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n = 1018 cm-3
T = 300 K
Part- B
22. Explain the Gunn effect and RWH theory.
23. Explain the RWH theory for Gunn diode. What are the various Gunn oscillation modes?
24. Explain the two valley model theory of Gunn diode. Obtain the condition for negative
resistance.
25. Explain the different modes of operation of a Gunn diode. What is the significance of the
LSA mode of operation?
26. With the help of neat diagram explain the structure and working of IMPATT diode. What is
the maximum possible efficiency of an IMPATT?
27. With the help of neat diagram explain the structure and working of TRAPATT diode. What
is the maximum possible efficiency of a TRAPATT?
28. Explain the steps involved in the design of one port negative resistance oscillator.
29. Explain the steps involved in the design of single stage transistor amplifier.
30. Substantiate that a negative one port oscillator needs cavity for sustained oscillations.
31. A microwave transistor has the following S parameters at 10GHz, with a 50 reference
impedance:
S11 = 0.45150o , S12 = 0.01 10o , S21 = 2.4510o , S22 = 0.40150o
The source impedance is Zs =20 and the load impedance Zl= 30. Compute the power
gain, the available gain, and the transducer power gain.
32. The S parameter for the HP HFET-102 GaAs FET at 2 GHz with the bias voltage = 0 are
given as follows(Zo=50): S11 = 0.894150o , S12 = 3.122 10o , S21 =0.020 10o ,
S22 = 0.781150o . Determine the stability of this transistor by using k- test and test for
unconditional stability and plot stability circles on a smith chart.