The p-n junction diode is a

(A) Passive device

(B) Vacuum device
(C) Unilateral device
(D) Bilateral device
(NET SEP 13)
A semiconductor has ______
temperature co-efficient of resistance
(A) Zero (B) Positive
(C) Negative (D) One
(NET SEP 13)
A JFET has
(A) One built-in diode
(B) Two built-in diode
(C) Three built-in diode
(D) Four built-in diode

(NET SEP 13)

Arrange the following in terms of

their increasing conductivity :
1. Copper
2. Steel
3. Leather
4. Rubber.The correct sequence is
(A) 4, 3, 2, 1
(B) 4, 3, 1, 2
(C) 3, 4, 2, 1
(D) 2, 1, 3, 4
(NET SEP 13)
Following are the process steps to
fabricate an IC :
1. Crystal growth
2. Epitaxial growth
3. Photo etching
4. Diffusion
5. Vacuum evaporation of
Aluminium
The correct sequence of fabrication is
(A) 1, 5, 3, 4, 2
(B) 1, 2, 3, 4, 5
(C) 1, 3, 2, 4, 5
(D) 1, 2, 4, 3, 5
(NET SEP 13)

Match the lists :

(Band gap in
eV)

(Materials)

a. 0.67
i. Ga As
b. 1.1
ii. Cadmium sulphate
c. 1.4
iii. Si
d. 2.4
iv. Ge
The correct matching order is
A
b
c
d
(A) iv
iii
i
ii
(B) iii
ii
i
iv
(C) iv
i
iii
ii
(D) ii
iii
i
iv
(NET SEP 13)
Semiconductors are sensitive to
(A) heat
(B) magnetic field
(C) light energy
(D) all of the above
(NET SEP 13)
Which of the following elements is a
semiconductor ?
(A) Germanium
(B) Copper
(C) Carbon
(D) Phosphorous
(NET SEP 13)
When a reverse bias is applied to a
junction diode
(A) potential barrier is lowered
(B) majority carrier current is
increased
(C) minority carrier current is
increased
(D) potential barrier is raised (NET SEP 13)
Photo-diode is reverse biased
because
(A) only one side is illuminated
(B) majority swept are reverse
biased across the function
(C) reverse current is small as
compared to photo current
(D) reverse current is large as
compared to photocurrent(NET SEP 13)

Avalanche photodiodes are preferred

over PIN diodes in optical
communication systems because of
(A) Speed of operation
(B) Higher sensitivity
(C) Larger bandwidth
(D) Larger power handling Capacity
(NET SEP 13)
Tunnel diode is basically a junction
diode with
(A) High doping in P-region alone
(B) High doping in p and n regions,
both
(C) High doping in n region alone
(D) Low doping in both P and n
Regions
Assertion (A) : A step graded junction
is formed when there is an abrupt
change from acceptor ion on one
side to donor ions on the other
side.
Reason (R) : In step graded junctions,
donor and acceptor concentrations
are unequal and these junctions
behave as asymmetrical junctions
Match the following lists :
List I
List II
a. Early effect
i. IC Fabrication
b. Masking
ii. JFET
c. Enhancement iii. MOSFET
d. Pinch off
iv. Transistor
The correct match is
A b c d
(A) i ii iv iii
(B) I iii ii iv
(C) iv iii I ii
(D) iv i iii ii
The transferred-electron bulk effect
occurs in
(A) germanium
(B) gallium arsanide
(C) silicon
(D) metal semiconductor junction
Indicate which of the following diodes
does not use negative resistance in its
operation :

(A) Backward
(B) Gunn
(C) IMPATT
(D) Tunnel

Response time of PIN diode is of the

order of
(A) 0.1 ns
(B) 1 ns
(C) 10 ns
(D) 1 milli.sc
PIN diode is used as
(A) sine wave modulator
(B) triangular wave modulator
(C) square wave modulator
(D) low frequency rectifier
One of the following microwave diodes
is suitable for very low-power oscillator
only.
(A) Tunnel
(B) Avalanche
(C) Gunn
(D) IMPATT
PIN diode is used as
(A) sine wave modulator
(B) triangular wave modulator
(C) square wave modulator
(D) low frequency rectifier
One of the following microwave diodes
is suitable for very low-power oscillator
only.
(A) Tunnel
(B) Avalanche
(C) Gunn
(D) IMPATT
Semiconductor materials are made
up of
(A) Metallic bond
(B) Ionic bond
(C) Vander Waals bond
(D) Covalent bond
(NET JUNE 13)

