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DEIS, University of Bologna - Viale Pepoli 3/2 40123 Bologna BO Italy, Email: ilan.melczarsky@unibo.it
(2)
MEC srl Via San Nicol di Villola 1 40127 Bologna BO Italy, Email: julio.lonac@mec-mmic.com
(3)
IEIIT CNR Viale Risorgimento, 2 40136 Bologna BO Italy, Email: r.paganelli@bo.ieiit.cnr.it
ABSTRACT
The paper presents the design and characterization of an
X-band monolithic High Power Amplifier chip
developed using HB20PX InGaP/GaAs Heterojunction
Bipolar Transistor (HBT) process from UMS. Unlike
other circuits in the literature, this chip has been
especially designed to be compatible with space
component derating requirements as regards maximum
voltages and currents, as well as maximum junction
temperature for active devices. Nonetheless, the
designed chip achieved 39.5 dBm of output power and
more than 40% of Power Added Efficiency at 9.6 GHz
with a collector bias voltage of just 7.8 V and a collector
current density of 17 kA/cm2. These performances are to
the best of the authors knowledge state-of-the-art for
such low bias voltage and very close to those of
commercial or general-purpose circuits, thus making
this circuit a good candidate for next-generation spaceborne applications.
1.
INTRODUCTION
HBT TECHNOLOGY
3.
4.
DEVICE CHARACTERIZATION
The design goals for this HPA circuit were 39.5 dBm of
output power and 40% of Power Added Efficiency
specified at 3 dB of gain compression over a (40C,+50C) baseplate temperature range. Although
there exist in the literature circuits with these
performances [1-14], the aim of this work was to design
an MMIC following space component directives with
regards to maximum voltage, maximum current density
and maximum junction temperature. Thus a derating
factor of 25% was applied to the maximum rated bias
voltage and collector current density, and a safety
margin of 50C was maintained with respect to the
maximum junction temperature specified by the
manufacturer. Accordingly, the maximum available
collector bias voltage, DC collector current density, and
junction temperature were, respectively: 7.5 V, 19.2
kA/cm2, and 125 C. The specified bandwidth was 500
MHz around a central frequency of 9.6 GHz.
Figure 2 shows a photograph and a block diagram of the
HPA chip which measures 5.7 x 4.5 mm2. It consists of
two power stages, the first one having 4 conventional
HBT cells working in class-A, and the final or power
stage having 8 BiCell transistors in an inverse Class-F
operation. The circuit was designed at a schematic level
using Agilent ADS linear (i.e. S-parameters simulation)
and nonlinear simulation capabilities (i.e. HarmonicBalance analysis). The quiescent bias point, as well as
the optimum load impedance for each stage were chosen
based on measured and simulated load-pull contours so
as to obtain the best power and efficiency performances.
Vcc1
Vcc2
Vbb2
(3)
RF
IN
(1)
Vbb1
(2)
Vcc1
RF
OUT
(3)
(4)
(5)
Vcc2
Vbb2
9.0 GHz
9.1 GHz
9.2 GHz
9.3 GHz
9.4 GHz
9.5 GHz
9.6 GHz
9.7 GHz
9.8 GHz
9.9 GHz
10.0 GHz
10.1 GHz
10.2 GHz
Ic [A]
0.8
0.6
0.4
0.2
0.0
0
10
12
14
16
18
Vce [V]
20
15
-5
10
-10
-15
-20
S21
S11
S22
-5
-10
7
|S21| [dB]
CIRCUIT MEASUREMENTS
-25
-30
10
11
12
Freq [GHz]
Gain[dB]
5.
15
f=9.35GHz
14
f=9.65GHz
13
f=9.85GHz
12
11
10
5
10
15
20
25
30
Pavs[dBm]
Pout[dBm]
40
38
36
34
32
30
28
26
24
22
20
f=9.35GHz
f=9.65GHz
f=9.85GHz
10
15
20
25
30
Pavs[dBm]
40
35
f=9.35GHz
30
25
f=9.85GHz
f=9.65GHz
10
5
0
5
10
15
20
25
30
Pavs[dBm]
Ic[A]
2.8
2.6
2.4
f=9.35GHz
f=9.65GHz
2.2
2
1.8
1.6
f=9.85GHz
2.80
2.70
2.60
Gain[dB]
Ic[A]
9.00
9.20
9.40
2.50
9.60
9.80
2.40
10.00
freq[GHz]
Pout[dBm],PAE[%]
13.70
13.60
13.50
13.40
13.30
13.20
13.10
13.00
12.90
12.80
12.70
8.80
TotalIc[A]
20
15
Gain[dB]
PAE[%]
45
41.00
Pout[dBm]
PAE[%]
40.00
39.00
38.00
37.00
1.4
1.2
1
36.00
8.80
9.00
9.20
9.40
9.60
9.80
10.00
freq[GHz]
5
10
15
20
25
30
Pavs[dBm]
JunctionTemperature[C]
130.00
125.00
120.00
115.00
110.00
105.00
100.00
95.00
90.00
85.00
80.00
8.80
8.
Powers ta ge
DriverStage
9.00
9.20
9.40
9.60
9.80
10.00
freq[GHz]
Value
8.85 9.95
39.30.3
38.52.5
13.20.4
14.90.9
> 10.6
2.7
7.5 (1st stage)
7.8 (2nd stage)
<127
Units
GHz
dBm
%
dB
dB
dB
A
V
C
CONCLUSIONS
REFERENCES
ACKNOWLEDGEMENTS