$GYDQFHG 3RZHU 026)(7

IRF634A

FEATURES

BVDSS = 250 V

Avalanche Rugged Technology

Rugged Gate Oxide Technology

RDS(on) = 0.45

Lower Input Capacitance

Improved Gate Charge

ID = 8.1 A

Extended Safe Operating Area

Lower Leakage Current: 10A (Max.) @ VDS = 250V

TO-220

Lower RDS(ON): 0.327 (Typ.)

1
2
3

1.Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol
VDSS
ID

Characteristic

Value

Units

Drain-to-Source Voltage

250

Continuous Drain Current (TC=25C)

8.1

Continuous Drain Current (TC=100C)

5.1

IDM

Drain Current-Pulsed

VGS

Gate-to-Source Voltage

EAS

Single Pulsed Avalanche Energy

IAR

Avalanche Current

EAR
dv/dt
PD
TJ , TSTG
TL

32

30

(2)

205

mJ

(1)

8.1

Repetitive Avalanche Energy

(1)

7.4

mJ

Peak Diode Recovery dv/dt

(3)

4.8

V/ns

74

0.59

W/C

(1)

Total Power Dissipation (TC=25C)

Linear Derating Factor
Operating Junction and

- 55 to +150

Storage Temperature Range

Maximum Lead Temp. for Soldering

300

Purposes, 1/8 from case for 5-seconds

Thermal Resistance
Symbol

Characteristic

Typ.

Max.

RJC

Junction-to-Case

--

1.69

RCS

Case-to-Sink

0.5

--

RJA

Junction-to-Ambient

--

62.5

Units
C/W

Rev. B

1999 Fairchild Semiconductor Corporation

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IRF634A
Electrical Characteristics (TC=25C unless otherwise specified)
Symbol

Characteristic

BVDSS

Drain-Source Breakdown Voltage

250

--

--

BV/TJ

Breakdown Voltage Temp. Coeff.

--

0.29

--

2.0

--

4.0

Gate-Source Leakage , Forward

--

--

100

Gate-Source Leakage , Reverse

--

--

-100

--

--

10

--

--

100

--

--

0.45

IGSS
IDSS
RDS(on)

Gate Threshold Voltage

Drain-to-Source Leakage Current

Static Drain-Source
On-State Resistance

gfs

Forward Transconductance

--

6.1

--

Ciss

Input Capacitance

--

730

950

Coss

Output Capacitance

--

110

130

Crss

Reverse Transfer Capacitance

--

50

60

td(on)

Turn-On Delay Time

--

13

40

Rise Time

--

14

40

Turn-Off Delay Time

--

53

120

Fall Time

--

21

50

tr
td(off)
tf
Qg

Total Gate Charge

--

30

40

Qgs

Gate-Source Charge

--

5.8

--

Qgd

Gate-Drain ( Miller ) Charge

--

13.5

--

Test Condition
VGS=0V,ID=250A

V/C ID=250A
V
nA
A

VGS(th)

Min. Typ. Max. Units

pF

See Fig 7

VDS=5V,ID=250A
VGS=30V
VGS=-30V
VDS=250V
VDS=200V,TC=125C
VGS=10V,ID=4.05A

(4)

VDS=40V,ID=4.05A

(4)

VGS=0V,VDS=25V,f =1MHz

See Fig 5
VDD=125V,ID=8.1A,

ns

RG=12

See Fig 13

(4) (5)

VDS=200V,VGS=10V,
nC

ID=8.1A

See Fig 6 & Fig 12 (4) (5)

Source-Drain Diode Ratings and Characteristics

Symbol

Characteristic

IS

Continuous Source Current

Min. Typ. Max. Units

--

--

8.1

Test Condition
Integral reverse pn-diode

ISM

Pulsed-Source Current

(1)

--

--

32

VSD

Diode Forward Voltage

(4)

--

--

1.5

TJ=25C,IS=8.1A,VGS=0V

trr

Reverse Recovery Time

--

190

--

ns

TJ=25C,IF=8.1A

Qrr

Reverse Recovery Charge

--

1.28

--

diF/dt=100A/s

Notes;
(1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
(2) L=5mH, IAS=8.1A, VDD=50V, RG=27, Starting TJ =25C
(3) ISD 8.1A, di/dt 210A/s, VDD BVDSS , Starting TJ =25C
(4) Pulse Test: Pulse Width = 250s, Duty Cycle 2%
(5) Essentially Independent of Operating Temperature

in the MOSFET

(4)

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IRF634A

Fig 1. Output Characteristics

Fig 2. Transfer Characteristics

VGS
Top :

15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V

101

ID , Drain Current [A]

ID , Drain Current [A]

101

100

@ Notes :
1. 250 s Pulse Test
2. TC = 25 oC

25 oC

@ Notes :
1. VGS = 0 V
2. VDS = 40 V
3. 250 s Pulse Test

- 55 oC

-1

10

150 oC

100

-1

10-1

100

10

101

10

VGS , Gate-Source Voltage [V]

