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Preferred Device
SMARTDISCRETESt MOSFET
2 Amps, 62 Volts, Logic Level
NChannel TO220
This logic level power MOSFET features current limiting for short
circuit protection, integrated GateSource clamping for ESD
protection and integral GateDrain clamping for overvoltage
protection and Sensefet technology for low onresistance. No
additional gate series resistance is required when interfacing to the
output of a MCU, but a 40 kW gate pulldown resistor is recommended
to avoid a floating gate condition.
The internal GateSource and GateDrain clamps allow the device
to be applied without use of external transient suppression
components. The GateSource clamp protects the MOSFET input
from electrostatic voltage stress up to 2.0 kV. The GateDrain clamp
protects the MOSFET drain from the avalanche stress that occurs with
inductive loads. Their unique design provides voltage clamping that is
essentially independent of operating temperature.
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2 AMPERES
62 VOLTS (Clamped)
RDS(on) = 400 mW
NChannel
R1
G
Features
R2
Value
Unit
DraintoSource Voltage
VDSS
Clamped
Vdc
VDGR
Clamped
Vdc
VGS
10
Vdc
ID
SelfLimited
Adc
PD
40
ESD
2.0
kV
TJ, Tstg
50 to 150
_C
Rating
Electrostatic Voltage
Operating and Storage Junction
Temperature Range
MARKING DIAGRAM
AND PIN ASSIGNMENT
TO220AB
CASE 221A
STYLE 5
THERMAL CHARACTERISTICS
Maximum Junction Temperature
Thermal Resistance, JunctiontoCase
Maximum Lead Temperature for Soldering
Purposes, 1/8 from case for 5 seconds
TJ(max)
150
_C
RqJC
3.12
_C/W
TL
260
_C
EAS
80
mJ
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2006
4
Drain
MLP2N06CLG
AYWW
3
1
Gate
A
Y
WW
G
= Location Code
= Year
= Work Week
= PbFree Package
3
Source
2
Drain
ORDERING INFORMATION
Device
Package
Shipping
MLP2N06CL
TO220AB
50 Units / Rail
MLP2N06CLG
TO220AB
(PbFree)
50 Units / Rail
MLP2N06CL
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
58
58
62
62
66
66
0.6
6.0
5.0
20
0.5
1.0
5.0
20
1.0
0.6
1.5
1
2.0
1.6
3.8
1.6
4.4
2.4
5.2
2.9
0.3
0.53
0.4
0.7
1.0
1.4
1.1
1.5
td(on)
1.0
1.5
tr
3.0
5.0
td(off)
5.0
8.0
tf
3.0
5.0
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
V(BR)DSS
Vdc
mAdc
IDSS
mAdc
IGSS
VGS(th)
Vdc
ID(lim)
Adc
RDS(on)
gFS
mhos
VSD
Vdc
ms
4.0
TJ = 25C
6.0 V
5.5 V
5.0 V
4.5 V
4.0 V
3.5 V
3.0 V
2
2.5 V
55C
25C
TJ = 150C
3.0
2.5
2.0
1.5
1.0
0.5
2.0 V
0
VDS 7.5 V
3.5
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2
MLP2N06CL
THE SMARTDISCRETES CONCEPT
1.0
VGS = 5 V
VDS = 10 V
4
3
2
1
0
50
50
100
ID = 1 A
0.8
0.6
25C
0.2
150
100C
0.4
TJ = 50C
0
7
8
2
3
4
5
6
VGS, GATETOSOURCE VOLTAGE (VOLTS)
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3
10
MLP2N06CL
FORWARD BIASED SAFE OPERATING AREA
0.6
ID = 1 A
0.5
VGS = 4 V
0.4
VGS = 5 V
0.3
0.2
0.1
0
50
150
0
50
100
TJ, JUNCTION TEMPERATURE (C)
ID = 2 A
80
60
Vsupply =
40
20
0
25
150
TC = (VDS x ID x DC x RqCA) + TA
64.0
63.5
VDS =
ID = 20 mA
63.0
150 TC
ID(lim) x DC x RqJC
10
62.5
62.0
61.5
61.0
1.0
60.5
60.0
50
(150 TA)
ID(lim) (RqJC + RqCA)
100
0
50
100
TJ = JUNCTION TEMPERATURE
150
0.1
0.1
VGS = 10 V
SINGLE PULSE
TC = 25C
dc
10 ms
1 ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1.0
10
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
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4
100
MLP2N06CL
1.0
D = 0.5
0.2
0.1
0.1
0.05
P(pk)
0.02
t1
0.01
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.01
1.0E05
1.0E04
1.0E03
1.0E02
t, TIME (s)
1.0E01
1.0E+00
1.0E+01
VDD
RL
toff
ton
Vout
td(on)
tr
td(off)
90%
Vin
PULSE GENERATOR
Rgen
tf
90%
DUT
z = 50 W
OUTPUT, Vout
INVERTED
50W
10%
50 W
90%
50%
INPUT, Vin
50%
PULSE WIDTH
10%
ACTIVE CLAMPING
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5
MLP2N06CL
TYPICAL APPLICATIONS: INJECTOR DRIVER, SOLENOIDS, LAMPS, RELAY COILS
The MLP2N06CL has been designed to allow direct
interface to the output of a microcontrol unit to control an
isolated load. No additional series gate resistance is
required, but a 40 kW gate pulldown resistor is
recommended to avoid a floating gate condition in the event
of an MCU failure. The internal clamps allow the device to
be used without any external transistent suppressing
components.
VBAT
VDD
D
MCU
MLP2N06CL
S
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6
MLP2N06CL
PACKAGE DIMENSIONS
TO220 THREELEAD
TO220AB
CASE 221A09
ISSUE AA
T
B
SEATING
PLANE
F
T
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
Q
1 2 3
H
K
Z
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE
ALL BODY AND LEAD IRREGULARITIES
ARE ALLOWED.
G
D
N
INCHES
MIN
MAX
0.570 0.620
0.380 0.405
0.160 0.190
0.025 0.035
0.142 0.147
0.095 0.105
0.110 0.155
0.018 0.025
0.500 0.562
0.045 0.060
0.190 0.210
0.100 0.120
0.080
0.110
0.045 0.055
0.235 0.255
0.000 0.050
0.045
0.080
STYLE 5:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48 15.75
9.66 10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70 14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
2.04
GATE
DRAIN
SOURCE
DRAIN
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7
MLP2N06CL/D