Microwave Transistor

Bias Considerations
Application Note 944-1
Introduction
Often the least considered factor in microwave transistor
circuit design is the bias network. Considerable effort is
spent in measuring s-parameters, calculating gain, and
optimizing bandwidth and noise figure, while the same
resistor topology is used to bias the transistor. Since the
cost per dB of microwave gain or noise figure is so high, the
circuit designer cannot afford to sacrifice RF performance
by inattention to DC bias considerations.

Microwave transistor amplifier design requires biasing

the transistor into the active region of performance and
holding this bias or quiescent point constant over variations in temperature. At low frequencies, emitter resistor
stabilization with negative current feedback is used for DC
stability. At microwave frequencies, the by-pass capacitor
becomes a problem since a good RF bypass at the design
frequency often introduces low frequency instability and
gives rise to bias oscillations. Figure 1 shows this effect.
In low noise amplifier applications, even if a capacitor
could be chosen to provide effective RF and low frequency
emitter bypass, any small series emitter impedance at the
operating frequency would reflect in a large noise figure
degradation. Most microwave circuit designs for best gain
or lowest noise figure require that the emitter lead be DC
grounded as close to the package as possible so that the
emitter series feedback is kept at an absolute minimum.

S 11
S 11 (AT 4 GHz) = 0.52 154
S 11 (AT 0.1 GHz) = 0.901 14.9
S-PARAMETERS OF GROUNDED EMITTER
TRANSISTOR AT 4 GHz AND 0.1 GHz

BYPASS
CAPACITOR
100 pF

EMITTER
BIAS
RESISTOR

S' 11 (AT 4 GHz) = 0.52 154 UNCHANGED

AT 4 GHz
S' 11 (AT 0.1 GHz) = 1.066 -8.5 |S 11|>1
AT 0.1GHz
S-PARAMETERS OF SAME TRANSISTOR WITH
GOOD 4 GHz EMITTER BYPASS CAPACITOR.
S' 11 AT 4 GHz REMAINS UNCHANGED WHILE
|S 11 | AT 0.1 GHz IS GREATER THAN 1
INDICATING CONDITIONAL STABILITY.

Figure 1.

6114-01 AN 944-1

It has been found that the principal dependent variable

in DC stability analysis is the collector current (IC). The
transistor parameters that are temperature sensitive and
influence IC are examined along with some passive resistive circuits that give stable DC operation and allow for
trimming due to variations in transistor types.
Analysis
In order to best select an optimum bias network, a method
of comparison has to be developed. Analysis of transistor
bias network instability involves writing a collector current
equation in terms of the transistor equivalent circuit and
the external bias circuitry. Partial derivatives of the collector current, with respect to the temperature dependent
variables, are calculated individually and the resultant
stability factors can then be considered simultaneously
to predict collector current temperature behavior.

RC

RB1

RB
RB2

IB

IBB

IC + IBB + IB

IC

COLLECTOR CURRENT IC (mA)

IBB + IB

100

VCC

VBE

VCE
E

10

1.0
100C

25C

-50C

0.1

A. BIAS CIRCUIT SHOWING ONLY THE DC COMPONENTS

0.01

IBB + IB

RB1
RB

IC

IB

0.2
0.4
0.6
0.8
1.0
1.2
BASE-EMITTER VOLTAGE VBE (VOLTS)

A. TYPICAL BASE-EMITTER VOLTAGE (VBE) vs.

COLLECTOR CURRENT (IC) CURVE SHOWING
THE THRESHOLD SHIFT DUE TO SENSITIVITY
OF V'BE = -2 mV/C.

C
RC

hie
IBB

VCC

VBE
V'BE

hFE IB

ICBO
(1 + hFE)

VCE

RB2

VCC

RC

RB

IC

IB
VCE

VBE

B. THE EQUIVALENT CIRCUIT OF FIGURE 2A IS USED IN

DC STABILITY ANALYSIS.
NOTES:
V'BE IS INTERNAL TO THE TRANSISTOR AND HAS A -2 mV/C TEMPERATURE
COEFFICIENT.

