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Frequency Response
Ching-Yuan Yang
National Chung-Hsing University
Department of Electrical Engineering
Outline
z s-Domain Analysis: Poles, Zeros, and Bode Plots
z The Amplifier Transfer Function
z Low-Frequency Response of the Common-Emitter Amplifiers
z High-Frequency Response of the Common-Emitter Amplifiers
z The Common-Base, Common-Gate, and Cascode Configurations
z Frequency Response of the Emitter and Source Followers
z The Common-Collector Common-Emitter Cascade
z Frequency Response of the Differential Amplifier
Microelectrics (III)
7-2
Microelectrics (III)
7-3
Transfer Function
vi
vo
T (s)
Input : vi (t ) = Vi sint
Output : vo (t ) = Vo sin(t + )
Linear System
Transfer function T (s ) =
v o (s ) am s m + am 1s m 1 + L + a 0
=
v i (s )
s n + bn 1s n 1 + L + b0
(m < n )
where the coefficients a and b are real numbers; n is called the order of the network.
z For a stable circuit the denominator coefficients should be such that the roots of
the denominator polynomial all have negative real parts.
z Time Domain T (t ) =
v 0 (t )
v i (t )
Frequency Domain T ( ) =
V0 ( )
Vi ( )
Vo (s )
Vi (s )
z Evaluating the frequency response of amplifiers:
R R
L sL jL
C 1/sC 1/jC
s j
Microelectrics (III)
7-4
(s Z1 )(s Z 2 )L(s Z m )
(s P1 )(s P2 )L(s Pn )
T ( j ) = T ( j ) ( )
Magnitude
phase
20log |T(j)| dB
Microelectrics (III)
7-5
First-Order Functions
z Low-pass transfer function
V0 (s ) =
1/(sC )
1
1
Vi (s ) =
Vi (s ) =
Vi (s )
R + 1/(sC )
1 + sRC
1 + s
T (s ) =
V0 (s )
1
=
Vi (s ) 1 + s
where
= RC
V0 (s ) =
R
s
sRC
Vi (s ) =
Vi (s ) =
Vi (s )
R + 1/(sC )
1 + sRC
1 + s
T (s ) =
V0 (s )
s
=
Vi (s ) 1 + s
where
= RC
7-6
Bode Plots
Transfer function
T (s ) = am
(s Z1 )(s Z 2 )L(s Z m )
(s P1 )(s P2 )L(s Pn )
T ( j ) = T ( j ) ( )
We can find
T ( j ) = am
( j Z1 )( j Z 2 )L( j Z m )
= am
( j P1 )( j P2 )L( j Pn )
Z12 + 2 Z 22 + 2 L Z m2 + 2
P12 + 2 P22 + 2 L Pn2 + 2
( ) = tan1
Microelectrics (III)
7-7
(a ) << a ,
(b ) = a =
0dB
= 3dB
2
20 log 1 + = 3dB
a
(c ) >> a
2
20 log 1 + = 10 log = 20 log
a
a
a
The curve shown applies for the case of a zero. The low-frequency asymptote is a horizontal
straight-line at 0-dB level and the high-frequency asymptote is draw with 6dB/octave slope.
Microelectrics (III)
7-8
The curve shown applies for the case of a pole. The low-frequency asymptote is a horizontal
straight-line at 0-dB level and the high-frequency asymptote is draw with 6dB/octave slope.
7-9
(a ) << a ,
(b ) = a =
= 3dB
tan-1 = 45o
a
(c ) >> a
tan-1 900
a
For the plot of the phase term tan1(/a), the asymptotic plot consists of three
straight lines: (a < 0 )
z The first is horizontal at = 0 and extends up to = 0.1|a|.
z The second line has a slope of 45o/decade and extends from = 0.1|a| to
= 10|a|.
z The third line has a zero slop and a level of = 90o.
Microelectrics (III)
7-10
For the plot of the phase term tan1(/a), the asymptotic plot consists of three
straight lines: (a < 0 )
z The first is horizontal at = 0 and extends up to = 0.1|a|.
z The second line has a slope of 45o/decade and extends from = 0.1|a| to
= 10|a|.
z The third line has a zero slop and a level of = 90o.
