Академический Документы
Профессиональный Документы
Культура Документы
NOTICE
NOT MEASUREMENT
OF CHANGE
SENSITIVE
THIS HANDBOOK IS FOR GUIDANCE ONLY DO NOT CITE THIS DOCUMENT AS A REQUIREMENT
1
e
MIL-HDBK-217F
NOTICE 2
28 February 1995
MILITARY HANDBOOK
RELIABILITY PREDICTION OF ELECTRONIC EQUIPMENT
.
r
Date
[ 2 December 199I
iv
v
vi
vii
.,.
Vlll
1-1
1-2
2-1
2-2
2-3
2-4
2-5
2-6
I
1
,
vii
New Page
1-1
9.7
r
v
,
New Page
5-3
5-4
5-5
5-6
5-9
5-1o
5-23
5-24
I
10 July 1992
2 December 1991
2 December
6-1
6-2
7-3
7-4
2 December
1991
6-1
1991
6-2
7-3
7-4
1-
December
Deoember
Deoember
Daoember
December
Deoember
1991
1991
1991
1991
1991
1991
1
1
10 Ju~ 1992
Reprinted without change
2 December 1991
2 IxoWnber 1991
10 Ju& 1992
Reprinted without change
2 Deoember 1991
2Deoember1991
Reprinted without change
2 December 1991
2 Deoember 1991
Reprinted without change
11-4
11-4, 11-5
12-1
12-1
2 December
12-2
11-1
11-1
11-2
11-!?
..-
11-2
11-3
1~.p
. .
12
2
2
I2
12
12
2 December
2 December
[ 2 C)ecember
I 2 December
! 2 December
2 December
New Paae
2-8
53
54
5-5
5-6
5-9
5-1o
5-23
5-24
2 Deoember 1991
New Page ~
21
2-2
2-3
.
2-4
2-5
2-6
Date
2 December 1991
Reprinted without charme
2 Deoember 1991
I 2 December 1991
I 2 Deoember 1991
I 10 Julv 1992
. . .
..
-.
December
1991
1991
1991
1991
1991
1991
1991
1991
I
4
,
d
MI1-HDBK-217F
NOTICE 2
New Page(s)
I
r
Superseded
Date
12-3
12-3
12-4
12-5
13-1
13-2
---
12-4
12-5
13-1
13-2
---
16-4
17-1
Appendix A
C-3
10 JUIY 1992
I 2 December
2 December
2 December
2 December
- ?ecember
1991
1991
1991
1991
1991
z Uecember
1991
2 December 1991
2 December 1991
2 December 1991
i
New Page
17-1
c-4
Date
Page(s)
c-3
c-4
2 December
2 December
2 December
] 2 December
1991
1991, 10 July 1992
1991
1991
2.
Retain the pages of this notice and insert before the Table of Contents.
3.
Holders of MIL-HDBK-217F will verify that page changes and additions indicated have been
entered. The notice pages will be retained as a check sheet. The issuance, together with
appended pages, is a separate publication. Each notice is to be retained by stocking points until
the military handbook is revised or canceled.
Preparing Activity:
Air Force -17
Custodians:
Army - CR
Navy - EC
Air Force -17
Review Activities:
Army - Ml, AV, ER
Navy - SH, AS, OS
Air Force-11,13,
15, 19,99
AMSC NIA
DISTRIBUTION
STATEMENT
----
A: Approved
=,
unlimited.
I-
r____
MIL-HDBK-217F
2 DECEMBER
1991
SUPERSEDING
MIL-HDBK-217E, Notice 1
2 January
1990
MILITARY HANDBOOK
RELIABILITY PREDICTION OF
ELECTRONIC EQUIPMENT
AMSC NIA
DISTRIBUTION
STATEMENT
Ad Approved
tinllmtted
MIL-HDBK-217F
DEPARTMENT
OF DEFENSE
WASHINGTONDC
20301
RELIABILITY
1, This standardization
with the assistance
2.
3.
PREDICTION
OF ELECTRONIC
handbook
was developed
of the military departments,
EQUIPMENT
by the Department
of Defense
federal agencies, and industry.
on reliability
periodically
to
and currency.
Beneficial
comments
(recommendations,
additions,
deletions)
and any
pertinent
data which may be of use in improving this document
should be
addressed to: Rome Laborato@ERSR,
Attm Seymour F. Morris, 525 Brooks
13441-4505,
by using
the
self-addressed
Rd.,
Griffiss
AFB,
NY
Standardization
Document
Improvement
Proposal (DD Form 1426) appearing
at the end of this document or by letter.
II
,.. .-.
.- .. -...,
-.-- ___
__
..
--.
-----
al..
-A--
I-*A
-*..A;a-
MIL-HDBK-217F
TA8LE
SECTION
1.1
1.2
1.3
OF CONTENTS
1: SCOPE
Purpose ................... ..... .... .... .. .. ...... ... ... ......... .. .. .... .................. ......... .... ........ ... .... ..
Application . ......... ....... ....... ...... .. ... ... ...... ........ ..... .............. ... .... .......... ............ ... .... ..
Computerized
Reliability Prediction .. .... .. ........ ... ..... ...... ........ .... ....... ....... ........... .... ..
REFERENCE
2-1
SECTION
2:
SECTION
3.1
3.2
3.3
3.4
3:
INTRODUCTION
Reliability Engineering ... .... ...... . .... ... ....... ........ .... .. .... ............... .......... ... .... .... .... .... ..
The Role of Reliability Prediction ........... ............................................................. .... ..
Limitations of Reliability Predictions ....... ....................... ........................... .................
3-1
3-1
3-2
3-2
SECTION
4:
4-1
5.2
5.3
5.4
5.5
5.6
5.7
5.8
5-1
5-3
5-4
5-7
5-8
5-9
5-1o
5-11
513
5.9
5-14
5.10
5-15
5.11
TJ Determination,
5-17
5.12
TJ Determination,
5-18
5.13
Examples ...............................................................................................................
5-20
RELIABILITY
5:
SECTION
5.1
DOCUMENTS
1-1
1-1
1-1
ANALYSIS
EVALUATION
MICROCIRCUITS,
6:
DISCRETE
SEMICONDUCTORS
Discrete Semiconductors,
Introduction ... . ....... ... .. .. ......... ...... ................... ....00..... ... ..
Diodes, Low Frequency ..... ..... .. .. ... .. .... ... ... ..... .... .. ............ ........... ...... .... ....... .........,
Diodes, High Frequency (Microwave, RF) . ....... ..... .... ...... ..................... ... .... .... .... .... ..
Transistors, Low Frequency, Bipolar ..... ... .... .... .... .. ....... ..... ..................... ....... .... . .....
Transistors,
Low Frequency, Si FET ...... ........ ....... ...................0................................
Transistors,
Unijunction ........... .. ............ ................ ................................. ....... .... ......
Transistors, Low Noise, High Frequency, Bipolar ........... ... O.*......**.*.. ....... ......... .... ... .
Transistors,
High Power, High Frequency,
Bipolar .......0..... ....................... .................
Transistors, High Frequmcy, GaAs FET .. .... ..... .
SECTION
6.0
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
6.9
6.10
6.11
6.12
6.13
6,14
Laser Diode ... . ....... ....... ........... .. ......... .................. .... ... ... .... . ........ .
................ ..... ... .... .. ... ... ........ .... .. ..... ....... .............. ... ........... ..........
6-1
6-2
6-4
6-6
6-8
6-9
6-10
6-12
6-14
6-16
6-17
6-19
6-20
6-21
6-23
Example ...... ........................ .... ..... .... ... ... ....... .. .... ................ .................. . ...... . .........
6-25
. . . . . . . ...0.
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . .
. . . . . . ...0...
Optoelectronics,
Detectors,
Isolators,
6.15
. . . . . . . . . . . . .
. . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . ..*......
,,
.,
. 0......,,
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
...
Ill
--I
MIL-HD8K-217F
NOTICE
TABLE
OF
CONTENTS
7-1
TUBEs
7:
................ .......... ............. .. .................. .... .....
All Types Except ?WT and Magnetron
Traveling
Wave ................................... ............... ......... .................... ........ ................
Magnetron ............ ... ............ .............. ....... ................. .. ....!..... ... ....... ....... ...............
sECTION
7.1
7.2
7.3
7-3
7-4
8-1
8-2
8-3
8-4
8-5
LASERs
8:
introduction ............ ..... ....... ...... .............. ............... ..... ........ ... .... .. .... ........ ....... ...... .
......... ....... ....... ..... ....... ....... .................. .. .............. ........ ... .... ...
Helium and Argon
.. ........ ....... .. ........ ............ ...... ... .......... .. .................. ......... ..
Carbon Dioxide, Sealed
............ .... ....... ......................................... ...... ....... ..........
Carbon Dioxide, Flowing
........ ..... ..................... .... ... ............ .............. ...
Solid State, ND:YAG and Ruby Rod
SECTlON
8.0
8.1
8.2
8.3
8.4
sECTION
9.1
RESISToRs
9:
Resistors . ... .......... ..... ........ ...... ........ ....... .................... ....... .... .... .. ......o=~.
.. ...-....
9-1
sECTION
CAPACITORS
10:
Capacitors ............ .... ... ...... .. ............... ... ...... ................ ......... ....*.... ......0.... ....... ....
.. ...... ... ...... ........ ............... ......... ........... ........... ..... . .... ........... .
Capacitors,
Example
10-1
10-6
sECTIO~
11.1
11.2
11.3
INDUCTIVE
DEVICES
11:
........ ..... ..... ...... .... .... ....... ....... .............. ..................... ................. ...... .
Transformers
Colh,.. . . ....... ..... ... .................... ........ ............
..................
..................................
..........
.............
......... ...... ..........
... ......... ...
.. .
Determination
of l-lot Spot Temperature
11-1
11-3
11-4
sECTlol
12.1
12.2
12.3
ROTATING
DEVICES
12:
Motors . .. ............. .... ............. ... .... .. ...... ..................... ............*.* ... .. ...... .................
12-1
10.1
10.2
12-4
12-5
sECTIO
13.1
13.2
RELAys
Mechanical .. ............. ........ ...... .... ... ..................... ..... ................. ...........0..... ..... ........
.......... ........ ................ ................ ... .......................... ... ...
Solid State and Time Delay
13-1
13-3
sECTlc )N
14.1
14.2
SWITCHEs
14:
Sw[tche . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...*... ....o...~ . . . . . . . . . . . . . . .
Circuit Breakers ................. ..... ..... ...........0..,,..,.. . .......... ....... .... ... ...... .......... ... ..
14-1
14-2
SECTI( )N
15.1
CONNECTORS
15:
...... ........ ........ .... ...... ................. ... .......... ..... .... .. ......... .... .. ....
Connectors,
General
. ..... ...... .... ... ...... .............. .............. .......*.... ...*...*** .. *..*.*.*. .....
Connectors,
Sockets
13:
15.2 )
15-1
15-3
16-1
16-2
INTERCONNECTION
ASSEMBLIES
......... .................. ........ .. .....
sECTl~ ON 16:
Interconnection
Assemblies with Plated Through Holes ................... ......................
16. I
Interconnection
Assemblies,
Suflace Mount Technology
16.: ~
17-1
SECTI ON
17. 1
CONNECTIONS
17:
...... ............ ....... ....... .... ........................ .................
Connections
SECT! ION
18. 1
METERS
Meters, Panel .................................!....... .................................................................
18-1
SECT ION
19 .1
QUARTZ CRYSTALS
19:
.................................................
