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MJL21193(PNP),

MJL21194(NPN)
Silicon Power Transistors
The MJL21193 and MJL21194 utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.

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Features

Total Harmonic Distortion Characterized


High DC Current Gain
Excellent Gain Linearity
High SOA
These Devices are PbFree and are RoHS Compliant*

16 AMPERE COMPLEMENTARY
SILICON POWER
TRANSISTORS
250 VOLTS, 200 WATTS
NPN

PNP

MAXIMUM RATINGS
Rating

COLLECTOR 2, 4
Symbol

Value

Unit

CollectorEmitter Voltage

VCEO

250

Vdc

CollectorBase Voltage

VCBO

400

Vdc

EmitterBase Voltage

VEBO

Vdc

CollectorEmitter Voltage 1.5 V

VCEX

400

Vdc

IC

16

Adc

ICM

30

Adc

Collector Current Continuous


Collector Current Peak (Note 1)
Base Current Continuous

IB

Adc

Total Power Dissipation @ TC = 25_C


Derate above 25_C

PD

200
1.43

W
W/_C

TJ, Tstg

65 to
+ 150

_C

Operating and Storage Junction


Temperature Range

Stresses exceeding Maximum Ratings may damage the device. Maximum


Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, JunctiontoCase

Symbol

Max

Unit

RqJC

0.7

_C/W

COLLECTOR 2, 4

1
BASE

1
BASE

EMITTER 3

EMITTER 3

MARKING DIAGRAM

MJL2119x
AYYWWG
2

TO264
CASE 340G
STYLE 2
x
A
YY
WW
G

3
1
EMITTER
BASE
2 COLLECTOR
= 3 or 4
= Assembly Location
= Year
= Work Week
= PbFree Package

ORDERING INFORMATION
Package

Shipping

MJL21193G

TO264
(PbFree)

25 Units / Rail

MJL21194G

TO264
(PbFree)

25 Units / Rail

Device

*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2013

September, 2013 Rev. 7

For information on tape and reel specifications,


including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MJL21193/D

MJL21193 (PNP), MJL21194 (NPN)


ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic

Symbol

Min

Typ

Max

Unit

VCEO(sus)

250

Vdc

Collector Cutoff Current


(VCE = 200 Vdc, IB = 0)

ICEO

100

mAdc

Emitter Cutoff Current


(VCE = 5 Vdc, IC = 0)

IEBO

100

mAdc

Collector Cutoff Current


(VCE = 250 Vdc, VBE(off) = 1.5 Vdc)

ICEX

100

mAdc

4.0
2.25

25
8

75

2.2

1.4
4

OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)

SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (nonrepetitive)
(VCE = 80 Vdc, t = 1 s (nonrepetitive)

IS/b

Adc

ON CHARACTERISTICS
DC Current Gain
(IC = 8 Adc, VCE = 5 Vdc)
(IC = 16 Adc, IB = 5 Adc)

hFE

BaseEmitter On Voltage
(IC = 8 Adc, VCE = 5 Vdc)

VBE(on)

CollectorEmitter Saturation Voltage


(IC = 8 Adc, IB = 0.8 Adc)
(IC = 16 Adc, IB = 3.2 Adc)

VCE(sat)

Vdc
Vdc

DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output
VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS
(Matched pair hFE = 50 @ 5 A/5 V)

THD

hFE
unmatched
hFE
matched

Current Gain Bandwidth Product


(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)

0.8

0.08

fT

MHz

Cob

500

pF

NPN MJL21194
f,
T CURRENT GAIN BANDWIDTH PRODUCT (MHz)

f,
T CURRENT GAIN BANDWIDTH PRODUCT (MHz)

PNP MJL21193
6.5
6.0

VCE = 10 V

5.5
5V
5.0
4.5
4.0
3.5
3.0
0.1

TJ = 25C
ftest = 1 MHz
1.0

10

8.0
7.0
10 V

6.0
5.0
VCE = 5 V

4.0
3.0
2.0
1.0
0
0.1

IC COLLECTOR CURRENT (AMPS)

TJ = 25C
ftest = 1 MHz
1.0

10

IC COLLECTOR CURRENT (AMPS)

Figure 2. Typical Current Gain Bandwidth Product

Figure 1. Typical Current Gain Bandwidth Product

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2

MJL21193 (PNP), MJL21194 (NPN)


TYPICAL CHARACTERISTICS
PNP MJL21193

NPN MJL21194
1000

hFE , DC CURRENT GAIN

hFE , DC CURRENT GAIN

1000

TJ = 100C
25C

100

-25C

TJ = 100C
25C
100
-25C

VCE = 20 V
10
0.1

VCE = 20 V

1.0
10
IC COLLECTOR CURRENT (AMPS)

10
0.1

100

Figure 4. DC Current Gain, VCE = 20 V

PNP MJL21193

NPN MJL21194
1000

hFE , DC CURRENT GAIN

hFE , DC CURRENT GAIN

100

Figure 3. DC Current Gain, VCE = 20 V

1000

TJ = 100C
25C
100
-25C

TJ = 100C
25C
100
-25C

VCE = 5 V
10
0.1

VCE = 20 V

1.0
10
IC COLLECTOR CURRENT (AMPS)

