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NITRIDE
1- CHANNEL MODEL
Tarik Menkad 1, student member, IEEE, Dimiter Alexandrov 1,2, and Kenneth Scott A. Butcher 1,2
1
Semiconductor Laboratory, Department of Electrical Engineering, Lakehead University, 955 Oliver Rd, Thunder Bay P7B 5E1, Ontario,
Canada.
2
Meaglow Ltd, 1294 Balmoral St, Suite 150, Thunder Bay P7B 5Z5, Ontario, Canada
2. MODEL
ABSTRACT
A new analytical model for a two terminal metal-oxideGallium Nitride/Indium Gallium Nitride heterojunction structure is
presented. This model characterizes the space charge layer created
by electron tunneling in the structures channel which is made of
intrinsic Gallium Nitride. A one dimensional (1-D) analysis is
adopted, and a set of hypotheses is stated to frame the present
work.
2.1. Nomenclature
,
,
.
1. INTRODUCTION
Excitons found in InxGa1-xN alloy are used as a basis for the
design of a high frequency field effect transistor [1]. This transistor
uses excitons as a quantum source of free electrons for its channel
made of intrinsic Gallium Nitride. Electrons, under the influence of
an external electric field, move in an intrinsic material and
experience reduced scattering. The high mobility in the channel
allows low-noise and high-speed performance. The metal- oxidesemiconductor on In0.5Ga0.5N capacitor, which forms the core of
this high-frequency field-effect transistor, is the subject of the
present work. Quasi-static C-V characteristic are obtained. For this
purpose, a set of hypotheses are stated in order to set the scope and
the domain for the validity of this model.
Channel conductivity is modulated by the value of the free
electric charge present in the intrinsic GaN material. This charge is
due to electrons of excitons origin, which tunnel through the
i-GaN/p-In0.5Ga0.5N heterojunction. The determination of the
charge density distribution, the electric field through the channel
thickness, and the potential drop across the channel are essential to
relate the electric charge present on the gate to the corresponding
applied gate voltage. For this purpose, a channel model is
presented. The reader will realize that such a model is a standalone
entity and can be introduced separately from the device model, we
chose to do it the other way to demonstrate the need for such a
channel model in the analysis of the MOS capacitor on In0.5Ga0.5N.
,
,
.
2012 25th IEEE Canadian Conference on Electrical and Computer Engineering (CCECE)
978-1-4673-1433-6/12/$31.00 2012 IEEE
7) Both the oxide and the GaN have the same work function. No
built in potential exists at the oxide/GaN interface
8) Charge neutrality condition is assumed.
9) The existence of quasi-neutral regions in p-type and n-type
In0.5Ga0.5N layers is considered.
10) The i-GaN/p-In0.5Ga0.5N heterojunction is approximated by an
abrupt junction.
11) Complete ionization occurs in doped semiconductors. Device
is operating at room temperature.
12) The gate voltage varies slowly enough, so we can always
consider a zero-valued gate current.
13) The GaN material is considered to be depleted from free
charge carriers.
exp
(1)
.
(2)
(3)
(4)
(5)
i-GaN layer
p-In0.5Ga0.5N
n-In0.5Ga0.5N
(8)
"
Where
2
. ,
0 ,
exp
Gate
Oxide
1
(7)
exp
2.3. Analysis
Figure 1 illustrates a cross-section of the metal-oxidesemiconductor structure including the referenced potential drops
across regions of interest. The gate voltage breaks down to four
,
,
, and
.
potential drops
is given
VGg
(6)
to potential drops, (1-D) Poisson
To relate the electric field
equation is solved for the space-charge region in p-type In0.5Ga0.5N
0
0
, where
exp
(9)
(10),
x-axis
thGaN
(case1)
and
arctan
arctan
arctan
(11)
0,1
(case2)
2
2
The quantity
0,
1
2
0,
arctan
0,
arctan
The free electron concentration, the potential drop, and the electric
field
are
presented
as
functions
of
four
. The average concentration of free
variables ,
,
,
electrons is used to compute the free electron concentration initial
value. The initial value
is obtained by solving, for an
appropriate choice of the unknown, the following equation
2
1
0,
Where
1
and
1
0,
as case 2.