The current in a zener diode is

controlled by
(A) zener diode resistance
(B) potential barrier
(C) impact ionization
(D) external circuits
Resistance
(NET JUNE 13)
The ripple factor of a half-wave
rectifier is found to be
(A) 1.57
(B) 1.21
(C) 1.12
(D) 1.41
The 555 timer can be employed in
1. A monostable multivibrator
2. A bistable multivibrator
3. An astable multivibrator
Codes :
(A) 1 & 2 are correct.
(B) 1 & 3 are correct.
(C) 2 & 3 are correct.
(D) 1, 2 & 3 are correct.
Consider the following statements
regarding a semiconductor :
1. Acceptor level lies close to the
valence band.
2. Donor level close to the
valence band.
3. n-type semiconductor behaves
as a conductor at zero Kelvin.
4. p-type semiconductor behaves
as a insulator at zero Kelvin.
Codes :
(A) 2 & 3 are correct.
(B) 1 & 3 are correct.
(C) 1 & 4 are correct.
(D) 3 & 4 are correct
A transducer converts
1. A potential difference is
developed across a current
carrying metal strip when the
strip is placed in transverse
magnetic field.
2. The Hall effect is very weak in
metals but large in
semiconductors.

3. The Hall effect is very weak in

semiconductors but is large in
metals.
4. It is applied in the
measurement of the magnetic
field intensity.
Codes :
(A) 1, 2 & 3 only
(B) 2 & 4 only
(C) 1, 3 & 4 only
(D) 1, 2 & 4 only
If an electric field is applied to an
n-type semiconductor bar, the
electrons and holes move in opposite
directions due to their opposite
charges. The net current is
1. due to both electrons and holes
with electrons as majority
carriers.
2. the sum of electron and hole
currents.
3. the difference between electron
and hole currents.
Which of these statements is/are
correct ?
(A) 1 & 3 (B) 1 & 2
(C) 2 & 3 (D) 3 alone
Assertion (A) : The intrinsic Fermi
level of a semiconductor lies
exactly at the middle of the
energy gap.
Reason (R) : The densities of the
available state in valence and
conduction bands of a
semiconductor are equal
Assertion (A) : Tunnel diode
represents negative resistance
characteristics and when
operated in this region may be
used as an oscillator.
Reason (R) : Tunnel diode is heavily
doped p-n junction having an
extremely narrow junction
which electrons are able to
tunnel through it.

Consider the following steps :

1. Etching
2. Exposure to UV radiation
3. Stripping
4. Developing
After a wafer has been coated with
photo-resist, the correct sequence of
these steps in photolithography is
(A) 1, 4, 2, 3 (B) 2, 4, 1, 3
(C) 2, 1, 3, 4 (D) 1, 3, 2, 4
MATCH:
a. BJT
b. FET

i. Pinch off effect

ii. Controlled
rectification
iii. Negative
Resistance
Characteristics

c. SCR

d. Tunnel
diode
Codes :
a
b
(A) i
iii
(B) I
ii
(C) iv
i
(D) I
iv

iv. Punch through

effect
c
d
ii
iv
iii
iv
ii
iii
iii
ii

List I
a. Gunn diode
b. Solar cell
c. MOSFET
d. SCR

a
(A) i
(B) I
(C) ii
(D) i

List II
i. Junction less
device
ii. Single junction
device
iii. Triple junction
device
iv. Double
junction device

Codes :
b
c
iii
ii
ii
iv
iv
iii
iii
iv

equation
ii. Electric field
c. Diffusion
current

d
iv
iii
i
ii

70. List I
a. PN Diode
b. LED
c. PIN Diode
d. Tunnel
diode
Codes :
a b
(A) I
ii
(B) ii
iii
(C) iii ii
(D) ii
iv

List II
i. Oscillator
ii. Light emitter
iii. Rectifier diode
iv. Light detector
c
iii
i
iv
iii

d
iv
iv
i
i

Which of the following devices is

suitable for very low power oscillator
circuits only ?
(A) TRAPATT diode
(B) IMPATT diode
(C) Gunn diode
(D) Tunnel diode
In an npn transistor, the expression
for avalanche multiplication factor is
given by
(A) M =
1
(1 + VCB/B VCBO)n
(B) M = (1 + VCB/B VCBO)n
(C) M = (1 VCB/B VCBO)n
(D) M =
1
[1 (VCB/B VCBO)n]
Where, VCB is collector to base
voltage and BVCBO is maximum
reverse biasing voltage which may be
applied before breakdown between
the collector and base terminals
.( NET DEC 13)
2. In a bipolar transistor, stability factor
for a fixed bias circuit is given by
(A) S =
1
1 + (B) S =
1
1
(C) S = ( 1)2 (D) S = + 1
The figure shown below, is symbol of
(A) P channel depletion MOSFET