Quartz C~sta\s .....................................................
19-1
. . ..0......
. . . . . . . . . . . . . . . . . .
18:
Supersedes
page w of Revtslon
Iv
>
--1
-----
--
- -
--
-n
l-l
--l
--,
..*
.Tc ,
MIL-HDBK-217F
NOTICE 2
TABLE
OF
CONTENTS
SECTION
20.1
LAMPS
20:
Lamps .. . ..... .. .......... .............. ........... .... .... .... ....................... .. ...... ... .... .... ... .............
20-1
SECTION
21.1
ELECTRONIC
FILTERS
21:
Electronic
Filters, Non-Tunable ........ ... ........ ......... ................................................... .
21-1
SECTION
22.1
FUSES
22:
Fuses. . .... .. .... ...... ................ ......... .. ... ........ ..... .... ......... .... .... ..... ....... .... .... .............
22-1
SECTION
23.1
MISCELLANEOUS
PARTS
23:
Miscellaneous Parts ............. ... .......... .. ............... .... ........ ..... ....... .... .... .... ... .. ........ ....
23-1
A-1
APPENDIX
A:
PARTS
COUNT
RELIABILITY
APPENDIX
B:
VHSIC/VHSICOLIKE
APPENDIX
C:
BIBLIOGRAPHY
AND
3-1:
3-2:
4-1:
6-1:
6-2:
CMOS
(DETAILED
MODEL)
OF
B-1
c-1
TABLES
3-3
3-4
4-1
6-23
6-24
LIST
Figure 5-1:
Figure 8-1:
VLSI
. .................. ... .... ... ................. ........ ...... .... .... ...... ...............
LIST
Table
Table
Table
Table
Table
PREDICTION
OF
FIGURES
Cross Sectional View of a Hybrid with a Single Multi-Layered Substrate .......... .... ..
Examples of Active Optical Suffaces . ........... ... ................ ............ ..... ... ....... ..... ...
5-18
8-1
V
Supersedes
,.. . -
racinclucl
page v of Revision
I VLRY
rlmllllulk
F
I IWUIIIICIIIICLIL
~ a IVusw
M! L-HDBK-217F
NOTICE 2
FOREWORD
1.0
THIS
HANDBOOK
NOT BE CITED
AS A
HAVE
TO COMPLY.
IS
FOR
GUIDANCE
IF
REQUIREMENT.
MIL-HDBK-217F,
Notice
2 provides
the
study (see Ref. 37 listed in Appendix C):
b
Revised
resistor
and capacitor
IT
changes based
following
models,
THIS
HANDBOOK
SHALL
CONTRACTOR
DOES
NOT
ONLY.
IS, THE
including
A revised Traveling Wave Tube model based upon data supplied by the Electronic Industries
Association Microwave Tube Division.
This further lowers the calculated failure rates beyond
the earlier modifications
made in the base document (MIL-HDBK-217F,
2 December 1991).
Revised
the Fast Recove~
reevaluation of Ref. 28.
surface
Notice
2.0
MIL-HDBK-217F,
errors in the basic F Revision.
mounted
Power
1, (10 July
chip devices.
Rectifier
1992)
base
was
failure
issued
rate
downward
to correct
minor
based
New failure rate prediction models are provided for the following
typographical
document),
(2 December
1991) provided the
MIL-tiDBK-217F,
(base
3.0
changes based upon recently completed studies (see Ref. 30 and 32 listed in Appendix C):
1.
on
nine major
following
classes
of
microcircuits:
Monolithic
Bipolar
Monolithic
Monolithic
(including
Controllers)
Monolithic
Monolithic
Monolithic
GaAs
Hybrid
Magnetic
Surface
Bipolar
MMIC
Gate/Logic
Array Devices
Array Devices
Microprocessor
Devices
Devices
Microcircuits
Bubble
Acoustic
Memories
Wave Devices
new prediction
models for bipolar and MOS
The 2 December
1991 revision provided
up to 60,000,
linear microcircuits
with up to 3000
microcircuits
with gate counts
and co-processors
up to 32 bits,
transistors,
bipolar and MOS digital microprocessor
memory devices with up to 1 million bits, GaAs monolithic microwave
integrated circuits
(MMICS) with up to 1,000 active elements,
and GaAs digital ICS with up to 10,000
The C, factors
have been extensively
revised to reflect new technology
transistors.
dewces with Improved reliability, and the activation energies representing
the temperature
sensltwlty of the dice (nT) have been changed for MOS devices and or memories
The
Supersedes
wlBaiaKa
Ufi
II M1iw
~av~
F, NotIce 1
Vll
MIL-HDBK-217F
NOTICE 2
FOREWORD
C2 factor remains
unchanged
Handbook
version,
but includes
pin grid
arrays and surface mount packages using the same model as hermetic, solder-sealed
dual
New values have been included for the quality factor (XQ), the learning
in-hne packages.
factor
factor
(nE).
The model
for hybrid
microcircuits
has
3.
The reformatting
4.
A reduction
5.
A revised
6.
Rewsed
models for
Industries Association
in the number
failure
and Very
of environmental
Like)
factors
Resistors.
TWS
and Klystrons
based
Microwave Tube Division.
on data
supplied
by the
Electronic
MIL-HDBK-217F
NOTICE 2
1.0
SCOPE
- This handbook
Is for guidance
only and shall
not be cited
as a
Purpose
1.1
requirement.
ff it la, the contractor
does not have to comply
(see Page 1-2).
T he
purpose of this handbook is to establish and maintain consistent and uniform methods for estimating
the inherent reliability
(i.e., the reliability of a mature design) of military electronic
equipment
and
systems.
It provides a common basis for reliability predictions during acquisition programs for military
It also establishes a common basis for comparing and evaluating
electronic systems and equipment.
The handbook is intended to be used as a tool
reliability predictions of related or competitive designs.
to increase the reliability of the equipment being designed.
1.2
Appllcatlon
- This handbook
contains two methods of reliability
prediction
- Part Stress
Analysis in Sections 5 through 23 and Parts Count in Appendix A. These methods vary in degree
of information needed to apply them. The Parl Stress Analysis Method requires a greater amount of
detailed information and is appl=ble
during the later design phase when actual hardware and circuits
are being designed. The Parts Count Method requires less information, generally part quantities,
quallty level, and the application environment. This method is applicable during the early design phase
In general, the Parts Count Method will usually result in a more
and during proposal formulation.
consewative
estimate (i.e., higher failure rate) of system reliability than the Parts Stress Method.
Supersedes
page
1-1
of Revision
1-1
MI L-I-IDBK-217F
NOTICE 2
1.0
SCOPE
COMMANDER,
to s~
printing
Prior
for
be made:
Point
the
ACrOSS
EZIS
lat.
the
cover
HAZUX)BOOK
subject
aotico
the
ard tistrtitia,
in
BIG
to
XS FOR ~
tha
follas
s.
mm=
Redictim
DoD
- Au
of
Six@O
Stock
nwt
additions
bert
CAM:
mmrm~s
-Y.
mcunENT~A~
xn the FOREWORD (Page vii of Notice 2 ) , ~agr~h
THIS HANDBOOK 1S POR GUIDAN= ONLY. msEANDBoox~~
~R
IFrrxs,
m
BE CXTZD AS A ~.
HAVE
RL/ERsR,
-li~ili~
Notice 2 to ~-xDBK-217F,
Elecwodc
lz@gX=t
, EOjact
REU-0074
SUBJECT:
R-
1.0:
M
mEs NOT
COMPLY.
MS
entry for
the SCOPE* pua4m@
1.1 (~e)
:
handbook is for guibce
only
and shall not be citd
as a
the contrmtor
&e8 not have to
If it ia,
requir~t.
coa@y .
Add
an
thb
r~
Waltez
B.
Be%
+
Chaiman,
Defense Standada
reQueat , plea-
, 11
=mrQV--t
Council
cc :
OVSD(A&T)~~&E/SE,
Mr. M. Zsak
New Page
1-2
-.
Ma
MIL-HDBK-217F
NOTICE 2
2.0
REFERENCE
DOCUMENTS
SECTION #
SPECIFICATION
10.1
MIL-C-5
M! L-R-l 1
9.1
MIL-R-19
9.1
MIL-C-20
10.1
MIL-R-22
9.1
MIL-C-25
10.1
MIL-R-26
9.1
MIL-T-27
11.1
MIL-C-62
10.1
Capacitor, Fued
MIL-G81
10,1
MIL-C-92
10.1
MIL-R-93
9.1
MIL-R-94
9.14
MIL-V-95
23.1
W-L-1 11
20.1
W-C-375
14.5
W-F- 1726
22.1
W-F-1814
22.1
MIL-C-3098
9.1
MIL-C-3607
5!1
Specifications
MIL-C-3643
Supersedes
51
-- 3..
