Hetero-structure FETs: Modeling, Characterization and Analysis

Introduction
Mehdi Anwar
University of Connecticut

Material Properties: Heterojunction

Material/Device Fundamentals

Band Structure
Basis FETs
Introduction to HEMTs

Charge Control
Transport
Parameter Extraction & Circuit Representation
Performance Analysis

Noise
Power
Advanced HFETs/HEMTs
Advanced Concepts
Conclusion

Reading Assignments: Band Structure

C. G. Van de Walle, Band lineups and
deformation potentials in model-solid theory, PRB
39, p. 1871, 15 January 1989-II
S. L. Chuang and C. S. Chang, k.p method for
strained wurzite semiconductors, PRB 54, p.
2491, 15 July 1996-II
Semiconductors Basic Data; Otfried Madelung
(Ed.); 2nd Revised Edition, Springer

Reading Assignments: Basic FETs

C. T. Sah and H. C. Pao, The effects of fixed bulk
charge on the characteristics of metal oxide
semiconductor transistors, IEEE TED-13, p. 393,
1966
J. R. Brews, A charge sheet model of the
MOSFET, Solid-State Electron., Vol. 21, p. 345,
1978
Any standard text on Semiconductor Devices

Reading Assignments: HEMTs

P. M. Solomon and H. Morkoc, Modulation doped GaAs/AlGaAs heterojunction field-effect transistors

(MODFETs), ultrahigh speed device for supercomputers, IEEE TED-31, p. 1015, 1984
D. Delagebeaudeuf and N. T. Linh, Metal-(n) AlGaAs-GaAs two dimensional electron Gas FET, IEEE
TED-29, p. 955, 1982
T. J. Drummond, H. Morkoc, K. Lee and M. Shur, Model for modulation doped field effect transistor, IEEE
EDL-3, p. 338, 1982
A. F. M. Anwar and A. N. Khondker, "An envelope function description of double-heterojunction quantum
wells," Jour. Appl. Phys., vol. 62, No. 10, pp. 4200-4203, 15th November 1987.
A. N. Khondker and A. F. M. Anwar, "Analytical model for AlGaAs/GaAs heterojunction quantum wells,"
Solid-State Electronics, vol. 30, pp. 847-852, August 1987.
C. Z. Cil and S. Tansal, A new model for modulation doped FETs, IEEE EDL-6, p. 434, 1985
C-S Chang and H. R. Fetterman, An analytical model for HEMTs using new velocity-field dependence,
IEEE TED-34, p. 1456, 1987
A. N. Khondker and A. F. M. Anwar," Approximate current-voltage models for MODFETs", IEEE Trans.
Elect. Dev., vol. 37, No. 1, pp. 314-317, Jan. 1990.
A. F. M. Anwar, Shangli Wu and Richard T. Webster, Temperature dependent transport parameters in
short GaN structures, phys. stat. sol. (b) 228, No. 2, p. 575, November 2001.
A. F. M. Anwar, Shangli Wu and Richard T. Webster, Temperature dependent transport parameters in
short GaN structures, phys. stat. sol. (b) 228, No. 2, p. 575, November 2001.

Reading Assignments: Parameter Extraction

Benjamin D. Huebschman, Pankaj B. Shah and
Romeo Del Rosario, Theory and operation of Cold
Field Effect Transistor External Parasitic
Parameter Extraction, ARL Report, May 2009.
J. Michael Golio, Monte G. Miller, George G.
Maracas and David A. Johnson, Frequency
dependent electrical characteristics of GaAs
MESFETs, IEEE ED-37, No. 5, p. 1217, 1990.

Reading Assignments: Power and Noise

Syed S. Islam and A.F.M. Anwar, SPICE model of AlGaN/GaN HEMTs and simulation of VCO and power amplifier,
International Journal of High Speed Electronics and Systems, Vol. 14, No. 3, pp. 853-859, 2004
Elias W. Faraclas, Syed S. Islam and A. F. M. Anwar, Growth Parameter Dependence of Gain Compression in AlGaN/GaN
HFETs, Solid-State Electronics, vol. 48, p. 1849, 2004.
Syed S. Islam, A. F. M. Anwar and Richard T. Webster, A Physics Based Frequency Dispersion Model of GaN MESFETs,
IEEE TED, vol. 51, p. 846, June 2004.
Syed S. Islam and A. F. M. Anwar, Self-heating and trapping effects on the RF performance of GaN MESFETs, IEEE MTT,
vol. 52, No. 4, pp. 1229-1236, 2004.
Arif Ahmed, Syed S. Islam and A. F. M. Anwar, Frequency and temperature dependence of gain compression in GaN/AlGaN
HEMT amplifiers, Solid-State Electronics, vol. 47, No. 2, p. 339, February 2003.
Syed S. Islam and A. F. M. Anwar, Nonlinear analysis of GaN MESFETs with Volterra series using large-signal models
including trapping effects, IEEE Trans. Microwave Theory and Tech., vol. 50, no. 11, p. 2474, November 2002.
Syed S. Islam and A. F. M. Anwar, High Frequency GaN/AlGaN HEMT Class-E Power Amplifier, Solid-State Electronics,
vol. 46, p. 1621, October 2002
A. F. M. Anwar and Syed S. Islam, Frequency Dependence of GaN/AlGaN HEMT Amplifier Using Time Domain Analysis,
Solid-State Electronics, vol. 46, p. 1507, October 2002.
Syed S. Islam and A, F. M. Anwar, Temperature dependent nonlinearities in GaN/AlGaN HEMTs, IEEE Trans. Electron.
Dev., vol. 49, no. 5, p. 710, May 2002.
Arif Ahmed, Syed S. Islam and A. F. M. Anwar, A temperature-dependent nonlinear analysis of GaN/AlGaN HEMTs using
Volterra series, IEEE Trans. Microwave Theory and Tech., vol. 49, no. 9, p. 1518, September 2001.
A. F. M. Anwar, Shangli Wu and Richard T. Webster, Temperature dependent transport properties in GaN, AlxGa1-xN, and
InxGa1-xN semiconductors, IEEE Trans. Electron Dev., March 2001.

