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I. I NTRODUCTION
Formation of nanocavities with very high quality factor
(Q) utilizing photonic crystal (PC) double heterostructure
(DH) has been on the spotlight for the past decade. This
is because DH nanocavities can be easily incorporated into
planar photonic circuits and, unlike defect based cavities,
these types of cavities are relatively insensitive to fabrication
errors. Generally, DH nanocavities are formed by perturbing
the photonic crystal lattice in a strip like region within
which the resonant mode remains confined. Welna et al. has
demonstrated a DH cavity with improved disorder stability by
engineering the dispersion of a PC line-defect waveguide [1].
Mock et al. has demonstrated a DH cavity with two additional
airholes within the line defect [2]. We have demonstrated
a tunable nanocavity based on rectangular lattice that can
sustain both TE and TM mode [3]. Kuramochi et al. has
designed a DH cavity by localy modulating the width of a
line defect [4]. Recently, several ultrahigh Q nanocavities have
been demonstrated that take the idea of double heterostructure
one step further and employ several photonic crystals with
gradually perturbed lattice, forming a multiheterostructure.
Cheng et al. has demonstrated PC cavity in GaN bulk using
four successive heterostructure. Tanaka et al. has demonstrated
a PC cavity which uses many successive heterostructures
to confine the resonant mode as gently as possible, which
led to very high Q [5]. In such multiheterostructure (MHT)
nanocavities, the confinement along the line defect is carefully
controlled to ensure gentle confinement. However, along the
direction perpendicular to the waveguide, the confinement
remains abrupt.
The manuscript has been recieved on ...
Ashfaqul Anwar Siraji and M. Shah Alam are with the Department
of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology (BUET), Dhaka-1000, Bangladesh (e-mails: aasiraji100@yahoo.com; shalam@eee.buet.ac.bd)
(1)
(2)
(3)
TABLE I
C OMPARISON OF QUALITY FACTOR OF THE MHT
NANOCAVITY WITH
PREVIOUSLY REPORTED VALUES .
(a)
Reference
Material
Si
GaN
Si
BaT iO3
Si
396
550
3.37 105
2800
9 104
(b)
a0 fcut (0)
2
2
.154B a0 (2n + 12 )2
,
.705B 4 a40 (2n + 12 )4
(4)
which produces the lattice constant of the nth PC away from
the center. In eq. (4), the constant B is arbitrary. We select a
value for B such that the variation in lattice constant remains
within 4% of a0 , so that our assumption of small n remains
true.
We designed a MHT nanocavity using eq. (4) and calculated
its resonant properties using 2D FDTD with fast fourier
transform (FFT). By gradually changing the lattice constant,
the bandgap of the PC is gradually changed so that the guided
mode in the central PC of the MHT falls within the bandgap of
the successive outer PCs. The normalized impulse response of
the MHT nanocavity for TE mode is shown in Fig. 2(b). It can
be seen that the resonant peak (r ) is at a = 0.24, which is
very close to the fcut (0) = 0.2257( ac ) predicted earlier. In the
inset of Fig. 2(b), we show the decay of energy in the cavity
with respect to time when excited at the resonant frequency.
From this, we calculate the Q to be 9 104 using the method
we used earlier [3]. The resonant TE mode of the MHT, as
shown in Fig. 2(a), is much more gently confined compared
to a double heterostructure cavity. This is confirmed by the
momentum space profile of the magnetic field, which is very
sharply confined, as shown in Fig. 2(c). The quality factor
of this MHT nanocavity compares favourably with previous
literature as shown in Tbale I. The eq. (4) is designed to
produce a MHT nanocavity that has a Gaussian envelope
along the waveguide. In our designed cavity, the waveguide
is along the x axis. The magnetic field profiles of the resonant
fcut (0) +
(a)
(b)
(c)
(d)
Fig. 2. (a) The structure of the designed MHT nanocavity. The resonant TE
mode is shown superimposed on the structure.(b) The normalized impulse
response of the MHT cavity. The decay of energy with respect to time in the
cavity when excited by the resonant frequency is shown ni the inset. (c) The
momentum space profile of the magnetic field. (d) The magnetic field of the
resonant mode along the x and z axes along with corresponding least error
fit. The rms error of fit is shown with respect to n in the inset.
RMS
ERROR IN
TABLE II
F ITTING THE MAGNETIC
AXIS
n+1
0
1
2
3
4
1
2
3
4
5
error
0.09058
0.08057
0.07908
0.0869
0.099
2.697 1013
4.518 107
0.09301
0.0291
0.00947
0.2924
0.09301
4.426 1011
3.812 1012
7.323 1013
(a)
(b)
(c)
(d)
Fig. 4. The magnetic field profiles and corresponding SFT of the resonant
TE modes when (a) PC0 is space modulated, (b) PC1 is space modulated.
When both PC0 and PC1 are space modulated, two resonant modes can be
observed. The magnetic field profiles and corresponding SFTs of the modes
a
a
at (c)
= 0.2588 and (d)
= 0.261 are shown.
(a)
(a)
(b)
(b)
Fig. 5. (a)The resonant wavelengths and Q of the cavity for increasing
number of modulated PC layers. (i) Q of the modes caused by the defect
cavity. (ii) Q of the modes caused by the MHT. (iii) The resonant wavelength
of modes caused by the defect cavity. (iv) The resonant wavelength of modes
caused by the MHT. (b) The difference between the two resonant wavelength
of the space modulated MHT cavity for increasing number of modulated PC
layers..
VI. C ONCLUSION
(a)
(b)
(c)
(d)
Fig. 7. The magnetic field profiles of both resonant modes of the cavity
for D = a/25 caused by (a) defect cavity and (b) MHT cavity. The same
profiles for D = a/10 are shown in (c) and (d) respectively. In the inset
corresponding SFTs are shown.
Fig. 8. The normalized impulse response of the cavity with added disorder.
Results are shown for disorders of increasing standard deviation.
TABLE III
P ERCENT CHANGE IN THE RESONANT WAVELENGTHS OF THE CAVITY.
Standard Deviation
% 1
% 2
0.1a
0.2a
0.1a
0.62 %
1.78 %
2.51 %
0.181 %
3.44 %
1.734 %
Ashfaqul Anwar Siraji received the B.Sc. Eng. degree in electrical and electronic engineering from Bangladesh University of Engineering and technology
(BUET) in 2012. His current research interests are photonic crystal resonators,
quantum phenomena in nanostructures and plasmonic nano-structures.
M. Shah Alam (SM04) received the B.Sc. Eng., M.Sc. Eng., and the Ph.D.
degrees in Electrical and Electronic Engineering in 1989, 1994, and 1997,
respectively. He was awarded a gold medal for outstanding performance
in B.Sc. Engineering examination. He received the Japanese Government
Scholarship from April 1991 to March 1997 for pursuing his graduate
studies, and received his Ph.D. degree from Hokkaido University, Sapporo,
Japan. In 1997, he was a visiting researcher in Electrotechnical Laboratory,
Tsukuba, Japan. Then in 1998, he became a lecturer in the Department of
Electrical and Electronic Engineering, Bangladesh University of Engineering
and Technology (BUET), Dhaka, Bangladesh, where he is now a Professor.
During 2003-2004, he was on postdoctoral study leave from BUET and
worked as a research fellow with the photonics research group in City
University London, UK. His current research interests include optical fibers,
photonic crystal fibers, nonlinear properties in fibers, electrooptic modulators,
the application of numerical techniques to guided wave photonics problems,
and microwave integrated circuits.
Dr. Alam is a senior member of IEEE, and member of Bangladesh
Computer society and the Institution of Engineers, Bangladesh.