Dispositivos electrnicos de potencia

[1]

ABB, Thermal design and temperature ratings of IGBT modules.

Application Note 5SYA 2093-00.

[2]

U. Schlapbach, M. Rahimo, C. von Arx, A. Mukhitdinov, and S. Linder,

1200V IGBTs operating at 200C? An investigation on the potentials and
the design constraints, in Proceedings of the 19th International
Symposium on Power Semiconductor Devices and ICs, 2007, pp. 912.

[3]

Y. A. engel, Heat & Mass Transfer: A Practical Approach, 3rd ed.

McGraw-Hill, 2007, p. 901.

[4]

A. Wintrich, U. Nicolai, W. Tursky, and T. Reimann, Application Manual

Power Semiconductors, 1st ed. SEMIKRON International GmbH, 2011, p.
466.

[5]

H. Ludwig, Application Note, V1.0, 2010 Technical Information IGBT

modules Use of Power Cycling curves for IGBT 4. pp. 16, 2010.

[6]

P. Roussel, SiC market and industry update, in Int. SiC Power Electron.
Appl. Workshop, 2011.

[7]

J. L. (Regional P. Marketing), Infineon IGBT/Modules, Infineon. .

[8]

Power Electronics for Wind Turbines, 2012. [Online]. Available:

http://www.imicronews.com/upload/Rapports/Yole_Super_Wind_Turbine_sample_Jan
uary_2012.pdf. [Accessed: 03-Jul-2014].

[9]

T. Y. Horio M, Nashida N, Iizuka Y, Ikeda Y, New power module structure

with low thermal impedance and high reliability for SiC devices, in PCIM
Europe, 2011.

[10] R. R. Siepe D, Bayerer R, The future of wire bonding is? Wirebonding!,

in Nuremberg/Germany: Infineon Technologies AG, 2010.
[11] K. Weidner and M. Kaspar, Planar Interconnect Technology for Power
Module System Integration, in CIPS 2012, 2012, pp. 68.

[12] S. U. S. elektronik G. & C. KG., Reliability of Planar SKiN interconnect

Technology, in Chips, 2012.
[13] O. M., Extending the power capacity of IGBT modules., in PCIM-Europe,
2008.
[14] N. A. Nagaune F, Adachi S, Hitachi T, Gohara H, Morozumi A, High
thermal conductivity and reliability, EVS 26. Calif. Fuji Electr. Co., Ltd.,
2012.
[15] Curamik, Ceramic Substrates, specification Si3N4. Version 4.12 EN I
1/2c.
[16] M. Horio, Y. Iizuka, Y. Ikeda, E. Mochizuki, and Y. Takahashi, Ultra
compact and high reliable SiC MOSFET power module with 200C
operating capability, in 2012 24th International Symposium on Power
Semiconductor Devices and ICs, 2012, pp. 8184.
[17] M. Horio, Y. Iizuka, Y. Ikeda, E. Mochizuki, and Y. Takahashi, Ultra
compact and high reliable SiC MOSFET power module with 200C
operating capability, in 2012 24th International Symposium on Power
Semiconductor Devices and ICs, 2012, pp. 8184.
[18] H. Kon, K. Nakayama, S. Yanagisawa, J. Miwa, and Y. Uetake, The 4500
V-750 A planar gate press pack IEGT, in Proceedings of the 10th
International Symposium on Power Semiconductor Devices and ICs.
ISPSD98 (IEEE Cat. No.98CH36212), 1998, pp. 8184.
[19] Y. Uchida, Y. Seki, Y. Takahashi, and M. Ichijoh, Development of high
power press-pack IGBT and its applications, in 2000 22nd International
Conference on Microelectronics. Proceedings (Cat. No.00TH8400), 2000,
vol. 1, pp. 125129.
[20] S. Kaufmann and F. Zwick, 10 kV IGBT press pack modules with series
connected chips, in Proceedings of the 14th International Symposium on
Power Semiconductor Devices and Ics, 2002, pp. 8992.
[21] A. Golland and F. Wakeman, Application of press-pack IGBTs in traction
refurbishment, in Twentieth Annual IEEE Applied Power Electronics
Conference and Exposition, 2005. APEC 2005., 2005, vol. 3, pp. 2030
2035.