Reading Assignments: Power and Noise

Richard T. Webster and A. F. M. Anwar, Noise in Metamorphic AlGaAsSb/InGaAs/AlGAAsSb HEMTs, Solid-State

Electronics, vol. 48, p. 2007, 2004.
Kuo-Wei Liu and A. F. M. Anwar, A self-consistent model for small-signal parameters and noise performance of
InAlAs/InGaAs/InAlAs/InP HEMTs, Solid-State Electronics, vol. 47, pp. 763-768, 2003.
M. M. Jahan, K.-W. Liu and A. F. M. Anwar, "Bias Dependence of high frequency noise in heterojunction bipolar transistors,"
IEEE Trans. Microwave Theory and Tech., vol. 51, p. 677, March 2003.
Richard T. Webster, Shangli Wu and A. F. M. Anwar, Impact ionization in InAlAs/InGaAs/InAlAs HEMTs, IEEE Electron
Dev. Lett., vol. 21, no. 5, p. 193, May 2000.
216, 1999.
A. F. M. Anwar, K. W. Liu and V. P. Kesan," Noise performance of SiGe/Si MODFETs", IEEE Trans. Elect. Dev., ED-42, p.
1841-1846, Oct. 1995.
M. M. Jahan and A. F. M. Anwar, "Shot noise in double barrier quantum structures," Solid-State Electronics, vol. 38, pp. 429432, February 1995.
K.-W. Liu and A. F. M. Anwar," Noise modeling for high electron mobility transistors," IEEE Trans. Electron Dev., vol. 41, no.
11, pp. 2087-2092, 1994.
A. F. M. Anwar and K.-W. Liu, "Noise temperature modeling of AlGaAs/GaAs and AlGaAs/InGaAs/GaAs HEMTs," Solid-State
Electronics, vol. 37, no. 9, p. 1585-1588, 1994.
K.-W. Liu and A. F. M. Anwar, "An analytical model of current-voltage and dc, small-signal parameters for Si/Si1-xGex FETs,"
Solid-State Electronics, vol. 37, no. 8, pp. 1570-1572, 1994.
A. F. M. Anwar, K. W. Liu and M. M. Jahan, Noise in Si/Si1-xGex n-challen HEMTs and p-channel FETs, Simulation of
Semiconductor Devices and Processes Vol. 5, Ed. S. Selberherr, H. Stippel, E. Strasser, pp. 273-276, September 1993.

Reading Assignments: Advanced HFETs

A. F. M. Anwar, Richard T. Webster and Kurt V. Smith, Bias induced strain in

AlGaN/GaN heterojunction field effect transistors and its implication, Applied
Physics Letters, vol. 88, pp. 203510-1 203510-3, May 15, 2006.
Elias W. Faraclas and A. F. M. Anwar, AlGaN/GaN HEMTs: Experiment and
simulation of DC characteristics, Solid-State Electronics, vol. 50, pp. 10511056, May/June 2006.
Richard T. Webster and A. F. M. Anwar, Noise in Metamorphic
AlGaAsSb/InGaAs/AlGAAsSb HEMTs, Solid-State Electronics, vol. 48, p.
2007, 2004.
A.F.M. Anwar and Richard T. Webster, On the possible effects of AlGaAsSb
growth parameters on the 2DEG concentration in AlGaAsSb/InGaAs/AlGaAsSb
QWs, IEEE Trans. Electron Dev., vol. 45, No. 6, pp. 1170-1175, 1998
A. F. M. Anwar and Richard Webster, An envelope function description of the
quantum well form in AlGaAsSb/InAs/AlGaAsSb heterostructures, J. Appl.
Phys., vol. 80, pp. 6827-6830, December 1996.

Reading Assignments: Advanced Concepts

http://www.darpa.mil/mto/solicitations/baa1109/index.html
http://www.nsf.gov/pubs/2010/nsf10614/nsf10614.
htm
Ken David, Silicon Nanotechnology, February
2004
Victor V. Zhirnov and Ralph K. Cavin, Negative
capacitance to the rescue?, Nature
Nanotechnolgy, vol. 3, p. 77, February 2008