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APT37M100B2

APT37M100L
1000V, 37A, 0.33 Max

N-Channel MOSFET
Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET.
A proprietary planar stripe design yields excellent reliability and manufacturability. Low
switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
help control slew rates during switching, resulting in low EMI and reliable paralleling,
even when switching at very high frequency. Reliability in flyback, boost, forward, and
other circuits is enhanced by the high avalanche energy capability.

T-Ma x TM

TO-264

APT37M100B2

APT37M100L
D

Single die MOSFET

G
S

TYPICAL APPLICATIONS

FEATURES
Fast switching with low EMI/RFI

PFC and other boost converter

Low RDS(on)

Buck converter

Ultra low Crss for improved noise immunity

Two switch forward (asymmetrical bridge)

Low gate charge

Single switch forward

Avalanche energy rated

Flyback

RoHS compliant

Inverters

Absolute Maximum Ratings


Symbol
ID

Parameter

Unit

Ratings

Continuous Drain Current @ TC = 25C

37

Continuous Drain Current @ TC = 100C

23

IDM

Pulsed Drain Current

VGS

Gate-Source Voltage

30

EAS

Single Pulse Avalanche Energy 2

2165

mJ

IAR

Avalanche Current, Repetitive or Non-Repetitive

18

140

Thermal and Mechanical Characteristics


Typ

Max

Unit
W

PD

Total Power Dissipation @ TC = 25C

1135

RJC

Junction to Case Thermal Resistance

0.11

RCS

Case to Sink Thermal Resistance, Flat, Greased Surface

TJ,TSTG

Operating and Storage Junction Temperature Range

TL

Soldering Temperature for 10 Seconds (1.6mm from case)

WT

Package Weight

Torque

Mounting Torque ( TO-264 Package), 4-40 or M3 screw

Microsemi Website - http://www.microsemi.com

0.11
-55

150
300

C/W

0.22

oz

6.2

g
10

inlbf

1.1

Nm

Rev C 7-2011

Min

Characteristic

050-8099

Symbol

Static Characteristics

TJ = 25C unless otherwise specified

Symbol

Parameter

VBR(DSS)

Drain-Source Breakdown Voltage

VBR(DSS)/TJ

Drain-Source On Resistance

VGS(th)

Gate-Source Threshold Voltage

VGS(th)/TJ

IGSS

Gate-Source Leakage Current

Dynamic Characteristics

VDS = 1000V
VGS = 0V

Forward Transconductance

Ciss

Input Capacitance

Crss

Reverse Transfer Capacitance

Coss

Output Capacitance

Typ

Max

1.15
0.29
4
-10

0.33
5

TJ = 25C

100
500
100

TJ = 125C

VGS = 30V

Unit
V
V/C

V
mV/C
A
nA

TJ = 25C unless otherwise specified

Parameter

gfs

VGS = VDS, ID = 2.5mA

Threshold Voltage Temperature Coefficient


Zero Gate Voltage Drain Current

Symbol

VGS = 10V, ID = 18A

IDSS

Min
1000

Reference to 25C, ID = 250A

Breakdown Voltage Temperature Coefficient

RDS(on)

Test Conditions
VGS = 0V, ID = 250A

APT37M100B2_L

Min

Test Conditions
VDS = 50V, ID = 18A

Effective Output Capacitance, Charge Related

Co(er)

Effective Output Capacitance, Energy Related

Max

39
9835
130
825

VGS = 0V, VDS = 25V


f = 1MHz

Co(cr)

Typ

Unit
S

pF

335
VGS = 0V, VDS = 0V to 667V

Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

td(on)

Turn-On Delay Time

tr
td(off)
tf

170
305
55
145
44
40
150
38

VGS = 0 to 10V, ID = 18A,


VDS = 500V
Resistive Switching
VDD = 667V, ID = 18A

Current Rise Time

RG = 2.2 6 , VGG = 15V

Turn-Off Delay Time


Current Fall Time

nC

ns

Source-Drain Diode Characteristics


Symbol
IS
ISM

Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 1

Test Conditions
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)

Diode Forward Voltage

ISD = 18A, TJ = 25C, VGS = 0V

trr

Reverse Recovery Time

ISD = 18A 3

Qrr

Reverse Recovery Charge


Peak Recovery dv/dt

Typ

Max

Unit

37
A

VSD

dv/dt

Min
D

140

diSD/dt = 100A/s, TJ = 25C


ISD 18A, di/dt 1000A/s, VDD = 100V,
TJ = 125C

1
1165
33

V
ns
C

10

V/ns

1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at TJ = 25C, L = 13.36mH, RG = 2.2, IAS = 18A.
3 Pulse test: Pulse Width < 380s, duty cycle < 2%.

