PTZ 3.

6B

PTZ5.1B
Diodes

Zener diode
PTZ5.1B
zApplications

zExternal dimensions (Unit : mm)

Voltage regulation

zLand size figure (Unit : mm)

0.20.01
1.03

1.50.2

4.2

2.0

0.10.02
0.1

4.50.03

5.00.3

2.0
20.05

zFeatures
1) Small power mold type. (PMDS)
2) High ESD tolerance

4.50.03

1.20.3

2.60.2

0.25
0.5

2.60.03

2.00.2

0.5

zConstruction
Silicon epitaxial planar

0.2

1.03

PMDS

0.25

zStructure

ROHM : PMDS
JEDEC : SOD-106

Manufacture Date

zTaping dimensions (Unit : mm)

2.00.05

8.00.1

1.550.1
0

0.30.1

12.00.3

5.50.05

9.50.1

5.30.1

1.750.05

4.00.1

1.550.05
2.90.1

8.00.1
2.40.1

zAbsolute maximum ratings (Ta=25C)

Sym bol

Lim its

Unit

P ower dis s ipation

Param eter

1000

mW

J unction tem perature

Tj

150

S torage tem perature

Ts tg

-55 to +150

Rev.B

1/4

PTZ5.1B
Diodes
zElectrical characteristics (Ta=25C)
Symbol
TYP.

Zener voltage : Vz(V)

MIN.
3.600
3.900

Operating resistance : Zz() Reverse current : IR(A)

Temperature coefficiency : *z(mV/) ESD Break down voltage : ESD(kV)

Iz(mA)
Max.
Iz(mA)
MAX.
VR(V)
Iz(mA)
MIN.
TYP.
PTZ 3.6B
40
15
40
60
40
1.0
-2.8
PTZ 3.9B
40
15
40
40
40
1.0
-2.4
PTZ 4.3B 4.300
40
40
40
4.572
4.800
15
20
1.0
-2.1
PTZ 4.7B 4.700
40
40
40
4.924
5.200
10
20
1.0
-1.7
PTZ 5.1B 5.100
40
40
40
5.368
5.700
8
20
1.5
-0.6
PTZ 5.6B 5.600
40
40
40
5.856
6.300
8
20
2.5
1.4
PTZ 6.2B 6.200
40
40
40
6.509
7.000
6
20
3.0
2.5
PTZ 6.8B 6.800
40
40
40
7.280
7.700
6
20
3.5
3.2
PTZ 7.5B 7.500
40
40
40
7.889
8.400
4
20
4.0
4.2
PTZ 8.2B 8.200
40
40
40
8.655
9.300
4
20
5.0
5.0
PTZ 9.1B 9.100
40
40
40
9.747
10.200
6
20
6.0
5.9
PTZ 10B 10.000
40
40
40
10.310
11.200
6
10
7.0
6.9
30kV
PTZ 11B 11.000
20
20
20
11.510
12.300
8
10
8.0
7.9
PTZ 12B 12.000
20
20
20
12.500
13.500
8
10
9.0
8.7
PTZ 13B 13.300
20
20
20
13.820
15.000
10
10
10.0
10.1
PTZ 15B 14.700
20
20
20
15.350
16.500
10
10
11.0
11.8
PTZ 16B 16.200
20
20
20
16.860
18.300
12
10
12.0
13.3
PTZ 18B 18.000
20
20
20
19.000
20.300
12
10
13.0
15.0
PTZ 20B 20.000
20.820
20
14
20
15.0
17.4
20
22.400
10
PTZ 22B 22.000
23.850
10
14
10
17.0
19.4
10
24.500
10
PTZ 24B 24.000
10
16
10
25.310
27.600
10
10
19.0
21.6
PTZ 27B 27.000
10
16
10
28.700
30.800
10
10
21.0
24.6
PTZ 30B 30.000
10
18
10
31.570
34.000
10
10
23.0
27.5
PTZ 33B 33.000
10
18
10
34.950
37.000
10
10
25.0
30.8
PTZ 36B 36.000
39.240
40.000
10
20
10
10
27.0
37.0
10
1.The Zener voltage(Vz) is measured 40ms after power is supplied.
2.The operating resistances(ZzZzk) are measured by superimposing a minute alternating current on the regulated current(Iz).
TYP.
3.813
4.136

MAX.
4.000
4.400

Test Condition

C=150pF
R=330
forward
and
reverse :
10 times

zMarking (TYPE NO.)

