Академический Документы
Профессиональный Документы
Культура Документы
TYPE
VDSS
RDS(on)
ID
STD2NC60
600V
< 3.6
2A
2
1
1
DPAK
DESCRIPTION
The PowerMESHII is the evolution of the first
generation of MESH OVERLAY. The layout refinements introduced greatly improve the Ron*area
figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate
charge and ruggedness.
IPAK
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
SWITH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVERS
Parameter
Value
Unit
600
600
30
ID
ID
1.3
IDM ()
PTOT
60
0.48
W/C
Derating Factor
dv/dt(1)
Tstg
Tj
V/ns
65 to 150
150
January 2001
1/9
STD2NC60
THERMAL DATA
Rthj-case
Rthj-amb
Tl
C/W
100
C/W
275
AVALANCHE CHARACTERISTICS
Symbol
Max Value
Unit
IAR
Parameter
EAS
80
mJ
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 A, VGS = 0
IDSS
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = 30V
V(BR)DSS
Min.
Typ.
Max.
600
Unit
V
50
100
nA
ON (1)
Symbol
Parameter
Test Conditions
VGS(th)
RDS(on)
Static Drain-source On
Resistance
ID(on)
Min.
Typ.
Max.
Unit
3.3
3.6
DYNAMIC
Symbol
gfs (1)
2/9
Parameter
Forward Transconductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 1.5A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
Max.
Unit
1.2
400
pF
57
pF
pF
STD2NC60
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
td(on)
tr
Parameter
Turn-on Delay Time
Rise Time
Qg
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Test Conditions
Min.
Typ.
Max.
Unit
13
ns
ns
15
22
nC
6.2
nC
5.6
nC
SWITCHING OFF
Symbol
tr(Voff)
Parameter
Off-voltage Rise Time
tf
Fall Time
tc
Cross-over Time
Test Conditions
Min.
Typ.
Max.
11
Unit
ns
13
ns
18
ns
Parameter
Test Conditions
Min.
Typ.
Source-drain Current
ISDM (2)
VSD (1)
Forward On Voltage
trr
Qrr
IRRM
Max.
Unit
1.6
500
ns
2.1
8.5
Thermal Impedance
3/9
STD2NC60
Output Characteristics
Tranfer Characteristics
Tranconductance
Capacitance Variations
4/9
STD2NC60
Normalized Gate Thereshold Voltage vs Temp.
5/9
STD2NC60
Fig. 1: Unclamped Inductive Load Test Circuit
6/9
STD2NC60
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
2.4
0.086
MAX.
0.094
0.043
2.2
A1
0.9
1.1
0.035
A3
0.7
1.3
0.027
0.051
0.64
0.9
0.025
0.031
B2
5.2
5.4
0.204
0.212
B3
0.85
B5
0.033
0.3
0.012
B6
0.95
0.037
0.45
0.6
0.017
0.023
C2
0.48
0.6
0.019
0.023
6.2
0.236
0.244
6.4
6.6
0.252
0.260
4.4
4.6
0.173
0.181
15.9
16.3
0.626
0.641
9.4
0.354
0.370
L1
0.8
1.2
0.031
L2
0.8
0.047
0.031
0.039
A1
C2
A3
B3
=
=
B2
B5
B6
L2
L1
0068771-E
7/9
STD2NC60
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
2.20
2.40
0.087
0.094
A1
0.90
1.10
0.035
0.043
A2
0.03
0.23
0.001
0.009
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.213
0.45
0.60
0.018
0.024
C2
0.48
0.60
0.019
0.024
6.00
6.20
0.236
0.244
6.40
6.60
0.252
0.260
4.40
4.60
0.173
0.181
9.35
10.10
0.368
0.398
L2
L4
V2
0.8
0.60
0
0.031
1.00
8
0.024
0
0.039
0o
P032P_B
8/9
STD2NC60
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
2000 STMicroelectronics Printed in Italy All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
9/9