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ISRN Electronics
Volume 2012, Article ID 780232, 29 pages
doi:10.5402/2012/780232
Review Article
Metamaterials for Wireless Communications, Radiofrequency
Identification, and Sensors
Ferran Martn
GEMMA/CIMITEC, Departament dEnginyeria Electr`onica, Universitat Aut`onoma de Barcelona,
Bellaterra, 08193 Barcelona, Spain
Correspondence should be addressed to Ferran Martn, ferran.martin@uab.es
Received 16 September 2012; Accepted 7 November 2012
Academic Editors: H.-T. Chen and W.-C. Liu
Copyright 2012 Ferran Martn. This is an open access article distributed under the Creative Commons Attribution License,
which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
This paper is focused on the application of concepts derived from metamaterials to the development of novel devices, circuits, and
antennas of interest in wireless communications, radiofrequency identification (RFID), and sensors. Specifically, it is shown that
artificial transmission lines based (or inspired) on metamaterials exhibit interesting properties, useful for the implementation of
high-performance and compact devices as well as novel functional devices. Thanks to the presence of reactive loading elements in
such artificial lines, the main line parameters, that is, the characteristic impedance and the phase constant, can be engineered. This
has opened new paths for RF and microwave circuit and antenna design on the basis of impedance and dispersion engineering.
1. Introduction
With the beginning of the century and the millennium, a
new research field appeared in the scene of Science and
Technology: Metamaterials. Indeed, the number of journal
and conference papers, special sessions in conferences, and
research and development projects and contracts related
to metamaterials has experienced an exponential growth
since 2000. Metamaterials can be considered a transversal topic, involving many dierent disciplines and fields,
such as acoustics, electromagnetism, RF and microwave
engineering, millimeter wave and THz technology, microand nanotechnology, photonics and optics, and medical
engineering, among others. During the last years, several
books devoted to metamaterials have been published by
active researches in the field [19]. Such books cover dierent
aspects of metamaterial science and technology, including
theory, technology, and applications. In this paper, the focus
is on the applications of metamaterial concepts to the design
of RF/microwave devices for wireless applications, radiofrequency identification (RFID), and sensors. Therefore, we
recommend the reader the books [13, 6, 8] for an indepth treatment of some of the concepts and applications
included in this paper, since these books are mainly devoted
to electromagnetic metamaterials.
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0
10
20
30
40
50
4.5
(a)
5.5
6
Frequency (GHz)
6.5
(b)
Figure 1: First LH metamaterial fabricated from a periodic array of metallic posts and SRRs, and frequency response (dashed line). The
solid line is the measured frequency response of the structure without metallic posts. From [13]; copyright 2000 APS, reprinted with
permission.
= L C ,
(1)
=
re ,
=
(2)
vp
c
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t
h
t
W
h
r
Microstrip
r
CPW
Figure 2: Perspective three-dimensional view of the indicated planar transmission lines, and relevant geometry parameters. These
conventional planar transmission lines are the typical host lines used for the implementation of metamaterial transmission lines, as will
be later shown. In the microstrip line, the backside metal layer is the ground plane, whereas in CPW technology the ground planes are at the
same metal level than the conductor (central) strip.
vg =
d
d
1
1
,
L C
(3)
2
.
(4)
ZB =
Zs ()
,
Z p ()
(5)
Zs () Zs () + 2Z p () ,
(6)
1 + Zs ()/2Z p ()
(7)
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C
(a)
2C
2C
(b)
L/2
(c)
L/2
(d)
Figure 3: Equivalent circuit model of backward (a) and forward (b) transmission lines. The T-circuit models of the basic cell structures are
also indicated in (c) and (d).
Application of expressions (5) and (6) to the unit cell (Tcircuit) of the backward line gives
cos L l = 1
ZBL
1
,
2LC2
L
2
=
1 cL ,
ZBR
LC 2
,
2
L
2
=
1 2 ,
cR
(8)
R = L C ,
(9)
(10)
(11)
ZBR =
L
Zlw ,
C
(12)
(13)
1
l
= = ,
R
LC
LC
vgR =
(14)
1
= v pR
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cR
cL
R l
L l
(a)
(b)
ZBL
Z BR
1
1
cR
(c)
cL
(d)
Figure 4: Typical dispersion diagram of a forward (a) and backward (b) transmission line model. The dependence of the normalized (ZB /Zlw )
Bloch impedance with frequency is shown in (c) and (d) for the forward and backward lines, respectively. Zlw is the maximum value of the
impedance. Notice that for the backward transmission line the group velocity tends to infinity as frequency increases. Actually, the model is
not valid at high frequencies since this implementation requires a host line that introduces parasitic elements to the model.
