT1
NCHANNEL
ENHANCEMENTMODE
TMOS MOSFET
rDS(on) = 1.0 OHM
3 DRAIN
3
1
2
1
GATE

Life

SOT23 (TO236AB)
2 SOURCE

Rating
Symbol
Value
Unit
VDSS
20
Vdc
VGS
20
Vdc

ID
ID
IDM
300
240
750
mAdc
PD
225
mW
TJ, Tstg
55 to 150
RJA
556
C/W
TL
260
DEVICE MARKING
N1
Reel Size
Tape Width
Quantity
MMBF0201NLT1
Device
12 mm embossed tape
3000
MMBF0201NLT3
13
12 mm embossed tape
10,000
REV 1
461
MMBF0201NLT1
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
20
Vdc
1.0
10
OFF CHARACTERISTICS
(VGS = 0 Vdc, ID = 10 A)
Adc

IDSS
IGSS
100
nAdc

VGS(th)
1.0
1.7
2.4
Vdc

rDS(on)
0.75
1.0
1.0
1.4
gFS
450
mMhos
pF
Ohms
Input Capacitance
(VDS = 5.0 V)
Ciss
45
Output Capacitance
(VDS = 5.0 V)
Coss
25
(VDG = 5.0 V)
Crss
5.0
td(on)
2.5
tr
2.5
td(off)
15
tf
0.8
QT
1400
pC
IS
0.3
Pulsed Current
ISM
0.75
Forward Voltage(2)
VSD
0.85
TurnOn Delay Time
Rise Time
TurnOff Delay Time

RL = 50 )
Fall Time
ns

Continuous Current

462
MMBF0201NLT1
1.0
1.0
0.8
0.6
0.4
125C
0.2
55C
25C
ONRESISTANCE (OHMS)
VGS = 4 V
0.6
VGS = 10, 9, 8, 7, 6 V
0.4
0.2
VGS = 3 V
0.3
0.9
1.2
0.9
VGS = 4.5 V
0.6
VGS = 10 V
0
0.2
0.4
0.6
0.8
2.0
1.5
1.0
0.5
5
10
15
1.10
14
1.05
ID = 250 A
1.00
VDS = 16 V
ID = 300 mA
10
8
6
4
20

16
12
1.4
2.4
0.95
0.90
0.85
0.80
0.75
0.70
2
0
0
1.2
0.3
0.6
1.5
0.8
VGS = 5 V
0.65
160
450
2000
3400
0.60
25
25
50
75
100
125
TEMPERATURE (C)

Over Temperature
150
463
MMBF0201NLT1
100
1.6
VGS = 10 V @ 300 mA
80
C, CAPACITANCE (pF)
1.8
1.4
1.2
VGS = 4.5 V @ 100 mA
1.0
60
Ciss
40
Coss
20
0.8
Crss
0.6
50
25
25
50
75
100
125
150
10
15

20
10
1.0
0.1
125C
25C
55C
0.01
0.001
0.3
0.6
0.9
1.2
1.4

464
MOTOROLA

MMBF0202PLT1
PCHANNEL
ENHANCEMENTMODE
TMOS MOSFET
rDS(on) = 1.4 OHM
3 DRAIN
3
1
2
1
GATE

Life

SOT23 (TO236AB)
2 SOURCE

Symbol
Value
Unit
VDSS
20
Vdc
VGS
20
Vdc

ID
ID
IDM
300
240
750
mAdc
PD
225
mW
TJ, Tstg
55 to 150
RJA
625
C/W
TL
260
Rating
DEVICE MARKING
P3
Reel Size
Tape Width
Quantity
MMBF0202PLT1
Device
12 mm embossed tape
3000
MMBF0202PLT3
13
12 mm embossed tape
10,000
(Replaces MMBF0202P/D)
465
MMBF0202PLT1
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
20
Vdc
1.0
10
OFF CHARACTERISTICS
(VGS = 0 Vdc, ID = 10 A)
Adc

IDSS
IGSS
100
nAdc

VGS(th)
1.0
1.7
2.4
Vdc

rDS(on)
0.9
2.0
1.4
3.5
gFS
600
mMhos
pF
Ohms
Input Capacitance
(VDS = 5.0 V)
Ciss
50
Output Capacitance
(VDS = 5.0 V)
Coss
45
(VDG = 5.0 V)
Crss
20
td(on)
2.5
tr
1.0
td(off)
16
tf
8.0
QT
2700
pC
IS
0.3
Pulsed Current
ISM
0.75
Forward Voltage(2)
VSD
1.5
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 15 Vdc,
RL = 75 ,
ID = 200 mAdc,
mAdc
VGEN = 10 V, RG = 6.0 )
Fall Time
(VDS = 16 V, VGS = 10 V,
ID = 200 mA)
ns

Continuous Current

466
MMBF0202PLT1
1.0
1.0
5V
0.8
25C
125C
0.6
0.4
0.2
ONRESISTANCE (OHMS)
0.6
0.4
3V
0.2
2
VGS = 4.5 V
1
VGS = 10 V
0
100
200
300
500
400
4
200 mA
3
2
50 mA
1
0
0
5
10
15
20

16
1.20
1.15
14
ID = 200 mA
2160
10
8
VDS = 10 V
VDS = 16 V
6
590
4
ID = 250 A
1.10
1.05
1.00
0.95
0.90
0.85
2
0
0
12
4V
VGS = 10, 9, 8, 7, 6 V
0.8
TC = 55C
230
690
2270
3500
0.80
50
25
50
75
25
TEMPERATURE (C)
100
125
150

Over Temperature
467
MMBF0202PLT1
1.30
140
120
VGS = 4.5 V @ 50 mA
C, CAPACITANCE (pF)
1.25
1.20
1.15
1.10
1.05
VGS = 10 V @ 200 mA
1.00
0.95
100
80
60
Ciss
40
Coss
0.90
20
0.85
0.80
50
Crss
0
25
25
50
75
100
125
150
10
15

20
10
1.0
TJ = 150C
55C
0.1
25C
0.01
0.001
0
3
4
1
2
4.5

468
MOTOROLA
MMBF2201NT1


N CHANNEL
ENHANCEMENT MODE
TMOS MOSFET
rDS(on) = 1.0 OHM
3 DRAIN
CASE 41902, Style 7

SC70/SOT323
1
GATE

Life
2 SOURCE
Miniature SC70 / SOT 323 Surface Mount Package Saves

Board Space

Rating
Symbol
Value
Unit
VDSS
20
Vdc
VGS
20
Vdc

ID
ID
IDM
300
240
750
mAdc

Derate above 25C
PD
150
1.2
mW
mW/C
TJ, Tstg
55 to 150
RJA
833
C/W
TL
260
DEVICE MARKING
N1
Device
Reel Size
Tape Width
Quantity
MMBF2201NT1
8 mm embossed tape
3000
MMBF2201NT3
13
8 mm embossed tape
10,000
REV 1
469
MMBF2201NT1
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
20
Vdc
1.0
10
OFF CHARACTERISTICS
(VGS = 0 Vdc, ID = 10 A)
Adc

IDSS
IGSS
100
nAdc

VGS(th)
1.0
1.7
2.4
Vdc

rDS(on)
0.75
1.0
1.0
1.4
gFS
450
mMhos
pF
Ohms
Input Capacitance
(VDS = 5.0 V)
Ciss
45
Output Capacitance
(VDS = 5.0 V)
Coss
25
(VDG = 5.0 V)
Crss
5.0
td(on)
2.5
tr
2.5
td(off)
15
tf
0.8
QT
1400
pC
IS
0.3
Pulsed Current
ISM
0.75
Forward Voltage(2)
VSD
0.85
TurnOn Delay Time
Rise Time
TurnOff Delay Time

RL = 50 )
Fall Time
ns

Continuous Current

1.6
1.0
1.4
VGS = 4 V
0.8
0.9
0.7
0.6
VGS = 3.5 V
0.5
0.4
VGS = 3 V
0.3
0.2
VGS = 2.5 V
0.1
1
4
7
8
2
3
5
6
470
VGS = 4.5 V
1.0
ID = 100 mA
0.8
VGS = 10 V
0.6
ID = 300 mA
0.4
0.2
0
0
1.2
10
0
60 40 20
20 40 60 80
TEMPERATURE (C)
100 120 140 160
MMBF2201NT1
1.2
10
ID = 300 mA
VGS = 4.5 V
1.0
0.8
0.6
VGS = 10 V
0.4
0.2
0
0
0
3
4
5
6
7
8
GATE SOURCE VOLTAGE (VOLTS)
10
Figure 3. On Resistance versus Gate Source

Voltage
0.1
0.2
0.5
0.3
0.4
0.6
0.8
45
1.0
VGS = 0 V
F = 1 mHz
40
35
C, CAPACITANCE (pF)
I S , SOURCE CURRENT (AMPS)
0.7
0.1
0.01
30
25
20
Ciss
15
Coss
10
Crss
5
0
0.001
0
0.1
0.2 0.3 0.4
0.5 0.6
0.7 0.8 0.9
VSD, SOURCE DRAIN FORWARD VOLTAGE (VOLTS)
1.0
4
8
12
16
6
10
14
Figure 5. Source Drain Forward Voltage
18
20
1.0
0.9
0.8
55
0.7
25
150
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
471
MOTOROLA
MMBF2202PT1

Life
PCHANNEL
ENHANCEMENTMODE
TMOS MOSFET
rDS(on) = 2.2 OHM
3 DRAIN
1
GATE
Miniature SC70/SOT323 Surface Mount Package Saves

Board Space
CASE 41902, STYLE 7

SC70/SOT323
2 SOURCE

Symbol
Value
Unit
VDSS
20
Vdc
VGS
20
Vdc

ID
ID
IDM
300
240
750
mAdc

Derate above 25C
PD
150
1.2
mW
mW/C
TJ, Tstg
55 to 150
RJA
833
C/W
TL
260
Rating
DEVICE MARKING
P3
Reel Size
Tape Width
Quantity
MMBF2202PT1
Device
8 mm embossed tape
3000
MMBF2202PT3
13
8 mm embossed tape
10,000
REV 1
472
MMBF2202PT1
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
20
Vdc
1.0
10
OFF CHARACTERISTICS
(VGS = 0 Vdc, ID = 10 A)
Adc

IDSS
IGSS
100
nAdc

VGS(th)
1.0
1.7
2.4
Vdc

rDS(on)
1.5
2.0
2.2
3.5
gFS
600
mMhos
pF
Ohms
Input Capacitance
(VDS = 5.0 V)
Ciss
50
Output Capacitance
(VDS = 5.0 V)
Coss
45
(VDG = 5.0 V)
Crss
20
td(on)
2.5
tr
1.0
td(off)
16
tf
8.0
QT
2700
pC
IS
0.3
Pulsed Current
ISM
0.75
Forward Voltage(2)
VSD
1.5
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 15 Vdc,
RL = 75 ,
ID = 200 mAdc,
mAdc
VGEN = 10 V, RG = 6.0 )
Fall Time
(VDS = 16 V, VGS = 10 V,
ID = 200 mA)
ns

Continuous Current

473
MMBF2202PT1
4.0
10
ID = 200 mA
10
3.5
VGS = 4.5 V
ID = 50 mA
3.0
2.5
2.0
VGS = 10 V
ID = 200 mA
1.5
1.0
0.5
0
40
20
20
40
60
80
100 120
140
TEMPERATURE (C)
Figure 1. On Resistance versus GateSource Voltage
474
160
MMBF2202PT1
1.0
0.9
5
4
VGS = 4.5 V
3
VGS = 10 V
2
1
0.8
0.7
55
0.6
0.5
150
25
0.4
0.3
0.2
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.5
1.0
1.5
2.0 2.5
3.0
3.5 4.0
5.5
6.0
10
0.8
25
0.1
150
0.01
VGS = 5 V
0.7
0.6
VGS = 4.5 V
0.5
VGS = 4 V
0.4
0.3
VGS = 3.5 V
0.2
VGS = 3 V
0.1
0.001
4.5 5.0
1
IS , SOURCE CURRENT (AMPS)
0.5
1.0
1.5
2.0
2.5
VSD, SOURCEDRAIN FORWARD VOLTAGE (VOLTS)
Figure 5. SourceDrain Forward Voltage
Figure 6. On Region Characteristics
50
45
VGS = 0 V
f = 1 MHz
C, CAPACITANCE (pF)
40
35
30
25
20
Ciss
15
Coss
10
5
0
Crss
0
10
12
14
16
18
20
475
MOTOROLA
MMFT107T1
Medium Power Field Effect

Transistor
NChannel EnhancementMode
Silicon Gate TMOS
SOT223 for Surface Mount
This TMOS medium power field effect transistor is designed for

high speed, low loss power switching applications such as
switching regulators, dcdc converters, solenoid and relay drivers.
The device is housed in the SOT223 package which is designed
for medium power surface mount applications.
Silicon Gate for Fast Switching Speeds
MEDIUM POWER
TMOS FET
250 mA, 200 VOLTS
RDS(on) = 14 OHM MAX
RDS(on) = 14 Ohm Max

2,4 DRAIN
Low Drive Requirement
2
3

The formed leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
Use MMFT107T1 to order the 7 inch/1000 unit reel

TO261AA
1
GATE
3 SOURCE

Rating
Symbol
Value
Unit
VDSS
200
Volts
VGS
20
Volts
Drain Current
ID
250
mAdc

Derate above 25C
PD
0.8
6.4
Watts
mW/C
TJ, Tstg
65 to 150
RJA
156
C/W
TL
260
10
C
Sec
GatetoSource Voltage NonRepetitive
DEVICE MARKING
FT107
Time in Solder Bath
1. Device mounted on FR4 glass epoxy printed circuit using minimum recommended footprint.
REV 3
476
MMFT107T1
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
200
Vdc

(VDS = 130 V, VGS = 0)
IDSS
30
nAdc
GateBody Leakage Current Reverse

(VGS = 15 Vdc, VDS = 0)
IGSS
10
nAdc

VGS(th)
1.0
3.0
Vdc

(VGS = 10 Vdc, ID = 200 mA)
RDS(on)
14
Ohms
DraintoSource OnVoltage
(VGS = 10 V, ID = 200 mA)
VDS(on)
2.8
Vdc
(VDS = 25 V, ID = 250 mA)
gfs
300
mmhos
Ciss
60
pF
Coss
30
Crss
6.0
VF
0.8
IS
250
mA
ISM
500
OFF CHARACTERISTICS
(VGS = 0, ID = 10 A)
Input Capacitance
Output Capacitance
(VDS = 25 V
V, VGS = 0,
0
f = 1.0 MHz)
SOURCE DRAIN DIODE CHARACTERISTICS

Diode Forward Voltage
Continuous Source Current, Body
Diode
(VGS = 0,
IS = 250 mA)
Pulsed Source Current, Body Diode


2.5
500
1.5
VDS = 10 V
VGS = 10 V
I D, DRAIN CURRENT (mA)
TJ = 25C
5V
6V
4V
1
3V
0.5
4
6
8
300
200
100
0
0
400
10
TJ = 125C
25C
55C
2
3
4
477
MMFT107T1
RDS(on) , DRAINSOURCE RESISTANCE (NORMALIZED)
RDS(on) , DRAINSOURCE RESISTANCE (OHMS)
10
VGS = 10 V
8
TJ = 125C
4
25C
2
55C
0
100
200
300
400
500
ID = 1 A
VGS = 10 V
0.1
75
50
25
0
25
50
75
100
125
150
250
VGS = 0 V
f = 1 MHz
TJ = 25C
200
C, CAPACITANCE (pF)
10
0.1
TJ = 125C
150
100
Ciss
50
25C
Coss
Crss
0.01
0.3
0.6
0.9
1.2
1.5
VSD, SOURCEDRAIN DIODE FORWARD VOLTAGE (VOLTS)
10
15
20
25
30
10
2
ID = 200 mA
gFS, TRANSCONDUCTANCE (mhos)
8
7
VDS = 100 V
6
5
4
160 V
3
2
VDS = 10 V
1.5
1
TJ = 55C
0.5
25C
125C
1
0
0.5
1.5
2
2.5
3
3.5
4.5
Figure 7. Gate Charge versus GatetoSource Voltage
478
100
200
300
400
500
Figure 8. Transconductance
MOTOROLA
MMFT960T1

Transistor
Silicon Gate TMOS

MEDIUM POWER
TMOS FET
300 mA
60 VOLTS
RDS(on) = 1.7 OHM MAX
RDS(on) = 1.7 Ohm Max

2,4 DRAIN
2
3


TO261AA
1
GATE
3 SOURCE

Rating
Symbol
Value
Unit
VDS
60
Volts
VGS
30
Volts
Drain Current
ID
300
mAdc

Derate above 25C
PD
0.8
6.4
Watts
mW/C
TJ, Tstg
65 to 150
RJA
156
C/W
TL
260
10
C
Sec
DEVICE MARKING
FT960
Time in Solder Bath
REV 3
479
MMFT960T1
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
60
Vdc

(VDS = 60 V, VGS = 0)
IDSS
10
Adc

(VGS = 15 Vdc, VDS = 0)
IGSS
50
nAdc

VGS(th)
1.0
3.5
Vdc

(VGS = 10 Vdc, ID = 1.0 A)
RDS(on)
1.7
Ohms
(VGS = 10 V, ID = 0.5 A)
(VGS = 10 V, ID = 1.0 A)
VDS(on)
0.8
1.7
gfs
600
mmhos
Ciss
65
pF
Coss
33
Crss
7.0
Qg
3.2
Qgs
1.2
Qgd
2.0
OFF CHARACTERISTICS
(VGS = 0, ID = 10 A)
(VDS = 25 V, ID = 0.5 A)
Vdc
Input Capacitance
(VDS = 25 V
V, VGS = 0,
0
f = 1.0 MHz)
Output Capacitance
Total Gate Charge
(VGS = 10 V,
V ID = 1.0
1 0 A,
A
VDS = 48 V)
GateSource Charge
GateDrain Charge
nC

5
1
TJ = 25C
TJ = 25C
VGS = 10 V
8V
7V
2
6V
5V
TJ = 55C
0.8
TJ = 125C
0.6
0.4
VDS = 10 V
0.2
4V
0
0
4
6
8
480
10
2
4
6
8
10
MMFT960T1
5
VGS = 10 V
4
3
TJ = 125C
2
25C
1
55C
0
0.5
1
1.5
2
2.5
10
ID = 1 A
VGS = 10 V
0.1
75
50
25
0
25
50
75
100
125
150
250
VGS = 0 V
f = 1 MHz
TJ = 25C
200
C, CAPACITANCE (pF)
225
TJ = 125C
TJ = 25C
0.1
175
150
125
100
Ciss
75
Coss
50
Crss
25
0
0.3
0.6
0.9
1.2
1.5
10
30
9
ID = 1 A
TJ = 25C
8
7
6
VDS = 30 V
VDS = 48 V
5
4
3
2
1
0
10
15
20
25
gFS , TRANSCONDUCTANCE (mhos)
0.5
1.5
2
2.5
3
3.5
VDS = 10 V
1.5
1
TJ = 55C
25C
0.5
125C
0
0.5
1
1.5
2.5
481
MOTOROLA
MMFT2406T1

Transistor
NChannel Enhancement Mode

Silicon Gate TMOS EFET
MEDIUM POWER
TMOS FET
700 mA
240 VOLTS
RDS(on) = 6.0 OHM

switching regulators, converters, solenoid and relay drivers. The
device is housed in the SOT223 package which is designed for
High Voltage 240 Vdc

1

The formed leads absorb thermal stress during soldering,
Use MMFT2406T1 to order the 7 inch/1000 unit reel.
Use MMFT2406T3 to order the 13 inch/4000 unit reel.
2
3

TO261AA
G
S

Symbol
Value
Unit
VDS
240
Vdc
Rating
VGS
20
Vdc
Drain Current
ID
700
mAdc

Derate above 25C
PD
1.5
12
Watts
mW/C
TJ, Tstg
65 to 150
RJA
83.3
C/W
TL
260
10
C
Sec
DEVICE MARKING
T2406
Thermal Resistance JunctiontoAmbient (surface mounted)(1)
Lead Temperature for Soldering Purposes, 1/16 from case
Time in Solder Bath
REV 1
482
MMFT2406T1
Characteristics
Symbol
Min
Max
Unit
V(BR)DSS
240
Vdc

(VDS = 120 V, VGS = 0)
IDSS
10
Adc

(VGS = 15 Vdc, VDS = 0)
IGSS
100
nAdc

VGS(th)
0.8
2.0
Vdc

(VGS = 2.5 Vdc, ID = 0.1 Adc)
(VGS = 10 Vdc, ID = 0.5 Adc)
RDS(on)
10
6.0
(VGS = 10 V, ID = 0.5 A)
VDS(on)
3.0
Vdc
gFS
300
mmhos
Ciss
125
pF
Coss
50
Crss
20
OFF CHARACTERISTICS
(VGS = 0, ID = 100 A)
(VDS = 6.0 V, ID = 0.5 A)
Ohms
Input Capacitance
Output Capacitance
(VDS = 25 V
V, VGS = 0,
0
f = 1.0 MHz)
483
MOTOROLA
MMFT6661T1

Transistor
Silicon Gate TMOS

MEDIUM POWER
TMOS FET
500 mA
90 VOLTS
RDS(on) = 4.0 OHM MAX
RDS(on) = 4.0 Ohm Max

2,4 DRAIN
Low Drive Requirement, VGS = 2.0 Volts Max
2
3


TO261AA
1
GATE
3 SOURCE

Rating
Symbol
Value
Unit
VDS
90
Vdc
VGS
30
Vdc
Drain Current
ID
500
mAdc

Derate above 25C
PD
0.8
6.4
Watts
mW/C
TJ, Tstg
65 to 150
RJA
156
C/W
TL
260
10
C
Sec
DEVICE MARKING
T6661
Time in Solder Bath
1. Device mounted on FR4 glass epoxy printed circuit board using minimum recommended footprint.
REV 4
484
MMFT6661T1
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
90
Vdc

(VDS = 90 V, VGS = 0)
IDSS
10
Adc

(VGS = 15 Vdc, VDS = 0)
IGSS
100
nAdc

VGS(th)
0.8
2.0
Vdc

(VGS = 10 Vdc, ID = 1.0 Adc)
RDS(on)
4.0
Ohms
(VGS = 10 V, ID = 1.0 A)
(VGS = 5.0 V, ID = 0.3 A)
VDS(on)
4.0
1.6
gFS
200
mmhos
Ciss
36
pF
Coss
16
Crss
6.0
Qg
1.7
Qgs
0.34
Qgd
0.23
OFF CHARACTERISTICS
(VGS = 0, ID = 10 A)
(VDS = 25 V, ID = 0.5 A)
Vdc
Input Capacitance
(VDS = 25 V
V, VGS = 0,
0
f = 1.0 MHz)
Output Capacitance
Total Gate Charge
(VGS = 10 V,
V ID = 1.0
1 0 A,
A
VDS = 72 V)
GateSource Charge
GateDrain Charge
nC

1.5
VDS = 10 V
TJ = 25C
2.5
7V
8V
VGS = 10 V
6V
1.5
5V
1
4V
0.5
0
0
4
6
8
10
TJ = 55C
25C
125C
1.2
0.9
0.6
0.3
2
4
6
485
MMFT6661T1
7
VGS = 10 V
TJ = 125C
25C
2
55C
0
0.3
0.6
0.9
1.2
1.5
10
ID = 1 A
VGS = 10 V
0.1
75
50
25
0
25
50
75
100
100
VGS = 0 V
f = 1 MHz
TJ = 25C
80
C, CAPACITANCE (pF)
90
TJ = 125C
TJ = 25C
0.1
70
60
50
Ciss
40
30
Coss
20
Crss
10
0
0.5
1
1.5
10
10
15
20
25
30
1
ID = 1 A
TJ = 25C
VDS = 72 V
6
0.2
0.4
0.6 0.8
1
1.2 1.4
1.6
1.8
VDS = 10 V
0.8
0.6
TJ = 55C
25C
0.4
125C
0.2
486
Figure 6. Capacitance versus DrainSource Voltage
gFS , TRANSCONDUCTANCE (mhos)
150
10
0.01
125
0.3
0.6
0.9
1.2
1.5
MOTOROLA
TMOS Switching
MPF910
3 DRAIN
2
GATE
1 SOURCE
1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VDS
60
Vdc
VGS
VGSM
20
40
Vdc
Vpk
ID
IDM
0.5
1.0
Adc

Derate above 25C
MPF910
PD
1.0
8.0
Watts
mW/C

Derate above 25C
MFE910
PD
6.25
50
Watts
mW/C
TJ, Tstg
65 to +150

GateSource Voltage
Continuous
Drain Current Continuous(1)
Pulsed(2)

Temperature Range
CASE 2905, STYLE 22

TO92 (TO226AE)

Characteristic
Symbol
Min
Typ
Max
Unit
ZeroGateVoltage Drain Current

(VDS = 40 V, VGS = 0)
IDSS
0.1
10
Adc

(VGS = 10 V, VDS = 0)
IGSS
0.01
10
nAdc
V(BR)DSS
60
90
Vdc

(VDS = VGS, ID = 1.0 mA)
VGS(th)
0.3
1.5
2.5
Vdc
(VGS = 10 V, ID = 500 mA)
VDS(on)
2.5
Vdc

(VDS = 25 V, VGS = 10 V)
ID(on)
500
mA
(VDS = 15 V, ID = 500 mA)
gfs
100
mmhos
OFF CHARACTERISTICS

(VGS = 0, ID = 100 A)
ON CHARACTERISTICS
300 s, Duty Cycle
2.0%.
REV 1
487
MPF910
RESISTIVE SWITCHING
+25 V
To Sampling Scope
50 Input
23
20 dB
50 Attenuator
Vin
40 pF
Pulse Generator
50
Vout
50 1.0 M
toff
ton
90%
90%
10%
Output Vout
Inverted
50%
Input Vin
10%
90%
50%
Pulse
Width
10 v
1.6
2.0
I D(on), DRAIN CURRENT (AMPS)
V GS(th) , THRESHOLD VOLTAGE
2.0
VDS = VGS
ID = 1.0 mA
1.2
0.8
0.4
0
50
100
0
50
TJ, JUNCTION TEMPERATURE
150 (C)
488
VGS = 10 V
1.6
9.0 V
1.2
7.0 V
8.0 V
6.0 V
0.8
5.0 V
0.4
4.0 V
1.0
2.0
3.0
4.0
MPF910
100
VGS = 10 V
9.0 V
1.6
C, CAPACITANCE (pF)
I D(on), DRAIN CURRENT (AMPS)
2.0
8.0 V
1.2
7.0 V
0.8
6.0 V
5.0 V
0.4
80
VGS = 10 V
60
40
Ciss
20
Coss
4.0 V
Crss
20
10
30
40
V DS , DRAINSOURCE VOLTAGE (VOLTS)
40
50
60
10
20
30

10
ID = 1.5 A
1.0 A
VGS = 10 V
5.0
0.5 A
1.0
0.5
0.4
0.3
0.2
0.1
50
30 10
10 30 50 70 90 110 130 150

489
MOTOROLA
TMOS Switching
MPF930
MPF960
MPF990
3 DRAIN
2
GATE
1 SOURCE
MAXIMUM RATINGS
Rating
Symbol
MPF930
MPF960
MPF990
Unit
VDS
35
60
90
Vdc
Drain Gate Voltage
VDG
35
60
90
Vdc
GateSource Voltage
Continuous
Drain Current
Continuous(1)
Pulsed(2)
1
2
VGS
VGSM
20
40
ID
IDM
2.0
3.0
Vdc
Vpk
CASE 2905, STYLE 22

TO92 (TO226AE)
Adc

@ TA = 25C
Derate above 25C
PD

Temperature Range
Thermal Resistance
1.0
8.0
Watts
mW/C
TJ, Tstg
55 to 150
JA
125
C/W

Characteristic
Symbol
Min
Typ
Max
Unit
35
60
90
IGSS
50
nAdc
IDSS
10
Adc
VGS(Th)
1.0
3.5
Vdc
MPF930
MPF960
MPF990
0.4
0.6
0.6
0.7
0.8
1.2
(ID = 1.0 Adc)
MPF930
MPF960
MPF990
0.9
1.2
1.2
1.4
1.7
2.4
(ID = 2.0 Adc)
MPF930
MPF960
MPF990
2.2
2.8
2.8
3.0
3.5
4.8
OFF CHARACTERISTICS
(VGS = 0, ID = 10 Adc)
V(BR)DSX
MPF930
MPF960
MPF990
Vdc
(VDS = Maximum Rating, VGS = 0)
(ID = 1.0 mAdc, VDS = VGS)
DrainSource OnVoltage (VGS = 10 Vdc)
(ID = 0.5 Adc)
VDS(on)
Vdc
300 s, Duty Cycle
2.0%.
REV 2
490
MPF930 MPF960 MPF990

Characteristic
Symbol
Min
Typ
Max
Unit
0.9
1.2
1.2
1.4
1.7
2.0
ID(on)
1.0
2.0
Amps
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
70
pF

(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Crss
20
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Coss
49
pF
gfs
200
380
mmhos
TurnOn Time
ton
7.0
15
ns
TurnOff Time
toff
7.0
15
ns
(VGS = 10 Vdc, ID = 1.0 Adc)
rDS(on)
MPF930
MPF960
MPF990

(VDS = 25 Vdc, ID = 0.5 Adc)
v 300 s, Duty Cycle v 2.0%.
RESISTIVE SWITCHING
+25 V
TO SAMPLING SCOPE
50 INPUT
23
PULSE GENERATOR
20 dB
50 ATTENUATOR
Vin
40 pF
50
50
1.0 M
ton
Vout
toff
90%
90%
OUTPUT
V
INVERTED out
10%
90%
10 V
INPUT
Vin
50%
10%
PULSE
WIDTH
50%
491
200
10
180
5.0
VGS = 0 V
160
VGS = 10 V
C, CAPACITANCE (pF)
MPF930 MPF960 MPF990
2.0
1.0
0.5
140
Coss
120
100
80
Ciss
60
40
0.2
Crss
20
0.1
55
35
15
85 105
+5.0 25
45 65
125
145
5.0
10
20
30
40
50
2.4
2.8
VGS = 10 V
2.1
VDS = 10 V
1.8
1.5
1.2
0.9
0.6
2.4
9.0 V
2.0
1.6
7.0 V
1.2
6.0 V
0.8
5.0 V
0.3
0.4
1.0
6.0 7.0 8.0

2.0 3.0 4.0 5.0
9.0
10
8.0 V
4.0 V
0
5.0
Figure 5. Transfer Characteristic
2.8
10
20
30
40
50
Figure 6. Output Characteristic
VGS = 10 V
2.4
9.0 V
2.0
8.0 V
1.6
7.0 V
1.2
6.0 V
0.8
5.0 V
0.4
0.2
4.0 V
3.0 V
0
0.5
1.0
2.0
3.0
4.0
5.0
Figure 7. Saturation Characteristic
492
MOTOROLA
TMOS FET Transistors

MPF6659
MPF6660
MPF6661
3 DRAIN
2
GATE
1 SOURCE
MAXIMUM RATINGS
Rating
Symbol
MPF6659
MPF6660
MPF6661
Unit
VDS
35
60
90
Vdc
Drain Gate Voltage
VDG
35
60
90
Vdc
GateSource Voltage
Continuous
Drain Current
Continuous(1)
Pulsed(2)
1
2
VGS
VGSM
20
40
ID
IDM
2.0
3.0
Vdc
Vpk
CASE 2905, STYLE 22

TO92 (TO226AE)
Adc

@ TC = 25C
Derate above 25C
PD

@ TA = 25C
Derate above 25C
PD

Temperature Range
TJ, Tstg
2.5
20
Watts
mW/C
1.0
8.0
Watts
mW/C
55 to +150

Characteristic
Symbol
Min
Typ
Max
Unit

(VDS = Maximum Rating, VGS = 0)
IDSS
10
Adc

(VGS = 15 Vdc, VDS = 0)
IGSS
100
nAdc
35
60
90
0.8
1.4
2.0
MPF6659
MPF6660
MPF6661
1.8
3.0
4.0
MPF6659
MPF6660
MPF6661
0.8
0.9
0.9
1.5
1.5
1.6
OFF CHARACTERISTICS

(VGS = 0, ID = 10 Adc)
V(BR)DSX
MPF6659
MPF6660
MPF6661
Vdc
VGS(Th)
(VGS = 10 Vdc, ID = 1.0 Adc)
VDS(on)
(VGS = 5.0 Vdc, ID = 0.3 Adc)
Vdc
Vdc
300 s, Duty Cycle
2.0%.
REV 2
493
MPF6659 MPF6660 MPF6661

Characteristic
Symbol
Min
Typ
Max
Unit
1.8
3.0
4.0
ID(on)
1.0
2.0
Amps
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
30
pF

(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Crss
3.6
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Coss
20
pF
gfs
170
mmhos
Rise Time
tr
5.0
ns
Fall Time
tf
5.0
ns
TurnOn Time
ton
5.0
ns
TurnOff Time
toff
5.0
ns
(VGS = 10 Vdc, ID = 1.0 Adc)
rDS(on)
MPF6659
MPF6660
MPF6661

(VDS = 25 Vdc, ID = 0.5 Adc)
RESISTIVE SWITCHING
+25 V
TO SAMPLING SCOPE
50 INPUT
23
PULSE GENERATOR
20 dB
50 ATTENUATOR
Vin
40 pF
50
50
1.0 M
ton
Vout
toff
90%
90%
OUTPUT
V
INVERTED out
10%
90%
50%
INPUT
494
Vin
10%
PULSE
WIDTH
50%
10 V
MPF6659 MPF6660 MPF6661

2.0
V GS(th), THRESHOLD VOLTAGE
2.0
1.6
VDS = VGS
ID = 1.0 mA
1.2
0.8
0.4
VGS = 10 V
1.6
9.0 V
8.0 V
1.2
7.0 V
6.0 V
0.8
5.0 V
0.4
4.0 V
0
50
100
50
150C
100
VGS = 10 V
9.0 V
1.6
80
8.0 V
1.2
7.0 V
0.8
6.0 V
0.4
4.0
C, CAPACITANCE (pF)
2.0
1.0
2.0
3.0
VGS = 0 V
60
40
Ciss
20
5.0 V
Coss
4.0 V
Crss
0
20
10
30
40
10
40
50
60
20
30

10
5.0
ID = 1.5 A
1.0 A
VGS = 10 V
0.5 A
1.0
0.5
0.4
0.3
0.2
0.1
50
30
10
90
110
10
30
50
70
130
150
Figure 7. OnVoltage versus Temperature
495
MOTOROLA
TMOS FET Transistor

VN0300L
3 DRAIN
2
GATE
1 SOURCE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VDSS
60
Drain Gate Voltage
VDGR
60
Gate Source Voltage

Continuous
VGS
VGSM
20
40
Vdc
Vpk
Continuous Drain Current
1
2
CASE 2904, STYLE 22

TO92 (TO226AA)
ID
200
mA
Pulsed Drain Current
IDM
500
mA

Derate above 25C
PD
350
2.8
mW
mW/C
TJ, Tstg
Symbol
Max
Unit
RJA
312.5
C/W
Maximum Lead Temperature for Soldering

Purposes, 1/16 from case for 10
seconds
TL
300
Operating and Storage Temperature
Characteristics

Characteristic
Symbol
Min
Max
Unit
V(BR)DSS
30
10
500
Drain Source Breakdown Voltage
(VDS = 0, ID = 10 A)

(VDS = 48 Vdc, VGS = 0)
(VDS = 48 Vdc, VGS = 0, TA = 125C)
IDSS
GateBody Leakage
(VDS = 0, VGS = 30 V)
IGSS
100
nA

OnState Drain Current(1)
VGS(th)
0.8
2.5
ID(on)
1.0
DrainSource On Resistance(1)
(VGS = 5.0 V, ID = 0.3 A)
(VGS = 10 V, ID = 1.0 A)
Forward Transconductance(1)
(VDS = 10 V, ID = 0.5 A)
rDS(on)
3.3
1.2
200
1. Pulse Test; Pulse Width < 300 ms, Duty Cycle
gfs
mS
v 2.0%.
REV 1
496
VN0300L
Characteristic
Symbol
Min
Max
Unit
Ciss
100
pF
Coss
95
pF
Crss
25
pF
ton
30
ns
toff
30
ns
Input Capacitance
Output Capacitance
(VDS = 15 Vdc,
Vd VGS = 0,
0
f = 1.0 MHz)
TurnOn Time
TurnOff Time
((VDD = 25 Vdc, ID = 1.0 A,

RL = 24 , RG = 25 )
497
MOTOROLA
TMOS FET Transistor

VN0610LL
3 DRAIN
2
GATE
1 SOURCE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VDSS
60
Vdc
Drain Gate Voltage (RGS = 1 M)
VDGR
60
Vdc
Gate Source Voltage

Continuous
VGS
VGSM
20
40
ID
IDM
190
1000
PD
400
3.2
mW
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit
RJA
312.5
C/W
TL
300
Drain Current
Continuous
Pulsed
1
2
Vdc
Vpk
CASE 2904, STYLE 22

TO92 (TO226AA)
mAdc

Derate above 25C
Characteristics
Purposes, 1/16 from case for 10 seconds

Symbol
Min
Max
Unit
V(BR)DSS
60
Vdc
10
500
IGSSF
100
nAdc
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA)
VGS(th)
0.8
2.5
Vdc

(VGS = 10 V, ID = 500 mA)
(VGS = 10 V, ID = 500 mA, TC = 125C)
rDS(on)
5.0
9.0
(VGS = 5.0 V, ID = 200 mA)
(VGS = 10 V, ID = 500 mA)
VDS(on)
1.5
2.5
ID(on)
750
mAdc
gfs
100
mhos
Characteristic
OFF CHARACTERISTICS
(VGS = 0, ID = 100 A)
(VDS = 48 Vdc, VGS = 0)
(VDS = 48 Vdc, VGS = 0, TJ = 125C)
(VGSF = 30 V, VDS = 0)
Adc
IDSS
OnState Drain Current (VGS = 10 V, VDS 2.0 VDS(on))

Forward Transconductance (VDS 2.0 VDS(on), ID = 500 mA)
Vdc
REV 1
498
VN0610LL
Characteristic
Symbol
Min
Max
Unit
Ciss
60
pF
Coss
25
Crss
5.0
ton
10
toff
10
Input Capacitance
(VDS = 25 Vdc,
Vd VGS = 0,
0
f = 1.0 MHz)
Output Capacitance
TurnOn Delay Time
TurnOff Delay Time
((VDD = 15 Vdc, ID = 600 mA,

Rgen = 25 , RL = 23 )
v 300 ms, Duty Cycle v 10%.
ns
499
VN0610LL
RESISTIVE SWITCHING
+25 V
ton
Vin
PULSE GENERATOR
50
125
20 dB
50 ATTENUATOR
40 pF
50
1.0 M
TO SAMPLING SCOPE
50 INPUT
Vout
OUTPUT
V
INVERTED out
toff
90%
10%
90%
50%
10%
INPUT
Vin
(Vin Amplititude 10 Volts)
2.0
VDS = VGS
ID = 1.0 mA
VGS(th), THRESHOLD VOLTAGE
2.0
1.6
PULSE
WIDTH
1.2
0.8
0.4
VGS = 10 V
1.6
9.0 V
8.0 V
1.2
7.0 V
6.0 V
0.8
5.0 V
0.4
4.0 V
0
50
100
0
50
150
100
VGS = 10 V
9.0 V
1.6
VGS = 0 V
80
8.0 V
1.2
7.0 V
0.8
6.0 V
0.4
4.0
C, CAPACITANCE (pF)
2.0
1.0
2.0
3.0
60
40
Ciss
20
5.0 V
Coss
4.0 V
Crss
0
20
10
30
4100
40
10
20
30
40
50
60

MOTOROLA
TMOS FET Transistor
VN10LM
3 DRAIN
2
GATE
1 SOURCE
1
2
CASE 2905, STYLE 22

TO92 (TO226AE)
MAXIMUM RATINGS
Rating
GateSource Voltage
Continuous
Drain Current Continuous(1)
Pulsed(2)
Derate above 25C
Temperature Range
Symbol
Value
Unit
VDSS
60
Vdc
VGS
VGSM
20
40
Vdc
Vpk
ID
IDM
0.3
1.0
Adc
PD
1.0
8.0
Watts
mW/C
TJ, Tstg
40 to +150

Characteristic
Symbol
Min
Typ
Max
Unit

(VGS = 0, ID = 100 A)
V(BR)DSS
60
Vdc

(VDS = 45 V, VGS = 0)
IDSS
0.1
10
Adc

(VGS = 15 V, VDS = 0)
IGSS1
100
nAdc

(VGS = 15 V, VDS = 0)
IGSS2
100
nAdc
OFF CHARACTERISTICS
2. Pulse Width
300 s, Duty Cycle.
REV 1
4101
VN10LM
Characteristic
Symbol
Min
Typ
Max
Unit

VGS(th)
0.8
2.5
Vdc

(VDS = 15 V, VGS = 10 V)
ID(on)
750
mA
(VDS = 15 V, ID = 500 mA)
gfs
200
mmhos
(VGS = 5.0 V, ID = 200 mA)
VDS(on)1
1.5
Vdc
(VGS = 10 V, ID = 500 mA)
VDS(on)2
2.5
Vdc
(VGS = 5.0 V, ID = 200 mA)
rDS(on)1
7.5
(VGS = 10 V, ID = 500 mA)
rDS(on)2
5.0
Input Capacitance
(VDS = 25 V, VGS = 0, f = 1.0 MHz)
Ciss
60
pF
Output Capacitance
(VDS = 25 V, VGS = 0, f = 1.0 MHz)
Coss
25
pF

(VDS = 25 V, VGS = 0, f = 1.0 MHz)
Crss
5.0
pF
TurnOn Time
(VDS = 15 V, RL = 23 , RG = 50 , Vin = 20 V)
ton
10
ns
TurnOff Time
(VDS = 15 V, RL = 23 , RG = 50 , Vin = 20 V)
toff
10
ns
ON CHARACTERISTICS
4102
MOTOROLA
TMOS FET Transistor

VN2222LL
3 DRAIN
2
GATE
1 SOURCE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VDSS
60
Vdc
VDGR
60
Vdc
GateSource Voltage
Continuous
VGS
VGSM
20
40
Vdc
Vpk
ID
IDM
150
1000
PD
400
3.2
mW
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit
RJA
312.5
C/W
TL
300
Drain Current
Continuous
Pulsed
1
2
CASE 2904, STYLE 22

TO92 (TO226AA)
mAdc

Derate above 25C
Temperature Range
Characteristic
Maximum Lead Temperature for
Soldering Purposes, 1/16 from case
for 10 seconds

Characteristic
Symbol
Min
Max
Unit
V(BR)DSS
60
Vdc
10
500
IGSSF
100
nAdc

VGS(th)
0.6
2.5
Vdc

(VGS = 10 Vdc, ID = 0.5 Adc)
(VGS = 10 Vdc, ID = 0.5 Vdc, TC = 125C)
rDS(on)
7.5
13.5
OFF CHARACTERISTICS
(VGS = 0, ID = 100 Adc)
(VDS = 48 Vdc, VGS = 0)
(VDS = 48 Vdc, VGS = 0, TJ = 125C)
(VGSF = 30 Vdc, VDS = 0)
Adc
IDSS
REV 1
4103
VN2222LL
Characteristic
Symbol
Min
Max
Unit
1.5
3.75
ID(on)
750
mA
gfs
100
mhos
Ciss
60
pF
Coss
25
Crss
5.0
ton
10
toff
10
VDS(on)

(VGS = 10 Vdc, VDS 2.0 VDS(on))
Vdc
Input Capacitance
(VDS = 25 Vdc,
Vd VGS = 0,
0
f = 1.0 MHz)
Output Capacitance
TurnOn Delay Time
TurnOff Delay Time
4104
((VDD = 15 Vdc, ID = 600 mA,

Rgen = 25 , RL = 23 )
ns
VN2222LL
1
2
1.6
TA = 25C
1.8
VGS = 10 V
9V
1.4
1.2
8V
1
7V
0.8
0.6
6V
0.4
5V
0.2
4V
25C
VDS = 10 V
0.8
55C
125C
0.6
0.4
0.2
3V
1
VGS = 10 V
ID = 200 mA
1.6
1.4
1.2
1
0.8
0.6
0.4
60
2.2
1.8
2.4
2
10
20
+20
+60
T, TEMPERATURE (C)
+100
+140

(NORMALIZED)

10
1.2
1.15
VDS = VGS
ID = 1 mA
1.1
1.05
1
0.95
0.9
0.85
0.8
0.75
0.7
60
20
+20
+60
T, TEMPERATURE (C)
+100
+140

Threshold Voltage
4105
MOTOROLA
TMOS FET Transistor

VN2406L
3 DRAIN
2
GATE
1 SOURCE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VDSS
240
Vdc
Drain Gate Voltage
VDGR
60
Vdc
Gate Source Voltage

Continuous
VGS
VGSM
20
40
Vdc
Vpk
1
2
CASE 2904, STYLE 22

TO92 (TO226AA)
ID
200
mAdc
IDM
500
mAdc

Derate above 25C
PD
350
2.8
mW
mW/C
TJ, Tstg
Symbol
Max
Unit
RJA
312.5
C/W

seconds
TL
300
Characteristic

Characteristic
Symbol
Min
Max
Unit
V(BR)DSS
240
Vdc
10
500
(VGS = 0, ID = 100 A)
Adc

(VDS = 120 Vdc, VGS = 0)
(VDS = 120 Vdc, VGS = 0, TA = 125C)
IDSS
Gate Body Leakage

(VDS = 0, VGS = 15 V)
IGSS
100
nAdc

(VGS = 10 V, VDS 2.0 VDS(on))
VGS(th)
0.8
2.0
Vdc
ID(on)
1.0
Adc
(VGS = 2.5 V, ID = 0.1 A)
(VGS = 10 V, ID = 0.5 A)
(VDS = 10 V, ID = 0.5 A)
rDS(on)
10
6.0
300
1. Pulse Test; Pulse Width < 300 s, Duty Cycle
gfs
mS
v 2.0%.
REV 1
4106
VN2406L
Characteristic
Symbol
Min
Max
Unit
Ciss
125
pF
Coss
50
pF
Crss
20
pF
t(on)
8.0
ns
t(r)
8.0
ns
t(off)
23
ns
t(f)
34
ns
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0,
0
f = 1.0 MHz)
TurnOn Time
(VDD = 60 Vdc,
Vd ID = 0.4
0 4 A,
A
RL = 150 , RG = 25 )
TurnOff Time
4107
MOTOROLA
TMOS FET Transistor

VN2410L
3 DRAIN
2
GATE
1 SOURCE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VDSS
240
Vdc
Drain Gate Voltage
VDGR
60
Vdc
Gate Source Voltage

Continuous
VGS
VGSM
20
40
Vdc
Vpk
1
2
CASE 2904, STYLE 22

TO92 (TO226AA)
ID
200
mAdc
IDM
500
mAdc

Derate above 25C
PD
350
2.8
mW
mW/C
TJ, Tstg
Symbol
Max
Unit
RJA
312.5
C/W

seconds
TL
300
Characteristic

Characteristic
Symbol
Min
Max
Unit
V(BR)DSS
240
Vdc
10
500
(VGS = 0, ID = 100 A)
Adc

(VDS = 120 Vdc, VGS = 0)
(VDS = 120 Vdc, VGS = 0, TA = 125C)
IDSS
Gate Body Leakage

(VDS = 0, VGS = 15 V)
IGSS
100
nAdc

(VGS = 10 V, VDS 2.0 VDS(on))
VGS(th)
0.8
2.0
Vdc
ID(on)
1.0
Adc
(VGS = 2.5 V, ID = 0.1 A)
(VGS = 10 V, ID = 0.5 A)
(VDS = 10 V, ID = 0.5 A)
rDS(on)
10
10
300
1. Pulse Test; Pulse Width < 300 s, Duty Cycle
gfs
mS
v 2.0%.
REV 1
4108
VN2410L
Characteristic
Symbol
Min
Max
Unit
Ciss
125
pF
Coss
50
pF
Crss
20
pF
t(on)
8.0
ns
t(r)
8.0
ns
t(off)
23
ns
t(f)
34
ns
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0,
0
f = 1.0 MHz)
TurnOn Time
(VDD = 60 Vdc,
Vd ID = 0.4
0 4 A,
A
RL = 150 , RG = 25 )
TurnOff Time
4109
MOTOROLA
JFETs General Purpose

NChannel Depletion
2N5457
1 DRAIN
3
GATE
2 SOURCE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VDS
25
Vdc
Drain Gate Voltage
VDG
25
Vdc
VGSR
25
Vdc
Gate Current
IG
10
mAdc

Derate above 25C
PD
310
2.82
mW
mW/C
TJ
125
Tstg
65 to +150
Reverse Gate Source Voltage
Storage Channel Temperature Range
1
2
CASE 2904, STYLE 5

TO92 (TO226AA)

Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)GSS
25
Vdc
1.0
200
OFF CHARACTERISTICS
Gate Source Breakdown Voltage
(IG = 10 Adc, VDS = 0)
(VGS = 15 Vdc, VDS = 0)
(VGS = 15 Vdc, VDS = 0, TA = 100C)
IGSS
nAdc
Gate Source Cutoff Voltage

(VDS = 15 Vdc, ID = 10 nAdc)
VGS(off)
0.5
6.0
Vdc
Gate Source Voltage

VGS
2.5
Vdc
IDSS
1.0
3.0
5.0
mAdc
Forward Transfer Admittance Common Source (1)

(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
yfs
1000
5000
mmhos
Output Admittance Common Source (1)

(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
yos
10
50
mmhos
Input Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
4.5
7.0
pF

(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Crss
1.5
3.0
pF
ON CHARACTERISTICS
Zero Gate Voltage Drain Current (1)
(VDS = 15 Vdc, VGS = 0)
1. Pulse Test; Pulse Width
4110
2N5457
14
VDS = 15 V
VGS = 0
RS = 1 M
VDS = 15 V
VGS = 0
f = 1 kHz
12
10
8
6
4
1
2
0
0.1
0.01
1.0
f, FREQUENCY (kHz)
100
10
0.001
Figure 1. Noise Figure versus Frequency
1.2
VGS(off)
^ 1.2 V
1.2
VGS(off)
VGS = 0 V
^ 1.2 V
1.0
I D , DRAIN CURRENT (mA)
10
Figure 2. Noise Figure versus Source

Resistance
1.0
0.2 V
0.8
0.6
0.4 V
0.4
0.6 V
10
15
20
0.8
VDS = 15 V
0.6
0.4
0.2
0.8 V
1.0 V
0.2
0
0.01
0.1
1.0
RS, SOURCE RESISTANCE (Megohms)
25
0
1.2
0.8
0.4
Figure 4. Common Source Transfer

Characteristics
4111
2N5457
4
VGS(off)
VGS(off)
^ 3.5 V
VGS = 0 V
1 V
2
2 V
^ 3.5 V
3
VDS = 15 V
2
3 V
0
10
15
20
0
5
25
^ 5.8 V
VGS = 0 V
10
VGS(off)
1 V
6
2 V
4
3 V
2

Characteristics
10
3
2
1
4
4 V
VGS(off)
^ 5.8 V
6
VDS = 15 V
4
5 V
0
0
10
15
20
25
0
7
5
4
3
2
1

Characteristics
Note: Graphical data is presented for dc conditions. Tabular

data is given for pulsed conditions (Pulse Width = 630
ms, Duty Cycle = 10%). Under dc conditions, self heating in higher IDSS units reduces IDSS.
4112
MOTOROLA
JFET Amplifiers
PChannel Depletion
2N5460
2N5461
2N5462
2 DRAIN
3
GATE
1 SOURCE
MAXIMUM RATINGS
Rating
Drain Gate Voltage
Symbol
Value
Unit
VDG
40
Vdc
VGSR
40
Vdc
IG(f)
10
mAdc

Derate above 25C
PD
350
2.8
mW
mW/C
TJ
65 to +135
Tstg
65 to +150

Forward Gate Current
1
2
CASE 2904, STYLE 7

TO92 (TO226AA)

Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)GSS
40
Vdc
2N5460, 2N5461, 2N5462
5.0
nAdc
2N5460, 2N5461, 2N5462
1.0
Adc
0.75
1.0
1.8
6.0
7.5
9.0
Vdc
0.5
0.8
1.5
4.0
4.5
6.0
OFF CHARACTERISTICS
(IG = 10 Adc, VDS = 0)
(VGS = 20 Vdc, VDS = 0)
(VGS = 30 Vdc, VDS = 0)
(VGS = 20 Vdc, VDS = 0, TA = 100C)
(VGS = 30 Vdc, VDS = 0, TA = 100C)
2N5460, 2N5461, 2N5462

IGSS

(VDS = 15 Vdc, ID = 1.0 Adc)
2N5460
2N5461
2N5462
Gate Source Voltage

(VDS = 15 Vdc, ID = 0.1 mAdc)
2N5460
2N5461
2N5462
VGS(off)
VGS
Vdc
ON CHARACTERISTICS
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
2N5460
2N5461
2N5462
IDSS
1.0
2.0
4.0
5.0
9.0
16
mAdc
2N5460
2N5461
2N5462
yfs
1000
1500
2000
4000
5000
6000
mmhos
Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
yos
75
mmhos
Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
5.0
7.0
pF
Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Crss
1.0
2.0
pF
Noise Figure
(VDS = 15 Vdc, VGS = 0, RG = 1.0 Megohm, f = 100 Hz, BW = 1.0 Hz)
NF
1.0
2.5
dB
Equivalent ShortCircuit Input Noise Voltage

(VDS = 15 Vdc, VGS = 0, f = 100 Hz, BW = 1.0 Hz)
en
60
115
nV Hz

Forward Transfer Admittance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
FUNCTIONAL CHARACTERISTICS
4113
2N5460 2N5461 2N5462

FORWARD TRANSFER ADMITTANCE
versus DRAIN CURRENT
4.0
VDS = 15 V
3.5
3.0
2.5
TA = 55C
2.0
25C
1.5
125C
1.0
0.5
0
0
0.2
0.4 0.6 0.8

1.0
1.2 1.4
1.6
1.8
2.0
Yfs FORWARD TRANSFER ADMITTANCE (m mhos)
DRAIN CURRENT versus GATE

SOURCE VOLTAGE
4000
3000
2000
1000
700
500
VDS = 15 V
f = 1.0 kHz
300
200
0.2
0.3
10
VDS = 15 V
8.0
TA = 55C
7.0
6.0
25C
125C
5.0
4.0
3.0
2.0
1.0
4.0
0.5
1.5
2.0
2.5
3.0
1.0
3.5
4.0
7000
5000
3000
2000
1000
VDS = 15 V
f = 1.0 kHz
700
500
0.5
0.7
1.0
2.0
3.0
ID, DRAIN CURRENT (mA)
5.0
7.0
Figure 5. VGS(off) = 4.0 Volts
16
10000
VDS = 15 V
14
3.0
10000
9.0
2.0

0.5
0.7
1.0
12
TA = 55C
10
8.0
25C
125C
6.0
4.0
2.0
0
0
1.0
2.0
3.0
4.0
5.0
6.0
4114
7.0
8.0
7000
5000
3000
2000
1000
VDS = 15 V
f = 1.0 kHz
700
500
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
2N5460 2N5461 2N5462

10
VDS = 15 V
f = 1.0 kHz
8.0
300
200
IDSS = 3.0 mA
100
70
50
6.0 mA
10 mA
30
7.0
6.0
Ciss
5.0
4.0
3.0
2.0
20
10
0.1
f = 1.0 MHz
VGS = 0
9.0
C, CAPACITANCE (pF)
r oss , OUTPUT RESISTANCE (k ohms)
1000
700
500
Coss
1.0
Crss
0
0.5
1.0
2.0
0.2
5.0
10
Figure 7. Output Resistance

versus Drain Current
40

DrainSource Voltage
5.0
10
VDS = 15 V
VGS = 0
RG = 1.0 Megohm
4.0
3.0
2.0
9.0
10
20
30
1.0
VDS = 15 V
VGS = 0
f = 100 Hz
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
10
20 30 50
100 200 300 500 1000 2000 3000

f, FREQUENCY (Hz)
0
1.0
10,000
10
100
1000
RS, SOURCE RESISTANCE (k Ohms)
Figure 10. Noise Figure versus

Source Resistance
COMMON SOURCE
y PARAMETERS FOR FREQUENCIES
BELOW 30 MHz
vi
Crss
Ciss
10,000
ross
Coss
| yfs | vi
yis = j Ciss
yos = j Cosp * + 1/ross
yfs = yfs |
yrs = j Crss
* Cosp is Coss in parallel with Series Combination of Ciss and Crss.
NOTE:
1. Graphical data is presented for dc conditions. Tabular
data is given for pulsed conditions (Pulse Width = 630 ms,
Duty Cycle = 10%).
Figure 11. Equivalent Low Frequency Circuit
4115
MOTOROLA

JFET VHF/UHF Amplifiers
NChannel Depletion
2N5484
1 DRAIN
2N5486
3
GATE
2 SOURCE
MAXIMUM RATINGS
Rating
Drain Gate Voltage
Drain Current
Derate above 25C
Temperature Range
Symbol
Value
Unit
VDG
25
Vdc
VGSR
25
Vdc
ID
30
mAdc
IG(f)
10
mAdc
PD
350
2.8
mW
mW/C
TJ, Tstg
65 to +150
1
2
CASE 2904, STYLE 5

TO92 (TO226AA)

Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)GSS
25
Vdc
1.0
0.2
nAdc
Adc
0.3
2.0
3.0
6.0
1.0
8.0
5.0
20
3000
4000
6000
8000
100
1000
50
75
75
100
2500
3500
OFF CHARACTERISTICS
(IG = 1.0 Adc, VDS = 0)
(VGS = 20 Vdc, VDS = 0)
(VGS = 20 Vdc, VDS = 0, TA = 100C)
IGSS
VGS(off)
2N5484
2N5486
Vdc
ON CHARACTERISTICS
(VDS = 15 Vdc, VGS = 0)
2N5484
2N5486
IDSS
mAdc