TYP.
PTZ3.6B
PTZ3.9B
PTZ4.3B
PTZ4.7B
PTZ5.1B
PTZ5.6B
PTZ6.2B
PTZ6.8B
PTZ7.5B

TYPENO.

3.6B
3.9B
4.3B
4.7B
5.1B
5.6B
6.2B
6.8B
7.5B

TYP.
PTZ8.2B
PTZ9.1B
PTZ10B
PTZ11B
PTZ12B
PTZ13B
PTZ15B
PTZ16B

TYPENO.

8.2B
9.1B
10B
11B
12B
13B
15B
16B

Rev.B

2/4

PTZ5.1B
Diodes
zElectrical characteristic curves (Ta=25C)
100
5.1

5.6

6.2 6.8 7.5 8.2 9.1 10

11 12 13

15

16

20

18

22

24

30

27

33

36

4.7
4.3
3.9

10

0.1

0.01

0.001
0

10

15

20

25

30

35

40

45

ZENER VOLTAGE:Vz(V)
Vz-Iz CHARACTERISTICS

10000
PRSM

1000
REVERSE SURGE MAXIMUM
POWER:PRSM(W)

POWER DISSIPATION:Pd(W)

1200

1000

800
600
400
200

100

10

0
0

25

50

75

100

125

0.001

150

AMBIENT TEMPERATURE:Ta()
Pd-TaCHARACTERISTICS
40

0.1

35

0.08

30

0.06

25

0.04
20
0.02
15

10

-0.02
-0.04

-0.06

-0.08

-5
10

20
30
TIME:t(ms)
IFSM-t CHARACTERISTICS

40

1000

0.1

10

100

Mounted on epoxy board

IM=10mA

IF=0.5A

Rth(j-a)
TRANSIENT
THAERMAL IMPEDANCE:Rth (/W)

0.12

0.01

TIME:t(ms)
PRSM-TIME CHARACTERISTICS

TEMP.COEFFICIENCE:z(mV/)

TEMP.COEFFICIENCE:z(/)

ZENER CURRENT:Iz(mA)

3.6

100

1ms

time

300us

Rth(j-c)
10

0.1
0.001

0.1
10
TIME:t(s)
Rth-t CHARACTERISTICS

1000

Rev.B

3/4

PTZ5.1B
Diodes
<PTZ5.1B>

Ta=150

1000

Ta=75
1

Ta=125
Ta=150

0.1

Ta=-25
Ta=25

0.01

REVERSE CURRENT:IR(nA)

10

1000

Ta=25

0.1
0.01

Ta=-25

0.001

2
3
4
ZENER VOLTAGEVz(V)
Vz-Iz CHARACTERISTICS

100
0

5.6

0.5
1
REVERSE VOLTAGEVR(V)
VR-IR CHARACTERISTICS

REVERSE CURRENT:IR(nA)

5.3

AVE:5.382V

5.2

5.1

Ta=25
VR=1.5V
n=30pcs

0.8
0.7
0.6
0.5
0.4
0.3

AVE:0.117nA

0.2

1 .5

Ta=25
f=1MHz
VR=0V
n=10pcs

980
970
960
950

AVE:967.4pF

940
930
920
910

900

IR DISPERSION MAP

10000

990

0.1

Vz DISPERSION MAP

0.5

REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS

1000

0.9

5.4

1.5

1
Ta=25
IZ=5mA
n=30pcs

5.5
ZENER VOLTAGE:Vz(V)

Ta=75

0.0001

0.001

Ct DISPERSION MAP

30

ELECTROSTATIC
DDISCHARGE TEST ESD(KV)

DYNAMIC IMPEDANCE:Zz()

f=1MH

CAPACITANCE BETWEEN
TERMINALS:Ct(pF)

ZENER CURRENT:Iz(mA)

100
10

10000

Ta=125
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)

100

1000

100

10

25

No break at 30kV

20
15
10
5

1
0.1

1
ZENER CURRENT:Iz(mA)
Zz-Iz CHARACTERISTICS

10

0
C=200pF
R=0

C=100pF
R=1.5k

C=150pF
R=330

ESD DISPERSION MAP

Rev.B

4/4

Appendix

Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1