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Department of Physics, Texas State University, 601 University Drive, San Marcos, Texas 78666, USA
Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, USA
(Received 14 September 2012; accepted 17 December 2012; published online 10 January 2013)
Single crystal BaTiO3 (BTO) has been grown epitaxially on GaAs using molecular beam epitaxy
with a 2 unit cell SrTiO3 nucleation layer. The oxide film is lattice-matched to GaAs through an
in-plane rotation of 45 relative to the (100) surface leading to c-axis orientation of the BaTiO3.
X-ray diffraction confirmed the crystallinity and orientation of the oxide film with a full width half
maximum of 0.58 for a 7.5 nm thick layer. Piezoresponse force microscopy was used to
characterize the ferroelectric domains in the BaTiO3 layer, and a coercive voltage of 12 V and
C 2013 American Institute of Physics.
piezoresponse amplitude 5 pm/V was measured. V
[http://dx.doi.org/10.1063/1.4773988]
Ferroelectric layers grown directly on semiconductors
have been sought after for decades as a means of developing
non-volatile single transistor memory elements using the ferroelectric layer as the gate dielectric in a metal oxide semiconductor field effect transistor (MOSFET) device.1 More
recently, it has been proposed that the incorporation of a ferroelectric layer as part of a gate dielectric can be exploited to
reduce the subthreshold swing for ultra-low power MOSFET
devices, and an increase in the on-current of the transistor can
be achieved with the drawback of some hysteresis in the Id-Vd
characteristics.2,3 These performance enhancements are attributed to the negative capacitance effect of the ferroelectric
layer. Of course, the desire is to be able to integrate a single
crystal ferroelectric layer on a semiconductor to achieve spontaneous polarization of the ferroelectric layer that is aligned
along a single direction, preferably normal to the surface, as
opposed to a polycrystalline or amorphous layer.
Among the ferroelectric materials, BaTiO3 (BTO) is well
suited for integration with semiconductors. It is among the
most widely studied material systems for its many properties
that include piezoelectricity, ferroelectricity, pyroelectricity,
and electro-optics. BaTiO3 continues to be of interest for a
number of device applications46 and as one layer of twophase multiferroic systems.7,8 One of the challenges in integration of an oxide with semiconductors is the initial epitaxial
nucleation without oxidation of the surface. The pioneering
work by McKee et al.9 and later by Li et al.10 has allowed
for the growth of commensurate SrTiO3 (STO) on Si (100)
substrates using molecular beam epitaxy (MBE). These
approaches have demonstrated that with careful control of the
growth kinetics, it is possible to integrate oxides directly on Si
thereby opening up the possibility added functionality onto
complementary metal oxide semiconductor (CMOS) devices.
In 2003, Liang et al.11 have also demonstrated the growth of
high quality STO on GaAs (100) with a crystalline transition
across the GaAs/STO interface and a full width at half maximum (FWHM) of the STO (200) peak of 0.42 . Epitaxial
growth of BaTiO3 has also been attempted on Si(100) using
buffer layers1214 and on Ge-on-Si(001) substrates directly.15
a)
0003-6951/2013/102(1)/012907/4/$30.00
102, 012907-1
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012907-2
Contreras-Guerrero et al.
FIG. 1. RHEED images of the GaAs c(4 4) reconstruction along the [010]
azimuth (a) before and (b) after the deposition of 1=2 monolayer of Ti. The
RHEED patterns after 2 unit cells of STO and after 90 A BTO layer grown
on GaAs are shown in (c) and (d), respectively.
thick BaTiO3 on
FIG. 2. X-ray diffraction theta-2 theta spectra for a 75 A
GaAs.
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Contreras-Guerrero et al.
BaTiO3
FIG. 4. XPS spectrum of As 3d (left) and Ga 3d (right) for a 20 A
layer grown on GaAs probing the oxide/GaAs interface.
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012907-4
Contreras-Guerrero et al.
FIG. 5. (a) height, (b) PFM amplitude, and (c) PFM phase images acquired simultaneously after patterning a 3 lm 3 lm square ring by applying 63 V DC
bias (Scale bars: 1 lm and Vac 500 mV). The inner ring in (b) and (c) corresponds to where 3 V sample bias was applied, while the outer ring and center
square correspond to where 3 V was applied. (d) Amplitude and (e) phase curves acquired during PFM spectroscopy (Vac 4.0 V).
10
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