PD - 9.

1501A

IRFIZ24N
HEXFET Power MOSFET
Advanced Process Technology
Isolated Package
l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm
l Fully Avalanche Rated
Description
l

VDSS = 55V
RDS(on) = 0.07

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.

ID = 14A

The TO-220 Fullpak eliminates the need for additional

insulating hardware in commercial-industrial
applications. The moulding compound used provides
a high isolation capability and a low thermal resistance
between the tab and external heatsink. This isolation
is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to
a heatsink using a single clip or by a single screw
fixing.

TO-220 FULLPAK

Absolute Maximum Ratings

Parameter
ID @ TC = 25C
ID @ TC = 100C
IDM
PD @TC = 25C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG

Continuous Drain Current, VGS @ 10V

Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw

Max.

Units

14
10
68
29
0.19
20
71
10
2.9
5.0
-55 to + 175

A
W
W/C
V
mJ
A
mJ
V/ns
C

300 (1.6mm from case )

10 lbfin (1.1Nm)

Thermal Resistance
Parameter
RJC
RJA

Junction-to-Case
Junction-to-Ambient

Typ.

Max.

Units

5.2
65

C/W
8/25/97

IRFIZ24N
Electrical Characteristics @ TJ = 25C (unless otherwise specified)

RDS(on)
VGS(th)
gfs

Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance

Qg
Qgs
Qgd
td(on)
tr
td(off)
tf

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time

Min.
55

2.0
4.5

Typ.

0.052

4.9
34
19
27

IDSS

Drain-to-Source Leakage Current

LD

Internal Drain Inductance

4.5

LS

Internal Source Inductance

7.5

Ciss
Coss
Crss
C

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance

370
140
65
12

V(BR)DSS
V(BR)DSS/TJ

I GSS

Max. Units
Conditions

V
VGS = 0V, ID = 250A
V/C Reference to 25C, ID = 1mA
0.07

VGS = 10V, ID = 7.8A

4.0
V
VDS = VGS , ID = 250A

S
VDS = 25V, I D = 10A
25
VDS = 55V, VGS = 0V
A
250
VDS = 44V, VGS = 0V, TJ = 150C
100
VGS = 20V
nA
-100
VGS = -20V
20
ID = 10A
5.3
nC
VDS = 44V
7.6
VGS = 10V, See Fig. 6 and 13

VDD = 28V

ID = 10A
ns

RG = 24

RD = 2.6, See Fig. 10

Between lead,

6mm (0.25in.)
nH
G
from package

and center of die contact

VGS = 0V

V
DS = 25V
pF

= 1.0MHz, See Fig. 5

= 1.0MHz

Source-Drain Ratings and Characteristics

IS
ISM

VSD
trr
Qrr
ton

Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time

Min. Typ. Max. Units

Conditions
D
MOSFET symbol
14

showing the
A
G
integral reverse

68
p-n junction diode.
S
1.3
V
TJ = 25C, IS = 7.8A, VGS = 0V
56
83
ns
TJ = 25C, IF = 10A
120 180
C
di/dt = 100A/s
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

Repetitive rating; pulse width limited by

Pulse width 300s; duty cycle 2%.

max. junction temperature. ( See fig. 11 )

VDD = 25V, starting TJ = 25C, L = 1.0mH

t=60s, =60Hz

RG = 25, IAS = 10A. (See Figure 12)

ISD 10A, di/dt 280A/s, VDD V(BR)DSS,

TJ 175C

Uses IRFZ24N data and test conditions

IRFIZ24N
100

100

VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V

10

4 .5V
2 0 s PU LSE W ID TH
TT
CJ= 2 5C

1
0.1

VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
TOP

I , D ra in -to -S o u rc e C u rre n t (A )
D

I , D ra in -to -S o u rc e C u rre n t (A )
D

TOP

10

10

4 .5V

20 s P UL SE W IDTH
TT
CJ = 17 5C

100

0.1

V D S , D rain-to-S ource V oltage (V )

3.0

R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce
(N o rm a li ze d )

I D , D r ain- to-S ourc e C urre nt (A )

TJ = 2 5 C
T J = 1 7 5 C

10

V DS = 2 5 V
2 0 s P U L SE W ID TH
5

V G S , Ga te-to-S o urce V oltage (V )

Fig 3. Typical Transfer Characteristics

100

Fig 2. Typical Output Characteristics

100

10

V D S , Drain-to-Source V oltage (V)

Fig 1. Typical Output Characteristics

10

I D = 1 7A

2.5

2.0

1.5

1.0

0.5

V G S = 10 V

0.0
-60

-40 -20

20

40

60

80

100 120 140 160 180

T J , Junction T em perature (C )

Fig 4. Normalized On-Resistance

Vs. Temperature

IRFIZ24N
V GS
C is s
C rs s
C os s

C , C a p a c ita n c e (p F )

600

500

C iss

400

C os s

=
=
=
=

20

0V ,
f = 1MH z
C gs + C g d , Cds SH OR TED
Cgd
C ds + C gd

V G S , G a te -to -S o u rc e V o lta g e (V )