B. BIAS NETWORK THAT USES NO FEEDBACK

AND IS SENSITIVE TO CHANGES IN V'BE,
ICBO, AND hFE.

hie IS THE HYBRID INPUT IMPEDANCE AND FOR AVAGO TECHNOLOGIES

MICROWAVE TRANSISTORS IS APPROXIMATELY 500 OHMS. THE EXACT VALUE
IS UNIMPORTANT SINCE hie IS ALWAYS IN SERIES WITH THE LARGER BASE BIAS
RESISTOR RB. IT IS ONLY INCLUDED FOR COMPLETENESS.

Figure 2.

RC

VCC

IC

RB
IB

VCE

A look at the typical bias circuit

of
Temperature
6114-02
AN
944-1Sensitive DC Parameters
Figure 2a and its DC equivalent
Base-Emitter Voltage (VBE)
circuit in Figure 2b identifies the
V'BE is the base-emitter voltage. VBE
internal parameters that affect
is internal to the transistor and has a
collector current. Since the exnegative temperature coefficient of
ternal resistors have negligible tem-2 mV/C. Figure 3a shows a typical
perature change compared to the
silicon PN junction current-voltage
transistor, the temperature sensitive
relation. Notice the negative shift
parameters are found to be V'BE,
in threshold voltage for increased
ICBO, and hFE.
temperatures. A bias circuit that
fixes a constant voltage on the base,
independent of temperature, finds
the collector current increasing for

VBE

C. BIAS NETWORK THAT USES VOLTAGE

FEEDBACK AND IS LESS SENSITIVE TO
CHANGES IN V'BE, ICBO, AND hFE.

Figure 3.

6114-03 AN 944-1

increasing temperature. Fortunately,

negative voltage feedback will help
compensate for V'BE changes as illustrated in Figures 3b and 3c.

IC
IB VCE = constant
hFE, the DC value of the current gain,
is defined as the ratio of the collector current (IC) to base current (IB).
hfe = =

Microwave transistors have a more

complicated reverse current flow.
A small component of this current
flow is a conventional ICBO term, but
the major contributor is a surface
current that flows across the top of
the silicon crystal lattice. This surface
current is a more linear function of
temperature than the ICBO current.
The total reverse current, made up
of ICBO and surface components,
increases at a rate much less than
that which would be expected from
an ICBO current alone of the same
magnitude. A typical reverse current
versus temperature relationship is
shown for several Avago Technologies microwave transistors in Figure
4. The data applies to a collectorbase voltage of 10 volts.

In general, the slope of the ICBO

curve for Avago Technologies
microwave transistors remains
unchanged with reverse bias. For
stability calculations, a family of
curves, at specified collector to
base voltages, can be considered to
follow the slope of the curve with
intercepts at 25C corresponding to
the data sheet or measured value of
ICBO.
DC Current Gain (hFE)
The typical characteristic curve of
Figure 5 shows the collector current
versus collector to emitter voltage
for a constant base current.
The hfe is defined as the ratio of the
change of collector current to the
change in base current.

hfe = =

IC
IB VCE = constant

hFE = DC =

5. C

COLLECTOR CURRENT IC (mA)

ICBO REVERSE CURRENT (nA)

AVAGO 35850 SERIES

100
CLASSICAL
ICBO SLOPE

IC

IB = 0.24 mA
IC
IB VCE = constant

IB

IB = 0.16 mA
8

SV'BE =

-35

5
25
45
-15
TEMPERATURE (C)

65

85

TYPICAL REVERSE CURRENT vs. TEMPERATURE

FOR AVAGO TECHNOLOGIES MICROWAVE
TRANSISTORS. FOR A MICROWAVE TRANSISTOR
ICBO = IS (SURFACE CURRENT) + Ij (JUNCTION
CURRENT)

Figure 5.

ShFE =
IC =

I
V'BE ICBO, hFE = constant

IC
constant
h
BE =944-1
FE ICBO, V'
6114-05
AN
IC

ICBO

I
I
ICBO + C V'BE + C hFE
hFE
V'BE

Figure 4.