(B) P-channel enhancement MOSFET

(C) Complementary MOSFET
(D) P-channel JFET
Zener breakdown mechanism occurs
in reverse biased PN junction
(A) when P and N regions are
lightly doped.
(B) when P and N regions are
heavily doped.
(C) are of silicon material only.
(D) when P and N regions are
equally doped.
The operation of a Photo-diode
involves
(A) Photo-conductive effect
(B) Photo-voltaic effect
(C) Photo-emissive effect
(D) Photo-multiplicative effect
cumulative multiplication of carriers
through field induced impact
ionization occurs in
(A) Avalanche diode
(B) Tunnel diode
(C) Varactor diode
(D) Gunn diode
Tri state Buffers provide
(i) reduction of current
consumption in the circuit.
(ii) isolation from input to output.
(iii) high impedance during OFF state.
(iv) low impedance during ON state.
(A) (i) and (iv) (B) (ii) and (iv)
(C) (i) and (ii) (D) (i) and (iii)
Consider the following statements
regarding a semiconductor :
1. Acceptor level lies close to the
valence band.
2. Donor level lies close to the
valence band.
3. n-type semiconductor behaves
as a conductor at zero Kelvin.
4. p-type semiconductor behaves
as an insulator at zero Kelvin.

Of these statements :
(A) 2 and 3 are correct.
(B) 1 and 3 are correct.
(C) 1 and 4 are correct.
(D) 3 and 4 are correct
Consider the following four common
type of transistors :
1. Point Contact Transistor
2. Bipolar Junction Transistor
3. MOS Field Effect Transistor
4. Junction Field Effect Transistor
Correct arrangement of these
transistors in the increasing order of
input impedance is
(A) 1, 2, 4, 3 (B) 1, 2, 3, 4
(C) 2, 1, 3, 4 (D) 2, 1, 4, 3
Assertion (A) : The intrinsic Fermi
level of a semiconductor does
not lie exactly at the middle of
the energy band gap.
Reason (R) : The densities of the
available states in valence and
conduction bands of an
intrinsic semiconductor are
equal.
The point above the drain voltage,
where there is no increase in drain
current in a JFET is called as
(A) Break down point
(B) Pinch off point
(C) Knee point
(D) Critical point
FET is disadvantageous in
comparison with BJT because of
(A) High input impedance
(B) Low noise
(C) High gain bandwidth behaviour
(D) Current controlled behavior

For an n-channel silicon FET with

= 3 104 cms and ND = 1015
electron/cm3, find the pinch is of
voltage.


= 120
1
40
= 9 109 Newton m2
Coulomb
(A) 6.00 V (B) 5.4 V
(C) 6.8 V (D) 4.5 V
An FET is a better chopper than BJT
because it has
(A) higher series on resistance
(B) lower input current
(C) higher input impedance
(D) lower off-set voltage
For an n-channel enhancement mode
MOSFET the drain current
(A) decreases with increase in drain
current.
(B) decreases with decreases in
drain voltage.
(C) increases with increase in
drain voltage.
(D) increases with decrease in gate
voltage.
In a p type silicon sample, the hole
concentration is 2.25 1015/cm3.
If the intrinsic carrier concentration
is 1.5 1010/cm3, the electron
concentration is given by
(A) zero
(B) 1010/cm3
(C) 105/cm3
(D) 1.5 1025/cm3 (NET DEC 13)
Hall effect can be used to measure
1. conductivity of the charge carrier.
2. mobility of the charge carrier.
3. the number of valence electrons
per atom.

4. band gap of the material.

Which of the following is correct ?
(A) 1 and 2 are true (B) 2 and 3 are true
(C) 3 and 4 are true (D) 1 and 4 are true
(NET DEC 13)
In a JFET, the amplification factor ,
transconductance gm, and the
dynamic drain resistance (rd) are
related as
(A) =
gm
rd
(B) =
rd
gm
(C) = rd gm (D) = gm rd
(NET DEC 13)
21. Consider the following materials
used for fabrication of Photonic Ics.
1. Ga P 2. In As
3. Ga As 4. Si
The correct sequence of the
ascending order in terms of band gap
energies is
(A) 1, 4, 2 and 3 (B) 4, 1, 2 and 3
(C) 2, 3, 1 and 4 (D) 2, 4, 3 and 1(NET DEC 13)
IC LM 380 is a
(A) Voltage regulator
(B) Rectifier
(C) Power audio amplifier
(D) Schmitt trigger
(NET JUNE 14)
The most important application of
tunnel diode is
(A) as rectifier
(B) as switching device in digital
circuits
(C) as voltage controlled device
(D) as oscillator
(NET JUNE 14)
The threshold voltage of an n-channel
MOSFET can be increased by
(A) increasing the channel doping
concentration
(B) reducing the channel doping
concentration
(C) reducing the gate oxide
thickness

