Detailed solution of IES 2014 (ECE) Conventional Paper I

Sol. 1 (a)
(i) Conductivity is a degree to which a specified material conducts electricity and gives idea how much
smooth flow is of electricity by a carrier. Mobility is degree to which specified material can move freely
and easily and it gives idea about ability of movement of a carrier.
(ii) Zener break down occurs in highly doped Zener diode and it is due to tunneling phenomenon while
Avalanche breakdown occurs in lightly doped Zener diode and it is avalanche multiplication due to
successive collisions of electrons in depletion region of Zener diode. Zener occurs at smaller value of break
down voltage while avalanche occurs at higher value of break down voltage.
(iii) Piezo-electric materials which are insulators become electrically polarized in presence of mechanical
stress and produce voltage which is reversible process. Ceramic materials are in organic materials and are
combination of metal and non metals which are generally formed by action of heat and subsequent cooling.
E
(iv) Direct band gap:
k

Minima of C.B coincides with Maxima of VB and here energy is emitted in form of light by photons
E
Indirect band gap:
k

Minima of C.B does not coincides with Maxima of VB and here energy is emitted in form of heat.
(v) Polarisability is the ability of molecules to be polarized and express as dipole moment per unit electric
Field. Permittivity is the measure of resistance which is encountered when forming and electric field in
a medium. Unit of polarisability is F-m2 while permittivity has no unit.
Sol: 1(b)
(i)
Given condition that NMOS is in Saturation region

ID K VGS VT

VGS 2.1V & VT 1V

Then ID 0.8 103 2.1 1 =0.968 mA which is nearly equal to 1 mA

2

gm

(ii)

dId
2K VGS VT
dVgs

g m 2 0.8 103 1.1 = 1.76 mA / V

(iii) If VI=10 mV then new VGS=2.11 Volt so transistor will still remains in saturation region
ID K VGS VT = 0.8 103 2.11 1 0.9856mA
2

Output voltage V0 VDD RID 9 0.9856mA 2 7.0288Volt

Sol.1(c):

2Vj 1
1

q NA ND

Since NA ND so

1
1

NA
ND

2Vj

So here W

qN A

But p qN A p so W

2Vj p
p

Sol.1(d) :
To synthesize a driving point immittance function z(s) the first step is to decompose it into a sum of simpler
positive real functions z1(s), z2(s), z3(s), z4(s),. zn(s), and then to synthesize these individual z(s) as
elements of the overall network whose driving point impedance is z(s).
A function is said to be positive real function if it satisfies the following conditions:
1. F(s) is real for real s i.e F() is real
2. F(s) may have only simple poles on the jw axis with real and positive residues
3. Re F( jw) 0 for all w

Z s
Sol.1(e):

6 s 3 s 9
27
9
6
s s 6
s (s 6)

h t e2t u t ,

x t e t u t

Y s X s .H s
Y s

1
1

s 1 s 2

y t e t u t e2t u t
Sol.1(f):
when clock is high complete circuit responds similarly to an OPMAP in unity gain feedback
configuration when clock is low input voltage at that time is stored on capacitor. By use of OPAMP in
feedback loop input impedance of sample and hold circuit is greatly increased.
Figure:
CLK

Vin

Sol.1 (g): Propagation constant (P)

Vout

CHold

R jL G jC

As frequency is not mentioned so problem cant be solved

Sol.1 (h): It is a transducer which uses change in the electrical resistance to measure strain. Here electrical
resistance is proportional to instantaneous spatial average strain over its surface.
Applications :
1. Vibration measurement
2. Compression and tension measurement
3. Contractions in muscles in medical science
4. Blood pressure measurement
5. Used in volumetric differential low pressure

Temperature compensation in strain gauge:

Active gauge
Force

Dummy or
compensating
gauge

The active strain gauge is installed on the test specimen while the dummy or compensating gauge is installed
on a like piece of material and is not specified to strain.
Sol. 3(a)

As np n i 2
n NA p ND

NA 0

but

n p ND
n n ND ni2
n

N D N D 2 4n i 2
2
2

But n cannot be negative so

N
ND ni D 4
ni
n
2

As ND n i
2

ND

can be neglected.
ni

p
Sol. 3(b)

N D 2n i
2
ND

ND

4n i 2

N
neglecting D
ni

N D 2n i
2
+ V1

+ V2

D1

D2
5V

D1 is R.B and Non conducting

D2 is F.B but Non conducting
D1 is not in breakdown as VB = 50 V but 5 V1 V2
Both diodes are in series, in D1 reverse current will flow from N to P while in D2 current will flow
from P to N so here I1 I2