[22] V. K. Khanna, Insulated Gate Bipolar Transistor IGBT Theory and

Design, Electronics, pp. 2384523845, 2003.
[23] C. Busca, R. Teodorescu, and F. Blaabjerg, Lifetime prediction of highpower press-pack IGBTs in wind power applications, no. November. pp.
123, 2013.
[24] C. Busca, R. Teodorescu, F. Blaabjerg, L. Helle, and T. Abeyasekera,
Dynamic thermal modelling and analysis of press-pack IGBTs both at
component-level and chip-level, in IECON 2013 - 39th Annual
Conference of the IEEE Industrial Electronics Society, 2013, pp. 677682.
[25] C. J. M. Lasance, Heat Spreading: Not a Trivial Problem, Electron.
Cool., p. 8, 2008.
[26] Heat spreader options and materials, Qpedia, vol. 8, no. 2, p. 3, 2013.
[27] C. Busca, R. Teodorescu, F. Blaabjerg, S. Munk-Nielsen, L. Helle, T.
Abeyasekera, and P. Rodriguez, An overview of the reliability prediction
related aspects of high power IGBTs in wind power applications,
Microelectron. Reliab., vol. 51, no. 911, pp. 19031907, Sep. 2011.
[28] M. Ciappa, Selected failure mechanisms of modern power modules,
Microelectron. Reliab., vol. 42, no. 45, pp. 653667, Apr. 2002.
[29] Fuji Electric, Chapter 11 Reliability of power module, 6th-Generation VSeries IGBT Modul. Appl. Man., pp. 111.
[30] S. Ramminger, N. Seliger, and G. Wachutka, Reliability model for Al wire
bonds subjected to heel crack failures, Microelectron. Reliab., vol. 40, no.
810, pp. 15211525, Aug. 2000.
[31] C. Busca, Modeling lifetime of high power IGBTs in wind power
applications - An overview, in 2011 IEEE International Symposium on
Industrial Electronics, 2011, pp. 14081413.
[32] P. Dietrich, Trends in automotive power semiconductor packaging,
Microelectron. Reliab., vol. 53, no. 911, pp. 16811686, Sep. 2013.
[33] K. Ma, M. Liserre, and F. Blaabjerg, Reactive power control methods for
improved reliability of wind power inverters under wind speed variations,

in 2012 IEEE Energy Conversion Congress and Exposition (ECCE), 2012,

pp. 31053112.
[34] T. Wu and A. Castellazzi, Temperature adaptive IGBT gate-driver
design, in Proceedings of the 2011 14th European Conference on Power
Electronics and Applications, EPE 2011, 2011.
[35] Improved Thermal Cycle Life Reliablity Benefits for EV Powerex.
[Online]. Available: http://www.docstoc.com/docs/131260444/ImprovedThermal-Cycle-Life-Reliablity-Benefits-for-EV-Powerex. [Accessed: 03-Jul2014].
[36] M. Ikonen, Power cycling lifetime estimation of igbt power modules based
on chip temperature modeling. 2012, p. 120.
[37] Z. Topolosky, Reliability Analysis of Springs Used as Interconnects in
Press-pack Power Electronic Modules. University of Maryland, College
Park, 2002.
[38] G. F. Wakeman and A. G. Li, New family of 4.5kV Press-pack IGBTs, in
PCIM05 Conference proceedings, 2005, pp. 16.
[39] R. Bayerer, Advanced packaging yields higher performance and reliability
in power electronics, Microelectron. Reliab., vol. 50, no. 911, pp. 1715
1719, Sep. 2010.
[40] M. Ikonen, Power cycling lifetime estimation of igbt power modules based
on chip temperature modeling. p. 120, 2012.
[41] R. Bayerer, Higher Junction Temperature in Power Modules a demand
from hybrid cars, a potential for the next step increase in power density for
various Variable Speed Drives, PCIM, pp. 17, 2008.
[42] R. Bayerer, Advanced packaging yields higher performance and reliability
in power electronics, Microelectron. Reliab., vol. 50, no. 911, pp. 1715
1719, Sep. 2010.
[43] G. Miller, New semiconductor technologies challenge package and
system setups. pp. 16, 2010.
[44] Next Generation of internal Module Packaging Technology, 2011.
[Online].
Available:

http://www.tecnoimprese.it/user/0900_Doc/20121019165032XT_Technolo
gy and TIM - Power Fortronic 2012.pdf. [Accessed: 19-Nov-2014].
[45] Y. Nishimura, E. Mochizuki, and Y. Takahashi, Development of a nextgeneration IGBT module using a new insulation substrate, Fuji Electr.
Rev., vol. 51, no. 2, pp. 5256, 2005.
[46] T. Stockmeier, From Packaging to Un -Packaging - Trends in Power
Semiconductor Modules, Int. Symp. Power Semicond. Devices ICs, vol.
20, pp. 1219, 2008.
[47] Dieter Liesabeths - CREE, SiC Transistor & Diodes - Technical training.
2014.
[48] A. Prez-Toms, P. Brosselard, J. Hassan, X. Jord, P. Godignon, M.
Placidi, A. Constant, J. Milln, and J. P. Bergman, Schottky versus
bipolar 3.3 kV SiC diodes, Semicond. Sci. Technol., vol. 23, no. 12, p.
125004, 2008.
[49] http://www.genesicsemi.com/. .
[50] H. Niwa, G. Feng, J. Suda, and T. Kimoto, Breakdown characteristics of
1220 kV-class 4H-SiC PiN diodes with improved junction termination
structures, in 2012 24th International Symposium on Power
Semiconductor Devices and ICs, 2012, pp. 381384.
[51] H. Niwa, J. Suda, and T. Kimoto, 21.7 kV 4H-SiC PiN Diode with a
Space-Modulated Junction Termination Extension, Applied Physics
Express, vol. 5, no. 6. p. 064001, 2012.
[52] Infineon Technologies, 1200V SiC thinQ! TM Generation 5 Schottky
Diodes 1200V SiC thinQ! TM Generation 5 Schottky Diodes New level of
efficiency and reliability in single-phase and 3-phase applications, 2014.
[53] D. Stephani, Todays and tomorrows industrial utilization of silicon
carbide power devices, in 10th Eur. Conf. Power Electron. Appl.,
Toulouse, France, 2003, p. 1199.
[54] R. J. Callanan, A. Agarwal, A. Burk, M. Das, B. Hull, F. Husna, A. Powell,
and J. Richmond, Recent progress in SiC DMOSFETs and JBS diodes at
Cree, in 2008 34th Annual Conference of IEEE Industrial Electronics,
2008, pp. 28852890.

[55] http://www.cree.com. .
[56] http://www.rohm.com. .
[57] R. A. Wood and T. E. Salem, Evaluation of a 1200-V, 800-A All-SiC Dual
Module, Power Electron. IEEE Trans., vol. 26, no. 9, pp. 25042511,
2011.
[58] S.-H. R. S.-H. Ryu, S. Krishnaswami, B. Hull, J. Richmond, A. Agarwal,
and A. Hefner, 10 kV, 5A 4H-SiC Power DMOSFET, 2006 IEEE Int.
Symp. Power Semicond. Devices ICs, 2006.
[59] S.-H. Ryu, C. Capell, C. Jonas, L. Cheng, M. OLoughlin, A. Burk, A.
Agarwal, J. Palmour, and A. Hefner, Ultra high voltage (>12 kV), high
performance 4H-SiC IGBTs, in 2012 24th International Symposium on
Power Semiconductor Devices and ICs, 2012, pp. 257260.
[60] D. A. Marckx, Breakthrough in power electronics from SiC, 2006.
[61] S. Krishnaswami, A. Agarwal, J. Richmond, T. P. Chow, B. Geil, K. Jones,
and C. Scozzie, 4 kV, 10 A Bipolar Junction Transistors in 4H-SiC, in
2006 IEEE International Symposium on Power Semiconductor Devices &
ICs, 2006, pp. 14.
[62] and M. O. ] B. Buono, R. Ghandi, M. Domeij, B. G. Malm, C.-M. Zetterling,
Current gain degradation in 4H-SiC power BJTs, in Mater. Sci. Forum,
2011, pp. vol. 679680, pp. 702705.
[63] Y. Sugawara, Y. Miyanagi, K. Asano, A. Agarwal, S. Ryu, J. Palmour, Y.
Shoji, S. Okada, S. Ogata, and T. Izumi, 4.5 kV 120A SICGT and Its
PWM Three Phase Inverter Operation of 100kVA class, 2006 IEEE Int.
Symp. Power Semicond. Devices ICs, 2006.
[64] A. Tanaka, S. Ogata, T. Izumi, K. Nakayama, T. Hayashi, Y. Miyanagi, and
K. Asano, Reliability investigation of SiC bipolar device module in long
time inverter operation, in 2012 24th International Symposium on Power
Semiconductor Devices and ICs, 2012, pp. 233236.
[65] J. Liu, K. L. Wong, S. Allen, and J. Mookken, Performance Evaluations of
Hard-Switching Interleaved DC / DC Boost Converter with New
Generation Silicon Carbide MOSFETs, CREE, 2012.