Microelectrics (III)
7-11
7-12
20 log 1 + 2 20 log 1 + 5
10
10
tan1 5
2
10
10
( ) = 90o tan1
Comparison:
Microelectrics (III)
Microelectrics (III)
7-13
Frequency bands
(a) Frequency response for a dc amplifier:
7-14
The amplifier gain function in the general form: A(s) = AM FL(s) FH(s)
where FL(s) and FH(s) are functions that account for dependence of gain on frequency in
the low-frequency band and in the high-frequency band, respectively.
A(s) AM
Microelectrics (III)
7-15
Microelectrics (III)
7-16
FL(s) 1
where P1, P2, , PnL ( > 0) are the frequencies of the nL low-frequency poles, and
Z1, Z2, , ZnL (are positive, negative, or zero) are nL zeros.
Determine the lower 3-dB frequency L :
n Assume one of the poles (P1) has much higher frequency than all other poles.
For frequencies close to the midband, FL (s )
s
s + P1
7-17
(s + P 1 )(s + P 2 )
( + P21 )( 2 + P22 )
Since L is usually greater than the frequencies of all the poles and zeros,
1/L4 0 and L P21 + P22 2 Z21 2 Z2 2
Microelectrics (III)
7-18
(7.18)
Example
The low-frequency response of an
amplifier
s(s + 10)
FL (s ) =
(s + 100 )(s + 25)
n We find that a dominant-pole
situation almost exists and L
100 rad/s.
o A better estimate of L by Eq.
(7.18):
Microelectrics (III)
7-19
s 0
FH(s) 1
where P1, P2, , PnH ( > 0) are the frequencies of the nH high-frequency
poles, and Z1, Z2, , ZnH (are positive, negative, or zero) are nH zeros.
Determine the upper 3-dB frequency H :
n If one of the high-frequency poles -- P1 -- is of much lower frequency than
any of the other poles, then the high-frequency response of the amplifier will
be dominated by this pole. H P1
FH (s )
1
1 + s / P 1
P1
Microelectrics (III)
P 1
Z1
7-20
Z1
10
Example
The low-frequency response of an
amplifier
FH (s ) =
1 s /105
(1 + s /104 )(1 + s / 4 104 )
7-21
1 + a1s + a 2s + L + anH s
1 + b1s + b2s 2 + L + bnH s nH
where the coefficients a and b are related to the zero and pole frequencies, respectively.
1
1
1
b1 =
+
+L+
P1
FH (s ) =
P 2
PnH
nH
Ci Rio
i =1
Ci Rio
i
The above method is used to determine H (in complex circuits) normally yields remarkably
good results even if a dominant pole does not exist.
Microelectrics (III)
7-22
11
Example: High-frequency equivalent circuit of a common-source FET amplifier -The amp. is fed with a signal generator having a resistance R. Resistance Rin is due to the
biasing N.W. Resistance RL is the parallel equivalent of the load resistance RL, the drain
bias resistance RD, and the FET output resistance r0. Caps Cgs and Cgd are the FET
internal cap. For R = 100k, Rin = 420k, Cgs = Cgd = 1PF, gm = 4 mA/V, and RL =
3.33k, find the midband voltage gain, AM = V0/Vi, and the upper 3-dB frequency, fH.
High-frequency equivalent:
Microelectrics (III)
7-23
AM
Vo
Rin
(gm RL ')
=
Vi
Rin + R
420
4 3.33
420 + 100
= 10.8 V/V
=
n Determine Rgs seen by Cgs by setting Cgd = 0 and short-circuiting the signal generator Vi :
Microelectrics (III)
7-24
12
V gs
Vgs
Node G:
Ix =
Node D:
I x = gmVgs +
R gd
Rin
R
Vgs + V x
R 'L
Vx
gs + gd
Thus,
Microelectrics (III)
fH =
1
= 860 krad/s
(80.8 + 1160) 10 9
H
= 128.3 kHz
2
7-25
z Discuss
The method of open-circuit time constants tells the designer which of
the various capacitance is significant in determining the amplifier
frequency response.