6114-04 AN 944-1

IC = SICBO ICBO + SV'BE V'BE + ShFE hFE

VC VBE

(Volts)

ICBO

IC
I
V'BE + C hFE
hFE
V'BE

SLOPE = +0.5%/C

ICBO +

7. C
V

Equations-1 944-1

IC = SICBO ICBO + SV'BE V'BE + ShFE hFE

10 0.7

-35

Figure 6.

A TYPICAL COMMON EMITTER CHARACTERISTIC

CURVE SHOWING THE RELATIONSHIPS BETWEEN
C
BASE CURRENT AND COLLECTOR CURRENT.

1.0
-55

IC

VBB VBE (Volts) 2 0.7

=
= 6.5 K
(K)
=5 25 45 = 65 85
RB-15
TEMPERATURE (C)
(mA)
0.2
IB
TYPICAL PERCENT CHANGE IN hFE VERSUS
(use RB = 6.81 K
TEMPERATURE (NORMALIZED TO 25C).

0
IC
0 =
10
20
SICBO
COLLECTOR-EMITTER
VCE (VOLTS)
ICBO hFE, V'VOLTAGE
BE = constant

AVAGO 35820 &

35860 SERIES

10

IC =

-40
-55

h12FE = DC =

IC
hFE ICBO, V'BE = constant

ShFE =

20

6. N
I

-20

16

1000

RB (

IC
IB VCE = constant

It is this DC value of hFE that is used

in the stability calculations; it is
found to typically increase linearly
with temperature
at the rate of
I
S = C
0.5%/ICBO
C. Figure
the tem, V'BE = constant
ICBO h6FEshows
perature dependence of hFE.
I
SV'BE = C
V'BE ICBO, hFE = constant
40

hFE (PERCENT CHANGE)

Reverse Collector Current (ICBO)

ICBO is the current flowing through
a reverse biased PN junction.
Classically, this leakage current is
expected to double for every 10C
temperature rise in a silicon semiconductor junction.

V VBE R(Volts)
mA K
= B2 assuming
= 10 IBB0.7==1 46.5
RB (K) = 5. CCalculate
(mA)
IB
0.2 2
VBB (Volts)
=
= = 2 K
RB2 (K) =
(use RB =1 46.4 K)
IBB (mA)
(use RB2 = 1.96 K

6114-06
AN
944-1
6. Now
calculate
RB1 knowing IB,

IBB, VBB and VCC

V V
(Volts) 10 2
=
= 6.66
RB1 (K) = CE BB =
(mA)
1.2
IBB + IB
4. Calculate RC
(use RB1 = 6.19

V Calculate
VC R(Volts)
BB +=IB,0.98 K
RC (K) = 7. CC
= C knowing
= 20IC, I10
IVC + and
IB V (mA)
10 + 0.2
CC
CE
= 1 K) 20 10
VCC VCE(use RC(Volts)
=0
=
=
RC (K) =
(mA)
10 + 1.2
IC + IBB + IB

(use RC = 90

NOISE FIGURE

0
|S21|2

-5

-10

NOISE FIGURE CHANGE (db)

10

PERCENT CHANGE |S21|2

RF Sensitivity of Avago Technologies

Microwave Transistors
A look at the four s-parameters and
noise figure of Avago Technologies
microwave transistors reveals that
| S21 |2 and noise figure stand out
as the most sensitive parameters to
small changes in bias. Also, both of
these parameters are stronger functions of collector current (IC) than
of collector to emitter voltage (VCE).
This means that if we know something about how | S21 |2 and noise
figure change with collector current
and with temperature, then some
constraints can be placed on the
bias network to minimize changes
in RF performance over a specified
temperature range.

-1

-40

-20
0
20
60
40
PERCENT CHANGE FROM A
QUIESCENT COLLECTOR CURRENT

A. TYPICAL CHANGE IN PERFORMANCE AS A

FUNCTION OF COLLECTOR CURRENT VARIATION
FOR A TRANSISTOR BIASED AT MINIMUM NOISE
FIGURE AND A TRANSISTOR BIASED AT
MAXIMUM GAIN.

