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MDF13N50 N-channel MOSFET 500V

MDF13N50
N-Channel MOSFET 500V, 13.0 A, 0.5
General Description

Features

The MDF13N50 uses advanced MagnaChips MOSFET


Technology, which provides low on-state resistance, high
switching performance and excellent quality.
MDF13N50 is suitable device for SMPS, high Speed
switching and general purpose applications.






Applications




VDS = 500V
VDS = 550V @ Tjmax
ID = 13.0A
@ VGS = 10V
RDS(ON) 0.5
@ VGS = 10V

Power Supply
HID
Lighting

Absolute Maximum Ratings (Ta = 25oC)


Characteristics

Symbol

Drain-Source Voltage
Drain-Source Voltage @ Tjmax
Gate-Source Voltage
TC=25 C
o

VDSS

500

550

VGSS

30

13

8.2

52

41
0.33

W
W/ oC

Dv/dt

4.5

V/ns

EAS

580

mJ

TJ, Tstg

-55~150

Symbol

Rating

RJA

62.5

RJC

3.05

ID

TC=100 C
Pulsed Drain Current(1)

IDM
TC=25oC

Power Dissipation

Derate above 25 oC

Peak Diode Recovery dv/dt(3)


Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range

Unit

VDSS @ Tjmax

Continuous Drain Current ()

Rating

PD

Id limited by maximum junction temperature

Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient

(1)

(1)

Thermal Resistance, Junction-to-Case

Nov2009. Version 1.2

Unit
o

C/W

MagnaChip Semiconductor Ltd.

Free Datasheet http://www.0PDF.com

MDF13N50 N-channel MOSFET 500V

Ordering Information
Part Number

Temp. Range

Package

Packing

RoHS Status

MDF13N50TH

-55~150oC

TO-220F

Tube

Halogen Free

Electrical Characteristics (Ta =25oC)


Characteristics

Symbol

Test Condition

Min

Typ

Max

Unit

Static Characteristics
Drain-Source Breakdown Voltage

BVDSS

ID = 250A, VGS = 0V

500

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250A

3.0

5.0

IDSS

VDS = 500V, VGS = 0V

IGSS

VGS = 30V, VDS = 0V

Drain Cut-Off Current


Gate Leakage Current
Drain-Source ON Resistance

RDS(ON)

VGS = 10V, ID = 6.5A

gfs

VDS = 40V, ID = 6.5A

Forward Transconductance

100

nA

0.39

0.5

13

33

10.4

Dynamic Characteristics
Total Gate Charge

Qg

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

13

Input Capacitance

Ciss

1390

VDS = 400V, ID = 13A, VGS = 10V(3)

VDS = 25V, VGS = 0V, f = 1.0MHz

Reverse Transfer Capacitance

Crss

6.3

Output Capacitance

Coss

173

Turn-On Delay Time

td(on)

30.2

52.8

60.8

tf

33.8

IS

13

Rise Time

tr

Turn-Off Delay Time


Fall Time

td(off)

VGS = 10V, VDS = 250V, ID = 13A,


RG = 25(3)

nC

pF

ns

Drain-Source Body Diode Characteristics


Maximum Continuous Drain to
Source Diode Forward Current
Source-Drain Diode Forward
Voltage
Body Diode Reverse Recovery
Time
Body Diode Reverse Recovery
Charge

VSD
trr

IS = 13A, VGS = 0V
IF = 13A, dl/dt = 100A/s(3)

Qrr

1.4

325

ns

2.9

Note :
1. Pulse width is based on RJC & RJA and the maximum allowed junction temperature of 150C.
2. Pulse test: pulse width 300us, duty cycle2%, pulse width limited by junction temperature TJ(MAX)=150C.
3. ISD 9.0A, di/dt200A/us, VDD=50V, Rg =25, Starting TJ=25C
4. L=6.2mH, IAS=13.0A,

Nov2009. Version 1.2

VDD=50V, Rg =25, Starting TJ=25C

MagnaChip Semiconductor Ltd.

Free Datasheet http://www.0PDF.com

0.9
Vgs=5.5V
=6.0V
=6.5V
=7.0V
=8.0V
=10.0V

25

20

0.8

RDS(ON) [ ]

ID,Drain Current [A]

MDF13N50 N-channel MOSFET 500V

30

15

10

Notes
1. 250 Pulse Test
2. TC=25

0.7

0.6

VGS=10.0V
VGS=20V

0.5

0.4
5

10

15

20

10

VDS,Drain-Source Voltage [V]

20

25

30

35

ID,Drain Current [A]

Fig.2 On-Resistance Variation with


Drain Current and Gate Voltage

Fig.1 On-Region Characteristics

1.2

1.8
Notes :
1. VGS = 10 V
2. ID = 5 A

1.6

BVDSS, (Normalized)
Drain-Source Breakdown Voltage

RDS(ON), (Normalized)
Drain-Source On-Resistance

15

1.4

VGS=10V

1.2

VGS=4.5V

1.0

0.8

0.6
-50

-25

25

50

75

100

125

Notes :
1. VGS = 0 V
2. ID = 250

1.1

1.0

0.9

0.8
-50

150

50

100

150

200

TJ, Junction Temperature [ C]

TJ, Junction Temperature [ C]

Fig.3 On-Resistance Variation with


Temperature

Fig.4 Breakdown Voltage Variation vs.


