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Introduction
Consider the cascade connection of two CMOS inverter circuits shown in Fig. 3.1. The
parasitic capacitances associated with each MOSFET are:
C gd
and C gs : The gate to drain and gate to source capacitance are primarily due to the
gate overlap with diffusion.
C db and C sb : The drain to body and source to body capacitances are voltage
dependent junction capacitances.
C g : the gate capacitance is due to the thin-oxide capacitance over the gate area.
C int : The interconnect capacitance represents the parasitic capacitance contribution of
the metal or polysilicon connection between the two inverters.
It is assumed that a pulse wave form is applied to the input of the first-stage inverter. The
objective is to analyze the time-domain behaviour of the first-stage output Vout .
The problem of analyzing the output voltage waveform is fairly complicated, even for
this relatively simple circuit, since a number of nonlinear voltage dependent capacitances
are involved. To simplify the problem, the capacitances of Fig 3.1 are converted to a
lumped linear capacitance connected between the output node of the inverter to ground,
as shown in Fig. 3.2, where C load is defined as
C load C gd , n C gd , p C db, n C db, p C int C g
(3.1)
Note some of the parasitic capacitance components shown in Fig. 3.1 do not appear in
this lumped capacitance expression. Since the source-to-substrate voltages of both
transistors are always equal to zero, the capacitances C sb,n and C sb, p are zero. The
capacitances C gs ,n and C gs , p are also not included because they are connected between the
input node and ground (or power supply).
Using Fig 3.2, the inverter transient response is reduced to finding the charge-up and
charge-down times of a single capacitance which is charged and discharged through one
transistor. The delay times calculated using a single using C load may be slightly
overestimate the actual inverter delay, but this is not considered a significant deficiency in
a first-order approximation.
Figure 3.2 First stage CMOS inverter with lumped output load capacitance
Delay-Time Definitions
This section describes some commonly used delay definitions. The input and output
voltage waveforms of a typical inverter are shown in Fig. 3.3. The propagation delay
times PHL and PLH determine the input-to-output signal delay during high-to-low and
low-to-high transitions of the output, respectively. By definition, PHL is the time delay
between the V50% -transition of the rising input voltage and the V50% -transition of the
falling output voltage. Similarly, PLH is defined as the time delay between the V50% transition of the falling input voltage and the V50% -transition of the rising output voltage.
Figure 3.3 Input and output voltage waveforms of a typical inverter and the definitions of
propagation delay times. The input voltage waveform is idealized as a step response.
To simplify the analysis of the delay expressions, the input voltage is usually assumed
to be an ideal step pulse with zero rise and fall times. Under this assumption, PHL
becomes the time required for the output voltage to fall from VOH to V50% level, and PLH
becomes the time required for the output voltage to rise from VOL to V50% level. The
voltage V50% is defined as
V50% VOL
1
1
(VOH VOL ) (VOH VOL )
2
2
(3.2)
The propagation delay times PHL and PLH labelled in Fig. 6.3 are defined as
PHL t1 t 0
PHL t 3 t 2
(3.3)
The average propagation delay P of the inverter characterizes the average time required
for the input signal to propagate through the inverter
P
PHL PLH
2
(3.4)
Fig. 3.4 provides the definitions of the output voltage rise and fall times. The rise time
rise is defined here as the time required for the output voltage to rise from the V10% level
to the V90% level. Similarly, the fall time fall is defined here as the time required for the
output voltage to fall from the V90% level to the V10% level. The voltage levels V10% and
V90% are defined as
(3.5)
(3.6)
Thus the rise and fall times defined in Fig. 3.4 are obtained:
fall t B t A
rise t D t C
(3.7)
Note that other delay definitions using 20% and 80% voltages levels have also been used.
C load V HL
I avg , HL
C load V LH
I avg , LH
(3.8)
(3.9)
The average current during high-to-low transition and low-to-high transition can be
calculated by using the current values at the beginning and end of the transitions as
1
iC (Vin VOH , Vout VOH ) iC (Vin VOH , Vout V50% )
2
1
iC (Vin VOL , Vout VOL ) i C (Vin VOL , Vout V50% )
2
I avg , HL
(3.10)
I avg , LH
(3.11)
dV out
i C i D , p i D, n
dt
(3.12)
For the rising input case, the output voltage is assumed to be VOH . When the input
voltages switches from low VOL to high VOH , the nMOS transistor is turned on and it
starts to discharge the load capacitance. At the same time, the pMOS transistor is
switched off and
i D, p 0
(3.13)
The circuit in Fig. 3.2 can now be reduced to Fig. 3.5. The differential equation
describing the discharge event of Fig. 3.5 is
Figure 3.5 Equivalent circuit of the CMOS inverter during high to low output transition.