ZBL =
v pL =
vgL =
L
Zlw ,
C
= 2 l LC < 0,
L
1
(15)
= +2 l LC > 0
and the phase and group velocities have opposite signs. From
a mathematical point of view, in the dispersion diagrams for
the forward and backward lines depicted in Figure 4, and
obtained from expressions (8) and (10), the sign of can
be either positive or negative. This ambiguity comes from
the two possible directions of energy flow, namely, from left
to right or vice versa. If we adopt the usual convention of
energy flow from left to right, then the sign of the phase
constant is determined by choosing that portion of the curves
that provide a positive group velocity (bold lines in Figures
4(a) and 4(b)). From this, it is clear that for the forward
transmission line, and v p are both positive, whereas these
magnitudes are negative for the backward transmission line.
In both cases, vg is positive as one expects on account of the
codirectionality between power flow and group velocity.
In the backward and forward transmission lines depicted
in Figure 3, it is possible to identify eective constitutive
parameters. To this end, we should take into account that
transverse electromagnetic (TEM) mode propagation in
planar transmission media and plane wave propagation
in isotropic and homogeneous dielectrics are described by
identical equations (telegraphists equation) provided the
following mapping holds:
Zs () = je ,
Y p () = je ,
(16)
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LR /2
2CL
LR /2
2CL
s =
LL
(17)
L
e = ,
l
e =
(18)
1
2 Cl
2p
1 2 ,
2
L 1 2 /2
s2
L2R 2
R
s
1 2 ,
ZB =
CR 1 2p /2
4
(19)
(20)
1
,
LR CR
L =
1
,
LL CL
(23)
2
2
s()
1 s
=
2
l
2
R
G2 = max s , p .
1
,
2 Ll
2
2
cos l = 1 2 1 s2
2R
(22)
1
p =
,
LL CR
CR
e =
1
,
LR CL
s() =
2p
,
2
if < min s , p ,
if > max s , p .
+1
(24)
(25)
From the phase constant (24), the phase and group velocities
can be easily inferred, these velocities being of opposite sign
in the left-handed band and both being positive in the right
handed band. With regard to the constitutive parameters
for the CRLH transmission line, they can be inferred as
previously indicated, that is,
e =
CR
1
2
,
l
LL l
e =
LR
1
2
l
CL l
(26)
(21)
ZB =
LR
=
CR
LL
CL
(27)
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ZB
G2
G1
G1
G2
(a)
(b)
Figure 6: Typicaldispersion diagram (a) and variation of characteristic impedance with frequency (b) in a CRLH transmission line model.
In this example, s < p .
ZB
(a)
(b)
Figure 7: Typical dispersion diagram (a) and variation of characteristic impedance with frequency (b) in a balanced CRLH transmission
line.
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LR /2
LR /2
2CL
2CL
LL
CR
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9
L1
C1
C1
L1
L2
C2
C2
L2
LM
CM
CM
LM
L1
C1
L2
C2
LM
CM
(a)
CM
C2
C1
C1
C2
CM
LM
L2
L1
L1
L2
LM
LM
L2
L1
CM
C2
C1
(b)
2Lhp
2Lhp
Chp /2
Chp /2
Lhs /2 2Chs
2Chs Lhs /2
Lvs
Lv p
Cv p
Cvs
in [6, 45]. When the SRR is excited by an external timevarying magnetic field directed along the SRR axis, the cuts
on each ring force the electric current to flow from one ring
to another across the slot between them, taking the form of
a strong displacement current. The slot between the rings
therefore behaves as a distributed capacitance, and the whole
SRR has the equivalent circuit shown in Figure 13(a), where
Unit cell
detail
2
=
Ls Co
2
.
ro Ls Cpul
(28)
10
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Center conductor
Ground planes
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11
LS
rext
CC
r0
L0 /2
C0 /2
y
c
C0 /2
L0 /2
LC = L0 /4
CS = C0 /4
x
(a)
(b)
Port 1
d
LS
C0
L0
c
rext c
CC
Port 2
(c)
(d)
Figure 13: Typical topology and circuit model of several metamaterial resonant particles: SRR (a); CSRR (b); OSRR (c); OCSRR (d).
