PROBLEM 1

(15 points possible)

A time-of-flight (TOF) device outputs the following transient photocurrent

curve. Note that the thickness of the device is 5000 nm and the applied
bias to the device was 80 V. Calculate the mobility of the semiconductor in
units of cm2/(Vs).

To enter your answer using scientific notation, please use the e function.
For example, to enter 6 x 10 13, type 6e13 in the answer box.

A
time-of-flight (TOF) device outputs the following transient photocurrent
curve. Note that the thickness of the device is 5000 nm and the applied
bias to the device was 80 V. Calculate the mobility of the semiconductor
in units of cm2/(Vs).- unanswered

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PROBLEM 2: PART A

(5 points possible)

The room temperature electrical conductivity of a silicon specimen is 1000

ohm-1 m-1.
The hole concentration is known to be 1.0 x 10

23

m-3.

Assuming the electron and hole mobility values to be 0.14 m 2 V-1 s-1 and 0.05
m2 V-1 s-1, respectively, compute the electron concentration (in units of m -3).
To enter your answer using scientific notation, please use the e function.
For example, to enter 6 x 10 13, type 6e13 in the answer box.
Round to 2 decimal points.

Concentration

C
oncentration- unanswered

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PROBLEM 2: PART B

(2 points possible)

On the basis of this calculation, state whether the specimen is intrinsic, ntype, or p-type.
- unanswered
intrinsic

n-type

p-type

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PROBLEM 3

(40 points possible)

Calculate the electrical conductivity of silicon that has been doped with
ND = 5 x 1017 m-3 of P atoms. Supposed the number of majority carriers is
n = ND exp(-ED/kT) where ED = 0.05 eV is the energy difference between
the impurity level and the closest band. Estimate the position of the Fermi
level and the concentration of minority carriers. Nc and Nv for Si are 2.98 x
10

19

m-3 and 1.04 x 1019 m-3, respectively. Assume room temperature

conditions.
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For example, to enter 6 x 10 13, type 6e13 in the answer box.

Conductivity expressed in units of ohm-1m-1.

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C
onductivity- unanswered

Fermi Energy expressed in units of eV.

F
ermi Energy- unanswered

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PROBLEM 4

(40 points possible)

An initially intrinsic sample of Ge at T = 300 K is doped with 2 x 10 22 m3

As atoms. Calculate the intrinsic carrier concentration in Ge (in units of

1016 m-3). Assuming all As dopants are ionized, identify the majority and
minority carriers and calculate their concentrations. Also, calculate the
resistivity (the inverse of the conductivity) of the doped Ge sample.
Finally, calculate the temperature at which this semiconductor becomes
degenerate (i.e., when EC EF = 3 kT). For Ge: Eg = 0.66 eV, Nc = 1.05 x
1025 m-3, Nv = 3.92 x 10

24

m-3, e = 0.39 m2 V-1 s-1, h = 0.19 m2 V-1 s-1.

To enter your answer using scientific notation, please use the e function.
For example, to enter 6 x 10 13, type 6e13 in the answer box.

Intrinic Carrier Concentration expressed in units of m-3.

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I
ntrinsic Carrier Concentration- unanswered

Resistivity expressed in units of ohm-m.

R
esistivity- unanswered

Temperature expressed in K.

T
emperature- unanswered

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Show Discussion

PROBLEM 1

(20 points possible)

An organic field-effect transistor (OFET) device has the following transfer

curve. The width of the channel is 0.2 mm and the length of the channel
is 0.02 mm. The capacitance of the dielectric material is approximately 15
nF cm-2. The bias between the source and drain electrodes (VD) was 60
V. Assume that the threshold voltage is 0 V. Note that 1 F = 1 As V-1.
Calculate the mobility of the OEFT in units of cm 2/(V*s).

To enter your answer using scientific notation, please use the e function.
For example, to enter 6 x 10 13, type 6e13 in the answer box.

A
n organic field-effect transistor (OFET) device has the following transfer
curve. The width of the channel is 0.2 mm and the length of the channel
is 0.02 mm. The capacitance of the dielectric material is approximately
15 nF cm-2. The bias between the source and drain electrodes (VD) was
60 V. Assume that the threshold voltage is 0 V. Note that 1 F = 1 As V1. Calculate the mobility of the OEFT.- unanswered

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PROBLEM 2: PART A

(20 points possible)

One wishes to calculate the electron and hole mobility values in a given
semiconductor from two distinct samples at T = 300 K.