Next, a look at some typical changes

in noise figure and gain as a function of temperature (Figure 7b)
shows that both NF and gain degrade with increasing temperature.
We see, for example, that a bias
network that can hold the quiescent
point, such that the current does not
increase more than 20% to 60C, has
a 5% degradation in gain or a 0.3 dB
increase in noise figure at 60C due
to transistor changes alone. Some
temperature compensation could
be designed into the bias circuitry
by using lower values of collector

5
NOISE FIGURE
0

-5

-10
-55

-1

|S21|2
-35

-15
5
25
45
TEMPERATURE (C)

NOISE FIGURE CHANGE (db)

PERCENT CHANGE |S21|2

10

The typical data shown in Figure

7a is normalized to percentage
changes in both gain and collector
current. The noise figure change is
plotted in dB. Although the absolute
gain and noise figure are frequency
dependent, their sensitivity with
respect to collector current (IC) can
be considered frequency independent. Notice that a 20% increase in
collector current has a very small effect on either a transistor biased for
minimum noise figure or a transistor
biased for maximum gain.

65

85

B. TYPICAL CHANGE IN PERFORMANCE AS A

FUNCTION OF TEMPERATURE VARIATION
FOR A TRANSISTOR BIASED AT MINIMUM NOISE
FIGURE AND A TRANSISTOR BIASED AT
MAXIMUM GAIN (NORMALIZED TO 25C).

Figure 7.

current at 25C and allowing the

temperature sensitivity of the bias
network to offset the temperature
sensitivity of the transistor.

944-1
It should 6114-07
be pointed AN
out that
each
amplifier function has a different
bias requirement. In other words,
transistors used in gain stages in
which the noise figure or the saturated output power are not critical
have a much more relaxed bias sta-

bility requirement than a low noise

front-end transistor. This can be
seen in Figure 7a, since | S21 |2 has a
broad maximum compared to noise
figure. A transistor biased for high
linear output power must hold its
quiescent point such that the 1 dB
compression point is not degraded
with temperature, and so that the
maximum power dissipation in the
device is not exceeded with increasing temperature.
Suggested Bias Circuits
Three bias circuit topologies are
shown in Table 1 along with a
general expression for the collector current and the calculated DC
bias stability factors for V'EB, ICBO,
and hFE. Most microwave circuit
designs, for reasons of noise figure,
gain, and RF stability, require a DC
grounded emitter, Therefore, emitter resistor stabilized circuits are not
considered. The grounded emitter
non-stabilized bias circuit (Table 1a)
receives very little usage in microwave circuit design since it exhibits
the least DC bias stability.
Both circuits in Tables 1b and 1c find
widespread usage as bias networks.
The voltage feedback circuit uses
fewer components and is almost
as temperature stable as Table 1c.
The addition of RB1 and RB2 to the
voltage feedback circuit does two
things. First, it makes all the element
values lower in resistance and this
makes it more compatible with thin/
thick film resistor values. In the voltage feedback circuit, the value of RB
would typically be in the range of
30 k to 100 k. These values are
difficult to achieve in hybrid integrated circuits. Second, the circuit
of Table 1c can be considered to
have a constant base current source,

Differences in collector current

stability for each topology are compared in Figure 8. It is important
to point out that, for the sake of
comparison, each circuit was used
to bias the transistor to a common
quiescent point. This data is typical
for frequently encountered microwave bias circuits and is valuable in
relative comparisons. Notice that
for each of the circuits, the collector
current is a positive linear function
of temperature. And from Figure 7a,
we see that noise figure degradation
and gain are negative functions of
both collector current and junction
temperature.

60
PERCENT CHANGE FROM A QUIESCENT
COLLECTOR CURRENT

through RB. This allows for trimming,

on a production basis, to initially set
the collector current to the desired
value. The collector current cannot be measured directly since the
current in RC is made up of base current, base bias network current, and
collector current. However, since IC is
proportional to VCE, monitoring VCE
while adjusting RB accommodates
any value of hFE encountered in
Avago Technologies transistors.

