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SEMICONDUCTOR TECHNICAL DATA





 



 

!# 

"   !

. . . for generalpurpose power amplifier and switching applications.

25 A Collector Current
Low Leakage Current ICEO = 1.0 mA @ 30 and 60 V
Excellent DC Gain hFE = 40 Typ @ 15 A
High Current Gain Bandwidth Product hfe = 3.0 min @ IC = 1.0 A,
f = 1.0 MHz

v
MAXIMUM RATINGS

Symbol

TIP35A
TIP36A

TIP35B
TIP36B

TIP35C
TIP36C

Unit

*Motorola Preferred Device

VCEO

60 V

80 V

100 V

Vdc

CollectorBase Voltage

VCB

60 V

80 V

100 V

Vdc

EmitterBase Voltage

VEB

5.0

Vdc

Collector Current Continuous

Peak (1)

IC

25
40

Adc

25 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60 100 VOLTS
125 WATTS

Base Current Continuous

IB

5.0

Adc

Total Power Dissipation

@ TC = 25_C
Derate above 25_C

PD

125
1.0

Watts
W/_C

TJ, Tstg

65 to + 150

_C

ESB

90

mJ

Rating

CollectorEmitter Voltage

Operating and Storage Junction

Temperature Range
Unclamped Inductive Load

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

JunctionToFreeAir Thermal Resistance

(1) Pulse Test: Pulse Width = 10 ms, Duty Cycle

Symbol

Max

Unit

RJC

1.0

_C/W

RJA

35.7

_C/W

CASE 340D02
TO218AC

10%.

PD, POWER DISSIPATION (WATTS)

125

100

75

50

25
0

25

50
75
125
100
TC, CASE TEMPERATURE (C)

150

175

Figure 1. Power Derating

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

Motorola, Inc. 1996

Motorola Bipolar Power Transistor Device Data

 
 
 
 
 
 

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

60
80
100

1.0
1.0

Unit

OFF CHARACTERISTICS

CollectorEmitter Sustaining Voltage (1)

(IC = 30 mA, IB = 0)

VCEO(sus)

TIP35A, TIP36A
TIP35B, TIP36B
TIP35C, TIP36C

CollectorEmitter Cutoff Current

(VCE = 30 V, IB = 0)
(VCE = 60 V, IB = 0)

Vdc

ICEO

mA

TIP35A, TIP36A
TIP35B, TIP35C, TIP36B, TIP36C

CollectorEmitter Cutoff Current

(VCE = Rated VCEO, VEB = 0)

ICES

0.7

mA

EmitterBase Cutoff Current

(VEB = 5.0 V, IC = 0)

IEBO

1.0

mA

25
15

75

1.8
4.0

2.0
4.0

ON CHARACTERISTICS (1)

DC Current Gain
(IC = 1.5 A, VCE = 4.0 V)
(IC = 15 A, VCE = 4.0 V)

hFE

CollectorEmitter Saturation Voltage

(IC = 15 A, IB = 1.5 A)
(IC = 25 A, IB = 5.0 A)

VCE(sat)

BaseEmitter On Voltage
(IC = 15 A, VCE = 4.0 V)
(IC = 25 A, VCE = 4.0 V)

VBE(on)

Vdc

Vdc

DYNAMIC CHARACTERISTICS

SmallSignal Current Gain

(IC = 1.0 A, VCE = 10 V, f = 1.0 kHz)

hfe

25

CurrentGain Bandwidth Product

(IC = 1.0 A, VCE = 10 V, f = 1.0 MHz)

fT

3.0

MHz

(1) Pulse Test: Pulse Width = 300 s, Duty Cycle

2.0%.

VCC

TURNON TIME

RL
+ 2.0 V
0

3.0
TO SCOPE
tr 20 ns

10
RB

tr
20 ns

30 V

11.0 V

2.0

10 TO 100 S
DUTY CYCLE 2.0%
RL

+ 9.0 V

3.0
TO SCOPE
tr 20 ns

10
RB
VBB

+ 4.0 V

FOR CURVES OF FIGURES 3 & 4, RB & RL ARE VARIED.

INPUT LEVELS ARE APPROXIMATELY AS SHOWN.
FOR NPN, REVERSE ALL POLARITIES.