[66] J. Mookken, B. Agrawal, and J. Liu, Efficient and Compact 50kW Gen2
SiC Device Based PV String Inverter, in PCIM Europe, 2014, no. May, pp.
2022.
[67] Y. Sugawara, S. Ogata, T. Izumi, K. Nakayama, Y. Miyanagi, K. Asano, A.
Tanaka, S. Okada, and R. Ishi, Development of a 100 kVA SiC inverter
with high overload capability of 300 kVA, in 2009 21st International
Symposium on Power Semiconductor Devices & ICs, 2009, pp. 331334.
[68] B. De Jaeger, M. Van Hove, D. Wellekens, X. Kang, H. Liang, G.
Mannaert, K. Geens, and S. Decoutere, Au-free CMOS-compatible
AlGaN/GaN HEMT processing on 200 mm Si substrates, in Proceedings
of the International Symposium on Power Semiconductor Devices and
ICs, 2012, pp. 4952.
[69] A. P. Zhang, G. T. Dang, F. Ren, H. Cho, K. P. Lee, S. J. Pearton, J. I.
Chyi, T. E. Nee, C. M. Lee, and C. C. Chuo, Comparison of GaN P-I-N
and Schottky rectifier performance, IEEE Trans. Electron Devices, vol.
48, no. 3, pp. 407411, 2001.
[70] A. P. Zhang, J. W. Johnson, F. Ren, J. Han, A. Y. Polyakov, N. B. Smirnov,
A. V. Govorkov, J. M. Redwing, K. P. Lee, and S. J. Pearton, Lateral
AlxGa1-xN power rectifiers with 9.7 kV reverse breakdown voltage, Appl.
Phys. Lett., vol. 78, no. 6, pp. 823825, 2001.
[71] M. Placidi, A. Prez-Toms, A. Constant, G. Rius, N. Mestres, J. Milln,
and P. Godignon, Effects of cap layer on ohmic Ti/Al contacts to Si+
implanted GaN, in Applied Surface Science, 2009, vol. 255, no. 12, pp.
60576060.
[72] M. Asif Khan, J. N. Kuznia, D. T. Olson, W. J. Schaff, J. W. Burm, and M.
S. Shur, Microwave performance of a 0.25 um gate AlGaN/GaN
heterostructure field effect transistor, Appl. Phys. Lett., vol. 65, no. 9, pp.
11211123, 1994.
[73] and N. I. S. Yoshida, J. Li, H. Takehara, H. Kambayashi, Fabrication of
AlGaN/GaN HFET with a high breakdown voltage of over 1050 V, in Int.
Symp. Power Semicond. Devices ICs, 2006, pp. 317320.
[74] E. Bahat-Treidel, F. Brunner, O. Hilt, E. Cho, J. Wrfl, and G. Trankle,
AlGaN/GaN/GaN:C back-barrier HFETs with breakdown voltage of over 1