2
L
cos l = 1 + 1 2
Lp
p
Ls /L
1+
1 Ls Cs 2
(29)
with p given by
Figure 14: Typical layout of a CRLH SRR-based CPW transmission
line. The SRRs are etched in the back substrate side.
p =
1
CLp /2
(30)
12
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Cs
Ls
M/2
M/2
Cs
L/2
L/2
C/2
Lp
M/2
C/2
C/2
M/2
Ls
Lp
Lp
C/2
Ls
Cs
(1+L/4L )2
Ls = 2M 2 Cs 02 1+M 2 /2Lpp Ls
Cs =
1+M 2 /2L p Ls
Ls
2M 2 02 1+L/4L p
(a)
L = (2 + L/2L p ) L2 Ls
Lp = 2L p +
L
2
(b)
Figure 15: Circuit model for the basic cell of the CRLH SRR-based CPW structure (a). Transformation of the model to a -circuit (b). The
transformation equations from (a) to (b) are indicated.
Bottom
Top
1
.
2 Lc (C + Cc )
(31)
CL2 /2 1 s2 /2 1 2p /2
1 2p /2 + CLc 2p
2
L 1 2 /2
s2
s2
L2 2
L
s
ZB =
1 2 +
1 2 ,
Cc 1 2p /2
4
(32)
where s and p are the series and shunt resonances of the
circuit of Figure 17(b). For the balanced case, s = p = o ,
and the previous expression simplifies to
ZB =
L
2
L2 2
1 o2
Cc
4
2
2
L
+
1 o2 .
C
(33)
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13
Cs
L/2
CL
L/2
Cf
Cf
Lc
Cc
2Cg
L/2
2Cg
CL
L/2
Lc
Cg = 2Cs + C par
C=
(a)
Cc
C par = C f + CL
(b)
Figure 17: Circuit model for the basic cell of the CRLH CSRR-based microstrip structure (a). Transformation of the model to a T-circuit
(b). The transformation equations from (a) to (b) are indicated.
100
50
Zs , Z p , ZB
LH band
RH band
50
100
0.5
ZB
Zp
1.5
2
2.5
Frequency (GHz)
3.5
Zs
Figure 18: Representation of the series, Zs , shunt, Z p , and characteristic impedance (real part), ZB , for a CRLH transmission line
corresponding to the model of a balanced CSRR-based structure.
Electrical parameters are L = 45 nH, Cg = 0.48 pF, C = 10 pF,
Cc = 3 pF, and Lc = 3 nH. The depicted values of Zs and Z p are
actually the reactances. The transition frequency has been set to
fo = 1.5 GHz. From [15]; copyright 2007 IEEE, reprinted with
permission.
3. Applications of Metamaterial
Transmission Lines (Part I): Broadband
Filters and Multiband Components
Metamaterial transmission lines have found numerous applications in wireless communications, including guided wave
components and antennas. Among guided wave components, metamaterial transmission lines have been applied
to the design of enhanced bandwidth components [6673],
multiband components [16, 22, 64, 65, 7480], tightly coupled couplers [8185], resonators [86], filters and diplexers
[1618, 44, 4952, 56, 87104], and so forth. In the field of
antennas, the design of leaky wave antennas with scanning
capability has been a notable contribution [14, 105112]
(however, novel antennas based on metamaterial concepts
14
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0
S21
20
3
2.5
2
1.5
40
0
20
S11
60
40
60
0.5
1
S11 (dB)
S21 (dB)
Frequency (GHz)
3.5
0.5
0
Phase (rad/)
Electrical simulation
EM simulation
0.5
80
2
Frequency (GHz)
Electrical simulation
EM simulation
Measurement
(a)
Measurement
(b)
Figure 19: Balanced CRLH cell based on a microstrip line loaded with CSRRs (inset) and dispersion diagram (a), and frequency response
(b). The structure has been implemented in the Rogers RO3010 substrate with dielectric constant r = 10.2 and thickness h = 1.27 mm.
