OPTOELECTRONIC DEVICES

Light- Emitting
Diodes
LEDs

Red LED

LED for displays

White LED

Blue LED

LED for traffic light

OPTOELECTRONIC DEVICES

DIODE LASERS
Diode lasers have been used for cutting,
surgery, communication (optical fibre),
CD writing and reading etc

Producing Laser in the

Lab

Optoelectronic devices for

Photovoltaic Applications

Solar Cells

Fibre optics Communication

Transmitter Channel Receiver

IR - Lasers

IRPhotodetector

Head Mounted Display Applications: Next

generation head mounted display and virtual
reality training

I op qAg op L p Ln g op

I I th e

qV / kT

1 I op

Lp

L
qV / kT
n

I qA
pn
np e
1 I op

n
p

kT g op

Voc
ln
q g th

with the assumption p n n p , p n and g th

pn

SOLAR CELLS

SOLAR CELLS

SOLAR CELLS

Finished Solar Cell

Cross Section

SOLAR CELLS

I m Vm
Fill factor
I sc Voc

P max f . f I sc Voc

PHOTO DETECTORS

Quantum efficiency ,
Q=(Jop/q)/(Pop/h)
where Jop photocurrent density
Pop- incident optical power density

GAIN, BANDWIDTH AND SIGNAL-TO-NOISE RATIO OF

AVALANCHE PHOTO DETECTORS

 Signal to-noise Ratio

Johnson Noise Random thermal motion of the
carrier
Shot Noise random thermal generationrecombination of EHP
Noise equivalent power (NEP)- is the minimum
detectable signal that would produce the same rms
output as the noise
Detectivity D=1/NEP

WAVEGUIDE PHOTO DETECTORS

LIGHT EMITTING MATERIALS

LIGHT EMITTING MATERIALS

FIBER OPTIC COMMUNICATION

Light Amplification by Stimulated Emission of Radiation (LASERS)

n2
e ( E2 E1 ) / kT e h12 / kT
n1

Light Amplification by Stimulated Emission of Radiation (LASERS)

B12n1(12) = A21n2
+
B21n2(12)
Absorption = Spontaneous +

B12n1(12) = A21n2
+
B21n2(12)
Absorption = Spontaneous +
Stimulated
Stimulated emission rate
B21
emissionB21n2 (emission
12 )

Spontaneous emission rate

A21n2

A21

(12 )

Stimulated emission rate B21n2 (12 ) B21 n2

Absorption rate
B21n1 (12 ) A21 n1

Light Amplification by Stimulated Emission of Radiation (LASERS)

m
L
2
0 n where n is refractive index of the laser material

SEMICONDUCTOR LASERS
Population Inversion at a junction

n N c e ( Ec Fn ) / kT ni e ( Fn Ei ) / kT
p Nve

( Fp Ev ) / kT

ni e

( Ei Fp ) / kT

SEMICONDUCTOR LASERS

( Fn Fp ) h
( Fn Fp ) E g

SEMICONDUCTOR LASERS

Emission Spectra for p-n junction Lasers

mo
L
2n

or m

2 Ln

dm
2 Ln 2 L dn
2
do
o do
o

o dn
1
m
or o
2 Ln
n do
2

If we let m=-1, we can calculate the change in

wavelength o between adjacent modes

Basic Semiconductor Lasers

Heterojunction Lasers

Heterojunction Lasers

Double -Heterojunction Laser structure

Separate Confinement and Graded Index Channels

Vertical Cavity Surface-Emitting Lasers (VCSELs)

High Frequency and

High-Power Devices

 Tunnel Diode
IMPATT Diode
P-N-P-N Diode
Insulated Gate Bipolar Transistor
(IGBT)

 Tunnel Diode
Degenerate n-type if n>NC
Degenerate p-type if p>Nc

Tunnel Diode

Tunnel Diode Band Diagram

Tunnel Diode Characteristics

Impact Avalanche Transit-Time (IMPATT) Diode

Time dependence of the growth and drift of holes in Read Diode

L 11

vd 2 f

vd
or f
2L

The transferred electron mechanism

The transferred electron mechanism

The transferred electron mechanism

Formation and drift Space Charge Domains

The P-N-P-N Diode

Two Transistor Analogy of SCR

iC1 1i I CO1 iB 2
iC 2 2i I CO 2 iB1
But iC1 iC 2 i
i(1 2 ) I CO1 I CO2 i
or i

I CO1 I CO2
1 (1 2 )

Forward Blocking State

The Semiconductor Controlled Rectifier (SCR)

Application of SCR

Insulated Gate Bipolar Transistor (IGBT)

COMFET- Conductivity Modulated FET

IGT Insulated Gate Transistor
IGR- Insulated Gate Rectifier
GEMFET- Gain Enhanced MOSFET
BiFET- Bipolar FET

Characteristics of IGBT:
It has very high input impedance like MOSFET

It has a low input capacitance

In the ON state , it has low resistance and high

current handling capability

It can turn off more easily than SCR