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Integrated Transformer
Stefan Zeltner, Fraunhofer Institute of Integrated Systems and Device Technology, Germany
Abstract
This paper describes in detail a novel concept for isolated gate drivers by combining the advantages of printed
circuit board (PCB) integrated transformers with the high efficiency of a resonance driven voltage clamped gate
drive circuit. The pros and cons of PCB integrated transformers in gate drive applications are discussed. The
used resonance driven voltage clamped gate drive circuit is analyzed, the efficiency of the driver circuit is calculated and compared with the measured one. Overall measurements on the developed half-bridge driver prototype
are presented and principle limitations are discussed.
Introduction
1.1
First of all the advantages and limitations of PCB integrated transformers based on standard FR-4 printed
circuit board material with 35 m copper are discussed.
2.1
Advantages
16.4 mm
Copper Layer 1 (35 m)
for primary winding
(8 turns)
Isolated wires
FPC sheet for shielding
2.2
1.62 mm
Laminate
Layer 1
(360 m)
Laminate
Layer 2
(760 m)
Laminate
Layer 3
(360 m)
Copper Layer 4 (35 m) for
primary winding (8 turns)
Vias
0.79 mm
Wires (THT)
nH n 2 D d .
(1)
L | 2.15
mm 1 2.72 d
Dd
Table 1 shows the calculated and measured inductances (Agilent 4294A with test fixture 16047E) of the
primary and the secondary windings at 4 MHz without and with ferrite polymer composite (FPC) sheets.
As can be seen eqn. (1) gives a good approximation
also for multilayer spiral windings like Lpri in Fig. 1.
From Table 1, the main disadvantage of PCB integrated transformers becomes obvious when compared, e.g., with toroidal core transformers. The attainable inductance in one layer is very small relating
to the required PCB area. As a result a high switching
frequency for the DC/DC converter is required.
Using the simple transformer model shown in
Figure 3 and the impedance analyzer measurements
for R1( f ), R2( f ), L1( f ), L2( f ) and ( f ), the voltage
transfer function V/V0, the efficiency and the output
power P are calculated for two different load conditions R.
SMD parts
L1 ( f )
1 V ( f ) :1
L2 ( f )
PCB
(2 layers)
FPC sheet for
shielding
1.22 mm
Limitations
R1 ( f )
Add-On
PCB integrated
Transformer
(4 layers)
V0( f )
L1 ( f )
R2( f )
L1( f ) (1- ( f ))
Fig. 3
Figure 2 illustrates this advantage by showing the example of another embodiment where the transformer
is placed as an add-on THT part on the backside of
the driver PCB.
V( f )
R1( f):
R2( f):
L1( f):
L2( f):
( f):
A
1,1
PR=105
Operation Principle
3.1
Block Diagram
0,9
V/V0 R=105
R=46
V/V0 R=46
0,6
0.6
12 V
0,5
0,4
0.4
1,00E+05
0.1
PR=105
0.4
1,00E+06
Single
Ended
DC/DC
10
1,00E+07
Lpri
Frequency (MHz)
T1
T4
L
T2
D4
Ceq
D2
T3
VBOT
Top
Power
Switch
D3
Lsek2
D1
C Control
Logic
VG
0,7
R=105
VTOP (15 V)
0,8
0.8
V/V0 R=1M
Lsek1
P ( W ), , V/V0
1,0
1.0
Control
Logic
Fig. 5
3.2
Bottom
Power
Switch
State 3:
In state 3 the equivalent gate capacitance Ceq is
charged by transferring the energy stored in the resonance element L to Ceq. This means that the gate voltage during the charge time tON follows a sinusoidal
waveform. When the stored energy in L is exactly that
for charging the gate, the peak value of the gate voltage is reached at the end of tON.
State 4:
To clamp the gate in the on-state T4 is switched on
during State 4.
When T1 and T2 are operated as synchronous rectifiers the losses in the gate drive stage as shown in Fig.
5 comprise conduction losses (RDS, RL), switching
losses in the full bridge, and the losses for driving the
gates of the transistors T1-T4. Because of the comparatively low switching frequency fS in drive or high
power DC/DC applications the switching losses and
the gate drive losses in T1-T4 are assumed to be negligible.
State 5:
When the control logic receives a turn-off signal, T4
is switched off and T2 is switched on with a small delay. T2 stays on for the discharge-time tOFF. During
tOFF the equivalent gate capacitance will be discharged by transferring the energy from the resonance
element Ceq to L.
Loss Analysis
State 6:
At the end of state 5 T2 is switched off and T3 is
switched on. The current through L commutates to
D1. The energy in L will be fed back during the reset
time tRES and stored in the DC link capacitor C (see
Fig. 5).
Rstate2 = RDS,T1+RL+RDS,T3 ,
Rstate3 = RDS,T2+RL ,
Rstate5 = RDS,T2+RL ,
Rstate6 = RDS,T1+RL+RDS,T3 .
(5a)
(5b)
(5c)
(5d)
RDS,Tn
T3
RL
T2
Since RL appears in each state (5a-5d) and is dominant it is assumed at this point that all conduction
losses are lumped in a resistance RAVG with an average
value given by:
T1
|IL|
4
1
VG
R AVG
VTH
tOFF
tPRE tON
tON
tRES
tPRE tON
tOFF
TS
Fig. 6
PR
State diagram
As Fig. 6 indicates, T2 could be used as a synchronous rectifier in state 3 and T1 could be used as a synchronous rectifier in state 6.
From the state diagram two principle limitations can
be derived. These are:
TS min = tPRE + tON + tOFF + tRES ,
tOFF min = tRES + tPRI ,
tON delay = tPRE .
(2)
(3)
(4)
(6)
1
TS
TS
I t dt
2
R
(7)
f S R AVG
VG2 2 3
S
2
t PRE
LC eq t PRE
2
L 3
2
(8)
Ceq VG2 f S .
(9)
Since not all of this power can be recovered, the efficiency RES of the resonant gate drive circuit is less
than 1.
K RES
PC
PC PR
(10)
1
1
R AVG 2 3
S
2
LC eq t PRE
t PRE
2
L2 C eq 3
. (11)
Experimental Results
L ,max
L|
t ON delay VG
I L ,max
17
17
16
16
VTOP
15
15
14
14
13
13
VBOT
12
12
(13)
11
11
For the developed half bridge gate driver the following values were chosen: VG = 15 V, Ceq < 40 nF,
tON-delay < 200 ns (exact 180 ns), L = 1 H, IL,max < 3 A
(exact 2.7 A)
For further measurements a 22 nF capacitor as an
equivalent gate capacitance Ceq is used. With an inductance of 1 H, 180 ns for tPRE, and a maximum
current ILmax of 2.7 A, equation (12) shows that more
energy is stored in L than needed to charge the 22 nF
capacitor, causing a preferred much faster turn-on
time tON.
VIN
VCTRL-IN
VG
tON
K RES
tOFF
10
10
0
0
100
200
0.2
300
400
0.4
500
600
0.6
700
800
0.8
900
1000
1.0
1100
1200
1.2
Inductor
PCB Transformer
31 mm
Secondary
Side (TOP)
Secondary
Side (BOT)
Primary Side
68 mm
Conclusion
Literature