FDC6420C

20V N & P-Channel PowerTrench MOSFETs

General Description

Features

These N & P-Channel MOSFETs are produced using

Fairchild Semiconductors advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior
switching performance.

Q1 3.0 A, 20V.

RDS(ON) = 95 m @ VGS = 2.5 V

Q2 2.2 A, 20V. RDS(ON) = 125 m @ VGS = 4.5 V
RDS(ON) = 190 m @ VGS = 2.5 V

These devices have been designed to offer

exceptional power dissipation in a very small footprint
for applications where the bigger more expensive
SO-8 and TSSOP-8 packages are impractical.

Low gate charge

High performance trench technology for extremely
low RDS(ON).

Applications

RDS(ON) = 70 m @ VGS = 4.5 V

SuperSOT 6 package: small footprint (72% smaller than

DC/DC converter
Load switch
LCD display inverter

SO-8); low profile (1mm thick).

D2

Q2(P)

S1
D1

G2

SuperSOT

TM

-6

Pin 1

S2
G1

6
Q1(N)

SuperSOT-6

Absolute Maximum Ratings

Symbol

TA=25 C unless otherwise noted

Q1

Q2

Units

VDSS

Drain-Source Voltage

Parameter

20

20

VGSS

Gate-Source Voltage

12

12

ID

Drain Current

3.0

2.2

12

Continuous

(Note 1a)

Pulsed
Power Dissipation for Single Operation

PD

TJ, TSTG

(Note 1a)

0.96

(Note 1b)

0.9

(Note 1c)

0.7

55 to +150

(Note 1a)

130

C/W

(Note 1)

60

C/W

Operating and Storage Junction Temperature Range

Thermal Characteristics
RJA

Thermal Resistance, Junction-to-Ambient

RJC

Thermal Resistance, Junction-to-Case

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

.420

FDC6420C

8mm

3000 units

2001 Fairchild Semiconductor Corporation

FDC6420C Rev C(W)

FDC6420C

September 2001

Symbol

TA = 25C unless otherwise noted

Parameter

Test Conditions

Min

Typ

Max Units

Off Characteristics
BVDSS

DrainSource Breakdown Voltage

BVDSS
TJ

Breakdown Voltage Temperature

Coefficient

IDSS

Zero Gate Voltage Drain Current

IGSSF

GateBody Leakage, Forward

IGSSR

GateBody Leakage, Reverse

On Characteristics
VGS(th)
VGS(th)
TJ
RDS(on)

ID(on)
gFS

VGS = 0 V,
ID = 250 A
VGS = 0 V,
ID = 250 A
ID = 250 A, Ref. to 25C
ID = 250 A, Ref. to 25C
VDS = 16 V, VGS = 0 V
VDS = 16 V, VGS = 0 V
VGS = 12 V, VDS = 0 V
VGS = 12 V, VDS = 0 V
VGS = 12 V, VDS = 0 V
VGS = 12 V, VDS = 0 V

Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2

20
20

V
13
11

mV/C
1
1
100
100
100
100

nA
nA

(Note 2)