(12)
by its expression,
Substituting the free electron concentration
got from first equation in set (10) or set (11) according to the case
considered, in (12) we obtain;
1
(case1)
(13)
(case2)
(14)
is a dimensionless
and
for case1,
1,
0,
and
0,
0,1
arctan
0, ,
for case2,
Start
(case1)
(case2)
Computation of
parameters a and b
0,
(Case1)
Yes
(15)
Case 1
Yes
(Case2)
0, arctan
No
No
a(b+1)=2
(16)
Cannot provide a solution
for given (F0, nch,ave, thGaN)
0,
a>=2
Yes
No
a(b+1)>2
Case 1
Case 2
Case
1(2)
End
(Case 1)
Condition2:
(Case 2)
Constants ,
are expressed in terms of the electric field initial
value, the average value of free electron concentration, and the
Gallium Nitride layer thickness. The product
1 is directly
obtained from the input
,
,
, and indicates which case
(1 or 2) is taken.
Suppose that Equation (12), put under form (15) or (16), has a
solution , then the initial value of free electron concentration
is computed using reciprocals of bijections introduced earlier to
is given as,
justify the variable change. Initial value
1
(Case 1)
(17)
(Case 2)
(18)
Solve equation
and compute value n0
Compute parameters
d, d2, and Ld
Yes
No
End
End
3. DISCUSSION
For a given GaN layer thickness, here we considered
thGaN=50nm as in [1]. Constants a and b depend on the electric
field initial value F0, and on the free electron concentration average
value
. To emphasize the difference between case 1 and case 2,
consider the following practical situations. First, the GaN layer is
heavily charged, and under the influence of an electric field whose
initial value is low. Second, the GaN layer is lightly charged, and
under the influence of an electric field whose initial value is high.
The first situation satisfies condition 2 and thus falls under case2,
while the second satisfies condition 1 and thus falls under case1.
Condition1 is always satisfied if constant
2. This corresponds
to situations where
1.04 10 V/cm at room temperature for
a GaN layer thickness of 50nm, regardless of the charge density
value.
F in V/cm
0
0.2
0.4 0.6
0.8
1
Electric field for nch ave=1e17cm 3, F0=1e-2,1e-1V/cm, and thGaN=50nm
5
10
10
10
-5
v in mV
0
0.2
0.4 0.6
0.8
1
Voltage diff. for nch ave=1e17cm 3, F0=1e-2,1e-1V/cm, and thGaN=50nm
100
50
0
0
0.2
0.4
0.6
Normalized abscissa
0.8
F in V/cm
n in cm-3
Free elec. conc. n for nch ave=1e18cm 3, F0=1e3,1e4 V/cm, and thGaN=50nm
20
10
18
10
16
10
0
0.2
0.4
0.6
0.8
1
Electric field F for nch ave=1e18cm-3 and F0=1e3,1e4V/cm, and thgan=50nm
6
10
4
10
F0=1e3 V/cm
F0=1e4 V/cm
10
v in mV
0
0.2
0.4
0.6
0.8
1
Voltage diff. v for nch ave=1e18cm-3,F0=1e3,1e4V/cm, and thGan=50nm
400
200
0
0
0.2
0.4
0.6
Normalized abscissa
0.8
n in cm-3
10
20
10
0
0
0.2
0.4
0.6
0.8
1
Voltage diff. for nch ave=1e18cm-3, F0=5e4,1e5V/cm, and thGaN=50nm
1000
v in mV
F in V/cm
10
0
0.2
0.4
0.6
0.8
1
Electric field F for nch ave=1e18cm-3, F0=5e4,1e5V/cm, and thGaN=50nm
6
x 10
2
F0=5e4
1
F0=1e5
500
0
0
0.2
0.4
0.6
Normalized abscissa
0.8
n in cm-3
10
16
F in V/cm
10
10
4
2
0
0.2
0.4
0.6
0.8
1
Voltage diff. for nch ave=1e14-15-16-17cm-3,F0=5e2V/cm,thGaN=50nm
100
v in mV
-100
0
0.2
0.4
0.6
Normalized abscissa
0.8
10
n in cm-3
10
Concentration n in cm-3
10
10
10
16
thGaN=25
thGaN=50
thGaN=75
thGaN=100
thGaN=125
15
15
10
10
17
(nch ave,F0)=(1e14,5e4)
(nch ave,F0)=(1e14,1e5)
(nch ave,F0)=(1e15,5e4)
(nch ave,F0)=(1e15,1e5)
(nch ave,F0)=(1e16,5e4)
(nch ave,F0)=(1e16,1e5)
10
0.2
0.4
0.6
Normalized abscissa
0.8
14
0.2
0.8
(a)
Elec.field for nch ave=1e16cm-3,F0=1e4V/cm,thGaN=25-50-75-100-125nm
4
x 10
3.5
3
(a)
thGaN=25
thGaN=50
thGaN=75
thGaN=100
thGaN=125
F in V/cm
2.5
0.4
0.6
Normalized abscissa
2
1.5
10
F in V/cm
(nch ave,F0)=(1e14,5e4)
(nch ave,F0)=(1e14,1e5)
(nch ave,F0)=(1e15,5e4)
(nch ave,F0)=(1e15,1e5)
(nch ave,F0)=(1e16,5e4)
(nch ave,F0)=(1e16,1e5)
9
8
7
0.5
0
0.2
0.4
0.6
Normalized abscissa
0.8
150
200
v in mV
0.8
(b)
thGaN=25
thGaN=50
thGaN=75
thGaN=100
thGaN=125
100
50
0
0
0.2
0.4
0.6
Normalized abscissa
0.8
(c)
Figure10: (a) Free electron concentration, (b) electric field, and (c)
=(1e16,1e4,25-50-75-100, ,
potential drop for inputs
125).
