April 1998

FDS6680
Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET
General Description

Features

This N-Channel Logic Level MOSFET has been designed

specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.

11.5 A, 30 V. RDS(ON) = 0.010 @ VGS = 10 V

RDS(ON) = 0.015 @ VGS = 4.5 V.

The MOSFET features faster switching and lower gate

charge than other MOSFETs with comparable RDS(ON)
specifications.

PWM controllers.

The result is a MOSFET that is easy and safer to drive (even

at very high frequencies), and DC/DC power supply designs
with higher overall efficiency.

Low gate charge (typical Qg = 19 nC).

SOT-23

SuperSOTTM-6

Absolute Maximum Ratings

Symbol

Parameter

VDSS

Drain-Source Voltage

SuperSOTTM-8

Very fast switching.

SO-8

SOT-223

SOIC-16

TA = 25oC unless other wise noted

VGSS

Gate-Source Voltage

ID

Drain Current - Continuous

PD

Power Dissipation for Single Operation

FDS6680

Units

30

20

(Note 1a)

11.5

(Note 1a)

2.5

(Note 1b)

1.2

(Note 1c)

- Pulsed

TJ,TSTG

Optimized for use in switching DC/DC converters with

50

Operating and Storage Temperature Range

-55 to 150

THERMAL CHARACTERISTICS

RJA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

50

C/W

RJC

Thermal Resistance, Junction-to-Case

(Note 1)

25

C/W

1998 Fairchild Semiconductor Corporation

FDS6680 Rev.E1

Electrical Characteristics (TA = 25 OC unless otherwise noted )

Symbol

Parameter

Conditions

Min

30

Typ

Max

Units

OFF CHARACTERISTICS

BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, I D = 250 A

BVDSS/TJ

Breakdown Voltage Temp. Coefficient

ID = 250 A, Referenced to 25 oC

IDSS

Zero Gate Voltage Drain Current

VDS = 24 V, VGS = 0 V

IGSSF

Gate - Body Leakage, Forward

VGS = 20 V, VDS = 0 V

IGSSR

Gate - Body Leakage, Reverse

VGS = -20 V, VDS= 0 V

-100

nA

TJ = 55C

ON CHARACTERISTICS

mV/ oC

23
1

10

100

nA

(Note 2)

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250 A

VGS(th)/TJ

Gate Threshold Voltage Temp.Coefficient

ID = 250 A, Referenced to 25 oC

RDS(ON)

Static Drain-Source On-Resistance

VGS = 10 V, ID = 11.5 A

1.7

TJ =125C
VGS = 4.5 V, ID = 9.5 A

V
mV/oC

-5
0.0085

0.01

0.014

0.017

0.0125

0.015

50

ID(ON)

On-State Drain Current

VGS = 10 V, VDS = 5 V

gFS

Forward Transconductance

VDS = 15 V, ID = 11.5 A

40

A
S

VDS = 15 V, VGS = 0 V,
f = 1.0 MHz

2070

pF

510

pF

235

pF

DYNAMIC CHARACTERISTICS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS

(Note 2)

tD(on)

Turn - On Delay Time

VDS= 15 V, I D = 1 A

13

21

ns

tr

Turn - On Rise Time

VGS = 10 V , RGEN = 6

10

18

ns

tD(off)

Turn - Off Delay Time

36

58

ns

tf

Turn - Off Fall Time

13

23

ns

Qg

Total Gate Charge

VDS = 15 V, ID = 11.5 A,

19

27

Qgs

Gate-Source Charge

VGS = 5 V

nC

Qgd

Gate-Drain Charge

nC

nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

IS

Maximum Continuous Drain-Source Diode Forward Current

VSD

Drain-Source Diode Forward Voltage

VGS = 0 V, IS = 2.1 A

(Note 2)

2.1

1.2

Notes:
1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by
design while RCA is determined by the user's board design.

a. 50OC/W on a 1 in2 pad

of 2oz copper.

b. 105OC/W on a 0.04 in2

pad of 2oz copper.

c. 125OC/W on a 0.006 in2 pad

of 2oz copper.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%.

