BTS 4140 N

Smart High-Side Power Switch

One Channel: 1 x 1
Features

Product Summary

Current controlled input

Overvoltage protection

Vbbin(AZ)

Short circuit protection

Operating voltage

Vbb(on)

Current limitation

On-state resistance

RON

62

4.9...60 V

Overload protection
Overvoltage protection (including load dump)
Switching inductive loads
Clamp of negative voltage at output

SOT-223
4

with inductive loads

Thermal shutdown with restart
ESD - Protection

Loss of GND and loss of Vbb protection

Very low standby current

2
1

VPS05163

Reverse battery protection

Improved electromagnetic compatibility (EMC)
Application
All types of resistive, inductive and capacitive loads
Current controlled power switch for 12V, 24V and 42V DC applications
Driver for electromechanical relays
Signal amplifier

General Description
N channel vertical power MOSFET with charge pump and current controlled input,
monolithically integrated in Smart SIPMOS technology.
Providing embedded protective functions.

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2004-01-27

BTS 4140 N

Block Diagram
+ V bb
2 /4

C o n tro l
C irc u it

OUT
3
T e m p e ra tu re
Sensor

R IN
1

IN

R L

GND

Pin

Symbol

Function

IN

Input, activates the power switch in case of connection to GND

Vbb

Positive power supply voltage

OUT

Output to the load

Vbb

Positive power supply voltage

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BTS 4140 N
Maximum Ratings
Symbol

Parameter

Value

Unit

at Tj = 25C, unless otherwise specified

60

IL

self limited

Maximum current through the input pin ( DC )

I IN

15

mA

Operating temperature

Tj

-40 ...+150

Storage temperature

T stg

-55 ... +150

Power dissipation1)

Ptot

1.7

EAS

Supply voltage

Vbb

Load current (Short - circuit current, see page 5)

TA = 25 C
Inductive load switch-off energy dissipation 2)
single pulse
Tj = 150 C, IL = 0.15 A
Load dump protection 3) VLoadDump4)= VA + VS

VLoaddump

RI=2, td=400ms, VIN= low or high

IL = 150 mA, Vbb = 13,5 V

93.5

Vbb = 27 V

127
kV

Electrostatic discharge voltage (Human Body Model) VESD

according to ANSI EOS/ESD - S5.1 - 1993
ESD STM5.1 - 1998
Input pin

all other pins

1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for V
bb
connection. PCB is vertical without blown air.
2not subject to production test, specified by design
3more details see EMC-Characteristics on page 7
4V
Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 .

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BTS 4140 N
Electrical Characteristics
Symbol

Parameter
at Tj = -40...150 C, Vbb = 9...42 V unless otherwise specified

Values

Unit

min.

typ.

max.

Thermal Characteristics
Thermal resistance @ min. footprint

Rth(JA)

86

125

Thermal resistance @ 6 cm 2 cooling area 1)

Rth(JA)

60

72

Thermal resistance, junction - soldering point

RthJS

17

K/W
K/W

Load Switching Capabilities and Characteristics

On-state resistance

RON

Pin1 connencted to GND

Tj = 25 C, IL = 150 mA, Vbb = 9...52 V
Tj = 150 C

1.5

1.5

Tj = 25 C, IL = 50 mA, Vbb = 6 V

0.2

Nominal load current2)

IL(nom)

Device on PCB 1)
Ta = 85 C , Tj 150 C
Turn-on time3)

VIN = Vbb to 0V

to 90% VOUT

ton

RL = 270

125 4)

RL = 270 , Vbb = 13.5 V, Tj = 25 C

45

100

RL = 270

175 4)

RL = 270 , Vbb = 13.5 V, Tj = 25 C

40

140

Turn-off time3)

Slew rate on3)

VIN = 0V to Vbb

VIN = Vbb to 0V

to 10% VOUT

10 to 30% VOUT

toff

dV/dton

V/s

RL = 270

64)

RL = 270 , Tj = 25 C, Vbb = 13.5 V

1.3

RL = 270

84)

RL = 270 , Tj = 25 C, Vbb = 13.5 V

1.7

Slew rate off 3)

VIN = 0V to Vbb

70 to 40% VOUT

-dV/dtoff

1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for V
bb
connection. PCB is vertical without blown air.
2Nominal load current is limited by the current limitation ( see page 5 )
3Timing values only with high input slewrates, otherwise slower.
4not subject to production test, specified by design
Page 4

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BTS 4140 N
Electrical Characteristics
Symbol

Parameter
at Tj = -40...150 C, Vbb = 9...42 V unless otherwise specified

Values

Unit

min.

typ.

max.

