Smart Low Side Power Switch

HITFET BTS 117TC

Features

Product Summary

Logic Level Input

Drain source voltage

VDS

60

Input Protection (ESD)

On-state resistance

RDS(on)

100 m

=Thermal shutdown with latch

Current limit

I D(lim)

Overload protection

Nominal load current

I D(ISO)

3.5

Short circuit protection

Clamping energy

EAS

1000 mJ

Overvoltage protection
Current

limitation

Status feedback with external input resistor

Analog driving possible
AEC

qualified

Green product (RoHS compliant)

Application
All kinds of resistive, inductive and capacitive loads in switching or
linear applications
C compatible power switch for 12 V and 24 V DC applications
Replaces electromechanical relays and discrete circuits

General Description
N channel vertical power FET in Smart SIPMOS chip on chip technology. Providing embedded protection functions.
V bb

+
LOAD

D rain
2

dv /d t
lim ita tio n

1
IN

ESD

O v erloa d
pro te ctio n

C u rre n t

O ve rvoltag e
p rotection

lim ita tio n

O ve rte m pe rature
p ro te ctio n

Sh
ho
rt circ
c ircu
it
S
ort
uit
pprotection
ro te ctio n

S o u rce

H IT F E T

Datasheet

Rev. 1.0, 2009-07-20

Smart Low Side Power Switch

HITFET BTS 117TC

Maximum Ratings at Tj = 25 C unless otherwise specified

Parameter

Symbol

Drain source voltage

VDS

60

Drain source voltage for short circuit protection

Continuous input current 1)

VDS(SC)

32

Value

IIN

-0.2V VIN 10V

Unit

mA
no limit

VIN < -0.2V or VIN > 10V

| IIN | 2

Operating temperature

Tj

- 40 ... +150

Storage temperature

Tstg

- 55 ... +150

Power dissipation

Ptot

50

EAS

1000

mJ

3000

TC = 25 C
Unclamped single pulse inductive energy
ID(ISO) = 3.5 A
Electrostatic discharge voltage (Human Body Model) VESD
according to MIL STD 883D, method 3015.7 and
EOS/ESD assn. standard S5.1 - 1993
Load dump protection VLoadDump2) = VA + VS

VLD

VIN=low or high; VA =13.5 V

td = 400 ms, RI = 2 , ID =0,5*3.5A
td = 400 ms, RI = 2 , ID = 3.5A

75
70

Thermal resistance
junction - case:

R thJC

2.5

junction - ambient:

R thJA

75

SMD version, device on PCB: 3)

R thJA

45

K/W

1In case of thermal shutdown a minimum sensor holding current of 500 A has to be guaranteed (see also page 3).
2V
Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
3 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70m thick) copper area for Drain connection.
PCB mounted vertical without blown air.

Datasheet

Rev. 1.0, 2009-07-20

Smart Low Side Power Switch

HITFET BTS 117TC

Electrical Characteristics
Parameter

Symbol

at Tj=25C, unless otherwise specified

Values

Unit

min.

typ.

max.

60

73

1.3

1.7

2.2

V
A

Characteristics
Drain source clamp voltage

VDS(AZ)

Tj = - 40 ...+ 150C, ID = 10 mA
Off state drain current

IDSS

VDS = 32 V, Tj = -40...+150 C, VIN = 0 V

Input threshold voltage

VIN(th)

V
A

ID = 0.7 mA
Input current - normal operation, ID<ID(lim):
VIN = 10 V

IIN(1)

30

60

Input current - current limitation mode, ID =ID(lim):

VIN = 10 V

IIN(2)

120

300

Input current - after thermal shutdown, ID=0 A:

VIN = 10 V

IIN(3)

800

2200

4000

Input holding current after thermal shutdown 1)

IIN(H)

Tj = 25 C

500

Tj = 150 C

300

R DS(on)

On-state resistance
VIN = 5 V, ID = 3.5 A, Tj = 25 C
VIN = 5 V, ID = 3.5 A, Tj = 150 C

m
-

90

120

180

240

VIN = 10 V, I D = 3.5 A, T j = 25 C

80

100

VIN = 10 V, I D = 3.5 A, T j = 150 C

160

200

3.5

R DS(on)

On-state resistance

ID(ISO)

Nominal load current (ISO 10483)

VIN = 10 V, VDS = 0.5 V, TC = 85 C

1If the input current is limited by external components, low drain currents can flow and heat the device.
Auto restart behaviour can occur.

Datasheet

Rev. 1.0, 2009-07-20

Smart Low Side Power Switch

HITFET BTS 117TC

Electrical Characteristics
Parameter

Symbol

at T j=25C, unless otherwise specified

Values

Unit

min.

typ.

max.