FDS6680 Rev.E1

Typical Electrical Characteristics

3

VGS= 10V

4.5

40

R DS(ON) , NORMALIZED

4.0

6.0
5.0

30

3.5
20

10

3.0

DRAIN-SOURCE ON-RESISTANCE

I D , DRAIN-SOURCE CURRENT (A)

50

0
0

0.5

1.5

4.5
6.0

1
0.8

25

50

75

100

125

DRAIN-SOURCE ON-RESISTANCE

1.2

Figure 3. On-Resistance Variation

Temperature.

50

50

0.03

0.02

TA = 125 oC

0.01

T A = 25 o C
0

150

4
V

GS

with

50
I S , REVERSE DRAIN CURRENT (A)

25C

40

125C

30

20

10

0
2

VGS , GATE TO SOURCE VOLTAGE (V)

10

,GATE-SOURCE VOLTAGE (V)

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

TJ = -55C

VDS = 10V
I D , DRAIN CURRENT (A)

40

I D = 11.5A

TJ , JUNCTION TEMPERATURE (C)

30

0.04

1.4

20

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

R DS(ON) ,(OHM)

RDS(ON) , NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

10

I D , DRAIN CURRENT (A)

V GS =10V

-25

10

ID = 11.5A

0.6
-50

5.0

0.5

2.5

Figure 1. On-Region Characteristics.

1.6

4.0

1.5

VDS , DRAIN-SOURCE VOLTAGE (V)

1.8

VGS = 3.5V

2.5

VGS =0V

10

TJ = 125C
1

25C

0.1

-55C

0.01
0.001
0.0001
0.2

0.4

0.6

0.8

1.2

VSD , BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage

Variation with Source Current
and Temperature.

FDS6680 Rev.E1

Typical Electrical And Thermal Characteristics

3000

VDS = 10V

ID = 11.5A

C iss

2000

15V

20V

CAPACITANCE (pF)

V GS , GATE-SOURCE VOLTAGE (V)

10

1000

C oss

500

C rss

200

f = 1 MHz
V GS = 0V

0
0

10

20

30

40

100
0.1

Q g , GATE CHARGE (nC)

0.2

0.5

10

20

30

VDS , DRAIN TO SOURCE VOLTAGE (V)

Figure 8. Capacitance Characteristics.

Figure 7. Gate Charge Characteristics.

RD

)
(ON

LIM

50

IT

100
us
1m
s
10m
s
100
ms
1s

3
1

10
s
DC

VGS = 10V
SINGLE PULSE
RJA = See Note 1c
TA = 25C

0.1

0.01
0.1

0.2

0.5

SINGLE PULSE
RJA =See Note 1c
TA = 25C

40
POWER (W)

20
10

30

20

10

0
0.001

10

30

0.01

50

0.1

10

100

300

SINGLE PULSE TIME (SEC)

VDS , DRAIN-SOURCE VOLTAGE (V)

Figure 10. Single Pulse Maximum Power

Dissipation.

Figure 9. Maximum Safe Operating Area.

r(t), NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

I D , DRAIN CURRENT (A)

100
50

1
0.5
0.2
0.1
0.05
0.02

D = 0.5

R JA (t) = r(t) * R JA
R JA =See Note 1c

0.2
0.1
0.05

P(pk)
0.02
0.01

0.01

t1
Single Pulse

0.002
0.001
0.0001

t2

TJ - TA = P * RJA (t)
Duty Cycle, D = t1 /t2

0.005

0.001

0.01

0.1

10

100

300

t1 , TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.

FDS6680 Rev.E1

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ISOPLANAR
MICROWIRE
POP
PowerTrench
QFET
QS
Quiet Series
SuperSOT-3
SuperSOT-6
SuperSOT-8

ACEx
CoolFET
CROSSVOLT
E2CMOSTM
FACT
FACT Quiet Series
FAST
FASTr
GTO
HiSeC

TinyLogic
UHC
VCX

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or
In Design

This datasheet contains the design specifications for

product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.