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Conditions
Values
Unit
IGBT
VCES
IC
Tj = 25 C
Tj = 150 C
1200
Tc = 25 C
760
Tc = 80 C
530
600
ICnom
ICRM
SEMITRANS 4
VGES
tpsc
Tj
ICRM = 2xICnom
VCC = 600 V
VGE 15 V
VCES 1200 V
1200
-20 ... 20
10
Tc = 25 C
720
Tc = 80 C
500
600
Tj = 125 C
Inverse diode
SKM800GA125D
IF
Tj = 150 C
IFnom
Features
Homogeneous Si
NPT-IGBT
VCE(sat) with positive temperature
coefficient
High short circuit capability, self limiting
to 6 x IC
Typical Applications*
Resonant inverters up to 100 kHz
Inductive heating
Electronic welders at fsw > 20 kHz
IFRM
IFRM = 2xIFnom
1200
IFSM
5760
Tj
Module
It(RMS)
Visol
500
4000
Characteristics
Symbol
IGBT
VCE(sat)
Remarks
IDC 500 A limited by terminals
Take care of over-voltage caused by
stray inductances
Tterminal = 80 C
Tstg
VCE0
Conditions
IC = 600 A
VGE = 15 V
chiplevel
chiplevel
min.
typ.
max.
Unit
Tj = 25 C
3.20
3.70
Tj = 125 C
4.00
4.80
Tj = 25 C
1.5
1.75
Tj = 125 C
1.7
1.95
Tj = 25 C
2.83
3.25
3.83
4.75
5.5
6.5
0.6
mA
rCE
VGE = 15 V
chiplevel
VGE(th)
VGE=VCE, IC = 24 mA
ICES
VGE = 0 V
VCE = 1200 V
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
QG
VGE = - 8 V...+ 20 V
RGint
Tj = 25 C
VCC = 600 V
IC = 600 A
VGE = +/-15 V
RG on = 0.5
RG off = 0.5
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
Tj = 125 C
4.5
Tj = 25 C
mA
f = 1 MHz
37.2
nF
f = 1 MHz
5.6
nF
f = 1 MHz
2.80
nF
4200
nC
0.5
Tj = 125 C
480
ns
Tj = 125 C
116
ns
Tj = 125 C
88
mJ
Tj = 125 C
666
ns
Tj = 125 C
58
ns
Tj = 125 C
48
mJ
per IGBT
0.03
K/W
GA
by SEMIKRON
Rev. 1 21.08.2014
SKM800GA125D
Characteristics
Symbol
Conditions
Inverse diode
VF = VEC IF = 600 A
VGE = 0 V
chiplevel
VF0
chiplevel
rF
SEMITRANS 4
IRRM
Qrr
Err
Rth(j-c)
SKM800GA125D
Homogeneous Si
NPT-IGBT
VCE(sat) with positive temperature
coefficient
High short circuit capability, self limiting
to 6 x IC
IF = 600 A
VGE = 15 V
VCC = 600 V
per diode
typ.
max.
Unit
Tj = 25 C
2.3
2.58
Tj = 125 C
1.87
2.38
Tj = 25 C
1.1
1.45
Tj = 125 C
0.85
1.2
Tj = 25 C
1.6
1.9
Tj = 125 C
1.7
Tj = 125 C
370
Tj = 125 C
83
Tj = 125 C
28
mJ
0.07
K/W
Module
LCE
RCC'+EE'
Features
chiplevel
min.
15
terminal-chip
Rth(c-s)
per module
Ms
to heat sink M6
Mt
to terminals
20
nH
TC = 25 C
0.18
TC = 125 C
0.22
m
0.038
K/W
0.02
Nm
M6
2.5
Nm
M4
1.1
Nm
330
Typical Applications*
Resonant inverters up to 100 kHz
Inductive heating
Electronic welders at fsw > 20 kHz
Remarks
IDC 500 A limited by terminals
Take care of over-voltage caused by
stray inductances
GA
2
Rev. 1 21.08.2014
by SEMIKRON
SKM800GA125D
by SEMIKRON
Rev. 1 21.08.2014
SKM800GA125D
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE'
Rev. 1 21.08.2014
by SEMIKRON
SKM800GA125D
SEMITRANS 4
GA
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
by SEMIKRON
Rev. 1 21.08.2014