(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
Input Admittance
(VDS = 15 Vdc, VGS = 0, f = 100 MHz)
(VDS = 15 Vdc, VGS = 0, f = 400 MHz)
Output Admittance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
mmhos
Re(yis)
2N5484
2N5486
mmhos
yos
2N5484
2N5486
Output Conductance
(VDS = 15 Vdc, VGS = 0, f = 100 MHz)
(VDS = 15 Vdc, VGS = 0, f = 400 MHz)
2N5484
2N5486
(VDS = 15 Vdc, VGS = 0, f = 100 MHz)
(VDS = 15 Vdc, VGS = 0, f = 400 MHz)
2N5484
2N5486
4116
mmhos
yfs
2N5484
2N5486
mmhos
Re(yos)
mmhos
Re(yfs)
2N5484 2N5486
Characteristic
Symbol
Min
Typ
Max
Unit
Input Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
5.0
pF

(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Crss
1.0
pF
Output Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Coss
2.0
pF
4.0
2.5
3.0
2.0
4.0
16
18
10
14
25
30
20
SMALL SIGNAL CHARACTERISTICS (continued)
Noise Figure
(VDS = 15 Vdc, VGS = 0, RG = 1.0 Megohm, f = 1.0 kHz)
(VDS = 15 Vdc, ID = 1.0 mAdc, RG 1.0 k, f = 100 MHz)
NF
2N5484
2N5484
2N5486
2N5486
Common Source Power Gain

(VDS = 15 Vdc, ID = 1.0 mAdc, f = 100 MHz)
2N5484
2N5484
2N5486
2N5486
dB
Gps
dB
POWER GAIN
24
f = 100 MHz
PG , POWER GAIN (dB)
20
16
12
400 MHz
Tchannel = 25C
VDS = 15 Vdc
VGS = 0 V
8.0
4.0
0
2.0
4.0
6.0
8.0
10
12
14
Figure 1. Effects of Drain Current
4117
2N5484 2N5486
NEUTRALIZING
COIL
INPUT
TO 50
SOURCE
C2
L1
C4
C5
Rg
*L2
*L3
7.0 pF
1.8 pF
C2
1000 pF
17 pF
TO 500
LOAD
L2
C6
C7
COMMON
VDS
+15 V
VGS
*L1
400 MHz
C1
CASE
L3
NOTE:
Adjust VGS for

ID = 50 mA
VGS < 0 Volts
100 MHz
C3
C1
ID = 5.0 mA
The noise source is a hotcold body

(AIL type 70 or equivalent) with a
test receiver (AIL type 136 or equivalent).
**L1
17 turns, (approx. depends upon circuit layout) AWG #28

enameled copper wire, close wound on 9/32 ceramic coil
form. Tuning provided by a powdered iron slug.
41/2 turns, AWG #18 enameled copper wire, 5/16 long,
3/8 I.D. (AIR CORE).
**L2
**L3
VALUE
Reference
Designation
C3
3.0 pF
1.0 pF
C4
112 pF
0.88.0 pF
C5
112 pF
0.88.0 pF
C6
0.0015 F
0.001 F
C7
0.0015 F
0.001 F
L1
3.0 H*
0.2 H**
L2
0.15 H*
0.03 H**
L3
0.14 H*
0.022 H**

form. Tuning provided by an aluminum slug.
1 turn, AWG #16 enameled copper wire, 3/8 I.D.
(AIR CORE).
1/2 turn, AWG #16 enameled copper wire, 1/4 I.D.
(AIR CORE).
Figure 2. 100 MHz and 400 MHz Neutralized Test Circuit
NOISE FIGURE
(Tchannel = 25C)
6.5
10
ID = 5.0 mA
VDS = 15 V
VGS = 0 V
5.5
8.0
6.0
f = 400 MHz
4.0
2.0
4.5
f = 400 MHz
3.5
2.5
100 MHz
100 MHz
1.5
0
0
2.0
16
4.0 6.0 8.0
10
12
14
18
20
2.0
Figure 3. Effects of DrainSource Voltage
4.0
6.0
8.0
10
12
14
INTERMODULATION CHARACTERISTICS
Pout , OUTPUT POWER PER TONE (dB)
+ 40
3RD ORDER INTERCEPT
+ 20
VDS = 15 Vdc
f1 = 399 MHz
f2 = 400 MHz
0
20
40
60
80
100
FUNDAMENTAL
OUTPUT @ IDSS,
0.25 IDSS
120
140
160
120
100
3RD ORDER IMD

OUTPUT @ IDSS,
0.25 IDSS
80
60
40
20
Pin, INPUT POWER PER TONE (dB)
+ 20
Figure 5. Third Order Intermodulation Distortion
4118
2N5484 2N5486
COMMON SOURCE CHARACTERISTICS
30
20
bis @ IDSS
10
7.0
5.0
3.0
gis @ IDSS
2.0
gis @ 0.25 IDSS
1.0
0.7
0.5
0.3
10
bis @ 0.25 IDSS

20
30
50 70 100
200 300
f, FREQUENCY (MHz)
grs , REVERSE TRANSADMITTANCE (mmhos)

brs , REVERSE SUSCEPTANCE (mmhos)
gis, INPUT CONDUCTANCE (mmhos)

bis, INPUT SUSCEPTANCE (mmhos)
ADMITTANCE PARAMETERS
(VDS = 15 Vdc, Tchannel = 25C)
500 700 1000
5.0
3.0
2.0
brs @ IDSS
1.0
0.7
0.5
0.25 IDSS
0.3
0.2
0.1
0.07
0.05
grs @ IDSS, 0.25 IDSS

10
20
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
10
10
7.0
5.0
gfs @ IDSS
gfs @ 0.25 IDSS
3.0
2.0
1.0
0.7
0.5
0.3
0.2
10
30
Figure 7. Reverse Transfer Admittance (yrs)
|bfs| @ IDSS
|bfs| @ 0.25 IDSS
gos, OUTPUT ADMITTANCE (mhos)

bos, OUTPUT SUSCEPTANCE (mhos)
gfs, FORWARD TRANSCONDUCTANCE (mmhos)

|b fs|, FORWARD SUSCEPTANCE (mmhos)
Figure 6. Input Admittance (yis)
20
5.0
bos @ IDSS and 0.25 IDSS
2.0
1.0
0.5
0.2
gos @ IDSS
0.1
0.05
gos @ 0.25 IDSS
0.02
0.01
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
Figure 8. Forward Transadmittance (yfs)
10
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
Figure 9. Output Admittance (yos)
4119
2N5484 2N5486
SPARAMETERS
(VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz)
30
20
10
0
1.0
40
350
100
340
330
320
40
310
50
20
10
340
330
0.4
320
0.3
400
310
ID = IDSS, 0.25 IDSS
300
0.8
900
500
ID = IDSS
60
800
300
400
60
500
0.7
600
0.6
300
0.1
500
70
290
400
700
800
700
800
290
0.2
700
600
600
80
350
300
200
50
70
200
100
0.9
30
ID = 0.25 IDSS
280
80
300
280
0.0
200
900
270
90
100
260
100
260
110
250
110
250
120
240
120
240
130
230
130
230
140
220
140
220
90
900
150
160
170
180
190
200
210
150
160
Figure 10. S11s

30
20
10
350
170
340
330
30
20
10
80
90
700
500
0.3
ID = 0.25 IDSS
500
0
350
340
330
100 200
ID = 0.25 IDSS
300
1.0
400
100 200
500
300
600
400
700
0.9
500
800
600
ID = IDSS
700
900
800
900
0.8
310
50
300
60
290
70
280
80
270
90
270
260
100
260
250
110
250
240
120
240
230
130
230
220
140
220
320
310
300
0.7
290
0.3
280
0.6
100
400
400
110
0.4
800
600
100
210
900
700
600
200
40
0.5
60
900
190
320
0.6
50
800
180
Figure 11. S12s
40
70
270
100
300
200
0.4
100
0.5
300
120
ID = IDSS
200
130
0.6
140
150
160
170
180
190
Figure 12. S21s

4120
200
210
150
160
170
180
190
200
210
Figure 13. S22s

2N5484 2N5486
COMMON GATE CHARACTERISTICS
(VDG = 15 Vdc, Tchannel = 25C)
10
7.0
5.0
grg , REVERSE TRANSADMITTANCE (mmhos)

brg , REVERSE SUSCEPTANCE (mmhos)
gig, INPUT CONDUCTANCE (mmhos)

big, INPUT SUSCEPTANCE (mmhos)
20
gig @ IDSS
grg @ 0.25 IDSS
3.0
2.0
1.0
0.7
0.5
big @ IDSS
big @ 0.25 IDSS
0.3
0.2
10
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
0.5
0.3
0.1
0.07
0.05
0.25 IDSS
0.03
0.02
0.01
0.007
0.005
500 700 1000
brg @ IDSS
0.2
gig @ IDSS, 0.25 IDSS

10
10
7.0
5.0
gfg @ IDSS
3.0
gfg @ 0.25 IDSS
2.0
1.0
0.7
0.5
bfg @ IDSS
0.3
brg @ 0.25 IDSS
0.2
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
Figure 15. Reverse Transfer Admittance (yrg)
gog, OUTPUT ADMITTANCE (mmhos)

bog, OUTPUT SUSCEPTANCE (mmhos)
gfg , FORWARD TRANSCONDUCTANCE (mmhos)

bfg , FORWARD SUSCEPTANCE (mmhos)
Figure 14. Input Admittance (yig)
20
1.0
0.7
0.5
bog @ IDSS, 0.25 IDSS
0.3
0.2
0.1
0.07
0.05
gog @ IDSS
0.03
0.02
gog @ 0.25 IDSS
0.1
0.01
10
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
Figure 16. Forward Transfer Admittance (yfg)
10
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
Figure 17. Output Admittance (yog)
4121
2N5484 2N5486
SPARAMETERS
30
20
10
350
340
330
30
0.7
40
100
310
50
300
60
290
70
280
80
350
340
330
320
0.04
200
300
0.03
400
100
500
200
0.5
ID = IDSS
0.4
310
600
300
60
70
40
10
ID = 0.25 IDSS
0.6
50
320
20
0.02
700
400
500
300
800
600
900
0.01
290
700
80
800
0.3
900
90
270
100
260
90
250
270
500
600
100
ID = IDSS
110
280
0.0
100
110
700
600
700
260
ID = 0.25 IDSS
250
0.01
800
240
120
120
240
800
0.02
900
230
130
230
130
900
220
140
150
160
170
180
190
200
140
210
20
10
350
150
160
170
180
190
200
210
340
330
Figure 19. S12g
340
330
30
0.5
40
220
0.04
Figure 18. S11g
30
0.03
320
20
10
40
0
1.5
1.0
100
100
0.4
ID = IDSS
350
300
200
500
320
400
700
600
800
0.9
900
310
50
300
60
290
70
280
80
270
90
270
100
260
100
260
110
250
110
250
120
240
120
240
130
230
130
230
140
220
140
220
50
100
0.3
0.8
60
0.2
70
310
ID = 0.25 IDSS
80
0.1
300
0.7
290
280
0.6
900
90
900
150
160
170
180
190
Figure 20. S21g

4122
200
210
150
160
170
180
190
200
210
Figure 21. S22g

MOTOROLA
JFET Switching
NChannel Depletion
2N5555
1 DRAIN
3
GATE
2 SOURCE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VDS
25
Vdc
Drain Gate Voltage
VDG
25
Vdc
Gate Source Voltage
VGS
25
Vdc
IGF
10
mAdc

Derate above 25C
PD
350
2.8
mW
mW/C
TJ
65 to +150
Tstg
65 to +150
1
2
CASE 2904, STYLE 5

TO92 (TO226AA)

Symbol
Min
Max
Unit
V(BR)GSS
25
Vdc
IGSS
1.0
nAdc
Drain Cutoff Current (VDS = 12 Vdc, VGS = 10 V)

Drain Cutoff Current (VDS = 12 Vdc, VGS = 10 V, TA = 100C)
ID(off)
10
2.0
nAdc
Adc
IDSS
15
mAdc
VGS(f)
1.0
Vdc
(ID = 7.0 mAdc, VGS = 0)
VDS(on)
1.5
Vdc

(ID = 0.1 mAdc, VGS = 0)
rDS(on)
150
Ohms
rds(on)
150
Ohms
Input Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
5.0
pF

(VDS = 0, VGS = 10 Vdc, f = 1.0 MHz)
Crss
1.2
pF
(VDD = 10 Vdc, ID(on)

( ) = 7.0 mAdc,
VGS(on) = 0
0, VGS(off) = 10
10 Vdc)
Vd ) (See
(S Figure
Fi
1)
td(on)
5.0
ns
tr
5.0
ns
(VDD = 10 Vdc, ID(on)

( ) = 7.0 mAdc,
VGS(on) = 0
0, VGS(off) = 10
10 Vdc)
Vd ) (See
(S Figure
Fi
1)
td(off)
15
ns
tf
10
ns
Characteristic
OFF CHARACTERISTICS
Gate Source Breakdown Voltage (IG = 10 Adc, VDS = 0)
ON CHARACTERISTICS
Zero Gate Voltage Drain Current(1)
(VDS = 15 Vdc, VGS = 0)
GateSource Forward Voltage
(IG(f) = 1.0 mAdc, VDS = 0)

SmallSignal DrainSource ON Resistance
(VGS = 0, ID = 0, f = 1.0 kHz)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
4123
2N5555
PULSE WIDTH
90%
VDD
TEKTRONIX
567
SAMPLING
SCOPE
50 OHM
COAXIAL
CABLE
1.0 k
10 k
PULSE
GENERATOR
(50 OHMS)
INPUT
50%
10%
INPUT PULSE
RISE TIME
50 OHM COAXIAL CABLE

1.0 k
VGS(on)
90%
50%
10%
VGS(off)
INPUT PULSE
FALL TIME
Rin =
50 OHMS
50
td(on)
OUTPUT
td(off)
10%
INPUT PULSE
RISE TIME < 1.0 ns
FALL TIME < 1.0 ns
NOMINAL VALUE OF ON PULSE WIDTH = 400 ns
DUTY CYCLE 1.0%
GENERATOR SOURCE IMPEDANCE = 50 OHMS
10%
90%
90%
tr
tf
Figure 1. Switching Times Test Circuit
POWER GAIN
24
f = 100 MHz
20
16
12
400 MHz
Tchannel = 25C
VDS = 15 Vdc
VGS = 0 V
8.0
4.0
0
4.0
6.0
8.0
10
2.0
12
14
NEUTRALIZING
COIL
INPUT
TO 50
SOURCE
C2
L1
C1
C4
C5
Rg
Adjust VGS for

ID = 50 mA
VGS < 0 Volts
*L2
*L3
TO 500
LOAD
L2
CASE
L3
C6
C7
VGS
*L1
C3
NOTE:
COMMON
VDS
+15 V
ID = 5.0 mA


**L1
**L2
**L3
VALUE
Reference
Designation
100 MHz
400 MHz
C1
7.0 pF
1.8 pF
C2
1000 pF
17 pF
C3
3.0 pF
1.0 pF
C4
112 pF
0.88.0 pF
C5
112 pF
0.88.0 pF
C6
0.0015 F
0.001 F
C7
0.0015 F
0.001 F
L1
3.0 H*
0.2 H**
L2
0.15 H*
0.03 H**
L3
0.14 H*
0.022 H**

(AIR CORE).
(AIR CORE).
4124
2N5555
NOISE FIGURE
(Tchannel = 25C)
10
6.5
ID = 5.0 mA
VDS = 15 V
VGS = 0 V
5.5
8.0
6.0
f = 400 MHz
4.0
2.0
4.5
f = 400 MHz
3.5
2.5
100 MHz
100 MHz
1.5
0
2.0
4.0 6.0 8.0

10
12
14
16
18
20
2.0
4.0
6.0
8.0
10
12
14
+ 40
3RD ORDER INTERCEPT
+ 20
VDS = 15 Vdc
f1 = 399 MHz
f2 = 400 MHz
0
20
40
60
80
100
FUNDAMENTAL
OUTPUT @ IDSS,
0.25 IDSS
120
140
160
120
100
3RD ORDER IMD

OUTPUT @ IDSS,
0.25 IDSS
80
60
40
20
+ 20
4125
2N5555
30
20


bis @ IDSS
10
7.0
5.0
3.0
gis @ IDSS
2.0
gis @ 0.25 IDSS
1.0
0.7
0.5
0.3
10
bis @ 0.25 IDSS

20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
5.0
3.0
2.0
brs @ IDSS
1.0
0.7
0.5
0.25 IDSS
0.3
0.2
0.1
0.07
0.05

10
20
gfs @ IDSS
gfs @ 0.25 IDSS
3.0
2.0
1.0
0.7
0.5
|bfs| @ IDSS
|bfs| @ 0.25 IDSS
500 700 1000
5.0
2.0
1.0
0.5
0.2
gos @ IDSS
0.1
0.05
gos @ 0.25 IDSS
0.02
0.01
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
4126
50 70 100
200 300
f, FREQUENCY (MHz)
10
10
7.0
5.0
0.3
0.2
10
30


20
10
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
2N5555
SPARAMETERS
30
20
10
0
1.0
40
350
100
340
330
320
40
310
50
20
10
340
330
0.4
320
0.3
400
310
300
0.8
900
500
ID = IDSS
60
800
300
400
60
500
0.7
600
0.6
300
0.1
500
70
290
400
700
800
700
800
290
0.2
700
600
600
80
350
300
200
50
70
200
100
0.9
30
ID = 0.25 IDSS
280
80
300
280
0.0
200
900
270
90
100
260
100
260
110
250
110
250
120
240
120
240
130
230
130
230
140
220
140
220
90
900
150
160
170
180
190
200
210
150
160
Figure 11. S11s

30
20
10
350
170
340
330
30
20
10
80
90
700
110
0.4
800
600
100
210
0
350
340
330
100 200
ID = 0.25 IDSS
300
1.0
400
100 200
500
300
600
400
700
0.9
500
800
600
ID = IDSS
700
900
800
900
0.8
310
50
300
60
290
70
280
80
270
90
270
260
100
260
250
110
250
240
120
240
230
130
230
220
140
220
320
310
300
0.7
290
900
700
600
200
40
0.5
60
900
190
320
0.6
50
800
180
Figure 12. S12s
40
70
270
100
500
0.3
ID = 0.25 IDSS
500
0.3
100
400
400
280
0.6
300
200
0.4
100
0.5
300
120
ID = IDSS
200
130
0.6
140
150
160
170
180
190
200
210
Figure 13. S21s

150
160
170
180
190
200
210
Figure 14. S22s

4127
2N5555
10
7.0
5.0


20
gig @ IDSS
grg @ 0.25 IDSS
3.0
2.0
1.0
0.7
0.5
big @ IDSS
big @ 0.25 IDSS
0.3
0.2
10
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
0.5
0.3
brg @ IDSS
0.2
0.1
0.07
0.05
0.25 IDSS
0.03
0.02
0.01
0.007
0.005

10
10
7.0
5.0
gfg @ IDSS
3.0
gfg @ 0.25 IDSS
2.0
1.0
0.7
0.5
bfg @ IDSS
0.3
brg @ 0.25 IDSS
0.2
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000


20
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
gog @ IDSS
0.03
0.02
gog @ 0.25 IDSS
0.1
0.01
10
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
4128
10
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
2N5555
SPARAMETERS
30
20
10
350
340
330
30
0.7
40
100
310
50
300
60
290
70
280
80
350
340
330
320
0.04
200
300
0.03
400
100
500
200
0.5
ID = IDSS
0.4
310
600
300
60
70
40
10
ID = 0.25 IDSS
0.6
50
320
20
0.02
700
400
500
300
800
600
900
0.01
290
700
80
800
0.3
900
90
270
100
260
90
250
270
500
600
100
ID = IDSS
110
280
0.0
100
110
700
600
700
260
ID = 0.25 IDSS
250
0.01
800
240
120
120
240
800
0.02
900
230
130
230
130
900
220
140
150
160
170
180
190
200
140
210
20
10
350
150
160
170
180
190
200
210
340
330
Figure 20. S12g
340
330
30
0.5
40
220
0.04
Figure 19. S11g
30
0.03
320
20
10
40
0
1.5
1.0
100
100
0.4
ID = IDSS
350
300
200
500
320
400
700
600
800
0.9
900
310
50
300
60
290
70
280
80
270
90
270
100
260
100
260
110
250
110
250
120
240
120
240
130
230
130
230
140
220
140
220
50
100
0.3
0.8
60
0.2
70
310
ID = 0.25 IDSS
80
0.1
300
0.7
290
280
0.6
900
90
900
150
160
170
180
190
200
210
Figure 21. S21g

150
160
170
180
190
200
210
Figure 22. S22g

4129
MOTOROLA
JFETs Switching
2N5640
NChannel Depletion
1 DRAIN
3
GATE
1
2
2 SOURCE
Rating
Symbol
Value
Unit
VDS
30
Vdc
DrainSource Voltage
DrainGate Voltage
VDG
30
Vdc
VGSR
30
Vdc
IGF
10
mAdc

Derate above 25C
PD
350
2.8
mW
mW/C
Reverse GateSource Voltage
RqJA
357
C/W
TJ
65 to +150
Tstg
65 to +150
CASE 2904, STYLE 5

TO92 (TO226AA)

Characteristic
Symbol
Min
Max
Unit
V(BR)GSS
30
Vdc
1.0
1.0
nAdc
Adc
1.0
1.0
nAdc
Adc
IDSS
5.0
mAdc
(ID = 3.0 mAdc, VGS = 0)
VDS(on)
0.5
Vdc

(ID = 1.0 mAdc, VGS = 0)
rDS(on)
100
Ohms
OFF CHARACTERISTICS
GateSource Breakdown Voltage (IG = 10 Adc, VDS = 0)
(VGS = 15 Vdc, VDS = 0)
(VGS = 15 Vdc, VDS = 0, TA = 100C)
IGSS

(VDS = 15 Vdc, VGS = 6.0 Vdc)
(VDS = 15 Vdc, VGS = 6.0 Vdc, TA = 100C)
ID(off)
ON CHARACTERISTICS
ZeroGateVoltage Drain Current(1)
(VDS = 20 Vdc, VGS = 0)
REV 1
4130
2N5640
Characteristic
Symbol
Min
Max
Unit
rds(on)
100
Ohms
Input Capacitance
(VDS = 0, VGS = 12 Vdc, f = 1.0 MHz)
Ciss
10
pF

(VDS = 0, VGS = 12 Vdc, f = 1.0 MHz)
Crss
4.0
pF
ID(on) = 3.0 mAdc
td(on)
8.0
ns
ID(on) = 3.0 mAdc
tr
10
ns
ID(on) = 3.0 mAdc
td(off)
15
ns
ID(on) = 3.0 mAdc
tf
30
ns
Static DrainSource ON Resistance
(VGS = 0, ID = 0, f = 1.0 kHz)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
VDD = 10 Vdc
Vdc,
VGS(on) = 0,
VGS(off) = 10 Vdc,
RG = 50
4131
2N5640
TYPICAL SWITCHING CHARACTERISTICS
1000
TJ = 25C
VGS(off) = 12 V
500
200
200
RK = RD
100
50
20
10
5.0
TJ = 25C
VGS(off) = 12 V
500
t d(on), TURNON DELAY TIME (ns)
1000
100
RK = RD
50
20
10
RK = 0
5.0
RK = 0
2.0
2.0
1.0
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
30
1.0
0.5 0.7 1.0
50
2.0 3.0
5.0 7.0 10
Figure 1. TurnOn Delay Time
30
50
30
50
Figure 2. Rise Time
1000
1000
TJ = 25C
VGS(off) = 12 V
500
500
200
TJ = 25C
VGS(off) = 12 V
RK = RD
200
100
t d(off) , TURNOFF DELAY TIME (ns)
20
RK = RD
50
20
10
RK = 0
5.0
100
50
20
RK = 0
10
5.0
2.0
2.0
1.0
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
30
1.0
0.5 0.7 1.0
50
Figure 3. TurnOff Delay Time
2.0 3.0
5.0 7.0 10
20
Figure 4. Fall Time
NOTE 1
+VDD
RD
SET VDS(off) = 10 V
INPUT
RK
RT
RGEN
50
OUTPUT
RGG
50
VGEN
INPUT PULSE
tr 0.25 ns
tf 0.5 ns
PULSE WIDTH = 2.0 s
DUTY CYCLE 2.0%
50
VGG
RGG
& RK
+ RRDD)(RTRT))50)50
RD
4132
The switching characteristics shown above were measured using a

test circuit similar to Figure 5. At the beginning of the switching
interval, the gate voltage is at Gate Supply Voltage (VGG). The
DrainSource Voltage (VDS) is slightly lower than Drain Supply
Voltage (VDD) due to the voltage divider. Thus Reverse Transfer
Capacitance (Crss) or GateDrain Capacitance (Cgd) is charged to
VGG + VDS.
During the turnon interval, GateSource Capacitance (C gs)
discharges through the series combination of RGen and RK. Cgd
must discharge to VDS(on) through RG and RK in series with the
parallel combination of effective load impedance (R D ) and
DrainSource Resistance (rds). During the turnoff, this charge flow
is reversed.
Predicting turnon time is somewhat difficult as the channel
resistance rds is a function of the gatesource voltage. While Cgs
discharges, VGS approaches zero and rds decreases. Since Cgd
discharges through rds, turnon time is nonlinear. During turnoff,
the situation is reversed with rds increasing as Cgd charges.
The above switching curves show two impedance conditions;
1) RK is equal to RD, which simulates the switching behavior of
cascaded stages where the driving source impedance is normally
the load impedance of the previous stage, and 2) RK = 0 (low
impedance) the driving source impedance is that of the generator.
20
15
10
C, CAPACITANCE (pF)
y fs, FORWARD TRANSFER ADMITTANCE (mmhos)
2N5640
10
7.0
5.0
Tchannel = 25C
VDS = 15 V
3.0
Cgs
7.0
5.0
Cgd
3.0
2.0
Tchannel = 25C
(Cds IS NEGLIGIBLE)
1.5
2.0
0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
20
30
1.0
0.03 0.05 0.1
50
Figure 6. Typical Forward Transfer Admittance
IDSS
= 10
160 mA
25
mA
50 mA
75 mA 100 mA
80
Tchannel = 25C
1.0
2.0
3.0
4.0
5.0
6.0
7.0
9.0
8.0
7.0
rDS(on) @ VGS = 0
60
50
1.6
1.4
1.2
1.0
0.8
0.6
40
10
20
50
80
110
Tchannel, CHANNEL TEMPERATURE (C)
140
170
10
Tchannel = 25C
80
70
ID = 1.0 mA
VGS = 0
Figure 9. Effect of Temperature On

DrainSource OnState Resistance
6.0
VGS(off)
5.0
40
4.0
30
3.0
20
2.0
10
1.0
rds(on), DRAINSOURCE ONSTATE

RESISTANCE (OHMS)
90
1.8
0.4
70
8.0
Figure 8. Effect of GateSource Voltage

On DrainSource Resistance
100
30
2.0
125 mA
120
40
10
Figure 7. Typical Capacitance


RESISTANCE (OHMS)
200
0.3 0.5
1.0
3.0 5.0
NOTE 2
The ZeroGateVoltage Drain Current (IDSS), is the principle
determinant of other J-FET characteristics. Figure 10 shows
the relationship of GateSource Off Voltage (VGS(off) and
DrainSource On Resistance (rds(on)) to IDSS. Most of the
devices will be within 10% of the values shown in Figure 10.
This data will be useful in predicting the characteristic
variations for a given part number.
0
0
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150
IDSS, ZEROGATEVOLTAGE DRAIN CURRENT (mA)
Figure 10. Effect of IDSS On DrainSource

Resistance and GateSource Voltage
4133
MOTOROLA
JFET Amplifiers
BFR30LT1
BFR31LT1
NChannel
2 SOURCE
3
3
GATE
1
2
1 DRAIN

SOT 23 (TO 236AB)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VDS
25
Vdc
Gate Source Voltage
VGS
25
Vdc
Symbol
Max
Unit
PD
225
mW
1.8
mW/C
RqJA
556
C/W
PD
300
mW
2.4
mW/C
RqJA
417
C/W
TJ, Tstg
55 to +150
Characteristic
TA = 25C
Derate above 25C
Derate above 25C
DEVICE MARKING
BFR30LT1 = M1; BFR31LT1 = M2

Characteristic
Symbol
Min
Max
Unit
IGSS
0.2
nAdc
OFF CHARACTERISTICS
(VGS = 10 Vdc, VDS = 0)
(ID = 0.5 nAdc, VDS = 10 Vdc)
BFR30
BFR31
VGS(OFF)
5.0
2.5
Vdc
Gate Source Voltage
(ID = 1.0 mAdc, VDS = 10 Vdc)
BFR30
BFR31
BFR30
BFR31
VGS
0.7
3.0
1.3
4.0
2.0
Vdc
(ID = 50 mAdc, VDS = 10 Vdc)
1. Device mounted on FR4 glass epoxy printed circuit board using the recommended footprint.
4134
BFR30LT1 BFR31LT1
Characteristic
Symbol
Min
Max
Unit
IDSS
4.0
1.0
10
5.0
mAdc
1.0
1.5
0.5
0.75
4.0
4.5
40
20
25
15
ON CHARACTERISTICS
(VDS = 10 Vdc, VGS = 0)
BFR30
BFR31

(ID = 1.0 mAdc, VDS = 10 Vdc, f = 1.0 kHz)
(ID = 200 mAdc, VDS = 10 Vdc, f = 1.0 kHz)
Output Admittance
(ID = 1.0 mAdc, VDS = 10 Vdc, f = 1.0 kHz)
(ID = 200 mAdc, VDS = 10 Vdc)
yfs
mAdc
BFR30
BFR31
BFR30
BFR31
yos
mAdc
BFR30
BFR31
Input Capacitance
(ID = 1.0 mAdc, VDS = 10 Vdc, f = 1.0 MHz)

(ID = 200 mAdc, VDS = 10 Vdc, f = 1.0 MHz)
Ciss
5.0
4.0
pF
(ID = 1.0 mAdc, VDS = 10 Vdc, f = 1.0 MHz)

(ID = 200 mAdc, VDS = 10 Vdc, f = 1.0 MHz)
Crss
1.5
1.5
pF
4135
BFR30LT1 BFR31LT1
14
VDS = 15 V
VGS = 0
RS = 1 M
VDS = 15 V
VGS = 0
f = 1 kHz
12
10
8
6
4
1
2
0
0.1
0.01
1.0
f, FREQUENCY (kHz)
100
10
0.001
1.2
VGS(off)
^ 1.2 V
1.2
VGS(off)
VGS = 0 V
^ 1.2 V
1.0
0.2 V
0.8
0.6
0.4 V
0.4
0.6 V
10
15
20
0.8
VDS = 15 V
0.6
0.4
0.2
0.8 V
1.0 V
0.2
4136
10

Resistance
1.0
0.01
0.1
1.0
25
0
1.2
0.8
0.4

Characteristics
BFR30LT1 BFR31LT1
4
VGS(off)
VGS(off)
^ 3.5 V
VGS = 0 V
1 V
2
2 V
^ 3.5 V
3
VDS = 15 V
2
3 V
0
10
15
20
0
5
25
^ 5.8 V
VGS = 0 V
10
VGS(off)
1 V
6
2 V
4
3 V
2

Characteristics
10
3
2
1
4
4 V
VGS(off)
^ 5.8 V
6
VDS = 15 V
4
5 V
0
0
10
15
20
25
0
7
5
4
3
2
1

Characteristics

4137
MOTOROLA
JFET Chopper Transistor

NChannel Depletion
J112
1 DRAIN
3
GATE
2 SOURCE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain Gate Voltage
VDG
35
Vdc
Gate Source Voltage
VGS
35
Vdc
Gate Current
IG
50
mAdc

Derate above 25C
PD
350
2.8
mW
mW/C
TL
300
TJ, Tstg
65 to +150
Lead Temperature
Temperature Range
1
2
CASE 2904, STYLE 5

TO92 (TO226AA)

Characteristic
Symbol
Min
Max
Unit
V(BR)GSS
35
Vdc
IGSS
1.0
nAdc
VGS(off)
1.0
5.0
Vdc
ID(off)
1.0
nAdc

(VDS = 15 Vdc)
IDSS
5.0
mAdc

(VDS = 0.1 Vdc)
rDS(on)
50
Drain Gate and Source Gate OnCapacitance

(VDS = VGS = 0, f = 1.0 MHz)
Cdg(on)
+
Csg(on)
28
pF
Drain Gate OffCapacitance

(VGS = 10 Vdc, f = 1.0 MHz)
Cdg(off)
5.0
pF
Source Gate OffCapacitance

(VGS = 10 Vdc, f = 1.0 MHz)
Csg(off)
5.0
pF
OFF CHARACTERISTICS
(IG = 1.0 Adc)
(VGS = 15 Vdc)
(VDS = 5.0 Vdc, ID = 1.0 Adc)
DrainCutoff Current
(VDS = 5.0 Vdc, VGS = 10 Vdc)
ON CHARACTERISTICS
1. Pulse Width = 300 s, Duty Cycle = 3.0%.
(Replaces J111/D)
4138
J112
1000
500
TJ = 25C
200
VGS(off) = 7.0 V
200
RK = RD
100
TJ = 25C
500
1000
50
20
10
5.0
100
50
20
10
5.0
RK = 0
2.0
RK = 0
2.0
1.0
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
30
1.0
0.5 0.7 1.0
50
2.0 3.0
5.0 7.0 10
1000
1000
TJ = 25C
500
200
100
RK = RD
50
20
10
RK = 0
20
2.0
30
50
RK = 0
10
2.0
20
VGS(off) = 7.0 V
RK = RD
50
5.0
2.0 3.0
5.0 7.0 10
50
100
5.0
1.0
0.5 0.7 1.0
30
TJ = 25C
500
VGS(off) = 7.0 V
200
20
Figure 2. Rise Time
VGS(off) = 7.0 V
RK = RD
1.0
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
30
50
Figure 4. Fall Time

NOTE 1
+VDD
RD
SET VDS(off) = 10 V
INPUT
RK
RT
RGEN
50
OUTPUT
RGG
50
VGEN
INPUT PULSE
tr 0.25 ns
tf 0.5 ns
PULSE WIDTH = 2.0 s
DUTY CYCLE 2.0%
50
VGG
RGG
& RK
+ RRDD)(RTRT))50)50
RD

VGG + VDS.
discharges through the series combination of RGen and RK. Cgd
must discharge to VDS(on) through RG and RK in series with the
parallel combination of effective load impedance (R D ) and
DrainSource Resistance (rds). During the turnoff, this charge flow
is reversed.
The above switching curves show two impedance conditions;
1) RK is equal to RD, which simulates the switching behavior of
cascaded stages where the driving source impedance is normally
the load impedance of the previous stage, and 2) RK = 0 (low
impedance) the driving source impedance is that of the generator.
4139
20
15
10
C, CAPACITANCE (pF)
y fs, FORWARD TRANSFER ADMITTANCE (mmhos)
J112
10
7.0
5.0
Tchannel = 25C
VDS = 15 V
3.0
Cgs
7.0
5.0
Cgd
3.0
2.0
Tchannel = 25C
(Cds IS NEGLIGIBLE)
1.5
2.0
0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
20
30
1.0
0.03 0.05 0.1
50
IDSS
= 10
160 mA
25
mA
50 mA
75 mA 100 mA
80
Tchannel = 25C
1.0
2.0
3.0
4.0
5.0
6.0
7.0
9.0
8.0
7.0
rDS(on) @ VGS = 0
60
50
1.6
1.4
1.2
1.0
0.8
0.6
40
10
20
50
80
110
140
170
10
Tchannel = 25C
80
70
ID = 1.0 mA
VGS = 0

6.0
VGS(off)
5.0
40
4.0
30
3.0
20
2.0
10
1.0
0
0
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150
IDSS, ZEROGATEVOLTAGE DRAIN CURRENT (mA)

RESISTANCE (OHMS)
90
1.8
0.4
70
8.0

100
30
2.0
125 mA
120
40
10


RESISTANCE (OHMS)
200
0.3 0.5
1.0
3.0 5.0
NOTE 2
determinant of other J-FET characteristics. Figure 10 shows
the relationship of GateSource Off Voltage (VGS(off) and
This data will be useful in predicting the characteristic
variations for a given part number.
For example:
Unknown
rds(on) and VGS range for an J112
The electrical characteristics table indicates that an J112
has an IDSS range of 25 to 75 mA. Figure 10, shows rds(on) =
52 Ohms for IDSS = 25 mA and 30 Ohms for IDSS = 75 mA.
The corresponding VGS values are 2.2 volts and 4.8 volts.

4140
MOTOROLA

JFETs Low Frequency/
Low Noise
J202
NChannel Depletion
1 DRAIN
3
GATE
2 SOURCE
1
2
CASE 2904, STYLE 5

TO92 (TO226AA)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VDS
40
Vdc
Drain Gate Voltage
VDG
40
Vdc
Gate Source Voltage
VGS
40
Vdc
Gate Current
IG
50
mAdc

Derate above 25C
PD
310
2.82
mW
mW/C
Tstg
65 to +150

Characteristic
Symbol
Min
Max
Unit
V(BR)GSS
40
Vdc
IGSS
100
pA
VGS(off)
0.8
4.0
Vdc
IDSS
0.9
4.5
mAdc
yfs
1000
mmhos
OFF CHARACTERISTICS
(IG = 1.0 Adc)
(VGS = 20 Vdc)
ON CHARACTERISTICS
(VDS = 20 Vdc)

Forward Transfer Admittance(1)
(VDS = 20 Vdc, f = 1.0 kHz)
1. Pulse Width
v 2.0 ms.
REV 1
4141
J202
14
VDS = 15 V
VGS = 0
RS = 1 M
VDS = 15 V
VGS = 0
f = 1 kHz
12
10
8
6
4
1
2
0
0.1
0.01
1.0
f, FREQUENCY (kHz)
100
10
0.001
1.2
VGS(off)
^ 1.2 V
1.2
VGS(off)
VGS = 0 V
^ 1.2 V
1.0
0.2 V
0.8
0.6
0.4 V
0.4
0.6 V
10
15
20
0.8
VDS = 15 V
0.6
0.4
0.2
0.8 V
1.0 V
0.2
4142
10

Resistance
1.0
0.01
0.1
1.0
25
0
1.2
0.8
0.4

Characteristics
J202
4
VGS(off)
VGS(off)
^ 3.5 V
VGS = 0 V
1 V
2
2 V
^ 3.5 V
3
VDS = 15 V
2
3 V
0
10
15
20
0
5
25
^ 5.8 V
VGS = 0 V
10
VGS(off)
1 V
6
2 V
4
3 V
2

Characteristics
10
3
2
1
4
4 V
VGS(off)
^ 5.8 V
6
VDS = 15 V
4
5 V
0
0
10
15
20
25
0
7
5
4
3
2
1

Characteristics

4143
MOTOROLA
JFET High Frequency Amplifier

NChannel Depletion
J304
1 DRAIN
3
GATE
2 SOURCE
1
2
CASE 2904, STYLE 5

TO92 (TO226AA)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain Gate Voltage
VDG
30
Vdc
GateSource Voltage
VGS
30
Vdc
Gate Current
IG
10
mA

Derate above 25C
PD
350
2.8
mW
mW/C
Lead Temperature
(1/16 from Case for 10 Seconds)
TL
300
TJ, Tstg
65 to +150

Temperature Range

Characteristic
Symbol
Min
Max
Unit
V(BR)GSS
30
Vdc
IGSS
100
pA
2.0
6.0
5.0
15
50
4500
7500
OFF CHARACTERISTICS
(IG = 1.0 Adc, VDS = 0)
(VGS = 20 Vdc, VDS = 0)
(VDS = 15 Vdc, ID = 1.0 nAdc)
VGS(off)
Vdc
ON CHARACTERISTICS
(VDS = 15 Vdc, VGS = 0)
IDSS
mA

Output Admittance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
yos
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
Re(yfs)
mmhos
mmhos
REV 1
4144
J304
POWER GAIN
24
f = 100 MHz
20
16
12
400 MHz
Tchannel = 25C
VDS = 15 Vdc
VGS = 0 V
8.0
4.0
0
4.0
6.0
8.0
10
2.0
12
14
Reference
Designation
NEUTRALIZING
COIL
INPUT
TO 50
SOURCE
C2
L1
C1
C4
C5
Rg
Adjust VGS for

ID = 50 mA
VGS < 0 Volts
*L2
*L3
TO 500
LOAD
L2
CASE
L3
C6
C7
VGS
*L1
C3
NOTE:
COMMON
VDS
+15 V
ID = 5.0 mA


**L1
**L2
**L3
VALUE
100 MHz
400 MHz
C1
7.0 pF
1.8 pF
C2
1000 pF
17 pF
C3
3.0 pF
1.0 pF
C4
112 pF
0.88.0 pF
C5
112 pF
0.88.0 pF
C6
0.0015 F
0.001 F
C7
0.0015 F
0.001 F
L1
3.0 H*
0.2 H**
L2
0.15 H*
0.03 H**
L3
0.14 H*
0.022 H**

(AIR CORE).
(AIR CORE).
4145
J304
NOISE FIGURE
(Tchannel = 25C)
10
6.5
ID = 5.0 mA
VDS = 15 V
VGS = 0 V
5.5
8.0
6.0
f = 400 MHz
4.0
2.0
4.5
f = 400 MHz
3.5
2.5
100 MHz
100 MHz
1.5
0
2.0
4.0 6.0 8.0

10
12
14
16
18
20
2.0
4.0
6.0
8.0
10
12
14
+ 40
3RD ORDER INTERCEPT
+ 20
VDS = 15 Vdc
f1 = 399 MHz
f2 = 400 MHz
0
20
40
60
80
100
FUNDAMENTAL
OUTPUT @ IDSS,
0.25 IDSS
120
140
160
120
100
3RD ORDER IMD

OUTPUT @ IDSS,
0.25 IDSS
80
60
40
20
+ 20
4146
J304
30
20
bis @ IDSS
10
7.0
5.0
3.0
gis @ IDSS
2.0
gis @ 0.25 IDSS
1.0
0.7
0.5
0.3
10
bis @ 0.25 IDSS

20
30
50 70 100
200 300
f, FREQUENCY (MHz)


500 700 1000
5.0
3.0
2.0
brs @ IDSS
1.0
0.7
0.5
0.25 IDSS
0.3
0.2
0.1
0.07
0.05

10
20
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
10
10
7.0
5.0
gfs @ IDSS
gfs @ 0.25 IDSS
3.0
2.0
1.0
0.7
0.5
0.3
0.2
10
30
|bfs| @ IDSS
|bfs| @ 0.25 IDSS


20
5.0
2.0
1.0
0.5
0.2
gos @ IDSS
0.1
0.05
gos @ 0.25 IDSS
0.02
0.01
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
10
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
4147
J304
SPARAMETERS
30
20
10
0
1.0
40
350
100
340
330
320
40
310
50
20
10
340
330
0.4
320
0.3
400
310
300
0.8
900
500
ID = IDSS
60
800
300
400
60
500
0.7
600
0.6
300
0.1
500
70
290
400
700
800
700
800
290
0.2
700
600
600
80
350
300
200
50
70
200
100
0.9
30
ID = 0.25 IDSS
280
80
300
280
0.0
200
900
270
90
100
260
100
260
110
250
110
250
120
240
120
240
130
230
130
230
140
220
140
220
90
900
150
160
170
180
190
200
210
150
160
Figure 10. S11s

30
20
10
350
170
340
330
30
20
10
80
90
700
500
0.3
ID = 0.25 IDSS
500
0
350
340
330
100 200
ID = 0.25 IDSS
300
1.0
400
100 200
500
300
600
400
700
0.9
500
800
600
ID = IDSS
700
900
800
900
0.8
310
50
300
60
290
70
280
80
270
90
270
260
100
260
250
110
250
240
120
240
230
130
230
220
140
220
320
310
300
0.7
290
0.3
280
0.6
100
400
400
110
0.4
800
600
100
210
900
700
600
200
40
0.5
60
900
190
320
0.6
50
800
180
Figure 11. S12s
40
70
270
100
300
200
0.4
100
0.5
300
120
ID = IDSS
200
130
0.6
140
150
160
170
180
190
Figure 12. S21s

4148
200
210
150
160
170
180
190
200
210
Figure 13. S22s

J304
10
7.0
5.0


20
gig @ IDSS
grg @ 0.25 IDSS
3.0
2.0
1.0
0.7
0.5
big @ IDSS
big @ 0.25 IDSS
0.3
0.2
10
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
0.5
0.3
0.1
0.07
0.05
0.25 IDSS
0.03
0.02
0.01
0.007
0.005
500 700 1000
brg @ IDSS
0.2

10
10
7.0
5.0
gfg @ IDSS
3.0
gfg @ 0.25 IDSS
2.0
1.0
0.7
0.5
bfg @ IDSS
0.3
brg @ 0.25 IDSS
0.2
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000


20
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
gog @ IDSS
0.03
0.02
gog @ 0.25 IDSS
0.1
0.01
10
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
10
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
4149
J304
SPARAMETERS
30
20
10
350
340
330
30
0.7
40
100
310
50
300
60
290
70
280
80
350
340
330
320
0.04
200
300
0.03
400
100
500
200
0.5
ID = IDSS
0.4
310
600
300
60
70
40
10
ID = 0.25 IDSS
0.6
50
320
20
0.02
700
400
500
300
800
600
900
0.01
290
700
80
800
0.3
900
90
270
100
260
90
250
270
500
600
100
ID = IDSS
110
280
0.0
100
110
700
600
700
260
ID = 0.25 IDSS
250
0.01
800
240
120
120
240
800
0.02
900
230
130
230
130
900
220
140
150
160
170
180
190
200
140
210
20
10
350
150
160
170
180
190
200
210
340
330
Figure 19. S12g
340
330
30
0.5
40
220
0.04
Figure 18. S11g
30
0.03
320
20
10
40
0
1.5
1.0
100
100
0.4
ID = IDSS
350
300
200
500
320
400
700
600
800
0.9
900
310
50
300
60
290
70
280
80
270
90
270
100
260
100
260
110
250
110
250
120
240
120
240
130
230
130
230
140
220
140
220
50
100
0.3
0.8
60
0.2
70
310
ID = 0.25 IDSS
80
0.1
300
0.7
290
280
0.6
900
90
900
150
160
170
180
190
Figure 20. S21g

4150
200
210
150
160
170
180
190
200
210
Figure 21. S22g

MOTOROLA

JFET VHF/UHF Amplifiers
NChannel Depletion
J308
J309
1 DRAIN
J310
3
GATE
2 SOURCE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VDS
25
Vdc
GateSource Voltage
VGS
25
Vdc
IGF
10
mAdc

Derate above 25C
PD
350
2.8
mW
mW/C
TJ
65 to +125
Tstg
65 to +150
1
2
CASE 2904, STYLE 5

TO92 (TO226AA)

Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)GSS
25
Vdc
1.0
1.0
nAdc
Adc
1.0
1.0
2.0
6.5
4.0
6.5
12
12
24
60
30
60
1.0
0.7
0.7
0.5
OFF CHARACTERISTICS
(IG = 1.0 Adc, VDS = 0)
(VGS = 15 Vdc, VDS = 0, TA = 25C)
(VGS = 15 Vdc, VDS = 0, TA = +125C)
IGSS
VGS(off)
J308
J309
J310
Vdc
ON CHARACTERISTICS
(VDS = 10 Vdc, VGS = 0)
IDSS
J308
J309
J310

(VDS = 0, IG = 1.0 mAdc)
VGS(f)
mAdc
Vdc

CommonSource Input Conductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)
Re(yis)
J308
J309
J310
mmhos
CommonSource Output Conductance

Re(yos)
0.25
mmhos
CommonGate Power Gain

Gpg
16
dB
4151
J308 J309 J310

Characteristic
Symbol
Min
Typ
Max
Unit
CommonSource Forward Transconductance

Re(yfs)
12
mmhos
CommonGate Input Conductance

Re(yig)
12
mmhos
8000
10000
8000
20000
20000
18000
250
13000
13000
12000
150
100
150
CommonSource Forward Transconductance

CommonSource Output Conductance

CommonGate Forward Transconductance
CommonGate Output Conductance

mhos
gfs
J308
J309
J310
gos
mhos
gfg
J308
J309
J310
mhos
gog
J308
J309
J310
mhos
GateDrain Capacitance
(VDS = 0, VGS = 10 Vdc, f = 1.0 MHz)
Cgd
1.8
2.5
pF
GateSource Capacitance
(VDS = 0, VGS = 10 Vdc, f = 1.0 MHz)
Cgs
4.3
5.0
pF
Noise Figure
NF
1.5
dB

(VDS = 10 Vdc, ID = 10 mAdc, f = 100 Hz)
en
10
nV Hz
4152
J308 J309 J310

50
SOURCE
50
LOAD
U310
C3
L2P
L1
L2S
C2
C1
C4
C6
C5
C7
1.0 k
RFC
+VDD
C1 = C2 = 0.8 10 pF, JFD #MVM010W.

C3 = C4 = 8.35 pF Erie #539002D.
C5 = C6 = 5000 pF Erie (2443000).
C7 = 1000 pF, Allen Bradley #FA5C.
RFC = 0.33 H Miller #923030.
L1 = One Turn #16 Cu, 1/4 I.D. (Air Core).
L2P = One Turn #16 Cu, 1/4 I.D. (Air Core).
L2S = One Turn #16 Cu, 1/4 I.D. (Air Core).
60
VDS = 10 V
TA = 55C
50
50
+ 25C
IDSS
+ 25C
40
40
30
30
+150C
20
20
+ 25C
55C
10
5.0
+150C 10
0
0
1.0
4.0
3.0
2.0
ID VGS, GATESOURCE VOLTAGE (VOLTS)
IDSS VGS, GATESOURCE CUTOFF VOLTAGE (VOLTS)
35
30
20
+150C
15
+ 25C
55C
10
+150C
5.0
0
5.0
4.0
Yos
VGS(off) = 2.3 V =
VGS(off) = 5.7 V =
10
10
120
RDS
CAPACITANCE (pF)
Yos, OUTPUT ADMITTANCE ( mhos)
Yfs , FORWARD TRANSCONDUCTANCE (mhos)
100
1.0 k
1.0
2.0
Figure 3. Forward Transconductance

versus GateSource Voltage
Yfs
10 k
3.0
1.0 k
Yfs
+ 25C
25
Figure 2. Drain Current and Transfer

Characteristics versus GateSource Voltage
100 k
TA = 55C
VDS = 10 V
f = 1.0 MHz
96
7.0
72
Cgs
4.0
48
24
Cgd
R DS , ON RESISTANCE (OHMS)
60
IDSS, SATURATION DRAIN CURRENT (mA)
70
70
Yfs , FORWARD TRANSCONDUCTANCE (mmhos)
Figure 1. 450 MHz CommonGate Amplifier Test Circuit
1.0
100
0.01
1.0
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
Figure 4. CommonSource Output

Admittance and Forward Transconductance
0
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
0
Figure 5. On Resistance and Junction

Capacitance versus GateSource Voltage
4153
J308 J309 J310

|S21|, |S11|
0.85 0.45
2.4
0.79 0.39
|S12|, |S22|
0.060 1.00
S22
VDS = 10 V
ID = 10 mA
TA = 25C
24
3.0
0.048 0.98
S21
Y11
18
1.8
Y21
12
1.2
0.73 0.33
VDS = 10 V
ID = 10 mA
TA = 25C
0.67 0.27
0.024 0.94
0.61 0.21
0.6
0.012 0.92
S12
Y12
0
100
200
300
500
f, FREQUENCY (MHz)
700
0.55 0.15
100
1000
Figure 6. CommonGate Y Parameter

Magnitude versus Frequency
22
160
40
200
300
500
f, FREQUENCY (MHz)
11, 12
20 120
40
0.90
86
40 100
85
60
80
120 84
80
60
100
40
120
20
100
21, 22
0
11
20
21
700 1000
Figure 7. CommonGate S Parameter

12, 22
20 87
21, 11
180 50
170
0.036 0.96
S11
Y22
6.0
Y12 (mmhos)
|Y11|, |Y21 |, |Y22 | (mmhos)
30
21
22
20
60
80
30
40
100
20
140
10
12
11
130
0
100
140
VDS = 10 V
ID = 10 mA
TA = 25C
200
300
500
f, FREQUENCY (MHz)
180
200 82
1000

PhaseAngle versus Frequency
8.0
24
7.0
21
6.0
18
5.0
15
Gpg
4.0
12
NF
3.0
9.0
2.0
6.0
1.0
3.0
0
4.0
6.0
8.0
10 12
14 16
18
20
Figure 10. Noise Figure and

Power Gain versus Drain Current
4154
11
200
300
500
f, FREQUENCY (MHz)
700
80
100
1000
26
VDD = 20 V
f = 450 MHz
BW 10 MHz
CIRCUIT IN FIGURE 1
22
0
24
6.0
VDS = 10 V
ID = 10 mA
TA = 25C
Figure 9. S Parameter PhaseAngle

versus Frequency
G pg , POWER GAIN (dB)
7.0
60
12
160 83
700
21
22
5.0
4.0
3.0
2.0
18
Gpg
VDS = 10 V
ID = 10 mA
TA = 25C
CIRCUIT IN FIGURE 1
14
10
NF
150
6.0
1.0
2.0
0
50
100
200 300
f, FREQUENCY (MHz)
500 700 1000
Figure 11. Noise Figure and Power Gain

versus Frequency
J308 J309 J310

C1
C6
U310
S
D
G
C3
L1
INPUT
RS = 50
C4
L3
OUTPUT
RL = 50
C5
C2
L2
L4
VS
C1 = 110 pF Johanson Air variable trimmer.