Operating Parameters
Operating voltage

Vbb(on)

4.9

60

Standby current

Ibb(off)

10

Pin1 = open
Protection Functions1)
Initial peak short circuit current limit

IL(SCp)

(see page 11)

Tj = -40 C, Vbb = 13.5 V, tm = 100 s
Tj = 25 C
Tj = 150 C

1.2

0.9

0.2

0.7

Repetitive short circuit current limit

IL(SCr)

Tj = Tjt
Output clamp (inductive load switch off)

VON(CL)

60

Vbbin(AZ)

62

68

Thermal overload trip temperature

Tjt

150

Thermal hysteresis

Tjt

10

at VOUT = Vbb - VON(CL),

Ibb = 4 mA
Overvoltage protection
Ibb = 1 mA

1Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.

Page 5

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BTS 4140 N
Electrical Characteristics
Parameter

Symbol

at Tj = -40...150 C, Vbb = 9...42 V unless otherwise specified

Values
min.

typ.

Unit
max.

Input
Off state input current

mA

IIN(off)

VOUT 0.1 V
Tj = 25 C, RL = 270

0.05

Tj = 150 C

0.04

0.3

On state input current ( Pin1 grounded ) 1)

IIN(on)

Input resistance

RI

0.5

2.5

IS

0.2

-VON

600

Reverse Battery
Continuous reverse drain current
TC = 25 C
Drain-source diode voltage (VOUT > Vbb)

mV

IF = 0.2 A, IIN 0,05 mA

1Driver circuit must be able to drive currents > 1mA.

Page 6

2004-01-27

BTS 4140 N
EMC-Characteristics
All EMC-Characteristics are based on limited number of sampels and no part of production test.
Test Conditions:
If not other specified the test circuitry is the minimal functional configuration without any external
components for protection or filtering.
Supply voltage:

Vbb = 13.5V

Load:

RL = 220

Operation mode:

PWM
DC On/Off
-

DUT-Specific.:

Temperature:

Ta = 23 5C ;

Frequency:

100Hz / Duty Cycle:

50%

Fast electrical transients

Acc. ISO 7637
Test Pulse

Test Level

1
2
3a
3b
41)
5

-200 V
+200 V
-200 V
+ 200 V
-7 V
175 V

Test Results
On
Off

C
C
C
C
C

C
C
C
C
C

E (150V )

E (150V )

Pulse Cycle Time and

Generator Impedance
500ms ; 10
500ms ; 10
100ms ; 50
100ms ; 50
0,01
400ms ; 2

The test pulses are applied at Vbb

Definition of functional status

Class
C
E

Content
All functions of the device are performed as designed after exposure to disturbance.
One or more function of a device does not perform as designed after exposure
and can not be returned to proper operation without repairing or replacing the
device. The value after the character shows the limit.

Test circuit:
Pulse
Bat.

Vbb
PROFET

OUT

IN

RL

1Supply voltage V = 12 V instead of 13,5 V.

bb
Page 7

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BTS 4140 N
Conducted Emission
Acc. IEC 61967-4 (1 / 150 method)
Typ. Vbb-Pin Emission at DC-On with 150 -matching network
100
90
N o is e
Vbb D C

80
70
60

dBV

50

1 5 0 / 8 -H

40
30
20

1 5 0 / 1 3 -N

10
0
-1 0
-2 0
0 ,1

10

100

1000

f / MHz

Typ. Vbb -Pin Emission at PWM-Mode with 150 -matching network

100
90
N o is e
Vbb PW M

80
70
60

dBV

50

1 5 0 / 8 -H

40
30
20

1 5 0 / 1 3 -N

10
0
-1 0
-2 0
0 ,1

10

100

1000

f / MHz

Test circuit:
5H

150-Network

Vbb
PROFET
IN

BSS100

OUT

5H

For defined decoupling and high reproducibility a defined choke (5H at 1 MHz)
is inserted between supply and Vbb-pin.
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BTS 4140 N
Conducted Susceptibility
Acc. 47A/658/CD IEC 62132-4 (Direct Power Injection)
Direct Power Injection:
Failure criteria:

Forward Power CW
Amplitude and frequency deviation max. 10% at Out

Typ. Vbb-Pin Susceptibility at DC-On/Off

40
35
30

dBm

25
20
15

D e v ic e :
D a te C o d e :
Load:
O -M o d e :
C o u p lin g P o in t :
M o n it o r in g :
M o d u la t io n :
M e a s u re m e n t:

L im it
ON
OFF

10
5

BTS 4140
E0150
220 O hm
O N / O FF
VBB
O ut
CW
P fw d

0
1

10

100

1000

f / MHz

Typ. Vbb -Pin Susceptibility at PWM-Mode

40
35
30

dBm

25
20
15

D e v ic e :
D a te C o d e :
Load:
O -M o d e :
C o u p lin g P o in t :
M o n it o r in g :
M o d u la t io n :
M e a s u re m e n t:

L im it
PW M

10
5

BTS 4140
E0150
220 O hm
PW M 100 H z 50%
VBB
O ut
CW
P fw d

0
1

10

100

1000

f / MHz

Test circuit:
HF

5H

Vbb

150

PROFET
IN

6,8nF

OUT

5H

RL
BSS100

150

6,8nF

For defined decoupling and high reproducibility the same choke and the same
150 -matching network as for the emission measurement is used.
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BTS 4140 N
Terms

Inductive and overvoltage output clamp

+ Vbb

Ibb

V
Vbb
V

IL

PROFET

bb

VON

ON

OUT

OUT

IN

IN

V OUT

I IN

VON clamped to 60 V min.

Input circuit (ESD protection)

Overvoltage protection of logic part

+ Vbb

+ Vbb

ESD
Control.
Circuit
R

Z2

Logic

IN

R IN

IN

Reverse battery protection

Signal GND

- Vbb

Vbb,AZ = V Z2 + Ibb * RIN = 62V min.

OUT

Logic
RIN

Power
Inverse
Diode

IN
RL
Signal GND

Power GND

R I=1k typ., Temperature protection

is not active during inverse current.

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BTS 4140 N

Vbb disconnect with charged inductive

load

Inductive Load switch-off energy

dissipation
E bb
E AS
ELoad

Vbb

Vb b

PROFET

PR O FET

OUT

OUT
L

=
IN

ZL

IN
I IN

bb

EL

ER

R
L

Energy stored in load inductance: EL = * L * IL2

While demagnetizing load inductance,
the enrgy dissipated in PROFET is
E AS = E bb + EL - ER = VON(CL) * iL(t) dt,
with an approximate solution for RL > 0:

E AS =

Page 11

IL * R L
IL * L
)
* ( V b b + | V O U T ( C L )| ) * ln (1 +
| V O U T ( C L )|
2 * RL

2004-01-27

BTS 4140 N
Typ. transient thermal impedance

Typ. transient thermal impedance

ZthJA=f(tp) @ 6cm 2 heatsink area

Z thJA=f(tp) @ min. footprint

Parameter: D=tp/T

Parameter: D=tp/T

10

10 2

K/W

10 1

Z thJA

ZthJA

K/W

D=0.5
D=0.2
D=0.1
D=0.05
D=0.02
D=0.01
D=0

10 0

10 -1 -5
-4
-3
-2
-1
0
1
2
10 10 10 10 10 10 10 10

10 1

D=0.5
D=0.2
D=0.1
D=0.05
D=0.02
D=0.01
D=0

10 0

10

10 -1 -5
-4
-3
-2
-1
0
1
2
10 10 10 10 10 10 10 10

tp

10

tp

Typ. on-state resistance

Typ. on-state resistance

RON = f(Tj) ; Vbb = 9V ; Pin1 grounded;