700

V DS = 4 4V
V DS = 2 8V

16

12

300

200

I D = 1 0A

C rss

100

0
10

FO R TES T C IR CU IT
SEE FIG U R E 13

A
1

100

V D S , Drain-to-Source V oltage (V)

12

16

A
20

Q G , Total Gate Charge (nC )

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

1000

OPE R ATIO N IN TH IS A RE A LIMITE D

BY R D S(o n)

I D , D ra in C u rre n t (A )

I S D , R e v e rse D ra in C u rre n t (A )

TJ = 175 C
TJ = 25C
10

VG S = 0 V

1
0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

V S D , Source-to-D rain V oltage (V )

Fig 7. Typical Source-Drain Diode

Forward Voltage

2.0

100
10s

10

100 s

1m s

T C = 25 C
T J = 17 5C
S ing le Pulse

1
1

10m s
10

V D S , Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

A
100

IRFIZ24N
15

RD

VDS

ID , Drain Current (A)

VGS

D.U.T.

RG

- VDD

10

10V
Pulse Width 1 s
Duty Factor 0.1 %

Fig 10a. Switching Time Test Circuit

VDS
90%

0
25

50

75

100

125

TC , Case Temperature

150

175

( C)

Fig 9. Maximum Drain Current Vs.

Case Temperature

10%
VGS
td(on)

tr

t d(off)

tf

Fig 10b. Switching Time Waveforms

Thermal Response

(Z thJC )

10

D = 0.50
0.20

0.10
0.05
0.02
0.01
0.1

SINGLE PULSE
(THERMAL RESPONSE)

PDM
t1
t2
Notes:
1. Duty factor D =
t1 / t 2
2. Peak T J = P DM x Z thJC + T C

0.01
0.00001

0.0001

0.001

0.01

0.1

t1, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRFIZ24N

D.U.T.
RG

+
V
- DD
IAS

5.0 V

tp

0.01

Fig 12a. Unclamped Inductive Test Circuit

V(BR)DSS

E A S , S in g le P u ls e A va la n c h e E n e rg y (m J)

140

L
VDS

TO P
120

BOT TO M
100

80

60

40

20

V D D = 2 5V

25

tp

50

A
75

100

125

150

175

Starting TJ , Junction T emperature (C)

VDD

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

VDS

IAS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

50K

QG

12V

.2F
.3F

10 V
QGS

ID
4.2A
7 .2A
10A

D.U.T.

QGD

+
V
- DS

VGS

VG

3mA

Charge

Fig 13a. Basic Gate Charge Waveform

IG

ID

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

IRFIZ24N
Peak Diode Recovery dv/dt Test Circuit
+

D.U.T

Circuit Layout Considerations

Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer

RG

Driver Gate Drive

P.W.

dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test

Period

D=

VDD

P.W.
Period
VGS=10V

D.U.T. ISD Waveform

Reverse
Recovery
Current

Body Diode Forward

Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt

Re-Applied
Voltage

Body Diode

VDD

Forward Drop

Inductor Curent
Ripple 5%

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFETS

ISD

IRFIZ24N
Package Outline
TO-220 Fullpak Outline
Dimensions are shown in millimeters (inches)
10.60 (.41 7)
10.40 (.40 9)

3.40 (.133 )
3.10 (.123 )

4.8 0 (.189)
4.6 0 (.181)

-A 3.70 (.145)
3.20 (.126)

16 .0 0 (.630)
15 .8 0 (.622)

2 .80 (.110)
2 .60 (.102)
LE AD A S SIGN M E N T S
1 - GA TE
2 - D R AIN
3 - SO U R C E

7 .10 (.280)
6 .70 (.263)

1.15 (.04 5)
M IN .

N O T ES :
1 D IM EN SION IN G & T O LER A N C IN G
PE R AN S I Y14.5 M , 1982

3
2 C O N TR OLLIN G D IM EN S ION : IN C H .
3.30 (.130 )
3.10 (.122 )
-B-

13 .7 0 (.540)
13 .5 0 (.530)
C

A
3X

1.40 (.05 5)
1.05 (.04 2)

3X

0.9 0 (.035)
3X 0.7 0 (.028)
0.25 (.010 )

A M

0.48 (.019)
0.44 (.017)

2.85 (.112 )
2.65 (.104 )

2 .54 (.100)
2X

M IN IM U M C R E EP AG E
D IST A NC E B ET W E EN
A-B -C -D = 4.80 (.189 )

Part Marking Information

TO-220 Fullpak
E XAM PLE : T HIS IS A N IRF I840G
W ITH AS SE MBLY
LOT CODE E401

INT ER NAT IONA L

RE CTIF IER

PA RT NU MBE R
IRF I840G

LOGO
E 401 9 24 5

AS SE MBLY
LOT COD E

D ATE CODE
(YYW W )
YY = YE AR
W W = W E EK

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Data and specifications subject to change without notice.
8/97

Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/