for
tiz~
2-1
a
MIL-HDBK-217F
NOTICE 2
2.0
REFERENCE
DOCUMENTS
MIL-G3650
15.1
MIL-C-3655
15.1
2-2
MIL-S-3786
14.3
MIL-S3950
14.1
MIL-G3965
10.1
MIL-C+O15
15.1
MIL-F-5372
22.1
MIL-S-5594
14.1
MIL-R-5757
13.1
Relays, Electromagnetic,
MIL-R-6106
13.1
ML-L-6363
20.1
Lamp, Incandescent,
Specification for
MIL-S-8805
14.1, 14.2
MIL-S-8834
14.1
MIL-S-8932
14,1
Switches,
MIL-S-9395
14,1
MIL-S-9419
14.1
MIL-M-10304
18.1
MIL-R-10509
9.1
MIL-GI0950
10,1
MIL-C-11OI5
10.1
MlL-C-l 1272
10.1
Supersedes
MIL-HDBK-217F
NOTICE 2
2.0
10.1
MlL-C-l 1693
REFERENCE
DOCUMENTS
Capacitor,
Feed Through, Radio Interference Reduction AC and DC,
(Hermetkally Sealed in Metal Cases) Estabiishd
Reliability, General Specificatbn for
and Nonestablished
MlL-R-l 1804
9.1
MIL-S-12211
14,1
Switch, Pressure
MlL-S-l 2285
?4.1
Switches, Thermostatic
MIL-S-12883
15.3
MIL-G12889
10.1
M!L-R-12934
9.1
MIL-S-13484
14.1
Switch, Sensitive:
MIL-C-13516
14.2
MIL-S-13623
14.1
MIL-R-13718
13.1
Reiays, Electromagnetic
MIL-S-13735
14.1
Switches, Toggle: 28
MIL-G14409
10.1
MIL-F-15160
22.1
MIL-S-1S291
14.1
MIL-C-15305
11.2
MIL-G15370
15.1
MIL-F-15733
21.1
MIL-S-15743
14.1
Switches,
MIL-G18312
10.1
Supersedes
21.1
24 Volt DC
volt DC
Rotary, Enclosed
Specification for
MIL-F-18327
Filter, High Pass, Low Pass, Band Pass, Band Suppression and Dual
Functioning, General Specification for
2-3
tvllL-HDBK-217F
NOTICE 2
2.0
REFERENCE
DOCUMENTS
ML-R-18546
9.1
MlL-S-l 9500
6.0
MIL-R-19523
13.1
Relays, Control
MIL-R-19648
13.1
MIL-G19978
10.1
MIL-T-21038
11.1
MIL-G21097
15.1
MIL-s-212n
14.1
MIL-G21617
15.1
MIL-R-22097
9.1
MIL-S-22614
14.1
MIL-R-22664
9.2
MIL-S-2271O
14.4
Switches, Sensitive
Resistor, FMed, Film, Insulated, General Specifioatiin
Switches, Code Mcating
for
In-1ine
2-4
MIL-S-22865
14,1
MIL-G22992
15.1
MIL-C23163
10.1
Capacitors, Fixed or
Specification for
MIL-CX23269
10.1
MIL-R-23285
9.1
MIL-F-23419
22.1
MIL-T-23648
9.1
Variable,
Vacuum or Gas Dielectric, General
MS-24055
15.1
Connector, Plug-Receptacle,
Female, 7.5 Amps
MS-24056
15.1
Connector, Plug-Receptacle,
7.5 Amps
Supersedes
MIL-HDBK-217F
NOTICE 2
2.0
REFERENCE
DOCUMENTS
MIL-C-24308
15.1
MIL-S-24317
14,1
MIL-C-25516
15.1
MIL-C-26482
15.1
ML- C-26500
15.1
9.1
MIL-R-27208
and hlon-l!luminated),
Specificatmn for
MIL-C-28731
15.1
MIL-C28748
15.1
MIL-R-28750
13.2
MIL-C-28804
15.1
MIL-G28840
15.1
MIL-M-3851O
5.0
15.3
MIL-S-385=
MIL-H-38534
5.0
Hybrid Micmcirdts,
MIL-I-38535
5.0
Integrated Wcuits
SpedficatiOn for
MIL-G38999
15.1
MIL-G39001
10.1
MIL-R-39002
9.1
MIL-C-39003
10.1
Supersedes
General Specification
2-5
MIL-HDBK-217F
NOTICE 2
2.0
REFERENCE
DOCUMENTS
2-6
MIL-R-39005
9.1
MIL-G39006
10.1
MIL-R39007
9.1
MIL-R-39008
9.1
MIL-R-39009
9.1
MIL-G3901O
11.2
MIL-C-39012
15.1
MILC-39014
10.1
MIL-R-39015
9.1
MIL-R-39016
13.1
MIL-R-39017
9.1
MIL-C-39018
10.1
MIL-G39019
14.5
MIL-C-39022
10.1
MIL-R-39023
9.1
MIL-R-39035
9.1
MIL-S-45885
14.1
Switch, Rotary
MIL-C-49142
15.1
MIL-G55074
15.1
MIL-P55110
15.2
MIL-R 55182
91
Resistor,
FIxd,
for
Supersedes
MII--HDBK-217F
NOTICE 2
2.0
REFERENCE
DOCUMENTS
MIL-C-55235
15.1
MIL-C-55302
15.1
MIL-A-55339
15.1
MIL-R-55342
9.1
MIL-C-55365
10.1
MIL-S-55433
14.1
MIL-C-55514
10.1
Capacitors, Freed, Plastic (or Metallized Plastic) Dielectric, DC or DCAC, In Non-Metal Cases, Established Reliability, General Specification
for
)
MIL-G55629
14.5
MILT-55631
11.1
MIL-G55681
10,1
15.1
Connedor, Electriil,
MIL-S-81551
14.1
MIL-C-81659
15.1
MIL-S-82359
14.1
MIL-(X3383
14.5
MIL-G8151
and Aaessories
MIL-R-83401
9.1
MIL-C-83421
10,1
11.2
MIL-C-83500
10,1
MIL-S-83504
14,1
MIL-C-83513
15.1
MIL-C+3446
New Page
2-7
_-e_-.
----
..
--
--==a===.a
.-A._...._.
- .. ___
. ____ ____
MIL-HDBK-217F
NOTICE 2
2.0
REFERENCE
DOCUMENTS
MIL-C-83515
15.1
Connectors, Telecommunication,
for
MIL-R-83516
13.1
MIL-C-83517
15.1
MIL-R-83520
13.1
MIL-G83527
15.1
13,1
Relays, Electromagnetic,
for
MIL-C-83723
15.1
M!L-R-83725
13.1
MIL-R-83726
13.1, 13.2,
13.3
MIL-S-83731
14.1
MIL-G83733
15.1
Relays, Hybrid and Solid State, Time Delay, General Specification for
for
15.3
MIL-M5028
15.1
STANDARD
MIL-STD-756
MIL-STD-683
MIL-STD-975
MIL-STD-1547
MIL-STD-1772
Copies
functions
of specifications
and standards
required
should be obtained from the contracting
and Processes
by Contracbrs
in connection
activity or as directed by the
with specific
acquisition
copies are also available (without charge) upon written request to:
Standardization
Oocument Order Desk, 700 Robim AVe , Wilding ~, section D,
Ph(ladelphla, PA 19111-5094, (215) 697-2667
2-8
New Page
,-- -----
MIL-HDBK-217F
NOTICE 2
MICROCIRCUITS,
5.1
GATE/LOGIC
ARRAYS
AND
MICROPROCESSORS
DESCRIPTION
1. Bipolar Devices, Digital and Linear Gate/Logic Arrays
2. MOS Devices, Digital and Linear Gate/Logic Arrays
3. Field Programmable Logic Array (PLA) and
Programmable
Array Logic (PAL)
4, Microprocessors
kp = (cl fi~ + C2fiE)
~QfiL
ailures~l
06
Hours
T
I
t
101
to
c,
.010
100
to
to
to
to
101
301
1,001
.020
.040
.080
.16
.29
1,000
1,001 to
3,000
3,001 to 10,000
10,001 to 30,000
30,001 to 60,000
NOTE:
Linear
No, Transistor
.010
.020
.040
.060
100
300
1,000
10,000
E=F==7
Up to 8
.060
,14
Up to 16
.12
.28
Up to 32
.24
,56
c,
up to 500
.00085
501 to 1,000
2,001 to 5,000
5,001 to 20,000
.0017
.0034
.0068
For CMOS gate counts above 60,000 use the Vi+ SIC/VHSIC-Like
rocm
Die Complexi~ Failure Rate - Cl
MO.S
c,
.021
.042
PLA/PAL
No. Gates
c,
.010
up to 200
201 to 1,000
1,001 to 5,000
.010
.020
.040
.060
100
300
1,000
10,000
Linear and Digital Gate/Logic Array Die Gomplex~ Failure Rate -Cl
Digital
No. Gates
1 to
1 to
101 to
301 to
1,001 to
.0025
.0050
.010
.020
.040
.080
100
to
101 to
1,000
1,001 to
3,000
3,001 to 10,000
10,001 to 30,000
30,001 to 60,000
1
c,
modei In Section
5.3
Section 5.8
C2
section 5,9
7tE, flQ, XL
Section 5.10
Supersedes
- _=...= ------
page
_____ -_ _
_
5-3
of Revision
.
5-3
F
All GAQ =*Q AW -w......-.
baw. - -....-=
--
----
MIL-HDBK-217F
5.2
MEMORIES
MICROCIRCUITS,
DESCRIPTION
1. Read Only Memories (ROM)
2. Programmable
Read Only Memories (PROM)
3. Ultraviolet Eraseable PROMS (UVEfROM)
4. Flash, MNOS and Floating Gate Electrically
Eraseable PROMS (EEPROM).
Includes both
d
floating gate tunnel oxide (FLOTOX) and texture
polysilicon type EEPROMS
5. Static Random Access Memories (SRAM)
R
~vnamic Random Access Memories (DRAM)
_=.
w.
Acyc) XQ XL
kp=(C1XT+C2YCE+
Die Complex~
Failure Rate - Cl
MOs
Memory
Size, B (Bits)
UVEPROM*
EEPROM,
mPROM
DRAM
(MOS &
BiMOS)
.00085
.0017
.0034
.0068
.0013
.0025
.0050
.010
.0078
.016
.031
.062
.00065
up to 16K
16 K< BSWK
64K<BS2%K
256K < B s IM
.0013
.0026
.0052
t
,
Bipolar
SRAM
PROM,
ROM
05 Hours
Failures/l
ROM,
PROM
.0094
.019
.038
.075
SRAM
.0052
.011
.021
.042
Total No. Of
prograrnmin9
Programming
Cycles
\OM Life, C
OV&%PF
Textur8d-
Cycles Over
~EPROM Life, C
Flotoxl
.00070
.0014
200< CS 500
500<cs1K
1K<CS3K
3K<CS7K
7K<CS15K
.0034
.0068
.020
.049
.10
100
100< c s 200
Pol?
Textured-Poiy
I
.14
.20
.68
1.3
2.7
3.4
.0097
~E,
Al=
2.
No underlying
equation
5.8
section 5.9
C2
1
Parametem
Refer to
Section
XT
k Cyc
1.
2.3
.30
.30
.30
.30
,30
.30
1.1
300K c C s 400K
.014
.023
.033
.061
.14
.30
~Qt
Section
XL
(EEPRoMs
5.10
Page 5-5
only)
for Textured-
Poly.
L ~yc = 0
A2
1
up to 300K
Jp to
NO. Of
Total
MIL-HDBK-217F
NOTICE 2
MICROCIRCUITS,
5.2
EEPROM
MEMORIES
ReadWrite
?bO
Cyc =
All Memo~ Devices Except Flotox and
Textured-Poly
EEPROMS
A*B2
~[
Poly EEPROMS
c=
Al
B, + ~
P*
Page 5-4
Page 5-4
Al
page 5-6
page 5-6
A
Apu
B4
A2
Page 5-5
pie
02-0
02
5-6
Sedion 5.1o
5.1o
Sectiorl
ECC
1
ltQ
2. On-Chip t-tammi~
Options:
Code
fi~~~
= 1.0
%CC
~EcC
= .72
ECC
~~~c
=1.0
= .72
= .66
~EGC = =
3. Two-Needs-One
IW)TES:
1.
2.
If EEPROM
3.
4.
type is unkmw,
assure
Fbtox.
based on an assumed
\
I
5-5
Supersedes
MIL-HDBK-217F
NOTICE 2
5.2
MICROCIRCLJITS,
MEMORIES
II
m
4
iii
+
$!
8
t?
m-
II
t+
Supersedes
5-6
T
:-----
V.-d.
-r.,
MIL-HDBK-217F
NOTICE 2
5.5
MICROCIRCUITS,
HYBRIDS
DESCRIPTION
Hybrid Microcircuits
~=
[z Nc kc] (I + .2zE
Nc
kc
) YCFnQZL
Fail.reN106
Ho.m
Component
Component
The general procedure for developing an overall hybrid failure rate is to calculate an individual failure rate
for each component type used in the hybrid and then sum them. This summation is then modified to
account for the overall hybrid function (XF), screening level (@, a~ matUritY (XL). The hybfid Packa9e
failure rate is a function of the active component failure modified by the environmental factor (i.e., (1 + .2
~E) ). Onw the component types listed in the folbwing ti3bi8 are considered to contribute S@ItiiCWItly to
the overall failure rate of most h@rids. All other component types (e.g., resistors, inductors, etc.) are
constiered to contribute insignif~ntty to the overall hybrid failure rate, and are assumed to have a failure
rate of zero. This simplificationis valid for most hybrids; however, if the hybrid consists of mostly passive
cornmments then a failure rate should be calculated for these devices. If factorina in other com~onent
.
= Hybrid Case Temperature
for these calculatbk.
aWme ~Q = f, XE1
and
TA
type~,
Determination
of kc
Handbook Section
When Determining
xc
Component Types
5
Microcircuits
Discrete Semiconductors
c2=0~zQ=1~
Smion 5.12, ~p
= 1, TJ as Determined from
= O (for WWC).
