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⃝
c 2009 GFTI & MKI ISSN 1979-3898
J. Theor. Comput. Stud. Volume 8 (2009) 0105
Abstract : A hydrodynamic approach is used to illustrate hot-electron and intervalley transfer effects in ZnO
MESFET. The model is based on the solutions of the highly coupled non-linear partial differential equations of the full
hydrodynamic model. These solutions allow to calculate the electron drift velocity and other device parameters as a
function of the applied electric field. Using hydrodynamic method our calculation results show that due to the high
drain current density we can expect ZnO devices have superior high power and high gain performance. Our results of
numerical calculations are in fair agreement with other theoretical or experimental methods.
Keywords : hydrodynamic; intervalley; drift velocity; drain current
E-mail : arabshahi@um.ac.ir
Received: March 27th , 2009; Accepted for publication: June 4th , 2009
⃝
c 2009 GFTI & MKI 0105-1
2 Hydrodynamic Model for Non-equilibrium and Hot...
haviour of electrons in each valley at the kinetic level or alternatively (only for x-component),
in the semiclassical regime is determined by distribu-
→
tion function. The Boltzmann transport equation in ∂[m∗ (ϵ′ )n vx ]
various valleys are coupled through intervalley scat- + ∇[m∗ (ϵ′ )nvx v] =
∂t
tering that introduces exchanges of electron popula- →
→ ∂(nkT ) m∗ (ϵ′ )n vx
tion, energy and momentum between valleys. Con- −qn Ex − − , (3)
∂x τp (ϵ′ )
sequently, the hydrodynamic description for electron
behaviour in each valley is given by a set of hydrody- and the energy balance equation is
namic equations, and the hydrodynamic equations in
various valleys are coupled through intervalley transi- ∂ϵ
+ ∇(vϵ) =
tions. At high electric fields, a large number of elec- ∂t
trons are hot enough to overcome the energy sepa- →
−qnv E −∇(nkT v) − ∇(−k∇T ) −
ration between central and satellite valleys. In this
case, the frequent intervalley scattering dominates the ϵ − 32 nkTL
, (4)
scattering processes, and it therefore significantly in- τϵ (ϵ′ )
fluences nonequilibrium transport phenomena of elec-
trons. To accurately describe nonequilibrium hot elec- where n, ϵ (ϵ′ =ϵ/n), and v are the electron density,
tron transport phenomena at the hydrodynamic level, the electron energy density (average electron energy)
→
a set of multivalley hydrodynamic equations that is and the electron drift velocity, respectively. vx is
capable of properly including exchanges of electron the x-component of the electron drift velocity and
→ →
population, energy and momentum between valleys is p = m∗ n v is the momentum density. Correspod-
thus necessary. ing equations are valid for the y and z components.
This paper is organised as follows. In section 2, we T is the electron temperature and ϵ′0 = 3/2kTL is the
give a short definition of the hydrodynamic model for average termal equilibrium energy of electrons, where
ZnO structure. It is emphasized that a analysis of the TL is the lattice temperature. The electronic current
→ → →
physical features of the charge carrier transport mod- density j inside the active device is j = −ne v , so
els is the basis for a clear understanding of their limits the total current density is,
of applicability. In section 3 results of hydrodynamic
→
model in ZnO MESFET are interpreted. → → ∂E
j t = −ne v +ϵ0 ϵr . (5)