The first sample is an intrinsic semiconductor with:

Conductivity: 8.9 x 104 ohm-1 m-1 and n: 8.7 x 1023 m-3.
The second sample is the same semiconductor that has been p-doped.
The new properties of the semiconductor are as follows.
Conductivity: 2.3 x 105 ohm-1 m-1, n: 7.6 x 1022 m-3, and p: 1.0 x 1025 m-3
Calculate the electron and hole mobility values of this semiconductor
assuming that they are in the regime in which mobility values are
independent of doping concentration
Electron Mobility in units of cm2/(Vs):

E
lectron Mobility in units of cm2/(Vs):- unanswered

Hole Mobility in units of cm2/(Vs):

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H
ole Mobility in units of cm2/(Vs):- unanswered

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PROBLEM 2: PART B

(10 points possible)

One wishes to calculate the electron and hole mobility values in a given
semiconductor from two distinct samples at T = 300 K. The first sample is
an intrinsic semiconductor with:
Conductivity: 8.9 x 104 ohm-1 m-1 and n: 8.7 x 1023 m-3.
The second sample is the same semiconductor that has been p-doped.
The new properties of the semiconductor are as follows.
Conductivity: 2.3 x 105 ohm-1 m-1, n: 7.6 x 1022 m-3, and p: 1.0 x 1025 m-3
Starting with the equation for charge neutrality, calculate the number of
ionized electron-accepting sites (NA) that were introduced during the
doping process.
To enter your answer using scientific notation, please use the e function.
For example, to enter 6 x 10 13, type 6e13 in the answer box.
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S
tarting with the equation for charge neutrality, calculate the number of
ionized electron-accepting sites (NA) that were introduced during the
doping process.- unanswered

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PROBLEM 2: PART C

(10 points possible)

One wishes to calculate the electron and hole mobility values in a given
semiconductor from two distinct samples at T = 300 K. The first sample is
an intrinsic semiconductor with:
Conductivity: 8.9 x 104 ohm-1 m-1 and n: 8.7 x 10

23

m-3.

The second sample is the same semiconductor that has been p-doped.
The new properties of the semiconductor are as follows.
Conductivity: 2.3 x 10 5 ohm-1 m-1, n: 7.6X x 1022 m-3, and p: 1.0 x 1025 m-3
C) At a given temperature of T = 300 K, Nc = 3.84 x 1026 m-3 and Nv =
4.23 x 1026 m-3 for this semiconductor. Based on this information, estimate
the band gap of this material in eV.
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unanswered

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PROBLEM 3: PART A

(5 points possible)

In the variable range hopping (VRH) model, what are the two types of
distributions that are of concern.
- unanswered
Energy

Molecular Weight

Band Gap

Charge Carrier

Spatial

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PROBLEM 3: PART B

(5 points possible)

As the density of traps in the multiple trap and release model increases,
the mobility of the semiconducting material approaches that of what
would be expected if the semiconductor exhibited band-like transport.
- unanswered
True

False

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PROBLEM 3: PART C

(5 points possible)

In the charge hopping model for transport, which of the following (check
all that apply) is/are important parameter(s) for charge transfer to occur
- unanswered
Polymer molecular weight
Spatial distribution energy

Thickness of the film used in the device

Molecular weight distribution

between chromophoric segments

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Electronic coupling

PROBLEM 3: PART D

(5 points possible)

Calculate the number of holes in an n-type semiconductor that has been

doped heavily with ND = 1022 m-3, if the intrinsic carrier concentration of
the semiconductor at the given temperature is 2 x 1017 m-3
To enter your answer using scientific notation, please use the e function.
For example, to enter 6 x 10 13, type 6e13 in the answer box.

C
alculate the number of holes in an n-type semiconductor that has been
doped heavily with ND = 1022 m-3, if the intrinsic carrier concentration
of the semiconductor at the given temperature is 2 1017 m-3unanswered

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PROBLEM 4

(20 points possible)

A time-of-flight (TOF) device outputs the following transient photocurrent

curve. Note that the mobility of the semiconductor is
10-3 cm2 V-1 s-1 and the applied bias to the device was 70 V. Estimate the
thickness of the device in microns.

A
time-of-flight (TOF) device outputs the following transient photocurrent
curve. Note that the mobility of the semiconductor is 10-3 cm2 V-1 s-1
and the applied bias to the device was 70 V. Estimate the thickness of
the device.- unanswered

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