Data Sheet

Bulletin I27131 rev.
G 10/02
IRK.41, .56 SERIES

ADD-A-pakTM GEN V Power Modules
THYRISTOR/ DIODE and

THYRISTOR/ THYRISTOR
Features
Benefits
High Voltage
Industrial Standard Package
Thick Al metal die and double stick bonding
Thick copper baseplate
UL E78996 approved
3500VRMS isolating voltage
Up to 1600V
Full compatible TO-240AA
High Surge capability
Easy Mounting on heatsink
Al203 DBC insulator
Heatsink grounded
45 A
60 A
Mechanical Description
The Generation V of Add-A-pak module combine the
excellent thermal performance obtained by the usage of
Direct Bonded Copper substrate with superior
mechanical ruggedness, thanks to the insertion of a
solid Copper baseplate at the bottom side of the device.
The Cu baseplate allow an easier mounting on the
majority of heatsink with increased tolerance of surface
roughness and improve thermal spread.
The Generation V of AAP module is manufactured
without hard mold, eliminating in this way any possible
direct stress on the leads.
The electrical terminals are secured against axial pull-out:

they are fixed to the module housing via a click-stop
feature already tested and proved as reliable on other IR
modules.
Electrical Description
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
Major Ratings and Characteristics

Parameters
IRK.41
IRK.56
Units
45
60
IO(RMS) (*)
100
135
ITSM @ 50Hz
850
1310
IFSM @ 60Hz
890
1370
I 2t
@ 50Hz
3.61
8.50
KA 2s
@ 60Hz
3.30
7.82
KA 2s
36.1
85.0
KA 2s
IT(AV) or I F(AV)
@ 85C
I2t
VRRM range
400 to 1600
TSTG
- 40 to 125
TJ
- 40 to125
C
C
(*) As AC switch.
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IRK.41, .56 Series

Bulletin I27131 rev. G 10/02
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
Voltage
Code
-
IRK.41/ .56
VRRM , maximum
VRSM , maximum
VDRM , max. repetitive
repetitive
non-repetitive
peak off-state voltage,
peak reverse voltage peak reverse voltage
gate open circuit
V
V
V
04
400
500
400
06
600
700
600
08
800
900
800
10
1000
1100
1000
12
1200
1300
1200
14
1400
1500
1400
16
1600
1700
1600
IRRM
IDRM
125C
mA
15
On-state Conduction
Parameters
IT(AV)
IRK.41
IRK.56
Units
Conditions
Max. average on-state

current (Thyristors)
45
60
180o conduction, half sine wave,
Maximum average
45
60
TC = 85oC
IO(RMS) Max. continuous RMS

on-state current.
As AC switch
100
135
ITSM
Max. peak, one cycle
850
1310
t=10ms No voltage
or
non-repetitive on-state
890
1370
t=8.3ms reapplied
IFSM
or forward current
IF(AV)
forward current (Diodes)
I2t
I2t
Max. I2t for fusing
Max. I2t for fusing (1)
VT(TO) Max. value of threshold

voltage (2)
or
715
1100
t=10ms 100% VRRM
750
1150
t=8.3ms reapplied
940
1450
t=10ms TJ = 25oC,
I(RMS)
Sinusoidal
half wave,
Initial TJ = TJ max.
985
1520
t=8.3ms no voltage reapplied
3.61
8.56
t=10ms No voltage
3.30
7.82
t=8.3ms reapplied
2.56
6.05
t=10ms 100% VRRM
2.33
5.53
4.42
10.05
4.03
9.60
36.1
85.6
0.88
0.85
0.91
0.88
rt
Max. value of on-state
5.90
3.53
5.74
3.41
VTM
slope resistance (2)

Max. peak on-state or
VFM
forward voltage
1.81
1.54
di/dt
Max. non-repetitive rate

of rise of turned on
150
KA2s
Initial TJ = TJ max.
t=8.3ms reapplied
t=10ms TJ = 25oC,
t=8.3ms no voltage reapplied
KA2s
V
m
A/s
t=0.1 to 10ms, no voltage reapplied

Low level (3)
TJ = TJ max
High level (4)

Low level (3)
TJ = TJ max
High level (4)

ITM = x IT(AV)
TJ = 25C
IFM = x IF(AV)
TJ = 25oC, from 0.67 VDRM,

ITM = x IT(AV), I = 500mA,
g
tr < 0.5 s, tp > 6 s
current
IH
Max. holding current
200
IL
Max. latching current
400
(1) I2t for time tx = I2t x tx
I(RMS)
TJ = 25oC, anode supply = 6V,

mA
resistive load, gate open circuit

TJ = 25oC, anode supply = 6V,resistive load
(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2
(3) 16.7% x x IAV < I < x IAV
(4) I > x IAV
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IRK.41, .56 Series