Microelectrics (III)
7-26
13
s L + d1s L + L
s n L + e1s n L 1 + L
where the coefficients d and e are related to the zero and pole frequencies, respectively.
e1 = P1 + P1 + + PnL
FL (s ) =
7-27
Microelectrics (III)
7-28
14
Microelectrics (III)
7-29
Microelectrics (III)
7-30
15
Microelectrics (III)
7-31
Vg (s ) = Vi (s )
Vg (s )
Vi (s )
Rin
Rin + R + 1/sCC1
Rin
s
Rin + R s + 1/sCC1(Rin + R )
7-32
16
I d (s ) = I s (s ) =
Vg (s )
1/ gm + Z S
Thus I d (s ) = gmVg (s )
= gmVg (s )
YS
gm + YS
where YS =
1
1
=
+ sCS
Z S RS
s + 1/(CS RS )
1/ RS + sCS
= gmVg (s )
gm + 1/RS + sCS
s + (gm + 1/ RS )/CS
which indicates that the bypass capacitor CS introduces a real zero and a real
g + 1/RS
1
1
and P 2 = m
=
L(7.38) ( Z < P 2 )
pole. Z =
CS RS
CS
CS (RS 1/ gm )
Microelectrics (III)
7-33
The effect of CS :
CS introduces a zero Z that makes ZS infinite, which makes physical sense
because an infinite ZS will cause Id, and hence Vo, to be zero.
The pole frequency is the inverse of the time constant formed by multiplying CS by
the resistance seen by the capacitor.
z
(Thevenin theorem)
Vo (s ) = I d (s )(RD ro R L )
s
s + 1/CC 2[R L + (RD ro )]
Thus CC2 introduces a zero at zero frequency (dc) and a real pole with a frequency
1
P 3 =
CC 2[R L + (R D ro )]
Again the pole frequency is the inverse of the time constant formed by multiplying CC2
by the resistance seen by the capacitor.
Microelectrics (III)
7-34
17
and
P 1 =
1
CC1(Rin + R )
P 3 =
1
CC 2[R L + (R D ro )]
Microelectrics (III)
Z =
1
CS RS
P 2 =
7-35
1
CS (RS 1/ gm )
Decide the location of the two other poles, say five to ten times lower than
Microelectrics (III)
7-36
18
Example: Select appropriate values for the coupling capacitors CC1 and CC2
and the bypass capacitor CS of the amplifier
The low - frequency response is dominated by a pole at 100HZ and that the nearest pole or
zeros will be at least a decade away. Let VDD = 20V, R = 100k, RG1= 1.4M, RG2 =
0.6M, RS = 3.5k, RD = 5k, r0 = , RL = 10k, VP = 2V, and Idss = 8mA. Also,
determine the midband gain.
Solution
n Dc operating point:
ID = 2mA VGS = 1V VGS = 10V
2I DSS I D
= 4mA/V
gm =
VP I DSS
o Find the midband voltage gain
Rin =
RG1RG 2
= 420k
RG1 + RG 2
AM =
Rin
gm (RD R L )
Rin + R
420
5 10
4
= 10.8V/V
520
5 + 10
20.7 dB
Microelectrics (III)
7-37
fZ =
1
1
=
= 6.7Hz
2CS RCS 2 6.83 10 6 3.5 103
Microelectrics (III)
7-38
19
Microelectrics (III)
7-39
n Vs = 0, CE and CC2 :
r + rx + (RB Rs )
0 + 1
p Vs = 0, CC1 and CE :
RC2 = RL + (RC || ro )
1
1
1
+
+
the lower 3 - dB frequency L
CC1RC1 C E R 'E CC 2RC 2
1/ RE + sC E
Microelectrics (III)
7-40
sZ =
1
C E RE
Ching-Yuan Yang / EE, NCHU
20
Microelectrics (III)
7-41
Vs and Rs represent the Thvenin equivalent of the circuit at the input side, including
the output circuit of the preceding amplifier stage (if any) and the bias network of the
transistor Q (if any).
RL represents the total resistance between the drain (the collector) and signal ground.