3. Cutler, Philip. Electronic Circuit

Analysis Volume 2. McGraw-Hill,
1967, Chapters 4-11, pp. 220-228.
4. G.E. Transistor Manual Sixth Edition. 1962, Chapter 7, pp. 101-109.
5. Joyce, Maurice V. and Clark, Kenneth K. Transistor Circuit Analysis.
Addison-Wesley, 1961, pp. 66-81.

5

VCC

VBB

B. VOLTAGE FEEDBACK

RB

20

RC

-20

C. VOLTAGE FEEDBACK &

CONSTANT BASE
CURRENT SOURCE

-40

-60
-55

-35

-15
5
25
45
TEMPERATURE (C)

65

NON-STABILIZED

85

RB

TYPICAL DC STABILITY PERFORMANCE

OF EACH BIAS NETWORK (TABLE 1)
USED TO BIAS AVAGO TECHNOLOGIES
MICROWAVE TRANSISTORS. GRAPH
SHOWS THE PERCENT CHANGE FROM
A NOMINAL QUIESCENT COLLECTOR
CURRENT AS A FUNCTION OF
TEMPERATURE (NORMALIZED TO 25C)

RC

VCC

VOLTAGE FEEDBACK

RB1

RC

RB
RB2

Bibliography
1. Chirlian, P.M. Analysis and Design
of Electronic Circuits. McGraw-Hill,
Chapters 2, 4, pp. 58-61.
2. Corning, John J. Transistor Circuit
Analysis and Design. Prentice-Hall,
1965, pp. 91-115.

A. NON-STABILIZED

40

VOLTAGE FEEDBACK AND CONSTANT

BASE CURRENT SOURCE

Figure 8.

6114-08 AN 944-1

VCC

Table 1. Microwave Transistor Stability Factors

Bias networks for DC grounded
emitter operation. For each circuit
the general expression for the
collector current along with the
stability factors are given.
The voltage feedback circuit of
1B and the voltage feedback and
constant base current circuit of 1C
provides for temperature stable DC
operation and complements the RF
performance of the following Avago

Technologies transistor series:

Avago Technologies 35820, Avago
Technologies 35850, and Avago
Technologies 35860.
The non-stabilized circuit of 1A
is not recommended and is only
shown for comparison.

Table 1A.
VCC

VBB
RB

RC

A. Non-Stabilized
Collector current at any temperature (IC)
ICBO stability factor
I
ICBO = C
ICBO hFE, V'BE = constant
V'BE stability factor
I
V'BE = C
V'BE hFE, ICBO = constant
hFE stability factor
I
hFE = C
hFE hFE, V'BE = constant

Table 1A

hFE (VBB V'BE)

(hie + RB)

+ ICBO (1 + hFE)

1 + hFE

-hFE
hie +RB

VBB V'BE
hie +RB

+ ICBO

Table 1B.

RC

RB

VCC

B. Voltage Feedback
Collector current at any temperature (IC)

hFE (VCC V'BE) + ICBO (1 + hFE)(hie +RB+RC)

hie +RB+RC(1 + hFE)

ICBO stability factor

I
ICBO = C
ICBO hFE, V'BE = constant

(1 + hFE) (hie +RB+RC)

hie +RB+RC (1 + hFE)

V'BE stability factor

I
V'BE = C
V'BE hFE, ICBO = constant

- hFE
hie +RB+RC (1 + hFE)

hFE stability factor

I
hFE = C
hFE hFE, V'BE = constant

I
hfe = = C
=+constant
(hFE RC+RB +hie + RI
V'BE
KICBO)
B CCVCE
C)(V

D2
(hFE [VCC V'BE+ KICBO] + KICBO)
-RC
2 I
hFE = DCD= C
IB VCE = constant
where: K = hie +RB + RC
and D = hFE RC + RB +hie + RC

Use of Stability Factors

First calculate the stability
Table 1Bfactors for V'BE, ICBO,
and hFE. Then, to find the change in collector
current at any temperature, multiply the change
from 25C for each temperature dependent variable with its corresponding stability factor and
sum.
It would appear to be an easy task to further analyze the individual stability factors for minimums
in terms of the external circuit resistor values.
This is not easily done since all the factors are
inter-related. The stability factors must be considered simultaneously since an optimum set of
resistor values to minimize one parameter could
grossly increase another.
7