Dimensions are line width W = 0.8 mm, external radius of the outer ring rext = 7.3 mm, rings width c = 0.4 mm, and rings separation
d = 0.2 mm; the interdigital capacitor, formed by 28 fingers separated by 0.16 mm, has been used to achieve the required capacitance value.
From [15]; copyright 2007 IEEE, reprinted with permission.
CPW
in
Vias
CPW
out
L p /2
2C p
Lp
C p
(a)
(c)
Figure 20: Layout (a), circuit model (b), and simplified circuit model (c) of a CPW transmission line loaded with a pair of OCSRRs, where
C p = 2C p + 2C and Lp = L p /2. The backside strips (in dark grey) connecting the dierent ground plane regions are necessary to prevent the
slot mode of the CPW and the second resonance of the open complementary split ring resonators.
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15
L
Cs
Ls
C
CPW
in
CPW
out
(a)
Cs
(c)
Figure 21: Layout (a), circuit model (b), and simplified circuit model (c) of a CPW transmission line loaded with a series connected OSRR
(Ls = Ls + 2L).
metamaterial transmission lines exhibit a controllable dispersion diagram and characteristic impedance, the previous
limitation can be circumvented, and dual-band and multiband microwave devices can be implemented. Specifically,
by adding reactive elements to the line, it is possible to
force the required characteristic impedance and phase at
more than one frequency. To illustrate the potentiality
of CRLH transmission lines to the design of multiband
components, let us consider the unit cell of Figure 5 and
force a certain characteristic impedance and electrical length
at two frequencies (dual band functionality). In many
applications, the sign of the electrical length is not an issue.
Therefore, we can use the first (left handed) band for the
lower frequency and the second (right handed) band for
the upper frequency. Moreover, many microwave circuits
are based on 90 transmission lines; thus, we will consider
the synthesis of transmission lines exhibiting a characteristic
impedance and phase (electrical length) of ZA , 90 at f1 ,
and ZA , +90 at f2 . Using expressions (5) and (6), the series
and shunt reactances of the T-circuit of Figure 5 are found to
be
s (1 ) = ZA ,
(34a)
p (1 ) = ZA ,
(34b)
s (2 ) = ZA ,
(34c)
p (2 ) = ZA
(34d)
(35a)
p (n ) = (1)n+1 ZA ,
(35b)
16
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0
S21
10
20
S11
30
40
Vias
50
60
0.5
1.5
2
2.5
Frequency (GHz)
3.5
(b)
(a)
2.75
75
2.5
Frequency (GHz)
Characteristic impedance ()
50
25
2.25
Left hand band
2
1.75
1.5
1.25
0
0.5
1.5
2
Frequency (GHz)
Measurement
EM simulation
2.5
Circuit simulation
(c)
180
135
90
45
0
45
l (degrees)
Measurement
EM simulation
90
135
180
Circuit simulation
(d)
Figure 22: (a) Topology of the unit cell of a CPW CRLH transmission line based on a combination of series connected OSRRs in the external
stages and a pair of shunt-connected OCSRRs in the central stage; (b) frequency response; (c) characteristic impedance; (d) dispersion
diagram. The considered substrate is the Rogers RO3010 with thickness h = 1.27 mm and dielectric constant r = 10.2. Dimensions are
l = 12.3 mm, W = 5 mm, and G = 1.28 mm. For the open complementary split ring resonator: rext = 2.9 mm, c = 0.5 mm, and d = 1.2 mm.
For the open split ring resonators: rext = 2 mm, c = d = 0.2 mm. From [16]; copyright 2009 IEEE, reprinted with permission.
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17
0
20
40
S11
60
S21
80
100
Frequency (GHz)
(a)
(b)
20
S11
40
60
S21
80
0
10
20
30
0.9
1.1
Frequency(GHz)
100
Frequency (GHz)
(c)
Figure 23: Layout of a designed and fabricated band pass filter based on the hybrid approach (a), simulated (b), and measured (c) insertion
and return losses. Total device length excluding access lines is 4.56 cm. In (b), the simulated insertion loss for a conventional order-3 coupled
line filter with similar performance is depicted (dashed line). From [17]; copyright 2006 IEEE; reprinted with permission.
