FDA59N30-348162 (Transistor For Ups)

FDA59N30
N-Channel UniFETTM MOSFET

300 V, 59 A, 56 m
Features
Description
RDS(on) = 47 m (Typ.) @ VGS = 10 V, ID = 29.5 A
UniFETTM MOSFET is Fairchild Semiconductors high voltage

MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
Low Gate Charge (Typ. 77 nC)

Low Crss (Typ. 80 pF)
100% Avalanche Tested
Applications
PDP TV
Uninterruptible Power Supply
AC-DC Power Supply
G
G
TO-3PN
Absolute Maximum Ratings

Symbol
TC = 25C unless otherwise noted.

Parameter
VDSS
Drain-Source Voltage
ID
Drain Current
- Continuous (TC = 25C)

- Continuous (TC = 100C)
IDM
Drain Current
- Pulsed
VGSS
Gate-Source voltage
(Note 1)
FDA59N30
Unit
300
59
35
A
A
236
30
1734
mJ
59
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
EAR
Repetitive Avalanche Energy
(Note 1)
50
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation
500
4
W
W/C
-55 to +150
300
FDA59N30
Unit
(TC = 25C)
- Derate Above 25C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds
Thermal Characteristics
Symbol
Parameter
RJC
Thermal Resistance, Junction-to-Case, Max.
RJA
Thermal Resistance, Junction-to-Ambient, Max.
2005 Fairchild Semiconductor Corporation

FDA59N30 Rev. C2
0.25
40
1
C/W
www.fairchildsemi.com
FDA59N30 N-Channel UniFETTM MOSFET
May 2014
Part Number
Top Mark
FDA59N30
FDA59N30
Electrical Characteristics
Symbol
Package
TO-3PN
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30 units
TC = 25C unless otherwise noted.
Parameter
Conditions
Min.
Typ.
Max.
Unit
300
--
--
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 A
BVDSS
/ TJ
Breakdown Voltage Temperature

Coefficient
ID = 250 A, Referenced to 25C
--
0.3
--
V/C
IDSS
Zero Gate Voltage Drain Current
VDS = 300 V, VGS = 0 V

VDS = 240 V, TC = 125C
---
---
1
10
A
A
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 A
3.0
--
5.0
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 29.5 A
--
0.047
0.056
gFS
Forward Transconductance
VDS = 40 V, ID = 29.5 A
--
52
--
VDS = 25 V, VGS = 0 V,
f = 1 MHz
--
3590
4670
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
--
710
920
pF
--
80
120
pF
--
140
290
ns
--
575
1160
ns
--
120
250
ns
--
200
410
ns
--
77
100
nC
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 150 V, ID = 59 A,
VGS = 10 V, RG = 25
(Note 4)
VDS = 240 V, ID = 59 A,
VGS = 10 V
(Note 4)
--
22
--
nC
--
40
--
nC
Drain-Source Diode Characteristics and Maximum Ratings

IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
59
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
236
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 59 A
--
--
1.4
trr
Reverse Recovery Time
246
--
ns
Reverse Recovery Charge
VGS = 0 V, IS = 59 A,
dIF/dt =100 A/s
--
Qrr
--
6.9
--
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 0.83 mH, IAS = 59 A, VDD = 50 V, RG = 25 , starting TJ = 25C.
3. ISD 59 A, di/dt 200 A/s, VDD BVDSS, starting TJ = 25C.
4. Essentially independent of operating temperature typical characteristics.

FDA59N30 Rev. C2
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Top :
ID, Drain Current [A]
10
10
10
150 C
1
10
25 C
o
-55 C
Notes :
1. VDS = 40V
2. 250 s Pulse Test
Notes :
1. 250 s Pulse Test
2. TC = 25
0
10
-1
10
10
10
10
VDS, Drain-Source Voltage [V]
10
12
VGS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage

Variation vs. Source Current
and Temperatue
0.12
IDR, Reverse Drain Current [A]
RDS(ON) [ ],
Drain-Source On-Resistance
0.11
0.10
0.09
VGS = 10V
0.08
0.07
VGS = 20V
0.06
0.05
0.04
Note : TJ = 25
10
150
10
25
Notes :
1. VGS = 0V
2. 250 s Pulse Test
0
25
50
75
100
125
150
10
175
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics

12
9000
VGS, Gate-Source Voltage [V]
Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd
Crss = Cgd
Capacitances [pF]
Coss
6000
Ciss
3000
Note ;
1. VGS = 0 V
2. f = 1 MHz
Crss
VDS = 60V
10
VDS = 150V
VDS = 240V
2
Note : ID = 59A
0
-1
10
10
10