ID(SCp)

25

ID(lim)

10

15

ton

40

70

toff

70

150

-dVDS/dton

dVDS/dtoff

150

165

Characteristics
Initial peak short circuit current limit

VIN = 10 V, VDS = 12 V
Current limit 1)
VIN = 10 V, VDS = 12 V, tm = 350 s,
Tj = -40...+150 C
Dynamic Characteristics
VIN to 90% ID :
RL = 4.7 , VIN = 0 to 10 V, Vbb = 12 V
Turn-off time
VIN to 10% ID :
Turn-on time

RL = 4.7 , VIN = 10 to 0 V, Vbb = 12 V

Slew rate on

70 to 50% Vbb :

V/s

RL = 4.7 , VIN = 0 to 10 V, Vbb = 12 V

Slew rate off

50 to 70% Vbb:

RL = 4.7 , VIN = 10 to 0 V, Vbb = 12 V

Protection Functions 2)
Thermal overload trip temperature

Tjt

Unclamped single pulse inductive energy

EAS

C
mJ

ID = 3.5 A, Tj = 25 C, Vbb = 32 V

1000

--

--

ID = 3.5 A, Tj = 150 C, Vbb = 32 V

225

--

--

Inverse Diode
VSD

Inverse diode forward voltage

IF = 5*3.5A, tm = 300 S, VIN = 0 V

1Device switched on into existing short circuit (see diagram Determination of I D(lim)). If the device is in on condition
and a short circuit occurs, these values might be exceeded for max. 50 s.

2Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.

Datasheet

Rev. 1.0, 2009-07-20

Smart Low Side Power Switch

HITFET BTS 117TC

Block Diagramm
Terms

Inductive and overvoltage output clamp

RL

V
Z

I IN
1

IN

ID

VDS

Vbb

HITFET

HITFET

VIN

Short circuit behaviour

Input circuit (ESD protection)
V IN
I D(SCp)

IN
I D(Lim)

ID

ESD-ZD I
Source

t0

ESD zener diodes are not designed

for DC current > 2 mA @ VIN >10V.

t0:

tm

t1

t2

Turn on into a short circuit

tm: Measurementpoint for ID(lim)

t1: Activation of the fast temperature sensor and
regulation of the drain current to a level where
the junction temperature remains constant.
t2: Thermal shutdown caused by the second
temperature sensor, achieved by an
integrating measurement.

Datasheet

Rev. 1.0, 2009-07-20

Smart Low Side Power Switch

HITFET BTS 117TC

Maximum allowable power dissipation

On-state resistance

Ptot = f(Tc )

RON = f(Tj ); ID=3.5A; VIN =10V

BTS 117

55

200

RDS(on)

45

Ptot

40
35
30

150
max.

125

100

typ.

25
75

20
15

50

10
25
5
0
0

20

40

60

80

100

120

0
-50

160

-25

25

50

75

100

150

Tj

150

On-state resistance

Typ. input threshold voltage

R ON = f(Tj ); ID= 3.5A; VIN=5V

VIN(th) = f(Tj); ID =0.7mA; VDS =12V

250

2.0

200

1.6

175

VIN(th)

RDS(on)

150

1.4
1.2

max.

125

1.0

100

0.8

typ.

75

0.6

50

0.4

25

0.2

0
-50

-25

25

50

75

100

0.0
-50

150

Tj

Datasheet

-25

25

50

75

100

150

Tj

Rev. 1.0, 2009-07-20

Smart Low Side Power Switch

HITFET BTS 117TC

Typ. transfer characteristics

Typ. output characteristic

ID = f(VIN); VDS =12V; Tj =25C

ID = f(VDS); Tj =25C
Parameter: V IN

10

10
10V
6V
5V

ID

ID

4V

4
Vin=3V

0
0

0
0

VIN

VDS

Transient thermal impedance

Z thJC = f (t p)
parameter : D = t p/T
10

RthJC

K/W

10

D=0.5

0.2
0.1
0.05

10

-1

0.02
0.01
0.005
0

10

-2

10

-7

10

-6

10

-5

10

-4

10

-3

10

-2

10

-1

10

10

tP

Datasheet

Rev. 1.0, 2009-07-20

Smart Low Side Power Switch

HITFET BTS 117TC

Application examples:
Status signal of thermal shutdown by
monitoring input current
R St
IN

V
IN

HITFET

V
bb

V
V
IN

thermal shutdown

V = RST *IIN(3)

Datasheet

Rev. 1.0, 2009-07-20

Smart Low Side Power Switch

HITFET BTS 117TC
Package Outlines

Package Outlines

4.4
10 0.2

1.27 0.1
B
0.05
2.4
0.1

4.7 0.5

2.7 0.3

1.3 0.3

8.5

1)

7.55 1)

9.25 0.2

(15)

1 0.3

0...0.3

0...0.15
1.05

0.5 0.1

0.75 0.1

8 MAX.

2.54
5.08

0.25

A B

1) Typical
Metal surface min. X = 7.25, Y = 6.9
All metal surfaces tin plated, except area of cut.
Figure 1

0.1 B

GPT09085

PG-TO263-3-2 (Plastic Dual Small Outline Package) (RoHS-Compliant)

To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pbfree finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
Please specify the package needed (e.g. green package) when placing an order

You can find all of our packages, sorts of packing and others in our
Infineon Internet Page Products: http://www.infineon.com/products.
Datasheet

Dimensions in mm
Rev. 1.0, 2009-07-20

Smart Low Side Power Switch

HITFET BTS 117TC
Revision History

Revision History

Version

Date

Changes

Rev. 1.0

2009-07-20

intial released Datasheet

Datasheet

10

Rev. 1.0, 2009-07-20

Edition 2009-07-20
Published by
Infineon Technologies AG
81726 Munich, Germany
Infineon Technologies AG 2009.
All Rights Reserved.
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characteristics (Beschaffenheitsgarantie). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
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question please contact your nearest Infineon Technologies Office.
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