100
0
-100
0
0.4
0.6
Normalized abscissa
(b)
6
5
0
0.2
0.2
0.4
0.6
Normalized abscissa
0.8
(c)
Figure 9: (a) Free electron concentration, (b) electric field, and (c)
potential drop are plotted as functions of normalized abscissa for
= (1e14-15-16,5e4-1e5,50).
, ,
following inputs
the
following
(19)
Values F0=104V/cm, F1=1.48*104V/cm, F2=3.38*104V/cm,
th1=25nm, and th2=125nm satisfy proportionality (19).
As stated before, our primary motivation to develop a model for
the intrinsic GaN channel of the MOS capacitor is the need for two
to get a consistent
, , ,
more equations of unknowns
system of four equations. If the initial value of the electric field in
the GaN layer is taken at the i-GaN/p-In0.5Ga0.5N heterojunction,
the third equation is obtained by finding the potential drop across
the GaN channel. Its expression is that of the second equality in set
(10) for
1 if case1 applies, or that of the second equality in set
(11) for
1 if case 2 applies. The fourth equation is obtained
first, by finding the expression of the electric field final value and
second, by using the flux continuity property at the oxide/GaN
interface. The final value of the electric field in the GaN layer is
obtained from the third equality in set (10) for
1 if case1
applies, or from the third equality in set (11) for
1 if case 2
applies. The two equations are;
(20)
(case1)
arctan
arctan
(21)
(case2)
In fact, instead of having one system of four equations, two
systems were obtained. We will demonstrate in a coming paper (in
progress) that in the case where there is a presence of free charge
carriers in the GaN channel, only case 1 is taken and thus equations
(20) together with equations (1) and (6) form the needed four
equations system. The case corresponding to an initial zero-valued
electric field was not discussed in this work because no charge
tunneling occurs for this value [1], however this case will be
considered in the discussion of the flat band condition of the MOS
capacitor. Theoretical quasi-static C-V characteristics will be
compared against experimental measurements on a test MOS
capacitor which is being fabricated in the Semiconductor
Laboratory at Lakehead University.
4. CONCLUSION
A quasi-static analysis was performed for a MOS capacitor on
In0.5Ga0.5N. In order to obtain C-V characteristics, the need to
analyze charge density distribution, electric field and voltage drop
across the channel of this 2-terminal device was demonstrated.
A channel model was presented. Future work (paper in progress) is
defined.
5. REFERENCES
[1] Dimiter Alexandrov, "Design of High Frequency Field Effect
Transistor on InxGa1-xN," in 21st Biennial Symposiun on
Communications, Kingston ON, Canada, 2002.
[2] G. C. Dousmanis and R. C. Duncun Jr, "Calculation on the
Shape and Extent of Space Charge Regions in Semiconductor
Surfaces," Journal of Applied Physics, vol. 29, no. 12, pp.
1267-1269, December 1958.
[3] J. R. Hauser and M. A. littlejohn, "Approximations for
Accumulation and Inversion Space Charge Layers in
semiconductors," Solid State Electronics, vol. 11, no. 7, pp.
667-674, July 1968.