VDS , Drain-Source Voltage [V]

Fig 3. On-Resistance vs. Drain Current

Fig 4. Source-Drain Diode Forward Voltage

IDR , Reverse Drain Current [A]

RDS(on) , [ ]
Drain-Source On-Resistance

1.00

VGS = 10 V

0.75

0.50

VGS = 20 V
0.25
o

@ Note : TJ = 25 C
0.00
0

10

20

30

101

100

25 oC
10-1
0.2

40

@ Notes :
1. VGS = 0 V
2. 250 s Pulse Test

150 oC

0.4

0.6

0.8

1.0

1.2

1.4

1.6

ID , Drain Current [A]

VSD , Source-Drain Voltage [V]

Fig 5. Capacitance vs. Drain-Source Voltage

Fig 6. Gate Charge vs. Gate-Source Voltage

1200

800

400

@ Notes :
1. VGS = 0 V
2. f = 1 MHz

C oss
C rss

00
10

101

VDS , Drain-Source Voltage [V]

VDS = 50 V

10

VGS , Gate-Source Voltage [V]

Capacitance [pF]

C iss

Ciss= Cgs+ Cgd ( Cds= shorted )

Coss= Cds+ Cgd
Crss= Cgd

VDS = 125 V
VDS = 200 V

@ Notes : ID = 8.1 A
0
0

10

15

20

QG , Total Gate Charge [nC]

25

30

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IRF634A
Fig 7. Breakdown Voltage vs. Temperature

Fig 8. On-Resistance vs. Temperature

3.0

RDS(on) , (Normalized)
Drain-Source On-Resistance

BVDSS , (Normalized)
Drain-Source Breakdown Voltage

1.2

1.1

1.0

0.9

0.8
-75

@ Notes :
1. VGS = 0 V
2. ID = 250 A
-50

-25

25

50

75

100

125

150

2.5

2.0

1.5

1.0
@ Notes :
1. VGS = 10 V
2. ID = 4.05 A

0.5

0.0
-75

175

-50

-25

TJ , Junction Temperature [oC]

25

50

75

100

125

150

175

TJ , Junction Temperature [oC]

Fig 9. Max. Safe Operating Area

Fig 10. Max. Drain Current vs. Case Temperature

10

ID , Drain Current [A]

Operation in This Area

is Limited by R DS(on)
10 s
100 s
1 ms

101
10 ms
DC
100
@ Notes :
1. TC = 25 oC

10-1

10-2 0
10

2. TJ = 150 oC
3. Single Pulse
101

0
25

102

50

75

100

Tc , Case Temperature [oC]

VDS , Drain-Source Voltage [V]

Thermal Response

Fig 11. Thermal Response

100

D=0.5
@ Notes :
1. Z J C (t)=1.69 o C/W Max.
2. Duty Factor, D=t1 /t2
3. TJ M -TC =PD M *Z J C (t)

0.2
0.1
-1

10

0.05
0.02
0.01

PDM

single pulse

t1
t2

Z JC(t) ,

ID , Drain Current [A]

102

10- 2 - 5
10

10- 4

10- 3

10- 2

10- 1

t1 , Square Wave Pulse Duration

100

[sec]

101

125

150

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IRF634A
Fig 12. Gate Charge Test Circuit & Waveform

Current Regulator

VGS

Same Type
as DUT

50k

Qg

200nF

12V

10V

300nF

VDS

Qgs

VGS

Qgd

DUT
3mA

R1

R2

Current Sampling (IG)

Resistor

Charge

Current Sampling (ID)

Resistor

Fig 13. Resistive Switching Test Circuit & Waveforms

RL
Vout

Vout

90%

VDD

Vin

( 0.5 rated VDS )

RG
DUT
Vin

10%

10V
td(on)

tr

td(off)

t on

tf
t off

Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms

BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD

LL
VDS
Vary tp to obtain
required peak ID

BVDSS
IAS

ID

RG

C
DUT

ID (t)

VDD

VDS (t)

VDD

10V
tp

tp

Time

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IRF634A
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

+
VDS
--

IS
L
Driver

VGS
RG
VGS

VGS
( Driver )

Same Type
as DUT

VDD

dv/dt controlled by RG
IS controlled by Duty Factor D

Gate Pulse Width

D = -------------------------Gate Pulse Period

10V

IFM , Body Diode Forward Current

IS
( DUT )

di/dt

IRM
Body Diode Reverse Current

VDS
( DUT )

Body Diode Recovery dv/dt

Vf

Body Diode
Forward Voltage Drop

VDD

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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification

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Definition

Advance Information

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In Design

This datasheet contains the design specifications for

product development. Specifications may change in
any manner without notice.

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First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

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This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

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This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

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