S21 (dB)
0
20
40
60
20
40
S11 (dB)
60
Frequency (GHz)
4 cells filter
Measurement (3 cells)
2 cells filter
3 cells filter
(a)
(b)
Figure 24: Layout of a microstrip filter formed by three balanced CRLH CSRR-based cells (a) and measured frequency response (b). In (b)
are also depicted the simulated insertion and return loss for a two-, three-, and four-stage device filters. The metallic parts are depicted in
black in the top layer, and in grey in the bottom layer. Dimensions are total length l = 55 mm, line width W = 0.8 mm, external radius of
the outer rings r = 7.3 mm, rings width c = 0.4 mm, and rings separation d = 0.2 mm; the interdigital capacitors are formed by 28 fingers
separated 0.16 mm. From [18]; copyright 2007 IEEE; reprinted with permission.
18
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0
Vias
S11
10
W
Dm
G
Lm2
Wm
Lm
20
S21
30
40
l
1
3
Frequency (GHz)
Measure
EM simulation
Circuit simulation
Chebyshev
(a)
Top
Bottom
(b)
Figure 25: Topology (a), photograph (b), and frequency response (c) for the designed fifth-order filter implemented by means of OSRRs
and OCSRRs. The substrate is the Rogers RO3010 with thickness h = 0.254 mm and measured dielectric constant r = 11.2. Dimensions
are l = 25 mm, W = 9.23 mm, and G = 0.71 mm. For the external OSRRs: rext = 2.5 mm, c = 0.3 mm, and d = 0.35 mm. For the central
OSRR: rext = 3.4 mm, c = 0.16 mm, d = 1.24 mm, Lm = 3.2 mm, Wm = 0.96 mm, Dm = 0.4 mm, and Lm2 = 10.64 mm. For the OCSRRs:
rext = 1.4 mm, c = d = 0.3 mm. The element values that have been used in reference of Figures 20 and 21 are for the external OSRRs:
C = 0.207 pF, Cs = 0.763 pF, and Ls = 8.501 nH; for the central OSRR: C = 0.274 pF, Cs = 0.436 pF, and Ls = 13.118 nH; for the OCSRRs:
L = 0.474 nH, C p = 4.5 pF, and Lp = 1.224 nH. From [19]; copyright 2011 IEEE; reprinted with permission.
G
W
Characteristic impedance ()
Vias
100
180
90
135
80
90
70
60
45
50
40
45
30
90
20
135
10
0
2.5
3.5
180
Frequency (Ghz)
l circuit simulation
l EM simulation
(a)
Zo circuit simulation
Zo EM simulation
(b)
Figure 26: (a) Layout of the dual-band impedance inverter based on a combination of series connected OSRRs in the external stages and a
pair of shunt-connected OCSRRs in the central stage; (b) circuit and electromagnetic simulation. The substrate is the Rogers RO3010 with
thickness h = 0.635 mm and dielectric constant r = 10.2. Dimensions are l = 9 mm, W = 4 mm, G = 0.74 mm. For the open complementary
split ring resonator, rext = 0.9 mm, c = 0.2 mm, and d = 0.2 mm. For the open split ring resonators, rext = 1.5 mm, c = 0.3 mm,and
d = 0.2 mm. The wide metallic strip in the back substrate side has been added in order to enhance the shunt capacitance of the open
complementary split ring resonator stage, as required to achieve the electrical characteristics of the device. From [16]; copyright 2009
IEEE, reprinted with permission.
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19
0
5
S21 , S31
10
15
20
S11 (dB)
0
S11
40
2.5
3
3.5
Frequency (GHz)
4.5
S31 measures
S11 EM simulation
S11 measures
S21 EM simulation
S21 measures
S31 EM simulation
(a)
(b)
Figure 27: Photograph of the fabricated dual-band power splitter (a) and frequency response (b). From [16]; copyright 2009 IEEE,
reprinted with permission.
r=
4
EIRPGr
,
Pchip
(36)
20
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10
S21 , S31
S11
20
30
40
0.9
1.2
1.5
Frequency (GHz)
1.8
S31 measures
S11 EM simulation
S11 measures
S21 EM simulation
S21 measures
S31 EM simulation
Antenna
ZA
Impedance
matching
network
CC
RC
|s|2
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21
0
33 mm
10
s (dB)
RFID
chip
1 mm
58 mm
15
S11
20
2 mm
25
16 mm
56 mm
30
0.8
0.85
0.9
Frequency (GHz)
Circuit
Electromag
0.95
Measure
(b)
(a)
Figure 30: (a) Topology of the designed system consisting of the dual-band matching network between the slot antenna and RFID chip.
