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HiPerFASTTM IGBT
IXGK80N60A
Symbol
Test Conditions
VCES
TJ = 25C to 150C
600
VCGR
TJ = 25C to 150C; R GE = 1 M
600
VCES
IC25
VCE(sat)
tfi
= 600 V
=
80 A
=
2.7 V
= 275 ns
Maximum Ratings
TO-264 AA
V GES
Continuous
20
V GEM
Transient
30
I C25
80
I C90
TC = 90C
80
I CM
TC = 25C, 1 ms
200
SSOA
(RBSOA)
ICM = 100
@ 0.8 VCES
PC
TC = 25C
500
TJM
150
Tstg
0.9/6
Nm/lb.in.
10
300
TJ
Md
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10s
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
International standard package
JEDEC TO-264 AA
Two mached dice connected in parallel
Low VCE(sat)
- for minimum on-state conduction
losses
MOS Gate turn-on
- drive simplicity
Applications
Symbol
Test Conditions
BVCES
IC
= 500 A, VGE = 0 V
600
VGE(th)
IC
2.5
ICES
I GES
VCE = 0 V, VGE = 20 V
VCE(sat)
IC
= IC90, VGE = 15 V
Characteristic Values
(TJ = 25C, unless otherwise specified)
min. typ. max.
TJ = 25C
TJ = 125C
V
5
400
2
A
mA
100
nA
2.7
Advantages
Easy to mount with 1 screw
(isolated mounting screw hole)
Reduces assembly time and cost
High power density
96524A (5/97)
IXGK80N60A
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, unless otherwise specified)
min. typ.
max.
gfs
I C = 40A; VCE = 10 V,
Pulse test, t 300 s, duty cycle 2 %
30
50
400
nC
70
nC
Qgc
160
nC
Cies
8000
pF
860
pF
200
pF
Qg
Qge
Coes
Cres
td(on)
tri
td(off)
tfi
Eoff
50
ns
210
ns
350
500
ns
10
12.5
mJ
td(on)
300
ns
50
ns
tri
240
ns
Eon
mJ
td(off)
400
ns
tfi
600
ns
15
mJ
Eoff
0.25 K/W
RthJC
RthCK
TO-264 AA Outline
0.15
K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025