C2, C5 = 100 pF feed thru button capacitor.
C3, C4, C6 = 0.56 pF Johanson Air variable
trimmer.
L1 = 1/8 x 1/32 x 15/8 copper bar.
L2, L4 = Ferroxcube Vk200 choke.
L3 = 1/8 x 1/32 x 17/8 copper bar.
VD
SHIELD
BW (3 dB) 36.5 MHz

ID 10 mAdc
VDS 20 Vdc
Device case grounded
IM test tones f1 = 449.5 MHz, f2 = 450.5 MHz
Figure 12. 450 MHz IMD Evaluation Amplifier

Amplifier power gain and IMD products are a function of the load impedance. For the amplifier design shown above with C4 and
C6 adjusted to reflect a load to the drain resulting in a nominal power gain of 9 dB, the 3rd order intercept point (IP) value is
29 dBm. Adjusting C4, C6 to provide larger load values will result in higher gain, smaller bandwidth and lower IP values. For
example, a nominal gain of 13 dB can be achieved with an intercept point of 19 dBm.
OUTPUT POWER PER TONE (dBm)
+40
+20
0
20
40
U310 JFET
VDS = 20 Vdc
ID = 10 mAdc
F1 = 449.5 MHz
F2 = 450.5 MHz
3RD ORDER INTERCEPT POINT
FUNDAMENTAL OUTPUT
Example of intercept point plot use:
Assume two inband signals of 20 dBm at the amplifier input.
They will result in a 3rd order IMD signal at the output of
90 dBm. Also, each signal level at the output will be
11 dBm, showing an amplifier gain of 9.0 dB and an
intermodulation ratio (IMR) capability of 79 dB. The gain and
IMR values apply only for signal levels below comparison.
60
80
3RD ORDER IMD OUTPUT
100
120
120
100
60
40
20
80
INPUT POWER PER TONE (dBm)
+20
Figure 13. Two Tone 3rd Order Intercept Point
4155
MOTOROLA
MMBF4391LT1
MMBF4392LT1
MMBF4393LT1
JFET Switching Transistors

NChannel
2 SOURCE
3
GATE
1 DRAIN
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DrainSource Voltage
VDS
30
Vdc
DrainGate Voltage
VDG
30
Vdc
GateSource Voltage
VGS
30
Vdc
IG(f)
50
mAdc
Symbol
Max
Unit

TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
RqJA
556
C/W
TJ, Tstg
55 to +150

SOT 23 (TO 236AB)
Characteristic
DEVICE MARKING
MMBF4391LT1 = 6J; MMBF4392LT1 = 6K; MMBF4393LT1 = 6G

Characteristic
Symbol
Min
Max
Unit
V(BR)GSS
30
Vdc
1.0
0.20
nAdc
Adc
4.0
2.0
0.5
10
5.0
3.0
1.0
1.0
OFF CHARACTERISTICS
GateSource Breakdown Voltage
(IG = 1.0 Adc, VDS = 0)
(VGS = 15 Vdc, VDS = 0, TA = 25C)
(VGS = 15 Vdc, VDS = 0, TA = 100C)
GateSource Cutoff Voltage
OffState Drain Current

(VDS = 15 Vdc, VGS = 12 Vdc, TA = 100C)
1. FR 5 = 1.0
4156
0.75 0.062 in.
IGSS
VGS(off)
MMBF4391LT1
MMBF4392LT1
MMBF4393LT1
Vdc
ID(off)
nAdc
Adc
MMBF4391LT1 MMBF4392LT1 MMBF4393LT1

Characteristic
Symbol
Min
Max
50
25
5.0
150
75
30
0.4
0.4
0.4
30
60
100
Unit
ON CHARACTERISTICS
(VDS = 15 Vdc, VGS = 0)
IDSS
MMBF4391LT1
MMBF4392LT1
MMBF4393LT1
(ID = 12 mAdc, VGS = 0)
(ID = 6.0 mAdc, VGS = 0)
(ID = 3.0 mAdc, VGS = 0)
mAdc
VDS(on)
MMBF4391LT1
MMBF4392LT1
MMBF4393LT1

(ID = 1.0 mAdc, VGS = 0)
Vdc
rDS(on)
MMBF4391LT1
MMBF4392LT1
MMBF4393LT1

Input Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
14
pF

(VDS = 0, VGS = 12 Vdc, f = 1.0 MHz)
Crss
3.5
pF
1000
TJ = 25C
500
MMBF4391 VGS(off) = 12 V
MMBF4392
= 7.0 V
MMBF4393
= 5.0 V
RK = RD
200
500
100
50
20
10
RK = 0
5.0
2.0
1.0
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10

20
30
RK = RD
200
t d(on) , TURNON DELAY TIME (ns)
1000
100
50
20
10
5.0
2.0
1.0
0.5 0.7 1.0
50
RK = 0
2.0 3.0 5.0 7.0 10

1000
500
TJ = 25C
= 7.0 V
MMBF4392
= 5.0 V
MMBF4393
200
100
RK = RD
50
20
10
5.0
RK = 0
2.0
1.0
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10

20
30
50
Figure 2. Rise Time
1000
500
TJ = 25C
MMBF4392
= 7.0 V
MMBF4393
= 5.0 V
20
30
50
RK = RD
200
100
TJ = 25C
MMBF4392
= 7.0 V
MMBF4393
= 5.0 V
50
20
RK = 0
10
5.0
2.0
1.0
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10

20
30
50
Figure 4. Fall Time
4157

NOTE 1
VDD
RD
SET VDS(off) = 10 V
INPUT
RK
RT
OUTPUT
RGEN
50
RGG
50
INPUT PULSE
tr 0.25 ns
tf 0.5 ns
PULSE WIDTH = 2.0 s
DUTY CYCLE 2.0%
50
VGG
VGEN
RGG > RK
RD = RD(RT + 50)
RD + RT + 50
15
20
MMBF4392
10
MMBF4391
C, CAPACITANCE (pF)
V fs , FORWARD TRANSFER ADMITTANCE (mmhos)
The switching characteristics shown above were measured using a test

circuit similar to Figure 5. At the beginning of the switching interval, the
gate voltage is at Gate Supply Voltage (VGG). The DrainSource Voltage
(VDS) is slightly lower than Drain Supply Voltage (VDD) due to the voltage
divider. Thus Reverse Transfer Capacitance (Crss) of GateDrain Capacitance (Cgd) is charged to VGG + VDS.
During the turnon interval, GateSource Capacitance (Cgs) discharges
through the series combination of RGen and RK. Cgd must discharge to
VDS(on) through RG and RK in series with the parallel combination of effective load impedance (RD) and DrainSource Resistance (rDS). During the
turnoff, this charge flow is reversed.
Predicting turnon time is somewhat difficult as the channel resistance
rDS is a function of the gatesource voltage. While Cgs discharges, VGS
approaches zero and rDS decreases. Since Cgd discharges through rDS,
turnon time is nonlinear. During turnoff, the situation is reversed with
rDS increasing as Cgd charges.
The above switching curves show two impedance conditions; 1) RK is
equal to RD which simulates the switching behavior of cascaded stages
where the driving source impedance is normally the load impedance of the
previous stage, and 2) RK = 0 (low impedance) the driving source impedance is that of the generator.
10
MMBF4393
7.0
Tchannel = 25C
VDS = 15 V
5.0
3.0
2.0
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
30
50
Cgs
7.0
Cgd
5.0
3.0
2.0
1.5
Tchannel = 25C
(Cds is negligible
1.0
0.03 0.05 0.1
200
IDSS 25 mA
= 10
160 mA
50 mA
75 mA 100 mA
125 mA
120
80
40
Tchannel = 25C
1.0
2.0
3.0
5.0
4.0
6.0
7.0

on DrainSource Resistance
4158
30
r DS(on), DRAINSOURCE ONSTATE

r DS(on), DRAINSOURCE ONSTATE

RESISTANCE (OHMS)
0.3 0.5 1.0

3.0 5.0 10
8.0
2.0
1.8
ID = 1.0 mA
VGS = 0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
70
40
10
20
50
80
110
140
170

Figure 9. Effect of Temperature on DrainSource
OnState Resistance
100
90
80
70
60
50
40
30
20
10
0
10
Tchannel = 25C
9.0
8.0
7.0
rDS(on) @ VGS = 0
6.0
VGS(off)
5.0
4.0
3.0
2.0
1.0
0
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150
IDSS, ZEROGATE VOLTAGE DRAIN CURRENT (mA)
V GS , GATESOURCE VOLTAGE
(VOLTS)
r DS(on) , DRAINSOURCE ONSTATE

RESISTANCE (OHMS)
NOTE 2
The ZeroGateVoltage Drain Current (IDSS) is the principle determinant of other JFET characteristics. Figure 10 shows the relationship
of GateSource Off Voltage (VGS(off)) and DrainSource On Resistance (rDS(on)) to IDSS. Most of the devices will be within 10% of the
values shown in Figure 10. This data will be useful in predicting the
characteristic variations for a given part number.
For example:
Unknown
rDS(on) and VGS range for an MMBF4392
The electrical characteristics table indicates that an MMBF4392
has an IDSS range of 25 to 75 mA. Figure 10 shows rDS(on) = 52
Ohms for IDSS = 25 mA and 30 Ohms for IDSS = 75 mA. The corresponding VGS values are 2.2 volts and 4.8 volts.
Figure 10. Effect of IDSS on DrainSource

4159
MOTOROLA
JFET
MMBF4416LT1
VHF/UHF Amplifier Transistor
NChannel
2 SOURCE
3
GATE
3
1 DRAIN
1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DrainSource Voltage
VDS
30
Vdc
DrainGate Voltage
VDG
30
Vdc
GateSource Voltage
VGS
30
Vdc
IG
10
mAdc
Symbol
Max
Unit

TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
RqJA
556
C/W
TJ, Tstg
55 to +150
Gate Current

SOT 23 (TO 236AB)
Characteristic
DEVICE MARKING
MMBF4416LT1 = M6A

Characteristic
Symbol
Min
Max
Unit
V(BR)GSS
30
Vdc
1.0
200
OFF CHARACTERISTICS
(IG = 1.0 Adc, VDS = 0)
(VGS = 20 Vdc, VDS = 0)
(VGS = 20 Vdc, VDS = 0, TA = 150C)
IGSS
nAdc

(ID = 1.0 nAdc, VDS = 15 Vdc)
VGS(off)
6.0
Vdc
Gate Source Voltage

(ID = 0.5 mAdc, VDS = 15 Vdc)
VGS
1.0
5.5
Vdc
IDSS
5.0
15
mAdc
VGS(f)
1.0
Vdc
ON CHARACTERISTICS
(VGS = 15 Vdc, VGS = 0)
(IG = 1.0 mAdc, VDS = 0)
1. FR 5 = 1.0
0.75 0.062 in.
4160
MMBF4416LT1
Characteristic
Symbol
Min
Max
Unit

(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
|Yfs|
4500
7500
mhos
Output Admittance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
|yos|
50
mhos
Input Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
4.0
pF

(VDS = 15 Vdc, VGS = 0, f = 10 MHz)
Crss
0.8
pF
Output Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Coss
2.0
pF
2.0
4.0
18
10
Noise Figure
(VDS = 15 Vdc, ID = 5.0 mAdc, Rg 1000 , f = 100 MHz)
(VDS = 15 Vdc, ID = 5.0 mAdc, Rg 1000 , f = 400 MHz)
NF

Gps
dB
dB
POWER GAIN
24
f = 100 MHz
20
16
12
400 MHz
Tchannel = 25C
VDS = 15 Vdc
VGS = 0 V
8.0
4.0
0
2.0
4.0
6.0
8.0
10
12
14
4161
MMBF4416LT1
NEUTRALIZING
COIL
INPUT
TO 50
SOURCE
C2
L1
C4
C5
Rg
*L2
*L3
7.0 pF
1.8 pF
C2
1000 pF
17 pF
TO 500
LOAD
L2
C6
C7
COMMON
VDS
+15 V
VGS
*L1
400 MHz
C1
CASE
L3
NOTE:
Adjust VGS for

ID = 50 mA
VGS < 0 Volts
100 MHz
C3
C1
ID = 5.0 mA

**L1

**L2
**L3
VALUE
Reference
Designation
C3
3.0 pF
1.0 pF
C4
112 pF
0.88.0 pF
C5
112 pF
0.88.0 pF
C6
0.0015 F
0.001 F
C7
0.0015 F
0.001 F
L1
3.0 H*
0.2 H**
L2
0.15 H*
0.03 H**
L3
0.14 H*
0.022 H**

(AIR CORE).
(AIR CORE).
NOISE FIGURE
(Tchannel = 25C)
6.5
10
ID = 5.0 mA
VDS = 15 V
VGS = 0 V
5.5
8.0
6.0
f = 400 MHz
4.0
2.0
4.5
f = 400 MHz
3.5
2.5
100 MHz
100 MHz
1.5
0
0
2.0
16
4.0 6.0 8.0
10
12
14
18
20
2.0
4.0
6.0
8.0
10
12
14
+ 40
3RD ORDER INTERCEPT
+ 20
VDS = 15 Vdc
f1 = 399 MHz
f2 = 400 MHz
0
20
40
60
80
100
FUNDAMENTAL
OUTPUT @ IDSS,
0.25 IDSS
120
140
160
120
100
3RD ORDER IMD

OUTPUT @ IDSS,
0.25 IDSS
80
60
40
20
+ 20
4162
MMBF4416LT1
30
20
bis @ IDSS
10
7.0
5.0
3.0
gis @ IDSS
2.0
gis @ 0.25 IDSS
1.0
0.7
0.5
0.3
10
bis @ 0.25 IDSS

20
30
50 70 100
200 300
f, FREQUENCY (MHz)


500 700 1000
5.0
3.0
2.0
brs @ IDSS
1.0
0.7
0.5
0.25 IDSS
0.3
0.2
0.1
0.07
0.05

10
20
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
10
10
7.0
5.0
gfs @ IDSS
gfs @ 0.25 IDSS
3.0
2.0
1.0
0.7
0.5
0.3
0.2
10
30
|bfs| @ IDSS
|bfs| @ 0.25 IDSS


20
5.0
2.0
1.0
0.5
0.2
gos @ IDSS
0.1
0.05
gos @ 0.25 IDSS
0.02
0.01
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
10
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
4163
MMBF4416LT1
SPARAMETERS
30
20
10
0
1.0
40
350
100
340
330
320
40
310
50
20
10
340
330
0.4
320
0.3
400
310
300
0.8
900
500
ID = IDSS
60
800
300
400
60
500
0.7
600
0.6
300
0.1
500
70
290
400
700
800
700
800
290
0.2
700
600
600
80
350
300
200
50
70
200
100
0.9
30
ID = 0.25 IDSS
280
80
300
280
0.0
200
900
270
90
100
260
100
260
110
250
110
250
120
240
120
240
130
230
130
230
140
220
140
220
90
900
150
160
170
180
190
200
210
150
160
Figure 10. S11s

30
20
10
350
170
340
330
30
20
10
80
90
700
500
0.3
ID = 0.25 IDSS
500
0
350
340
330
100 200
ID = 0.25 IDSS
300
1.0
400
100 200
500
300
600
400
700
0.9
500
800
600
ID = IDSS
700
900
800
900
0.8
310
50
300
60
290
70
280
80
270
90
270
260
100
260
250
110
250
240
120
240
230
130
230
220
140
220
320
310
300
0.7
290
0.3
280
0.6
100
400
400
110
0.4
800
600
100
210
900
700
600
200
40
0.5
60
900
190
320
0.6
50
800
180
Figure 11. S12s
40
70
270
100
300
200
0.4
100
0.5
300
120
ID = IDSS
200
130
0.6
140
150
160
170
180
190
Figure 12. S21s

4164
200
210
150
160
170
180
190
200
210
Figure 13. S22s

MMBF4416LT1
10
7.0
5.0


20
gig @ IDSS
grg @ 0.25 IDSS
3.0
2.0
1.0
0.7
0.5
big @ IDSS
big @ 0.25 IDSS
0.3
0.2
10
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
0.5
0.3
0.1
0.07
0.05
0.25 IDSS
0.03
0.02
0.01
0.007
0.005
500 700 1000
brg @ IDSS
0.2

10
10
7.0
5.0
gfg @ IDSS
3.0
gfg @ 0.25 IDSS
2.0
1.0
0.7
0.5
bfg @ IDSS
0.3
brg @ 0.25 IDSS
0.2
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000


20
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
gog @ IDSS
0.03
0.02
gog @ 0.25 IDSS
0.1
0.01
10
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
10
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
4165
MMBF4416LT1
SPARAMETERS
30
20
10
350
340
330
30
0.7
40
100
310
50
300
60
290
70
280
80
350
340
330
320
0.04
200
300
0.03
400
100
500
200
0.5
ID = IDSS
0.4
310
600
300
60
70
40
10
ID = 0.25 IDSS
0.6
50
320
20
0.02
700
400
500
300
800
600
900
0.01
290
700
80
800
0.3
900
90
270
100
260
90
250
270
500
600
100
ID = IDSS
110
280
0.0
100
110
700
600
700
260
ID = 0.25 IDSS
250
0.01
800
240
120
120
240
800
0.02
900
230
130
230
130
900
220
140
150
160
170
180
190
200
140
210
20
10
350
150
160
170
180
190
200
210
340
330
Figure 19. S12g
340
330
30
0.5
40
220
0.04
Figure 18. S11g
30
0.03
320
20
10
40
0
1.5
1.0
100
100
0.4
ID = IDSS
350
300
200
500
320
400
700
600
800
0.9
900
310
50
300
60
290
70
280
80
270
90
270
100
260
100
260
110
250
110
250
120
240
120
240
130
230
130
230
140
220
140
220
50
100
0.3
0.8
60
0.2
70
310
ID = 0.25 IDSS
80
0.1
300
0.7
290
280
0.6
900
90
900
150
160
170
180
190
Figure 20. S21g

4166
200
210
150
160
170
180
190
200
210
Figure 21. S22g

MOTOROLA
JFET General Purpose

Transistor
MMBF5457LT1
NChannel
2 SOURCE
3
GATE
3
1 DRAIN
1
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DrainSource Voltage
VDS
25
Vdc
DrainGate Voltage
VDG
25
Vdc
VGS(r)
25
Vdc
IG
10
mAdc
Symbol
Max
Unit

TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
RqJA
556
C/W
TJ, Tstg
55 to +150

Gate Current

SOT 23 (TO 236AB)
Characteristic
DEVICE MARKING
MMBF5457LT1 = 6D

Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)GSS
25
Vdc
1.0
200
OFF CHARACTERISTICS
(IG = 10 Adc, VDS = 0)
(VGS = 15 Vdc, VDS = 0)
(VGS = 15 Vdc, VDS = 0, TA = 100C)
IGSS
nAdc

VGS(off)
0.5
6.0
Vdc
Gate Source Voltage

(VDS = 15 Vdc, ID = 100 Adc)
VGS
2.5
Vdc
IDSS
1.0
5.0
mAdc
ON CHARACTERISTICS
(VDS = 15 Vdc, VGS = 0)
1. FR 5 = 1.0
0.75 0.062 in.
2. Pulse Test: Pulse Width 630 ms, Duty Cycle 10%.
4167
MMBF5457LT1
Characteristic
Symbol
Min
Typ
Max
Unit

(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
|Yfs|
1000
5000
mhos
Reverse Transfer Admittance

(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
|yrs|
10
50
mhos
Input Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
4.5
7.0
pF

(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Crss
1.5
3.0
pF
2. Pulse Test: Pulse Width 630 ms, Duty Cycle 10%.
14
VDS = 15 V
VGS = 0
RS = 1 M
VDS = 15 V
VGS = 0
f = 1 kHz
12
10
8
6
4
1
2
0
0.1
0.01
1.0
f, FREQUENCY (kHz)
100
10
0.001
1.2
VGS(off)
^ 1.2 V
1.2
VGS(off)
VGS = 0 V
^ 1.2 V
1.0
0.2 V
0.8
0.6
0.4 V
0.4
0.6 V
10
15
20
0.8
VDS = 15 V
0.6
0.4
0.2
0.8 V
1.0 V
0.2
4168
10

Resistance
1.0
0.01
0.1
1.0
25
0
1.2
0.8
0.4

Characteristics
MMBF5457LT1
4
VGS(off)
VGS(off)
^ 3.5 V
VGS = 0 V
1 V
2
2 V
^ 3.5 V
3
VDS = 15 V
2
3 V
0
10
15
20
0
5
25
^ 5.8 V
VGS = 0 V
10
VGS(off)
1 V
6
2 V
4
3 V
2

Characteristics
10
3
2
1
4
4 V
VGS(off)
^ 5.8 V
6
VDS = 15 V
4
5 V
0
0
10
15
20
25
0
7
5
4
3
2
1

Characteristics

4169
MOTOROLA
JFET General Purpose Transistor

PChannel
MMBF5460LT1
2 SOURCE
3
GATE
1 DRAIN
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VDG
40
Vdc
VGSR
40
Vdc
IGF
10
mAdc
Symbol
Max
Unit

TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
RqJA
556
C/W
TJ, Tstg
55 to +150
DrainGate Voltage
1
2

SOT 23 (TO 236AB)
Characteristic
DEVICE MARKING
MMBF5460LT1 = 6E

Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)GSS
40
Vdc
5.0
1.0
nAdc
Adc
VGS(off)
0.75
6.0
Vdc
VGS
0.5
4.0
Vdc
IDSS
1.0
5.0
mAdc
Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
|Yfs|
1000
4000
mhos
Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
|yos|
75
mhos
Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
5.0
7.0
pF
Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Crss
1.0
2.0
pF
en
20
nV Hz
OFF CHARACTERISTICS
GateSource Breakdown Voltage (IG = 10 Adc, VDS = 0)
(VGS = 20 Vdc, VDS = 0)
(VGS = 20 Vdc, VDS = 0, TA = 100C)
IGSS
Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 1.0 Adc)

Gate Source Voltage (VDS = 15 Vdc, ID = 0.1 mAdc)
ON CHARACTERISTICS

(VDS = 15 Vdc, VGS = 0, RG = 1.0 M,
f = 100 Hz, BW = 1.0 Hz)
1. FR 5 = 1.0
4170
0.75 0.062 in.
MMBF5460LT1
FORWARD TRANSFER ADMITTANCE
versus DRAIN CURRENT
4.0
VDS = 15 V
3.5
3.0
2.5
TA = 55C
2.0
25C
1.5
125C
1.0
0.5
0
0
0.2
0.4 0.6 0.8

1.0
1.2 1.4
1.6
1.8
2.0
DRAIN CURRENT versus GATE

SOURCE VOLTAGE
4000
3000
2000
1000
700
500
VDS = 15 V
f = 1.0 kHz
300
200
0.2
0.3
10
VDS = 15 V
8.0
TA = 55C
7.0
6.0
25C
125C
5.0
4.0
3.0
2.0
1.0
4.0
0.5
1.5
2.0
2.5
3.0
1.0
3.5
4.0
7000
5000
3000
2000
1000
VDS = 15 V
f = 1.0 kHz
700
500
0.5
0.7
1.0
2.0
3.0
5.0
7.0
16
10000
VDS = 15 V
14
3.0
10000
9.0
2.0

0.5
0.7
1.0
12
TA = 55C
10
8.0
25C
125C
6.0
4.0
2.0
0
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
7000
5000
3000
2000
1000
VDS = 15 V
f = 1.0 kHz
700
500
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
4171
MMBF5460LT1
10
VDS = 15 V
f = 1.0 kHz
8.0
300
200
IDSS = 3.0 mA
100
70
50
6.0 mA
10 mA
30
7.0
6.0
Ciss
5.0
4.0
3.0
2.0
20
10
0.1
f = 1.0 MHz
VGS = 0
9.0
C, CAPACITANCE (pF)
r oss , OUTPUT RESISTANCE (k ohms)
1000
700
500
Coss
1.0
Crss
0
0.5
1.0
2.0
0.2
5.0
10
Figure 7. Output Resistance

40

DrainSource Voltage
5.0
10
VDS = 15 V
VGS = 0
RG = 1.0 Megohm
4.0
3.0
2.0
9.0
10
20
30
1.0
VDS = 15 V
VGS = 0
f = 100 Hz
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
10
20 30 50
100 200 300 500 1000 2000 3000

f, FREQUENCY (Hz)
0
1.0
10,000
10
100
1000
RS, SOURCE RESISTANCE (k Ohms)
Figure 10. Noise Figure versus

Source Resistance
COMMON SOURCE
y PARAMETERS FOR FREQUENCIES
BELOW 30 MHz
vi
Crss
Ciss
10,000
ross
Coss
| yfs | vi
yis = j Ciss
yos = j Cosp * + 1/ross
yfs = yfs |
yrs = j Crss
* Cosp is Coss in parallel with Series Combination of Ciss and Crss.
NOTE:
1. Graphical data is presented for dc conditions. Tabular
data is given for pulsed conditions (Pulse Width = 630 ms,
Duty Cycle = 10%).
Figure 11. Equivalent Low Frequency Circuit
4172
MOTOROLA
JFET Transistor
NChannel
2 SOURCE
MMBF5484LT1
3
GATE
1 DRAIN
MAXIMUM RATINGS
Rating
DrainGate Voltage
Symbol
Value
Unit
VDG
25
Vdc
VGS(r)
25
Vdc
IG(f)
10
mAdc
200
2.8
mW
mW/C
Continuous Device Dissipation at or Below

TC = 25C
Linear Derating Factor
PD
Tstg
65 to +150

SOT 23 (TO 236AB)
Characteristic
Symbol
Max
Unit

TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
RqJA
556
C/W
TJ, Tstg
55 to +150
DEVICE MARKING
MMBF5484LT1 = 6B

Characteristic
Symbol
Min
Max
Unit
V(BR)GSS
25
Vdc
1.0
0.2
nAdc
Adc
VGS(off)
0.3
3.0
Vdc
IDSS
1.0
5.0
mAdc

(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
|Yfs|
3000
6000
mhos
Output Admittance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
|yos|
50
mhos
OFF CHARACTERISTICS
(IG = 1.0 Adc, VDS = 0)
(VGS = 20 Vdc, VDS = 0)
(VGS = 20 Vdc, VDS = 0, TA = 100C)
IGSS
ON CHARACTERISTICS
(VDS = 15 Vdc, VGS = 0)
1. FR 5 = 1.0
0.75 0.062 in.
4173
MMBF5484LT1
Characteristic
Symbol
Min
Max
Unit
Input Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
5.0
pF

(VDS = 15 Vdc, VGS = 0, f = 10 MHz)
Crss
1.0
pF
Output Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Coss
2.0
pF
SMALL SIGNAL CHARACTERISTICS (Continued)
Noise Figure
(VDS = 15 Vdc, ID = 1.0 mAdc, YG = 1.0 mmhos)
(RG = 1.0 k, f = 100 MHz)
(VDS = 15 Vdc, VGS = 0, YG = 1.0 mhos)
(RG = 1.0 M, f = 1.0 kHz)
NF

Gps
dB
3.0
2.5
16
25
dB
POWER GAIN
24
f = 100 MHz
20
16
12
400 MHz
Tchannel = 25C
VDS = 15 Vdc
VGS = 0 V
8.0
4.0
0
2.0
4.0
6.0
8.0
10
12
14
4174
MMBF5484LT1
NEUTRALIZING
COIL
INPUT
TO 50
SOURCE
C2
L1
C4
C5
Rg
*L2
*L3
7.0 pF
1.8 pF
C2
1000 pF
17 pF
TO 500
LOAD
L2
C6
C7
COMMON
VDS
+15 V
VGS
*L1
400 MHz
C1
CASE
L3
NOTE:
Adjust VGS for

ID = 50 mA
VGS < 0 Volts
100 MHz
C3
C1
ID = 5.0 mA

**L1

**L2
**L3
VALUE
Reference
Designation
C3
3.0 pF
1.0 pF
C4
112 pF
0.88.0 pF
C5
112 pF
0.88.0 pF
C6
0.0015 F
0.001 F
C7
0.0015 F
0.001 F
L1
3.0 H*
0.2 H**
L2
0.15 H*
0.03 H**
L3
0.14 H*
0.022 H**

(AIR CORE).
(AIR CORE).
NOISE FIGURE
(Tchannel = 25C)
6.5
10
ID = 5.0 mA
VDS = 15 V
VGS = 0 V
5.5
8.0
6.0
f = 400 MHz
4.0
2.0
4.5
f = 400 MHz
3.5
2.5
100 MHz
100 MHz
1.5
0
0
2.0
16
4.0 6.0 8.0
10
12
14
18
20
2.0
4.0
6.0
8.0
10
12
14
+ 40
3RD ORDER INTERCEPT
+ 20
VDS = 15 Vdc
f1 = 399 MHz
f2 = 400 MHz
0
20
40
60
80
100
FUNDAMENTAL
OUTPUT @ IDSS,
0.25 IDSS
120
140
160
120
100
3RD ORDER IMD

OUTPUT @ IDSS,
0.25 IDSS
80
60
40
20
+ 20
4175
MMBF5484LT1
30
20


bis @ IDSS
10
7.0
5.0
3.0
gis @ IDSS
2.0
gis @ 0.25 IDSS
1.0
0.7
0.5
0.3
10
bis @ 0.25 IDSS

20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
5.0
3.0
2.0
brs @ IDSS
1.0
0.7
0.5
0.25 IDSS
0.3
0.2
0.1
0.07
0.05

10
20
gfs @ IDSS
gfs @ 0.25 IDSS
3.0
2.0
1.0
0.7
0.5
|bfs| @ IDSS
|bfs| @ 0.25 IDSS
500 700 1000
5.0
2.0
1.0
0.5
0.2
gos @ IDSS
0.1
0.05
gos @ 0.25 IDSS
0.02
0.01
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
4176
50 70 100
200 300
f, FREQUENCY (MHz)
10
10
7.0
5.0
0.3
0.2
10
30


20
10
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
MMBF5484LT1
SPARAMETERS
30
20
10
0
1.0
40
350
100
340
330
320
40
310
50
20
10
340
330
0.4
320
0.3
400
310
300
0.8
900
500
ID = IDSS
60
800
300
400
60
500
0.7
600
0.6
300
0.1
500
70
290
400
700
800
700
800
290
0.2
700
600
600
80
350
300
200
50
70
200
100
0.9
30
ID = 0.25 IDSS
280
80
300
280
0.0
200
900
270
90
100
260
100
260
110
250
110
250
120
240
120
240
130
230
130
230
140
220
140
220
90
900
150
160
170
180
190
200
210
150
160
Figure 10. S11s

30
20
10
350
170
340
330
30
20
10
80
90
700
110
0.4
800
600
100
210
0
350
340
330
100 200
ID = 0.25 IDSS
300
1.0
400
100 200
500
300
600
400
700
0.9
500
800
600
ID = IDSS
700
900
800
900
0.8
310
50
300
60
290
70
280
80
270
90
270
260
100
260
250
110
250
240
120
240
230
130
230
220
140
220
320
310
300
0.7
290
900
700
600
200
40
0.5
60
900
190
320
0.6
50
800
180
Figure 11. S12s
40
70
270
100
500
0.3
ID = 0.25 IDSS
500
0.3
100
400
400
280
0.6
300
200
0.4
100
0.5
300
120
ID = IDSS
200
130
0.6
140
150
160
170
180
190
200
210
Figure 12. S21s

150
160
170
180
190
200
210
Figure 13. S22s

4177
MMBF5484LT1
10
7.0
5.0


20
gig @ IDSS
grg @ 0.25 IDSS
3.0
2.0
1.0
0.7
0.5
big @ IDSS
big @ 0.25 IDSS
0.3
0.2
10
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
0.5
0.3
brg @ IDSS
0.2
0.1
0.07
0.05
0.25 IDSS
0.03
0.02
0.01
0.007
0.005

10
10
7.0
5.0
gfg @ IDSS
3.0
gfg @ 0.25 IDSS
2.0
1.0
0.7
0.5
bfg @ IDSS
0.3
brg @ 0.25 IDSS
0.2
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000


20
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
gog @ IDSS
0.03
0.02
gog @ 0.25 IDSS
0.1
0.01
10
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
4178
10
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
MMBF5484LT1
SPARAMETERS
30
20
10
350
340
330
30
0.7
40
100
310
50
300
60
290
70
280
80
350
340
330
320
0.04
200
300
0.03
400
100
500
200
0.5
ID = IDSS
0.4
310
600
300
60
70
40
10
ID = 0.25 IDSS
0.6
50
320
20
0.02
700
400
500
300
800
600
900
0.01
290
700
80
800
0.3
900
90
270
100
260
90
250
270
500
600
100
ID = IDSS
110
280
0.0
100
110
700
600
700
260
ID = 0.25 IDSS
250
0.01
800
240
120
120
240
800
0.02
900
230
130
230
130
900
220
140
150
160
170
180
190
200
140
210
20
10
350
150
160
170
180
190
200
210
340
330
Figure 19. S12g
340
330
30
0.5
40
220
0.04
Figure 18. S11g
30
0.03
320
20
10
40
0
1.5
1.0
100
100
0.4
ID = IDSS
350
300
200
500
320
400
700
600
800
0.9
900
310
50
300
60
290
70
280
80
270
90
270
100
260
100
260
110
250
110
250
120
240
120
240
130
230
130
230
140
220
140
220
50
100
0.3
0.8
60
0.2
70
310
ID = 0.25 IDSS
80
0.1
300
0.7
290
280
0.6
900
90
900
150
160
170
180
190
200
210
Figure 20. S21g

150
160
170
180
190
200
210
Figure 21. S22g

4179
MOTOROLA
JFET Chopper
MMBFJ175LT1
PChannel Depletion
2 SOURCE
3
GATE
1 DRAIN
1
2
MAXIMUM RATINGS
Rating
Drain Gate Voltage
Symbol
Value
Unit
VDG
25
VGS(r)
25

SOT 23 (TO 236AB)
Symbol
Max
Unit

TA = 25C
Derate above 25C
Characteristic
PD
225
mW
1.8
mW/C
RqJA
556
C/W
TJ, Tstg
55 to +150
DEVICE MARKING
MMBFJ175LT1 = 6W

Symbol
Min
Max
Unit
V(BR)GSS
30

(VDS = 0 V, VGS = 20 V)
IGSS
1.0
nA

(VDS = 15, ID = 10 nA)
VGS(OFF)
3.0
6.0
Zero Gate Voltage Drain Current (2)

(VGS = 0, VDS = 15 V)
IDSS
7.0
60
mA

(VDS = 15 V, VGS = 10 V)
ID(off)
1.0
nA
Drain Source On Resistance

(ID = 500 A)
rDS(on)
125
Ciss
11
Crss
5.5
Characteristic
OFF CHARACTERISTICS
(VDS = 0, ID = 1.0 A)
ON CHARACTERISTICS
Input Capacitance
VDS = 0, VGS = 10 V
f = 1.0 MHz

1. FR5 = 1.0 x 0.75 x 0.062 in.
300 s, Duty Cycle
pF
F
v 2.0%.
4180
MOTOROLA
JFET Chopper
PChannel Depletion
2 SOURCE
MMBFJ177LT1
3
GATE
1 DRAIN
3
1
MAXIMUM RATINGS
Rating
DrainGate Voltage
Symbol
Value
Unit
VDG
25
Vdc
VGS(r)
25
Vdc

SOT 23 (TO 236AB)
Symbol
Max
Unit

TA = 25C
Derate above 25C
Characteristic
PD
225
mW
1.8
mW/C
RqJA
556
C/W
TJ, Tstg
55 to +150
DEVICE MARKING
MMBFJ177LT1 = 6Y

Characteristic
Symbol
Min
Max
Unit

(VDS = 0, ID = 1.0 Adc)
V(BR)GSS
30
Vdc

IGSS
1.0
nAdc

VGS(off)
0.8
2.5
Vdc

(VGS = 0, VDS = 15 Vdc)
IDSS
1.5
20
mAdc

ID(off)
1.0
nAdc
rDS(on)
300
Ciss
11
pF
Crss
5.5
OFF CHARACTERISTICS
ON CHARACTERISTICS
Drain Source On Resistance

(ID = 500 Adc)
Input Capacitance
VDS = 0, VGS = 10 Vdc

f = 1.0 MHz
1. FR 5 = 1.0
0.75 0.062 in.
2. Pulse Test: Pulse Width < 300 s, Duty Cycle 2%.
4181
MOTOROLA
JFET VHF/UHF Amplifier Transistor
NChannel
MMBFJ309LT1
MMBFJ310LT1
2 SOURCE
3
GATE
1 DRAIN
3
1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DrainSource Voltage
VDS
25
Vdc
GateSource Voltage
VGS
25
Vdc
IG
10
mAdc
Gate Current

SOT 23 (TO 236AB)
Characteristic
Symbol
Max
Unit

TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
RqJA
556
C/W
TJ, Tstg
55 to +150
DEVICE MARKING
MMBFJ309LT1 = 6U; MMBFJ310LT1 = 6T

Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)GSS
25
Vdc
IGSS
1.0
1.0
nAdc
Adc
MMBFJ309
MMBFJ310
VGS(off)
1.0
2.0
4.0
6.5
Vdc
MMBFJ309
MMBFJ310
IDSS
12
24
30
60
mAdc
VGS(f)
1.0
Vdc
Forward Transfer Admittance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
|Yfs|
8.0
18
mmhos
Output Admittance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
|yos|
250
mhos
Input Capacitance (VGS = 10 Vdc, VDS = 0 Vdc, f = 1.0 MHz)
Ciss
5.0
pF
Reverse Transfer Capacitance (VGS = 10 Vdc, VDS = 0 Vdc, f = 1.0 MHz)
Crss
2.5
pF
en
10
nV Hz
OFF CHARACTERISTICS
GateSource Breakdown Voltage (IG = 1.0 Adc, VDS = 0)
Gate Reverse Current (VGS = 15 Vdc)
Gate Reverse Current (VGS = 15 Vdc, TA = 125C)
ON CHARACTERISTICS
(VDS = 10 Vdc, VGS = 0)
GateSource Forward Voltage (IG = 1.0 mAdc, VDS = 0)

(VDS = 10 Vdc, ID = 10 mAdc, f = 100 Hz)
1. FR 5 = 1.0
4182
0.75 0.062 in.
MMBFJ309LT1 MMBFJ310LT1
50
SOURCE
50
LOAD
U310
C3
L2P
L1
L2S
C2
C1
C4
C6
C5
C7
1.0 k
RFC
+VDD
C1 = C2 = 0.8 10 pF, JFD #MVM010W.

C3 = C4 = 8.35 pF Erie #539002D.
C5 = C6 = 5000 pF Erie (2443000).
RFC = 0.33 H Miller #923030.
60
VDS = 10 V
TA = 55C
50
50
+ 25C
IDSS
+ 25C
40
40
30
30
+150C
20
20
+ 25C
55C
10
5.0
+150C 10
0
0
1.0
4.0
3.0
2.0
35
30
20
+150C
15
+ 25C
55C
10
+150C
5.0
0
5.0
4.0
Yos
VGS(off) = 2.3 V =
VGS(off) = 5.7 V =
10
10
120
RDS
CAPACITANCE (pF)
100
1.0 k
1.0
2.0

Yfs
10 k
3.0
1.0 k
Yfs
+ 25C
25

100 k
TA = 55C
VDS = 10 V
f = 1.0 MHz
96
7.0
72
Cgs
4.0
48
24
Cgd
60
70
70
1.0
100
0.01
1.0
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100

0
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
0

4183
|S21|, |S11|
0.85 0.45
2.4
0.79 0.39
|S12|, |S22|
0.060 1.00
S22
VDS = 10 V
ID = 10 mA
TA = 25C
24
3.0
0.048 0.98
S21
Y11
18
1.8
Y21
12
1.2
0.73 0.33
VDS = 10 V
ID = 10 mA
TA = 25C
0.67 0.27
0.024 0.94
0.61 0.21
0.6
0.012 0.92
S12
Y12
0
100
200
300
500
f, FREQUENCY (MHz)
700
0.55 0.15
100
1000

22
160
40
200
300
500
f, FREQUENCY (MHz)
11, 12
20 120
40
0.90
86
40 100
85
60
80
120 84
80
60
100
40
120
20
100
21, 22
0
11
20
21
700 1000

12, 22
20 87
21, 11
180 50
170
0.036 0.96
S11
Y22
6.0
Y12 (mmhos)
|Y11|, |Y21 |, |Y22 | (mmhos)
30
21
22
20
60
80
30
40
100
20
140
10
12
11
130
0
100
140
VDS = 10 V
ID = 10 mA
TA = 25C
200
300
500
f, FREQUENCY (MHz)
180
200 82
1000

8.0
24
7.0
21
6.0
18
5.0
15
Gpg
4.0
12
NF
3.0
9.0
2.0
6.0
1.0
3.0
0
4.0
6.0
8.0
10 12
14 16
18
20

4184
11
200
300
500
f, FREQUENCY (MHz)
700
80
100
1000
26
VDD = 20 V
f = 450 MHz
BW 10 MHz
CIRCUIT IN FIGURE 1
22
0
24
6.0
VDS = 10 V
ID = 10 mA
TA = 25C

versus Frequency
7.0
60
12
160 83
700
21
22
5.0
4.0
3.0
2.0
18
Gpg
VDS = 10 V
ID = 10 mA
TA = 25C
CIRCUIT IN FIGURE 1
14
10
NF
150
6.0
1.0
2.0
0
50
100
200 300
f, FREQUENCY (MHz)
500 700 1000

versus Frequency
C1
C6
U310
S
D
G
C3
L1
INPUT
RS = 50
C4
L3
OUTPUT
RL = 50
C5
C2
L2
L4
VS

trimmer.
L1 = 1/8 x 1/32 x 15/8 copper bar.
L3 = 1/8 x 1/32 x 17/8 copper bar.
VD
SHIELD
BW (3 dB) 36.5 MHz

ID 10 mAdc
VDS 20 Vdc

+40
+20
0
20
40
U310 JFET
VDS = 20 Vdc
ID = 10 mAdc
F1 = 449.5 MHz
F2 = 450.5 MHz
FUNDAMENTAL OUTPUT
60
80
100
120
120
100
60
40
20
80
+20
4185
MOTOROLA
JFET Transistor
NChannel
2 SOURCE
MMBFU310LT1
3
GATE
1 DRAIN
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DrainSource Voltage
VDS
25
Vdc
GateSource Voltage
VGS
25
Vdc
IG
10
mAdc
Symbol
Max
Unit

TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
RqJA
556
C/W
TJ, Tstg
55 to +150
Gate Current

SOT 23 (TO 236AB)
Characteristic
DEVICE MARKING
MMBFU310LT1 = 6C

Characteristic
Symbol
Min
Max
Unit
V(BR)GSS
25
Vdc
Gate 1 Leakage Current (VGS = 15 Vdc, VDS = 0)
IG1SS
150
pA
Gate 2 Leakage Current (VGS = 15 Vdc, VDS = 0, TA = 125C)
IG2SS
150
nAdc
VGS(off)
2.5
6.0
Vdc
IDSS
24
60
mAdc
VGS(f)
1.0
Vdc

|Yfs|
10
18
mmhos
Output Admittance
|yos|
250
mhos
Input Capacitance
(VGS = 10 Vdc, VDS = 0 Vdc, f = 1.0 MHz)
Ciss
5.0
pF

(VGS = 10 Vdc, VDS = 0 Vdc, f = 1.0 MHz)
Crss
2.5
pF
OFF CHARACTERISTICS
GateSource Breakdown Voltage (IG = 1.0 Adc, VDS = 0)
Gate Source Cutoff Voltage (VDS = 10 Vdc, ID = 1.0 nAdc)
ON CHARACTERISTICS
GateSource Forward Voltage (IG = 10 mAdc, VDS = 0)
1. FR 5 = 1.0
0.75 0.062 in.
4186
MMBFU310LT1
50
SOURCE
50
LOAD
U310
C3
L2P
L1
L2S
C2
C1
C4
C6
C5
C7
1.0 k
RFC
+VDD
C1 = C2 = 0.8 10 pF, JFD #MVM010W.

C3 = C4 = 8.35 pF Erie #539002D.
C5 = C6 = 5000 pF Erie (2443000).
RFC = 0.33 H Miller #923030.
60
VDS = 10 V
TA = 55C
50
50
+ 25C
IDSS
+ 25C
40
40
30
30
+150C
20
20
+ 25C
55C
10
5.0
+150C 10
0
0
1.0
4.0
3.0
2.0
35
30
20
+150C
15
+ 25C
55C
10
+150C
5.0
0
5.0
4.0
Yos
VGS(off) = 2.3 V =
VGS(off) = 5.7 V =
10
10
120
RDS
CAPACITANCE (pF)
100
1.0 k
1.0
2.0

Yfs
10 k
3.0
1.0 k
Yfs
+ 25C
25

100 k
TA = 55C
VDS = 10 V
f = 1.0 MHz
96
7.0
72
Cgs
4.0
48
24
Cgd
60
70
70
1.0
100
0.01
1.0
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100

0
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
0

4187
MMBFU310LT1
|S21|, |S11|
0.85 0.45
2.4
0.79 0.39
|S12|, |S22|
0.060 1.00
S22
VDS = 10 V
ID = 10 mA
TA = 25C
24
3.0
0.048 0.98
S21
Y11
18
1.8
Y21
12
1.2
0.73 0.33
VDS = 10 V
ID = 10 mA
TA = 25C
0.67 0.27
0.024 0.94
0.61 0.21
0.6
0.012 0.92
S12
Y12
0
100
200
300
500
f, FREQUENCY (MHz)
700
0.55 0.15
100
1000

22
160
40
200
300
500
f, FREQUENCY (MHz)
11, 12
20 120
40
0.90
86
40 100
85
60
80
120 84
80
60
100
40
120
20
100
21, 22
0
11
20
21
700 1000

12, 22
20 87
21, 11
180 50
170
0.036 0.96
S11
Y22
6.0
Y12 (mmhos)
|Y11|, |Y21 |, |Y22 | (mmhos)
30
21
22
20
60
80
30
40
100
20
140
10
12
11
130
0
100
140
VDS = 10 V
ID = 10 mA
TA = 25C
200
300
500
f, FREQUENCY (MHz)
180
200 82
1000

8.0
24
7.0
21
6.0
18
5.0
15
Gpg
4.0
12
NF
3.0
9.0
2.0
6.0
1.0
3.0
0
4.0
6.0
8.0
10 12
14 16
18
20

4188
11
200
300
500
f, FREQUENCY (MHz)
700
80
100
1000
26
VDD = 20 V
f = 450 MHz
BW 10 MHz
CIRCUIT IN FIGURE 1
22
0
24
6.0
VDS = 10 V
ID = 10 mA
TA = 25C

versus Frequency
7.0
60
12
160 83
700
21
22
5.0
4.0
3.0
2.0
18
Gpg
VDS = 10 V
ID = 10 mA
TA = 25C
CIRCUIT IN FIGURE 1
14
10
NF
150
6.0
1.0
2.0
0
50
100
200 300
f, FREQUENCY (MHz)
500 700 1000

versus Frequency
MMBFU310LT1
C1
C6
U310
S
D
G
C3
L1
INPUT
RS = 50
C4
L3
OUTPUT
RL = 50
C5
C2
L2
L4
VS

trimmer.
L1 = 1/8 x 1/32 x 15/8 copper bar.
L3 = 1/8 x 1/32 x 17/8 copper bar.
VD
SHIELD
BW (3 dB) 36.5 MHz

ID 10 mAdc
VDS 20 Vdc

+40
+20
0
20
40
U310 JFET
VDS = 20 Vdc
ID = 10 mAdc
F1 = 449.5 MHz
F2 = 450.5 MHz
FUNDAMENTAL OUTPUT
60
80
100
120
120
100
60
40
20
80
+20
4189
MOTOROLA
JFET VHF Amplifier

NChannel Depletion
MPF102
1 DRAIN
3
GATE
2 SOURCE
MAXIMUM RATINGS
Symbol
Value
Unit
Rating
VDS
25
Vdc
Drain Gate Voltage
VDG
25
Vdc
Gate Source Voltage
VGS
25
Vdc
Gate Current
IG
10
mAdc

Derate above 25C
PD
350
2.8
mW
mW/C
TJ
125
Tstg
65 to +150
1
2
CASE 2904, STYLE 5

TO92 (TO226AA)

Characteristic
Symbol
Min
Max
Unit
V(BR)GSS
25
Vdc
2.0
2.0
nAdc
Adc
OFF CHARACTERISTICS
(IG = 10 Adc, VDS = 0)
(VGS = 15 Vdc, VDS = 0)
(VGS = 15 Vdc, VDS = 0, TA = 100C)
IGSS

VGS(off)
8.0
Vdc
Gate Source Voltage

VGS
0.5
7.5
Vdc
IDSS
2.0
20
mAdc
2000
1600
7500
ON CHARACTERISTICS

mmhos

(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
(VDS = 15 Vdc, VGS = 0, f = 100 MHz)
yfs
Input Admittance
(VDS = 15 Vdc, VGS = 0, f = 100 MHz)
Re(yis)
800
mmhos
Output Conductance
(VDS = 15 Vdc, VGS = 0, f = 100 MHz)
Re(yos)
200
mmhos
Input Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
7.0
pF

(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Crss
3.0
pF
1. Pulse Test; Pulse Width
4190
MPF102
POWER GAIN
24
f = 100 MHz
20
16
12
400 MHz
Tchannel = 25C
VDS = 15 Vdc
VGS = 0 V
8.0
4.0
0
4.0
6.0
8.0
10
2.0
12
14
Reference
Designation
NEUTRALIZING
COIL
INPUT
TO 50
SOURCE
C2
L1
C4
C5
Rg
Adjust VGS for

ID = 50 mA
VGS < 0 Volts
*L2
*L3
TO 500
LOAD
L2
CASE
L3
C7
C6
VGS
*L1
C3
C1
NOTE:
COMMON
VDS
+15 V
ID = 5.0 mA


**L1
**L2
**L3
VALUE
100 MHz
400 MHz
C1
7.0 pF
1.8 pF
C2
1000 pF
17 pF
C3
3.0 pF
1.0 pF
C4
112 pF
0.88.0 pF
C5
112 pF
0.88.0 pF
C6
0.0015 F
0.001 F
C7
0.0015 F
0.001 F
L1
3.0 H*
0.2 H**
L2
0.15 H*
0.03 H**
L3
0.14 H*
0.022 H**

(AIR CORE).
(AIR CORE).
4191
MPF102
NOISE FIGURE
(Tchannel = 25C)
10
6.5
ID = 5.0 mA
VDS = 15 V
VGS = 0 V
5.5
8.0
6.0
f = 400 MHz
4.0
2.0
4.5
f = 400 MHz
3.5
2.5
100 MHz
100 MHz
1.5
0
2.0
4.0 6.0 8.0

10
12
14
16
18
20
2.0
4.0
6.0
8.0
10
12
14
+ 40
3RD ORDER INTERCEPT
+ 20
VDS = 15 Vdc
f1 = 399 MHz
f2 = 400 MHz
0
20
40
60
80
100
FUNDAMENTAL
OUTPUT @ IDSS,
0.25 IDSS
120
140
160
120
100
3RD ORDER IMD

OUTPUT @ IDSS,
0.25 IDSS
80
60
40
20
+ 20
4192
MPF102
30
20
bis @ IDSS
10
7.0
5.0
3.0
gis @ IDSS
2.0
gis @ 0.25 IDSS
1.0
0.7
0.5
0.3
10
bis @ 0.25 IDSS

20
30
50 70 100
200 300
f, FREQUENCY (MHz)


500 700 1000
5.0
3.0
2.0
brs @ IDSS
1.0
0.7
0.5
0.25 IDSS
0.3
0.2
0.1
0.07
0.05

10
20
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
10
10
7.0
5.0
gfs @ IDSS
gfs @ 0.25 IDSS
3.0
2.0
1.0
0.7
0.5
0.3
0.2
10
30
|bfs| @ IDSS
|bfs| @ 0.25 IDSS


20
5.0
2.0
1.0
0.5
0.2
gos @ IDSS
0.1
0.05
gos @ 0.25 IDSS
0.02
0.01
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
10
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
4193
MPF102
SPARAMETERS
30
20
10
0
1.0
40
350
100
340
330
320
40
310
50
20
10
340
330
0.4
320
0.3
400
310
300
0.8
900
500
ID = IDSS
60
800
300
400
60
500
0.7
600
0.6
300
0.1
500
70
290
400
700
800
700
800
290
0.2
700
600
600
80
350
300
200
50
70
200
100
0.9
30
ID = 0.25 IDSS
280
80
300
280
0.0
200
900
270
90
100
260
100
260
110
250
110
250
120
240
120
240
130
230
130
230
140
220
140
220
90
900
150
160
170
180
190
200
210
150
160
Figure 10. S11s

30
20
10
350
170
340
330
30
20
10
80
90
700
500
0.3
ID = 0.25 IDSS
500
0
350
340
330
100 200
ID = 0.25 IDSS
300
1.0
400
100 200
500
300
600
400
700
0.9
500
800
600
ID = IDSS
700
900
800
900
0.8
310
50
300
60
290
70
280
80
270
90
270
260
100
260
250
110
250
240
120
240
230
130
230
220
140
220
320
310
300
0.7
290
0.3
280
0.6
100
400
400
110
0.4
800
600
100
210
900
700
600
200
40
0.5
60
900
190
320
0.6
50
800
180
Figure 11. S12s
40
70
270
100
300
200
0.4
100
0.5
300
120
ID = IDSS
200
130
0.6
140
150
160
170
180
190
Figure 12. S21s

4194
200
210
150
160
170
180
190
200
210
Figure 13. S22s

MPF102
10
7.0
5.0


20
gig @ IDSS
grg @ 0.25 IDSS
3.0
2.0
1.0
0.7
0.5
big @ IDSS
big @ 0.25 IDSS
0.3
0.2
10
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
0.5
0.3
0.1
0.07
0.05
0.25 IDSS
0.03
0.02
0.01
0.007
0.005
500 700 1000
brg @ IDSS
0.2

10
10
7.0
5.0
gfg @ IDSS
3.0
gfg @ 0.25 IDSS
2.0
1.0
0.7
0.5
bfg @ IDSS
0.3
brg @ 0.25 IDSS
0.2
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000


20
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
gog @ IDSS
0.03
0.02
gog @ 0.25 IDSS
0.1
0.01
10
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
10
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
4195
MPF102
SPARAMETERS
30
20
10
350
340
330
30
0.7
40
100
310
50
300
60
290
70
280
80
350
340
330
320
0.04
200
300
0.03
400
100
500
200
0.5
ID = IDSS
0.4
310
600
300
60
70
40
10
ID = 0.25 IDSS
0.6
50
320
20
0.02
700
400
500
300
800
600
900
0.01
290
700
80
800
0.3
900
90
270
100
260
90
250
270
500
600
100
ID = IDSS
110
280
0.0
100
110
700
600
700
260
ID = 0.25 IDSS
250
0.01
800
240
120
120
240
800
0.02
900
230
130
230
130
900
220
140
150
160
170
180
190
200
140
210
20
10
350
150
160
170
180
190
200
210
340
330
Figure 19. S12g
340
330
30
0.5
40
220
0.04
Figure 18. S11g
30
0.03
320
20
10
40
0
1.5
1.0
100
100
0.4
ID = IDSS
350
300
200
500
320
400
700
600
800
0.9
900
310
50
300
60
290
70
280
80
270
90
270
100
260
100
260
110
250
110
250
120
240
120
240
130
230
130
230
140
220
140
220
50
100
0.3
0.8
60
0.2
70
310
ID = 0.25 IDSS
80
0.1
300
0.7
290
280
0.6
900
90
900
150
160
170
180
190
Figure 20. S21g

4196
200
210
150
160
170
180
190
200
210
Figure 21. S22g

MOTOROLA
JFETs Switching
MPF4392
MPF4393
1 DRAIN
NChannel Depletion
3
GATE
2 SOURCE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VDS
30
Vdc
Drain Gate Voltage
VDG
30
Vdc
GateSource Voltage
VGS
30
Vdc
IG(f)
50
mAdc
PD
350
2.8
mW
mW/C
Tchannel,
Tstg
65 to +150

Derate above 25C
Operating and Storage Channel
Temperature Range
1
2
CASE 2904, STYLE 5

TO92 (TO226AA)

Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)GSS
30
Vdc
1.0
0.2
nAdc
Adc
1.0
0.1
nAdc
Adc
2.0
0.5
5.0
3.0
25
5.0
75
30
0.4
0.4
60
100
17
12
OFF CHARACTERISTICS
(IG = 1.0 Adc, VDS = 0)
(VGS = 15 Vdc, VDS = 0)
(VGS = 15 Vdc, VDS = 0, TA = 100C)
IGSS
DrainCutoff Current
(VDS = 15 Vdc, VGS = 12 Vdc, TA = 100C)
ID(off)
Gate Source Voltage

VGS
MPF4392
MPF4393
Vdc
ON CHARACTERISTICS
(VDS = 15 Vdc, VGS = 0)
(ID = 6.0 mAdc, VGS = 0)
(ID = 3.0 mAdc, VGS = 0)
(ID = 1.0 mAdc, VGS = 0)
IDSS
MPF4392
MPF4393
mAdc
VDS(on)
MPF4392
MPF4393
Vdc
rDS(on)
MPF4392
MPF4393

(VDS = 15 Vdc, ID = 5.0 mAdc, f = 1.0 kHz)
|yfs|
MPF4392
MPF4393
mmhos
REV 1
4197
MPF4392 MPF4393
Characteristic
Symbol
Min
Typ
Max
60
100
6.0
10
2.5
3.2
3.5
2.0
2.5
5.0
5.0
15
29
20
35
4.0
6.5
15
15
20
37
35
55
Unit

DrainSource ON Resistance
(VGS = 0, ID = 0, f = 1.0 kHz)
rds(on)
MPF4392
MPF4393
Input Capacitance (VGS = 15 Vdc, VDS = 0, f = 1.0 MHz)
Ciss

(VGS = 12 Vdc, VDS = 0, f = 1.0 MHz)
(VDS = 15 Vdc, ID = 10 mAdc, f = 1.0 MHz)
Crss
pF
pF
Rise Time (See Figure 2)
(ID(on) = 6.0 mAdc)
(ID(on) = 3.0 mAdc)
MPF4392
MPF4393
tr
Fall Time (See Figure 4)

(VGS(off) = 7.0 Vdc)
MPF4392
MPF4393
TurnOn Time (See Figures 1 and 2)

(ID(on) = 6.0 mAdc)
(ID(on) = 3.0 mAdc)
MPF4392
MPF4393
TurnOff Time (See Figures 3 and 4)

MPF4392
MPF4393
ns
tf
ns
ton
ns
toff
ns

1000
500
200
RK = RD
TJ = 25C
500
MPF4392 VGS(off) = 7.0 V

MPF4393
= 5.0 V
200
1000
100
50
20
10
5.0
RK = 0
50
20
10
5.0 7.0 10
2.0 3.0
20
30
1.0
0.5 0.7 1.0
50
500
200

MPF4393
= 5.0 V
200
20
30
50
1000
TJ = 25C
100
RK = RD
20
10
RK = 0
RK = RD
TJ = 25C
MPF4393
= 5.0 V
100
50
20
RK = 0
10
5.0
2.0
2.0
2.0 3.0
5.0 7.0 10
20

4198
5.0 7.0 10
2.0 3.0
Figure 2. Rise Time
500
1.0
0.5 0.7 1.0
RK = 0
2.0
1000
5.0

MPF4393
= 5.0 V
100
50
TJ = 25C
5.0
2.0
1.0
0.5 0.7 1.0
RK = RD
30
50
1.0
0.5 0.7 1.0
5.0 7.0 10
2.0 3.0
20
30
50
Figure 4. Fall Time

MPF4392 MPF4393
NOTE 1
VGG + VDS.
discharges through the series combination of RGen and RK. Cgd must
discharge to VDS(on) through RG and RK in series with the parallel
combination of effective load impedance (RD) and DrainSource
Resistance (rds). During the turnoff, this charge flow is reversed.
The above switching curves show two impedance conditions:
1) RK is equal to RD which simulates the switching behavior of
cascaded stages where the driving source impedance is normally the
load impedance of the previous stage, and 2) RK = 0 (low impedance)
the driving source impedance is that of the generator.
VDD
RD
SET VDS(off) = 10 V
INPUT
RK
RT
RGEN
50
OUTPUT
RGG
50
50
VGG
VGEN
INPUT PULSE
tr 0.25 ns
tf 0.5 ns
PULSE WIDTH = 2.0 s
DUTY CYCLE 2.0%
RGG
& RK
RD = RD(RT + 50)
RD + RT + 50
15
20
MPF4392
10
C, CAPACITANCE (pF)
y fs , FORWARD TRANSFER ADMITTANCE (mmhos)
10
MPF4393
7.0
5.0
Tchannel = 25C
VDS = 15 V
3.0
Cgs
7.0
5.0
Cgd
Tchannel = 25C
(Cds IS NEGLIGIBLE)
3.0
2.0
1.5
2.0
0.5 0.7 1.0
5.0 7.0 10
2.0 3.0
20
30
1.0
0.03 0.05
50
0.1
30
2.0
IDSS
= 10
160 mA
25
mA
50 mA
75 mA 100 mA
125 mA
rds(on) , DRAINSOURCE ONSTATE
rds(on) , DRAINSOURCE ONSTATE

RESISTANCE (OHMS)
10
200
120
80
40
Tchannel = 25C
0
0.3 0.5 1.0

3.0 5.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0

1.8
ID = 1.0 mA
VGS = 0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
70
40
110
10
20
50
80
140
170

4199
MPF4392 MPF4393
90
10
Tchannel = 25C
80
70
8.0
7.0
rDS(on) @ VGS = 0
60
50
NOTE 2
9.0
6.0
VGS(off)
5.0
40
4.0
30
3.0
20
2.0
10
1.0
0
0
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150
IDSS, ZEROGATE VOLTAGE DRAIN CURRENT (mA)
V GS , GATESOURCE VOLTAGE
(VOLTS)
r ds(on), DRAINSOURCE ONSTATE

RESISTANCE (OHMS)
100

determinant of other JFET characteristics. Figure 10 shows
the relationship of GateSource Off Voltage (VGS(off)) and
This data will be useful in predicting the characteristic variations
for a given part number.
For example:
Unknown
rds(on) and VGS range for an MPF4392
The electrical characteristics table indicates that an MPF4392
has an IDSS range of 25 to 75 mA. Figure 10 shows rds(on) = 52
Ohms for IDSS = 25 mA and 30 Ohms for IDSS = 75 mA. The
corresponding VGS values are 2.2 volts and 4.8 volts.