Microelectrics (III)
7-42
21
R 'L = R L ro
Microelectrics (III)
7-43
V 's = Vs
Microelectrics (III)
r
, R 's = (Rs + rx ) r , and R 'L = R L ro
Rs + rx + r
7-44
22
Millers Theorem
I1 = Y(V1 V2 )
Y1V1 = I1
(note that I2 = I1 )
Node2: I2 = Y(V2 V1 )
Y2V2 = I2
Node1:
z
z
z
z
Microelectrics (III)
7-45
(7.54)
7-46
23
V 's = Vs
r
, R 's = (Rs + rx ) r , and R 'L = R L ro
Rs + rx + r
CT = C + (1 + gm R 'L )C
H =
Microelectrics (III)
1
CT Rs
7-47
fH =
1
H
= 128.7kHz
=
2 2 15.3 10 12 80.8 103
Microelectrics (III)
7-48
24
KCL at G :
Vs (s ) Vgs
=
+ sC gsVgs + sC gd (Vgs Vo )
Rs
Rs
Vo (s )
R 'L
s
(gm /C gd )
Vo (s )
= AM
Vs (s )
1 + s[C gs + C gd (1 + gm R 'L ) + C gd (R 'L / Rs )]Rs + s 2C gsC gd Rs R 'L
(7.61)
The amplifier has a zero with frequency z = gm/Cgd and two poles whose
frequencies can be determined from the denominator polynomial.
(Note that: z = gm/C for the CE amp.)
Microelectrics (III)
7-49
Determine the two poles, P1 and P2, from the denominator polynomial D(s):
Assume that z and P2 are indeed at much much higher frequencies than
the dominant pole P1.
s
s
1 +
D (s ) = 1 +
P 1 P 2
1
1
s2
s
s2
+
= 1 + s
+
1+
+
P 1 P 1 P 2
P 1 P 2 P 1P 2
(7.62)
Equating the coefficients of the s terms in Eqs. (7.61) and (7.62) gives
1
P 1 =
[C gs + C gd (1 + gm R 'L ) + C gd (R 'L /Rs )]Rs
Equating the coefficients of the s2 terms in Eqs. (7.61) and (7.62) gives
P 2 =
C gsC gd R 'L
g
For gmRL >> 1 and RL < Rs , P 2 m which shows that P2 is very high.
C gs
Microelectrics (III)
7-50
25
Microelectrics (III)
7-51
Microelectrics (III)
7-52
26
Ve = V
1
I e = V + sC gmV = Ve + gm + sC
r
r
Ie
1
1
= + gm + sC = + sC
Ve r
re
(the input admittance looking into the emitter)
Microelectrics (III)
7-53
7-54
27
7-55
R 's = r 1 (rx1 + Rs )
Microelectrics (III)
7-56
28
r 2 1/ gm 2 = re 2
n Since re2 << ro1, we see that between C1 and ground the total resistance is re2 || ro1 re2
1
We have 2 =
which is much higher than the frequency of the pole that
T 2
C 2re 2
arises due to the interaction of Rs and the input capacitance of Q1.
o Ignore C2 ; Vc1 gm1V1re2 V1 ; The gain between B1 and C1 is approximately 1.
Thus by Miller theorem, C1 (B1 and C1) 2C1 (B1 and ground) , 2C1 (C1 and ground)
Due to RC low-pass circuit, 1 =
where Rs is large.
1
R 's (C 1 + 2C 1 )
1 < 2
3 =
1
C 2R L
Microelectrics (III)
1 =
1
R 's (C 1 + 2C 1 )
7-57
2 =
1
T 2
C 2re 2
3 =
1
C 2R L
Vo
r
= gm R L
Vs
r + rx + Rs
7-58
29
Microelectrics (III)
7-59
Transfer function:
Vo (s )
1 + s / z
= AM
(1 + s /P 1 )(1 + s /P 2 )
Vs (s )
It do not reveal whether or not one of the
poles is dominant.
z Determine zeroes:
1
+ sC
Vo = (gm + y )V RE where y =
Vo = 0 : n V = 0 z = 0 or y = sZ =
1
o gm + y = 0 gm + + sZ C = 0
r
Microelectrics (III)
7-60
sZ =
1
gm + 1/r
=
T
C
C re
30
Since the frequency of the zero is quite high, it will normally play a minor
role in determining the high-frequency response of the emitter follower.
z Determine the dominant pole:
Which is the dominant pole? It depends on the values of Rs and RE.
