APT150GN60JDQ4

600V

TYPICAL PERFORMANCE CURVES

APT150GN60JDQ4

Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low VCE(ON) and are ideal for low frequency applications that require absolute minimum
conduction loss. Easy paralleling is a result of very tight parameter distribution and
a slightly positive VCE(ON) temperature coefcient. A built-in gate resistor ensures
extremely reliable operation, even in the event of a short circuit fault. Low gate charge
simplies gate drive design and minimizes losses.

ISOTOP

600V Field Stop

Trench Gate: Low VCE(on)
Easy Paralleling
Intergrated Gate Resistor: Low EMI, High Reliability

OT

22

"UL Recognized"
file # E145592

C
G
E

Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS

MAXIMUM RATINGS
Symbol

All Ratings: TC = 25C unless otherwise specied.

Parameter

APT150GN60JDQ4

VCES

Collector-Emitter Voltage

600

VGE

Gate-Emitter Voltage

30

I C1

Continuous Collector Current @ TC = 25C

220

I C2

Continuous Collector Current @ TC = 110C

123

I CM
SSOA
PD
TJ,TSTG
TL

Pulsed Collector Current

UNIT
Volts

Amps

450

Switching Safe Operating Area @ TJ = 175C

450A @ 600V

Total Power Dissipation

536

Operating and Storage Junction Temperature Range

Watts

-55 to 175

Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.

300

STATIC ELECTRICAL CHARACTERISTICS

V(BR)CES

Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4mA)

600

VGE(TH)

Gate Threshold Voltage

VCE(ON)

I CES
I GES
RG(int)

(VCE = VGE, I C = 2400A, Tj = 25C)

Collector-Emitter On Voltage (VGE = 15V, I C = 150A, Tj = 25C)

Collector-Emitter On Voltage (VGE = 15V, I C = 150A, Tj = 125C)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25C)

TYP

MAX

5.0

5.8

6.5

1.05

1.45

1.85
50

600
2

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

TBD

Gate-Emitter Leakage Current (VGE = 20V)

Intergrated Gate Resistor

Volts

1.65

Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125C)

Units

nA

4-2006

MIN

Rev A

Characteristic / Test Conditions

050-7625

Symbol

APT150GN60JDQ4

DYNAMIC CHARACTERISTICS
Symbol

Test Conditions

Characteristic

Cies

Input Capacitance

Coes

Output Capacitance

Cres

Reverse Transfer Capacitance

VGEP

Gate-to-Emitter Plateau Voltage

Qg

Total Gate Charge

Gate-Emitter Charge

Qgc

Gate-Collector ("Miller ") Charge

td(on)
tr
td(off)
tf

Turn-on Switching Energy

Eon2

Turn-on Switching Energy (Diode)

tr
tf
Eon1
Eon2
Eoff

UNIT
pF
V
nC

510
450

VGE = 15V

430

RG = 1.0 7

8810

ns

60

TJ = +25C

MAX

65

110

8615

4295
Inductive Switching (125C)

44

VCC = 400V

110

VGE = 15V

Turn-off Delay Time

95

RG = 1.0 7

44

Turn-on Switching Energy (Diode)

55

ns

480

I C = 150A

Current Fall Time

Turn-off Switching Energy

970

VCC = 400V

Current Rise Time

Turn-on Switching Energy

9.5

VGE = 15V

I C = 150A

Eon1

td(off)

Gate Charge

44

Current Fall Time

Turn-on Delay Time

300

Inductive Switching (25C)

Turn-off Delay Time

td(on)

350

f = 1 MHz

15V, L = 100H,VCE = 600V

Current Rise Time

Turn-off Switching Energy

VGE = 0V, VCE = 25V

TJ = 175C, R G = 4.3 7, VGE =

Turn-on Delay Time

Eoff

9200

I C = 150A

Switching Safe Operating Area

TYP

Capacitance

VCE = 300V

Qge

SSOA

MIN

8880

TJ = +125C

9735

66

5460

THERMAL AND MECHANICAL CHARACTERISTICS

Symbol

Characteristic

RJC

Junction to Case (IGBT)

RJC

Junction to Case (DIODE)

VIsolation
WT

Torque

RMS Voltage (50-60Hz Sinusoidal

MIN

TYP

MAX

0.28
.33
Waveform from Terminals to Mounting Base for 1 Min.)