Equation

SICBO =

IC
ICBO hFE, V'BE = constant

SV'BE =

IC
V'BE

ICBO, hFE = constant

ShFE =

IC
hFE

ICBO, V'BE = constant

IC =

IC

ICBO

I
I
ICBO + C V'BE + C hFE
hFE
V'BE

IC = SICBO ICBO + SV'BE V'BE + ShFE hFE

RB (K) =

VBB
I

5. Calculate RB2 a
V
RB2 (K) =

6. Now calculate
IBB, VBB and VC
V
RB1 (K) = C

7. Calculate RC k
VCC and VCE
V
RC (K) =
IC

Table 1C.
RB1

RC

VCC

RB
RB2

C. Voltage Feedback and Constant Base Current Source

-V'BE A - RB2[(RC ICBO (1 + hFE) - VCC)]

Collector current at any

temperature (IC)

hFE

ICBO stability factor

IC
ICBO =
ICBO hFE, V'BE = constant

(1 + hFE)

V'BE stability factor

IC
V'BE =
V'BE hFE, ICBO = constant

(RB + hie) A + RB2 (hFE RC + RC + RB1)

RB2 HFE RC (1 + hFE)

A (RB + hie) + RB2 (hFE RC + RC + RB1)

-hFE A
(RB + hie) A + RB2 (hFE RC + RC + RB1)

hFE stability factor

IC
hFE =
hFE hFE, V'BE = constant

hFE

RB2 RC [(RB2 VCC - B) - RB2 RC ICBO (1 +hFE)]

D2
B RB2 [RC ICBO (1 +hFE) + VCC +hFE RC ICBO]
D

where: A = RB1 + RB2 + RC

B = -V'BE (RB1 + RB2 + RC)
C = (RB + hie) (RB1 + RB2 + RC)
D = C + RB2 (hFE RC + RC + RB1)

Table 1C

+ ICBO (1 + hFE)

+
+ ICBO

Equations-1 944-1

IC
IB VCE = constant

hfe = =

Design Examples
Examples of how to calculate the
resistor values
Ifor
C the two most
hfe = =used
commonly
emitVCE = constant
IB ICgrounded
hFE = DC =
IB given
VCE = constant
ter bias circuits are
below.
The nearest standard 1% tolerance
resistor values are also shown. Depending upon the exact application,
other tolerance resistors
can be used
I
h = DC = C
with FE
little or no difference.
Also listIB VCE = constant
ICform, are other resistor
ed,Sin tabular
ICBO =
hFE, V'
ICBO been
BE = constant
values
that have
calculated
IC
V'BE

SV'BE =

for the indicated quiescent pointsVBB VBE = (Volts) = 2 0.7 = 6.5 K

RB (K) =
(mA)
Equations-1
0.2
at a 20 volt supply voltage.
Other
IB 944-1
(use RB = 6.81 K)
supply voltages can be calculated
accordingly.
IBB = 1 mA
Calculate
For bias circuit designs5.with
Avago
VRB2 assuming
(Volts)
V
= 2 0.7 = 6.5 K
RB (K)
= BB VBBBE =
(Volts)
2
Technologies microwave
transistors,
K
RB2 (K) = IB = (mA)= = 20.2
(mA) 1
IBB
assume hFE = 50 and neglect hie.
(use RB = 6.81 K)
(use RB2 = 1.96 K)
6.
calculate
RB1 knowing
IBB =IB1, mA
5. Now
Calculate
RB2 assuming
IBB, VBB and VCCVBB (Volts) 2
= = 2 K
RB2 (K) =V V=
IC + IBB + IB
(Volts)
1 = 10 2 = 6.66
=
K
RB1 (K) = CEIBB BB (mA)
(mA) (use R1.2
IBB + IB
B2 = 1.96 K)
(use RB1 = 6.19 K)

