SUP/SUB60N06-18

Vishay Siliconix

N-Channel 60-V (D-S), 175C MOSFET


  
V(BR)DSS (V)

rDS(on) (
)

ID (A)

60

0.018

60

TO-220AB
D

TO-263

DRAIN connected to TAB

G D S

D S

Top View
Top View

S
SUB60N06-18

SUP60N06-18

N-Channel MOSFET

         


Symbol

Limit

Drain-Source Voltage

Parameter

VDS

60

Gate-Source Voltage

VGS

20

TC = 25C

Continuous Drain Current (TJ = 175C)

TC = 100C

L = 0.1 mH

120

IAR

60

EAR

180

mJ

120b

TC = 25C (TO-220AB and TO-263)

PD

TA = 25C (TO-263)c

Operating Junction and Storage Temperature Range

39
A

IDM

Avalanche Current

Power Dissipation

60
ID

Pulsed Drain Current

Repetitive Avalanche Energya

Unit

W
3.7

TJ, Tstg

55 to 175

C

Symbol

Limit

Unit

    

Parameter
PCB Mount (TO-263)c
Junction to Ambient
Junction-to-Ambient
Free Air (TO-220AB)
Junction-to-Case

40
RthJA
hJA
RthJC

62.5

C/W

1.25

Notes:
a. Duty cycle  1%.
b. See SOA curve for voltage derating.
c. When mounted on 1 square PCB (FR-4 material).
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70290
S57253Rev. D, 24-Feb-98

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SUP/SUB60N06-18
Vishay Siliconix

       
 
 



Parameter

Symbol

Test Condition

Min

Typ

Max

V(BR)DSS

VGS = 0 V, ID = 250 mA

60

VGS(th)

VDS = VGS, IDS = 1 mA

2.0

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

VDS = 60 V, VGS = 0 V

Zero
Gate
Voltage
Drain
Z
G
V l
D i Current
C

IDSS

VDS = 60 V, VGS = 0 V, TJ = 125C

50

On-State Drain Currenta

ID(on)

VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 30 A

0.014

0.018

rDS(on)

VGS = 10 V, ID = 30 A, TJ = 125C

0.024

0.030

VGS = 10 V, ID = 30 A, TJ = 175C

0.031

0.036

VDS = 15 V, ID = 30 A

49

Unit

Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage

V
4.0
"100

VDS = 60 V, VGS = 0 V, TJ = 175C

a
D i S
Drain-Source
On-State
O S
Resistance
R i

Forward Transconductancea

gfs

nA

mA
A

150
60

Dynamicb
Input Capacitance

Ciss

2000

Output Capacitance

Coss

Reversen Transfer Capacitance

Crss

115

Total Gate Chargec

Qg

39

VGS = 0 V,
V VDS = 25 V
V, f = 1 MH
MHz

pF
F

400

60

Gate-Source Chargec

Qgs

Gate-Drain Chargec

Qgd

10

Turn-On Delay Timec

td(on)

12

30

Rise

Timec

Turn-Off Delay Timec

Fall Timec

VDS = 30 V
V, VGS = 10 V,
V ID = 60 A

tr

VDD = 30 V,, RL = 0.5 W

11

30

td(off)

ID ] 60 A, VGEN = 10 V, RG = 2.5 W

25

50

15

30

tf

Source-Drain Diode Ratings and Characteristics (TC =

Continuous Current

nC
C

12

ns

25C)b

Is

60

Pulsed Current

ISM

120

Forward Voltagea

VSD

Reverse Recovery Time

Peak Reverse Recovery Current
Reverse Recovery Charge

A
IF = 60 A, VGS = 0 V

trr
IRM(REC)
Qrr

1.6
60

IF = 60 A,
A di/dt
di/d = 100 A/ms
A/

V
ns

6.0

0.4

mC

Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.

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Document Number: 70290

S57253Rev. D, 24-Feb-98

SUP/SUB60N06-18
Vishay Siliconix
 
       
Output Characteristics

Transfer Characteristics

100

100
VGS = 10, 9, 8, 7 V

80
I D Drain Current (A)

I D Drain Current (A)

75
6V
50

25

5V

60

40
TC = 125C
20
25C

4V

55C

0
0

10

VDS Drain-to-Source Voltage (V)

Transconductance

10

0.020
TC = 55C

60

r DS(on) On-Resistance ( )

25C

50
125C
40
30
20
10
0

0.016

VGS = 10 V

0.012

0.008

0.004

0
0

10

20

30

40

50

20

40

VGS Gate-to-Source Voltage (V)

60

80

100

ID Drain Current (A)

Capacitance

Gate Charge
10

3000

V GS Gate-to-Source Voltage (V)

2500
Ciss
C Capacitance (pF)

On-Resistance vs. Drain Current

70

g fs Transconductance (S)

VGS Gate-to-Source Voltage (V)

2000

1500

1000
Coss
Crss

500

VGS = 10 V
ID = 60 A

0
0

10

20

30

VDS Drain-to-Source Voltage (V)

Document Number: 70290

S57253Rev. D, 24-Feb-98

40

10

20

30

40

Qg Total Gate Charge (nC)

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On-Resistance vs. Junction Temperature

Source-Drain Diode Forward Voltage

2.4

100
VGS = 10 V
ID = 30 A
TJ = 150C

I S Source Current (A)

r DS(on) On-Resistance ( )
(Normalized)

2.0

1.6

1.2

0.8

TJ = 25C
10

0.4

0
50

1
25

25

50

75

100

125

150

175

0.3

TJ Junction Temperature (C)

0.6

0.9

1.2

1.5

VSD Source-to-Drain Voltage (V)

  

Maximum Avalanche and Drain Current
vs. Case Temperature

Safe Operating Area

200

70

10 ms

100
Limited
by rDS(on)

50

I D Drain Current (A)

I D Drain Current (A)

60

40
30
20

100 ms

10
1 ms

10 ms
1

100 ms
TC = 25C
Single Pulse

10
0
0

20

40

60

80

100

120

140

160

dc

0.1

180

0.1

TC Case Temperature (C)

10

100

VDS Drain-to-Source Voltage (V)

Normalized Thermal Transient Impedance, Junction-to-Case

2
1
Normalized Effective Transient
Thermal Impedance

Duty Cycle = 0.5

0.2

0.1

0.1

0.02

0.05

Single Pulse

0.01
105

104

103

102

101

Square Wave Pulse Duration (sec)

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2-4

Document Number: 70290

S57253Rev. D, 24-Feb-98