Triggering
Parameters
PGM
IRK.41
Max. peak gate power
IRK.56
10
10
PG(AV) Max. average gate power
2.5
2.5
IGM
2.5
2.5
Max. peak gate current
-VGM Max. peak negative
TJ = - 40C
TJ = 25C
TJ = 125C
1.7
270
150
Max. gate current
TJ = - 40C
TJ = 25C
mA
80
Max. gate voltage

that will not trigger
IGD
2.5
required to trigger
VGD
4.0
Max. gate voltage

required to trigger
IGT
Conditions
10
gate voltage
VGT
Units
Max. gate current

that will not trigger
TJ = 125C
Anode supply = 6V
resistive load
Anode supply = 6V
resistive load
0.25
TJ = 125oC,
rated VDRM applied
mA
TJ = 125oC,
rated VDRM applied
Blocking
Parameters
IRK.41
IRRM
Max. peak reverse and
IDRM
off-state leakage current
IRK.56
Units
15
Conditions
TJ = 125 oC, gate open circuit
mA
at VRRM, VDRM
2500 (1 min)
VINS
50 Hz, circuit to base, all terminals
RMS isolation voltage
V
3500 (1 sec)
dv/dt Max. critical rate of rise

of off-state voltage (5)
shorted
500
TJ = 125oC, linear to 0.67 VDRM,

gate open circuit
V/s
(5) Available with dv/dt = 1000V/s, to complete code add S90 i.e. IRKT41/16AS90.
Thermal and Mechanical Specifications

Parameters
IRK.41
IRK.56
TJ
Junction operating
temperature range
- 40 to 125
Tstg
Storage temp. range
- 40 to 125
Units
Conditions
RthJC Max. internal thermal

resistance, junction
0.23
0.20
Per module, DC operation
to case
K/W
RthCS Typical thermal resistance

case to heatsink
T
Mounting surface flat, smooth and greased
0.1
Mounting torque 10%

to heatsink
busbar
wt
A mounting compound is recommended

and the torque should be rechecked after a
period of 3 hours to allow for the spread of
the compound
Nm
Approximate weight
110 (4)
Case style
gr (oz)
TO-240AA
JEDEC
R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Devices
IRK.41
IRK.56
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Sine half wave conduction

180o
0.11
0.09
120o
0.13
0.11
90o
0.17
0.13
60o
0.23
0.18
Rect. wave conduction

30o
0.34
0.27
180o
0.09
0.07
120o
0.14
0.11
90o
0.18
0.14
60o
0.23
0.19
30o
0.34
0.28
Units
C/W
IRK.41, .56 Series

Ordering Information Table

Device Code
IRK
56
16
S90
IRK.57 types
With no auxiliary cathode
Module type
Circuit configuration (See Circuit Configuration table below)
Current code * *
Voltage code (See Voltage Ratings table)
A : Gen V
dv/dt code:
* * Available with no auxiliary cathode.

To specify change:
41 to 42
56 to 57
e.g. : IRKT57/16A etc.
S90 = dv/dt 1000 V/s

No letter = dv/dt 500 Vs
Outline Table
Dimensions are in millimeters and [inches]
IRKT
IRKH
(1)
~
(1)
~
+
(2)
+
(2)
+
(2)
(3)
(3)
(3)
G1 K1
(4) (5)
IRKN
IRKL
(1)
~
K2 G2
(7) (6)
G1 K1
(4) (5)
(1)
(2)
(3)
K2 G2
(7) (6)
G1 K1
(4) (5)
NOTE: To order the Optional Hardware see Bulletin I27900

4
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IRK.41, .56 Series
IRK.41.. Series
R thJC (DC) = 0.46 K/W
120
110
Conduction Angle
100
30
60
90
90
180
10
20
30
40
50
IRK.41.. Series
120
110
Conduction Period
30
100
60
90
120
90
80
180
DC
0
20
40
60
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
70
180
120
90
60
30
60
50
RMS Limit
40
30
Conduction Angle
20
IRK.41.. Series
Per Junction
T J = 125C
10
0
130
10
20
30
40
50
Maximum Average On-state Power Loss (W)
80
120
Maximum Allowable Case Temperature (C)
130
80
100
DC
180
120
90
60
30
80
60
RMS Limit
40
Conduction Period
IRK.41.. Series
Per Junction
T J = 125C
20
20
40
60
80
Fig. 3 - On-state Power Loss Characteristics
800
At Any Rated Load Condition And With