4200
Section 5
SmallSignal Tuning
In Brief . . .
Packaging options include plastic DIPs and surface mount
packages. Most SOT23, SC59, SC70/SOT323 and
SOT223 package devices are only available in Tape and
Reel.
CASE 51-02
(DO-204AA)
CASE 29-04
(TO-226AA)
2
CASE 182-02
(TO-226AC)
3
3
1
4
1
2
2
CASE 318-08
SOT-23 (TO-236AB)
CASE 318D-04
SC-59
CASE 318E-04
SOT-223 (TO-261AA)
3
2
CASE 419-02
SC-70/SOT-323
14
CASE 425-04
SOD-123
CASE 463-01
SC90/SOT-416
16
1
CASE 646-06
CASE 648-08
16
14
1
CASE 751A-03
SO-14
CASE 751B-05
SO-16
51

SOT-23, SC-59, SC-70/SOT-323, SOT-223, SO14 and SO-16 packages are available only in Tape and
Reel. Use the appropriate suffix indicated below to order any of the SOT-23, SC-59, SC-70/SOT-323,
SOT-223, SO14 and SO-16 packages. (See Section 6 on Packaging for additional information).
SOT-23:

SC-59:

SC-70/
SOT-323:

SOT-223:

SO-14:

SO-16:


TO-92:

Reel.
*requirements.

SOT-23, SC-59 and the SC-70/SOT-323 packages have a device marking and a date code etched on
the device. The generic example below depicts both the device marking and a representation of the date
code that appears on the SC-70/SOT-323, SC-59 and SOT-23 packages.
ABC D
52
MOTOROLA
Silicon Tuning Diodes
1N5148
1N5148A
Designed for electronic tuning and harmonicgeneration applications, and provide

solidstate reliability to replace mechanical tuning methods.
Guaranteed HighFrequency Q
Guaranteed Wide Tuning Range
Standard 10% Capacitance Tolerance
Complete Typical Design Curves
6.8 47 pF EPICAP
VOLTAGEVARIABLE
CAPACITANCE DIODES

Rating
Symbol
Value
Unit
Reverse Voltage
VR
60
Volts
Forward Current
IF
250
mAdc
RF Power Input(1)
Pin
5.0
Watts
Device Dissipation @ TA = 25C

Derate above 25C
PD
400
2.67
mW
mW/C
Device Dissipation @ TC = 25C

Derate above 25C
PC
2.0
13.3
Watts
mW/C
TJ
+175
Tstg
65 to + 200
CASE 5102
(DO204AA)

Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)R
60
70
Vdc
Reverse Voltage Leakage Current (VR = 55 Vdc, TA = 25C)

IR
0.02
20
Adc
Series Inductance (f = 250 MHz, L 1/16)
LS
4.0
nH
Case Capacitance (f = 1.0 MHz, L 1/16)
CC
0.17
pF
TCC
200
ppm/C
Reverse Breakdown Voltage (IR = 10 Adc)
Diode Capacitance Temperature Coefficient (VR = 4.0 Vdc, f = 1.0 MHz)

1. The RF power input rating assumes that an adequate heatsink is provided.
CT, Diode Capacitance
VR = 4.0 Vdc, f = 1.0 MHz
pF
Q, Figure of Merit
VR = 4.0 Vdc,
f = 50 MHz
VR = 4.0 Vdc, f = 1.0 MHz
TR, Tuning Ratio

C4/C60
f = 1.0 MHz
Device
Min
Typ
Max
Min
Min
Typ
Min
Typ
1N5148
1N5148A
42.3
44.7
47
47
51.7
49.3
200
200
0.43
0.43
0.45
0.45
3.2
3.2
3.4
3.4
53
1N5148 1N5148A
PARAMETER TEST METHODS
1. LS, SERIES INDUCTANCE
LS is measured on a shorted package at 250 MHz using
an impedance bridge (Boonton Radio Model 250A RX
Meter). L = lead length.
(Boonton Electronics Model 33AS8).

6. , DIODE CAPACITANCE REVERSE VOLTAGE SLOPE
The diode capacitance, CT (as measured at VR = 4.0 Vdc,
f = 1.0 MHz) is compared to CT (as measured at VR = 60
Vdc, f = 1.0 MHz) by the following equation which defines
.
log CT(4) log CT(60)
2. CC, CASE CAPACITANCE

CC is measured on an open package at 1.0 MHz using a
capacitance bridge (Boonton Electronics Model 75A or
equivalent).
3. CT, DIODE CAPACITANCE

(C T = C C + C J ). C T is measured at 1.0 MHz using a capacitance bridge (Boonton Electronics Model 75A or
equivalent).
CT
+ 2pGfC
TCC
Q, FIGURE OF MERIT
10
7.0
5.0
3.0
1.0
1.0
TA = 25C
f = 50 MHz
5.0 7.0 10
3.0
300
100
50 60
30
1N5148
1000
700
500
1.0
3.0
5.0 7.0 10
Figure 1. Diode Capacitance versus

Reverse Voltage
50 60
140
NORMALIZED Q, FIGURE OF MERIT (%)
NORMALIZED DIODE CAPACITANCE
30
Figure 2. Figure of Merit versus

Reverse Voltage
1.020
1.010
1.000
0.990
0.980
54
3000
1N5148
0.960
100
CT(65C)
106
+ CT () 85C)
85 ) 65
CT(25C)
10000
7000
5000
TA = 25C
f = 1 MHz
30
0.970
+ VKa
7. TCC, DIODE CAPACITANCE TEMPERATURE

COEFFICIENT
TCC is guaranteed by comparing CT at VR = 4.0 Vdc,
f = 1.0 MHz, TA = 65C with CT at VR = 4.0 Vdc, f =
1.0 MHz, TA = +85C in the following equation which defines TCC:
5. Q, FIGURE OF MERIT
Q is calculated by taking the G and C readings of an
admittance bridge at the specified frequency and substituting in the following equations:
100
70
50
log 60 log 4
Note that a CT versus VR law is assumed as shown in the

following equation where CC is included.
4. TR, TUNING RATIO

TR is the ratio of CT measured at 4.0 Vdc divided by CT
measured at 60 Vdc.
NORMALIZED TO C4
VR = 4 Vdc
TA = 25C
75
50
25
+25
+50
+75
+100
130
120
110
100
90
80
PERCENT OF Q @ 25C
VR = 4 Vdc
f = 50 MHz
70
65 50
25
+25
+50
Figure 3. Normalized Diode Capacitance

versus Junction Temperature
Figure 4. Normalized Figure of Merit

+75 +85
40
2000
32
1000
Q, FIGURE OF MERIT
I R , REVERSE CURRENT (nA)
1N5148 1N5148A
24
16
+ 75C
700
1N5148
500
300
+ 25C
VR = 4 Vdc
0
0
10
40
20
30
50
60
Figure 5. Reverse Current versus Reverse

Bias Voltage
100
10
30
50
f, FREQUENCY (MHz)
70
100
Figure 6. Figure of Merit versus Frequency
55
MOTOROLA
1N5446ARL
1N5448ARL
1N5456A
These are epitaxial passivated abrupt junction tuning diodes designed for electronic
tuning, FM, AFC and harmonicgeneration applications in AM through UHF ranges,
providing solidstate reliability to replace mechanical tuning methods.
Excellent Q Factor at High Frequencies
Guaranteed Capacitance Change 2.0 to 30 V
Capacitance Tolerance 10% and 5.0%
6.8 100 pF
30 VOLTS
VOLTAGEVARIABLE
CAPACITANCE DIODES
CASE 5102
(DO204AA)
MAXIMUM RATINGS(1)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
30
Volts

Derate above 25C
PD
400
2.67
mW
mW/C
Operating Junction Temperature Range
TJ
+175
Tstg
65 to + 200

Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)R
30
Vdc

IR
0.02
20
Adc
Series Inductance (f = 250 MHz, lead length 1/16)
LS
4.0
nH
Case Capacitance (f = 1.0 MHz, lead length 1/16)
CC
0.17
pF
TCC
300
ppm/C
Diode Capacitance Temperature Coefficient

(Note 6) (VR = 4.0 Vdc, f = 1.0 MHz)
VR = 4.0 Vdc, f = 1.0 MHz
pF
Device
TR, Tuning Ratio

C2/C30
f = 1.0 MHz
Q, Figure of Merit
VR = 4.0 Vdc,
f = 50 MHz
Min
(Nom 10%)
Nom
Max
(Nom +10%)
Min
Max
Min
16.2
19.8
90
18
22
100
19.8
24.2
110
2.6
2.6
2.7
3.2
3.2
3.3
350
350
175
1N5446ARL
1N5448ARL
1N5456A
1. Indicates JEDEC Registered Data.
(Replaces 1N5441A/D)
56
1N5446ARL 1N5448ARL 1N5456A

1. LS, SERIES INDUCTANCE
LS is measured on a shorted package at 250 MHz using
an impedance bridge (Boonton Radio Model 250A RX
Meter or equivalent).
2. CC, CASE CAPACITANCE
CC is measured on an open package at 1.0 MHz using a
capacitance bridge (Boonton Electronics Model 75A or
equivalent).
(CT = CC + CJ). CT is measured at 1.0 MHz using a capacitance bridge (Boonton Electronics Model 75A or
equivalent).
4. TR, TUNING RATIO
measured at 30 Vdc.
Q is calculated by taking the G and C readings of an admittance bridge at the specified frequency and substituting in the following equations:
Q
+ 2pGfC
(Boonton Electronics Model 33AS8 or equivalent).

COEFFICIENT
1.0 MHz, TA = +85C in the following equation, which defines TCC:
TCC
CT(65C)
+ CT() 85C)
85 ) 65
106
CT(25C)
Accuracy limited by CT measurement to 0.1 pF.
1.046
1.036
VR = 2.0 Vdc
1.026
1.016
VR = 4.0 Vdc
1.006
VR = 30 Vdc
0.996
0.986
0.976
0.966
75
50
25
0
+25
+50
TJ, TEMPERATURE (C)
+75
+100
+125
Figure 1. Normalized Diode Capacitance

TYPICAL DEVICE PERFORMANCE

1000
500
TA = 25C
f = 1.0 MHz
200
100
1N5456A
50
20
10
5.0
2.0
1.0
0.1
0.2
0.5
1.0
2.0
5.0
10
20
30
57
1N5446ARL 1N5448ARL 1N5456A

10000
TA = 25C
f = 50 MHz
2000
1000
500
1N5456A
500
300
200
100
50
1N5456A
30
20
200
100
1.0
TA = 25C
VR = 4.0 Vdc
1000
Q, FIGURE OF MERIT
Q, FIGURE OF MERIT
5000
3000
2000
10
2.0
3.0
5.0
7.0
10
10
20
Figure 3. Figure of Merit versus

Reverse Voltage
V f , FORWARD VOLTAGE (VOLTS)
1.12
TA = 125C
1.06
1.00
2.0
1.0
TA = 75C
0.94
0.50
0.20
0.10
0.05
0.02
0.01
5.0
58
200 250
100
50
20
10
5.0
30
50
70
100
f, FREQUENCY (MHz)
20
0.88
1N5456A
0.82
TA = 25C
10
0.76
15
20
25
30
0.70
75
150
225
300
375
425
IF, FORWARD CURRENT (mA)
Figure 5. Reverse Current versus Reverse

Bias Voltage
Figure 6. Forward Voltage versus

Forward Current
500
MOTOROLA
Switching Diode
BAL99LT1
ANODE
3
CATHODE
2
MAXIMUM RATINGS
3
Rating
Symbol
Value
Unit
VR
70
Vdc
IF
100
mAdc
Symbol
Max
Unit

TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
RqJA
556
C/W
PD
300
mW
2.4
mW/C
RqJA
417
C/W
TJ, Tstg
55 to +150
1
2
Characteristic

Derate above 25C

SOT 23 (TO 236AB)
DEVICE MARKING
BAL99LT1 = JF

Characteristic
Symbol
Min
Max
2.5
30
50
70
715
855
1000
1250
Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 70 Vdc)
(VR = 25 Vdc, TJ = 150C)
(VR = 70 Vdc, TJ = 150C)
Reverse Breakdown Voltage
(IR = 100 Adc)
Adc
IR
V(BR)
Vdc
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
VF
Recovery Current
(IF = 10 mAdc, VR = 5.0 Vdc, RL = 500 )
QS
45
pC
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD
1.5
pF
Reverse Recovery Time

(IF = IR = 10 mAdc, RL = 100 , measured at IR = 1.0 mAdc)
trr
6.0
ns
VFR
1.75
Vdc
Forward Recovery Voltage

(IF = 10 mAdc, tr = 20 ns)
mV
0.062 in.
0.024 in. 99.5% alumina.
1. FR 5 = 1.0
0.75
2. Alumina = 0.4
0.3
59
BAL99LT1
100
10
I R, REVERSE CURRENT ( A)
TA = 150C
10
TA = 85C
TA = 25C
1.0
TA = 125C
1.0
TA = 85C
0.1
TA = 55C
0.01
TA = 40C
TA = 25C
0.1
0.2
0.4
0.6
0.8
1.0
0.001
1.2
10
20
30
VF, FORWARD VOLTAGE (VOLTS)
Figure 1. Forward Voltage
Figure 2. Leakage Current
40
50
CD , DIODE CAPACITANCE (pF)
0.68
0.64
0.60
0.56
0.52
510
MOTOROLA
Switching Diode
BAS16LT1
3
CATHODE
1
ANODE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VR
75
Vdc
IF
200
mAdc
IFM(surge)
500
mAdc
Symbol
Max
Unit

TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
RqJA
556
C/W
PD
300
mW
2.4
mW/C
RqJA
417
C/W
TJ, Tstg
55 to +150
3
1
2
Characteristic

Derate above 25C

SOT 23 (TO 236AB)
DEVICE MARKING
BAS16LT1 = A6

Characteristic
Symbol
Min
Max
1.0
50
30
75
715
855
1000
1250
Unit
OFF CHARACTERISTICS
(VR = 75 Vdc)
(VR = 75 Vdc, TJ = 150C)
(VR = 25 Vdc, TJ = 150C)
(IBR = 100 Adc)
Adc
IR
V(BR)
Vdc
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
VF
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD
2.0
pF

(IF = 10 mAdc, tr = 20 ns)
VFR
1.75
Vdc

(IF = IR = 10 mAdc, RL = 50 )
trr
6.0
ns
Stored Charge
(IF = 10 mAdc to VR = 5.0 Vdc, RL = 500 )
QS
45
pC
mV
0.062 in.
0.024 in. 99.5% alumina.
1. FR 5 = 1.0
0.75
2. Alumina = 0.4
0.3
511
BAS16LT1
820
+10 V
2.0 k
100 H
tp
tr
0.1 F
IF
IF
trr
10%
0.1 F
90%
D.U.T.
50 INPUT
SAMPLING
OSCILLOSCOPE
50 OUTPUT
PULSE
GENERATOR
iR(REC) = 1.0 mA
IR
VR
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
INPUT SIGNAL
Notes: 3. tp trr
10
100
IR , REVERSE CURRENT (A)
TA = 150C
TA = 85C
10
TA = 40C
1.0
TA = 25C
TA = 125C
1.0
TA = 85C
0.1
TA = 55C
0.01
TA = 25C
0.001
0.1
0.2
0.4
0.6
0.8
1.0
10
1.2
20
30
40
50
CD, DIODE CAPACITANCE (pF)
0.68
0.64
0.60
0.56
0.52
512
MOTOROLA
Silicon Switching Diode
BAS16WT1
3
CATHODE
1
ANODE
3

Symbol
Max
Unit
VR
75
Recurrent Peak Forward Current
IR
200
mA
IFM(surge)
500
mA
PD
200
mW
1.6
mW/C
55 to +150
Rating

Pulse Width = 10 s
Total Power Dissipation, One Diode Loaded
TA = 25C
Derate above 25C
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
Temperature Range
TJ, Tstg
1
2
CASE 41902, STYLE 2

SC70/SOT323
Characteristic
One Diode Loaded
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
Symbol
Max
Unit
RJA
0.625
C/mW
DEVICE MARKING
BAS16WT1 = A6

Characteristic
Symbol
Min
Max
715
866
1000
1250
1.0
50
30
CD
2.0
pF

(IF = IR = 10 mA, RL = 50 ) (Figure 1)
trr
6.0
ns
Stored Charge
(IF = 10 mA to VR = 6.0 V, RL = 500 ) (Figure 2)
QS
45
PC

(IF = 10 mA, tr = 20 ns) (Figure 3)
VFR
1.75
Forward Voltage
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 50 mA)
(IF = 150 mA)
VF
Reverse Current
(VR = 75 V)
(VR = 75 V, TJ = 150C)
(VR = 25 V, TJ = 150C)
IR
Capacitance
(VR = 0, f = 1.0 MHz)
Unit
mV
REV 1
513
BAS16WT1
1 ns MAX
500
DUT
trr
10%
tif
50
DUTY CYCLE = 2%
90%
VF
Irr
100 ns
Figure 1. Reverse Recovery Time Equivalent Test Circuit
OSCILLOSCOPE
R 10 M
C 7 pF
500
VC
DUT
BAW62
VCM
20 ns MAX
D1
t
10%
VCM
243 pF
100 K
+ QaC
DUTY CYCLE = 2%
90%
Vf
400 ns
Figure 2. Recovery Charge Equivalent Test Circuit
120 ns
450
1 K
V
90%
DUT
Vfr
50
10%
DUTY CYCLE = 2%
2 ns MAX
Figure 3. Forward Recovery Voltage Equivalent Test Circuit
514
BAS16WT1
10
100
TA = 150C
10
TA = 85C
TA = 25C
1.0
TA = 40C
TA = 125C
1.0
TA = 85C
0.1
TA = 55C
0.01
TA = 25C
0.001
0.1
0.2
0.4
0.6
0.8
1.0
1.2
10
20
30
40
50
0.68
0.64
0.60
0.56
0.52
515
MOTOROLA
High Voltage Switching Diode

3
CATHODE
BAS21LT1
1
ANODE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VR
250
Vdc
IF
200
mAdc
IFM(surge)
625
mAdc
Symbol
Max
Unit

TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
RqJA
556
C/W
PD
300
mW
2.4
mW/C
RqJA
417
C/W
TJ, Tstg
55 to +150
1
2

SOT 23 (TO 236AB)
Characteristic

Derate above 25C
DEVICE MARKING
BAS21LT1 = JS

Symbol
Characteristic
Min
Max
1.0
100
250
1000
1250
Unit
OFF CHARACTERISTICS
(VR = 200 Vdc)
(VR = 200 Vdc, TJ = 150C)
Adc
IR

(IBR = 100 Adc)
V(BR)
Vdc
Forward Voltage
(IF = 100 mAdc)
(IF = 200 mAdc)
VF
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD
5.0
pF

(IF = IR = 30 mAdc, RL = 100 )
trr
50
ns
mV
0.062 in.
0.024 in. 99.5% alumina.
1. FR 5 = 1.0
0.75
2. Alumina = 0.4
0.3
516
BAS21LT1
820
+10 V
2.0 k
100 H
tp
tr
0.1 F
IF
IF
trr
10%
0.1 F
90%
D.U.T.
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
iR(REC) = 3.0 mA
IR
VR
INPUT SIGNAL
OUTPUT PULSE
Notes: 3. tp trr
517
MOTOROLA
BAS40LT1
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching applications,
circuit protection, and voltage clamping. Extremely low forward voltage reduces
conduction loss. Miniature surface mount package is excellent for hand held and
portable applications where space is limited.
40 VOLTS
SCHOTTKY BARRIER DIODES
3
CATHODE
1
ANODE
3
1
2

SOT 23 (TO 236AB)

Rating
Symbol
Value
Unit
Reverse Voltage
VR
40
Volts
Forward Power Dissipation

@ TA = 25C
Derate above 25C
PF
225
1.8
mW
mW/C
55 to +150
Operating Junction and Storage Temperature Range
TJ, Tstg
DEVICE MARKING
BAS40LT1 = B1

Characteristic
Symbol
Min
Max
Unit

(IR = 10 A)
V(BR)R
40
Volts
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
CT
5.0
pF
Reverse Leakage
(VR = 25 V)
IR
1.0
Adc
Forward Voltage
(IF = 0.1 mAdc)
VF
380
mVdc
Forward Voltage
(IF = 30 mAdc)
VF
500
mVdc
Forward Voltage
(IF = 100 mAdc)
VF
1.0
Vdc
518
MOTOROLA
BAS40-04LT1
Common Anode
Schottky Barrier Diode
40 VOLTS
Extremely Fast Switching Speed

Low Forward Voltage 0.50 Volts (Typ) @ IF = 10 mAdc
CATHODE
1
ANODE
3
2
CATHODE
1
2

SOT 23 (TO 236AB)

Rating
Symbol
Value
Unit
Reverse Voltage
VR
40
Volts

@ TA = 25C
Derate above 25C
PF
225
1.8
mW
mW/C
55 to +150
TJ, Tstg

Symbol
Min
Max
Unit
V(BR)R
40
Volts
Total Capacitance (VR = 1.0 V, f = 1.0 MHz)
CT
5.0
pF
Reverse Leakage (VR = 25 V)
IR
1.0
Adc
Forward Voltage (IF = 0.1 mAdc)
VF
380
mVdc
Forward Voltage (IF = 30 mAdc)
VF
500
mVdc
VF
1.0
Vdc
Characteristic
Reverse Breakdown Voltage (IR = 10 A)
519
MOTOROLA
BAS40-06LT1
Dual Series Schottky

Barrier Diodes
40 VOLTS

1
ANODE
3
CATHODE/ANODE
2
CATHODE
3
1
2

SOT 23 (TO 236AB)

Symbol
Value
Unit
Reverse Voltage
VR
40
Volts

@ TA = 25C
Derate above 25C
PF
225
1.8
mW
mW/C
55 to +150
Rating
TJ, Tstg

Symbol
Min
Max
Unit
V(BR)R
40
Volts
CT
5.0
pF
IR
1.0
Adc
VF
380
mVdc
VF
500
mVdc
VF
1.0
Vdc
Characteristic
520
MOTOROLA
BAS70LT1
70 VOLTS

3
CATHODE
1
ANODE
3
1
2

SOT 23 (TO 236AB)

Rating
Symbol
Value
Unit
Reverse Voltage
VR
70
Volts

@ TA = 25C
Derate above 25C
PF
225
1.8
mW
mW/C
55 to +150
TJ, Tstg
DEVICE MARKING
BAS70LT1 = BE

Symbol
Min
Max
Unit
V(BR)R
70
Volts
Total Capacitance (VR = 0 V, f = 1.0 MHz)
CT
2.0
pF

(VR = 70 V)
IR
0.1
10
Adc
VF
410
mVdc
VF
750
mVdc
VF
1.0
Vdc
Characteristic
521
MOTOROLA
BAS70-04LT1
Common Anode
70 VOLTS

CATHODE
1
ANODE
3
2
CATHODE
1
2

SOT 23 (TO 236AB)

Rating
Symbol
Value
Unit
Reverse Voltage
VR
70
Volts

@ TA = 25C
Derate above 25C
PF
225
1.8
mW
mW/C
55 to +150
TJ, Tstg

Symbol
Min
Max
Unit
V(BR)R
70
Volts
Total Capacitance (VR = 0 V, f = 1.0 MHz)
CT
2.0
pF

(VR = 70 V)
IR
0.1
10
Adc
VF
410
mVdc
VF
750
mVdc
VF
1.0
Vdc
Characteristic
522
MOTOROLA
BAS116LT1
Switching Diode
Low Leakage Current Applications

Medium Speed Switching Times
Use BAS116LT1 to order the 7 inch/3,000 unit reel
Use BAS116LT3 to order the 13 inch/10,000 unit reel
3
1
2
1
ANODE
3
CATHODE

SOT 23 (TO 236AB)
MAXIMUM RATINGS
Symbol
Value
Unit
Rating
VR
75
Vdc
IF
200
mAdc
IFM(surge)
500
mAdc
Characteristic
Symbol
Max
Unit

TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
RqJA
556
C/W
PD
300
mW
2.4
mW/C
RqJA
417
C/W
TJ, Tstg
55 to +150

Alumina Substrate(2) TA = 25C
Derate above 25C
DEVICE MARKING
BAS116LT1 = JV

Characteristic
Symbol
Min
Max
Unit
V(BR)
75
Vdc
Reverse Voltage Leakage Current (VR = 75 Vdc)

Reverse Voltage Leakage Current (VR = 75 Vdc, TJ = 150C)
IR
5.0
80
nAdc

VF
900
1000
1100
1250
mV
CD
2.0
pF
Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1)
trr
3.0
OFF CHARACTERISTICS
Reverse Breakdown Voltage (IBR = 100 Adc)
0.062 in.
0.024 in. 99.5% alumina.
1. FR 5 = 1.0
0.75
2. Alumina = 0.4
0.3
REV 1
523
BAS116LT1
820
+10 V
2.0 k
100 H
tp
tr
0.1 F
IF
IF
trr
10%
0.1 F
90%
DUT
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
iR(REC) = 1.0 mA
IR
VR
INPUT SIGNAL
OUTPUT PULSE
Notes: 3. tp trr
524
MOTOROLA
BAT54ALT1
30 VOLTS
SCHOTTKY BARRIER
DETECTOR AND SWITCHING
DIODES

CATHODE
1
ANODE
3
2
CATHODE
3
1
2

SOT 23 (TO 236AB)

Rating
Symbol
Value
Unit
Reverse Voltage
VR
30
Volts

@ TA = 25C
Derate above 25C
PF
225
1.8
mW
mW/C
Operating Junction
Temperature Range
TJ
C
55 to +150
Tstg
55 to +150
DEVICE MARKING
BAT54ALT1 = B6
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (EACH DIODE)

Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)R
30
Volts
CT
7.6
10
pF
IR
0.5
2.0
Adc
VF
0.22
0.24
Vdc
VF
0.41
0.5
Vdc
VF
0.52
1.0
Vdc

(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1
trr
5.0
ns
VF
0.29
0.32
Vdc
VF
0.35
0.40
Vdc
REV 1
525
BAT54ALT1
820
+10 V
2k
0.1 F
tr
IF
100 H
tp
0.1 F
IF
trr
10%
DUT
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
90%
IR
VR
iR(REC) = 1 mA
OUTPUT PULSE
at iR(REC) = 1 mA)
INPUT SIGNAL
Notes: 3. tp trr
100
1000
TA = 150C
1 50C
10
1 25C
1.0
85C
25C
0.1
0.0
40C
100
TA = 125C
10
1.0
TA = 85C
0.1
0.01
55C
TA = 25C
0.001
0.1
0.2
0.3
0.4
0.5
0.6
10
15
20
25
30
C T , TOTAL CAPACITANCE (pF)
14
12
10
8
6
4
2
0
10
15
20
25
30
Figure 4. Total Capacitance
526
MOTOROLA
BAT54LT1
30 VOLTS
SILICON HOTCARRIER
DIODES

3
CATHODE
1
ANODE
3
1
2

SOT 23 (TO 236AB)

Rating
Symbol
Value
Unit
Reverse Voltage
VR
30
Volts

@ TA = 25C
Derate above 25C
PF
200
2.0
mW
mW/C
Operating Junction
Temperature Range
TJ
C
55 to +125
Tstg
55 to +150
DEVICE MARKING
BAT54LT1 = LV3

Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)R
30
Volts
CT
7.6
10
pF
IR
0.5
2.0
Adc
VF
0.22
0.24
Vdc
VF
0.41
0.5
Vdc
VF
0.52
1.0
Vdc

trr
5.0
ns
VF
0.29
0.32
Vdc
VF
0.35
0.40
Vdc
REV 2
527
BAT54LT1
820
+10 V
2k
0.1 F
tr
IF
100 H
tp
0.1 F
IF
trr
10%
DUT
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
90%
IR
VR
iR(REC) = 1 mA
OUTPUT PULSE
at iR(REC) = 1 mA)
INPUT SIGNAL
Notes: 3. tp trr

100
1000
TA = 150C
1 50C
10
1 25C
1.0
85C
25C
0.1
0.0
40C
100
TA = 125C
10
1.0
TA = 85C
0.1
0.01
55C
TA = 25C
0.001
0.1
0.2
0.3
0.4
0.5
0.6
10
15
20
25
30
14
12
10
8
6
4
2
0
10
15
20
25
30
528
MOTOROLA

Barrier Diodes
BAT54SLT1
30 VOLTS
DUAL HOTCARRIER
DIODES

1
ANODE
2
CATHODE
3
CATHODE/ANODE
1
2

SOT 23 (TO 236AB)

Symbol
Value
Unit
Reverse Voltage
VR
30
Volts

@ TA = 25C
Derate above 25C
PF
225
1.8
mW
mW/C
Operating Junction
Temperature Range
TJ
Rating
C
55 to +125
Tstg
55 to +150
DEVICE MARKING
BAT54S = LD3

Symbol
Min
Typ
Max
Unit
V(BR)R
30
Volts
CT
7.6
10
pF
IR
0.5
2.0
Adc
VF
0.22
0.24
Vdc
VF
0.41
0.5
Vdc
VF
0.52
1.0
Vdc

trr
5.0
ns
VF
0.29
0.32
Vdc
VF
0.35
0.40
Vdc
Characteristic
REV 2
529
BAT54SLT1
820
+10 V
2k
0.1 F
tr
IF
100 H
tp
0.1 F
IF
trr
10%
DUT
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
90%
IR
VR
iR(REC) = 1 mA
OUTPUT PULSE
at iR(REC) = 1 mA)
INPUT SIGNAL
Notes: 3. tp trr

100
1000
TA = 150C
1 50C
10
1 25C
1.0
85C
25C
0.1
0.0
40C
100
TA = 125C
10
1.0
TA = 85C
0.1
0.01
55C
TA = 25C
0.001
0.1
0.2
0.3
0.4
0.5
0.6
10
15
20
25
30
14
12
10
8
6
4
2
0
10
15
20
25
30
530
MOTOROLA

Barrier Diodes
BAT54SWT1
30 VOLT
DUAL SERIES
SCHOTTKY BARRIER
DIODES

1
ANODE
2
CATHODE
3
CATHODE/ANODE
1
2

SOT 323 (SC 70)

Symbol
Value
Unit
Reverse Voltage
VR
30
Volts

@ TA = 25C
Derate above 25C
PF
200
1.6
mW
mW/C
Operating Junction
Temperature Range
TJ
Rating
C
55 to +150
Tstg
55 to +150
DEVICE MARKING
BAT54SWT1 = B8

Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)R
30
Volts
CT
7.6
10
pF
IR
0.5
2.0
Adc
VF
0.22
0.24
Vdc
VF
0.41
0.5
Vdc
VF
0.52
1.0
Vdc

trr
5.0
ns
VF
0.29
0.32
Vdc
VF
0.35
0.40
Vdc
REV 1
531
BAT54SWT1
820
+10 V
2k
0.1 F
tr
IF
100 H
tp
0.1 F
IF
trr
10%
DUT
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
90%
IR
VR
iR(REC) = 1 mA
OUTPUT PULSE
at iR(REC) = 1 mA)
INPUT SIGNAL
Notes: 3. tp trr
100
1000
TA = 150C
1 50C
10
1 25C
1.0
85C
25C
0.1
0.0
40C
100
TA = 125C
10
1.0
TA = 85C
0.1
0.01
55C
TA = 25C
0.001
0.1
0.2
0.3
0.4
0.5
0.6
10
15
20
25
30
14
12
10
8
6
4
2
0
10
15
20
25
30
532
MOTOROLA
BAT54T1
30 VOLT
SCHOTTKY BARRIER
DIODE

1
Cathode
2
Anode
2
1

SOD 123

Rating
Symbol
Value
Unit
Reverse Voltage
VR
30
Volts

@ TA = 25C
Derate above 25C
PF
400
3.2
mW
mW/C
Operating Junction
Temperature Range
TJ
C
55 to +150
Tstg
55 to +150
DEVICE MARKING
BAT54T1 = BU

Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)R
30
Volts
CT
7.6
10
pF
IR
0.5
2.0
Adc
VF
0.22
0.24
Vdc
VF
0.41
0.5
Vdc
VF
0.52
1.0
Vdc

trr
5.0
ns
VF
0.29
0.32
Vdc
VF
0.35
0.40
Vdc
REV 1
533
BAT54T1
820
+10 V
2k
0.1 F
tr
IF
100 H
tp
0.1 F
IF
trr
10%
DUT
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
90%
IR
VR
iR(REC) = 1 mA
OUTPUT PULSE
at iR(REC) = 1 mA)
INPUT SIGNAL
Notes: 3. tp trr

100
1000
TA = 150C
1 50C
10
1 25C
1.0
85C
25C
0.1
0.0
40C
100
TA = 125C
10
1.0
TA = 85C
0.1
0.01
55C
TA = 25C
0.001
0.1
0.2
0.3
0.4
0.5
0.6
10
15
20
25
30
14
12
10
8
6
4
2
0
10
15
20
25
30
534
MOTOROLA
BAT54WT1
30 VOLTS
SCHOTTKY BARRIER
DIODE
Extremely Low Forward Voltage 0.35 Volts (Typ) @ IF = 10 mAdc
3
CATHODE
1
ANODE
1
2

SOT 323 (SC 70)

Rating
Symbol
Value
Unit
Reverse Voltage
VR
30
Volts

@ TA = 25C
Derate above 25C
PF
200
1.6
mW
mW/C
Operating Junction
Temperature Range
TJ
C
55 to +150
Tstg
55 to +150
DEVICE MARKING
BAT54WT1 = B4

Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)R
30
Volts
CT
7.6
10
pF
IR
0.5
2.0
Adc
VF
0.22
0.24
Vdc
VF
0.41
0.5
Vdc
VF
0.52
1.0
Vdc

trr
5.0
ns
VF
0.29
0.32
Vdc
VF
0.35
0.40
Vdc
REV 1
535
BAT54WT1
820
+10 V
2k
0.1 F
tr
IF
100 H
tp
0.1 F
IF
trr
10%
DUT
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
90%
IR
VR
iR(REC) = 1 mA
OUTPUT PULSE
at iR(REC) = 1 mA)
INPUT SIGNAL
Notes: 3. tp trr
100
1000
TA = 150C
1 50C
10
1 25C
1.0
85C
25C
0.1
0.0
40C
100
TA = 125C
10
1.0
TA = 85C
0.1
0.01
55C
TA = 25C
0.001
0.1
0.2
0.3
0.4
0.5
0.6
10
15
20
25
30
14
12
10
8
6
4
2
0
10
15
20
25
30
536
MOTOROLA
Monolithic Dual Switching Diode

Common Cathode
BAV70LT1
ANODE
1
3
CATHODE
2
ANODE
3
1
MAXIMUM RATINGS (EACH DIODE)

Symbol
Value
Unit
Reverse Voltage
VR
70
Vdc
Forward Current
IF
200
mAdc
IFM(surge)
500
mAdc
Symbol
Max
Unit

TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
RqJA
556
C/W
PD
300
mW
2.4
mW/C
RqJA
417
C/W
TJ, Tstg
55 to +150
Rating

SOT 23 (TO 236AB)
Characteristic

Derate above 25C
DEVICE MARKING
BAV70LT1 = A4

Characteristic
Symbol
Min
Max
Unit
V(BR)
70
Vdc
60
2.5
100
1.5
715
855
1000
1250
6.0
OFF CHARACTERISTICS
(I(BR) = 100 Adc)
(VR = 25 Vdc, TJ = 150C)
(VR = 70 Vdc)
(VR = 70 Vdc, TJ = 150C)
IR
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
VF

RL = 100
(IF = IR = 10 mAdc, VR = 5.0 Vdc, IR(REC) = 1.0 mAdc) (Figure 1)
trr
Adc
pF
mVdc
ns
0.062 in.
0.024 in. 99.5% alumina.
1. FR 5 = 1.0
0.75
2. Alumina = 0.4
0.3
537
BAV70LT1
820
+10 V
2.0 k
100 H
tp
tr
0.1 F
IF
IF
trr
10%
0.1 F
90%
D.U.T.
50 INPUT
SAMPLING
OSCILLOSCOPE
50 OUTPUT
PULSE
GENERATOR
iR(REC) = 1.0 mA
IR
VR
OUTPUT PULSE
INPUT SIGNAL
Notes: 3. tp trr
Curves Applicable to Each Anode

10
100
TA = 150C
TA = 85C
10
TA = 40C
1.0
TA = 25C
TA = 125C
1.0
TA = 85C
0.1
TA = 55C
0.01
TA = 25C
0.001
0.1
0.2
0.4
0.6
0.8
1.0
10
1.2
20
30
40
50
1.0
0.9
0.8
0.7
0.6
538
MOTOROLA
BAV70WT1
Dual Switching Diode

ANODE
1
3
CATHODE
2
3

Rating
Symbol
Max
Unit
Reverse Voltage
VR
70
Vdc
Forward Current
IF
200
mAdc
IFM(surge)
500
mAdc
Symbol
Max
Unit

TA = 25C
Derate above 25C
PD
200
mW
1.6
mW/C
RqJA
0.625
C/W
PD
300
mW
2.4
mW/C
RqJA
417
C/W
TJ, Tstg
55 to +150
1
2
CASE 41902, STYLE 5

SC70/SOT323
Characteristic

Derate above 25C
DEVICE MARKING
BAV70WT1 = A4

Symbol
Min
Max
Unit
V(BR)
70
Vdc
IR1
IR2
5.0
100
Adc
nAdc
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD
1.5
pF
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
VF
715
855
1000
1250

(IF = IR = 10 mAdc, RL = 100 , IR(REC) = 1.0 mAdc) (Figure 1)
trr
6.0
ns
VRF
1.75
Characteristic
OFF CHARACTERISTICS
(I(BR) = 100 Adc)
(VR = 70 Vdc)
(VR = 50 Vdc)

(IF = 10 mAdc, tr = 20 ns) (Figure 2)
mVdc
0.062 in.
0.024 in. 99.5% alumina.
1. FR 5 = 1.0
0.75
2. Alumina = 0.4
0.3
539
BAV70WT1
BAV70
RS = 50
SAMPLING
OSCILLOSCOPE
RL = 50
IF
tr
tp
I
10%
+IF
trr
10% OF
90%
VR
OUTPUT PULSE
VR
100
INPUT PULSE
450
1 K
RS = 50
SAMPLING
OSCILLOSCOPE
RL = 50
BAV70
I
V
90%
VFR
10%
t
tr
540
tp
INPUT PULSE
Figure 2.
OUTPUT PULSE
BAV70WT1
10
100
TA = 150C
10
TA = 85C
TA = 25C
1.0
TA = 40C
TA = 125C
1.0
TA = 85C
0.1
TA = 55C
0.01
TA = 25C
0.001
0.1
0.2
0.4
0.6
0.8
1.0
1.2
10
20
30
40
50
1.0
0.9
0.8
0.7
0.6
541
MOTOROLA
Monolithic Dual
Switching Diode
BAV74LT1
ANODE
1
3
CATHODE
2
ANODE
3
1

Symbol
Value
Unit
Reverse Voltage
VR
50
Vdc
Forward Current
IF
200
mAdc
IFM(surge)
500
mAdc
Symbol
Max
Unit

TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
RqJA
556
C/W
PD
300
mW
2.4
mW/C
RqJA
417
C/W
TJ, Tstg
55 to +150
Rating

SOT 23 (TO 236AB)
Characteristic

Derate above 25C
DEVICE MARKING
BAV74LT1 = JA

Characteristic
Symbol
Min
Max
Unit
V(BR)
50
Vdc
100
0.1
OFF CHARACTERISTICS
(I(BR) = 5.0 Adc)
Adc

(VR = 50 Vdc, TJ = 125C)
(VR = 50 Vdc)
IR
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD
2.0
pF
Forward Voltage
(IF = 100 mAdc)
VF
1.0
Vdc

(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, measured at IR = 1.0 mA, RL = 100 )
trr
4.0
ns
0.062 in.
0.024 in. 99.5% alumina.
1. FR 5 = 1.0
0.75
2. Alumina = 0.4
0.3
542
BAV74LT1
10
100
TA = 150C
TA = 85C
10
TA = 40C
1.0
TA = 25C
TA = 125C
1.0
TA = 85C
0.1
TA = 55C
0.01
TA = 25C
0.001
0.1
0.2
0.4
0.6
0.8
1.0
10
1.2
20
30
40
50
1.0
0.9
0.8
0.7
0.6
543
MOTOROLA
Dual Series Switching Diode
BAV99LT1
ANODE
1
CATHODE
2
3
CATHODE/ANODE
3
1
2

SOT 23 (TO 236AB)

Rating
Symbol
Value
Unit
Reverse Voltage
VR
70
Vdc
Forward Current
IF
215
mAdc
IFM(surge)
500
mAdc
Repetitive Peak Reverse Voltage
VRRM
70
Average Rectified Forward Current(1)

(averaged over any 20 ms period)
IF(AV)
715
mA
Repetitive Peak Forward Current
IFRM
450
mA
NonRepetitive Peak Forward Current

t = 1.0 ms
t = 1.0 ms
t = 1.0 S
IFSM
A
2.0
1.0
0.5
Characteristic
Symbol
Max
Unit
PD
225
mW
1.8
mW/C
RqJA
556
C/W
PD
300
mW
2.4
mW/C
RqJA
417
C/W
TJ, Tstg
65 to +150

FR5 Board,(1) TA = 25C
Derate above 25C
Derate above 25C
DEVICE MARKING
BAV99LT1 = A7
1. FR5 = 1.0 x 0.75 x 0.062 in.
544
BAV99LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) (EACH DIODE)
Characteristic
Symbol
Min
Max
Unit
V(BR)
70
Vdc

(VR = 25 Vdc, TJ = 150C)
(VR = 70 Vdc, TJ = 150C)
IR
2.5
30
50
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD
1.5
pF
Forward Voltage
VF
715
855
1000
1250
mVdc
trr
6.0
ns
VFR
1.75
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100 A)
(IF = 1.0 mAdc)

(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
Reverse Recovery Time (IF = IR = 10 mAdc, iR(REC) = 1.0 mAdc) (Figure 1) RL = 100
Forward Recovery Voltage (IF = 10 mA, tr = 20 ns)
mAdc
820
+10 V
2k
100 H
0.1 F
tr
IF
0.1 F
tp
IF
trr
10%
DUT
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
90%
IR
VR
INPUT SIGNAL
iR(REC) = 1 mA
OUTPUT PULSE
at iR(REC) = 1 mA)
Notes: 3. tp trr
545
BAV99LT1
CURVES APPLICABLE TO EACH DIODE
100
10
TA = 150C
10
TA = 85C
TA = 25C
1.0
TA = 125C
1.0
TA = 85C
0.1
TA = 55C
0.01
TA = 40C
TA = 25C
0.1
0.2
0.4
0.6
0.8
1.0
0.001
1.2
10
20
30
40
50
0.68
0.64
0.60
0.56
0.52
546
MOTOROLA
BAV99WT1
BAV99RWT1
SC-70/SOT-323 Dual Series

Switching Diode
The BAV99WT1 is a smaller package, equivalent to the BAV99LT1.

Suggested Applications
ESD Protection
Polarity Reversal Protection
Data Line Protection
Inductive Load Protection
Steering Logic
ANODE
1
3
CATHODE/ANODE

Symbol
Value
Unit
Reverse Voltage
VR
70
Vdc
Forward Current
IF
215
mAdc
IFM(surge)
500
mAdc
VRRM
70
Average Rectified Forward Current(1)

(averaged over any 20 ms period)
IF(AV)
715
mA
IFRM
450
mA
NonRepetitive Peak Forward Current

t = 1.0 ms
t = 1.0 ms
t = 1.0 S
IFSM
Rating
CATHODE
2
BAV99WT1
CASE 41902, STYLE 9
SC70/SOT323
CATHODE
1
ANODE
2
3
CATHODE/ANODE
BAV99RWT1
CASE 41902, STYLE 10
SC70/SOT323
2.0
1.0
0.5
DEVICE MARKING
BAV99WT1 = A7
BAV99RWT1 = F7
Characteristic
FR5 Board,(1) TA = 25C
Derate above 25C
Derate above 25C

Symbol
Max
Unit
PD
200
mW
1.6
mW/C
RqJA
625
C/W
PD
300
mW
2.4
mW/C
RqJA
417
C/W
TJ, Tstg
65 to +150
1. FR5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
547
BAV99WT1 BAV99RWT1
Characteristic
Symbol
Min
Max
Unit
V(BR)
70
Vdc

(VR = 25 Vdc, TJ = 150C)
(VR = 70 Vdc, TJ = 150C)
IR
2.5
30
50
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD
1.5
pF
Forward Voltage
VF
715
855
1000
1250
mVdc
trr
6.0
ns
VFR
1.75
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100 A)
(IF = 1.0 mAdc)

(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
Reverse Recovery Time (IF = IR = 10 mAdc, iR(REC) = 1.0 mAdc) (Figure 1) RL = 100
Forward Recovery Voltage (IF = 10 mA, tr = 20 ns)
mAdc
820
+10 V
2k
100 H
0.1 F
tr
IF
0.1 F
tp
IF
trr
10%
DUT
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
90%
IR
VR
INPUT SIGNAL
iR(REC) = 1 mA
OUTPUT PULSE
at iR(REC) = 1 mA)
Notes: 3. tp trr
548
BAV99WT1 BAV99RWT1
100
10
TA = 150C
10
TA = 85C
TA = 25C
1.0
TA = 125C
1.0
TA = 85C
0.1
TA = 55C
0.01
TA = 40C
TA = 25C
0.1
0.2
0.4
0.6
0.8
1.0
0.001
1.2
10
20
30
40
50
0.68
0.64
0.60
0.56
0.52
549
MOTOROLA

BAV170LT1

Use BAV170LT1 to order the 7 inch/3,000 unit reel
3
1
ANODE
1
3
CATHODE
2
ANODE

SOT 23 (TO 236AB)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VR
70
Vdc
Reverse Voltage
Forward Current
IF
200
mAdc
IFM(surge)
500
mAdc
Characteristic
Symbol
Max
Unit

TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
RqJA
556
C/W
PD
300
mW
2.4
mW/C
RqJA
417
C/W
TJ, Tstg
55 to +150

Derate above 25C
DEVICE MARKING
BAV170LT1 = JX

Characteristic
Symbol
Min
Max
Unit
V(BR)
70
Vdc

IR
5.0
80
nAdc
CD
2.0
pF

VF
900
1000
1100
1250
mVdc
trr
3.0
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100 Adc)

(IF = IR = 10 mAdc) (Figure 1)
RL = 100
0.062 in.
0.024 in. 99.5% alumina.
1. FR 5 = 1.0
0.75
2. Alumina = 0.4
0.3
REV 1
550
BAV170LT1
820
+10 V
2.0 k
100 H
tp
tr
0.1 F
IF
IF
trr
10%
0.1 F
90%
DUT
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
iR(REC) = 1.0 mA
IR
VR
INPUT SIGNAL
OUTPUT PULSE
Notes: 3. tp trr
551
MOTOROLA
Dual Series Switching Diode
BAV199LT1


ANODE
1
CATHODE
2
3
CATHODE/ANODE

SOT 23 (TO 236AB)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
70
Vdc
Forward Current
IF
215
mAdc
IFM(surge)
500
mAdc

VRRM
70
Vdc
Average Rectified Forward Current(1) (averaged over any 20 ms period)
IF(AV)
715
mAdc
IFRM
450
mAdc
NonRepetitive Peak Forward Current t = 1.0 s

t = 1.0 ms
t = 1.0 A
IFSM
2.0
1.0
0.5
Adc
Symbol
Max
Unit
PD
225
1.8
mW
mW/C
RqJA
556
C/W
PD
300
mW
2.4
mW/C
RqJA
417
C/W
TJ, Tstg
65 to +150
Characteristic
Total Device Dissipation FR 5 Board(1) TA = 25C
Derate above 25C
Derate above 25C
DEVICE MARKING
BAV199LT1 = JY
0.062 in.
0.024 in. 99.5% alumina.
1. FR 5 = 1.0
0.75
2. Alumina = 0.4
0.3
REV 1
552
BAV199LT1
Characteristic
Symbol
Min
Max
Unit
V(BR)
70
Vdc
5.0
80
2.0
900
1000
1100
1250
3.0
OFF CHARACTERISTICS
(I(BR) = 100 Adc)
(VR = 70 Vdc)
(VR = 70 Vdc, TJ = 150C)
IR
Diode Capacitance
(VR = 0 V, f = 1.0 MHz)
CD
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
VF

trr
nAdc
pF
mVdc
820
+10 V
2.0 k
100 H
tp
tr
0.1 F
IF
IF
trr
10%
0.1 F
90%
DUT
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
iR(REC) = 1.0 mA
IR
VR
INPUT SIGNAL
OUTPUT PULSE
Notes: 3. tp trr
553
MOTOROLA

Common Anode
ANODE
3
BAW56LT1
CATHODE
1
2
CATHODE
3
1

Symbol
Value
Unit
Reverse Voltage
VR
70
Vdc
Forward Current
IF
200
mAdc
IFM(surge)
500
mAdc
Symbol
Max
Unit

TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
RqJA
556
C/W
PD
300
mW
2.4
mW/C
RqJA
417
C/W
TJ, Tstg
55 to +150
Rating

SOT 23 (TO 236AB)
Characteristic

Derate above 25C
DEVICE MARKING
BAW56LT1 = A1

Characteristic
Symbol
Min
Max
Unit
V(BR)
70
Vdc
30
2.5
50
2.0
715
855
1000
1250
6.0
OFF CHARACTERISTICS
(I(BR) = 100 Adc)
(VR = 25 Vdc, TJ = 150C)
(VR = 70 Vdc)
(VR = 70 Vdc, TJ = 150C)
IR
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
VF

(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1) RL = 100
trr
Adc
pF
mVdc
ns
0.062 in.
0.024 in. 99.5% alumina.
1. FR 5 = 1.0
0.75
2. Alumina = 0.4
0.3
554
BAW56LT1
820
+10 V
2.0 k
100 H
tp
tr
0.1 F
IF
IF
trr
10%
0.1 F
90%
D.U.T.
50 INPUT
SAMPLING
OSCILLOSCOPE
50 OUTPUT
PULSE
GENERATOR
iR(REC) = 1.0 mA
IR
VR
OUTPUT PULSE
INPUT SIGNAL
Notes: 3. tp trr
Curves Applicable to Each Cathode

10
100
TA = 150C
TA = 85C
10
TA = 40C
1.0
TA = 25C
TA = 125C
1.0
TA = 85C
0.1
TA = 55C
0.01
TA = 25C
0.001
0.1
0.2
0.4
0.6
0.8
1.0
10
1.2
20
30
40
50
1.75
1.5
1.25
1.0
0.75
555
MOTOROLA
BAW56WT1
CATHODE
1
3
ANODE
2
3

Symbol
Max
Unit
Reverse Voltage
VR
70
Vdc
Forward Current
IF
200
mAdc
IFM(surge)
500
mAdc
Symbol
Max
Unit

TA = 25C
Derate above 25C
PD
200
mW
1.6
mW/C
RqJA
0.625
C/W
PD
300
mW
2.4
mW/C
RqJA
417
C/W
TJ, Tstg
55 to +150
Rating
1
2
CASE 41902, STYLE 4

SC70/SOT323
Characteristic

Derate above 25C
DEVICE MARKING
BAW56WT1 = A1

Characteristic
Symbol
Min
Max
Unit
V(BR)
70
Vdc
30
2.5
50
2.0
715
855
1000
1250
6.0
OFF CHARACTERISTICS
(I(BR) = 100 Adc)
(VR = 25 Vdc, TJ = 150C)
(VR = 70 Vdc)
(VR = 70 Vdc, TJ = 150C)
IR
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 60 mAdc)
(IF = 150 mAdc)
VF

(IF = IR = 10 mAdc, RL = 100 , IR(REC) = 1.0 mAdc) (Figure 1)
trr
Adc
pF
mVdc
ns
0.062 in.
0.024 in. 99.5% alumina.
1. FR 5 = 1.0
0.75
2. Alumina = 0.4
0.3
556
BAW56WT1
820
+10 V
2.0 k
100 H
tp
tr
0.1 F
IF
IF
trr
10%
0.1 F
90%
DUT
50 INPUT
SAMPLING
OSCILLOSCOPE
50 OUTPUT
PULSE
GENERATOR
iR(REC) = 1.0 mA
IR
VR
OUTPUT PULSE
INPUT SIGNAL
Notes: 3. tp trr
10
100
TA = 150C
10
TA = 85C
TA = 25C
1.0
TA = 125C
1.0
TA = 85C
0.1
TA = 55C
0.01
TA = 40C
TA = 25C
0.001
0.1
0.2
0.4
0.6
0.8
1.0
10
1.2
20
30
40
50
1.75
1.5
1.25
1.0
0.75
557
MOTOROLA

BAW156LT1

Use BAW156LT1 to order the 7 inch/3,000 unit reel
Use BAW156LT3 to order the 13 inch/10,000 unit reel
3
1
CATHODE
1
ANODE
3
2
CATHODE

SOT 23 (TO 236AB)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VR
70
Vdc
Reverse Voltage
Forward Current
IF
200
mAdc
IFM(surge)
500
mAdc
Symbol
Max
Unit

TA = 25C
Derate above 25C
Characteristic
PD
225
mW
1.8
mW/C
RqJA
556
C/W
PD
300
mW
2.4
mW/C
RqJA
417
C/W
TJ, Tstg
55 to +150

Derate above 25C
DEVICE MARKING
BAW156LT1 = JZ

Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
V(BR)
70
Vdc

IR
5.0
80
nAdc
CD
2.0
pF

VF
900
1000
1100
1250
mVdc
trr
3.0
0.062 in.
0.024 in. 99.5% alumina.
1. FR 5 = 1.0
0.75
2. Alumina = 0.4
0.3
REV 1
558
BAW156LT1
820
+10 V
2.0 k
100 H
tp
tr
0.1 F
IF
IF
trr
10%
0.1 F
90%
DUT
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
iR(REC) = 1.0 mA
IR
VR
INPUT SIGNAL
OUTPUT PULSE
Notes: 3. tp trr
559
MOTOROLA
Common Cathode Silicon

DAN222
This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in
ultra high speed switching applications. This device is housed in the SOT416/SC90
package which is designed for low power surface mount applications, where board
Fast trr
SOT416/SC90 PACKAGE
COMMON CATHODE
DUAL SWITCHING DIODE
SURFACE MOUNT
Low CD
3
2
1
CASE 46301, STYLE 4

SOT416/SC90

Rating
Reverse Voltage
Peak Reverse Voltage
Forward Current
Symbol
Value
Unit
VR
80
Vdc
VRM
80
Vdc
IF
100
mAdc
IFM
300
mAdc
IFSM(1)
2.0
Adc
CATHODE
3
DEVICE MARKING
2
ANODE
DAN222 = N9
Rating
Symbol
Max
Unit
Power Dissipation
PD
150
mW
TJ
150
Storage Temperature
Tstg
55 ~ + 150

Characteristic
Symbol
Condition
Min
Max
Unit
IR
VR = 70 V
0.1
Adc
Forward Voltage
VF
IF = 100 mA
1.2
Vdc
VR
IR = 100 A
80
Vdc
CD
VR = 6.0 V, f = 1.0 MHz
3.5
pF
trr(2)
IF = 5.0 mA, VR = 6.0 V, RL = 100 , Irr = 0.1 IR
4.0
ns
Diode Capacitance
1. t = 1 S
2. trr Test Circuit on following page.
REV 1
560
DAN222
10
100
TA = 150C
TA = 85C
10
TA = 40C
1.0
TA = 25C
TA = 125C
1.0
TA = 85C
0.1
TA = 55C
0.01
TA = 25C
0.001
0.1
0.2
0.4
0.6
0.8
1.0
10
1.2
50
20
30
40
Figure 2. Reverse Current
1.0
0.9
0.8
0.7
0.6
RECOVERY TIME EQUIVALENT TEST CIRCUIT
INPUT PULSE
tr
OUTPUT PULSE
tp
trr
IF
10%
RL
Irr = 0.1 IR
90%
VR
tp = 2 s
tr = 0.35 ns
IF = 5.0 mA
VR = 6 V
RL = 100
561
MOTOROLA
Common Anode Silicon

DAP222
This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra
high speed switching applications. This device is housed in the SOT416/SC90
package which is designed for low power surface mount applications, where board
Fast trr
SOT416/SC90 PACKAGE
COMMON ANODE
SURFACE MOUNT
Low CD
3
2
1
CASE 46301, STYLE 4

SOT416/SC90

Rating
Reverse Voltage
Forward Current
Symbol
Value
Unit
VR
80
Vdc
VRM
80
Vdc
IF
100
mAdc
IFM
300
mAdc
IFSM(1)
2.0
Adc
ANODE
3
DEVICE MARKING
2
CATHODE
DAP222 = P9
Rating
Symbol
Max
Unit
Power Dissipation
PD
150
mW
TJ
150
Storage Temperature
Tstg
55 ~ + 150

Characteristic
Symbol
Condition
Min
Max
Unit
IR
VR = 70 V
0.1
Adc
Forward Voltage
VF
IF = 100 mA
1.2
Vdc
VR
IR = 100 A
80
Vdc
CD
VR = 6.0 V, f = 1.0 MHz
3.5
pF
trr(2)
IF = 5.0 mA, VR = 6.0 V, RL = 100 , Irr = 0.1 IR
4.0
ns
Diode Capacitance
1. t = 1 S
2. trr Test Circuit on following page.
REV 1
562
DAP222
10
100
TA = 150C
TA = 85C
10
TA = 40C
1.0
TA = 25C
TA = 125C
1.0
TA = 85C
0.1
TA = 55C
0.01
TA = 25C
0.001
0.1
0.2
0.4
0.6
0.8
1.0
10
1.2
50
20
30
40
1.75
1.5
1.25
1.0
0.75
INPUT PULSE
tr
OUTPUT PULSE
tp
trr
IF
10%
RL
Irr = 0.1 IR
90%
VR
tp = 2 s
tr = 0.35 ns
IF = 5.0 mA
VR = 6 V
RL = 100
563
MOTOROLA
Single Silicon Switching Diode

This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching
applications. This device is housed in the SC70 package which is designed for low
power surface mount applications.
M1MA141KT1
M1MA142KT1
Fast trr, < 3.0 ns

Low CD, < 2.0 pF
Use M1MA141/2KT1 to order the 7 inch/3000 unit reel.
Use M1MA141/2KT3 to order the 13 inch/10,000 unit reel.
SC70/SOT323 PACKAGE
SINGLE SILICON
SWITCHING DIODE
40/80 V100 mA
SURFACE MOUNT
CATHODE
3
ANODE NO CONNECTION
1
2
1
2