Figure 2. Switching Time Equivalent Test Circuits

0.3

tr

0.2
0.1

11.0 V

tr 20 ns
10 to 100 s
DUTY CYCLE 2.0%

0.7
0.5

30 V
t, TIME ( s)

VCC

TURNOFF TIME

TJ = 25C
IC/IB = 10
VCC = 30 V
VBE(off) = 2 V

1.0

td

(PNP)
(NPN)

0.07
0.05
0.03
0.02
0.3

0.5 0.7 1.0

5.0 7.0 10
2.0 3.0
IC, COLLECTOR CURRENT (AMPERES)

20

Figure 3. TurnOn Time

Motorola Bipolar Power Transistor Device Data

30


 
 
 
 
 
 
1000
(PNP)
(NPN)

3.0

ts

t, TIME ( s)

2.0

500
200

TJ = 25C
VCC = 30 V
IC/IB = 10
IB1 = IB2

hFE , DC CURRENT GAIN

10
7.0
5.0

ts

1.0
0.7
0.5

tf

0.3
tf

0.2

VCE = 4.0 V
TJ = 25C

100
50
20
10
PNP
NPN

5.0
2.0

0.1
0.3 0.5 0.7

1.0
1.0
2.0 3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (AMPERES)

20

0.1

30

0.2

100
IC, COLLECTOR CURRENT (AMPS)

FORWARD BIAS

300 s

50
30
20

TC = 25C
1.0 ms

10
10 ms
5.0
2.0

dc
SECONDARY BREAKDOWN
THERMAL LIMIT
BONDING WIRE LIMIT

1.0
0.5
0.3
0.2
0

REVERSE BIAS

TIP35A, 36A
TIP35B, 36B
TIP35C, 36C
2.0 3.0
5.0 7.0 10
20 30
50 70 100
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)

1.0

Figure 6. Maximum Rated Forward Bias

Safe Operating Area

40
IC, COLLECTOR CURRENT (AMPS)

For inductive loads, high voltage and high current must be

sustained simultaneously during turnoff, in most cases, with
the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltagecurrent conditions during reverse biased turnoff. This rating is verified under clamped
conditions so that the device is never subjected to an avalanche mode. Figure 7 gives RBSOA characteristics.

100

50

Figure 5. DC Current Gain

Figure 4. TurnOff Time

There are two limitations on the power handling ability of a

transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 6 is based on TC = 25_C; T J(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC
25_C. Second breakdown limitations do not derate the same as thermal limitations.

0.5 1.0
2.0
5.0 10
20
IC, COLLECTOR CURRENT (AMPS)

TJ 100C

30
25
20

TIP35C
TIP36C

15
TIP35B
TIP36B

10
TIP35A
TIP36A

5.0
0

10

40
60
80
20
30
50
70
90
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)

100

Figure 7. Maximum Rated Forward Bias

Safe Operating Area

Motorola Bipolar Power Transistor Device Data


 
 
 
 
 
 
TEST CIRCUIT
VCE MONITOR

L1
(SEE NOTE A)
RBB1

MJE180

TUT

20

INPUT

L2
(SEE NOTE A)

50

RBB2 = 100

50

VCC = 10 V
+

IC MONITOR

VBB2 = 0

RS = 0.1

VBB1 = 10 V
+

VOLTAGE AND CURRENT WAVEFORMS

tw = 6.0 ms
(SEE NOTE B)
5.0 V
INPUT
VOLTAGE
0
100 ms

COLLECTOR
CURRENT

3.0 A

0
10 V

COLLECTOR
VOLTAGE

V(BR)CER
NOTES:
A. L1 and L2 are 10 mH, 0.11 , Chicago Standard Transformer Corporation C2688, or equivalent.
B. Input pulse width is increased until ICM = 3.0 A.
C. For NPN, reverse all polarities.

Figure 8. Inductive Load Switching

Motorola Bipolar Power Transistor Device Data


 
 
 
 
 
 
PACKAGE DIMENSIONS

C
Q

U
S

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.

4
DIM
A
B
C
D
E
G
H
J
K
L
Q
S
U
V

L
1

J
H

MILLIMETERS
MIN
MAX

20.35
14.70
15.20
4.70
4.90
1.10
1.30
1.17
1.37
5.40
5.55
2.00
3.00
0.50
0.78
31.00 REF

16.20
4.00
4.10
17.80
18.20
4.00 REF
1.75 REF

STYLE 1:
PIN 1.
2.
3.
4.

INCHES
MIN
MAX

0.801
0.579
0.598
0.185
0.193
0.043
0.051
0.046
0.054
0.213
0.219
0.079
0.118
0.020
0.031
1.220 REF

0.638
0.158
0.161
0.701
0.717
0.157 REF
0.069

BASE
COLLECTOR
EMITTER
COLLECTOR

CASE 340D02
ISSUE B

Motorola Bipolar Power Transistor Device Data


 
 
 
 
 
 

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*TIP35/D*

Motorola Bipolar Power Transistor Device Data

TIP35/D