Академический Документы
Профессиональный Документы
Культура Документы
Product specification
BU2506DF
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low
worst case dissipation.
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
VF
tf
VBE = 0 V
3.0
1.6
0.25
1500
700
5
8
45
5.0
2.0
0.5
V
V
A
A
W
V
A
V
s
PINNING - SOT199
PIN
Ths 25 C
IC = 3.0 A; IB = 0.79 A
IF = 3.0 A
ICsat = 3.0 A; IB(end) = 0.67 A
PIN CONFIGURATION
SYMBOL
DESCRIPTION
base
collector
emitter
case isolated
case
b
Rbe
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
VBE = 0 V
MIN.
MAX.
UNIT
-65
-
1500
700
5
8
3
5
100
4
45
150
150
V
V
A
A
A
A
mA
A
W
C
C
1 Turn-off current.
September 1997
Rev 1.400
Philips Semiconductors
Product specification
BU2506DF
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
Rth j-hs
Junction to heatsink
Rth j-hs
Junction to heatsink
Rth j-a
Junction to ambient
in free air
TYP.
MAX.
UNIT
3.7
K/W
2.8
K/W
32
K/W
TYP.
MAX.
UNIT
2500
PARAMETER
CONDITIONS
Visol
Cisol
MIN.
-
22
pF
MIN.
TYP.
MAX.
UNIT
1.0
2.0
mA
mA
95
7.5
700
13.5
55
-
208
-
mA
V
3.8
-
12
5.5
1.6
5.0
1.1
7.5
2.0
V
V
TYP.
MAX.
UNIT
47
pF
4.5
0.25
6.0
0.5
s
s
STATIC CHARACTERISTICS
Ths = 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
ICES
ICES
IEBO
BVEBO
Rbe
VCEOsust
VCEsat
VBEsat
hFE
hFE
VF
DYNAMIC CHARACTERISTICS
Ths = 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
Cc
Collector capacitance
IE = 0 A; VCB = 10 V; f = 1 MHz
ts
tf
September 1997
Rev 1.400
Philips Semiconductors
Product specification
ICsat
TRANSISTOR
IC
BU2506DF
100
h FE
DIODE
Tj = 25 C
Tj = 125 C
5V
IBend
IB
10
t
20us
26us
1V
64us
VCE
1
0.01
0.1
IC / A
10
ICsat
1.2
90 %
VBESAT / V
Tj = 25 C
Tj = 125 C
1.1
IC
1
0.9
10 %
tf
0.8
ts
IC/IB =
3
4
5
0.7
IB
IBend
0.6
t
0.5
0.4
- IBM
0.1
IC / A
10
+ 150 v nominal
adjust for ICsat
VCESAT / V
IC/IB =
5
4
3
0.9
0.8
0.7
Lc
0.6
0.5
LB
IBend
Tj = 25 C
Tj = 125 C
0.4
D.U.T.
0.3
Cfb
0.2
-VBB
0.1
Rbe
September 1997
0.1
IC / A
10
Rev 1.400
Philips Semiconductors
Product specification
BU2506DF
VBESAT / V
1.2
ts, tf / us
10
Tj = 25 C
Tj = 125 C
1.1
ts
9
8
7
0.9
IC =
4A
3A
2.5A
0.8
0.7
IC =
3
2
2.5A
3A
tf
0.6
IB / A
120
PD%
110
100
90
Tj = 25 C
Tj = 125 C
IC = 2.5A
3A
4A
10
IB / A
VCESAT / V
10
0.1
80
70
60
50
40
30
20
10
0
0
0.1
0.1
IB / A
10
20
40
60
80
Ths / C
100
120
140
Eoff / uJ
1000
IC = 3A
2.5A
100
10
0.1
IB / A
10
September 1997
Rev 1.400
Philips Semiconductors
Product specification
BU2506DF
IC / A
IC / A
100
100
= 0.01
= 0.01
ICM max
tp =
10
IC max
tp =
ICM max
10
10 us
10 us
IC max
II
II
Ptot max
Ptot max
100 us
100 us
1 ms
1 ms
I
0.1
0.1
10 ms
10 ms
DC
DC
0.01
0.01
10
100
1000
VCE / V
100
1000
VCE / V
September 1997
10
Rev 1.400
Philips Semiconductors
Product specification
BU2506DF
MECHANICAL DATA
Dimensions in mm
15.3 max
5.2 max
3.1
3.3
0.7
7.3
3.2
o
45
6.2
5.8
21.5
max
seating
plane
3.5 max
not tinned
3.5
15.7
min
1
2.1 max
5.45
3
1.2
1.0
0.7 max
0.4 M
2.0
5.45
Fig.14. SOT199; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
September 1997
Rev 1.400
Philips Semiconductors
Product specification
BU2506DF
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
September 1997
Rev 1.400