10
Capacitors
~=lTA
I?cpl.
NOTE:
tf maximum rated stress for a die is unknown, assume the same as for a discretely package
die of the same type. If the same die has several ratings based on the discrete packaged
type, assume the lowest rating. Power rating used should be based on case temperature
for discrete semiconductors.
Circuit Type
~F
Digital
1.0
1.2
Mcrowave,
2.6
f >1 GHz
5.8
21
~~,
~Q,
~E
I
Refer to Section 5.10
MIL-HDBK-217F
5.6
MICROCIRCUITS,
SAW DEVICES
DESCRIPTION
Surface Acoustic Wave Devices
Environmental Factor - nE
Quality Factor - ZQ
Screening Level
7CQ
.10
practices.
1.0
Environment
GB
~E
.5
2.0
%
Ns
4.0
Nu
6.0
Alc
4.0
IF
5.0
%c
5.0
UF
8.0
RW
8.0
4.0
.50
SF
MF
5-1o
5.0
ML
42
CL
220
MIL-HDBK-217F
NOTICE 2
MICROCIRCUITS,
5.13
-iimr imim
Power Dissipation,
pD (W)
Area of Chip (in.*)
14
No. of Pins
TrFiF
%rFFir
Source
Si Diode
EXAMPLES
.33
.35
.6
.6
.42
Circuit Analysis
.0041
.0065
.0025
.0025
.0022
Equ. 2 Above
eJ~(%NV)
30.8
19.4
50.3
50.3
56.3
Equ. 1 Above
TJ (%)
75
72
95
95
89
Equ. 3 Above
2.
Section 5.1
Because C9 = O;
XT: %WiOn 5.8; XQ, XL Defau~ to 1.0
,
=
B)
c)
cl XT ~Q
XL
Rated
Power=
5W (From Vendor
~ec.
oum
Sheet),
VcE~CE()
= .6,
Linear Application
~
%~T~AnR%ZQXE
~Qt
~E
oefau~
to
1.0
SiliconGeneral
Construction.
P
=
=
=
Supersedes
k) T
% C Q E
(.0038)(6.3)(.29)(1)(1)(1)
Section 6.1;
ZQJ
XE
Defau~
Bonded
to
1.0
5-23
MII--HDBK-2I
7F
NOTICE 2
5.13
MICROCIRCUITS,
F)
G)
EXAMPLES
lb ncv
~Q ~E
(.0028)(1.4)(1)(1)
.0039 Failures/l
Thick Film Resistors, per instructions in Section 5.5, the contribution of these devices is
considered insignificant relative to the overall hybrid failure rate and they may be ignored.
[Z NcLc](l
~E
6.0
Section 5.10
fiF
5.8
Section 5.5
ICQ
Section 5.10
XL
Section 5.10
+.27cE)71F7ypL
(1)(.038)+(1)(.031)+
(2) (.0015)+
(2)
5-24
1.2 Failures/l
(.0015)
(5,8) (l)(1)
06 Hours
Supersedes
MIL-HDBK-217F
6.0
DISCRETE
SEMICONDUCTORS,
INTRODUCTION
The semiconductor
transistor, diode and opto-electronic
device sections present the failure rates on
the basis of device type and construction. An analytical model of the failure rate is also presented for each
The various types of discrete semiconductor devices require different failure rate
device category.
models that vary to some degree. The models apply to single devices unless otherwise noted. For
multiple devices in a single package the hybrid model in Section 5.5 shouid be used.
devices is MlL-S-l
9500.
The
quality levels
The temperature
Ju~tiOn
temperature
should be computed based on worse case power (or maximum power dissipation) and the device junction
to case thermal resistance. Determination of jmctbn temperatures is expiairwd in Section 6.14.
Reference 28 should be consulted for further detailed information on the modeis appearing h!this
sect ion.
6-1
MIL-HDBK-217F
NOTICE 2
6.1
DIODES,
LOW
FREQUENCY
DESCRIPTION
Low FrequenCy Diodes: General Purpose Analog, Switching,
Fast Recovery, Power Rectifier, Transient Suppreswr,
Current
Regulator, Voltage Regulator, Voltage Reference
SPECIFICATION
fvllL-s-19500
Temperature Factor - ~
(Voltage Ragukto
and Curre
TJ (~)
.0038
.0010
.025
.0030
Power Rectifier/Schoflky
power Diode
Power Rectifier with
High Voltage Stacks
Transient SuppressorNaristor
Current Regulator
Vottage Regulator and Voltage
Referencx? (Avalanche
.0050/
Junction
.0013
.0034
.0020
and Zener)
Terrperatum
(General Purrmse Anak
Pov
- XT
Switching,
nsient Su
25
1.0
105
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
1.2
1.4
1.6
1.9
2.2
2.6
110
115
120
125
130
135
140
145
150
155
160
165
170
175
~T =
?J =
6-2
Fast RmvwY,
r sor
T ~ (C)
TJ (oC)
q
Factor
E
exp
3.0
3.4
3.9
4.4
5.0
5.7
6.4
7.2
8.0
((
.3091
9.0
10
11
12
14
15
16
18
20
21
23
25
28
30
32
-
TJ ~ 273
Juncllon Temperature
%T
TJ
%T
25
1.0
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
1.1
1.2
1.4
XT =
It=
bJ
Vottage Reference,
S!?94!a
1.5
1.6
1.8
2.0
2.1
2.3
2.5
2.7
3.0
3.2
3.4
3.7
exp
((
-1925
~)
105
110
115
120
125
130
135
140
145
150
155
160
165
170
175
4.8
5.1
5.4
5.7
6.0
6.4
6.7
7.1
7.5
7.9
8.3
8.7
4
1
-
TJ + 273
3.9
4.2
4.5
1
298
))
I
I
1
298
))
(C)
1
Supersedes
t
MIL-HDBK-217F
NOTICE 2
7.2
TUBES,
TRAVELING
WAVE
DESCRIPTION
Traveling Wave Tubes
~
Failures/l
+pE
Environment
10
;Z
1000
3000
5000
8000
10000
15000
20000
30000
>40000
,1
11
11
11
11
11
12
12
12
13
14
15
17
12
12
12
12
12
13
13
13
14
15
16
18
13
13
13
13
14
14
14
15
15
16
18
20
Frequency (GHz)
6
8
10
4
16 19 24 29
16 20 24 29
16 20 24 29
16202429U@
1720242943@
1720253044U
17212631ti
18 22 26 32
19 23 27 33
20 24 29 35
22 26 32 39
24 29 35 43
\
14
18
42
42
42
61
61
61
~~
S
~y
Factor - ZF
~E
Environment
.5
GB
I
r
GF
GM
7.0
Ns
3.0
10
NU
5.0
Alc
51
56
62
75
83
91
1.5
7.0
IF
6.0
Uc
9.0
UF
k)
11(1.00001)P (1.l)F
SF
MF
11
ML
33
20
Am
06 Hours
c,
.05
500
7-3
Supersedes
-----------*-+-*-
MIL-HDBK-217F
7.3
TUBES,
MAGNETRON
DESCRIPTION
Magnetrons, Pulsed
Lp = kb7r7cc7tE
Failures/l
P(MW)
.01
.05
.1
.3
:
5
.5
4.6
1.9
6.3
10
2.2
2.8
7.2
9.o
12
15
3.1
3.5
4.4
4.9
.5
Pulsed
1
7.6
.1
1.4
10
11
14
16
10
20
24
41
67
34
56
39
48
~
80
17
19
24
26
54
110
130
150
170
210
230
89
100
130
140
:
~
Frequency (GHz)
50
30
40
130
110
91
140
180
200
150
180
220
2@
180
210
260
290
230
2W
310
280
3=
390
~o
410
@
120
60
70
150
210
240
300
170
230
270
330
80
190
90
200
100
220
260
290
370
280
320
400
300
350
430
330
380
470
520
370
420
530
Wo
410
470
580
~o
440
510
830
700
480
550
~o
760 -
Magnetrons:
$-18
b
=
F=
operating
P=
FrequenCy in GHz,
.15 F <100
.01 SP<5
Environment
LMllization Factor - ZI I
Utilization (Radiate HOUN
Filament HoufS)
%U
.44
0.0
.50
.55
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
.61
.66
.72
.78
.83
.89
.94
Environment
~E
GB
1.0
GF
GM
Radiate HourWFilament
Construction
Hours
Factor - nc
7tc
Construction
CW(RatWPower.5~
Coaxial Pulsed
Conventional
7-4
Pulsed
1.0
1.0
5.4
4.0
Nu
47
IF
UF
10
16
12
23
80
ML
133
CL
2000
- nvv
Antfil
ri 7
i
2.0
15
*IC
0,44 + 0.56R
Ns
*UC
Xu =
Factor - nE
MIL-HDBK-217F
NOTICE 2
9.1
Resistor Style
Description
Specification
MiL-R-
RESISTORS
~T Tabie
XS Table
Use
Column:
Use
Column:
Rc
11
.0017
RCR
39008
.0017
RL
22684
.0037
RLR
39017
.0037
RN (R, C Of N)
55182
.0037
RM
55342
.0037
RN
10509
.0037
RD
11804
.0037
WA, XT= 1
RZ
83401
,0019
NIA ns = 1
RB
93
.0024
RB R
39005
.0024
RW
26
(Power TyTw)
.0024
RWR
39007
.0024
RE
18546
.0024
RER
39009
.0024
RTH
23648
.0019
RT
27208
.0024
RTR
39015
.0024
RR
12934
.0024
RA
19
Resistor, Variable,
Temperature)
.0024
RK
.39002
.0024
RP
22
.0024
RJ
22097
.0037
RJR
39035
.0037
RV
94
.0037
RQ
39023
.00 37
RVC
23285
.00 37
Supersedes
Section 9.0-9.17
of Revision
ReiiabMy
Reiiabiiity
N/A, XT=
1 tlrots=~
9-1
MIL-HDBK-217F
NOTICE
RESISTORS
9.1
-
Power Factor - Xp
,
Temperature Factor - XT
-
.95
,88
20
.001
.068
1.1
1.1
.01
.17
30
1.5
1.2
.13
.44
40
1.8
1.3
.25
.58
50
2.3
1.4
.50
.76
60
2.8
1.5
.75
.89
70
3.4
1.6
1.0
1.0
80
4.0
1.7
2.0
1.3
90
100
4.8
1.9
3.0
1.5
110
5.6
2.0
4.0
1.7
6.6
2.1
5,0
1.9
120
7.6
2.3
10
2.5
130
140
8.7
2.4
25
3.5
2.5
50
4.6
100
6.0
10
np
Column 2
Column 1
T(C)
= exp
-Ea
8.6 I7x1O
1
.5
-=
150
))
7.1
Kp - (Power Dissipation)3g
oiumn 1: Ea =.2
olumn 2:
Ea -.08
only be used up to
9-2
Supersedes
-..
of Revision F
MIL-HDBK-217F
NOTICE 2
9.1
Power Stress Factor - nc
Power Stress
Column
Environment
Column
.1
.79
.66
.2
.88
.81
.3
.99
RESISTORS
Factor - n=
Environment
1.0
GB
1,0
GF
4.0
GM
16
Ns
12
Nu
42
.4
1.1
1.2
.5
1.2
1.5
.6
1.4
1.0
AC
18
.7
1.5
2.3
IF
23
.8
1.7
2.8
Uc
31
.9
1,9
3.4
UF
43
RW
63
Column
1: xs s .71e1 1(S)
.50
SF
MF
37
ML
87
CL
1720
ICQ
Quality
Established Reliability Styles
s
.03
0.1
0.3
1.0
Non-Established Reliability
Resistors (Most Two-Letter Styles)
3.0
10
Supersedes
Section 9.0-9.17
of Revision
9-3
MIL-HDBK-217F
NOTICE 2
CAPACITORS
10.1
~p=~nTxcnvx~RfiQ~
EFailures/106
fiT
Description
;apacitor
Style
Spec.