In most applications Rs is large, and it together with the input capacitance
provides a dominant pole.
Z eq
Vo
(g + y )RE
= m
yV
y
Microelectrics (III)
1
1 + gm RE
+ RE
+ Z eq =
y
y
7-61
1
(1 + gm RE )
Z b ' = (1 + gm RE ) r
+ RE
+ RE = (1 + gm RE )r
sC
sC
(1 + gm RE )
Q (1 + gm R E )r
>> R E
sC
Z b ' (1 + gm RE )r
(1 + gm RE )
sC
C
C +
[R 's (1 + gm RE )r ]
1 + gm RE
This pole is usually dominant, its frequency is normally quite high, giving the
emitter follower a wide bandwidth.
Microelectrics (III)
7-62
31
z Similarly, the results of the emitter follower can be applied to the case of an
FET by replace Rs with Rs , r with , C with Cgd , and C with Cgs .
Microelectrics (III)
P =
C gd
1
C gs
Rs
+
1 + gm R L
7-63
Microelectrics (III)
7-64
32
B2
7-65
gm
C + C =
1
= 25
40mA /V
gm
40
2f T
40
= 15.9PF
2 400 106
C = 2pF
=
C = 15.9 2 = 13.9pF
Microelectrics (III)
7-66
33
V0 V0 Ve1 Vb1
=
VS Ve1 Vb1 VS
Q Ve1 = ie1 (RE 1 r 2 ) = ( 1 + 1)ib1 (R E1 r 2 )
Rin = R1 R2 {( 1 + 1)[re1 + (RE1 r 2 )]} = 38K
Vb1 = ( 1 + 1)[re1 + (R E 1 r 2 )]ib1
V
Rin
Q1 : b1 =
= 0.9
(R E1 r 2 )
V
VS
Rin + RS
e1 =
Vb1 (RE 1 r 2 ) + re1
(RE 1 r 2 )
Ve1
=
= 0.98 LL The gain of Q1(CC)
Vb1 (R E1 r 2 ) + re1
V0 = gm 2Vb 2 (RC R L )
V0
V
= 0 = gm 2 (RC R L ) = 80 LL The gain of Q2 (CE )
V0
Ve1 Vb 2
= gm 2 (RC R L )
Vb 2
V
V V V
0 = 0 e1 b1 = (80) (0.98) (0.9) = 70.6 V /V
VS Ve1 Vb1 VS
q High-frequency response:
VC 2 = gm 2V 2R 'L
and Vb 2 = V 2
K =
VC 2
= gm 2R L '
Vb 2
Microelectrics (III)
R 'L = RC RL
7-67
R 'S = RS R1 R2
V 'S =
R1 R 2
VS
(R1 R2 ) + RS
CT = C 2 + C 2 (1 + gm 2R 'L )
R 'L = RC R L
R 's +(RE 2 + r 2 )
= 80
1 + gm (RE 2 + r 2 )
RT = R 'E 1
r 2 + R 's
= 59
1 + 1
Upper 3 dB freq.
Microelectrics (III)
7-68
fH
1
= 7MHZ
2
Ching-Yuan Yang / EE, NCHU
34
Microelectrics (III)
7-69
Equivalent half-circuit
r
Vo
r
gm RC
gm (RC ro )
=
r + Rs / 2
Vs
r + (Rs / 2 + rx )
1
[(Rs / 2) r ][C + C (1 + gm RC )]
7-70
35
Ao
Vo
=
Vs 1 + s /P
The 3-dB frequency H = P .
p Transfer function
z Note that the common-emitter amplifier has the dominant pole due to the
Miller effect, a nondominant pole and a zero.