ICBO, hFE = constant

EXAMPLE 1

ICIC
SShICBO
RC
FE == hI
ICBO
hFE, V'BE = constant
FE
CBO

VCC

IC + IBI
I
I
ISCV'= =C IC ICBO + C V'BE + C hFE
IC
BIAS
BEICBOV'
hFE
ICBO
, hV'FEBE= constant
R BE
B

IB

CHOKE

IC
Sh =
ICBO+, SV'
V'BEBE= constant
hFE
= SICBO
ICBO
V'BEV + ShFE hFE
ICFE
CE

I
I
ICBO + VBEC V'BE + C hFE
IC =
hFE
V'BE
ICBO
IC

6. Now calculate RB1 knowing IB,

7. Calculate
RCVknowing
IC, IBB + IB,
IBB, VBB and
CC
VCC and VCE V V
(Volts)
BB
10 2 = 6.66 K
RB1 (K) = VCE
VCE = (mA)
(Volts)= 20
CC +
I
I
=
= 1.2 10 = 0.893 K
RC (K) =
BB B
(mA)
10 + 1.2
IC + IBB + IB
(use RB1 = 6.19 K)
(use RC = 909 )
7. Calculate RC knowing IC, IBB + IB,
VCC and VCE
VCC VCE
(Volts) 20 10
= 0.893 K
=
=
RC (K) =
(mA)
10 + 1.2
IC + IBB + IB

h20
1. Determine
ICBOvoltage
+ SV'BE available
V'BE + S(V
IC = SICBOsupply
CC =
FEV) and transistor operating
hFE
bias point (10 V, 10 mA). Assume ICBO = 0, VBE = 0.7 volts.
V V
(Volts)
= 10 0.7 = 46.5 K
RB (K) = C BE =
(mA)1 AN 0.2
I
B
6114-Examp.
2. Knowing the measured value of hFE,944-1
(or assume 50), calculate base
= 46.4
(use=RB0.2
current IB (mA) = IC (mA) / hFE = 10/50
mA. K)

3. Calculate RB knowing VBE = 0.7 V and VCE = 10 V.

RB (K) =

VC VBE
(Volts)
=
= 10 0.7 = 46.5 K
(mA)
IB
0.2
(use RB = 46.4 K)

4. Calculate RC
4. Calculate RC.
RC (K) =

VCC VC
(Volts)
=
= 20 10 = 0.98 K
(mA)
IC + IB
10 + 0.2
(use RC = 1 K)

4. Calculate R
Note that a 20%Cerror in assuming a value of hFE will only change
IC 1 mA.
V V
RC (K) = CC C = (Volts) = 20 10 = 0.98 K
(mA)
IC + IB
10 + 0.2
(use RC = 1 K)
(continues)

(use RC = 909 )

Example 1. (continued)
5. The general equation for collector current can now be used to check the
design using actual calculated resistor values.
6. After the transistor circuit is constructed, a quick measurement of VCE will
ensure that the device is biased correctly. Since VCE is proportional to 1/
hFE, the base resistor (RB) can be adjusted accordingly to compensate for
manufacturing variations in hFE. This is easily done by varying RB while
monitoring VCE to properly obtain the desired collector current.
Table of Typical Resistor Values for Indicated Bias (VCC = 20 V)
Bias

hFE

RB

RC

10 V, 5 mA
10 V, 10 mA
15 V, 15 mA

50
50
50

90.9K
46.4K
46.4K

1.96K
1K
348

EXAMPLE 2
RB1

RC

IBB + IB

IC + IBB + IB

BIAS
CHOKE

VBB

VCC

IC

RB
IB
RB2

IBB

VCE
VBE

1. Determine supply voltage available (VCC = 20 V) and transistor bias

6114-Examp.
2 AN
operating point
(10 V, 10 mA). Assume
ICBO 944-1
= 0, VBE = 0.7 V.
2. Select VBB to be 2 V to ensure constant base current source.
3. Knowing the measured value of hFE, (or assume 50), calculate base
Equations-1 944-1
current IB (mA) - IC (mA) / hFE = 10 / 50 = 0.2 mA.
4. Calculate RB knowing VBE = 0.7 V and VBB = 2 V.
RB (K) =