MIL-C-
25
12889
Table -
nC Table -
xv Table -
Use
Use
Use
Colurnm
Column:
Column:
.00037
.00037
.00037
.00051
Cases)
11693
~C)iJfS
n, CQR
19978
Estabkhd
and NonestWishd
Reliability
18312
x-i
%R
~Ked, Metallizd
Papr Plastb or Plastb
@pacitor,
.00037
.00051
.00051
.00051
(P~r,
Film) Dielectrk% Direct Current
(1-iermetkal& Sealed in Metal
Cases)
39022
55514
83421
-i
.00076
.00076
39001
.00076
10950
C8
.00076
11272
CY
.00076
23269
CYR
CM
10-1
Supersedes
I
Ocv
Section
.
10.1 -10.20
m
of Revision
F
ml
Iuw>
16
eal
>1
MIL-HDBK-217F
NOTICE 2
CAPACITORS
10.1
Capacitor
Style
Spec.
MIL-C-
CK
11015
Description
Capacitor, Fixed, Ceramic
Dielectric (General Purpose)
CKR
39014
cC, CCR
20
CSR
CL
nc Table -
Xv Table -
Use
Column:
use
Column:
.00099
Use
Column:
1
.00099
.00099
See
39003
55365
3965
.0020
.00040
%R
Table
.00005
%R
Table
1
.00040
.00040
.000 12
.000 12
.0079
.0060
.0000072
.0060
.00040
39006
83500
39018
L
CE
62
Cv
81
L
Pc
14409
CT
92
Capactior, Vati*le,
(Trimmer)
(%
23183
See
Cathode
cU, CUR
%R
and
55681
n~ Table -
Supersedes
10-2
I
.-
Section
10.1 -10.20
. .
of Revlslon F
MIL-t-iDBK-217F
NOTICE 2
10.1
Temperature
Capacitance Factor
Factor - XT
CAPACITORS
- ~,
(
T(%)
Column
20
%T
Capacitance,
c(~F)
Column 2
.79
.91
Column 1
Column 2
.000001
.29
.04
30
1.1
1.3
.00001
.35
.07
40
1.3
1.9
.0001
.44
.12
50
1.6
2.9
.001
.54
.20
60
1.8
4.2
.01
.66
.35
70
2.2
6.0
.05
.76
.50
80
2.5
8.4
.1
.81
.59
90
2.8
11
.5
.94
.85
100
3.2
15
1.0
1.0
110
3.7
21
1.1
1.3
120
4.1
27
1.2
1.6
130
4.6
35
18
1.3
1.9
140
5.1
44
40
1.4
2.3
150
5.6
56
200
1.6
3.4
1000
1.9
4.9
3000
2.1
6.3
10000
2.3
8.3
30000
2.5
11
60000
2.7
13
-Ea
= W ( 8.617
x10-5
( T + 273
))
Column 1: Ea = .15
Column 2: Ea = .35
T = Capacitor Atiient
Temperature
120000
Column 1: ~
= Cog
Column 2: ~
= C-23
device.
2,
Supersedes
I
Section
1-1
10.1 -10.20
.
of Revision
r
10-3
F
Is-1
t3-
MIL-I+DBK-217F
NOTICE 2
10.1
CAPACITORS
Voltage Stress
Column
Column 2
Column 3
Column 4
Column 5
0.1
1.0
1.0
1.0
1.0
1,0
0,2
1.0
1.0
1.0
1.0
1.1
0.3
1.0
1.0
1.1
1.0
1.2
0.4
1.1
1.0
1.3
1.0
1,5
0.5
1.4
1.2
1.6
1.0
2.0
0.6
2.0
2.0
2.0
2.0
2.7
0.7
3.2
5.7
2.6
15
3.7
0.8
5.2
19
3.4
130
5.1
0.9
8.6
59
4.4
990
6.8
166
5.6
14
Column 1: 7CV=
Column 2:
~ 5+1
.6
()
s
xv =
&
,6
5900
Column 4:
Zv=
Column 5:
%V =
10+1
()
Column 3: xv=
3+1
s=
()
F
~
.6
17+1
3+1
()
9.0
() .5
Operating Voltage
Rated Voltage
Note: Operating voltage is the sum of applied DC voltage and peak AC voltage.
%R
.66
>0.6 to 0.8
1.0
>0.4 to 0.6
1,3
>0.2 to 0.4
2.0
>0.1 to 0.2
2.7
3.3
CR .
10-4
<
Supersedes
MIL-HDBK-217F
NOTICE 2
10.1
Quality Factor - XO
Environment
7rQ
Quality
Established
o
Reliability
CAPACITORS
Factor - KE
Environment
GB
Styles
fiE
1.0
.001
GF
10
.01
GM
20
S,B
.03
.1
.3
M
L
Non-Established
Reliability
Capacitors (Most Two-Letter
Commercial
Level
or Unknown
Styles)
Ns
7.0
Nu
15
AC
12
IF
15
1.0
Uc
25
1.5
UF
30
RW
40
SF
3.0
Screening
10.
.50
MF
20
ML
50
CL
570
NOTE: ~t~tis~reltiil~~l~amfa~re
rate graded (D, C, S, etc.) based on life testing
defined in the applicable military device
specification. This category usually applies only
to three-letter styles with an R suffix.
Supersedes
Section
10.1 -10.20
of Revision
10-5
MIL-HDBK-217F
NOTICE 2
10.2
CAPACITORS,
EXAMPLE
Example
VDC rated capacitor
type CQ09A1KE153K3
is being used in a fixed ground
environment, 50C component ambient temperature, and 200 VDC applied with 50 Vrms @
60 Hz. The capacitor is being procured in full accordance with the applicable specification.
Given:
A 400
The letters CQW in the type designation indicate that the specification is MlL-C-l 9978 and that it is a NonEstablished Reliability quality level. The E in the designation corresponds to a 400 volt DC rating. The
I 53 in the designation expresses the capacitance in picofarads. The first two digits are significant and
the third is the number of zeros to follow. Therefore, this capacitor has a capacitance of 15,000
Based orI the given information the following modei factors are cfetetmined from the tables shown in
Section 10.1.
lb
.00051
XT
1.6
7CV
s=
2.9
s=
$
$
10-6
= ~ ~~c~v
=
%RXQ
.049 Failures/l
DC Volts
200 + dz (50~ . .m
400
= (.00051)(I.6)(.69)
06 Hours
Supersedes
Section
MIL-HDBK-217F
NOTICE 2
INDUCTIVE
11.1
Audio, Power
TF
)LP= ~~xTxQz~
Fai~Ures/l
06 Hours
(F/106 hrs.)
+
lcQ
QualitY
.0054
MIL-SPEc
.014
Lower
1
3
Environment
Fader
- ZE
fiE
Environment
.049
1.0
GB
6.0
GF
.13
IOM Hz)
RF (1OK.
12
GM
5.0
Ns
16
Nu
!:
1 .Z
1.4
1.6
1.8
1.9
2.2
2,4
2.6
2.8
-.
3.1
.-
Ad
4.
7.0
%c
I
1
9.0
UF
24
Am,
t-Ivv
ML
cL
*A
.3U
13
34
610
4.3
4.6
190
-.11
exp ~W-29Et
8.617x
I0
I_
,
1
)){
Supersedes
8.0
IF
3.3
3.5
3.8
180
XT =
I
I
6.0
Alc
30
40
50
60
70
80
90
100
110
120
130
140
150
160
170
.022
Quality Factor - ~
Flyback (C 20 VOM)
TP
Transformer
TRANSFORMERS
DESCRIPTION
sTYLE
SPECIFICATION
MIL-T-27
MIL-T-21038
MIL-T-55631
DEVICES,
11-1
MIL-HDBK-217F
NOTICE 2
INDUCTIVE
11.1
DEVICES,
TRANSFORMERS
Transformer
Characterlstlc
Determlnatlon
Note
MIL-T-27
TF
Example
R
AIL-T-27
Designation
01
Famtiy
Irlsul&dkm
Grade
chS
GA
576
~~
Syrflbd
Audio Transformer:
Pulse Transformer:
22 through 36,54
MI L-T-21038
Example
Designation
TP
MIL-T-21we
Gr*
h.suticxl
xl 1OoBcool
Cbs
MlL-T-5563I.
The Transformers are Designated
with the folbwing Types, Grades and Classes.
Intermediate Frequency Transformer
Radio Frequency Transformer
Discriminator Transformer
Type 1
Type II
Type Ill
Grade 1
Grade 2
Grade 3
Class O
Class A
Class B
Class C
ambient temperature)
Supersedes
11-2
-
z..__.
.
_
=.____
.
-=---.+--_-____>_
page
11-2 of Revision F
._
.
e-
~.
__. __
..
_
MIL-HDBK-217F
NOTICE 2
11.2
COILS
Quality Factor - ~
Inductor Type
DEVICES,
DESCRIPTION
Fixed and Variable, RF
Fixed and Variable, RF, Chip
Molded, RF, Est. Rel.
STYLE
SPECIFICATION
MIL-C-15305
MIL-C-83446
MIL-C-3901O
INDUCTIVE
Quality
F/lo6 Ms.
IIQ
.000030
Variable Inductor
.000050
Temperature
Factor - XT
TH@)
XT
.03
.10
.30
1.0
MIL-SPEC
1.0
Lower
3.0
20
.93
30
1.1
40
1.2
50
1.4
60
1,6
70
1.8
GB
1.0
80
1.9
GF
6.0
90
2.2
GM
100
2.4
110
2.6
120
2.8
130
3.1
140
3.3
150
3.5
160
3.8
170
4.1
*UF
180
4.3
*RW
190
4.6
sF
XT = e)(p
-.11
8.617x
10
-5
Environment Factor - XE
Environment
Ns
Nu
*IC
IF
*UC
1
1
TH~ + 273 -=
~E
12
5.0
16
6.0
8.0
7.0
9.0
24
.50
MF
13
ML
34
CL
610
))
Supersedes
11-3
MIL-HDBK-217F
NOTICE 2
INDUCTIVE
11.3
DEVICES,
DETERMINATION
OF
HOT
SPOT
TEMPERATURE
THS=TA+
1.1 (Am
where:
-$+s
TA
Inductive
AT
Average Temperature
(C)
Temperature
(C)
AT Armoximation
AT= 15C
AT= 35C
Power Loss
Case Radiating Surface Area
3.
Power Loss
Transformer Weight
4.
Input Power
Transformer Weight
(Assumes
A=
800/0 Efficiency)
Wt.
Transformer
w,
= Input Power
Weight
(lbS.)
(W)
NOTE: Methods are listed in prefemd order (i.e., most to least accurate). MIL~-3901 O are microminiature devices with surface areas less than 1 in2. Equations 2-4 are applicable to devices with
surface areas from 3 in2 to 150 in2. Do not include the mounting surface when determining radiating
swface area.
