AOL1414

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOL1414 uses advanced trench technology to

provide excellent RDS(ON), low gate chargeand low
gate resistance. This device is ideally suited for use
as a high side switch in CPU core power conversion.

VDS (V) = 30V

ID = 85A (VGS = 10V)
RDS(ON) < 6.5m (VGS = 10V)
RDS(ON) < 7.5m (VGS = 4.5V)

-RoHS Compliant
-Halogen and Antimony Free Green Device*

UIS Tested
Rg,Ciss,Coss,Crss Tested

Ultra SO-8TM Top View

D

Bottom tab
connected to
drain

G
S

S
G
Absolute Maximum Ratings TA=25C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage

VGS
TC=25C

Continuous Drain
Current B
Pulsed Drain Current

Avalanche Current C
C

Repetitive avalanche energy L=0.3mH

TC=25C

70

IDM

200

Junction and Storage Temperature Range

Maximum Junction-to-Case

11

IAR

30

EAR

135

mJ

100
2.08
-55 to 175

Symbol

Alpha & Omega Semiconductor, Ltd.

1.3

TJ, TSTG

t 10s
Steady-State
Steady-State

50

PDSM

TA=70C

Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A

IDSM

PD

TC=100C
TA=25C

Power Dissipation

14

TA=70C

12

ID

TA=25C

Power Dissipation B

Units
V

85

TC=100C

Continuous Drain
Current G

Maximum
30

RJA
RJC

Typ
14.4
37
1

Max
25
60
1.5

Units
C/W
C/W
C/W

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AOL1414

Electrical Characteristics (TJ=25C unless otherwise noted)

Symbol

Parameter

STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS

Zero Gate Voltage Drain Current

Conditions

Min

ID=250A, VGS=0V

Typ

V
1

TJ=55C

IGSS

Gate-Body leakage current

VDS=0V, VGS= 12V

Gate Threshold Voltage

VDS=VGS ID=250A

ID(ON)

On state drain current

VGS=10V, VDS=5V

100

100

VGS=10V, ID=20A

1.5

6.5

6.9

8.3
7.5

VGS=4.5V, ID=20A

gFS

Forward Transconductance

VDS=5V, ID=20A

90

VSD

Diode Forward Voltage

IS=1A,VGS=0V

IS

Maximum Body-Diode Continuous Current

0.74

DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss

Reverse Transfer Capacitance

Rg

Gate resistance

2100
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz

SWITCHING PARAMETERS
Qg(4.5V) Total Gate Charge
VGS=4.5V, VDS=15V, ID=20A

m
m
S

85

2520

536
0.5

nA

4.9

Static Drain-Source On-Resistance

TJ=125C

RDS(ON)

Output Capacitance

Units

30

VDS=30V, VGS=0V

VGS(th)

Coss

Max

pF
pF

165

231

pF

0.95

1.5

19.7

24

nC

3.6

4.6

nC

Qgs

Gate Source Charge

Qgd

Gate Drain Charge

7.9

tD(on)

Turn-On DelayTime

5.9

10

ns

tr

Turn-On Rise Time

11

17

ns

tD(off)

Turn-Off DelayTime

36.2

55

ns

tf

Turn-Off Fall Time

12

18

ns
ns
nC

VGS=10V, VDS=15V, RL=0.75,

RGEN=3

nC

trr

Body Diode Reverse Recovery Time

IF=20A, dI/dt=100A/s

35

42

Qrr

Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/s

33

50

A: The value of RJA is measured with the device in a still air environment with T A =25C.
B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C.
D. The RJA is the sum of the thermal impedence from junction to case RJC and case to ambient.
TC=25C
Continuous
Drain Current
E.
The static characteristics
in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max.
C
F. These curves are basedTon
the junction-to-case
thermal impedence which is measured with the device mounted to a large heatsink,
C=100
assuming a maximum junction temperature of TJ(MAX)=175C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The
SOA curve provides a single pulse rating.
* This device is guaranteed green after date code 8P11 (June 1ST 2008)
Rev 5: May 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Alpha & Omega Semiconductor, Ltd.