FDA59N30 Rev. C2
10
20
30
40
50
60
70
80
QG, Total Gate Charge [nC]
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation

vs. Temperature
Figure 8. On-Resistance Variation

vs. Temperature
3.0
1.1
1.0
Notes :
1. VGS = 0 V
2. ID = 250 A
0.9
0.8
-100
-50
50
100
2.5
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
150
2.0
1.5
1.0
Notes :
1. VGS = 10 V
2. ID = 29.5 A
0.5
0.0
-100
200
-50
50
100
TJ, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
70
10 s
100 s
10
DC
10
60
1 ms
10 ms
100 ms
200
Figure 10. Maximum Drain Current

vs. Case Temperature
10
Operation in This Area

is Limited by R DS(on)
0
10
Notes :
o
50
40
30
20
1. TC = 25 C
-1
10
2. TJ = 150 C
3. Single Pulse
10
-2
10
150
TJ, Junction Temperature [ C]
10
0
25
10
10
50
75
100
125
150
TC, Case Temperature []
Z JC(t), Thermal Response
ZJC(t), Thermal Response [oC/W]
Figure 11. Transient Thermal Response Curve
10
D =0.5
-1
0.2
0.1
N otes :
1. Z JC(t) = 0.25 /W M ax.
2. D uty F actor, D =t 1 /t 2
3. T JM - T C = P DM * Z JC(t)
0.05
10
0.02
-2
0.01
PDM
single pulse
10
-5
10
-4
t1
10
-3
10
-2
10
t2
-1
10
10
t 1 , Square W ave Pulse D uration [sec]

FDA59N30 Rev. C2
Typical Performance Characteristics (Continued)
50K
200nF
12V
VGS
Same Type
as DUT
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
IG = const.
3mA
Charge
Figure 12. Gate Charge Test Circuit & Waveform
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
V
10V
GS
10%
td(on)
tr
td(off)
t on
tf
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
V
10V
GS
GS
VDD
ID (t)
VDS (t)
VDD
DUT
tp
tp
Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms

FDA59N30 Rev. C2
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
dv/dt controlled by RG
ISD controlled by pulse period
Gate Pulse Width

D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

FDA59N30 Rev. C2
Mechanical Dimensions
Figure 16. TO3PN, 3-Lead, Plastic, EIAJ SC-65

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchilds worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductors online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT3PN-003

FDA59N30 Rev. C2
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER
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As used here in:
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and (c) whose failure to perform when properly used in accordance with
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2.
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Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications

may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later

date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild

Semiconductor. The datasheet is for reference information only.
Rev. I68

FDA59N30 Rev. C2
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FDA59N30

N-Channel UniFETTM MOSFET

RDS(on) = 47 m (Typ.) @ VGS = 10 V, ID = 29.5 A

UniFETTM MOSFET is Fairchild Semiconductors high voltage

Low Gate Charge (Typ. 77 nC)

Absolute Maximum Ratings

TC = 25C unless otherwise noted.

- Continuous (TC = 25C)

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating and Storage Temperature Range

Thermal Resistance, Junction-to-Case, Max.

Thermal Resistance, Junction-to-Ambient, Max.

2005 Fairchild Semiconductor Corporation

FDA59N30 N-Channel UniFETTM MOSFET

TC = 25C unless otherwise noted.

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature

ID = 250 A, Referenced to 25C

Zero Gate Voltage Drain Current

VDS = 300 V, VGS = 0 V

Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

VGS = -30 V, VDS = 0 V

Gate Threshold Voltage

VDS = VGS, ID = 250 A

Reverse Transfer Capacitance

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Drain-Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain-Source Diode Forward Current

Maximum Pulsed Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

2005 Fairchild Semiconductor Corporation

FDA59N30 N-Channel UniFETTM MOSFET

Package Marking and Ordering Information

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

ID, Drain Current [A]

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

VGS, Gate-Source Voltage [V]

Figure 3. On-Resistance Variation vs.

Figure 4. Body Diode Forward Voltage

IDR, Reverse Drain Current [A]

ID, Drain Current [A]

VSD, Source-Drain voltage [V]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

VGS, Gate-Source Voltage [V]

Ciss = Cgs + Cgd (Cds = shorted)

2005 Fairchild Semiconductor Corporation

QG, Total Gate Charge [nC]

VDS, Drain-Source Voltage [V]

FDA59N30 N-Channel UniFETTM MOSFET

Typical Performance Characteristics

Figure 7. Breakdown Voltage Variation