VBB VBE (Volts)

=
= 2 0.7 = 6.5 K
(mA)
0.2
IB
(use RB = 6.81 K)

(continues)
10

5. Calculate RB2 assuming IBB = 1 mA

V
(Volts) 2
= = 2 K
RB2 (K) = BB =
(mA) 1
IBB
(use RB2 = 1.96 K)

hFE
FE
hhFE

FE

hFE
FE

46.5 K
46.5K
K
46.5
46.4 K)
46.4K)
K)
46.4

Equations-1944-1
944-1
Equations-1

V V
(Volts)
2 0.7 = 6.5 K
RB (K) = VBB VBE = (Volts) =
(mA)
0.7
0.7 = 6.5 K
BB
BE
I

V
V
(Volts)
= 220.2
(K)== BB B BE ==
= 6.5 K
RRBB(K)
(mA) = (use
0.2
II B
(mA)
0.2RB = 6.81 K)
B
(useRRB==6.81
6.81K)
K)
(use
B
Example 2. (continued)
5. Calculate RB2 assuming IBB = 1 mA
assuming
Calculate
CalculateRRB2
RB2B2assuming
IBB
=121mA
mA.
(Volts)
Vassuming
BB
IIBB
==
5.5.5.Calculate
= 2 K
=1 mA
RB2 (K) = VBB = (Volts)
2
BB (Volts)
K
= (mA) ==21 ==22K
(K)== VIBB
B2(K)
RRB2
(mA) 11 (use RB2 = 1.96 K)
IBB = (mA)
IBB
(useRRB2==1.96
1.96K)
K)
(use
B2
6. Now calculate RB1 knowing IB,
knowingIIB,,
calculate
and VCCRRB1
INow
B1knowing
6.6.Now
calculate
BB, VBB
6.IBB
Now
calculate
RB1 knowingBIB, IBB, VBB and VCC.
,
V
and
V
BB
CC
V
(Volts)
IBB, VBB and VVCC
RB1 (K) = VCE VBB = (Volts) = 10 2 = 6.66 K
(mA) = 10
CE
BB
101.2
(Volts)
V

V
I
+
I
22 ==6.66
6.66K
K
B ==
(K)== CEBB BB
B1(K)
RRB1
(mA) = (use1.2
1.2
IIBB
IB
(mA)
BB++IB
RB1 = 6.19 K)
(useRRB1
6.19K)
K)
B1==6.19
(use
7. Calculate RC knowing IC, IBB + IB,
knowingICIC, ,IIBB
+I
VCalculate
7.7.
Calculate
RRRCCCknowing
CC and VCE
7. Calculate
knowing IC, BB
IBB+ +IB,B,IB, VCC and VCE.
V
and
V
CCand VCE
CE VCC VCE
VCC
(Volts) 20 10
= 0.893 K
=
RC (K) = VCC VCE = (Volts)
20+10
10 = 0.893 K

V
V
(Volts)
10
1.2
I
+
I
+
I
CC BB CE B = (mA) = 20
C
R
(K)
=
RCC(K) = I + I + I = (mA)
(mA) = 10
10++1.2
1.2 = 0.893 K
BB+ IBB
ICC+ IBB
(use RC = 909 )
909)
)
(useRRCC==909
(use

8. The general equation for collector current can now be used to check the
design using actual calculated resistor values.
9. After the circuit is designed, RB may be adjusted to obtain an exact value
of IC.
Table of Typical Resistor Values for Indicated Bias (VCC = 20 V)
Bias

hFE

RC

RB

RB1

RB2

10 V, 5 mA
10 V, 10 mA
15 V, 15 mA

50
50
50

1.62K
909
316

12.1K
6.81K
4.22K

7.5K
6.19K
10K

1.96K
1.96K
1.96K

0.98 K
0.98K
K
0.98
1 K)
K)
11K)

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Data subject to change. Copyright 2007-2010 Avago Technologies, Limited. All rights reserved. Obsoletes 5952-8376
5988-0424EN - May 11, 2010