(D) reducing the channel lengthIn an FET,

(NET JUNE 14)
following characteristics
are given :
1. JFET is called as variable
current resistor.
2. JFET is called Voltage variable
resistor.
3. gd = gd0
____
___
1
__
__
VGS
VP
, where,
gd0 is value of drain to source
conductance for zero bias.
4. gd = gd0
___
__
1+
__
__
VGS
VP
2
Which one of the following is true ?
(A) 1 and 4 (B) 3 and 4
(C) 1 and 3 (D) 2 and 3
Consider the following statements :
If an electric field is applied to an ntype
semiconductor bar, the electrons
and holes more in opposite directions
due to their opposite charges. The net
current is
1. due to both electrons and holes
with electrons as majority
carriers.
2. the sum of electron and hole
currents.
3. the difference between electron
and hole current.
Which of these statements is/are
correct ?
(A) 1 alone (B) 1 and 2
(C) 2 and 3 (D) 3 alone

Consider the following rectifier

circuits :
1. Half-wave rectifier without
filter
2. Full-wave rectifier without
filter
3. Full-wave rectifier with series
inductance filter
4. Full-wave rectifier with
capacitance filter
The sequence of these rectifier
circuits in decreasing order of the
ripple factor is
(A) 1, 2, 3, 4
(B) 3, 4, 1, 2
(C) 1, 4, 3, 2
(D) 3, 2, 1, 4
The earth has a conductivity of
102 mho/m, r = 10, r = 2, f = 10
GHz, the earth behaves like a
(A) Good conductor
(B) Moderate conductor
(C) Good dielectric
(D) Bad dielectricThe carrier velocity in a
silicon p-i-n
photodiode with 25 m depletion
layer width is 3 104 m/s. The
maximum response time for the pin
diode is given by :
(A) 52 ns (B) 2.5 ns
(C) 62 ns (D) 5.2 ns
For a JFET, above the pinch-off
voltage, as the drain voltage
increases, the
(A) the drain current remains
constant.
(B) the drain current decreases.
(C) the drain current increases
linearly.
(D) the drain current varies
parabolically.
Microprocessor development had
happened because of LSI. What is
LSI ?
(A) Large Scale Integral
(B) Large Signal Integration
(C) Large Scale Integration

(D) Long Signal Integration

The threshold voltage of a MOSFET
can be lowered by
1. using a thinner gate oxide
2. reducing the carrier
concentration in the substrate
3. increasing the carrier
concentration in the substrate
Of these statements :
(A) 3 alone is correct.
(B) 1 and 2 are correct
(C) 1 and 3 are correct
(D) 2 alone is correct
Semi conductors have
(A) Positive temperature coefficient
of resistance
(B) Zero temperature coefficient of
resistance
(C) Negative temperature coefficient
of resistance
(D) Resistance does not change
with temperature
What is the correct sequence of the
following step in the fabrication of a
monolithic, bipolar junction transistor ?
1. Emitter diffusion
2. Base diffusion
3. Buried layer formation
4. Epi-layer formation
Select the correct sequence using the
codes given below :
(A) 3, 4, 1, 2 (B) 4, 3, 1, 2
(C) 3, 4, 2, 1 (D) 4, 3, 2, 1
a. Shot Noise
b. JohnsonNoise
c. CurrentNoise
d. PartitionNoise

i. Resistance
ii. Diode
iii. P-N junction
iv. Triode

(Structure/
Characteristics
a. n-channel channel
JFET is better
than p-channel
JFET

(Reasons)
i. Reverse bias

increases along

the
b. Channel is
wedge shaped
ii. High electric
field near the
drain and
directed
towards source
c. Channel is not
completely
closed at
pinch-off
iii. Low leakage
current at the
gate terminal
d. Input
impedance is
high
iv. Better
frequency
performance
since n >> p
Codes :
abcd
(A) iv i ii iii
(B) iv ii iii i
(C) iii i ii iv
(D) ii iv iii
32. List I
(Devices)
List II
(Characteristics)
a. BJT i. Voltage
controlled
negative
resistance
b. MOSFET ii. High current
gain
c. Tunnel
diode
iii. Voltage
regulation
d. Zener diode iv. High input
impedance
Codes :
abcd
(A) ii iv i iii
(B) i iv ii iii
(C) ii iii i iv
(D) i iii ii iv

Assertion (A) : Considering two

p-n-p and n-p-n transistors of
identical construction as far as
shape, size and doping are
concerned, the n-p-n transistor
will have a better frequency
response.
Reason (R) : The electron
mobility is higher than that of
the hole mobility.
Assertion (A) : If a semiconductor
is placed in a transverse
magnetic field B and an electric
field E is applied across its
other two faces, then it would
produce an electric current I
in the direction perpendicular
to both B and E.
Reason (R) : Hall coefficient is
proportional to the mobility of
the charge carriers in the semi
conductor.