kV and low RON A, IEEE Trans. Electron Devices, vol. 57, no. 11, pp.
30503058, 2010.
[75] P. Srivastava, J. Das, D. Visalli, M. Van Hove, P. E. Malinowski, D.
Marcon, S. Lenci, K. Geens, K. Cheng, M. Leys, S. Decoutere, R. P.
Mertens, and G. Borghs, Record breakdown voltage (2200 V) of GaN
DHFETs on Si with 2-um buffer thickness by local substrate removal, in
IEEE Electron Device Letters, 2011, vol. 32, no. 1, pp. 3032.
[76] Y. Uemoto, D. Shibata, M. Yanagihara, H. Ishida, H. Matsuo, S. Nagai, N.
Batta, M. Li, T. Ueda, T. Tanaka, and D. Ueda, 8300V blocking voltage
AlGaN/GaN power HFET with thick poly-AIN passivation, in Technical
Digest - International Electron Devices Meeting, IEDM, 2007, pp. 861
864.
[77] W. Saito, Y. Takada, M. Kuraguchi, K. Tsuda, and I. Omura, Recessedgate structure approach toward normally off high-voltage AlGaN/GaN
HEMT for power electronics applications, IEEE Trans. Electron Devices,
vol. 53, no. 2, pp. 356362, 2006.
[78] Y. Cai, Y. Zhou, K. M. Lau, and K. J. Chen, Control of threshold voltage of
AlGaN/GaN HEMTs by fluoride-based plasma treatment: From depletion
mode to enhancement mode, IEEE Trans. Electron Devices, vol. 53, no.
9, pp. 22072214, 2006.
[79] T. Palacios, C. S. Suh, A. Chakraborty, S. Keller, S. P. DenBaars, and U.
K. Mishra, High-performance e-mode AlGaN/GaN HEMTs, IEEE
Electron Device Lett., vol. 27, no. 6, pp. 428430, 2006.
[80] X. Hu, G. Simin, J. Yang, M. Asif Khan, R. Gaska, and M. S. Shur,
Enhancement mode AlGaN/GaN HFET with selectively grown pn junction
gate, Electronics Letters, vol. 36, no. 8. p. 753, 2000.
[81] and J. W. O. Hilt, E. Bahat-Treidel, E. Cho, S. Singwald, Impact of buffer
composition on the dynamic on-state resistance of high-voltage
AlGaN/GaN HFETs, Int. Symp. Power Semicond. Devices ICs, pp. 345
348, 2012.
[82] http://epc-co.com/epc. .
[83] C. J. M. Lasance, Advances In High-Performance Cooling For
Electronics Electronics Cooling Magazine - Focused on Thermal

Management, TIMs, Fans, Heat Sinks, CFD Software, LEDs/Lighting

Electronics Cooling Magazine Focused on Thermal Management, TIMs,
Fans, Heat Sinks, 2005. [Online]. Available: http://www.electronicscooling.com/2005/11/advances-in-high-performance-cooling-forelectronics/. [Accessed: 03-Jul-2014].
[84] Mersen, Cooling of Power Electronics, pp. 133, 2012.
[85] S. S. Kang, Advanced Cooling for Power Electronics. pp. 18, 2012.
[86] Z. Ling, Z. Zhang, G. Shi, X. Fang, L. Wang, X. Gao, Y. Fang, T. Xu, S.
Wang, and X. Liu, Review on thermal management systems using phase
change materials for electronic components, Li-ion batteries and
photovoltaic modules, Renew. Sustain. Energy Rev., vol. 31, pp. 427
438, Mar. 2014.
[87] Thermal Buffer Heat Sink for Time-Averaged Operating Conditions.
[Online].
Available:
http://www1.eere.energy.gov/vehiclesandfuels/pdfs/program/2007_apeem
_report.pdf. [Accessed: 03-Jul-2014].
[88] D. B. Tuckerman and R. F. W. Pease, HIGH-PERFORMANCE HEAT
SINKING FOR VLSI., vol. EDL-2, no. 5. 1981, pp. 126129.
[89] B. W. Williams, High Performance Cooling for Power Electronics, in
Principles and elements of power electronics: devices, drivers,
applications, and passive components, 2007, pp. 179250.
[90] Custom Cold Plate Design - Application Note - Lytron Inc. [Online].
Available:
http://www.lytron.com/Tools-and-TechnicalReference/Application-Notes/Designing-Custom-Cold-Plates. [Accessed:
03-Jul-2014].
[91] Cold Plates - Standard Performance-Fin CP30 Cold Plates - Lytron Inc.
[Online]. Available: http://www.lytron.com/Cold-Plates/Standard/ColdPlates-Performance-Fin. [Accessed: 03-Jul-2014].
[92] Microchannel Liquid Cooling - Mikros Manufacturing - Pushing the Limits
of
Liquid
Cooling.
[Online].
Available:
http://www.mikrosmanufacturing.com/. [Accessed: 03-Jul-2014].