Rating
Reverse Voltage
Symbol
Value
Unit
VR
40
Vdc
M1MA141KT1
M1MA142KT1
80
VRM
M1MA141KT1
80
Forward Current
Vdc
40
M1MA142KT1
CASE 41902, STYLE 2

SC70/SOT323
IF
100
mAdc
IFM
IFSM(1)
225
mAdc
500
mAdc
Symbol
Max
Unit
PD
150
mW
Rating
Power Dissipation
TJ
150
Storage Temperature
Tstg
55 ~ + 150

Characteristic
M1MA141KT1
Symbol
Condition
Min
Max
Unit
IR
VR = 35 V
0.1
Adc
VR = 75 V
0.1
VF
IF = 100 mA
1.2
Vdc
VR
IR = 100 A
40
Vdc
80
CD
VR = 0, f = 1.0 MHz
2.0
pF
trr(2)
IF = 10 mA, VR = 6.0 V,
RL = 100 , Irr = 0.1 IR
3.0
ns
M1MA142KT1
Forward Voltage
M1MA141KT1
M1MA142KT1
Diode Capacitance
1. t = 1 SEC
2. trr Test Circuit
REV 2
564
M1MA141KT1 M1MA142KT1
INPUT PULSE
tr
OUTPUT PULSE
tp
trr
IF
t
10%
RL
Irr = 0.1 IR
90%
VR
IF = 10 mA
VR = 6 V
RL = 100
tp = 2 s
tr = 0.35 ns
DEVICE MARKING EXAMPLE

Marking Symbol
Type No.
141K
142K
Symbol
MH
MI
MHX
The X represents a smaller alpha digit Date Code. The Date Code
indicates the actual month in which the part was manufactured.
10
100
TA = 150C
TA = 85C
10
TA = 40C
1.0
TA = 25C
TA = 125C
1.0
TA = 85C
0.1
TA = 55C
0.01
TA = 25C
0.001
0.1
0.2
0.4
0.6
0.8
1.0
10
1.2
20
30
40
50
0.68
0.64
0.6
0.56
0.52

565
MOTOROLA

M1MA141WAT1
M1MA142WAT1
This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra
high speed switching applications. This device is housed in the SC70 package which
is designed for low power surface mount applications.
Fast trr, < 10 ns
SC70/SOT323 PACKAGE
COMMON ANODE
40/80 V100 mA
SURFACE MOUNT
Low CD, < 15 pF

Use M1MA141/2WAT1 to order the 7 inch/3000 unit reel.
Use M1MA141/2WAT3 to order the 13 inch/10,000 unit reel.
ANODE
3
CATHODE

Rating
Reverse Voltage
M1MA141WAT1
Symbol
Value
Unit
VR
40
Vdc
M1MA142WAT1
M1MA141WAT1
80
VRM
40
IF
100
M1MA142WAT1
Forward Current
Single
mAdc
150
IFM
Single
mAdc
225
Dual
Vdc
80
Dual
CASE 41902, STYLE 4

SC70/SOT323
340
IFSM(1)
Single
mAdc
500
Dual
750
Rating
Power Dissipation
Symbol
Max
Unit
PD
150
mW
TJ
150
Storage Temperature
Tstg
55 ~ + 150

Characteristic
M1MA141WAT1
Symbol
Condition
Min
Max
Unit
IR
VR = 35 V
0.1
Adc
VR = 75 V
0.1
VF
IF = 100 mA
1.2
Vdc
VR
IR = 100 A
40
Vdc
80
M1MA142WAT1
Forward Voltage
M1MA141WAT1
M1MA142WAT1
Diode Capacitance
CD
VR = 0, f = 1.0 MHz
15
pF
trr(2)
IF = 10 mA, VR = 6.0 V,
RL = 100 , Irr = 0.1 IR
10
ns
1. t = 1 SEC
2. trr Test Circuit
REV 2
566
M1MA141WAT1 M1MA142WAT1
INPUT PULSE
tr
OUTPUT PULSE
tp
trr
IF
t
10%
RL
Irr = 0.1 IR
90%
VR
IF = 10 mA
VR = 6 V
RL = 100
tp = 2 s
tr = 0.35 ns

Marking Symbol
Type No.
141WA
142WA
Symbol
MN
MO
MNX
10
100
TA = 150C
TA = 85C
10
TA = 40C
1.0
TA = 25C
TA = 125C
1.0
TA = 85C
0.1
TA = 55C
0.01
TA = 25C
0.001
0.1
0.2
0.4
0.6
0.8
1.0
10
1.2
20
30
40
50
1.75
1.5
1.25
1.0
0.75

567
MOTOROLA

M1MA141WKT1
M1MA142WKT1
This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in
ultra high speed switching applications. This device is housed in the SC70 package
Fast trr, < 3.0 ns
SC70/SOT323 PACKAGE
COMMON CATHODE
40/80 V100 mA
SURFACE MOUNT
Low CD, < 2.0 pF

Use M1MA141/2WKT1 to order the 7 inch/3000 unit reel.
Use M1MA141/2WKT3 to order the 13 inch/10,000 unit reel.
CATHODE
3
ANODE

Rating
Reverse Voltage
M1MA141WKT1
Symbol
Value
Unit
VR
40
Vdc
M1MA142WKT1
M1MA141WKT1
80
VRM
40
IF
100
M1MA142WKT1
Forward Current
Single
mAdc
150
IFM
Single
mAdc
225
Dual
Vdc
80
Dual
CASE 41902, STYLE 5

SC70/SOT323
340
IFSM(1)
Single
mAdc
500
Dual
750
Rating
Power Dissipation
Symbol
Max
Unit
PD
150
mW
TJ
150
Storage Temperature
Tstg
55 ~ + 150

Characteristic
M1MA141WKT1
Symbol
Condition
Min
Max
Unit
IR
VR = 35 V
0.1
Adc
VR = 75 V
0.1
VF
IF = 100 mA
1.2
Vdc
VR
IR = 100 A
40
Vdc
80
M1MA142WKT1
Forward Voltage
M1MA141WKT1
M1MA142WKT1
Diode Capacitance
CD
VR = 0, f = 1.0 MHz
2.0
pF
trr(2)
IF = 10 mA, VR = 6.0 V,
RL = 100 , Irr = 0.1 IR
3.0
ns
1. t = 1 SEC
2. trr Test Circuit
REV 2
568
M1MA141WKT1 M1MA142WKT1
INPUT PULSE
tr
OUTPUT PULSE
tp
trr
IF
t
10%
RL
Irr = 0.1 IR
90%
VR
IF = 10 mA
VR = 6 V
RL = 100
tp = 2 s
tr = 0.35 ns

Marking Symbol
Type No.
141WK
142WK
Symbol
MT
MU
MTX
10
100
TA = 150C
TA = 85C
10
TA = 40C
1.0
TA = 25C
TA = 125C
1.0
TA = 85C
0.1
TA = 55C
0.01
TA = 25C
0.001
0.1
0.2
0.4
0.6
0.8
1.0
10
1.2
20
30
40
50
1.0
0.9
0.8
0.7
0.6

569
MOTOROLA
Single Silicon Switching Diodes

These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed
switching applications. These devices are housed in the SC59 package which is
M1MA151AT1
M1MA152AT1
Fast trr, < 3.0 ns

Low CD, < 2.0 pF
Use M1MA151/2AT1 to order the 7 inch/3000 unit reel.
Use M1MA151/2AT3 to order the 13 inch/10,000 unit reel.
SC59 PACKAGE
SINGLE SILICON
SWITCHING DIODES
40/80 V100 mA
SURFACE MOUNT
ANODE
3
3
2
2
1
CATHODE NO CONNECTION

Rating
Reverse Voltage
Symbol
Value
Unit
VR
40
Vdc
M1MA151AT1
M1MA152AT1
80
VRM
M1MA151AT1
80
Forward Current
Vdc
40
M1MA152AT1

SC59
IF
100
mAdc
IFM
IFSM(1)
225
mAdc
500
mAdc
Symbol
Max
Unit
PD
200
mW
Rating
Power Dissipation
TJ
150
Storage Temperature
Tstg
55 to + 150

Characteristic
M1MA151AT1
Symbol
Condition
Min
Max
Unit
IR
VR = 35 V
0.1
Adc
VR = 75 V
0.1
VF
IF = 100 mA
1.2
Vdc
VR
IR = 100 A
40
Vdc
80
CD
VR = 0, f = 1.0 MHz
2.0
pF
trr(2)
IF = 10 mA, VR = 6.0 V,
RL = 100 , Irr = 0.1 IR
3.0
ns
M1MA152AT1
Forward Voltage
M1MA151AT1
M1MA152AT1
Diode Capacitance
1. t = 1 SEC
2. trr Test Circuit
REV 3
570
M1MA151AT1 M1MA152AT1
INPUT PULSE
tr
OUTPUT PULSE
tp
trr
IF
t
10%
RL
Irr = 0.1 IR
90%
VR
tp = 2 s
tr = 0.35 ns
IF = 10 mA
VR = 6 V
RL = 100
DEVICE MARKING
Marking Symbol
Type No.
151A
152A
Symbol
MA
MB
MAX
571
MOTOROLA
Single Silicon Switching Diodes

These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed
switching applications. These devices are housed in the SC59 package which is
M1MA151KT1
M1MA152KT1
Fast trr, < 3.0 ns

Low CD, < 2.0 pF
Use M1MA151/2KT1 to order the 7 inch/3000 unit reel.
Use M1MA151/2KT3 to order the 13 inch/10,000 unit reel.
SC59 PACKAGE
SINGLE SILICON
SWITCHING DIODES
40/80 V100 mA
SURFACE MOUNT
CATHODE
3
2
ANODE
1
NO CONNECTION

Rating
Reverse Voltage
Symbol
Value
Unit
VR
40
Vdc
M1MA151KT1
M1MA152KT1
80
VRM
M1MA151KT1
80
Forward Current
Vdc
40
M1MA152KT1

SC59
IF
100
mAdc
IFM
IFSM(1)
225
mAdc
500
mAdc
Symbol
Max
Unit
PD
200
mW
Rating
Power Dissipation
TJ
150
Storage Temperature
Tstg
55 to + 150

Characteristic
M1MA151KT1
Symbol
Condition
Min
Max
Unit
IR
VR = 35 V
0.1
Adc
VR = 75 V
0.1
VF
IF = 100 mA
1.2
Vdc
VR
IR = 100 A
40
Vdc
80
CD
VR = 0, f = 1.0 MHz
2.0
pF
trr(2)
IF = 10 mA, VR = 6.0 V,
RL = 100 , Irr = 0.1 IR
3.0
ns
M1MA152KT1
Forward Voltage
M1MA151KT1
M1MA152KT1
Diode Capacitance
1. t = 1 SEC
2. trr Test Circuit
REV 3
572
M1MA151KT1 M1MA152KT1
INPUT PULSE
tr
OUTPUT PULSE
tp
trr
IF
t
10%
RL
Irr = 0.1 IR
90%
VR
tp = 2 s
tr = 0.35 ns
IF = 10 mA
VR = 6 V
RL = 100

Marking Symbol
Type No.
151K
152K
Symbol
MH
MI
MHX
573
MOTOROLA

Dual Switching Diodes
M1MA151WAT1
M1MA152WAT1
These Common Anode Silicon Epitaxial Planar Dual Diodes are designed for use in
ultra high speed switching applications. These devices are housed in the SC59
package which is designed for low power surface mount applications.
Fast trr, < 10 ns
SC59 PACKAGE
COMMON ANODE
DUAL SWITCHING DIODES
40/80 V100 mA
SURFACE MOUNT
Low CD, < 15 pF

Use M1MA151/2WAT1 to order the 7 inch/3000 unit reel.
Use M1MA151/2WAT3 to order the 13 inch/10,000 unit reel.
ANODE
3
CATHODE

Rating
Reverse Voltage
M1MA151WAT1
Symbol
Value
Unit
VR
40
Vdc
M1MA152WAT1
M1MA151WAT1
80
VRM
40
IF
100
M1MA152WAT1
Forward Current
Single
mAdc
150
IFM
Single
mAdc
225
Dual
Vdc
80
Dual

SC59
340
IFSM(1)
Single
mAdc
500
Dual
750
Rating
Power Dissipation
Symbol
Max
Unit
PD
200
mW
TJ
150
Storage Temperature
Tstg
55 to + 150

Characteristic
M1MA151WAT1
Symbol
Condition
Min
Max
Unit
IR
VR = 35 V
0.1
Adc
VR = 75 V
0.1
VF
IF = 100 mA
1.2
Vdc
VR
IR = 100 A
40
Vdc
80
M1MA152WAT1
Forward Voltage
M1MA151WAT1
M1MA152WAT1
Diode Capacitance
CD
VR = 0, f = 1.0 MHz
15
pF
trr(2)
IF = 10 mA, VR = 6.0 V,
RL = 100 , Irr = 0.1 IR
10
ns
1. t = 1 SEC
2. trr Test Circuit
REV 3
574
M1MA151WAT1 M1MA152WAT1
INPUT PULSE
tr
OUTPUT PULSE
tp
trr
IF
t
10%
RL
Irr = 0.1 IR
90%
VR
tp = 2 s
tr = 0.35 ns
IF = 10 mA
VR = 6 V
RL = 100

Marking Symbol
Type No.
151WA
152WA
Symbol
MN
MO
MNX
575
MOTOROLA

Dual Switching Diodes
M1MA151WKT1
M1MA152WKT1
These Common Cathode Silicon Epitaxial Planar Dual Diodes are designed for use
in ultra high speed switching applications. These devices are housed in the SC59
package which is designed for low power surface mount applications.
Fast trr, < 3.0 ns
SC59 PACKAGE
COMMON CATHODE
DUAL SWITCHING DIODES
40/80 V100 mA
SURFACE MOUNT
Low CD, < 2.0 pF

Use M1MA151/2WKT1 to order the 7 inch/3000 unit reel.
Use M1MA151/2WKT3 to order the 13 inch/10,000 unit reel.
CATHODE
3
3
2
ANODE

Rating
Reverse Voltage
M1MA151WKT1
Symbol
Value
Unit
VR
40
Vdc
M1MA152WKT1
M1MA151WKT1
80
VRM
40
IF
100
M1MA152WKT1
Forward Current
Single
mAdc
150
IFM
Single
mAdc
225
Dual
Vdc
80
Dual

SC59
340
IFSM(1)
Single
mAdc
500
Dual
750
Rating
Power Dissipation
Symbol
Max
Unit
PD
200
mW
TJ
150
Storage Temperature
Tstg
55 to + 150

Characteristic
M1MA151WKT1
Symbol
Condition
Min
Max
Unit
IR
VR = 35 V
0.1
Adc
VR = 75 V
0.1
VF
IF = 100 mA
1.2
Vdc
VR
IR = 100 A
40
Vdc
80
M1MA152WKT1
Forward Voltage
M1MA151WKT1
M1MA152WKT1
Diode Capacitance
CD
VR = 0, f = 1.0 MHz
2.0
pF
trr(2)
IF = 10 mA, VR = 6.0 V,
RL = 100 , Irr = 0.1 IR
3.0
ns
1. t = 1 SEC
2. trr Test Circuit
REV 3
576
M1MA151WKT1 M1MA152WKT1
INPUT PULSE
tr
OUTPUT PULSE
tp
trr
IF
t
10%
RL
Irr = 0.1 IR
90%
VR
tp = 2 s
tr = 0.35 ns
IF = 10 mA
VR = 6 V
RL = 100

Marking Symbol
Type No.
151WK
152WK
Symbol
MT
MU
MTX
577
MOTOROLA
MBD54DWT1
Dual Schottky Barrier Diodes
30 VOLTS
DUAL HOTCARRIER
DIODES

Low Forward Voltage 0.35 V @ IF = 10 mAdc
Anode 1
6 Cathode
N/C 2
5 N/C
Cathode 3
4 Anode
CASE 419B 01, STYLE 6

SOT 363

Rating
Symbol
Value
Unit
Reverse Voltage
VR
30
Volts

@ TA = 25C
Derate above 25C
PF
150
1.2
mW
mW/C
Operating Junction
Temperature Range
TJ
C
55 to +150
Tstg
55 to +150
DEVICE MARKING
MBD54DWT1 = BL

Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)R
30
Volts
CT
7.6
10
pF
IR
0.5
2.0
Adc
VF
0.22
0.24
Vdc
VF
0.41
0.5
Vdc
VF
0.52
1.0
Vdc

trr
5.0
ns
VF
0.29
0.32
Vdc
VF
0.35
0.40
Vdc
REV 1
578
MBD54DWT1
820
+10 V
2k
0.1 F
tr
IF
100 H
tp
0.1 F
IF
trr
10%
DUT
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
90%
IR
VR
iR(REC) = 1 mA
OUTPUT PULSE
at iR(REC) = 1 mA)
INPUT SIGNAL
Notes: 3. tp trr

100
1000
TA = 150C
1 50C
10
1 25C
1.0
85C
25C
0.1
0.0
40C
100
TA = 125C
10
1.0
TA = 85C
0.1
0.01
55C
TA = 25C
0.001
0.1
0.2
0.3
0.4
0.5
0.6
10
15
20
25
30
14
12
10
8
6
4
2
0
10
15
20
25
30
579
MOTOROLA
MBD101
MMBD101LT1
Designed primarily for UHF mixer applications but suitable also for use in detector
and ultrafast switching circuits. Supplied in an inexpensive plastic package for
lowcost, highvolume consumer requirements. Also available in Surface Mount
package.
Low Noise Figure 6.0 dB Typ @ 1.0 GHz
SILICON SCHOTTKY
BARRIER DIODES
Very Low Capacitance Less Than 1.0 pF @ Zero Volts

High Forward Conductance 0.5 Volts (Typ) @ IF = 10 mA
2
CATHODE
1
ANODE
1
2
3
CATHODE

(TO226AC)
1
ANODE
MAXIMUM RATINGS
MBD101
Rating
MMBD101LT1
Symbol
Value
Unit
Reverse Voltage
VR
7.0
Volts

@ TA = 25C
Derate above 25C
PF
TJ
+150
Tstg
55 to +150
280
2.2
225
1.8

SOT 23 (TO 236AB)
mW
mW/C
DEVICE MARKING
MMBD101LT1 = 4M

Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)R
7.0
10
Volts
Diode Capacitance
(VR = 0, f = 1.0 MHz, Note 1)
Forward Voltage(1)
(IF = 10 mAdc)
CT
0.88
1.0
pF
VF
0.5
0.6
Volts
Reverse Leakage
(VR = 3.0 Vdc)
IR
0.02
0.25
Adc

(IR = 10 Adc)
NOTE: MMBD101LT1 is also available in bulk packaging. Use MMBD101L as the device title to order this device in bulk.
580
MBD101 MMBD101LT1
(TA = 25C unless noted)
100
0.5
IR, REVERSE LEAKAGE (m A)
1.0
0.7
VR = 3.0 Vdc
0.2
0.1
0.07
0.05
TA = 85C
10
TA = 40C
1.0
TA = 25C
0.02
0.01
0.1
30
40
50
60
70
80
90 100 110
120
0.3
130
0.4
Figure 1. Reverse Leakage
1.0
11
10
LOCAL OSCILLATOR FREQUENCY = 1.0 GHz

(TEST CIRCUIT IN FIGURE 5)
9.0
0.9
C, CAPACITANCE (pF)
0.5
0.6
0.7
0.8
0.7
8.0
7.0
6.0
5.0
4.0
3.0
2.0
0.6
1.0
2.0
3.0
4.0
1.0
0.1
0.2
0.5
1.0
2.0
PLO, LOCAL OSCILLATOR POWER (mW)
LOCAL
OSCILLATOR
UHF
NOISE SOURCE
H.P. 349A
DIODE IN
TUNED
MOUNT
NOISE
FIGURE METER
H.P. 342A
IF AMPLIFIER
NF = 1.5 dB
f = 30 MHz
5.0
10
NOTES ON TESTING AND SPECIFICATIONS

Note 1 CC and CT are measured using a capacitance bridge
(Boonton Electronics Model 75A or equivalent).
Note 2 Noise figure measured with diode under test in tuned
diode mount using UHF noise source and local
oscillator (LO) frequency of 1.0 GHz. The LO power
is adjusted for 1.0 mW. IF amplifier NF = 1.5 dB, f =
30 MHz, see Figure 5.
Note 3 LS is measured on a package having a short instead
of a die, using an impedance bridge (Boonton Radio
Model 250A RX Meter).
Figure 5. Noise Figure Test Circuit
581
MOTOROLA
MBD110DWT1
MBD330DWT1
MBD770DWT1
Dual Schottky Barrier Diodes

Application circuit designs are moving toward the consolidation of device count and
into smaller packages. The new SOT363 package is a solution which simplifies
circuit design, reduces device count, and reduces board space by putting two discrete
devices in one small sixleaded package. The SOT363 is ideal for lowpower
surface mount applications where board space is at a premium, such as portable
products.
Surface Mount Comparisons:
SOT363
Area (mm2)
Max Package PD (mW)
Device Count
4.6
120
2
Space Savings:
Package
SOT363
SOT23
40%
SOT23

SOT363
7.6
225
1
SOT23
Anode 1
70%
N/C 2
The MBD110DW, MBD330DW, and MBD770DW devices are spinoffs of our

popular MMBD101LT1, MMBD301LT1, and MMBD701LT1 SOT23 devices. They
are designed for highefficiency UHF and VHF detector applications. Readily
available to many other fast switching RF and digital applications.
Cathode 3
6 Cathode
5 N/C
4 Anode
Extremely Low Minority Carrier Lifetime

Very Low Capacitance
Low Reverse Leakage
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VR
7.0
30
70
Vdc

TA = 25C
PF
120
mW
TJ
55 to +125
Tstg
55 to +150
Reverse Voltage
MBD110DWT1
MBD330DWT1
MBD770DWT1
DEVICE MARKING
MBD110DWT1 = M4
MBD330DWT1 = T4
MBD770DWT1 = H5
REV 1
582
MBD110DWT1 MBD330DWT1 MBD770DWT1

Characteristic
(IR = 10 A)
Symbol
Typ
Max
7.0
30
70
10
0.88
1.0
0.9
0.5
1.5
1.0
0.02
13
9.0
0.25
200
200
6.0
0.5
0.38
0.52
0.42
0.7
0.6
0.45
0.6
0.5
1.0
V(BR)R
MBD110DWT1
MBD330DWT1
MBD770DWT1
Diode Capacitance
(VR = 0, f = 1.0 MHz, Note 1)
MBD110DWT1
Total Capacitance
(VR = 15 Volts, f = 1.0 MHz)
(VR = 20 Volts, f = 1.0 MHz)
MBD330DWT1
MBD770DWT1
Reverse Leakage
(VR = 3.0 V)
(VR = 25 V)
(VR = 35 V)
MBD110DWT1
MBD330DWT1
MBD770DWT1
Noise Figure
(f = 1.0 GHz, Note 2)
MBD110DWT1
Forward Voltage
(IF = 10 mA)
(IF = 1.0 mAdc)
(IF = 10 mA)
(IF = 1.0 mAdc)
(IF = 10 mA)
Min
Volts
CT
pF
CT
pF
IR
NF
MBD770DWT1
A
nAdc
nAdc
dB
VF
MBD110DWT1
MBD330DWT1
Unit
Vdc
583

MBD110DWT1
100
1.0
0.7
0.5
VR = 3.0 Vdc
0.2
0.1
0.07
0.05
10
TA = 85C
TA = 40C
1.0
0.02
TA = 25C
MBD110DWT1
0.01
30
40
50
60
70
80
90 100 110
120
MBD110DWT1
0.1
0.3
130
0.4
0.8
11
LOCAL OSCILLATOR FREQUENCY = 1.0 GHz
(Test Circuit Figure 5)
10
9
0.9
C, CAPACITANCE (pF)
0.7
1.0
0.8
0.7
8
7
6
5
4
3
2
MBD110DWT1
0.6
0.5
0.6
1.0
2.0
3.0
4.0
1
0.1
MBD110DWT1
0.2
0.5
1.0
2.0
5.0
PLO, LOCAL OSCILLATOR POWER (mW)
10
LOCAL
OSCILLATOR
UHF
NOISE SOURCE
H.P. 349A
DIODE IN
TUNED
MOUNT
NOISE
FIGURE METER
H.P. 342A
IF AMPLIFIER
NF = 1.5 dB
f = 30 MHz

Note 1 CC and CT are measured using a capacitance
bridge (Boonton Electronics Model 75A or equivalent).
Note 2 Noise figure measured with diode under test in
tuned diode mount using UHF noise source and local oscillator (LO) frequency of 1.0 GHz. The LO
power is adjusted for 1.0 mW. IF amplifier NF = 1.5
dB, f = 30 MHz, see Figure 5.
Note 3 LS is measured on a package having a short instead
of a die, using an impedance bridge (Boonton Radio
Model 250A RX Meter).
Figure 5. Noise Figure Test Circuit
584

MBD330DWT1
2.8
500
t , MINORITY CARRIER LIFETIME (ps)
CT, TOTAL CAPACITANCE (pF)
MBD330DWT1
f = 1.0 MHz
2.4
2.0
1.6
1.2
0.8
0.4
0
MBD330DWT1
400
KRAKAUER METHOD
300
200
100
0
0
3.0
6.0
9.0
12
15
18
21
24
27
30
20
40
60
30
50
70
80
90
100
Figure 7. Minority Carrier Lifetime
10
100
MBD330DWT1
MBD330DWT1
IR, REVERSE LEAKAGE ( m A)
10
TA = 100C
1.0
TA = 75C
0.1
TA = 85C
1.0
TA = 25C
0.01
TA = 40C
10
0.001
TA = 25C
0.1
0
6.0
12
18
24
30
0.2
0.4
0.6
0.8
1.0
1.2
585

MBD770DWT1
2.0
500
MBD770DWT1
f = 1.0 MHz
1.6
1.2
0.8
0.4
MBD770DWT1
400
KRAKAUER METHOD
300
200
100
0
0
5.0
10
15
20
25
30
35
40
45
50
10
30
50
70
40
60
80
90
100
10
100
MBD770DWT1
MBD770DWT1
20
TA = 100C
1.0
TA = 75C
0.1
10
TA = 85C
TA = 40C
1.0
0.01
TA = 25C
0.001
0.1
0
10
20
30
586
TA = 25C
40
50
0.2
0.4
0.8
1.2
1.6
2.0
MOTOROLA
MBD301
MMBD301LT1
Silicon Hot-Carrier Diodes

These devices are designed primarily for highefficiency UHF and VHF detector
applications. They are readily adaptable to many other fast switching RF and digital
applications. They are supplied in an inexpensive plastic package for lowcost,
highvolume consumer and industrial/commercial requirements. They are also
available in a Surface Mount package.
30 VOLTS
SILICON HOTCARRIER
DIODES
Extremely Low Minority Carrier Lifetime 15 ps (Typ)

Very Low Capacitance 1.5 pF (Max) @ VR = 15 V
Low Reverse Leakage IR = 13 nAdc (Typ) MBD301, MMBD301
1
2

(TO226AC)

MBD301
Rating
MMBD301LT1
Symbol
Value
Unit
Reverse Voltage
VR
30
Volts

@ TA = 25C
Derate above 25C
PF
Operating Junction
Temperature Range
TJ
280
2.8
200
2.0
2
CATHODE
mW
mW/C
C
55 to +125
Tstg
1
ANODE
1
2
55 to +150

SOT 23 (TO 236AB)
DEVICE MARKING
MMBD301LT1 = 4T
3
CATHODE
1
ANODE

Symbol
Min
Typ
Max
Unit
V(BR)R
30
Volts
Total Capacitance (VR = 15 V, f = 1.0 MHz) Figure 1
CT
0.9
1.5
pF
Reverse Leakage (VR = 25 V) Figure 3
IR
13
200
nAdc
Forward Voltage (IF = 1.0 mAdc) Figure 4
VF
0.38
0.45
Vdc
Forward Voltage (IF = 10 mAdc) Figure 4
VF
0.52
0.6
Vdc
Characteristic
587
MBD301 MMBD301LT1
500
2.8
C T, TOTAL CAPACITANCE (pF)
f = 1.0 MHz
2.4
400
2.0
KRAKAUER METHOD
300
1.6
1.2
200
0.8
100
0.4
0
0
3.0
6.0
9.0
12
15
18
21
24
27
30
30
40
50
60
70
80
90
100
100
20
10
TA = 100C
1.0
75C
0.1
25C
0.01
0.001
10
10
TA = 40C
TA = 85C
1.0
TA = 25C
0.1
0
6.0
12
18
24
0.2
30
IF(PEAK)
0.4
0.6
0.8
1.0
1.2
CAPACITIVE
CONDUCTION
IR(PEAK)
FORWARD
CONDUCTION
SINUSOIDAL
GENERATOR
BALLAST
NETWORK
(PADS)
STORAGE
CONDUCTION
PADS
DUT
SAMPLING
OSCILLOSCOPE
(50 INPUT)
Figure 5. Krakauer Method of Measuring Lifetime
588
MOTOROLA
MBD701
MMBD701LT1
Silicon Hot-Carrier Diodes

highvolume consumer and industrial/commercial requirements. They are also
available in a Surface Mount package.
70 VOLTS
HIGHVOLTAGE
SILICON HOT CARRIER
DIODES
Extremely Low Minority Carrier Lifetime 15 ps (Typ)

Very Low Capacitance 1.0 pF @ VR = 20 V
High Reverse Voltage to 70 Volts
Low Reverse Leakage 200 nA (Max)
1
2

(TO226AC)

MBD701
Rating
MMBD701LT1
Symbol
Value
Unit
Reverse Voltage
VR
70
Volts

@ TA = 25C
Derate above 25C
PF
Operating Junction
Temperature Range
TJ
280
2.8
200
2.0
2
CATHODE
mW
mW/C
55 to +125
Tstg
1
ANODE
55 to +150

SOT 23 (TO 236AB)
DEVICE MARKING
MMBD701LT1 = 5H
3
CATHODE
1
ANODE

Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)R
70
Volts
CT
0.5
1.0
pF
IR
9.0
200
nAdc
VF
0.42
0.5
Vdc
VF
0.7
1.0
Vdc
589
MBD701 MMBD701LT1
500
2.0
f = 1.0 MHz
400
1.6
KRAKAUER METHOD
300
1.2
0.8
200
0.4
100
0
0
5.0
10
15
20
25
30
35
40
45
50
10
80
90
100
100
30
40
50
60
70
10
TA = 100C
1.0
TA = 75C
0.1
0.01
0.001
20
TA = 25C
10
TA = 40C
TA = 85C
1.0
TA = 25C
0.1
0
10
20
30
40
50
IF(PEAK)
0.2
0.4
0.8
1.2
1.6
2.0
CAPACITIVE
CONDUCTION
IR(PEAK)
FORWARD
CONDUCTION
SINUSOIDAL
GENERATOR
BALLAST
NETWORK
(PADS)
STORAGE
CONDUCTION
PADS
DUT
SAMPLING
OSCILLOSCOPE
(50 INPUT)
590
MOTOROLA
MBV109T1
MMBV109LT1*
MV209*
Silicon Epicap Diodes

Designed for general frequency control and tuning applications; providing
solidstate reliability in replacement of mechnaical tuning methods.
* Motorola Preferred Devices
High Q with Guaranteed Minimum Values at VHF Frequencies

Controlled and Uniform Tuning Ratio
2632 pF
VOLTAGE VARIABLE
CAPACITANCE DIODES
Available in Surface Mount Package

3
1
Cathode
Anode
SC70/SOT323
3
Cathode
1
Anode
1
2
SOT23
2
Cathode
TO92
CASE 41902, STYLE 3

SC70/SOT323
1
Anode
3
1
2
MAXIMUM RATINGS
Rating
Symbol
Reverse Voltage
MBV109T1
MMBV109LT1
MV209
VR
30
Vdc
Forward Current
IF
200
mAdc

@ TA = 25C
Derate above 25C
PD
TJ
+125
Tstg
55 to +150
280
2.8
200
2.0
200
1.6

SOT 23 (TO 236AB)
Unit
mW
mW/C
1
2
CASE 18202, STYLE 1

TO92 (TO226AC)
DEVICE MARKING
MBV109T1 = J4A, MMBV109LT1 = M4A, MV209 = MV209
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.)

Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)R
30
Vdc
IR
0.1
Adc
TCC
300
ppm/C

(VR = 3.0 Vdc, f = 1.0 MHz)
Ct, Diode Capacitance

VR = 3.0 Vdc, f = 1.0 MHz
pF
Q, Figure of Merit
VR = 3.0 Vdc
f = 50 MHz
CR, Capacitance Ratio

C3/C25
f = 1.0 MHz (Note 1)
Device
Min
Nom
Max
Min
Min
Max
MBV109T1, MMBV109LT1, MV209
26
29
32
200
5.0
6.5
1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 25 Vdc.

MMBV109LT1 is also available in bulk packaging. Use MMBV109L as the device title to order this device in bulk.
(Replaces MMBV109LT1/D)
591
MBV109T1 MMBV109LT1 MV209

40
1000
36
Q, FIGURE OF MERIT
CT , CAPACITANCE pF
32
28
24
20
16
12
VR = 3 Vdc
TA = 25C
100
f = 1.0 MHz
TA = 25C
8
4
0
10
30
Figure 1. DIODE CAPACITANCE
Figure 2. FIGURE OF MERIT
C t , DIODE CAPACITANCE (NORMALIZED)
1000
f, FREQUENCY (MHz)
20
10
6.0
VR = 20 Vdc
2.0
1.0
0.6
0.2
0.1
0.06
0.02
0.01
0.006
40
100
10
100
60
0.002
0.001
60
10
100
20
+20
+40
+60
+80 +100 +120 +140
1.04
1.03
1.02
VR = 3.0 Vdc
f = 1.0 MHz
Ct Cc + Cj
1.01
1.00
0.99
0.98
0.97
0.96
75
50
25
+25
+50
+75
TA, AMBIENT TEMPERATURE
TA, AMBIENT TEMPERATURE
Figure 3. LEAKAGE CURRENT
Figure 4. DIODE CAPACITANCE
+100
+125

1. CR is the ratio of Ct measured at 3.0 Vdc divided by Ct measured at 25 Vdc.
592
MOTOROLA
MMAD130
MMAD1103
MMAD1105
MMAD1107
MMAD1109
Monolithic Diode Arrays

Surface Mount Diode Arrays
These diode arrays are multiple diode junctions fabricated by a planar process and
mounted in integrated circuit packages for use in highcurrent, fastswitching
coredriver applications. These arrays offer many of the advantages of integrated
circuits such as highdensity packaging and improved reliability. These advantages
result from such factors as fewer glasstometal seals.
Designed for Use in Computers and Peripheral Equipment
Applications Include:
Magnetic Cores
ThinFilm Memories
PlatedWire Memories
Decoding or Encoding Applications
14
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VRM
50
Vdc
SteadyState Reverse Voltage
VR
50
Vdc
Peak Forward Current 25C
IFM
500
mAdc
Continuous Forward Current
IF
400
mAdc
Power Dissipation
Derating Factor
PD
500
4.0
mW
mW/C
Operating Temperature
TA
65 to +150
Tstg
65 to +150
CASE 751A03
SO14
SO14 PIN DIAGRAM

1
Dual 10 Diode Array
16 Diode Array
3
11
10 13 14
12
2
2
11 12
14
NC Pin 4, 6, 10, 13
MMAD1103
MMAD130
8 Diode Array
(Common Cathode)
Dual 8 Diode Array

8
14
5
2
NC Pin 1, 4, 6, 10, 13
MMAD1105
7 Diode Array
(Independent)
11 12
7
11
12
14
10
7
NC Pin 6, 13
MMAD1107
10 11 12 13
14
MMAD1109
REV 1
593
MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109

Device
Description
Diagram
MMAD130
Dual 10 Diode Array
MMAD1103
16 Diode Array
MMAD1105
8 Diode Array Common Cathode
MMAD1107
Dual 8 Diode Array
MMAD1109
7 Diode Array
ELECTRICAL CHARACTERISTICS (@ 25C FreeAir Temperature)

Limit
Characteristic
Symbol
Reverse Breakdown Voltage(1)

(IR = 10 Adc)
Min
Max
50
0.1
1.2
1.6
5.0
V(BR)
Static Reverse Current

(VR = 40 Vdc)
IR
Static Forward Voltage

(IF = 100 mAdc)
(IF = 500 mAdc)(2)
VF
Peak Forward Voltage(3)

(IF = 500 mAdc)
Unit
Vdc
Adc
Vdc
VFM
Vdc
SWITCHING CHARACTERISTICS (@ 25C FreeAir Temperature)

Characteristic
Forward Recovery Time
(IF = 500 mAdc)
(IF = 200 mA, IRM = 200 mA, RL = 100
W, irr = 20 mA)
Symbol
Typical Value
Unit
tfr
20
ns
trr
8.0
ns
NOTES:
1. This parameter must be measured using pulse techniques. PW = 100 s, duty cycle 20%.
2. This parameter is measured using pulse techniques. PW = 300 s, duty cycle 2.0%. Read time is 90 s from the leading edge of the
pulse.
3. The initial instantaneous value is measured using pulse techniques. PW = 150 ns, duty cycle 2.0%, pulse rise time 10 ns. The total
capacitance shunting the diode is 19 pF maximum and the equipment bandwidth is 80 MHz.
1000
100
TA = +25C
10
1.0
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Figure 1. Typical Characteristics Static

Forward Voltage
594
MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109

TEST PROCEDURE FOR MULTIPLE DIODES
1.0. REVERSE BIAS TESTING
1.1. LEAKAGE
Regardless of device configuration type, when testing any
reverse bias condition, the forcing power supply must be applied only to the uncommon terminal of the pair. As in Figure
1, this would be pins 1 and 14. This can be referred as the
high side of the test circuit. The low side of the test circuit
must be connected to the common terminal of the pair which
in most testers is where the current measurement is taken.
This method is used to eliminate the possibility of degrading
the diode in that pair which is not under test. Diode arrays
with multiple pairs such as the MMAD1103, also have leakage paths in the die between common terminals of the pairs.
To isolate the device under test so that the leakage from the
other pairs in the package do not affect the test result, the
leakage current from the common terminals of the pairs not
under test must be shunted to measurement common.
Figure 1 shows the test configuration for both of these cases.
VR
11
12
14
IF
11
12
11
12
Vmeas
14
IF
+
Vmeas
14
Figure 2
2.1. KELVIN CONNECTION
To achieve the best possible accuracy when testing bias
currents over 10 mA, Kelvin connection to the leads of the
device under test is mandatory. True Kelvin connection dictates that two test connections are made directly to the leads
of the device. One is for power which is the bias supply, and
the other is for sense which is for the measurement circuit.
Kelvin connections are used to eliminate the effects of the
connection resistance between the lead of the device and
the contacts of the test handler and/or hand fixture. Figure 3
is an example of Kelvin connection.
BIAS
A
VR
11
12
TEST
HI
TEST
LO
MEAS
14
Figure 1
Figure 3
1.2. BREAKDOWN
It is not recommended to test breakdown on these devices
due to the possibility of degrading the device. Breakdown
may be checked on a curve tracer but extreme caution
should be used.
2.2. PULSE TESTING

When testing bias currents over 10 mA, pulse testing
should be used to minimize thermal drift of the measured value. The pulse width of a pulse test is approximately 300 s to
380 s.
2.0. FORWARD BIAS TESTING

Diode arrays are designed with the pairs in parallel; therefore, care must be taken to prevent the other diodes in the
array from affecting the measured value of the diode under
test. Figure 2 illustrates the proper technique to measure
only the correct value of the diode under test.
3.0. TESTING PROTOCOL

3.1. TEST TYPES
When testing in sequence all of the electrical characteristics, all reverse bias conditions should be tested before the
forward bias conditions are tested.
3.2. BIASING MAGNITUDES
Tests of the same test type should be grouped together
with the bias conditions in ascending order. For example:
VF @ 10 mA < 0.6 V
VF @ 50 mA < 0.8 V
VF @ 100 mA < 1 V
VF @ 500 mA < 1.5 V
595
MOTOROLA
Monolithic Diode Array
MMAD1108
Surface Mount Isolated 8Diode Array

This diode array is a multiple diode junction fabricated by a planar process and
mounted in integrated circuit packages for use in highcurrent, fastswitching
coredriver applications. This array offers the advantages of an integrated circuit with
highdensity packaging and improved reliability. This advantage results from such
factors as fewer connections, more uniform device parameters, smaller size, less
weight and fewer glasstometal seals.
Designed for use in Computers and Peripheral Equipment

Applications Include:
Magnetic Cores
ThinFilm Memories
PlatedWire Memories
Decoding or Encoding
16
1
CASE 751B05
SO16
MAXIMUM RATINGS
Rating
PIN CONNECTION DIAGRAM

Symbol
Value
Unit
VRM
50
Vdc

SteadyState Reverse Voltage
VR
50
Vdc
Peak Forward Current 25C
IFM
500
mAdc
Continuous Forward Current
IF
400
mAdc
Power Dissipation
Derating Factor
PD
500
4.0
mW
mW/C
Operating Temperature
TA
65 to +150
Tstg
65 to +150
16
15 14 13 12 11 10
ELECTRICAL CHARACTERISTICS (@ 25C FreeAir Temperature)

Limit
Characteristic
Symbol
Min
Max
Unit
V(BR)
50
Vdc
Static Reverse Current

(VR = 40 Vdc)
IR
0.1
Adc
Static Forward Voltage

(IF = 100 mAdc)
(IF = 500 mAdc)(2)
VF
1.2
1.6
5.0
Reverse Breakdown Voltage(1)

(IR = 10 Adc)
Peak Forward Voltage(3)

(IF = 500 mAdc)
VFM
Vdc
Vdc
NOTES:
1. This parameter must be measured using pulse techniques. PW = 100 s, duty cycle 20%.
2. This parameter is measured using pulse techniques. PW = 300 s, duty cycle 2.0%. Read time is 90 s from the leading edge of the
pulse.
3. The initial instantaneous value is measured using pulse techniques. PW = 150 ns, duty cycle 2.0%, pulse rise time 10 ns. The total
capacitance shunting the diode is 19 pF maximum and the equipment bandwidth is 80 MHz.
REV 1
596
MMAD1108
ELECTRICAL CHARACTERISTICS (@ 25C FreeAir Temperature) (Continued)
Characteristic
Symbol
Typical Value
Unit
tfr
20
ns
trr
8.0
ns
SWITCHING CHARACTERISTICS (@ 25C FreeAir Temperature)

Forward Recovery Time
(IF = 500 mAdc)
(IF = 200 mA, IRM = 200 mA, RL = 100
W, irr = 20 mA)
1000
100
TA = +25C
10
1.0
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Figure 1. Typical Characteristics Static

Forward Voltage
597
MMAD1108
TEST PROCEDURE FOR MULTIPLE DIODES
1.0. REVERSE BIAS TESTING
1.1. LEAKAGE
Regardless of device configuration type, when testing any
reverse bias condition, the forcing power supply must be applied only to the uncommon terminal of the pair. As in Figure
1, this would be pins 1 and 14. This can be referred as the
high side of the test circuit. The low side of the test circuit
must be connected to the common terminal of the pair which
in most testers is where the current measurement is taken.
This method is used to eliminate the possibility of degrading
the diode in that pair which is not under test. Diode arrays
with multiple pairs such as the MMAD1103, also have leakage paths in the die between common terminals of the pairs.
To isolate the device under test so that the leakage from the
other pairs in the package do not affect the test result, the
leakage current from the common terminals of the pairs not
under test must be shunted to measurement common.
Figure 1 shows the test configuration for both of these cases.
VR
11
12
14
IF
11
12
11
12
Vmeas
14
IF
+
Vmeas
14
Figure 2
2.1. KELVIN CONNECTION
To achieve the best possible accuracy when testing bias
currents over 10 mA, Kelvin connection to the leads of the
device under test is mandatory. True Kelvin connection dictates that two test connections are made directly to the leads
of the device. One is for power which is the bias supply, and
the other is for sense which is for the measurement circuit.
Kelvin connections are used to eliminate the effects of the
connection resistance between the lead of the device and
the contacts of the test handler and/or hand fixture. Figure 3
is an example of Kelvin connection.
BIAS
A
VR
11
12
TEST
HI
TEST
LO
MEAS
14
Figure 1
Figure 3
1.2. BREAKDOWN
It is not recommended to test breakdown on these devices
due to the possibility of degrading the device. Breakdown
may be checked on a curve tracer but extreme caution
should be used.
2.2. PULSE TESTING

When testing bias currents over 10 mA, pulse testing
should be used to minimize thermal drift of the measured value. The pulse width of a pulse test is approximately 300 s to
380 s.
2.0. FORWARD BIAS TESTING

Diode arrays are designed with the pairs in parallel; therefore, care must be taken to prevent the other diodes in the
array from affecting the measured value of the diode under
test. Figure 2 illustrates the proper technique to measure
only the correct value of the diode under test.
3.0. TESTING PROTOCOL

3.1. TEST TYPES
When testing in sequence all of the electrical characteristics, all reverse bias conditions should be tested before the
forward bias conditions are tested.
3.2. BIASING MAGNITUDES
Tests of the same test type should be grouped together
with the bias conditions in ascending order. For example:
VF @ 10 mA < 0.6 V
VF @ 50 mA < 0.8 V
VF @ 100 mA < 1 V
VF @ 500 mA < 1.5 V
598
MOTOROLA
Dual Hot Carrier Mixer Diodes

These devices are designed primarily for UHF mixer applications but are suitable
also for use in detector and ultrafast switching circuits.
MMBD352LT1
MMBD353LT1
MMBD354LT1
MMBD355LT1
Low Forward Voltage 0.5 Volts (Typ) @ IF = 10 mA
3
1
2

Rating
Symbol
Value
Unit
VR
7.0
VCC
1
ANODE
3
CATHODE/ANODE
MMBD352LT1
SOT 23 (TO 236AB)
Characteristic
Symbol
Max
Unit

TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
RqJA
556
C/W
PD
300
mW
2.4
mW/C
RqJA
417
C/W
TJ, Tstg
55 to +150

Derate above 25C
1
CATHODE
3
CATHODE/ANODE
MMBD352LT1 = M5G; MMBD353LT1 = M4F; MMBD354LT1 = M6H; MMBD355LT1 = MJ1
3
CATHODE

Symbol
Min
Max
Unit
Forward Voltage
(IF = 10 mAdc)
VF
0.60

(VR = 3.0 V)
(VR = 7.0 V)
IR
0.25
10
Capacitance
(VR = 0 V, f = 1.0 MHz)
1.0
OFF CHARACTERISTICS
mA
0.062 in.
0.024 in. 99.5% alumina.
1. FR 5 = 1.0
0.75
2. Alumina = 0.4
0.3
pF
2
ANODE
MMBD353LT1
SOT 23 (TO 236AB)
DEVICE MARKING
Characteristic
2
CATHODE
ANODE
1
2
ANODE
MMBD354LT1
SOT 23 (TO 236AB)
ANODE
3
CATHODE
1
2
CATHODE
MMBD355LT1
SOT 23 (TO 236AB)
REV 2
599
MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1

1.0
TA = 85C
C, CAPACITANCE (pF)
I F, FORWARD CURRENT (mA)
100
10
TA = 40C
1.0
TA = 25C
0.1
0.9
0.8
0.7
0.6
0.3
5100
0.4
0.5
0.6
0.7
0.8
1.0
2.0
3.0
4.0
MOTOROLA
Dual Schottky Barrier Diode
MMBD352WT1
These devices are designed primarily for UHF mixer applications but are suitable
also for use in detector and ultrafast switching circuits.
Low Forward Voltage 0.5 Volts (Typ) @ IF = 10 mA
3
1
2
1
ANODE
3
CATHODE/ANODE
MMBD352WT1
SOT 323 (SC 70)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VR
7.0
VCC
Symbol
Max
Unit

TA = 25C
Derate above 25C
PD
200
mW
1.6
mW/C
RqJA
625
C/W
PD
300
mW
2.4
mW/C
RqJA
417
C/W
TJ, Tstg
55 to +150
2
CATHODE
Characteristic

Derate above 25C
DEVICE MARKING
MMBD352WT1 = M5

Characteristic
Symbol
Min
Max
Unit
Forward Voltage
(IF = 10 mAdc)
VF
0.60

(VR = 3.0 V)
(VR = 7.0 V)
IR
0.25
10
Capacitance
(VR = 0 V, f = 1.0 MHz)
1.0
OFF CHARACTERISTICS
mA
pF
0.062 in.
0.024 in. 99.5% alumina.
1. FR 5 = 1.0
0.75
2. Alumina = 0.4
0.3
5101
MMBD352WT1
1.0
TA = 85C
C, CAPACITANCE (pF)
100
10
TA = 40C
1.0
TA = 25C
0.1
0.9
0.8
0.7
0.6
0.3
5102
0.4
0.5
0.6
0.7
0.8
1.0
2.0
3.0
4.0
MOTOROLA
Dual Hot-Carrier Diodes
MMBD452LT1
highvolume consumer and industrial/commercial requirements.
30 VOLTS
DUAL HOTCARRIER
DIODES

Low Reverse Leakage
3
1
2

SOT 23 (TO 236AB)

Symbol
Value
Unit
Reverse Voltage
VR
30
Volts

@ TA = 25C
Derate above 25C
PF
Operating Junction
Temperature Range
TJ
Rating
225
1.8
2
CATHODE
1
ANODE
3
CATHODE/ANODE
mW
mW/C
C
55 to +125
Tstg
55 to +150
DEVICE MARKING
MMBD452LT1 = 5N

Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)R
30
Volts
CT
0.9
1.5
pF
IR
13
200
nAdc
VF
0.38
0.45
Vdc
VF
0.52
0.6
Vdc
5103
MMBD452LT1
500
2.8
f = 1.0 MHz
2.4
400
2.0
KRAKAUER METHOD
300
1.6
1.2
200
0.8
100
0.4
0
0
3.0
6.0
9.0
12
15
18
21
24
27
30
30
40
50
60
70
80
90
100
100
20
10
TA = 100C
1.0
75C
0.1
25C
0.01
0.001
10
10
TA = 40C
TA = 85C
1.0
TA = 25C
0.1
0
6.0
12
18
24
0.2
30
IF(PEAK)
0.4
0.6
0.8
1.0
1.2
CAPACITIVE
CONDUCTION
IR(PEAK)
FORWARD
CONDUCTION
SINUSOIDAL
GENERATOR
BALLAST
NETWORK
(PADS)
STORAGE
CONDUCTION
PADS
DUT
SAMPLING
OSCILLOSCOPE
(50 INPUT)
5104
MOTOROLA
Common Anode
MMBD717LT1
20 VOLT
SCHOTTKY BARRIER
DIODES

Extremely Low Forward Voltage 0.28 Volts (Typ) @ IF = 1 mAdc
CATHODE
1
ANODE
3
2
CATHODE

SOT 323 (SC 70)

Rating
Symbol
Value
Unit
Reverse Voltage
VR
20
Volts

@ TA = 25C
Derate above 25C
PF
200
1.6
mW
mW/C
Operating Junction
Temperature Range
TJ
C
55 to +150
Tstg
55 to +150
DEVICE MARKING
MMBD717LT1 = B3

Symbol
Min
Typ
Max
Unit

(IR = 10 A)
V(BR)R
20
Volts
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
CT
2.0
2.5
pF
Reverse Leakage
(VR = 10 V)
IR
0.05
1.0
Adc
Forward Voltage
(IF = 1.0 mAdc)
VF
0.28
0.37
Vdc
Characteristic
REV 2
5105
MMBD717LT1
820
+10 V
2k
100 H
0.1 F
tr
IF
0.1 F
tp
IF
trr
10%
DUT
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
90%
IR
VR
INPUT SIGNAL
iR(REC) = 1 mA
OUTPUT PULSE
at iR(REC) = 1 mA)
Notes: 3. tp trr
5106
MOTOROLA
High-Speed Switching Diode
MMBD914LT1
3
CATHODE
1
ANODE
3
1
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
100
Vdc
Forward Current
IF
200
mAdc
IFM(surge)
500
mAdc
Symbol
Max
Unit

TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
RqJA
556
C/W
PD
300
mW
2.4
mW/C
RqJA
417
C/W
TJ, Tstg
55 to +150

SOT 23 (TO 236AB)
Characteristic

Derate above 25C
DEVICE MARKING
MMBD914LT1 = 5D

Characteristic
Symbol
Min
Max
Unit
V(BR)
100
Vdc
25
5.0
nAdc
mAdc
OFF CHARACTERISTICS
(IR = 100 mAdc)
(VR = 20 Vdc)
(VR = 75 Vdc)
IR
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CT
4.0
pF
Forward Voltage
(IF = 10 mAdc)
VF
1.0
Vdc

trr
4.0
ns
0.062 in.
0.024 in. 99.5% alumina.
1. FR 5 = 1.0
0.75
2. Alumina = 0.4
0.3
5107
MMBD914LT1
820
+10 V
2.0 k
IF
100 H
tp
tr
0.1 F
IF
trr
10%
0.1 F
90%
DUT
50 INPUT
SAMPLING
OSCILLOSCOPE
50 OUTPUT
PULSE
GENERATOR
iR(REC) = 1.0 mA
IR
VR
OUTPUT PULSE
INPUT SIGNAL
Notes: 3. tp trr

100
10
TA = 85C
I R , REVERSE CURRENT (m A)
TA = 150C
TA = 40C
10
TA = 25C
1.0
TA = 125C
1.0
TA = 85C
0.1
TA = 55C
0.01
TA = 25C
0.1
0.2
0.4
0.6
0.8
1.0
0.001
1.2
10
20
30
40
50
C D , DIODE CAPACITANCE (pF)
0.68
0.64
0.60
0.56
0.52
0
2.0
4.0
6.0
8.0
5108
MOTOROLA
MMBD1000LT1
MMBD2000T1
MMBD3000T1
MMSD1000T1
Switching Diode
Very Low Leakage ( 500 pA) promotes extended battery life by decreasing energy waste

Applications
MMBD1000LT1
ESD Protection

Steering Logic
1
2

SOT-23 (TO-236AB)
3
CATHODE
1
ANODE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VR
30
Vdc
IF
200
mAdc
IFM
(surge)
500
mA
MMBD2000T1
3
1
2

SC70/SOT323
DEVICE MARKING
3
CATHODE
MMBD1000LT1 = AY
MMBD2000T1 = DH
MMBD3000T1 = XP
MMSD1000T1 = 4K
MMBD3000T1
Characteristic
Symbol

TA = 25C
MMSD1000T1
MMBD2000T1
Derate above 25C MMBD1000LT1, MMBD3000T1,
MMSD1000T1
MMBD2000T1
PD

MMSD1000T1
MMBD2000T1
RJA
1
ANODE
Max
Unit
mW
2
1
225
150
1.8

SC59
mW/C
1.2
3
CATHODE
2
ANODE
C/W
556
MMSD1000T1
833
TJ, Tstg
55 to +150
C
1

SOD123
1
CATHODE
2
ANODE
REV 1
5109
MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1

Characteristic
Symbol
Min
Max
Unit
V(BR)
30
Reverse Voltage Leakage Current (VR = 75 V)
IR
500
pA

VF
850
950
mV
CD
2.0
pF
trr
3.0
OFF CHARACTERISTICS
820
+10 V
2k
100 H
0.1 F
tr
IF
0.1 F
tp
IF
trr
10%
DUT
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
90%
IR
VR
INPUT SIGNAL
iR(REC) = 1 mA
OUTPUT PULSE
at iR(REC) = 1 mA)
Notes: 3. tp trr
5110
MOTOROLA
MMBD1005LT1
MMBD2005T1
MMBD3005T1
Switching Diode
MMBD1005LT1

Applications
ESD Protection
ANODE
3
CATHODE
1
2
CATHODE
Steering Logic
3
1
2

SOT-23 (TO-236AB)
MMBD2005T1
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VR
30
Vdc
IF
200
mAdc
IFM
(surge)
500
mA
1
2

SC70/SOT323
DEVICE MARKING
MMBD3005T1
MMBD1005LT1 = A3
MMBD2005T1 = DI
MMBD3005T1 = XQ
Characteristic
Symbol

TA = 25C
MMBD2005T1
MMBD2005T1
PD

MMBD2005T1
RJA
Max
2
1
mW
225
150
1.8
1.2
TJ, Tstg
Unit

SC59
mW/C
C/W
556
833
55 to +150
REV 1
5111

Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
V(BR)
30
IR
500
pA

VF
850
950
mV
CD
2.0
pF
trr
3.0
820
+10 V
2k
100 H
0.1 F
tr
IF
0.1 F
tp
IF
trr
10%
DUT
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
90%
IR
VR
INPUT SIGNAL
iR(REC) = 1 mA
OUTPUT PULSE
at iR(REC) = 1 mA)
Notes: 3. tp trr
5112
MOTOROLA
MMBD1010LT1
MMBD2010T1
MMBD3010T1
Switching Diode
MMBD1010LT1

Applications
ANODE
1
ESD Protection
3
CATHODE
Steering Logic
2
ANODE
Symbol
Value

SOT-23 (TO-236AB)
Unit
VR
30
Vdc
IF
200
mAdc
IFM
(surge)
500
mA
MMBD2010T1
MAXIMUM RATINGS
Rating
3
1
2

SC70/SOT323
DEVICE MARKING
MMBD1010LT1 = A5
MMBD2010T1 = DP
MMBD3010T1 = XS
MMBD3010T1
Characteristic
Symbol

TA = 25C
MMBD2010T1
MMBD2010T1
PD

MMBD2010T1
RJA
Max
mW
225
150
1.8
1.2
TJ, Tstg
Unit
2
1
mW/C

SC59
C/W
556
833
55 to +150
REV 1
5113

Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
V(BR)
30
IR
500
pA

VF
850
950
mV
CD
2.0
pF
trr
3.0
820
+10 V
2k
100 H
0.1 F
tr
IF
0.1 F
tp
IF
trr
10%
DUT
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
90%
IR
VR
INPUT SIGNAL
iR(REC) = 1 mA
OUTPUT PULSE
at iR(REC) = 1 mA)
Notes: 3. tp trr
5114
MOTOROLA
Monolithic Dual Switching Diodes
MMBD2835LT1
MMBD2836LT1
CATHODE
1
ANODE
3
2
CATHODE
3
1
2

SOT 23 (TO 236AB)