10
0.1

100

1.0
10
IC COLLECTOR CURRENT (AMPS)

100

Figure 5. DC Current Gain, VCE = 5 V

Figure 6. DC Current Gain, VCE = 5 V

PNP MJL21193

NPN MJL21194
35

30
25
20

IB = 2 A

I C, COLLECTOR CURRENT (A)

1.5 A
I C, COLLECTOR CURRENT (A)

1.0
10
IC COLLECTOR CURRENT (AMPS)

1A

15

0.5 A

10
5.0

IB = 2 A

30

1.5 A
25
1A
20
0.5 A

15
10
5.0

TJ = 25C

TJ = 25C
0

0
0

5.0
10
15
20
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

25

Figure 7. Typical Output Characteristics

5.0
10
15
20
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 8. Typical Output Characteristics

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3

25

MJL21193 (PNP), MJL21194 (NPN)


TYPICAL CHARACTERISTICS
PNP MJL21193

NPN MJL21194

2.5

1.4
TJ = 25C
IC/IB = 10

SATURATION VOLTAGE (VOLTS)

SATURATION VOLTAGE (VOLTS)

3.0

2.0
1.5
1.0

VBE(sat)

0.5

1.2

TJ = 25C
IC/IB = 10

1.0
VBE(sat)

0.8
0.6
0.4
0.2

VCE(sat)

VCE(sat)
1.0
10
IC, COLLECTOR CURRENT (AMPS)

0
0.1

100

Figure 10. Typical Saturation Voltages

PNP MJL21193

NPN MJL21194

10
TJ = 25C

1.0

0.1
0.1

1.0
10
IC, COLLECTOR CURRENT (AMPS)

Figure 9. Typical Saturation Voltages

VBE(on) , BASE-EMITTER VOLTAGE (VOLTS)

VBE(on) , BASE-EMITTER VOLTAGE (VOLTS)

0
0.1

VCE = 20 V (SOLID)

VCE = 5 V (DASHED)

1.0

10

10
TJ = 25C

VCE = 20 V (SOLID)
1.0

0.1
0.1

100

100

VCE = 5 V (DASHED)

1.0

10

IC, COLLECTOR CURRENT (AMPS)

IC, COLLECTOR CURRENT (AMPS)

Figure 11. Typical BaseEmitter Voltage

Figure 12. Typical BaseEmitter Voltage

100

IC, COLLECTOR CURRENT (AMPS)

100

There are two limitations on the power handling ability of


a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate IC VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 13 is based on TJ(pk) = 150C; TC is variable depending on conditions. At high case temperatures,
thermal limitations will reduce the power than can be handled
to values less than the limitations imposed by second breakdown.

1 SEC
10

1.0

0.1
1.0

10

100

1000

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 13. Active Region Safe Operating Area

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4

MJL21193 (PNP), MJL21194 (NPN)


10000

10000
TC = 25C
C, CAPACITANCE (pF)

Cib

1000
Cob

100
0.1

Cib

1000

Cob

f(test) = 1 MHz)

f(test) = 1 MHz)
1.0

10

100
0.1

100

1.0

10

VR, REVERSE VOLTAGE (VOLTS)

VR, REVERSE VOLTAGE (VOLTS)

Figure 14. MJL21193 Typical Capacitance

Figure 15. MJL21194 Typical Capacitance

1.2
1.1
T , TOTAL HARMONIC
HD
DISTORTION (%)

C, CAPACITANCE (pF)

TC = 25C

1.0
0.9
0.8
0.7
0.6
10

100

1000

10000

100000

FREQUENCY (Hz)

Figure 16. Typical Total Harmonic Distortion

+50 V
AUDIO PRECISION
MODEL ONE PLUS
TOTAL HARMONIC
DISTORTION
ANALYZER

SOURCE
AMPLIFIER

50 W
DUT
0.5 W

0.5 W

DUT

-50 V

Figure 17. Total Harmonic Distortion Test Circuit

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5

8.0 W

100

MJL21193 (PNP), MJL21194 (NPN)


PACKAGE DIMENSIONS
TO3BPL (TO264)
CASE 340G02
ISSUE J
Q

T
0.25 (0.010)

T B

NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.

E
U

A
R

F 2 PL

J
H

G
D 3 PL
0.25 (0.010)

T B

DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
R
U
W

MILLIMETERS
MIN
MAX
28.0
29.0
19.3
20.3
4.7
5.3
0.93
1.48
1.9
2.1
2.2
2.4
5.45 BSC
2.6
3.0
0.43
0.78
17.6
18.8
11.2 REF
4.35 REF
2.2
2.6
3.1
3.5
2.25 REF
6.3 REF
2.8
3.2

INCHES
MIN
MAX
1.102
1.142
0.760
0.800
0.185
0.209
0.037
0.058
0.075
0.083
0.087
0.102
0.215 BSC
0.102
0.118
0.017
0.031
0.693
0.740
0.411 REF
0.172 REF
0.087
0.102
0.122
0.137
0.089 REF
0.248 REF
0.110
0.125

STYLE 2:
PIN 1. BASE
2. COLLECTOR
3. EMITTER

ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLCs product/patent coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
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PUBLICATION ORDERING INFORMATION


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For additional information, please contact your local
Sales Representative

MJL21193/D

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