Case
AF
AG
Al-1
AJ
EB
EA
Area (in2)
Case
4
7
11
GB
GA
H5
33
43
42
LB
LA
MB
Area (in2)
18
HA
53
MA
21
23
JB
JA
58
71
NB
NA
FB
25
KB
72
OA
FA
31
KA
84
17-4
Supersedes
#,.
Area @2)
82
98
98
115
117
139
146
MIL-HDBK-217F
NOTICE 2
12.1
ROTATING
DEVICES,
MOTORS
The following failure-rate model applies to motors with power ratings below one horsepower. This model is applicable to
pcdyphase, capacitor start and run and shaded pole motors. hs application may be extended to other types of fractional
horsepower motors utilizing rolling element grease packed bearings. The model is dictated by two failure modes, bearing
failures and winding failures. Application of the model to D.C. brush motors assumes that brushes are inspected and
replaced and are not a failure mode. Typical applications include fans and blowers as well as various other motor
applications. The mode! is based on References 4 and 37, which contain a more comprehensive treatment of motor life
The references should be reviewed when bearing loads exceed 10 percent of rated load, speeds
prediction methods.
exceed 24,000rpm or motor loads include motor speed slip of greater than 25 percent.
The instantaneous failure rates, or hazard rates, experienced by motors are not constant but increase with time. The
over time wrid
T. This time period is
failure rate model in this section is an average failure rate for the motor op-ting
either the system design life cycle (LC) or the time period the motor must last between complete refurbishment (or
replacement).
The model assumes that motors are replaced upon faifure and that an effective constan! failure rate is
achieved after a given time due to the fact that the effective ~ime zero- of replaced motors becomes random after a
, can be treated as a constant failure rate and
significant portion of the population is replaced. The average faikuO rate,
x,
Lz
l.p=
[
A(xB
BaW
A (c)
E
30
40
50
60
55000
35000
2.534-
TA2~:73
10 (
(Hr.)
6.49+06
3.2e+06
1.W+06
8.9e+05
5.oe+05
2.9e+05
1.8e+05
3600
13000
39000
78000
aB
(Hr.)
70
80
90
100
110
120
130
140
22000
14000
9100
6100
4200
2900
2100
1500
1
4500
10 (
2357
,0 [ TA + 273
aB (Hr.)
(Hr.)
1.1Q+05
7.09+04
4*6e+04
3.le+04
2.19+04
1.5e+04
1.09+04
7.5e+03
1
-1
+
)
TA (=)
20-~
+300
1.83]
%/
aB
w
TA
NOTE:
Ambient Temperature
Supersedes
.__ __
(C)
12-1
______ __ -.____
..-_
MIL-HDBK-217F
NOTICE 2
ROTATING
12.1
DEVICES,
MOTORS
L --
and L c Determination
..
1
A and B Determinatbn
Motor Type
k,
aw
aB
1.1
1.9
Electrical (General)
Lcw&
or Q
0-.10
.13
.11 -.20
.15
.21 -.30
.23
.31 -.40
.31
.41 -.50
.41
.51 -.60
.51
55000 Hrs.
.61 -.70
.61
2,9e + 5 Hrs.
,71-.80
.68
.81 -.90
.76
.29
.48
Sensor
Servo
2.4
1.7
Stepper
11
5.4
Example Calculathn
A general purpose elecltial motor is operati~ at
50C in a system with a 10 year desgn life (876W
hours) expedancy,
87600
~fS.
55000
I+rs.
87600
I-trs.
for
.23
(
1.0
>1.0
2.9e + 5 Hrs. =
1.0
1 .e
L& .
aB
f.rg=
aw
.3
1.6
replaced or
refutished.
)
.3
1.9
1.1
%=
[*+
~9.9
ILL
.23
(1. V(2.9e
+ 5)
x0
Supersedes
MIL-1-iDBK-217F
NOTICE 2
12.1
Calculation
ROTATING
DEVICES,
MOTORS
The following equation can be used to calculate a weighted characteristic life for both bearings and windings
hl
hz
+
al
+
a2
h3
+-------
a3
h~
a
where:
a
either ~
h,
Time at le~erature
h*
h3
Time at Temperature
T3
hm
mme at Temperature
Tm
al
Liie at T1
Life at T2
or aw
T1
T, + T3
T~=2$T4=2
T, to T3
T3 + T,
T3
T2
TI
.
-f
hl
II
1
h4
h3
hz
I
Hours
Thermal
Supersedes
(h)
Cycle
12-3
MIL-HDBK-217F
NOTICE 2
12.2
ROTATING
DEVICES,
SYNCHROS
AND
RESOLVERS
DESCRIPTION
Rotating Synchros and Resolvers
Failures/l
kp = &S~NXE
NOT E:
06 Hours
%N
Number of Brushes
~
30
35
40
.0083
.0088
.0095
45
50
55
60
65
.010
.011
.013
.014
.016
70
75
80
.019
.022
.027
%
TF
85
90
95
100
105
110
115
120
125
130
~
+ Atiieti
2.5
3.2
Environment
(z)
2.0
IF
*UC
UF
Size 8 or
smaller
Size 10-16
Size 18 or
Larger
Synchro
1.5
Resolver
2.25
1.5
DEVICE
TYPE
RW
GF
AC
Size Factor - x~
r
fiE
1.0
Tempenture
Factor - ZE
GB
N~
Environment
.oo535expf-)8
Frame Ternpwatum
1.4
52
.032
.041
.052
.069
.094
.13
.19
.29
.45
.74
,1.3
12
7.0
18
4.0
6.0
16
25
26
.50
SF
MF
14
ML
36
CL
680
Supersedes
12-4
//-
.>.
\NaaA\
MIL-HDBK-217F
NOTICE 2
12.3
ROTATING
DEVICES,
ELAPSED
TIME
METERS
DESCRIPTION
Elapsed Time Meters
kp =&p~Fai
Hours
Environment Factor - xc
lures/106
Lb
A.C.
20
Invefier Driven
30
Commutator D.C.
80
Environment
GB
1.0
GF
2.0
%
Ns
Nu
XT
Supersedes
18
IF
8.0
.5
UF
.6
.6
RW
.8
.8
1.0
1.0
7.0
5.0
.5
12
*IC
Uc
o to
~E
16
25
26
.50
SF
MF
14
ML
38
CL
N/A
12-5
MIL-HDBK-217F
NOTICE 2
RELAYS,
13.1
SPECIFICATION
M\L-R-5757
MIL-R-6106
MIL-R-13718
MIL-R-19646
MIL-R-19523
MIL-R-390~6
MIL-R-83516
MIL-R-83520
ML-R-83536
MIL-R-83725
MIL-R-83726 (Except Class C, Solti State Type)
)bP=
T. (%)
n
&Lncxc&xQn
.0067
.0075
.0064
.0094
.010
.012
.013
.014
.016
.017
75
.019
.021
80
65
90
95
100
105
110
115
120
125
-.0059 exp
2 %
-.0059 exp
~A
8.617
X 10-5
~bant
.U3
.10
.20
.30
.40
.50
.60
.70
.80
.90
1.02
1.06
1.15
1.28
1.48
1.76
2.15
2.72
3.55
4.77
~
1.
~-zm1)
1
10-5 [ T + 273
298
y--
,I
10
0.1
CYC
Rate
100
>1OOO
cn
10-1000
<10
2.00
I .au
1.75
3PDT
4PDT
6PDT
()
S2
~
%Yc
21.0
<1.0
~.exp
(MIL-SPEC)
1.00
s?S1
DPST
sPOT
3PST
4PST
DPDT
3.
c@e Rate
(@cbS
per Hour)
/
r
S2
-j
2,72
9.49
54.6
C ycle
1.28
1.76
2.72
4.77
9.49
21.4
Tempmture VC)
()
.1
-.17
8.617
R*06
.-
l=--
-.19
a.
Ob Hours
Failures/l
:6
.005=
.0066
.0073
.0081
.0089
.0098
.011
.012
.013
.014
.015
.017
.018
.019
iii
.022
.024
.026
.027
.029
.031
:&9
30
35
40
45
50
55
60
65
70
DESCRIPTION
Mechanical Relay
25
MECHANICAL
A
I
2.50
NOTE-
3,00
425
550
800
-H
n
I
CYC
13-1
Supersedes
nnll
page
-U.l1
13-1
of Revision
WI
F
ITHSISIUI
. rlxuu.
uulllwalLlwIl
10 IISZUIOUWUJ,
w-l! W1-.
-y -----------. ---
MIL-HDBK-217F
NOTICE 2
RELAYS,
13.1
MECHANICAL
Application and Constfuction Factor - fiF
1
Quality Factor - n,
Contact
7t Q
Quality
Rating
~
.10
.45
.60
1.0
1.5
1.5
@mmercial
2.9
Pum09e
b
Sensitive
(0-lCN)mw)
Polarized
Arm ature
Mercury
General
Construction
Type
(Long)
Dry Reed
lrrent
3Wmv
Idma)
.30
Application
Type
D~ Circuit
Wetted
Magnetic Latching
Balanc6d Armature
Solenoid
Armature (LoW)
Balanced Armature
Solenoid
Armature (Long and
short)
Mercury Wetted
Magnetic Latching
Meter Movement
Balancd Armature
Armature (ShOti)
GB
1.0
GF
2.0
.atch ing,
Magnetic
5-20 Amp
9.0
High Voltage
~
Power
11
%c
12
UF
46
RW
.50
SF
25-600
25
MF
13-2
Ilrne Dew,
~
*-Therm al
7.0
IF
c,
Ele ctronic
27
AC
25
8.0
Nu
ML
15
Ns
100
1
fiE
2
6
100
10
10
66
Contractors
(High
Current)
w Reed
Wetted
Balan@ armature
Vacuum (Glass)
Vacuum (Ceramk)
Armature (Longand
Mik w y
10
5
5
20
5
short)
Mercury Wetted
Magnetic Latching
Mechan~1 Latching
BalaArmature
Solenoid
Armature (Short)
Mechanlcd Latching
Baian@d Armature
Solenoid
:
3
2
2
7
12
10
5
N/A
Supersedes
page
13-2
of Revision
7F
fvllL-HDBK-21
NOTICE
13.2
RELAYS,
SOLiD
STATE
AND
TIME DELAY
DESCRIPTION
Relay, Solid State
Relay, Time Delay, Hybrid and Solid State
SPECIFICATION
MIL-R-28750
MIL-R-83726
The most accurate method for predicting the failure rate of solid state (and solid state time delay) relays is to sum
the failure rates for the individual components which make up the relay. The indvidual component failure rates
can either be calculated from the models provided in the main body of this Handbook (Parts Stress Method) or
from the Pafls Count Method shown in Appendix A, depending upon the depth of knowledge the analyst has
about the components being used. If insufficient information is available, the following default model can be
used:
~
= ~z@E
Failures/106 liours
Environment Factor - XE
Lb
1
Solid State
.029
.029
Hybrid
.029
Environment
GB
1.0
GF
3.0
GM
Ns
N
Alc
Quality Factor - z~
Quality
MIL-SPEC
Commemial
7C Q
1.0
1.9
12
6.0
17
12
IF
19
%c
21
UF
32
RW
23
.40
SF
MF
12
ML
33
cL
Supwsedw
fiE
590
13-3
MIL-HDBK-217F
NOTICE 2
SWITCHES
14.~
Liquid Level
Microwave
(waveguide)
pressure
pushbutton
Iced
locker
iotafy
Sensitive
Thermal
Thurnbwhed
Toggle
3.4
.00012
4.3
2.3
1.7
N/A
83504
8805
N/A
II
8932
9395
1211
8805
I
22885
24317
55433
3950
22885
3786
13623
15291
15743
22604
22710
45885
82359
8805
13484
22614
12285
24286
22710
3950
5594
8805
8834
9419
13735
.
