Академический Документы
Профессиональный Документы
Культура Документы
APT37M100L
1000V, 37A, 0.33 Max
N-Channel MOSFET
Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET.
A proprietary planar stripe design yields excellent reliability and manufacturability. Low
switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
help control slew rates during switching, resulting in low EMI and reliable paralleling,
even when switching at very high frequency. Reliability in flyback, boost, forward, and
other circuits is enhanced by the high avalanche energy capability.
T-Ma x TM
TO-264
APT37M100B2
APT37M100L
D
G
S
TYPICAL APPLICATIONS
FEATURES
Fast switching with low EMI/RFI
Low RDS(on)
Buck converter
Flyback
RoHS compliant
Inverters
Parameter
Unit
Ratings
37
23
IDM
VGS
Gate-Source Voltage
30
EAS
2165
mJ
IAR
18
140
Max
Unit
W
PD
1135
RJC
0.11
RCS
TJ,TSTG
TL
WT
Package Weight
Torque
0.11
-55
150
300
C/W
0.22
oz
6.2
g
10
inlbf
1.1
Nm
Rev C 7-2011
Min
Characteristic
050-8099
Symbol
Static Characteristics
Symbol
Parameter
VBR(DSS)
VBR(DSS)/TJ
Drain-Source On Resistance
VGS(th)
VGS(th)/TJ
IGSS
Dynamic Characteristics
VDS = 1000V
VGS = 0V
Forward Transconductance
Ciss
Input Capacitance
Crss
Coss
Output Capacitance
Typ
Max
1.15
0.29
4
-10
0.33
5
TJ = 25C
100
500
100
TJ = 125C
VGS = 30V
Unit
V
V/C
V
mV/C
A
nA
Parameter
gfs
Symbol
IDSS
Min
1000
RDS(on)
Test Conditions
VGS = 0V, ID = 250A
APT37M100B2_L
Min
Test Conditions
VDS = 50V, ID = 18A
Co(er)
Max
39
9835
130
825
Co(cr)
Typ
Unit
S
pF
335
VGS = 0V, VDS = 0V to 667V
Qg
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
td(on)
tr
td(off)
tf
170
305
55
145
44
40
150
38
nC
ns
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 1
Test Conditions
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
trr
ISD = 18A 3
Qrr
Typ
Max
Unit
37
A
VSD
dv/dt
Min
D
140
1
1165
33
V
ns
C
10
V/ns
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at TJ = 25C, L = 13.36mH, RG = 2.2, IAS = 18A.
3 Pulse test: Pulse Width < 380s, duty cycle < 2%.
050-8099
Rev C 7-2011
4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of
VDS less than V(BR)DSS, use this equation: Co(er) = -2.85E-7/VDS^2 + 5.04E-8/VDS + 9.75E-11.
6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
APT37M100B2_L
120
GS
40
= 10V
T = 125C
J
35
V
TJ = -55C
80
60
TJ = 25C
40
20
TJ = 125C
30
25
20
5V
15
10
5
TJ = 150C
0
5
10
15
20
25
30
VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
4.5V
140
NORMALIZED TO
VGS = 10V @ 18A
2.5
120
ID, DRAIN CURRENT (A)
2.0
1.5
1.0
0.5
100
80
TJ = -55C
60
TJ = 25C
40
TJ = 125C
20
0
0
-55 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 3, RDS(ON) vs Junction Temperature
1
2
3
4
5
6
7
8
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 4, Transfer Characteristics
20,000
50
Ciss
40
30
TJ = 125C
20
1000
Coss
100
10
Crss
16
VGS, GATE-TO-SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
TJ = -55C
TJ = 25C
8
12
16
ID, DRAIN CURRENT (A)
Figure 5, Gain vs Drain Current
200
400
600
800
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 6, Capacitance vs Drain-to-Source Voltage
12
VDS = 200V
10
VDS = 500V
8
6
VDS = 800V
4
2
0
140
ID = 18A
14
10
20
gfs, TRANSCONDUCTANCE
10,000
120
100
80
TJ = 25C
60
TJ = 150C
40
20
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage
Rev C 7-2011
3.0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
050-8099
= 6, 7, 8 & 9V
GS
100
APT37M100B2_L
200
200
100
100
IDM
10
IDM
13s
100s
1ms
10ms
Rds(on)
100ms
0.1
TJ = 125C
TC = 75C
10
13s
100s
TJ = 150C
TC = 25C
DC line
0.1
10
100
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, Forward Safe Operating Area
1ms
10ms
Rds(on)
10
100
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 10, Maximum Forward Safe Operating Area
0.10
D = 0.9
0.08
0.7
0.06
0.5
0.04
t1
0.3
t2
t1 = Pulse Duration
SINGLE PULSE
0.02
0
Note:
P DM
0.12
0.1
0.05
10
-5
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (seconds)
Figure 12. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
1.0
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
15.49 (.610)
16.26 (.640)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
Drai n
Drai n
20.80 (.819)
21.46 (.845)
050-8099
Rev C 7-2011
0.40 (.016)
1.016(.040)
25.48 (1.003)
26.49 (1.043)
2.87 (.113)
3.12 (.123)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
19.81 (.780)
21.39 (.842)
Gate
Drain
Source
2.21 (.087)
2.59 (.102)
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters (Inches)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
2.29 (.090)
2.69 (.106)
Gate
Drai n
Source