Rating
Symbol
Value
Unit
VR
35
75
Vdc
IF
100
mAdc
Symbol
Max
Unit

TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
RqJA
556
C/W
PD
300
mW
2.4
mW/C
RqJA
417
C/W
TJ, Tstg
55 to +150
Reverse Voltage
MMBD2835LT1
MMBD2836LT1
Forward Current
Characteristic

Derate above 25C
DEVICE MARKING
MMBD2835LT1 = A3X; MMBD2836LT1 = A2X

Characteristic
Symbol
Min
Max
Unit
V(BR)
35
75
Vdc
IR
OFF CHARACTERISTICS
(VR = 30 Vdc)
(VR = 50 Vdc)
MMBD2835LT1
MMBD2836LT1
MMBD2835LT1
MMBD2836LT1
nAdc
100
100
CT
4.0
pF

VF
1.0
1.0
1.2
Vdc
Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1)
trr
4.0
ns
0.062 in.
0.024 in. 99.5% alumina.
1. FR 5 = 1.0
0.75
2. Alumina = 0.4
0.3
REV 1
5115
MMBD2835LT1 MMBD2836LT1
820
+10 V
2.0 k
IF
100 H
tp
tr
0.1 F
IF
trr
10%
0.1 F
90%
DUT
50 INPUT
SAMPLING
OSCILLOSCOPE
50 OUTPUT
PULSE
GENERATOR
iR(REC) = 1.0 mA
IR
VR
OUTPUT PULSE
INPUT SIGNAL
Notes: 3. tp trr
CURVES APPLICABLE TO EACH CATHODE

100
10
TA = 85C
TA = 150C
TA = 40C
10
TA = 25C
1.0
TA = 125C
1.0
TA = 85C
0.1
TA = 55C
0.01
TA = 25C
0.1
0.2
0.4
0.6
0.8
1.0
0.001
1.2
10
20
30
40
50
1.75
1.50
1.25
1.00
0.75
0
2.0
4.0
6.0
8.0
5116
MOTOROLA
Monolithic Dual Switching Diodes
MMBD2837LT1
MMBD2838LT1
ANODE
1
3
CATHODE
2
ANODE
3

Rating
Symbol
Value
Unit
VRM
75
Vdc
VR
30
50
Vdc
IFM
450
300
mAdc
IO
150
100
mAdc
Symbol
Max
Unit

TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
RqJA
556
C/W
PD
300
mW
2.4
mW/C
RqJA
417
C/W
TJ, Tstg
55 to +150
1
2

D.C. Reverse Voltage
MMBD2837LT1
MMBD2838LT1

Average Rectified Current

SOT 23 (TO 236AB)
Characteristic

Derate above 25C
DEVICE MARKING
MMBD2837LT1 = A5; MMBD2838LT1 = MA6

Characteristic
Symbol
Min
Max
Unit
V(BR)
35
75
Vdc
0.1
0.1
OFF CHARACTERISTICS
(VR = 30 Vdc)
(VR = 50 Vdc)
MMBD2837LT1
MMBD2838LT1
Adc
IR
MMBD2837LT1
MMBD2838LT1
CT
4.0
pF

VF
1.0
1.0
1.2
Vdc
Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1)
trr
4.0
ns
0.062 in.
0.024 in. 99.5% alumina.
1. FR 5 = 1.0
0.75
2. Alumina = 0.4
0.3
REV 1
5117
MMBD2837LT1 MMBD2838LT1
820
+10 V
2.0 k
IF
100 H
tp
tr
0.1 F
IF
trr
10%
0.1 F
90%
DUT
50 INPUT
SAMPLING
OSCILLOSCOPE
50 OUTPUT
PULSE
GENERATOR
iR(REC) = 1.0 mA
IR
VR
OUTPUT PULSE
INPUT SIGNAL
Notes: 3. tp trr
100
10
TA = 85C
TA = 150C
TA = 40C
10
TA = 25C
1.0
TA = 125C
1.0
TA = 85C
0.1
TA = 55C
0.01
TA = 25C
0.1
0.2
0.4
0.6
0.8
1.0
0.001
1.2
10
20
30
40
50
1.0
0.9
0.8
0.7
0.6
5118
MOTOROLA
Switching Diode
MMBD6050LT1
3
CATHODE
1
ANODE
1
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
70
Vdc
Forward Current
IF
200
mAdc
IFM(surge)
500
mAdc
Symbol
Max
Unit

TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
RqJA
556
C/W
PD
300
mW
2.4
mW/C
RqJA
417
C/W
TJ, Tstg
55 to +150

SOT 23 (TO 236AB)
Characteristic

Derate above 25C
DEVICE MARKING
MMBD6050LT1 = 5A

Symbol
Min
Max
Unit
V(BR)
70
Vdc

(VR = 50 Vdc)
IR
0.1
Adc
Forward Voltage
(IF = 1.0 mAdc)
(IF = 100 mAdc)
VF
0.55
0.85
0.7
1.1

(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1)
trr
4.0
ns
Capacitance (VR = 0 V)
2.5
pF
Characteristic
OFF CHARACTERISTICS
0.062 in.
0.024 in. 99.5% alumina.
Vdc
1. FR 5 = 1.0
0.75
2. Alumina = 0.4
0.3
REV 1
5119
MMBD6050LT1
820
+10 V
2.0 k
IF
100 H
tp
tr
0.1 F
IF
trr
10%
0.1 F
90%
DUT
50 INPUT
SAMPLING
OSCILLOSCOPE
50 OUTPUT
PULSE
GENERATOR
iR(REC) = 1.0 mA
IR
VR
OUTPUT PULSE
INPUT SIGNAL
Notes: 3. tp trr
100
10
TA = 85C
TA = 150C
TA = 40C
10
TA = 25C
1.0
TA = 125C
1.0
TA = 85C
0.1
TA = 55C
0.01
TA = 25C
0.1
0.2
0.4
0.6
0.8
1.0
0.001
1.2
10
20
30
40
50
0.68
0.64
0.60
0.56
0.52
0
2.0
4.0
6.0
8.0
5120
MOTOROLA
MMBD6100LT1
ANODE
1
3
CATHODE
2
ANODE
3
1
2

SOT 23 (TO 236AB)

Rating
Symbol
Value
Unit
Reverse Voltage
VR
70
Vdc
Forward Current
IF
200
mAdc
IFM(surge)
500
mAdc
Symbol
Max
Unit

TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
RqJA
556
C/W
PD
300
mW
2.4
mW/C
RqJA
417
C/W
TJ, Tstg
55 to +150
Characteristic

Derate above 25C
DEVICE MARKING
MMBD6100LT1 = 5BM

Symbol
Min
Max
Unit
V(BR)
70
Vdc

(VR = 50 Vdc)
IR
0.1
Adc
Forward Voltage
(IF = 1.0 mAdc)
(IF = 100 mAdc)
VF
0.55
0.85
0.7
1.1

(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1)
trr
4.0
ns
Capacitance
(VR = 0 V)
2.5
pF
Characteristic
OFF CHARACTERISTICS
(I(BR) = 100 Adc)
Vdc
0.062 in.
0.024 in. 99.5% alumina.
1. FR 5 = 1.0
0.75
2. Alumina = 0.4
0.3
5121
MMBD6100LT1
820
+10 V
2.0 k
IF
100 H
tp
tr
0.1 F
IF
trr
10%
0.1 F
90%
DUT
50 INPUT
SAMPLING
OSCILLOSCOPE
50 OUTPUT
PULSE
GENERATOR
iR(REC) = 1.0 mA
IR
VR
OUTPUT PULSE
INPUT SIGNAL
Notes: 3. tp trr
100
10
TA = 85C
TA = 150C
TA = 40C
10
TA = 25C
1.0
TA = 125C
1.0
TA = 85C
0.1
TA = 55C
0.01
TA = 25C
0.1
0.2
0.4
0.6
0.8
1.0
0.001
1.2
10
20
30
40
50
1.0
0.9
0.8
0.7
0.6
5122
MOTOROLA
MMBD7000LT1
1
ANODE
3
CATHODE/ANODE
2
CATHODE
3
1
2

Rating
Symbol
Value
Unit
Reverse Voltage
VR
100
Vdc
Forward Current
IF
200
mAdc
IFM(surge)
500
mAdc
Symbol
Max
Unit

TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
RqJA
556
C/W
PD
300
mW
2.4
mW/C
RqJA
417
C/W
TJ, Tstg
55 to +150

SOT 23 (TO 236AB)
Characteristic

Derate above 25C
DEVICE MARKING
MMBD7000LT1 = M5C

Characteristic
Symbol
Min
Max
Unit
V(BR)
100
Vdc
IR
IR2
IR3
1.0
3.0
100
0.55
0.67
0.75
0.7
0.82
1.1
OFF CHARACTERISTICS
(VR = 50 Vdc)
(VR = 100 Vdc)
(VR = 50 Vdc, 125C)
Adc
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 100 mAdc)
VF

trr
4.0
ns
Capacitance (VR = 0 V)
1.5
pF
0.062 in.
0.024 in. 99.5% alumina.
Vdc
1. FR 5 = 1.0
0.75
2. Alumina = 0.4
0.3
5123
MMBD7000LT1
820
+10 V
2.0 k
IF
100 H
tp
tr
0.1 F
IF
trr
10%
0.1 F
90%
DUT
50 INPUT
SAMPLING
OSCILLOSCOPE
50 OUTPUT
PULSE
GENERATOR
iR(REC) = 1.0 mA
IR
VR
OUTPUT PULSE
INPUT SIGNAL
Notes: 3. tp trr
100
10
TA = 85C
TA = 150C
TA = 40C
10
TA = 25C
1.0
TA = 125C
1.0
TA = 85C
0.1
TA = 55C
0.01
TA = 25C
0.1
0.2
0.4
0.6
0.8
1.0
0.001
1.2
10
20
30
40
50
0.68
0.64
0.60
0.56
0.52
0
2.0
4.0
6.0
8.0
5124
MOTOROLA
Silicon Tuning Diode
MMBV105GLT1
This device is designed in the Surface Mount package for general frequency control
and tuning applications. It provides solidstate reliability in replacement of mechanical
tuning methods.

30 VOLT
VOLTAGE VARIABLE
CAPACITANCE DIODE
3
Cathode
1
Anode

SOT 23 (TO 236AB)
MAXIMUM RATINGS
Symbol
Value
Unit
Reverse Voltage
Rating
VR
30
Vdc
Forward Current
IF
200
mAdc

Derate above 25C
PD
225
1.8
mW
mW/C
TJ
+125
Tstg
55 to +150
DEVICE MARKING
MMBV105GLT1 = M4E

Characteristic
(IR = 10 Adc)
Symbol
Min
Max
Unit
V(BR)R
30
Vdc
IR
50
nAdc

(VR = 28 Vdc)
Device Type
MMBV105GLT1
CT
VR = 25 Vdc, f = 1.0 MHz
pF
Q
VR = 3.0 Vdc
f = 50 MHz
CR
C3/C25
f = 1.0 MHz
Min
Max
Typ
Min
Max
1.5
2.8
250
4.0
6.5
REV 1
5125
MMBV105GLT1
20
1000
16
Q, FIGURE OF MERIT
CT , DIODE CAPACITANCE (pF)
18
14
12
10
8.0
6.0
f = 1.0 MHz
TA = 25C
4.0
VR = 3 Vdc
TA = 25C
100
2.0
0.5
1.0
2.0 3.0
5.0
10
10
20 30
10
100
f, FREQUENCY (MHz)
Figure 2. Figure of Merit
CT , DIODE CAPACITANCE (NORMALIZED)
0
0.3
1000
1.04
1.03
VR = 3.0 Vdc
f = 1.0 MHz
1.02
1.01
1.00
0.99
0.98
0.97
0.96
75
50
25
+25
+50
+75
+100
+125
5126
MOTOROLA
MMBV409LT1
MV409

These devices are designed for general frequency control and tuning applications.
They provide solidstate reliability in replacement of mechanical tuning methods.

VOLTAGE VARIABLE
CAPACITANCE DIODES

3
Cathode
1
Anode
SOT23
3
2
Cathode
TO92
1
Anode
1
2

SOT 23 (TO 236AB)
MAXIMUM RATINGS
Rating
Symbol
Reverse Voltage
MBV409
MMBV409LT1
Unit
VR
20
Vdc
Forward Current
IF
200
mAdc

@ TA = 25C
Derate above 25C
PD
TJ
+125
Tstg
55 to +150
1
2
280
2.8
225
1.8
mW
mW/C
CASE 18202, STYLE 1

TO92 (TO226AC)
DEVICE MARKING
MMBV409LT1 = X5, MV409 = MV409

Characteristic
(IR = 10 Adc)
Symbol
Min
Typ
Max
Unit
V(BR)R
20
Vdc
IR
0.1
Adc
TCC
300
ppm/C

(VR = 15 Vdc)
(VR = 3.0 Vdc, f = 1.0 MHz)

VR = 3.0 Vdc, f = 1.0 MHz
pF
Device
MMBV409LT1, MV409
Q, Figure of Merit
VR = 3.0 Vdc
f = 50 MHz

C3/C8
f = 1.0 MHz(1)
Min
Nom
Max
Min
Min
Max
26
29
32
200
1.5
1.9
1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 8 Vdc.
5127
MMBV409LT1 MV409
1000
32
Q, FIGURE OF MERIT
C T, DIODE CAPACITANCE (pF)
40
f = 1.0 MHz
TA = 25C
24
16
100
10
20
30
1000
C t , DIODE CAPACITANCE (NORMALIZED)
VR = 15 Vdc
0.2
0.1
0.06
0.02
0.01
0.006
20
+20
+40
+60
+80 +100 +120 +140
5128
100
f, FREQUENCY (MHz)
2.0
1.0
0.6
40
10
20
10
6.0
0.002
0.001
60
10
100
100
60
VR = 3 Vdc
TA = 25C
1.04
1.03
VR = 3.0 Vdc
f = 1.0 MHz
1.02
1.01
1.00
0.99
0.98
0.97
0.96
75
50
25
+25
+50
+75
+100
+125
MOTOROLA
MMBV432LT1
This device is designed for FM tuning, general frequency control and tuning, or any
topoftheline application requiring backtoback diode configuration for minimum
signal distortion and detuning. This device is supplied in the SOT23 plastic package
for high volume, pick and place assembly requirements.
High Figure of Merit Q = 150 (Typ) @ VR = 2.0 Vdc, f = 100 MHz
DUAL
VOLTAGE VARIABLE
CAPACITANCE DIODE
Guaranteed Capacitance Range

Dual Diodes Save Space and Reduce Cost
Surface Mount Package
Monolithic Chip Provides Improved Matching Guaranteed 1.0% (Max)

Over Specified Tuning Range
1
2

SOT 23 (TO 236AB)
2
3
MAXIMUM RATINGS (Each Diode)

Symbol
Value
Unit
Reverse Voltage
Rating
VR
14
Vdc
Forward Current
IF
200
mAdc

Derate above 25C
PD
225
1.8
mW
mW/C
TJ
+125
Tstg
55 to +125
DEVICE MARKING
MMBV432LT1 = M4B

Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)R
14
Vdc

(VR = 9.0 Vdc)
IR
100
nAdc
Diode Capacitance
(VR = 2.0 Vdc, f = 1.0 MHz)
CT
43
48.1
pF
Capacitance Ratio C2/C8

(f = 1.0 MHz)
CR
1.5
2.0
100
150

(IR = 10 Adc)
Figure of Merit
(VR = 2.0 Vdc, f = 100 MHz)
REV 1
5129
MMBV432LT1
TYPICAL CHARACTERISTICS (Each Diode)
550
70
Q, FIGURE OF MERIT
100
50
30
f = 1.0 MHz
TA = 25C
20
350
250
TA = 25C
f = 100 MHz
150
10
50
10
10
Figure 2. Figure of Merit versus Voltage
VR = 2.0 Vdc
TA = 25C
500
200
100
50
20
1000
20
10
2000
Q, FIGURE OF MERIT
450
30
50 70 100
1.06
1.04
VR = 2.0 Vdc
1.02
VR = 4.0 Vdc
1.00
0.98
f = 1.0 MHz
0.96
75
200 300
50
25
+25
+50
+75
+100
+125
f, FREQUENCY (MHz)
Figure 4. Diode Capacitance versus Temperature
10
TA = 125C
5
2
1
0.5
TA = 75C
0.2
0.1
0.05
TA = 25C
0.02
0.01
10
12
14
Figure 5. Reverse Current versus Reverse Voltage
5130
MOTOROLA
MMBV609LT1
topoftheline application requiring backtoback diode configuration for minimum
signal distortion and detuning. This device is supplied in the SOT23 plastic package
for high volume, pick and place assembly requirements.
DUAL
VOLTAGE VARIABLE
CAPACITANCE DIODE

Surface Mount Package
Monolithic Chip Provides Improved Matching

1
Hyper Abrupt Junction Process Provides High Tuning Ratio

SOT 23 (TO 236AB)
MAXIMUM RATINGS (Each Diode)

Rating
Symbol
Value
Unit
Reverse Voltage
VR
20
Vdc
Forward Current
IF
100
mAdc

Derate above 25C
PD
225
1.8
mW
mW/C
TJ
+125
Tstg
55 to +125
DEVICE MARKING
MMBV609LT1 = 5L

Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)R
20
Vdc

(VR = 15 Vdc)
IR
10
nAdc
Diode Capacitance
(VR = 3.0 Vdc, f = 1.0 MHz)
CT
26
32
pF

(f = 1.0 MHz)
CR
1.8
2.4
250
450

(IR = 10 Adc)
Figure of Merit
(VR = 3.0 Vdc, f = 50 MHz)
5131
MMBV609LT1
1000
40
f = 1.0 MHz
TA = 25C
Q, FIGURE OF MERIT
50
30
20
VR = 3 Vdc
TA = 25C
100
10
10
20
30
10
40
10
100
f, FREQUENCY (MHz)
1000
1.04
1.03
VR = 3.0 Vdc
f = 1.0 MHz
1.02
1.01
1.00
0.99
0.98
0.97
0.96
75
50
25
+25
+50
+75
+100
+125
5132
MOTOROLA
MMBV809LT1
This device is designed for 900 MHz frequency control and tuning applications. It
provides solidstate reliability in replacement of mechanical tuning methods.

4.56.1 pF
VOLTAGE VARIABLE
CAPACITANCE DIODE
3
CATHODE
1
ANODE
3
1
2

SOT 23 (TO 236AB)
MAXIMUM RATINGS
Rating
Reverse Voltage
Symbol
Value
Unit
VR
20
Vdc
Forward Current
IF
20
mAdc
Total Power Dissipation(1) @ TA = 25C

Derate above 25C
PD
225
1.8
mW
mW/C
TJ
+125
Tstg
55 to +125

1. FR5 Board 1.0 x 0.75 x 0.62 in.
DEVICE MARKING
MMBV809LT1 = 5K

Characteristic All Types
(IR = 10 Adc)
(VR = 15 Vdc)
VR = 2.0 Vdc, f = 1.0 MHz
pF
Device
MMBV809LT1
Symbol
Min
Typ
Max
Unit
V(BR)R
20
Vdc
IR
50
nAdc
Q, Figure of Merit
VR = 3.0 Vdc
f = 500 MHz

C2/C8
f = 1.0 MHz(2)
Min
Typ
Max
Typ
Min
Max
4.5
5.3
6.1
75
1.8
2.6
2. CR is the ratio of Ct measured at 2.0 Vdc divided by Ct measured at 8.0 Vdc.
REV 1
5133
MMBV809LT1
10
1000
Q, FIGURE OF MERIT
7
6
5
4
3
VR = 3 Vdc
TA = 25C
100
2
1
0
0.5
10
10
0.1
15
R S , SERIES RESISTANCE (MHz)
VR = 3.0 Vdc
f = 1.0 MHz
800
600
400
0.2
0.4
0.6
0.8
f, FREQUENCY (GHz)
Figure 3. Series Resistance
5134
10
f, FREQUENCY (GHz)
1000
1.0
1.0
1.2
1.04
1.03
VR = 3.0 Vdc
f = 1.0 MHz
1.02
1.01
1.00
0.99
0.98
0.97
0.96
75
50
25
+25
+50
+75
+100
+125
MOTOROLA

These devices are designed in the popular PLASTIC PACKAGE for high volume
requirements of FM Radio and TV tuning and AFC, general frequency control and
tuning applications.They provide solidstate reliability in replacement of mechanical
tuning methods. Also available in Surface Mount Package up to 33pF.
High Q
Standard Capacitance Tolerance 10%
3
Cathode
1
Anode
SOT23
2
Cathode
TO92
1
Anode
MMBV2101LT1
MMBV2103LT1
MMBV2105LT1
MMBV2107LT1
MMBV2108LT1
MMBV2109LT1
MV2101 MV2104
MV2105 MV2108
MV2109 MV2111
MV2115
6.8100 pF
30 VOLTS
VOLTAGE VARIABLE
CAPACITANCE DIODES
MAXIMUM RATINGS
Rating
Symbol
MV21xx
MMBV21xxLT1
Unit
Reverse Voltage
VR
30
Vdc
Forward Current
IF
200
mAdc

@ TA = 25C
Derate above 25C
PD
TJ
+150
Tstg
55 to +150
280
2.8
225
1.8

SOT 23 (TO 236AB)
mW
mW/C
DEVICE MARKING
MMBV2101LT1 = M4G
MMBV2103LT1 = 4H
MMBV2105LT1 = 4U
MMBV2107LT1 = 4W
MMBV2108LT1 = 4X
MMBV2109LT1 = 4J
CASE 18202, STYLE 1

TO92 (TO226AC)

Characteristic
(IR = 10 Adc)
Symbol
Min
Typ
Max
Unit
V(BR)R
30
Vdc
IR
0.1
Adc
TCC
280
ppm/C

(VR = 25 Vdc, TA = 25C)
(VR = 4.0 Vdc, f = 1.0 MHz)
REV 1
5135
MMBV2101LT1 MMBV2103LT1 MMBV2105LT1 MMBV2107LT1 MMBV2108LT1 MMBV2109LT1

VR = 4.0 Vdc, f = 1.0 MHz
pF
Q, Figure of Merit
VR = 4.0 Vdc,
f = 50 MHz
TR, Tuning Ratio

C2/C30
f = 1.0 MHz
Device
Min
Nom
Max
Typ
Min
Typ
Max
MMBV2101LT1/MV2101
MMBV2103LT1
MV2104
MMBV2105LT1/MV2105
MMBV2107LT1
MMBV2108LT1/MV2108
MMBV2109LT1/MV2109
6.1
9.0
10.8
13.5
19.8
24.3
29.7
6.8
10
12
15
22
27
33
7.5
11
13.2
16.5
24.2
29.7
36.3
450
400
400
400
350
300
200
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.7
2.9
2.9
2.9
2.9
3.0
3.0
3.2
3.2
3.2
3.2
3.2
3.2
3.2
MV2111
MV2115
42.3
90
47
100
51.7
110
150
100
2.5
2.6
3.0
3.0
3.2
3.3
MMBV2101LT1, MMBV2103LT1, MMBV2105LT1, MMBV2107LT1 thru MMBV2109LT1, are also available in bulk. Use the device title and drop
the T1 suffix when ordering any of these devices in bulk.

(CT = CC + CJ). CT is measured at 1.0 MHz using a capacitance bridge (Boonton Electronics Model 75A or
equivalent).
2. TR, TUNING RATIO
measured at 30 Vdc.
Q is calculated by taking the G and C readings of an admittance bridge at the specified frequency and substituting in the following equations:
Q

COEFFICIENT
1.0 MHz, TA = +85C in the following equation, which defines TCC:
TCC
CT(65C)
+ CT() 85C)
85 ) 65
106
CT(25C)
Accuracy limited by measurement of CT to 0.1 pF.
+ 2pGfC
(Boonton Electronics Model 33AS8 or equivalent). Use

Lead Length
1/16.
5136
MMBV2101LT1 MMBV2103LT1 MMBV2105LT1 MMBV2107LT1 MMBV2108LT1 MMBV2109LT1

TYPICAL DEVICE CHARACTERISTICS
1000
TA = 25C
f = 1.0 MHz
500
MV2115
200
100
MMBV2109LT1/MV2109
50
MMBV2105LT1/MV2105
20
MMBV2101LT1/MV2101
10
5.0
2.0
1.0
0.1
0.2
0.5
0.3
1.0
3.0
2.0
20
10
5.0
30

100
50
VR = 2.0 Vdc
1.030
1.020
VR = 4.0 Vdc
1.010
1.000
VR = 30 Vdc
0.990
NORMALIZED TO CT
at TA = 25C
VR = (CURVE)
0.980
0.970
0.960
75
50
25
0
+25
+50
+75
1.040
TA = 125C
20
10
5.0
2.0
1.0
0.50
TA = 75C
0.20
0.10
TA = 25C
0.05
+100
0.02
0.01
+125
10
15
20
25
30
Figure 2. Normalized Diode Capacitance versus

5000
3000
2000
5.0
Figure 3. Reverse Current versus Reverse Bias

Voltage
5000
3000
2000
MMBV2101LT1/MV2101
500
300
200
Q, FIGURE OF MERIT
Q, FIGURE OF MERIT
MMBV2109LT1/MV2109
1000
MV2115
100
50
30
20
10
1.0
10
3.0
5.0
7.0
20
30
Figure 4. Figure of Merit versus Reverse Voltage
MMBV2101LT1/MV2101
500
300
200
100
MV2115
50
30
20
TA = 25C
f = 50 MHz
2.0
1000
10
10
TA = 25C
VR = 4.0 Vdc
20
MMBV2109LT1/MV2109
100
30
50
70
f, FREQUENCY (MHz)
200
250
5137
MOTOROLA
MMBV3102LT1
This device is designed in the Surface Mount package for general frequency control
and tuning applications. It provides solidstate reliability in replacement of mechanical
tuning methods.
22 pF (Nominal)
30 VOLTS
VOLTAGE VARIABLE
CAPACITANCE DIODE

3
Cathode
1
Anode
1
2

SOT 23 (TO 236AB)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
30
Vdc
Forward Current
IF
200
mAdc

Derate above 25C
PD
225
1.8
mW
mW/C
TJ
+125
Tstg
55 to +150
DEVICE MARKING
MMBV3102LT1 = M4C

Characteristic
(IR = 10 Adc)
(VR = 25 Vdc, TA = 25C)
(VR = 4.0 Vdc, f = 1.0 MHz)
Symbol
Min
Typ
Max
Unit
V(BR)R
30
Vdc
IR
0.1
Adc
TCC
300
ppm/C

VR = 3.0 Vdc, f = 1.0 MHz
pF
Device
MMBV3102LT1
Q, Figure of Merit
VR = 3.0 Vdc
f = 50 MHz

C3/C25
f = 1.0 MHz
Min
Nom
Max
Min
Min
Typ
20
22
25
200
4.5
4.8
5138
MMBV3102LT1
20
40
Q, FIGURE OF MERIT (x 1000)
36
32
28
24
20
16
12
f = 1.0 MHz
TA = 25C
8.0
0.5
1.0
1.0
2.0 3.0
5.0
10
0.3
0.2
20 30
3.0
6.0
9.0
12
15
18
21
24
C T , DIODE CAPACITANCE (NORMALIZED)
3.0
2.0
100
10
VR = 20 Vdc
1.0
0.1
0.01
0.001
60
5.0
0.5
4.0
0
0.3
TA = 25C
f = 50 MHz
10
20
+20
+60
+100
+140
27
30
1.04
1.03
VR = 3.0 Vdc
f = 1.0 MHz
1.02
1.01
1.00
0.99
0.98
0.97
0.96
75
50
25
+25
+50
+75
+100
+125

1. CR is the ratio of CT measured at 3.0 Vdc divided by CT measured at 25 Vdc.
5139
MOTOROLA
MMBV3401LT1
Silicon Pin Diode
This device is designed primarily for VHF band switching applications but is also
suitable for use in generalpurpose switching circuits. Supplied in a Surface Mount
package.
SILICON PIN
SWITCHING DIODE
Rugged PIN Structure Coupled with Wirebond Construction

for Optimum Reliability
Low Capacitance 0.7 pF Typ at VR = 20 Vdc
Very Low Series Resistance at 100 MHz 0.34 Ohms (Typ)
@ IF = 10 mAdc
3
1
3
Cathode
1
Anode

SOT 23 (TO 236AB)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
20
Vdc
Forward Power Dissipation @ TA = 25C

Derate above 25C
PD
200
2.0
mW
mW/C
TJ
+125
Tstg
55 to +150
DEVICE MARKING
MMBV3401LT1 = 4D

Symbol
Min
Typ
Max
Unit
V(BR)R
35
Vdc
Diode Capacitance
(VR = 20 Vdc)
CT
1.0
pF
Series Resistance (Figure 5)

(IF = 10 mAdc, f = 100 MHz)
RS
0.7
Reverse Leakage Current

(VR = 25 Vdc)
IR
0.1
Adc
Characteristic
(IR = 10 Adc)
REV 1
5140
MMBV3401LT1
50
1.4
I F , FORWARD CURRENT (mA)
R S , SERIES RESISTANCE (OHMS)
1.6
1.2
TA = 25C
1.0
0.8
0.6
0.4
40
30
TA = 25C
20
10
0.2
0
2.0
4.0
6.0
8.0
10
12
14
0
0.5
16
0.6
0.7
0.8
0.9
1.0
+100
+140

100
20
I R , REVERSE CURRENT ( A)
40
10
7.0
5.0
TA = 25C
2.0
1.0
0.7
0.5
10
4.0
VR = 25 Vdc
1.0
0.4
0.1
0.04
0.01
0.004
0.2
+3.0
3.0 6.0 9.0
12
15
18
21
24
27
0.001
60
20
+20
+60
5141
MOTOROLA
High Voltage Silicon Pin Diodes

These devices are designed primarily for VHF band switching applications but are
also suitable for use in generalpurpose switching circuits. They are supplied in a
costeffective plastic package for economical, highvolume consumer and industrial
requirements. They are also available in surface mount.
MMBV3700LT1
MPN3700
SILICON PIN
SWITCHING DIODES
Long Reverse Recovery Time

trr = 300 ns (Typ)
Rugged PIN Structure Coupled with Wirebond
Construction for Optimum Reliability
Low Series Resistance @ 100 MHz

RS = 0.7 Ohms (Typ) @ IF = 10 mAdc
Reverse Breakdown Voltage = 200 V (Min)
3
Cathode

SOT 23 (TO 236AB)
1
Anode
SOT23
2
Cathode
1
Anode
TO92
1
2
CASE 18202, STYLE 1

TO92 (TO226AC)
MAXIMUM RATINGS
Rating
Symbol
Reverse Voltage
VR

@ TA = 25C
Derate above 25C
PD
MPN3700
MMBV3700LT1
200
Vdc
280
2.8
Unit
200
2.0
mW
mW/C
TJ
+125
Tstg
55 to +150
DEVICE MARKING
MMBV3700LT1 = 4R

Symbol
Min
Typ
Max
Unit

(IR = 10 Adc)
V(BR)R
200
Vdc
Diode Capacitance
(VR = 20 Vdc, f = 1.0 MHz)
CT
1.0
pF

(IF = 10 mAdc)
RS
0.7
1.0

(VR = 150 Vdc)
IR
0.1
Adc

(IF = IR = 10 mAdc)
trr
300
ns
Characteristic
5142
MMBV3700LT1 MPN3700
800
700
2.8
3.2
TA = 25C
2.4
2.0
1.6
1.2
0.8
2.0
6.0
4.0
8.0
10
12
14
400
TA = 25C
300
200
16
0.7
0.8
0.9
1.0
10
8.0
6.0
100
40
4.0
TA = 25C
2.0
1.0
0.8
0.6
0.4
500
100
0.4
0
600
0.2
10
4.0
VR = 15 Vdc
1.0
0.4
0.1
0.04
0.01
0.004
0.1
10
20
30
40
50
0.001
60
20
+20
+60
+100
+140
5143
MOTOROLA
SOD-123 Schottky Barrier Diodes
MMSD301T1
MMSD701T1
The MMSD301T1, and MMSD701T1 devices are spinoffs of our popular

MMBD301LT1, and MMBD701LT1 SOT23 devices. They are designed for
highefficiency UHF and VHF detector applications. Readily available to many other
fast switching RF and digital applications.

Low Reverse Leakage
1
Cathode
2
Anode
CASE 42504, STYLE 1

SOD123
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VR
30
70
Vdc

TA = 25C
PF
225
mW
TJ
55 to +125
Tstg
55 to +150
Reverse Voltage
MMSD301T1
MMSD701T1
DEVICE MARKING
MMSD301T1 = XT, MMSD701T1 = XH

Characteristic
(IR = 10 A)
Diode Capacitance
(VR = 0, f = 1.0 MHz, Note 1)
Symbol
Typ
Max
30
70
0.9
0.5
1.5
1.0
0.9
0.5
1.5
1.0
13
9.0
200
200
0.38
0.52
0.42
0.7
0.45
0.6
0.5
1.0
V(BR)R
MMSD301T1
MMSD701T1
MMSD301T1
MMSD701T1
Reverse Leakage
(VR = 25 V)
(VR = 35 V)
MMSD301T1
MMSD701T1
Unit
Volts
CT
MMSD301T1
MMSD701T1
Total Capacitance
(VR = 15 Volts, f = 1.0 MHz)
(VR = 20 Volts, f = 1.0 MHz)
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mA)
(IF = 1.0 mAdc)
(IF = 10 mA)
Min
pF
CT
pF
IR
VF
MMSD301T1
MMSD701T1
nAdc
nAdc
Vdc
(Replaces MMSD101T1/D)
5144
MMSD301T1 MMSD701T1
MMSD301T1
2.8
500
MMSD301T1
f = 1.0 MHz
2.4
2.0
1.6
1.2
0.8
0.4
0
MMSD301T1
400
KRAKAUER METHOD
300
200
100
0
0
3.0
6.0
9.0
12
15
18
21
24
27
30
20
40
60
30
50
70
80
90
100
10
100
MMSD301T1
MMSD301T1
10
TA = 100C
1.0
TA = 75C
0.1
TA = 85C
1.0
TA = 25C
0.01
TA = 40C
10
0.001
TA = 25C
0.1
0
6.0
12
18
24
30
0.2
0.4
0.6
0.8
1.0
1.2
5145
MMSD301T1 MMSD701T1
MMSD701T1
2.0
500
MMSD701T1
f = 1.0 MHz
1.6
1.2
0.8
0.4
MMSD701T1
400
KRAKAUER METHOD
300
200
100
0
0
5.0
10
15
20
25
30
35
40
45
50
10
80
90
100
10
100
MMSD701T1
MMSD701T1
30
50
70
40
60
20
TA = 100C
1.0
TA = 75C
0.1
10
TA = 85C
TA = 40C
1.0
0.01
TA = 25C
0.001
0.1
0
10
20
30
5146
TA = 25C
40
50
0.2
0.4
0.8
1.2
1.6
2.0
MOTOROLA
Switching Diode
MMSD914T1
The switching diode has the following features:
SOD123 Surface Mount Package

High Breakdown Voltage
Fast Speed Switching Time
1
Cathode
2
Anode
1
CASE 42504, STYLE 1

SOD123
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VR
100
Vdc
IF
200
mAdc
IFM(surge)
500
mAdc
Symbol
Max
Unit
Total Device Dissipation FR5 Board(1)

TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
RqJA
556
C/W
PD
300
mW
2.4
mW/C
RqJA
417
C/W
TJ, Tstg
55 to +150
DEVICE MARKING
MMSD914T1 = 5D
Characteristic

Derate above 25C

Characteristic
Symbol
Min
Max
Unit
V(BR)
100
Vdc
IR
25
5.0
nAdc
mAdc
VF
1000
mVdc
Diode Capacitance (VR = 0 Vdc, f = 1.0 MHz)
CD
4.0
pF
trr
4.0
ns
OFF CHARACTERISTICS
Reverse Breakdown Voltage (IBR = 100 Adc)
(VR = 75 Vdc)
1. FR5 = 1.0 x 0.75 x 0.062 in.

REV 2
5147
MMSD914T1
820
+10 V
2k
100 H
0.1 F
tr
IF
0.1 F
tp
IF
trr
10%
DUT
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
90%
iR(REC) = 1 mA
IR
VR
OUTPUT PULSE
at iR(REC) = 1 mA)
INPUT SIGNAL
Notes: 3. tp trr
100
10
TA = 150C
10
TA = 85C
TA = 40C
1.0
TA = 25C
TA = 125C
1.0
TA = 85C
0.1
TA = 55C
0.01
TA = 25C
0.1
0.2
0.4
0.6
0.8
1.0
0.001
1.2
10
20
30
40
50
0.68
0.64
0.60
0.56
0.52
5148
MOTOROLA
Silicon Pin Diode
MPN3404
This device is designed primarily for VHF band switching applications but is also
suitable for use in generalpurpose switching circuits. It is supplied in a costeffective
TO92 type plastic package for economical, highvolume consumer and industrial
requirements.
SILICON PIN
SWITCHING DIODE
Rugged PIN Structure Coupled with Wirebond

Construction for Optimum Reliability
Low Series Resistance @ 100 MHz
RS = 0.7 Ohms (Typ) @ IF = 10 mAdc
Sturdy TO92 Style Package for Handling Ease
1
Anode
2
Cathode
1
2
CASE 18202, STYLE 1

TO92 (TO226AC)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
20
Vdc
Forward Power Dissipation @ TA = 25C

Derate above 25C
PD
400
4.0
mW
mW/C
TJ
+125
Tstg
55 to +150

Symbol
Min
Typ
Max
Unit

(IR = 10 Adc)
V(BR)R
20
Vdc
Diode Capacitance
(VR = 15 Vdc, f = 1.0 MHz)
CT
1.3
2.0
pF

(IF = 10 mAdc)
RS
0.7
0.85

(VR = 15 Vdc)
IR
0.1
Adc
Characteristic
5149
MPN3404
50
1.6
1.8
1.4
1.2
1.0
0.8
40
30
TA = 25C
20
10
0.6
0.4
2.0
4.0
6.0
8.0
10
12
0
0.5
14
0.6
0.7
0.9
1.0
+100
+140
0.8
10
100
5.0
40
7.0
TA = 25C
4.0
3.0
2.0
10
4.0
VR = 15 Vdc
1.0
0.4
0.1
0.04
0.01
0.004
1.0
+3.0
3.0
6.0
9.0
12
15
5150
18
21
0.001
60
20
+20
+60
MOTOROLA

Common Cathode
MSD6100
Anode 1
2 Anode
1
2
CASE 2904, STYLE 3

TO92 (TO226AA)
3 Cathode

Rating
Symbol
Value
Unit
Reverse Voltage
VR
100
Vdc
Recurrent Peak Forward Current
IF
200
mAdc
IFM(surge)
500
mAdc

Derate above 25C
PD(1)
625
5.0
mW
mW/C

Temperature Range
TJ, Tstg(1)
55 to +135

(Pulse Width = 10 sec)

Characteristic
Breakdown Voltage
(I(BR) = 100 Adc)
Symbol
Min
Max
Unit
V(BR)
100
Vdc
5.0
0.1
50
0.55
0.67
0.75
0.7
0.82
1.1
Adc
Reverse Current
(VR = 100 Vdc)
(VR = 50 Vdc)
(VR = 50 Vdc, TA = 125C)
IR
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 100 mAdc)
VF
Capacitance
(VR = 0)
1.5
pF

(IF = IR = 10 mAdc, VR = 5.0 Vdc, irr = 1.0 mAdc)
trr
4.0
ns
Vdc
1. Continuous package improvements have enhanced these guaranteed Maximum Ratings as follows: PD = 1.0 W @ TC = 25C,
Derate above 25C 8.0 mW/C, TJ = 65 to +150C, JC = 125C/W.
5151
MSD6100
10
100
TA = 150C
TA = 85C
10
TA = 40C
1.0
TA = 25C
TA = 125C
1.0
TA = 85C
0.1
TA = 55C
0.01
TA = 25C
0.001
0.1
0.2
0.4
0.6
0.8
1.0
1.2
10
20
30
40
50
1.0
0.9
0.8
0.7
0.6
5152
MOTOROLA
Dual Diode
Common Anode
MSD6150
3 Anode
1
2
CASE 2904, STYLE 4

TO92 (TO226AA)
Cathode 1
2 Cathode

Rating
Symbol
Value
Unit
Reverse Voltage
VR
70
Vdc
Peak Forward Recurrent Current
IF
200
mAdc
IFM(surge)
500
mAdc
PD(1)
625
5.0
mW
mW/C
TJ, Tstg(1)
55 to +135

(Pulse Width = 10 sec)
Derate above 25C
Temperature Range

Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)
70
Vdc
Reverse Current
(VR = 50 Vdc)
IR
0.1
Adc
Forward Voltage
(IF = 10 mAdc)
VF
0.80
1.0
Vdc
Capacitance
(VR = 0)
5.0
8.0
pF

(IF = IR = 10 mAdc, VR = 5.0 Vdc, irr = 1.0 mAdc)
trr
100
ns
Breakdown Voltage
(I(BR) = 100 Adc)
1. Continuous package improvements have enhanced these guaranteed Maximum Ratings as follows: PD = 1.0 W @ TC = 25C,
Derate above 8.0 mW/C, PD = 10 W @ TC = 25C, Derate above 80 mW/C, TJ, Tstg = 55 to +150C, JC = 12.5C/W, JA = 125C.
5153
MSD6150
Curves Applicable to Each Cathode
10
100
TA = 150C
TA = 85C
10
TA = 40C
1.0
TA = 25C
TA = 125C
1.0
TA = 85C
0.1
TA = 55C
0.01
TA = 25C
0.001
0.1
0.2
0.4
0.6
0.8
1.0
1.2
10
20
30
40
50
1.75
1.5
1.25
1.0
0.75
5154
MOTOROLA
MV104
topoftheline application requiring backtoback diode configurations for minimum
signal distortion and detuning.
DUAL
VOLTAGE VARIABLE
CAPACITANCE DIODE

3742 pF @ VR = 3.0 Vdc (MV104)
Monolithic Chip Provides Near Perfect Matching Guaranteed 1.0%
(Max) Over Specified Tuning Range
1
2
Pin 1
A1
Pin 3
A2
Pin 2

TO92 (TO 226AA)

Symbol
Value
Unit
Reverse Voltage
Rating
VR
32
Vdc
Forward Current
IF
200
mAdc

Derate above 25C
PD
280
2.8
mW
mW/C
TJ
+125
Tstg
55 to +150

Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)R
32
Vdc
Reverse Voltage Leakage Current TA = 25C

(VR = 30 Vdc)
TA = 60C
IR
50
500
nAdc

(VR = 4.0 Vdc, f = 1.0 MHz)
TCC
280
ppm/C

(IR = 10 Adc)

VR = 3.0 Vdc, f = 1.0 MHz
pF
Device
MV104
Q, Figure of Merit
VR = 3.0 Vdc
f = 100 MHz

C3/C30
f = 1.0 MHz
Min
Max
Min
Typ
Min
Max
37
42
100
140
2.5
2.8
REV 1
5155
MV104
TYPICAL CHARACTERISTICS (Each Diode)
550
70
Q, FIGURE OF MERIT
100
40
20
350
250
TA = 25C
f = 100 MHz
150
10
0.3
0.5
2.0
1.0
3.0
5.0 7.0 10
20
3.0
9.0
6.0
12
15
18
24
21
27
Figure 1. Diode Capacitance (Each Diode)
Figure 2. Figure of Merit versus Voltage
1000
VR = 3.0 Vdc
TA = 25C
500
200
100
50
20
10
50
30
2000
Q, FIGURE OF MERIT
450
20
30
50
70
100
1.04
VR = 2.0 V
1.03
1.02
4.0 V
1.01
1.00
30 V
0.99
NORMALIZED to CT
at TA = 25C
0.98
0.97
0.96
75
200 300
30
50
25
+25
+50
+75
+100
+125
f, FREQUENCY (MHz)
Figure 4. Diode Capacitance versus Temperature
100
50
TA = 125C
20
10
5
TA = 75C
2
1
0.5
0.2
0.1
TA = 25C
0.05
0.02
0.01
5.0
10
15
20
25
30
Figure 5. Reverse Current versus Reverse Voltage
5156
MOTOROLA
Silicon Hyper-Abrupt Tuning Diodes
MV1403
MV1404
MV1405
These devices are designed with high capacitance and a capacitance change of
greater than TEN TIMES for a bias change from 2.0 to 10 volts. They provide tuning
over broad frequency ranges; tune AM radio broadcast band, general AFC and tuning
applications in lower RF frequencies.
High Capacitance: 120250 pF
Large Capacitance Change with Small Bias Change
120 250 pF
12 VOLTS
HIGH TUNING RATIO
VOLTAGEVARIABLE
CAPACITANCE DIODES
Guaranteed High Q
Available in Standard Axial Glass Packages
2
Anode
1
Cathode
2
MAXIMUM RATINGS
Symbol
Value
Unit
Reverse Voltage
Rating
VR
12
Vdc
Forward Current
IF
250
mAdc

Derate above 25C
PD
400
2.67
mW
mW/C
TJ
+125
Tstg
65 to + 200
CASE 5102
(DO204AA)

Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)R
12
Vdc

(VR = 10 Vdc, TA = 25C)
IR
0.1
Adc
Series Inductance
(f = 250 MHz, Lead Length 1/16)
LS
5.0
nH
Case Capacitance
(f = 1.0 MHz, Lead Length 1/16)
CC
0.25
pF

(IR = 10 Adc)
Device
MV1403
MV1404
MV1405
Q, Figure of Merit
TR, Tuning Ratio
VR = 2.0 Vdc, f = 1.0 MHz

pF
VR = 2.0 Vdc,
f = 1.0 MHz
C1/C10
f = 1.0 MHz
C2/C10
f = 1.0 MHz
Min
Nom
Max
Min
Min
Min
140
96
200
175
120
250
210
144
300
200
200
200
10
10
10
5157
MV1403 MV1404 MV1405
500
TA = 25C
f = 1 MHz
300
200
100
MV1405
MV1403
50
MV1404
30
20
10
0
8
5
3
4
6
7
1.08
1.04
VR = 2 Vdc
1.02
1
0.98
0.96
0.94
0.92
50
10
f = 1.0 MHz
1.06
25
25
50
75
100
125
150

Reverse Voltage

Ambient Temperature
1000
Q, FIGURE OF MERIT
VR = 4 Vdc
VR = 6 Vdc
VR = 2 Vdc
100
10
20
5
10
f, FREQUENCY (MHz)
50
100
5158
MOTOROLA
MV1626 thru
MV1650
These epitaxial passivated tuning diodes are designed for AFC applications in
radio, TV, and general electronictuning.
Maximum Working Voltage of 20 V
Excellent Q Factor at High Frequencies
6.8 100 pF
20 VOLTS
VOLTAGEVARIABLE
CAPACITANCE DIODES
SolidState Reliability to Replace Mechanical Tuning Methods
2
Anode
1
Cathode
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
20
Vdc
Forward Current
IF
250
mAdc

Derate above 25C
PD
400
2.67
mW
mW/C
TJ
+175
Tstg
65 to + 200
CASE 5102
DO204AA (DO7)

Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)R
20
Vdc

(VR = 15 Vdc, TA = 25C)
IR
0.10
Adc
Series Inductance
(f = 250 MHz, Lead Length 1/16)
LS
4.0
nH
Case Capacitance
(f = 1.0 MHz, Lead Length 1/16)
CC
0.17
pF

(IR = 10 Adc)

VR = 4.0 Vdc, f = 1.0 MHz
pF
Device
MV1626
MV1628
MV1630
MV1634
MV1638
MV1648
MV1650
Q, Figure of Merit
VR = 4.0 Vdc,
f = 50 MHz
TR, Tuning Ratio

C2/C20
f = 1.0 MHz
Min
Nom
Max
Typ
Min
Max
10.8
13.5
16.2
19.8
29.7
73.8
90.0
12.0
15.0
18.0
22.0
33.0
82.0
100.0
13.2
16.5
19.8
24.2
36.3
90.2
110.0
300
250
250
250
200
150
150
2.0
2.0
2.0
2.0
2.0
2.0
2.0
3.2
3.2
3.2
3.2
3.2
3.2
3.2
5159
MOTOROLA
MV7005T1
This silicon tuning diode is designed for use in high capacitance, hightuning ratio
SOT223 PACKAGE
HIGH CAPACITANCE
VOLTAGE VARIABLE DIODE
SURFACE MOUNT

damage to the die.
2
3
1
ANODE
2, 4
CATHODE
CASE 318E 04, STYLE 2

SOT 223 (TO 261AA)
MAXIMUM RATINGS
Rating
Reverse Voltage
Symbol
Value
Unit
VR
15
Vdc
Forward Current
IF
50
mAdc

Derate above 25C
PD
800
6.4
mW
mW/C
TJ
+125
Tstg
55 to +125

1. FR-4 board, 0.0625 in2, 2 oz. copper.
DEVICE MARKING
MV7005T1 = V7005

Characteristic
Symbol
Min
Max
Unit
V(BR)R
15
Vdc

(VR = 9.0 Vdc)
IR
100
nAdc
Diode Capacitance
(VR = 1.0 Vdc, f = 1.0 MHz)
CT
400
520
pF

(f = 1.0 MHz)
CR
12
150

(IR = 10 Adc)
Figure of Merit
(VR = 1.0 Vdc, f = 1.0 MHz)
REV 2
5160
MV7005T1
1000
500
100
f = 1.0 MHz
TA = 25C
10
1.06
VR = 1.0 Vdc
1.04
1.02
1.00
0.98
0.96
0.94
50
VR = 9.0 Vdc
25
+25
+50
+75
+100

Reverse Voltage

Ambient Temperature
+125
Q, FIGURE OF MERIT (x 100)
100
f = 1.0 MHz
TA = 25C
50
10
5
3
10
20
5161
MOTOROLA
MV7404T1
Silicon Hyper-Abrupt Tuning Diode
This silicon tuning diode is designed for high capacitance and a tuning ratio of
greater than 10 times over a bias range of 2.0 to 10 volts. It provides tuning over a
broad frequency range from the AM broadcast band to 100 MHz. The device is
housed in the SOT-223 package which is designed for medium power surface mount
applications.
SOT223 PACKAGE
HIGH TUNING RATIO
VOLTAGE VARIABLE
SURFACE MOUNT
DIODE
High Capacitance
Large Capacitance Change with Small Bias Change
Guaranteed High Q
SOT223 package ensures level mounting which results in improved thermal conduction and allows visual inspection of soldered joints. The formed
damage to the die.
1
ANODE
2
3
CASE 318E 04, STYLE 2

SOT 223 (TO 261AA)
2, 4
CATHODE

Symbol
Value
Unit
Reverse Voltage
VR
12
Vdc
Forward Current
IF
250
mAdc

Derate above 25C
PD
800
6.4
mW
mW/C
TJ, Tstg
55 to +125
TL
260
10
C
Sec
Rating

Lead Temperature for Soldering Purposes, 1/6 from case
Time in Solder Bath
1. FR-4 board, 0.0625 in2, 2 oz. copper.
DEVICE MARKING
MV7404T1 = V7404

Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)R
12
Vdc

(VR = 10 Vdc, f = 1.0 MHz)
IR
100
nAdc
Diode Capacitance
(VR = 2.0 Vdc, f = 1.0 MHz)
CT
96
120
144
pF
Figure of Merit
(VR = 2.0 Vdc, f = 1.0 MHz)
200
Tuning Ratio C2/C10

(f = 1.0 MHz)
TR
10

(IR = 10 Adc)
REV 1
5162
MV7404T1
500
TA = 25C
f = 1 MHz
200
100
50
20
10
5
8
4
6
10
1.08
f = 1.0 MHz
1.06
1.04
VR = 2 Vdc
1.02
1
0.98
0.96
0.94
0.92
50
25
25
50
75
100
125
150

Reverse Voltage

Ambient Temperature
1000
Q, FIGURE OF MERIT
VR = 4 Vdc
VR = 6 Vdc
VR = 2 Vdc
100
10
20
5
10
f, FREQUENCY (MHz)
50
100
5163
5164
Section 6

61

Embossed Tape and Reel is used to facilitate automatic pick and place equipment feed requirements. The tape is used as the
shipping container for various products and requires a minimum of handling. The antistatic/conductive tape provides a secure
cavity for the product when sealed with the peelback cover tape.
SOD123, SC59, SC70/SOT323, SC70ML/SOT363,

SOT23, TSOP6, in 8 mm Tape
SOT223 in 12 mm Tape
SO14, SO16 in 16 mm Tape
Two Reel Sizes Available (7 and 13)

Used for Automatic Pick and Place Feed Systems
Minimizes Product Handling
EIA 481, 1, 2
Use the standard device title and add the required suffix as listed in the option table on the following page. Note that the individual
reels have a finite number of devices depending on the type of product contained in the tape. Also note the minimum lot size is
one full reel for each line item, and orders are required to be in increments of the single reel quantity.
SOD123
SC59, SC70/SOT323, SOT23
8 mm
8 mm
SOT223
SC70ML/SOT363, TSOP6
T1 ORIENTATION
8 mm
SO14, 16
12 mm
16 mm
SC70ML/SOT363
T2 ORIENTATION
DIRECTION
8 mm
OF FEED
EMBOSSED TAPE AND REEL ORDERING INFORMATION

Devices Per Reel
and Minimum
Order Quantity
Device
Suffix
(7)
3,000
T1
178
330
(7)
(13)
3,000
10,000
T1
T3
8.0 0.1 (.315 .004)
178
330
(7)
(13)
500
2,500
R1
R2
16
16
8.0 0.1 (.315 .004)
178
330
(7)
(13)
500
2,500
R1
R2
SOD123
8
8
4.0 0.1 (.157 .004)
178
330
(7)
(13)
3,000
10,000
T1
T3
SOT23
8
8
4.0 0.1 (.157 .004)
178
330
(7)
(13)
3,000
10,000
T1
T3
SOT223
12
12
8.0 0.1 (.315 .004)
178
330
(7)
(13)
1,000
4,000
T1
T3
SC70ML/SOT363
8
8
4.0 0.1 (.157 .004)
178
178
(7)
(7)
3,000
3,000
T1
T2
TSOP6
4.0 0.1 (.157 .004)
178
(7)
3,000
T1
Package
Tape Width
(mm)
Pitch
mm
(inch)
SC59
4.0 0.1 (.157 .004)
178
SC70/SOT323
8
8
4.0 0.1 (.157 .004)
SO14
16
16
SO16

62
Reel Size
mm
(inch)
EMBOSSED TAPE AND REEL DATA FOR DISCRETES

CARRIER TAPE SPECIFICATIONS
P0
P2
10 Pitches Cumulative Tolerance on Tape

0.2 mm
( 0.008)
E
Top Cover
Tape
A0
K0
B1
B0
See
Note 1
For Machine Reference Only

Including Draft and RADII
Concentric Around B0
D1
For Components
2.0 mm x 1.2 mm and Larger
Center Lines
of Cavity
Embossment
User Direction of Feed

* Top Cover Tape
Thickness (t1)
0.10 mm
(.004) Max.
Bar Code Label

R Min
Tape and Components
Shall Pass Around Radius R
Without Damage
Bending Radius
10
Embossed Carrier
100 mm
(3.937)
Maximum Component Rotation
Embossment
1 mm Max
Typical Component
Cavity Center Line
Tape
1 mm
(.039) Max
Typical Component
Center Line
250 mm
(9.843)
Camber (Top View)

Allowable Camber To Be 1 mm/100 mm Nonaccumulative Over 250 mm
DIMENSIONS
Tape
Size
B1 Max
D1
P0
P2
R Min
T Max
W Max
8 mm
4.55 mm
(.179)
1.0 Min
(.039)
1.75 0.1 mm
(.069 .004)
3.5 0.05 mm
(.138 .002)
2.4 mm Max
(.094)
4.0 0.1 mm
(.157 .004)
2.0 0.1 mm
(.079 .002)
25 mm
(.98)
0.6 mm
(.024)
8.3 mm
(.327)
12 mm
8.2 mm
(.323)
1.5 + 0.1 mm
0.0
( 0 9 + .004
004
(.059
0.0)
5.5 0.05 mm
(.217 .002)
6.4 mm Max
(.252)
16 mm
12.1 mm
(.476)
7.5 0.10 mm
(.295 .004)
7.9 mm Max
(.311)
16.3 mm
(.642)
24 mm
20.1 mm
(.791)
11.5 0.1 mm
(.453 .004)
11.9 mm Max
(.468)
24.3 mm
(.957)
1.5 mm Min
(.060)
30 mm
(1.18)
12 .30 mm
(.470 .012)
Metric dimensions govern English are in parentheses for reference only.

NOTE 1: A0, B0, and K0 are determined by component size. The clearance between the components and the cavity must be within .05 mm min. to .50 mm max.,
NOTE 1: the component cannot rotate more than 10 within the determined cavity.
NOTE 2: If B1 exceeds 4.2 mm (.165) for 8 mm embossed tape, the tape may not feed through all tape feeders.
NOTE 3: Pitch information is contained in the Embossed Tape and Reel Ordering Information on pg. 5.123.