C load
dV out
i D , n
dt
(3.14)
The input and output voltage waveforms during this high-to-low transition are illustrated
in Fig. 3.6. When the nMOS transistor starts conducting, it initially operates in the
saturation region. When the output voltage falls below (V DD VT ,n ), the nMOS transistor
starts to conduct in the linear region (These two operating regions are labelled in Fig.
3.6). First, consider the nMOS transistor operating in saturation.
i D,n
Kn
K
(Vin VT , n ) 2 n (VOH VT ,n ) 2
2
2
(3.15)
Since the saturation current is practically independent of the output voltage (neglecting
channel-length modulation), the solution of (3.14) is the time interval t 0 to t1' (labelled in
Fig. 3.6) is
'
t t 1
t t
V out V OH V T ,n
dt C load
V out V OH
1
i D, n
2 Cload
dV out
K n (VOH VT , n ) 2
V out VOH V T ,n
out V OH
dVout
(3.16)
2 Cload VT ,n
K n (VOH V T , n ) 2
Figure 3.6 Input and output voltage waveforms during high-to-low transition
(3.17)
At t t1' , the output voltage will be equal to (VOH VT ,n ) and the transistor will be at the
saturation-linear region boundary. Next, consider the nMOS transistor operating in the
linear region.
i D ,n
Kn
K
2
2
2(Vin VT ,n )Vout Vout
n 2(VOH VT ,n )Vout Vout
2
2
(3.18)
Substituting (3.18) into (3.14) for the time interval t1' and t1 , yields
t t1
t t
'
1
V out V 50%
dt Cload
Vout V OH VT ,n
i
D,n
1
dVout Cload V out V 50%
Vout VOH VT ,n K 2(V V )V V 2
OH
T ,n
out
out
n
dV
out
(3.19)
Evaluating (3.19), yields
t1 t1'
2(VOH VT ,n ) V50 %
ln
VT , n )
V50 %
C load
K n (VOH
(3.20)
The propagation delay time from high to low output ( PHL ) can be found by adding (3.17)
and (3.20) and substituting V50% (VOH VOL ) / 2 to obtain
PHL
2VT , n
4 (VOH VT , n )
Cload
ln
1
K n (VOH VT ,n ) VOH VT ,n
V OH VOL
(3.21)
For the CMOS inverter, VOH V DD and VOL 0 , thus (3.21) can be written as
PHL
2VT , n
4 (V DD VT , n )
Cload
ln
1
K n (VDD VT , n ) VDD VT ,n
V DD
(3.22)
When the input voltage switches from high VOH to low VOL , the nMOS transistor is cut
off, and the load capacitance is being charged up through the pMOS transitor. Following
a very similar derivation procedure, the propagation delay time PLH obtained is
PLH
K p (VOH
2 | VT , p |
2 (VOH VOL | VT , p |)
C load
ln
1
(3.23)
Substituting V50% (VOH VOL ) / 2 , VOH V DD and VOL 0 , into (3.23) yields
PLH
2 | VT , p |
4 (V DD | VT , p |)
C load
ln
1
K p (V DD | VT , p |) VDD | VT , p |
V DD
(3.24)
Comparing the delay equations of (3.22) and (3.24), the sufficient conditions required
for PHL PLH ,
VT , n | VT , p | and K n K p or ( W p / W n n / p )
(3.25)
R av
V SAT V LIN
I
SAT I LIN
(3.26)
where V SAT and V LIN correspond to two points on the I D - V DS curve. For example, Fig
3.7 selects the two points at
V SAT V DD
V LIN (V DD VT ,n ) / 2
(3.27)
(3.28)
At Vout V SAT , the nMOS transistor is in saturation mode, while at Vout V LIN , the nMOS
transistor is in linear mode. Thus, the currents I SAT and I LIN labelled in Fig 3.7 are
calculated as
ID
Vin=VGS=VDD
I SAT
ILIN
VLIN=(VDD+VT,n)/2
VSAT=VDD
Vout=VDS
I SAT
I LIN
Kn
(V DD VT , n ) 2
2
(3.29)
2
(V DD VT , n ) (V DD VT , n ) 3
K n
(V DD VT , n ) 2
2 (V DD VT , n )
8
2
2
2
(3.30)
The discharge of the load capacitance from high to low output voltage is obtained by
solving the RC circuit in which the resistor R av is connected with C load to obtain
Vout V DD e t /( Rav Cload )
(3.31)
PHL
(3.32)
A similar approach can be developed to calculate the propagation delay from low to high
output PLH .