81551
83731
Stress
s
0.05
2,8
.10
.0010
.023
.11
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1,06
1.15
1.28
1.48
1.76
2.15
2.72
3.55
4.77
1.28
1.76
2,72
4.77
9.49
21.4
Lamp
1.06
1.28
2.72
9,49
54.6
s=
XL
exp (S/.8)2
fiL
exp (s94)2
fiL
exp (S/.2)2
for tirnp
Load
.49
.031
.18
.10
xc
1.0
1.3
1.3
1.4
1.6
1.6
1.8
2.0
2.3
74-1
Supersedes
page
14-1
through
14-4
of Revision
I
4
MIL-HDBK-217F
NOTICE 2
SWITCHES
14.1
Environment
Quality Factor - Kn
.
Quality
MIL-SPEC
Lower
~Q
I
Factor - n~
~E
Environment
GB
1.0
GF
3.0
18
GM
8.0
NS
29
Nu
10
*C
18
IF
13
Uc
22
UF
46
RW
.50
SF
14-2
Supersedes
MF
25
ML
67
CL
1200
14-4
of Revision
MIL-HDBK-217F
NOTICE 2
14.2
DESCRIPTION
Circuit Breakers,
Circuit Breakers,
Circuit Breakers,
Circuit Breakers,
Circuit Breakers,
SPECIFICATION
MIL-C-13516
MIL-C-55629
MIL-C-83383
MIL-C-39019
W-C-375
kp = &cXuZQnE
SWITCHES,
CIRCUIT
BREAKERS
Failures/l
06 Hours
oualitv Factor - ~n
Description
Quality
%3
7C Q
Magnetic
.34
MIL-SPEC
1.0
Thermal
.34
Lower
8.4
Thermal-Magnetic
.34
Environment Factor - xc
IE
Configuration Factor - m
Configuration
nvironment
GB
1.0
GF
2.0
SPST
1.0
GM
DPST
2.0
Ns
3PST
3.0
Nu
4PST
4.0
AC
7.0
IF
9.0
Use Factor - z
Use
1.0
2.5
Supersedes
15
8.0
27
%c
11
UF
12
RW
46
SF
.50
MF
25
ML
66
CL
NtA
14-3
MIL-HDBK-217F
NOTICE 2
CONNECTORS,
15.1
LP = kbnTnKnQnEFailures/lo6
GENERAL
ours
APPLICATION NOTE: The failure rate model is for a mated pair of conneCtom. It is sometimes desirable to
assign half of the overall mated pair connedor (i.e., single corm-or)
failure rate to the Ime replaceable unit and
An example of when this would be beneficial is for input to maintainability
half to the chassis (or backplane).
prediction to allow a failure rate weighted repair time to be estimated for both the LRU and chassis. This
accounti~ procedure could be signiftint if repair times for the two halves of the connector are substantially
different. For a single connector divide ~ by tWO.
Temperature Factor - XT
~ification
MIL-C26482
115
27599
i500
29600
1840
83723
)999
Description
;ircular/Cylititil
-$) (v
.0010
1511
21097
55302
.040
24055
24056
.15
24308
28731
28748
83515
.021
21617
24308
28748
28804
81659
83513
8352?
83733
85028
.046
Rectangular
3F Coaxial
S607
36X3
S650
3655
15370
25516
26637
39012
55235
83517
.91
20
.00041
30
1.1
40
1.3
50
1.5
60
1.8
70
2.0
80
2.3
90
2.7
100
3.0
110
3.4
120
3.7
130
4.1
140
4.6
150
5.0
160
5.5
170
6.0
180
6.5
190
7.0
200
7.5
210
8.1
220
8.6
230
9.2
9.8
240
I
250
XT
Telephone
55074
.0075
Power
22992
.0070
Trlaxial
49142
.0036
sexp
10.
-.14
18.617
X 10-5
To
1
+
273
. 1
298
)1
To = Connector Ambient + AT
AT = Connector Insert Temperature
(see Table)
Rise
. .
. .
..
____
. a ___
page
15-1
_______ . .
through
15-5
of Revision
F
.
......
MIL-HDBK-217F
NOTICE 2
Mating/Unmating
C)
, Determination
Contact Gauge
Amperes
L
~er Contact
2
3
4
5
6
7
8
9
10
15
20
25
30
35
40
AT
AT
AT
AT
AT
AT
AT
AT
AT
=
=
=
=
=
=
=
=
=
30
10
22
37
56
79
22
4
8
13
19
27
36
46
57
70
20
2
5
8
13
18
23
30
37
45
96
32 Gauge
30 Gauge
28 Gauge
24 Gauge
22 Gauge
20 Gauge
18 Gauge
16 Gauge
0.100 (i) 85
12
0
1
1
2
3
4
5
6
7
15
26
39
54
72
92
1.0
> .05to .5
1.5
>.5t05
2.0
>5t050
3.0
> 50
One cycle includes both connect and
disconnect.
Quality Factor - XQ
Quality
Contacts
MIL-SPEC
Contacts
Lower
Contacts
Contacts
Environment Factor - XE
Contacts
Environment
Contacts
~E
Contacts
GF
1.0
12 Gauge Contacts
GM
8.0
Ns
5.0
Contacts
Rise
Nu
4
RF Coaxial Connectors
(High Power Applications)
o to .05
1.0
Insert Temperature
RF Coaxial Connectors
~K
GB
AT =
=
Mating/Unmating Cycles*
(per 1000 hours)
16
1
2
4
5
8
10
13
16
19
41
70
106
3.256(i)
85
2.856(i)
85
2.286(i) 85
1.345(i)l 85
0.989(i)
85
0.640(i) 85
0.429(i)
85
0.274(i)
85
Factor - nK
AT = 5 C
Alc
IF
Uc
AT= 50C
13
3.0
5.0
8.0
UF
12
RW
19
.50
SF
15-2
Supersedes
MF
10
ML
27
c,
490
15-5 of Revision F
MIL-HDBK-217F
NOTICE 2
15.2
Lp = ++CP7CQ7CEFailures/l
Dual-In-Line Package
Spec.
httlL-S
Lb
83734
.00064
83734
.00064
Chip Camier
38533
.00064
NIA
.00064
Relay
12883
.037
Transistor
12883
.0051
12883
.011
.3
MIL-SPEC.
1.0
Environment Factor - ~E
fiE
Environment
GB
1.0
GF
3.0
55
60
65
70
75
80
85
90
95
100
105
110
115
120
125
130
13.5
140
1.5
1.7
H
2.1
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
3.4
3.5
3.6
4.1
4.5
5.0
5.5
5.9
6.4
;$
155
160
165
170
175
180
Ns
6.9
7.4
7.9
8.4
8.9
9.4
9.9
10
11
12
12
13
13
14
14
15
16
16
17
18
18
19
20
20
21
22
6.0
18
Nu
AC
8.0
11
*UC
12
IF
13
*UF
25
*RW
.50
SF
MF
14
ML
36
c,
650
15-3
7tp
14
Supersedes
1.0
1
2
3
4
5
6
7
8
9
10
11
12
13
16
17
18
19
20
25
30
35
40
45
50
~Q
Lower
A ct ive
Contacts
14
15
Quality Factor - ~
Quality
Number of
Number of
Active
Contacts
Single-In-Line Package
SOCKETS
06 Hours
CONNECTORS,
l.-
----
-.
MIL-HDBK-217F
NOTICE 2
INTERCONNECTION
16.1
Ap =kb
ASSEMBLIES
WITH
PLATED
13)
Nptc+N2(~c+
7t Q nEF a illJre @
THROUGH
HOLES
H o urs
APPLICATION NOTE: This model applies to board configurations with leaded devices mounted into the
plated through holes and assumes failures are predominately defect related. For beads using surface mount
technology, use Section ~6.2 For a mix of leaded devices mounted into plated through holes and surface
mount devices, use this model for the leaded devices and use Section 16.2 for the surface mount contribution.
A discrete wiring assembly with electroless deposit plated through holes is basidly a pattern of insulated wires
The primary cause of failure for both printed wiring and discrete
laid down on an adhesive coated substrate.
wiring assemblies is associated with plated through-hole (PTH) problems (e.g., barrel crackng).
Quality Factor - ~
Base Failure Rate - ~
Quality
.000017
Lower
Quantity
Factor I
.00011
Nu~r
N,
Complex~ Factor - ~
Number of Circuit Planes, P
S2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
1.3
1.6
1.8
2.0
2.2
2.4
2.6
2.8
2.9
3.1
3.3
3.4
3.6
3.7
3.9
4.0
Factor -xc
Environment
~E
GB
1.0
GF
2.0
GM
7.0
&s
5.0
Nu
xc
1.0
13
5.0
%c
IF
8.0
16
%c
28
UF
19
%w
.50
SF
MF
10
ML
27
cL
500
Envimnmti
N2
ltQ
kb
Technology
.65P 63
Ifj-1
Supersedes
--1-
page
16-1
of Revision
F
,
...
~.
Jr--
-----------
MIL-I+DBK-217F
NOTICE 2
16.2
APPLICATION NOTE: The SMT Model was ctevelopecf to assess the life integfiiy of leadless and leaded
devices. It provides a relative measure of circuit card wearout due to thermal cycling fatgue failure of the
weakest link- SMT device. An analysis shouti be periorrned on all circuit board SMT components. The
component with the largest failure rate value (weakest link) is assessed as the overall board failure rate
due to SMT. The model assumes the board is completely renewed upon failure of the weakest link and
the results do not consider solder or lead marwfacturi~ defects. This model is based on the techniques
developed in Reference 37.
ASMT
where:
CR
Nf
I ( % AT -ucc(dT+TRIsE))
ECF
)LSMT = ~
ECF
lx 10-6
Nf=
Ffi*iVGI
_
k.....- ~llmldat~~
-..._._,.
Lc
0-.1
.11 -.20
.21 -.30
.31 -.40
.41 -.50
.51 -.60
,61-.70
.71 -.80
.81 -.90
> .9
,
(1
3.5 &
where:
d=
.13
.15
.23
.31
.41
.51
.61
.68
.76
1.0
h=
w=
AT
w%=
TRISE =
LC
Design
iife cycle
of the
equipment in which the circuit
board is operating
Pd
8JC
P=
16-2
Ix 10 +)-qn,c)
ral~
u w------ ~r~~- FCF
--ECF
-MT
~Lc
eJcp
New Page
MIL-HDBK-217F
NOTIGE 2
16.2
.0042
Telecorn~~~t~ns
.25
.021
Commercial Alrcrati
INustrial
Miliiafy Ahcnti
LeadlesS
J or S Lead
Gull WIW
Corw@e
3
1
@artz Fiber
Glass Fiber
5
K
Cafbon-Fibr/EpOW
Kevlar Fiber
.5
(FigMer)
.03
.12
MilfiarY Gwti
Appl=tbm
Miliia~ Aircraft (Caf90)
11
.17
computer
20
.08
18
FR4 Laminate
1.0
l~omotive
as
Substrate Material
%C
1
150
5,000
15
Epoxy/Glass Laminate
Polyamtie/Glass
13
Laminate
Polyam~/Kevlar
Laminate
Po&amtie/Wa~
LamiMte
@oxy/Kevkr Laminate
7
7
Alumina (Ceramk)
7
6
Plastic
Ceramic
21
GF
26
GM
26
hJs
61
Nu
31
%c
AIF
%c
UF
%lw
Sc
MF
ML
CL
20
7
var
Porcelainked Copper Clad In
Difference
AT
7
Environment
GB
31
57
57
31
7
N/A
NIA
hJIA
Nf
(xsMT
cfi
16-3
New Page
MIL-HDBK-217F
NOTICE 2
16.2
d
~f
35 (. R
(asAT-ucc(A~+TRlsE)) I 0 -6)-226@Lc)
For d:
For h:
h s 5 roils
For as:
as = 15 (Table - EPOXYGlass)
ForAT:
For
~.