Package Weight

Maximum Terminal & Mounting Torque

2500

UNIT
C/W
Volts

1.03

oz

29.2

gm

10

Ibin

1.1

Nm

1 Repetitive Rating: Pulse width limited by maximum junction temperature.

2 For Combi devices, Ices includes both IGBT and FRED leakages

050-7625

Rev A

4-2006

3 See MIL-STD-750 Method 3471.

4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in gure 21, but with a Silicon Carbide diode.
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452)
APT Reserves the right to change, without notice, the specications and information contained herein.

TYPICAL PERFORMANCE CURVES

= 15V

TJ = -55C
IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)

TJ = 25C
250

TJ = 125C
200

TJ = 175C

150
100
50
0

TJ = -55C
TJ = 25C
TJ = 125C
TJ = 175C

250
200
150
100
50
0

250

10V

200
150

9V

100
8V

50

7V

FIGURE 2, Output Characteristics (TJ = 125C)

16
VGE, GATE-TO-EMITTER VOLTAGE (V)

IC, COLLECTOR CURRENT (A)

300

11V

0
5
10
15
20
25
30
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)

FIGURE 1, Output Characteristics(TJ = 25C)

250s PULSE
TEST<0.5 % DUTY
CYCLE

300

0
0.5 1.0
1.5 2.0
2.5 3.0
3.5
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)

350

12, 13 &15V

350

300

VCE = 120V

12

VCE = 300V

10

VCE = 480V

8
6
4
2
0

2
4
6
8
10
12
14
VGE, GATE-TO-EMITTER VOLTAGE (V)

I = 150A
C
T = 25C

14

200

3.5

IC = 300A

3.0

TJ = 25C.
250s PULSE TEST
<0.5 % DUTY CYCLE

2.5
2.0

IC = 150A

1.5

IC = 75A

1.0
0.5
0

10
12
14
16
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage

1.00
0.95
0.90
0.85
0.80
0.75

0.70
-50 -25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
FIGURE 7, Threshold Voltage vs. Junction Temperature

IC, DC COLLECTOR CURRENT(A)

VGS(TH), THRESHOLD VOLTAGE

(NORMALIZED)

1.05

3.0
2.5

IC = 300A

2.0

IC = 150A
1.5

IC = 75A

1.0
0.5
0

VGE = 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE

25
50
75 100 125 150 175
TJ, Junction Temperature (C)
FIGURE 6, On State Voltage vs Junction Temperature
300

1.15
1.10

1200

FIGURE 4, Gate Charge

VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)

VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)

FIGURE 3, Transfer Characteristics

4.0

400
600
800 1000
GATE CHARGE (nC)

250
200
150
100
50
0
-50 -25

0 25 50 75 100 125 150 175

TC, CASE TEMPERATURE (C)
FIGURE 8, DC Collector Current vs Case Temperature

4-2006

GE

Rev A

APT150GN60JDQ4

400

050-7625

350

td (OFF), TURN-OFF DELAY TIME (ns)

td(ON), TURN-ON DELAY TIME (ns)

50

VGE = 15V

40
30
20
VCE = 400V

10 T = 25C, or 125C
J
0

RG = 1.0
L = 100H

RG = 1.0, L = 100H, VCE = 400V

100 VCE = 400V

RG = 1.0
L = 100H

30

160

TJ = 125C, VGE = 15V

140
TJ = 25 or 125C,VGE = 15V

250

tf, FALL TIME (ns)

tr, RISE TIME (ns)

200

180

200
150

120
100
80
60

TJ = 25C, VGE = 15V

40
20
0

30

40,000

EOFF, TURN OFF ENERGY LOSS (J)

30,000
TJ = 125C

25,000
20,000
15,000
10,000

TJ = 25C

5,000

Eon2,300A

50,000
40,000
30,000
Eoff,300A
Eon2,150A

10,000

Eon2,75A

Eoff,75A

Eoff,150A

20
15
10
5
RG, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance

SWITCHING ENERGY LOSSES (J)

12,000

TJ = 125C

10,000
8,000
6,000
4,000

TJ = 25C

2,000

40,000

= 400V
V
CE
= +15V
V
GE
T = 125C

20,000

14,000

70 110 150 190 230 270 310

30
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current

70 110 150 190 230 270 310

30
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current

60,000

= 400V
V
CE
= +15V
V
GE
R = 1.0

16,000

70,000

30

18,000

= 400V
V
CE
= +15V
V
GE
R = 1.0

35,000

RG = 1.0, L = 100H, VCE = 400V

70 110 150 190 230 270 310

ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current

70 110 150 190 230 270 310

ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current

EON2, TURN ON ENERGY LOSS (J)