63
EMBOSSED TAPE AND REEL DATA FOR DISCRETES

T Max
Outside Dimension
Measured at Edge
1.5 mm Min
(.06)
A
13.0 mm 0.5 mm
(.512 .002)
20.2 mm Min
(.795)
50 mm Min
(1.969)
Full Radius
Size
A Max
8 mm
330 mm
(12.992)
8.4 mm + 1.5 mm, 0.0

(.33 + .059, 0.00)
14.4 mm
(.56)
12 mm
330 mm
(12.992)
12.4 mm + 2.0 mm, 0.0

(.49 + .079, 0.00)
18.4 mm
(.72)
16 mm
360 mm
(14.173)
16.4 mm + 2.0 mm, 0.0

(.646 + .078, 0.00)
22.4 mm
(.882)
24 mm
360 mm
(14.173)
24.4 mm + 2.0 mm, 0.0

(.961 + .070, 0.00)
30.4 mm
(1.197)
Inside Dimension
Measured Near Hub
T Max
Reel Dimensions
Metric Dimensions Govern English are in parentheses for reference only

64
TO92 EIA, IEC, EIAJ

Radial Tape in Fan Fold
Box or On Reel
TO92
RADIAL
TAPE IN
FAN FOLD
BOX OR
ON REEL
Radial tape in fan fold box or on reel of the reliable TO92 package are
the best methods of capturing devices for automatic insertion in printed
circuit boards. These methods of taping are compatible with various
equipment for active and passive component insertion.
Available in Fan Fold Box

Available on 365 mm Reels
Accommodates All Standard Inserters
Allows Flexible Circuit Board Layout
2.5 mm Pin Spacing for Soldering
EIA468, IEC 2862, EIAJ RC1008B
Ordering Notes:
When ordering radial tape in fan fold box or on reel, specify the style per
Figures 3 through 8. Add the suffix RLR and Style to the device title, i.e.
MPS3904RLRA. This will be a standard MPS3904 radial taped and
supplied on a reel per Figure 9.
Fan Fold Box Information Order in increments of 2000.
Reel Information Order in increments of 2000.
US/European Suffix Conversions

US
EUROPE
RLRA
RL
RLRE
RL1
RLRM
ZL1
Packaging Specifications
65
TO92 EIA RADIAL TAPE IN FAN FOLD BOX OR ON REEL

H2A
H2A
H2B
H2B
H
W2
H4 H5
T1
L1
H1
W1 W
T
T2
F1
F2
P2
P2
P1
Figure 1. Device Positioning on Tape
Specification
Inches
Symbol
Item
Millimeter
Min
Max
Min
Max
Tape Feedhole Diameter
0.1496
0.1653
3.8
4.2
D2
Component Lead Thickness Dimension
0.015
0.020
0.38
0.51
Component Lead Pitch
0.0945
0.110
2.4
2.8
.059
.156
1.5
4.0
0.3346
0.3741
8.5
9.5
Deflection Left or Right
0.039
1.0
Deflection Front or Rear
0.051
1.0
Feedhole to Bottom of Component
0.7086
0.768
18
19.5
Feedhole to Seating Plane
0.610
0.649
15.5
16.5
F1, F2
H
H1
H2A
H2B
H4
H5
L
Bottom of Component to Seating Plane

Feedhole Location
Defective Unit Clipped Dimension
0.3346
0.433
8.5
11
L1
Lead Wire Enclosure
0.09842
2.5
Feedhole Pitch
0.4921
0.5079
12.5
12.9
P1
Feedhole Center to Center Lead
0.2342
0.2658
5.95
6.75
P2
First Lead Spacing Dimension
0.1397
0.1556
3.55
3.95
0.06
0.08
0.15
0.20
Adhesive Tape Thickness
T1
Overall Taped Package Thickness
0.0567
1.44
T2
Carrier Strip Thickness
0.014
0.027
0.35
0.65
Carrier Strip Width
0.6889
0.7481
17.5
19
W1
Adhesive Tape Width
0.2165
0.2841
5.5
6.3
W2
Adhesive Tape Position
.0059
0.01968
.15
0.5
NOTES:
1. Maximum alignment deviation between leads not to be greater than 0.2 mm.
2. Defective components shall be clipped from the carrier tape such that the remaining protrusion (L) does not exceed a maximum of 11 mm.
3. Component lead to tape adhesion must meet the pull test requirements established in Figures 5, 6 and 7.
4. Maximum noncumulative variation between tape feed holes shall not exceed 1 mm in 20 pitches.
5. Holddown tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive.
6. No more than 1 consecutive missing component is permitted.
7. A tape trailer and leader, having at least three feed holes is required before the first and after the last component.
8. Splices will not interfere with the sprocket feed holes.
66

FAN FOLD BOX STYLES
ADHESIVE TAPE ON
TOP SIDE
FLAT SIDE
ADHESIVE TAPE ON
TOP SIDE
ROUNDED SIDE
CARRIER
STRIP
CARRIER
STRIP
Figure 2. Style M
252 mm
9.92
FLAT SIDE OF TRANSISTOR

AND ADHESIVE TAPE VISIBLE.
Style M fan fold box is equivalent to styles E and F of
reel pack dependent on feed orientation from box.
330 mm
13
MAX
ROUNDED SIDE OF TRANSISTOR AND

ADHESIVE TAPE VISIBLE.
Style P fan fold box is equivalent to styles A and B of
reel pack dependent on feed orientation from box.
Figure 3. Style P
MAX
58 mm
2.28
MAX
Figure 4. Fan Fold Box Dimensions
ADHESION PULL TESTS

500 GRAM PULL FORCE
70 GRAM
PULL FORCE
100 GRAM
PULL FORCE
16 mm
16 mm
HOLDING
FIXTURE
The component shall not pull free with a 300 gram

load applied to the leads for 3 1 second.
Figure 5. Test #1
HOLDING
FIXTURE
The component shall not pull free with a 70 gram

load applied to the leads for 3 1 second.
Figure 6. Test #2
HOLDING
FIXTURE
There shall be no deviation in the leads and
no component leads shall be pulled free of
the tape with a 500 gram load applied to the
component body for 3 1 second.
Figure 7. Test #3
67

REEL STYLES
CORE DIA.
82mm 1mm
ARBOR HOLE DIA.

30.5mm 0.25mm
MARKING NOTE
HUB RECESS
76.2mm 1mm
RECESS DEPTH
9.5mm MIN
365mm + 3, 0mm
38.1mm 1mm
48 mm
MAX
Material used must not cause deterioration of components or degrade lead solderability
Figure 8. Reel Specifications
ADHESIVE TAPE ON REVERSE SIDE

CARRIER STRIP
CARRIER STRIP
ROUNDED
SIDE
FLAT SIDE
ADHESIVE TAPE
FEED
FEED
Rounded side of transistor and adhesive tape visible.
Flat side of transistor and carrier strip visible

(adhesive tape on reverse side).
Figure 9. Style A
Figure 10. Style B
ADHESIVE TAPE ON REVERSE SIDE

CARRIER STRIP
CARRIER STRIP
FLAT SIDE
ROUNDED
SIDE
ADHESIVE TAPE
FEED
FEED
Flat side of transistor and adhesive tape visible.
Figure 11. Style E
68
Rounded side of transistor and carrier strip visible

(adhesive tape on reverse side).
Figure 12. Style F
Section 7
Surface Mount
Information
In Brief . . .
Surface Mount Technology is now being utilized to offer
answers to many problems that have been created in the use
of insertion technology.
Limitations have been reached with insertion packages
and PC board technology. Surface Mount Technology offers
the opportunity to continue to advance the stateoftheart
designs that cannot be accomplished with insertion technology.
Surface Mount Packages allow more optimum device
performance with the smaller Surface Mount Configuration.
Internal lead lengths, parasitic capacitance and inductance
that placed limitations on chip performance have been
reduced.
The lower profile of Surface Mount Packages allows more
boards to be utilized in a given amount of space. They are
stacked closer together and utilize less total volume than insertion populated PC boards.
Printed circuit costs are lowered with the reduction of the
number of board layers required. The elimination or reduction of the number of plated through holes in the board contribute significantly to lower PC board prices.
Surface Mount assembly does not require the preparation
of components that is common on insertion technology lines.
Surface Mount components are sent directly to the assembly
line, eliminating an intermediate step.
Automatic placement equipment is available that can
place Surface Mount components at the rate of a few thousand per hour to hundreds of thousands of components per
hour.
Surface Mount Technology is cost effective, allowing the
manufacturer the opportunity to produce smaller units and
offer increased functions with the same size product.
Surface Mount Information

79
INFORMATION FOR USING SURFACE MOUNT PACKAGES

RECOMMENDED FOOTPRINTS FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to ensure proper solder connection inter-
face between the board and the package. With the correct
pad geometry, the packages will self align when subjected to
a solder reflow process.
POWER DISSIPATION FOR A SURFACE MOUNT DEVICE
PD =
TJ(max) TA
RJA
The values for the equation are found in the maximum

ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25C, one can
calculate the power dissipation of the device. For example,
for a SOT223 device, PD is calculated as follows.
PD = 150C 25C = 800 milliwatts
156C/W
The 156C/W for the SOT223 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 800 milliwatts. There
are other alternatives to achieving higher power dissipation
from the surface mount packages. One is to increase the
area of the drain/collector pad. By increasing the area of the
drain/collector pad, the power dissipation can be increased.
Although the power dissipation can almost be doubled with

this method, area is taken up on the printed circuit board
which can defeat the purpose of using surface mount
technology. For example, a graph of RJA versus drain pad
area is shown in Figure 1.
Another alternative would be to use a ceramic substrate or
an aluminum core board such as Thermal Clad. Using a
board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.
RJA , THERMAL RESISTANCE, JUNCTION
TO AMBIENT (C/W)
The power dissipation for a surface mount device is a function of the drain/collector pad size. These can vary from the
minimum pad size for soldering to a pad size given for
maximum power dissipation. Power dissipation for a surface
mount device is determined by TJ(max), the maximum rated
junction temperature of the die, RJA, the thermal resistance
from the device junction to ambient, and the operating
temperature, TA. Using the values provided on the data
sheet, PD can be calculated as follows:
160
140
Board Material = 0.0625

G10/FR4, 2 oz Copper
TA = 25C
0.8 Watts
120
1.25 Watts*
1.5 Watts
100
80
0.0
*Mounted on the DPAK footprint

0.2
0.4
0.6
A, AREA (SQUARE INCHES)
0.8
1.0
Figure 1. Thermal Resistance versus Drain Pad

Area for the SOT223 Package (Typical)
SOLDER STENCIL GUIDELINES

Prior to placing surface mount components onto a printed
circuit board, solder paste must be applied to the pads.
Solder stencils are used to screen the optimum amount.
These stencils are typically 0.008 inches thick and may be
made of brass or stainless steel. For packages such as the

710
SOT23, SC59, SC70/SOT323, SC90/SOT416,

SOD123, SOT223, SOT363, SO14, SO16, and
TSOP6 packages, the stencil opening should be the same
as the pad size or a 1:1 registration.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to minimize the thermal stress to which the devices are subjected.
Always preheat the device.
The delta temperature between the preheat and soldering
should be 100C or less.*
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference should be a maximum of 10C.
The soldering temperature and time should not exceed

260C for more than 10 seconds.
When shifting from preheating to soldering, the maximum
temperature gradient shall be 5C or less.
After soldering has been completed, the device should be
allowed to cool naturally for at least three minutes.
Gradual cooling should be used since the use of forced
cooling will increase the temperature gradient and will
result in latent failure due to mechanical stress.
Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
TYPICAL SOLDER HEATING PROFILE

For any given circuit board, there will be a group of control
settings that will give the desired heat pattern. The operator
must set temperatures for several heating zones and a figure
for belt speed. Taken together, these control settings make
up a heating profile for that particular circuit board. On
machines controlled by a computer, the computer remembers these profiles from one operating session to the next.
Figure 2 shows a typical heating profile for use when
soldering a surface mount device to a printed circuit board.
This profile will vary among soldering systems, but it is a
good starting point. Factors that can affect the profile include
the type of soldering system in use, density and types of
components on the board, type of solder used, and the type
of board or substrate material being used. This profile shows
temperature versus time. The line on the graph shows the
STEP 1
PREHEAT
ZONE 1
RAMP
200C
STEP 2 STEP 3
VENT
HEATING
SOAK ZONES 2 & 5
RAMP
DESIRED CURVE FOR HIGH

MASS ASSEMBLIES
actual temperature that might be experienced on the surface

of a test board at or near a central solder joint. The two
profiles are based on a high density and a low density board.
The Vitronics SMD310 convection/infrared reflow soldering
system was used to generate this profile. The type of solder
used was 62/36/2 Tin Lead Silver with a melting point
between 177 189C. When this type of furnace is used for
solder reflow work, the circuit boards and solder joints tend to
heat first. The components on the board are then heated by
conduction. The circuit board, because it has a large surface
area, absorbs the thermal energy more efficiently, then
distributes this energy to the components. Because of this
effect, the main body of a component may be up to 30
degrees cooler than the adjacent solder joints.
STEP 4
HEATING
ZONES 3 & 6
SOAK
STEP 5
HEATING
ZONES 4 & 7
SPIKE
STEP 6
VENT
STEP 7
COOLING
205 TO 219C
PEAK AT
SOLDER JOINT
170C
160C
150C
150C
100C
140C
100C
SOLDER IS LIQUID FOR

40 TO 80 SECONDS
(DEPENDING ON
MASS OF ASSEMBLY)
DESIRED CURVE FOR LOW

MASS ASSEMBLIES
50C
TIME (3 TO 7 MINUTES TOTAL)
TMAX
Figure 2. Typical Solder Heating Profile

711
Footprints for Soldering

0.037
0.95
0.037
0.95
0.037
0.95
0.037
0.95
0.094
2.4
0.079
2.0
0.039
1.0
0.035
0.9
inches
0.031
0.8
0.031
0.8
mm
mm
SOT23
0.025
0.025
0.65
0.65
0.075
0.5 min. (3x)
1.9
0.035
0.9
0.028
1.4
inches
0.7
0.5
0.5 min. (3x)
SC59
inches
mm
SC70/SOT323
SOT 416/SC90
0.15
3.8
0.060
1.52
0.079
2.0
0.091
2.3
0.248
6.3
0.091
2.3
0.079
2.0
0.275
7.0
0.155
4.0
0.024
0.6
0.059
1.5
0.059
1.5
0.059
1.5
0.050
1.270
inches
inches
mm
mm
SOT223

712
SO14, SO16
2.36
0.093
4.19
0.165
1.22
0.048
0.4 mm (min)
0.91
0.036
mm
inches
0.65 mm 0.65 mm
0.5 mm (min)
1.9 mm
SOD123
SOT363
(SC70 6 LEAD)
0.094
2.4
0.037
0.95
0.074
1.9
0.037
0.95
0.028
0.7
0.039
1.0
inches
mm
TSOP6

713

714
Section 8
Package Outline
Dimensions
In Brief . . .
The following pages contain information on the various
packages referenced on the individual data sheets.
Information includes: a picture of the package, dimensions in
both millimeters and inches, the various pinout
configurations (styles), a cross reference for case numbers,
old JEDEC TO numbers, the new JEDEC TO designation,
and footprint dimensions for surface mount packages to
assist in board layout.
Package Outline Dimensions

81

Dimensions are in inches unless otherwise noted.
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
P
L
SEATING
PLANE
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
X X
G
H
V
C
SECTION XX
N
N
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
STYLE 2:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 15:
PIN 1. ANODE 1
2. CATHODE
3. ANODE 2
STYLE 3:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
STYLE 21:
PIN 1. COLLECTOR
2. EMITTER
3. BASE
STYLE 5:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 22:
PIN 1. SOURCE
2. GATE
3. DRAIN
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
0.250
0.080
0.105
0.100
0.115
0.135
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
6.35
2.04
2.66
2.54
2.93
3.43
STYLE 7:
PIN 1. SOURCE
2. DRAIN
3. GATE
STYLE 30:
PIN 1. DRAIN
2. GATE
3. SOURCE
CASE 02904
(TO226AA) TO92
PLASTIC
NOTES:
Y14.5M, 1982.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
DIMENSIONS D AND J APPLY BETWEEN L AND K
MIMIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
SEATING
PLANE
P
L
X X
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
D
G
V
1 2 3
N C
SECTION XX
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
INCHES
MIN
MAX
0.175
0.205
0.290
0.310
0.125
0.165
0.018
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.018
0.024
0.500
0.250
0.080
0.105
0.100
0.135
0.135
MILLIMETERS
MIN
MAX
4.44
5.21
7.37
7.87
3.18
4.19
0.46
0.56
0.41
0.48
1.15
1.39
2.42
2.66
0.46
0.61
12.70
6.35
2.04
2.66
2.54
3.43
3.43
STYLE 22:
PIN 1. SOURCE
2. GATE
3. DRAIN
CASE 02905
(TO226AE) TO92
1WATT PLASTIC

82
PACKAGE OUTLINE DIMENSIONS (continued)
B
NOTES:
1. PACKAGE CONTOUR OPTIONAL WITHIN DIA B
AND LENGTH A. HEAT SLUGS, IF ANY, SHALL BE
INCLUDED WITHIN THIS CYLINDER, BUT SHALL
NOT BE SUBJECT TO THE MIN LIMIT OF DIA B.
2. LEAD DIA NOT CONTROLLED IN ZONES F, TO
ALLOW FOR FLASH, LEAD FINISH BUILDUP,
AND MINOR IRREGULARITIES OTHER THAN
HEAT SLUGS.
D
K
F
A
DIM
A
B
D
F
K
F
K
MILLIMETERS
MIN
MAX
5.84
7.62
2.16
2.72
0.46
0.56
1.27
25.40
38.10
INCHES
MIN
MAX
0.230
0.300
0.085
0.107
0.018
0.022
0.050
1.000
1.500
All JEDEC dimensions and notes apply.
CASE 5102
(DO204AA)
DO7
SEATING
PLANE
SECTION XX
X X
D
G
H
V
C
N
NOTES:
Y14.5M, 1982.
3. CONTOUR OF PACKAGE BEYOND ZONE R IS
UNCONTROLLED.
DIMENSIONS D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIM K MINIMUM.
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.050 BSC
0.100 BSC
0.014
0.016
0.500
0.250
0.080
0.105
0.050
0.115
0.135
MILLIMETERS
MIN
MAX
4.45
5.21
4.32
5.33
3.18
4.49
0.41
0.56
0.407
0.482
1.27 BSC
3.54 BSC
0.36
0.41
12.70
6.35
2.03
2.66
1.27
2.93
3.43
STYLE 1:
PIN 1. ANODE
2. CATHODE
CASE 18202
(T0226AC) TO92
PLASTIC

83
NOTES:
Y14.5M, 1982.
3. MAXIUMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
A
L
3
B S
1
DIM
A
B
C
D
G
H
J
K
L
S
V
G
C
H
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
STYLE 12:
PIN 1. CATHODE
2. CATHODE
3. ANODE
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 18:
PIN 1. NO CONNECTION
2. CATHODE
3. ANODE
INCHES
MIN
MAX
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
0.0005 0.0040
0.0034 0.0070
0.0140 0.0285
0.0350 0.0401
0.0830 0.1039
0.0177 0.0236
STYLE 19:
PIN 1. CATHODE
2. ANODE
3. CATHODEANODE
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
STYLE 11:
PIN 1. ANODE
2. CATHODE
3. CATHODEANODE
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
CASE 31808
(TO236AB) SOT23
PLASTIC
NOTES:
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
L
3
S
2
DIM
A
B
C
D
G
H
J
K
L
S
B
1
D
G
C
H
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
MILLIMETERS
MIN
MAX
2.70
3.10
1.30
1.70
1.00
1.30
0.35
0.50
1.70
2.10
0.013
0.100
0.09
0.18
0.20
0.60
1.25
1.65
2.50
3.00
INCHES
MIN
MAX
0.1063 0.1220
0.0512 0.0669
0.0394 0.0511
0.0138 0.0196
0.0670 0.0826
0.0005 0.0040
0.0034 0.0070
0.0079 0.0236
0.0493 0.0649
0.0985 0.1181
STYLE 2:
PIN 1. N.C.
2. ANODE
3. CATHODE
STYLE 3:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 4:
PIN 1. N.C.
2. CATHODE
3. ANODE
STYLE 5:
PIN 1. CATHODE
2. CATHODE
3. ANODE
CASE 318D04
SC59

84
A
F
NOTES:
Y14.5M, 1982.
INCHES
DIM MIN
MAX
A
0.249
0.263
B
0.130
0.145
C
0.060
0.068
D
0.024
0.035
F
0.115
0.126
G
0.087
0.094
H 0.0008 0.0040
J
0.009
0.014
K
0.060
0.078
L
0.033
0.041
M
0_
10 _
S
0.264
0.287
B
1
D
L
G
J
C
0.08 (0003)
MILLIMETERS
MIN
MAX
6.30
6.70
3.30
3.70
1.50
1.75
0.60
0.89
2.90
3.20
2.20
2.40
0.020
0.100
0.24
0.35
1.50
2.00
0.85
1.05
0_
10 _
6.70
7.30
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
STYLE 2:
PIN 1.
2.
3.
4.
ANODE
CATHODE
NC
CATHODE
STYLE 3:
PIN 1.
2.
3.
4.
GATE
DRAIN
SOURCE
DRAIN
CASE 318E04
SOT223
A
NOTES:
Y14.5M, 1982.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
L
6
S
1
D
G
M
J
0.05 (0.002)
H
DIM
A
B
C
D
G
H
J
K
L
M
S
MILLIMETERS
MIN
MAX
2.90
3.10
1.30
1.70
0.90
1.10
0.25
0.50
0.85
1.05
0.013
0.100
0.10
0.26
0.20
0.60
1.25
1.55
0_
10 _
2.50
3.00
STYLE 1:
PIN 1.
2.
3.
4.
5.
6.
INCHES
MIN
MAX
0.1142 0.1220
0.0512 0.0669
0.0354 0.0433
0.0098 0.0197
0.0335 0.0413
0.0005 0.0040
0.0040 0.0102
0.0079 0.0236
0.0493 0.0610
0_
10 _
0.0985 0.1181
DRAIN
DRAIN
GATE
SOURCE
DRAIN
DRAIN
CASE 318G02
TSOP6
PLASTIC

85
A
L
NOTES:
Y14.5M, 1982.
S
1
DIM
A
B
C
D
G
H
J
K
L
N
R
S
V
V
G
R N
C
0.05 (0.002)
STYLE 2:
PIN 1. ANODE
2. N.C.
3. CATHODE
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 7:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
STYLE 9:
PIN 1. ANODE
2. CATHODE
3. CATHODEANODE
INCHES
MIN
MAX
0.071
0.087
0.045
0.053
0.035
0.049
0.012
0.016
0.047
0.055
0.000
0.004
0.004
0.010
0.017 REF
0.026 BSC
0.028 REF
0.031
0.039
0.079
0.087
0.012
0.016
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.90
1.25
0.30
0.40
1.20
1.40
0.00
0.10
0.10
0.25
0.425 REF
0.650 BSC
0.700 REF
0.80
1.00
2.00
2.20
0.30
0.40
STYLE 5:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 10:
PIN 1. CATHODE
2. ANODE
3. ANODECATHODE
CASE 41902
SC70/SOT323
NOTES:
Y14.5M, 1982.
G
V
DIM
A
B
C
D
G
H
J
K
N
S
V
D 6 PL
0.2 (0.008)
N
J
C
INCHES
MIN
MAX
0.071
0.087
0.045
0.053
0.031
0.043
0.004
0.012
0.026 BSC
0.004
0.004
0.010
0.004
0.012
0.008 REF
0.079
0.087
0.012
0.016
STYLE 1:
PIN 1.
2.
3.
4.
5.
6.
EMITTER 2
BASE 2
COLLECTOR 1
EMITTER 1
BASE 1
COLLECTOR 2
STYLE 6:
PIN 1.
2.
3.
4.
5.
6.
ANODE 2
N/C
CATHODE 1
ANODE 1
N/C
CATHODE 2
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.10
0.10
0.30
0.65 BSC
0.10
0.10
0.25
0.10
0.30
0.20 REF
2.00
2.20
0.30
0.40
CASE 419B-01
SOT363

86
NOTES:
Y14.5M, 1982.
DIM
A
B
C
D
E
H
J
K
INCHES
MIN
MAX
0.055
0.071
0.100
0.112
0.037
0.053
0.020
0.028
0.004
0.000
0.004
0.006
0.140
0.152
MILLIMETERS
MIN
MAX
1.40
1.80
2.55
2.85
0.95
1.35
0.50
0.70
0.25
0.00
0.10
0.15
3.55
3.85
STYLE 1:
PIN 1. CATHODE
2. ANODE
CASE 42504
SOD123
NOTES:
Y14.5M, 1982.
A
S
2
3
D 3 PL
0.20 (0.008)
G B
1
B
K
0.20 (0.008) A
MILLIMETERS
MIN
MAX
0.70
0.80
1.40
1.80
0.60
0.90
0.15
0.30
1.00 BSC
0.10
0.10
0.25
1.45
1.75
0.10
0.20
0.50 BSC
INCHES
MIN
MAX
0.028
0.031
0.055
0.071
0.024
0.035
0.006
0.012
0.039 BSC
0.004
0.004
0.010
0.057
0.069
0.004
0.008
0.020 BSC
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
C
L
DIM
A
B
C
D
G
H
J
K
L
S
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
CASE 46301
SOT416/SC90

87
14
NOTES:
1. LEADS WITHIN 0.13 (0.005) RADIUS OF TRUE
POSITION AT SEATING PLANE AT MAXIMUM
MATERIAL CONDITION.
2. DIMENSION L TO CENTER OF LEADS WHEN
FORMED PARALLEL.
3. DIMENSION B DOES NOT INCLUDE MOLD
FLASH.
4. ROUNDED CORNERS OPTIONAL.
B
1
A
F
DIM
A
B
C
D
F
G
H
J
K
L
M
N
L
C
J
N
H
SEATING
PLANE
K
M
INCHES
MIN
MAX
0.715
0.770
0.240
0.260
0.145
0.185
0.015
0.021
0.040
0.070
0.100 BSC
0.052
0.095
0.008
0.015
0.115
0.135
0.300 BSC
0_
10_
0.015
0.039
MILLIMETERS
MIN
MAX
18.16
19.56
6.10
6.60
3.69
4.69
0.38
0.53
1.02
1.78
2.54 BSC
1.32
2.41
0.20
0.38
2.92
3.43
7.62 BSC
0_
10_
0.39
1.01
CASE 64606
14PIN DIP
PLASTIC
NOTES:
Y14.5M, 1982.
3. DIMENSION L TO CENTER OF LEADS WHEN
FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD FLASH.
5. ROUNDED CORNERS OPTIONAL.
A
16
S
T
SEATING
PLANE
H
G
16 PL
0.25 (0.010)
T A
DIM
A
B
C
D
F
G
H
J
K
L
M
S
INCHES
MIN
MAX
0.740
0.770
0.250
0.270
0.145
0.175
0.015
0.021
0.040
0.70
0.100 BSC
0.050 BSC
0.008
0.015
0.110
0.130
0.295
0.305
0_
10 _
0.020
0.040
MILLIMETERS
MIN
MAX
18.80
19.55
6.35
6.85
3.69
4.44
0.39
0.53
1.02
1.77
2.54 BSC
1.27 BSC
0.21
0.38
2.80
3.30
7.50
7.74
0_
10 _
0.51
1.01
CASE 64808
16PIN DIP
PLASTIC

88
NOTES:
Y14.5M, 1982.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
A
14
B
1
P 7 PL
0.25 (0.010)
R X 45 _
T
0.25 (0.010)
D 14 PL
SEATING
PLANE
T B
DIM
A
B
C
D
F
G
J
K
M
P
R
MILLIMETERS
MIN
MAX
8.55
8.75
3.80
4.00
1.35
1.75
0.35
0.49
0.40
1.25
1.27 BSC
0.19
0.25
0.10
0.25
0_
7_
5.80
6.20
0.25
0.50
INCHES
MIN
MAX
0.337
0.344
0.150
0.157
0.054
0.068
0.014
0.019
0.016
0.049
0.050 BSC
0.008
0.009
0.004
0.009
0_
7_
0.228
0.244
0.010
0.019
CASE 751A03
SO14
PLASTIC
16
NOTES:
Y14.5M, 1982.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
8 PL
0.25 (0.010)
X 45 _
C
T
SEATING
PLANE
M
D
16 PL
0.25 (0.010)
T B
DIM
A
B
C
D
F
G
J
K
M
P
R
MILLIMETERS
MIN
MAX
9.80
10.00
3.80
4.00
1.35
1.75
0.35
0.49
0.40
1.25
1.27 BSC
0.19
0.25
0.10
0.25
0_
7_
5.80
6.20
0.25
0.50
INCHES
MIN
MAX
0.386
0.393
0.150
0.157
0.054
0.068
0.014
0.019
0.016
0.049
0.050 BSC
0.008
0.009
0.004
0.009
0_
7_
0.229
0.244
0.010
0.019
CASE 751B05
SO16
PLASTIC

89

810
Section 9
Reliability and
Quality Assurance
In Brief . . .
This Reliability and Quality Assurance section contains
information on the measurement of outgoing quality,
reliability data analysis, reliability stress test descriptions with
the applicable MILSTD methods, statistical process control
techniques, and quality assurance processing.
Reliability and Quality Assurance

911
OUTGOING QUALITY
The Average Outgoing Quality (AOQ) refers to the number
of devices per million that are outside the specification limits
at the time of shipment. Motorola has established Six Sigma
goals to improve its outgoing quality and will continue its error
free performance focus to achieve its goal of zero parts per
million (PPM) outgoing quality. Motorolas present quality level
has lead to vendor certification programs with many of its
customers. These programs ensure a level of quality which
allows the customer either to reduce or eliminate the need for
incoming inspections.
where:
= failure rate
2 = chisquare function
= (100 confidence level) / 100
d.f. = degrees of freedom = 2r + 2
r = number of failures
t = device hours
Chisquare values for 60% and 90% confidence intervals for
up to 12 failures are shown in Table 11.
Table 11 ChiSquare Table
ChiSquare Distribution Function
60% Confidence Level
AVERAGE OUTGOING QUALITY (AOQ)

CALCULATION
AOQ = (Process Average) D (Probability of Acceptance)
D (106) (PPM)
D Process Average =
Total Projected Reject Devices

Total Number of Devices
D Projected Reject Devices =
Defects in Sample
Sample Size
D Lot Size
D Total Number of Devices = Sum of units in each submitted lot

D Probability of Acceptance = 1
Number of Lots Rejected

Number of Lots Tested
D 106 = Conversion to parts per million (PPM)
RELIABILITY DATA ANALYSIS

Reliability is the probability that a semiconductor device will
perform its specified function in a given environment for a
specified period. In other words, reliability is quality over time
and environmental conditions. The most frequently used
reliability measure for semiconductor devices is the failure
rate ( ). The failure rate is obtained by dividing the number
of failures observed by the product of the number of devices
on test and the interval in hours, usually expressed as percent
per thousand hours or failures per billion device hours (FITS).
This is called a point estimate because it is obtained from
observations on a portion (sample) of the population of
devices.
To project from the sample to the population in general, one
must establish confidence intervals. The application of
confidence intervals is a statement of how confident one is
that the sample failure rate approximates that for the
population. To obtain failure rates at different confidence
levels, it is necessary to make use of specific probability
distributions. The chisquare (2) distribution that relates
observed and expected frequencies of an event is frequently
used to establish confidence intervals. The relationship
between failure rate and the chisquare distribution is as
follows:
2 (, d. f.)
=
2t

912
90% Confidence Level
No. Fails
2 Quantity
No. Fails
2 Quantity
0
1
2
3
4
5
6
7
8
9
10
11
12
1.833
4.045
6.211
8.351
10.473
12.584
14.685
16.780
18.868
20.951
23.031
25.106
27.179
0
1
2
3
4
5
6
7
8
9
10
11
12
4.605
7.779
10.645
13.362
15.987
18.549
21.064
23.542
25.989
28.412
30.813
33.196
35.563
The failure rate of semiconductor devices is inherently low.

As a result, the industry uses a technique called accelerated
testing to assess the reliability of semiconductors. During
accelerated tests, elevated stresses are used to produce, in
a short period, the same failure mechanisms as would be
observed under normal use conditions. The objective of this
testing is to identify these failure mechanisms and eliminate
them as a cause of failure during the useful life of the product.
Temperature, relative humidity, and voltage are the most
frequently used stresses during accelerated testing. Their
relationship to failure rates has been shown to follow an Eyring
type of equation of the form:
= A exp(kT) exp(B/RH) exp(CE)
Where A, B, C, , and k are constants, more specifically B,
C, and are numbers representing the apparent energy at
which various failure mechanisms occur. These are called
activation energies. T is the temperature, RH is the
relative humidity, and E is the electric field. The most familiar
form of this equation (shown on following page) deals with the
first exponential term that shows an Arrhenius type
relationship of the failure rate versus the junction temperature
of semiconductors. The junction temperature is related to the
ambient temperature through the thermal resistance and
power dissipation. Thus, we can test devices near their
maximum junction temperatures, analyze the failures to
assure that they are the types that are accelerated by
temperature and then by applying known acceleration factors,
estimate the failure rates for lower junction.
The table on the following page shows observed activation
energies with references.
Table 12 Time Dependent Failure Mechanisms in Semiconductor Devices

(Applicable to Discrete and Integrated Circuits)
Device
Association
Silicon Oxide
SiliconSilicon
Oxide Interface
Metallization
Process
Relevant
Factors
Typical
Activation
Energy in eV
Accelerating
Factors
Model
Reference
Surface Charges
Inversion, Accumulation
Mobile Ions
E/V, T
T, V
1.0
Fitch, et al.
Peck
1A
2
Oxide Pinholes
E/V, T
E, T
0.71.0 (Bipolar)
1.0 (Bipolar)
1984 WRS
Hokari, et al.
18
5
Dielectric Breakdown
(TDDB)
E/V, T
E, T
0.30.4 (MOS)
0.3 (MOS)
Domangue, et al.
Crook, D.L.
3
4
Charge Loss
E, T
E, T
0.8 (MOS)
EPROM
Gear, G.
11
Electromigration
T, J
J, T
1.0 Large grain Al

(glassivated)
Nanda, et al.
Grain Size
0.5
Small grain Al
Black, J.R.
Doping
0.7 CuAl/CuSiAl
(sputtered)
Black, J.R.
12
Corrosion
Chemical
Galvanic
Electrolytic
Contamination
H, E/V, T
0.60.7
(for electrolysis)
E/V may have
thresholds
Lycoudes, N.E.
Bond and Other

Mechanical Interfaces
Intermetallic
Growth
T, Impurities
Bond Strength
1.0 (Au/Al)
Fitch, W.T
Various Water Fab,

Assembly, and
Silicon Defects
Metal Scratches
Mask Defects, etc.
Silicon Defects
T, V
T, V
0.50.7 eV
Howes, et al.
10
0.5 eV
MMPD
13
V = voltage; E = electric field; T = temperature; J = current density; H = humidity

NO. REFERENCE
1A
1.0 eV activation for leakage type failures.

Fitch, W.T.; Greer, P.; Lycoudes, N.; Data to Support 0.001%/1000
Hours for Plastic I/Cs. Case study on linear product shows 0.914 eV
activation energy which is within experimental error of 0.9 to 1.3 eV
activation energies for reversible leakage (inversion) failures reported
in the literature.
1B
0.7 To 1.0 eV for oxide defect failures for bipolar structures. This is
under investigation subsequent to information obtained from 1984
Wafer Reliability Symposium, especially for bipolar capacitors with
silicon nitride as dielectric.
1.0 eV activation for leakage type failures.
0.65 eV for corrosion mechanism.

Lycoudes, N.E.; The Reliability of Plastic Microcircuits in Moist
Environments, 1978 Solid State Technology.
1.0 eV for open wires or high resistance bonds at the pad bond
due to AuAl intermetallics.
Fitch, W.T.; Operating Life vs Junction Temperatures for Plastic
Encapsulated I/C (1.5 mil Au wire), unpublished report.
0.36 eV for dielectric breakdown for MOS gate structures.

Domangue, E.; Rivera, R.; Shedard, C.; Reliability Prediction Using
Large MOS Capacitors, 1984 Reliability Physics Symposium.
0.5 eV Al, 0.7 eV CuAl small grain (compared to line width).

Black, J.R.; Current Limitation of Thin Film Conductor 1982 Reliability Physics Symposium.
Peck, D.S.; New Concerns About Integrated Circuit Reliability 1978

Reliability Physics Symposium.
3
1.0 eV for large grain AlSi (compared to line width).

Nanda, Vangard, GjP; Black, J.R.; Electromigration of AlSi Alloy
Films, 1978 Reliability Physics Symposium.
10
0.7 eV for assembly related defects.

Howes, M.G.; Morgan, D.V.; Reliability and Degradation, Semiconductor Devices and CIrcuits John Wiley and Sons, 1981.
0.3 eV for dielectric breakdown.

Crook, D.L.; Method of Determining Reliability Screens for Time
Dependent Dielectric Breakdown, 1979 Reliability Physics
Symposium.
11
Gear, G.; FAMOUS PROM Reliability Studies, 1976 Reliability

Physics Symposium.
1.0 eV for dielectric breakdown.
12
Black, J.R.: unpublished report.
Hokari, Y.; et al.; IEDM Technical Digest, 1982.
13
Motorola Memory Products Division; unpublished report.

913
THERMAL RESISTANCE
Circuit performance and longterm circuit reliabiity are
affected by die temperature. Normally, both are improved by
keeping the junction temperatures low.
Electrical power dissipated in any semiconductor device is
a source of heat. This heat source increases the temperature
of the die about some reference point, normally the ambient
temperature of 25C in still air. The temperature increase,
then, depends on the amount of power dissipated in the circuit
and on the net thermal resistance between the heat source
and the reference point.
The temperature at the junction depends on the packaging
and mounting systems ability to remove heat generated in the
circuit from the junction region to the ambient environment.
The basic formula for converting power dissipation to
estimated junction temperature is:
(1)
TJ = TA + PD (JC + CA)
or
TJ = TA + PD (JA)
(2)
where:
TJ = maximum junction temperature
TA = maximum ambient temperature
PD = calculated maximum power dissipation, including
effects of external loads when applicable
JC = average thermal resistance, junction to case
CA = average thermal resistance, case to ambient
JA = average thermal resistance, junction to ambient
This Motorola recommended formula has been approved
by RADC and DESC for calculating a practical maximum
operating junction temperature for MILM38510 devices.
Only two terms on the right side of equation (1) can be
varied by the user, the ambient temperature and the device
casetoambient thermal resistance, CA. (To some extent
the device power dissipation can also be controlled, but under
recommended use the supply voltage and loading dictate a

914
fixed power dissipation.) Both system air flow and the package
mounting technique affect the CA thermal resistance term.
JC is essentially independent of air flow and external
mounting method, but is sensitive to package material, die
bonding method, and die area.
For applications where the case is held at essentially a fixed
temperature by mounting on a large or temperature controlled
heat sink, the estimated junction temperature is calculated by:
TJ = TC + PD (JC)
(3)
where TC = maximum case temperature and the other
parameters are as previously defined.
AIR FLOW
Air flow over the packages (due to a decrease in JC)
reduces the thermal resistance of the package, therefore
permitting a corresponding increase in power dissipation
without exceeding the maximum permissible operating
junction temperature.
For thermal resistance values for specific packages, see
the Motorola Data Book or Design Manual for the appropriate
device family or contact your local Motorola sales office.
ACTIVATION ENERGY
Determination of activation energies is accomplished by
testing randomly selected samples from the same population
at various stress levels and comparing failure rates due to the
same failure mechanism. The activation energy is
represented by the slope of the curve relating to the natural
logarithm of the failure rate to the various stress levels.
In calculating failure rates, the comprehensive method is to
use the specific activation energy for each failure mechanism
applicable to the technology and circuit under consideration.
A common alternative method is to use a single activation
energy value for the expected failure mechanism(s) with the
lowest activation energy.
RELIABILITY STRESS TESTS

The following are brief descriptions of the reliability tests
commonly used in the reliability monitoring program. Not all of
the tests listed are performed by each product division. Other
tests may be performed when appropriate.
AUTOCLAVE (aka, PRESSURE COOKER)

Autoclave is an environmental test which measures device
resistance to moisture penetration and the resultant effect of
galvanic corrosion. Autoclave is a highly accelerated and
destructive test.
Typical Test Conditions: TA = 121C, rh = 100%, p = 1
atmosphere (15 psig), t = 24 to 96 hours
Common Failure Modes: Parametric shifts, high leakage and/or catastrophic
Common Failure Mechanisms: Die corrosion or contaminants such as foreign material on or within the package materials. Poor package sealing.
HIGH HUMIDITY HIGH TEMPERATURE

BIAS (H3TB, H3TRB, or THB)
This is an environmental test designed to measure the
moisture resistance of plastic encapsulated devices. A bias is
applied to create an electrolytic cell necessary to accelerate
corrosion of the die metallization. With time, this is a
catastrophically destructive test.
Typical Test Conditions: TA = 85C to 95C, rh = 85%
to 95%, Bias = 80% to 100% of Data Book max. rating, t
= 96 to 1750 hours
Common Failure Modes: Parametric shifts, high leakage and/or catastrophic
Common Failure Mechanisms: Die corrosion or contaminants such as foreign material on or within the package materials. Poor package sealing.
HIGH TEMPERATURE GATE BIAS (HTGB)

This test is designed to electrically stress the gate oxide under
a bias condition at high temperature.
Typical Test Conditions: TA = 150C, Bias = 80% of
Data Book max. rating, t = 120 to 1000 hours
Common Failure Modes: Parametric shifts in gate leakage and gate threshold voltage
Common Failure Mechanisms: Random oxide defects
and ionic contamination
Military Reference: MILSTD750, Method 1042
HIGH TEMPERATURE REVERSE BIAS

(HTRB)
The purpose of this test is to align mobile ions by means of
temperature and voltage stress to form a highcurrent
leakage path between two or more junctions.
Typical Test Conditions: TA = 85C to 150C, Bias =
80% to 100% of Data Book max. rating, t = 120 to 1000
hours
Common Failure Modes: Parametric shifts in leakage
and gain
Common Failure Mechanisms: Ionic contamination on
the surface or under the metallization of the die
HIGH TEMPERATURE STORAGE LIFE

(HTSL)
High temperature storage life testing is performed to
accelerate failure mechanisms which are thermally activated
through the application of extreme temperatures
Typical Test Conditions: TA = 70C to 200C, no bias, t
= 24 to 2500 hours
and gain
Common Failure Mechanisms: Bulk die and diffusion
defects
INTERMITTENT OPERATING LIFE (IOL)

The purpose of this test is the same as SSOL in addition to
checking the integrity of both wire and die bonds by means of
thermal stressing
Typical Test Conditions: TA = 25C, Pd = Data Book
maximum rating, Ton = Toff = D of 50C to 100C, t = 42
to 30000 cycles
Common Failure Modes: Parametric shifts and catastrophic
Common Failure Mechanisms: Foreign material, crack
and bulk die defects, metallization, wire and die bond
defects

915
MECHANICAL SHOCK
STEADY STATE OPERATING LIFE (SSOL)
This test is used to determine the ability of the device to

withstand a sudden change in mechanical stress due to abrupt
changes in motion as seen in handling, transportation, or
actual use.
Typical Test Conditions: Acceleration = 1500 gs, Orientation = X1, Y1, Y2 plane, t = 0.5 msec, Blows = 5
Common Failure Modes: Open, short, excessive leakage, mechanical failure
Common Failure Mechanisms: Die and wire bonds,
cracked die, package defects
The purpose of this test is to evaluate the bulk stability of the

die and to generate defects resulting from manufacturing
aberrations that are manifested as time and
stressdependent failures.
Typical Test Conditions: TA = 25C, PD = Data Book
maximum rating, t = 16 to 1000 hours
Common Failure Mechanisms: Foreign material, crack
die, bulk die, metallization, wire and die bond defects
MOISTURE RESISTANCE
TEMPERATURE CYCLING (AIR TO AIR)
The purpose of this test is to evaluate the moisture resistance

of components under temperature/humidity conditions typical
of tropical environments.
Typical Test Conditions: TA = 10C to 65C, rh = 80%
to 98%, t = 24 hours/cycles, cycle = 10
and mechanical failure
Common Failure Mechanisms: Corrosion or contaminants on or within the package materials. Poor package
sealing
The purpose of this test is to evaluate the ability of the device

to withstand both exposure to extreme temperatures and
transitions between temperature extremes. This testing will
also expose excessive thermal mismatch between materials.
Typical Test Conditions: TA = 65C to 200C, cycle =
10 to 4000
Common Failure Mechanisms: Wire bond, cracked or
lifted die and package failure
SOLDERABILITY
The purpose of this test is to measure the ability of the device
leads/terminals to be soldered after an extended period of
storage (shelf life).
Typical Test Conditions: Steam aging = 8 hours, Flux =
R, Solder = Sn60, Sn63
Common Failure Modes: Pin holes, dewetting, nonwetting
Common Failure Mechanisms: Poor plating, contaminated leads
THERMAL SHOCK (LIQUID TO LIQUID)

The purpose of this test is to evaluate the ability of the device
to withstand both exposure to extreme temperatures and
sudden transitions between temperature extremes. This
testing will also expose excessive thermal mismatch between
materials.
Typical Test Conditions: TA = 0C to 100C, cycle = 20
to 300
Common Failure Mechanisms: Wire bond, cracked or
lifted die and package failure
SOLDER HEAT
This test is used to measure the ability of a device to withstand
the temperatures as may be seen in wave soldering
operations. Electrical testing is the endpoint critierion for this
stress.
Typical Test Conditions: Solder Temperature = 260C, t
= 10 seconds
Common Failure Modes: Parameter shifts, mechanical
failure
Common Failure Mechanisms: Poor package design

916
VARIABLE FREQUENCY VIBRATION

This test is used to examine the ability of the device to
withstand deterioration due to mechanical resonance.
Typical Test Conditions: Peak acceleration = 20 gs,
Frequency range = 20 Hz to KHz, t = 48 minutes
Common Failure Modes: Open, short, excessive leakage, mechanical failure
Common Failure Mechanisms: Die and wire bonds,
cracked die, package defects
STATISTICAL PROCESS CONTROL

Communication Power & Signal Technologies Group
(CPSTG) is continually pursuing new ways to improve product
quality. Initial design improvement is one method that can be
used to produce a superior product. Equally important to
outgoing product quality is the ability to produce product that
consistently conforms to specification. Process variability is
the basic enemy of semiconductor manufacturing since it
leads to product variability. Used in all phases of Motorolas
product manufacturing, STATISTICAL PROCESS CONTROL
(SPC) replaces variability with predictability. The traditional
philosophy in the semiconductor industry has been
adherence to the data sheet specification. Using SPC
methods ensures that the product will meet specific process
requirements throughout the manufacturing cycle. The
emphasis is on defect prevention, not detection. Predictability
through SPC methods requires the manufacturing culture to
focus on constant and permanent improvements. Usually,
these improvements cannot be bought with stateoftheart
equipment or automated factories. With quality in design,
process, and material selection, coupled with manufacturing
predictability, Motorola can produce world class products.
The immediate effect of SPC manufacturing is predictability
through process controls. Product centered and distributed
well within the product specification benefits Motorola with
fewer rejects, improved yields, and lower cost. The direct
benefit to Motorolas customers includes better incoming
quality levels, less inspection time, and shiptostock
capability. Circuit performance is often dependent on the
cumulative effect of component variability. Tightly controlled
component distributions give the customer greater circuit
predictability. Many customers are also converting to
justintime (JIT) delivery programs. These programs require
improvements in cycle time and yield predictability achievable
only through SPC techniques. The benefit derived from SPC
helps the manufacturer meet the customers expectations of
higher quality and lower cost product.
Ultimately, Motorola will have Six Sigma capability on all
products. This means parametric distributions will be centered
within the specification limits, with a product distribution of plus
or minus Six Sigma about mean. Six Sigma capability, shown
graphically in Figure 1, details the benefit in terms of yield and
outgoing quality levels. This compares a centered distribution
versus a 1.5 sigma worst case distribution shift.
New product development at Motorola requires more robust
design features that make them less sensitive to minor
variations in processing. These features make the
implementation of SPC much easier.
A complete commitment to SPC is present throughout
Motorola. All managers, engineers, production operators,
supervisors, and maintenance personnel have received
multiple training courses on SPC techniques. Manufacturing
has identified 22 wafer processing and 8 assembly steps
considered critical to the processing of semiconductor
products. Processes controlled by SPC methods that have
shown significant improvement are in the diffusion,
photolithography, and metallization areas.
6 5 4 3 2 1 0
2 3 4
5 6
Standard Deviations From Mean

Distribution Centered
At 3 2700 ppm defective
99.73% yield
At 4 63 ppm defective
99.9937% yield
Distribution Shifted 1.5

66810 ppm defective
93.32% yield
6210 ppm defective
99.379% yield
At 5 0.57 ppm defective

99.999943% yield
233 ppm defective

99.9767% yield
At 6 0.002 ppm defective

99.9999998% yield
3.4 ppm defective

99.99966% yield
Figure 1. AOQL and Yield from a Normal

Distribution of Product With 6 Capability
To better understand SPC principles, brief explanations
have been provided. These cover process capability,
implementation, and use.
PROCESS CAPABILITY
One goal of SPC is to ensure a process is CAPABLE.
Process capability is the measurement of a process to
produce products consistently to specification requirements.
The purpose of a process capability study is to separate the
inherent RANDOM VARIABILITY from ASSIGNABLE
CAUSES. Once completed, steps are taken to identify and
eliminate the most significant assignable causes. Random
variability is generally present in the system and does not
fluctuate. Sometimes, the random variability is due to basic
limitations associated with the machinery, materials,
personnel skills, or manufacturing methods. Assignable
cause inconsistencies relate to time variations in yield,
performance, or reliability.
Traditionally, assignable causes appear to be random due
to the lack of close examination or analysis. Figure 2 shows
the impact on predictability that assignable cause can have.
Figure 3 shows the difference between process control and
process capability.
A process capability study involves taking periodic samples
from the process under controlled conditions. The
performance characteristics of these samples are charted
against time. In time, assignable causes can be identified and
engineered out. Careful documentation of the process is the
key to accurate diagnosis and successful removal of the
assignable causes. Sometimes, the assignable causes will
remain unclear, requiring prolonged experimentation.
Elements which measure process variation control and
capability are Cp and Cpk, respectively. Cp is the specification
width divided by the process width or Cp = (specification
width) / 6. Cpk is the absolute value of the closest
specification value to the mean, minus the mean, divided by
half the process width or Cpk = closest specification X/3.

917
PREDICTION
In control assignable
causes eliminated
TIME
TIME
Out of control
(assignable causes present)
SIZE
Process under control all assignable causes are

removed and future distribution is predictable.
SIZE
? ?
?
? ?
? ?
?
PREDICTION
Lower
Specification Limit
Upper
Specification Limit
TIME
TIME
SIZE
Figure 2. Impact of Assignable Causes

on Process Predictable
At Motorola, for critical parameters, the process capability
is acceptable with a Cpk = 1.50 with continual improvement
our goal. The desired process capability is a Cpk = 2 and the
ideal is a Cpk = 5. Cpk, by definition, shows where the current
production process fits with relationship to the specification
limits. Off center distributions or excessive process variability
will result in less than optimum conditions.
SPC IMPLEMENTATION AND USE

CPSTG uses many parameters that show conformance to
specification. Some parameters are sensitive to process
variations while others remain constant for a given product
line. Often, specific parameters are influenced when changes
to other parameters occur. It is both impractical and
unnecessary to monitor all parameters using SPC methods.
Only critical parameters that are sensitive to process
variability are chosen for SPC monitoring. The process steps
affecting these critical parameters must be identified as well.
It is equally important to find a measurement in these process
steps that correlates with product performance. This
measurement is called a critical process parameter.
Once the critical process parameters are selected, a
sample plan must be determined. The samples used for
measurement are organized into RATIONAL SUBGROUPS
of approximately two to five pieces. The subgroup size should
be such that variation among the samples within the subgroup
remain small. All samples must come from the same source
e.g., the same mold press operator, etc. Subgroup data should

918
SIZE
In control and capable

(variation from random
variability reduced)
In control but not capable

(variation from random variability
excessive)
Figure 3. Difference Between Process

Control and Process Capability
be collected at appropriate time intervals to detect variations
in the process. As the process begins to show improved
stability, the interval may be increased. The data collected
must be carefully documented and maintained for later
correlation. Examples of common documentation entries are
operator, machine, time, settings, product type, etc.
Once the plan is established, data collection may begin. The
data collected with generate X and R values that are plotted
with respect to time. X refers to the mean of the values within
a given subgroup, while R is the range or greatest value minus
least value. When approximately 20 or more X and R values
have been generated, the average of these values is
computed as follows:
X = (X + X2 + X3 + . . .)/K
R = (R1 + R2 + R2 + . . .)/K
where K = the number of subgroups measured.
The values of X and R are used to create the process control
chart. Control charts are the primary SPC tool used to signal
a problem. Shown in Figure 4, process control charts show X
and R values with respect to time and concerning reference
to upper and lower control limit values. Control limits are
computed as follows:
R upper control limit = UCLR = D4 R
R lower control limit = LCLR = D3 R
X upper control limit = UCLX = X + A2 R
X lower control limit = LCL X = X A2 R
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
154
153
UCL = 152.8
152
151
X = 150.4
150
149
LCL = 148.0
148
147
UCL = 7.3
7
6
5
4
R = 3.2
3
2
1
LCL = 0
Figure 4. Example of Process Control Chart Showing Oven Temperature Data
Where D4, D3, and A2 are constants varying by sample size,

with values for sample sizes from 2 to 10 shown in the
following partial table:
n
10
D4
3.27
2.57
2.28
2.11
2.00
1.92
1.86
1.82
1.78
D3
0.08
0.14
0.18
0.22
A2
1.88 1.02 0.73 0.58 0.48 0.42 0.37 0.34 0.31
*For sample sizes below 7, the LCLR would technically be a negative number;
in those cases there is no lower control limit; this means that for a subgroup size
6, six identical measurements would not be unreasonable.
Control charts are used to monitor the variability of critical

process parameters. The R chart shows basic problems with
piece to piece variability related to the process. The X chart can
often identify changes in people, machines, methods, etc. The
source of the variability can be difficult to find and may require
experimental design techniques to identify assignable causes.
Some general rules have been established to help determine
when a process is OUTOFCONTROL. Figure 5 shows a
control chart subdivided into zones A, B, and C corresponding
to 3 sigma, 2 sigma, and 1 sigma limits respectively. In Figures
6 through 9 four of the tests that can be used to identify
excessive variability and the presence of assignable causes
are shown. As familiarity with a given process increases, more
subtle tests may be employed successfully.
Once the variability is identified, the cause of the variability
must be determined. Normally, only a few factors have a
significant impact on the total variability of the process. The
importance of correctly identifying these factors is stressed in
the following example. Suppose a process variability depends
on the variance of five factors A, B, C, D, and E. Each has a
variance of 5, 3, 2, 1, and 0.4, respectively.
Since:
tot =
A2 + B2 + C2 + D2 + E2
tot =
52 + 32 + 22 + 12 +(0.4)2 = 6.3
If only D is identified and eliminated, then:

tot =
52 + 32 + 22 + (0.4)2 = 6.2
This results in less than 2% total variability improvement. If
B, C, and D were eliminated, then:
tot =
52 + (0.4)2 = 5.02
This gives a considerably better improvement of 23%. If
only A is identified and reduced from 5 to 2, then:
tot =
22 + 32 + 22 + 12 + (0.4)2 = 4.3
Identifying and improving the variability from 5 to 2 yields a
total variability improvement of nearly 40%.
Most techniques may be employed to identify the primary
assignable cause(s). Outofcontrol conditions may be
correlated to documented process changes. The product may
be analyzed in detail using best versus worst part comparisons
or Product Analysis Lab equipment. Multivariance analysis
can be used to determine the family of variation (positional,
critical, or temporal). Lastly, experiments may be run to test
theoretical or factorial analysis. Whatever method is used,
assignable causes must be identified and eliminated in the
most expeditious manner possible.
After assignable causes have been eliminated, new control
limits are calculated to provide a more challenging variablility
criteria for the process. As yields and variability improve, it may
become more difficult to detect improvements because they
become much smaller. When all assignable causes have been
eliminated and the points remain within control limits for 25
groups, the process is said to in a state of control.