050-8099

Rev C 7-2011

4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of
VDS less than V(BR)DSS, use this equation: Co(er) = -2.85E-7/VDS^2 + 5.04E-8/VDS + 9.75E-11.
6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.

APT37M100B2_L

120

GS

40

= 10V

T = 125C
J

35
V

TJ = -55C

80
60
TJ = 25C

40
20

TJ = 125C

30
25
20
5V

15
10
5

TJ = 150C

0
5
10
15
20
25
30
VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V)

4.5V

Figure 2, Output Characteristics

140

NORMALIZED TO
VGS = 10V @ 18A

2.5

VDS> ID(ON) x RDS(ON) MAX.


250SEC. PULSE TEST
@ <0.5 % DUTY CYCLE

120
ID, DRAIN CURRENT (A)

2.0
1.5
1.0
0.5

100
80
TJ = -55C

60
TJ = 25C

40
TJ = 125C

20
0

0
-55 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 3, RDS(ON) vs Junction Temperature

1
2
3
4
5
6
7
8
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 4, Transfer Characteristics

20,000

50

Ciss

40

30

TJ = 125C

20

1000

Coss
100

10

Crss

16
VGS, GATE-TO-SOURCE VOLTAGE (V)

C, CAPACITANCE (pF)

TJ = -55C
TJ = 25C

8
12
16
ID, DRAIN CURRENT (A)
Figure 5, Gain vs Drain Current

200
400
600
800
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 6, Capacitance vs Drain-to-Source Voltage

12
VDS = 200V

10

VDS = 500V

8
6

VDS = 800V

4
2
0

140

ID = 18A

14

10

20

50 100 150 200 250 300 350 400


Qg, TOTAL GATE CHARGE (nC)
Figure 7, Gate Charge vs Gate-to-Source Voltage

ISD, REVERSE DRAIN CURRENT (A)

gfs, TRANSCONDUCTANCE

10,000

120
100
80
TJ = 25C

60
TJ = 150C

40
20
0

0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage

Rev C 7-2011

RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE

Figure 1, Output Characteristics

3.0

5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (V)

050-8099

= 6, 7, 8 & 9V

GS

ID, DRIAN CURRENT (A)

ID, DRAIN CURRENT (A)

100

APT37M100B2_L
200

200

100

100

IDM

10

ID, DRAIN CURRENT (A)

ID, DRAIN CURRENT (A)

IDM

13s
100s
1ms

10ms

Rds(on)

100ms

0.1

TJ = 125C
TC = 75C

10
13s
100s
TJ = 150C
TC = 25C

Scaling for Different Case & Junction


100ms
Temperatures:
DC line
ID = ID(T = 25C)*(TJ - TC)/125

DC line

0.1

10
100
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, Forward Safe Operating Area

1ms
10ms

Rds(on)

10
100
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 10, Maximum Forward Safe Operating Area

0.10

D = 0.9

0.08

0.7

0.06

0.5

0.04

t1

0.3

t2

t1 = Pulse Duration

SINGLE PULSE

0.02
0

Note:

P DM

ZJC, THERMAL IMPEDANCE (C/W)

0.12

Duty Factor D = 1 /t2


Peak T J = P DM x Z JC + T C

0.1
0.05
10

-5

10-4

10-3
10-2
10-1
RECTANGULAR PULSE DURATION (seconds)
Figure 12. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration

T-MAX (B2) Package Outline

1.0

TO-264 (L) Package Outline


e3 100% Sn Plated

4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)

4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)

15.49 (.610)
16.26 (.640)

19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)

5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)

Drai n

Drai n

20.80 (.819)
21.46 (.845)

4.50 (.177) Max.

050-8099

Rev C 7-2011

0.40 (.016)
1.016(.040)

25.48 (1.003)
26.49 (1.043)

2.87 (.113)
3.12 (.123)
2.29 (.090)
2.69 (.106)

1.65 (.065)
2.13 (.084)

19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)

19.81 (.780)
21.39 (.842)

Gate
Drain
Source

2.21 (.087)
2.59 (.102)

5.45 (.215) BSC


2-Plcs.

These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters (Inches)

0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)

0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.

Dimensions in Millimeters (Inches)

2.29 (.090)
2.69 (.106)

Gate
Drai n
Source

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