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ANSWER KEY
1
2
(A)
(C)
11
12
(B)
96
Electronic Devices
3
(C)
13
2.3
8
(C)
n
i
.
o
c
.
a
i
d
o
n
.
w
7
(D)
9
(B)
10
(C)
Practice Paper-I
Electronic Devices
SOLUTIONS
SOL 1
ni =
SOL 2
1.
n
i
.
o
c
2.
MOSFET has lower switching speed owing to its very high input capacitance (at the
gate).
3.
Depletion mode PMOS with metal gate cannot be fabricated because every component of threshold voltage becomes negative for metal gate PMOS.
4.
SOL 3
SOL 4
R\r
m
1
and also n = Dn = 50
nmn + pmp
mp D p
1
ND mn
R1 =
1
0.2R1
ND mn + NA mp
NA = 250ND
R\
SOL 5
i
d
o
n
.
w
.
a
Ec - EFn = kT ln b NC l
ND
NC = 4.82 # 1015 b mn T l
m
3/2
= 4.82 # 1015 b 0.65 # 300 l
m
6mn = 0.65m, T = 300 K@
22
ND = 4.41 #7 10 = 4.41 # 1015
10
3
Phosphorous atoms/cm , EC - EFn = 77.38 eV
3/2
SOL 6
Practice Paper-I
Electronic Devices
SOL 7
n
i
.
o
c
I ^150h
I 0 ^150h e0.4/2 # 8.62 # 10
=
I ^25h
I 0 ^25h e0.4/2 # 8.62 # 10
-5
# ^150 + 273h
-5
# ^25 + 273h
= 580
.
a
SOL 9
i
d
.
w
o
n
min
Caget,. min = Cox .Cd min = 0.315 # 10-3 F/m2 = 31.5 nF/cm2
Cox + Cd min
SOL 10
Option (C) is correct.
The circuit is a buffer, But PMOS is passing 0 and NMOS is passing 1. Hence logic level
will be degraded by an amount equal to threshold voltage of corresponding MOSes
`
V1,out = 5 - VTn = 5 - 1 = 4V
V0,out = 0 + VTP = 0.1 = 1V
SOL 11
Practice Paper-I
Electronic Devices
Ic = IE a = gm Vin a
gm (overall) = Ic = gm a = 4 # 10-3 # 0.99
Vin
= 3.96 mA/V
SOL 12
a = 0.98 = 49
1 - a 1 - 0.98
= ^1 + b h ICBO
= 50 # 10 = 500 nA
= 0.98 + 0.98 # 1% = 0.9898
b =
ICEO
anew
0.9898 = 97.0392 - 97
1 - 0.9898
= ^b + 1h ICBO = 98 # 10 nA = 980 nA
bnew =
ICEO^new h
n
i
.
o
c
i
d
.
a
1036
= 0.933 V
2.25 # 1020
Since Nd 22 Na most of the depletion width is in the p-side,
At zero-bias,
1/2
XPS = <2eV0 F = 0.35 mm
qNa
2e ^V0 + VD h 1/2
XPD = =
G
qNa
V0 = 0.259 ln
.
w
o
n
&
SOL 14
^1012 - 0h
0 - 10-3
= 1.92 mA/cm2
SOL 15