2
PLH ( actual ) PLH
( step input )
/2
(3.33)
(3.34)
The values PHL ( step input ) and PLH ( step input ) denote the propagation delay time values
calculated assuming a step pulse input waveform at the input. While the expressions of
(3.33) and (3.34) are purely empirical, they provide a simple estimation of how much the
propagation delays are increased as a result of nonzero input rise and fall times.
Kn
2
2(VGS VT , n )V DS V DS
2
i D,n
Kn
(Vin VT , n ) 2
2
(3.35)
The equations of (3.35) can be replaced with more accurate current-voltage relationships
to improve the propagation delay calculations; however this usually increases the
computational complexity of the problem.
C (V90 % V10% )
C V
1
I avg
I (Vin VOH , V out V 90% ) I (Vin V OH , V out V10% )
2
C (V90% V10% )
C V
1
I avg
I (Vin V OL , V out V90% ) I (V in VOL , Vout V10% )
2
fall
rise
(3.36)
(3.37)
Next, the rise and fall time equations are derived using the differential equation approach.
To calculate fall , the nMOS transistor operates in the saturation region for
VOH VT 0, n V out V90% and operates in the linear region for V10% V out VOH VT 0, n .
Following an approach similar to (3.16) and (3.19), the fall time fall is obtained by
solving the following integral
fall
2 C load
K n (VOH VT , n )
V out V OH VT 0 ,n
Vout V10 %
Vout V90 %
V out VOH VT 0, n
dVout 2C load
dVout
2
K n 2 (V OH VT , n )V out Vout
(3.38)
fall
2 (V OH VT , n ) V10 %
ln
VT , n )
V10%
C load
K n (V OH
(3.39)
fall
2 C load (VT , n 0. 1V DD )
K n (V DD VT ,n ) 2
1. 9V DD 2VT , n
ln
VT , n )
0 .1V DD
C load
K n (V DD
(3.40)
rise
Cload
K n (V OH V OL | VT , p
2 (V OH V OL | VT , p |) (VOH V90% )
ln
|)
VOH V90%
(3.41)
Using (3.5), (3.6) and setting VOL 0 , VOH V DD (3.41) becomes
rise
2Cload (| VT , p | 0 .1VDD )
2
K n (VDD | VT , p |)
1 .9VDD 2 | VT , p |
Cload
ln
K n (VDD | VT , p |)
0 .1VOH
(3.42)
The rise and fall times of the output voltage (i.e. fall and rise ) can also be calculated
using the RC time constant method. Using (3.31), the transition time of fall is measured
between the time at which Vout 0.9V DD and Vout 0.1V DD as
fall
0. 1
R av C load ln
2 .2 R av C load
0 .9
(3.43)
Wn
Ln
2VT ,n
C load
4 (V DD VT ,n )
ln
1
*
V
V
C
(
V
V
)
DD
T
,
n
DD
PHL n ox
DD
T ,n
(3.44)
*
Similarly, the (W/L)-ratio of the pMOS transistor to satisfy a given target value of PLH
Wp
Lp
2 | VT , p |
4(V DD | VT , p |)
Cload
ln
1
*
V | VT, p |
V DD
PLH p C ox (V DD | VT , p |) DD
(3.45)
In most cases, the transistor sizes found from delay requirements must also meet other
design requirements such as noise margins and logic inversion threshold.
(3.46)
Note, that the fan-out capacitance C g is also a function of the device dimensions in the
next-stage gate(s). Note that any effort to increase the channel width of nMOS and pMOS
transistors in order to reduce delay will inevitably increase the intrinsic components of the
load capacitance.
To gain some insight into the transistor sizing problem under delay constraints, and to
simplify the analysis, the load capacitance of equation (3.46) is typically expressed as a
linear function with respect to the device dimensions W n and W p , as
C load 0 nW n pW p
(3.47)
0 ( n / R p )W p
PLH p
Wp
(3.48)
(3.49)
Ln
n C ox (V DD
2VT ,n
4(V DD VT , n )
ln
1
VT , n ) V DD VT , n
V DD
Lp
p C ox (V DD | VT , p
2 | VT , p |
4(V DD | VT , p |)
ln
1
|) V DD | V T , p |
V DD
(3.50)
(3.51)
Note that the channel lengths Ln and L p are usually fixed and equal to each other and are
*
set by the process technology that is being used. Given the target delay values of PHL
and
*
PLH , the minimum channel widths of the nMOS and pMOS transistors which satisfy
these delay constraints can be calculated from (3.48) and (3.49), by solving W n and W p ,
respectively.
