UNISONIC TECHNOLOGIES CO.

, LTD
MJE13001

NPN SILICON TRANSISTOR

NPN SILICON POWER

TRANSISTOR

FEATURES

* Collector-base voltage: V(BR)CBO=600V

* Collector current: IC=0.2A

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
MJE13001L-x-AB3-A -R
MJE13001G-x-AB3-A-R
MJE13001L-x-AB3-F -R
MJE13001G-x-AB3-F-R
MJE13001L-x-T92-B
MJE13001G-x-T92-B
MJE13001L-x-T92-K
MJE13001G-x-T92-K
MJE13001L-x-T92-A-B
MJE13001G-x-T92-A-B
MJE13001L-x-T92-A-K
MJE13001G-x-T92-A-K

www.unisonic.com.tw
Copyright 2013 Unisonic Technologies Co., Ltd

Package
SOT-89
SOT-89
TO-92
TO-92
TO-92
TO-92

Pin Assignment
1
2
3
E
C
B
B
C
E
B
C
E
B
C
E
E
C
B
E
C
B

Packing
Tape Reel
Tape Reel
Tape Box
Bulk
Tape Box
Bulk

1 of 3
QW-R201-055.H

MJE13001

NPN SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATINGS

PARAMETER
Collector-Emitter Voltage
Collector-Base Voltage
Emitter Base Voltage
Collector Current

RATINGS
UNIT
400
V
600
V
7
V
200
mA
SOT-89
550
Collector Power Dissipation
PC
mW
TO-92
750
Junction Temperature
TJ
+150
C
Storage Temperature
TSTG
-55 ~ +150
C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

SYMBOL
VCEO
VCBO
VEBO
IC

ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified)

PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage

SYMBOL
BVCBO
BVCEO

Emitter-Base Breakdown Voltage

Base-Emitter Voltage
Collector Cutoff Cut-Off Current
Collector Emitter Cut-Off Current
Emitter Cutoff Cut-Off Current
ON CHARACTERISTICS

BVEBO
VBE
ICBO
ICEO
IEBO
hFE1*
hFE2
VCE(SAT)

DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL-SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product
Resistive Load
Storage Time
Fall Time

TEST CONDITIONS
IC=100A, IE=0
IC=1mA, IB=0
IE=100A, IC=0
IE=100 mA
VCB=600V, IE=0A
VCE=400V, IB=0
VEB=7V, IC=0A

MIN TYP MAX

600
400
7
1.1
100
200
100

VCE=20 V, IC=20mA
VCE=10V, IC=0.25mA
IC=50mA, IB=10mA
IC=50mA, IB=10mA

10
5

fT

IC=20mA,VCE=20V,f=1MHz

tS
tF

IC=50mA, IB1=-IB2=5mA,
VCC=45V

VBE(SAT)

UNIT
V
V
V
V
A
A
A

70
0.5
1.2

V
V
MHz

1.5
0.3

s
s

CLASSIFICATION OF hFE1*

RANK
A
RANGE 10-15

B
15-20

C
20-25

D
25-30

E
30-35

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

F
35-40

G
40-45

H
45-50

I
50-55

J
55-60

K
60-65

L
65-70

2 of 3
QW-R201-055.H

MJE13001

NPN SILICON TRANSISTOR

TYPICAL CHARACTERISTICS

Capacitance,COB (pF)

Saturation Voltage,VBE(SAT),VCE(SAT)

DC Current Gain,hFE

Collecter Current,IC (mA)

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

3 of 3
QW-R201-055.H