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Si2327DS

New Product

Vishay Siliconix

P-Channel 200-V (D-S) MOSFET


FEATURES

PRODUCT SUMMARY
VDS (V)
200
200

rDS(on) (W)

ID (A)

2.35 @ VGS = 10 V

0.49

2.45 @ VGS = 6.0 V

0.48

D TrenchFETr Power MOSFET


D Ultra Low On-Resistance
D Small Size

Qg (Typ)
80
8.0

APPLICATIONS
D Active Clamp Circuits in DC/DC Power
Supplies

TO-236
(SOT-23)
G

1
3

Ordering Information: Si2327DS -T1E3

Top View
Si2327DS (D7)*
*Marking Code

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


Parameter

Symbol

5 sec

Steady State

Drain-Source Voltage

VDS

200

Gate-Source Voltage

VGS

20

Continuous Drain Current (TJ = 150_C)a, b

TA = 25_C
TA = 70_C

Pulsed Drain Current

ID

Continuous Source Current (Diode Conduction)a, b

IS

Single-Pluse Avalanche Current

IAS

Single-Pulse Avalanche Energy


Maximum Power Dissipationa, b

L = 1.0
1 0 mH
TA = 25_C
TA = 70_C

Operating Junction and Storage Temperature Range

0.38

0.39

0.31
1.0

1.0

0.6
4.0

EAS
PD

0.49

IDM

Unit

0.8

mJ

1.25

0.75

0.8

0.48

TJ, Tstg

55 to 150

W
_C

THERMAL RESISTANCE RATINGS


Parameter
M i
Maximum
JJunction-to-Ambient
ti t A bi ta
Maximum Junction-to-Foot (Drain)

Symbol
t  5 sec
Steady State
Steady State

RthJA
RthJF

Typical

Maximum

75

100

120

166

40

50

Unit

_C/W
C/W

Notes
a. Surface Mounted on 1 x 1 FR4 Board.
b. Pulse width limited by maximum junction temperature.
Document Number: 73240
S-42448Rev. A, 10-Jan-05

www.vishay.com

Si2327DS
New Product

Vishay Siliconix

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)


Limits
Parameter

Symbol

Test Conditions

Min

V(BR)DSS

VGS = 0 V, ID = 250 mA

200

VGS(th)

VDS = VGS, ID = 250 mA

2.5

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = 20 V

Zero Gate Voltage Drain Current

IDSS

On-State Drain Currenta

ID(on)

Typ

Max

Unit

Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage

Drain Source On-Resistance


Drain-Source
On Resistancea
Forward Transconductancea
Diode Forward Voltage

4.5
100

VDS = 200 V, VGS = 0 V

VDS = 200 V, VGS = 0 V, TJ = 55_C

10

VDS  15 V, VGS = 10 V

rDS(on)
DS( )

1.0

V
nA
mA
A

VGS = 10 V, ID = 0.5 A

1.9

2.35

VGS = 6.0 V, ID = 0.5 A

1.96

2.45

gfs

VDS = 15 V, ID = 0.5 A

1.8

VSD

IS = 1.0 A, VGS = 0 V

0.85

1.2

8.0

12

W
S
V

Dynamicb
Total Gate Charge

Qg

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Gate Resistance

Rg

Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

VDS = 100
100 V,
V VGS = 10 V
ID  0.5 A
f = 1.0 MHz

1.3
2.5
8.0
340

VDS = 25 V, VGS = 0, f = 1 MHz

nC

W
510

25

pF
p

14

Switchingc
Turn-On Time

Turn Off Time


Turn-Off
Body Diode Reverse Recovery Charge

td(on)
tr
td(off)

VDD = 100 V, RL = 100 W


ID  1.0
1 0 A
A, VGEN = 10 V
Rg = 6 W

tf
Qrr

IF = 0.5 A, di/dt = 100 A/ms

12

11

17

16

25

11

17

140

200

ns

nC

Notes
a. Pulse test: PW 300 ms duty cycle 2%.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

www.vishay.com

Document Number: 73240


S-42448Rev. A, 10-Jan-05

Si2327DS
New Product

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)


Output Characteristics

Transfer Characteristics

1.0

1.0
VGS = 10 thru 5 V

0.8
I D Drain Current (A)

I D Drain Current (A)

0.8

0.6

0.4
4V

0.2

0.6

0.4
TC = 125_C
0.2
25_C

0.0

55_C

0.0
0

10

VDS Drain-to-Source Voltage (V)

VGS Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

3.2

Capacitance

500

400

2.4

C Capacitance (pF)

r DS(on) On-Resistance ( W )

2.8

VGS = 6 V
2.0
VGS = 10 V

1.6
1.2
0.8

Ciss
300

200

100

Crss

0.4

Coss

0.0
0.0

0
0.2

0.4

0.6

0.8

1.0

30

ID Drain Current (A)

90

120

150

VDS Drain-to-Source Voltage (V)

Gate Charge

On-Resistance vs. Junction Temperature


2.2

10
VDS = 10 V
ID = 0.5 A

1.9
rDS(on) On-Resiistance
(Normalized)

V GS Gate-to-Source Voltage (V)

60

VGS = 10 V
ID = 0.5 A

1.6
1.3
1.0
0.7

0
0

Qg Total Gate Charge (nC)


Document Number: 73240
S-42448Rev. A, 10-Jan-05

0.4
50

25

25

50

75

100

125

150

TJ Junction Temperature (_C)


www.vishay.com

Si2327DS
New Product

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)


Source-Drain Diode Forward Voltage
TJ = 150_C
r DS(on) On-Resistance ( W )

I S Source Current (A)

ID = 0.5 A

TJ = 25_C

0.1

4
3
2
1
0

0.01
0.0

On-Resistance vs. Gate-to-Source Voltage

0.2

0.4

0.6

1.0

0.8

1.2

1.4

VSD Source-to-Drain Voltage (V)

10

VGS Gate-to-Source Voltage (V)

Threshold Voltage

Single Pulse Power

1.0

12
ID = 250 mA

10

0.7

8
0.4

Power (W)

V GS(th) Variance (V)

0.1

6
4
TA = 25_C

0.2

0.5
50

25

25

50

75

100

125

150

0.01

0.1

TJ Temperature (_C)

10

100

600

Time (sec)

Safe Operating Area

10

IDM Limited

I D Drain Current (A)

10 ms
100 ms

*rDS(on) Limited

1 ms

0.1

10 ms
100 ms

0.01

TA = 25_C
Single Pulse

dc, 100 s

BVDSS Limited

0.001
0.1

10 s, 1 s

10

100

1000

VDS Drain-to-Source Voltage (V)


*VGS  minimum VGS at which rDS(on) is specified
www.vishay.com

Document Number: 73240


S-42448Rev. A, 10-Jan-05

Si2327DS
New Product

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)


Normalized Thermal Transient Impedance, Junction-to-Ambient

2
1
Normalized Effective Transient
Thermal Impedance

Duty Cycle = 0.5

0.1

0.2

Notes:

0.1

PDM

0.05

t1
t2
1. Duty Cycle, D =

t1
t2
2. Per Unit Base = RthJA = 120_C/W

0.02

3. TJM TA = PDMZthJA(t)
4. Surface Mounted

Single Pulse
0.01
104

103

102

101

10

100

600

Square Wave Pulse Duration (sec)

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?73240.
Document Number: 73240
S-42448Rev. A, 10-Jan-05

www.vishay.com

Legal Disclaimer Notice


Vishay

Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, Vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishays terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
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Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000


Revision: 18-Jul-08

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