919
UCL
UCL
ZONE A (+ 3 SIGMA)
ZONE B (+ 2 SIGMA)
ZONE C (+ 1 SIGMA)
CENTERLINE
ZONE C ( 1 SIGMA)
ZONE B ( 2 SIGMA)
ZONE A ( 3 SIGMA)
LCL
Figure 5. Control Chart Zones
Figure 6. One Point Outside Control Limit

Indicating Excessive Variability
UCL
UCL
LCL
LCL
Figure 7. Two Out of Three Points in Zone A or

Beyond Indicating Excessive Variability
LCL
Figure 8. Four Out of Five Points in Zone B or

UCL
A
B
C
C
B
A
LCL
Figure 9. Seven Out of Eight Points in Zone C or

SUMMARY
Motorola is committed to the use of STATISTICAL
PROCESS CONTROLS. These principles, used throughout
manufacturing have already resulted in many significant
improvements to the processes. Continued dedication to the

920
SPC culture will allow Motorola to reach the Six Sigma and
zero defect capability goals. SPC will further enhance the
commitment to TOTAL CUSTOMER SATISFACTION.
Section 10
Replacement
Devices
In Brief . . .
The Replacement Devices index
provides you with a list of devices which
had been supported with data sheets in
the prior edition of the SmallSignal
Transistors, FETs and Diodes data book
(DL126 Rev 5) but are no longer
supported in this new edition. A direct or
similar replacement part is listed for
those devices which have replacement
parts.
Replacement Devices
101
REPLACEMENT DEVICES
DEVICE
REPLACEMENT
DEVICE
REPLACEMENT
DEVICE
REPLACEMENT
1N5139
1N5139A
1N5140
1N5140A
1N5141
1N5141A
1N5142
1N5142A
1N5143
1N5143A
MV2101
MV2101
MMBV2103LT1
MMBV2103LT1
MMBV2104LT1
MMBV2104LT1
MMBV2105LT1
MMBV2105LT1
MMBV2105LT1
MMBV2105LT1
2N3053A
2N3244
2N3250
2N3251
2N3251A
2N3467
2N3468
2N3497
2N3500
2N3501
MPSA05
2N4403
2N4403
MPS2907A
MPS2907A
MPSA56
MPSA56
2N5401
2N5551
2N5551
BC560B
BC849ALT1
BC850ALT1
BC857CLT1
BCY70
BCY71
BCY72
BDB01D
BDB02D
BDC02D
BC560C
BC848ALT1
BC848ALT1
BC857ALT1
MPS2222A
MPS2222A
MPS2222A
BDB01C
BDB02C
BDC01D
1N5144
1N5144A
1N5145
1N5145A
1N5146
1N5146A
1N5147
1N5147A
1N5441A
1N5443A
MMBV2107LT1
MMBV2107LT1
MMBV2108LT1
MMBV2108LT1
MMBV2109LT1
MV2109
MV2111
MV2111
MV2101
MV2103
2N3546
2N3634
2N3635
2N3636
2N3637
2N3700
2N3799
2N3947
2N3963
2N3964
MPSH17
2N5401
2N5401
MPSA92
MPSA92
MPSA06
MPSA18
MPS2222A
MPSA18
MPSA18
BDC05
BF244A
BF244B
BF245
BF245A
BF245B
BF245C
BF246A
BF246B
BF247B
MPSW42
2N3819
2N3819
BF245A
BF245A
BF245A
BF245A
BF245A
BF245A
BF245A
1N5444A
1N5445A
1N5449A
1N5450A
1N5451A
1N5452A
1N5453A
1N5455A
2N697
2N718A
MV2104
MV2105
MV2108
MV2109
MV2111
MV2111
MV2111
MV2115
MPSA20
MPSA05
2N4014
2N4032
2N4033
2N4036
2N4037
2N4126
2N4265
2N4405
2N4407
2N4931
MPS2222A
MPS2907A
MPSA56
MPSA56
MPSA56
MPS4126
2N4264
MPS8599
MPS8599
MPSA92
BF256B
BF256C
BF258
BF374
BF391
BF392
BF492
BF493
BFW43
BSP20AT1
BF256A
BF256A
BF422
BC338
MPSA42
MPSA42
MPSA92
MPSA92
2N5401
BF720T1
2N720A
2N930
2N930A
2N956
2N1613
2N1711
2N1893
2N2102
2N2218A
2N2219
MPSA06
MPSA18
MPSA18
MPSA05
2N4410
MPSA05
MPSA06
2N4410
MPS2222A
MPS2222A
2N5086
2N5668
2N5669
2N5670
2N6431
2N6433
2N6516
BA582T1
BC107
BC107A
2N5087
2N3819
2N3819
2N3819
MPSA42
MPSA92
2N6517
MMBV3401LT1
BC237
BC237
BSS71
BSS72
BSS73
BSS74
BSS75
BSS76
BSS89
BSV1610
BSX20
CV12253
MPSA42
MPSA42
MPSA42
MPSA92
MPSA92
MPSA92
BS107
MPS2907A
MPS2369A
MPSA06
2N2219A
2N2222
2N2222A
2N2270
2N2369
2N2369A
2N2484
2N2895
2N2896
2N2904
MPS2222A
MPS2222
MPS2222A
MPSA05
MPS2369
MPS2369A
2N5087
MPSA06
2N5551
MPS2907
BC107B
BC108
BC109C
BC14010
BC14016
BC14110
BC14116
BC16016
BC16116
BC177
BC237
BC3338
MPSW06
MPSW06
MPSW06
MPSW06
MPSW56
MPSW56
BC547
IRFD110
IRFD113
IRFD120
IRFD123
IRFD210
IRFD213
IRFD220
IRFD223
IRFD9120
IRFD9123
BSS123LT1
MMBF170LT1
BSS123LT1
MMBF170LT1
MMFT107T1
MMFT107T1
MMFT107T1
MMFT107T1
BSS123LT1
2N7002LT1
2N2904A
2N2905
2N2905A
2N2906
2N2906A
2N2907
2N2907A
2N3019
2N3020
2N3053
MPS2907A
MPS2907
MPS2907A
MPS2907
MPS2907A
MPS2907
MPS2907A
MPSA06
MPSA06
MPSA20
BC177A
BC177B
BC238
BC309B
BC393
BC394
BC450
BC450A
BC546A
BC559
BC547A
BC547B
BC238B
BC308C
MPSA92
MPSA42
MPSA92
MPSA92
BC546B
BC559B
J111
J113
J203
J300
J305
MAD130P
MAD1103P
MAD1107P
MAD1108P
MAD1109P
J111RLRA
J113RL1
2N5458
2N5486
MMBF5484LT1
BAS16LT1
BAS16LT1
BAS16LT1
BAS16LT1
BAS16LT1
Replacement Devices
102
REPLACEMENT DEVICES
DEVICE
REPLACEMENT
DEVICE
REPLACEMENT
DEVICE
REPLACEMENT
MM3001
MM3725
MM4001
MMAD1106
MMBF4856LT1
MMBF4860LT1
MMBF5459LT1
MMBF5486LT1
MMBT8599LT1
MMBV2104LT1
2N5551
MPS2222A
2N5401
BAS16LT1
MMBF4391LT1
MMBF5457LT1
MMBF5457LT1
2N5486
MMBT5551LT1
MMBV2103LT1
MPS6530
MPS6531
MPS6562
MPS6568A
MPS6571
MPS6595
MPS8093
MPSA16
MPSH04
MPSH07A
MPS6530RLRM
MPS6530RLRM
MPS6651
MPS918
MPSA18
MPS3563
2N4402
MPSA17
MPSH17
MPSH17
MV2114
MVAM108
MVAM109
MVAM115
MVAM125
PBF259
PBF259S
PBF259RS
PBF493
PBF493R
MV2115
MMBV2109LT1
MMBV2109LT1
MMBV2109LT1
MMBV2109LT1
MMBT6517LT1
MMBT6517LT1
MMBT6517LT1
MMBTA92LT1
MMBTA92LT1
MMPQ3799
MMSV3401T1
MPF970
MPF971
MPF3821
MPF3822
MPF4856
MPF4857
MPF4858
MPF4859
MMPQ3725
MMBV3401LT1
MMBFJ175LT1
MMBFJ175LT1
MMBF5457LT1
MMBF5457LT1
MPF4391RLRA
2N5639
J112
2N5638RLRA
MPSH20
MPSH24
MPSH34
MPSH69
MSA1022BT1
MSB709ST1
MSB710QT1
MSB1218AST1
MSC1621T1
MSC2404CT1
MPSH17
MPSH17
MPSH17
MPSH81
MSA1022CT1
MSB709RT1
MSB710RT1
MSB1218ART1
MSD602RT1
MSC2295CT1
PBF493RS
PBF493S
VN1706L
MMBTA92LT1
MMBTA92LT1
MMFT107T1
MPF4860
MPF4861
MPQ6501
MPS3638
MPS3866
MPS4123
MPS4125
MPS4258
MPS5771
MPS6520
2N5638RLRA
J112
MPQ6502
MPS3638A
BF224
MPS4124
MPS4126
MPS3640
MPS3640
MPS6521
MSD1819AST1
MV1620
MV1624
MV1636
MV1640
MV1642
MV1644
MV2103
MV2107
MV2113
MSD1819ART1
MV2101
MMBV2103LT1
MV2108
MV2109
MV2111
MV2111
MMBV2103LT1
MV2108
MV2111
Replacement Devices
103
Replacement Devices
104
Section 11
Alphanumeric Index
Alphanumeric Index
111
Alphanumeric Index
Device
Page
Device
Page
Page
BC517 . . . . . . . . . . . . . . . . . . . 14, 2111

BC546 . . . . . . . . . . . . . . . . . . 12, 2116
BC546B . . . . . . . . . . . . . . . . . 12, 2116
BC547 . . . . . . . . . . . . . . . . . . 12, 2116
BC547A . . . . . . . . . . . . . . . . . 12, 2116
BC547B . . . . . . . . . . . . . . . . . 12, 2116
BC547C . . . . . . . . . . . . . . . . . 12, 2116
BC548 . . . . . . . . . . . . . . . . . . 12, 2116
BC548A . . . . . . . . . . . . . . . . . 12, 2116
BC548B . . . . . . . . . . . . . . . . . 12, 2116
1N5148 . . . . . . . . . . . . . 123, 124, 53

1N5148A . . . . . . . . . . . . . . . . . . . . . . . 53
1N5446ARL . . . . . . . . . . . . . . 124, 56
1N5448ARL . . . . . . . . . . . . . . 124, 56
1N5456A . . . . . . . . . . . . 123, 124, 56
2N3903 . . . . . . . . . . . . . . . . . . . 12, 23
2N3904 . . . . . . . . . . . . . . . . . . . 12, 23
2N3905 . . . . . . . . . . . . . . . . . . . 12, 29
2N3906 . . . . . . . . . . . . . . . . . . . 12, 29
2N4123 . . . . . . . . . . . . . . . . . . 12, 214
BAT54LT1 . . . . . . . . . . . . . . .
BAT54SLT1 . . . . . . . . . . . . . .
BAT54SWT1 . . . . . . . . . . . . .
BAT54T1 . . . . . . . . . . . . . . . .
BAT54WT1 . . . . . . . . . . . . . .
BAV70LT1 . . . . . . . . . . . . . . .
BAV70WT1 . . . . . . . . . . . . . .
BAV74LT1 . . . . . . . . . . . . . . .
BAV99LT1 . . . . . . . . . . . . . . .
BAV99RWT1 . . . . . . . . . . . .
2N4124
2N4125
2N4264
2N4400
2N4401
2N4402
2N4403
2N4410
2N5087
2N5088
..................
..................
..................
..................
..................
..................
..................
..................
..................
..................
12, 214
12, 218
16, 222
12, 227
12, 227
12, 232
12, 232
12, 237
13, 241
13, 247
BAV99WT1 . . . . . . . . . . . . . . 133, 547

BAV170LT1 . . . . . . . . . . . . . . 134, 550
BAV199LT1 . . . . . . . . . . . . . . 134, 552
BAW56LT1 . . . . . . . . . . . . . . 133, 554
BAW56WT1 . . . . . . . . . . . . . 133, 556
BAW156LT1 . . . . . . . . . . . . . 134, 558
BC182 . . . . . . . . . . . . . . . . . . . 12, 279
BC182A . . . . . . . . . . . . . . . . . . . . . . . 279
BC182B . . . . . . . . . . . . . . . . . . . . . . . 279
BC183 . . . . . . . . . . . . . . . . . . . . . . . . 279
BC548C . . . . . . . . . . . . . . . . .
BC549B . . . . . . . . . . . . . . . . .
BC549C . . . . . . . . . . . . . . . . .
BC550B . . . . . . . . . . . . . . . . .
BC550C . . . . . . . . . . . . . . . . .
BC556 . . . . . . . . . . . . . . . . . .
BC556B . . . . . . . . . . . . . . . . .
BC557 . . . . . . . . . . . . . . . . . .
BC557A . . . . . . . . . . . . . . . . .
BC557B . . . . . . . . . . . . . . . . .
2N5089
2N5209
2N5210
2N5400
2N5401
2N5457
2N5458
2N5460
2N5461
2N5462
. . . . . . . . . . . . . . . . . . 13, 247
. . . . . . . . . . . . . . . . . . . . . . . 251
. . . . . . . . . . . . . . . . . . . . . . . 251
. . . . . . . . . . . . . . . . . . . . . . . 255
. . . . . . . . . . . . . . . . . . 15, 255
. . . . . . . . . . . . . . . . 118, 4110
. . . . . . . . . . . . . . . . . . . . . . . 118
. . . . . . . . . . . . . . . . 118, 4113
. . . . . . . . . . . . . . . . 118, 4113
. . . . . . . . . . . . . . . . 118, 4113
BC184 . . . . . . . . . . . . . . . . . . . . . . . . 279
BC212 . . . . . . . . . . . . . . . . . . . 12, 282
BC212B . . . . . . . . . . . . . . . . . . . . . . . 282
BC213 . . . . . . . . . . . . . . . . . . . . . . . . 282
BC214 . . . . . . . . . . . . . . . . . . . . . . . . 282
BC237 . . . . . . . . . . . . . . . . . . . . . . . . 285
BC237A . . . . . . . . . . . . . . . . . . . . . . . 285
BC237B . . . . . . . . . . . . . . . . . . 12, 285
BC237C . . . . . . . . . . . . . . . . . . . . . . . 285
BC238B . . . . . . . . . . . . . . . . . . . . . . . 285
BC557C . . . . . . . . . . . . . . . . . 12, 2123

BC558B . . . . . . . . . . . . . . . . . 12, 2123
BC559B . . . . . . . . . . . . . . . . . 13, 2128
BC559C . . . . . . . . . . . . . . . . . 13, 2128
BC560C . . . . . . . . . . . . . . . . . 13, 2128
BC618 . . . . . . . . . . . . . . . . . . 14, 2131
BC635 . . . . . . . . . . . . . . . . . . . . . . . 2136
BC636 . . . . . . . . . . . . . . . . . . . . . . . 2139
BC637 . . . . . . . . . . . . . . . . . . . . . . . 2136
BC638 . . . . . . . . . . . . . . . . . . . . . . . 2139
2N5484
2N5485
2N5486
2N5550
2N5551
2N5555
2N5639
2N5640
2N6426
2N6427
. . . . . . . . . . . . . . . . 118, 4116
. . . . . . . . . . . . . . . . . . . . . . . 118
. . . . . . . . . . . . . . . . 118, 4116
. . . . . . . . . . . . . . . . . . . . . . . 259
. . . . . . . . . . . . . . . . . . 15, 259
. . . . . . . . . . . . . . . . 119, 4123
. . . . . . . . . . . . . . . . . . . . . . . 119
. . . . . . . . . . . . . . . . 119, 4130
. . . . . . . . . . . . . . . . . . 14, 264
. . . . . . . . . . . . . . . . . . 14, 264
BC238C . . . . . . . . . . . . . . . . . . . . . . . 285
BC239 . . . . . . . . . . . . . . . . . . . 13, 285
BC239C . . . . . . . . . . . . . . . . . . . . . . . 285
BC307 . . . . . . . . . . . . . . . . . . . . . . . . 288
BC307B . . . . . . . . . . . . . . . . . . 12, 288
BC307C . . . . . . . . . . . . . . . . . . . . . . . 288
BC308C . . . . . . . . . . . . . . . . . . . . . . . 288
BC327 . . . . . . . . . . . . . . . . . . . 12, 291
BC32716 . . . . . . . . . . . . . . . . . . . . . 291
BC32725 . . . . . . . . . . . . . . . . . . . . . 291
BC639 . . . . . . . . . . . . . . . . . . 14, 2136

BC640 . . . . . . . . . . . . . . . . . . 14, 2139
BC80716LT1 . . . . . . . . . . 110, 2142
BC80725LT1 . . . . . . . . . . 110, 2142
BC80740LT1 . . . . . . . . . . 110, 2142
BC80825WT1 . . . . . . . . . . . . . . . . 111
BC80840WT1 . . . . . . . . . . . . . . . . 111
BC81716LT1 . . . . . . . . . . 110, 2144
BC81725LT1 . . . . . . . . . . 110, 2144
BC81740LT1 . . . . . . . . . . 110, 2144
2N6515 . . . . . . . . . . . . . . . . . . . . . . . 269
2N6517 . . . . . . . . . . . . . . . . . . 15, 269
2N6519 . . . . . . . . . . . . . . . . . . 15, 269
2N6520 . . . . . . . . . . . . . . . . . . 15, 269
2N7000 . . . . . . . . . . . . . . . . . . 120, 43
2N7002LT1 . . . . . . . . . . 122, 137, 45
2N7008 . . . . . . . . . . . . . . . . . . . . . . . 120
2SA1774 . . . . . . . . . . . . . . . . 112, 275
2SC4617 . . . . . . . . . . . . . . . . 112, 277
BAL99LT1 . . . . . . . . . . . . . . . . 132, 59
BC328 . . . . . . . . . . . . . . . . . . . 12, 291

BC32816 . . . . . . . . . . . . . . . . . . . . . 291
BC32825 . . . . . . . . . . . . . . . . . . . . . 291
BC337 . . . . . . . . . . . . . . . . . . . 12, 294
BC33716 . . . . . . . . . . . . . . . . . . . . . 294
BC33725 . . . . . . . . . . . . . . . . . . . . . 294
BC33740 . . . . . . . . . . . . . . . . . . . . . 294
BC338 . . . . . . . . . . . . . . . . . . . 12, 294
BC33816 . . . . . . . . . . . . . . . . . . . . . 294
BC33825 . . . . . . . . . . . . . . . . . . . . . 294
BC81825WT1 . . . . . . . . . . . . . . . . 111
BC81840WT1 . . . . . . . . . . . . . . . . 111
BC818WT1 . . . . . . . . . . . . . . . . . . . . 111
BC846ALT1 . . . . . . . . . . . . 110, 2146
BC846AWT1 . . . . . . . . . . . . 111, 2150
BC846BLT1 . . . . . . . . . . . . 110, 2146
BC846BWT1 . . . . . . . . . . . 111, 2150
BC847ALT1 . . . . . . . . . . . . 110, 2146
BC847AWT1 . . . . . . . . . . . . 111, 2150
BC847BLT1 . . . . . . . . . . . . 110, 2146
BAS16LT1 . . . . . . . . . . . . . . .
BAS16WT1 . . . . . . . . . . . . . .
BAS21LT1 . . . . . . . . . . . . . . .
BAS4004LT1 . . . . . . . . . . .
BAS4006LT1 . . . . . . . . . . .
BAS40LT1 . . . . . . . . . . . . . . .
BAS7004LT1 . . . . . . . . . . .
BAS70LT1 . . . . . . . . . . . . . . .
BAS116LT1 . . . . . . . . . . . . . .
BAT54ALT1 . . . . . . . . . . . . . .
BC33840 . . . . . . . . . . . . . . . . . . . . . 294
BC368 . . . . . . . . . . . . . . . . . . . 14, 297
BC369 . . . . . . . . . . . . . . . . . . . 14, 297
BC372 . . . . . . . . . . . . . . . . . . . . . . . . 299
BC373 . . . . . . . . . . . . . . . . . . . 14, 299
BC489 . . . . . . . . . . . . . . . . . . 14, 2101
BC489A . . . . . . . . . . . . . . . . . . . . . . 2101
BC489B . . . . . . . . . . . . . . . . . . . . . . 2101
BC490 . . . . . . . . . . . . . . . . . . 14, 2106
BC490A . . . . . . . . . . . . . . . . . . . . . . 2106
BC847BWT1 . . . . . . . . . . . 111, 2150

BC847CLT1 . . . . . . . . . . . . 110, 2146
BC847CWT1 . . . . . . . . . . . 111, 2150
BC848ALT1 . . . . . . . . . . . . 110, 2146
BC848AWT1 . . . . . . . . . . . . 111, 2150
BC848BLT1 . . . . . . . . . . . . 110, 2146
BC848BWT1 . . . . . . . . . . . 111, 2150
BC848CLT1 . . . . . . . . . . . . 110, 2146
BC848CWT1 . . . . . . . . . . . 111, 2150
BC849BLT1 . . . . . . . . . . . . . . . . . . 2146
Alphanumeric Index
112
132, 511
132, 513
132, 516
130, 519
130, 520
130, 518
130, 522
130, 521
133, 523
130, 525
130, 527
130, 529
130, 531
130, 533
130, 535
133, 537
133, 539
133, 542
133, 544
133, 547
Device
12, 2116
13, 2120
13, 2120
13, 2120
13, 2120
12, 2123
12, 2123
12, 2123
12, 2123
12, 2123
Alphanumeric Index
Device
Page
Device
Page
Device
Page
BC849CLT1 . . . . . . . . . . . . . . . . . . 2146
BC850BLT1 . . . . . . . . . . . . . . . . . . 2146
BC850CLT1 . . . . . . . . . . . . . . . . . . 2146
BC856ALT1 . . . . . . . . . . . . 110, 2154
BC856AWT1 . . . . . . . . . . . . 111, 2159
BC856BLT1 . . . . . . . . . . . . 110, 2154
BC856BWT1 . . . . . . . . . . . 111, 2159
BC857ALT1 . . . . . . . . . . . . 110, 2154
BC857AWT1 . . . . . . . . . . . . 111, 2159
BC857BLT1 . . . . . . . . . . . . 110, 2154
BS107 . . . . . . . . . . . . . . . . . . . 120, 48
BS107A . . . . . . . . . . . . . . . . . . 120, 48
BS170 . . . . . . . . . . . . . . . . . . 120, 411
BSP16T1 . . . . . . . . . . . . . . . 117, 2264
BSP19AT1 . . . . . . . . . . . . . 117, 2266
BSP52T1 . . . . . . . . . . . . . . . 117, 2268
BSP62T1 . . . . . . . . . . . . . . . 117, 2270
BSS63LT1 . . . . . . . . . . . . . . 116, 2273
BSS64LT1 . . . . . . . . . . . . . . 116, 2275
BSS84LT1 . . . . . 122, 137, 32, 413
MGSF1P02ELT1122, 137, 315, 428

MGSF1P02LT1 122, 137, 317, 430
MGSF3441VT1 . . . . . 137, 320, 433
MGSF3441XT1 . . . . . 137, 324, 437
MGSF3442VT1 . . . . . 137, 326, 439
MGSF3442XT1 . . . . . 137, 330, 443
MGSF3454VT1 . . . . . 137, 332, 445
MGSF3454XT1 . . . . . 137, 336, 449
MGSF3455VT1 . . . . . 137, 340, 453
MGSF3455XT1 . . . . . 137, 344, 457
BC857BWT1 . . . . . . . . . . .
BC858ALT1 . . . . . . . . . . . .
BC858AWT1 . . . . . . . . . . . .
BC858BLT1 . . . . . . . . . . . .
BC858BWT1 . . . . . . . . . . .
BC858CLT1 . . . . . . . . . . . .
BC858CWT1 . . . . . . . . . . .
BCP53T1 . . . . . . . . . . . . . .
BCP56T1 . . . . . . . . . . . . . .
BCP68T1 . . . . . . . . . . . . . .
111, 2159
110, 2154
111, 2159
110, 2154
111, 2159
110, 2154
111, 2159
116, 2164
116, 2166
117, 2169
BSS123LT1 . . . . . . . . 122, 137, 416

BSS138LT1 . . . 122, 137, 35, 418
BSV52LT1 . . . . . . . . . . . . . . 114, 2277
DAN222 . . . . . . . . . . . . . . . . . 133, 560
DAP222 . . . . . . . . . . . . . . . . . 133, 562
DTA114YE . . . . . . . . . . . . . 113, 2279
DTA143EE . . . . . . . . . . . . . 113, 2281
DTC114TE . . . . . . . . . . . . . 113, 2282
DTC114YE . . . . . . . . . . . . . 113, 2283
J110 . . . . . . . . . . . . . . . . . . . . . . . . . . 119
MMAD130 . . . . . . . . . . . . . . . 135, 593

MMAD1103 . . . . . . . . . . . . . . 135, 593
MMAD1105 . . . . . . . . . . . . . . 135, 593
MMAD1106 . . . . . . . . . . . . . . . . . . . . 135
MMAD1107 . . . . . . . . . . . . . . 135, 593
MMAD1108 . . . . . . . . . . . . . . 135, 596
MMAD1109 . . . . . . . . . . . . . . 135, 593
MMBD101LT1 . . . . . . 129, 130, 580
MMBD301LT1 . . . . . . 129, 130, 587
MMBD330T1 . . . . . . . . . . . . . . . . . . 130
BCP69T1 . . . . . . . . . . . . . . 117, 2172

BCW29LT1 . . . . . . . . . . . . . . . . . . . 2174
BCW30LT1 . . . . . . . . . . . . . . . . . . . 2174
BCW33LT1 . . . . . . . . . . . . . . . . . . . 2180
BCW60ALT1 . . . . . . . . . . . . . . . . . . 2186
BCW60BLT1 . . . . . . . . . . . . . . . . . . 2186
BCW60DLT1 . . . . . . . . . . . . . . . . . 2186
BCW61BLT1 . . . . . . . . . . . . . . . . . . 2192
BCW61CLT1 . . . . . . . . . . . . . . . . . 2192
BCW61DLT1 . . . . . . . . . . . . . . . . . 2192
J112 . . . . . . . . . . . . . . . . . . . 119, 4138

J202 . . . . . . . . . . . . . . . . . . . 118, 4141
J304 . . . . . . . . . . . . . . . . . . . . . . . . . 4144
J308 . . . . . . . . . . . . . . . . . . . 118, 4151
J309 . . . . . . . . . . . . . . . . . . . 118, 4151
J310 . . . . . . . . . . . . . . . . . . . 118, 4151
M1MA141KT1 . . . . . . . . . . . 132, 564
M1MA141WAT1 . . . . . . . . . . 133, 566
M1MA141WKT1 . . . . . . . . . 133, 568
M1MA142KT1 . . . . . . . . . . . 132, 564
MMBD352LT1 . . . . . . 129, 130, 599

MMBD352WT1 . . . . . . . . . 130, 5101
MMBD353LT1 . . . . . . 129, 130, 599
MMBD354LT1 . . . . . . 129, 130, 599
MMBD355LT1 . . . . . . . . . . . . . . . . . 599
MMBD452LT1 . . . . . . . . . . . . . . . . 5103
MMBD701LT1 . . . . . . 129, 130, 589
MMBD717LT1 . . . . . . . . . . . . . . . . 5105
MMBD770T1 . . . . . . . . . . . . . . . . . . 130
MMBD914LT1 . . . . . . . . . . 132, 5107
BCW65ALT1 . . . . . . . . . . . . . . . . . .
BCW68GLT1 . . . . . . . . . . . . . . . . .
BCW69LT1 . . . . . . . . . . . . . . . . . . .
BCW70LT1 . . . . . . . . . . . . . . . . . . .
BCW72LT1 . . . . . . . . . . . . . . . . . . .
BCX17LT1 . . . . . . . . . . . . . . . . . . .
BCX18LT1 . . . . . . . . . . . . . . . . . . .
BCX19LT1 . . . . . . . . . . . . . . . . . . .
BCX20LT1 . . . . . . . . . . . . . . . . . . .
BCX70GLT1 . . . . . . . . . . . . . . . . . .
2198
2200
2202
2202
2208
2214
2214
2214
2214
2216
M1MA142WAT1 . . . . . . . . . . 133, 566

M1MA142WKT1 . . . . . . . . . 133, 568
M1MA151AT1 . . . . . . . . . . . 132, 570
M1MA151KT1 . . . . . . . . . . . 132, 572
M1MA151WAT1 . . . . . . . . . . 133, 574
M1MA151WKT1 . . . . . . . . . 133, 576
M1MA152AT1 . . . . . . . . . . . . . . . . . 570
M1MA152KT1 . . . . . . . . . . . . . . . . . 572
M1MA152WAT1 . . . . . . . . . . . . . . . . 574
M1MA152WKT1 . . . . . . . . . . . . . . . 576
MMBD1000LT1133, 137, 346, 5109

MMBD1005LT1 134, 137, 348, 5111
MMBD1010LT1134, 137, 350, 5113
MMBD2000T1 133, 137, 346, 5109
MMBD2005T1 134, 137, 348, 5111
MMBD2010T1 134, 137, 350, 5113
MMBD2835LT1 . . . . . . . . . 133, 5115
MMBD2836LT1 . . . . . . . . . 133, 5115
MMBD2837LT1 . . . . . . . . . 133, 5117
MMBD2838LT1 . . . . . . . . . 133, 5117
BCX70JLT1 . . . . . . . . . . . . . . . . . . 2216
BCX70KLT1 . . . . . . . . . . . . . . . . . . 2216
BDB01C . . . . . . . . . . . . . . . . 13, 2222
BDB02C . . . . . . . . . . . . . . . . 13, 2225
BDC01D . . . . . . . . . . . . . . . . 13, 2228
BF199 . . . . . . . . . . . . . . . . . . 16, 2231
BF224 . . . . . . . . . . . . . . . . . . 16, 2235
BF240 . . . . . . . . . . . . . . . . . . . . . . . 2239
BF393 . . . . . . . . . . . . . . . . . . 15, 2242
BF420 . . . . . . . . . . . . . . . . . . 15, 2245
M1MA174T1 . . . . . . . . . . . . . . . . . . . 132
MBD54DWT1 . . . . . . . . . . . . . . . . . . 578
MBD101 . . . . . . . . . . . 129, 130, 580
MBD110DWT1 . . . . . . . . . . . 130, 582
MBD301 . . . . . . . . . . . 129, 130, 587
MBD330DWT1 . . . . . . . . . . . 130, 582
MBD701 . . . . . . . . . . . 129, 130, 589
MBD770DWT1 . . . . . . . . . . . 130, 582
MBF4416DW1T1 . . . . . . . . . . . . . . . 121
MBF5457DW1T1 . . . . . . . . . . . . . . . 121
MMBD3000T1 133, 137, 346, 5109

MMBD3005T1 134, 137, 348, 5111
MMBD3010T1 134, 137, 350, 5113
MMBD6050LT1 . . . . . . . . . 132, 5119
MMBD6100LT1 . . . . . . . . . 133, 5121
MMBD7000LT1 . . . . . . . . . 133, 5123
MMBF170LT1 . . . . . . . . . . . . 122, 459
MMBF0201NLT1122, 137, 352, 461
MMBF0202PLT1122, 137, 356, 465
MMBF2201NT1 122, 137, 360, 469
BF421 . . . . . . . . . . . . . . . . . . 15, 2248

BF422 . . . . . . . . . . . . . . . . . . 15, 2245
BF423 . . . . . . . . . . . . . . . . . . 15, 2248
BF493S . . . . . . . . . . . . . . . . . 15, 2251
BF720T1 . . . . . . . . . . . . . . . 117, 2254
BF721T1 . . . . . . . . . . . . . . . 117, 2256
BF844 . . . . . . . . . . . . . . . . . . 15, 2258
BF959 . . . . . . . . . . . . . . . . . . 16, 2262
BFR30LT1 . . . . . . . . . . . . . . . . . . . . 4134
BFR31LT1 . . . . . . . . . . . . . . . . . . . . 4134
MBT3904DW1T1 . . . . . . . . 111, 2286

MBT3904DW9T1 . . . . . . . . . . . . . . . 111
MBT3906DW1T1 . . . 111, 112, 2286
MBT3906DW9T1 . . . . . . . . . . . . . . . 111
MBT3946DW1T1 . . . . . . . . . . . . . . 2286
MBV109T1 . . . . . . . . . . . . . . 128, 591
MDC3105LT1 . . . . . . . . . . . 138, 2818
MDC5001T1 . . . . . . . . . . . . 138, 2823
MGSF1N02LT1 122, 137, 39, 422
MGSF1N03LT1 122, 137, 312, 425
MMBF2201PT1 . . . . . . . . . . . . . . . . 122
MMBF2202PT1 . . . . . 137, 363, 472
MMBF4391LT1 . . . . . . . . . . 122, 4156
MMBF4392LT1 . . . . . . . . . . 122, 4156
MMBF4393LT1 . . . . . . . . . . 122, 4156
MMBF4416LT1 . . . . . . . . . . 121, 4160
MMBF5457LT1 . . . . . . . . . . 121, 4167
MMBF5460LT1 . . . . . . . . . . 121, 4170
MMBF5484LT1 . . . . . . . . . . 121, 4173
MMBFJ175LT1 . . . . . . . . . . 122, 4180
Alphanumeric Index
113
Alphanumeric Index
Device
Page
Device
Page
Device
Page
MMBFJ177LT1 . . . . . . . . . . 122, 4181

MMBFJ309LT1 . . . . . . . . . . 121, 4182
MMBFJ310LT1 . . . . . . . . . . 121, 4182
MMBFU310LT1 . . . . . . . . . 121, 4186
MMBT404ALT1 . . . . . . . . . 115, 2296
MMBT918LT1 . . . . . . . . . . . 114, 2298
MMBT1010LT1116, 136, 2300, 367
MMBT2222ALT1 . . . . . . . . 110, 2303
MMBT2222AWT1 . . . . . . . 111, 2301
MMBT2222LT1 . . . . . . . . . . . . . . . . 2303
MMBV2105LT1 . . . . 123, 125, 5135

MMBV2107LT1 . . . . . . . . . 125, 5135
MMBV2108LT1 . . . . . . . . . 125, 5135
MMBV2109LT1 . . . . 123, 125, 5135
MMBV3102LT1 . . . . 127, 128, 5138
MMBV3401LT1 . . . . 131, 132, 5140
MMBV3700LT1 . . . . 131, 132, 5142
MMFT107T1 . . . . . . . . . . . . . 122, 476
MMFT960T1 . . . . . . . . . . . . . 122, 479
MMFT2406T1 . . . . . . . . . . . . 122, 482
MPN3404 . . . . . . . . . 131, 132, 5149

MPN3700 . . . . . . . . . 131, 132, 5142
MPQ2222 . . . . . . . . . . . . . . . . . . . . 2460
MPQ2222A . . . . . . . . . . . . . . 19, 2460
MPQ2369 . . . . . . . . . . . . . . . 19, 2465
MPQ2483 . . . . . . . . . . . . . . . 19, 2469
MPQ2484 . . . . . . . . . . . . . . . 19, 2469
MPQ2906 . . . . . . . . . . . . . . . . . . . . 2471
MPQ2907 . . . . . . . . . . . . . . . . . . . . 2471
MPQ2907A . . . . . . . . . . . . . . 19, 2471
MMBT2369ALT1 . . . . . . . . 114, 2308

MMBT2369LT1 . . . . . . . . . . 114, 2308
MMBT2484LT1 . . . . . . . . . . 115, 2313
MMBT2907ALT1 . . . . . . . . 110, 2319
MMBT2907AWT1 . . . . . . . 111, 2317
MMBT2907LT1 . . . . . . . . . . . . . . . . 2319
MMBT3640LT1 . . . . . . . . . . 114, 2323
MMBT3904LT1 . . . . . . . . . . 110, 2326
MMBT3904WT1 . . . . . . . . . 111, 2332
MMBT3906LT1 . . . . . . . . . . 110, 2341
MMFT6661T1 . . . . . . . . . . . . 122, 484

MMPQ2222 . . . . . . . . . . . . . . . . . . 2428
MMPQ2222A . . . . . . . . . . . . 19, 2428
MMPQ2369 . . . . . . . . . . . . . 19, 2430
MMPQ2907 . . . . . . . . . . . . . . . . . . 2432
MMPQ2907A . . . . . . . . . . . . 19, 2432
MMPQ3467 . . . . . . . . . . . . . 19, 2434
MMPQ3725 . . . . . . . . . . . . . 19, 2436
MMPQ3904 . . . . . . . . . . . . . 19, 2438
MMPQ3906 . . . . . . . . . . . . . 19, 2440
MPQ3467 . . . . . . . . . . . . . . .
MPQ3725 . . . . . . . . . . . . . . .
MPQ3762 . . . . . . . . . . . . . . .
MPQ3798 . . . . . . . . . . . . . . .
MPQ3799 . . . . . . . . . . . . . . .
MPQ3904 . . . . . . . . . . . . . . .
MPQ3906 . . . . . . . . . . . . . . .
MPQ6001 . . . . . . . . . . . . . . .
MPQ6002 . . . . . . . . . . . . . . .
MPQ6100A . . . . . . . . . . . . . .
MMBT3906WT1 . . . . . . . . . 111, 2332

MMBT4401LT1 . . . . . . . . . . 110, 2346
MMBT4403LT1 . . . . . . . . . . 110, 2351
MMBT5087LT1 . . . . . . . . . . 115, 2356
MMBT5088LT1 . . . . . . . . . . . . . . . . 2362
MMBT5089LT1 . . . . . . . . . . 115, 2362
MMBT5401LT1 . . . . . . . . . . 116, 2366
MMBT5550LT1 . . . . . . . . . . . . . . . . 2370
MMBT5551LT1 . . . . . . . . . . 116, 2370
MMBT6427LT1 . . . . . . . . . . . . . . . . 2374
MMPQ6700 . . . . . . . . . . . . . 19, 2442

MMPQ6842 . . . . . . . . . . . . . . . . . . 2443
MMSD71RKT1 . . . . . . . . . . . . . . . . . 132
MMSD101T1 . . . . . . . . . . . . . . . . . . 130
MMSD301T1 . . . . . . . . . . . 130, 5144
MMSD701T1 . . . . . . . . . . . 130, 5144
MMSD914T1 . . . . . . . . . . . 132, 5147
MMSD1000T1 133, 137, 346, 5109
MMUN2111LT1 . . . . . . . . . 112, 2445
MMUN2112LT1 . . . . . . . . . 112, 2445
MPQ6426 . . . . . . . . . . . . . . . 19, 2506

MPQ6502 . . . . . . . . . . . . . . . 19, 2500
MPQ6600A1 . . . . . . . . . . . . . 19, 2503
MPQ6700 . . . . . . . . . . . . . . . 19, 2509
MPQ6842 . . . . . . . . . . . . . . . 19, 2514
MPQ7041 . . . . . . . . . . . . . . . . . . . . 2518
MPQ7042 . . . . . . . . . . . . . . . 19, 2518
MPQ7043 . . . . . . . . . . . . . . . 19, 2518
MPQ7051 . . . . . . . . . . . . . . . 19, 2520
MPQ7091 . . . . . . . . . . . . . . . . . . . . 2523
MMBT6428LT1 . . . . . . . . . . 115, 2379

MMBT6429LT1 . . . . . . . . . . 115, 2379
MMBT6517LT1 . . . . . . . . . . 116, 2383
MMBT6520LT1 . . . . . . . . . . 116, 2388
MMBTA05LT1 . . . . . . . . . . . . . . . . . 2393
MMBTA06LT1 . . . . . . . . . . . 116, 2393
MMBTA13LT1 . . . . . . . . . . . 115, 2395
MMBTA14LT1 . . . . . . . . . . . 115, 2395
MMBTA20LT1 . . . . . . . . . . . . . . . . . 2400
MMBTA42LT1 . . . . . . . . . . . 116, 2406
MMUN2113LT1
MMUN2114LT1
MMUN2115LT1
MMUN2116LT1
MMUN2130LT1
MMUN2131LT1
MMUN2132LT1
MMUN2133LT1
MMUN2134LT1
MMUN2211LT1
.........
.........
.........
.........
.........
.........
.........
.........
.........
.........
112, 2445
112, 2445
112, 2445
112, 2446
112, 2446
112, 2446
112, 2446
112, 2446
112, 2446
112, 2452
MPQ7093 . . . . . . . . . . . . . . . 19, 2523

MPS404A . . . . . . . . . . . . . . . 17, 2525
MPS650 . . . . . . . . . . . . . . . . 14, 2529
MPS651 . . . . . . . . . . . . . . . . 14, 2529
MPS750 . . . . . . . . . . . . . . . . 14, 2529
MPS751 . . . . . . . . . . . . . . . . 14, 2529
MPS918 . . . . . . . . . . . . . . . . 16, 2532
MPS2222 . . . . . . . . . . . . . . . . . . . . 2534
MPS2222A . . . . . . . . . . . . . . 12, 2534
MPS2369 . . . . . . . . . . . . . . . . . . . . 2539
MMBTA43LT1 . . . . . . . . . . . . . . . . . 2406
MMBTA55LT1 . . . . . . . . . . . . . . . . . 2409
MMBTA56LT1 . . . . . . . . . . . 116, 2409
MMBTA63LT1 . . . . . . . . . . . . . . . . . 2410
MMBTA64LT1 . . . . . . . . . . . 115, 2410
MMBTA70LT1 . . . . . . . . . . . . . . . . . 2412
MMBTA92LT1 . . . . . . . . . . . 116, 2417
MMBTA93LT1 . . . . . . . . . . . . . . . . . 2417
MMBTH10LT1 . . . . . . . . . . 114, 2420
MMBTH24LT1 . . . . . . . . . . 114, 2424
MMUN2212LT1
MMUN2213LT1
MMUN2214LT1
MMUN2215LT1
MMUN2216LT1
MMUN2230LT1
MMUN2231LT1
MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
.........
.........
.........
.........
.........
.........
.........
.........
.........
.........
112, 2452
112, 2452
112, 2452
112, 2452
112, 2452
112, 2452
112, 2452
112, 2452
112, 2452
112, 2452
MPS2369A . . . . . . . . . . . . . . 16, 2539

MPS2907 . . . . . . . . . . . . . . . . . . . . 2542
MPS2907A . . . . . . . . . . . . . . 12, 2542
MPS3563 . . . . . . . . . . . . . . . 16, 2532
MPS3638A . . . . . . . . . . . . . . . . . . . 2546
MPS3640 . . . . . . . . . . . . . . . . . . . . 2552
MPS3646 . . . . . . . . . . . . . . . 16, 2555
MPS3904 . . . . . . . . . . . . . . . 13, 2560
MPS3906 . . . . . . . . . . . . . . . 13, 2566
MPS4124 . . . . . . . . . . . . . . . . . . . . 2572
MMBTH69LT1 . . . . . . . . . . 114, 2426

MMBTH81LT1 . . . . . . . . . . 114, 2427
MMBV105GLT1 . . . . 126, 128, 5125
MMBV109LT1 . . . . . . 126, 128, 591
MMBV409LT1 . . . . . 127, 128, 5127
MMBV432LT1 . . . . . 123, 125, 5129
MMBV609LT1 . . . . . 127, 128, 5131
MMBV809LT1 . . . . . 127, 128, 5133
MMBV2101LT1 . . . . 123, 125, 5135
MMBV2103LT1 . . . . . . . . . 125, 5135
MPF102 . . . . . . . . . . . . . . . . 118, 4190

MPF910 . . . . . . . . . . . . . . . . . 120, 487
MPF930 . . . . . . . . . . . . . . . . . 120, 490
MPF960 . . . . . . . . . . . . . . . . . 120, 490
MPF990 . . . . . . . . . . . . . . . . . 120, 490
MPF4392 . . . . . . . . . . . . . . 119, 4197
MPF4393 . . . . . . . . . . . . . . 119, 4197
MPF6659 . . . . . . . . . . . . . . . 120, 493
MPF6660 . . . . . . . . . . . . . . . 120, 493
MPF6661 . . . . . . . . . . . . . . . 120, 493
Alphanumeric Index
114
MPS4126
MPS4250
MPS5179
MPS6428
MPS6507
MPS6521
MPS6523
MPS6560
MPS6601
MPS6602
19, 2476
19, 2479
19, 2483
19, 2486
19, 2486
19, 2489
19, 2495
19, 2500
19, 2500
19, 2503
. . . . . . . . . . . . . . . . . . . . 2574
. . . . . . . . . . . . . . . 13, 2576
. . . . . . . . . . . . . . . 16, 2578
. . . . . . . . . . . . . . . 13, 2580
. . . . . . . . . . . . . . . . . . . . 2582
. . . . . . . . . . . . . . . 13, 2583
. . . . . . . . . . . . . . . 13, 2583
. . . . . . . . . . . . . . . . . . . . 2594
. . . . . . . . . . . . . . . . . . . . 2596
. . . . . . . . . . . . . . . 12, 2596
Alphanumeric Index
Device
Page
Device
Page
Device
Page
. . . . . . . . . . . . . . . . . . . . 2596
. . . . . . . . . . . . . . . 12, 2596
. . . . . . . . . . . . . . . . . . . . 2602
. . . . . . . . . . . . . . . 14, 2602
. . . . . . . . . . . . . . . 13, 2605
. . . . . . . . . . . . . . . . . . . . 2608
. . . . . . . . . . . . . . . . . . . . 2608
. . . . . . . . . . . . . . . . . . . . 2611
. . . . . . . . . . . . . . . 14, 2611
. . . . . . . . . . . . . . . . . . . . 2614
MSB709RT1 . . . . . . . . . . . 111, 2717

MSB710RT1 . . . . . . . . . . . 111, 2718
MSB1218ART1 . . . . . . . . 111, 2720
MSC2295BT1 . . . . . . . . . 114, 2723
MSC2295CT1 . . . . . . . . . 114, 2723
MSC3130T1 . . . . . . . . . . . . 114, 2724
MSC3930BT1 . . . . . . . . . . . . . . . . 111
MSD601RT1 . . . . . . . . . . 111, 2725
MSD601ST1 . . . . . . . . . . . 111, 2725
MSD602RT1 . . . . . . . . . . 111, 2726
MUN5211DW1T1 . . . . . . . .
MUN5211T1 . . . . . . . . . . . .
MUN5212DW1T1 . . . . . . .
MUN5212T1 . . . . . . . . . . . .
MUN5213DW1T1 . . . . . . .
MUN5213T1 . . . . . . . . . . . .
MUN5214DW1T1 . . . . . . .
MUN5214T1 . . . . . . . . . . . .
MUN5215DW1T1 . . . . . . .
MUN5215T1 . . . . . . . . . . . .
113, 2761
113, 2769
113, 2761
113, 2769
113, 2761
113, 2769
113, 2761
113, 2769
113, 2761
113, 2769
MPS8099 . . . . . . . . . . . . . . . 12, 2614

MPS8598 . . . . . . . . . . . . . . . . . . . . 2614
MPS8599 . . . . . . . . . . . . . . . 12, 2614
MPSA05 . . . . . . . . . . . . . . . . 12, 2619
MPSA06 . . . . . . . . . . . . . . . . 12, 2619
MPSA13 . . . . . . . . . . . . . . . . 14, 2624
MPSA14 . . . . . . . . . . . . . . . . 14, 2624
MPSA17 . . . . . . . . . . . . . . . . 17, 2629
MPSA18 . . . . . . . . . . . . . . . . 13, 2632
MPSA20 . . . . . . . . . . . . . . . . 12, 2636
MSD1010T1 . 116, 136, 2300, 367

MSD1328RT1 . . . . . . . . . 111, 2727
MSD1819ART1 . . . . . . . . 111, 2728
MSD6100 . . . . . . . . . . . . . . . . . . . . 5151
MSD6150 . . . . . . . . . . . . . . . . . . . . 5153
MUN2111T1 . . . . . . . . . . . . 112, 2731
MUN2112T1 . . . . . . . . . . . . 112, 2731
MUN2113T1 . . . . . . . . . . . . 112, 2731
MUN2114T1 . . . . . . . . . . . . 112, 2731
MUN2115T1 . . . . . . . . . . . . 112, 2731
MUN5216DW1T1 . . . . . . .
MUN5216T1 . . . . . . . . . . . .
MUN5230DW1T1 . . . . . . .
MUN5230T1 . . . . . . . . . . . .
MUN5231DW1T1 . . . . . . .
MUN5231T1 . . . . . . . . . . . .
MUN5232DW1T1 . . . . . . .
MUN5232T1 . . . . . . . . . . . .
MUN5233DW1T1 . . . . . . .
MUN5233T1 . . . . . . . . . . . .
113, 2761
113, 2769
113, 2761
113, 2769
113, 2761
113, 2769
113, 2761
113, 2769
113, 2761
113, 2769
MPSA27
MPSA28
MPSA29
MPSA42
MPSA43
MPSA44
MPSA55
MPSA56
MPSA62
MPSA63
. . . . . . . . . . . . . . . . 14, 2642
. . . . . . . . . . . . . . . . . . . . . 2645
. . . . . . . . . . . . . . . . 14, 2645
. . . . . . . . . . . . . . . . 15, 2648
. . . . . . . . . . . . . . . . . . . . . 2648
. . . . . . . . . . . . . . . . 15, 2651
. . . . . . . . . . . . . . . . 12, 2619
. . . . . . . . . . . . . . . . 12, 2619
. . . . . . . . . . . . . . . . . . . . . 2655
. . . . . . . . . . . . . . . . 14, 2655
MUN2116T1
MUN2130T1
MUN2131T1
MUN2132T1
MUN2133T1
MUN2134T1
MUN2211T1
MUN2212T1
MUN2213T1
MUN2214T1
............
............
............
............
............
............
............
............
............
............
112, 2731
112, 2731
112, 2731
112, 2731
112, 2731
112, 2731
112, 2738
112, 2738
112, 2738
112, 2738
MUN5234DW1T1 . . . . . . .
MUN5234T1 . . . . . . . . . . . .
MUN5235DW1T1 . . . . . . .
MUN5311DW1T1 . . . . . . . .
MUN5312DW1T1 . . . . . . .
MUN5313DW1T1 . . . . . . .
MUN5314DW1T1 . . . . . . .
MUN5315DW1T1 . . . . . . .
MUN5316DW1T1 . . . . . . .
MUN5330DW1T1 . . . . . . .
113, 2761
113, 2769
113, 2761
113, 2777
113, 2777
113, 2777
113, 2777
113, 2777
113, 2777
113, 2777
MPSA64
MPSA70
MPSA75
MPSA77
MPSA92
MPSA93
MPSH10
MPSH11
MPSH17
MPSH81
. . . . . . . . . . . . . . . . 14, 2655
. . . . . . . . . . . . . . . . 12, 2658
. . . . . . . . . . . . . . . . 14, 2664
. . . . . . . . . . . . . . . . 14, 2664
. . . . . . . . . . . . . . . . 15, 2666
. . . . . . . . . . . . . . . . . . . . . 2666
. . . . . . . . . . . . . . . . 16, 2669
. . . . . . . . . . . . . . . . 16, 2669
. . . . . . . . . . . . . . . . 16, 2671
. . . . . . . . . . . . . . . . 16, 2673
MUN2215T1 . . . . . . . . . . . .
MUN2216T1 . . . . . . . . . . . .
MUN2230T1 . . . . . . . . . . . .
MUN2231T1 . . . . . . . . . . . .
MUN2232T1 . . . . . . . . . . . .
MUN2233T1 . . . . . . . . . . . .
MUN2234T1 . . . . . . . . . . . .
MUN5111DW1T1 . . . . . . . .
MUN5111T1 . . . . . . . . . . . .
MUN5112DW1T1 . . . . . . . .
112, 2738
112, 2738
112, 2738
112, 2738
112, 2738
112, 2738
112, 2738
113, 2746
113, 2754
113, 2746
MUN5331DW1T1 . . . . . . . 113, 2777

MUN5332DW1T1 . . . . . . . 113, 2777
MUN5333DW1T1 . . . . . . . 113, 2777
MUN5334DW1T1 . . . . . . . 113, 2777
MUN5335DW1T1 . . . . . . . . . . . . . 2777
MV104 . . . . . . . . . . . . 123, 125, 5155
MV209 . . . . . . . . . . . . . 126, 128, 591
MV409 . . . . . . . . . . . . 127, 128, 5127
MV1403 . . . . . . . . . . . 127, 128, 5157
MV1404 . . . . . . . . . . . 127, 128, 5157
MPSL01 . . . . . . . . . . . . . . . . . . . . . 2676
MPSL51 . . . . . . . . . . . . . . . . . . . . . 2680
MPSW01 . . . . . . . . . . . . . . . . . . . . . 2684
MPSW01A . . . . . . . . . . . . . . 14, 2684
MPSW05 . . . . . . . . . . . . . . . . . . . . . 2687
MPSW06 . . . . . . . . . . . . . . . . 13, 2687
MPSW10 . . . . . . . . . . . . . . . . . . . . . 2690
MPSW13 . . . . . . . . . . . . . . . . . . . . . 2693
MPSW14 . . . . . . . . . . . . . . . . . . . . . 2693
MPSW42 . . . . . . . . . . . . . . . . 15, 2696
MUN5112T1 . . . . . . . . . . . .
MUN5113DW1T1 . . . . . . . .
MUN5113T1 . . . . . . . . . . . .
MUN5114DW1T1 . . . . . . . .
MUN5114T1 . . . . . . . . . . . .
MUN5115DW1T1 . . . . . . . .
MUN5115T1 . . . . . . . . . . . .
MUN5116DW1T1 . . . . . . . .
MUN5116T1 . . . . . . . . . . . .
MUN5130DW1T1 . . . . . . .
113, 2754
113, 2746
113, 2754
113, 2746
113, 2754
113, 2746
113, 2754
113, 2746
113, 2754
113, 2746
MV1405
MV1626
MV1628
MV1630
MV1634
MV1638
MV1648
MV1650
MV2101
MV2104
MPSW45 . . . . . . . . . . . . . . . . . . . . . 2699
MPSW45A . . . . . . . . . . . . . . 14, 2699
MPSW51 . . . . . . . . . . . . . . . . . . . . . 2704
MPSW51A . . . . . . . . . . . . . . 14, 2704
MPSW55 . . . . . . . . . . . . . . . . . . . . . 2707
MPSW56 . . . . . . . . . . . . . . . . 13, 2707
MPSW63 . . . . . . . . . . . . . . . . . . . . . 2710
MPSW64 . . . . . . . . . . . . . . . . 14, 2710
MPSW92 . . . . . . . . . . . . . . . . 15, 2713
MSA1022CT1 . . . . . . . . . 114, 2716
MUN5130T1 . . . . . . . . . . . .
MUN5131DW1T1 . . . . . . .
MUN5131T1 . . . . . . . . . . . .
MUN5132DW1T1 . . . . . . .
MUN5132T1 . . . . . . . . . . . .
MUN5133DW1T1 . . . . . . .
MUN5133T1 . . . . . . . . . . . .
MUN5134DW1T1 . . . . . . .
MUN5134T1 . . . . . . . . . . . .
MUN5135DW1T1 . . . . . . .
113, 2754
113, 2746
113, 2754
113, 2746
113, 2754
113, 2746
113, 2754
113, 2746
113, 2754
113, 2746
MV2105 . . . . . . . . . . . 123, 124, 5135

MV2108 . . . . . . . . . . . . . . . . 124, 5135
MV2109 . . . . . . . . . . . 123, 124, 5135
MV2111 . . . . . . . . . . . . . . . . 124, 5135
MV2115 . . . . . . . . . . . 123, 124, 5135
MV7005T1 . . . . . . . . 127, 128, 5160
MV7404T1 . . . . . . . . 127, 128, 5162
P2N2222A . . . . . . . . . . . . . . 17, 2789
P2N2907A . . . . . . . . . . . . . . 17, 2794
PZT651T1 . . . . . . . . . . . . . . 117, 2798
MPS6651
MPS6652
MPS6714
MPS6715
MPS6717
MPS6724
MPS6725
MPS6726
MPS6727
MPS8098
. . . . . . . . . . . 127, 128, 5157

. . . . . . . . . . . . . . . . 124, 5159
. . . . . . . . . . . 123, 124, 5159
. . . . . . . . . . . . . . . . 124, 5159
. . . . . . . . . . . . . . . . 124, 5159
. . . . . . . . . . . 123, 124, 5159
. . . . . . . . . . . . . . . . 124, 5159
. . . . . . . . . . . 123, 124, 5159
. . . . . . . . . . . 123, 124, 5135
. . . . . . . . . . . . . . . . 124, 5135
Alphanumeric Index
115
Alphanumeric Index
Device
PZT751T1 . . . . . . . . . . . . . .
PZT2222AT1 . . . . . . . . . . .
PZT2907AT1 . . . . . . . . . . .
PZTA14T1 . . . . . . . . . . . . . .
PZTA42T1 . . . . . . . . . . . . . .
PZTA64T1 . . . . . . . . . . . . . .
PZTA92T1 . . . . . . . . . . . . . .
Alphanumeric Index
116
Page
117, 2800
117, 2802
117, 2805
117, 2808
117, 2811
117, 2813
117, 2816
Device
Page
Device
Page
PZTA96T1 . . . . . . . . . . . . . . 117, 2817

VN10LM . . . . . . . . . . . . . . . 120, 4101
VN0300L . . . . . . . . . . . . . . . . 120, 496
VN0610LL . . . . . . . . . . . . . . . 120, 498
VN2222LL . . . . . . . . . . . . . . 120, 4103
VN2406L . . . . . . . . . . . . . . . 120, 4106
VN2410L . . . . . . . . . . . . . . . 120, 4108
Selector Guide
Transistors
GreenLine Portfolio
Devices
Small-Signal Field-Effect
Small-Signal Tuning

Surface Mount
Information
Package Outline
Dimensions
Reliability and
Quality Assurance
10
Replacement
Devices
11
Alphanumeric Index

Motorola - Small Signal Transistors FETS and Diodes Data - Dl126rev6

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Selector Guide

Tape and Reel Specifications

Motorola Small-Signal Transistors, FETs and Diodes Device Data

TMOS is a registered trademark of Motorola Inc.

Motorola Small-Signal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1997

Motorola SmallSignal Transistors, FETs and Diodes Device Data

All Rights Reserved

About This Revision

Motorola SmallSignal Transistors, FETs and Diodes Device Data

Motorola Device Classifications

Motorola SmallSignal Transistors, FETs and Diodes Device Data

SmallSignal Tuning and

Tape and Reel Specifications and

Surface Mount Information . . . . . . . . . 71

Package Outline Dimensions . . . . . . . 81

Reliability and Quality Assurance . . . 91

Replacement Devices . . . . . . . . . . . . . 101

Motorola SmallSignal Transistors, FETs and Diodes Device Data

Motorola SmallSignal Transistors, FETs and Diodes Device Data

Motorolas Small Signal TO226 plastic transistors

Table 1. PlasticEncapsulated GeneralPurpose Transistors

Case 2904 TO226AA (TO92)

Devices listed in bold, italic are Motorola preferred devices.

Motorola SmallSignal Transistors, FETs and Diodes Device Data

PlasticEncapsulated Transistors (continued)

Case 2905 TO226AE (1WATT TO92)

Table 2. PlasticEncapsulated LowNoise and Good hFE Linearity

Case 2904 TO226AA (TO92)

Devices listed in bold, italic are Motorola preferred devices.

Motorola SmallSignal Transistors, FETs and Diodes Device Data

PlasticEncapsulated Transistors (continued)

Case 2905 TO226AE (1WATT TO92)

Case 2904 TO226AA (TO92)

Table 4. PlasticEncapsulated HighCurrent Transistors

Case 2905 TO226AE (1WATT TO92)

Case 2904 TO226AA (TO92)

Devices listed in bold, italic are Motorola preferred devices.

Motorola SmallSignal Transistors, FETs and Diodes Device Data

PlasticEncapsulated Transistors (continued)

Case 2905 TO226AE (1WATT TO92) NPN

Case 2905 TO226AE (1WATT TO92) PNP

Case 2904 TO226AA (TO92) NPN

Case 2904 TO226AA (TO92) PNP

Case 2904 TO226AA (TO92)

Devices listed in bold, italic are Motorola preferred devices.

Motorola SmallSignal Transistors, FETs and Diodes Device Data

PlasticEncapsulated Transistors (continued)

Case 2904 TO226AA (TO92) NPN

Case 2904 TO266AA (TO92) PNP

Table 7. PlasticEncapsulated HighSpeed Saturated Switching Transistors

Case 2904 TO226AA (TO92) NPN

Devices listed in bold, italic are Motorola preferred devices.

Motorola SmallSignal Transistors, FETs and Diodes Device Data

PlasticEncapsulated Transistors (continued)

Case 2904 TO226AA (TO92) NPN

Case 2904 TO266AA (TO92) PNP

Table 9. PlasticEncapsulated Telecom Transistors

Case 2904 TO226AA (TO92) NPN

Case 2904 TO226AA (TO92) PNP

Devices listed in bold, italic are Motorola preferred devices.

Motorola SmallSignal Transistors, FETs and Diodes Device Data

Power Dissipation specified at 25C. Single