∂t
0105-2
3 Hydrodynamic Model for Non-equilibrium and Hot...
In our simulated model time discretization is used −(ptx;i+ 1 ,j vx;i+ 12 ,j − ptx;i− 1 ,j vx;i− 12 ,j )/∆x
2 2
for all the hydrodynamic equations by forward Eu- −(ptx;i+ 1 ,j vy;i,j+ 12 ,j − ptx;i+ 1 ,j−1 vy;i,j− 12 /∆y
ler differencing method. The discretization is always 2 2
equation is solved by a combined fast Fourier trans- and the momentum density at (i,j) is extrapolated
form [15] and Buneman cyclic reduction method [16- from neighbouring points in the direction of the elec-
17] developed by Walmsley and Abram [18]. This cal- tron flow x-component,
culational scheme is integrated with a capacity matrix
approach [17] that facilitates the use of individual rect- 3 t+1 1
pt+1
x;i,j = p 1 − pt+1 3 : pt+1
x;i+ 12 ,j
≥0
angular regions to form more complicated structures. 2 x;i− 2 ,j 2 x;i− 2 ,j
Poisson’s equation is expressed in discrete form as a 3 1
pt+1
x;i,j = pt+1 1 − pt+1 3 : pt+1
x;i+ 12 ,j
≤ 0, (11)
set of three-point finite difference equations. 2 x;i+ 2 ,j 2 x;i+ 2 ,j
and finally we have,
After setting all the material and device parame- t+1 ∗t
vx;i,j = pt+1 t
x;i,j ni,j mi,j , (12)
ters, the simulation is started in a state of charge
neutrality everywhere in the device. The simulated
t+1
vx;i+ 1 = t+1
jx;i+ 1 nti+ 1 ,j m∗t
i+ 12 ,j . (13)
2 ,j 2 ,j 2
particles are distributed appropriately among all the
mesh cells to achieve the required neutrality. In the The electron temperature is related to the en-
two-dimensional device models used here there is no ergy density by the relation ϵti,j = 32 nti,j kTi,j t
+
1 ∗ t 2t 2t t
variation of electron density or electric field normal m n (v
2 i,j i,j x;i,j + vy;i,j ) + βU ;i,j ∆EΓU and can assume
to the x − y plane and scaler quantities at a timestep to be dependent variable. The upwind discretization
like electron density nti,j , energy ϵti,j , temperature Ti,j
t of the energy balance equation is given by,
t
and potential ϕi,j , are located at the center of the
i,j − ϵi,j
ϵt+1 t
cells, whereas vectorial quantities like the electric field = −enti,j (vx;i,j
t+1 t
Ex;i,j t+1 t
+ vy;i,j Ey;i,j )
t
components Ex;i+ 1
t
, Ey;i+j+ 1 or the velocity compo-
∆t
,j
t
2
t
2
ϵti,j − 23 nti,j kTL
nents vx;i+ 1
2 ,j
, vy;i+j+ 1 are always calculated first at − t
2
τϵ;i,j
midpoint between the scaler quantities. For example,
we can define for electric field the following interme- −(jx;e,i+
t
1
,j − jx;e,i− 1 ,j )/∆x
t
2 2
diate value as,
−(jx;p,i+
t
1
,j − jx;p,i,i− 1 ,j )/∆x
t
2 2
−(jx;h,i,j+
t
1 − j
t
x;h,i− 1 ,j )/∆x
2 2
−(jy;e,i,j+
t
1
,j − jy;e,i,j− 1 )/∆y
t
2 2
1
Ex;i,j = (E 1 + Ex;i+ 21 ,j ). (8) −(jy;p,i,j+
t
1 − j
t
y;p,i,j− 1 )/∆y
2 x;i− 2 ,j 2 2
−(jy;h,i,j+
t
1 − j
t
y;h,i,j− 1 )/∆y, (14)
2 2
0105-3
4 Hydrodynamic Model for Non-equilibrium and Hot...
0.2 Pm
1 Pm 1 Pm
6e+07
source gate drain
30 Volt
20 Volt
2e+07
Buffer layer (II)
2×1024 m-3
(I) 2×1023 m-3 S G D
0
(II) 5×1022 m-3 10.0 60.0 2.5
0 Distance (microns)
0105-4
5 Hydrodynamic Model for Non-equilibrium and Hot...
0
−6.0
−26.0 (a)
eV
−46.0
−66.0 Γ Band edge
−50
−86.0
10.0 30.0 50.0 70.0 90.0 110.0 130.0 150.0 170.0
3e+05
301000.0
201000.0
(b)
−1
ms
101000.0 Drift velocity
0
1000.0
−20.0 30.0 80.0 130.0 180.0 230.0
2.5
1.0 (c)
eV
Kinetic energy
0.00
10.0 60.0 110.0 160.0
24.0
26
(d)
−3
23.0
log10m
22.0 Electron density
23
21.0
−40.0 10.0
0.0 60.0 110.0
2.5 160.0 210.0
Distance along source−drain axis (µm)
Figure 3: Interpolated contour plot showing the steady- Figure 5: Electron transport characteristics as a function
state Γ-valley band profile through the simulated ZnO of position in the model ZnO MESFET. (a) Γ-valley band
MESFET at room temperature when the bias applied to profile,(b) Average drift velocity, (c) Average kinetic en-
the gate is -1 V and the drain-source bias is 20 V. ergy and (d) Electron density when the bias applied to the
gate is -1 V and the drain-source bias is 20 V.
0105-5