Rated VRRM Applied Following Surge.
Initial TJ = 125C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
700
600
500
400
IRK.41.. Series
Per Junction
300
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
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Peak Half Sine Wave On-state Current (A)
900
Maximum Non Repetitive Surge Current

Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T J= 125C
No Voltage Reapplied
Rated V RRMReapplied
800
700
600
500
400
IRK.41.. Series
Per Junction
300
0.01
0.1
Pulse Train Duration (s)
IRK.41, .56 Series
140
R thSA
K/ W
0.3
5 K/W
0
100
80
Delta
K/W -
60
= 0 .1
40
80
K/
W
3 K/
IRK.41.. Series
Per Module
T J = 125C
20
K/W
Conduction Angle
60
2K
/W
0. 5
1.5
20
60
K/
80
40
40
W
K/
100
0. 7
180
120
90
60
30
120
Maximum Total On-state Power Loss (W)
20
100
120
140
Maximum Allowable Ambient Temperature (C)
Total RMS Output Current (A)
40
aR
20
el t
-D
K/
W
0. 7
K/
W
1K
/W
2 x IRK.41.. Series
Single Phase Bridge
Connected
T J = 125C
50
K/
W
K/
0.
5
150
100
.1
=0
200
180
(Sine)
180
(Rect)
W
K/
0.
250
R t hS
300
2
0.
Maximum Total Power Loss (W)
350
60
80
1.5
K /W
0
100
20
40
60
80
100
120
140
Total Output Current (A)

500
400
K/
W
350
150
3 x IRK.41.. Series
Three Phase Bridge
Connected
T J = 125C
100
50
0
20
40
60
80
100
120
0.7
K/
W
K/ W
1 K/
0
140
0. 5
200
K/
ta
el
0.
3
120
(Rect)
250
-D
300
W
K/
0.1
2
0.
SA
R th
450
20
40
60
80
100
120
140
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IRK.41, .56 Series
IRK.56.. Series
R
(DC) = 0.40 K/W
thJC
120
110
Conduction Angle
100
90
30
60
80
70
10
20
30
90
40
120
50
180
60
70
130
IRK.56.. Series
120
110
Conduction Period
100
90
90
80
30
70
20
60
RMS Limit
50
40
30
Conduction Angle
20
IRK.56.. Series
Per Junction
T J = 125C
10
0
10
20
30
40
50
60
120
100
100
80
60
RMS Limit
Conduction Period
40
IRK.56.. Series
Per Junction
T J = 125C
20
0
20
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
900
800
700
IRK.56.. Series
Per Junction
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
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60
80
100
At Any Rated Load Condition And With

Rated VRRM Applied Following Surge.
Initial TJ = 125C
1000
40
80
DC
180
120
90
60
30
500
60
DC
70
600
40
180
80
1100
120
180
120
90
60
30
1200
60

90
130
1400
Maximum Non Repetitive Surge Current

Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T J = 125C
No Voltage Reapplied
Rated V RRMReapplied
1200
1000
800
600
IRK.56.. Series
Per Junction
400
0.01
0.1
Pulse Train Duration (s)
IRK.41, .56 Series

S
R th
W
K/
=0
W
K/
.1
W
K/ K/W
5
0.
e lt
-D
0. 7
120
aR
K/
W
1K
/W
100
80
1.5
K/ W
2 K/
W
Conduction Angle
60
IRK.56.. Series
Per Module
T J = 125C
40
20
0
2
0.
140
0.
160
W
K/
180
120
90
60
30
180
3
0.
Maximum Total On-state Power Loss (W)
200
20
40
60
80
100
120
4 K/W
140
0
20
40
60
80
100
120
140
Total RMS Output Current (A)
400
R th
SA
0. 5
0.7
150
2 x IRK.56.. Series
Single Phase Bridge
Connected
T J = 125C
100
50
0
20
40
60
80
/W
200
a
elt
250
K/
W
0.
3K
-D
300
W
K/
180
(Sine)
180
(Rect)
1
0.
0.
2
350
450
100
120
K /W
K/ W
1 K/
W
2 K/W
0
140
20
40
60
80
100
120
140
SA
R th
500
3 x IRK.56.. Series
Three Phase Bridge
Connected
T J = 125C
100
0
20
40
60
0.5
K/ W
0.7
K/W
1 K/ W
80 100 120 140 160 180

0
K/
200
0.3
K/
W
ta
el
300
-D
120
(Rect)
W
K/
0.
400
1
0.
600
20
40
60
80
100
120
140
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IRK.41, .56 Series