WC:
7 (Table - PlastiC)
For TRISE:
For XLC:
For CR:
CR = .03 cycle~our
(1
740
(.65)(5)
(W2V
Nf
35
Nf
18,893 theml
629,767 hOu~
18,893 cycles
.03 cyiedbur
=
WMT
1-c
W=
*
226 (1)
cycles to failure
28
aSMT
ECF
~SMT
ECF
~T
XSMT =
.23 faiiures
.0000004 failure~~ur
= 629,767 kNJrS =
.4 failures/106 hours
New Page
16-4
MIL-HDBK-217F
NOTICE 2
17.1
CONNECTIONS
L = LX=
Ub
06 Hours
Failures/l
Envimnmnt Factor-Xc
&
Type
Soldeffess Wrap
Spfing Contad
Terminal Block
Environment
GB
.0013
GF
.000070
GM
.. .
Ns
.000015
Weld
Reflow Solder
~ (F/106 hm)
.00026
crimp
Clip Termin~bn
.0000068
.00012
.000069
.17
~E
.-
1 .U
1A I
2.0
7.0
4.0
AC
IF
AN
UF
.062
RW
4.0
6.0
6.0
8.0
.50
SF
MF
ML
CL
16
9.0
24
420
17-1
Supersedes
MIL-I-IDBK-217F
APPENDIX
A:
PARTS
COUNT
RELIABILITY
PREDICTION
Parts Count Reliablllty Predlctlon - This prediction method is applicable during bid proposal
and early design phases when insufficient information is available to use the part stress analysis models
shown in the main body of this Handbook. The information needed to apply the method is (1) generic part
types (including complexity for microcircuits) and quantities, (2) part quality levels, and (3) equipment
environment. The equipment failure rate is obtained by looking up a generic failure rate in one of the
following tables, multiplying it by a quality factor, and then summing it with failure rates obtained for other
components in the equipment. The general mathematical expression for equipment failure rate with this
met hod is:
i=n
EQUIP
i=l
@g@i
Equation 1
7tQ
Ni
~EQulP
Equation 1 applies if the entire equipment is being used in one environment. If the equipment
comprises several units operating In different environments (such as avionics systems with units in
airborne inhab~ed (Al) and uninhabited (AU) environments), tmn Equat~n 1 shou~ ~ aPPlied to the
potiions of the equipment in each environment. These environment-equipment failure rates should be
added to determine total equipment failure rate. Environmental symbols are defined in Section 3.
The quaMy factors to be used with each part type are shown with the applicable ~ tables and are not
necessarily the same values that are used in the Part Stress Analysis. Mcrocircuitshave an additional
rnuttip~ing factor, ~L, which aOCOuntsfor the matudty of the manUfaCt@ng process. For devices in
productiontwo years or more, no modifmtbn Is needed. For those in production less than two years,
h
should be multipliedby the appropriate XL faotor (See page A-4).
It shouldbe noted that no generic failure rates are shown for hybrid microcimuits. Each hybrid is a fairly
unique device. Since none of these devices have been standardized, their complexity cannot be
determined from their name or function. Identically or similarfy named hybrids can have a wide range of
complexitythat thwarts categorization for pufposes of this prediction method. If hybrids are anticipated for
a design, their use and construction should be thoroughly investigated on an individual basis with
application of the prediction model in Section 5.
The failure rates shown in this Appendix were calculated by assigning model default values to the
failure rate models of Section 5 through 23. The specific defautt values used for the model parameters are
shown with the kg Tables for microcircuits. Defautt parameters for all other part classes are summarized in
the tables stafling on Page A-12. For parts with characteristics which differ significantly fmm the assumed
defaults, or parts used in large quantities, the underlying models in the main body of this Handbook can
be used.
A-1
MIL-HDBK-217F
NOTICE 2
APPENDIX
PARTS
A:
COUNT
i
..mtw
-wow.
.-mri
Nmm
r-.-04
II
OJ
r e -m o
.
0--=
In
ZS8
1%
in
In
Lr
IA?
Supersedes
A-2
page A-20f
Notice 1
MIL-HDBK-217F
NOTICE 2
APPENDIX
-mmo
FF)mo
-.-N
.,.
9-..04
.,.
.efwm
. . . .
Cwlo
.P.r)
. .
or-mm
to
-Nsrl
0000
0000
mmmm
.
QNN
*W*SJ
.-mm
. . .
000.
0000
A:
PARTS
COUNT
Qo
.
o--m
-Wol
r-mm%
000.
Omoe
.Pmm
.
.
Inulo)c
*WOO
Oooc
mmea
m@@o
Oooc
CVWF)N
Cwmlou)
mcwea
-NNC
0000
000<
of-Qe
F-WU
Oooc
Lo
Lc
Supersedes
A-3
MIL-HDBK-217F
APPENDIX
A:
PARTS
COUNT
c?
e -i
w
Ii
9
-GJR9416
OQ!QCNO
w-
u)
W
64
N
>
A-4
MIL-HDBK-217F
NOTICE 2
APPENDIX
A:
PARTS
COUNT
:
I
A-5
Supersedes
MIL-HDBK-217F
NOTICE
APPENDIX
PARTS
A:
COUNT
I
>
9
?4
m
z!
0
o
o
m
,
,
.
r
rU)
0
0
c
c
in
r)
w
m.
0<
m
$
8
Iii
o
i
i
u
cc<
c
*
3=
r+
m
0
e
0,
rOA
0.
l-Fl-
2!
II
Ill
2!
?!
persedes
eviSIO!l
MIL-HDBK-217F
NOTICE 2
APPENDIX
I
A:
PARTS COUNT
1
<
,
Ln
c
r
8
(
-.
-mm
Supersedes
A-7
MIL-HDBK-217F
NOTICE 2
APPENDIX
A:
PARTS
COUNT
U7
o
m
1-
Q
e+
g)
s
o
Q
!!M
. .
?-
mf
9,
.*-S
. .
-w
Ji
w
L
A-8
Supersedes
page A-80f
Nottce 1
MIL-HDBK-217F
NOTICE 2
APPENDIX
A:
PARTS
COUNT
. . . . .
f--
ul-r Q ti
q.-
o~elyo
-CM-N.
.
i.
1
i?
(i
G
-----------
Supersedes
.(-UCU
-----
page A-90f
Revision
----
--
mmmmr)mm
----
---
-----
- -
U-imbf)inmbnlr)m
-------
A-9
MIL-HDBK-217F
NOTICE 2
APPENDIX
A:
r
PARTS
.
0
*
m=
A-IO
.m
11
Supersedes
MIL-HDBK-217F
NOTICE 2
APPENDIX
Supersedes
..
..
-.
page
A-1 1 of Notice 1
A:
PARTS
COUNT
A-II
MIL-HDBK-217F
NOTICE 2
APPENDIX
0
.
~
PARTS
A:
COUNT
I
I
II
.--a
----
0.
0.
0.0.
--
0.
0.
r-
00
. .
0000
. . . .
b.
0.
T-
VIA
-- -u
tt{
LLI.L
330
u
0
m
A-12
Supersedes
page A-120f
Notice I
MIL-HDBK-217F
NOTICE 1
APPENDIX
Supersedes
A:
PARTS
COUNT
A-13
MIL-HDBK-217F
NOTICE 2
APPENDIX
C:
26.
27.
28.
Reliability
Prediction
Models
for Discrete
RADC-TR-88-72,
Semiconductor
Devices,
BIBL1OGRAPHY
AD A193759.
RADC-TR-88-97,
AD
A200529.
This study developed new failure rate prediction models for GaAs Power FETS, Transient
Suppressor Diodes, infrared LEDs, Diode Array Displays and Current Regulator Diodes.
29.
Impact
of Fiber
Optics
on System
Reliability
and Maintainability,
AD
RADC-TR-88-124,
A201946.
30.
Vl+SIC/Vl-tSIC
Modeling, RADC-TR-89-1
71, AD AZ 4601.
This study provides the basis for the VHSIC model appearing in MIL-HDBK-217F,
5.
31.
Reliability
Assessment
Section
AD MI 6907.
considered when performing an FEA and the procedure used to transfer the results to a
reliability figure-of-merit.
32.
Reliability Analysis/Assessment
of Advanced Technologies,
RADC-TR-90-72,
ADA 223647.
This study provides the basis for the revised microcircuit models (except VHSIC and Bubble
IUemories) appearing in MIL-HDBK-217F, Section 5.
33.
Improved Reliability Prediction Model for Field-Access Magnetic Bubble Devices, AFWAL-TR81-1052.
34.
35.
MIL-HDBK-251.
construction
techniques,
details,
operating
standard
parts,
characteristics,
environmental
37.
Supersedes
c-3
MI L-HDBK-217F
NOTICE 2
APPENDIX
C:
BIBLIOGRAPHY
and critical failure modes. It is available from the Carderock Division, Naval Surface Warfare
Center, Bethesda, MD 20084-5000, Phone @Ol ) 227-1694.
Custodians:
Army - CR
Navy - EC
Air Force -17
Preparing Activity:
Air Force -17
Pro)ect No. RELI-0074
Review Activities:
Army - Ml, AV, ER
Navy - St-i, AS, OS
Air Force -11, 13, 15, 19, 99
User Activities:
Army - AT, ME, GL
c-4
Supersedes
STANDARDIZATION
DOCUMENT
NAME OF SU8MlTflNG
Reliability
hJotlce 2
4.
ORGANRATION
Pred~ctlon of Electronic
TYPE OF ORGANKATtON
n
ADDRESS
6.
I
b
Recommended
@Padfy)
c.
Raaaon/l?a@wle
forRacommetition:
Wording
REMARKS
7a.
NAME OF SUBM1lTER
c.
MAILINQ ADDRESS
nuawbw9
- -.
b.
(fJiSf,
FIrsf,
Ml) - @hOfld
DD 82M
MAR 1426
l-*4a
OTHER
PROBLEM AREAS
a
Pamgraph Number and Wording
USER
MANUFACTURER
c1
1.
Equipment
(Marx one)
VENDOR
b.
PROPOSAL
DOCUMENT TfTLE
NUMBER
MIL-HDBK-217F,
.
DOCUMENT
IMPROVEMENT
(See /nstrucfion -Reveme Side)
.-
----
8.
DATE Of SU6MtSS10f4
----
---
(YYMkVDO)
------
-.
I
do cum ent(s)
or ?0 a m end
(XWW6CIMI
of documents,
on
thh
fofm
nor to request
do not c on611tute
re quire m ents
OFFICIAL BUSINESS
PENAllY
111111
n
MAIL ,~,
NO POSTAGE
*BUSINESS
NECESSARY
IF MAILED
iN THE
UNITED STATES
REPLY
Rome Laboratory/ERSR
AlTN: Seymour F. Morris
525 Brooks Rd.
Griffiss AFB, NY 13441-4505
.