An important conclusion from (3.48) and (3.49), is that there exists an inherent
limitation to the switching speed in CMOS inverters, due to the parasitic capacitances
that are functions of W n and W p . It can be seen that increasing W n and W p to reduce the
propagation delay times will have a diminishing influence upon delay beyond a certain
value, and the delay values will asymptotically approach a limit value for large W n and
W p . From (3.48) and (3.49), the limit delay values are
p n / R p
PHL n n R p
PLH
(3.52)
(3.53)
To illustrate some of the fundamental issues of this section, consider the design of a
CMOS inverter using 0.8m technology parameters (i.e. The channel lengths of the
nMOS and pMOS transistors are Ln L p 0.8m ). The power supply voltage is 3.3V; the
extrinsic capacitance component of the load is 100fF. The transistor aspect ratio is
R (W p / W n ) 2.75 . Fig. 3.8 shows the SPICE simulations when the transistor width is
varied from W n 2m to W n 20m . As expected, the inverter with the smallest transistor
dimensions ( W n 2m and W p 5.5m ) has the largest propagation delay. The delay is
reduced by increasing the channel widths of both the nMOS and pMOS devices. Initially,
the amount of delay reduction can be significant, however, the delay reduction gradually
diminishes when the transistor widths are further increased, and the delays approach limit
values due to the technology-related parameters described by (3.52) and (3.53). Fig. 3.9
shows the propagation delay PHL as a function of the nMOS channel width. The delay
asymptotically approaches a limit value of about 0.2ns, which is mainly determined by
technology-specific parameters.
Figure 3.8 Simulated output voltage waveforms of CMOS inverter obtained for five
different designs
Figure 3.9 Propagation delay PHL as a function of the nMOS channel width (obtained by
SPICE simulation)
Gate capacitance is a function of the device dimensions in the next gate and is equal
to.
C g C gb,n C gb, p where C gb, n C ox W n Lmask , n and C gb, p C ox W p Lmask , p
C int :
where
W
LD
Lmask
L
and the pMOS transistor starts conducting. This causes C load to charge through the pMOS
transistor.
Assuming periodic input and output waveforms, the average power dissipated by any
device over one period T, is:
Pavg
1
v( t) i( t) dt
T 0
(3.54)
During switching, the nMOS and pMOS transistors in a CMOS inverter conduct current
for one-half period each. The average power dissipated by the CMOS inverter is
calculated as
Pavg
1
T
T / 2
dVout
V out C load
dt
T
dV out
dt (V DD Vout ) C load
dt
T/2
dt
(3.55)
1
2
2
C load V DD
fC load V DD
T
(3.56)
Figure 3.12 Typical input output voltage and the capacitor current waveform during
switching of the CMOS inverter
dV y
dt
is
Vy
Ry
(3.57)
Figure 3.14 The power meter circuit used for the simulation of average dynamic power
dissipation of an arbitrary circuit
V y ( t)
Cy
R C
y y
i DD ( )d
(3.58)
and setting
1
i DD ( )d
T 0
(3.59)
Note that (3.59) corresponds to the average power drawn from the power supply source
over one period. Thus the voltage V y at t=T gives the average power dissipation.
The power meter circuit of Fig. 3.14 can easily be implemented in SPICE to calculate
the average power dissipation of arbitrary circuits. In addition, this technique takes into
account the additional power dissipation due to short-circuit currents, which may arise
because of nonideal input conditions as well as leakage currents.
Power-Delay Product
The power delay product is the average energy required for a gate to switch its output
voltage from low to high and from high to low and is defined as
(3.60)
Following the analysis of (3.55)-(3.56), the amount of energy required to switch the
output is
2
PDP C load V DD
(3.61)
The energy of (3.61) is mainly dissipated as heat when the nMOS and pMOS transistors
conduct current during switching.
Note that calculating PDP using (3.61) and average power using (3.56) may result in a
misleading interpretation of the amount of energy/power used by the circuit (due to
leakage and short-circuit currents) . Thus design engineers often use (3.56) and (3.61) for
performance comparisons.