[93] Liquid Cooling - The Best Heat Transfer Fluids for Liquid Cooling
Application
Note
Lytron
Inc.
[Online].
Available:
http://www.lytron.com/Tools-and-Technical-Reference/ApplicationNotes/The-Best-Heat-Transfer-Fluids-for-Liquid-Cooling. [Accessed: 03Jul-2014].
[94] K. Sasaki and M. Hiyoshi, Small size, Low Thermal Resistance and high
reliability packaging Technologies of IGBT Module for Wind Power
Applications, Hitachi Ltd. [Online]. Available: http://www.hitachi-powersemiconductor-device.co.jp/en/product/igbt/pdf/pcim_mbm600f17d.pdf.
[Accessed: 03-Jul-2014].
[95] T. Hitachi, H. Gohara, and F. Nagaune, Direct Liquid Cooling IGBT
Module for Automotive Applications, Fuji Electr. Rev., vol. 58, no. 2, pp.
5559, 2012.
[96] D. Moreno, J.; Reeves, M.; Beucher, P.; Loong, S.-J. ; Bono, Pushing
the Limits of liquid Cooling: Design and Analysis of a direct liquid Cooling
System for Power Modules, in PCIM POWER ELECTRONICS
CONFERENCE, 2012, pp. 519524.
[97] 33mm X 34mm Cold Plate Information | Mikros Manufacturing | Pushing
the
Limits
of
Liquid
Cooling.
[Online].
Available:
http://www.mikrosmanufacturing.com/sample-cold-plate/. [Accessed: 03Jul-2014].
[98] R. L. Webb, High-performance, low-cost liquid micro-channel cooler.
Microcool, pp. 17.
[99] Liquid Cooling | Thermal Management | Pumped Liquid | ACT Advanced Cooling Technologies. [Online]. Available: http://www.1act.com/advanced-technologies/pumped-liquid-cooling/oscillating-liquidcooling/. [Accessed: 03-Jul-2014].
[100] D. L. Saums, Vaporizable dielectric fluid cooling for IGBT power
semiconductors. pp. 17, 2010.
[101] R. Hannemann and S. Mackey, Design and Performance of Meso-Scale
Evaporative Cold Plates, in Proceedings, Binghamton University/GE
Global Research Electronics Packaging Symposium, 2007.

[102] E. Cetegen, S. Dessiatoun, and M. M. Ohadi, FORCE FED BOILING

AND CONDENSATION FOR HIGH HEAT FLUX APPLICATIONS, in VII
Minsk International Seminar Heat Pipes, Heat Pumps, Refrigerators,
Power Sources, 2008, pp. 482489.
[103] B. Agostini, M. Fabbri, J. E. Park, L. Wojtan, J. R. Thome, and B. Michel,
State of the Art of High Heat Flux Cooling Technologies, Heat Transf.
Eng., vol. 28, no. 4, pp. 258281, Apr. 2007.
[104] K. Olesen, R. Bredtmann, and R. Eisele, ShowerPower New Cooling
Concept for Automotive Applications, in Automotive Power Electronics,
2006, pp. 19.
[105] M. Reeves, J. Moreno, P. Beucher, S. Loong, and D. Bono, Pushing the
limits of liquid cooling: Design and analysis of a direct liquid cooling
system for power modules Design of a direct liquid system for power
modules.
[106] IGBT Cooling. pp. 124.
[107] T. enyldz, R. Eisele, and K. Olesen, THERMAL MANAGEMENT
CONCEPTS FOR POWER ELECTRONIC MODULES, Danfoss Silicon
Power
GmbH.
[Online].
Available:
http://www.emo.org.tr/ekler/800149d2f947ad4_ek.pdf. [Accessed: 03-Jul2014].
[108] S. Kang, Cooling for EV and HEV applications, 2014. [Online]. Available:
http://www.apec-conf.org/wp-content/uploads/2014/03/IS2-3-1.pdf.
[Accessed: 03-Jul-2014].
[109] curamik Micro-Channel Coolers. [Online]. Available:
http://www.rogerscorp.com/pes/curamik/producttypes/2/curamik-MicroChannel-Coolers.aspx. [Accessed: 03-Jul-2014].
[110] Advantages & Benefits of 2-Phase Immersion Cooling. [Online].
Available: http://www.allied-control.com/immersion-cooling. [Accessed:
03-Jul-2014].
[111] E. N. Wang, L. Zhang, L. Jiang, J.-M. Koo, J. G. Maveety, E. A. Sanchez,
K. E. Goodson, and T. W. Kenny, Micromachined Jets for Liquid
Impingement Cooling of VLSI Chips, J. Microelectromechanical Syst.,
vol. 13, no. 5, pp. 833842, Oct. 2004.

[112] THERMAL CONTACT RESISTANCE. [Online]. Available:

http://www.thermopedia.com/content/1188/. [Accessed: 04-Jul-2014].