Вы находитесь на странице: 1из 2

Preliminary data

HiPerFASTTM IGBT

IXGK80N60A

Symbol

Test Conditions

VCES

TJ = 25C to 150C

600

VCGR

TJ = 25C to 150C; R GE = 1 M

600

VCES
IC25
VCE(sat)
tfi

= 600 V
=
80 A
=
2.7 V
= 275 ns

Maximum Ratings
TO-264 AA

V GES

Continuous

20

V GEM

Transient

30

I C25

TC = 25C, limited by leads

80

I C90

TC = 90C

80

I CM

TC = 25C, 1 ms

200

SSOA
(RBSOA)

VGE = 15 V, TVJ = 125C, RG = 10


Clamped inductive load, L = 30 H

ICM = 100
@ 0.8 VCES

PC

TC = 25C

500

-55 ... +150

TJM

150

Tstg

-55 ... +150

0.9/6

Nm/lb.in.

10

300

TJ

Md

Mounting torque (M4)

Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10s

G = Gate
E = Emitter

C = Collector
TAB = Collector

Features
International standard package
JEDEC TO-264 AA
Two mached dice connected in parallel
Low VCE(sat)
- for minimum on-state conduction
losses
MOS Gate turn-on
- drive simplicity
Applications

Symbol

Test Conditions

BVCES

IC

= 500 A, VGE = 0 V

600

VGE(th)

IC

= 500 A, VCE = VGE

2.5

ICES

VCE = 0.8 VCES


VGE = 0 V

I GES

VCE = 0 V, VGE = 20 V

VCE(sat)

IC

= IC90, VGE = 15 V

1997 IXYS Corporation. All rights reserved.

Characteristic Values
(TJ = 25C, unless otherwise specified)
min. typ. max.

TJ = 25C
TJ = 125C

V
5

400
2

A
mA

100

nA

2.7

AC motor speed control


DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies

Advantages
Easy to mount with 1 screw
(isolated mounting screw hole)
Reduces assembly time and cost
High power density

96524A (5/97)

IXGK80N60A
Symbol

Test Conditions

Characteristic Values
(TJ = 25C, unless otherwise specified)
min. typ.
max.

gfs

I C = 40A; VCE = 10 V,
Pulse test, t 300 s, duty cycle 2 %

30

50

400

nC

70

nC

Qgc

160

nC

Cies

8000

pF

860

pF

200

pF

Qg
Qge

Coes

IC = IC90, VGE = 15 V, VCE = 0.5 VCES

VCE = 25 V, VGE = 0 V, f = 1 MHz

Cres
td(on)

Inductive load, TJ = 25C

tri
td(off)
tfi
Eoff

50

ns

IC = IC90, VGE = 15 V, L = 100 H,


VCE = 0.8 V CES, RG = Roff = 2.7

210

ns

Remarks: Switching times may increase


for VCE (Clamp) > 0.8 VCES, higher TJ or
increased RG

350

500

ns

10

12.5

mJ

td(on)

300

ns

50

ns

tri

Inductive load, TJ = 125 C

240

ns

Eon

IC = IC90, VGE = 15 V, L = 100 H

mJ

td(off)

VCE = 0.8 V CES, RG = Roff = 2.7

400

ns

tfi

Remarks: Switching times may increase


for VCE (Clamp) > 0.8 VCES, higher TJ or
increased RG

600

ns

15

mJ

Eoff

0.25 K/W

RthJC
RthCK

TO-264 AA Outline

0.15

K/W

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592
4,850,072

4,881,106
4,931,844

5,017,508
5,034,796

5,049,961
5,063,307

5,187,117
5,237,481

5,486,715
5,381,025

Вам также может понравиться