VV2

I0 I0 e T 1 V2 2VT n2 = 34.66 mV=0.03466 Volt

So here V1 5 V2 4.9653V
light

Sol. 3(c)

n type S.C
x<0

x=0

x>0

10cm

dp p p0 p

since it is N-type SC so major change will be in concentration of holes only

dt
p
p
and not electrons.
dp
Here given
1021 EHP / cm3 / sec
dt
So p 1021 106 1015 / cc n
here,
dx = 34.6 m
here; Initially in N type s.c, holes are minority and only contribution which is dominant is
after the following of light.
So dx = 34.6 m

J p 5.536 103 A/m2

And

Ip J p area

Ip 5.536 mA
Now, Initially ND 4.5 1015 /cm3
Now
Then

n
1021
n

n 1015 / cm3

Change in e is n ' 4.5 1015 1015

Thus

3.5 1015 / cm3

Applying continuity equation.

1 dJ n 3.5 1015

q dx
106
Now, J n 19.376 103 amp / m2
In J n A

In 19.376mA
4

Sol. 3. (d)

VCC 20V, VCE 8V, VE 6V, S 10, 200, IC 5mA

Vcc
Rc

R2

RC

Re

R1

RE

VCC

R1||R2
VT

Now

RE
1

RE RB

R E 1.2k

VE R E IE

IE IC ; ' ' is very high

As

Then VCC VCE IC R C R E R C 1.2k

s

1
RE
1
R E R TH

RE
1

RE RB
S

R B 11.365k

Now,

R 1R 2
11.365k
R1 R 2

VT VBE R1 || R 2
Then;

IE
IE R E

R1
0.3492
R1 R 2
R 1R 2
11.365
R1 R 2

R 2 32.545k
R1 17.462k

Sol. 3.(e)

Initially T is switch off then capacitor get charged to 10V in steady state. So capacitor is
charged to 10 Volt . at t=0 capacitor voltage will remain at 10 volt Now T becomes ON by 4
volt Here VDS=10 Volt and VGS=4 Volt so MOSFET will be replaced by resistance then
1 1
1
where g m 2K VGS VT 2 5 103 2 20 mA / V
rds on
g m r0 g m

rds

1
50 Now rds and C will be in parallel and capacitor will discharge through rds
20mA / V

V(t) V0e t / 5 10e t / where 100 1012 50 s

t ln 2 100 1012 50 0.6932s 3466 psec 3.47 n sec

Sol. 4(a)

Z transform offers significant advantage relative to time domain procedures. By this we can
model discrete time physical systems with linear differential equations with constant
coefficients one example is linear time variant digital filter. The Z transform of a difference
equation gives us a good description of the characteristics of the equation and hence of
physical system. In addition transformed difference equations are algebraic and therefore
easier to manipulate.

The Z transform of a sampled signal or sequence is defined as : Z f (kT) f (kT)z k

k 0

Sol.4(b)

Y s

s
( There is misprint in this question)
s s 3s 2
2

1
s 3s 2
1
1
Y s

s 1 s 2
Y s

y t e t u t e2t u t
Sol.4(d)

N
E

E only Educated
B both
V only voters
N None
Probability of educated = 4/10
2
Probability of both =
10
5
Probability of voters =
10
E B V N 100%
V B 40%
B 20%
B E 50%
E = 30%
V = 20%
N= 30%
2 /10 1
(i)
P Voter

Educated 4 /10 2

(ii)

Not educated 2 /10 2

P

Voter

5 /10 5

30
3

100 10
By duality theorem

(iii)
Sol.4(e)

P N

f t
F
F t
2f

sgn t

2
j

2 sgn
jt

sgn
jt

Sol.5(a)

100V

I1

I2

Applying KVL in loop 1

100 / s 10I1 sI1 10 I1 I2

(1)

I1 , I2 are in 's ' domain

Applying KVL in loop 2

sI2 10I2 10 I2 I1 0
s 20
I1 I2

10
Put (2) in (1)
10 / 3
5/3
5
I2

s
s 30 s 10

.(2)

i t 3.333 1.67e30t 5e10t u t

Sol.5.(b)

It is a parallel parallel combination hence total Y parameter will be added.