RON = f(V bb); IL = 150mA ; Pin1 grounded

IL=150mA
1.6

RON

RON

1.2

2
150C

0.8

1.5

0.6
1

25C

0.4

-40C

0.5
0.2

0
-40 -20

20

40

60

80 100 120

C
Tj

0
0

160

Page 12

10

15

20

25

30

35

40

V
Vbb

50

2004-01-27

BTS 4140 N
Typ. turn on time

Typ. turn off time

ton = f(Tj ); R L = 270

toff = f(Tj); RL = 270

80

80

s
9V

60

60
9...42V

toff

ton

13.5V

50
42V

50

40

40

30

30

20

20

10

10

0
-40 -20

20

40

60

80 100 120

C
Tj

0
-40 -20

160

20

40

60

80 100 120

Typ. slew rate on

Typ. slew rate off

dV/dton = f(Tj ) ; RL = 270

dV/dtoff = f(Tj); RL = 270

C
Tj

160

V/s
5

-dV
dtoff

dV
dton

V/s

4.5
4
3.5

42V

1.5

3
2.5
42V

2
13.5V

13,5V

9V

0.5

1.5
1
0.5

0
-40 -20

20

40

60

80 100 120

C
Tj

0
-40 -20

160

Page 13

9V

20

40

60

80 100 120

C
Tj

160

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BTS 4140 N
Typ. initial peak short circuit current limit

Typ. initial short circuit shutdown time

IL(SCp) = f(Tj) ; Vbb = 13,5 V; tm = 100 s

toff(SC) = f(Tj,start)
10 3

ms
A

t off(SC)

I L(SCp)

10 2

0.6

10 1
0.4

10 0

13,5V

0.2

24V
42V

0
-40 -20

20

40

60

80 100 120

C
Tj

10 -1
-40 -20

160

20

40

60

80 100 120

C
Tj

Typ. initial peak short circuit current limit

Typ. current limitation characteristic:

IL(SCp) = f(Vbb); tm = 100 s

IL(SC) = f(VON ), Vbb = 13,5V

1

1.2

-40C

25C

I L(SC)

I L(SCp)

160

0.8
150C

0.6

0.6
0.4
0.4

0.2

0.2

0
0

10

15

20

25

30

35

40

V
Vbb

0
0

50

12

16

24

V
VON

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BTS 4140 N
Typ. standby current

Maximum allowable inductive switch-off

Ibb(off) = f(Tj ) ; Pin1 open

energy, single pulse

EAS = f(I L); T jstart = 150C

2.2

J
60V

1.6
4

EAS

Ibb(off)

1.8

1.4
1.2

3
1
0.8

42V
13.5V

0.6
0.4
0.2

0
-40 -20

20

40

60

80 100 120

C
Tj

0
50

160

Page 15

75

100

125

150

175

mA
IL

225

2004-01-27

BTS 4140 N

Timing diagrams
Figure 1a: Vbb turn on:

Figure 2b: Switching a lamp

I IN

I IN

Vbb

VOUT

IL

Figure 2a: Switching a resistive load,

turn-on/off time and slew rate definition

Figure 2c: Switching an inductive load

I IN

I IN

V OUT

VOUT

90%
t on
d V /d to n
10%

d V / d to ff

o ff

IL

IL

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BTS 4140 N

Figure 3a: Turn on into short circuit,

shut down by overtemperature, restart by cooling

Figure 3b: Short circuit in on-state

shut down by overtemperature, restart by cooling

I IN

I IN

V OUT

V OUT
O utput short to G N D

L(S C p)

normal
operation

L(S C r)

tm

Output short to GND

L(SCr)

t off(S C )

Heating up of the chip may require several milliseconds, depending

on external conditions.

Figure 4: Overtemperature:
Reset if Tj < Tjt

I IN

VOUT

TJ

Page 17

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BTS 4140 N

Package and ordering code

all dimensions in mm

Sales code

BTS 4140 N

Ordering code,

Q67060-S6084-A101
1.6 0.1

6.5 0.2

+0.2
acc. to
DIN 6784

3.50.2

7 0.3

15 max

0.1 max

3 0.1

0.5 min

0.28 0.04

2.3

0.7 0.1
4.6
0.25

0.25

B
GPS05560

Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81669 Mnchen
Infineon Technologies AG 2001
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee
of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your
nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide
(see address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the
types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.

Page 18

2004-01-27

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