1000
Instantaneous On-state Current (A)
Instantaneous On-state Current (A)
1000
100
T J= 25C
T J= 125C
10
IRK.41.. Series
Per Junction
1
100
TJ = 25C
TJ = 125C
10
IRK.56.. Series
Per Junction
1
0.5
Instantaneous On-state Voltage (V)
450
400
IRK.41.. Series
IRK.56.. Series
T J = 125 C
I TM = 200 A
100 A
350
50 A
300
250
20 A
200
10 A
150
100
10
20
30
40
50
60
70
80
90 100
2.5
3.5
4.5
110
I TM = 200 A
100
100 A
90
50 A
80
20 A
70
10 A
60
50
IRK.41.. Series
IRK.56.. Series
T J = 125 C
40
30
10
20
30
40
50
60
70
80
90 100
Rate Of Fall Of Forward Current - di/dt (A/s)
Rate Of Fall Of On-state Current - di/dt (A/s)
Fig. 21 - Recovery Charge Characteristics
Transient Thermal Impedance Z thJC (K/W)
1.5
Fig. 20 - On-state Voltage Drop Characteristics

Maximum Reverse Recovery Current - Irr (A)
Maximum Reverse Recovery Charge - Qrr (C)
Fig. 19 - On-state Voltage Drop Characteristics

500
Instantaneous On-state Voltage (V)
Fig. 22 - Recovery Current Characteristics
1
Steady State Value:
R thJC = 0.46 K/W
R thJC = 0.40 K/W
(DC Operation)
IRK.41.. Series
IRK.56.. Series
0.1
Per Junction
0.01
0.001
0.01
0.1
10
Square Wave Pulse Duration (s)
Fig. 23 - Thermal Impedance ZthJC Characteristics
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IRK.41, .56 Series

Rectangular gate pulse
a)Recommended load line for
rated di/dt: 20 V, 30 ohms
tr = 0.5 s, tp >= 6 s
b)Recommended load line for
<= 30% rated di/dt: 20 V, 65 ohms
10
tr = 1 s, tp >= 6 s
(1) PGM = 100 W, tp = 500 s

(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms
(b)
(a)
TJ = -40 C
TJ = 125 C
TJ = 25 C
Instantaneous Gate Voltage (V)
100
(4) (3)
(2) (1)
VGD
IGD
0.1
0.001
0.01
IRK.41../.56.. Series
0.1
Frequency Limited by PG(AV)

10
100
1000
Instantaneous Gate Current (A)
Fig. 24 - Gate Characteristics
Data and specifications subject to change without notice.

This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 10/02
10
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Data Sheet

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Bulletin I27131 rev.

IRK.41, .56 SERIES

THYRISTOR/ DIODE and

The electrical terminals are secured against axial pull-out:

Major Ratings and Characteristics

IRK.41, .56 Series

Max. average on-state

180o conduction, half sine wave,

IO(RMS) Max. continuous RMS

Max. peak, one cycle

forward current (Diodes)

Max. I2t for fusing

Max. I2t for fusing (1)

VT(TO) Max. value of threshold

t=10ms 100% VRRM

t=8.3ms no voltage reapplied

t=10ms 100% VRRM

Max. value of on-state

slope resistance (2)

Max. non-repetitive rate

t=0.1 to 10ms, no voltage reapplied

High level (4)

High level (4)

TJ = 25oC, from 0.67 VDRM,

tr < 0.5 s, tp > 6 s

Max. holding current

Max. latching current

(1) I2t for time tx = I2t x tx

TJ = 25oC, anode supply = 6V,

resistive load, gate open circuit

(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2

(3) 16.7% x x IAV < I < x IAV

(4) I > x IAV

IRK.41, .56 Series

Max. peak gate power

PG(AV) Max. average gate power

Max. peak gate current

-VGM Max. peak negative

Max. gate current

Max. gate voltage

Max. gate voltage

Max. gate current

Max. peak reverse and

off-state leakage current

TJ = 125 oC, gate open circuit

50 Hz, circuit to base, all terminals

RMS isolation voltage

dv/dt Max. critical rate of rise

TJ = 125oC, linear to 0.67 VDRM,

Thermal and Mechanical Specifications

Storage temp. range

RthJC Max. internal thermal

Per module, DC operation

RthCS Typical thermal resistance

Mounting surface flat, smooth and greased

Mounting torque 10%

A mounting compound is recommended

R Conduction (per Junction)

Sine half wave conduction

Rect. wave conduction

IRK.41, .56 Series

Ordering Information Table

Voltage code (See Voltage Ratings table)

* * Available with no auxiliary cathode.