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AOL1414

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

60

60
10V
3.5V

50

50

VDS=5V

3V
40

40
ID(A)

ID (A)

125C
30

30

20

25C

20
VGS=2.5V

10

10

0
0

2
3
4
VDS (Volts)
Fig 1: On-Region Characteristics

1.5

2
2.5
3
VGS(Volts)
Figure 2: Transfer Characteristics

3.5

1.8
ID=20A
Normalized On-Resistance

6.5
VGS=4.5V
RDS(ON) (m )

VGS=10V

1.6

1.4

5.5
5

VGS=4.5V

1.2

VGS=10V

4.5
4

0.8
0

10

20

30

40

50

60

ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage

50

75

100

125

150

175

Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature

Continuous
Drain Current
TC=25C
20

1.0E+02

TC=100C

1.0E+01

16

125C

1.0E+00
IS (A)

ID=20A
RDS(ON) (m )

25

12

1.0E-01
25C
1.0E-02

125C

1.0E-03

8
25C

1.0E-04
1.0E-05

4
2

10

VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

0.0

0.2

0.4

0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics

1.2

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

3500

5
VDS=15V
ID=20A

3000
Capacitance (pF)

VGS (Volts)

3
2

2500
Ciss
2000
1500
Coss

1000

1
Crss

500
0

0
0

10

15

20

25

Qg (nC)
Figure 7: Gate-Charge Characteristics

1000

10

15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics

30

250
10s

RDS(ON)
limited

1ms

100s

DC

10
TJ(Max)=175C
TC=25C

TJ(Max)=175C
TC=25C

210
Power (W)

100
ID (Amps)

170
130
90
50

0.1

0.0001
0.1

10

100

VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)

0.001

0.01

0.1

10

100

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-toCase (Note F)

Continuous Drain Current

TC=25C

Z JC
Normalized Transient
Thermal Resistance

10

T =100C

C
D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
RJC=1.5C/W

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

PD

0.1

Ton
Single Pulse

0.01
0.00001

0.0001

0.001

0.01

0.1

10

100

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Alpha & Omega Semiconductor, Ltd.

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AOL1414

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

120
TA=25C
80

Power Dissipation (W)

ID(A), Peak Avalanche Current

100

60
40
20
0

90

60

30

0.00001

0.0001

0.001

0.01

25

50

75

100

125

150

175

TCASE (C)
Figure 13: Power De-rating (Note B)

100

100

80

80
Power (W)

Current rating ID(A)

Time in avalanche, tA (s)

Figure 12: Single Pulse Avalanche capability

60

40

60
40

20

20

0
0

25

50

75

100

125

150

0.01

175

TCASE (C)
Figure 14: Current De-rating (Note B)

0.1

10

100

1000

10000

Pulse Width (s)

Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)

Continuous Drain Current

TC=25C

Z JA Normalized Transient
Thermal Resistance

10

D=TonT/T
C=100C
TJ,PK=TA+PDM.ZJA.RJA
RJA=60C/W

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1

0.01

PD

0.001

Ton
T

Single Pulse
0.0001
0.0001

0.001

0.01

0.1

10

100

1000

Pulse Width (s)

Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

Alpha & Omega Semiconductor, Ltd.

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AOL1414

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V

+
+ Vds

VDC

Qgs

Qgd

VDC

DUT

Vgs
Ig
Charge

Res istive Switching Test Circuit & Waveforms

RL
Vds
Vds

DUT

Vgs

90%

+ Vdd

VDC

Rg

10%

Vgs

Vgs

t d(on)

tr

t d(off)

t on

tf
t off

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L
EAR= 1/2 LI

Vds

2
AR

BVDSS

Vds

Id

+ Vdd

Vgs

Vgs

I AR

VDC

Rg

Id

DUT
Vgs

Vgs

Diode Recovery Tes t Circuit & Waveforms

Qrr = - Idt

Vds +
DUT
Vgs

Vds -

Isd

Vgs
Ig

Alpha & Omega Semiconductor, Ltd.

Isd

+
VDC

IF

trr

dI/dt
IRM

Vdd

Vdd
Vds

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