Temperature

100
Notes :
1. VGS = 0 V
2. ID = 250

IDR
Reverse Drain Current [A]

* Notes ;
1. VDS=30V

ID [A]

10

150

25

150

10

25

-55

0.1
0.0

1
4

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

VSD, Source-Drain Voltage [V]

VGS [V]

Fig.5 Transfer Characteristics

Nov2009. Version 1.2

Fig.6 Body Diode Forward Voltage


Variation with Source Current and
Temperature

MagnaChip Semiconductor Ltd.

Free Datasheet http://www.0PDF.com

MDF13N50 N-channel MOSFET 500V

3000
100V
250V
400V

Ciss = Cgs + Cgd (Cds = shorted)


Coss = Cds + Cgd
Crss = Cgd

Coss

2800

Note : ID = 13.0A

2600
2400

2200

Capacitance [pF]

VGS, Gate-Source Voltage [V]

10

Ciss

2000
1800
1600
1400
1200

800

Notes ;
1. VGS = 0 V
2. f = 1 MHz

1000

Crss

600
400
0

200
0

0
0.1

8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40

QG, Total Gate Charge [nC]

Fig.7 Gate Charge Characteristics

10

10

VDS, Drain-Source Voltage [V]

Fig.8 Capacitance Characteristics

14

10 s
12

Operation in This Area


is Limited by R DS(on)
1

ID, Drain Current [A]

ID, Drain Current [A]

10

100 s
1 ms
10 ms
100 ms

DC
10

10

-1

Single Pulse
TJ=Max rated
TC=25

10

10

0
25

-2

10

-1

10

10

10

50

75

100

125

150

TC, Case Temperature []

VDS, Drain-Source Voltage [V]

Fig.9 Maximum Safe Operating Area

Fig.10 Maximum Drain Current vs. Case


Temperature

14000

single Pulse
RthJC = 3.0/W
TC = 25

10

12000

D=0.5
10000

0.2

Power (W)

Z JC(t),
Normalized Thermal Response

0.1

-1

10

0.05
0.02

single pulse

6000

4000

Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Z JC* R JC(t) + TC
R JC=3.0/W

0.01

8000

2000

-2

10

-5

10

-4

10

-3

10

-2

10

-1

10

10

0
1E-5

10

t1, Rectangular Pulse Duration [sec]

1E-3

0.01

0.1

10

Pulse Width (s)

Fig.12 Single Pulse Maximum Power


Dissipation

Fig.11 Transient Thermal Response Curve

Nov2009. Version 1.2

1E-4

MagnaChip Semiconductor Ltd.

Free Datasheet http://www.0PDF.com

MDF13N50 N-channel MOSFET 500V

Physical Dimensions
3 Leads, TO-220F
Dimensions are in millimeters unless otherwise specified

S y mbol
A
b
b1
C
D
E
e
F
G
L
L1
Q
Q1
R

Nov2009. Version 1.2

Min
4.50
0.63
1.15
0.33
15.47
9.60

Nom

Max
4.93
0.91
1.47
0.63
16.13
10.71

2.54
2.34
6.48
12.24
2.79
2.52
3.10
3.00

2.84
6.90
13.72
3.67
2.96
3.50
3.55

MagnaChip Semiconductor Ltd.

Free Datasheet http://www.0PDF.com

MDF13N50 N-channel MOSFET 500V

Worldwide Sales Support Locations


U.S.A
Sunnyvale Office
787 N. Mary Ave. Sunnyvale
CA 94085 U.S.A
Tel : 1-408-636-5200
Fax : 1-408-213-2450
E-Mail : usasales@magnachip.com

China
Hong Kong Office
Suite 1024, Ocean Centre 5 Canton Road,
Tsim Sha Tsui Kowloon, Hong Kong
Tel : 852-2828-9700
Fax : 852-2802-8183
E-Mail : chinasales@magnachip.com

U.K
Knyvett House The Causeway,
Staines Middx, TW18 3BA,U.K.
Tel : +44 (0) 1784-895-000
Fax : +44 (0) 1784-895-115
E-Mail : uksales@magnachip.com

Shenzhen Office
Room 2003B, 20/F
International Chamber of Commerce Tower
Fuhua Road3 CBD, Futian District, China
Tel : 86-755-8831-5561
Fax : 86-755-8831-5565
E-Mail : chinasales@magnachip.com

Japan
Osaka Office
3F, Shin-Osaka MT-2 Bldg 3-5-36
Miyahara Yodogawa-Ku
Osaka, 532-0003 Japan
Tel : 81-6-6394-9160
Fax : 81-6-6394-9150
E-Mail : osakasales@magnachip.com

Shanghai Office
Room E, 8/F, Liaoshen International Building 1068
Wuzhong Road, (C) 201103
Shanghai, China
Tel : 86-21-6405-1521
Fax : 86-21-6505-1523
E-Mail : chinasales@magnachip.com

Korea
891, Daechi-Dong, Kangnam-Gu
Seoul, 135-738 Korea
Tel : 82-2-6903-3451
Fax : 82-2-6903-3668 ~9
Email : koreasales@magnachip.com

Taiwan R.O.C
2F, No.61, Chowize Street, Nei Hu
Taipei,114 Taiwan R.O.C
Tel : 886-2-2657-7898
Fax : 886-2-2657-8751
E-Mail : taiwansales@magnachip.com

DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Sellers customers using or selling Sellers products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.

MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product.
is a registered trademark of MagnaChip
Semiconductor Ltd.

Nov2009. Version 1.2

MagnaChip Semiconductor Ltd.

Free Datasheet http://www.0PDF.com