Q1

VDS = VGS, ID = 250 A

0.5

0.9

1.5

Q2

VDS = VGS, ID = 250 A

0.6

1.0

1.5

Gate Threshold Voltage

Temperature Coefficient

Q1

ID = 250 A, Ref. To 25C

Q2

ID = 250 A, Ref. to 25C

Static DrainSource
OnResistance

Q1

VGS = 4.5 V, ID = 3.0 A

VGS = 2.5 V, ID = 2.5 A
VGS = 4.5 V, ID = 3.0 A,TJ=125C

Q2

VGS = 4.5 V, ID = 2.2 A

VGS = 2.5 V, ID = 1.8 A
VGS= 4.5 V,ID=2.2 A,TJ=125C

Q1

VGS = 4.5 V,

Gate Threshold Voltage

OnState Drain Current

Forward Transconductance

VDS = 5 V

50
66
71
100
145
137

mV/C

70
95
106

125
190
184

12

Q2

VGS = 4.5 V, VDS = 5 V

Q1

VDS = 5 V

ID = 2.5 A

10

Q2

VDS = 5 V

ID = 2.0A

Q1

VDS=10 V, V GS= 0 V, f=1.0MHz

Q2

VDS=10 V, V GS= 0 V, f=1.0MHz

337

Q1

VDS=10 V, V GS= 0 V, f=1.0MHz

82

Q2

VDS=10 V, V GS= 0 V, f=1.0MHz

88

VDS=10 V, V GS= 0 V, f=1.0MHz

42

Q2

VDS=10 V, V GS= 0 V, f=1.0MHz

51

Q1
Q2

For Q1:
VDS =10 V,
VGS= 4.5 V,

6
S

Dynamic Characteristics
Ciss
Coss
Crss

Input Capacitance
Output Capacitance

Reverse Transfer Capacitance Q1

Switching Characteristics
td(on)
tr

TurnOn Delay Time

TurnOn Rise Time

tf
Qg
Qgs

TurnOff Delay Time

TurnOff Fall Time

Q1
Q1
Q2

pF

10

I DS= 1 A
RGEN = 6

18

14

ns

For Q2:
VDS =10 V, I DS= 1 A
VGS= 4.5 V, RGEN = 6

12
13

22
23

ns

10

20

1.6

Q2

10

3.3
3.7

4.6

Total Gate Charge

Q1

GateSource Charge

Q2
Q1

GateDrain Charge

pF

Q1

Q2
Qgd

pF

(Note 2)

Q2
td(off)

324

Q1
Q2

For Q1:
VDS =10 V,
I DS= 3.0 A
VGS= 4.5 V,
For Q2:
VDS =10 V, I DS= 2.2 A
VGS= 4.5 V,

0.95

ns

ns
nC
nC

0.68
0.7

nC

1.3
FDC6420C Rev C(W)

FDC6420C

Electrical Characteristics

Symbol

TA = 25C unless otherwise noted

Parameter

Test Conditions

Min

Typ

Max Units

DrainSource Diode Characteristics and Maximum Ratings

IS
VSD

Maximum Continuous DrainSource Diode Forward Current

DrainSource Diode Forward
Voltage

Q1

0.8

Q2

0.8

Q1

VGS = 0 V, IS = 0.8 A

(Note 2)

0.7

1.2

Q2

VGS = 0 V, IS = 0.8 A

(Note 2)

0.8

1.2

A
V

Notes:
1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.

a) 130 C/W when

mounted on a 0.125
2
in pad of 2 oz.
copper.

b) 140 C/W when

2
mounted on a .004 in
pad of 2 oz copper

c) 180 C/W when mounted on a

minimum pad.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%

FDC6420C Rev C(W)

FDC6420C

Electrical Characteristics

FDC6420C

Typical Characteristics: N-Channel

12
3.0V

2.5V

R DS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE

ID, DRAIN CURRENT (A)

VGS = 4.5V
10
3.5V
8

2.0V

6
4
2
0
0

VGS = 2.0V
1.8
1.6

1.4

2.5V
1.2

3.0V

4.5V

0.8

VDS, DRAIN TO SOURCE VOLTAGE (V)

10

12

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6

0.22

ID = 3.0A
VGS = 4.5V

RDS(ON), ON-RESISTANCE (OHM)

RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE

ID, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics.

1.4

1.2

0.8

0.6

ID = 1.5A
0.18

0.14
o

TA = 125 C
0.1

0.06
o

TA = 25 C
0.02

-50

-25

25

50

75

100

125

150

VGS, GATE TO SOURCE VOLTAGE (V)

TJ, JUNCTION TEMPERATURE ( C)

Figure 3. On-Resistance Variation with

Temperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

10

100

TA = -55oC

25 C

IS, REVERSE DRAIN CURRENT (A)

VDS = 5V
ID, DRAIN CURRENT (A)

3.5V

125oC
6

VGS = 0V
10

TA = 125oC

25 C

0.1

-55oC
0.01
0.001
0.0001

0.5

1.5

2.5

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics.

0.2

0.4

0.6

0.8

1.2

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDC6420C Rev C(W)

FDC6420C

Typical Characteristics

450
ID = 3A

VDS = 5V

f = 1 MHz
VGS = 0 V

10V

360
15V

CAPACITANCE (pF)

VGS , GATE-SOURCE VOLTAGE (V)

CISS
270

180
COSS

90

CRSS
0

Qg, GATE CHARGE (nC)

Figure 7. Gate Charge Characteristics.

10

15

20

Figure 8. Capacitance Characteristics.

5

RDS(ON) LIMIT

10

P(pk), PEAK TRANSIENT POWER (W)

100

ID, DRAIN CURRENT (A)

VDS, DRAIN TO SOURCE VOLTAGE (V)

1ms
10ms
100ms
1s

10s
DC
VGS = 4.5V
SINGLE PULSE
RJA = 180oC/W

0.1

TA = 25oC

SINGLE PULSE
RJA = 180C/W
TA = 25C

0.01
0.1

10

VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 9. Maximum Safe Operating Area.