Microelectrics (III)
7-71
Microelectrics (III)
( + 1)(re + RE )
RC
Vo
=
Vs
Rs / 2 + rx + ( + 1)(re + RE ) RE + re
7-72
36
(1) I RE = gmV +
V
I
r
(5) I (
VR 'S
R 'S
V
+ I R 'S
r
V
V + gmV RE + r RE IRE
IR
V
1
V
V + gmV R E +
R E E
=
+
r R 'S
r
R 'S
1
R 'S
7-73
1
R 'S +R E
g R
RE
1
) = V +
+ m E +
R 'S
R 'S
R 'S r
r R 'S
V
I )RE
r
V R 'S +RE
1 + gm R E
=
+ V
R 'S
R 'S
r
1
1 1 + gm RE
I
=
= +
V R r
R 'S +RE
R = r
R 'S +RE
1 + gm RE
o Determine R (Vs = 0, C = 0)
(1) I RE = gmV +
V
1
1
= gm + V = V
r
r
re
(2) V + = VR 'S = V + VE = V + I RE RE = V +
(3) I R 'S =
(4) I =
VR 'S
R 'S
RE
V
re
R
1
V 1 + E
R 'S
re
V
1
V
R
V 1 + E
+ I R 'S = +
r
r RS '
re
1
1
RE
= V +
1 + r
'
r
R
S
e
Microelectrics (III)
7-74
37
1
1
(5) VC = V = (I + gmV )RC = V +
r R 'S
R
1 + E + gm RC
re
1
RE
= V +
1 + r + gm RC
'
r
R
S
e
e
V (6)
(7) R = =
=
I (4)
1+
1
RE
R
1 + E + gm RC
V + V +
re
re
re R 'S
RE 1
R
1
R
1 + E RC + gm RC
+ +
1 + E + gm RC
re
re
re
re R 'S
L(7.100 )
= RC +
RE
1
1
1
1
R
1 +
1 + E
+
+
r R 'S
re
r R 'S
re
z Summary:
The use of emitter-degeneration resistors results in an increase in H.
The gain-bandwidth product produce remains constant. (Q the lowfrequency gain decreases)
Trade-off between gain and bandwidth through the appropriate selection of RE.
Microelectrics (III)
7-75
7-76
38
z Frequency response
CMRR 20 log
Ad
Acm
Ad : Differential Gain
Acm : Common-Mode Gain
Description:
The CM gain falls off at high frequencies
because of the internal capacitances C
and C and because of the pole created
by C/2.
CMRR of a differential amplifier falls off
at high frequencies due to the increase
of the CM gain with frequency.
Microelectrics (III)
7-77
7-78
39
Here the zero dc gate currents make the circuit immune to dc imbalances
caused by Rs. Some dc imbalance still exists due to the difference in dc
voltages at the drains.
Microelectrics (III)
7-79
Q1: ie =
vb1
v
= b1
re1 + re 2 2re
V
Q re1 = re 2 = re = T
I /2
vb1
2re
vb1
v 0 = iC 2RC =
RC
2re
Q2: iC 2 = ie =
v 0 RC
=
vb1
2re
vb1
2r
2re ( + 1)
=
=
vS
RS + 2r RS + 2re ( + 1)
and
Microelectrics (III)
RC
v 0 v 0 vb1 RC
2re ( + 1)
=
=
vS v b1 vS
2re RS + 2re ( + 1) 2re + RS /( + 1)
7-80
40
z High-frequency response
Equivalent circuit (ignore rx and ro):
Input side:
C
+ C
2
1
1
1
=
=
2 RC 2
C
(RS 2r )
+ C
2
R = RS 2r
f P1
C=
Output side:
R = RC
fP2 =
Microelectrics (III)
7-81
C = C
1
1
=
2RC 2RCC
CC stage: Q1 and Q4
CB stage: Q2 and Q3
Equivalent half-circuit:
V 2r
Vb1 = S
2 RS + 2r
V
ie1 = ie 2 = b1
2re
R V
2r
V0
= iC 2RC = ie 2RC =
Vb1 = C S
2
2re
2re 2 RS + 2r
Microelectrics (III)
V0 re ( + 1)RC
RC
=
=
RS
VS
re (RS + 2r )
+ 2re
+1
7-82
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