The metallic parts are depicted in black on the top layer and in gray in the bottom layer. The slot antenna is etched on the bottom layer and
depicted in white. (b) Electromagnetic simulation (by including losses), and measured return loss of the fabricated device. The considered
substrate is the Rogers RO3010 with dielectric constant r = 10.2 and thickness h = 1.27 mm.
10
0
0.8
0.85
0.9
Frequency (GHz)
0.95
(a)
(b)
Figure 31: (a) Simulated and measured read ranges of the monoband and dual-band MLA RFID tags, and (b) fabricated monoband (top)
and dual-band (bottom) MLA RFID tags. The considered substrate is the Rogers RO3010 with dielectric constant r = 10.2 and thickness
h = 0.127 mm. From [23]; copyright 2011, IEEE; reprinted with permission.
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Magnetic wall
Even mode
Electric wall
Odd mode
Electric wall
1 st resonance
Electric wall
1 st resonance
Transparent
Opaque
SRR
(a)
SRR
(b)
Figure 32: (a) Cross-sectional view of a CPW loaded with a symmetrically etched SRR, and electric field distributions for the fundamental
(or even) mode (a) and for the parasitic slot mode (b). For the odd mode the CPW structure exhibits an electric wall in the symmetry plane
and it is expected that the SRR causes a notch for this mode if it is symmetrically etched.
(a)
(b)
Figure 33: Layout (a) and photograph (b) of a CPW transmission line loaded with a symmetric SRR. Dimensions are CPW length L =
12.4 mm, CPW strip width W = 1.67 mm, CPW slot width G = 0.2 mm, c = d = 0.2 mm, SRR length l1 = 12 mm, and SRR width
l2 = 1.67 mm. The substrate is the Rogers RO3010, with dielectric constant r = 10.2, thickness h = 127 m, and loss tangent tan = 0.0023.
explanation of the transparency of the symmetric SRRloaded CPW. However, by rotating or laterally displacing
the resonator, symmetry is truncated, and a notch in the
transmission coecient appears. The magnitude of this
notch depends on the deviation from symmetry and hence
we can detect displacement or rotation. An advantage of this
configuration is that the sensor is insensitive to variations
in ambient conditions, since the sensing variable is not
the resonator frequency. Based on this principle, prototype
sensors have been developed (Figure 33) [24]. Figure 34
depicts the variation of the notch magnitude with lateral
displacement and rotations of the SRR. As can be seen,
significant sensitivity is achieved. Hence, these symmetric
structures are useful for sensing and are of special interest for
displacement and rotation sensors, alignment sensors, and so
forth.
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23
Rotation (degrees)
Rotation
References
S21 (dB)
10
Displacement
20
30
0.1
0.2
0.3
0.4
Displacement (mm)
the Project 2009SGR-421. This work has also been supported through the CONSOLIDER-INGENIO 2010 Program (Spain-MICIIN) under Project no. CSD2008-00066.
0.5
0.6
Measures
EM simulation
Figure 34: Insertion loss at first resonance for the prototype device
shown in Figure 33, resulting by laterally displacing and by rotating
the SRR. From [24]; copyright 2011, MDPI Publishing; reprinted
with permission.
6. Conclusions
In summary, it has been shown that metamaterial transmission lines, consisting of host lines loaded with reactive
elements, exhibit further design flexibility as compared to
conventional lines. In these artificial lines, both the characteristic impedance and the dispersion can be engineered or
tailored, and many advantages are derived from this fact.
Indeed, metamaterial transmission lines have opened the
path to a novel design approach of planar microwave circuits
based on dispersion and impedance engineering. Compact
size, high performance, and novel functional devices are
some of the benefits of metamaterial transmission lines. In
this paper, it has been shown that these lines can be applied
to the design of broadband filters, multiband components,
dual-band tags for UHF-RFID, and sensors based on the
symmetry properties of SRR-loaded lines. However, many
other applications have been demonstrated, and others are
expected in the near future.
Acknowledgments
This work has been supported by Spain-MICIIN (Project
Contracts TEC2010-17512 METATRANSFER and TEC201113615-E). Thanks are also given to the Catalan Government
for funding CIMITEC and for giving support through
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