100

0.1

10

100

1000

t1, TIME (sec)

Figure 10. Single Pulse Maximum

Power Dissipation.

FDC6420C Rev C(W)

FDC6420C

Typical Characteristics: P-Channel

2.75

-ID, DRAIN CURRENT (A)

VGS =- 4.5V

RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE

6
-3.0V

-2.5V
-3.5V

4
3
-2.0V
2
-1.8V
1

2.5
VGS = -2.0V
2.25
2
1.75
-2.5V

1.5

-3.0V

1.25

-3.5V
-4.5V

1
0.75

0
0

0.5

1.5

2.5

Figure 11. On-Region Characteristics.

Figure 12. On-Resistance Variation with

Drain Current and Gate Voltage.
0.4

1.6

ID = -1.1 A

ID = -2.2A
VGS = -4.5V

RDS(ON), ON-RESISTANCE (OHM)

RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE

-ID, DRAIN CURRENT (A)

-VDS, DRAIN-SOURCE VOLTAGE (V)

1.4

1.2

0.8

0.35
0.3
0.25
0.2
o

TA = 125 C
0.15
0.1
o

TA = 25 C
0.6
-50

-25

25

50

75

100

125

0.05

150

TJ, JUNCTION TEMPERATURE ( C)

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 13. On-Resistance Variation with

Temperature.

Figure 14. On-Resistance Variation with

Gate-to-Source Voltage.
10

-ID, DRAIN CURRENT (A)

VDS = -5V

TA = -55 C

-IS, REVERSE DRAIN CURRENT (A)

5
25 C
125oC

VGS = 0V
1
TA = 125oC
0.1
o

25 C
0.01
o

-55 C
0.001

0.0001

0
0.5

1.5

2.5

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 15. Transfer Characteristics.

0.2

0.4

0.6

0.8

1.2

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 16. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDC6420C Rev C(W)

FDC6420C

Typical Characteristics

5
-VGS, GATE-SOURCE VOLTAGE (V)

600

VDS =- 5V

ID = -2.2A

f = 1MHz
VGS = 0 V

-10V

500

4
CAPACITANCE (pF)

-15V
3

400
CISS
300
200
COSS
100
CRSS

0
0

Qg, GATE CHARGE (nC)

Figure 17. Gate Charge Characteristics.

20

P(pk), PEAK TRANSIENT POWER (W)

5
RDS(ON) LIMIT

10ms
100ms

-ID, DRAIN CURRENT (A)

15

Figure 18. Capacitance Characteristics.

10

1s

1
10s
DC

0.1

VGS = -4.5V
SINGLE PULSE
o
RJA = 180 C/W
o

TA = 25 C
0.01

SINGLE PULSE
RJA = 180C/W
TA = 25C

0
0.1

10

100

0.1

-VDS, DRAIN-SOURCE VOLTAGE (V)

10

100

1000

t1, TIME (sec)

Figure 19. Maximum Safe Operating Area.

r(t), NORMALIZED EFFECTIVE TRANSIENT

THERMAL RESISTANCE

10

-VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 20. Single Pulse Maximum

Power Dissipation.

1
D = 0.5

RJA(t) = r(t) * RJA

RJA = 180C/W

0.2

0.1

0.1
0.05

P(pk)

0.02
0.01

t1
t2
TJ - TA = P * RJA(t)
Duty Cycle, D = t1 / t2

0.01
SINGLE PULSE

0.001
0.0001

0.001

0.01

0.1

10

100

1000

t1, TIME (sec)

Figure 21. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.

FDC6420C Rev C(W)

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx
Bottomless
CoolFET
CROSSVOLT
DenseTrench
DOME
EcoSPARK
E2CMOSTM
EnSignaTM
FACT
FACT Quiet Series

FAST
FASTr
FRFET
GlobalOptoisolator
GTO
HiSeC
ISOPLANAR
LittleFET
MicroFET
MicroPak
MICROWIRE

OPTOLOGIC
OPTOPLANAR
PACMAN
POP
Power247
PowerTrench
QFET
QS
QT Optoelectronics
Quiet Series
SILENT SWITCHER

SMART START
STAR*POWER
Stealth
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
TinyLogic
TruTranslation
UHC
UltraFET

VCX

STAR*POWER is used under license

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into
support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or
In Design

This datasheet contains the design specifications for

product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H4