[Y]1

[Y]2

Y Y1 Y2

 2 / 3 1/ 3

1/ 3 2 / 3

Y1

2 / 3 1/ 3
Similarly Y 2

1/ 3 2 / 3
So

4 / 3 2 / 3

2 / 3 4 / 3

Y Y1 Y2

4
3
So over all Y parameter of above network is : Y U + Y L =
2
3
sol.5(c)

R1

R2

+ I1
V1

dR2I1
+

2
3
4
3

I2 +

R3

V2

V1 R1 R 3 I1 R 3I2

----(1)

V2 dR 2 R 3 I1 R 2 R 3 I2

----(2)

We gate

Z11 R1 R 3 ,

Z12 R 3

Z21 dR 2 R 3 ,

Z22 R 2 R 3

Z12 Z21 so network is not reciprocal.

As

R R3
2 R3

Sol. 6 (a)

Z dR1

R 2 R 3

Charge density

500
20c / m2
25

R3

dq 20 2xdx

dE

1 dq
40 x 2

1
40

x 5

x 0

dx

20 106 2x
dx
x2

1.82 106 N / C
F Q.E 50 106 1.82 106
F 91N

Sol. 6(b) V
V

20

Q
80

a 2 h 2 h where

a2 h2 h

Q
Q

2
.2
4

40 109 9 109
2

2 2 52 5

180 0.385 69.3Volt

Q 40nC 40 109 C where r 5m

Potential V

V 9 109
Sol.6(c)

1 Q
40 r

40 109
V 72V
5

15m,

Z01 300

3m

z 02 150

f 50MHz

c 3 108

6m
f 50 106

Length of quarter wave line =

6
= 1.5m
4
4

Characteristic impedance
Z0 Z01.Z02 300 150
Z0 212.13

Reflection coefficient

Sol.6(d)

Z02 Z01
Z02 Z01

150 300 150

1

150 300 450

3

1
1
1 | |
34
VSWR

1 | | 1 1 2
3
VSWR 2
a b = 2.3 cm 1.0 cm
Operating frequency f = 1.5 fc
Guide wave length g = ?, Phase velocity vp = ?
As
So

a
2
b
first five modes will be

TE10 , TE20 , TE01 ,TE11 and TE02

Cut of frequency f c

c
2 r r

m n

a b

For TE10 mode

2

c 1
f c TE10

0 = 6.52 GHz
2 1 2.3

f 1.5fc 1.5 6.52 9.78GHz

c
3 1010

3.067cm
f 9.78 109
9

f
1 c
f

3.067
f
1 c
1.5f c

3.067
4.12cm
0.7453
v p f g

v p 9.78 109 4.12 102 m / s

v p 4.024 108 m / s

Similarly we calculate guided wavelength (g) & phase velocity (vp) for next modes
Mode Guided wavelength g Phase velocity v p
TE10
TE 20

4.12cm
2.06cm

4.02 108 m / s
4.02 108 m / s

TE 01
TE11

1.79cm
1.64cm

4.02 108 m / s
4.02 108 m / s

TE 02

0.89cm

4.02 108 m / s

Sol.7(a)
(i) Absolute error= Actual value-measured value =20-18=2 mA
Absolute error
2
(ii) Percentage error =
100% 100% 11.11%
Measured value
18
(iii)Relative Accuracy =

Actual value Absolute error 20 2

=
0.9
Actual value
20

(iv) Percentage accuracy =90%

16 19 20 17 21 18 15 16 18 17
(v) Precision=
17.7
10
Sol. 7(b)
Total deflection in beam is given by d

2eVa
eVd L L

2 D where v 2
m
ms v 2

Here s is separation between deflecting plates and s=5mm

Here D is distance of screen from centre of plates and D=30 cm
Here L is length of each deflecting plate and L=2 cm
Here d=3 cm and Vd should be calculated

2eVa 2 1.6 1019 2000 6.4

v

1015
31
m
9 10
9
eVd L L

d
2 D
ms v 2

10

Vd
L

s 2 Va

3 102

D
2

Vd
2 102 2 102

30 102

3
5 10
2 2000 2

Solve Vd from here and that will be answer :

Sol. 7(c)

Given R 0 4k,

R 40 800

1 1
R T1 R T2 exp
T1 T2

So

Now

1
1
R 0 R 40 exp

273 313
3438.96per K
1
1
R 0 R 50 exp

273 323

R 50 569.1
And for R100

1
1
R 0 R100 exp 3438.96

273 373

R100 136.57

Sol.7(d)

So range of resistance 569.1 to 136.57

Given,
A 2.5cm2 2.5 104 m2

Separation d 3mm 3 103 m

P 104 N / m2 , deflection = 0.3 mm = 3 104 m

C = 300 PF
Capacitance after a pressure of 104 N/m2
A
C
d
A 300PF 3 103

C'

A
300PF 3 103

d x 3 0.3 103

C ' 333.33PF

11