VGE =15V,TJ=25C

400

50

SWITCHING ENERGY LOSSES (J)

VGE =15V,TJ=125C

300

110 150 190 230 270 310

70
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current

100

4-2006

400

300

Rev A

500

110 150 190 230 270 310

70
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
30

350

050-7625

APT150GN60JDQ4

600

60

= 400V
V
CE
= +15V
V
GE
R = 1.0

35,000

Eon2,300A

30,000
25,000
20,000

Eoff,300A

15,000
Eon2,150A

10,000
Eoff,150A

5,000
0

Eoff,75A

Eon2,75A

125
100
75
50
25
TJ, JUNCTION TEMPERATURE (C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
0

TYPICAL PERFORMANCE CURVES

20,000

500

C, CAPACITANCE ( F)

IC, COLLECTOR CURRENT (A)

Cies

10,000

APT150GN60JDQ4

500

100
50
Coes

400

300

200

100

Cres
0

10
0
10
20
30
40
50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage

0
100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 18,Minimim Switching Safe Operating Area

D = 0.9

0.25
0.20

0.7

0.15

0.5
Note:

0.10

PDM

ZJC, THERMAL IMPEDANCE (C/W)

0.30

0.3

t1
t2

0.05
0

0.1

SINGLE PULSE

Duty Factor D = 1/t2

Peak TJ = PDM x ZJC + TC

0.05
10-5

10-4

10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration

1.0

0.00770

Power
(watts)
0.184

0.300

Case temperature. (C)

FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL

= min (fmax, fmax2)

0.05
fmax1 =
td(on) + tr + td(off) + tf

T = 125C
J
T = 75C
C
D = 50 %
V
= 400V
CE
R = 1.0

max

fmax2 =

Pdiss - Pcond
Eon2 + Eoff

Pdiss =

TJ - TC
RJC

30

50

70 90 110 130 150 170 190

IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current

4-2006

0.0964

Rev A

Junction
temp. (C)

10

050-7625

RC MODEL

FMAX, OPERATING FREQUENCY (kHz)

50

APT150GN60JDQ4

APT100DQ60

Gate Voltage

10%

TJ = 125C

td(on)
tr

IC

V CC

V CE

Collector Current
90%

5%

10%

5%
Collector Voltage

A
Switching Energy

D.U.T.

Figure 22, Turn-on Switching Waveforms and Denitions

Figure 21, Inductive Switching Test Circuit

90%
Gate Voltage
td(off)

TJ = 125C

90%

tf

Collector Voltage
10%

0
Collector Current
Switching Energy

050-7625

Rev A

4-2006

Figure 23, Turn-off Switching Waveforms and Denitions

TYPICAL PERFORMANCE CURVES

APT150GN60JDQ4

ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE

MAXIMUM RATINGS
Symbol
IF(AV)
IF(RMS)
IFSM

All Ratings: TC = 25C unless otherwise specied.

APT100GN60LDQ4

Characteristic / Test Conditions

Maximum Average Forward Current (TC = 103C, Duty Cycle = 0.5)

100

RMS Forward Current (Square wave, 50% duty)

146

Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms)

UNIT
Amps

1000

STATIC ELECTRICAL CHARACTERISTICS

Symbol
VF

Characteristic / Test Conditions

MIN

Forward Voltage

TYP

IF = 150A

1.83

IF = 300A

2.33

IF = 150A, TJ = 125C

1.47

MAX

UNIT
Volts

DYNAMIC CHARACTERISTICS
Symbol

Characteristic

Test Conditions

trr

Reverse Recovery Time

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

IRRM

IF = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25C

Reverse Recovery Time

Qrr

Reverse Recovery Charge

IF = 100A, diF/dt = -200A/s

VR = 400V, TC = 125C

Maximum Reverse Recovery Current

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

IRRM

VR = 400V, TC = 25C

Maximum Reverse Recovery Current

trr

IRRM

IF = 100A, diF/dt = -200A/s

IF = 100A, diF/dt = -1000A/s

VR = 400V, TC = 125C

Maximum Reverse Recovery Current

MIN

TYP

MAX

UNIT

34

160

290

220

ns

1530

nC

13

100

ns

2890

nC

44

Amps

ns
nC

Amps

Amps

D = 0.9

0.30
0.25

0.7

0.20
0.5

Note:

0.15

PDM

0.3

0.10

t1
t2

0.05
0
10-5

0.1
0.05
0.05

Duty Factor D = 1/t2

Peak TJ = PDM x ZJC + TC

SINGLE
SINGLE PULSE
PULSE
10-4

10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (seconds)
FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
RC MODEL

0.0182

0.188

0.361

0.0743

5.17

Case temperature (C)

FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL

Rev A

Power
(watts)

0.0673

4-2006

Junction
temp (C)

050-7625

Z JC, THERMAL IMPEDANCE (C/W)

0.35

300
trr, REVERSE RECOVERY TIME
(ns)

TJ = 25C

250
IF, FORWARD CURRENT
(A)

APT150GN60JDQ4

300

200
TJ = 175C
150
TJ = 125C

100
50

T =125C
J
V =400V
R

250

200A

200

100A
50A

150
100
50

TJ = -55C
0

0.5
1.0
1.5
2.0
2.5
3.0
VF, ANODE-TO-CATHODE VOLTAGE (V)
Figure 25. Forward Current vs. Forward Voltage

0
200
400
600
800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE(A/s)
Figure 26. Reverse Recovery Time vs. Current Rate of Change

60
T =125C
J
V =400V

3500

200A

3000
100A

2500
2000

50A

1500
1000
500
0

0
200
400
600
800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE (A/s)
Figure 27. Reverse Recovery Charge vs. Current Rate of Change

0.6

IRRM
Qrr

CJ, JUNCTION CAPACITANCE

(pF)

4-2006
Rev A

Duty cycle = 0.5

T =175C
J

100
80
60
40
20

1400

050-7625

10

120

25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (C)
Figure 29. Dynamic Parameters vs. Junction Temperature

1200
1000
800
600
400
200
0

50A

20

140

0.2
0.0

100A

30

160

trr

0.4

200A

40

180

trr

0.8

50

0
200
400
600
800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE (A/s)
Figure 28. Reverse Recovery Current vs. Current Rate of Change

Qrr

1.0

T =125C
J
V =400V

IF(AV) (A)

Kf, DYNAMIC PARAMETERS

(Normalized to 1000A/s)

1.2

IRRM, REVERSE RECOVERY CURRENT

(A)

Qrr, REVERSE RECOVERY CHARGE

(nC)

4000

10
100 200
VR, REVERSE VOLTAGE (V)
Figure 31. Junction Capacitance vs. Reverse Voltage

25

50

75
100
125
150
175
Case Temperature (C)
Figure 30. Maximum Average Forward Current vs. CaseTemperature

TYPICAL PERFORMANCE CURVES

APT150GN60JDQ4

Vr
diF /dt Adjust

+18V

APT60M75L2LL

0V
D.U.T.
30H

trr/Qrr
Waveform

PEARSON 2878
CURRENT
TRANSFORMER
Figure 32. Diode Test Circuit

IF - Forward Conduction Current

diF /dt - Rate of Diode Current Change Through Zero Crossing.

IRRM - Maximum Reverse Recovery Current.

trr - Reverse Recovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.

Zero
5
3

0.25 IRRM

Qrr - Area Under the Curve Defined by IRRM and trr.

Figure 33, Diode Reverse Recovery Waveform and Definitions

SOT-227 (ISOTOP) Package Outline

31.5 (1.240)
31.7 (1.248)

25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)

4.0 (.157)
4.2 (.165)
(2 places)

14.9 (.587)
15.1 (.594)

1.95 (.077)
2.14 (.084)

* Emitter/Anode

30.1 (1.185)
30.3 (1.193)

* Emitter/Anode terminals are

shorted internally. Current
handling capability is equal
for either Emitter/Anode terminal.

38.0 (1.496)
38.2 (1.504)

* Emitter/Anode
ISOTOP is a Registered Trademark of SGS Thomson.

Collector/Cathode

Dimensions in Millimeters and (Inches)

Gate

4-2006

3.3 (.129)
3.6 (.143)

Rev A

r = 4.0 (.157)
(2 places)

8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)

W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)

050-7625

7.8 (.307)
8.2 (.322)

11.8 (.463)
12.2 (.480)