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Halogen-Free Product
Advanced Power
Electronics Corp.
BVDSS
60V
RDS(ON)
18m
ID
60A
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G D
TO-263(S)
Parameter
TO-220(P)
S
Rating
Units
VDS
Drain-Source Voltage
60
VGS
Gate-Source Voltage
+25
ID@TC=25
60
ID@TC=100
38
IDM
230
PD@TC=25
89
0.7
W/
45
mJ
30
EAS
IAR
Avalanche Current
TSTG
-55 to 150
TJ
-55 to 150
Thermal Data
Symbol
Rthj-c
Parameter
Maximum Thermal Resistance, Junction-case
4
Value
Units
1.4
/W
Rthj-a
40
/W
Rthj-a
62
/W
1
201104186
AP9972GS/P-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
60
BVDSS
BVDSS/Tj
0.06
V/
RDS(ON)
VGS=10V, ID=35A
18
VGS=4.5V, ID=25A
22
VGS=0V, ID=250uA
VGS(th)
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=10V, ID=35A
55
IDSS
VDS=60V, VGS=0V
10
uA
250
uA
Gate-Source Leakage
VGS=+25V, VDS=0V
+100
nA
ID=35A
32
51
nC
IGSS
Qg
Qgs
Gate-Source Charge
VDS=48V
nC
Qgd
VGS=4.5V
20
nC
VDS=30V
11
ns
td(on)
tr
Rise Time
ID=35A
58
ns
td(off)
RG=3.3,VGS=10V
45
ns
tf
Fall Time
RD=0.86
80
ns
Ciss
Input Capacitance
VGS=0V
3170 5070
pF
Coss
Output Capacitance
VDS=25V
280
pF
Crss
f=1.0MHz
230
pF
Rg
Gate Resistance
f=1.0MHz
1.7
Min.
Typ.
IS=35A, VGS=0V
1.2
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
Test Conditions
Max. Units
trr
IS=35A, VGS=0V,
50
ns
Qrr
dI/dt=100A/s
48
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Starting Tj=25oC , VDD=30V , L=100uH , RG=25 , IAS=30A.
4.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
AP9972GS/P-HF
200
150
10V
7.0V
10V
7.0V
T C = 150 C
150
T C =25 C
5.0V
100
4.5V
5.0V
100
4.5V
50
50
V G =3.0V
V G =3.0V
0
0
10
12
14
10
12
14
1.6
20
I D = 25 A
T C =25 o C
I D =35A
V G =10V
Normalized RDS(ON)
1.4
RDS(ON) (m)
18
16
1.2
1.0
0.8
0.6
14
2
-50
10
50
100
150
T j , Junction Temperature ( C)
20
1.7
T j =150 o C
15
IS(A)
T j =25 o C
10
1.2
0.7
0.2
0
0
0.2
0.4
0.6
0.8
Reverse Diode
1.2
-50
50
100
150
T j , Junction Temperature ( o C)
AP9972GS/P-HF
f=1.0MHz
10
10000
C iss
V DS = 30 V
V DS = 38 V
V DS = 48 V
C (pF)
I D = 35 A
1000
C oss
C rss
100
0
0
20
40
60
13
17
21
25
29
1000
ID (A)
100
100us
10
1ms
10ms
100ms
DC
T C =25 o C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
0.01
0.1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
10
100
VG
V DS =5V
ID , Drain Current (A)
80
T j =25 o C
QG
T j =150 o C
4.5V
60
QGS
QGD
40
20
Charge
0
0